WO2023063280A1

WO2023063280A1 - Film underfill material, resin composition for film underfill material, method for manufacturing semiconductor chip with resin composition layer using film underfill material, method for manufacturing substrate for mounting semiconductor chip with resin composition layer, and method for manufacturing semiconductor device

Info

Publication number: WO2023063280A1
Application number: PCT/JP2022/037762
Authority: WO
Inventors: 源希杉山; 孝幸亀井; 勝利猪原; 健太郎高野; 剛木田
Original assignee: 三菱瓦斯化学株式会社
Priority date: 2021-10-15
Filing date: 2022-10-11
Publication date: 2023-04-20
Also published as: TW202334294A

Abstract

This film underfill material includes a resin composition layer including a thermosetting resin (A) and a visible light-absorbing agent (B), and a base film. The light transmittance of the film underfill material at a wavelength of 600 nm is 20-90%, and the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film underfill material at a wavelength of 600 nm is 2-80%.

Description

A film-like underfill material, a resin composition for a film-like underfill material, a method for producing a semiconductor chip with a resin composition layer using the film-like underfill material, and a substrate for mounting a semiconductor chip with a resin composition layer Manufacturing method and semiconductor device manufacturing method

The present invention relates to an underfill material and a resin composition, and more specifically, a semiconductor chip with a resin composition layer, a substrate for mounting a semiconductor chip with a resin composition layer, and a film-like underfill material that can be used for a semiconductor device. And, a resin composition for a film-like underfill material, a method for manufacturing a semiconductor chip with a resin composition layer using the film-like underfill material, a method for manufacturing a substrate for mounting a semiconductor chip with a resin composition layer, and a semiconductor It relates to a method of manufacturing an apparatus.

Conventionally, semiconductor chips (hereinafter sometimes abbreviated as "chips") have been used as semiconductor chip mounting substrates (hereinafter sometimes abbreviated as "substrates") as semiconductor devices have become smaller and more sophisticated. As a mounting method, flip-chip mounting has attracted attention. In flip-chip mounting, after bonding a chip and a substrate, the gap between the chip and the substrate is filled with an underfill material, which is then hardened. There is also a method of filling a chip or a substrate with an underfill material (also referred to as a pre-applied underfill material) and then bonding the chip, the underfill material, and the substrate.

　In recent years, as an underfill material, demand for film-like underfill materials has been increasing for applications such as pre-applied underfill materials. Such a film-like underfill material includes, for example, an underfill material using a radically polymerizable monomer as the main resin, a resin having transparency and undergoing a cross-linking reaction, a compound having flux activity, an inorganic filler, and the like. (For example, see Patent Documents 1 and 2 below).

Japanese Patent Publication No. 2015-503220 Japanese Patent Application Laid-Open No. 2009-239128

A semiconductor chip or the like is provided with a positioning mark, also called an alignment mark, on its surface, and the mark is recognized by a camera or the like for positioning, and then mounted on a substrate or the like. Since the recognizability of such alignment marks also affects the yield rate and the like in the production of semiconductor chips with resin composition layers, etc., the recognition rate of alignment marks has been improved in recent years, as in the invention described in Patent Document 2. Techniques to improve it are being considered.

On the other hand, increasing the light transmittance of the resin composition layer is conceivable in order to improve the recognizability of the alignment mark. However, as a result of increasing the light transmittance of the resin composition layer, the light transmittance of the resin composition becomes too high, or the light transmittance of the resin composition layer and the light transmittance of the base film used for the underfill material If the difference between is small, it becomes difficult to visually determine whether the resin composition layer is present on the front or back of the base film, and the handling of the NCF and the work efficiency during NCF placement are significantly reduced.
From the above, there is a demand for the development of a film-like underfill material that is excellent in handleability and allows easy and accurate mounting of a semiconductor chip with a resin composition layer.

In order to solve the above-described problems, the present invention provides a film-like underfill material that can be easily and accurately mounted on an object laminated with a resin composition layer, and a film-like underfill material used for producing the film-like underfill material. Resin composition for underfill material, method for producing semiconductor chip with resin composition layer using film-like underfill material, method for producing substrate for mounting semiconductor chip with resin composition layer, and method for producing semiconductor device intended to provide

As a result of intensive studies aimed at solving the problems of the prior art, the present inventors have found that a specific resin composition can solve the problems, and have completed the present invention.

That is, the present invention includes the following contents.
<1>
a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B);
A film-like underfill material comprising a base film,
The film-like underfill material has a light transmittance of 20 to 90% at a wavelength of 600 nm, and
A film-like underfill material, wherein the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film-like underfill material at a wavelength of 600 nm is 2 to 80%.
<2>
The film-like underfill material according to <1>, wherein the thickness of the resin composition layer is in the range of 5 to 500 μm.
<3>
The film-like underfill material according to <1> or <2>, wherein the visible light absorber (B) is at least one selected from the group consisting of organic dyes, organic pigments, and combinations thereof.
<4>
The visible light absorber (B) is a quinone-based, aminoketone-based, cationic, cyanine-based, phthalocyanine-based, quinacdrine-based, diaryl/triarylmethane-based, fulgide, azo-based, squarylium-based, oxonol-based, benzylidene-based, nitro system, nitroso-based, thiazole-based, indigoid-based, and at least one compound selected from the group of combinations thereof, according to any one of <1> to <3> Film type underfill material.
<5>
The film according to any one of <1> to <4>, wherein the visible light absorber (B) contains at least one compound selected from the group consisting of quinones, aminoketones, and combinations thereof. shaped underfill material.
<6>
The film form according to any one of <1> to <5>, wherein the thermosetting resin (A) contains at least one selected from the group consisting of a maleimide compound, a citraconimide compound, and a combination thereof. underfill material.
<7>
The maleimide compound includes 2,2′-bis{4-(4-maleimidophenoxy)phenyl}propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis( maleimide) hexane, N,N'-1,3-phenylenedimaleimide, N,N'-1,4-phenylenedimaleimide, N-phenylmaleimide, a maleimide compound represented by the following formula (3), the following formula ( A bismaleimide compound containing a structural unit represented by 4) and maleimide groups at both ends, a maleimide compound represented by the following formula (5), a maleimide compound represented by the following formula (6), and a following formula (7) ), and at least one selected from the group consisting of combinations thereof, the film-like underfill material according to <6>.

(In formula (3), ⁿ³ represents an integer of 1 to 30.)

(In formula (4), R ¹¹ represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R ¹² represents a carbon number A linear or branched alkylene group of 1 to 16, or a linear or branched alkenylene group of 2 to 16 carbon atoms, wherein each R ¹³ is independently a hydrogen atom or a represents a linear or branched alkyl group, or a linear or branched alkenyl group having 2 to 16 carbon atoms, n ⁵ represents an integer of 1 to 10.)

(In formula (5), each R ₈ independently represents a hydrogen atom, a methyl group, or an ethyl group. Each R ₉ independently represents a hydrogen atom or a methyl group.)

(In formula (6), each R ¹⁰ independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. n ⁴ represents an integer of 1 to 10.)

(In formula (7), each R ¹⁰ independently represents a hydrogen atom or a methyl group, and n ² represents an integer of 1 or more.)
<8>
The maleimide compound is 2,2′-bis{4-(4-maleimidophenoxy)phenyl}propane, the maleimide compound represented by the formula (3), the structural unit represented by the formula (4) and both ends a bismaleimide compound containing a maleimide group in, a maleimide compound represented by the above formula (5), a maleimide compound represented by the above formula (6), a maleimide compound represented by the above formula (7), and these The film-like underfill material according to <7> above, including at least one selected from the group of combinations.
<9>
The film-like underfill material according to any one of <1> to <8>, further comprising an inorganic filler (C).
<10>
The film-like underfill material according to <9> above, wherein the inorganic filler (C) has an average particle size of 400 nm or less.
<11>
<9, wherein the inorganic filler (C) contains at least one selected from the group consisting of silica, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof. > or the film-like underfill material according to <10>.
<12>
Any of <9> to <11>, wherein the content of the inorganic filler (C) is 10 to 500 parts by mass with respect to the total amount of 100 parts by mass of the thermosetting resin (A) The film-like underfill material described.
<13>
The inorganic filler (C) has an average particle size of 400 nm or less,
The inorganic filler (C) contains at least one selected from the group consisting of silica, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof,
The film-like underfill material according to <9>, wherein the content of the inorganic filler (C) is 10 to 500 parts by mass with respect to the total amount of 100 parts by mass of the thermosetting resin (A).
<14>
The film-like underfill material according to any one of <1> to <13>, further comprising a flux activator (D).
<15>
The film-like underfill material according to <14>, wherein the flux activator (D) contains a rosin-based resin.
<16>
The film-like underfill material according to any one of <1> to <15>, further comprising a curing catalyst (E).
<17>
The film-like underfill material according to <16> above, wherein the curing catalyst (E) contains at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof.
<18>
The film-like underfill material according to any one of <1> to <17>, further comprising a curing agent (F).
<19>
The film-like underfill material according to <18>, wherein the curing agent (F) contains an aminotriazine novolac resin.
<20>
A resin composition for a film-like underfill material containing a thermosetting resin (A) and a visible light absorbent (B).
<21>
A method for producing a semiconductor chip with a resin composition layer, using the film-like underfill material according to any one of <1> to <19>.
<22>
A method for producing a substrate for mounting a semiconductor chip with a resin composition layer, using the film-like underfill material according to any one of <1> to <19>.
<23>
A method for manufacturing a semiconductor device, using the film-like underfill material according to any one of <1> to <19>.

According to the present invention, there is provided a film-like underfill material that is excellent in handleability and can easily and accurately mount an object on which a resin composition layer is laminated, and a film-like underfill material used for producing the film-like underfill material. A method for manufacturing a semiconductor chip with a resin composition layer using a resin composition for a fill material and a film-like underfill material, a method for manufacturing a substrate for mounting a semiconductor chip with a resin composition layer, and a method for manufacturing a semiconductor device. can provide.

A mode for carrying out the present invention (hereinafter simply referred to as "this embodiment") will be described below. In addition, the following embodiment is an example for explaining the present invention, and the present invention is not limited only to this embodiment.

In the present embodiment, "(meth)acryloxy" means both "acryloxy" and its corresponding "methacryloxy", and "(meth)acrylonitrile" means "acrylonitrile" and its corresponding "methacrylonitrile". and "(meth)acrylic" means both "acrylic" and its corresponding "methacrylic", and "(meth)acrylate" means both "acrylate" and its corresponding "methacrylate". and "(meth)allyl" means both "allyl" and the corresponding "methallyl".
In addition, "~" in the present specification, unless otherwise specified, means that the numerical values at both ends are included as the upper limit and the lower limit, and the unit is the same for the upper limit and the lower limit. .

《Film type underfill material》
The film-like underfill material (hereinafter sometimes simply referred to as "underfill material") of the present embodiment comprises a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B), A film-like underfill material comprising a material film, wherein the light transmittance of the film-like underfill material at a wavelength of 600 nm is 20 to 90%, and the light transmittance of the base film at a wavelength of 600 nm The difference from the light transmittance at a wavelength of 600 nm of the film-like underfill material is 2 to 80%.

In the present embodiment, the "film-like underfill material" is a laminate containing a base film and a resin composition layer, and is an object such as a semiconductor wafer (hereinafter sometimes abbreviated as "wafer"). After lamination, the "resin composition layer" means a material that functions as a so-called underfill material that fills the gap between the chip and the substrate by peeling the base film from the resin composition layer. Moreover, a resin composition layer is a non-conductive film, and is also called Non-Conductive Film (NCF).
In addition, the resin composition layer in the present embodiment can be produced using the resin composition for a film-like underfill material of the present embodiment described below (hereinafter sometimes simply referred to as "resin composition"). .

