WO2022103085A1

WO2022103085A1 - Measurement system for process monitoring

Info

Publication number: WO2022103085A1
Application number: PCT/KR2021/016020
Authority: WO
Inventors: 서정환
Original assignee: 홍익대학교 산학협력단
Priority date: 2020-11-16
Filing date: 2021-11-05
Publication date: 2022-05-19
Also published as: US20240019343A1

Abstract

A measurement system capable of measuring the process state of a processing device which processes a component in a chamber and thus generates a gaseous mixture including a gaseous material, comprises: a sampling unit that selectively communicates with an exhaust pipe for exhausting the gas mixture including the gaseous material from the chamber, and samples the gas mixture from the exhaust pipe for a predetermined time or by a predetermined volume; and a detection unit that separates and detects each component of the gaseous material included in the gas mixture sampled by the sampling unit.

Description

Metrology systems for process monitoring

The present disclosure relates to a metrology system, and more particularly, to a metrology system for monitoring process completion for a component (particularly a semiconductor component) processed in a chamber.

In the semiconductor manufacturing process, processes such as cleaning and etching that treat the surface of semiconductor parts such as wafers occupies a very important part in securing product yield and precision. In general, using plasma and UV ozone, cleaning and etching processes of semiconductor parts are performed.

In order to check the state of the wafer whether this process has been completed properly, after the process is completed, an expensive (hundreds to billions of billions) ToF (Time of Flight)-SIMS (Secondary Ion Mass Spectroscopy) method is used to analyze the surface composition of the wafer after the process is completed. are sometimes analyzed.

The TOF-SIMS method is a method to obtain chemical components and surface structures by analyzing the cations or anions emitted while striking the surface with primary ions. Since it is not miniaturized, there is a limit to detection in the field. In addition, in order to utilize the TOF-SIMS method, since the semiconductor component must be inspected after the process of the semiconductor component is completed, real-time monitoring is impossible.

Therefore, it is impossible to perform customized optimal process control by grasping the progress status of the actual process in real time.

As a device for monitoring a process state in real time during a semiconductor process, a residual gas analyzer (RGA) is sometimes used. However, RGA is also very expensive, it is impossible to analyze the gas mixture, and there are disadvantages in that the object is limited to a high vacuum chamber. RGA is only partially utilized in the deposition process.

As such, in the prior art, during the process, in the main process of the semiconductor processing process, such as an etching or cleaning process, whether a residual material exists on the surface of a semiconductor component, the control state of the gaseous material used in the process, whether leakage A device for measuring the back in real time (in-situ) is non-existent due to technical and price problems.

Therefore, since it causes a decrease in manufacturing precision and yield of semiconductor parts, an increase in manufacturing cost, etc., countermeasures are urgently needed.

An object of the present disclosure is to provide a measurement system that can utilize a semiconductor processing apparatus such as a conventional plasma cleaning equipment or an etching equipment as it is, and can grasp a process status in real time.

According to an embodiment of the present invention, a measurement system capable of measuring a process state of a processing apparatus for generating a gas mixture including a gaseous material by processing a component in a chamber, the gas mixture including the gaseous material from the chamber A sampling unit that selectively communicates with an exhaust pipe for exhausting the gas, a sampling unit for sampling the gas mixture from the exhaust pipe for a predetermined time or a predetermined volume, and a detection unit for separating and detecting gaseous substances included in the gas mixture sampled by the sampling unit for each component include

According to an embodiment, a bypass pipe branched from the exhaust pipe and connected again to the exhaust pipe is connected to the exhaust pipe, and the sampling unit selectively communicates with the bypass pipe to selectively communicate with the exhaust pipe.

According to an embodiment, the bypass pipe is formed by connecting an upstream bypass pipe and a downstream bypass pipe through a multi-port valve, and the multi-port valve is a direct connection between the upstream bypass pipe and the downstream bypass pipe. a sampling connection operation of blocking communication, communicating the upstream bypass pipe and the inlet of the sampling unit, and communicating the downstream bypass pipe and the outlet of the sampling unit, and connecting the upstream bypass pipe and the downstream bypass pipe It is formed to directly communicate with each other and to perform a sampling cutoff operation of blocking communication between the bypass pipe and the sampling unit.

According to an embodiment, the multi-port valve is configured to perform a gas delivery operation for communicating the outlet of the sampling unit with the detection unit after the sampling cutoff operation or simultaneously with the sampling cutoff operation.

According to an embodiment, the multi-port valve communicates the sampling unit with the carrier gas tank during the gas delivery operation, and causes the gas mixture to flow to the detection unit by the carrier gas discharged from the carrier gas tank.

According to an embodiment, the multi-port valve communicates the carrier gas tank and the detection unit except during the gas delivery operation.

According to an embodiment, a portion of the tip of the upstream bypass pipe is inserted into the exhaust pipe to guide a portion of the gas mixture flowing through the exhaust pipe into the upstream bypass pipe.

According to an embodiment, the exhaust pipe is formed by connecting an upstream exhaust pipe and a downstream exhaust pipe through a multi-port valve, and the multi-port valve blocks direct communication between the upstream exhaust pipe and the downstream exhaust pipe, and the upstream exhaust pipe and the A sampling connection operation of communicating the inlet of the sampling unit and communicating the downstream exhaust pipe and the outlet of the sampling unit, and a sampling blocking operation of directly communicating the upstream exhaust pipe and the downstream exhaust pipe, and blocking the communication between the exhaust pipe and the sampling unit is formed

According to an embodiment, the sampling unit includes a sampler module capable of storing the gas mixture by a predetermined volume.

According to an embodiment, the detection unit includes a separation module for separating the gaseous material included in the gas mixture for each component, and a sensor module for detecting the gaseous material flowing out from the separation module.

