WO2020228017A1 - Signal generation method, signal generation circuit, and display apparatus - Google Patents

Signal generation method, signal generation circuit, and display apparatus Download PDF

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Publication number
WO2020228017A1
WO2020228017A1 PCT/CN2019/087227 CN2019087227W WO2020228017A1 WO 2020228017 A1 WO2020228017 A1 WO 2020228017A1 CN 2019087227 W CN2019087227 W CN 2019087227W WO 2020228017 A1 WO2020228017 A1 WO 2020228017A1
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signal
output
shift register
clock signal
transistor
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PCT/CN2019/087227
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French (fr)
Chinese (zh)
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黄耀
周洋
张跳梅
李孟
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to CN201980000650.7A priority Critical patent/CN110313028B/en
Priority to PCT/CN2019/087227 priority patent/WO2020228017A1/en
Publication of WO2020228017A1 publication Critical patent/WO2020228017A1/en

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266Details of drivers for scan electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit

Abstract

A signal generation method, a signal generation circuit, and a display apparatus. The signal generation method is used for a shift register, wherein the shift register comprises N cascaded shift register units. The signal generation method comprises: enabling N cascaded shift register units to respectively output N pre-output signals; respectively performing phase inversion on the N pre-output signals to obtain N pre-output phase-inverted signals; and combining an n-th pre-output phase-inverted signal of the N pre-output phase-inverted signals with an (n+1)th pre-output signal of the N pre-output signals to generate an n-th output signal, thereby obtaining N-1 output signals, wherein n is an integer meeting 1 ≤ n ≤ N-1, and N is an integer greater than or equal to two. An output signal generated by the signal generation method can be used for driving a pixel circuit.

Description

信号产生方法、信号发生电路以及显示装置Signal generation method, signal generation circuit and display device 技术领域Technical field
本公开的实施例涉及一种信号产生方法、信号发生电路以及显示装置。The embodiments of the present disclosure relate to a signal generation method, a signal generation circuit, and a display device.
背景技术Background technique
在显示技术领域,为了改善显示画面的质量,提高用户体验,高PPI(Pixels Per Inch,每英寸像素数量)和窄边框的实现逐渐成为研究的方向。近几年随着非晶硅薄膜晶体管或氧化物薄膜晶体管制备工艺的不断提高,可以将驱动电路直接集成在薄膜晶体管阵列基板上构成GOA(Gate driver On Array)来对显示面板进行驱动。GOA技术有助于实现显示面板的窄边框设计,并且可以降低显示面板的生产成本。In the field of display technology, in order to improve the quality of the display picture and the user experience, the realization of high PPI (Pixels Per Inch, the number of pixels per inch) and narrow borders has gradually become the research direction. In recent years, with the continuous improvement of the manufacturing process of amorphous silicon thin film transistors or oxide thin film transistors, the driving circuit can be directly integrated on the thin film transistor array substrate to form a GOA (Gate Driver On Array) to drive the display panel. GOA technology helps to realize the narrow frame design of the display panel, and can reduce the production cost of the display panel.
发明内容Summary of the invention
本公开至少一实施例提供一种信号产生方法,用于移位寄存器,所述移位寄存器包括N个级联的移位寄存器单元,所述信号产生方法包括:使得N个级联的移位寄存器单元分别输出N个预输出信号;对所述N个预输出信号分别进行反相以获得N个预输出反相信号;以及将所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到N-1个输出信号;n为满足1≤n≤N-1的整数,N为大于等于2的整数。At least one embodiment of the present disclosure provides a signal generation method for a shift register. The shift register includes N cascaded shift register units. The signal generation method includes: shifting N cascades The register unit respectively outputs N pre-output signals; respectively inverts the N pre-output signals to obtain N pre-output inverted signals; and outputs the nth pre-output of the N pre-output inverted signals The inverted signal is combined with the n+1th pre-output signal among the N pre-output signals to generate the n-th output signal, thereby obtaining N-1 output signals; n is that 1≤n≤N-1 An integer of, N is an integer greater than or equal to 2.
例如,在本公开一实施例提供的信号产生方法中,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期。For example, in the signal generation method provided by an embodiment of the present disclosure, the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle.
例如,在本公开一实施例提供的信号产生方法中,所述N个预输出反相信号中的第n个预输出反相信号与第n+1个预输出反相信号之间相差一个系统时钟周期。For example, in the signal generation method provided by an embodiment of the present disclosure, the difference between the nth pre-output inverted signal and the n+1th pre-output inverted signal in the N pre-output inverted signals is one system Clock cycle.
例如,在本公开一实施例提供的信号产生方法中,所述移位寄存器中的第2k+1级移位寄存器单元和第2k-1级移位寄存器单元连接以接收所述N个预输出信号中的第2k-1个预输出信号,所述移位寄存器中的第2k+2级移位 寄存器单元和第2k级移位寄存器单元连接以接收所述N个预输出信号中的第2k个预输出信号;k为满足1≤k≤(N/2)的整数。For example, in the signal generation method provided by an embodiment of the present disclosure, the 2k+1 stage shift register unit and the 2k-1 stage shift register unit in the shift register are connected to receive the N pre-outputs The 2k-1th pre-output signal in the signal, the 2k+2th stage shift register unit and the 2kth stage shift register unit in the shift register are connected to receive the 2kth stage of the N pre-output signals A pre-output signal; k is an integer satisfying 1≤k≤(N/2).
例如,本公开一实施例提供的信号产生方法还包括:向所述移位寄存器中的奇数级移位寄存器单元提供第一时钟信号以及第二时钟信号;以及向所述移位寄存器中的偶数级移位寄存器单元提供第三时钟信号以及第四周期信号。For example, the signal generation method provided by an embodiment of the present disclosure further includes: providing a first clock signal and a second clock signal to the odd-numbered shift register unit in the shift register; and providing the even number in the shift register The stage shift register unit provides a third clock signal and a fourth periodic signal.
例如,在本公开一实施例提供的信号产生方法中,所述第一时钟信号与所述第三时钟信号相差一个所述系统时钟周期,且所述第二时钟信号与所述第四时钟信号相差一个系统时钟周期。For example, in the signal generation method provided by an embodiment of the present disclosure, the first clock signal and the third clock signal differ by one system clock period, and the second clock signal and the fourth clock signal The difference is one system clock cycle.
