WO2021013571A1 - Saw/baw hybrid rf receiving filter, rf duplexer and rf multiplexer - Google Patents

Saw/baw hybrid rf receiving filter, rf duplexer and rf multiplexer Download PDF

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Publication number
WO2021013571A1
WO2021013571A1 PCT/EP2020/069420 EP2020069420W WO2021013571A1 WO 2021013571 A1 WO2021013571 A1 WO 2021013571A1 EP 2020069420 W EP2020069420 W EP 2020069420W WO 2021013571 A1 WO2021013571 A1 WO 2021013571A1
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WO
WIPO (PCT)
Prior art keywords
filter
baw
saw
die
dms
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PCT/EP2020/069420
Other languages
French (fr)
Inventor
Philipp Schwegler
Robert Koch
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RF360 Europe GmbH
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Publication of WO2021013571A1 publication Critical patent/WO2021013571A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H03H9/605—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6436—Coupled resonator filters having one acoustic track only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process

Definitions

  • the present disclosure relates to an RF receiving filter.
  • the present disclosure also relates to an RF duplexer, an RF multiplexer and an RF filter device comprising the RF receiving filter.
  • Carrier aggregation is a technique used in wireless communication to increase the data rate per user.
  • multiple frequency blocks also called component carriers, are assigned to the same user.
  • the total data rate of a cell is increased as well because of a better resource utilization.
  • load balancing is possible with carrier aggregation.
  • RF filters radio-frequency filters
  • RF filters typically require many design trade-offs to achieve, for each specific application, the best compromise between performance parameters such as insertion loss, rejection, isolation, power handling, linearity , size and cost.
  • Electro-acoustic resonators are widely used in electronic devices to realize RF filters including band- reject filters, band-pass filters, duplexers, and multiplexers, oscillators or other frequency-selective electronic components.
  • the resonators comprise a pair of electrodes and a piezoelectric layer. By application of an electrical RF signal to the electrodes, a resonating acoustic wave is generated within the piezoelectric layer, which is frequency-selective with regard to the electrical RF signal.
  • An electronic RF filter may be formed by interconnection of several electro-acoustic resonators that may select a desired frequency band from the received frequency spectrum or shape an electrical signal for transmission.
  • electro-acoustic resonators such as bulk acoustic wave (BAW) resonators, which sandwich the piezoelectric layer between a pair of bottom and top electrodes, and surface acoustic wave (SAW) resonators, which comprise a pair of interdigital transducer electrodes on the top surface of the piezoelectric layer.
  • BAW bulk acoustic wave
  • SAW surface acoustic wave
  • an RF filter according to the features of present claim 1.
  • One or more of the above-mentioned objects are also achieved by an RF multiplexer according to the features of present claim 12.
  • One or more of the above-mentioned objects are also achieved by an RF multiplexer according to the features of present claim 14.
  • an RF receiving filter for receiving an RF signal from an antenna.
  • the RX filter comprises an input port for receiving a radio frequency signal from an antenna and an output port on which the filtered radio frequency signal is provided.
  • the RX filter comprises a cascade circuit of a bulk acoustic wave, BAW, filter portion, a dual mode SAW filter, DMS filter and a surface acoustic wave, SAW, filter portion.
  • the BAW filter portion comprises at least one BAW resonator and is arranged on an input side of the RX filter.
  • the SAW filter portion comprises at least one SAW resonator and is arranged on an output side of the RX filter.
  • the DMS filter is arranged between the BAW filter portion and the SAW filter portion.
  • real acoustic wave resonators may exhibit a non-linear behaviour, which can always produce harmonics whose frequencies are not necessarily an even multiple of the basic mode. Such harmonics are far enough away from the basic mode, but can interfere with other bands.
  • carrier-aggregation-application multiplexers and duplexers a single filter element with poor linear behaviour can spoil a third-order intermodulation performance of the whole multiplexer or duplexer.
  • SAW receiving filters for multiplexing applications with high out of band attenuation can be realized in small factors, especially when using DMS filter structures.
  • DMS filter structures have the disadvantage that filters show more spurious modes affecting other bands in the multiplexing and poor linearity in odd order, in particular they create more third harmonics and intermodulation products of third order in comparison with BAW filters.
  • BAW filters offer high out of band reflection, are basically free of spurious modes and have excellent linearity behaviour in the odd order.
  • a big disadvantage of the BAW filters is that there is no equivalent to the DMS filter structure, which provides high out of band attenuation in a wide frequency range as required in many multiplexing applications, for example in carrier
  • the RX filter according to the present disclosure allows for combining the good electrical properties of both, the BAW and SAW, technology, and still achieving a small form factor.
  • the benefit of this combination and structure arises from e. g. the SAW
  • DMS structures providing high suppression and from the high linearity of the BAW filter portions.
  • the BAW filter portion comprises a ladder-type topology.
  • acoustic structures of the BAW filter portion and acoustic structures of the SAW filter portion and the acoustic structures of the DMS filter are arranged on a single die.
  • the BAW filter portion and SAW filter portion and DMS filter use silicon-based substrate.
  • the die substrate comprises or consists of a piezo-electrical material like LiTa0 3 or LiNb0 3 with standard SAW resonators or temperature-compensated SAW resonators and BAW resonators structured on the same die.
  • the acoustic structures of the BAW filter portion and the SAW filter portion and the DMS filter are arranged on a same surface of the die. Advantageously this allows for a comparatively simple production.
  • the acoustic structures of the BAW filter portion are arranged on a first surface of the die and the acoustic structures of the SAW filter portion and the DMS filter are arranged on a second surface opposite the first surface.
  • this allows for potentially better utilization of die surface resulting in a smaller component size.
