WO2021107756A1 - Method for fabricating self-strain stress thin diaphragm to activate piezopotential energy effect to enhance the sensor sensitivity - Google Patents

Method for fabricating self-strain stress thin diaphragm to activate piezopotential energy effect to enhance the sensor sensitivity Download PDF

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Publication number
WO2021107756A1
WO2021107756A1 PCT/MY2020/050113 MY2020050113W WO2021107756A1 WO 2021107756 A1 WO2021107756 A1 WO 2021107756A1 MY 2020050113 W MY2020050113 W MY 2020050113W WO 2021107756 A1 WO2021107756 A1 WO 2021107756A1
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WO
WIPO (PCT)
Prior art keywords
fabricating
diaphragm
piezopotential
nanostructure
electrodes
Prior art date
Application number
PCT/MY2020/050113
Other languages
French (fr)
Inventor
Dr. Khairul Anuar Bin ABD WAHID
Dr. Hing Wah LEE
Dr. Wai Yee LEE
Suraya Binti SULAIMAN
Dr. Muhammad Aniq Shazni Bin MOHAMMAD HANIFF
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2021107756A1 publication Critical patent/WO2021107756A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0044—Constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0183—Selective deposition
    • B81C2201/0187—Controlled formation of micro- or nanostructures using a template positioned on a substrate