例如,在本公开一实施例提供的信号产生方法中,所述第一时钟信号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号中至少一个的占空比大于50%。For example, in the signal generation method provided by an embodiment of the present disclosure, the duty cycle of at least one of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal is greater than 50%.
例如,在本公开一实施例提供的信号产生方法中,所述第一时钟信号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号的占空比均大于50%。For example, in the signal generation method provided by an embodiment of the present disclosure, the duty ratios of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal are all greater than 50% .
例如,在本公开一实施例提供的信号产生方法中,所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号被配置为控制显示面板的显示区域中的至少两个晶体管导通或截止。For example, in the signal generation method provided by an embodiment of the present disclosure, the n-th pre-output inverted signal among the N pre-output inverted signals and the n+1-th pre-output signal in the N pre-output signals The output signal is configured to control at least two transistors in the display area of the display panel to be turned on or off.
例如,在本公开一实施例提供的信号产生方法中,所述至少两个晶体管包括两种类型不同的晶体管。For example, in the signal generation method provided by an embodiment of the present disclosure, the at least two transistors include two different types of transistors.
本公开至少一实施例还提供一种信号发生电路,包括移位寄存器和反相电路,所述移位寄存器包括N个级联的移位寄存器单元,所述N个级联的移位寄存器单元被配置为分别输出N个预输出信号;所述反相电路被配置为对所述N个预输出信号分别进行反相以获得N个预输出反相信号;将所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到所述信号发生电路的N-1个输出信号;n为满足1≤n≤N-1的整数,N为大于等于2的整数。At least one embodiment of the present disclosure further provides a signal generation circuit, including a shift register and an inverter circuit, the shift register includes N cascaded shift register units, and the N cascaded shift register units Are configured to respectively output N pre-output signals; the inverting circuit is configured to respectively invert the N pre-output signals to obtain N pre-output inverted signals; invert the N pre-outputs The n-th pre-output inverted signal in the signal and the n+1-th pre-output signal among the N pre-output signals are combined to generate the n-th output signal, thereby obtaining N-1 of the signal generating circuit Output signals; n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
例如,在本公开一实施例提供的信号发生电路中,所述反相电路包括N个反相子电路,第m个反相子电路和所述第m级移位寄存器单元连接,且被配置为对所述N个预输出信号中的第m个预输出信号进行反相以获得所述N个预输出反相信号中的第m个预输出反相信号,m为满足0≤m≤N的 整数。For example, in the signal generation circuit provided by an embodiment of the present disclosure, the inverter circuit includes N inverter subcircuits, and the mth inverter subcircuit is connected to the mth stage shift register unit and is configured In order to invert the m-th pre-output signal among the N pre-output signals to obtain the m-th pre-output inverted signal among the N pre-output inverted signals, m is to satisfy 0≤m≤N The integer.
例如,在本公开一实施例提供的信号发生电路中,所述移位寄存器中的第2k+1级移位寄存器单元和第2k-1级移位寄存器单元连接以接收所述N个预输出信号中的第2k-1个预输出信号,所述移位寄存器中的第2k+2级移位寄存器单元和第2k级移位寄存器单元连接以接收所述N个预输出信号中的第2k个预输出信号;k为满足1≤k≤(N/2)的整数。For example, in the signal generation circuit provided by an embodiment of the present disclosure, the 2k+1 stage shift register unit and the 2k-1 stage shift register unit in the shift register are connected to receive the N pre-outputs The 2k-1th pre-output signal in the signal, the 2k+2th stage shift register unit and the 2kth stage shift register unit in the shift register are connected to receive the 2kth stage of the N pre-output signals A pre-output signal; k is an integer satisfying 1≤k≤(N/2).
例如,在本公开一实施例提供的信号发生电路中,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期。For example, in the signal generation circuit provided by an embodiment of the present disclosure, the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle.
例如,本公开一实施例提供的信号发生电路还包括第一时钟信号线、第二时钟信号线、第三时钟信号线以及第四时钟信号线,所述第一时钟信号线与所述移位寄存器中的奇数级移位寄存器单元连接以提供第一时钟信号,所述第二时钟信号线与所述移位寄存器中的所述奇数级移位寄存器单元连接以提供第二时钟信号;所述第三时钟信号线与所述移位寄存器中的偶数级移位寄存器单元连接以提供第三时钟信号,所述第四时钟信号线与所述移位寄存器中的所述偶数级移位寄存器单元连接以提供第四时钟信号。For example, the signal generation circuit provided by an embodiment of the present disclosure further includes a first clock signal line, a second clock signal line, a third clock signal line, and a fourth clock signal line. The first clock signal line and the shifter The odd-numbered shift register units in the register are connected to provide a first clock signal, and the second clock signal line is connected to the odd-numbered shift register units in the shift register to provide a second clock signal; The third clock signal line is connected to the even-numbered shift register unit in the shift register to provide a third clock signal, and the fourth clock signal line is connected to the even-numbered shift register unit in the shift register Connect to provide the fourth clock signal.
例如,在本公开一实施例提供的信号发生电路中,所述第一时钟信号与所述第三时钟信号相差一个所述系统时钟周期,且所述第二时钟信号与所述第四时钟信号相差一个系统时钟周期。For example, in the signal generation circuit provided by an embodiment of the present disclosure, the first clock signal and the third clock signal are different by one system clock period, and the second clock signal is different from the fourth clock signal. The difference is one system clock cycle.
例如,在本公开一实施例提供的信号发生电路中,所述第一时钟信号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号中至少之一的占空比大于50%。For example, in the signal generation circuit provided by an embodiment of the present disclosure, the duty cycle of at least one of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal More than 50%.
本公开至少一实施例还提供一种显示装置,包括本公开的实施例提供的任一信号发生电路。At least one embodiment of the present disclosure further provides a display device including any signal generation circuit provided in the embodiments of the present disclosure.
