WO2023245511A1

WO2023245511A1 - Process parameter adjustment method and system, and production system and computer device

Info

Publication number: WO2023245511A1
Application number: PCT/CN2022/100530
Authority: WO
Inventors: 荀利凯; 唐毓英; 刘勇兴
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2022-06-22
Filing date: 2022-06-22
Publication date: 2023-12-28

Abstract

The present application relates to a process parameter adjustment method and system, and a production system, a computer device, a storage medium and a computer program product. The process parameter adjustment method comprises: acquiring an adjustment coefficient; acquiring a process parameter for a manufacturing procedure involving forming a target structure on the previous substrate, and measurement data of the target structure that is formed on the previous substrate; and on the basis of the adjustment coefficient, the process parameter for the manufacturing procedure involving forming the target structure on the previous substrate, and the measurement data, automatically adjusting a process parameter for a manufacturing procedure involving forming the target structure on the current substrate.

Description

Process parameter adjustment methods, systems, production systems and computer equipment

Technical field

The present application relates to the field of semiconductor process technology, and in particular to a process parameter adjustment method, system, production system, computer equipment, storage medium and computer program product.

Background technique

With the development of semiconductor technology, all parties have higher and higher requirements for intelligence in the product production process.

In the manufacturing process of semiconductor products, the adjustment of various process parameters relies on engineers to manually organize and analyze the current measurement data, and then modify the relevant parameters of the machine to make the output data closer to the target value. This method of operation requires engineers to sort out a large amount of data, which takes a long time and involves human subjective judgment. Moreover, the workload of modifying parameters is huge. A little negligence will lead to major mistakes.

Contents of the invention

In order to solve the above problems, a process parameter adjustment method, system, production system, computer equipment, storage medium and computer program product are provided.

In order to achieve the above purpose, in the first aspect, this application provides a process parameter adjustment method, including:

Get the adjustment coefficient;

Obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

The process parameters for forming the target structure on the current substrate are automatically adjusted based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data.

In one embodiment, the obtaining the adjustment coefficient includes: obtaining the temperature adjustment coefficient;

The process parameters include process temperature; the measurement data include measurement wavelength and target wavelength;

The automatic adjustment of the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data includes: based on the temperature adjustment coefficient, The process temperature for forming the target structure on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength automatically adjust the process temperature for forming the target structure on the current substrate.

In one embodiment, the target structure formed on the current substrate is determined based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength. The process temperature of the structure is automatically adjusted, including:

Based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength, the first target formula is used to calculate the process of forming the target structure on the current substrate. The temperature is automatically adjusted, where the first target formula is:

T _N =T _N-1 +K _N ×(WLD _N-1 -WLD ₀ )

Among them, T _N is the process temperature for forming the target structure on the current substrate; T _N-1 is the process temperature for forming the target structure on the previous substrate; K _N is the temperature adjustment coefficient; WLD _N-1 is the target formed on the previous substrate The measurement wavelength of the structure; WLD ₀ is the target wavelength; N is an integer greater than 1.

In one embodiment, obtaining the temperature adjustment coefficient includes:

Set the temperature reference coefficient, and form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate. plus the value of the temperature reference coefficient;

Taking the process temperature of the target structure formed on each substrate as the abscissa and the measurement wavelength of the target structure formed on each substrate as the ordinate, a process temperature-measurement wavelength coordinate system is established;

Based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate, a fitting curve of the process temperature-measurement wavelength and a fitting curve of the process temperature-measurement wavelength are obtained by fitting. Slope, the slope of the fitting curve of the process temperature-measurement wavelength is determined as the temperature adjustment coefficient.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes: the process temperature for forming the epitaxial structure on the substrate.

In one embodiment, obtaining the adjustment coefficient further includes: obtaining the flow adjustment coefficient;

The process parameters also include process reaction gas flow; the measurement data includes measured warpage and target warpage;

The automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data includes: based on the flow adjustment coefficient, The process reaction gas flow rate for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage automatically adjust the process reaction gas flow rate for forming the target structure on the current substrate.

In one embodiment, the method is based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage. Automatically adjust the process reaction gas flow to form the target structure on the current substrate, including:

Based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage, the second target formula is used to calculate the current substrate The process reaction gas flow rate to form the target structure is automatically adjusted, wherein the second target formula is:

Flow _N =Flow _N-1 +α _N ×(Dev _N-1 -Dev ₀ )

Among them, Flow _N is the process reaction gas flow rate to form the target structure on the current substrate; Flow _N-1 is the process reaction gas flow rate to form the target structure on the previous substrate; α _N is the flow adjustment coefficient; Dev _N-1 is the previous substrate The warpage of the target structure formed on; Dev ₀ is the target warpage; N is an integer greater than 1.

