WO2023175849A1

WO2023175849A1 - Substrate treatment device, substrate support, semiconductor device production method, substrate treatment method, and program

Info

Publication number: WO2023175849A1
Application number: PCT/JP2022/012358
Authority: WO
Inventors: 優作岡嶋; 雄二竹林; 裕也宮西
Original assignee: 株式会社Kokusai Electric
Priority date: 2022-03-17
Filing date: 2022-03-17
Publication date: 2023-09-21
Also published as: TW202339087A

Abstract

The present invention comprises: a substrate support that comprises a first support part having a plurality of first columns for supporting a plurality of substrates so as to be spaced apart in the vertical direction, and a second support part having a plurality of second columns for supporting a plurality of plates that are positioned between the plurality of substrates supported by the first support and have a through hole in the center section thereof; a treatment chamber that accommodates the substrate support; and a gas supply unit that supplies gas to the treatment chamber.

Description

Substrate processing equipment, substrate support, semiconductor device manufacturing method, substrate processing method and program

The present disclosure relates to a substrate processing apparatus, a substrate support, a semiconductor device manufacturing method, a substrate processing method, and a program.

As a substrate processing apparatus used in the manufacturing process of semiconductor devices, there is, for example, a so-called vertical apparatus in which a load lock chamber (lower chamber) is installed below a process tube (reaction tube). Such a substrate processing apparatus moves a boat (substrate support) supporting a substrate up and down between a process tube and a load lock chamber, and performs predetermined processing on the substrate while the boat is housed in the process tube. (For example, see Patent Document 1).

Japanese Patent Application Publication No. 2002-368062

An object of the present disclosure is to provide a technique that can improve the efficiency of substrate processing.

According to one aspect of the present disclosure,
A first support part having a plurality of first pillars that supports a plurality of substrates at intervals in the vertical direction, and a through hole disposed in a central part between the plurality of substrates supported by the first support part. a second support part having a plurality of second supports supporting a plurality of plates having a substrate support;
a processing chamber that accommodates the substrate support;
a gas supply unit that supplies gas to the processing chamber;
A technique is provided that includes the following.

According to the present disclosure, it is possible to improve the efficiency of substrate processing.

FIG. 2 is a schematic configuration diagram of a substrate processing apparatus suitably used in one embodiment of the present disclosure, and is a longitudinal cross-sectional view of a processing furnace portion showing a state in which a substrate support carrying a wafer is carried into a processing chamber. FIG. 2 is a schematic configuration diagram of a substrate processing apparatus suitably used in one aspect of the present disclosure, and is a longitudinal cross-sectional view of a processing furnace portion showing a state in which a substrate support carrying a wafer is carried into a transfer chamber. FIG. 3 is a plan view of a partition plate in a substrate support of a substrate processing apparatus that is preferably used in one embodiment of the present disclosure. 4 is a plan view showing the relationship between the partition plate and the wafer shown in FIG. 3. FIG. FIG. 2 is a perspective view showing a main part configuration of a substrate support in a substrate processing apparatus suitably used in one embodiment of the present disclosure. 6 is a plan view showing the relationship between the substrate holding part and the partition plate in the substrate support shown in FIG. 5. FIG. 6 is a cross-sectional view showing a state in which a wafer is placed on the substrate support part of the substrate support shown in FIG. 5. FIG. FIG. 6 is a cross-sectional view showing a state in which a wafer is placed on the partition plate support portion of the substrate support shown in FIG. 5; FIG. 2 is a schematic configuration diagram of a controller included in a substrate processing apparatus suitably used in one aspect of the present disclosure, and is a block diagram showing a control system of the controller. FIG. 3 is a flowchart showing the procedure of a film forming process performed in a substrate processing apparatus preferably used in one embodiment of the present disclosure.

<One aspect of the present disclosure>
One aspect of the present disclosure will be described below with reference to FIGS. 1 to 10. Note that the drawings used in the following explanation are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the reality. Moreover, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match between a plurality of drawings.

(1) Configuration of Substrate Processing Apparatus The substrate processing apparatus according to this embodiment is used in the manufacturing process of semiconductor devices, and is a vertical type that processes a plurality of substrates (for example, five) at a time. It is configured as a substrate processing apparatus. Examples of substrates to be processed include semiconductor wafer substrates (hereinafter simply referred to as "wafers") on which semiconductor integrated circuit devices (semiconductor devices) are fabricated.

As shown in FIG. 1, the substrate processing apparatus according to this embodiment includes a vertical processing furnace 1. The vertical processing furnace 1 includes a heater 10 as a heating section (heating mechanism, heating system). The heater 10 has a cylindrical shape, and is installed perpendicularly to the installation floor of the substrate processing apparatus by being supported by a heater base (not shown) serving as a holding plate. The heater 10 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat.

A reaction tube 20 constituting a reaction container (processing container) is arranged inside the heater 10 and concentrically with the heater 10 . The reaction tube 20 has a double tube configuration including an inner tube 21 and an outer tube 22 concentrically surrounding the inner tube 21. Inner tube 21 and outer tube 22 are each made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC). The inner tube 21 is formed into a cylindrical shape with open upper and lower ends. The outer tube 22 has a cylindrical shape with a closed upper end and an open lower end. The upper end of the inner tube 21 extends to the vicinity of the ceiling of the outer tube 22.

A processing chamber 23 in which processing is performed on the wafer 200 is formed in the hollow part of the inner tube 21 . The processing chamber 23 is configured to be able to accommodate the wafers 200 arranged in the processing chamber 23 from one end (lower side) to the other end (upper side). The area in the processing chamber 23 where a plurality of wafers 200 are arranged is also referred to as a substrate arrangement area (wafer arrangement area). Further, the direction in which the wafers 200 are arranged in the processing chamber 23 is also referred to as the substrate arrangement direction (wafer arrangement direction).

A lower chamber (load lock chamber) 30 is provided below the outer tube 22 (reaction tube 20). The lower chamber 30 is made of a metal material such as stainless steel (SUS), has an inner diameter that is approximately the same as the inner diameter of the inner tube 21, and has a cylindrical shape with an open top end and a closed bottom end (open bottomed cylindrical shape). It is formed. The lower chamber 30 is arranged to communicate with the inner tube 21. A flange 31 is provided at the upper end of the lower chamber 30. The flange 31 is made of a metal material such as SUS. The upper end of the flange 31 is engaged with the lower end of the inner tube 21 and the outer tube 22, respectively, and is configured to support the inner tube 21 and the outer tube 22, that is, the reaction tube 20. The inner tube 21 and the outer tube 22 are installed vertically like the heater 10. A transfer chamber (load lock chamber) 33 that functions as a transfer space for transferring the wafer 200 is formed in the cylindrical hollow portion (closed space) of the lower chamber 30 .