例如,本公开一实施例提供的显示装置还包括显示面板,所述显示面板包括呈阵列排布的多个像素电路,所述多个像素电路和所述信号发生电路连接,第n行像素电路被配置为接收所述信号发生电路的所述N-1个输出信号中的第n个输出信号,n为满足1≤n≤N-1的整数,N为大于等于2的整数。For example, the display device provided by an embodiment of the present disclosure further includes a display panel, the display panel includes a plurality of pixel circuits arranged in an array, the plurality of pixel circuits are connected to the signal generating circuit, and the pixel circuit in the nth row It is configured to receive the n-th output signal among the N-1 output signals of the signal generating circuit, where n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
例如,在本公开一实施例提供的显示装置中,所述像素电路包括数据写入子电路、驱动子电路、补偿子电路、复位子电路、发光控制子电路以及发光元件,所述第n行像素电路中的补偿子电路以及数据写入子电路被配置为接收所述信号发生电路的所述第n个输出信号。For example, in the display device provided by an embodiment of the present disclosure, the pixel circuit includes a data writing sub-circuit, a driving sub-circuit, a compensation sub-circuit, a reset sub-circuit, a light-emitting control sub-circuit, and a light-emitting element, and the nth row The compensation sub-circuit and the data writing sub-circuit in the pixel circuit are configured to receive the nth output signal of the signal generating circuit.
附图说明Description of the drawings
为了更清楚地说明本公开实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,而非对本公开的限制。In order to explain the technical solutions of the embodiments of the present disclosure more clearly, the following will briefly introduce the drawings of the embodiments. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limit the present disclosure. .
图1为一种像素电路的电路图;Figure 1 is a circuit diagram of a pixel circuit;
图2为对应于图1所示的像素电路工作时的信号时序图;FIG. 2 is a signal timing diagram corresponding to the operation of the pixel circuit shown in FIG. 1;
图3为本公开至少一实施例提供的一种信号产生方法的示意图;FIG. 3 is a schematic diagram of a signal generation method provided by at least one embodiment of the present disclosure;
图4为本公开至少一实施例提供的一种移位寄存器单元和反相子电路的电路图;4 is a circuit diagram of a shift register unit and an inverting sub-circuit provided by at least one embodiment of the present disclosure;
图5为对应于图4所示的电路工作时的一种信号时序图;FIG. 5 is a signal timing diagram corresponding to the operation of the circuit shown in FIG. 4;
图6为本公开至少一实施例提供的一种时钟信号的示意图;6 is a schematic diagram of a clock signal provided by at least one embodiment of the present disclosure;
图7为对应图6的关于充电时间的示意图;FIG. 7 is a schematic diagram of charging time corresponding to FIG. 6;
图8为对应于图4所示的电路工作时的另一种信号时序图;FIG. 8 is a timing diagram of another signal corresponding to the operation of the circuit shown in FIG. 4;
图9为本公开至少一实施例提供的另一种时钟信号的示意图;FIG. 9 is a schematic diagram of another clock signal provided by at least one embodiment of the present disclosure;
图10为对应图9的关于充电时间的示意图;FIG. 10 is a schematic diagram of charging time corresponding to FIG. 9;
图11为本公开至少一实施例提供的一种信号发生电路的示意图;FIG. 11 is a schematic diagram of a signal generating circuit provided by at least one embodiment of the present disclosure;
图12为本公开至少一实施例提供的另一种信号发生电路的示意图;FIG. 12 is a schematic diagram of another signal generating circuit provided by at least one embodiment of the present disclosure;
图13为本公开至少一实施例提供的显示装置的示意图;以及FIG. 13 is a schematic diagram of a display device provided by at least one embodiment of the present disclosure; and
图14为本公开至少一实施例提供的一种像素电路的示意图。FIG. 14 is a schematic diagram of a pixel circuit provided by at least one embodiment of the present disclosure.
具体实施方式Detailed ways
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。In order to make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the protection scope of the present disclosure.
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“一个”、“一”或者“该”等类似词语也不表 示数量限制,而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those with ordinary skills in the field to which this disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. Similarly, similar words such as "a", "one" or "the" do not imply a quantity limit, but mean that there is at least one. "Include" or "include" and other similar words mean that the element or item appearing before the word encompasses the element or item listed after the word and its equivalents, but does not exclude other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
随着显示装置分辨率的不断提高,用于显示装置中的每个像素单元中的像素电路的布局空间越来越小。例如,图1示出了一种像素电路,该像素电路包括6个晶体管和1个存储电容,可以简称为6T1C像素电路。6T1C像素电路相对于7T1C像素电路(包括7个晶体管和1个存储电容)所占用的布局空间更小,所以可以满足显示装置对于更高分辨率的设计要求。With the continuous improvement of the resolution of the display device, the layout space for the pixel circuit in each pixel unit in the display device is getting smaller and smaller. For example, FIG. 1 shows a pixel circuit that includes 6 transistors and 1 storage capacitor, which can be referred to as a 6T1C pixel circuit for short. The 6T1C pixel circuit occupies a smaller layout space than the 7T1C pixel circuit (including 7 transistors and 1 storage capacitor), so it can meet the design requirements of the display device for higher resolution.
例如,如图1所示,该像素电路包括六个晶体管,它们分别为第一晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4、第五晶体管T5、第六晶体管T6,第一晶体管T1为驱动晶体管,其它晶体管为开关晶体管。该像素电路还包括一个存储电容CST,该像素电路用于驱动发光元件进行发光,例如,如图1所示,发光元件可以采用有机发光二极管(OLED)或量子点发光二极管(QLED)。该OLED或QLED可以为各种类型,例如顶发射、底发射等,可以发红光、绿光、蓝光或白光等,本公开的实施例对此不作限制。For example, as shown in Figure 1, the pixel circuit includes six transistors, which are a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a One transistor T1 is a driving transistor, and the other transistors are switching transistors. The pixel circuit also includes a storage capacitor CST. The pixel circuit is used to drive the light-emitting element to emit light. For example, as shown in FIG. 1, the light-emitting element may be an organic light emitting diode (OLED) or a quantum dot light emitting diode (QLED). The OLED or QLED can be of various types, such as top-emission, bottom-emission, etc., and can emit red light, green light, blue light, or white light, which is not limited in the embodiments of the present disclosure.