In one embodiment, obtaining the flow adjustment coefficient includes:

Set the flow reference coefficient to form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N. Among them, the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate. The reaction gas flow rate plus the value of the flow reference coefficient;

Taking the process reaction gas flow rate of the target structure formed on each substrate as the abscissa and the measured warpage of the target structure formed on each substrate as the ordinate, establish a process reaction gas flow-measured warpage coordinate system;

Based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate, a fitting curve of the process reaction gas flow rate-measured warpage degree and the process reaction gas are obtained by fitting. The slope of the fitting curve between the flow rate and the measured warpage is determined as the flow adjustment coefficient.

In one embodiment, the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.

In the second aspect, this application also provides a process parameter adjustment system, including:

a first acquisition device, used to acquire the adjustment coefficient;

a second acquisition device, used to acquire the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

A processing device, connected to the first acquisition device and the second acquisition device, configured to generate a pair based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data. The automatic adjustment signal is used to automatically adjust the process parameters of the target structure formed on the current substrate.

In one embodiment, the adjustment coefficient includes a temperature adjustment coefficient; the process parameters for forming the target structure on each substrate include process temperature; the measurement data includes a measurement wavelength and a target wavelength; the first acquisition device It includes a temperature adjustment coefficient acquisition module, which is used to obtain the temperature adjustment coefficient; the processing device includes a first processing module, the first processing module, the second acquisition device and the temperature The adjustment coefficient acquisition module is connected and used to generate an adjustment coefficient for the target structure on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength. An automatic adjustment signal is formed to automatically adjust the process temperature of the target structure.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate.

In one embodiment, the adjustment coefficient also includes obtaining a flow adjustment coefficient, and the process parameters for forming the target structure on each substrate also include process reaction gas flow; the measurement data includes measured warpage and target warpage. curvature; the first acquisition device also includes a flow adjustment coefficient acquisition module, the flow adjustment coefficient acquisition module is used to obtain the flow adjustment coefficient; the processing device includes a second processing module, the second processing module and The second acquisition device is connected to the flow adjustment coefficient acquisition module, and is used for measuring the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, and the target structure formed on the previous substrate. The warpage degree and the target warpage degree generate an automatic adjustment signal for automatically adjusting the process reaction gas flow rate to form the target structure on the current substrate.

In a third aspect, this application also provides a production system, including:

Process equipment, used to form target structures on each substrate and obtain process parameters for forming the target structures on each substrate;

Measuring equipment, connected to the process equipment, is used to measure the target structure formed on each substrate and obtain measurement data of the target structure formed on each substrate;

The process parameter adjustment system as described in any of the above embodiments is connected to the process equipment and the measurement equipment.

In a fourth aspect, the present application also provides a computer device, including a memory and a processor. The memory stores a computer program. When the processor executes the computer program, it implements the process parameter adjustment described in any of the above embodiments. Method steps.

In a fifth aspect, the present application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the process parameter adjustment method described in any of the above embodiments of the claims are implemented. .

In a sixth aspect, the present application also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the process parameter adjustment method described in any of the above embodiments.

The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects and advantages of the application will become apparent from the description, drawings and claims.

Description of the drawings

In order to more clearly explain the technical solutions in the embodiments of the present application or the traditional technology, the drawings needed to be used in the description of the embodiments or the traditional technology will be briefly introduced below. Obviously, the drawings in the following description are only for the purpose of explaining the embodiments or the technical solutions of the traditional technology. For some embodiments of the application, those of ordinary skill in the art can also obtain other drawings based on these drawings without exerting creative efforts.

To better describe and illustrate the embodiments and/or examples of those disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the drawings should not be construed as limiting the scope of any of the disclosed inventions, the embodiments and/or examples presently described, and the best modes currently understood of these inventions.