A nozzle 24 serving as a gas supply section is provided in the processing chamber 23 so as to penetrate through the inner tube 21 and the outer tube 22. The nozzle 24 is made of a heat-resistant material such as quartz or SiC, and is configured as an L-shaped long nozzle. A gas supply pipe 51 is connected to the nozzle 24 . Two

gas supply pipes

52 and 54 are connected to the gas supply pipe 51, and are configured to be able to supply a plurality of types of gas, here two types, into the processing chamber 23. The

gas supply pipes

51, 52, and 54 and the

gas supply pipes

53, 55, and 56 described later are each made of a metal material such as SUS.

The gas supply pipe 52 is provided with a mass flow controller (MFC) 52a that is a flow rate controller (flow rate control unit) and a valve 52b that is an on-off valve in order from the upstream side of the gas flow. A gas supply pipe 53 is connected to the gas supply pipe 52 downstream of the valve 52b. The gas supply pipe 53 is provided with an MFC 53a and a valve 53b in this order from the upstream side of the gas flow.

The gas supply pipe 54 is provided with an MFC 54a and a valve 54b in this order from the upstream side of the gas flow. A gas supply pipe 55 is connected to the gas supply pipe 54 downstream of the valve 54b. The gas supply pipe 55 is provided with an MFC 55a and a valve 55b in this order from the upstream side of the gas flow.

A gas supply pipe 56 is connected to the lower side wall of the lower chamber 30. The gas supply pipe 56 is provided with an MFC 56a and a valve 56b in this order from the upstream side of the gas flow.

The nozzle 24 connected to the tip of the gas supply pipe 51 extends from the lower region to the upper region of the processing chamber 23 along the inner wall of the inner pipe 21 into the space between the inner wall of the inner pipe 21 and the wafer 200. The wafers 200 are arranged so that the wafers 200 are arranged in the same direction (rising upward in the direction in which the wafers 200 are arranged). That is, the nozzle 24 is provided along the wafer arrangement region in a region horizontally surrounding the wafer arrangement region on the side of the wafer arrangement region where the wafers 200 are arranged. A gas supply hole 24a for supplying gas is provided on the side surface of the nozzle 24. The gas supply hole 24a opens toward the center of the reaction tube 20, and can supply gas toward the wafer 200. A plurality of gas supply holes 24a are provided from the bottom to the top of the reaction tube 20 (nozzle 24) at a position facing a wafer 200 supported by a substrate support to be described later.

From the gas supply pipe 52, a raw material gas (raw material) that is a first processing gas (first film forming gas) is supplied into the processing chamber 23 via the MFC 52a, the valve 52b, the gas supply pipe 51, and the nozzle 24. It is now possible to do so. The raw material gas refers to a raw material in a gaseous state, such as a gas obtained by vaporizing a raw material that is in a liquid state at room temperature and normal pressure, and a raw material that is in a gaseous state at room temperature and normal pressure.

From the gas supply pipe 54, a reaction gas (reactant), which is a second processing gas (second film forming gas), is introduced into the processing chamber 23 via the MFC 54a, the valve 54b, the gas supply pipe 51, and the nozzle 24. It is possible to supply.

Inert gas can be supplied from the

gas supply pipes

53 and 55 into the processing chamber 23 via the

MFCs

53a and 55a, the

valves

53b and 55b, the

gas supply pipes

51, 52 and 54, and the nozzle 24, respectively. It has become. The inert gas acts as a purge gas, diluent gas, or carrier gas.

From the gas supply pipe 56, it is possible to supply inert gas into the lower chamber 30 via the MFC 56a and the valve 56b. The inert gas acts as a purge gas.

A first processing gas supply system (first processing gas supply section) is mainly composed of the gas supply pipe 52, MFC 52a, and valve 52b. The gas supply pipe 51 and the nozzle 24 may be included in the first processing gas supply system. A second processing gas supply system (second processing gas supply section) is mainly composed of the gas supply pipe 54, MFC 54a, and valve 54b. The gas supply pipe 51 and the nozzle 24 may be included in the second processing gas supply system. A first inert gas supply system (first inert gas supply section) is mainly constituted by the

gas supply pipes

53, 55,

MFCs

53a, 55a, and

valves

53b, 55b. The

gas supply pipes

51, 52, 54 and nozzle 24 may be included in the first inert gas supply system. A second inert gas supply system (second inert gas supply section) is mainly composed of the gas supply pipe 56, MFC 56a, and valve 56b.

A pumping section 26 serving as an exhaust buffer, which is a gas retention space, is formed at the lower end of the outer tube 22 so as to surround the outer tube 22. The pumping part 26 is arranged below the heater 10 provided so as to surround the outer tube 22. The pumping section 26 communicates with the exhaust passage 25, which is an annular space between the inner tube 21 and the outer tube 22, and is configured to temporarily retain the gas flowing through the exhaust passage 25. ing.

An opening 27 is provided below the inner tube 21 to discharge gas from the inside of the inner tube 21 and the transfer chamber 33 to the pumping section 26 . A plurality of openings 27 are provided along the circumferential direction of the inner tube 21 at positions facing the pumping part 26 and as close to the lower chamber 30 as possible.

An exhaust pipe 61 is connected to the pumping section 26 to exhaust gas remaining in the pumping section 26. The exhaust pipe 61 is connected to a pressure sensor 62 as a pressure detector (pressure detection unit) that detects the pressure inside the processing chamber 23 and an APC (Auto Pressure Controller) valve 63 as a pressure regulator (pressure adjustment unit). , a vacuum pump 64 as a vacuum evacuation device is connected. The APC valve 63 can perform evacuation and stop of evacuation in the processing chamber 23 by opening and closing the valve while the vacuum pump 64 is in operation. Furthermore, with the vacuum pump 64 in operation, By adjusting the valve opening based on pressure information detected by the pressure sensor 62, the pressure inside the processing chamber 23 can be adjusted. The exhaust pipe 61, the APC valve 63, and the pressure sensor 62 mainly constitute an exhaust system, that is, an exhaust line. The exhaust flow path 25, the pumping section 26, and the vacuum pump 64 may be included in the exhaust system.