如图1所示,第一晶体管T1的栅极和第一节点D1连接,第一晶体管T1的第一极和第二节点D2连接,第一晶体管T1的第二极和第三节点D3连接。第二晶体管T2的栅极被配置为接收第一扫描信号Gate1,第二晶体管T2的第一极被配置为接收数据信号DATA,第二晶体管T2的第二极和第二节点D2连接。第三晶体管T3的栅极被配置为接收第二扫描信号Gate2,第三晶体管T3的第一极和第三节点D3连接,第三晶体管T3的第二极和第一节点D1连接。第四晶体管T4的栅极被配置为接收第二扫描信号Gate2,第四晶体管T4的第一极被配置为接收复位电压Vinit,第四晶体管T4的第二极和第四节点D4连接。第五晶体管T5的栅极被配置为接收第一发光控制信号EM1,第五晶体管T5的第一极被配置为接收第一电源电压VDD,第五晶体管T5的第二极和第二节点D2连接。第六晶体管T6的栅极被配置为接收第二发光控制信号EM2,第六晶体管T6的第一极和第三节点D3连接,第六晶体管T6的第二极和第四节点D4连接。发光元件OLED的阳极和第四 节点D4连接,发光元件OLED的阴极被配置为接收第二电源电压VSS。As shown in FIG. 1, the gate of the first transistor T1 is connected to the first node D1, the first electrode of the first transistor T1 is connected to the second node D2, and the second electrode of the first transistor T1 is connected to the third node D3. The gate of the second transistor T2 is configured to receive the first scan signal Gate1, the first pole of the second transistor T2 is configured to receive the data signal DATA, and the second pole of the second transistor T2 is connected to the second node D2. The gate of the third transistor T3 is configured to receive the second scan signal Gate2, the first electrode of the third transistor T3 is connected to the third node D3, and the second electrode of the third transistor T3 is connected to the first node D1. The gate of the fourth transistor T4 is configured to receive the second scan signal Gate2, the first pole of the fourth transistor T4 is configured to receive the reset voltage Vinit, and the second pole of the fourth transistor T4 is connected to the fourth node D4. The gate of the fifth transistor T5 is configured to receive the first light emission control signal EM1, the first electrode of the fifth transistor T5 is configured to receive the first power supply voltage VDD, and the second electrode of the fifth transistor T5 is connected to the second node D2 . The gate of the sixth transistor T6 is configured to receive the second light emission control signal EM2, the first electrode of the sixth transistor T6 is connected to the third node D3, and the second electrode of the sixth transistor T6 is connected to the fourth node D4. The anode of the light emitting element OLED is connected to the fourth node D4, and the cathode of the light emitting element OLED is configured to receive the second power supply voltage VSS.
需要说明的是,在图1所示的像素电路中,第一晶体管T1、第二晶体管T2、第五晶体管T5以及第六晶体管T6为P型晶体管,而第三晶体管T3和第四晶体管T4为N型晶体管,下面结合图2所示的信号时序图对图1所示的像素电路的工作原理进行描述。It should be noted that in the pixel circuit shown in FIG. 1, the first transistor T1, the second transistor T2, the fifth transistor T5, and the sixth transistor T6 are P-type transistors, and the third transistor T3 and the fourth transistor T4 are For N-type transistors, the working principle of the pixel circuit shown in FIG. 1 will be described below in conjunction with the signal timing diagram shown in FIG. 2.
在第一阶段P1中,第三晶体管T3和第四晶体管T4在高电平的第二扫描信号Gate2的控制下被导通,第六晶体管T6在低电平的第二发光控制信号EM2的控制下被导通。第二晶体管T2在高电平的第一扫描信号Gate1的控制下被截止,第五晶体管T5在高电平的第一发光控制信号EM1的控制下被截止。在第一阶段P1中,导通的第四晶体管T4、第六晶体管T6以及第三晶体管T3形成一条复位路径,从而使得存储电容CST可以通过该复位路径放电,从而将第一节点D1、第三节点D3以及第四节点D4的电平同时复位。存储电容CST被复位,使得存储在存储电容CST中的电荷被释放,从而使得后续阶段中的数据信号可以被更迅速、更可靠地存储在存储电容CST中;同时,第四节点D4也被复位,即OLED被复位,从而可以使OLED在发光之前显示为黑态,即不发光,这将改善采用上述像素电路的显示装置的对比度等显示效果。In the first phase P1, the third transistor T3 and the fourth transistor T4 are turned on under the control of the high-level second scan signal Gate2, and the sixth transistor T6 is controlled by the low-level second light-emitting control signal EM2 The bottom is turned on. The second transistor T2 is turned off under the control of the high-level first scan signal Gate1, and the fifth transistor T5 is turned off under the control of the high-level first light emission control signal EM1. In the first stage P1, the turned-on fourth transistor T4, sixth transistor T6, and third transistor T3 form a reset path, so that the storage capacitor CST can be discharged through the reset path, thereby discharging the first node D1, the third node The levels of the node D3 and the fourth node D4 are reset at the same time. The storage capacitor CST is reset, so that the charge stored in the storage capacitor CST is released, so that the data signal in the subsequent stage can be stored in the storage capacitor CST more quickly and reliably; at the same time, the fourth node D4 is also reset That is, the OLED is reset, so that the OLED can be displayed in a black state before emitting light, that is, not emitting light, which will improve the display effect such as the contrast of the display device using the above-mentioned pixel circuit.
在第二阶段P2中,第三晶体管T3和第四晶体管T4在高电平的第二扫描信号Gate2的控制下被导通,第二晶体管T2在低电平的第一扫描信号Gate1的控制下被导通。另外,由于第三晶体管T3导通,第一晶体管T1为二极管连接方式,所以第一晶体管T1保持导通状态。第五晶体管T5在高电平的第一发光控制信号EM1的控制下被截止,第六晶体管T6在高电平的第二发光控制信号EM2的控制下被截止。In the second phase P2, the third transistor T3 and the fourth transistor T4 are turned on under the control of the high-level second scanning signal Gate2, and the second transistor T2 is under the control of the low-level first scanning signal Gate1. Is turned on. In addition, since the third transistor T3 is turned on and the first transistor T1 is in a diode connection mode, the first transistor T1 remains in the on state. The fifth transistor T5 is turned off under the control of the high-level first emission control signal EM1, and the sixth transistor T6 is turned off under the control of the high-level second emission control signal EM2.
