WO2021153698A1 - Euvレジスト下層膜形成組成物 - Google Patents
Euvレジスト下層膜形成組成物 Download PDFInfo
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- WO2021153698A1 WO2021153698A1 PCT/JP2021/003122 JP2021003122W WO2021153698A1 WO 2021153698 A1 WO2021153698 A1 WO 2021153698A1 JP 2021003122 W JP2021003122 W JP 2021003122W WO 2021153698 A1 WO2021153698 A1 WO 2021153698A1
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- WIPO (PCT)
- Prior art keywords
- group
- underlayer film
- euv resist
- resist underlayer
- euv
- Prior art date
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Definitions
- the present invention relates to a composition used in a lithography process in semiconductor manufacturing, particularly in a state-of-the-art (ArF, EUV, EB, etc.) lithography process.
- the present invention also relates to a method for manufacturing a substrate with a resist pattern to which the resist underlayer film is applied, and a method for manufacturing a semiconductor device.
- a thin film of a photoresist composition is formed on a semiconductor substrate such as a silicon wafer, and an active ray such as ultraviolet rays is irradiated through a mask pattern on which a pattern of a device is drawn to develop the film.
- an active ray such as ultraviolet rays
- This is a processing method for forming fine irregularities corresponding to the pattern on the surface of the substrate by etching the substrate using the obtained photoresist pattern as a protective film.
- Patent Document 1 discloses a resist underlayer film material containing a hydroxy group as a base.
- Patent Document 2 discloses a resist underlayer film forming composition for lithography containing a polymer having an aromatic structure at the end.
- the characteristics required of the resist lower layer film are, for example, that intermixing with the resist film formed on the upper layer does not occur (insoluble in the resist solvent) and that the dry etching rate is faster than that of the resist film. Can be mentioned.
- the line width of the formed resist pattern is 32 nm or less, and the resist underlayer film for EUV exposure is used with a thinner film thickness than before.
- pinholes and agglomeration are likely to occur due to the influence of the substrate surface, the polymer used, and the like, and it is difficult to form a uniform film without defects.
- LWR Line Wids Roughness, line width fluctuation (roughness)
- An object of the present invention is to provide a composition for forming a resist underlayer film capable of forming a desired resist pattern, which solves the above problems, and a resist pattern forming method using the resist underlayer film forming composition. ..
- the present invention includes the following. [1] At the end, the following formula (1): (In the formula (1), X 1 represents —O—, —S—, an ester bond or an amide bond, and R 1 represents an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom. * Indicates the bond to the end of the polymer.)
- An EUV resist underlayer film forming composition containing a polymer containing the structure represented by and an organic solvent.
- the polymer is the formula (2): (In the formula (2), R 2 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Y 1 represents a single bond, —O—, —S—, an ester bond or an amide bond, and A 1 represents an amide bond.
- the reactive groups are hydroxy group, epoxy group, acyl group, acetyl group, formyl group, benzoyl group, carboxy group, carbonyl group, amino group, imino group, cyano group, azo group, azi group, thiol group and sulfo group.
- [5] The EUV resist underlayer film forming composition according to any one of [1] to [4], further comprising a cross-linking catalyst.
- An EUV resist underlayer film which is a fired product of a coating film comprising the EUV resist underlayer film forming composition according to any one of [1] to [6].
- a step of applying the EUV resist underlayer film forming composition according to any one of [1] to [6] on a semiconductor substrate and baking to form an EUV resist underlayer film, an EUV resist underlayer film. Includes a step of applying and baking to form an EUV resist film, a step of exposing the UV resist underlayer film and a semiconductor substrate coated with the EUV resist, and a step of developing and patterning the UV resist film after exposure. , A method for manufacturing a patterned substrate.
- the EUV resist underlayer film forming composition of the present invention has the following formula (1): at the end.
- X 1 represents —O—, —S—, an ester bond or an amide bond
- R 1 represents an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom.
- alkyl group having 1 to 20 carbon atoms examples include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, a cyclopropyl group, an n-butyl group, an i-butyl group, an s-butyl group, and t.
- cyclobutyl group 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl- n-Butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2 -Ethyl-cyclopropyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-
- alkylene group having 1 to 10 carbon atoms examples include methylene group, ethylene group, n-propylene group, isopropylene group, cyclopropylene group, n-butylene group, isobutylene group, s-butylene group, and t-butylene group.
- Cyclobutylene group 1-methyl-cyclopropylene group, 2-methyl-cyclopropylene group, n-pentylene group, 1-methyl-n-butylene group, 2-methyl-n-butylene group, 3-methyl-n- Butylene group, 1,1-dimethyl-n-propylene group, 1,2-dimethyl-n-propylene group, 2,2-dimethyl-n-propylene, 1-ethyl-n-propylene group, cyclopentylene group, 1 -Methyl-cyclobutylene group, 2-methyl-cyclobutylene group, 3-methyl-cyclobutylene group, 1,2-dimethyl-cyclopropylene group, 2,3-dimethyl-cyclopropylene group, 1-ethyl-cyclopropylene group , 2-Ethyl-cyclopropylene group, n-hexylene group, 1-methyl-n-pentylene group, 2-methyl-n-pentylene group, 3-methyl-n-pent
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
- the resist underlayer film forming composition of the present application has the following formula (1): at the end.
- X 1 represents —O—, —S—, an ester bond or an amide bond
- R 1 represents an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom. * Indicates the bond to the end of the polymer.
- One or more hydrogen atoms of the alkyl group having 1 to 20 carbon atoms may be substituted with the halogen atom.
- the number of carbon atoms is preferably 1 to 15, the number of carbon atoms is preferably 4 to 15, and the number of carbon atoms is preferably 4 to 12.
- a linear alkyl group without branching methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group
- N-decyl group n-undecyl group, n-dodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-hexadecyl group, n-heptadecyl group, n-octadecyl group, n-nonadecil group.