  • the acoustic structures of the BAW filter portion are arranged on a first die and the acoustic structures of the SAW filter portion and the acoustic structures of the DMS filter are arranged on a second die, and the first and second dies are arranged in a stack.
  • the different filter portions and the DMS filter can be arranged in a common package or on a common substrate, e. g. laminate. In particular they can be arranged in a stack in a die-sized SAW package (DSSP- stacked).
  • the acoustic structures of the first die and the second die are respectively arranged on a first surface of the die and the first die and the second die are arranged in the stack such that the first surfaces face each other.
  • the acoustic structures of the first die and the second die are respectively arranged on a first surface of the die and the first die and the second die are arranged in the stack such that the first surfaces are directed towards the carrier. Electromagnetic coupling effects between the two electrode layers can have a negative effect on the filter performance. In this arrangement, the distance between the two layers is greater than in the previous arrangement. The coupling effects are reduced accordingly.
  • an RF duplexer is presented.
  • a duplexer is an electronic device that allows bi-directional (duplex) communication over a single path. In radar and radio communications systems, it isolates the receiver from the transmitter while permitting them to share a common antenna.
  • the duplexer comprises an RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect.
  • the RF duplexer comprises an RF transmitting filter, TX filter.
  • the TX filter comprises an output port and an input port as well as a bulk acoustic wave, BAW, filter portion with at least one BAW resonator.
  • BAW bulk acoustic wave
  • the output port of the TX filter and the input port of the RX filter are configured to be coupled or connected to a common antenna.
  • the acoustic structures of the BAW filter portion of the RX filter and the acoustic structures of the BAW filter portion of the TX filter are arranged on a single die.
  • an RF multiplexer comprises a first RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect.
  • the RF multiplexer comprises at least one further RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect.
  • RX filter are configured to be coupled or to be connected to a common antenna.
  • the BAW filter portion of the first RX filter and the BAW filter portion of the at least one further RX filter are arranged on a first single die.
  • the SAW filter portion and the DMS filter of the first RX filter and the SAW filter portion and the DMS filter of the at least one further RX filter are arranged on a second single die.
  • an RF filter device comprises a first RF duplexer according to the third aspect or an advantageous embodiment of the RF duplexer according to the third aspect.
  • the RF filter device comprises at least one further RF duplexer according to the third aspect or an advantageous embodiment of the RF duplexer according to the third aspect.
  • the input ports of the RX filters and the output ports of the TX filters of the first duplexer and the at least one further RF duplexer are configured to be coupled or connected to a common antenna.
  • the RF filter device may comprise any combination of Tx- Rx- and TRx- (TDD-) filters, e.g. a hexaplexer or octaplexer, which is composed of three or four duplexers, or a pentaplexer, which is composed of two duplexers and an additional Rx-filter or TRx- filter.
  • TDD- TRx-
  • a hexaplexer or octaplexer which is composed of three or four duplexers
  • a pentaplexer which is composed of two duplexers and an additional Rx-filter or TRx- filter.
  • Possible combinations for such pentaplexers are e.g. LTE Band 1 Tx/Rx + LTE Band 3 Tx/Rx + LTE Band 7 Rx or LTE Band 1 Tx/Rx + LTE Band 3 Tx/Rx + LTE Band 40 TRx.
  • the BAW filter portions of the first RF duplexer and the BAW filter portions of the at least one further RF duplexer are arranged on a first single die and/or the SAW filter portions and the DMS filters of the first RF duplexer and the at least one further RF duplexer are arranged on a second single die.
  • Fig. 1 shows a block diagram of an exemplary embodiment of an RF receiving filter
  • Figs. 2a to 2c show different examples of packing and integration of the RF receiving filter
  • Fig. 3 shows a block diagram of an exemplaiy embodiment of an RF duplexer
  • Figs. 4a to 4c show block diagrams of exemplary embodiments of an RF multiplexer
  • Figs. 5a to 5d show block diagrams of exemplary embodiments of a further RF filter device.
  • FIG. 1 shows a block diagram of an exemplary embodiment of an RF receiving filter, RX filter Rx.
  • the RX filter Rx can be used for example in carrier aggregation applications.
  • the RX filter Rx comprises an input port A for receiving a radio frequency signal from an antenna Ant and an output port for providing the filtered radio frequency signal. Furthermore, the RX filter Rx comprises a cascade circuit of a bulk acoustic wave, BAW, filter portion, a surface acoustic wave, SAW, filter portion with at least one SAW resonator, and a dual-mode SAW filter, DMS filter DMS.
  • the BAW filter portion is arranged on an input side of the RX filter Rx.
  • the BAW filter portion ensures a very linear filtering of the radio frequency signal.
  • the SAW filter portion SAW_f which is arranged on an output side of the RX filter Rx and the DMS filter DMS, which is arranged between the BAW filter portion and the SAW filter portion SAW_f, provide a high out-of-band attenuation.
  • the BAW filter portion BAW_f comprises for instance a ladder-type topology.
  • the BAW filter portion BAW_f comprises for example first and second series BAW resonators and a first parallel BAW resonator. Alternatively the topology of the BAW filter portion BAW_f might be simpler or more complex.
  • a piezoelectric material in a piezoelectric layer is sandwiched between a bottom electrode in a bottom electrode layer and a top electrode in a top electrode layer.
  • the piezoelectric material in combination with the electrodes, converts - due to the piezoelectric effect - between acoustic and electromagnetic RF signals.
  • the bottom electrode, the top electrode and the piezoelectric layer sandwiched between the electrodes form an acoustic structure.
  • Such an acoustic structure is arranged on a carrier, in particular on a die or chip.
