WO2022243352A1

WO2022243352A1 - Process for producing an optoelectronic component and optoelectronic component

Info

Publication number: WO2022243352A1
Application number: PCT/EP2022/063389
Authority: WO
Inventors: Jens Ebbecke
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2021-05-20
Filing date: 2022-05-18
Publication date: 2022-11-24
Also published as: DE102021113095A1

Abstract

A process for producing an optoelectronic component comprises steps of providing a carrier having an electrical contact surface, arranging an optoelectronic semiconductor chip on the electrical contact surface of the carrier, arranging an embedding material above the carrier, wherein the embedding material comprises embedded particles, wherein the optoelectronic semiconductor chip is at least partially embedded in the embedding material, arranging an electrode above the optoelectronic semiconductor chip and the embedding material, applying an inhomogeneous electrical field between the electrical contact surface and the electrode, wherein the particles are at least partially reoriented by the electrical field, and curing the embedding material.

Description

Method for producing an optoelectronic component and optoelectronic component

DESCRIPTION

The present invention relates to a method for producing an optoelectronic component and an optoelectronic component.

This patent application claims the priority of German patent application DE 102021 113 095.6, the disclosure of which is hereby incorporated by reference.

Optoelectronic components with optoelectronic semiconductor chips are known from the prior art. In many optoelectronic components, such as screens in the case of images, light emission in a defined spatial direction is desired.

One object of the present invention is to specify a method for producing an optoelectronic component. Another object is to provide an optoelectronic component. These objects are achieved by a method for producing an optoelectronic component and by an optoelectronic component having the features of the independent claims. Various developments are specified in the dependent claims.

A method for producing an optoelectronic component comprises steps of providing a carrier with an electrical contact area, arranging an optoelectronic semiconductor chip on the electrical contact area of the carrier, arranging an encapsulating material over the carrier, wherein the encapsulating material has embedded particles, wherein the optoelectronic semiconductor chip is at least partially embedded in the encapsulation material, for arranging an electrode over the optoelectronic See the semiconductor chip and the embedding material, for applying an inhomogeneous electric field between the electrical contact surface and the electrode's, the particles being at least partially reoriented by the electric field, and for curing the embedding material.

Advantageously, at least partial alignment of the particles can be achieved by the reorientation of the particles by the inhomogeneous electric field. The subsequent curing of the embedding material fixes the particles in their aligned orientation in the embedding material. As a result, the particles contained in the embedding material can be at least partially aligned in the optoelectronic component obtainable by the method such that electromagnetic radiation emitted by the optoelectronic semiconductor chip is scattered on the particles in the direction of a top side of the optoelectronic component. As a result, a proportion of the light coupled out on the upper side of the optoelectronic component can be increased. The optoelectronic component obtainable by the method can therefore have an increased efficiency.

In one embodiment of the method, the particles are reoriented in such a way that they are at least partially aligned with field lines of the inhomogeneous electric field. The reorientation of the particles can be done by the process of dielectrophoresis. Advantageously, this represents a simple way of specifying the desired orientation of the particles embedded in the embedding material.

In one embodiment of the method, the particles have a shape that deviates from a spherical shape, in particular an ellipsoidal shape. Advantageously, a shape deviating from a spherical shape allows a reorientation and alignment of the particles. Particles having an ellipsoidal shape advantageously have a surface section reduced curvature, which is suitable for scattering light emitted by the optoelectronic semiconductor chip.

In one embodiment of the method, the particles can be electrically polarized. This advantageously makes it possible to reorient the particles by means of an inhomogeneous electric field.

In one embodiment of the method, the electric field is applied as an alternating electric field. The alternating electric field can have a frequency between 1 Hz and 1 MHz, for example. A frequency between 1 kHz and 10 kHz can be particularly favorable. The use of an inhomogeneous electric alternating field can advantageously bring about a particularly clear polarization of the particles embedded in the embedding material. Greater polarization advantageously causes higher forces acting on the particles and reorienting them.

In one embodiment of the method, the electrode has a plate shape and is arranged parallel to the carrier. This advantageously results in a particularly simple arrangement.

In one embodiment of the method, the electrode has a larger area than the electrical contact area. This advantageously results in an inhomogeneous electrical field between the electrical contact surface and the electrode.

In one embodiment of the method, the particles have TiO 2 . Advantageously, particles that have TiO 2 have a high light-scattering capacity and can be electrically polarized.