- N-Icosyl group N-Icosyl group.
- the polymer contained in the UV resist underlayer film forming composition of the present application for example, known polymers such as vinyl polymer polymer reacted with olefin, polyamide, polyester, polycarbonate, polyurethane and the like can be used, and vinyl reacted with olefin in particular.
- a polymerized polymer or a (meth) acrylic polymer obtained by polymerizing a (meth) acrylate compound is desirable.
- the (meth) acrylate compound means both an acrylate compound and a methacrylate compound.
- (meth) acrylic acid means acrylic acid and methacrylic acid.
- the polymer can be produced by a known method.
- the weight average molecular weight of the polymer is, for example, 2,000 to 50,000.
- the weight average molecular weight can be measured, for example, by the gel permeation chromatography described in Examples.
- Examples of the organic solvent contained in the EUV resist underlayer film forming composition of the present invention include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and propylene glycol.
- propylene glycol monomethyl ether propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, cyclohexanone and the like are preferable.
- propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are preferable.
- the polymer contains a reactive group in the side chain.
- Examples of the reactive group include a hydroxy group, an epoxy group, an acyl group, an acetyl group, a formyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azi group, a thiol group and a sulfo group. It is preferably selected from a group and an allyl group, and among these, a hydroxy group is preferable.
- the polymer is the formula (2):
- R 2 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
- Y 1 represents a single bond, —O—, —S—, an ester bond or an amide bond
- a 1 represents an amide bond. It is preferable to include a unit structure represented by (representing an alkylene group having 1 to 10 carbon atoms and Z 1 representing a reactive group).
- R 2 is preferably a hydrogen atom or a methyl group.
- Cross-linking catalyst (curing catalyst) contained in the resist underlayer film forming composition of the present invention as an optional component
- examples of the cross-linking catalyst (curing catalyst) contained in the resist underlayer film forming composition of the present invention as an optional component include p-toluenesulfonic acid, trifluoromethanesulfonic acid, and pyridinium-p-toluenesulfonate (pyridinium-p-toluenesulfonate).
- pyridinium-p-hydroxybenzene sulfonic acid p-phenol sulfonic acid pyridinium salt
- pyridinium-trifluoromethane sulfonic acid salicylic acid, camphor sulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzene sulfonic acid, 4-hydroxybenzene sulfonic acid
- sulfonic acid compounds such as acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, citric acid, benzoic acid and hydroxybenzoic acid, and carboxylic acid compounds.
- the content ratio of the cross-linking catalyst is, for example, 0.1% by mass to 50% by mass, preferably 1% by mass to 30% by mass, based on the above-mentioned cross-linking agent.
- cross-linking agent examples include hexamethoxymethylmelamine, tetramethoxymethylbenzoguanamine, and 1,3,4,6-tetrakis (methoxymethyl) glycoluryl (tetramethoxy).
- Methyl glycol uryl) (POWDERLINK® 1174), 1,3,4,6-tetrakis (butoxymethyl) glycol uryl, 1,3,4,6-tetrakis (hydroxymethyl) glycol uryl, 1,3-bis Examples thereof include (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea and 1,1,3,3-tetrakis (methoxymethyl) urea.
- the content ratio of the cross-linking agent is, for example, 1% by mass to 50% by mass, preferably 5% by mass to 30% by mass, based on the polymer.
- the resist underlayer film forming composition of the present invention does not generate pinholes or striations, and a surfactant can be further added in order to further improve the coatability against surface unevenness.
- a surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, and polyoxyethylene nonylphenol ether.
- Polyoxyethylene alkylallyl ethers Polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, etc.
- Polyoxyethylene sorbitan such as sorbitan fatty acid esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc.
- Nonionic surfactants such as fatty acid esters, Ftop EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd., trade name), Megafuck F171, F173, R-30 (manufactured by Dainippon Ink Co., Ltd., product) Name), Florard FC430, FC431 (manufactured by Sumitomo 3M Co., Ltd., trade name), Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd., trade name), etc.
- fatty acid esters Ftop EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd., trade name), Megafuck F171, F173, R-30 (manufactured by Dainippon Ink Co., Ltd., product) Name), Florard FC430, FC431 (manufact
- Fluorine-based surfactant organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Industry Co., Ltd.) and the like can be mentioned.
- the blending amount of these surfactants is usually 2.0% by mass or less, preferably 1.0% by mass or less, based on the total solid content of the resist underlayer film forming composition of the present invention.
- These surfactants may be added alone or in combination of two or more.
- the resist underlayer film according to the present invention can be produced by applying the above-mentioned resist underlayer film forming composition on a semiconductor substrate and firing it.
- Examples of the semiconductor substrate to which the resist underlayer film forming composition of the present invention is applied include silicon wafers, germanium wafers, and compound semiconductor wafers such as gallium arsenide, indium phosphide, gallium nitride, indium nitride, and aluminum nitride. Be done.
- the inorganic film can be, for example, ALD (atomic layer deposition) method, CVD (chemical vapor deposition) method, reactive sputtering method, ion plating method, vacuum deposition. It is formed by a method, a spin coating method (spin-on-glass: SOG).
- ALD atomic layer deposition
- CVD chemical vapor deposition
- reactive sputtering method reactive sputtering method
- ion plating method vacuum deposition. It is formed by a method, a spin coating method (spin-on-glass: SOG).
- spin-on-glass: SOG spin-on-glass
- the inorganic film include a polysilicon film, a silicon oxide film, a silicon nitride film, a BPSG (Boro-Phospho Silicone Glass) film, a titanium nitride film, a titanium nitride film, a tungsten film, a gallium nitride film, and a gallium ar
- the resist underlayer film forming composition of the present invention is applied onto such a semiconductor substrate by an appropriate coating method such as a spinner or a coater. Then, the resist underlayer film is formed by baking using a heating means such as a hot plate.