  • the SAW filter portion comprises for instance a third series SAW resonator S3 and a second parallel SAW resonator P2.
  • the topology of the SAW filter portion SAW_f might be simpler or more complex.
  • An SAW resonator comprises two transducers (interdigital transducer, IDT for short) consisting of a pair of comb-shaped electrodes (also known as fingers) mounted on a die.
  • a substrate of the die comprises silicon or a piezoelectric material.
  • the substrate might consist of silicon or the piezoelectric material.
  • the electrical material is for example LiTa0 3 or LiNb0 3 .
  • a DMS filter DMS is a special kind of surface acoustic wave filter.
  • the DMS filter DMS comprises longitudinally coupled input and output transducers arranged in an acoustic track.
  • the IDTs are arranged between electroacoustic reflectors.
  • Figures 2a to 2c show different examples of packing and integration of the RX filter Rx.
  • Figure 2a shows a packaging configuration, wherein the acoustic structures AS of the BAW filter portion BAW_f are on a first die and the acoustic structures AS of the SAW filter portion SAW_f and the DMS filter DMS are arranged on a second die.
  • the first die is arranged in a first package and the second die is arranged in a second package.
  • the first die and the second die are arranged in a common carrier substrate.
  • BAW die BAW_die a die comprising acoustic structures AS only of BAW resonators
  • SAW_die a die comprising acoustic structures AS only of a SAW resonators, which includes also acoustic structures AS of a DMS filter DMS
  • Figure 2b shows packaging configurations wherein the acoustic structures AS of the BAW filter portion BAW_f are arranged on a BAW die and the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS are arranged on an SAW die SAW_die, and the BAW die BAW_die and the SAW die SAW_die are arranged on a carrier substrate and/ or in a single package in a stack.
  • the acoustic structures AS of the BAW die BAW_die and the SAW die SAW_die are, for example, arranged on a first surface of the respective die.
  • the BAW die BAW_die and the SAW die SAW_die might be arranged in the stack such that the first surfaces face each other.
  • the BAW die BAW_die and the SAW die SAW_die might be arranged in the stack such that the first surfaces are directed towards the same direction, in particular the first surfaces are directed towards the carrier.
  • Figure 2c shows packaging configurations where the acoustic structures AS of the BAW filter portion BAW_f and the acoustic structures AS of the SAW filter portion SAW_f and acoustic structures AS of the DMS filter DMS are arranged on a single die.
  • the acoustic structures AS of the BAW filter portion BAW_f and the SAW filter portion SAW_f and the DMS filter DMS might be are arranged on a same surface of the die.
  • the acoustic structures AS of the BAW filter portion BAW_f are arranged on a first surface of the die and the acoustic structures AS of the SAW filter portion SAW_f and the DMS filter DMS might be arranged on an opposite surface of the first surface.
  • Figure 3 shows a block diagram of an exemplaiy embodiment of an RF duplexer.
  • the resonators of the BAW filter portion BAW_f and the SAW filter portion SAW_f of the RX filter Rx are not shown in detail any more, but generalized filter topologies of resonator networks RN are shown.
  • the RF duplexer is a radio-frequency filter that allows simultaneous transmission in a first frequency band and reception in a second frequency band (different from the first frequency band) using a common antenna Ant.
  • the RF duplexer comprises an RX filter Rx as described above and shown in Figures 1 to 3. Furthermore the RF duplexer comprises an RF transmitting filter, TX filter Tx.
  • the TX filter Tx comprises an output port and an input port as well as a further bulk acoustic wave, BAW, filter portion BAW_f, with at least one BAW resonator, wherein the output port of the TX filter Tx and the input port A of the RX filter Rx are configured to be coupled to a common antenna Ant.
  • the RX filter Rx and the TX filter Tx comprise different pass-bands.
  • the acoustic structures AS of the BAW filter portion BAW_f of the RX filter Rx and the acoustic structures AS of the BAW filter portion BAW_f of the TX filter Tx are arranged on a single BAW die BAW_die.
  • the acoustic structures AS of the BAW filter portion BAW_f of the TX filter Tx and the acoustic structures AS of the BAW filter portion BAW_f the RX filter Rx might be arranged on different BAW dies BAW_die.
  • the RF duplexer uses the same packing configurations as shown in Figures 2a to 2c.
  • Figures 4a to 4c show block diagrams of exemplary embodiments of an RF multiplexer.
  • An RF multiplexer is a radio-frequency filter with more than two ports and with multiple pass-bands.
  • the diplexers comprise at least three ports, one common input port for connecting with antenna Ant and at least two output ports.
  • the diplexers comprise at least two RX filters, for example a first RX filter Rx_i and a further RX filter Rx_2 as described above and shown in Figures 1 to 3.
  • the first and the further RX filters Rx_i, Rx_2 comprise different pass-bands.
  • the acoustic structures AS of the BAW filter portion BAW_fs and the SAW filter portions SAW_f of the first and the further RX filters Rx_i, Rx_2 are each arranged on a separate die.
  • the acoustic structures AS of the SAW filter portions and the acoustic structures AS of the DMS filter DMS of the first RX filter Rx_i are arranged on a common SAW die SAW_die and/ or the acoustic structures AS of the SAW filter portions SAW_f and the acoustic structures AS of the DMS filter DMS of the furter RX filter Rx_2 are arranged on another common SAW die SAW_die(see Figure 4a).
  • the acoustic structures AS of the BAW filter portions BAW_f of the first RX filter Rx_i and the further RX filter Rx_2 might be arranged on a single BAW die BAW_die (see Figure 4b).
  • the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS of the first RX filter RX_i and the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS of the further RX filter Rx_2 are arranged on a second single SAW die SAW_die (see Figure 4c).