Figure 1 is a flow chart of a process parameter adjustment method provided in an embodiment;

Figure 2 is a flow chart for obtaining a temperature adjustment coefficient in a process parameter adjustment method provided in an embodiment;

Figure 3 is a fitting curve of process temperature-measurement wavelength obtained in step S203 of the process parameter adjustment method provided in an embodiment; where K _N is the temperature adjustment coefficient;

Figure 4 is a fitting curve of measured warpage-luminescence wavelength standard deviation obtained in the process parameter adjustment method provided in an embodiment; wherein Dev ₀ is the target warpage;

Figure 5 is a top structural schematic diagram of the target structure in the process parameter adjustment method provided in an embodiment;

Figure 6 is a flow chart for obtaining the flow adjustment coefficient in the process parameter adjustment method provided in an embodiment;

Figure 7 is a fitting curve of process reaction gas flow-measured warpage obtained in step S603 of the process parameter adjustment method provided in an embodiment; wherein, α _N is the flow adjustment coefficient;

Figure 8 is a schematic structural diagram of a process parameter adjustment system provided in an embodiment;

Figure 9 is a schematic structural diagram of a process parameter adjustment system provided in another embodiment;

Figure 10 is a schematic structural diagram of a process parameter adjustment system provided in another embodiment;

Figure 11 is a schematic structural diagram of a production system provided in an embodiment;

Figure 12 is an internal structure diagram of a computer device in one embodiment.

Explanation of reference symbols:

1. First acquisition device; 11. Temperature adjustment coefficient acquisition module; 12. Flow adjustment coefficient acquisition module; 2. Second acquisition device; 3. Processing device; 31. First processing module; 32. Second processing module; 100 , process equipment; 200, measurement equipment; 300, process parameter adjustment system.

Detailed ways

In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the present application are shown in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing specific embodiments only and is not intended to limit the application.

It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. layer.

Spatial relational terms such as "under", "under", "under", "under", "on", "above", etc., in This may be used to describe the relationship of one element or feature to other elements or features shown in the figures. It will be understood that the spatially relative terms encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "under" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below" and "under" may include both upper and lower orientations. Additionally, the device may be otherwise oriented (eg, rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

As used herein, the singular forms "a," "an," and "the" may include the plural forms as well, unless the context clearly dictates otherwise. It will also be understood that when the terms "consist" and/or "comprise" are used in this specification, the presence of stated features, integers, steps, operations, elements and/or parts may be identified but not to the exclusion of one or more other The presence or addition of features, integers, steps, operations, elements, parts and/or groups. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.

According to various embodiments of the present application, a process parameter adjustment method, system, production system, computer equipment, storage medium and computer program product are provided.

In order to achieve the above purpose, in the first aspect, the present application provides a process parameter adjustment method. As shown in Figure 1, the process parameter adjustment method may include the following steps:

S101: Get the adjustment coefficient;

S102: Obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

S103: Automatically adjust the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data.

In the above example, the process parameter adjustment method uses the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate, based on the adjustment coefficient and the process technology of the target structure formed on the previous substrate. Parameters and measurement data automatically adjust the process parameters for forming the target structure on the current substrate, so that the process parameters for forming the target structure on the current substrate can be adjusted in real time, which can avoid product abnormalities caused by not updating parameters for a long time. problem, in addition, the current process parameters for forming the target structure substrate are automatically adjusted, eliminating the need for manpower to regularly go to the production workshop to modify parameters, effectively avoiding the occurrence of human subjective judgment and human errors, and can help to obtain more accurate process parameters to improve product yield and corporate competitiveness.

In one embodiment, obtaining the adjustment coefficient includes: obtaining a temperature adjustment coefficient; process parameters include process temperature; measurement data includes measurement wavelength and target wavelength; based on the adjustment coefficient, process parameters of forming the target structure on the previous substrate and The measurement data automatically adjusts the process parameters of the target structure formed on the current substrate, including: based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength and target wavelength of the target structure formed on the previous substrate. Automatically adjust the process temperature for forming the target structure on the current substrate.

Specifically, the process temperature used to form the target structure on the previous substrate refers to the process temperature used to form the target structure on the previous substrate, and the process temperature data can be obtained in real time during the process. The measurement wavelength refers to the luminescence wavelength of the target structure obtained by performing a photoluminescence test on the target structure after forming the target structure on the substrate. The target wavelength refers to the ideal luminescence wavelength of the desired target structure under photoluminescence testing, and may be the luminescence wavelength of the central region of the ideal target structure.