The underfill material of this embodiment has a base film and a resin composition layer provided on the base film. For the resin composition layer, for example, a resin composition in an uncured state (A stage) can be applied to a substrate film and then semi-cured (B stage) can be used. In addition, in this embodiment, the uncured state (A stage) refers to a state in which the resin composition is not substantially cured and is not gelled. The resin composition before being applied to the substrate film is, for example, a mixture of constituent components of the resin composition (which may or may not contain a solvent), or a varnish obtained by dissolving or dispersing the mixture in a solvent. It is in an uncured state (A stage). In addition, the semi-cured state (B stage) means that each component contained in the resin composition layer has not actively started to react (cured), but the resin composition layer is in a dry state, that is, the adhesiveness. It refers to the state in which the solvent is volatilized by heating to the extent that it is not heated, and the state in which the solvent is volatilized without curing even without heating is also included.

(light transmittance)
In the underfill material of the present embodiment, the light transmittance of the film-like underfill material at a wavelength of 600 nm (hereinafter sometimes simply referred to as "light transmittance of the underfill material") is 20 to 90%. The light transmittance at a wavelength of 600 nm of the resin composition layer of the film-like underfill material can also be in the range of 20 to 90%.
Therefore, when placed on a semiconductor chip with a camera or the like, it is possible to accurately and quickly recognize the alignment marks provided on the surface of the chip or the like via the resin composition layer. As a result, when the semiconductor chip with the resin composition layer is mounted on a substrate or the like, it can be easily and accurately arranged on the object.
In addition, foreign matter may be mixed between the base film and the resin composition layer or in the resin composition during the manufacturing process of the underfill material. The presence of such foreign matter may affect the performance of the underfill material, such as film-forming properties and insulation reliability of the resin composition layer. For this reason, in order to ensure the performance of the underfill material, foreign matter inspection using a defect inspection machine or the like is often performed after the underfill material is produced. On the other hand, the foreign matter inspection is preferably performed on the underfill material as it is, that is, on the state of the laminate of the base film and the resin composition layer. In addition, foreign matter inspection by an inspection machine usually requires a certain degree of transmittance of the underfill material. Since the light transmittance of the underfill material of this embodiment is in the range of 20 to 90%, the foreign matter inspection described above can be performed.

The light transmittance of the underfill material in the present embodiment is preferably 40 to 90%, more preferably 50 to 90%, from the viewpoint of compatibility with a camera with a small amount of light and higher accuracy of the foreign matter inspection described above.

In the underfill material of the present embodiment, the light transmittance of the base film at a wavelength of 600 nm (hereinafter sometimes simply referred to as "light transmittance of the base film") is not particularly limited, but 20% to 90% is preferable, and 40% to 90% is more preferable, from the viewpoint of further increasing the accuracy of foreign matter inspection.
Similarly, although not particularly limited, the light transmittance of the resin composition layer (NCF) at a wavelength of 600 nm (hereinafter sometimes simply referred to as "light transmittance of the resin composition layer") is a small amount of light. 20 to 90% is preferable, and 40 to 90% is more preferable, from the viewpoint of compatibility with a camera and higher accuracy of the foreign matter inspection described above.

The light transmittance of the underfill material, the base film and the resin composition layer can be measured, for example, by the method described in Examples below. Specifically, numerical values measured at room temperature (25° C.) using a spectral colorimeter can be employed. again. As the light transmittance of each underfill material, base film, and NCF, for example, a sample with a width of 5 cm and a length of 5 cm is prepared, and an average value obtained by measuring arbitrary points of the sample can be adopted (for example, , mean value of 5 points, etc.).
In addition, since the underfill material of this embodiment is based on the light transmittance at each wavelength of 600 nm, it is easily available and can be widely applied to various alignment mark recognition devices such as cameras with high versatility. is.

(Difference between light transmittance of base film and light transmittance of underfill material)
The underfill material of the present embodiment contains a visible light absorber (B) in the resin composition layer, and the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the underfill material at a wavelength of 600 nm is 2 to 80%. Thus, when there is a difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the underfill material at a wavelength of 600 nm, there is a difference in light transmittance between the base film and the resin composition layer. The base film surface of the film and the resin composition layer surface of the film can be easily distinguished by visual recognition with the naked eye, that is, the visibility is excellent. As a result, it does not take time to recognize the base film surface and the resin composition layer surface, it is possible to improve the handleability of the underfill material, and it can be easily arranged on a target such as a target wafer. becomes possible. In the present embodiment, the difference between the light transmittance of the base film and the light transmittance of the underfill material is more preferably 5 to 80%, particularly preferably 10 to 80%, from the viewpoint of better visibility.

The difference between the light transmittance [T ¹ ] of the base film at a wavelength of 600 nm and the light transmittance [T ⁰ ] of the underfill material at a wavelength of 600 nm is |T ¹ −T ⁰ |, and the absolute value of these differences. is judged on the basis of

In the present embodiment, the laminated structure of the underfill material is particularly limited as long as the light transmittance of the underfill material and the difference between the light transmittance and the light transmittance of the base film satisfy the above-described relationship. For example, it may have an intermediate layer between the base film and the resin composition layer. Examples of the intermediate layer include a release layer provided on the substrate film. For example, if the base film is a film with a release layer, the release layer is peeled off together with the base film after the base film is peeled off. can be regarded as the above-mentioned "light transmittance of the base film".

<Base film>
The base film is not particularly limited, but for example, a polymer film can be used. Polymer film materials include, for example, polyester resins such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyvinyl chloride, polyvinylidene chloride, polyethylene, polypropylene, polybutene, polybutadiene, ethylene-propylene copolymer, Vinyl resins such as polymethylpentene, ethylene-vinyl acetate copolymers, and ethylene-vinyl alcohol copolymers; polyurethane resins; polyimide resins; and polyamide resins. As the base film, films containing these resins and release films obtained by applying a release agent to the surface of these films can be used. Among these, films containing one or more resins selected from polyester resins, polyimide resins, and polyamide resins, or release films obtained by applying a release agent to the surface of these films are preferable, and polyester A film containing polyethylene terephthalate, which is a type of resin, or a release film obtained by applying a release agent to the surface of a film containing polyethylene terephthalate is more preferable.

The thickness of the base film is not particularly limited, and can be adjusted as appropriate from the viewpoint of achieving the light transmittance described above. It is preferably 10 to 100 μm from the viewpoint of good stability of the coating thickness and good transportability of the underfill material.
In addition, the lower limit of the thickness of the base film is more preferably 10 μm or more, further preferably 20 μm or more, and even more preferably 25 μm or more from the viewpoint of ensuring a sufficient yield in manufacturing the underfill material. is even more preferred. The upper limit of the thickness of the base film is 100 μm, considering that the base film does not exist as a component of the semiconductor device in the end and is peeled off in the middle of the process and from the viewpoint of the manufacturing cost of the underfill material. It is preferably 80 μm or less, more preferably 50 μm or less, even more preferably 50 μm or less.

<Resin composition layer>
The resin composition layer contains a thermosetting resin (A) and a visible light absorber (B). The resin composition layer contains, if necessary, one or more selected from the group consisting of an inorganic filler (C), a flux activator (D), a curing catalyst (E), a curing agent (F), and combinations thereof. may contain In this embodiment, the resin composition layer can be formed using a film-like underfill resin composition containing at least a thermosetting resin (A) and a visible light absorber (B). Similarly, the resin composition for the film-like underfill material may also contain an inorganic filler (C), a flux activator (D), a curing catalyst (E), a curing agent (F), and a combination thereof, if necessary. It may contain one or more selected from the group consisting of:

Since the underfill material of the present embodiment is suitable for pre-applied underfill material, the resin composition layer is preferably in a semi-cured state (B stage) as described above. In the present embodiment, the minimum melt viscosity in a semi-cured state (B stage) can usually be 50,000 Pa·s or less. Also, the lower limit of the lowest melt viscosity can be, for example, 10 Pa·s or more.

In this embodiment, the minimum melt viscosity of the resin composition layer can be measured by the following method.
That is, using a laminator, a resin composition layer is laminated to obtain a resin piece having a thickness of about 0.4 to 0.6 mm. (trade name)), the minimum melt viscosity can be measured. For the measurement, a disposable parallel plate with a plate diameter of 8 mm is used, and in the range of 40 ° C. to 300 ° C., the temperature increase rate is 10 ° C./min, the frequency is 10.0 rad / sec, and the strain is 0.1%. The value obtained by measuring the minimum melt viscosity of the resin piece can be regarded as the minimum melt viscosity of the resin composition layer.

The method of forming the resin composition layer on the base film to produce the underfill material of the present embodiment is not particularly limited. As such a production method, for example, a varnish obtained by dissolving or dispersing a resin composition containing a thermosetting resin (A) and a visible light absorber (B) in an organic solvent is applied to the surface of the base film. , heating and/or drying under reduced pressure to remove the solvent and solidify the resin composition to form a resin composition layer. The drying conditions are not particularly limited, but the content ratio of the organic solvent to the resin composition layer is usually 10 parts by mass or less, preferably 5 parts by mass or less with respect to the total mass (100 parts by mass) of the resin composition layer. It is preferable to dry it as much as possible. The conditions for achieving such drying also vary depending on the type and amount of organic solvent in the varnish. For example, in the case of a varnish containing 10 to 200 parts by mass of methyl ethyl ketone with respect to 100 parts by mass of the total amount of the thermosetting resin (A), drying is performed for 2 to 15 minutes under heating conditions of 90 to 160°C under 1 atmosphere. is a guideline.

The thickness of the resin composition layer in the underfill material of the present embodiment is such that it can exhibit a light transmittance that can achieve the light transmittance of the underfill material described above. Although it varies depending on the content of 5 A range of ˜500 μm is preferred, a range of 5 to 100 μm is more preferred, and a range of 5 to 50 μm is particularly preferred.

[Thermosetting resin (A)]
The resin composition layer contains a thermosetting resin (A). As the thermosetting resin (A), any known thermosetting resin can be appropriately employed as long as it can exhibit a transmittance that can achieve the light transmittance of the above-mentioned underfill material and the like. . The type of thermosetting resin (A) is not particularly limited, but examples include maleimide compounds, citraconimide compounds, epoxy resins, oxetane resins, phenolic resins, (meth)acrylate resins, unsaturated polyester resins, diallyl. Examples include phthalate resins, and among these, it is preferable to include at least one selected from the group consisting of maleimide compounds, citraconimide compounds, and combinations thereof.
The thermosetting resin (A) preferably does not show reactivity with the flux activator (D) described below. Moreover, a thermosetting resin (A) can be used individually by 1 type or in mixture of 2 or more types.

For the thermosetting resin (A), a compound (A1) having a relatively high molecular weight and a compound (A2) having a relatively low molecular weight can be used together. For example, when compound (A1) having a relatively high molecular weight is used, the stress generated during curing shrinkage during semiconductor chip mounting or thermal curing (during post-curing) is alleviated. Further, for example, by using the compound (A2) having a relatively low molecular weight, it is possible to improve the cross-linking density during semiconductor chip mounting or post-curing.

Furthermore, the thermosetting resin (A) includes a maleimide compound (AA-1) having a weight average molecular weight of 3,000 or more and 9,500 or less, a citraconimide compound (AB -1), and at least one or more selected from the group of combinations thereof, a maleimide compound (AA-2) having a weight average molecular weight of 300 or more and less than 3,000, and a weight average molecular weight of 300 or more and less than 3,000 The citraconimide compound (AB-2) and at least one selected from the group of combinations thereof can be used in combination.
The compound (A1) preferably contains a maleimide compound (AA-1), since it provides even better low void properties and chip adhesion. In addition, the compound (A2) preferably contains a maleimide compound (AA-2), since even more excellent low void property and chip adhesiveness can be obtained.

The maleimide compound (AA-1) preferably has a weight-average molecular weight of 3,200 or more and 8,000 or less, since it provides even better low-void properties and chip adhesion. It is more preferably 300 or more and 6,000 or less.
As the citraconimide compound (AB-1), the weight average molecular weight is preferably 3,200 or more and 8,000 or less, since even more excellent low void properties and chip adhesiveness can be obtained. , 300 or more and 6,000 or less.
The weight average molecular weight of the maleimide compound (AA-2) is preferably 350 or more and 2,800 or less, preferably 400 or more and It is more preferably 500 or less.
As the citraconimide compound (AB-2), the weight average molecular weight is preferably 350 or more and 2,800 or less, and 400 or more and 2 , 500 or less.