  • the RF multiplexer might use the same packing configurations as shown in Figures 2a to 2c.
  • Figures 5a to 5d show block diagrams of exemplary embodiments of a further RF filter device.
  • the RF filter device comprises a first RF duplexer and at least one further RF duplexer as described above and shown in Figure 3.
  • the exemplary embodiments of Figures 5a to 5d show the RF filter device with a first RF duplexer and one further RF duplexer.
  • the input ports of RX filters Rx_i, Rx_2 and the output ports of the TX filters Tx_i, Tx_2 of the first RF duplexer and the further RF duplexer, are configured to be coupled to a common antenna Ant.
  • the acoustic structures AS of the BAW filter portions BAW_f and the SAW filter portions SAW_f as well as the DMS filters DMS might be arranged on at least two different dies as shown in Figures 5a to 5d. In particular two or more BAW filter portions BAW_f can be combined. The same applies to the SAW filter portions SAW_f and DMS filters DMS of the RX filters Rx_i, Rx_2.
  • the substrate of the respective BAW dies BAW_die and/ or SAW dies SAW_die and/ or common dies comprises or consist of, for example, silicon or a piezoelectric material.
  • the piezoelectric material is for example LiTa0 3 or LiNb0 3 .
  • Ant antenna AS acoustic structures

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The RF receiving filter, RX filter (Rx), comprises an input port (A) for receiving a radio frequency signal from an antenna (Ant) and an output port (R) on which the filtered radio frequency signal is provided. The RX filter (Rx) comprises a cascade circuit of a bulk acoustic wave, BAW, filter portion (BAW_f), a dual-mode SAW filter, DMS filter (DMS) and a surface acoustic wave, SAW, filter portion (SAW_f). The BAW filter portion (BAW_f) comprises at least one BAW resonator and is arranged on an input side of the RX filter (Rx). The SAW filter portion (SAW_f) comprises at least one SAW resonator and is arranged on an output side of the RX filter (Rx). The DMS filter (DMS) is arranged between the BAW filter portion (BAW_f) and the SAW filter portion (SAW_f). BAW and SAW portions may be on same or on different dies. Dies may be side-by-side or stacked either facing each other or both directed towards the carrier. SAW and BAW portions may be on the same or on opposite sides of the same die. SAW portions and BAW portions of multiple filters in a multiplexer may be realized together on a common SAW and a common BAW die.

Description

DESCRIPTION
SAW/BAW HYBRID RF RECEIVING FILTER, RF DUPLEXER AND RF MULTIPLEXER
TECHNICAL FIELD
The present disclosure relates to an RF receiving filter. The present disclosure also relates to an RF duplexer, an RF multiplexer and an RF filter device comprising the RF receiving filter.
BACKGROUND
Carrier aggregation is a technique used in wireless communication to increase the data rate per user. In this technique multiple frequency blocks, also called component carriers, are assigned to the same user. The total data rate of a cell is increased as well because of a better resource utilization. In addition load balancing is possible with carrier aggregation.
For such applications radio-frequency filters (RF filters) are required. RF filters typically require many design trade-offs to achieve, for each specific application, the best compromise between performance parameters such as insertion loss, rejection, isolation, power handling, linearity , size and cost.
Electro-acoustic resonators are widely used in electronic devices to realize RF filters including band- reject filters, band-pass filters, duplexers, and multiplexers, oscillators or other frequency-selective electronic components. The resonators comprise a pair of electrodes and a piezoelectric layer. By application of an electrical RF signal to the electrodes, a resonating acoustic wave is generated within the piezoelectric layer, which is frequency-selective with regard to the electrical RF signal. An electronic RF filter may be formed by interconnection of several electro-acoustic resonators that may select a desired frequency band from the received frequency spectrum or shape an electrical signal for transmission.
Several types of electro-acoustic resonators are available such as bulk acoustic wave (BAW) resonators, which sandwich the piezoelectric layer between a pair of bottom and top electrodes, and surface acoustic wave (SAW) resonators, which comprise a pair of interdigital transducer electrodes on the top surface of the piezoelectric layer.
It is an object of the present disclosure to provide an RF filter, an RF multiplexer and an RF duplexer having a good out-of-band attenuation and high linearity. It is a further object of the present disclosure to provide this RF filter, RF multiplexer and RF duplexer with a sufficiently small form factor.
SUMMARY
According to the present disclosure, one or more of the above-mentioned objects are achieved by an RF filter according to the features of present claim 1.
One or more of the above-mentioned objects are also achieved by an RF duplexer according to the features of present claim 10.
One or more of the above-mentioned objects are also achieved by an RF multiplexer according to the features of present claim 12. One or more of the above-mentioned objects are also achieved by an RF multiplexer according to the features of present claim 14.
Advantageous embodiments are given in the sub-claims.
In a first aspect of the present disclosure, an RF receiving filter (RX filter) for receiving an RF signal from an antenna is presented. The RX filter comprises an input port for receiving a radio frequency signal from an antenna and an output port on which the filtered radio frequency signal is provided. The RX filter comprises a cascade circuit of a bulk acoustic wave, BAW, filter portion, a dual mode SAW filter, DMS filter and a surface acoustic wave, SAW, filter portion.
The BAW filter portion comprises at least one BAW resonator and is arranged on an input side of the RX filter. The SAW filter portion comprises at least one SAW resonator and is arranged on an output side of the RX filter. The DMS filter is arranged between the BAW filter portion and the SAW filter portion.
However, in real acoustic wave resonator devices undesired, spurious modes maybe excited in addition to desired acoustic modes. The undesired, spurious acoustic modes deteriorate the corresponding filter’s performance.