- the baking conditions are appropriately selected from a baking temperature of 100 ° C. to 400 ° C. and a baking time of 0.3 minutes to 60 minutes.
- the baking temperature is preferably 120 ° C. to 350 ° C. and the baking time is 0.5 minutes to 30 minutes, and more preferably the baking temperature is 150 ° C. to 300 ° C. and the baking time is 0.8 minutes to 10 minutes.
- the thickness of the EUV resist underlayer film formed is, for example, 0.001 ⁇ m (1 nm) to 10 ⁇ m, 0.002 ⁇ m (2 nm) to 1 ⁇ m, 0.005 ⁇ m (5 nm) to 0.5 ⁇ m (500 nm), 0.001 ⁇ m ( 1 nm) to 0.05 ⁇ m (50 nm), 0.002 ⁇ m (2 nm) to 0.05 ⁇ m (50 nm), 0.003 ⁇ m (1 nm) to 0.05 ⁇ m (50 nm), 0.004 ⁇ m (4 nm) to 0.05 ⁇ m (50 nm) ), 0.005 ⁇ m (5 nm) to 0.05 ⁇ m (50 nm), 0.003 ⁇ m (3 nm) to 0.03 ⁇ m (30 nm), 0.003 ⁇ m (3 nm) to 0.02 ⁇ m (20 nm), 0.005 ⁇ m (5 nm) It is ⁇ 0.02 ⁇
- the method for manufacturing the patterned substrate goes through the following steps. Usually, it is produced by forming a photoresist layer on an EUV resist underlayer film.
- the photoresist formed by applying and firing on the EUV resist underlayer film by a method known per se is not particularly limited as long as it is sensitive to the light used for exposure. Both negative photoresists and positive photoresists can be used.
- a positive photoresist composed of novolak resin and 1,2-naphthoquinonediazide sulfonic acid ester a chemically amplified photoresist composed of a binder having a group that decomposes with an acid to increase the alkali dissolution rate and a photoacid generator, and an acid.
- photoresists composed of low molecular weight compounds and photoacid generators that decompose with acid to increase the alkali dissolution rate of photoresists, and resists containing metal elements.
- JSR Corporation's product name V146G Shipley's product name APEX-E, Sumitomo Chemical's product name PAR710, and Shin-Etsu Chemical's product name AR2772, SEPR430 and the like can be mentioned.
- Proc. SPIE Vol. 3999, 330-334 (2000)
- Proc. SPIE Vol. 3999,357-364
- Proc. SPIE Vol. Fluorine-containing atomic polymer-based photoresists as described in 3999,365-374 (2000) can be mentioned.
- resist compositions such as the resist compositions, radiation-sensitive resin compositions, high-resolution patterning compositions based on organic metal solutions, and metal-containing resist compositions described in 2016-29498, JP-A-2011-253185, etc. can be used. However, it is not limited to these.
- Examples of the resist composition include the following. Sensitive photosensitivity or sensation, which comprises a resin A having a repeating unit having an acid-degradable group in which a polar group is protected by a protecting group desorbed by the action of an acid, and a compound represented by the general formula (1). Radial resin composition.
- m represents an integer of 1 to 6.
- R 1 and R 2 independently represent a fluorine atom or a perfluoroalkyl group.
- L 1 represents -O-, -S-, -COO-, -SO 2- , or -SO 3- .
- L 2 represents an alkylene group or a single bond which may have a substituent.
- W 1 represents a cyclic organic group which may have a substituent.
- M + represents a cation.
- Extreme ultraviolet rays or electron beams containing a compound having a metal-oxygen covalent bond and a solvent, and the metal elements constituting the compound belong to the 3rd to 7th periods of the 3rd to 15th groups of the periodic table.
- Metal-containing film-forming composition for lithography Metal-containing film-forming composition for lithography.
- Ar is a group obtained by removing (n + 1) hydrogen atoms from an arene having 6 to 20 carbon atoms.
- R 1 is a hydroxy group, a sulfanyl group or a monovalent group having 1 to 20 carbon atoms.
- an organic group .n is 0 when the ⁇ 11 .n is 2 or more integer, a plurality of R 1 may be the same or different .
- R 2 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group Is.
- R 3 is a monovalent group having 1 to 20 carbon atoms including the acid dissociative group.
- Z is a single bond, an oxygen atom or a sulfur atom.
- R 4 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 2 is an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, a hydrogen atom or a halogen atom
- X 1 is a single bond, -CO-O-* or -CO-NR 4 - * , * Represents a bond with -Ar
- R 4 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
- Ar represents one or more groups selected from the group consisting of a hydroxy group and a carboxyl group. Represents an aromatic hydrocarbon group having 6 to 20 carbon atoms which may have.
- a resist composition that generates an acid upon exposure and changes its solubility in a developing solution by the action of the acid. It contains a base material component (A) whose solubility in a developing solution changes due to the action of an acid and a fluorine additive component (F) which exhibits degradability in an alkaline developing solution.
- the fluorine additive component (F) is a fluorine having a structural unit (f1) containing a base dissociative group and a structural unit (f2) containing a group represented by the following general formula (f2-r-1).
- a resist composition comprising a resin component (F1).
- Rf 21 is independently a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, a hydroxyalkyl group or a cyano group.
- n is an integer from 0 to 2. * Is a bond.
- the resist composition includes the structural unit represented by the following general formula (f1-1) or the structural unit represented by the following general formula (f1-2).
- R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl halide group having 1 to 5 carbon atoms, respectively.
- X is a divalent linking group having no acid dissociation site.
- Aryl is a divalent aromatic cyclic group that may have a substituent.
- X 01 is a single bond or divalent linking group.
- R 2 is an organic group each independently having a fluorine atom.
- Examples of the resist film include the following.
- R A is independently, .R 1 and R 2 is a hydrogen atom or a methyl group are each independently a tertiary alkyl group having 4 to 6 carbon atoms
- R 3 is an independently fluorine atom or methyl group.