(maleimide compound)
Compared to epoxy resins and the like, the maleimide compound is less likely to react with the flux activator during storage or heat treatment, and the flux activator is less likely to be deactivated.
The maleimide compound is not particularly limited as long as it is a resin or compound having one or more maleimide groups in the molecule. A maleimide compound can be used 1 type or in mixture of 2 or more types.
Examples of such maleimide compounds include N-phenylmaleimide, N-hydroxyphenylmaleimide, bis(4-maleimidophenyl)methane, 4,4-diphenylmethanebismaleimide, bis(3,5-dimethyl-4-maleimidephenyl ) methane, bis(3-ethyl-5-methyl-4-maleimidophenyl)methane, bis(3,5-diethyl-4-maleimidophenyl)methane, phenylmethanemaleimide, o-phenylenebismaleimide, m-phenylenebismaleimide , p-phenylenebismaleimide, 2,2-bis(4-(4-maleimidophenoxy)-phenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanebismaleimide, 4-methyl- 1,3-phenylenebismaleimide, 1,6-bismaleimide-(2,2,4-trimethyl)hexane, 4,4-diphenyletherbismaleimide, 4,4-diphenylsulfonebismaleimide, 1,3-bis(3 -maleimidophenoxy)benzene, 1,3-bis(4-maleimidophenoxy)benzene, polyphenylmethane maleimide, novolak-type maleimide compounds, biphenylaralkyl-type maleimide compounds, 2,2-bis(4-(4-maleimidophenoxy)phenyl ) propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylenedimaleimide, N,N' -1,4-phenylenedimaleimide, N-phenylmaleimide, a maleimide compound represented by the following formula (3), a bis containing a structural unit represented by the following formula (4) and maleimide groups at both ends of the molecular chain Maleimide compounds, maleimide compounds represented by the following formula (5), maleimide compounds represented by the following formula (6), maleimide compounds represented by the following formula (7), and the like. As the thermosetting resin (A), a prepolymer obtained by polymerizing a maleimide compound, a prepolymer obtained by polymerizing a maleimide compound with another compound such as an amine compound, etc. may be used. It can also be contained in the resin composition.

The maleimide compound is not particularly limited, but 2,2'-bis{4-(4-maleimidophenoxy)phenyl}propane, 1 , 2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylenedimaleimide, N,N'-1,4 -Phenylenedimaleimide, N-phenylmaleimide, a maleimide compound represented by the following formula (3), a bismaleimide compound containing a structural unit represented by the following formula (4) and maleimide groups at both ends, the following formula ( 5), a maleimide compound represented by the following formula (6), a maleimide compound represented by the following formula (7), and at least one selected from the group of combinations thereof. Preferably, further, 2,2'-bis{4-(4-maleimidophenoxy)phenyl}propane, a maleimide compound represented by the following formula (3), a structural unit represented by the following formula (4) and at both ends A bismaleimide compound containing a maleimide group, a maleimide compound represented by the following formula (5), a maleimide compound represented by the following formula (6), a maleimide compound represented by the following formula (7), and combinations thereof It is more preferable to include at least one selected from the group of

In formula (3), ⁿ³ represents an integer of 1-30.

In formula (4), R ¹¹ represents a linear or branched alkylene group having 1 to 16 carbon atoms or a linear or branched alkenylene group having 2 to 16 carbon atoms. R ¹² represents a linear or branched alkylene group having 1 to 16 carbon atoms or a linear or branched alkenylene group having 2 to 16 carbon atoms. Each R ¹³ independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. ⁿ⁵ represents an integer of 1-10.
Details of the structural unit represented by formula (4) will be described later.

In formula (5), each R ₈ independently represents a hydrogen atom, a methyl group, or an ethyl group. Each _R9 independently represents a hydrogen atom or a methyl group.

In formula (6), each R ¹⁰ independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. ⁿ⁴ represents an integer of 1-10. R ¹⁰ is preferably a hydrogen atom.

In formula (7), each R ¹⁰ independently represents a hydrogen atom or a methyl group, and n ² represents an integer of 1 or more, preferably an integer of 1-10.

Next, the structure of the bismaleimide compound containing the structural unit represented by formula (4) and maleimide groups at both ends of the molecular chain will be described.

The bismaleimide compound may have a plurality of structural units represented by formula (4), in which case R ¹¹ , R ¹² and R in the plurality of structural units represented by formula (4) ¹³ may be the same or different. Further, the bismaleimide compound differs in at least one of R ¹¹ , R ¹² , and R ¹³ in the structural unit represented by formula (4) and the number of structural units of formula (4) in the bismaleimide compound. It may be a mixture of compounds.

In the structural unit represented by formula (4) of the bismaleimide compound, R ¹¹ is a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkylene group having 2 to 16 carbon atoms. Indicates an alkenylene group. R ¹¹ is preferably a linear or branched alkylene group because the resin composition has a suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be controlled appropriately. A linear alkylene group is more preferred.

The number of carbon atoms in the alkylene group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be more suitably controlled, and 4. ~12 is more preferred.
Linear or branched alkylene groups include, for example, methylene group, ethylene group, propylene group, 2,2-dimethylpropylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group and decylene group. group, dodecylene group, undecylene group, tridecylene group, tetradecylene group, pentadecylene group, hexadecylene group, neopentylene group, dimethylbutylene group, methylhexylene group, ethylhexylene group, dimethylhexylene group, trimethylhexylene group, methylheptylene group, dimethylheptylene group, trimethylheptylene group, tetramethylheptylene group, ethylheptylene group, methyloctylene group, methylnonylene group, methyldecylene group, methyldodecylene group, methylundecylene group, methyltridecylene group, methyltetradecylene group , and methylpentadecylene groups.

The number of carbon atoms in the alkenylene group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting, and the increase in melt viscosity during mounting can be more suitably controlled. ~12 is more preferred.
Linear or branched alkenylene groups include, for example, vinylene group, 1-methylvinylene group, arylene group, propenylene group, isopropenylene group, 1-butenylene group, 2-butenylene group, 1-pentenylene group, 2 -pentenylene group, isopentylene group, cyclopentenylene group, cyclohexenylene group, dicyclopentadienylene group and the like.

In the structural unit represented by formula (4), R ¹² represents a linear or branched alkylene group having 1 to 16 carbon atoms or a linear or branched alkenylene group having 2 to 16 carbon atoms. . R ¹² is preferably a linear or branched alkylene group because the resin composition has a suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be controlled appropriately. A linear alkylene group is more preferable.

The number of carbon atoms in the alkylene group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be more suitably controlled, and 4. ~12 is more preferred.
As the linear or branched alkylene group, the above R ¹¹ can be referred to.

The number of carbon atoms in the alkenylene group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting, and the increase in melt viscosity during mounting can be more suitably controlled. ~12 is more preferred.
As the linear or branched alkenylene group, the above R ¹¹ can be referred to.

In the structural unit represented by formula (4), R ¹¹ and R ¹² may be the same or different, but from the viewpoint of easier synthesis of the bismaleimide compound, they are preferably the same. preferable.

In the structural unit represented by formula (4), each R ¹³ is independently a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkyl group having 2 to 16 carbon atoms. It represents a branched alkenyl group. Each of R ¹³ is independently a hydrogen atom or a linear chain having 1 to 16 carbon atoms, because the resin composition has a suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be suitably controlled. A linear or branched alkyl group is preferable, and among R ¹³ , 1 to 5 groups (R ¹³ ) are linear or branched alkyl groups having 1 to 16 carbon atoms, and the remaining groups ( R ¹³ ) is more preferably a hydrogen atom, and among R ¹³ , 1 to 3 groups (R ¹³ ) are linear or branched alkyl groups having 1 to 16 carbon atoms, and the remaining groups ( More preferably, R ¹³ ) is a hydrogen atom.

The number of carbon atoms in the alkyl group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be more suitably controlled, and 4. ~12 is more preferred.
Linear or branched alkyl groups include, for example, methyl group, ethyl group, n-propyl group, isopropyl group, 1-ethylpropyl group, n-butyl group, 2-butyl group, isobutyl group and tert-butyl. group, n-pentyl group, 2-pentyl group, tert-pentyl group, 2-methylbutyl group, 3-methylbutyl group, 2,2-dimethylpropyl group, n-hexyl group, 2-hexyl group, 3-hexyl group, n-heptyl, n-octyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylpentan-3-yl, and n-nonyl groups.

The number of carbon atoms in the alkenyl group is preferably 2 to 14, since the resin composition has a more suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be more suitably controlled. ~12 is more preferred.
Linear or branched alkenyl groups include, for example, vinyl group, allyl group, 4-pentenyl group, isopropenyl group, isopentenyl group, 2-heptenyl group, 2-octenyl group, and 2-nonenyl group. be done.

In the structural unit represented by formula (4), n ⁵ represents an integer of 1-10.

A bismaleimide compound has maleimide groups at both ends of its molecular chain. Both ends mean both ends in the molecular chain of the bismaleimide compound. , at the chain end of R ¹¹ , at the chain end at the N atom of the maleimide ring, or at both ends. The bismaleimide compound may have maleimide groups other than both ends of the molecular chain.
The maleimide group is represented by the following formula (8), and the N atom is bonded to the molecular chain of the bismaleimide compound. In addition, the maleimide groups bonded to the bismaleimide compound may all be the same or different, but the maleimide groups at both ends of the molecular chain are preferably the same.

In formula (8), each R ₁₁ independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. Both R ₁₁ are preferably hydrogen atoms from the viewpoint of reacting more favorably with the resin (A).
The number of carbon atoms in the alkyl group is preferably 1 to 3, more preferably 1 to 2, from the viewpoint of more preferably reacting with the resin (A).
The above R ¹³ can be referred to as the linear or branched alkyl group.

Examples of such bismaleimide compounds include maleimide compounds represented by the following formula (9). These compounds can be used singly or in combination of two or more compounds having different repeating numbers of a in formula (9).

In formula (9), a represents an integer of 1-10. a is preferably an integer of 1 to 6, since the resin composition has a more suitable viscosity during chip mounting and the increase in melt viscosity during mounting can be more suitably controlled. The maleimide compound represented by formula (9) may be a mixture of compounds in which a is different.

As the maleimide compound (AA-1), the maleimide compound represented by the above formula (3) and the structure represented by the above formula (4) can be obtained, since even more excellent low void property and chip adhesiveness can be obtained. A bismaleimide compound containing maleimide groups at both ends of the unit and the molecular chain is preferred.

As the maleimide compound (AA-2), a maleimide compound represented by the above formula (5) and a maleimide represented by the above formula (6) can be obtained, since even more excellent low void property and chip adhesiveness can be obtained. A compound is preferred.

As the maleimide compound, a commercially available product may be used. first name). As the maleimide compound represented by formula (3), for example, BMI-1000P (trade name, n ³ in formula (3) = 14 (average value), weight average molecular weight: 3 , 700), K-I Kasei Co., Ltd. BMI-650P (trade name, n ³ = 9 (average value) in formula (3)), K-I Kasei Co., Ltd. BMI-250P (product name, n ³ = 3 to 8 (average value) in formula (3)), CUA-4 manufactured by K.I Kasei Co., Ltd. (trade name, n ³ = 1 in formula (3)), etc. be done. As the bismaleimide compound containing maleimide groups at both ends of the structural unit represented by the formula (4) and the molecular chain, MIZ-001 manufactured by Nippon Kayaku Co., Ltd. (trade name, represented by the formula (9) Weight average molecular weight: 3,900) containing maleimide compounds. Examples of the maleimide compound represented by formula (5) include BMI-70 (trade name; bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane manufactured by K.I. Kasei Co., Ltd., molecular weight: 550). Examples of the maleimide compound represented by formula (6) include MIR-3000-70MT (trade name, manufactured by Nippon Kayaku Co., Ltd., where all R ¹⁰ in formula (6) are hydrogen atoms and n ⁴ is weight average molecular weight: 1,050), which is a mixture of 1 to 10. Examples of the maleimide compound represented by formula (7) include BMI-2300 (trade name) manufactured by Daiwa Kasei Kogyo Co., Ltd.