Furthermore, real acoustic wave resonators may exhibit a non-linear behaviour, which can always produce harmonics whose frequencies are not necessarily an even multiple of the basic mode. Such harmonics are far enough away from the basic mode, but can interfere with other bands. In particular, in carrier-aggregation-application multiplexers and duplexers a single filter element with poor linear behaviour can spoil a third-order intermodulation performance of the whole multiplexer or duplexer.
SAW receiving filters for multiplexing applications with high out of band attenuation can be realized in small factors, especially when using DMS filter structures. However, such filters have the disadvantage that filters show more spurious modes affecting other bands in the multiplexing and poor linearity in odd order, in particular they create more third harmonics and intermodulation products of third order in comparison with BAW filters. BAW filters, on the other hand, offer high out of band reflection, are basically free of spurious modes and have excellent linearity behaviour in the odd order. A big disadvantage of the BAW filters is that there is no equivalent to the DMS filter structure, which provides high out of band attenuation in a wide frequency range as required in many multiplexing applications, for example in carrier
aggregation. Therefore a pure BAW solution for an RF receiving filter has a much bigger form factor and in most cases requires additional coils for creating
electromagnetic poles adding also to the space budget.
The RX filter according to the present disclosure allows for combining the good electrical properties of both, the BAW and SAW, technology, and still achieving a small form factor. The benefit of this combination and structure arises from e. g. the SAW
DMS structures providing high suppression and from the high linearity of the BAW filter portions.
According to embodiments of the first aspect, the BAW filter portion comprises a ladder-type topology.
According to embodiments of the first aspect, acoustic structures of the BAW filter portion and acoustic structures of the SAW filter portion and the acoustic structures of the DMS filter are arranged on a single die. Preferably, when using a single die thin film SAW technology is used and the BAW filter portion and SAW filter portion and DMS filter use silicon-based substrate. Alternatively the die substrate comprises or consists of a piezo-electrical material like LiTa03 or LiNb03 with standard SAW resonators or temperature-compensated SAW resonators and BAW resonators structured on the same die. According to embodiments of the first aspect, the acoustic structures of the BAW filter portion and the SAW filter portion and the DMS filter are arranged on a same surface of the die. Advantageously this allows for a comparatively simple production.
According to embodiments of the first aspect, the acoustic structures of the BAW filter portion are arranged on a first surface of the die and the acoustic structures of the SAW filter portion and the DMS filter are arranged on a second surface opposite the first surface. Advantageously this allows for potentially better utilization of die surface resulting in a smaller component size.
According to embodiments of the first aspect, the acoustic structures of the BAW filter portion are arranged on a first die and the acoustic structures of the SAW filter portion and the acoustic structures of the DMS filter are arranged on a second die, and the first and second dies are arranged in a stack. Thus, the different filter portions and the DMS filter can be arranged in a common package or on a common substrate, e. g. laminate. In particular they can be arranged in a stack in a die-sized SAW package (DSSP- stacked).
According to embodiments of the first aspect, the acoustic structures of the first die and the second die are respectively arranged on a first surface of the die and the first die and the second die are arranged in the stack such that the first surfaces face each other. This has the advantage that the two acoustic layers can be encapsulated together, e.g. by a surrounding copper or polymer frame between the two dies (see die-sized SAW package).
According to embodiments of the first aspect, the acoustic structures of the first die and the second die are respectively arranged on a first surface of the die and the first die and the second die are arranged in the stack such that the first surfaces are directed towards the carrier. Electromagnetic coupling effects between the two electrode layers can have a negative effect on the filter performance. In this arrangement, the distance between the two layers is greater than in the previous arrangement. The coupling effects are reduced accordingly. In a second aspect of the present disclosure, an RF duplexer is presented. A duplexer is an electronic device that allows bi-directional (duplex) communication over a single path. In radar and radio communications systems, it isolates the receiver from the transmitter while permitting them to share a common antenna. The duplexer comprises an RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect.
In addition, the RF duplexer comprises an RF transmitting filter, TX filter. The TX filter comprises an output port and an input port as well as a bulk acoustic wave, BAW, filter portion with at least one BAW resonator. The output port of the TX filter and the input port of the RX filter are configured to be coupled or connected to a common antenna.
According to embodiments of the second aspect, the acoustic structures of the BAW filter portion of the RX filter and the acoustic structures of the BAW filter portion of the TX filter are arranged on a single die.
In a third aspect of the present disclosure, an RF multiplexer is presented. The RF multiplexer comprises a first RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect.
Furthermore, the RF multiplexer comprises at least one further RX filter according to the first aspect or an advantageous embodiment of the RX filter according to the first aspect. The input port of the first RX filter and the input port of the at least one further
RX filter are configured to be coupled or to be connected to a common antenna.
According to embodiments of the third aspect, the BAW filter portion of the first RX filter and the BAW filter portion of the at least one further RX filter are arranged on a first single die. Alternatively or in addition, the SAW filter portion and the DMS filter of the first RX filter and the SAW filter portion and the DMS filter of the at least one further RX filter are arranged on a second single die.
In a fourth aspect of the present disclosure, an RF filter device is presented. The RF filter device comprises a first RF duplexer according to the third aspect or an advantageous embodiment of the RF duplexer according to the third aspect. In addition the RF filter device comprises at least one further RF duplexer according to the third aspect or an advantageous embodiment of the RF duplexer according to the third aspect. The input ports of the RX filters and the output ports of the TX filters of the first duplexer and the at least one further RF duplexer, are configured to be coupled or connected to a common antenna.
