WO2023093216A1

WO2023093216A1 - Switch circuit and electronic device

Info

Publication number: WO2023093216A1
Application number: PCT/CN2022/117882
Authority: WO
Inventors: 张紫淇; 孙霓; 黄松
Original assignee: 荣耀终端有限公司
Priority date: 2021-11-26
Filing date: 2022-09-08
Publication date: 2023-06-01
Also published as: CN115021736B; CN115021736A; EP4210226A4; EP4210226A1

Abstract

The embodiments of the present application provide a switch circuit and an electronic device, and relate to the technical field of circuits, which can reduce a conduction impedance. The switch circuit comprises an external node, an internal node, an enhanced gallium nitride high-electron-mobility transistor and a driving module, wherein the enhanced gallium nitride high-electron-mobility transistor comprises a first gate electrode, a first electrode and a second electrode; the driving module comprises a control end; the first gate electrode is coupled to the control end, the first electrode is coupled to the external node, and the internal node is coupled to the second electrode; the external node receives a charging voltage, the driving module controls the enhanced gallium nitride high-electron-mobility transistor to be turned on or off, and when the enhanced gallium nitride high-electron-mobility transistor is turned on, the charging voltage is transmitted to the internal node; or the internal node receives the charging voltage, the driving module controls the enhanced gallium nitride high-electron-mobility transistor to be turned on or off, and when the enhanced gallium nitride high-electron-mobility transistor is turned on, the charging voltage is transmitted to the external node.

Description

Switching circuits and electronic equipment

This application claims priority to a Chinese patent application with application number 202111425594.7 and application title "Switching Circuits and Electronic Devices" filed with the State Intellectual Property Office of China on November 26, 2021, the entire contents of which are incorporated herein by reference .

technical field

The present application relates to the field of circuit technology, in particular to a switch circuit and electronic equipment.

Background technique

Two-way charging means that mobile phones, tablets, laptops and other terminals can be charged through chargers, mobile power supplies, etc., that is, forward charging; mobile phones, tablets, laptops and other electronic devices can also be turned into mobile power supplies to directly charge other terminals. Charging electronic devices to be charged, for example, can charge electronic devices such as mobile phones, tablets, laptops, and smart wearable devices, that is, reverse charging. Electronic devices with a bidirectional charging function are attracting more and more attention from users because they can effectively and timely provide emergency power to other electronic devices.

In order to realize the bidirectional turn-on and turn-off functions of bidirectional charging, two back-to-back Metal Oxide Semiconductor field effect transistors (MOSFETs) are generally set in electronic equipment to avoid using a MOSFET, due to the MOSFET itself With a body diode, even if the MOSFET is turned off, there will still be current leaking through the body diode of the MOSFET, that is, a MOSFET cannot realize the shutdown function. However, the large on-resistance and low switching frequency of the MOSFET lead to serious heating of the device and limited input and output power.

Contents of the invention

In order to solve the above technical problems, the present application provides a switch circuit and electronic equipment. On-resistance can be reduced.

In the first aspect, an embodiment of the present application provides a switch circuit, the switch circuit includes: an external node, an internal node, a first switch module, and a drive module; the first switch module includes an enhanced gallium nitride high electron mobility transistor, and the enhanced The gallium nitride high electron mobility transistor includes a first gate, a first pole and a second pole; the driving module includes a control terminal; the first gate is coupled to the control terminal, the first pole is coupled to an external node, and the internal node is coupled to a second pole. Diode coupling; the external node is used to receive the charging voltage and transmit the charging voltage to the enhanced GaN high electron mobility transistor; the driving module is used to control the enhanced GaN high electron mobility transistor to turn on or off, When the enhancement mode GaN high electron mobility transistor is turned on, the charging voltage is transmitted to the internal node to be transmitted to the charging conversion chip through the internal node; or, the internal node is used to receive the charging voltage and transmit the charging voltage to the enhanced Gallium nitride high electron mobility transistor; the drive module is used to control the enhancement mode gallium nitride high electron mobility transistor to turn on or off, when the enhancement mode gallium nitride high electron mobility transistor is turned on, the charging voltage is transmitted to the outside node to be transmitted to the electronic device to be charged through an external node.

The driving module controls the enhanced gallium nitride high electron mobility transistor to turn on or off, and realizes the bidirectional turn-on and turn-off functions of the switch circuit. And because the enhancement mode GaN high electron mobility transistor itself does not have a body diode, there will be no current leakage problem when the enhancement mode GaN high electron mobility transistor is turned off. In this way, through an enhancement GaN-type high electron mobility transistors can realize bidirectional turn-on and turn-off functions. Compared with setting two back-to-back metal-oxide-semiconductor field-effect transistors, the layout size of components is reduced. In addition, since the enhanced gallium nitride high electron mobility transistor itself has the characteristics of low on-resistance, the setting of the enhanced gallium nitride high electron mobility transistor can reduce the loss of the switching circuit and reduce the power consumption of the switching circuit , which can alleviate the problem of device heating.

Exemplarily, when the external node receives the charging voltage, the external node can be coupled with the charger, for example, and the internal node can be coupled with the charging conversion chip; when the internal node receives the charging voltage, the internal node can be coupled with the charging conversion chip, for example, the external A node may, for example, be coupled to an electronic device to be charged.

Exemplarily, the electronic device to be charged is, for example, a mobile phone to be charged.

In some possible implementations, the driving module further includes a reference terminal, and the second pole of the enhanced gallium nitride high electron mobility transistor and the reference terminal of the control module are coupled to the reference point; when the external node receives the charging voltage, the driving module Based on the voltage of the reference point, the first driving voltage is sent to the first gate, and the enhanced GaN high electron mobility transistor is turned on in response to the first driving voltage, and the charging voltage is transmitted to the internal node; the driving module is also based on the reference point The voltage at the first gate sends the second driving voltage to the first gate, and the enhancement-mode gallium nitride high electron mobility transistor is turned off in response to the second driving voltage; or, when the internal node receives the charging voltage, the driving module sends the voltage to the first gate based on the voltage of the reference point. The first gate sends the third driving voltage, and the enhanced GaN high electron mobility transistor is turned on in response to the third driving voltage, and transmits the charging voltage to the external node; the driving module also sends the fourth driving voltage to the first gate voltage, the enhancement mode GaN high electron mobility transistor is turned off in response to the fourth driving voltage.

By setting the enhanced gallium nitride high electron mobility transistor, when charging forward, the driving module outputs the first driving voltage based on the voltage of the reference point, so that the difference between the voltage of the first gate and the voltage of the second pole is greater than The threshold voltages of the first gate and the second pole of the enhanced gallium nitride high electron mobility transistor, so as to keep the first switch module in the on state, and ensure the normal charging; when the positive direction is turned off (complete charging or When encountering an abnormal situation), the driving module outputs the second driving voltage based on the voltage of the reference point, so that the difference between the voltage of the first gate and the voltage of the second electrode is smaller than the second driving voltage of the enhanced GaN high electron mobility transistor. A gate and the threshold voltage of the second pole, and then turn the first switch module from on to off; when reverse charging, the drive module outputs a third drive voltage based on the voltage of the reference point, so that the first gate The difference between the voltage of the first electrode and the voltage of the first electrode is greater than the threshold voltage of the first gate and the first electrode of the enhancement-mode gallium nitride high electron mobility transistor, thereby keeping the first switch module in an on state and ensuring the charging Normal operation; when the reverse cut-off (complete charging or encountered abnormal conditions), in order to prevent the first switch module from opening when the voltage at the first pole drops, the drive module outputs the fourth drive voltage through the control terminal, so that the first The difference between the voltage of the gate and the voltage of the first electrode is always smaller than the threshold voltage of the first gate and the first electrode of the enhanced gallium nitride high electron mobility transistor, so that the first switch module is always in the off state, That is to realize the bidirectional on and off function. In addition, during forward charging, forward shutdown and reverse charging, the driving module outputs the driving voltage based on the voltage of the reference point, which simplifies the calculation process of the driving module.

In some possible implementation manners, on the basis that the second pole of the above-mentioned enhanced gallium nitride high electron mobility transistor and the reference terminal of the control module are coupled to the reference point, the switch circuit further includes a second switch module, the second switch The module is used to prevent the internal node from transmitting the received charging voltage to the reference point when the driving module sends the fourth driving voltage to the first grid; the driving module sends the fourth driving voltage to the first grid based on the voltage of the reference point, enhancing The GaN-type high electron mobility transistor is turned off in response to the fourth driving voltage. That is, when the driving module outputs the driving voltages (the first driving voltage, the second driving voltage, the third driving voltage and the fourth driving voltage), they all change based on the change of the reference point. In this way, the calculation of the driving module can be further simplified .