A substrate loading/unloading port 32 is provided above the side wall of the lower chamber 30. The wafer 200 is moved in and out of the transfer chamber 33 via the substrate loading/unloading port 32 by a transfer robot (not shown). In the transfer chamber 33, the wafer 200 is loaded onto a substrate support, which will be described later, and the wafer 200 is unloaded from the substrate support.

The substrate support is configured to support a plurality of wafers 200 (for example, 5 wafers) in a horizontal position and with their centers aligned with each other in a vertically aligned manner in multiple stages, that is, at intervals. It is configured to be arranged. The substrate support includes at least a substrate support part (first support part) 41 that supports the wafer 200 and a partition plate support part (second support part) 46 that supports a partition plate (plate) 46d. The substrate support is made of a heat-resistant material such as quartz or SiC. At the bottom of the substrate support, a heat insulating section 42 is provided in which heat insulating plates made of a heat-resistant material such as quartz or SiC are supported in multiple stages in a horizontal position. The heat insulating plate may be covered with a cover made of a heat resistant material such as quartz or SiC. The heat insulating portion 42 may be configured by a heat insulating tube made of a heat resistant material such as quartz or SiC.

As shown in FIG. 2, the board support part 41 has a plurality of pillars (first pillars) 41c supported by a base 41a, and board holding members (support parts) attached to the plurality of pillars 41c at equal pitches. 41d supports a plurality of wafers 200 at predetermined intervals in the vertical direction. The substrate support portion 41 is configured by a base portion 41a, a support column 41c, and a substrate holding member 41d having an integrated structure or separate structures.

As shown in FIG. 2, the partition plate support section 46 has a plurality of partition plates 46d fixed at a predetermined pitch to a column (second column) 46c supported between a base 46a and a top plate 46b. . The partition plate support portion 46 is configured by a base 46a, a top plate 46b, a support column 46c, and a partition plate 46d, which may be integrally or separately constructed.

The plurality of wafers 200 supported by substrate holding members 41d attached to pillars 41c are separated by partition plates 46d fixed (supported) at predetermined intervals in the vertical direction to pillars 46c supported by partition plate supports 46. It's partitioned off. Here, the partition plate 46d is placed either above or below the wafer 200, or both.

The predetermined interval between the plurality of wafers 200 placed on the substrate support part 41 is the same as the vertical interval of the partition plate 46d fixed to the partition plate support part 46. The intervals between the partition plates 46 installed in multiple stages are set according to the surface area of the wafer 200. For example, when the surface area of the wafer 200 after processing is 50 to 200 times (for example, 100 times) that of the unprocessed wafer 200, the interval between each partition plate 46d is 10 to 60 mm (for example, about 20 mm). is set to By doing so, it becomes possible to supply the gas to the center of the wafer, contributing to the uniformity of the film.

As shown in FIG. 3, the partition plate (ring plate) 46d has a ring shape with a through hole (hole) 46e in the center. The diameter of the through hole 46e (inner diameter of the partition plate 46d) is set to about 1/6 to 3/4 of the diameter of the wafer 200. This allows processing without affecting the gas flow. The diameter (outer diameter) of the partition plate 46d is larger than the diameter of the wafer 200, as shown in FIG. The diameter of the partition plate 46d is set to 1.03 to 1.30 times the diameter of the wafer 200. For example, when the diameter of the wafer is 300 mm, the diameter of the partition plate 46d is 310 to 400 mm.

In this embodiment, in order to have a structure in which the distance between the partition plate 46d of the partition plate support part 46 and the wafer 200 (substrate holding member 41d of the substrate support part 41) is variable, the partition plate support part 46 and the substrate support part 41 The partition plate support section 46 and the substrate support section 41 are configured to be independent from each other, and one or both of the partition plate support section 46 and the substrate support section 41 can be driven in the vertical direction (variable configuration). As a result, the wafer 200 placed on the substrate holding member 41d is placed on the partition plate 46d, or the wafer 200 placed on the partition plate 46d is placed on the substrate holding member 41d. It is possible to do this. Furthermore, since the wafer 200 can be moved to an arbitrary height, the film formation distribution can be adjusted.

In the partition plate support part 46 and the board support part 41 that move relative to each other in the vertical direction, interference between the partition plate 46d of the partition plate support part 46, the pillar 41c of the board support part 41, and the board holding member 41d is prevented. Must.

In order to avoid interference with the support columns 41c and the substrate holding members 41d of the substrate support section 41, as shown in FIG. Shape cutout portions 46f are formed at a plurality of locations. That is, in addition to the notch 46f formed in the partition plate 46d shown in FIG. It further includes a notch as a second recess configured to avoid this (that is, to accommodate the substrate holding member 41d).

As shown in FIG. 5, a notch 46f is formed in each of the top plate 46b and the partition plate 46d that constitute the partition plate support portion 46. Thereby, even when the board support part 41 is configured as an integral structure, it is possible to install the partition plate support part 46 from above and below with respect to the board support part 41.

As shown in FIG. 6, a gap is formed between the partition plate 46d and the support column 41c. The dimensions of each part of the notch 46f formed in the partition plate 46d are 2 to 4 mm larger than the dimensions when the support 41c and the substrate holding member 41d are projected from directly above. If it is narrower than 2 mm, there is a possibility that the partition plate 46d will come into contact with the support column 41c or the substrate holding member 41d. On the other hand, if it is larger than 4 mm, the amount of gas flowing upward or downward from the gap between the partition plate 46d and the support 41c or the substrate holding member 41d will increase, and the gas flow will be disturbed. There is a risk that the control of gas flow on the surface of the wafer 200 being held may be disrupted.

By setting the relationship between the dimensions of each part of the notch 46f and the dimensions of the support 41c as described above, the cross section of the gas flow path between the partition plate 46d and the support 41c can be reduced. Thereby, the inflow and outflow of gas in the space above and below the partition plate 46d can be suppressed, and the flow of gas on the surface of the wafer 200 held by the partition plate 46d can be controlled with high precision.

At least two height positions of the wafer 200 can be set. The first is the height at which the wafer 200 is transported, as shown in FIG. The second factor is the height during processing, as shown in FIG. The height during transportation is the height at which the substrate is placed on the substrate holding member 41d. The height during the process is the height at which it is directly placed (placed) on the partition plate 46d.