在第二阶段P2中,导通的第二晶体管T2、第一晶体管T1以及第三晶体管T3形成一条数据写入路径,从而可以利用第二晶体管T2接收的数据信号DATA对存储电容CST进行充电,从而使得第一节点D1的电平逐渐变大。容易理解,第二节点D2的电平为数据信号DATA对应的电压Vdata,同时根据第一晶体管T1的自身特性,当第一节点D1的电平增大到Vdata+Vth时,第一晶体管T1截止,上述充电过程结束。需要说明的是,Vth表示第一晶体管的阈值电压,由于第一晶体管T1是以P型晶体管为例就行说明的,所以此处阈值电压Vth可以是个负值。经过第二阶段P2后,第一节点D1和第三 节点D3的电平均为Vdata+Vth,也就是说将带有数据信号DATA和阈值电压Vth的电压信息存储在了存储电容CST中,以用于后续OLED进行发光时,提供灰度显示数据和对第一晶体管T1自身的阈值电压进行补偿。In the second phase P2, the turned-on second transistor T2, the first transistor T1, and the third transistor T3 form a data writing path, so that the data signal DATA received by the second transistor T2 can be used to charge the storage capacitor CST. As a result, the level of the first node D1 gradually increases. It is easy to understand that the level of the second node D2 is the voltage Vdata corresponding to the data signal DATA, and according to the characteristics of the first transistor T1, when the level of the first node D1 increases to Vdata+Vth, the first transistor T1 is turned off , The above charging process ends. It should be noted that Vth represents the threshold voltage of the first transistor. Since the first transistor T1 is a P-type transistor as an example, the threshold voltage Vth here may be a negative value. After the second stage P2, the levels of the first node D1 and the third node D3 are both Vdata+Vth, that is to say, the voltage information with the data signal DATA and the threshold voltage Vth is stored in the storage capacitor CST for use When the subsequent OLED emits light, it provides gray scale display data and compensates the threshold voltage of the first transistor T1 itself.
在第三阶段P3中,第二晶体管T2在低电平的第一扫描信号Gate1的控制下被导通,其余晶体管均被截止。第三阶段P3为空白阶段,不进行操作。In the third phase P3, the second transistor T2 is turned on under the control of the low-level first scan signal Gate1, and the remaining transistors are all turned off. The third stage P3 is a blank stage and no operation is performed.
在第四阶段P4中,第五晶体管T5在低电平的第一发光控制信号EM1的控制下被导通,第二晶体管T2在高电平的第一扫描信号Gate1的控制下被截止,第三晶体管T3以及第四晶体管T4在低电平的第二扫描信号Gate2的控制下被截止,第六晶体管T6在高电平的第二发光控制信号EM2的控制下被截止。在第四阶段P4中,导通的第五晶体管T5可以将接收到的第一电源电压VDD提供至第二节点D2,从而使得第二节点D2的电平变为第一电源电压VDD。由于存储电容CST的作用,第一晶体管T1的栅极(即第一节点D1)的电平可以继续保持为Vdata+Vth,第一晶体管T1的第一极(例如,为源极)的电平为第一电源电压VDD,所以第一晶体管T1的栅极的电平和第一极的电平的差的绝对值为|Vgs|=|VDD-(Vdata+Vth)|>|Vth|,从而使得第一晶体管T1被导通。In the fourth phase P4, the fifth transistor T5 is turned on under the control of the low-level first light-emitting control signal EM1, the second transistor T2 is turned off under the control of the high-level first scan signal Gate1, and the first The three transistors T3 and the fourth transistor T4 are turned off under the control of the second scan signal Gate2 of low level, and the sixth transistor T6 is turned off under the control of the second light emission control signal EM2 of high level. In the fourth phase P4, the turned-on fifth transistor T5 can provide the received first power supply voltage VDD to the second node D2, so that the level of the second node D2 becomes the first power supply voltage VDD. Due to the effect of the storage capacitor CST, the level of the gate (ie, the first node D1) of the first transistor T1 can continue to be Vdata+Vth, and the level of the first electrode (for example, the source) of the first transistor T1 Is the first power supply voltage VDD, so the absolute value of the difference between the level of the gate of the first transistor T1 and the level of the first pole is |Vgs|=|VDD-(Vdata+Vth)|>|Vth|, so that The first transistor T1 is turned on.
在第五阶段P5中,第五晶体管T5在低电平的第一发光控制信号EM1的控制下被导通,第六晶体管T6在低电平的第二发光控制信号EM2的控制下被导通,第一晶体管T1继续保持导通状态。第二晶体管T2在高电平的第一扫描信号Gate1的控制下被截止,第三晶体管T3和第四晶体管T4在低电平的第二扫描信号Gate2的控制下被截止。In the fifth stage P5, the fifth transistor T5 is turned on under the control of the low-level first emission control signal EM1, and the sixth transistor T6 is turned on under the control of the low-level second emission control signal EM2 , The first transistor T1 continues to maintain the on state. The second transistor T2 is turned off under the control of the high-level first scan signal Gate1, and the third transistor T3 and the fourth transistor T4 are turned off under the control of the low-level second scan signal Gate2.
在第五阶段P5中,导通的第五晶体管T5、第一晶体管T1以及第六晶体管T6形成了一条驱动发光路径。发光元件OLED的阳极和阴极分别接入了第一电源电压VDD(例如,高电平电压)和第二电源电压VSS(例如,低电平电压),从而使得发光元件OLED在流经第一晶体管T1的驱动电流的作用下发光。第一节点D1的电平可以继续保持为Vdata+Vth,第二节点D2和第三节点D3的电平为第一电源电压VDD。In the fifth stage P5, the turned-on fifth transistor T5, the first transistor T1, and the sixth transistor T6 form a driving light emitting path. The anode and cathode of the light-emitting element OLED are respectively connected to the first power supply voltage VDD (for example, a high-level voltage) and the second power supply voltage VSS (for example, a low-level voltage), so that the light-emitting element OLED flows through the first transistor. Light is emitted by the driving current of T1. The level of the first node D1 may continue to be maintained at Vdata+Vth, and the levels of the second node D2 and the third node D3 are the first power supply voltage VDD.