In some possible implementation manners, on the basis that the switch circuit includes a second switch module, the second switch module includes an N-type metal-oxide-semiconductor field-effect transistor; the N-type metal-oxide-semiconductor field-effect transistor includes a second gate, source and drain; the source is coupled to the second pole, the drain is coupled to the internal node, and the signal obtained by the second gate can control whether the NMOS field effect transistor is turned on or not. When the NMOSFET is placed between the internal node and the second electrode of the enhancement-mode GaN high electron mobility transistor, the reference point can be separated from the internal node, so that not only the positive During forward charging, forward turning off and reverse charging, the driving module outputs a driving voltage based on the voltage of the reference point, so that the first switch module is turned on during forward charging and reverse charging and turned off when forward turning off ; and when turning off in the reverse direction, the driving module can output the driving voltage based on the voltage of the reference point, so that the first switch module is completely turned off when turning off in the reverse direction, that is, in different stages, the driving module is based on the reference point The voltage output drive voltage, so that the calculation process of the drive module is further simplified. In addition, although the switch circuit in this embodiment includes an enhanced bidirectional GaN high electron mobility transistor and an N-type metal oxide semiconductor field effect transistor, the enhanced bidirectional GaN high electron mobility transistor itself has an on-resistance Low characteristic, therefore, compared with two metal-oxide-semiconductor field-effect transistors, the on-resistance of the switching circuit of the present embodiment is reduced, and it is verified that it includes an enhancement-mode bidirectional gallium nitride high electron mobility transistor and an N-type metal Compared with the switching circuit of two metal oxide semiconductor field effect transistors, the on-resistance of the switching circuit of the oxide semiconductor field effect transistor can be reduced by 25%, so that the switching loss can be reduced, the power consumption can be reduced, and the heating can be alleviated.

In some possible implementation manners, on the basis that the switch circuit includes a second switch module, the second switch module includes an N-type metal-oxide-semiconductor field-effect transistor; the N-type metal-oxide-semiconductor field-effect transistor includes a second gate, source and drain; the drain is coupled to the second pole and the internal node respectively, the source is coupled to the reference point, and the signal obtained by the second gate can control whether the NMOS field effect transistor is turned on or not. When the NMOSFET is placed between the reference point and the second electrode of the enhancement mode GaN high electron mobility transistor, the reference point can be separated from the internal node, so that not only the positive During forward charging, forward turning off and reverse charging, the driving module outputs a driving voltage based on the voltage of the reference point, so that the first switch module is turned on during forward charging and reverse charging and turned off when forward turning off ; and when turning off in the reverse direction, the driving module can output the driving voltage based on the voltage of the reference point, so that the first switch module is completely turned off when turning off in the reverse direction, that is, in different stages, the driving module is based on the reference point The voltage output drive voltage, so that the calculation process of the drive module is further simplified. In addition, although the switch circuit in this embodiment includes an enhanced bidirectional GaN high electron mobility transistor and an N-type metal oxide semiconductor field effect transistor, the enhanced bidirectional GaN high electron mobility transistor itself has an on-resistance Therefore, compared with two MOSFETs, the on-resistance of the switching circuit of this embodiment is reduced, and since the second switching module is not located on the charging path, the second switching module can For low-power devices, it has been verified that the switching circuit (not in the charging path) including the enhancement-mode bi-directional GaN high electron mobility transistor and the N-type MOSFET is compared to two MOSFETs The switching circuit of the crystal, the switching circuit of the embodiment of the present application can reduce the on-resistance by more than 40%, so that the switching loss can be further reduced, the power consumption can be reduced, and the heating can be alleviated.

In some possible implementations, on the basis that the drain is coupled to the second electrode and the internal node, and the source is coupled to the reference point, the range of the on-resistance of the NMOS field effect transistor is greater than or equal to 1 ohm, and less than or equal to 100 ohms; the withstand voltage range of the second gate to the source of the N-type metal oxide semiconductor field effect transistor is greater than or equal to 5V, and less than or equal to 60V; the N-type metal oxide semiconductor field effect transistor The drain-source breakdown voltage range of the effect transistor is greater than or equal to 10V and less than or equal to 120V. That is, the second switch module is a low-power metal-oxide-semiconductor field effect transistor, and the loss of the second switch module can be relatively low, which can further reduce the power consumption of the switch circuit.

In some possible implementation manners, on the basis that the second switch module includes an N-type MOSFET, the first gate is coupled to the second gate. The first gate can obtain the signal alone, or it can be coupled with the second gate, and the signal output from the control terminal of the driving module can simultaneously control the on or off of the first switch module and the second switch module, thus simplifying the switching The structure of the circuit.

In some possible implementations, the switch circuit further includes a resistor; the first end of the resistor is coupled to the reference point, and the second end of the resistor is grounded. By setting the resistor, it can be turned off in the forward direction and in the reverse direction. The voltage of the reference point drops to 0V quickly, and the voltage of the driving module based on the reference point also drops to 0V quickly, that is, the charge in the enhanced bidirectional GaN high electron mobility transistor and the N-type metal-oxide-semiconductor field-effect transistor The rapid discharge makes the enhanced bidirectional GaN high electron mobility transistor and the NMOS field effect transistor rapidly turned off.

In some possible implementations, on the basis that the switch circuit includes a resistor, the resistance value of the resistor is greater than 100 kohms, that is, the current of the reference point will not be too large when the reference point is discharged to the ground, and the reference point can also be made The voltage drops to 0V relatively quickly.

In some possible implementation manners, the enhancement mode GaN high electron mobility transistor can be an ordinary enhancement mode bidirectional GaN high electron mobility transistor, that is, the gate-source threshold voltage of the enhancement mode GaN high electron mobility transistor and The gate-drain threshold voltages are different; it can also be an enhanced bidirectional gallium nitride high electron mobility transistor, that is, the threshold voltage of the gate and the second pole is equal to the threshold voltage of the gate and the first pole.

In a second aspect, an embodiment of the present application provides an electronic device, the electronic device includes the switching circuit described in any one of the foregoing, and can realize all the effects of the foregoing switching circuit.

Description of drawings

FIG. 1 is a schematic structural diagram of an electronic device provided in an embodiment of the present application;

FIG. 2 is one of a schematic diagram of an application scenario of an electronic device provided in an embodiment of the present application;

FIG. 3 is one of a schematic diagram of an application scenario of an electronic device provided in an embodiment of the present application;

FIG. 4 is a schematic structural diagram of a switch circuit provided in an embodiment of the present application;

FIG. 5 is a schematic structural diagram of another electronic device provided in the embodiment of the present application;

FIG. 6 is a schematic structural diagram of another switch circuit provided by the embodiment of the present application;

FIG. 7 is a schematic structural diagram of another switch circuit provided by the embodiment of the present application;

FIG. 8 is a schematic structural diagram of another electronic device provided in the embodiment of the present application;

FIG. 9 is a simulation diagram during forward charging provided by the embodiment of the present application;

FIG. 10 is a simulation diagram during forward shutdown provided by the embodiment of the present application;

FIG. 11 is a simulation diagram during reverse charging provided by the embodiment of the present application;

FIG. 12 is a simulation diagram during reverse turn-off provided by the embodiment of the present application;

FIG. 13 is a schematic structural diagram of another switch circuit provided by the embodiment of the present application;

FIG. 14 is a schematic structural diagram of another switch circuit provided by the embodiment of the present application;

FIG. 15 is a schematic structural diagram of another electronic device provided by the embodiment of the present application;

Fig. 16 is another simulation diagram during forward charging provided by the embodiment of the present application;

FIG. 17 is another simulation diagram during forward shutdown provided by the embodiment of the present application;

Fig. 18 is another simulation diagram during reverse charging provided by the embodiment of the present application;

FIG. 19 is another simulation diagram of reverse turn-off provided by the embodiment of the present application.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

The term "and/or" in this article is just an association relationship describing associated objects, which means that there can be three relationships, for example, A and/or B can mean: A exists alone, A and B exist simultaneously, and there exists alone B these three situations.

The terms "first" and "second" in the description and claims of the embodiments of the present application are used to distinguish different objects, rather than to describe a specific order of objects. For example, the first target object, the second target object, etc. are used to distinguish different target objects, rather than describing a specific order of the target objects.

In the embodiments of the present application, words such as "exemplary" or "for example" are used as examples, illustrations or illustrations. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application shall not be interpreted as being more preferred or more advantageous than other embodiments or design schemes. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete manner.

In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more. For example, multiple processing units refers to two or more processing units; multiple systems refers to two or more systems.

The embodiment of the present application provides an electronic device. The electronic device provided in the embodiment of the present application may be a mobile phone, a computer, a tablet computer, a personal digital assistant (PDA for short), a vehicle-mounted computer, a TV, a smart wearable device, a smart Household equipment, etc., the embodiment of the present application does not specifically limit the specific form of the above-mentioned electronic equipment. For convenience of description, the electronic device is a mobile phone as an example for description below.

The specific structure and application of the electronic device provided by the embodiments of the present application will be described below.

As shown in Figure 1, Figure 1 shows a schematic structural view of an electronic device provided by an embodiment of the present application, a mobile phone 100 includes an external interface 10, a switch circuit 20, a charging conversion chip 30, a battery 40 and a system on chip (System on Chip , SoC) 50 and other structures. Wherein, the system on chip (SoC chip) 50 is integrated with, for example, a central processing unit (Central Processing Unit, CPU), an image processing unit (Graphic Processing Unit, GPU) and a modem (Modem). The setting of the external interface 10 enables the mobile phone 100 to be coupled with an external device. Wherein, the external interface 10 is, for example, a USB interface or the like. External devices may include, for example, electronic devices such as chargers, mobile power supplies, earphones, mobile phones to be charged, tablet computers, and notebook computers. For example, the system on chip (SoC chip) 50 can be coupled with the external interface 10, the system on chip (SoC chip) 50 can receive the voltage of the external interface 10, and identify the type of the external device connected to the external interface 10 based on the charging protocol, so as to Determine whether the external interface 10 is connected to the mobile phone to be charged, or the charger.