In one embodiment, the process temperature for forming the target structure on the current substrate is automatically adjusted based on the temperature adjustment coefficient, the process temperature for forming the target structure on the previous substrate, the measurement wavelength and the target wavelength of the target structure formed on the previous substrate. ,include:

Based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength and target wavelength of the target structure formed on the previous substrate, the first target formula is used to automatically adjust the process temperature of the target structure formed on the current substrate. , where the first objective formula is:

T _N =T _N-1 +K _N ×(WLD _N-1 -WLD ₀ )

In one embodiment, N may be, but is not limited to, an integer greater than 5.

In one embodiment, obtaining the temperature adjustment coefficient may include the following steps:

S201: Set the temperature reference coefficient, and form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N; among them, the process temperature for forming the target structure on each substrate is the same as that for forming the target structure on the previous substrate. The process temperature plus the value of the temperature reference coefficient;

S202: Taking the process temperature of the target structure formed on each substrate as the abscissa and the measurement wavelength of the target structure formed on each substrate as the ordinate, establish a process temperature-measurement wavelength coordinate system;

S203: Based on the process temperature of the target structure formed on each substrate and the measurement wavelength of the target structure formed on each substrate, fit to obtain the fitting curve of the process temperature-measurement wavelength and the fitting curve of the process temperature-measurement wavelength. Slope, determine the slope of the fitting curve of process temperature-measurement wavelength as the temperature adjustment coefficient.

In one embodiment, step S203 can refer to Figure 3. Based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate, the fitting curve of the process temperature-measurement wavelength is obtained by fitting and The slope of the fitting curve between process temperature and measurement wavelength; the slope of the fitting curve between process temperature and measurement wavelength is the value of the temperature adjustment coefficient, that is, the dotted line K _N in Figure 3 corresponds to the temperature adjustment coefficient obtained by fitting. curve.

Specifically, the temperature reference coefficient is a known temperature adjustment experience value.

In one embodiment, the target structure may include an epitaxial structure, and the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate. The measurement wavelength of the target structure formed on the previous substrate includes the luminescence wavelength of the epitaxial structure obtained by performing a photoluminescence test on the epitaxial structure after forming the epitaxial structure on the substrate.

Specifically, the epitaxial structure may include a quantum well layer, and the process temperature used to form the epitaxial structure may be the process temperature used when forming the quantum well layer.

In one embodiment, obtaining the adjustment coefficient also includes: obtaining the flow adjustment coefficient; the process parameters also include the process reaction gas flow; the measurement data includes the measured warpage and the target warpage; based on the adjustment coefficient, Process parameters and measurement data for forming the target structure. Automatic adjustment of the process parameters for forming the target structure on the current substrate includes: based on the flow adjustment coefficient, the process reaction gas flow rate for forming the target structure on the previous substrate, the flow rate of the process reaction gas formed on the previous substrate. The measured warpage and target warpage of the target structure are used to automatically adjust the process reaction gas flow rate to form the target structure on the current substrate.

Specifically, the process reaction gas may include but is not limited to nitrogen, gas gallium or gas indium.

In one embodiment, the formation of the target structure on the current substrate is based on the flow adjustment coefficient, the flow rate of the process reaction gas for forming the target structure on the previous substrate, the measured warpage and the target warpage of the target structure formed on the previous substrate. The process reaction gas flow is automatically adjusted, including:

Based on the flow adjustment coefficient, the process reaction gas flow rate for forming the target structure on the previous substrate, the measured warpage and target warpage of the target structure formed on the previous substrate, the second target formula is used to form the target structure on the current substrate. The process reaction gas flow rate is automatically adjusted, where the second target formula is:

Flow _N =Flow _N-1 +α _N ×(Dev _N-1 -Dev ₀ )

In one embodiment, N may be, but is not limited to, an integer greater than 5.

Specifically, the process reaction gas flow rate used to form the target structure on the previous substrate refers to the process reaction gas flow rate used to form the target structure on the previous substrate. The process reaction gas flow rate data can be obtained in real time during the process. The measured warpage refers to the measured warpage of the target structure obtained by conducting a warpage test on the target structure after forming the target structure on the substrate. The target warpage refers to fitting the measured warpage of the target structure formed on each substrate and the standard deviation of the luminescence wavelength of the target structure to obtain a fitting curve of the measured warpage - the standard deviation of the luminescence wavelength, as shown in the figure As shown in 4, the fitting curve of measured warpage-luminescence wavelength standard deviation is generally a parabola, and the vertex of the parabola is the target warp degree Dev ₀ .