According to an embodiment, the separation module includes a separation path in which the gaseous material moves with a different movement speed inside depending on the component, and is separated for each component and flows out with a time difference, the sensor module is the separation The time and concentration at which the gaseous material leaked from the path is sensed is measured.

According to an embodiment, the separation path has a column shape that is bent in a labyrinth shape in a predetermined space.

According to an embodiment, the inner surface of the separation path is coated with a porous material, and the gaseous material flows along the separation path while repeating attachment and separation with the porous material.

According to an embodiment, the sensor module detects the concentration of the gaseous material by applying ultraviolet light to the gaseous material flowing out from the separation module to measure a voltage change due to electrons dissociating from the gaseous material.

According to an embodiment, the measurement system includes a concentration module that filters and stores the gaseous material included in the gas mixture sampled by the sampling unit.

According to an embodiment, the concentration module is disposed in one of the sampling unit and the detection unit.

According to an embodiment, the concentration module includes a concentration chamber and an adsorbent capable of collecting the gaseous material filled in the concentration chamber.

According to an embodiment, a plurality of pillars on which the adsorbent can be supported are formed in the concentration chamber.

According to an embodiment, the concentration module, the separation module and the sensor module are configured in one portable device.

According to an embodiment, a pump for generating a pressure for discharging the gas mixture from the chamber is connected to the exhaust pipe, and an inlet and an outlet of the sampling unit selectively communicate with the exhaust pipe between the chamber and the pump .

According to one embodiment, a pump is connected to the exhaust pipe for generating a pressure for discharging the gas mixture from the chamber, and the bypass pipe has an inlet and an outlet connected to the exhaust pipe between the chamber and the pump. .

According to an embodiment, the component is a semiconductor component, and the processing apparatus is a semiconductor processing apparatus that performs etching or cleaning processing on the semiconductor component.

1 to 4 are schematic system diagrams of a measurement system according to an embodiment of the present invention, and are diagrams for sequentially explaining the operation of the measurement system.

5A and 5B show examples of connection types of an upstream bypass pipe connected to an exhaust pipe in a measurement system according to an embodiment of the present invention.

6 is a schematic conceptual diagram of a detection apparatus according to an embodiment of the present invention.

7 is an enlarged view of a concentration module formed in the detection device of FIG. 6 .

FIG. 8 is a rear view of a substrate coupled to the detection device of FIG. 6 ;

FIG. 9 schematically shows the inside of a separation module formed in the detection device of FIG. 6 .

FIG. 10 is a schematic diagram illustrating a process of separating and detecting a gaseous material using the detection device of FIG. 6 .

11 is a graph illustrating a detection result detected by the measurement system according to the present embodiment.

12 is a schematic system diagram of a measurement system according to a modified example of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Although the present invention has been described with reference to the embodiment shown in the drawings, which is described as one embodiment, the technical idea of the present invention and its core configuration and operation are not limited thereby.

As used herein, "upstream" refers to the side through which a fluid flows in one path, and "downstream" refers to the side opposite to the upstream.

(Example)

1 to 4 are schematic system diagrams of the measurement system 10 according to an embodiment of the present invention, and are diagrams for sequentially explaining the operation of the measurement system 10 .

The metrology system 10 according to the present embodiment is a metrology capable of detecting a process state for a part in a processing apparatus that processes a part in a chamber to generate a gas mixture 6 containing a gaseous material 60 . it is a system

The processing apparatus 1 according to the present embodiment is a semiconductor processing apparatus that performs a plasma cleaning process of cleaning a wafer 3 that is a semiconductor component through a plasma generator (electrode) 2 in a chamber 9 in a vacuum state. am.

When the plasma cleaning process starts, a cleaning gas 8 (eg, O ₂ ) flows into the chamber 9 in a vacuum state from the external cleaning gas tank 5 .

In the cleaning gas 8 ionized by the plasma generated by the plasma generator 2 , the compounds on the surface of the wafer 3 react with each other to generate the gaseous material 60 , which is an organic compound of various components.

The gas mixture 6 containing the gaseous material 60 is discharged to the outside through the exhaust pipe 20 communicating with the chamber 9 . On the downstream side of the exhaust pipe 20 is connected a pump 4 for creating a vacuum in the chamber 9 and providing pressure for discharging the gas mixture 6 .

The configuration of a semiconductor processing apparatus for performing a plasma cleaning process is well known, and a detailed description thereof will be omitted herein.

The measurement system 10 according to the present embodiment analyzes the gas mixture 6 discharged from the processing device 1 to detect the gaseous material 60 included in the gas mixture 6 in substantially real time. is composed

Referring to FIG. 1 , a measurement system 10 selectively communicates with an exhaust pipe 20 of a processing device 1 to sample a gas mixture 6 from the exhaust pipe 20 for a predetermined time or a predetermined volume ( 11) and a detection unit 12 for separately detecting the gaseous material 60 included in the gas mixture 6 sampled by the sampling unit 11 .

The sampling unit 11 according to the present embodiment includes an inlet 101 through which the gas mixture 6 flows, an outlet 102 through which the gas mixture 6 flows, and an inlet 101 and an outlet ( and a sampler module 103 disposed between 102 .

The inlet portion 101 and the outlet portion 102 have a long conduit shape, and the sampler module 103 has a shape formed by twisting the conduit shape into a spiral.

Here, since the sampler module 103 is replaceable in another form, it has been described separately from the inlet 101 and the outlet 102 for convenience. twisted to form

As the sampler module 103 is formed in a spiral shape, the volume of the gas mixture 6 sampled by the sampling unit 11 may be increased.