Exemplarily, referring to FIG. 1 and FIG. 2 , when the external device connected to the external interface 10 is a charger 200 , that is, when the charger 200 needs to charge the mobile phone 100 , the switch circuit 20 is turned on. The charging voltage output by the charger 200 is transmitted to the charging conversion chip 30 through the external interface 10 and the switching circuit 20 . The charging conversion chip 30 converts the charging voltage, and transmits the converted voltage to the battery 40 , so as to charge the battery 40 . In addition, the converted voltage is transmitted to the system on chip (SoC chip) 50 to provide power for the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 to ensure the normal operation of the CPU, GPU and Modem. After the charging is completed, the switch circuit 20 is turned off, and the charging voltage output by the charger 200 cannot be transmitted to the charging conversion chip 30 . The charging conversion chip 30 cannot supply power to the battery 40 and the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 . At this time, the battery 40 provides working voltage for the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 to ensure the normal operation of the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 .

Exemplarily, referring to FIG. 1 and FIG. 3 , when the external device connected to the external interface 10 is the mobile phone 300 to be charged, that is, when the mobile phone 100 needs to charge the mobile phone 300 to be charged, the switch circuit 20 is turned on. The charging voltage output by the battery 40 is transmitted to the mobile phone 300 to be charged through the charging conversion chip 30 , the switch circuit 20 and the external interface 10 , so as to charge the mobile phone 300 to be charged.

In order to solve the problems in the background technology, an embodiment of the present application provides a switch circuit, where the switch circuit includes a first switch module and a drive module. The first switch module is an enhanced gallium nitride high electron mobility transistor. The enhanced gallium nitride high electron mobility transistor includes a first gate, a first pole and a second pole. The driving module is coupled to the first gate, and is used for outputting a driving voltage to the first gate.

It can be understood that the turn-on or turn-off of the enhancement-mode GaN high electron mobility transistor is related to its threshold voltage.

For the enhanced gallium nitride high electron mobility transistor, in the case of forward charging (the voltage at the first pole needs to be transmitted to the second pole), when the voltage of the first gate and the voltage of the second pole When the difference between the voltage of the first gate and the voltage of the second electrode is less than the threshold voltage, the enhanced GaN high electron mobility transistor is turned on; rate transistor off. In the case of reverse charging (the voltage at the second pole needs to be transmitted to the first pole), when the difference between the voltage of the first gate and the voltage of the first pole is greater than the threshold voltage, the enhanced gallium nitride high The electron mobility transistor is turned on; when the difference between the voltage of the first gate and the voltage of the first electrode is less than the threshold voltage, the enhanced gallium nitride high electron mobility transistor is turned off.

Since the voltage of the first gate is the driving voltage output by the driving module, the enhancement mode GaN high electron mobility transistor can be controlled to be turned on or off through the driving voltage output by the driving module, that is, in order to realize bidirectional The bidirectional turn-on and turn-off function of charging, the driving voltage is a voltage output from the driving module to the first gate, and this voltage can control the turn-on or turn-off of the enhanced gallium nitride high electron mobility transistor. Moreover, since the enhancement mode GaN high electron mobility transistor itself does not have a body diode, there will be no current leakage problem when the enhancement mode GaN high electron mobility transistor is turned off. In this way, the bidirectional turn-on and turn-off functions can be realized through the enhanced GaN high electron mobility transistor. Compared with setting two back-to-back MOS transistors, the layout size of components is reduced. In addition, since the enhanced gallium nitride high electron mobility transistor itself has the characteristics of low on-resistance, the setting of the enhanced gallium nitride high electron mobility transistor can reduce the loss of the switching circuit and reduce the power consumption of the switching circuit , and relieve fever.

The embodiment of the present application does not specifically limit the type of the enhanced gallium nitride high electron mobility transistor. For example, it may be an ordinary enhanced gallium nitride high electron mobility transistor, or an enhanced bidirectional gallium nitride high electron mobility transistor.

When the first switch module is an ordinary enhanced gallium nitride high electron mobility transistor, the first pole is, for example, the drain of the enhanced gallium nitride high electron mobility transistor, and the second pole is, for example, the enhanced gallium nitride high electron mobility transistor. Source of the electron mobility transistor. In the case of forward charging (the voltage at the drain needs to be transferred to the source), when the difference between the first gate voltage and the source voltage of the enhancement-mode GaN high electron mobility transistor is greater than the gate-source threshold voltage , the enhanced gallium nitride high electron mobility transistor is turned on; when the difference between the first gate voltage and the source voltage of the enhanced gallium nitride high electron mobility transistor is less than the gate-source threshold voltage, the enhanced gallium nitride high The electron mobility transistor is turned off. In the case of reverse charging (the voltage at the source needs to be transferred to the drain), when the difference between the first gate voltage and the drain voltage of the enhancement-mode GaN high electron mobility transistor is greater than the gate-drain threshold voltage , the enhanced gallium nitride high electron mobility transistor is turned on; when the difference between the first gate voltage and the drain voltage of the enhanced gallium nitride high electron mobility transistor is less than the gate-drain threshold voltage, the enhanced gallium nitride high The electron mobility transistor turns on. Wherein, the gate-source threshold voltage and the gate-drain threshold voltage are different.

The so-called enhanced bidirectional GaN high electron mobility transistor means that the first pole and the second pole of the enhancement mode GaN high electron mobility transistor are equivalent. That is, the distance from the area where the second pole is located to the channel region is equal to the distance from the area where the first pole is located to the channel area, and the material of the area where the second pole is located is the same as that of the area where the first pole is located and the device structure same. In the case of forward charging (the voltage at the first pole needs to be transferred to the second pole), the difference between the first gate voltage and the second pole voltage of the enhanced bidirectional GaN high electron mobility transistor is greater than the gate The enhancement mode bidirectional GaN high electron mobility transistor is turned on when the threshold voltage of the first pole and the second pole is lower than the difference between the first gate voltage and the second pole voltage When the threshold voltage of the gate and the second electrode is lower, the enhancement mode bidirectional GaN high electron mobility transistor is turned off. In the case of reverse charging (the voltage at the second pole needs to be transferred to the first pole), the difference between the first gate voltage and the first pole voltage of the enhanced bidirectional GaN high electron mobility transistor is greater than the gate voltage When the threshold voltage of the first electrode and the first electrode, the enhanced bidirectional GaN high electron mobility transistor is turned on; the difference between the first gate voltage and the first electrode voltage of the enhanced bidirectional GaN high electron mobility transistor is less than When the threshold voltage of the gate and the first electrode is lower, the enhancement mode bidirectional GaN high electron mobility transistor is turned off. Wherein, the threshold voltage of the gate and the second electrode is equal to the threshold voltage of the gate and the first electrode.

It should be noted that, regarding the structure of the driving module, the embodiment of the present application does not limit the specific structure of the driving module. For example, the driver module includes a driver chip and a Microcontroller Unit (MCU), wherein the MCU and the driver chip can be set separately, or the driver chip can be integrated with a MUC.

There are various switch circuits that reduce power consumption by setting enhancement-mode gallium nitride high electron mobility transistors, and typical examples are described in detail below. In order to describe the subsequent solutions more conveniently and clearly, the following example takes the first switch module as an enhanced bidirectional gallium nitride high electron mobility transistor as an example for illustration. It can be understood that since the threshold voltages of the first gate and the second electrode of the enhanced bidirectional gallium nitride high electron mobility transistor are equal to the threshold voltages of the first gate and the first electrode, no matter whether the following embodiments are The threshold voltage of the first gate and the second electrode, or the threshold voltage of the first gate and the first electrode are both referred to as the threshold voltage of the enhanced bidirectional GaN high electron mobility transistor. In addition, in order to distinguish the driving voltage received by the first gate of the enhanced bidirectional GaN high electron mobility transistor at different stages, the following example uses the first gate of the enhanced bidirectional GaN high electron mobility transistor when charging in the forward direction The received driving voltage is the first driving voltage, wherein the first driving voltage can control the enhanced bidirectional GaN high electron mobility transistor to turn on when it is forwardly charged; The driving voltage received by the first gate of the mobility transistor is the second driving voltage, wherein the second driving voltage can control the enhanced bidirectional gallium nitride high electron mobility transistor to turn off in the forward direction; The driving voltage received by the first gate of the gallium high electron mobility transistor is the third driving voltage, wherein the third driving voltage can control the enhanced bidirectional gallium nitride high electron mobility transistor to turn on when reverse charging; reverse turn off When off, the driving voltage received by the first gate of the enhanced bidirectional GaN high electron mobility transistor is the fourth driving voltage, wherein the fourth driving voltage can control the reverse turn-off of the enhanced bidirectional GaN high electron mobility transistor . The following content does not constitute a limitation to this application.