具体地,流经发光元件OLED的驱动电流I OLED的值可以根据下述公式得出: Specifically, the value of the driving current I OLED flowing through the light-emitting element OLED can be obtained according to the following formula:
I OLED=K(Vgs-Vth) 2 I OLED =K(Vgs-Vth) 2
=K[(Vdata+Vth-VDD)-Vth] 2 =K[(Vdata+Vth-VDD)-Vth] 2
=K(Vdata-VDD) 2 =K(Vdata-VDD) 2
在上述公式中,Vth表示第一晶体管T1的阈值电压,Vgs表示第一晶体管T1的栅极和第一极例如源极之间的电压,K为一常数值。从上述公式可以看出,流经发光元件OLED的驱动电流I OLED不再与第一晶体管T1的阈值电压Vth有关,而只与控制该像素电路发光灰度的数据信号DATA对应的电压Vdata有关,由此可以实现对该像素电路的补偿,解决了驱动晶体管(第一晶体管T1)由于工艺制程及长时间的操作造成阈值电压漂移的问题,消除其对驱动电流I OLED的影响,从而可以改善显示效果。 In the above formula, Vth represents the threshold voltage of the first transistor T1, Vgs represents the voltage between the gate of the first transistor T1 and the first electrode such as the source, and K is a constant value. It can be seen from the above formula that the driving current I OLED flowing through the light-emitting element OLED is no longer related to the threshold voltage Vth of the first transistor T1, but only related to the voltage Vdata corresponding to the data signal DATA that controls the light-emitting gray level of the pixel circuit. This can realize the compensation of the pixel circuit, solve the problem of the threshold voltage drift of the driving transistor (the first transistor T1) due to the process and long-term operation, eliminate its influence on the driving current I OLED , thereby improving the display effect.
如图1和图2所示,由于在图1所示的像素电路中,第二晶体管T2采用P晶体管,所以当该第二晶体管T2的栅极接收的第一扫描信号Gate1为低电平时,第二晶体管T2导通,而当第一扫描信号Gate1为高电平时,第二晶体管T2截止。另外,第三晶体管T3和第四晶体管T4采用N型晶体管,所以当第二扫描信号Gate2为高电平时,第三晶体管T3和第四晶体管T4导通,而当第二扫描信号Gate2为低电平时,第三晶体管T3和第四晶体管T4截止。As shown in FIGS. 1 and 2, since the second transistor T2 uses a P transistor in the pixel circuit shown in FIG. 1, when the first scan signal Gate1 received by the gate of the second transistor T2 is low, The second transistor T2 is turned on, and when the first scan signal Gate1 is at a high level, the second transistor T2 is turned off. In addition, the third transistor T3 and the fourth transistor T4 are N-type transistors, so when the second scan signal Gate2 is high, the third transistor T3 and the fourth transistor T4 are turned on, and when the second scan signal Gate2 is low, Usually, the third transistor T3 and the fourth transistor T4 are turned off.
例如,如图2所示,第一阶段P1、第二阶段P2、第三阶段P3、第四阶段P4和第五阶段P5持续的时间均为一个系统时钟周期H。需要说明的是,在本公开的实施例中,系统时钟周期H例如为显示装置中产生的用于控制该显示装置工作的驱动时序的最小基准单元,其它所有控制信号或时钟信号均是基于该系统时钟周期H的。以下各实施例与此相同,不再赘述。For example, as shown in FIG. 2, the duration of the first phase P1, the second phase P2, the third phase P3, the fourth phase P4, and the fifth phase P5 are all one system clock cycle H. It should be noted that, in the embodiment of the present disclosure, the system clock period H is, for example, the smallest reference unit generated in the display device for controlling the driving timing of the display device, and all other control signals or clock signals are based on this System clock cycle H. The following embodiments are the same and will not be repeated here.
如图2所示,在第一阶段P1和第二阶段P2中,第三晶体管T3和第四晶体管T4导通,在第二阶段P2和第三阶段P3中,第二晶体管T2导通,只有在第二阶段P2中,第二晶体管T2、第三晶体管T3和第四晶体管T4同时导通,从而可以实现对存储电容CST进行充电操作。为了驱动图1中的像素电路正常工作,需要向该像素电路提供如图2所示的第一扫描信号Gate1和第二扫描信号Gate2,该第一扫描信号Gate1和第二扫描信号Gate2并不是彼此互为反相信号,例如,该第一扫描信号Gate1和第二扫描信号Gate2可以分别采用移位寄存器提供。例如,在显示面板技术中,为了实现低成本和窄边框,可以采用GOA(Gate driver On Array)技术将该移位寄存器通过薄膜晶体管工艺集成在显示面板上,从而可以实现窄边框和降低成本等优势。As shown in Figure 2, in the first phase P1 and the second phase P2, the third transistor T3 and the fourth transistor T4 are turned on, and in the second phase P2 and the third phase P3, the second transistor T2 is turned on, only In the second phase P2, the second transistor T2, the third transistor T3, and the fourth transistor T4 are turned on at the same time, so that the storage capacitor CST can be charged. In order to drive the pixel circuit in FIG. 1 to work normally, it is necessary to provide the pixel circuit with the first scan signal Gate1 and the second scan signal Gate2 as shown in FIG. 2. The first scan signal Gate1 and the second scan signal Gate2 are not mutually exclusive. They are mutually inverted signals. For example, the first scan signal Gate1 and the second scan signal Gate2 can be provided by shift registers respectively. For example, in display panel technology, in order to achieve low cost and narrow frame, GOA (Gate Driver On Array) technology can be used to integrate the shift register on the display panel through thin film transistor technology, so that narrow frame and cost reduction can be achieved. Advantage.