The sampling unit 11 according to the present embodiment is in the form of a conduit having both ends open, and while the sampling unit 11 communicates with the exhaust pipe 20 , the gas mixture 6 continues to flow in the conduit. That is, the inside of the sampling unit 11 is always filled with the gas mixture 6 of the same volume.

Therefore, when the communication between the sampling unit 11 and the exhaust pipe 20 is cut off, the gas mixture 6 of the same volume is always sampled inside the sampling unit 11 regardless of the timing.

The detection unit 12 according to the present embodiment includes a concentration module 200 that filters and stores the gaseous material 60 included in the gas mixture 6 sampled by the sampling unit 11, and a concentration module 20 in the concentration module 20 . It includes a separation module 300 for separating the concentrated gaseous material 60 for each component, and a sensor module 400 for detecting the gaseous material 60 flowing out from the separation module 300 . Each module of the detection unit 12 will be described in more detail later.

As shown in FIG. 1 , according to the present embodiment, the bypass pipe 30 branched from the exhaust pipe 20 and connected again to the exhaust pipe 20 is connected to the exhaust pipe 20 . According to this embodiment, the diameter of the bypass pipe 30 is substantially equal to the diameter of the sampling unit 11 .

According to the present embodiment, the sampling unit 11 selectively communicates with the bypass pipe 30 to selectively communicate with the exhaust pipe 20 .

According to this embodiment, the bypass pipe 30 has an inlet and an outlet connected to the exhaust pipe 20 between the chamber 9 and the pump 4 . That is, the sampling unit 11 communicates with the exhaust pipe 20 on the upstream side of the pump 4 .

Accordingly, it is possible to prevent the gas mixture 6 being sampled from being contaminated by the oil component discharged from the pump 4 or the like. In addition, by replacing the exhaust pipe 20 between the chamber 9 and the pump 4, which is relatively easy to change the structure, to install the bypass pipe 30, the measurement system 10 can be easily installed in the existing processing device 1 can be applied.

More specifically, the bypass pipe 30 is composed of an upstream bypass pipe 31 and a downstream bypass pipe 32 connected to the exhaust pipe 20, the upstream bypass pipe 31 and the downstream bypass pipe ( 32 is selectively connected via a multi-port valve (hereinafter also referred to as “valve”) 40 disposed therebetween.

5A and 5B show examples of the connection form of the upstream bypass pipe 31 connected to the exhaust pipe 20 . 5A and 5B, fasteners and sealing members between the upstream bypass pipe 31 and the exhaust pipe 20 are omitted.

As shown in FIG. 5A , according to one embodiment, a portion 33 of the tip of the upstream bypass pipe 31 is inserted into the exhaust pipe 20 . A portion 33 of the distal end inserted into the exhaust pipe 20 has a cylindrical tubular shape like other parts of the upstream bypass pipe 31 , and its tip is bent upstream of the exhaust pipe 20 . An inlet 34 is opened at the tip of the upstream bypass pipe 31 to face the flow direction of the gas mixture 6 . The position of the inlet 34 may be located in the center of the upstream bypass pipe 31, or may be deviated from the center.

Since the inlet 34 faces the flow direction of the gas mixture 60 , a portion of the gas mixture 6 is inserted into the interior of the exhaust pipe 20 , and the upstream bypass pipe 31 is guided inward. The gas mixture 6 flowing through the exhaust pipe 20 flows into the upstream bypass pipe 31 by its flow velocity (see arrow). Therefore, even when the pressure of the chamber 9 is extremely small as in the present embodiment, it is possible to prevent the gas mixture 6 from flowing into the upstream bypass pipe 31 due to the pressure difference.

Alternatively, as shown in FIG. 5B , a portion 33 ′ of the distal end of the upstream bypass pipe 31 inserted into the exhaust pipe 20 has a tongue gently bent toward the upstream side of the exhaust pipe 20 . (tongue) shape may be sufficient.

A part of the gas mixture 6 flowing through the exhaust pipe 20 collides with the tongue-shaped tip part 33', and is naturally guided into the exhaust upstream bypass pipe 31 along a smooth curved surface. The gas mixture 6 is introduced into the inlet 34' by its flow velocity and flows into the upstream bypass pipe 31 (see arrow). Therefore, even when the pressure of the chamber 9 is extremely small as in the present embodiment, it is possible to prevent the gas mixture 6 from flowing into the upstream bypass pipe 31 due to the pressure difference.

According to this embodiment, a part of the tip of the upstream bypass pipe 31 is inserted into the exhaust pipe 20, but when the pressure in the chamber 9 is sufficiently large, the tip of the upstream bypass pipe 31 is It may be prevented from being inserted into the exhaust pipe 20 .

Referring back to FIG. 1 , the valve 40 according to the present embodiment is a six-port valve having six ports of first to sixth ports 41 to 46 .

The first port 41 of the valve 40 is connected to the outlet of the upstream bypass pipe 31 , and the sixth port 46 is connected to the inlet of the downstream bypass pipe 32 . The second port 42 of the valve 40 is connected to the inlet portion 101 of the sampling unit 11 , and the fifth port 45 is connected to the outlet portion 102 of the sampling unit 11 .

A third port 43 of the valve 40 is connected to a conduit 51 connected to the carrier gas tank 7 , and a fourth port 44 of the valve 40 is connected to a conduit connected to the enrichment module 200 ( 52) is connected.

The concentration module 200 , the separation module 300 , and the sensor module 400 are communicated with each other by

conduits

53 and 54 .

Hereinafter, an operation of the measurement system 10 for measuring the gaseous material 60 will be described with reference to FIGS. 1 to 4 .