(Citraconimide compound)
The citraconimide compound is not particularly limited. -(4-citraconimidophenoxy)phenyl]propane, bis(3,5-dimethyl-4-citraconimidophenyl)methane, bis(3-ethyl-5-methyl-4-citraconimidophenyl)methane, bis(3, 5-diethyl-4-citraconimidophenyl)methane, 1,3-xylylenebis(citraconimide), N-[3-bis(trimethylsilyl)amino-1-propyl]citraconimide, N-[3-bis(triethylsilyl) amino-1-propyl]citraconimide, N-[3-bis(triphenylsilyl)amino-1-propyl]citraconimide, N,N'-(m-phenylenedimethylene)dicitraconimide, and N-[3 -(Methylidenesuccinimidemethyl)benzyl]citraconimide, a citraconimide compound represented by the following formula (10), a bis containing a structural unit represented by the above formula (4) and a citraconimide group at both ends of the molecular chain A citraconimide compound, a citraconimide compound represented by the following formula (11), and a citraconimide compound represented by the following formula (12) can be mentioned. As for the biscitraconimide compound, the above bismaleimide compound can be referred to. The details of the structure of formula (4) are as described above, and the citraconimide group has the structure of formula (8) except that at least one group of R ₁₁ is a methyl group in formula (8). can refer to. A citraconimide compound can be used 1 type or in mixture of 2 or more types.

Among the above-mentioned citraconimide compounds, the citraconimide compound represented by the following formula (10) can obtain better solubility in organic solvents and more excellent low void properties and chip adhesion. a compound, a biscitraconimide compound containing a structural unit represented by the above formula (4) and a citraconimide group at both ends of the molecular chain, a citraconimide compound represented by the following formula (11), and the following formula (12) It preferably contains a citraconimide compound represented by.

As the citraconimide compound (AB-1), a citraconimide compound represented by the following formula (10), and a citraconimide compound represented by the above formula (4), since even more excellent low void properties and chip adhesiveness can be obtained. It is preferably a biscitraconimide compound containing a structural unit and citraconimide groups at both ends of the molecular chain.

In formula (10), ⁿ⁶ represents an integer of 1-30.

As the citraconimide compound (AB-2), a citraconimide compound represented by the following formula (11) and a citraconimide compound represented by the following formula (12) can be obtained, since even better low void properties and chip adhesiveness can be obtained. is preferably a citraconimide compound.

In formula (11), each R ₈ independently represents a hydrogen atom, a methyl group, or an ethyl group. Each _R9 independently represents a hydrogen atom or a methyl group.

In formula (12), each R ¹⁰ independently represents a hydrogen atom or a methyl group, and n ⁴ represents an integer of 1 or more, preferably an integer of 1-10. R ¹⁰ is preferably a hydrogen atom.

The content (total amount) of the thermosetting resin (A) in the resin composition layer is not particularly limited. It is preferably 25 parts by mass or more, more preferably 40 parts by mass or more, and even more preferably 50 parts by mass or more with respect to 100 parts by mass. The upper limit of the content (total amount) of the thermosetting resin (A) is not particularly limited. More preferably, it is 90 parts by mass or less. The term "resin component" as used herein includes not only the thermosetting resin (A), but also the curing agent (F) and the flux activator (D) when resins are used. It is intended not to include the agent (B), the curing catalyst (E), and the like.

When the thermosetting resin (A) contains the compound (A1) and the compound (A2), even more excellent low void properties and chip adhesion are obtained, so the content of the compound (A1) is It is preferably 40 to 90 parts by mass, more preferably 42 to 85 parts by mass, and preferably 45 to 80 parts by mass with respect to a total of 100 parts by mass of (A1) and compound (A2). More preferred. The content of compound (A2) is preferably 10 to 60 parts by mass, more preferably 15 to 58 parts by mass, with respect to 100 parts by mass in total of compound (A1) and compound (A2). More preferably, it is 20 to 55 parts by mass.

When the thermosetting resin (A) contains the maleimide compound (AA-1) and the maleimide compound (AA-2), even more excellent low void property and chip adhesiveness can be obtained, so the maleimide compound (AA -1) content is preferably 40 to 90 parts by mass, preferably 42 to 85 parts by mass, with respect to the total 100 parts by mass of compound (AA-1) and compound (AA-2). is more preferable, and 45 to 80 parts by mass is even more preferable. In addition, the content of the maleimide compound (AA-2) is preferably 10 to 60 parts by mass with respect to a total of 100 parts by mass of the compound (AA-1) and the compound (AA-2), and 15 to 60 parts by mass. It is more preferably 58 parts by mass, and even more preferably 20 to 55 parts by mass.

When the thermosetting resin (A) contains the citraconimide compound (AB-1) and the citraconimide compound (AB-2), even more excellent low void properties and chip adhesion can be obtained. The content of the compound (AB-1) is preferably 40 to 90 parts by mass, preferably 42 to 85 parts by mass, with respect to the total 100 parts by mass of the compound (AB-1) and the compound (AB-2). and more preferably 45 to 80 parts by mass. Further, the content of the citraconimide compound (AB-2) is preferably 10 to 60 parts by mass with respect to a total of 100 parts by mass of the compound (AB-1) and the compound (AB-2). It is more preferably up to 58 parts by mass, and even more preferably 20 to 55 parts by mass.

[Visible light absorber (B)]
The resin composition layer contains a visible light absorbent (B). For the underfill material of the present embodiment, the type of visible light absorbent (B) contained in the resin composition layer is selected, and the content of the visible light absorbent (B) and the film thickness of the resin composition layer are adjusted. Thereby, the light transmittance of the underfill material and the resin composition layer can be set within a desired range. For example, for the purpose of adjusting the light transmittance of the resin composition layer, it is conceivable to use inorganic fine particles having a relatively large particle size such as silica having an average particle size of more than 400 nm, but inorganic fine particles having a large particle size settle during storage. The storage stability of the varnish is deteriorated. For this reason, especially when the inorganic filler (C) having an average particle size of 400 nm or less is used, adjusting the light transmittance of the resin composition layer using the visible light absorber (B) is effective for varnish storage. This is advantageous in terms of stability and the like.

The visible light absorbent (B) is not particularly limited as long as it is a material that can absorb visible light. For example, at least one selected from the group consisting of organic dyes, organic pigments, and combinations thereof can be used.

Examples of organic dyes and organic pigments include, but are not limited to, quinone, aminoketone, cationic, cyanine, phthalocyanine, quinacdrine, diaryl/triarylmethane, fulgide, azo, and squarylium. system, oxonol, benzylidene, nitro, nitroso, thiazole, indigoid, and at least one compound selected from the group consisting of combinations thereof, and thermosetting From the viewpoint of suppressing reaction with other components such as resin (A), at least one compound selected from the group consisting of quinones, aminoketones, and combinations thereof is preferred.

(organic dye)
Specific examples of organic dyes are not particularly limited, but the following azo dyes, mordant dyes, reactive dyes, and acid dyes can be exemplified. Among the following organic dyes, black dyes are preferable as the organic dye in the present embodiment from the viewpoint of a wide absorption wavelength range.
Kayaset Black AN
Direct Brilliant Pink B (CI Direct Red9)
Kayarus Light Red F5G (CI Direct Red225)
Direct Light Rose FR (CI Direct Red227)
Summit Supra Turquoise Blue G (C.I. Direct Blue86)
Direct Supra Blue FFRL (C.I. Direct Blue 108)
Kayarus Cupro Green G (CI Direct Green 59)
Direct Fast Black B (C.I. Direct Black 22)
Sunchromine Yellow MR (CI Mordant Yellow 3)
Chrome Yellow AS (CI Mordant Yellow 5)
Chrome Yellow 3R (CI Mordant Yellow 8)
Chrome Yellow PG (CI Mordant Yellow 23)
Chrome Orange FL (CI Mordant Orange29)
Chrome Red B conc. (C.I. Mordant Red7)
Chrome Red 5G (CI Mordant Red19)
Sunchromine Brilliant Violet R conc. (C.I. Mordant Violet 1:1)
Chrome Fine Violet R (C.I. Mordant Violet 1)
Chrome Cyanine BXS (C.I. Mordant Blue 1)
Mordant Blue B 120% (CI Mordant Blue 13)
Chrome Cyanine BLA (C.I. Mordant Blue29)
Mordant Green L (CI Mordant Green 17)
Chrome Green 3B-N (CI Mordant Green28)
Mordant Brown KS (C.I. Mordant Brown 15)
Chrome Brown LE (CI Mordant Brown 19)
Chrome Brown RH (CI Mordant Brown 33)
Chrome Black P2B (C.I. Mordant Black7)
Chrome Black PLW (CI Mordant Black 9)
Chrome Black ET-1 (C.I. Mordant Black 11)

Chrome Navy CR 158% (CI Mordant Black 17)
Chrome Light Gray G (C.I. Mordant Black38)
Chrome Bordeaux FB
Alizarine Chrome Brilliant Blue BL
Chrome Blue 2G
Sumifix Yellow GR 150% (CI Reactive Yellow 15)
Lanasol Yellow 4G (CI Reactive Yellow 39)
Sumifix Golden Yellow GG (A) 150% (CI Reactive Yellow76)
Kayacion Yellow E-S4R (C.I Reactive Yellow84)
Novacron Yellow P-6GS gran (CI Reactive Yellow 95)
Kayacion Yellow E-SNA (CI Reactive Yellow 102)
Kayacion Yellow E-SN4G (CI Reactive Yellow 105)
Drimarene Yellow K-2R CDG (CI Reactive Yellow 125)
Sumifix Supra Yellow 3RF 150% gran (C.I Reactive Yellow 145)
Sumifix Supra Brilliant Yellow 3GF 150% gr (C.I Reactive Yellow 167)
Novacron Yellow CR (C.I Reactive Yellow 168)
Novcron Yellow C-5G (C.I Reactive Yellow 175)
Kayacion Yellow CF-3RJ 150
Kayacion Yellow E-CM
Procion Orange PX-RN (CI Reactive Orange 5)
Remazol Brilliant Orange 3R Special (CI Reactive Orange 16)
Levafix Yellow E-3RL gran (CI Reactive Orange 30)
Levafix Orange E-3GA gran (C.I. Reactive Orange64)
Remazol Golden Yellow RNL gran 150% (CI Reactive Orange 107)
Drimaren Rubinol X3LR CDG (C.I. Reactive Red55)
Brilliant Red G SPL (C.I. Reactive Red 112)
Brilliant Red 7BF Liq 25% (C.I. Reactive Red 114)
Lanasol Red 2G (CI Reactive Red 116)
Levafix Scarlet E-2GA gran (C.I. Reactive Red124)
Levafix Brilliant Red E-4BA gran (CI Reactive Red158)

Levafix Brilliant Red E-6BA gran (CI Reactive Red159)
Remazol Brilliant Red F3B gran (C.I. Reactive Red180)
Supra Brilliant Red 3BF 150% gran (C.I. Reactive Red195)
Remazol Red RB 133% (CI Reactive Red 198)
Supra Scarlet 2GF 150G (C.I. Reactive Red222)
Novacron Red P-6B Gran. 150%
Novacron Red C-2G
Kayacion Violet A-3R (C.I. Reactive Violet 1)
Remazol Brill. Violet 5R (C.I. Reactive Violet 5)
Drimaren Violet K-2RL CDG (CI Reactive Violet 33)
Remazol Brill. Blue RN (CI Reactive Blue 19)
Sumifix Turquoise Blue G(N) conc. (C.I. Reactive Blue21)
Novacron Blue P-3R IN (C.I. Reactive Blue49)
Lanasol Blue 3R (CI Reactive Blue 50)
Drimarene Blue X-3LR CDG (C.I. Reactive Blue52)
Lanasol Blue 3G (CI Reactive Blue 69)
Novacron Turquoise P-GR 150% (CI Reactive Blue72)
Dimarene Navy X-RBL CDG (C.I. Reactive Blue79)
Lanasol Blue 8G-01 150% (CI Reactive Blue 185)
Drimarene Blue K-2RL CDG (C.I. Reactive Blue 209)
Sumifix Supra Blue BRF 150% gran. (C.I. Reactive Blue221)
Sumifix Supra Navy Blue BF gran. (C.I. Reactive Blue222)
Sumifix Supra Turquoise Blue BGF(N) (C.I. Reactive Blue231)
Novacron Blue CR (C.I. Reactive Blue235)
Kayacion Blue CF-GJ150
Kayacion Blue CF-BL
Kayacin Marine E-CM
Kayacion Navy E-CM
Sumifix Supra Navy Blue 3GF 150% gran Levafix Brown E-2R gran (C.I. Reactive Brown 19)
Novacron Brown P-6R Gran. 150
Remazol Black BN 150% (C.I. Reactive Black5)