综上所述,为了使得图1中的6T1C像素电路可以正常工作,需要向该 6T1C像素电路提供如图2中所示的第一扫描信号Gate1和第二扫描信号Gate2。本公开的至少一实施例提供一种信号产生方法,该信号产生方法例如用于移位寄存器,该移位寄存器包括N个级联的移位寄存器单元,该信号产生方法包括:使得N个级联的移位寄存器单元分别输出N个预输出信号;To sum up, in order to make the 6T1C pixel circuit in FIG. 1 work normally, it is necessary to provide the 6T1C pixel circuit with the first scan signal Gate1 and the second scan signal Gate2 as shown in FIG. 2. At least one embodiment of the present disclosure provides a signal generation method. The signal generation method is used in, for example, a shift register. The shift register includes N cascaded shift register units. The signal generation method includes: The connected shift register units respectively output N pre-output signals;
对N个预输出信号分别进行反相以获得N个预输出反相信号;以及将N个预输出反相信号中的第n个预输出反相信号和N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到N-1个输出信号;n为满足1≤n≤N-1的整数,N为大于等于2的整数。Invert the N pre-output signals respectively to obtain N pre-output inverted signals; and invert the n-th pre-output inverted signal among the N pre-output inverted signals and the n+th in the N pre-output signals One pre-output signal is combined to generate the nth output signal, thereby obtaining N-1 output signals; n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
本公开的至少一实施例还提供一种对应于上述信号产生方法的信号发生电路和显示装置。At least one embodiment of the present disclosure also provides a signal generating circuit and a display device corresponding to the above-mentioned signal generating method.
下面结合附图对本公开的实施例及其示例进行详细说明。The embodiments and examples of the present disclosure will be described in detail below with reference to the accompanying drawings.
本公开的至少一实施例提供一种信号产生方法,该信号产生方法用于移位寄存器,移位寄存器包括N个级联的移位寄存器单元,该信号产生方法包括如下操作步骤。At least one embodiment of the present disclosure provides a signal generation method. The signal generation method is used in a shift register. The shift register includes N cascaded shift register units. The signal generation method includes the following operation steps.
步骤S100:使得N个级联的移位寄存器单元分别输出N个预输出信号;Step S100: Make the N cascaded shift register units respectively output N pre-output signals;
步骤S200:对N个预输出信号分别进行反相以获得N个预输出反相信号;Step S200: Invert the N pre-output signals respectively to obtain N pre-output inverted signals;
步骤S300:将N个预输出反相信号中的第n个预输出反相信号和N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到N-1个输出信号。Step S300: Combine the n-th pre-output inverted signal among the N pre-output inverted signals and the n+1-th pre-output signal among the N pre-output signals to generate the n-th output signal, thereby obtaining N -1 output signal.
这里,n为满足1≤n≤N-1的整数,N为大于等于2的整数。Here, n is an integer satisfying 1≦n≦N-1, and N is an integer greater than or equal to 2.
例如,如图3所示,左侧示出了用于例如栅极驱动电路的一个移位寄存器,该移位寄存器包括N个级联的移位寄存器单元,例如,分别为移位寄存器单元G(0)、G(1)、G(2)、G(3)、G(4)…G(N-2)、G(N-1),在步骤S100中,使得该N个级联的移位寄存器单元分别输出N个预输出信号,例如,分别为POUT(0)、POUT(1)、POUT(2)、POUT(3)、POUT(4)…POUT(N-2)、POUT(N-1)。例如,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期H。For example, as shown in FIG. 3, a shift register used in, for example, a gate drive circuit is shown on the left side. The shift register includes N cascaded shift register units, for example, shift register units G, respectively. (0), G(1), G(2), G(3), G(4)...G(N-2), G(N-1), in step S100, the N cascaded The shift register unit outputs N pre-output signals, for example, POUT(0), POUT(1), POUT(2), POUT(3), POUT(4)...POUT(N-2), POUT( N-1). For example, the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle H.
在步骤S200中,对移位寄存器输出的N个预输出信号分别进行反相以获得N个预输出反相信号,例如,分别为NOUT(0)、NOUT(1)、NOUT(2)、NOUT(3)、NOUT(4)…NOUT(N-2)、NOUT(N-1)。例如,相邻的预输出反相 信号之间相差一个系统时钟周期H。In step S200, the N pre-output signals output by the shift register are respectively inverted to obtain N pre-output inverted signals, for example, NOUT(0), NOUT(1), NOUT(2), NOUT, respectively. (3), NOUT(4)...NOUT(N-2), NOUT(N-1). For example, adjacent pre-output inverted signals differ by one system clock cycle H.
在步骤S300中,将上述N个预输出反相信号中的第n个预输出反相信号NOUT(n-1)和上述N个预输出信号中的第n+1个预输出信号POUT(n)组合以产生第n个输出信号,由此得到N-1个输出信号。In step S300, the n-th pre-output inverted signal NOUT(n-1) among the above-mentioned N pre-output inverted signals and the n+1-th pre-output signal POUT(n-1) among the above-mentioned N pre-output signals ) Is combined to generate the nth output signal, thereby obtaining N-1 output signals.