As shown in FIG. 1 , when the plasma cleaning treatment process is started by the processing device 1 , the valve 40 performs a sampling connection operation to sample the gas mixture 6 by the sampling unit 11 . .

Specifically, the control unit (not shown) of the valve 40 connects the first port 41 and the second port 42 to the first port 41 and the second port 42 during the sampling connection operation, and the fifth port 45 and the sixth port 46 . connect the At this time, the communication between the first port 41 and the sixth port 46 is blocked.

Accordingly, direct communication between the upstream bypass pipe 31 and the downstream bypass pipe 32 is blocked, and the upstream bypass pipe 31 and the inlet portion 101 of the sampling unit 11 communicate with each other, and the downstream bypass The pass pipe 32 and the outlet portion 102 of the sampling unit 11 communicate with each other.

When the valve 40 is connected to the sampling operation, a part of the gas mixture 6 flowing through the exhaust pipe 20 flows through the sampling unit 11 through the upstream bypass pipe 31 and through the downstream bypass pipe 32 . It flows back to the exhaust pipe 20 .

According to this embodiment, as shown in FIG. 1 , during the sampling connection operation (other than the gas delivery operation described later), the third port 43 and the fourth port 44 communicate (ie, the carrier gas tank). 70 and the detection unit 12 communicate with each other) so that a carrier gas (eg, N ₂ or H ₂ ) 7 flows toward the detection unit 12 in the carrier gas tank 70 . Thereby, the detection part 12 is maintained by the carrier gas 7 in the clean atmosphere which is not polluted by external air. Carrier gas, such as helium, has very low reactivity with the porous polymer and organic compound mentioned later.

When a predetermined time has elapsed, the control unit of the valve 40 causes the valve 40 to perform a sampling cutoff operation, as shown in FIG. 2 , to block further sampling.

As shown in FIG. 2 , during the sampling cutoff operation, the communication between the first port 41 and the second port 42 is cut off, and the communication between the fifth port 45 and the sixth port 46 is cut off. . At the same time, the first port 41 and the sixth port 46 are in communication.

Accordingly, the gas mixture 6 by the volume determined by the sampling unit 11 is trapped inside the sampling unit 11 .

On the other hand, since the first port 41 and the sixth port 46 communicate with each other, a portion of the gas mixture 6 flowing through the exhaust pipe 20 passes through the upstream bypass pipe 31 and the downstream bypass pipe 32 . It flows back to the exhaust pipe 20 .

According to the present embodiment, since the diameters of the bypass pipe 31 and the conduits of the sampling unit 11 are substantially the same as each other, even if instantaneously switched from the sampling connection operation state to the sampling cutoff operation state, the upstream bypass from the exhaust pipe 20 The amount of gas mixture 6 exiting the pass pipe 31 remains almost unchanged.

If the bypass path is suddenly blocked while a certain amount of the gas mixture 6 is bypassed from the exhaust pipe 20 , an impact due to pressure may occur inside the exhaust pipe 20 . Such a pressure shock may adversely affect the pump 4 , the processing device 1, or the like.

According to this embodiment, even if it is momentarily switched from the sampling connection operation state to the sampling cutoff operation state, the state in which the gas mixture 6 is still bypassed by a certain amount from the exhaust pipe 20 is maintained, so that sudden pressure fluctuations can be suppressed. there is.

In addition, since it is not necessary to stop the operation of the processing device 1 in the entire process of performing the sampling of the gas mixture 6 , it is possible to increase the yield of the semiconductor component.

On the other hand, referring to FIG. 2 , the control unit of the valve 40 according to the present embodiment blocks the communication between the third port 43 and the fourth port 44 after or simultaneously with the sampling cutoff operation, and the fourth port ( 44) and the fifth port 45 to communicate with a gas transfer operation. That is, when the gas delivery operation is performed, the outlet portion 102 of the sampling unit 11 communicates with the detection unit 12 .

Although the gas mixture 6 sampled in the sampling unit 11 may be flowed to the detection unit 12 by a separate pump (not shown) installed downstream of the detection unit 12, according to this embodiment, when the gas delivery operation is performed , the second port 42 and the third port 43 are also communicated. Accordingly, the inlet portion 101 of the sampling portion 11 communicates with the carrier gas tank 70 . As shown in FIG. 2 , the sampled gas mixture 6 is pushed by the carrier gas 7 discharged from the carrier gas tank 70 and flows to the detection unit 12 .

As shown in FIG. 2 , the gas mixture 6 flows to the concentration module 200 , and the gaseous material 60 included in the gas mixture 6 is caught by the concentration module 200 to the concentration module 200 . ) is concentrated and stored in

Thereafter, as shown in FIG. 3 , when energy such as heat is applied to the enrichment module 200 , the gaseous material 60 is discharged from the enrichment module 200 , and the gaseous material 60 is a carrier gas 7 . It flows to the separation module 300 . The separation module 300 separates the gaseous material 60 by its components, and discharges it.

Thereafter, as shown in FIG. 4 , the gaseous material 60 discharged from the separation module 300 is loaded onto the carrier gas 7 at a constant velocity and flows to the sensor module 400 . The sensor module 400 detects the reached gaseous material 60 .

Hereinafter, the configuration of the detection unit 12 and the principle of separating and detecting the gaseous material 60 included in the gas mixture 6 by the detection unit 12 will be described with reference to FIGS. 6 to 11 .

According to the present embodiment, the concentration module 200 , the separation module 300 , and the sensor module 400 constituting the detection unit 12 are miniaturized and integrated into one detection device 120 configured in a portable form. ) is composed of

6 is a schematic conceptual diagram of the detection device 120 .