As shown in FIGS. 2 and 7, when the wafer 200 is loaded onto the substrate support and unloaded from the substrate support through the substrate loading/unloading port 32 (when the wafer 200 is transported) , the plurality of partition plates 46d are arranged below the substrate holding member 41d of the substrate supporting unit 41 (substrate holding member 41d and the substrate holding member 41d).

As shown in FIGS. 1 and 8, after loading the wafer 200, the substrate holding member 41d moves below the partition plate 46d and supports the wafer 200 by making the partition plate 46d support the outer periphery of the wafer 200. It is supposed to be done. As shown in FIGS. 1 and 8, when the wafers 200 are processed, space is isolated for each wafer 200 by being placed on the partition plate 46d. Although the partition plate 46d has a ring shape, spatial separation is possible by contacting (directly mounting) the wafer 200 on the partition plate 46d to close the through hole 46e.

For example, the processing temperature is 400 to 800° C., and since the partition plate 46d continues processing, the temperature is high. When loading the wafer 200, the temperature of the wafer 200 is lower than the temperature of the partition plate 46d. Therefore, in order to prevent the wafer 200 from warping due to sudden changes in heat, after the temperature of the wafer 200 reaches -100 to 0°C, which is the processing temperature, the height position of the wafer 200 is changed and the wafer 200 is placed directly on the partition plate 46d. The timing for carrying out the operation of placing the substrate or directly placing it on the partition plate 46d is after the substrate support is placed at a position where the process can be started.

When placing the wafer 200 on the partition plate 46d, in order to prevent adhesion between the partition plate 46d and the wafer 200 due to film formation, for example, at least one protrusion of 0.1 to 3 mm, specifically three, is provided on the partition plate 46d. The distance between the back surface of the wafer 200 and the partition plate 46d may be 0.1 to 3 mm by providing support at three points.

The heat insulating part 42 installed at the lower part of the partition plate support part 46 has a cutout part 46f provided in the partition plate 46d and a cutout part 46f in order to prevent interference with a part (pillar 41c) of the board support part 41 that moves up and down. A similar recess is provided.

If the base portion 41a and the support column 41c of the board support portion 41 are configured separately, the partition plate 46d may not have the notch portion 46f. For example, if the thickness of the partition plate 46d is increased, it is also possible to use a counterbore instead of providing a notch.

The substrate support is supported by rods 43. The rod 43 penetrates the bottom of the lower chamber 30 while maintaining the airtight state of the transfer chamber 33, and is further connected to a lifting/rotating mechanism (boat elevator) 44 below and outside the lower chamber 30. There is. The elevating/rotating mechanism 44 is configured to vertically move the wafer 200 supported by the substrate support between the processing chamber 23 and the transfer chamber 33 by elevating the substrate support. That is, the elevating/rotating mechanism 44 is configured as a transport device (transport mechanism) that transports the substrate support, that is, the wafer 200, between the processing chamber 23 and the transfer chamber 33. For example, when the lifting/rotating mechanism 44 performs an upward movement, the substrate support rises to the position in the processing chamber 23 (wafer processing position) shown in FIG. , the substrate support is lowered to a position within the transfer chamber 33 (wafer transfer position) shown in FIG. Further, the lifting/rotating mechanism 44 is configured to rotate the wafer 200 by rotating the substrate support. The elevating/rotating mechanism 44 includes a mechanism for driving the substrate support section 41 in the vertical direction with respect to the partition plate support section 46 .

Note that a lid 47 that closes the lower part of the reaction tube 20 may be provided near the upper end of the rod 43 and below the heat insulating section 42. By providing the lid 47 to close the lower part of the reaction tube 20, it becomes possible to suppress the source gas and reaction gas present in the reaction tube 20 from diffusing into the transfer chamber 33. Further, the pressure inside the reaction tube 20 can be easily controlled, and the uniformity of processing on the wafers 200 can be improved.

A temperature sensor 11 as a temperature detector is installed inside the inner tube 21. By adjusting the power supply to the heater 10 based on the temperature information detected by the temperature sensor 11, the temperature in the processing chamber 23 becomes a desired temperature distribution. The temperature sensor 11 is L-shaped like the nozzle 24, and is provided along the inner wall of the inner tube 21.

As shown in FIG. 9, a controller 70, which is a control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 71, a RAM (Random Access Memory) 72, a storage device 73, and an I/O port 74. has been done. The RAM 72, storage device 73, and I/O port 74 are configured to be able to exchange data with the CPU 71 via an internal bus 75. The controller 70 is connected to an input/output device 82 configured as, for example, a touch panel, and an external storage device 81.

The storage device 73 is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 73, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures, conditions, etc. of a semiconductor device manufacturing method, which will be described later, are described are readably stored. The process recipe is a combination of processes (each step) in a method for manufacturing a semiconductor device, which will be described later, to be executed by the controller 70 to obtain a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, etc. will be collectively referred to as simply programs. Further, a process recipe is also simply referred to as a recipe. When the word program is used in this specification, it may include only a single recipe, only a single control program, or both. The RAM 72 is configured as a memory area (work area) in which programs, data, etc. read by the CPU 71 are temporarily held.

The I/O port 74 is connected to the above-mentioned MFCs 52a to 56a, valves 52b to 56b, pressure sensor 62, APC valve 63, vacuum pump 64, heater 10, temperature sensor 11, lifting/rotating mechanism 44, and the like.

The CPU 71 is configured to read and execute a control program from the storage device 73 and read recipes from the storage device 73 in response to input of operation commands from the input/output device 82 and the like. The CPU 71 adjusts the flow rate of various gases by the MFCs 52a to 56a, opens and closes the valves 52b to 56b, opens and closes the APC valve 63, and adjusts the pressure by the APC valve 63 based on the pressure sensor 62 in accordance with the contents of the read recipe. It is configured to control the operation, starting and stopping of the vacuum pump 64, temperature adjustment operation of the heater 10 based on the temperature sensor 11, lifting/lowering operation of the substrate support by the lifting/rotating mechanism 44, rotation and rotation speed adjusting operation, etc. There is.