In one embodiment of the method, the encapsulant material comprises a silicone, an acrylic, or an epoxy. Such an embedding material is advantageously easy to process and has favorable properties.

In one embodiment of the method, the carrier is provided with a plurality of electrical contact areas. A number of optoelectronic semiconductor chips are arranged on the number of electrical contact areas. The multiple optoelectronic semiconductor chips are embedded together in the encapsulation material. The electrode is arranged over the several ren optoelectronic semiconductor chips. The inhomogeneous electric field is applied between the plurality of electrical contact pads and the electrode. Advantageously, this can result in a reorientation of the particles in the vicinity of the plurality of optoelectronic semiconductor chips. The optoelectronic component that can be obtained by the method can be, for example, a display device, for example a screen. In this case, the optoelectronic component obtainable by the method can comprise a plurality or all of the optoelectronic semiconductor chips arranged on the carrier.

In one embodiment of the method, after the embedding material has hardened, there is a further step for dividing the carrier and the embedding material in order to separate the optoelectronic component. In this case, the method enables parallel production of a plurality of optoelectronic components of the same type.

An optoelectronic component includes a carrier with an electrical contact area. An optoelectronic semiconductor chip is arranged on the electrical contact surface. An encapsulant material having a top surface is disposed over the carrier. The embedding material has embedded particles. The optoelectronic semiconductor chip is at least partially embedded in the embedding material. The particles are at least partially aligned along a preferred direction. The particles embedded in the embedding material of this optoelectronic component can advantageously at least partially scatter electromagnetic radiation emitted by the optoelectronic semiconductor chip in the direction of the upper side of the embedding material as a result of their orientation along the preferred direction. This increases the proportion of electromagnetic radiation emerging from the embedding material at the top. As a result, the optoelectronic component can advantageously have a high degree of efficiency.

In one embodiment of the optoelectronic component, in the case of a plurality of the particles, a main axis is oriented in the direction of the upper side of the embedding material and away from the optoelectronic semiconductor chip. Advantageously, this results in a particularly favorable alignment of the particles, which enables a large proportion of the radiation emitted by the optoelectronic semiconductor chip to be scattered in the direction of the upper side of the embedding material. The particles can have an ellipsoidal shape, for example.

In one embodiment of the optoelectronic component, in the case of a majority of the particles, a minor axis is oriented in the direction of the upper side of the embedding material and of the optoelectronic semiconductor chip. Advantageously, a flat side of the particles is then oriented towards the top of the encapsulating material and towards the optoelectronic semiconductor chip. This enables a particularly effective scattering of the electromagnetic radiation emitted by the optoelectronic semiconductor chip at the particles.

The properties, features and advantages of this invention described above, and the manner in which they are achieved, will become clearer and clearer in connection with the following description of the exemplary embodiments that are be explained in more detail in connection with the drawings. The following are shown in a schematic representation:

1 shows a carrier with an optoelectronic semiconductor chip arranged thereon;

Figure 2 shows the carrier after placing an embedding material over the carrier;

Fig. 3 embedded in the embedding material Parti angle;

4 shows the carrier and the embedding material during application of an inhomogeneous electric field;

5 shows the embedding material with particles aligned at least partially along a preferred direction;

6 shows light scattering on the particles embedded in the embedding material; and

7 shows the carrier with a plurality of optoelectronic semiconductor chips arranged thereon.

FIG. 1 shows a schematic sectional side view of a still unfinished optoelectronic component 10 in a processing state during its manufacture. The optoelectronic component can, for example, be an LED display device, for example an LED screen (LED display). In this case, FIG. 1 shows only part of the optoelectronic component. However, the optoelectronic component can also be another LED component, for example.

FIG. 1 shows a carrier 100 with a substantially planar upper side 101 in a schematic sectional side view. The carrier 100 can also be referred to as a backplane. An electrical contact surface 110 is arranged on the upper side 101 of the carrier 100 . On the electrical contact surface 110, an optoelectronic semiconductor chip 200 has been arranged. The optoelectronic semiconductor chip 200 is designed to emit electromagnetic radiation, for example visible light. The optoelectronic semiconductor chip 200 can be a light-emitting diode chip (LED chip), for example. In particular, the optoelectronic semiconductor chip 200 can be embodied, for example, as a micro-LED chip with very compact external dimensions.