Remazol Black RL 133% (CI Reactive Black 31)
Remazol Deep Black N 150% (CI Reactive Black 31)
Acid Quinoline Yellow WS H/C (C.I. Acid Yellow 3)
Kayacyl Yellow GG 80 (C.I. Acid Yellow 17)
Tartrazine NS conc (CI Acid Yellow 23)
Suminol Fast Yellow R conc. (C.I. Acid Yellow 25)
Kayanol Milling Yellow O (C.I. Acid Yellow 38)
Suminol Milling Yellow MR (C.I. Acid Yellow 42)
Aminyl Yellow E-3GL (C.I. Acid Yellow 49)
Suminol Fast Yellow G (B) (C.I. Acid Yellow 61)
Erionyl Yellow B-4G (C.I. Acid Yellow79)
Kayanol Yellow N5G (C.I. Acid Yellow 110)
Lanyl Yellow G ex cc (C.I. Acid Yellow 116)
Kayakalan Yellow GL 143 (C.I. Acid Yellow 121)
Kayanol Milling Yellow 5GW (CI Acid Yellow 127)
Lanacron Yellow N-2GL KWL (C.I. Acid Yellow 129)
Erionyl Golden Yellow MR-02 (C.I. Acid Yellow 151)
Tectilon Yellow 2G 200% (CI Acid Yellow 169)
Lanacron Yellow S-2G-01 KWL (C.I. Acid Yellow 220)
Telon Yellow RLN micro (C.I. Acid Yellow 230)
Tectilon Yellow 3R 200% (CI Acid Yellow 246)
Chuganol Fast Yellow 5GL (CI Acid Yellow 40:1)
Solar Orange (CI Acid Orange 7)
Solar Light Orange GX (C.I. Acid Orange 10)
Chuganol Milling Brown 5R (C.I. Acid Orange 51)
Chuganol Milling Orange SG (CI Acid Orange 56)
Kayanol Yellow N3R (C.I. Acid Orange 67)
Aminyl Yellow E-3RL (C.I. Acid Orange 67)
Lanyl Orange R 200% (CI Acid Orange 88)
Chuganol Milling Orange GSN 150% (CI Acid Orange 95)
Suminol Milling Orange GN (N) (C.I. Acid Orange 95)
Isolan Orange K-RLS (C.I. Acid Orange 107)
Telon Orange AGT 01 (C.I. Acid Orange 116)
Lanyl Orange 2R e/c (C.I. Acid Orange 120)
Supralan Orange S-RL (C.I. Acid Orange 166)
Lanasyn Yellow M-2RL 180 (C.I. Acid Orange 180)
Nylosan Orange NRL 250 (C.I. Acid Orange 250)

Lanasyn Orange M-RL p
Silk Scarlet (CI Acid Red9)
Brilliant Scarlet 3R conc. (C.I. Acid Red 18)
Acid Rhodamine G Conc (C.I. Acid Red50)
Acid Rhodamine B Conc (C.I. Acid Red52)
Chugacid Red FCH (C.I. Acid Red73)
Chugacid Rubinol 3B 200% (C.I. Acid Red80)
Rocceline NS conc. 120% (CI Acid Red88)
Chuganol Anthracene Red G (CI Acid Red97)
Suminol Fast Red G (B) (C.I. Acid Red 118)
Suminol Milling Brilliant Red 3BN (N) conc. (C.I. Acid Red 131)
Lanyl Red GG (CI Acid Red 211)
Lanyl Red B (CI Acid Red 215)
Lanasyn Bordeaux M-RLA200 (C.I. Acid Red217)
Suminol Milling Brilliant Red B conc. N (CI Acid Red 249)
Aminyl Red E-3BL (CI Acid Red257)
Telon Red M-BL (CI Acid Red260)
Chugai Aminol Fast Pink R (C.I. Acid Red289)
Nylosan Red N-2RBL SGR (C.I. Acid Red336)
Telon Red FRL micro (C.I. Acid Red337)
Lanasyn Red MG (C.I. Acid Red399)
Kayakalan Red BL
Nylosan Red EBL SGR 180
Kayanol Milling Red BW
Kayanol Milling Violet FBW (C.I. Acid Violet48)
Erionyl Red B-10B-01 (C.I. Acid Violet54)
Chugai Aminol Fast Violet F6R (CI Acid Violet 102)
Acid Pure Blue VX (C.I. Acid Blue 1)
Acid Brilliant Blue AF-N (C.I. Acid Blue7)
Chugacid Light Blue A (C.I. Acid Blue 25)
Kayanol Blue N2G (C.I. Acid Blue 40)
Nylosan Blue E-GL p 250 (C.I. Acid Blue 72)
Chuganol Blue 6B 333% (C.I. Acid Blue 83)
Chuganol Blue G 333% (C.I. Acid Blue90)
Kayanol Navy Blue R (C.I. Acid Blue 92)

Suminol Milling Brilliant Sky Blue SE (N) (C.I. Acid Blue 112)
Suminol Milling Cyanine 5R (N) (C.I. Acid Blue 113)
Kayanol Milling Blue GW (C.I. Acid Blue 127)
Lanyl Brilliant Blue G ex cc (C.I. Acid Blue 127:1)
Kayanol Blue NR (C.I. Acid Blue 129)
Kayanol Milling Blue BW (C.I. Acid Blue 138)
Kayanol Milling Blue 2RW (C.I. Acid Blue 140)
Lanyl Blue 3G ex conc (C.I. Acid Blue 171)
Nylosan Blue N-GL 150 (C.I. Acid Blue 230)
Tectilon Blue 6G 200% (C.I. Acid Blue 258)
Telon Blue AFN (CI Acid Blue 264)
Tectilon Blue 4R-01 200% (C.I. Acid Blue 277:1)
Nylosan B Blue N-FL SGR180 (C.I. Acid Blue278)
Nylosan Blue N-5GL SGR 200 (C.I. Acid Blue 280)
Kayalax Navy R (C.I. Acid Blue 300)
Nylosan Blue N-BLN (C.I. Acid Blue 350)
Lanacron Blue N-3GL
Acid Green V (CI Acid Green 16)
Chuganol Cyanine Green G (CI Acid Green 25)

The content of the visible light absorber (B) in the resin composition layer is appropriately adjusted according to the type thereof in order to adjust the transmittance described above, so the content is not limited. , For example, from the viewpoint of insulation reliability, film durability, etc., it is preferably 0.01 to 10 parts by mass, and 0.05 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin (A) parts is more preferable, and 0.05 to 2 parts by mass is even more preferable.

[Inorganic filler (C)]
The resin composition layer preferably further contains an inorganic filler (C) in order to improve flame resistance, improve thermal conductivity, and reduce the coefficient of thermal expansion. By using the inorganic filler (C), the flame resistance and thermal conductivity of the underfill material can be improved, and the coefficient of thermal expansion can be reduced.

The average particle size of the inorganic filler (C) is not particularly limited. From the standpoint of improving the , and coping with narrower pitches of electrodes arranged on a chip and narrower gaps between electrodes, the thickness is preferably 400 nm or less, more preferably 300 nm or less, and particularly preferably 1 to 100 nm.
In addition, in this embodiment, the "average particle size" of the inorganic filler (C) shall mean the median size of the inorganic filler (C). Here, the median diameter is the volume of particles on the larger particle diameter side and the volume of particles on the smaller particle diameter side when the particle size distribution of powder is divided into two based on a certain particle size. means a particle size such that each accounts for 50% of the total powder. The average particle size (median size) of the inorganic filler (C) is measured by a wet laser diffraction/scattering method.

Examples of the inorganic filler (C) include, but are not limited to, silica such as natural silica, fused silica, amorphous silica, and hollow silica; aluminum compounds such as boehmite, aluminum hydroxide, alumina, and aluminum nitride; magnesium oxide; Calcium compounds such as calcium carbonate and calcium sulfate; Molybdenum compounds such as molybdenum oxide and zinc molybdate; Boron nitride; Barium sulfate; Talc such as natural talc and calcined talc; glass such as short fiber glass, spherical glass, and fine powder glass (eg, E glass, T glass, D glass); In addition, when it is desired to impart electrical conductivity or anisotropic electrical conductivity to the resin composition layer, metal particles of gold, silver, nickel, copper, tin alloys, and palladium, for example, are used as the inorganic filler (C). may

Among these, the inorganic filler (C) includes silica, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, and magnesium oxide from the viewpoint of improving the flame resistance of the resin composition layer and reducing the coefficient of thermal expansion. , magnesium hydroxide and combinations thereof, preferably at least one selected from the group consisting of silica, alumina, and boron nitride, more preferably containing at least one selected from the group consisting of silica, alumina, and boron nitride. is more preferred. Examples of silica include SFP-120MC (trade name) and SFP-130MC (trade name) manufactured by Denka Corporation; 0.3 μm SX-CM1 (trade name) and 0.3 μm SX- EM1 (trade name), 0.3 μm SV-EM1 (trade name), SC1050-MLQ (trade name), SC2050-MNU (trade name), SC2050-MTX (trade name), 2.2 μm SC6103-SQ (trade name), SE2053-SQ (trade name), Y50SZ-AM1 (trade name), YA050C-MJE (trade name), YA050C-MJM (trade name), YA050C-MJF (trade name), and YA050C-MJA (trade name) be done.

These inorganic fillers (C) can be used singly or in an appropriate mixture of two or more.

The inorganic filler (C) may be surface-treated with a silane coupling agent. The silane coupling agent used for surface treatment of the inorganic filler (C) is not particularly limited as long as it is a silane coupling agent generally used for surface treatment of inorganic substances. For example, vinyltrimethoxysilane and vinylsilane-based silane coupling agents such as γ-(meth)acryloxypropyltrimethoxysilane; phenylaminosilane-based silane coupling agents such as N-phenyl-3-aminopropyltrimethoxysilane; phenylsilane-based silane coupling agents such as methoxyphenylsilane; and imidazolesilane-based silane coupling agents. These silane coupling agents can be used singly or in admixture of two or more.

In the resin composition layer, the content of the inorganic filler (C) is not particularly limited, but from the viewpoint of ensuring insulation reliability and sufficient flux activity during mounting, the total amount of the thermosetting resin (A) is 100 mass. It is preferably 10 to 500 parts by mass, more preferably 25 to 400 parts by mass, even more preferably 30 to 300 parts by mass. The upper limit of the content of the inorganic filler (C) may be 250 parts by mass.

[Flux activator (D)]
The resin composition layer preferably further contains a flux activator (D) in order to exhibit flux activity in flip-chip mounting. The flux activator (D) is not particularly limited as long as it is an organic compound having one or more acidic sites in its molecule. As the acidic site, for example, a phosphoric acid group, a phenolic hydroxyl group, a carboxyl group, and a sulfonic acid group are preferable. A phenolic hydroxyl group or a carboxyl group is more preferable from the viewpoint of more effectively preventing metal migration and corrosion. The flux activator (D) can be used singly or in an appropriate mixture of two or more.

Although the flux activator (D) is not particularly limited, it preferably has an acid dissociation constant pKa of 3.8 or more and 15.0 or less from the viewpoint of sufficiently removing the oxide film on the joint. It is more preferably 4.0 or more and 14.0 or less from the viewpoint of compatibility between the storage stability of the filler material and the flux activity.