In one embodiment, to perform a warpage test on the target structure to obtain the measured warpage of the target structure, it is necessary to conduct light testing on the central area of the target structure and the areas located on the periphery of the central area and arranged sequentially along the periphery of the central area. The average luminescence wavelength of each area obtained by the electroluminescence test can then be combined with Figure 5 and used to calculate the measured warpage of the target structure using the third target formula, where the third target formula is:

Dev _N-1 =a×8/(b+c+d+e+f+g+h+i)

Among them, referring to the top view structural diagram of the target structure shown in Figure 5, a in the third target formula is the average luminescence wavelength of the central area A of the target structure, b to i are respectively located at the periphery of the central area and along the periphery of the central area in order The average emission wavelength of each region from the B region to the I region of the arrangement.

In one embodiment, obtaining the flow adjustment coefficient may include the following steps:

S601: Set the flow reference coefficient, and form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N; among them, the process reaction gas flow rate for forming the target structure on each substrate is the target structure formed on the previous substrate. The reaction gas flow rate of the structure plus the value of the flow reference coefficient;

S602: Taking the process reaction gas flow rate of the target structure formed on each substrate as the abscissa and the measured warpage of the target structure formed on each substrate as the ordinate, establish a process reaction gas flow-measurement warpage coordinate system;

S603: Based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate, the fitting curve of the process reaction gas flow rate-measured warpage degree and the process reaction gas are obtained by fitting. The slope of the fitting curve between the flow rate and the measured warpage is determined as the flow adjustment coefficient.

In one example, step S603 can refer to FIG. 7 . Based on the process reaction gas flow rate for forming the target structure on each substrate and the measured warpage of the target structure formed on each substrate, the process reaction gas flow rate - the measured warpage rate is obtained by fitting. The fitting curve of the curvature and the slope of the fitting curve of the process reaction gas flow-measured warpage; the slope of the fitting curve of the process reaction gas flow-measured warpage is the value of the flow adjustment coefficient, as shown in Figure The dotted line α _N in 7 is the curve corresponding to the flow adjustment coefficient obtained by fitting.

In one embodiment, the target structure may include an epitaxial structure, and the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate. The measured warpage of the target structure formed on the previous substrate includes the warpage of the epitaxial structure obtained by testing the epitaxial structure after the epitaxial structure is formed on the substrate.

Specifically, the epitaxial structure may include a buffer layer, and the process reaction gas flow rate used to form the epitaxial structure may be the process reaction gas flow rate used when forming the buffer layer.

It should be understood that although the steps in the flowcharts involved in the above embodiments are shown in sequence as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated in this article, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least some of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

In the second aspect, this application also provides a process parameter adjustment system. As shown in Figure 8, the process parameter adjustment system includes:

The first acquisition device 1 is used to acquire the adjustment coefficient;

The second acquisition device 2 is used to acquire the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

The processing device 3 is connected to the first acquisition device 1 and the second acquisition device 2, and is used to generate a target structure formed on the current substrate based on the adjustment coefficient, process parameters and measurement data of the target structure formed on the previous substrate. Automatic adjustment signal for automatic adjustment of process parameters.

In the above example, the process parameter adjustment system acquires the adjustment coefficient through the first acquisition device 1, and acquires the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate through the second acquisition device 2. , by processing the automatic adjustment signal of the processing device 3 that automatically adjusts the process parameters of the target structure on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data, the current substrate can be adjusted in real time. Adjusting the process parameters for forming the target structure on the current substrate can avoid problems such as product abnormalities caused by not updating parameters for a long time; in addition, the processing device 3 automatically adjusts the process parameters for forming the target structure on the current substrate, eliminating manual timing. Going to the production workshop to modify parameters effectively avoids subjective judgment and human errors, helps obtain more accurate process parameters, and improves product yield and corporate competitiveness.

In one embodiment, as shown in Figure 9, the adjustment coefficient includes a temperature adjustment coefficient; the process parameters for forming the target structure on each substrate include the process temperature; the measurement data includes the measurement wavelength and the target wavelength; the first acquisition device 1 It includes a temperature adjustment coefficient acquisition module 11, which is used to acquire the temperature adjustment coefficient; the processing device 3 includes a first processing module 31, and the first processing module 31 is connected to the second acquisition device 2 and the temperature adjustment coefficient acquisition module 11. Connection, used to generate automatic adjustment of the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength and the target wavelength of the target structure formed on the previous substrate automatic adjustment signal.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate. The measurement wavelength of the target structure formed on the previous substrate includes the luminescence wavelength of the epitaxial structure obtained by performing a photoluminescence test on the epitaxial structure after forming the epitaxial structure on the substrate.