The optoelectronic semiconductor chip 200 has an upper side

201 and the top 201 opposite underside

202 on. The optoelectronic semiconductor chip 200 has been arranged on the electrical contact surface 110 of the carrier 100 in such a way that the underside 202 of the optoelectronic semiconductor chip 200 is in contact with the electrical contact surface 110 . As a result, the underside 202 of the optoelectronic semiconductor chip 200 is electrically contacted via the electrical contact surface 110 of the carrier 100 .

FIG. 2 shows a schematic, sectional side view of the still unfinished optoelectronic component in a processing status subsequent to the illustration in FIG.

An embedding material 300 has been placed over the top 101 of the carrier 100 . In this case, the optoelectronic semiconductor chip 200 has been at least partially embedded in the embedding material 300 . In the example shown in Figure 2, the optoelectronic semiconductor chip has been completely embedded in embedding material 300 in such a way that top side 201 and also the side surfaces of optoelectronic semiconductor chip 200 extending between top side 201 and bottom side 202 are completely covered by embedding material 300 are. The embedding material 300 has a top surface 101 of the carrier 100 bordering bottom 302 and a abge of the carrier 100 facing top 301 on.

The encapsulating material 300 may include a silicone, an acrylic, or an epoxy, for example. The encapsulant material 300 has been placed in a viscous form over the carrier 100, for example by means of a casting process.

The embedding material 300 has embedded particles 310 . The particles 310 are intended to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip 200 . For this purpose, the particles 310 have a material with good optical reflection properties. The particles 310 may include TiO 2 (titanium dioxide), for example.

Figure 3 shows a highly schematic representation of one of the particles 310 embedded in the embedding material 300.

The particles 310 embedded in the embedding material 300 are all designed like the particle 310 shown in FIG. 3. The particle 310 has a shape that deviates from a spherical shape. It is particularly expedient if the particle 310 has an approximately ellipsoidal shape 320, as shown in FIG. The ellipsoidal particle 310 has a first semi-axis 321 , a second semi-axis 322 and a third semi-axis 323 . The first semi-axis 321 is larger than the second semi-axis 322 or the same size as the second semi-axis 322 and larger than the third semi-axis 323. The first semi-axis 321 thus lies on a main axis 330 of the particle 310. The third semi-axis 323 is shorter than the second Semi-axis 322 or just as long as the second semi-axis 322. The third semi-axis 323 thus lies on a secondary axis 335 of the ellipsoidal particle 310. The ellipsoidal particle 310 thus has a shape that is elongated along the main axis.

A section of the surface of the particle 310 bordering the point of intersection of the secondary axis 335 is less strong curved than other portions of the surface of particle 310 and forms a reflective surface 340 of particle 310.

After placing the encapsulant material 300 over the carrier 100, the particles 310 are randomly oriented in the encapsulant material 300. FIG. This means that the main axes 330 and the secondary axes 335 of the individual particles 310 point in random directions in space. This is shown schematically in FIG.

FIG. 4 shows a schematic sectional side view of the still unfinished optoelectronic component during the implementation of a processing step that follows the representation in FIG.

An electrode 400 has been placed over the top 301 of the encapsulant material 300 . In this case, the electrode 400 is also arranged over the upper side 201 of the optoelectronic semiconductor chip 200 . The electrode 400 has a plate shape and is oriented parallel to the top 101 of the carrier 100 . The electrode 400 is thus also oriented parallel to the electrical contact surface 110 arranged on the upper side 101 of the carrier 100 . The electrode 400 has an area 401 facing the embedding material 300 and the carrier 100 which is larger than an area 111 of the electrical contact area 110 .

In the processing step shown schematically in FIG. 4, an inhomogeneous electric field 500 is applied between the electric contact surface 110 and the electrode 400 . This is done by applying an electrical voltage 520 between the electrical contact surface 110 and the electrode 400 . The difference in size between the surface 111 of the electrical contact surface 110 and the surface 401 of the electrode 400 forms the inhomogeneous electrical field 500 between the electrical contact surface 110 and the electrode 400 . Field lines 510 of the inhomogeneous electric field 500 run from the electrical contact surface 110 to the electrode 400 and widen in the process from the electrical contact surface 110 in the direction of the electrode 400 in the shape of a bowl.

The electrical voltage 520 can be a direct voltage.