In one example, as shown in FIG. 4 , the switch circuit 20 includes an internal node V _BUS , an external node V _USB , a first switch module 21 and a drive module 22 . The first switch module 21 includes an enhanced bidirectional GaN high electron mobility transistor. The enhanced bidirectional GaN high electron mobility transistor includes a first gate G1, a first pole D1 and a second pole D2. The driving module 22 includes a reference terminal R1 and a control terminal C. The first pole D1 is coupled to the external node V _USB , the second pole D2 is coupled to the reference point R2 , the reference terminal R1 is coupled to the reference point R2 , and the internal node V _BUS is coupled to the second pole D2 . The control terminal C of the driving module 22 is coupled to the first grid G1, and the driving module 22 outputs a driving voltage to the first grid G1 through the control terminal C. Referring to FIG. 5 , the switch circuit 20 is coupled to the external interface 10 through the external node V _USB , and the switch circuit 20 is coupled to the charging conversion chip 30 through the internal node V _BUS .

The driving module 22 collects the voltage at the reference point R2 (the second pole D2 ) in real time. In the case of forward charging (the charging voltage received by the external node V _USB needs to be transmitted to the internal node V _BUS ), that is, when the enhanced bidirectional GaN high electron mobility transistor needs to be turned on and kept in the on state, the driving module 22 Outputting the first driving voltage based on the voltage at the reference point R2 (second pole D2), wherein the difference between the first driving voltage and the collected voltage at the reference point R2 (second pole D2) is kept at the first difference in real time , the first difference is greater than the threshold voltage of the enhanced bidirectional GaN high electron mobility transistor, that is, the voltage difference between the voltage of the first gate G1 and the voltage of the second electrode D2 is greater than the enhanced bidirectional GaN high electron mobility The threshold voltage of the transistor, in this way, during forward charging, it can ensure that the enhanced bidirectional gallium nitride high electron mobility transistor is always in the on state, thereby ensuring the normal progress of forward charging.

When charging is completed, etc., when it is necessary to change the enhanced bidirectional GaN high electron mobility transistor from the on state to the off state, the driving module 22 outputs the second driving voltage based on the voltage at the reference point R2 (D2), Wherein, the difference between the second driving voltage and the collected voltage at the reference point R2 (D2) is kept at the second difference in real time, and the second difference is smaller than the threshold voltage of the enhanced bidirectional gallium nitride high electron mobility transistor, that is The voltage difference between the voltage of the first gate G1 and the voltage of the second electrode D2 is smaller than the threshold voltage of the enhanced bidirectional GaN high electron mobility transistor, so that the enhanced bidirectional GaN high electron mobility transistor is turned off broken.

In the case of reverse charging (the charging voltage received by the internal node V _BUS needs to be transmitted to the external node V _USB ), that is, when the enhanced bidirectional GaN high electron mobility transistor needs to be turned on and kept on, the driving module 22 The third drive voltage is output based on the voltage at the reference point R2 (D2), wherein the difference between the third drive voltage and the collected voltage at the reference point R2 (D2) is a third difference, and the third difference is greater than the enhanced Threshold voltage of bidirectional GaN high electron mobility transistors. And because the maximum value of the voltage at the first pole D1 is equal to the voltage at the reference point R2 (D2), the difference between the voltage of the first gate G1 and the voltage of the first pole D1 must be greater than the height of the enhanced bidirectional GaN The threshold voltage of the electron mobility transistor, in this way, during reverse charging, it can ensure that the enhanced bidirectional gallium nitride high electron mobility transistor is always in the on state, thereby ensuring the normal progress of reverse charging.

When charging is completed, etc., when it is necessary to change the enhanced bidirectional gallium nitride high electron mobility transistor from the on state to the off state, the driving module 22 outputs a fourth driving voltage to the first gate G1, and the fourth driving voltage For example, 0. Since the fourth driving voltage is 0V, even if the voltage at the first pole D1 drops due to the turn-off of the enhanced bidirectional GaN high electron mobility transistor, the voltage at the first pole D1 will be greater than or equal to 0V, that is, the first pole D1 The difference between the four driving voltages (0V) and the first pole D1 (greater than or equal to 0V) must be less than or equal to 0, that is, the difference between the voltage of the first grid G1 and the voltage of the first pole D1 must be less than or equal to Equal to 0, which is less than the threshold voltage of the enhanced bidirectional GaN high electron mobility transistor. Therefore, a complete turn-off of the enhancement-mode bi-directional GaN high electron mobility transistor is achieved.

From the above introduction, it can be seen that setting an enhanced bidirectional GaN high electron mobility transistor can realize bidirectional turn-on and turn-off functions, and the structure is simple. In addition, since the enhanced gallium nitride high electron mobility transistor itself has the characteristics of low on-resistance, the setting of the enhanced gallium nitride high electron mobility transistor can reduce the loss of the switching circuit and reduce the power consumption of the switching circuit , and relieve fever. In addition, during forward charging, forward shutdown and reverse charging, the driving module outputs the driving voltage based on the voltage of the reference point, which simplifies the calculation process of the driving module.

The specific principle of realizing the bidirectional turn-on and turn-off functions of the switch circuit 20 shown in FIG. 4 will be introduced below in conjunction with electronic devices. Wherein, the description is made by taking the charging voltage as 20V and the threshold voltage of the enhanced bidirectional GaN high electron mobility transistor as 1.5V as an example.

Exemplarily, referring to FIG. 2 , FIG. 4 and FIG. 5 , when the external device connected to the external interface 10 is the charger 200, that is, when the charger 200 needs to charge the mobile phone 100, that is, the charging voltage received by the external node V _USB When transmission to the internal node V _BUS is required, the enhanced bidirectional GaN high electron mobility transistor needs to be turned from an off state to an on state. When the enhanced bidirectional GaN high electron mobility transistor is in the off state, the voltage at the external node V _USB is the charging voltage 20V, at this time, the internal node V _BUS is 0V, the first pole D1 and the external node V _USB The voltages of the first gate G1, the second pole D2 and the reference point R2 are the same as the voltages of the internal node V _BUS . In order to turn on the enhanced bidirectional GaN high electron mobility transistor, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform calculations based on the reference point R2, so that the output of the first A voltage difference between the driving voltage and the collected reference point R2 is kept at the first difference of 5V in real time. Therefore, when the voltage of the reference point R2 collected by the driving module 22 is 0V, the driving module 22 sends a first driving voltage of 5V to the first gate G1. At this time, the difference between the voltage (5V) of the first gate G1 and the voltage (0V) of the second pole D2 is 5V, which is greater than the threshold voltage of 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the enhanced bidirectional gallium nitride GaN high electron mobility transistor turns on. The voltage of the second pole D2 gradually rises from 0V to 20V. Since the driving module 22 will collect the voltage of the reference point R2 (second pole D2) in real time, and adjust the first driving voltage output to the first grid G1 in real time based on the collected voltage of the reference point R2 (second pole D2), wherein , the difference between the first driving voltage and the voltage at the reference point R2 (the second pole D2 ) is always kept at the first difference of 5V. Therefore, when the voltage of the reference point R2 (second pole D2) gradually rises to 20V, the driving module 22 will also adjust its output first driving voltage in real time based on the voltage of the reference point R2 (second pole D2) to gradually increase from 5V to 25V. In this way, the voltage difference between the first gate G1 and the second pole D2 is kept at 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor. During the charging process, the enhanced bidirectional GaN GaN high electron mobility transistors are always on. The charging voltage 20V of the external node V _USB is transmitted to the internal node V _BUS through the conduction-enhanced bidirectional GaN high electron mobility transistor, so as to be transmitted to the charging conversion chip 30 through the internal node V _BUS . The charging conversion chip 30 converts the charging voltage, and transmits the converted voltage to the battery 40 , so as to charge the battery 40 . In addition, the converted voltage is transmitted to the system on chip (SoC chip) 50 to provide power for the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 to ensure the normal operation of the CPU, GPU and Modem.

When the charging is completed; or when an abnormal situation such as excessive voltage will cause damage to the mobile phone 100 is encountered during the charging process, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor from the on state to the off state. When the enhanced bidirectional GaN high electron mobility transistor is in the on state, the voltages of the external node V _USB , the internal node V _BUS , the first pole D1, the second pole D2 and the reference point R2 are all charging voltages of 20V. A grid G1 has a voltage of 25V. In order to turn off the enhanced bidirectional GaN high electron mobility transistor, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform calculations based on the reference point R2, so that the output of the first A voltage difference between the driving voltage and the collected reference point R2 is kept at the second difference 0V in real time. Therefore, when the driving module 22 collects a voltage of 20V at the reference point R2, the driving module 22 sends a second driving voltage of 20V to the first grid G1. At this time, the difference between the voltage of the first gate G1 and the voltage of the second electrode D2 is 0V, which is less than the threshold voltage of 1.5V of the enhanced bidirectional GaN high electron mobility transistor, and the enhanced bidirectional GaN high electron mobility rate transistor off. And because the driving module 22 will collect the voltage of the reference point R2 (second pole D2) in real time, and adjust the second driving voltage output to the first grid G1 in real time based on the collected voltage of the reference point R2 (second pole D2), Wherein, the difference between the second driving voltage and the voltage of the reference point R2 (the second pole D2 ) is always kept at the second difference of 0V. Even after the enhanced bidirectional GaN high electron mobility transistor is turned off, the voltage of the reference point R2 (second pole D2) will drop to 0V, and the second driving voltage output by the driving module 22 will also drop accordingly, so that the first The voltage difference between the first gate G1 and the second pole D2 of the switch module 21 is always kept at 0V, which ensures that the enhanced bidirectional GaN high electron mobility transistor is always in an off state. In this way, the charging voltage output by the charger 200 cannot be transmitted to the charging conversion chip 30 . The charging conversion chip 30 cannot supply power to the battery 40 and the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 .