As shown in FIG. 6 , the detection device 120 has a structure in which the concentration module 200 and the separation module 300 are integrated, the substrate 122 and the sensor module 400 are installed in one body 121 . . Inside the body 121 , a heating wire and a power source (not shown) of the sensor module 400 and a communication device (not shown) for transmitting a signal of the sensor module 400 are embedded. In addition, in the body 121, a memory for storing information such as a library for the time each gaseous material 60 to be described later exits to the separation path 310, and information detected by the sensor module are compared with the library. A processor or the like for deriving In addition, the body 121 may include a speaker or a liquid crystal screen for notifying the operator of the derivation result. However, the functions such as the above memory and processor may be performed by a separate computer, and the detection device 120 may communicate with a separate computer and send the detection result by the sensor module to the computer for processing.

The substrate 122 is formed by bonding a silicon plate (first substrate) and a glass plate (second substrate).

According to this embodiment, the concentration module 200, the separation module 200, and the plurality of conduits 52. 53 connecting them are all deep reactive-ion etching (DRIE) on one side surface of the first substrate. It is formed by deep etching using a process. Accordingly, a nano-sized structure can be precisely formed on the substrate 122 , thereby reducing the overall size of the detection device 120 . The condensing module 200, the separation module 300, and a plurality of conduits 52. 53 connecting them are simultaneously etched in the form of a concave groove on the first substrate, and the second substrate is placed and bonded to close the concave groove to close the upper part. completes the closed structure.

According to this embodiment, the first substrate and the second substrate may be strongly bonded to each other by anodic bonding, which is a bonding method by voltage under atmospheric pressure conditions.

7 is an enlarged view of the concentration module 200 according to the present embodiment.

The enrichment module 200 includes the enrichment chamber 210 formed as a space having a larger volume than the conduit connected thereto.

The enrichment chamber 210 has two opposite unidirectional sides extending in a short direction of the enrichment chamber 210 and two opposite long sides extending in a long direction of the enrichment chamber 210 . It has an approximately long polygonal shape.

The unidirectional side is formed by being bent in an approximately "v" shape so that the center moves away from the long side, and thus the flow of the fluid in the thickening chamber 210 can be uniformly spread.

An inlet conduit 52 through which the gas mixture 6 flows in communication with the enrichment chamber 210 is formed in the central portion of one unidirectional side of the enrichment chamber 210 . An outlet conduit 53 through which gas can escape from the enrichment chamber 210 is formed in the central portion of the other unidirectional side surface of the enrichment chamber 210 .

As used herein, the terms "inlet" and "outlet" are intended to mean different openings through which the fluid can flow into and out of the corresponding conduit, and do not necessarily limit the fluid flowing in and out of the outlet through the inlet from the corresponding conduit. does not That is, in some cases, the fluid from the corresponding pipe may be introduced into the outlet and may be discharged through the inlet.

Inside the enrichment chamber 210, a plurality of pillars 211 are arranged at regular intervals. When the depth reactive ion etching process is used, a plurality of pillars 211 may be formed inside the enrichment chamber 210 by preventing a portion of the enrichment chamber 210 from being etched.

The concentration chamber 210 filters and stores the gaseous material 60 in the gas mixture 6 . To this end, an adsorbent 212 capable of collecting the gaseous material 60 is filled in the enrichment chamber 210 . As the adsorbent 212 , for example, a material such as a carbon compound to which the gaseous material 60 , which is an organic compound, may be attached and captured by van der Waals force may be used.

The adsorbent 212 may be filled in the chamber 110 in advance before bonding the first substrate and the second substrate, or may be filled in the concentration chamber 210 by a gas transfer method. In the case of the gas transfer method, a separate introduction pipe (not shown) may be formed to communicate with the enrichment chamber 210 .

The gaseous material 60 introduced into the enrichment chamber 210 is collected by the adsorbent 212 and concentrated and stored in the enrichment chamber 210 .

In order to flow the gaseous material 60 concentrated and stored in the enrichment chamber 210 out of the enrichment chamber 210 again, the coupling between the adsorbent 212 and the gaseous material 60 must be broken, and this is the detection device according to the present embodiment. 120 includes a heating device for applying heat to the concentration chamber 210 .

8 illustrates a rear surface of the first substrate.

A heating wire 500 that generates heat when power is applied is attached to the rear surface of the first substrate as a chamber heating device. The heating wire 500 is formed on the first substrate corresponding to the position where the enrichment chamber 210 is formed. The heating wire 500 includes a terminal 503 to which a power source can be connected. A temperature sensor 502 capable of measuring a temperature raised by the heating wire 500 may be provided at the center of the heating wire 500 .

By applying power to the heating wire 500 to generate heat, thermal energy capable of dissociating the adsorbent 212 and the gaseous material 60 may be selectively applied to the concentration chamber 210 .

On the other hand, as shown in FIG. 8 , according to this embodiment, a heating wire 600 that selectively applies heat to the separation path 310 to improve the reactivity inside the separation path 310 to be described later is a separation path. It may be formed on the rear surface of the first substrate corresponding to the position of the 310 . Terminals 601 to which power can be applied are formed at both ends of the heating wire 600 .

At this time, the heat applied by the heating wire 501 may be conducted by the first substrate of silicon to unexpectedly apply heat to adjacent components such as the separation path 310 .

In order to prevent such heat conduction as much as possible, according to the present embodiment, a plurality of

slits

311 , 312 , 313 are formed along the circumference of the hot wire 501 and completely penetrate the first substrate.

The conduit 53 in communication with the concentration module 200 communicates with the separation module 300 .

The separation module 300 includes an elongated separation path 310 . The separation path 310 forms a single fluid flow path, and the gaseous material 60 introduced into the separation path 310 is separated for each component while moving along the separation path 310 having a very long path to reduce the time difference. and flows out from the separation path 310 .