In this case, the inhomogeneous electric field 500 is a static electric field. However, it can be expedient to apply the electrical voltage 520 as an alternating voltage, so that the inhomogeneous electrical field 500 is an alternating electrical field. The inhomogeneous electric field 500 can have a frequency between 1 Hz and 1 MHz, for example. A frequency between 1 kHz and 10 kHz can be particularly useful.

The particles 310 embedded in the embedding material 300 can be electrically polarized by the inhomogeneous electric field 500 . The polarizability of the particles 310 can be particularly pronounced when the inhomogeneous electric field 500 is an alternating electric field, in particular an alternating electric field with a frequency from the frequency range mentioned above.

The particles 310 embedded in the embedding material 300 are at least partially reoriented in the inhomogeneous electric field 500 by the effect of dielectrophoresis. The reorientation of the particles 310 having the ellipsoidal shape 320 takes place in such a way that the main axes 330 of the particles 310 are at least partially aligned with the field lines 510 of the inhomogeneous electric field 500 . In this case, not all of the particles 310 contained in the embedding material 300 have to be aligned, and the particles 310 also do not have to be fully aligned with the field lines 510 . However, it is favorable if the largest possible proportion of the particles 310 embedded in the embedding material 300 is aligned as completely as possible with the field lines 510 of the inhomogeneous electric field 500 . FIG. 5 shows a schematic, sectional side view of an optoelectronic component 10 that has now been completely produced, in a processing status following the illustration in FIG. In the processing status shown in FIG. 5, the application of the inhomogeneous electric field 500 has been completed and the electrode 400 has been removed again.

The particles 310 embedded in the embedding material 300 have been reoriented by the inhomogeneous electric field 500 and at least partially aligned with the field lines 510 of the homogeneous electric field 500 such that the main axes 330 of the aligned particles 310 are aligned parallel to the field lines 510 to have. This means that the main axis 330 of the aligned particles is oriented towards the upper side 301 of the embedding material 300 and away from the optoelectronic semiconductor chip 200, respectively. It is expedient if at least a majority of the particles 310 embedded in the embedding material 300 have been aligned in this way by the application of the inhomogeneous electric field 500 .

In addition, at least part of the particles 310 has been reoriented and aligned by the inhomogeneous electric field 500 in such a way that the minor axis 335 of these particles is oriented towards the upper side 301 of the embedding material 300 and towards the optoelectronic semiconductor chip 200 . This means that in the case of these particles 310 the reflective surface 340 is oriented towards the upper side 301 of the embedding material 300 and towards the optoelectronic semiconductor chip 200 . It is expedient if a majority of the particles 310 embedded in the embedding material 300 have been aligned in this way by the inhomogeneous electric field 500 .

The particles 310 embedded in the embedding material 300 have thus been reoriented by the inhomogeneous electric field 500 such that these particles 310 are now at least partially aligned along a preferred direction. After switching off the inhomogeneous electric field 500 and removing the electrode 400, a further processing step has been carried out in order to harden the embedding material 300. FIG. The embedding material 300 can be cured, for example, by a heating process. The curing of the embedding material 300 has fixed the particles 310 embedded in the embedding material 300 in their orientation, which is aligned by the inhomogeneous electric field. Alternatively, the embedding material 300 can also be cured before the inhomogeneous electric field 500 is switched off.

A part of the embedding material 300 has then been removed in order to expose the top side 201 of the optoelectronic semiconductor chip 200 . The part of the embedding material 300 can be removed by etching, for example. In this case, the embedding material 300 is etched back from its top side 301 until the top side 201 of the optoelectronic semiconductor chip 200 is exposed.

A contact layer 600 has then been arranged on the recessed top side 301 of the embedding material 300 and the exposed top side 201 of the optoelectronic semiconductor chip 200 in order to electrically contact the top side 201 of the optoelectronic semiconductor chip 200. The contact layer 600 can, for example, be ITO (indium tin oxide ) exhibit. Alternatively, however, the contacting of the upper side 201 of the optoelectronic semiconductor chip 200 can also take place in a different way. In this case, the contact layer 600 can be omitted.