Definitions

  • the present invention generally relates to methods for providing sensing elements or devices with improved sensitivity of sensing elements, and devices comprising such sensing elements.
  • piezoelectric material is able to convert mechanical stress into electrical voltage and vice versa.
  • piezoelectric switches have been appreciated for their durability, hence researchers are continuously developing ways to incorporate piezoelectric benefits in industrial applications.
  • piezotronics properties has been proved will enhance the signal level when the strain-stress is applied to this crystal structure.
  • innovators and researches have been investigating the potential of piezotronic effect to enhance varied type of sensor sensitivity.
  • the current sensor relied on external strain/stress energy (push or bend from external source) in order to activate the piezotronic potential hence limit the practicality for real sensor applications.
  • unstable strain/stress energy from external source may introduce inconsistencies to sensor output which in turn results a drift on sensor accuracy.
  • US 9488622 issued to Wan et al is a prior art of the relevant field that discloses a method for enhancing the detection sensitivity of a piezoelectric microcantilever sensor.
  • the method however involves providing a piezoelectric microcantilever and inducing a change in the Young's modulus during detection of a species of interest.
  • This prior art does not disclose using a diaphragm or nanostructures.
  • the present invention relates to a method of fabricating self strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps: preparing a substrate; depositing an oxide layer on the front and back portion of the substrate; depositing at least one electrode on the oxide layer; growing or forming nanostructures as the sensing element on the substrate; coating the nanostructure with a protective layer; etching a back surface of oxide and forming a thin film diaphragm; and removing the protective layer that coated the nanostructure; wherein when pressure is applied on the diaphragm, the diaphragm deflects and activates the piezopotential energy which increases the sensing element sensitivity.
  • the deflected diaphragm generates compressive stress that is transferred to the nanostructures thereby generating tensile strain within the nanostructures hence resulting to the activation of piezopotential energy that increases sensing element sensitivity.
  • the activation of the piezopotential energy increases the height of the local Schottky barrier of the nanostructures.
  • the step of removing the protective layer includes using acetone and cleaning in an alcohol solution.
  • the substrate includes silicon or glass.
  • the oxide layer thickness is above 200nm.
  • the types of the electrodes fabricated is selected from fingers electrodes, two electrodes and one electrode.
  • the material of the electrodes fabricated is selected from tungsten, aluminium, gold, platinum, carbon or silver, or a combination thereof.
  • the thickness of the electrodes is 1 pm and below.
  • the electrodes is deposited on any thin diaphragm area.
  • growing the nanostructure includes wet, chemical vapour deposition (CVD) method or electroplating method.
  • CVD chemical vapour deposition
  • nanostructure comprise of any piezotronic material.
  • the present invention provides a sensing device comprising a diaphragm as fabricated using a method as disclosed herein.
  • FIG. 1A to FIG. IB provides an overall process of the method in accordance with an embodiment of the present invention.
  • FIG.2 illustrates layout of diaphragm and how the diaphragm increases sensor sensitivity in accordance with a preferred embodiment of the present invention.
  • the present invention provides a method of fabricating a sensor platform, wherein the sensor platform is adapted to generate the self-strain/stress energy which in return will introduce piezotronics potential effect to the sensor.
  • a film diaphragm form is used as a basis structure where the stress/strain is concentrated at diaphragm edges upon the diaphragm deflection or deformation. Detailed information on how the deflection of diaphragm can affect the sensitivity of a sensor will be provided herein.
  • the overall method contemplated in accordance with one embodiment of the present invention is as shown in FIG. 1A and FIG. IB.
  • the method of fabricating self strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps; preparing a substrate (S 101) as shown in FIG. IB (a); depositing an oxide layer on the front and back portion of the substrate (S102) as shown in FIG. IB (b); depositing at least one electrode on the top surface of the oxide (S 103) as shown in FIG. IB (c); growing or forming nanostructures on the substrate (S 104) as shown in FIG. IB (d); coating the nanostructure with a protective layer (S105) as shown in FIG.
  • the substrate includes, but not limiting to silicon or glass.
  • the oxide layer is accordingly deposited on both front and back portion of said substrate.
  • the oxide layer thickness is above 200 nm.
  • Types of the electrodes fabricated is selected from fingers electrodes, two electrodes and one electrode and may be of one of the following materials, tungsten, aluminium, gold, platinum, carbon or silver, or a combination thereof. In one preferred embodiment, the thickness of the electrode is about 1 pm and below.
  • the electrode is deposited on at least one surface of the oxide layer, prior to growing or forming nanoparticles or nanostructures on the electrodes which are on top of the substrate. Coating the nanostructure with the protective layer prevents etching of the oxide layer disposed on the back surface or portion of the substrate. The protective layer is then removed with the use of acetone and cleaning the same in an alcohol solution.
  • the growth of nanostructure can be initiated by means of wet, CVD or electroplating technique.
  • the nanostructure can be of any suitable piezotronics material or particles.
  • FIG. 2 An example of the layout of which the concept of the present invention is deployed is as shown in FIG. 2.
  • the deflection of diaphragm is typically occurred when a pressure is applied to the diaphragm. During deflection, the diaphragm experiences a surface stress difference which is proportional with magnitude of the pressure applied.
  • large deflection theory is applied. Using this theory, deflections up to three times the diaphragm thickness, is employed, resulting to the radius of diaphragm is greater than thickness of diaphragm ( r>>t ). Due to great radius of the diaphragm, the diaphragm is therefore deflected upon ambient atmospheric pressure.
  • the diaphragm experiences the compressive stress which then transfers to the sensing element layer, which is the nanostructures being the top layer as shown in FIG2.
  • the sensing element being the nanostructures generates the tensile strain at local contact of nanowires.
  • the piezopotential energy is activated hence increases height of the local Schottky barrier of the nanostructures - being the metal-semiconductor material in this arrangement, and thus significantly affect the behaviour of charge carriers of the Schottky barrier. Accordingly, it is found that increasing the height of local. Schottky barrier is desired to increase the sensor sensitivity.
  • “Local” in this context is defined as existing in a small area of the potential energy barrier for electrons formed at the metal -semiconductor junction.
  • sensing means or tools that includes the diaphragm fabricated in accordance with the method of the present invention.
  • the sensing tool or devices include, but not limiting to; enhance signal sensitivities for humidity, glucose and gas sensors.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The present invention provides a method of fabricating self-strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps: preparing a substrate; depositing an oxide layer on the front and back portion of the substrate; depositing at least one electrode on the top surface of the oxide; growing or forming nanostructures on the substrate; coating the nanostructure with a protective layer; etching the back surface of oxide and forming a thin film diaphragm and removing the protective layer that coated the nanostructure.