Exemplarily, in conjunction with Fig. 3, Fig. 4 and Fig. 5, when the external device connected to the external interface 10 is the mobile phone 300 to be charged, that is, when the mobile phone 100 needs to charge the mobile phone 300 to be charged, that is, the internal node V _BUS receives When the charging voltage needs to be transmitted to the external node V _USB , it is necessary to turn the enhanced bidirectional GaN high electron mobility transistor from the off state to the on state. When the enhanced bidirectional GaN high electron mobility transistor is in the off state, the voltage at the internal node V _BUS is the charging voltage 20V, at this time, the external node V _USB is 0V, the first pole D1 and the external node V _USB The voltages are the same, the voltages at the reference point R2, the second pole D2 and the internal node V _BUS are equal. In order to turn on the enhanced bidirectional GaN high electron mobility transistor, the driving module 22 collects the voltage of the reference point R2 (second pole D2) in real time, and performs calculation based on the collected reference point R2 (second pole D2), The voltage difference between the output third driving voltage and the collected reference point R2 is kept at the third difference of 5V in real time. Therefore, when the voltage of the reference point R2 collected by the driving module 22 is 20V, the driving module 22 sends a third driving voltage of 25V to the first grid G1 through the control terminal C. At this time, the difference between the voltage (25V) of the first gate G1 and the voltage (0V) of the first pole D1 is 25V, which is greater than the threshold voltage of 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the enhanced bidirectional gallium nitride The GaN high electron mobility transistor is turned on, and the voltage of the first pole D1 gradually increases from 0V to 20V. Since the voltage of the reference point R2 (the second pole D2) has been kept at 20V, the driving module 22 has been sending a third driving voltage of 25V to the first grid G1, and the third driving voltage (25V) is the same as that of the first pole D1 (maximum 20V), the voltage difference is greater than or equal to 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor. During the charging process, the enhanced bidirectional GaN high electron mobility transistor is always at The conduction state ensures the normal charging.

When the charging is completed; or when an abnormal situation such as excessive voltage is encountered during the charging process will cause damage to the mobile phone 300 to be charged, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor from the on state to the off state. When the enhanced bidirectional GaN high electron mobility transistor is turned on, the voltages of the internal node V _BUS , the external node VUSB, the first pole D1 , the second pole D2 and the reference point R2 are all charging voltages of 20V. The voltage of the first grid G1 is, for example, 25V. In order to turn off the enhancement mode bi-directional GaN high electron mobility transistor. At this time, the driving module 22 cannot perform calculations based on the reference point R2, so that the difference between the output fourth driving voltage and the voltage at the reference point R2 remains at the fourth difference 0V, that is, the fourth driving voltage is equal to the voltage at the reference point R2. This is because if the driving module 22 outputs the fourth driving voltage based on the voltage of the reference point R2, since the voltage of the reference point R2 and the internal node V _BUS are both 20V, the fourth driving voltage output by the driving module 22 is 20V. And because the voltage of the first pole D1 will gradually decrease due to the turn-off of the enhanced bidirectional gallium nitride high electron mobility transistor, for example, when it is reduced to 15V, the first gate G1 (20V) and the first pole D1 (15V ) is 5V, the enhanced bidirectional GaN high electron mobility transistor is turned on, but the enhanced bidirectional GaN high electron mobility transistor cannot be turned off. Therefore, in order to prevent the conduction problem of the enhanced bidirectional GaN high electron mobility transistor during the turn-off process, in this embodiment, the driving module 22 directly outputs the fourth driving voltage of 0V. When the driving module 22 outputs the fourth driving voltage of 0V to the first gate G1, even if the voltage at the first pole D1 drops, the voltage at the first pole D1 will be greater than or equal to 0V, that is, the first gate The difference between the voltage of G1 (0V) and the voltage of the first pole D1 (greater than or equal to 0V) must be less than or equal to 0, which is less than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor. Therefore, a complete turn-off of the enhancement-mode bi-directional GaN high electron mobility transistor is achieved.

In yet another example, referring to FIG. 6 , different from the previous example, the switch circuit 20 further includes a second switch module 23 . The second switch module 23 is coupled between the second pole D2 and the internal node V _BUS . The second switch module 23 includes a MOSFET, for example, may include an NMOSFET. The NMOSFET includes a second gate G2, a source S and a drain D3. The source S of the second switch module 23 is coupled to the second pole D2 of the first switch module 21, the drain D3 of the second switch module 23 is coupled to the internal node V _BUS , and the second gate G2 of the second switch module 23 is coupled to The first gate G1 of the first switch module 21 is coupled.

The second switch module 23 is set to separate the reference point R2 from the internal node V _BUS . In this way, not only during forward charging, forward shutdown and reverse charging, the driving module 22 outputs voltage based on the reference point R2 driving voltage, so that the first switch module 21 is turned on during forward charging and reverse charging and is turned off when it is turned off in the forward direction; and when it is turned off in the reverse direction, the driving module 22 can output driving voltage, so that the first switch module 21 is completely turned off when it is turned off in reverse, that is, at different stages, the driving module 22 outputs the driving voltage based on the voltage of the reference point R2, thus further simplifying the operation process of the driving module . In addition, although the switch circuit 20 in this embodiment includes an enhanced bidirectional GaN high electron mobility transistor and an NMOSFET, since the enhanced bidirectional GaN high electron mobility transistor itself has the characteristic of low on-resistance, therefore, it is relatively Compared with the two MOSFETs, the on-resistance of the switching circuit 20 of this embodiment is reduced. It has been verified that the switching circuit 20 including the enhanced bidirectional gallium nitride high electron mobility transistor and the NMOSFET is compared with the switching circuit of the two MOSFETs, The on-resistance can be reduced by 25%. In this way, switching loss can be reduced, power consumption can be reduced, and heat generation can be relieved.

In addition, referring to FIG. 6 , the switch circuit 20 further includes a resistor 24 , one end of the resistor 24 is coupled to the reference point R2 , and the other end of the resistor 24 is grounded. By setting the resistor 24, the voltage of the reference point R2 can be quickly dropped to 0V during forward shutdown and reverse shutdown, and the voltage of the driving module 22 based on the reference point R2 is also quickly dropped to 0V, that is, the enhanced The charge in the bidirectional GaN high electron mobility transistor and the NMOSFET is quickly discharged, thereby making the enhancement mode bidirectional GaN high electron mobility transistor and the NMOSFET quickly turned off.

Exemplarily, the resistance value of the resistor 24 is, for example, greater than 100 kilohms. When the resistance value of the resistor 24 is set to be greater than 100 kΩ, the current of the reference point R2 will not be too large when discharging to the ground, and the voltage of the reference point R2 will drop to 0V relatively quickly.

It should be noted that, in the above example, the resistor 24 is set in the switch circuit 20 and one end of the resistor 24 is grounded as an example, but this does not constitute a limitation to the present application. Optionally, in order to realize fast turn-off of the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET, referring to FIG. 7 , the reference terminal R1 of the driving module 22 may also be set to ground. The grounding of the reference terminal R1 makes the voltage of the reference point R2 quickly drop to 0V, and the voltage of the driving module 22 based on the reference point R2 also quickly drops to 0V.

The specific principle of realizing the bidirectional turn-on and turn-off functions of the switch circuit 20 shown in FIG. 6 will be introduced below in combination with electronic devices. Wherein, the second switch module 23 is an NMOSFET, and the threshold voltage of the NMOSFET is 2V as an example for description.

FIG. 9 is a simulation diagram of forward charging provided in this embodiment. In combination with FIG. 2, FIG. 8 and FIG. 9, when the external device connected to the external interface 10 is the charger 200, that is, the charger 200 needs to charge the mobile phone 100 When , that is, when the charging voltage received by the external node V _USB needs to be transmitted to the internal node V _BUS , it is necessary to turn the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET from the off state to the on state.

Turn-off stage, that is, before 100μs in Figure 9, the enhanced bidirectional GaN high electron mobility transistor and NMOSFET are both turned off, and the voltage at the external node V _USB is the charging voltage 20V. At this time, the internal node V _BUS is 0V , the first gate G1 and the second gate G2 are also 0V, and the voltages of the reference point R2, the second pole D2 and the source S are the same as the internal node V _BUS .

In the turn-on phase, in order to turn on the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform the operation based on the reference point R2. The operation is performed so that the voltage difference between the output first driving voltage and the collected reference point R2 is maintained at the first difference of 5V in real time. Therefore, when the voltage at the reference point R2 collected by the driving module 22 is 0V, the driving module 22 gradually applies the first driving voltage to 5V to the first grid G1 and the second grid G2 in 100 μs. It can be seen from Fig. 9 that at 101.8 μs, the first driving voltage applied by the first gate G1 and the second gate G2 starts to be greater than 2V, that is, the voltage of the first gate G1 (greater than 2V) and the second pole D2 (0V) The voltage difference is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor, the enhanced bidirectional GaN high electron mobility transistor is turned on, the second gate G1 (greater than 2V) and the source S (0V ) is greater than the threshold voltage 2V of the NMOSFET, the NMOSFET is turned on, and the internal node V _BUS begins to have a voltage.