- M is an integer from 0 to 4.
- X 1 is a single bond, a phenylene group or a naphthylene group, or an ester bond, a lactone ring, a phenylene group.
- X 2 is a single bond, an ester bond or an amide bond.
- resist material examples include the following.
- RA is a hydrogen atom or a methyl group.
- X 1 is a single bond or an ester group.
- X 2 is a linear, branched or cyclic carbon number. It is an alkylene group of 1 to 12 or an arylene group having 6 to 10 carbon atoms, and a part of the methylene group constituting the alkylene group may be substituted with an ether group, an ester group or a lactone ring-containing group.
- X 2 contains at least one hydrogen atom substituted with a bromine atom.
- X 3 is a single bond, ether group, ester group, or linear, branched or cyclic alkylene having 1 to 12 carbon atoms.
- Rf 1 to Rf 4 are independently hydrogen atom, fluorine atom or trifluoromethyl group. Although it is a group, at least one is a fluorine atom or a trifluoromethyl group. Further, Rf 1 and Rf 2 may be combined to form a carbonyl group. R 1 to R 5 are independently and directly arranged.
- Cyano group, amide group, nitro group, sulton group, sulfone group or sulfonium salt containing group, and some of the methylene groups constituting these groups are ether group, ester group, carbonyl group, It may be substituted with a carbonate group or a sulfonic acid ester group. Further, R 1 and R 2 may be bonded to form a ring together with the sulfur atom to which they are bonded.
- RA is a hydrogen atom or a methyl group.
- R 1 is a hydrogen atom or an acid unstable group.
- R 2 is a linear, branched or cyclic carbon number 1 to 1.
- X 1 may contain a single bond or a phenylene group, or an ester group or a lactone ring, and has 1 to 12 linear, branched or cyclic carbon atoms.
- X 2 is -O-, -O-CH 2- or -NH-.
- M is an integer of 1 to 4.
- n is an integer of 0 to 3.
- Examples of the metal-containing resist composition include the following.
- a coating comprising a metal oxo-hydroxo network having an organic ligand by a metal carbon bond and / or a metal carboxylate bond.
- a coating solution comprising a hydrolyzable metal compound, represented by (X'is a ligand having a hydrolyzable MX bond or a combination
- RSnO 3 / 2-x / 2) (OH) x
- the exposure is carried out through a mask (reticle) for forming a predetermined pattern, and for example, i-ray, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) or EB (electron beam) are used.
- the resist underlayer film forming composition of the above is preferably applied for EUV (extreme ultraviolet) exposure.
- An alkaline developer is used for development, and the development temperature is appropriately selected from 5 ° C. to 50 ° C. and the development time is 10 seconds to 300 seconds.
- alkaline developing solution examples include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and the like. Secondary amines such as di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and the like.
- inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia
- primary amines such as ethylamine and n-propylamine, diethylamine, and the like.
- Secondary amines such as di-n-but
- an aqueous solution of an alkali such as a quaternary ammonium salt, cyclic amines such as pyrrole and piperidine can be used.
- an appropriate amount of an alcohol such as isopropyl alcohol or a nonionic surfactant may be added to the aqueous solution of the alkalis for use.
- the preferred developer is a quaternary ammonium salt, more preferably tetramethylammonium hydroxide and choline.
- a surfactant or the like can be added to these developers.
- a method of developing with an organic solvent such as butyl acetate to develop a portion of the photoresist in which the alkali dissolution rate has not been improved can also be used. Through the above steps, a substrate on which the above resist is patterned can be manufactured.
- the resist underlayer film is dry-etched using the formed resist pattern as a mask.
- the inorganic film is formed on the surface of the used semiconductor substrate, the surface of the inorganic film is exposed, and when the inorganic film is not formed on the surface of the used semiconductor substrate, the semiconductor substrate is exposed. Expose the surface.
- the semiconductor device can be manufactured through a step of processing the substrate by a method known per se (dry etching method or the like).
- the weight average molecular weights of the polymers shown in the following Synthesis Example 1 and Comparative Synthesis Example 1 of the present specification are measurement results by gel permeation chromatography (hereinafter, abbreviated as GPC).
- GPC gel permeation chromatography
- a GPC device manufactured by Tosoh Corporation is used for the measurement, and the measurement conditions and the like are as follows.
- GPC column Shodex KF803L, Shodex KF802, Shodex KF801 [registered trademark] (Showa Denko KK) Column temperature: 40 ° C Solvent: tetrahydrofuran (THF) Flow rate: 1.0 ml / min Standard sample: Polystyrene (manufactured by Tosoh Corporation)
- the polymer solution does not cause cloudiness even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- the polymer in the obtained solution had a weight average molecular weight of 5000 and a dispersity of 1.62 in terms of standard polystyrene.
- the polymer obtained in this synthetic example has a structural unit represented by the following formula (1a).
- the polymer in the obtained solution had a weight average molecular weight of 3690 and a dispersity of 2.25 in terms of standard polystyrene.
- the polymer obtained in this synthetic example has structural units represented by the following formulas (1b) and (2b).
- Example 1 To 3.12 g of the polymer solution containing 0.047 g of the polymer obtained in Synthesis Example 1, 0.11 g of tetramethoxymethylglycoluryl (manufactured by Nippon Cytec Industries Co., Ltd.) and pyridinium p-phenolsulfonate (Tokyo Chemical Industry Co., Ltd.) 0.012 g of (manufactured by Kogyo Co., Ltd.) was mixed, and 263.41 g of propylene glycol monomethyl ether and 29.89 g of propylene glycol monomethyl ether acetate were added and dissolved. Then, it was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to obtain an EUV resist underlayer film forming composition.
- Example 1 [Elution test into photoresist solvent]
- the resist underlayer film forming compositions of Example 1 and Comparative Example 1 were each applied on a silicon wafer, which is a semiconductor substrate, by a spinner.