In the resin composition layer, the molecular weight of the flux activator (D) is not particularly limited. From the viewpoint of preventing volatilization of the activator (D), the molecular weight is preferably 200 or more, more preferably 250 or more. From the viewpoint of having motility as a flux activator and obtaining sufficient flux activity, the molecular weight of the flux activator (D) is preferably 8000 or less, more preferably 1000 or less, and 600 or less. It is even more preferable to have

Examples of the flux activator (D) include, but are not limited to, abietic acid, neoabietic acid, dehydroabietic acid, pimaric acid, isopimaric acid, parastric acid, diphenolic acid, dihydroabietic acid, tetrahydroabietic acid, hydrogenation Rosin resins such as rosin esters and rosin-modified maleic acid resins; N,N'-bis(salicylidene)-1,2-propanediamine, N,N'-bis(salicylidene)-1,3-propanediamine, etc. diamine series; phenolphthalin. These flux activators (D) are preferable from the viewpoint of excellent solubility in solvents and excellent storage stability of varnishes and underfill materials.

Among these, from the viewpoint of preventing deactivation by the thermosetting resin (A), the flux activator (D) is dehydroabietic acid, diphenolic acid, dihydroabietic acid, tetrahydroabietic acid, hydrogenated rosin ester, rosin-modified At least one selected from the group consisting of maleic acid resin, N,N'-bis(salicylidene)-1,2-propanediamine, and N,N'-bis(salicylidene)-1,3-propanediamine is more preferable, and it is particularly preferable to contain a rosin-based resin. Since these flux activators have relatively low reactivity, they hardly react with the thermosetting resin (A), and from the viewpoint of maintaining sufficient flux activity necessary for removing the oxide film, preferable. In addition, the flux activator (D) is more preferably a hydrogenated rosin ester in terms of obtaining even better flux activity.

A commercially available product can be used as the flux activator (D). Examples of rosin-based resins include Pine Crystal (registered trademark, hereinafter the same) series KR-85 (trade name, hereinafter the same), KR-612, KR-614, KE-100, KE-311, PE-590, KE-359, KE-604, KR-120, KR-140, KR-614, D-6011, and KR-50M; Marquid No. 32 (manufactured by Arakawa Chemical Industries, Ltd.) and the like.

The content of the flux activator (D) in the resin composition layer is not particularly limited, but from the viewpoint of ensuring insulation reliability and sufficient flux activity during mounting, the total amount of the thermosetting resin (A) is 100 mass. It is preferably 3 to 70 parts by mass, more preferably 5 to 50 parts by mass, even more preferably 8 to 40 parts by mass.

[Curing catalyst (E)]
The resin composition layer may further contain a curing catalyst (E). By including the curing catalyst (E) in the resin composition layer, the polymerization rate of the thermosetting resin (A) can be more suitably controlled, and a resin composition with moderate moldability tends to be obtained. The curing catalyst is not particularly limited as long as it is a compound capable of promoting polymerization of the thermosetting resin (A). Curing catalyst (E) can be used individually by 1 type or in mixture of 2 or more types.

The curing catalyst (E) is not particularly limited, but examples include organic peroxides, imidazole compounds, azo compounds, and tertiary amines such as triethylamine and tributylamine. Among these, from the viewpoint of obtaining a good polymerization rate and obtaining a good curing rate, it is preferable that at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof is included, and an organic More preferably, it contains both a peroxide and an imidazole compound.

The content of the curing catalyst (E) in the resin composition layer is not particularly limited, but from the viewpoint of obtaining a good curing speed, it is 0.02 per 100 parts by mass of the total amount of the thermosetting resin (A). It is preferably 10 parts by mass, more preferably 0.05 to 8 parts by mass.

(organic peroxide)
The organic peroxide according to the present embodiment is not particularly limited as long as it is a compound that releases an active substance (radical) capable of polymerizing the thermosetting resin (A) by heat, and is a known organic peroxide. can be used. An organic peroxide can be used individually by 1 type or in mixture of 2 or more types.

In the present embodiment, the 10-hour half-life temperature of the organic peroxide is not particularly limited, but is preferably 100°C or higher, and more preferably 110°C or higher from the viewpoint of productivity. It is preferable that the organic peroxide satisfies the 10-hour half-life temperature in the above range, since it is possible to increase the temperature of the solvent removal step during production.

Examples of organic peroxides include dicumyl peroxide, di(2-tert-butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2,5-dimethyl-2,5 - Ketone peroxides of bis(tert-butylperoxy)hexyne-3, benzoyl peroxide, di-t-butyl peroxide, methyl ethyl ketone peroxide, and cyclohexanone peroxide; 1,1-di(t-butylperoxy)cyclohexane , and peroxyketals of 2,2-di(4,4-di(t-butylperoxy)cyclohexyl)propane; tert-butyl hydroperoxide, p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, cumene hydroperoxide Peroxides and hydroperoxides of t-butyl hydroperoxide; di(2-t-butylperoxyisopropyl)benzene, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane, t- Butylcumyl peroxide, di-t-hexyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexyne-3, α,α'-di(t-butylperoxy)diisopropyl dialkyl peroxide of benzene and di-t-butyl peroxide; dibenzoyl peroxide and diacyl peroxide of di(4-methylbenzoyl) peroxide; di-n-propylperoxydicarbonate and diisopropylperoxydicarbonate Peroxydicarbonates of carbonates; 2,5-dimethyl-2,5-di(benzoylperoxy)hexane, t-hexylperoxybenzoate, t-butylperoxybenzoate, and t-butylperoxy-2-ethyl Peroxyester of hexanonate and the like can be mentioned. Dicumyl peroxide, di(2-tert-butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2,5- at least one selected from the group consisting of dimethyl-2,5-bis(tert-butylperoxy)hexyne-3, α,α'-di(t-butylperoxy)diisopropylbenzene, and tert-butyl hydroperoxide is preferred.

In the resin composition layer, the content of the organic peroxide is not particularly limited, but from the viewpoint of obtaining a better polymerization speed and curing speed, , preferably 0.02 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

(Imidazole compound)
The imidazole compound is not particularly limited as long as it can promote polymerization of the thermosetting resin (A), and known imidazole compounds can be used. An imidazole compound can be used 1 type or in mixture of 2 or more types.

Examples of imidazole compounds include 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 2,4,5-triphenylimidazole, triethylamine and tributylamine. Tertiary amines, as well as their derivatives are included. Among them, 2-ethyl-4-methylimidazole is preferred because it is easier to control the reaction speed and curing speed.

In the resin composition layer, the content of the imidazole compound is not particularly limited, but from the viewpoint that the adjustment of the polymerization rate and the curing rate becomes easier, the total amount of the thermosetting resin (A) is 100 parts by mass. It is preferably 0.02 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

(azo compound)
The azo compound is not particularly limited as long as it can accelerate the polymerization of the thermosetting resin (A), and known azo compounds can be used. Azo compounds can be used singly or in combination of two or more.
Examples of azo compounds include 2,2'-azobisbutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2,4- dimethylvaleronitrile) and the like.

In the resin composition layer, the content of the azo compound is not particularly limited, but from the point of view that the adjustment of the polymerization rate and the curing rate becomes easier, the total amount of the thermosetting resin (A) is 100 parts by mass. It is preferably 0.02 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

[Curing agent (F)]
The resin composition layer may further contain a curing agent (F). The curing agent (F) is used for the purpose of improving the curability of the thermosetting resin (A), adjusting the curing speed of the thermosetting resin (A), and the like. As the curing agent (F), a known one can be appropriately selected according to the type of the thermosetting resin (A) used, and examples thereof include phenol resins, amines, thiols and the like.

In the present embodiment, the content of the curing agent (F) is not particularly limited. It is preferably 3 to 80 parts by mass, more preferably 5 to 70 parts by mass, and particularly preferably 15 to 50 parts by mass, based on 100 parts by mass in total with the curing agent (F).

(aminotriazine novolac resin)
Moreover, although not particularly limited, as the curing agent (F), for example, an aminotriazine novolac resin can be used. For example, when an aminotriazine novolak resin is used as a curing agent (F) for a resin composition containing a maleimide compound or a citraconimide compound as a main component, the aminotriazine novolak resin has a triazine skeleton, and thus maleimide groups and/or or can react well with citraconimide groups. Therefore, for example, the aminotriazine novolac resin can be used to cure the thermosetting resin while suitably controlling the radical polymerization reaction rate. In addition, since the aminotriazine novolac resin has a novolak skeleton bonded to the triazine skeleton, it can contain many hydroxy groups and amino groups even after curing. Therefore, even after curing, good chemical bonding occurs between these groups and the silanol groups of the chip, so that the chip adhesion of the resin composition layer can be improved.

The resin composition layer can contain an aminotriazine novolak resin from the viewpoint of reducing voids and improving chip adhesion. As the aminotriazine novolak resin, a known resin can be used as long as it is a phenol formaldehyde resin (phenol resin) having a triazine ring in the molecule. Such aminotriazine novolac resins can be prepared by known methods, for example, by modifying phenolic resins with nitrogen compounds such as melamine. Aminotriazine novolac resins may be used singly or in admixture of two or more.

In the resin composition layer, the content of the aminotriazine novolak resin is preferably 5 to 70 parts by mass with respect to the total of 100 parts by mass of the aminotriazine novolak resin and the thermosetting resin (A), and is more excellent. 15 to 50 parts by mass is more preferable, and 20 to 40 parts by mass is particularly preferable, since low voids and chip adhesion can be obtained.

The weight average molecular weight of the aminotriazine novolac resin is preferably 300 to 9,500, more preferably 500 to 5,000, because it provides even better low void properties and chip adhesion. more preferred. In addition, in this embodiment, a weight average molecular weight is a value of standard polystyrene conversion calculated|required by GPC (gel permeation chromatography) method.

The aminotriazine novolac resin preferably has a nitrogen content of 10 to 25% by mass based on 100% by mass of the aminotriazine novolac resin, because it provides even better low void properties and chip adhesion. It is more preferable to be 15 to 20% by mass, since further excellent chip adhesiveness can be obtained together with further excellent low void property.

　As an aminotriazine novolac resin, further excellent low void properties and chip adhesiveness can be obtained, so its hydroxy group equivalent is 80 to 200 g/eq. is preferably 100 to 180 g/eq. is more preferable. In the present embodiment, the hydroxy group equivalent means mg of potassium hydroxide required to acetylate the hydroxy groups contained in 1 g of the aminotriazine novolac resin. Specifically, it is measured according to JIS K 0070.

The aminotriazine novolac resin is selected from the group consisting of the compounds represented by the following formula (1) and the compounds represented by the following formula (2), since even more excellent low void property and chip adhesiveness can be obtained. It is preferable to include one or more of the

In formula (1), each R ₁ independently represents a hydrogen atom, a methyl group, or an ethyl group. It is preferable that each R ₁ is independently a hydrogen atom or a methyl group, since further excellent low void property and chip adhesion can be obtained. l, m, and n each independently represent an integer of 0 to 10; It is preferable that l, m and n are each independently an integer of 1 to 6, since even better low void property and chip adhesion can be obtained. (l+m+n) represents an integer of 1-20. (l+m+n) is preferably an integer of 3 to 18, since even better low void property and chip adhesion can be obtained. The compound represented by formula (1) is, for example, a compound having different functional groups and the number of R ₁ in formula (1), a compound having different numbers of l, m, and n, and the number of (l + m + n) may be a mixture containing compounds having different

In formula (2), each R ₂ independently represents a hydrogen atom, a methyl group, or an ethyl group. It is preferable that each R ₂ is independently a hydrogen atom or a methyl group, since further excellent low void property and chip adhesion can be obtained. o, p, q, r, and s each independently represent an integer of 0 to 10; Each of o, p, q, r, and s is preferably an integer of 1 to 4, because even better low void property and chip adhesion can be obtained. (o+p+q+r+s) represents an integer of 1-20. (o+p+q+r+s) is preferably an integer of 5 to 20, since even better low void property and chip adhesion can be obtained. The compounds represented by formula (2) include, for example, compounds having different functional groups and the number of R ₂ in formula (2), compounds having different numbers of o, p, q, r, and s, ( It may be a mixture containing compounds having different numbers of o+p+q+r+s).

