AT150578B - Photoelectric cell. - Google Patents
Photoelectric cell.Info
- Publication number
- AT150578B AT150578B AT150578DA AT150578B AT 150578 B AT150578 B AT 150578B AT 150578D A AT150578D A AT 150578DA AT 150578 B AT150578 B AT 150578B
- Authority
- AT
- Austria
- Prior art keywords
- cesium
- compounds
- photoelectric cell
- selenide
- telluride
- Prior art date
Links
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Description
<Desc/Clms Page number 1>
EMI1.1
Die elektronenabgebenden Kathodensehiehten von lichtelektrischen Zellen stellt man im allgemeinen aus Cäsiumoxyd oder Cäsiumsulfid her. Diese Stoffe haben zwar eine gute Elektronenemission, sie sind aber sehr wenig wärmebeständig. Schon die Belichtung der Zelle aus geringer Entfernung mit einer starken Lichtquelle genügt oft, um die Empfindlichkeit der Zelle durch Erwärmen der Schicht herabzusetzen. Man hat sich nun bemüht, durch Verbessern des Herstellungsverfahrens diesen Fehler zu beseitigen. Durchgreifende Erfolge wurden damit jedoch nicht erzielt.
Nach der Erfindung werden die Kathoden lichtelektrischer Zellen nun aus den Verbindungen des Cäsiums mit Selen oder Tellur hergestellt. Diese Verbindungen haben ähnliche lichtelektrische Eigenschaften wie die Verbindungen des Cäsiums mit Sauerstoff und Schwefel, sie sind aber gegen Erwärmen wesentlich unempfindlicher. Statt aus reinem Cäsiumselenid (Cs2Se) oder Cäsiumtellurid (CsTe) können die elektronenabgebenden Schichten auch aus innigen Gemischen oder Mischkristallen dieser Verbindungen untereinander oder mit Cäsiumoxyd (CsO) oder Cäsiumsulfid (Cs2S) bestehen.
Man kann durch die Wahl der Gemische den wirksamen Wellenlängenbereich in weiten Grenzen ändern.
Die neuen Kathoden können in ähnlicher Weise hergestellt werden wie die Oxyd-und Sulfidkathoden. Z. B. bringt man mit Silberselenid oder Silbertellurid überzogene Silberelektroden mit Cäsiumdampf in Berührung, so dass sich an der Oberfläche ein Gemisch von Cäsiumselenid oder Cäsiumtellurid und Silber bildet.
**WARNUNG** Ende DESC Feld kannt Anfang CLMS uberlappen**.
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EMI1.1
The electron-donating cathodes of photoelectric cells are generally made from cesium oxide or cesium sulfide. Although these substances have good electron emission, they are very poorly heat-resistant. Exposing the cell to a strong light source from a short distance is often sufficient to reduce the sensitivity of the cell by heating the layer. Efforts have now been made to eliminate this error by improving the manufacturing process. However, it did not achieve any significant success.
According to the invention, the cathodes of photoelectric cells are now made from the compounds of cesium with selenium or tellurium. These compounds have similar photoelectric properties as the compounds of cesium with oxygen and sulfur, but they are much less sensitive to heating. Instead of pure cesium selenide (Cs2Se) or cesium telluride (CsTe), the electron-donating layers can also consist of intimate mixtures or mixed crystals of these compounds with one another or with cesium oxide (CsO) or cesium sulfide (Cs2S).
The effective wavelength range can be changed within wide limits by the choice of mixtures.
The new cathodes can be manufactured in a similar way to the oxide and sulfide cathodes. For example, silver electrodes coated with silver selenide or silver telluride are brought into contact with cesium vapor so that a mixture of cesium selenide or cesium telluride and silver is formed on the surface.
** WARNING ** End of DESC field may overlap beginning of CLMS **.
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE150578X | 1935-11-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT150578B true AT150578B (en) | 1937-09-10 |
Family
ID=29261015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT150578D AT150578B (en) | 1935-11-04 | 1936-11-02 | Photoelectric cell. |
Country Status (1)
Country | Link |
---|---|
AT (1) | AT150578B (en) |
-
1936
- 1936-11-02 AT AT150578D patent/AT150578B/en active
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