In a subsequent processing step, a blocking layer 610 has been formed over the top 301 of the encapsulant material 300 and the contact layer 600 . The blocking layer 610 comprises an opaque material. The blocking layer 610 has an opening 615 above the top side 201 of the optoelectronic semiconductor chip 200 . As a result, light emitted by the optoelectronic semiconductor chip 200 can emerge from the optoelectronic component 10 in the area of the opening 615, while light in the area of the blocking layer 610 is shaded. The blocking layer 610 can also be omitted.

In a further processing step, a cover layer 620 has been arranged over the top 301 of the encapsulating material 300, the contact layer 600 and the blocking layer 610. FIG. The cover layer 620 comprises an optically transparent material, such as a silicone, an epoxy, or an acrylic. The covering layer 620 serves to protect the optoelectronic component 10. The covering layer 620 can be omitted.

The covering layer 620 forms an upper side 11 of the completely processed optoelectronic component 10. The carrier 100 forms an underside 12 of the optoelectronic component 10.

FIG. 6 shows the optoelectronic component 10 in a schematic representation during its operation. Electromagnetic radiation 220, for example visible light, is emitted in an active layer 210 of the optoelectronic semiconductor chip 200. Electromagnetic radiation 220 emitted in the direction of the top 201 of the optoelectronic semiconductor chip 200 can exit directly through the top 201 of the optoelectronic semiconductor chip 200, the opening 615 of the blocking layer 610 and the top 11 of the optoelectronic component 10's.

In contrast, electromagnetic radiation 220 emitted in the lateral direction enters the embedding material 300 and there strikes the particles 310 embedded in the embedding material 300. Due to the alignment of at least part of the particles 310, the electromagnetic radiation 220 strikes the reflective surfaces 340 of the particles 310 and is on the reflective surfaces 340 towards the top 301 of the embedding material 300 is reflected. The electromagnetic radiation 320 emerges from the embedding material 300 at the top 301 of the embedding material 300 and passes through the opening 615 in the blocking layer 610 to the top 11 of the optoelectronic component 10, where it is emitted. The alignment of the particles 310 along the preferred direction described causes the electromagnetic radiation 220 emitted in the lateral direction by the optoelectronic semiconductor chip 200 to be scattered at the particles 310 not in all spatial directions isotropically, but preferably in the direction of the upper side 11 of the optoelectronic component 10 .

In addition to the optoelectronic semiconductor chip 200 shown in FIG. 6, the optoelectronic component 10 can also have further optoelectronic semiconductor chips. This is e.g. B. the case when the optoelectronic component 10 is a display device on. In this case, the representation of Figure 6 shows only part of the optoelectronic component 10.

FIG. 7 shows a schematic sectional side view of the carrier 100 in a case in which it is designed to accommodate a plurality of optoelectronic semiconductor chips 200. The top 101 of the carrier has a plurality of electrical contact pads 110 spaced apart from one another in a regular array. An optoelectronic semiconductor chip 200 has been arranged on each electrical contact surface 110, as was described with reference to FIG.

The embedding material was then arranged over the upper side 101 of the carrier 100, the plurality of optoelectronic semiconductor chips 200 having been embedded together in the material 300 embedding material. The particles 310 contained in the embedding material 300 are not shown in FIG. 7 for the sake of clarity. As per the figure 2, the particles 310 in the embedding material 300 are initially randomly oriented.

Then the electrode 400 was placed over the top 301 of the encapsulant 300 . In the example shown in FIG. 7, the area 401 of the electrode 400 is so large that the electrode 400 extends over all of the optoelectronic semiconductor chips 200 arranged on the carrier 100 .

In the next processing step, an electrical voltage is applied between the electrode 400 and all electrical contact surfaces 110 in order to form the inhomogeneous electrical field 500 between the electrical contact surfaces 110 and the electrode 400 . As a result, the particles 310 in the vicinity of each optoelectronic semiconductor chip 200 are reoriented as was described with reference to FIGS.

The further processing of the optoelectronic component 10 takes place as described with reference to FIGS.

If the optoelectronic component 10 has only one optoelectronic semiconductor chip 200, the production can still take place as described with reference to FIG. In this case, the method enables parallel production of a plurality of optoelectronic components 10 of the same type. After the curing of the embedding material 300 and further optional processing steps, there is then a further step for dividing the carrier 100 and the embedding material 300 along the lines shown schematically in Figure 7 Separation areas 700 to separate the individual optoelectronic component 10's. Each optoelectronic component 10 then comprises part of the carrier 100 shown in Figure 7, each having an electrical contact surface 110 and an optoelectronic semiconductor chip 200 arranged thereon. The invention has been illustrated and described in more detail with reference to the preferred exemplary embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations can be derived from this by a person skilled in the art without leaving the protective scope of the invention.