The controller 70 can be configured by installing the above-mentioned program stored in the external storage device 81 into a computer. The external storage device 81 includes, for example, a magnetic tape, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, and a semiconductor memory such as a USB memory. The storage device 73 and the external storage device 81 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as simply recording media. When the term "recording medium" is used in this specification, it may include only the storage device 73, only the external storage device 81, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 81.

(2) Substrate Processing Step An example of a substrate processing sequence, that is, a film formation sequence, in which a thin film is formed on the wafer 200 as a substrate using the above-described substrate processing apparatus will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller 70.

Here, a film forming process in which a film is formed on the wafer 200 by alternately supplying a source gas and a reaction gas will be described with reference to FIG. In the film forming process (film forming sequence) shown in FIG.
supplying source gas to the wafer 200;
supplying a reactive gas to the wafer 200;
A step of forming a film on the wafer 200 is performed by performing a cycle of non-simultaneously a predetermined number of times.

When the word "wafer" is used in this specification, it may mean the wafer itself, or it may mean a stack of a wafer and a predetermined layer or film formed on its surface. In this specification, when the term "wafer surface" is used, it may mean the surface of the wafer itself, or the surface of a predetermined layer formed on the wafer. In this specification, when the expression "forming a predetermined layer on a wafer" refers to forming a predetermined layer directly on the surface of the wafer itself, or a layer formed on the wafer, etc. Sometimes it means forming a predetermined layer on top of. In this specification, when the word "substrate" is used, it has the same meaning as when the word "wafer" is used.

(Wafer charge: S110)
A plurality of (for example, five) wafers 200 are loaded (wafer charging) into the substrate support part 41 of the substrate support. Specifically, in the transfer chamber 33, with the mounting position of the wafer 200 on the substrate support 41 facing the substrate loading/unloading port 32, the substrate supporting portion 41 is moved to a predetermined position through the substrate loading/unloading port 32. The wafer 200 is placed on. Once one wafer 200 is loaded onto the substrate support 41, another wafer 200 is loaded onto another wafer placement position on the substrate support 41 while moving the vertical position of the substrate support using the lifting/rotating mechanism 44. do. Repeat this action multiple times. Specifically, the wafer 200 is loaded while lowering the substrate support. Note that when a plurality of wafers 200 are loaded on the substrate support, partition plates 46d are arranged in multiple stages along the wafers 200 at positions between adjacent wafers 200 and at positions below the wafer 200 placed at the bottom. The partition plate support portion 46 is arranged in advance so as to be in the arranged state. At this time, the wafer 200 loaded on the substrate support section 41 is heated by the partition plate support section 46 .

(Boat load: S120)
After the wafers 200 are loaded onto the substrate support, as shown in FIG. It is brought into the country (boatload). At this time, the height positions of the partition plate supports 46 are adjusted so that the height positions of the gas supply holes 24a are respectively located at slightly higher positions than the surface of the wafer 200. This makes it possible to reliably supply gas to the surface of each wafer 200.

(Pressure adjustment and temperature adjustment: S130)
The inside of the processing chamber 23 is evacuated (decompressed) by the vacuum pump 64 so that the inside of the processing chamber 23, that is, the space in which the wafer 200 exists, reaches a desired pressure (degree of vacuum). At this time, the pressure inside the processing chamber 23 is measured by the pressure sensor 62, and the APC valve 63 is feedback-controlled (pressure adjustment) based on the measured pressure information. Further, the wafer 200 in the processing chamber 23 is heated by the heater 10 to a desired processing temperature. At this time, the energization of the heater 10 is feedback-controlled based on the temperature information detected by the temperature sensor 11 so that the inside of the processing chamber 23 has a desired temperature distribution (temperature adjustment). Further, the substrate support section 41 is lowered and the wafer 200 is placed on the partition plate 46d. Further, rotation of the wafer 200 by the lifting/rotating mechanism 44 is started. The operation of the vacuum pump 64 and the heating and rotation of the wafer 200 are all continued at least until the processing on the wafer 200 is completed.

(Film forming process: S140)
After that, the next two steps, that is, a raw material gas supply step (S141) and a reaction gas supply step (S143) are sequentially performed.

[Raw material gas supply step: S141]
In this step, source gas is supplied to the wafer 200 in the processing chamber 23.

Specifically, the valve 52b is opened and the raw material gas is allowed to flow into the gas supply pipe 52. The flow rate of the source gas is adjusted by the MFC 52a, and the raw material gas is supplied into the processing chamber 23 via the gas supply pipe 51 and the nozzle 24. The raw material gas supplied into the processing chamber 23 rises within the processing chamber 23, flows out from the upper end opening of the inner pipe 21 into the exhaust flow path 25, flows down the exhaust flow path 25, passes through the pumping section 26, and flows into the exhaust pipe. It is exhausted from 61. At this time, source gas is supplied to the wafer 200. At this time, the

valves

53b and 55b are opened to flow inert gas into the processing chamber 23 through the

gas supply pipes

51, 53, 55 and the nozzle 24. The supply of inert gas may be omitted. By exhausting gas from inside the processing chamber 23 via the pumping section 26, the exhaust operation can be stabilized.

The processing conditions in this step are:
Raw material gas supply flow rate: 0.01 to 2 slm, preferably 0.1 to 1 slm
Inert gas supply flow rate (for each gas supply pipe): 0 to 10slm
Each gas supply time: 0.1 to 120 seconds, preferably 0.1 to 60 seconds Processing temperature: 250 to 900°C, preferably 400 to 700°C
Processing pressure: 1 to 2666 Pa, preferably 67 to 1333 Pa
is exemplified.

Note that the notation of a numerical range such as "1 to 2666 Pa" in this specification means that the lower limit value and the upper limit value are included in the range. Therefore, for example, "1 to 2666 Pa" means "1 Pa or more and 2666 Pa or less". The same applies to other numerical ranges.

By supplying a source gas containing, for example, Si and Cl to the wafer 200 under the above-mentioned conditions, a layer of, for example, less than one atomic layer to several atomic layers is formed as a first layer on the outermost surface of the wafer 200. A thick Cl-containing Si-containing layer is formed. The Si-containing layer containing Cl is formed by chemical adsorption or physical adsorption of the source gas on the surface of the wafer 200, chemical adsorption of a substance (SixCly) that is partially decomposed of the source gas, deposition of Si due to thermal decomposition of the source gas, etc. formed by. The Si-containing layer containing Cl may be an adsorption layer (physical adsorption layer or chemical adsorption layer) of source gas or SixCly, or may be a deposited layer of Si containing Cl. In this specification, the Si-containing layer containing Cl is also simply referred to as the Si-containing layer.