- the silicon wafer was placed on a hot plate and baked at 215 ° C. for 1 minute to form a resist underlayer film (film thickness 5 nm).
- These resist underlayer films were immersed in ethyl lactate and propylene glycol monomethyl ether, which are solvents used for photoresists, and it was confirmed that they were insoluble in those solvents.
- Example 1 [Formation of positive resist pattern by electron beam lithography system]
- the resist underlayer film forming compositions of Example 1 and Comparative Example 1 were applied onto the film on a silicon wafer using a spinner, respectively.
- the silicon wafer was baked on a hot plate at 215 ° C. for 60 seconds to obtain a resist underlayer film having a film thickness of 5 nm.
- a positive resist solution for EUV was spin-coated on the resist underlayer film and heated at 100 ° C. for 60 seconds to form an EUV resist film.
- the resist film was exposed to a predetermined condition using an electron beam drawing apparatus (ELS-G130). After exposure, baking (PEB) was performed at 110 ° C.
- ELS-G130 electron beam drawing apparatus
- a resist pattern of 25 nm line / 50 nm pitch was formed.
- the photoresist pattern thus obtained was evaluated by observing from the upper part of the pattern.
- a well-formed resist pattern was defined as "good”, and an unfavorable state in which the resist pattern was peeled off and collapsed was defined as "collapse”.
- Example 1 [Formation of negative resist pattern by electron beam lithography system]
- the resist underlayer film forming compositions of Example 1 and Comparative Example 1 were applied onto the film on a silicon wafer using a spinner, respectively.
- the silicon wafer was baked on a hot plate at 215 ° C. for 60 seconds to obtain a resist underlayer film having a film thickness of 5 nm.
- a negative resist solution for EUV was spin-coated on the resist underlayer film and heated at 100 ° C. for 60 seconds to form an EUV resist film.
- the resist film was exposed to a predetermined condition using an electron beam drawing apparatus (ELS-G130). After exposure, baking (PEB) was performed at 110 ° C.
- ELS-G130 electron beam drawing apparatus
- the mixture was cooled to room temperature on a cooling plate, developed with butyl acetate, and then a resist pattern having a 25 nm line / 50 nm pitch was formed.
- a scanning electron microscope (CG4100, manufactured by Hitachi High-Technologies Corporation) was used to measure the length of the resist pattern.
- the photoresist pattern thus obtained was evaluated by observing from the upper part of the pattern. Those in which the resist pattern was well formed with the same exposure amount were regarded as "good”, and those in which the residuals were present between the resist pattern patterns were regarded as "defects".
- the resist underlayer film forming composition according to the present invention is a composition for forming a resist underlayer film capable of forming a desired resist pattern, a method for producing a substrate with a resist pattern using the resist underlayer film forming composition, and a semiconductor. A method of manufacturing the device can be provided.