Further excellent low void property and chip adhesion are obtained, so that the aminotriazine novolac resin is a mixture of the compound represented by the formula (1) and the compound represented by the formula (2). is more preferred. As such a mixture, even more excellent low void property and chip adhesiveness can be obtained, so the mass ratio of the compound represented by formula (1) and the compound represented by formula (2) (formula ( The ratio of the compound represented by 1) (parts by mass): the compound represented by formula (2) (parts by mass)) is preferably 50:50 to 90:10, and 60:40 to 85:15. is more preferable.

As the aminotriazine novolac resin, a commercially available product may be used. -7054 (trade name) and LA-7751 (trade name).

[Other ingredients]
The resin composition layer may contain one or two or more other components in addition to the thermosetting resin (A), the visible light absorbent (B), and the like.
Examples of other components include, but are not particularly limited to, flexibility imparting components. The flexibility imparting component is not particularly limited as long as it is a component capable of imparting flexibility to the layer containing the resin composition. Examples of such components include thermosetting resin (A), visible light absorber (B), inorganic filler (C), flux activator (D), curing catalyst (E), and curing agent (F). Polyimide, polyamideimide, polystyrene, polyolefin, styrene-butadiene rubber (SBR), isoprene rubber (IR), butadiene rubber (BR), (meth)acrylonitrile butadiene rubber (NBR), polyurethane, polypropylene, (meth) acrylic Thermoplastic polymer compounds such as oligomers, (meth)acrylic polymers, and silicone resins can be mentioned. These flexibility-imparting components can be used singly or in admixture of two or more.

In addition, the resin composition layer may contain, as another component, a silane coupling agent for the purpose of further improving the adhesiveness of the interface between the resin component and the inorganic filler (C) and the moisture absorption and heat resistance. can. Silane coupling agents include, for example, vinyltrimethoxysilane and vinylsilane-based silane coupling agents such as γ-(meth)acryloxypropyltrimethoxysilane; phenylaminosilanes such as N-phenyl-3-aminopropyltrimethoxysilane. silane coupling agents; phenylsilane-based silane coupling agents such as trimethoxyphenylsilane; and imidazole silane-based silane coupling agents. These silane coupling agents can be used singly or in admixture of two or more.
When using a silane coupling agent, its content is not particularly limited, but from the viewpoint of further improving moisture absorption and heat resistance and further reducing the amount of volatilization during flip chip mounting, the total amount of the thermosetting resin (A) It is preferably 0.02 to 20 parts by mass with respect to 100 parts by mass.

In addition, the resin composition layer may contain a wetting and dispersing agent as another component for the purpose of further improving the manufacturability of the film-like underfill material and further improving the dispersibility of the filler. The wetting and dispersing agent is not particularly limited as long as it is a wetting and dispersing agent generally used for paints and the like. For example, BYK-Chemie Japan Co., Ltd. DISPERBYK (registered trademark) -110 (trade name), -111 (trade name), -180 (trade name), -161 (trade name), BYK-W996 ( (trade name), W9010 (trade name), and W903 (trade name). These wetting and dispersing agents can be used singly or in admixture of two or more.
When a wetting and dispersing agent is used, its content is not particularly limited, but from the viewpoint of further improving the manufacturability of the film-like underfill material, it is 0.1 per 100 parts by mass of the inorganic filler (C). It is preferably 5 parts by mass, more preferably 0.5 to 3 parts by mass. When two or more wetting and dispersing agents are used in combination, the total amount thereof preferably satisfies the above ratio.

As other components, the resin composition layer may contain various additives for various purposes as long as the desired properties are not impaired. Additives include, for example, thickeners, lubricants, defoamers, leveling agents, brighteners, flame retardants, and ion trapping agents. These additives can be used singly or in admixture of two or more.
The content of the other additives in the resin composition layer is not particularly limited, but is usually 0.01 to 10 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin (A).

[Method for preparing resin composition for film-like underfill material]
As described above, the resin composition for a film-like underfill material of the present embodiment contains a thermosetting resin (A), a visible light absorber (B), etc., and as long as a composition having the above composition is obtained, The method is not particularly limited. The resin composition comprises, for example, a thermosetting resin (A) and a visible light absorber (B), and optionally an inorganic filler (C), a flux activator (D), and a curing catalyst (E). , the curing agent (F), and other components can be appropriately mixed. If necessary, these components may be dissolved or dispersed in an organic solvent to form a varnish. A varnish can be suitably used when producing a film-like underfill material. As for a specific method for manufacturing the film-like underfill material, the above-described method for manufacturing a laminate and Examples described later can be referred to.
The resin composition for the film-like underfill material of the present embodiment can be suitably used for producing the resin composition layer of the film-like underfill material of the present embodiment, but the present embodiment is limited to this. However, it is also applicable to film-like underfill materials other than the film-like underfill material of the present embodiment.

The organic solvent is not particularly limited as long as it can suitably dissolve or disperse the above components and does not impair the effects of the present invention. Examples of organic solvents include alcohols such as methanol, ethanol, and propanol; ketones such as acetone, methyl ethyl ketone (hereinafter sometimes abbreviated as "MEK"), and methyl isobutyl ketone; dimethylacetamide, and dimethylformamide. amides such as; aromatic hydrocarbons such as toluene and xylene. These organic solvents can be used singly or in admixture of two or more.

[Semiconductor chip with resin composition layer and substrate for mounting semiconductor chip with resin composition layer]
The film-like underfill material of the present embodiment can be suitably used as an underfill material for semiconductor chips and substrates for mounting semiconductor chips.

For example, a semiconductor chip with a resin composition layer includes a semiconductor chip and a layer including a resin composition layer laminated on the semiconductor chip. A substrate for mounting a semiconductor chip with a resin composition layer includes a substrate for mounting a semiconductor chip and a layer including a resin composition layer laminated on the substrate for mounting a semiconductor chip.

In the method for manufacturing a semiconductor chip with a resin composition layer of this embodiment, a semiconductor chip with a resin composition layer can be manufactured using the film-like underfill material of this embodiment described above. The method for producing a semiconductor chip with a resin composition layer is not particularly limited. The resin composition layers of the material are laminated so that they face each other, then the base film of the film-like underfill material is peeled off, and then singulated with a dicing saw or the like to form a semiconductor chip with a resin composition layer. Obtainable. Further, in the method for manufacturing a semiconductor chip mounting board with a resin composition layer of the present embodiment, the film-like underfill material of the present embodiment can be used to manufacture a semiconductor chip mounting board with a resin composition layer. can. The method for producing a substrate for mounting a semiconductor chip with a resin composition layer is not particularly limited. It is obtained by bonding the layers so that they face each other, and then peeling off the base film of the film-like underfill material.

The method for bonding the film-like underfill material of the present embodiment to a semiconductor wafer or semiconductor chip mounting substrate is not particularly limited, but a vacuum pressure laminator can be preferably used. In this case, it is preferable to apply pressure to the film-like underfill material of the present embodiment via an elastic body such as rubber to bond them together. The lamination conditions are not particularly limited as long as they are conditions generally used in the industry, but for example, a temperature of 50 to 140° C., a contact pressure in the range of 1 to 11 kgf/cm ² and an atmospheric pressure reduction of 20 hPa or less. done below. After the lamination step, the bonded film-like underfill material may be smoothed by hot pressing with a metal plate. The lamination process and the smoothing process can be performed continuously by a commercially available vacuum pressure laminator. In any case, the film-like underfill material attached to the semiconductor wafer or the semiconductor-mounted chip mounting substrate is subjected to removal of the base film before flip-chip mounting of the chip.

[Semiconductor device]
A semiconductor device can be configured using the semiconductor chip with the resin composition layer and/or the substrate for mounting a semiconductor chip with the resin composition layer. In other words, in the method for manufacturing a semiconductor device of this embodiment, a semiconductor device can be manufactured using the film-like underfill material of this embodiment. Specifically, the semiconductor device includes a semiconductor chip with a resin composition layer and/or a substrate for mounting a semiconductor chip with a resin composition layer. A method for manufacturing a semiconductor device is not particularly limited, but an example thereof includes a method of mounting a semiconductor chip with a resin composition layer on a substrate for mounting a semiconductor chip. Also, a semiconductor chip may be mounted on the substrate for mounting a semiconductor chip with a resin composition layer. In the method of mounting a semiconductor chip with a resin composition layer on a semiconductor chip mounting substrate and the method of mounting a semiconductor chip on a semiconductor chip mounting substrate with a resin composition layer, a flip chip bonder compatible with the thermocompression bonding method is preferably used. can be used. In addition, in the present embodiment, the case of flip-chip mounting a semiconductor chip on a substrate for mounting a semiconductor chip is described for the sake of convenience. A substrate other than a chip mounting substrate is also possible. For example, the resin composition layer can be used as a bonding portion between a semiconductor wafer and a semiconductor chip when mounting a semiconductor chip on a semiconductor wafer, or as a chip laminate for connecting semiconductor chips via TSV (Through Silicon Via) or the like. However, it is also possible to use it for the junction between each semiconductor chip, and the effect of this embodiment can be obtained in either case.

Hereinafter, the present embodiment will be described more specifically using examples and comparative examples. This embodiment is not limited at all by the following examples.

[Example 1]
(Preparation of resin composition (varnish))
As the thermosetting resin (A), a bismaleimide compound (long-chain maleimide; MIZ-001 (trade name), Nippon Kayaku Co., Ltd., containing a maleimide compound represented by formula (9), in formula (9) is a mixture of 1 to 6 (integer)) 70 parts by mass, bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane (phenylene-type maleimide; BMI-70 (trade name), Kay Ai Kasei Co., Ltd.) 10 parts by mass;
As a visible light absorber (B), black dye (Kayaset Black AN (trade name, Nippon Kayaku Co., Ltd.)) 0.1 parts by mass;
As an inorganic filler (C), slurry silica (YA050C-MJM (trade name), Admatechs Co., Ltd., phenylaminosilane-treated silica, solid content 50% by mass, dispersion medium: MEK, average particle size: 50 nm) 180 parts by mass (90 parts by mass in terms of non-volatile content);
25 parts by mass of a hydrogenated rosin ester (Pine Crystal (registered trademark); KR-140 (trade name), Arakawa Chemical Industries, Ltd.) as a flux activator (D);
As a curing catalyst (E), an organic peroxide α,α'-di(t-butylperoxy)diisopropylbenzene (PERBUTYL (registered trademark) P, NOF Corporation, 10-hour half-life temperature: 119. 20 ° C.) 0.05 parts by mass, and an imidazole compound 2-ethyl-4-methylimidazole (2E4MZ, Shikoku Chemical Industry Co., Ltd.) 1 part by mass;
As a curing agent (F), aminotriazine novolak resin (Phenolite (registered trademark); LA-1356 (trade name, DIC Corporation)) 33.3 parts by mass (20 parts by mass in terms of non-volatile content),
and stirred for 40 minutes in a hot water bath at 60° C. using a high-speed stirrer, and MEK was separately added to obtain a varnish (resin composition) having a solid content concentration of 60% by mass.
Incidentally, LA-1356 (trade name, DIC Corporation), which is an aminotriazine novolac resin, is a compound represented by the above formula (1) (a mixture of compounds represented by formula (1), and the mixture Among them, R ¹ is each independently a hydrogen atom or a methyl group, 1, m, and n are each independently an integer of 1 to 6, and (l+m+n) is an integer of 3 to 18. compound group) and a compound represented by formula (2) (a mixture of compounds represented by formula (2), in which R ² is each independently a hydrogen atom or methyl group, o, p, q, r, and s are each independently an integer of 1 to 4, and (o + p + q + r + s) is an integer of 5 to 20) and a mixture of In the mixture, the mass ratio (formula (1): formula (2)) of the compound (mixture) represented by formula (1) and the compound (mixture) represented by formula (2) is 65 (mass parts): 35 (mass parts).

(Preparation of film-like underfill material)
The resulting varnish (resin composition) was applied to a 38 μm-thick polyethylene terephthalate film (base film; release agent thickness: 0.1 μm, TR1-38 (trade name, Unitika Co., Ltd.) and dried by heating at 100° C. for 5 minutes under 1 atmosphere to obtain a film-like underfill material in which a resin composition layer having a thickness of 16.5 μm is formed on the base film. Obtained. The thickness of the resin composition layer is determined by measuring the thickness of the film-like underfill material using a micrometer (MDH-25M, manufactured by Mitutoyo Co., Ltd.). Calculated excluding film thickness.