At this time, an inert gas (purge gas) is supplied into the transfer chamber 33 (purging the transfer chamber 33). Specifically, the valve 56b is opened to allow inert gas to flow into the gas supply pipe 56. The flow rate of the inert gas is adjusted by the MFC 56a, and the inert gas is supplied into the transfer chamber 33. The N ₂ gas supplied to the transfer chamber 33 rises within the transfer chamber 33 and is discharged to the pumping section 26 through the opening 27 . The N ₂ gas discharged to the pumping section 26 is exhausted from the exhaust pipe 61 together with the raw material gas etc. discharged from the inside of the processing chamber 23 to the pumping section 26 . By exhausting gas from the transfer chamber 33 via the pumping section 26, the exhaust operation can be stabilized.

When the inert gas is supplied into the transfer chamber 33, the gas pressure in the transfer chamber 33 becomes higher than the gas pressure in the processing chamber 23 (gas pressure in the processing chamber 23<gas pressure in the transfer chamber 33). pressure), and the flow rate of gas supplied into the transfer chamber 33 becomes larger than the total flow rate of gas supplied into the processing chamber 23 (total flow rate of gas supplied into the processing chamber 23<transfer chamber 33).

After the first layer is formed on the surface of the wafer 200, the valve 52b is closed and the supply of source gas into the processing chamber 23 is stopped. Gas and the like remaining in the processing chamber 23 are then removed from the processing chamber 23 (purge). At this time, the

valves

53b and 55b are opened to supply inert gas into the processing chamber 23 through the gas supply pipe 51 and the nozzle 24. The inert gas acts as a purge gas, thereby purging the inside of the processing chamber 23.

The first gas (raw material gas) includes monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCDS) gas, and dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas. , trichlorosilane (SiHCl ₃ , abbreviation: TCS) gas, tetrachlorosilane (SiCl ₄ , abbreviation: STC) gas, octachlorotrisilane (Si ₃ Cl ₈ , abbreviation: OCTS) gas, and other chlorosilane-based gases can be used. .

As the inert gas, rare gases such as Ar gas, He gas, N ₂ gas, Ne gas, and Xe gas can be used. This point also applies to each step described below.

[Reaction gas supply step: S143]
In this step, a reactive gas is supplied to the wafer 200 in the processing chamber 23, that is, the first layer formed on the wafer 200.

Specifically, the valve 54b is opened to allow the reaction gas to flow into the gas supply pipe 54. The flow rate of the reaction gas is adjusted by the MFC 54a, and the reaction gas is supplied into the processing chamber 23 through the gas supply pipe 51 and the nozzle 24. The reaction gas supplied into the processing chamber 23 rises within the processing chamber 23, flows out from the upper end opening of the inner pipe 21 into the exhaust flow path 25, flows down the exhaust flow path 25, passes through the pumping section 26, and flows into the exhaust pipe. It is exhausted from 61. At this time, a reactive gas is supplied to the wafer 200. At this time, the

valves

53b and 55b are closed to prevent the inert gas from being supplied into the processing chamber 23 together with the reaction gas. That is, the second gas is supplied into the processing chamber 23 and exhausted from the exhaust pipe 61 without being diluted with an inert gas. In this way, by supplying the reaction gas into the processing chamber 23 without diluting it with an inert gas, the thin film deposition rate can be improved.

Also, at this time, inert gas is supplied into the transfer chamber 33 using the same process procedure as that for purging the transfer chamber 33 in the raw material gas supply step (S141) described above.

The processing conditions in this step are:
Reaction gas supply flow rate: 0.1-10slm
Processing pressure: 1 to 4000 Pa, preferably 1 to 3000 Pa
is exemplified. Other processing conditions are the same as those in the raw material gas supply step (S141).

By supplying, for example, an oxygen-containing gas as a reactive gas to the wafer 200 under the above conditions, at least a portion of the first layer formed on the wafer 200 is oxidized (modified). By modifying the first layer, a layer containing Si and O, that is, a SiO layer is formed as a second layer on the wafer 200. When forming the second layer, impurities such as Cl contained in the first layer constitute a gaseous substance containing at least Cl in the process of the reforming reaction of the first layer with the reaction gas, and Expelled from within. As a result, the second layer becomes a layer containing less impurities such as Cl than the first layer.

After the second layer is formed, the valve 54b is closed and the supply of the reaction gas into the processing chamber 23 is stopped. Then, the gas remaining in the processing chamber 23 is removed from the processing chamber 23 by the same processing procedure as the purge in the above-described raw material gas supply step (S141).

Reactive gases include nitrous oxide (N ₂ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO ₂ ) gas, oxygen (O ₂ ) gas, ozone (O ₃ ) gas, and water vapor (H ₂ O). An O-containing gas such as carbon monoxide (CO) gas, carbon dioxide (CO ₂ ) gas, etc. can be used.

(Confirmation of number of times performed: S150)
By performing a cycle in which the above-described raw material gas supply step (S141) and reaction gas supply step (S143) are performed non-simultaneously, that is, alternately without synchronization, a predetermined number of times (n times, n is an integer of 1 or more), For example, a SiO film can be formed on the surface of the wafer 200. Preferably, the above-described cycle is repeated multiple times. That is, the thickness of the SiO layer formed per cycle is made thinner than the desired film thickness, and the film thickness of the film formed by stacking the SiO layers is set to the desired film thickness (for example, 0.1 to 2 nm). ) It is preferable to repeat the above-mentioned cycle multiple times (for example, about 10 to 80 times, more preferably about 10 to 15 times). Each time the above-mentioned cycle ends, it is determined whether this cycle has been performed a preset number of times (predetermined number of times).

(Afterpurge: S160)
After it is confirmed that the above-described cycle has been repeated a predetermined number of times, purge gas is supplied into the processing chamber 23 from each of the

gas supply pipes

53 and 55, and is exhausted from the exhaust pipe 61 via the pumping section 26. As a result, the inside of the processing chamber 23 is purged, and gases and byproducts remaining in the processing chamber 23 are removed from the inside of the processing chamber 23.

(Atmospheric pressure return: S170)
Thereafter, the atmosphere within the processing chamber 23 is replaced with an inert gas (inert gas replacement), and the pressure within the processing chamber 23 is returned to normal pressure.