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Abstract
Description
[1]
末端に、下記式(1):
(式(1)中、X1は-O-、-S-、エステル結合又はアミド結合を表し、R1はハロゲン原子で置換されていてもよい炭素原子数1~20のアルキル基を表す。*は、ポリマー末端への結合部分を示す。)
で表される構造を含むポリマー、及び有機溶剤を含む、EUVレジスト下層膜形成組成物。
[2]
上記ポリマーが、側鎖に反応性基を含む、[1]に記載のEUVレジスト下層膜形成組成物。
[3]
上記ポリマーが、式(2):
(式(2)中、R2は水素原子又は炭素原子数1~5のアルキル基を表し、Y1は単結合、-O-、-S-、エステル結合又はアミド結合を表し、A1は炭素原子数1~10のアルキレン基を表し、Z1は反応性基を表す)で表される単位構造を含む、[1]又は[2]に記載のEUVレジスト下層膜形成組成物。
[4]
上記反応性基が、ヒドロキシ基、エポキシ基、アシル基、アセチル基、ホルミル基、ベンゾイル基、カルボキシ基、カルボニル基、アミノ基、イミノ基、シアノ基、アゾ基、アジ基、チオール基、スルホ基及びアリル基からなる群より選ばれる、[2]又は[3]に記載のEUVレジスト下層膜形成組成物。
[5]
架橋触媒をさらに含む、[1]~[4]の何れか1項に記載のEUVレジスト下層膜形成組成物。
[6]
架橋剤をさらに含む、[1]~[5]の何れか1項に記載のEUVレジスト下層膜形成組成物。
[7]
[1]~[6]の何れか1項に記載のEUVレジスト下層膜形成組成物からなる塗布膜の焼成物であることを特徴とするEUVレジスト下層膜。
[8]
半導体基板上に[1]~[6]の何れか1項に記載のEUVレジスト下層膜形成組成物を塗布しベークしてEUVレジスト下層膜を形成する工程、前記EUVレジスト下層膜上にEUVレジストを塗布しベークしてEUVレジスト膜を形成する工程、前記EUVレジスト下層膜と前記EUVレジストで被覆された半導体基板を露光する工程、露光後の前記EUVレジスト膜を現像し、パターニングする工程を含む、パターニングされた基板の製造方法。
[9]
半導体基板上に、[1]~[6]の何れか1項に記載のEUVレジスト下層膜形成組成物からなるEUVレジスト下層膜を形成する工程と、
前記EUVレジスト下層膜の上にEUVレジスト膜を形成する工程と、
EUVレジスト膜に対する光又は電子線の照射とその後の現像によりEUVレジストパターンを形成する工程と、
形成された前記EUVレジストパターンを介して前記EUVレジスト下層膜をエッチングすることによりパターン化されたEUVレジスト下層膜を形成する工程と、
パターン化された前記EUVレジスト下層膜により半導体基板を加工する工程と、
を含むことを特徴とする、半導体装置の製造方法。
の構造を含むポリマー及び有機溶剤を含む、EUVレジスト下層膜形成組成物、である。
本願のEUVレジスト下層膜形成組成物は、このような構成とすることにより、レジストパターン形成時のLWR悪化の抑制及び感度の向上を達成することができる。
本発明において用いられる用語は、他に特に断りのない限り、以下の定義を有する。
「炭素原子数1~20のアルキル基」としては、メチル基、エチル基、n-プロピル基、i-プロピル基、シクロプロピル基、n-ブチル基、i-ブチル基、s-ブチル基、t-ブチル基、シクロブチル基、1-メチル-シクロプロピル基、2-メチル-シクロプロピル基、n-ペンチル基、1-メチル-n-ブチル基、2-メチル-n-ブチル基、3-メチル-n-ブチル基、1,1-ジメチル-n-プロピル基、1,2-ジメチル-n-プロピル基、2,2-ジメチル-n-プロピル基、1-エチル-n-プロピル基、シクロペンチル基、1-メチル-シクロブチル基、2-メチル-シクロブチル基、3-メチル-シクロブチル基、1,2-ジメチル-シクロプロピル基、2,3-ジメチル-シクロプロピル基、1-エチル-シクロプロピル基、2-エチル-シクロプロピル基、n-ヘキシル基、1-メチル-n-ペンチル基、2-メチル-n-ペンチル基、3-メチル-n-ペンチル基、4-メチル-n-ペンチル基、1,1-ジメチル-n-ブチル基、1,2-ジメチル-n-ブチル基、1,3-ジメチル-n-ブチル基、2,2-ジメチル-n-ブチル基、2,3-ジメチル-n-ブチル基、3,3-ジメチル-n-ブチル基、1-エチル-n-ブチル基、2-エチル-n-ブチル基、1,1,2-トリメチル-n-プロピル基、1,2,2-トリメチル-n-プロピル基、1-エチル-1-メチル-n-プロピル基、1-エチル-2-メチル-n-プロピル基、シクロヘキシル基、1-メチル-シクロペンチル基、2-メチル-シクロペンチル基、3-メチル-シクロペンチル基、1-エチル-シクロブチル基、2-エチル-シクロブチル基、3-エチル-シクロブチル基、1,2-ジメチル-シクロブチル基、1,3-ジメチル-シクロブチル基、2,2-ジメチル-シクロブチル基、2,3-ジメチル-シクロブチル基、2,4-ジメチル-シクロブチル基、3,3-ジメチル-シクロブチル基、1-n-プロピル-シクロプロピル基、2-n-プロピル-シクロプロピル基、1-i-プロピル-シクロプロピル基、2-i-プロピル-シクロプロピル基、1,2,2-トリメチル-シクロプロピル基、1,2,3-トリメチル-シクロプロピル基、2,2,3-トリメチル-シクロプロピル基、1-エチル-2-メチル-シクロプロピル基、2-エチル-1-メチル-シクロプロピル基、2-エチル-2-メチル-シクロプロピル基、2-エチル-3-メチル-シクロプロピル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、イコシル基、ノルボルニ基、アダマンチル基、アダマンタンメチル基、アダマンタンエチル基、シクロデカニル基、シクロウンデカニル基、シクロドデカンニル基、シクロトリデカニル基、 シクロテトラデカンニル基、シクロペンタデカンニル基、 シクロヘキサデカンニル基、 シクロヘプタデカニル基、シクロオクタデカンニル基、シクロノナデカニル基、 シクロイコサニル基等が挙げられる。
本願のレジスト下層膜形成組成物は、末端に、下記式(1):
の構造を含むポリマー、及び有機溶媒を含む、EUVレジスト下層膜形成組成物、である。
上記ポリマーが、式(2):
本発明のレジスト下層膜形成組成物に任意成分として含まれる架橋触媒(硬化触媒)としては、例えば、p-トルエンスルホン酸、トリフルオロメタンスルホン酸、ピリジニウム-p-トルエンスルホネート(ピリジニウム-p-トルエンスルホン酸)、ピリジニウム-p-ヒドロキシベンゼンスルホン酸(p-フェノールスルホン酸ピリジニウム塩)、ピリジニウム-トリフルオロメタンスルホン酸、サリチル酸、カンファースルホン酸、5-スルホサリチル酸、4-クロロベンゼンスルホン酸、4-ヒドロキシベンゼンスルホン酸、ベンゼンジスルホン酸、1-ナフタレンスルホン酸、クエン酸、安息香酸、ヒドロキシ安息香酸等のスルホン酸化合物及びカルボン酸化合物が挙げられる。上記架橋触媒が使用される場合、当該架橋触媒の含有割合は、前記架橋剤に対し、例えば0.1質量%~50質量%であり、好ましくは、1質量%~30質量%である。