The RF filter device may comprise any combination of Tx- Rx- and TRx- (TDD-) filters, e.g. a hexaplexer or octaplexer, which is composed of three or four duplexers, or a pentaplexer, which is composed of two duplexers and an additional Rx-filter or TRx- filter. Possible combinations for such pentaplexers are e.g. LTE Band 1 Tx/Rx + LTE Band 3 Tx/Rx + LTE Band 7 Rx or LTE Band 1 Tx/Rx + LTE Band 3 Tx/Rx + LTE Band 40 TRx.
According to embodiments of the fourth aspect, the BAW filter portions of the first RF duplexer and the BAW filter portions of the at least one further RF duplexer are arranged on a first single die and/or the SAW filter portions and the DMS filters of the first RF duplexer and the at least one further RF duplexer are arranged on a second single die. BRIEF DESCRIPTION OF THE DRAWINGS
It is to be understood that both the foregoing general description and the following detailed description are merely exemplary, and are intended to provide an overview or framework to understand the nature and character of the claims. The accompanying drawings are included to provide a further understanding and are incorporated in, and constitute a part of, this description. The drawings illustrate one or more embodiments, and together with the description serve to explain principles and operation of the various embodiments. The same elements in different figures of the drawings are denoted by the same reference signs.
The drawings are not necessarily drawn to scale but are configured to clearly illustrate the disclosure.
Fig. 1 shows a block diagram of an exemplary embodiment of an RF receiving filter,
Figs. 2a to 2c show different examples of packing and integration of the RF receiving filter,
Fig. 3 shows a block diagram of an exemplaiy embodiment of an RF duplexer,
Figs. 4a to 4c show block diagrams of exemplary embodiments of an RF multiplexer, and
Figs. 5a to 5d show block diagrams of exemplary embodiments of a further RF filter device. DETAILED DESCRIPTION OF EMBODIMENTS
The present disclosure will now be described in greater detail hereinafter with reference to the accompanying drawings showing embodiments of the disclosure. The disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will fully convey the scope of the disclosure to those skilled in the art. While features of the present disclosure may be discussed relative to certain embodiments and figures below, all embodiments of the present disclosure can include one or more of the advantageous features discussed herein. In other words, while one or more embodiments may be discussed as having certain advantageous features, one or more of such features may also be used in accordance with the various embodiments of the disclosure discussed herein. In similar fashion, while exemplary embodiments may be discussed below as device, system, or method embodiments it should be understood that such exemplary embodiments can be implemented in various devices, systems, and methods.
Figure 1 shows a block diagram of an exemplary embodiment of an RF receiving filter, RX filter Rx. The RX filter Rx can be used for example in carrier aggregation applications.
The RX filter Rx comprises an input port A for receiving a radio frequency signal from an antenna Ant and an output port for providing the filtered radio frequency signal. Furthermore, the RX filter Rx comprises a cascade circuit of a bulk acoustic wave, BAW, filter portion, a surface acoustic wave, SAW, filter portion with at least one SAW resonator, and a dual-mode SAW filter, DMS filter DMS.
The BAW filter portion is arranged on an input side of the RX filter Rx. The BAW filter portion ensures a very linear filtering of the radio frequency signal. The SAW filter portion SAW_f, which is arranged on an output side of the RX filter Rx and the DMS filter DMS, which is arranged between the BAW filter portion and the SAW filter portion SAW_f, provide a high out-of-band attenuation. The BAW filter portion BAW_f comprises for instance a ladder-type topology. The BAW filter portion BAW_f comprises for example first and second series BAW resonators and a first parallel BAW resonator. Alternatively the topology of the BAW filter portion BAW_f might be simpler or more complex.
In a BAW resonator a piezoelectric material in a piezoelectric layer is sandwiched between a bottom electrode in a bottom electrode layer and a top electrode in a top electrode layer. The piezoelectric material, in combination with the electrodes, converts - due to the piezoelectric effect - between acoustic and electromagnetic RF signals.
The bottom electrode, the top electrode and the piezoelectric layer sandwiched between the electrodes form an acoustic structure. Such an acoustic structure is arranged on a carrier, in particular on a die or chip.
The SAW filter portion comprises for instance a third series SAW resonator S3 and a second parallel SAW resonator P2. Alternatively the topology of the SAW filter portion SAW_f might be simpler or more complex.
An SAW resonator comprises two transducers (interdigital transducer, IDT for short) consisting of a pair of comb-shaped electrodes (also known as fingers) mounted on a die. A substrate of the die comprises silicon or a piezoelectric material. In particular the substrate might consist of silicon or the piezoelectric material. The electrical material is for example LiTa03 or LiNb03.
A DMS filter DMS is a special kind of surface acoustic wave filter.
The DMS filter DMS comprises longitudinally coupled input and output transducers arranged in an acoustic track. The DMS filter DMS comprises one or more input IDTs and one or more output IDTs (IDT = interdigital transducer). The IDTs are arranged between electroacoustic reflectors. Figures 2a to 2c show different examples of packing and integration of the RX filter Rx.
Figure 2a shows a packaging configuration, wherein the acoustic structures AS of the BAW filter portion BAW_f are on a first die and the acoustic structures AS of the SAW filter portion SAW_f and the DMS filter DMS are arranged on a second die. For instance, the first die is arranged in a first package and the second die is arranged in a second package. Alternatively, the first die and the second die are arranged in a common carrier substrate.
In the following a die comprising acoustic structures AS only of BAW resonators is called a BAW die BAW_die and a die comprising acoustic structures AS only of a SAW resonators, which includes also acoustic structures AS of a DMS filter DMS, is called an SAW die SAW_die.
Figure 2b shows packaging configurations wherein the acoustic structures AS of the BAW filter portion BAW_f are arranged on a BAW die and the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS are arranged on an SAW die SAW_die, and the BAW die BAW_die and the SAW die SAW_die are arranged on a carrier substrate and/ or in a single package in a stack.