In the rising phase, between 101.8 μs and 105 μs, after both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned on, the voltage at the internal node V _BUS rises from 0V to 20V. Of course, the voltage at the reference point R2 will also rise from 0V to 20V. Since the drive module 22 collects the voltage at the reference point R2 in real time (the same as the voltage at the second pole D2) and performs calculations based on the reference point R2, the voltage difference between the first output driving voltage and the collected reference point R2 is real-time Keep at the first difference 5V. Therefore, when the voltage at the reference point R2 also rises from 0V to 20V, the first driving voltage output from the control terminal C of the driving module 22 will gradually rise to 25V.

In the conduction maintenance stage, after 105 μs, the voltages at the internal node V _BUS and the reference point R2 are both maintained at 20V, and the first driving voltage output by the control terminal C of the driving module 22 is also maintained at 25V. In this way, the first gate The voltage difference between G1 (25V) and the second pole D2 (20V) is kept at 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor. The second gate G2 (25V) and the source S (20V) The voltage difference is kept at 5V, which is greater than the threshold voltage of the NMOSFET 2V. During the charging process, the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the on state. The charging voltage 20V of the external node V _USB is transmitted to the internal node V _BUS through the conduction-enhanced bidirectional GaN high electron mobility transistor, so as to be transmitted to the charging conversion chip 30 through the internal node V _BUS . The charging conversion chip 30 converts the charging voltage, and transmits the converted voltage to the battery 40 , so as to charge the battery 40 . In addition, the converted voltage is transmitted to the system on chip (SoC chip) 50 to provide power for the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 to ensure the normal operation of the CPU, GPU and Modem.

Fig. 10 is the simulation diagram of the forward shutdown provided by this embodiment, combined with Fig. 2, Fig. 8 and Fig. 10, when the charging is completed; or, the mobile phone 100 will be damaged if it encounters an excessive voltage during the charging process, etc. In abnormal situations, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor and NMOSFET from the on state to the off state.

In the conduction phase, that is, before 305μs in Fig. 10, both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned on, the external node V _USB , the internal node V _BUS , the second pole D2, the source S, and the drain The voltages of D3 and the reference point R2 are both charging voltages of 20V. The voltages of the first grid G1 and the second grid G2 are 25V.

In the turn-off phase, in order to turn off the enhanced bi-directional GaN high electron mobility transistor and the NMOSFET, the drive module 22 will collect the voltage of the reference point R2 in real time (same as the voltage at the second pole D2) and perform the operation based on the reference point R2. operation, so that the voltage difference between the output second driving voltage and the collected reference point R2 is kept at the second difference 0V in real time. Therefore, at 305 μs, the second driving voltage output by the driving module 22 gradually drops to 20V. It can be seen from Figure 10 that at 307.4 μs, the second driving voltage applied by the first gate G1 and the second gate G2 drops to 21.5V, that is, the first gate G1 (21.5V) and the second gate D2 (20V) The voltage difference is equal to the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the voltage difference between the second gate G1 (21.5V) and the source S (20V) is less than the threshold voltage 2V of the NMOSFET. The bidirectional GaN high electron mobility transistor and the NMOSFET start to turn off, and the voltage at the internal node V _BUS starts to drop.

In the falling stage, between 307.4 μs and 312.3 μs, because the enhanced bidirectional GaN high electron mobility transistor and NMOSFET cannot be completely turned off at once when they are turned off. Therefore, the voltage at the internal node V _BUS gradually drops from 20V to 0V. Of course, the voltage at the reference point R2 gradually drops from 20V to 0V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output second driving voltage and the collected voltage of the reference point R2 is kept at the second difference 0V in real time. Therefore, when the voltage at the reference point R2 gradually drops from 20V to 0V, the second driving voltage output from the control terminal C of the driving module 22 will gradually drop to 0V accordingly.

In the off-holding stage, after 312.3 μs, the voltages at the internal node V _BUS and the reference point R2 are both kept at 0V, and the second driving voltage output by the control terminal C of the driving module 22 is also kept at 0V. In this way, the first gate The voltage difference between the pole G1 (0V) and the second pole D2 (0V) is kept at 0V, which is less than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, the second gate G2 (0V) and the source The voltage difference of S(0V) is kept at 0V, which is less than the threshold voltage of the NMOSFET 2V, so that the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the off state. The charging voltage output by the charger 200 cannot be transmitted to the charging conversion chip 30 . The charging conversion chip 30 cannot supply power to the battery 40 and the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 .

Fig. 11 is a simulation diagram during reverse charging provided by this embodiment. In combination with Fig. 3, Fig. 8 and Fig. 11, when the external device connected to the external interface 10 is the mobile phone 300 to be charged, that is, the mobile phone 100 needs to be a mobile phone to be charged When the 300 is charging, that is, when the charging voltage received by the internal node V _BUS needs to be transmitted to the external node V _USB , it is necessary to turn the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET from the off state to the on state.

Turn-off stage, that is, before 101μs in Figure 11, the enhanced bidirectional GaN high electron mobility transistor and NMOSFET are both turned off, and the voltage at the internal node V _BUS is the charging voltage 20V. At this time, the external node V _USB is 0V , the first gate G1 and the second gate G2 are also 0V, and the voltages of the reference point R2, the second pole D2 and the source S are the same as the external node V _USB .

In the turn-on phase, in order to turn on the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform the operation based on the reference point R2. operation, so that the voltage difference between the output third driving voltage and the collected reference point R2 is kept at the third difference 5V in real time. Therefore, when the voltage at the reference point R2 collected by the driving module 22 is 0V, the driving module 22 gradually applies the first driving voltage to 5V to the first grid G1 and the second grid G2 in 101 μs. It can be seen from Figure 11 that at 104.5 μs, the first driving voltage applied by the first gate G1 and the second gate G2 starts to be greater than 2V, that is, the first gate G1 (greater than 2V) and the first electrode D1 (0V) The voltage difference is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor, the enhanced bidirectional GaN high electron mobility transistor is turned on, the second gate G1 (greater than 2V) and the source S (0V ) is greater than the threshold voltage 2V of the NMOSFET, the NMOSFET is turned on, and the external node V _USB begins to have a voltage.

In the rising stage, between 104.5 μs and 105 μs, after the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are both turned on, the voltage at the external node V _USB rises from 0V to 20V. Of course, the voltage at the reference point R2 will also rise from 0V to 20V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output third driving voltage and the collected voltage of the reference point R2 is maintained at a third difference of 5V in real time. Therefore, when the voltage at the reference point R2 also rises from 0V to 20V, the third driving voltage output from the control terminal C of the driving module 22 will gradually rise to 25V accordingly.

In the conduction maintenance stage, after 110 μs, the voltages at the external node V _USB and the reference point R2 are both maintained at 20V, and the third driving voltage output by the control terminal C of the driving module 22 is also maintained at 25V. In this way, the first gate The voltage difference between G1 (25V) and the first pole D1 (20V) is kept at 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor. The second gate G2 (25V) and the source S (20V) The voltage difference is kept at 5V, which is greater than the threshold voltage of the NMOSFET 2V. During the charging process, the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the on state to ensure the normal charging.

Fig. 12 is a simulation diagram of the reverse shutdown provided by this embodiment, combined with Fig. 3, Fig. 8 and Fig. 12, when the charging is completed; or, encountering an excessive voltage during the charging process will cause damage to the mobile phone 100, etc. In abnormal situations, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor and NMOSFET from the on state to the off state.

In the conduction phase, that is, before 310μs in Figure 12, both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned on, the external node V _USB , the internal node V _BUS , the second pole D2, the source S, and the drain The voltages of D3 and the reference point R2 are both charging voltages of 20V. The voltages of the first grid G1 and the second grid G2 are 25V.

In the turn-off phase, in order to turn off the enhanced bi-directional GaN high electron mobility transistor and the NMOSFET, the drive module 22 will collect the voltage of the reference point R2 in real time (same as the voltage at the second pole D2) and perform the operation based on the reference point R2. operation, so that the voltage difference between the output fourth driving voltage and the collected reference point R2 is kept at the fourth difference 0V in real time. Therefore, at 310 μs, the fourth driving voltage output by the driving module 22 gradually drops to 20V. It can be seen from Figure 12 that at 310.7 μs, the fourth driving voltage applied by the first gate G1 and the second gate G2 drops to 21.5V, that is, the first gate G1 (21.5V) and the first pole D1 (20V) The voltage difference is equal to the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the voltage difference between the second gate G1 (21.5V) and the source S (20V) is less than the threshold voltage 2V of the NMOSFET. The bidirectional GaN high electron mobility transistor and the NMOSFET start to turn off, and the voltage at the internal node V _BUS starts to drop from 20V.

In the falling stage, between 310.7 μs and 350 μs, because the enhanced bidirectional GaN high electron mobility transistor and NMOSFET cannot be completely turned off at once when they are turned off. Therefore, the voltage at the internal node V _BUS gradually drops from 20V to 0V. Of course, the voltage at the reference point R2 gradually drops from 20V to 0V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output fourth driving voltage and the collected voltage of the reference point R2 remains at the fourth difference 0V in real time. Therefore, when the voltage at the reference point R2 gradually drops from 20V to 0V, the fourth driving voltage output from the control terminal C of the driving module 22 will gradually drop to 0V accordingly.