本発明のレジスト下層膜形成組成物に任意成分として含まれる架橋剤としては、例えば、ヘキサメトキシメチルメラミン、テトラメトキシメチルベンゾグアナミン、1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(テトラメトキシメチルグリコールウリル)(POWDERLINK〔登録商標〕1174)、1,3,4,6-テトラキス(ブトキシメチル)グリコールウリル、1,3,4,6-テトラキス(ヒドロキシメチル)グリコールウリル、1,3-ビス(ヒドロキシメチル)尿素、1,1,3,3-テトラキス(ブトキシメチル)尿素及び1,1,3,3-テトラキス(メトキシメチル)尿素が挙げられる。上記架橋剤が使用される場合、当該架橋剤の含有割合は、前記ポリマーに対し、例えば1質量%~50質量%であり、好ましくは、5質量%~30質量%である。
本発明のレジスト下層膜形成組成物には、ピンホールやストリエーション等の発生がなく、表面むらに対する塗布性をさらに向上させるために、さらに界面活性剤を添加することができる。界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類、ポリオキシエチレンオクチルフェノールエーテル、ポリオキシエチレンノニルフェノールエーテル等のポリオキシエチレンアルキルアリルエーテル類、ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー類、ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリオレエート、ソルビタントリステアレート等のソルビタン脂肪酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリオキシエチレンソルビタン脂肪酸エステル類等のノニオン系界面活性剤、エフトップEF301、EF303、EF352((株)トーケムプロダクツ製、商品名)、メガファックF171、F173、R-30(大日本インキ(株)製、商品名)、フロラードFC430、FC431(住友スリーエム(株)製、商品名)、アサヒガードAG710、サーフロンS-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(株)製、商品名)等のフッ素系界面活性剤、オルガノシロキサンポリマーKP341(信越化学工業(株)製)等を挙げることができる。これらの界面活性剤の配合量は、本発明のレジスト下層膜形成組成物の全固形分に対して通常2.0質量%以下、好ましくは1.0質量%以下である。これらの界面活性剤は単独で添加してもよいし、また2種以上の組合せで添加することもできる。
本発明に係るレジスト下層膜は、上述したレジスト下層膜形成組成物を半導体基板上に塗布し、焼成することにより製造することができる。
パターニングされた基板の製造方法は以下の工程を経る。通常、EUVレジスト下層膜の上にフォトレジスト層を形成して製造される。EUVレジスト下層膜の上に自体公知の方法で塗布、焼成して形成されるフォトレジストとしては露光に使用される光に感光するものであれば特に限定はない。ネガ型フォトレジスト及びポジ型フォトレジストのいずれも使用できる。ノボラック樹脂と1,2-ナフトキノンジアジドスルホン酸エステルとからなるポジ型フォトレジスト、酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと光酸発生剤からなる化学増幅型フォトレジスト、酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物とアルカリ可溶性バインダーと光酸発生剤とからなる化学増幅型フォトレジスト、及び酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物と光酸発生剤からなる化学増幅型フォトレジスト、メタル元素を含有するレジストなどがある。例えば、JSR(株)製商品名V146G、シプレー社製商品名APEX-E、住友化学工業(株)製商品名PAR710、及び信越化学工業(株)製商品名AR2772、SEPR430等が挙げられる。また、例えば、Proc.SPIE,Vol.3999,330-334(2000)、Proc.SPIE,Vol.3999,357-364(2000)、やProc.SPIE,Vol.3999,365-374(2000)に記載されているような、含フッ素原子ポリマー系フォトレジストを挙げることができる。
酸の作用により脱離する保護基で極性基が保護された酸分解性基を有する繰り返し単位を有する樹脂A、及び、一般式(1)で表される化合物を含む、感活性光線性又は感放射線性樹脂組成物。
R1及びR2は、それぞれ独立に、フッ素原子又はパーフルオロアルキル基を表す。
L1は、-O-、-S-、-COO-、-SO2-、又は、-SO3-を表す。
L2は、置換基を有していてもよいアルキレン基又は単結合を表す。
W1は、置換基を有していてもよい環状有機基を表す。
M+は、カチオンを表す。
R2は、ハロゲン原子を有してもよい炭素数1~6のアルキル基、水素原子又はハロゲン原子を表し、X1は、単結合、-CO-O-*又は-CO-NR4-*を表し、*は-Arとの結合手を表し、R4は、水素原子又は炭素数1~4のアルキル基を表し、Arは、ヒドロキシ基及びカルボキシル基からなる群から選ばれる1以上の基を有していてもよい炭素数6~20の芳香族炭化水素基を表す。]
酸の作用により現像液に対する溶解性が変化する基材成分(A)及びアルカリ現像液に対して分解性を示すフッ素添加剤成分(F)を含有し、
前記フッ素添加剤成分(F)は、塩基解離性基を含む構成単位(f1)と、下記一般式(f2-r-1)で表される基を含む構成単位(f2)と、を有するフッ素樹脂成分(F1)を含有することを特徴とする、レジスト組成物。
下記式(a1)で表される繰り返し単位及び/又は下記式(a2)で表される繰り返し単位と、露光によりポリマー主鎖に結合した酸を発生する繰り返し単位とを含むベース樹脂を含むレジスト膜。
下記式(a1)又は(a2)で表される繰り返し単位を有するポリマーを含むレジスト材料。
金属炭素結合および/または金属カルボキシラート結合により有機配位子を有する金属オキソ-ヒドロキソネットワークを含むコーティング。
コーティング溶液であって、有機溶媒; 第一の有機金属組成物であって、式RzSnO(2-(z/2)-(x/2))(OH)x(ここで、0<z≦2および0<(z+x)≦4である)、式R’nSnX4-n(ここで、n=1または2である)、またはそれらの混合物によって表され、ここで、RおよびR’が、独立して、1~31個の炭素原子を有するヒドロカルビル基であり、およびXが、Snに対する加水分解性結合を有する配位子またはそれらの組合せである、第一の有機金属組成物;および 加水分解性の金属化合物であって、式MX’v(ここで、Mが、元素周期表の第2~16族から選択される金属であり、v=2~6の数であり、およびX’が、加水分解性のM-X結合を有する配位子またはそれらの組合せである)によって表される、加水分解性の金属化合物 を含む、コーティング溶液。
GPCカラム:Shodex KF803L、Shodex KF802、Shodex KF801〔登録商標〕(昭和電工(株))