REFERENCE LIST

10 optoelectronic component

11 top

12 bottom

100 carriers

101 top

110 electrical contact area

111 area

200 optoelectronic semiconductor chip

201 top

202 underside 210 active layer

220 electromagnetic radiation

300 embedding material

301 top

302 underside

310 particles

320 ellipsoid shape

321 first semi-axis

322 second semi-axis

323 third semi-axis 330 main axis

335 minor axis

340 reflective surface

400 electrode

401 area

500 inhomogeneous electric field

510 field line

520 electrical voltage

600 contact layer 610 blocking layer

615 opening

620 cover layer 700 separation area

Claims

PATENT CLAIMS

1. A method for producing an optoelectronic component (10) with the following steps:

- Providing a carrier (100) with an electrical's contact surface (110);

- Arranging an optoelectronic semiconductor chip (200) on the electrical contact surface (110) of the carrier (100);

- Arranging an encapsulating material (300) over the Trä ger (100), the encapsulating material (300) having embedded particles (310), wherein the optoelectronic semiconductor chip (200) at least partially in the encapsulating material (300) is embedded;

- Arranging an electrode (400) over the optoelectronic's semiconductor chip (200) and the encapsulating material (300);

- Applying an inhomogeneous electrical field (500) between the electrical contact surface's (110) and the electrode (400), the particles (310) being at least partially reoriented by the electrical cal field (500);

- Hardening of the embedding material (300).

2. The method according to claim 1, wherein the particles (310) are reoriented so that they are at least partially aligned with field lines (510) of the inhomogeneous electric field (500).

3. The method as claimed in one of the preceding claims, in which the particles (310) have a shape which deviates from a spherical shape, in particular an ellipsoidal shape (320).

4. The method according to any one of the preceding claims, wherein the particles (310) are electrically polarizable.

5. The method according to any one of the preceding claims, wherein the electric field (500) is applied as an alternating electric field, in particular an alternating field with a frequency between 1 Hz and 1 MHz, in particular an alternating field with a frequency between 1 kHz and 10 kHz.

6. The method according to any one of the preceding claims, wherein the electrode (400) has a plate shape and is arranged parallel to the carrier (100).

7. The method according to any one of the preceding claims, wherein the electrode (400) has a larger area (401) than the electrical contact area (110).

8. The method according to any one of the preceding claims, wherein the particles (310) comprise TiO 2 .

9. The method according to any one of the preceding claims, wherein the encapsulating material (300) comprises a silicone, an acryl or an epoxy.

10. The method according to any one of the preceding claims, wherein the carrier (100) is provided with a plurality of electrical contact surfaces (110), wherein a plurality of optoelectronic semiconductor chips (200) are arranged on the plurality of electrical contact surfaces (110), wherein the plurality of optoelectronic semiconductor chips ( 200) are embedded together in the embedding material (300), the electrode (400) being arranged over the plurality of optoelectronic African semiconductor chips (200), the inhomogeneous electric field (500) between the plurality of electrical contact surfaces (110) and the elec rode (400) is created.

11. The method according to claim 10, wherein after the curing of the encapsulation material (300) the following step is performed:

- Cutting the carrier (100) and the embedding material than (300) in order to separate the optoelectronic component (10).

12. Optoelectronic component (10) with a carrier (100) with an electrical contact surface (110), with an optoelectronic semiconductor chip (200) being arranged on the electrical contact surface (110), with an embedding material ( 300) is arranged with an upper side (301), the embedding material (300) having embedded particles (310), the optoelectronic semiconductor chip (200) being at least partially embedded in the embedding material (300), the particles (310) are at least partially aligned along egg ner preferred direction.

13. Optoelectronic component (10) according to claim 12, wherein a majority of the particles (310) have a major axis (330) oriented towards the top (301) of the embedding material (300) and away from the optoelectronic semiconductor chip (200). is.

14. Optoelectronic component (10) according to one of claims 12 and 13, wherein a majority of the particles (310) have a minor axis (335) in the direction of the top (301) of the embedding material (300) and to the optoelectronic semiconductor chip (200) is oriented towards.