Description

METHOD FOR FABRICATING SELF-STRAIN STRESS THIN DIAPHRAGM TO ACTIVATE PIEZOPOTENTIAL ENERGY EFFECT TO ENHANCE THE
SENSOR SENSITIVITY
FIELD OF INVENTION
[0001] The present invention generally relates to methods for providing sensing elements or devices with improved sensitivity of sensing elements, and devices comprising such sensing elements.
BACKGROUND OF INVENTION
[0002] It is known that piezoelectric material is able to convert mechanical stress into electrical voltage and vice versa. Traditionally, piezoelectric switches have been appreciated for their durability, hence researchers are continuously developing ways to incorporate piezoelectric benefits in industrial applications.
For instance, piezotronics properties has been proved will enhance the signal level when the strain-stress is applied to this crystal structure. With such advantageous characteristic, innovators and researches have been investigating the potential of piezotronic effect to enhance varied type of sensor sensitivity. However, the current sensor relied on external strain/stress energy (push or bend from external source) in order to activate the piezotronic potential hence limit the practicality for real sensor applications. Moreover, unstable strain/stress energy from external source may introduce inconsistencies to sensor output which in turn results a drift on sensor accuracy.
US 9488622 issued to Wan et al, is a prior art of the relevant field that discloses a method for enhancing the detection sensitivity of a piezoelectric microcantilever sensor. The method however involves providing a piezoelectric microcantilever and inducing a change in the Young's modulus during detection of a species of interest. This prior art however does not disclose using a diaphragm or nanostructures.
[0003] Thus, there remains a considerable need for methods or approaches that can conveniently address the above-discussed drawbacks related to providing or improving sensor sensitivity.
SUMMARY
[0004] In one aspect, the present invention relates to a method of fabricating self strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps: preparing a substrate; depositing an oxide layer on the front and back portion of the substrate; depositing at least one electrode on the oxide layer; growing or forming nanostructures as the sensing element on the substrate; coating the nanostructure with a protective layer; etching a back surface of oxide and forming a thin film diaphragm; and removing the protective layer that coated the nanostructure; wherein when pressure is applied on the diaphragm, the diaphragm deflects and activates the piezopotential energy which increases the sensing element sensitivity.
[0005] Preferably, the deflected diaphragm generates compressive stress that is transferred to the nanostructures thereby generating tensile strain within the nanostructures hence resulting to the activation of piezopotential energy that increases sensing element sensitivity.
[0006] Preferably, the activation of the piezopotential energy increases the height of the local Schottky barrier of the nanostructures.
[0007] Preferably, the step of removing the protective layer includes using acetone and cleaning in an alcohol solution.
[0008] Preferably, the substrate includes silicon or glass.
[0009] Preferably, the oxide layer thickness is above 200nm. [0010] Preferably, the types of the electrodes fabricated is selected from fingers electrodes, two electrodes and one electrode.
[0011] Preferably, the material of the electrodes fabricated is selected from tungsten, aluminium, gold, platinum, carbon or silver, or a combination thereof.
[0012] Preferably, the thickness of the electrodes is 1 pm and below.
[0013] Preferably, the electrodes is deposited on any thin diaphragm area.
[0014] Preferably, growing the nanostructure includes wet, chemical vapour deposition (CVD) method or electroplating method.
[0015] Preferably, nanostructure comprise of any piezotronic material.
[0016] In a further aspect, the present invention provides a sensing device comprising a diaphragm as fabricated using a method as disclosed herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The invention will be more understood by reference to the description below taken in conjunction with the accompanying drawings herein:
[0018] FIG. 1A to FIG. IB provides an overall process of the method in accordance with an embodiment of the present invention; and
[0019] FIG.2 illustrates layout of diaphragm and how the diaphragm increases sensor sensitivity in accordance with a preferred embodiment of the present invention.
DETAILED DESCRIPTION
[0020] In line with the above summary, the following description of a number of specific and alternative embodiments is provided to understand the inventive features of the present invention. It shall be apparent to one skilled in the art, however that this invention may be practiced without such specific details. Some of the details may not be described at length so as not to obscure the invention. For ease of reference, common reference numerals will be used throughout the figures when referring to the same or similar features common to the figures.