According to this embodiment, in order for the separation path 310 to have a long enough path to separate harmful substances, the separation path 310 is arranged to form a single-layered column bent in a labyrinth shape in a predetermined rectangular space. do.

As shown in FIG. 6 , from the entrance of the separation path 310 in fluid communication with the conduit 53 , the separation path 310 is bent to the center of the square space and extended in a kind of coil form, and then coiled again at the center. It extends to the outlet of the separation path 310 by extending in the form. That is, the path length of the separation path 310 can be maximized in a small space while a path extending meandering toward the center in a column shape and a path extending away from the center cross each other adjacently.

In FIG. 6 , although adjacent paths are sufficiently spaced apart for convenience of illustration, the spacing between adjacent paths is formed very densely.

By spacing the paths very densely, for example, separation paths 310 with a cross-sectional area on the order of several nanometers can extend over about 3 m.

9 schematically shows the inside of the separation path 310 according to an embodiment of the present invention.

9, the inner surface of the separation path 310 is coated with a porous material 311 to which the gaseous material 60 can be attached. For example, the porous material 311 may be a porous polymer such as PDMS.

Harmful substances (M), which are organic compounds, are attached to the porous polymer by van der Waals forces. At this time, when the carrier gas 7 flows into the separation path 310 , the gaseous material 60 attached to the porous material 311 is separated from the porous material 311 by the force of the carrier gas 7 and separated from the porous material 311 by a predetermined distance. While flowing, it loses mobility and is again attached to the porous material 311 is repeated.

Since the gaseous material 60 has a different mass and van der Waals force acting on the porous material 311 depending on its components, the gaseous material 60 of different components is the porous material 311 as shown in FIG. 9 . The frequency and distance that it attaches to and then separates and flows are different from each other. That is, the gaseous material 60 moves with a different moving speed inside the separation path 310 depending on the component. For example, the moving speed of the second material 62 among the first material 61 indicated by a triangle and the second material 62 indicated by a circle is faster.

According to this embodiment, since the separation path 310 has a long path reaching about 3 m, the movement distance of the gaseous material 60 injected into the inlet of the separation path 310 is equalized for each component while moving the long path. , and is aggregated for each component and flows out to the outlet of the separation path 310 . Since the gaseous material 60 has a different moving speed depending on the components, the gaseous material 60 is separated for each component and flows out to the outlet of the separation path 310 with a time difference. That is, only by traveling the harmful substances through the separation path 310 without applying electricity, etc., the gaseous substances 60 are separated for each component and flowed out with a time difference.

The porous material 311 may be coated on the separation path 310 before the first substrate and the second substrate are bonded, or may be coated by a gas flow method through a separate introduction pipe (not shown).

The gaseous material 60 sequentially exiting the outlet of the separation path 310 is detected by the sensor module 400 .

The sensor module 400 according to the present embodiment applies ultraviolet (UV) to the gaseous material 60 flowing out from the separation path 310 of the separation module 300 to generate a voltage due to electrons dissociated from the gaseous material 60 . It is a photoionization method (PID) sensor that measures changes. Specifically, when UV is irradiated to a material such as an organic compound, electrons escape and a potential is generated.

The higher the concentration of the substance, the higher the detected potential value, so that the concentration of the substance can be calculated.

The sampled gas mixture 6 pushed against the carrier gas 7 is introduced into the enrichment chamber 210 through a conduit 52 . The gas introduced into the enrichment chamber 210 moves in the long direction of the enrichment chamber 210 . In this process, the gaseous material 60 included in the gas mixture 6 is adsorbed to the adsorbent 212 filled in the concentration chamber 210 .

After concentrating the gaseous material 60 in the concentration chamber 210 for a predetermined time, power is applied to the heating wire 500 to apply heat to the concentration chamber 210 . The gaseous material 60 that has been concentrated and stored in the enrichment chamber 210 by the applied thermal energy is separated from the adsorbent 212 and loaded onto the carrier gas 7 flowing through the enrichment chamber 210 inside the enrichment chamber. exits from (210). Carrier gas 7 with gaseous material 60 flows into separation path 310 .

The high-concentration gaseous material 60 escaping from the enrichment chamber 210 is quickly introduced into the separation path 310 .

That is, the concentration chamber 210 according to the present embodiment serves not only as a reservoir for condensing and storing harmful substances, but also as an injector capable of injecting highly concentrated hazardous substances into the separation path 310 .

10 is a schematic diagram illustrating a process of separating and detecting the gaseous material 60 using the detection device 120 according to the present embodiment.

As described above, the gaseous material 60 in the separation path 310 has a different moving speed depending on its composition.

Through an experiment, a time for exiting the separation path 310 may be obtained in advance according to a component of the gaseous material 60 .

For example, the gas containing only isopropylantipyrine (IPA) could detect the corresponding substance in the sensor module 400 after about 20 seconds. In this way, an experiment can be performed for each of the predictable gaseous materials 60 , and a library of the time at which each gaseous material 60 exits to the separation path 310 can be generated.

Since the

gaseous substances

61 , 62 , 63 , and 64 of different components sequentially flow out through the separation path 310 , the component of the gaseous substance is determined by checking the time when the potential value significantly increases through the sensor module 20 . It can be known, and the concentration of the gaseous material can also be obtained from the potential value.

11 is a graph showing a detection result detected by the measurement system 10 when a plasma cleaning process is performed.

As shown in FIG. 11 , it can be confirmed that a sharp peak in which the potential value rapidly increases at a predetermined time occurs.

The component of the gaseous material detected at the time is already specified. For example, the material of the peak a is pyridine, and the material of the peak b is butanediol.