In the off-holding stage, after 350 μs, the voltages at the internal node V _BUS and the reference point R2 are both kept at 0V, and the fourth driving voltage output by the control terminal C of the driving module 22 is also kept at 0V. In this way, the first gate The voltage difference between G1 (0V) and the first pole D1 (0V) is kept at 0V, which is less than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, the second gate G2 (0V) and the source S The voltage difference (0V) is kept at 0V, that is, less than the threshold voltage of the NMOSFET 2V, so that the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in an off state. A complete turn-off of the enhancement-mode bidirectional GaN high electron mobility transistor is achieved.

In another example, referring to FIG. 13 , the difference from the previous example is the setting position of the second switch module 23 . Specifically, the drain D3 of the second switch module 23 is respectively coupled to the second pole D2 of the first switch module 21 and the internal node V _BUS , the source S of the second switch module 23 is coupled to the reference point R2, and the second switch module The second gate G2 of 23 is coupled to the first gate G1 of the first switch module 21 .

Since the second switch module 23 is not located on the charging path, the second switch module 23 can be, for example, a low-power MOSFET, such as a low-power Si NMOSFET. Exemplarily, the on-resistance range of the second switch module 22 is greater than or equal to 1 ohm and less than or equal to 100 ohms; the withstand voltage range of the second switch module 22 from the gate to the source is greater than or equal to 5V, and Less than or equal to 60V; the range of drain-source breakdown voltage is greater than or equal to 10V and less than or equal to 120V. In this way, in addition to the beneficial effects of the above example, the switch circuit 20 of this embodiment can further reduce the on-resistance because the second switch module 23 can be a low-power MOSFET. It has been verified that the switch circuit 20 of this embodiment can reduce the on-resistance by more than 40%. In this way, switching loss can be further reduced, power consumption can be reduced, and heat generation can be relieved.

Furthermore, as in the above example, referring to FIG. 13 , the switch circuit 20 may include a resistor 24 . Wherein, one end of the resistor 24 is coupled to the reference point R2, and the other end of the resistor 24 is grounded. In other optional embodiments, referring to FIG. 14 , the reference end R1 of the driving module 22 may also be set to be grounded.

The specific principles of the switch circuit 20 shown in FIG. 13 to realize the bidirectional turn-on and turn-off functions will be introduced below in combination with electronic devices. Wherein, the second switch module 23 is an NMOSFET, and the threshold voltage of the NMOSFET is 2V as an example for description.

FIG. 16 is a simulation diagram of forward charging provided in this embodiment. In combination with FIG. 2, FIG. 15 and FIG. 16, when the external device connected to the external interface 10 is the charger 200, that is, the charger 200 needs to charge the mobile phone 100 When , that is, when the charging voltage received by the external node V _USB needs to be transmitted to the internal node V _BUS , it is necessary to turn the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET from the off state to the on state.

Turn-off stage, that is, before 100μs in Figure 16, the enhanced bidirectional GaN high electron mobility transistor and NMOSFET are both turned off, and the voltage at the external node V _USB is the charging voltage 20V. At this time, the internal node V _BUS is 0V , the first gate G1 and the second gate G2 are also 0V, and the voltages of the reference point R2, the second pole D2 and the source S are the same as the internal node V _BUS .

In the turn-on phase, in order to turn on the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform the operation based on the reference point R2. The operation is performed so that the voltage difference between the output first driving voltage and the collected reference point R2 is maintained at the first difference of 5V in real time. Therefore, when the voltage collected by the driving module 22 at the reference point R2 is 0V, the driving module 22 gradually applies the first driving voltage to 5V to the first grid G1 and the second grid G2 in 100 μs. It can be seen from Fig. 16 that at 100.8 μs, the first driving voltage applied by the first gate G1 and the second gate G2 starts to be greater than 2V, that is, the voltage of the first gate G1 (greater than 2V) and the second pole D2 (0V) The voltage difference is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor, the enhanced bidirectional GaN high electron mobility transistor is turned on, the second gate G1 (greater than 2V) and the source S (0V ) is greater than the threshold voltage 2V of the NMOSFET, the NMOSFET is turned on, and the internal node V _BUS begins to have a voltage.

In the rising stage, between 100.8 μs and 102 μs, after the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are both turned on, the voltage at the internal node V _BUS rises from 0V to 20V. Of course, the voltage at the reference point R2 will also rise from 0V to 20V. Since the drive module 22 collects the voltage at the reference point R2 in real time (the same as the voltage at the second pole D2) and performs calculations based on the reference point R2, the voltage difference between the first output driving voltage and the collected reference point R2 is real-time Keep at the first difference 5V. Therefore, when the voltage at the reference point R2 also rises from 0V to 20V, the first driving voltage output from the control terminal C of the driving module 22 will gradually rise to 25V accordingly.

In the conduction maintenance stage, after 102 μs, the voltages at the internal node V _BUS and the reference point R2 are both maintained at 20V, and the first driving voltage output by the control terminal C of the driving module 22 is also maintained at 25V. In this way, the first gate The voltage difference between G1 (25V) and the second pole D2 (20V) is kept at 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor. The second gate G2 (25V) and the source S (20V) The voltage difference is kept at 5V, which is greater than the threshold voltage of the NMOSFET 2V. During the charging process, the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the on state. The charging voltage 20V of the external node V _USB is transmitted to the internal node V _BUS through the conduction-enhanced bidirectional GaN high electron mobility transistor, so as to be transmitted to the charging conversion chip 30 through the internal node V _BUS . The charging conversion chip 30 converts the charging voltage, and transmits the converted voltage to the battery 40 , so as to charge the battery 40 . In addition, the converted voltage is transmitted to the system on chip (SoC chip) 50 to provide power for the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 to ensure the normal operation of the CPU, GPU and Modem.

Fig. 17 is the simulation diagram of the forward shutdown provided by this embodiment, combined with Fig. 2, Fig. 15 and Fig. 17, when the charging is completed; or, the mobile phone 100 will be damaged if it encounters an excessive voltage during the charging process, etc. In abnormal situations, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor and NMOSFET from the on state to the off state.

In the conduction phase, that is, before 302μs in Figure 17, both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned on, the external node V _USB , the internal node V _BUS , the second pole D2, the source S, and the drain The voltages of D3 and the reference point R2 are both charging voltages of 20V. The voltages of the first grid G1 and the second grid G2 are 25V.

In the turn-off phase, in order to turn off the enhanced bi-directional GaN high electron mobility transistor and the NMOSFET, the drive module 22 will collect the voltage of the reference point R2 in real time (same as the voltage at the second pole D2) and perform the operation based on the reference point R2. operation, so that the voltage difference between the output second driving voltage and the collected reference point R2 is kept at the second difference 0V in real time. Therefore, at 302 μs, the second driving voltage output by the driving module 22 gradually drops to 20V. It can be seen from Figure 17 that at 303 μs, the second driving voltage applied by the first gate G1 and the second gate G2 drops to 21.5V, that is, the voltage of the first gate G1 (21.5V) and the second gate D2 (20V). The voltage difference is equal to the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the voltage difference between the second gate G1 (21.5V) and the source S (20V) is less than the threshold voltage 2V of the NMOSFET. The bidirectional GaN high electron mobility transistor and the NMOSFET start to turn off, and the voltage at the internal node V _BUS starts to drop.

In the falling stage, between 303 μs and 305 μs, because the enhanced bidirectional GaN high electron mobility transistor and NMOSFET cannot be completely turned off at once when they are turned off. Therefore, the voltage at the internal node V _BUS gradually drops from 20V to 0V. Of course, the voltage at the reference point R2 gradually drops from 20V to 0V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output second driving voltage and the collected voltage of the reference point R2 is kept at the second difference 0V in real time. Therefore, when the voltage at the reference point R2 gradually drops from 20V to 0V, the second driving voltage output from the control terminal C of the driving module 22 will gradually drop to 0V accordingly.

In the off-holding stage, after 305 μs, the voltages at the internal node V _BUS and the reference point R2 are both kept at 0V, and the second driving voltage output by the control terminal C of the driving module 22 is also kept at 0V, so that the first gate The voltage difference between G1 (0V) and the second pole D2 (0V) is kept at 0V, which is less than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, the second gate G2 (0V) and the source S The voltage difference (0V) is kept at 0V, that is, less than the threshold voltage of the NMOSFET 2V, so that the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in an off state. The charging voltage output by the charger 200 cannot be transmitted to the charging conversion chip 30 . The charging conversion chip 30 cannot supply power to the battery 40 and the CPU, GPU and Modem integrated in the system on chip (SoC chip) 50 .

Fig. 18 is a simulation diagram during reverse charging provided by this embodiment. In combination with Fig. 3, Fig. 15 and Fig. 18, when the external device connected to the external interface 10 is the mobile phone 300 to be charged, that is, the mobile phone 100 needs to be a mobile phone to be charged When the 300 is charging, that is, when the charging voltage received by the internal node V _BUS needs to be transmitted to the external node V _USB , it is necessary to turn the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET from the off state to the on state.

In the turn-off phase, before 100.4μs in Figure 18, both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned off, and the voltage at the internal node V _BUS is the charging voltage 20V. At this time, the external node V _USB is 0V, the first gate G1 and the second gate G2 are also 0V, and the voltages of the reference point R2, the second pole D2 and the source S are the same as the external node V _USB .