(Boat unload: S180)
Thereafter, in the reverse procedure of the boat loading step (S120) described above, the substrate support section 41 is raised and the wafer 200 is placed on the substrate holding member 41d. As shown in FIG. 2, the substrate support is lowered by the lifting/rotating mechanism 44, and the processed wafer 200 is transferred from the processing chamber 23 to the transfer chamber 33 of the lower chamber 30 while being supported by the substrate support 41. It will be carried out (boat unloaded).

(Wafer discharge: S190)
Thereafter, in the reverse procedure of the wafer charging step (S110) described above, the processed wafer 200 is unloaded (taken out) from the substrate support part 41 and carried out to the outside of the lower chamber 30 through the substrate loading/unloading port 32. do. Note that the processed wafer 200 is taken out from the lower part of the substrate support section 41. In other words, boat unloading (S180) and wafer discharge (S190) are partially performed in parallel.

In this way, the film forming process of forming the SiO layer on each of the plurality of wafers 200 is completed.

(3) Effects of this embodiment According to the above embodiment, one or more of the following effects can be obtained.

(a) In this embodiment, the partition plate 46d is configured in a ring shape with a through hole 46e provided in the center. As a result, the volume can be reduced compared to a disk-shaped partition plate, and the heat capacity becomes smaller, so it is possible to increase the rate of temperature rise and fall.

(b) In this embodiment, the distance between the partition plate 46d and the wafer 200 is variable. That is, the partition plate support part 46 that supports the ring-shaped partition plate 46d and the substrate support part 41 that supports the wafer 200 are each configured independently, and one or both of the substrate support part 41 and the partition plate support part 46 can be moved up and down. let This makes it possible to place the wafer 200 directly on the partition plate 46d, making it possible to separate the film-forming processing space for each wafer 200.

(c) In this aspect, by forming the partition plate 46d into a ring shape, it is possible to reduce the weight, and it is also possible to easily remove the substrate support during maintenance or the like.

<Other aspects of the present disclosure>
Although aspects of the present disclosure have been specifically described above, the present disclosure is not limited to the above-mentioned aspects, and various changes can be made without departing from the gist thereof.

In the above embodiment, an example is shown in which the reaction tube has an inner tube and an outer tube, but the present disclosure is not limited thereto, and the reaction tube may have a configuration without an inner tube and only an outer tube. Good too.

Furthermore, in the above embodiment, an example is shown in which the lower chamber is disposed below the reaction tube, but the present disclosure is not limited thereto. For example, the reaction tube may be configured horizontally, and a chamber (lower chamber) may be disposed next to the reaction tube. Furthermore, even in the case of a vertical apparatus, a chamber (lower chamber) may be provided at the upper part of the reaction tube. In other words, the chamber forming the substrate transfer chamber is not limited to the above-mentioned lower chamber as long as it is arranged so as to be continuous with the reaction tube.

Furthermore, in the above embodiment, an example in which a SiO film is formed as a thin film has been described, but the present disclosure is not limited to such a form.

For example, as a reactant, in addition to O-containing gas such as O ₂ gas, nitrogen (N)-containing gas such as ammonia (NH ₃ ) gas, triethylamine ((C ₂ H ₅ ) ₃ N, abbreviation: TEA) gas, etc. A gas containing N and carbon (C), a gas containing C such as propylene (C ₃ H ₆ ) gas, a gas containing boron (B) such as trichloroborane (BCl ₃ ) gas, etc. may be used. Then, by the gas supply sequence shown below, silicon oxide film (SiO film), silicon nitride film (SiN film), silicon oxynitride film (SiON) film, silicon carbonitride film (SiCN film), silicon A film such as an oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon boronitride film (SiBN film), a silicon borocarbonitride film (SiBCN film), or the like may be formed. In these cases as well, the same effects as in the above embodiments can be obtained. The processing procedure and processing conditions when supplying these reactive gases can be, for example, the same as those when supplying the reactive gases in the above-described embodiment. In these cases as well, the same effects as in the above embodiments can be obtained.

(HCDS→O ₂ )×n ⇒ SiO
(HCDS→ _NH3 )×n ⇒ SiN
(HCDS → O ₂ → NH ₃ )×n ⇒ SiON
(HCDS→TEA)×n ⇒ SiCN
(HCDS→TEA→O ₂ )×n ⇒ SiOC(N)
(HCDS→ _C3H6 → _NH3 → _O2 )×n _⇒ SiOCN
(HCDS→ _C3H6 → _O2 → _NH3 )×n _⇒ SiOCN
(HCDS→ _BCl3 → _NH3 )×n ⇒ SiBN
(HCDS→ _C3H6 → _BCl3 → _NH3 )×n _⇒ SiBCN
(DCS→O ₂ )×n ⇒ SiO
(DCS → O ₂ → NH ₃ )×n ⇒ SiON

Alternatively, for example, the raw material and the reactant may be simultaneously supplied to the substrate to form the various films described above on the substrate. Alternatively, for example, a single raw material may be supplied to the substrate, and a silicon film (Si film) may be formed on the substrate. In these cases as well, effects similar to those of the above embodiments can be obtained. The processing procedures and processing conditions when supplying these raw materials and reactants can be the same as those when supplying the raw materials and reactants in the above embodiment. In these cases as well, the same effects as in the above embodiments can be obtained.

For example, the present disclosure also describes the use of metals including titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), etc. It can also be applied when forming a system thin film. Even in these cases, effects similar to those of the above embodiments can be obtained. That is, the present disclosure can be applied to the case of forming a film containing a predetermined element such as a semimetal element (semiconductor element) or a metal element.

Furthermore, in the above-described embodiment, the case where a thin film is mainly formed on the surface of the substrate is exemplified as the substrate processing step, but the present disclosure is not limited thereto. That is, the present disclosure can be applied to film formation processes other than the thin films exemplified in the above embodiments, in addition to the thin film formation exemplified in the above embodiments. In addition, the specific content of substrate processing does not matter; it includes not only film formation processing, but also heat processing (annealing processing), plasma processing, diffusion processing, oxidation processing, nitriding processing, lithography processing, carrier activation after ion implantation, and flattening. It can also be applied to other substrate processing such as reflow processing for conversion.