In addition, it is possible to analyze how much of the gaseous material 60 of which component is contained in the gas mixture 6 discharged from the processing device 1 through the potential value of the component of the gaseous material.

The operator or the control unit of the system can check the component and concentration of the gaseous material 60 to be detected, so that the presence of residues on the cleaned wafer 3 can be continued. When the concentration of the specific material is close to zero or lower than a predetermined reference value, it is determined that there is no residue in the cleaned wafer 3 , and the cleaning process may be terminated.

According to this configuration, even in a state in which the plasma cleaning process is continuously performed (in-situ), the presence and concentration of the gaseous material 60 included in the gas mixture 6 discharged from the processing device 1 is checked and existence can be checked. Accordingly, after the process is finished and the wafer is inspected by a separate device, if the standard is not met, the process of performing the cleaning process again can be omitted, thereby greatly improving the yield of semiconductor components.

In addition, even if the sampling time, the desorption time of the gaseous material 60 in the concentration module, and the separation time are combined, it is extremely short compared to the time to stop the processing apparatus 1, move the wafer for inspection, and then process it again, so substantially " It becomes possible to inspect the processing status of wafers in "real-time".

(variant example)

12 is a schematic system diagram of a metrology system 10' according to a modification of the above embodiment.

In this modified example, compared with the above embodiment, the bypass pipe 30 is not formed, the exhaust pipe 20 is composed of an upstream exhaust pipe 21 and a downstream exhaust pipe 22, and the upstream exhaust pipe 21 and the downstream The difference is that the exhaust pipe 32 is selectively connected via a valve 40 disposed therebetween. The upstream exhaust pipe 21 is connected to the first port 41 of the valve 40 , and the downstream exhaust pipe 22 is connected to the sixth port 46 of the valve 40 .

In addition, this modified example is different from the above embodiment in that the concentration module 200 is not disposed in the detection unit, but is disposed in the sampling unit 12 . The concentration module 200 is disposed between the inlet portion 101 and the outlet portion 102 of the sampling unit 11 and in communication therewith.

According to this variant, the inlet part 101 and the outlet part 102 of the sampling part 11 are selectively communicated with the exhaust pipe 20 between the chamber 9 and the pump 4 . Accordingly, it is possible to prevent contamination of the gas mixture 6 sampled by the oil discharged from the pump 4 or the like. In addition, by replacing the exhaust pipe 20 between the chamber 9 and the pump 4, which is relatively easy to change the structure, to install the bypass pipe 30, the measurement system 10 can be easily installed in the existing processing device 1 can be applied.

During the sampling connection operation of the valve 40 , the first port 41 and the second port 42 are communicated, and the fifth port 45 and the sixth port 46 are communicated. At this time, the communication between the first port 41 and the sixth port 46 is blocked.

Accordingly, direct communication between the upstream exhaust pipe 21 and the downstream exhaust pipe 22 is cut off, the upstream exhaust pipe 21 and the inlet portion 101 of the sampling unit 11 communicate with each other, and the downstream exhaust pipe 22 and the sampling unit are in communication. The outlet portion 102 of (11) communicates.

That is, when the valve 40 is connected to the sampling operation, the path of all the gas mixture 6 passes through the sampling unit 11 .

The gas mixture 6 passing through the sampling unit 11 passes through the concentration module 200 , and the gaseous material 60 contained in the gas mixture 6 is caught by the concentration module 200 and concentrated therein. do.

In the above-described embodiment, if the sampling unit 11 samples the gas mixture 6 by a predetermined volume, in this modified example, the gaseous material 60 is sufficiently concentrated in the concentration module 200, the sampling unit 11 is The operation is controlled to sample the gas mixture 6 for a predetermined period of time.

After a predetermined period of time, the port connection of the valve 40 is changed, the upstream exhaust pipe 21 and the downstream exhaust pipe 22 are directly communicated, and the sampling cutoff operation of blocking the communication between the exhaust pipe 20 and the sampling unit 11 is performed. do

In addition, the control unit of the valve 40 blocks communication between the third port 43 and the fourth port 44 after or simultaneously with the sampling cutoff operation, and communicates the fourth port 44 and the fifth port 45 . and the second port 42 and the third port 43 also communicate with each other to perform a gas transfer operation.

In the gas transfer operation state, when energy such as heat is applied to the enrichment module 200 , the gaseous material 60 is discharged from the enrichment module 200 , and the gaseous material 60 is loaded on the carrier gas 7 to the detection unit 12 . ) to flow.

The gaseous material 60 sequentially flows to a separation module (not shown in FIG. 12 ) and a sensor module (not shown in FIG. 12 ) to separate and detect the gaseous material 60 by its components.

This modified example can be usefully applied when there is not enough space to install the bypass pipe and a separate sampler module, or when the volume of the sampling unit 11 is similar to the volume of the corresponding exhaust pipe, so there is little influence from pressure fluctuations. there is.

(Other Examples)

In the above-described embodiment, although the processing apparatus 1 has been described as being a plasma cleaning processing apparatus of a wafer, it is not limited thereto. The processing device 1 may be a UV ozone-based cleaning device.

In addition, the processing apparatus 1 may be a plasma and UV ozone-based wafer etching processing apparatus. A dry type may be sufficient as an etching method, and a wet type may be sufficient as it.

In addition, the component to be processed may be a semiconductor component other than a wafer, and may not be a semiconductor component. The measurement system 10 according to the present embodiment may be applied to any process, as long as it is a process for generating a gas mixture by reaction of a reactant gas and a component in a chamber.

In addition, according to the embodiment, the detection unit 12 is configured as a portable detection device 120, but is not limited thereto. The concentration module 200 , the separation module 300 , and the sensor module 400 of the detection unit 12 may be configured as separate devices, and each device may not necessarily be miniaturized to be portable.