[0021] In one aspect, the present invention provides a method of fabricating a sensor platform, wherein the sensor platform is adapted to generate the self-strain/stress energy which in return will introduce piezotronics potential effect to the sensor. In one embodiment, a film diaphragm form is used as a basis structure where the stress/strain is concentrated at diaphragm edges upon the diaphragm deflection or deformation. Detailed information on how the deflection of diaphragm can affect the sensitivity of a sensor will be provided herein.
[0022] The overall method contemplated in accordance with one embodiment of the present invention is as shown in FIG. 1A and FIG. IB. The method of fabricating self strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps; preparing a substrate (S 101) as shown in FIG. IB (a); depositing an oxide layer on the front and back portion of the substrate (S102) as shown in FIG. IB (b); depositing at least one electrode on the top surface of the oxide (S 103) as shown in FIG. IB (c); growing or forming nanostructures on the substrate (S 104) as shown in FIG. IB (d); coating the nanostructure with a protective layer (S105) as shown in FIG. IB (e); etching the back surface of oxide and forming a thin film diaphragm (S 106) as shown in FIG. IB (f) and removing the protective layer that coated the nanostructure (S107) as shown in FIG. IB (g).
[0023] In a preferred embodiment, the substrate includes, but not limiting to silicon or glass. The oxide layer is accordingly deposited on both front and back portion of said substrate. Although it is not a limitation, the oxide layer thickness is above 200 nm. Types of the electrodes fabricated is selected from fingers electrodes, two electrodes and one electrode and may be of one of the following materials, tungsten, aluminium, gold, platinum, carbon or silver, or a combination thereof. In one preferred embodiment, the thickness of the electrode is about 1 pm and below.
[0024] Subsequently, the electrode is deposited on at least one surface of the oxide layer, prior to growing or forming nanoparticles or nanostructures on the electrodes which are on top of the substrate. Coating the nanostructure with the protective layer prevents etching of the oxide layer disposed on the back surface or portion of the substrate. The protective layer is then removed with the use of acetone and cleaning the same in an alcohol solution. The growth of nanostructure can be initiated by means of wet, CVD or electroplating technique. The nanostructure can be of any suitable piezotronics material or particles.
[0025] An example of the layout of which the concept of the present invention is deployed is as shown in FIG. 2. The deflection of diaphragm is typically occurred when a pressure is applied to the diaphragm. During deflection, the diaphragm experiences a surface stress difference which is proportional with magnitude of the pressure applied. In order to generate self-stress-strain energy on diaphragm, large deflection theory is applied. Using this theory, deflections up to three times the diaphragm thickness, is employed, resulting to the radius of diaphragm is greater than thickness of diaphragm ( r>>t ). Due to great radius of the diaphragm, the diaphragm is therefore deflected upon ambient atmospheric pressure.
[0026] As the diaphragm is deflected, the diaphragm experiences the compressive stress which then transfers to the sensing element layer, which is the nanostructures being the top layer as shown in FIG2. The sensing element, being the nanostructures generates the tensile strain at local contact of nanowires. As a result to the tensile strain, the piezopotential energy is activated hence increases height of the local Schottky barrier of the nanostructures - being the metal-semiconductor material in this arrangement, and thus significantly affect the behaviour of charge carriers of the Schottky barrier. Accordingly, it is found that increasing the height of local. Schottky barrier is desired to increase the sensor sensitivity. It should be noted that “Local” in this context is defined as existing in a small area of the potential energy barrier for electrons formed at the metal -semiconductor junction.
[0027] Accordingly, it is another aspect of the present invention to provide sensing means or tools that includes the diaphragm fabricated in accordance with the method of the present invention. The sensing tool or devices include, but not limiting to; enhance signal sensitivities for humidity, glucose and gas sensors.
[0028] As would be apparent to a person having ordinary skilled in the art, the afore- described methods and components may be provided in many variations, modifications or alternatives to existing camera systems. The principles and concepts disclosed herein may also be implemented in various manner or form in conjunction with the hardware or firmware of the systems which may not have been specifically described herein but which are to be understood as encompassed within the scope and letter of the following claims.