In one embodiment, as shown in Figure 10, the adjustment coefficient also includes obtaining the flow adjustment coefficient, and the process parameters for forming the target structure on each substrate also include the process reaction gas flow rate; the measurement data includes the measured warpage and target warpage; the first acquisition device 1 also includes a flow adjustment coefficient acquisition module 12, which is used to acquire the flow adjustment coefficient; the processing device 3 includes a second processing module 32, the second processing module 32 and the second acquisition module The device 2 is connected to the flow adjustment coefficient acquisition module 12 for measuring the warpage and the target warpage based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, and the target structure formed on the previous substrate. degree, and generates an automatic adjustment signal that automatically adjusts the process reaction gas flow rate to form the target structure on the current substrate.

In one embodiment, the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate. The measured warpage of the target structure formed on the previous substrate includes the warpage of the epitaxial structure obtained by testing the epitaxial structure after the epitaxial structure is formed on the substrate.

Specifically, the epitaxial structure may include a buffer layer, and the process reaction gas flow rate used to form the epitaxial structure may be the process reaction gas flow rate used when forming the buffer layer. The process reaction gas may include but is not limited to nitrogen, gas gallium or gas indium.

In the third aspect, this application also provides a production system, as shown in Figure 11. The production system includes:

Process equipment 100 is used to form target structures on each substrate and obtain process parameters for forming the target structures on each substrate;

The measurement equipment 200 is connected to the process equipment and is used to measure the target structure formed on each substrate and obtain the measurement data of the target structure formed on each substrate;

The process parameter adjustment system 300 of any of the above embodiments is connected to the process equipment and the measurement equipment.

In the above example, the production system includes the above-mentioned process parameter adjustment system 300. The adjustment coefficient is obtained through the first acquisition device 1, and the process parameters for forming the target structure on the previous substrate and the process parameters for forming the target structure on the previous substrate are acquired through the second acquisition device 2. The measurement data of the target structure is used to automatically adjust the process parameters of the target structure on the current substrate through the processing device 3 based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data. , the process parameters of the target structure formed on the current substrate can be adjusted in real time, which can avoid problems such as product abnormalities caused by not updating parameters for a long time; in addition, the processing device 3 performs the process parameters of the target structure formed on the current substrate. Automatic adjustment eliminates the need for manpower to regularly go to the production workshop to modify parameters, effectively avoiding the occurrence of subjective judgments and human errors. It can help obtain more accurate process parameters, improve product yields and corporate competitiveness.

In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. 12 . The computer device includes a processor, memory, communication interface, display screen and input device connected through a system bus. Wherein, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes non-volatile storage media and internal memory. The non-volatile storage medium stores operating systems and computer programs. This internal memory provides an environment for the execution of operating systems and computer programs in non-volatile storage media. The communication interface of the computer device is used for wired or wireless communication with external terminals. The wireless mode can be implemented through WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies. The computer program implements a process parameter adjustment method when executed by the processor. The display screen of the computer device may be a liquid crystal display or an electronic ink display. The input device of the computer device may be a touch layer covered on the display screen, or may be a button, trackball or touch pad provided on the computer device shell. , it can also be an external keyboard, trackpad or mouse, etc.

Those skilled in the art can understand that the structure shown in Figure 12 is only a block diagram of a partial structure related to the solution of the present application, and does not constitute a limitation on the computer equipment to which the solution of the present application is applied. Specific computer equipment can May include more or fewer parts than shown, or combine certain parts, or have a different arrangement of parts.

This application also provides a computer device, including a memory and a processor. The memory stores a computer program. When the processor executes the computer program, it implements the steps of the process parameter adjustment method of any of the above embodiments.

In one embodiment, the processor also implements the following steps when executing the computer program:

Obtain the adjustment coefficient; obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate; based on the adjustment coefficient, the process parameters and measurement data of the target structure formed on the previous substrate Automatically adjust the process parameters for forming the target structure on the current substrate.