In addition, according to the above embodiment, although a PID type sensor is used for the sensor module 400, a sensor using a hydrogen ionization detection technique (FID) may be used.

In addition, although the sampler 103 using a spiral conduit is used in the above embodiment, it is not limited thereto. If it is possible to temporarily store the gas mixture 6 by a predetermined volume, for example, a simple straight conduit form or a sample bag may also be used as the sampler.

Further, according to the embodiment, although the sampling unit 11 and the detection unit 12 are in fluid communication, the present invention is not limited thereto. After sampling is performed by the sampling unit 11, the sampling unit 11 may be separated and moved to be connected to the detection unit 12 in another location.

Claims

A metrology system capable of measuring the process state of a processing device that processes a component in a chamber to generate a gaseous mixture comprising a gaseous material, the system comprising:

a sampling unit selectively communicating with an exhaust pipe for exhausting the gas mixture including the gaseous material from the chamber, and sampling the gas mixture from the exhaust pipe for a predetermined time or a predetermined volume; and

and a detection unit configured to separate and detect gaseous substances included in the gas mixture sampled by the sampling unit for each component.
According to claim 1,

A bypass pipe branched from the exhaust pipe and connected again to the exhaust pipe is connected to the exhaust pipe,

The sampling unit selectively communicates with the bypass pipe to selectively communicate with the exhaust pipe.
3. The method of claim 2,

The bypass pipe is formed by connecting an upstream bypass pipe and a downstream bypass pipe through a multi-port valve,

The multi-port valve comprises:

A sampling connection operation of blocking direct communication between the upstream bypass pipe and the downstream bypass pipe, communicating the upstream bypass pipe and the inlet part of the sampling part, and communicating the downstream bypass pipe and the outlet part of the sampling part; ,

and the upstream bypass pipe and the downstream bypass pipe are directly connected to each other, and a sampling cutoff operation of blocking communication between the bypass pipe and the sampling unit is performed.
4. The method of claim 3,

The multi-port valve comprises:

after the sampling interruption operation or simultaneously with the sampling interruption operation;

and a gas transfer operation for communicating the outlet of the sampling unit with the detection unit.
5. The method of claim 4,

The multi-port valve communicates the sampling unit with the carrier gas tank during the gas delivery operation,

and allowing the gas mixture to flow into the detection unit by the carrier gas discharged from the carrier gas tank.
6. The method of claim 5,

The multi-port valve communicates with the carrier gas tank and the detection unit except during the gas delivery operation.
4. The method of claim 3,

A portion of the tip of the upstream bypass pipe is inserted into the exhaust pipe to guide a part of the gas mixture flowing inside the exhaust pipe into the upstream bypass pipe.
According to claim 1,

The exhaust pipe is formed by connecting an upstream exhaust pipe and a downstream exhaust pipe through a multi-port valve,

The multi-port valve comprises:

a sampling connection operation of blocking direct communication between the upstream exhaust pipe and the downstream exhaust pipe, communicating the upstream exhaust pipe and the inlet of the sampling unit, and communicating the downstream exhaust pipe and the outlet of the sampling unit;

and the upstream exhaust pipe and the downstream exhaust pipe are directly connected to each other, and a sampling cutoff operation of blocking communication between the exhaust pipe and the sampling unit is performed.
According to claim 1,

and the sampling unit includes a sampler module capable of storing the gas mixture by a predetermined volume.
According to claim 1,

The detection unit,

A separation module for separating the gaseous material contained in the gas mixture for each component;

and a sensor module for detecting the gaseous material flowing out from the separation module.
11. The method of claim 10,

The separation module,

and a separation path in which the gaseous material moves with a different movement speed inside depending on the component, and is separated for each component and flows out with a time difference,

The sensor module is a measurement system, characterized in that for measuring the time and concentration at which the gaseous material leaked from the separation path is sensed.
12. The method of claim 11,

The separation path is a measurement system, characterized in that it has a column shape that is bent and arranged in a labyrinth shape in a predetermined space.
13. The method of claim 12,

The inner surface of the separation path is coated with a porous material,

The gaseous material repeats attachment and detachment with the porous material and flows along the separation path.
11. The method of claim 10,

The sensor module applies ultraviolet light to the gaseous material flowing out from the separation module to measure a voltage change due to electrons dissociating from the gaseous material to detect the concentration of the gaseous material.
According to claim 1,

and a concentration module for filtering and storing gaseous substances included in the gas mixture sampled by the sampling unit.
16. The method of claim 15,

The concentration module is a measurement system, characterized in that disposed in one of the sampling unit or the detection unit.
16. The method of claim 15,

The concentration module,

A measurement system comprising: a concentration chamber; and an adsorbent capable of collecting the gaseous material filled in the concentration chamber.
18. The method of claim 17,

A measurement system, characterized in that the concentration chamber is formed with a plurality of pillars on which the adsorbent can be supported.
16. The method of claim 15,

The concentration module, the separation module and the sensor module are configured in one portable device.
According to claim 1,

A pump is connected to the exhaust pipe to form a pressure for discharging the gas mixture from the chamber,

An inlet portion and an outlet portion of the sampling portion selectively communicate with the exhaust pipe between the chamber and the pump.
3. The method of claim 2,

A pump is connected to the exhaust pipe to form a pressure for discharging the gas mixture from the chamber,

wherein the bypass pipe has an inlet and an outlet connected to the exhaust pipe between the chamber and the pump.
According to claim 1,

The component is a semiconductor component,

and the processing device is a semiconductor processing device that performs etching or cleaning processing on the semiconductor component.