According to Figure 2b the acoustic structures AS of the BAW die BAW_die and the SAW die SAW_die are, for example, arranged on a first surface of the respective die. As shown in Figure 2b (l) the BAW die BAW_die and the SAW die SAW_die might be arranged in the stack such that the first surfaces face each other.
Alternatively, as shown in Figure 2b (2), the BAW die BAW_die and the SAW die SAW_die might be arranged in the stack such that the first surfaces are directed towards the same direction, in particular the first surfaces are directed towards the carrier. Figure 2c shows packaging configurations where the acoustic structures AS of the BAW filter portion BAW_f and the acoustic structures AS of the SAW filter portion SAW_f and acoustic structures AS of the DMS filter DMS are arranged on a single die.
As shown in Figure 2c (l) the acoustic structures AS of the BAW filter portion BAW_f and the SAW filter portion SAW_f and the DMS filter DMS might be are arranged on a same surface of the die.
Alternatively, as shown in Figure 2c (2) the acoustic structures AS of the BAW filter portion BAW_f are arranged on a first surface of the die and the acoustic structures AS of the SAW filter portion SAW_f and the DMS filter DMS might be arranged on an opposite surface of the first surface.
Figure 3 shows a block diagram of an exemplaiy embodiment of an RF duplexer. In Figure 3 and the following figures the resonators of the BAW filter portion BAW_f and the SAW filter portion SAW_f of the RX filter Rx are not shown in detail any more, but generalized filter topologies of resonator networks RN are shown.
The RF duplexer is a radio-frequency filter that allows simultaneous transmission in a first frequency band and reception in a second frequency band (different from the first frequency band) using a common antenna Ant.
The RF duplexer comprises an RX filter Rx as described above and shown in Figures 1 to 3. Furthermore the RF duplexer comprises an RF transmitting filter, TX filter Tx. The TX filter Tx comprises an output port and an input port as well as a further bulk acoustic wave, BAW, filter portion BAW_f, with at least one BAW resonator, wherein the output port of the TX filter Tx and the input port A of the RX filter Rx are configured to be coupled to a common antenna Ant. The RX filter Rx and the TX filter Tx comprise different pass-bands. In an optional embodiment, the acoustic structures AS of the BAW filter portion BAW_f of the RX filter Rx and the acoustic structures AS of the BAW filter portion BAW_f of the TX filter Tx are arranged on a single BAW die BAW_die. Alternatively the acoustic structures AS of the BAW filter portion BAW_f of the TX filter Tx and the acoustic structures AS of the BAW filter portion BAW_f the RX filter Rx might be arranged on different BAW dies BAW_die.
Furthermore, in further optional embodiments the RF duplexer uses the same packing configurations as shown in Figures 2a to 2c.
Figures 4a to 4c show block diagrams of exemplary embodiments of an RF multiplexer.
An RF multiplexer is a radio-frequency filter with more than two ports and with multiple pass-bands.
In Figures 4a to 4c respective diplexers are shown. The diplexers comprise at least three ports, one common input port for connecting with antenna Ant and at least two output ports. The diplexers comprise at least two RX filters, for example a first RX filter Rx_i and a further RX filter Rx_2 as described above and shown in Figures 1 to 3. The first and the further RX filters Rx_i, Rx_2 comprise different pass-bands.
For example, the acoustic structures AS of the BAW filter portion BAW_fs and the SAW filter portions SAW_f of the first and the further RX filters Rx_i, Rx_2 are each arranged on a separate die. Preferably, the acoustic structures AS of the SAW filter portions and the acoustic structures AS of the DMS filter DMS of the first RX filter Rx_i are arranged on a common SAW die SAW_die and/ or the acoustic structures AS of the SAW filter portions SAW_f and the acoustic structures AS of the DMS filter DMS of the furter RX filter Rx_2 are arranged on another common SAW die SAW_die(see Figure 4a). In an optional embodiment, the acoustic structures AS of the BAW filter portions BAW_f of the first RX filter Rx_i and the further RX filter Rx_2 might be arranged on a single BAW die BAW_die (see Figure 4b).
Alternatively or additionally, the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS of the first RX filter RX_i and the acoustic structures AS of the SAW filter portion SAW_f and the acoustic structures AS of the DMS filter DMS of the further RX filter Rx_2 are arranged on a second single SAW die SAW_die (see Figure 4c).
Furthermore, in further optional embodiments the RF multiplexer might use the same packing configurations as shown in Figures 2a to 2c.
Figures 5a to 5d show block diagrams of exemplary embodiments of a further RF filter device. The RF filter device comprises a first RF duplexer and at least one further RF duplexer as described above and shown in Figure 3. The exemplary embodiments of Figures 5a to 5d show the RF filter device with a first RF duplexer and one further RF duplexer. The input ports of RX filters Rx_i, Rx_2 and the output ports of the TX filters Tx_i, Tx_2 of the first RF duplexer and the further RF duplexer, are configured to be coupled to a common antenna Ant.
The acoustic structures AS of the BAW filter portions BAW_f and the SAW filter portions SAW_f as well as the DMS filters DMS might be arranged on at least two different dies as shown in Figures 5a to 5d. In particular two or more BAW filter portions BAW_f can be combined. The same applies to the SAW filter portions SAW_f and DMS filters DMS of the RX filters Rx_i, Rx_2. The substrate of the respective BAW dies BAW_die and/ or SAW dies SAW_die and/ or common dies comprises or consist of, for example, silicon or a piezoelectric material. The piezoelectric material is for example LiTa03 or LiNb03.