Set the temperature reference coefficient, and form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate. Add the value of the temperature reference coefficient; use the process temperature of the target structure formed on each substrate as the abscissa, and use the measurement wavelength of the target structure formed on each substrate as the ordinate to establish a process temperature-measurement wavelength coordinate system; based on each The process temperature of the target structure formed on the substrate and the measurement wavelength of the target structure formed on each substrate are fitted to obtain the fitting curve of the process temperature-measurement wavelength and the slope of the fitting curve of the process temperature-measurement wavelength. The slope of the temperature-measurement wavelength fitting curve is determined as the temperature adjustment coefficient.

Set the flow reference coefficient to form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N. Among them, the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate. Add the value of the flow reference coefficient to the reaction gas flow rate; take the process reaction gas flow rate of the target structure formed on each substrate as the abscissa, and use the measured warpage of the target structure formed on each substrate as the ordinate to establish the process reaction gas flow rate -Measurement warpage coordinate system; based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage degree of the target structure formed on each substrate, the process reaction gas flow rate-measurement warpage degree is obtained by fitting The fitting curve and the slope of the fitting curve between the process reaction gas flow rate and the measured warpage are determined as the flow adjustment coefficient.

The present application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the process parameter adjustment method of any of the above embodiments of the claims are implemented.

In one embodiment, the computer program, when executed by the processor, also implements the following steps:

This application also provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the steps of the process parameter adjustment method of any of the above embodiments are implemented.

Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. , when executed, the computer program may include the processes of the above method embodiments. Any reference to memory, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetic variable memory (Magnetoresistive Random Access Memory (MRAM), ferroelectric memory (Ferroelectric Random Access Memory, FRAM), phase change memory (Phase Change Memory, PCM), graphene memory, etc. Volatile memory may include random access memory (Random Access Memory, RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in many forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM). The databases involved in the various embodiments provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include blockchain-based distributed databases, etc., but are not limited thereto. The processors involved in the various embodiments provided in this application may be general-purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to this.

The technical features of the above embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, all possible combinations should be used. It is considered to be within the scope of this manual.

The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

A method for adjusting process parameters, including:

Get the adjustment coefficient;

Obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

The process parameters for forming the target structure on the current substrate are automatically adjusted based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data.
The process parameter adjustment method according to claim 1, wherein said obtaining the adjustment coefficient includes: obtaining a temperature adjustment coefficient;

The process parameters include process temperature; the measurement data include measurement wavelength and target wavelength;

The automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data includes: based on the temperature adjustment coefficient, The process temperature for forming the target structure on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength automatically adjust the process temperature for forming the target structure on the current substrate.
The process parameter adjustment method according to claim 2, wherein the method is based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate and the target The wavelength automatically adjusts the process temperature to form the target structure on the current substrate, including:

Based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength, the first target formula is used to calculate the process of forming the target structure on the current substrate. The temperature is automatically adjusted, where the first target formula is:

T N =T N-1 +K N ×(WLD N-1 -WLD 0 )

Among them, T N is the process temperature for forming the target structure on the current substrate; T N-1 is the process temperature for forming the target structure on the previous substrate; K N is the temperature adjustment coefficient; WLD N-1 is the target formed on the previous substrate The measurement wavelength of the structure; WLD 0 is the target wavelength; N is an integer greater than 1.
The process parameter adjustment method according to claim 3, wherein said obtaining the temperature adjustment coefficient includes:

Set the temperature reference coefficient, and form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate. plus the value of the temperature reference coefficient;

Taking the process temperature of the target structure formed on each substrate as the abscissa and the measurement wavelength of the target structure formed on each substrate as the ordinate, a process temperature-measurement wavelength coordinate system is established;

Based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate, a fitting curve of the process temperature-measurement wavelength and a fitting curve of the process temperature-measurement wavelength are obtained by fitting. Slope, the slope of the fitting curve of the process temperature-measurement wavelength is determined as the temperature adjustment coefficient.
The process parameter adjustment method according to claim 2, wherein the process temperature for forming the target structure on the previous substrate includes:

The process temperature for forming epitaxial structures on the substrate.
The process parameter adjustment method according to any one of claims 1 to 5, wherein said obtaining the adjustment coefficient further includes: obtaining the flow adjustment coefficient;

The process parameters also include process reaction gas flow; the measurement data includes measured warpage and target warpage;

The automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data includes: based on the flow adjustment coefficient, The process reaction gas flow rate for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage automatically adjust the process reaction gas flow rate for forming the target structure on the current substrate.
The method of adjusting process parameters according to claim 6, wherein the flow adjustment coefficient is based on the process reaction gas flow rate of the target structure formed on the previous substrate, and the measured warpage of the target structure formed on the previous substrate. and the target warpage automatically adjusts the process reaction gas flow rate to form the target structure on the current substrate, including:

Based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage, the second target formula is used to calculate the current substrate The process reaction gas flow rate to form the target structure is automatically adjusted, wherein the second target formula is:

Flow N =Flow N-1 +α N ×(Dev N-1 -Dev 0 )

Among them, Flow N is the process reaction gas flow rate to form the target structure on the current substrate; Flow N-1 is the process reaction gas flow rate to form the target structure on the previous substrate; α N is the flow adjustment coefficient; Dev N-1 is the previous substrate The measured warpage of the target structure formed on; Dev 0 is the target warpage; N is an integer greater than 1.
The process parameter adjustment method according to claim 7, wherein said obtaining the flow adjustment coefficient includes:

Set the flow reference coefficient to form target structures on M substrates respectively. M is a positive integer greater than 1 and less than N. Among them, the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate. The reaction gas flow rate plus the value of the flow reference coefficient;

Taking the process reaction gas flow rate of the target structure formed on each substrate as the abscissa and the measured warpage of the target structure formed on each substrate as the ordinate, a process reaction gas flow-measured warpage coordinate system is established;

Based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate, a fitting curve of the process reaction gas flow rate-measured warpage degree and the process reaction gas are obtained by fitting. The slope of the fitting curve between the flow rate and the measured warpage is determined as the flow adjustment coefficient.
The process parameter adjustment method according to claim 6, wherein the process reaction gas flow rate for forming the target structure on the previous substrate includes:

The process reaction gas flow rate for forming an epitaxial structure on a substrate.
A process parameter adjustment system, including:

a first acquisition device, used to acquire the adjustment coefficient;

a second acquisition device, used to acquire the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

A processing device, connected to the first acquisition device and the second acquisition device, for generating a pair of parameters based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data. The automatic adjustment signal is used to automatically adjust the process parameters of the target structure formed on the current substrate.
The process parameter adjustment system according to claim 10, wherein the adjustment coefficient includes a temperature adjustment coefficient; the process parameters for forming the target structure on each substrate include process temperature; the measurement data includes a measurement wavelength and a target wavelength. ; The first acquisition device includes a temperature adjustment coefficient acquisition module, and the temperature adjustment coefficient acquisition module is used to acquire the temperature adjustment coefficient; the processing device includes a first processing module, and the first processing module and the third Two acquisition devices are connected to the temperature adjustment coefficient acquisition module, and are configured to use the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target. wavelength, and generates an automatic adjustment signal that automatically adjusts the process temperature to form the target structure on the current substrate.
The process parameter adjustment system according to claim 11, wherein the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate.
The process parameter adjustment system according to any one of claims 10 to 12, wherein the adjustment coefficient also includes obtaining a flow adjustment coefficient, and the process parameters for forming the target structure on each substrate also include the process reaction gas flow rate; The measurement data includes measured warpage and target warpage; the first acquisition device also includes a flow adjustment coefficient acquisition module, and the flow adjustment coefficient acquisition module is used to obtain the flow adjustment coefficient; the processing device It includes a second processing module, the second processing module is connected to the second acquisition device and the flow adjustment coefficient acquisition module, and is used to form the process reaction gas of the target structure on the previous substrate based on the flow adjustment coefficient. The flow rate, the measured warpage of the target structure formed on the previous substrate, and the target warpage are used to generate an automatic adjustment signal for automatically adjusting the flow rate of the process reaction gas to form the target structure on the current substrate.
The process parameter adjustment system according to claim 13, wherein the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.
A production system that includes:

Process equipment, used to form target structures on each substrate and obtain process parameters for forming the target structures on each substrate;

Measuring equipment, connected to the process equipment, is used to measure the target structure formed on each substrate and obtain measurement data of the target structure formed on each substrate;

The process parameter adjustment system according to any one of claims 10 to 14 is connected to the process equipment and the measurement equipment.
A computer device includes a memory and a processor. The memory stores a computer program. When the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.
A computer-readable storage medium having a computer program stored thereon, which implements the steps of the method according to any one of claims 1 to 9 when executed by a processor.
A computer program product comprising a computer program which, when executed by a processor, implements the steps of the method according to any one of claims 1 to 9.