In the turn-on phase, in order to turn on the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET, the driving module 22 will collect the voltage of the reference point R2 (same as the voltage at the second pole D2) in real time and perform the operation based on the reference point R2. operation, so that the voltage difference between the output third driving voltage and the collected reference point R2 is kept at the third difference 5V in real time. Therefore, when the voltage at the reference point R2 collected by the driving module 22 is 0V, the driving module 22 gradually applies the first driving voltage to 5V to the first grid G1 and the second grid G2 in 100.4 μs. It can be seen from Figure 18 that at 100.48 μs, the first driving voltage applied by the first gate G1 and the second gate G2 starts to be greater than 2V, that is, the first gate G1 (greater than 2V) and the first electrode D1 (0V) The voltage difference is greater than the threshold voltage 1.5V of the enhanced bidirectional GaN high electron mobility transistor, the enhanced bidirectional GaN high electron mobility transistor is turned on, the second gate G1 (greater than 2V) and the source S (0V ) is greater than the threshold voltage 2V of the NMOSFET, the NMOSFET is turned on, and the external node V _USB begins to have a voltage.

In the rising phase, between 100.48 μs and 101 μs, after the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are both turned on, the voltage at the external node V _USB rises from 0V to 20V. Of course, the voltage at the reference point R2 will also rise from 0V to 20V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output third driving voltage and the collected voltage of the reference point R2 is maintained at a third difference of 5V in real time. Therefore, when the voltage at the reference point R2 also rises from 0V to 20V, the third driving voltage output from the control terminal C of the driving module 22 will gradually rise to 25V accordingly.

In the conduction maintenance stage, after 101 μs, the voltages at the external node V _USB and the reference point R2 are both maintained at 20V, and the third driving voltage output by the control terminal C of the driving module 22 is also maintained at 25V. In this way, the first gate The voltage difference between G1 (25V) and the first pole D1 (20V) is kept at 5V, which is greater than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor. The second gate G2 (25V) and the source S (20V) The voltage difference is kept at 5V, which is greater than the threshold voltage of the NMOSFET 2V. During the charging process, the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the on state to ensure the normal charging.

Fig. 19 is a simulation diagram of the reverse shutdown provided by this embodiment. Combining Fig. 3, Fig. 15 and Fig. 19, when the charging is completed; or, encountering an excessive voltage during the charging process will cause damage to the mobile phone 100, etc. In abnormal situations, it is necessary to change the enhanced bidirectional GaN high electron mobility transistor and NMOSFET from the on state to the off state.

In the conduction phase, that is, before 301 μs in Fig. 12, both the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are turned on, the external node V _USB , the internal node V _BUS , the second pole D2, the source S, and the drain The voltages of D3 and the reference point R2 are both charging voltages of 20V. The voltages of the first grid G1 and the second grid G2 are 25V.

In the turn-off phase, in order to turn off the enhanced bi-directional GaN high electron mobility transistor and the NMOSFET, the drive module 22 will collect the voltage of the reference point R2 in real time (same as the voltage at the second pole D2) and perform the operation based on the reference point R2. operation, so that the voltage difference between the output fourth driving voltage and the collected reference point R2 is kept at the fourth difference 0V in real time. Therefore, at 301 μs, the fourth driving voltage output by the driving module 22 gradually drops to 20V. It can be seen from Figure 12 that at 302 μs, the fourth driving voltage applied by the first gate G1 and the second gate G2 drops to 21.5V, that is, the voltage of the first gate G1 (21.5V) and the first pole D1 (20V). The voltage difference is equal to the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, and the voltage difference between the second gate G1 (21.5V) and the source S (20V) is less than the threshold voltage 2V of the NMOSFET. The bidirectional GaN high electron mobility transistor and the NMOSFET start to turn off, and the voltage at the internal node V _BUS starts to drop from 20V.

In the falling phase, between 302μs and 309.6μs, because the enhanced bidirectional GaN high electron mobility transistor and NMOSFET cannot be completely turned off at once when they are turned off. Therefore, the voltage at the internal node V _BUS gradually drops from 20V to 0V. Of course, the voltage at the reference point R2 gradually drops from 20V to 0V. Since the driving module 22 collects the voltage of the reference point R2 in real time and performs calculations based on the reference point R2, the difference between the output fourth driving voltage and the collected voltage of the reference point R2 remains at the fourth difference 0V in real time. Therefore, when the voltage at the reference point R2 gradually drops from 20V to 0V, the fourth driving voltage output from the control terminal C of the driving module 22 will gradually drop to 0V accordingly.

In the off-holding stage, after 309.6 μs, the voltages at the internal node V _BUS and the reference point R2 are both kept at 0V, and the fourth driving voltage output by the control terminal C of the driving module 22 is also kept at 0V, so that the first gate The voltage difference between the pole G1 (0V) and the first pole D1 (0V) is kept at 0V, which is less than the threshold voltage 1.5V of the enhanced bidirectional gallium nitride high electron mobility transistor, the second gate G2 (0V) and the source The voltage difference of S(0V) is kept at 0V, which is less than the threshold voltage of the NMOSFET 2V, so that the enhanced bidirectional GaN high electron mobility transistor and the NMOSFET are always in the off state. A complete turn-off of the enhancement-mode bidirectional GaN high electron mobility transistor is achieved.

As mentioned above, the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still understand the foregoing The technical solutions described in each embodiment are modified, or some of the technical features are replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the various embodiments of the application.

Claims

A switch circuit, characterized by comprising: an external node, an internal node, a first switch module and a drive module;

The first switch module includes an enhanced gallium nitride high electron mobility transistor, and the enhanced gallium nitride high electron mobility transistor includes a first gate, a first pole and a second pole; the driving module includes a control end;

The first gate is coupled to the control terminal, the first pole is coupled to the external node, and the internal node is coupled to the second pole;

The external node is used to receive a charging voltage and transmit the charging voltage to the enhanced gallium nitride high electron mobility transistor; the driving module is used to control the enhanced gallium nitride high electron mobility transistor Turning on or off, when the enhanced gallium nitride high electron mobility transistor is turned on, the charging voltage is transmitted to the internal node, so as to be transmitted to the charging conversion chip through the internal node;

or,

The internal node is used to receive a charging voltage and transmit the charging voltage to the enhanced gallium nitride high electron mobility transistor; the driving module is used to control the enhanced gallium nitride high electron mobility transistor On or off, when the enhanced GaN high electron mobility transistor is turned on, the charging voltage is transmitted to the external node, so as to be transmitted to the electronic device to be charged through the external node.
The switch circuit according to claim 1, wherein the driving module further comprises a reference terminal, and the second pole and the reference terminal are coupled to a reference point;

When the external node receives the charging voltage, the driving module sends a first driving voltage to the first gate based on the voltage of the reference point, and the enhanced gallium nitride high electron mobility transistor responds to The first driving voltage is turned on and transmits the charging voltage to the internal node; the driving module also sends a second driving voltage to the first gate based on the voltage of the reference point, and the enhanced The GaN-type high electron mobility transistor is turned off in response to the second driving voltage;

or,

When the internal node receives the charging voltage, the driving module sends a third driving voltage to the first gate based on the voltage of the reference point, and the enhanced GaN high electron mobility transistor responds to The third driving voltage is turned on, and transmits the charging voltage to the external node; the driving module also sends a fourth driving voltage to the first gate, and the enhanced gallium nitride high electron mobility The rate transistor is turned off in response to the fourth driving voltage.
The switch circuit according to claim 2, further comprising a second switch module, the second switch module is used to prevent the an internal node transmits the received charging voltage to said reference point;

The driving module sends a fourth driving voltage to the first gate based on the voltage of the reference point, and the enhancement mode gallium nitride high electron mobility transistor is turned off in response to the fourth driving voltage.
The switch circuit according to claim 3, wherein the second switch module comprises an N-type metal-oxide-semiconductor field-effect transistor; the N-type metal-oxide-semiconductor field-effect transistor comprises a second gate, a source and a drain; the source is coupled to the second electrode, and the drain is coupled to the internal node.
The switch circuit according to claim 3, wherein the second switch module comprises an N-type metal-oxide-semiconductor field-effect transistor; the N-type metal-oxide-semiconductor field-effect transistor comprises a second gate, a source and a drain; the drain is respectively coupled to the second electrode and the internal node, and the source is coupled to the reference point.
The switch circuit according to claim 5, characterized in that, the range of on-resistance of the N-type Metal Oxide Semiconductor Field Effect Transistor is greater than or equal to 1 ohm and less than or equal to 100 ohms; the N-type metal The withstand voltage range from the second gate to the source of the oxide semiconductor field effect transistor is greater than or equal to 5V and less than or equal to 60V; the range of the drain-source breakdown voltage of the N-type metal oxide semiconductor field effect transistor is greater than Or equal to 10V, and less than or equal to 120V.
The switch circuit according to claim 4 or 5, wherein the first gate is coupled to the second gate.
The switch circuit according to claim 2, further comprising a resistor; a first end of the resistor is coupled to the reference point, and a second end of the resistor is grounded.
The switch circuit according to claim 8, wherein the resistance of the resistor is greater than 100 kilohms.
The switch circuit according to claim 1, wherein the enhanced GaN high electron mobility transistor comprises an enhanced bidirectional GaN high electron mobility transistor.
An electronic device, characterized by comprising the switch circuit according to any one of claims 1-10.