[Example 2]
A film-like underfill material was obtained in the same manner as in Example 1, except that the thickness of the resin composition layer was changed to 43 μm in “Preparation of film-like underfill material”.

[Example 3]
In "Preparation of resin composition (varnish)", the amount of black dye used was changed to 0.3 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was changed to 16.0 μm. A film-like underfill material was obtained in the same manner as in Example 1 except that

[Example 4]
A film-like underfill material was obtained in the same manner as in Example 3, except that the thickness of the resin composition layer was changed to 35 μm in “Preparation of film-like underfill material”.

[Example 5]
In "Preparation of resin composition (varnish)", except that the amount of black dye used was changed to 0.5 parts by mass, and the thickness of the resin composition layer was changed to 17.0 μm in the preparation of the film-like underfill material. A film-like underfill material was obtained in the same manner as in Example 1.

[Example 6]
A film-like underfill material was obtained in the same manner as in Example 5, except that the thickness of the resin composition layer was changed to 30 μm in “Preparation of film-like underfill material”.

[Example 7]
In "Preparation of resin composition (varnish)", the amount of black dye used was changed to 0.7 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was changed to 17.0 µm. A film-like underfill material was obtained in the same manner as in Example 1 except that

[Example 8]
A film-like underfill material was obtained in the same manner as in Example 7, except that the thickness of the resin composition layer was changed to 33 μm in the preparation of “Preparation of film-like underfill material”.

[Example 9]
In "Preparation of resin composition (varnish)", the amount of black dye used was changed to 1.0 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was changed to 17.0 µm. A film-like underfill material was obtained in the same manner as in Example 1 except that

[Example 10]
A film-like underfill material was obtained in the same manner as in Example 9, except that the thickness of the resin composition layer was changed to 33 μm in “Preparation of film-like underfill material”.

[Example 11]
In "Preparation of resin composition (varnish)", except that the amount of black dye used was changed to 2.0 parts by mass, and the thickness of the resin composition layer was changed to 18.0 μm in the production of film-like underfill material. A film-like underfill material was obtained in the same manner as in Example 1.

[Comparative Example 1]
A film-like underfill material was obtained in the same manner as in Example 11, except that the thickness of the resin composition layer was changed to 41 μm in “Preparation of film-like underfill material”.

[Comparative Example 2]
In "Preparation of resin composition (varnish)", black dye was not used. A film-like underfill material was obtained.

[Comparative Example 3]
In the "preparation of resin composition (varnish)", no black dye is used, and slurry silica (methacrylic surface-treated silica; 5SM-CM2 (trade name), manufactured by Admatechs Co., Ltd., solid content 70%, dispersion medium: MEK, average particle diameter: 500 nm) 128.6 parts by mass (90 parts by mass in terms of nonvolatile matter), "Film A film-like underfill material was obtained in the same manner as in Example 1, except that the thickness of the resin composition layer was changed to 38 μm in “Preparation of underfill material”.

[Comparative Example 4]
In the "preparation of the resin composition (varnish)", without using a black dye, the amount of slurry silica (YA050C-MJM) used as the inorganic filler (C) was changed to 90 parts by mass (45 parts by mass in terms of non-volatile matter). 64.3 parts by mass (45 parts by mass in terms of nonvolatile matter) of slurry silica (methacrylic surface-treated silica; 5SM-CM2) is added, and in "Preparation of film-like underfill material", the resin composition layer A film-like underfill material was obtained in the same manner as in Example 1, except that the thickness was changed to 35 μm.

"evaluation"
(1) Transmittance (measurement of light transmittance at 600 nm)
A sample A was prepared by cutting the film-like underfill material obtained in each example and comparative example into a size of 5 cm in width and 5 cm in length. The light transmittance of this sample A at 600 nm was measured at room temperature with a spectrocolorimeter (SD6000 (trade name), manufactured by JASCO Corporation), and the "light transmittance of the film-like underfill material at a wavelength of 600 nm rate "T ⁰ .
Similarly, the base film used in each example and comparative example was cut into a width of 5 cm and a length of 5 cm to prepare a sample B. The light transmittance of this sample B at 600 nm was measured at room temperature with a spectral colorimeter (SD6000 (trade name), manufactured by JASCO Corporation), and the "light transmittance of the base film at a wavelength of 600 nm" was measured. ^T1 .

(Difference between light transmittance of underfill material, light transmittance of base film, and resin composition layer)
In each example and comparative example, the difference between the light transmittance [T ¹ ] of the base film at a wavelength of 600 nm and the light transmittance [T ⁰ ] of the underfill material at a wavelength of 600 nm, |T ¹ −T ⁰ |, was calculated. . As a result of the calculation, numerical values less than 0 are indicated with a negative sign in the table, but these values were judged based on their absolute values.

(Alignment mark recognizability)
The film-shaped underfill material obtained in each example and comparative example was attached to a substrate for mounting a semiconductor chip (WALTS Co., Ltd., WALTS-KIT CC80 (W)-0105JY (trade name)) having an alignment mark, The base film is peeled off from the resin composition layer, and the alignment marks on the substrate are observed from the resin composition layer side with a camera equipped with a flip chip bonder (LFB-2301 (trade name), Shinkawa Co., Ltd.). The recognizability of the alignment mark was evaluated according to the criteria of .
<standard>
A: Alignment marks could be recognized.
C: Alignment marks could not be recognized.

(NCF visibility)
The film-like underfill material obtained in each example and comparative example was visually observed to confirm which of the front and back sides of the film-like underfill material was the resin composition layer (NCF), and the NCF was visually recognized according to the following criteria. evaluated for gender.
<standard>
A: The surface of the resin composition layer (NCF) was easily recognized (in less than 3 seconds).
B: It took 3 seconds or longer to recognize the surface of the resin composition layer (NCF).
C: It was difficult to recognize the surface of the resin composition layer (NCF).

(2) Varnish Storage Stability After the varnishes (resin compositions) obtained in Examples and Comparative Examples were allowed to stand at 25° C. for one week in a closed container, the presence or absence of sediment on the bottom of the container was visually confirmed. If sediment is observed, only the sediment is collected and the mass of the sediment is measured, the inorganic filler sedimentation rate after one week is calculated by the following formula, and the varnish storage stability is determined according to the following criteria. evaluated the sex.
Inorganic filler sedimentation rate = mass of sediment / inorganic filler non-volatile content × 100
<standard>
A: No sediment was found by visual observation.
B: Sediment was visually confirmed, but the sedimentation rate of the inorganic filler was less than 5%.
C: The inorganic filler sedimentation rate was 5% or more.

The film-like underfill material of the present embodiment is excellent in handleability and can be easily and accurately arranged on an object such as a wafer. It is suitably used as a material for substrates, semiconductor devices, and methods for producing these.

The disclosure of Japanese Patent Application No. 2021-169233 filed on October 15, 2021, and the disclosure of Japanese Patent Application No. 2022-26833 filed on February 24, 2022 are referenced in their entireties. incorporated herein.
Further, all publications, patent applications and technical standards mentioned in the specification shall be referred to to the same extent as if each individual publication, patent application or technical standard were specifically and individually noted to be incorporated by reference. , incorporated herein by reference.

Claims

a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B);
A film-like underfill material comprising a base film,
The film-like underfill material has a light transmittance of 20 to 90% at a wavelength of 600 nm, and
A film-like underfill material, wherein the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film-like underfill material at a wavelength of 600 nm is 2 to 80%.
The film-like underfill material according to claim 1, wherein the thickness of the resin composition layer is in the range of 5 to 500 µm.
The film-like underfill material according to claim 1, wherein the visible light absorbent (B) is at least one selected from the group consisting of organic dyes, organic pigments, and combinations thereof.
The visible light absorber (B) is a quinone-based, aminoketone-based, cationic, cyanine-based, phthalocyanine-based, quinacdrine-based, diaryl/triarylmethane-based, fulgide, azo-based, squarylium-based, oxonol-based, benzylidene-based, nitro 2. The film-like underfill material according to claim 1, comprising at least one compound selected from at least one compound selected from the group consisting of nitroso-based, thiazole-based, indigoid-based, and combinations thereof.
The film-like underfill material according to claim 1, wherein the visible light absorbent (B) contains at least one compound selected from the group consisting of quinones, aminoketones, and combinations thereof.
The film-like underfill material according to claim 1, wherein the thermosetting resin (A) contains at least one selected from the group consisting of maleimide compounds, citraconimide compounds, and combinations thereof.
The maleimide compound includes 2,2′-bis{4-(4-maleimidophenoxy)phenyl}propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis( maleimide) hexane, N,N'-1,3-phenylenedimaleimide, N,N'-1,4-phenylenedimaleimide, N-phenylmaleimide, a maleimide compound represented by the following formula (3), the following formula ( A bismaleimide compound containing a structural unit represented by 4) and maleimide groups at both ends, a maleimide compound represented by the following formula (5), a maleimide compound represented by the following formula (6), and a following formula (7) ) and at least one selected from the group consisting of combinations thereof.

(In formula (3), n3 represents an integer of 1 to 30.)

(In formula (4), R 11 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 12 represents a carbon number A linear or branched alkylene group of 1 to 16, or a linear or branched alkenylene group of 2 to 16 carbon atoms, wherein each R 13 is independently a hydrogen atom or a represents a linear or branched alkyl group, or a linear or branched alkenyl group having 2 to 16 carbon atoms, n 5 represents an integer of 1 to 10.)

(In formula (5), each R 8 independently represents a hydrogen atom, a methyl group, or an ethyl group. Each R 9 independently represents a hydrogen atom or a methyl group.)

(In formula (6), each R 10 independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. n 4 represents an integer of 1 to 10.)

(In formula (7), each R 10 independently represents a hydrogen atom or a methyl group, and n 2 represents an integer of 1 or more.)
The maleimide compound is 2,2′-bis{4-(4-maleimidophenoxy)phenyl}propane, the maleimide compound represented by the formula (3), the structural unit represented by the formula (4) and both ends a bismaleimide compound containing a maleimide group in, a maleimide compound represented by the above formula (5), a maleimide compound represented by the above formula (6), a maleimide compound represented by the above formula (7), and these The film-like underfill material according to claim 7, comprising at least one selected from the group of combinations.
The film-like underfill material according to claim 1, further comprising an inorganic filler (C).
The film-like underfill material according to claim 9, wherein the inorganic filler (C) has an average particle size of 400 nm or less.
Claim 9, wherein the inorganic filler (C) comprises at least one selected from the group consisting of silica, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof. The film-like underfill material according to .
The film-like underfill material according to claim 9, wherein the content of the inorganic filler (C) is 10 to 500 parts by mass with respect to the total amount of 100 parts by mass of the thermosetting resin (A).
The inorganic filler (C) has an average particle size of 400 nm or less,
The inorganic filler (C) contains at least one selected from the group consisting of silica, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof,
The film-like underfill material according to claim 9, wherein the content of the inorganic filler (C) is 10 to 500 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin (A).
The film-like underfill material according to claim 1, further comprising a flux activator (D).
The film-like underfill material according to claim 14, wherein the flux activator (D) contains a rosin-based resin.
The film-like underfill material according to claim 1, further comprising a curing catalyst (E).
The film-like underfill material according to claim 16, wherein the curing catalyst (E) contains at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof.
The film-like underfill material according to claim 1, further comprising a curing agent (F).
The film-like underfill material according to claim 18, wherein the curing agent (F) contains an aminotriazine novolak resin.
A resin composition for a film-like underfill material containing a thermosetting resin (A) and a visible light absorber (B).
A method for manufacturing a semiconductor chip with a resin composition layer, using the film-like underfill material according to any one of claims 1 to 19.
A method for manufacturing a substrate for mounting a semiconductor chip with a resin composition layer, using the film-like underfill material according to any one of claims 1 to 19.
A method for manufacturing a semiconductor device using the film-like underfill material according to any one of claims 1 to 19.