カラム温度:40℃
溶媒:テトラヒドロフラン(THF)
流量:1.0ml/分
標準試料:ポリスチレン(東ソー(株)製)
ヒドロキシエチルメタクリレート(東京化成工業(株)製)125.00g、アゾビスイソブチロニトリル(東京化成工業(株)製)22.78g、エチルトリフェニルホスホニウムブロミド(ACROSS社製)3.15g、ドデカンチオール(東京化成工業(株)製)9.72gを、プロピレングリコールモノメチルエーテル321.71gに加え溶解させた。反応容器を窒素置換後、80℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエ―テルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量5000、分散度は1.62であった。本合成例で得られたポリマーは、下記式(1a)で表される構造単位を有する。
t-ブトキシメタクリレート(東京化成工業(株)製)10.00g、2-ヒドロキシエチルメタクリレート(東京化成工業(株)製)6.10g、アゾビスイソブチロニトリル(東京化成工業(株)製)0.96gを、プロピレングリコールモノメチルエーテル73.00gに加え溶解させた。反応容器を窒素置換後、80℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量3690、分散度は2.25であった。本合成例で得られたポリマーは、下記式(1b)及び式(2b)で表される構造単位を有する。
上記合成例1で得られた、ポリマー0.047gを含むポリマー溶液3.12gに、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.11gとp-フェノールスルホン酸ピリジニウム塩(東京化成工業(株)製)0.012gを混合し、プロピレングリコールモノメチルエーテル263.41g及びプロピレングリコールモノメチルエーテルアセテート29.89gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、EUVレジスト下層膜形成組成物とした。
上記比較合成例1で得られた、ポリマー0.047gを含むポリマー溶液3.12gに、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.11gとp-フェノールスルホン酸ピリジニウム塩(東京化成工業(株)製)0.012gを混合し、プロピレングリコールモノメチルエーテル263.41g及びプロピレングリコールモノメチルエーテルアセテート29.89gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、EUVレジスト下層膜形成組成物とした。
実施例1及び比較例1のレジスト下層膜形成組成物を、それぞれ、スピナーにより、半導体基板であるシリコンウェハー上に塗布した。そのシリコンウェハーをホットプレート上に配置し、215℃で1分間ベークし、レジスト下層膜(膜厚5nm)を形成した。これらのレジスト下層膜をフォトレジストに使用する溶剤である乳酸エチル及びプロピレングリコールモノメチルエーテルに浸漬し、それらの溶剤に不溶であることを確認した。
膜上に実施例1及び比較例1のレジスト下層膜形成組成物を、スピナーを用いてシリコンウェハー上にそれぞれ塗布した。そのシリコンウェハーを、ホットプレート上で215℃で60秒間ベークし、膜厚5nmのレジスト下層膜を得た。そのレジスト下層膜上に、EUV用ポジ型レジスト溶液をスピンコートし、100℃で60秒間加熱し、EUVレジスト膜を形成した。そのレジスト膜に対し、電子線描画装置(ELS-G130)を用い、所定の条件で露光した。露光後、110℃で60秒間ベーク(PEB)を行い、クーリングプレート上で室温まで冷却し、アルカリ現像液(2.38%TMAH)で現像した後、25nmライン/50nmピッチのレジストパターンを形成した。レジストパターンの測長には走査型電子顕微鏡((株)日立ハイテクノロジーズ製、CG4100)を用いた。上記レジストパターンの形成において、25nmライン/50nmピッチ(ラインアンドスペース(L/S=1/1)を形成した露光量を最適露光量とした。
膜上に実施例1及び比較例1のレジスト下層膜形成組成物を、スピナーを用いてシリコンウェハー上にそれぞれ塗布した。そのシリコンウェハーを、ホットプレート上で215℃で60秒間ベークし、膜厚5nmのレジスト下層膜を得た。そのレジスト下層膜上に、EUV用ネガ型レジスト溶液をスピンコートし、100℃で60秒間加熱し、EUVレジスト膜を形成した。そのレジスト膜に対し、電子線描画装置(ELS-G130)を用い、所定の条件で露光した。露光後、110℃で60秒間ベーク(PEB)を行い、クーリングプレート上で室温まで冷却し、酢酸ブチルで現像した後、25nmライン/50nmピッチのレジストパターンを形成した。レジストパターンの測長には走査型電子顕微鏡((株)日立ハイテクノロジーズ製、CG4100)を用いた。上記レジストパターンの形成において、25nmライン/50nmピッチ(ラインアンドスペース(L/S=1/1)を形成した露光量を最適露光量とした。
Claims (9)
- 上記ポリマーが、側鎖に反応性基を含む、請求項1に記載のEUVレジスト下層膜形成組成物。
- 上記反応性基が、ヒドロキシ基、エポキシ基、アシル基、アセチル基、ホルミル基、ベンゾイル基、カルボキシ基、カルボニル基、アミノ基、イミノ基、シアノ基、アゾ基、アジ基、チオール基、スルホ基及びアリル基からなる群より選ばれる、請求項2又は3に記載のEUVレジスト下層膜形成組成物。
- 架橋触媒をさらに含む、請求項1~4の何れか1項に記載のEUVレジスト下層膜形成組成物。
- 架橋剤をさらに含む、請求項1~5の何れか1項に記載のEUVレジスト下層膜形成組成物。
- 請求項1~6の何れか1項に記載のEUVレジスト下層膜形成組成物からなる塗布膜の焼成物であることを特徴とするEUVレジスト下層膜。
- 半導体基板上に請求項1~6の何れか1項に記載のEUVレジスト下層膜形成組成物を塗布しベークしてEUVレジスト下層膜を形成する工程、前記EUVレジスト下層膜上にEUVレジストを塗布しベークしてEUVレジスト膜を形成する工程、前記EUVレジスト下層膜と前記EUVレジストで被覆された半導体基板を露光する工程、露光後の前記EUVレジスト膜を現像し、パターニングする工程を含む、パターニングされた基板の製造方法。
- 半導体基板上に、請求項1~6の何れか1項に記載のEUVレジスト下層膜形成組成物からなるEUVレジスト下層膜を形成する工程と、
前記EUVレジスト下層膜の上にEUVレジスト膜を形成する工程と、
EUVレジスト膜に対する光又は電子線の照射とその後の現像によりEUVレジストパターンを形成する工程と、
形成された前記EUVレジストパターンを介して前記EUVレジスト下層膜をエッチングすることによりパターン化されたEUVレジスト下層膜を形成する工程と、
パターン化された前記EUVレジスト下層膜により半導体基板を加工する工程と、
を含むことを特徴とする、半導体装置の製造方法。
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