REFERENCE SIGNS
A input port of RX filter
Ant antenna AS acoustic structures
BAW_f BAW filter portion
DMS DMS filter Pi, P2 parallel resonator R output port of RX filter
RN resonator network
Rx, Rx_i, Rx _ 2 RX filter
Si, S2, S3 series resonator SAW_f SAW filter portion
T input port of TX filter
Tx, Tx_i, Tx_2 TX filter

Claims

Claims
l. An RF receiving filter, RX filter (Rx), comprising an input port (A) for receiving a radio frequency signal from an antenna and an output port (R) for providing the filtered radio frequency signal, and a cascade circuit of a bulk acoustic wave, BAW, filter portion (BAW_f), a surface acoustic wave, SAW, filter portion (SAW_f) with at least one SAW resonator, and a dual-mode SAW filter, DMS filter (DMS), wherein the BAW filter portion (BAW_f) comprises at least one BAW resonator and is arranged on an input side of the RX filter (Rx),
the SAW filter portion (SAW_f) comprises at least one SAW resonator and is arranged on an output side of the RX filter(Rx), and
the DMS filter (DMS) is arranged between the BAW filter portion (BAW_f) and the SAW filter portion (SAW_f).
2. The RX filter (Rx) according to claim 1, wherein the BAW filter portion (BAW_f) comprises a ladder-type topology.
3. The RX filter (Rx) according to claim 2, wherein the BAW filter portion (BAW_f) comprises a first and a second series BAW resonator (Si, S2) and a first parallel BAW resonator (Pi).
4. The RX filter (Rx) according to any one of claims 1 to 3 wherein acoustic structures (AS) of the BAW filter portion (BAW_f) and acoustic structures (AS) of the SAW filter (SAW_f) portion and acoustic structures (AS) of the DMS filter (DMS) are arranged on a single die.
5. The RX filter (Rx) according to claim 4, wherein the acoustic structures (AS) of the BAW filter portion (BAW_f) and the SAW filter portion (SAW_f) and the DMS filter (DMS) are arranged on a same surface of the die.
6. The RX filter (Rx) according to claim 4, wherein the acoustic structures (AS) of the BAW filter portion (BAW_f) are arranged on a first surface of the die and the acoustic structures (AS) of the SAW filter portion (SAW_f) and the DMS filter (DMS) are arranged on an opposite surface of the first surface.
7. The RX filter (Rx) according to any one of claims 1 to 3, wherein the acoustic structures (AS) of the BAW filter portion (BAW_f) are arranged on a first die and the acoustic structures (AS) of the SAW filter portion (SAW_f) and the acoustic structures (AS) of the DMS filter (DMS) are arranged on a second die, and the first and second dies are arranged in a stack.
8. The RX filter (Rx) according to claim 7, wherein the acoustic structures (AS) of the first die and the second die are respectively arranged on a first surface of the die, and the first die and the second die are arranged in the stack such that the first surfaces face each other.
9. The RX filter (Rx) according to claim 7, wherein the acoustic structures (AS) of the first die and the second die are respectively arranged on a first surface of the die, and the first die and the second die are arranged in the stack such that the first surfaces are directed towards the carrier.
10. An RF duplexer comprising
- an RX filter (Rx) according to any one of claims 1 to 9,
- an RF transmitting filter, TX filter, (Tx) comprising an output port (T) and an input port as well as a bulk acoustic wave, BAW, filter portion, (BAW_f) with at least one
BAW resonator, wherein the output port of the TX filter (Tx) and the input port (A) of the RX filter (Rx) are configured to be coupled to a common antenna (Ant).
li. The RF duplexer according to claim 10, wherein the acoustic structures (AS) of the BAW filter portion (BAW_f) of the RX filter (Rx) and the acoustic structures (AS) of the BAW filter portion (BAW_f) of the TX filter (Tx) are arranged on a single die.
12. An RF multiplexer comprising
- a first RX filter (Rx_i) according to any one of claims 1 to 9,
- at least one further RX filter (Rx_2) according to any one of claims 1 to 9, wherein the input port of the first RX filter (Rx_i) and the input port of the at least one further RX filter (RX_2) are configured to be coupled to a common antenna (Ant).
13. The RF multiplexer according to claim 12, wherein the acoustic structures (AS) of the BAW filter portion (BAW_f) of the first RX filter (Rx_i) and the acoustic structures (AS) of the BAW filter portion (BAW_f ) of the at least one further RX filter (Rx_2) are arranged on a first single die and/or wherein the acoustic structures (AS) of the SAW filter portion (SAW_f) and the acoustic structures (AS) of the DMS filter (DMS) of the first RX filter (Rx_i) and the acoustic structures (AS) of the SAW filter portion (SAW_f) and the acoustic structures (AS) of the DMS filter (DMS) of the at least one further RX filter (Rx_2) are arranged on a second single die.
14. An RF filter device, comprising - a first RF duplexer according to claim 12 or claim 13,
- at least one further RF duplexer according to claim 12 or claim 13, wherein the input ports of the RX filters (Rx_i, Rx_2) and the output ports of the TX filters (Tx_i, Tx_2) of the first RF duplexer and the at least one further RF duplexer are configured to be coupled to a common antenna.
15· The RF device according to claim 14, wherein the BAW filter portions (BAW_f) of the first RF duplexer and the BAW filter portions (BAW_f) of the at least one further RF duplexer are arranged on a first single die and/or wherein the SAW filter portions (SAW_f) and the DMS filters (DMS) of the first RF duplexer and the at least one further RF duplexer are arranged on a second single die.
PCT/EP2020/069420 2019-07-19 2020-07-09 Saw/baw hybrid rf receiving filter, rf duplexer and rf multiplexer WO2021013571A1 (en)

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