Claims

1. A method of fabricating self-strain stress thin diaphragm to activate piezopotential energy effect to enhance a sensor sensitivity comprising the following steps: preparing a substrate; depositing an oxide layer on the front and back portion of the substrate; depositing at least one electrode on a top surface of the oxide layer; providing a nanostructure as a sensing element on the substrate; coating the nanostructure with a protective layer; etching a back surface of oxide and forming a thin film diaphragm; and removing the protective layer that coated the nanostructure; wherein when pressure is applied on the diaphragm, the diaphragm deflects and activates the piezopotential energy that increases the sensing element sensitivity.
2. The method as claimed in Claim 1, wherein the deflected diaphragm generates compressive stress that is transferred to the nanostructures thereby generating tensile strain within the nanostructures hence resulting to an activation of piezopotential energy that increases sensing element sensitivity.
3. The method as claimed in Claim 2, wherein the activation of the piezopotential energy increases height of the local Schottky barrier of the nanostructures.
4. The method of fabricating as claimed in Claim 1 , wherein removing the protective layer includes using acetone and cleaning in an alcohol solution.
5. The method of fabricating as claimed in Claim 1, wherein the substrate includes silicon or glass.
6. The method of fabricating as claimed in Claim 1 , wherein the oxide layer thickness is above 200nm.
7. The method of fabricating as claimed in Claim 1, whereby types of the electrodes fabricated is selected from fingers electrodes, two electrodes and one electrode.
8. The method of fabricating as claimed in Claim 1 , wherein material of the electrodes fabricated is selected from tungsten, aluminium, gold, platinum, carbon or silver, or a combination thereof.
9. The method of fabricating as claimed in Claim 1, wherein thickness of the electrodes is 1 pm and below.
10. The method of fabricating as claimed in Claim 1, wherein the electrodes is deposited on any thin diaphragm area.
11. The method of fabricating as claimed in Claim 1, wherein growing the nanostructure includes wet, chemical vapour deposition method or electroplating method.
12. The method of fabricating as claimed in Claim 1, wherein the nanostructure comprise of any piezotronic material.
13. The method as claimed in Claim 1, wherein providing the nanostructures include growing the nanostructures on the surface.
14. A sensing device comprising a diaphragm as fabricated using a method as claimed in Claim 1.
PCT/MY2020/050113 2019-11-29 2020-10-21 Method for fabricating self-strain stress thin diaphragm to activate piezopotential energy effect to enhance the sensor sensitivity WO2021107756A1 (en)

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MYPI2019007067 2019-11-29

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120322164A1 (en) * 2009-10-16 2012-12-20 Cornell University Nanowire array structures for sensing, solar cell and other applications
US8558329B2 (en) * 2009-11-13 2013-10-15 Georgia Tech Research Corporation Piezo-phototronic sensor
US9093355B2 (en) * 2011-04-08 2015-07-28 Georgia Tech Research Corporation High-resolution parallel-detection sensor array using piezo-phototronics effect
CN106841314B (en) * 2017-03-29 2019-10-11 西安交通大学 One kind being based on nano-TiO2Low-power consumption micro-nano gas sensor and preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120322164A1 (en) * 2009-10-16 2012-12-20 Cornell University Nanowire array structures for sensing, solar cell and other applications
US8558329B2 (en) * 2009-11-13 2013-10-15 Georgia Tech Research Corporation Piezo-phototronic sensor
US9093355B2 (en) * 2011-04-08 2015-07-28 Georgia Tech Research Corporation High-resolution parallel-detection sensor array using piezo-phototronics effect
CN106841314B (en) * 2017-03-29 2019-10-11 西安交通大学 One kind being based on nano-TiO2Low-power consumption micro-nano gas sensor and preparation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HU GUOFENG, ZHOU RANRAN, YU RUOMENG, DONG LIN, PAN CAOFENG, WANG ZHONG LIN: "Piezotronic effect enhanced Schottky-contact ZnO micro/nanowire humidity sensors", NANO RESEARCH, vol. 7, no. 7, 27 July 2014 (2014-07-27), CN, pages 1083 - 1091, XP055815708, ISSN: 1998-0124, DOI: 10.1007/s12274-014-0471-6 *

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