It is preferable that the recipes used for each process be prepared individually according to the process content and stored in the storage device 73 via the telecommunications line or the external storage device 81. Then, when starting each process, it is preferable that the CPU 71 appropriately selects an appropriate recipe from among the plurality of recipes stored in the storage device 73 according to the content of the process. This makes it possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility using one substrate processing apparatus. Furthermore, the burden on the operator can be reduced, and each process can be started quickly while avoiding operational errors.

The above-mentioned recipe is not limited to the case where it is newly created, but may be prepared by, for example, changing an existing recipe that has already been installed in the substrate processing apparatus. When changing a recipe, the changed recipe may be installed in the substrate processing apparatus via a telecommunications line or a recording medium on which the recipe is recorded. Alternatively, an existing recipe already installed in the substrate processing apparatus may be directly changed by operating the input/output device 82 provided in the existing substrate processing apparatus.

In the above embodiment, an example was described in which a film is formed using a batch-type substrate processing apparatus that processes a plurality of substrates at once. The present disclosure is not limited to the above-described embodiments, and can be suitably applied, for example, to a case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. Further, in the above embodiment, an example was described in which a film is formed using a substrate processing apparatus having a hot wall type processing furnace. The present disclosure is not limited to the above-described embodiments, and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a cold wall type processing furnace.

In the above embodiment, an example was described in which substrate processing is performed by heating with a resistance heating type heater. The present disclosure is not limited to this embodiment, and for example, heating during substrate processing may be performed by irradiating ultraviolet rays or the like. When heating by ultraviolet irradiation, for example, a deuterium lamp, helium lamp, carbon arc lamp, BRV light source, excimer lamp, mercury lamp, etc. can be used as a heating means in place of the heater 10. Further, these heating means may be used in combination with a heater.

Even when using these substrate processing apparatuses, each process can be performed under the same processing procedure and processing conditions as in the above embodiment, and the same effects as in the above embodiment can be obtained.

The above embodiments can be used in appropriate combinations. The processing procedure and processing conditions at this time can be, for example, the same as the processing procedure and processing conditions of the above embodiment.

23... Processing chamber 24... Nozzle (gas supply section)
41... Board support part (first support part)
41c... Support (first support)
46... Partition plate support part (second support part)
46c... Support (second support)
46d...Partition plate (board)
46e...Through hole 200...Wafer (substrate)

Claims

A first support part having a plurality of first pillars that supports a plurality of substrates at intervals in the vertical direction, and a through hole disposed in a central part between the plurality of substrates supported by the first support part. a second support part having a plurality of second supports supporting a plurality of plates having a substrate support;
a processing chamber that accommodates the substrate support;
a gas supply unit that supplies gas to the processing chamber;
A substrate processing apparatus comprising:
The substrate processing apparatus according to claim 1, wherein the plate has a ring shape.
The substrate processing apparatus according to claim 1 or 2, wherein the plate is provided with at least one protrusion.
The substrate processing apparatus according to claim 3, wherein the height of the protrusion is 0.1 mm to 3 mm.
The substrate processing apparatus according to any one of claims 1 to 4, wherein the diameter of the through hole is 1/6 to 3/4 of the diameter of the substrate.
The substrate processing apparatus according to any one of claims 1 to 5, wherein the diameter of the plate is 1.03 to 1.30 times the diameter of the substrate.
The substrate processing apparatus according to any one of claims 1 to 6, wherein the plurality of plates are provided with a notch in which the first support is arranged.
The first support has a support portion for supporting the substrate,
8. The substrate processing apparatus according to claim 7, wherein the notch portion is configured to allow the supporting portion to move in the vertical direction.
The substrate processing apparatus according to claim 7 or 8, wherein a gap is formed between the plate and the first support.
The substrate processing apparatus according to any one of claims 7 to 9, wherein the substrate processing apparatus is configured to be able to move the substrate to an arbitrary height by moving the first support up and down.
The substrate processing apparatus according to any one of claims 7 to 10, wherein the substrate is placed on the plate when processing the substrate.
The substrate processing apparatus according to claim 11, wherein the substrate is placed on the plate when the temperature of the substrate is −100° C. to 0° C. below the temperature at which the substrate is processed.
a first support part having a plurality of first pillars that support the plurality of substrates at intervals in the vertical direction;
a second support part having a plurality of second pillars disposed between the plurality of substrates held by the first support part and supporting a plurality of partition plates having a through hole in the center;
A board support tool comprising:
A first support part having a plurality of first pillars supporting a plurality of substrates at intervals in the vertical direction, and a through hole disposed in the center of the first support part, which is disposed between the plurality of substrates held by the first support part. a second support part having a plurality of second supports that support a plurality of partition plates having a substrate support, a processing chamber that accommodates the substrate support, and a gas supply that supplies gas to the processing chamber. accommodating the substrate support in the processing chamber of a substrate processing apparatus comprising a section;
supplying the gas into the processing chamber;
A method for manufacturing a semiconductor device having the following.
a step of heating the substrate after the step of accommodating;
15. The semiconductor device according to claim 14, wherein in the heating step, the substrate is placed on the plate when the temperature of the substrate is −100° C. to 0° C. below the temperature at which the substrate is processed. Production method.
16. The method of manufacturing a semiconductor device according to claim 14, wherein in the step of supplying the gas, supply of the gas is started after the substrate is placed on the plate.
A first support part having a plurality of first pillars supporting a plurality of substrates at intervals in the vertical direction, and a through hole disposed in the center of the first support part, which is disposed between the plurality of substrates held by the first support part. a second support part having a plurality of second supports that support a plurality of partition plates having a substrate support, a processing chamber that accommodates the substrate support, and a gas supply that supplies gas to the processing chamber. accommodating the substrate support in the processing chamber of a substrate processing apparatus comprising a section;
supplying the gas into the processing chamber;
A substrate processing method comprising:
A first support part having a plurality of first pillars supporting a plurality of substrates at intervals in the vertical direction, and a through hole disposed in the center of the first support part, which is disposed between the plurality of substrates held by the first support part. a second support part having a plurality of second supports that support a plurality of partition plates having a substrate support, a processing chamber that accommodates the substrate support, and a gas supply that supplies gas to the processing chamber. a step of accommodating the substrate support in the processing chamber of a substrate processing apparatus comprising a section;
a step of supplying the gas into the processing chamber;
A program that causes the substrate processing apparatus to execute the following via a computer.