通过上述信号产生方法所获得的N-1个输出信号例如可以被用于采用如图1所示的像素电路的像素阵列(即采用图1所示的像素电路的像素单元的阵列),例如,第n个输出信号中包括的第n个预输出反相信号NOUT(n-1)可以被用作第二扫描信号Gate2以驱动像素电路中的第三晶体管T3以及第四晶体管T4,第n个输出信号中包括的第n+1个预输出信号POUT(n)可以被用作第一扫描信号Gate1以驱动像素电路中的第二晶体管T2。例如,当多个如图1中所示的像素电路呈阵列排布时,例如,该阵列包括N-1行像素电路,则上述信号产生方法所获的第n个输出信号可以被用于驱动第n行像素电路。n为满足1≤n≤N-1的整数,N为大于等于2的整数。The N-1 output signals obtained by the above-mentioned signal generation method can be used, for example, in a pixel array using the pixel circuit shown in FIG. 1 (that is, an array of pixel units using the pixel circuit shown in FIG. 1), for example, The nth pre-output inverted signal NOUT(n-1) included in the nth output signal can be used as the second scan signal Gate2 to drive the third transistor T3 and the fourth transistor T4 in the pixel circuit, the nth The n+1th pre-output signal POUT(n) included in the output signal may be used as the first scan signal Gate1 to drive the second transistor T2 in the pixel circuit. For example, when a plurality of pixel circuits as shown in FIG. 1 are arranged in an array, for example, the array includes N-1 rows of pixel circuits, the nth output signal obtained by the above-mentioned signal generation method can be used for driving Pixel circuit in the nth row. n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
本公开的至少一实施例提供的信号产生方法产生的输出信号可以用于驱动6T1C像素电路,例如,可以用于驱动如图1所示的6T1C像素电路。需要说明的是,在本公开的实施例中,图1所示的6T1C像素电路仅是用于说明本公开的实施例提供的信号产生方法,而并不表明本公开的实施例提供的信号产生方法只能用于图1所示的6T1C像素电路,只要是采用图2所示的第一扫描信号Gate1和第二扫描信号Gate2进行驱动的像素电路均可以适用于该信号产生方法。The output signal generated by the signal generation method provided by at least one embodiment of the present disclosure can be used to drive a 6T1C pixel circuit, for example, can be used to drive a 6T1C pixel circuit as shown in FIG. 1. It should be noted that in the embodiment of the present disclosure, the 6T1C pixel circuit shown in FIG. 1 is only used to illustrate the signal generation method provided by the embodiment of the present disclosure, but does not indicate the signal generation provided by the embodiment of the present disclosure. The method can only be used for the 6T1C pixel circuit shown in FIG. 1, as long as the pixel circuit is driven by the first scan signal Gate1 and the second scan signal Gate2 shown in FIG. 2 can be applied to this signal generation method.
例如,在一些实施例中,上述移位寄存器中的N个级联的移位寄存器单元中的每一个可以采用如图4所示的示例性移位寄存器单元G(n)。如图4所示,该移位寄存器单元G(n)包括八个晶体管(第一晶体管M1至第八晶体管M8)以及两个电容(第一电容C1和第二电容C2)。For example, in some embodiments, each of the N cascaded shift register units in the aforementioned shift register may adopt an exemplary shift register unit G(n) as shown in FIG. 4. As shown in FIG. 4, the shift register unit G(n) includes eight transistors (first transistor M1 to eighth transistor M8) and two capacitors (first capacitor C1 and second capacitor C2).
如图4所示,第一晶体管M1的栅极被配置接收第一控制信号CR1,第一晶体管M1的第一极被配置为接收输入信号IN,第一晶体管T1的第二极和第一节点N1连接。第二晶体管M2的栅极和第一节点N1连接,第二晶体管M2的第一极被配置为接收第一控制信号CR1,第二晶体管M2的第二极和第二节点N2连接。第三晶体管M3的栅极被配置为接收第一控制信号CR1,第三晶体管M3的第一极被配置为接收第二电平电压VL,第三晶体管M3的第二极和第二节点N2连接。第四晶体管M4的栅极和第二节点N2连 接,第四晶体管M4的第一极被配置为接收第一电平电压VH,第四晶体管M4的第二极和第一输出端PT连接。第五晶体管M5的栅极和第四节点N4连接,第五晶体管M5的第一极被配置为接收第二控制信号CR2,第五晶体管M5的第二极和第一输出端PT连接。第六晶体管M6的栅极和第二节点N2连接,第六晶体管M6的第一极被配置为接收第一电平电压VH,第六晶体管M6的第二极和第三节点N3连接。第七晶体管M7的栅极被配置为接收第二控制信号CR2,第七晶体管M7的第一极和第三节点N3连接,第七晶体管M7的第二极和第一节点N1连接。第八晶体管M8的栅极被配置为接收第二电平电压VL,第八晶体管M8的第一极和第一节点N1连接,第八晶体管M8的第二极和第四节点N4连接。第一电容C1的第一极和第四节点N4连接,第一电容C1的第二极和第一输出端PT连接。第二电容C2的第一极和第二节点N2连接,第二电容C2的第二极被配置为接收第一电平电压VH。第一输出端PT被配置为输出预输出信号POUT(n)。As shown in FIG. 4, the gate of the first transistor M1 is configured to receive the first control signal CR1, the first pole of the first transistor M1 is configured to receive the input signal IN, the second pole of the first transistor T1 and the first node N1 connection. The gate of the second transistor M2 is connected to the first node N1, the first electrode of the second transistor M2 is configured to receive the first control signal CR1, and the second electrode of the second transistor M2 is connected to the second node N2. The gate of the third transistor M3 is configured to receive the first control signal CR1, the first pole of the third transistor M3 is configured to receive the second level voltage VL, and the second pole of the third transistor M3 is connected to the second node N2 . The gate of the fourth transistor M4 is connected to the second node N2, the first electrode of the fourth transistor M4 is configured to receive the first level voltage VH, and the second electrode of the fourth transistor M4 is connected to the first output terminal PT. The gate of the fifth transistor M5 is connected to the fourth node N4, the first electrode of the fifth transistor M5 is configured to receive the second control signal CR2, and the second electrode of the fifth transistor M5 is connected to the first output terminal PT. The gate of the sixth transistor M6 is connected to the second node N2, the first electrode of the sixth transistor M6 is configured to receive the first level voltage VH, and the second electrode of the sixth transistor M6 is connected to the third node N3. The gate of the seventh transistor M7 is configured to receive the second control signal CR2, the first electrode of the seventh transistor M7 is connected to the third node N3, and the second electrode of the seventh transistor M7 is connected to the first node N1. The gate of the eighth transistor M8 is configured to receive the second level voltage VL, the first pole of the eighth transistor M8 is connected to the first node N1, and the second pole of the eighth transistor M8 is connected to the fourth node N4. The first pole of the first capacitor C1 is connected to the fourth node N4, and the second pole of the first capacitor C1 is connected to the first output terminal PT. The first pole of the second capacitor C2 is connected to the second node N2, and the second pole of the second capacitor C2 is configured to receive the first level voltage VH. The first output terminal PT is configured to output the pre-output signal POUT(n).
例如,图4还示出了一种示例性的反相子电路IP(n),该反相子电路IP(n)包括四个晶体管(第九晶体管M9至第十二晶体管M12)以及一个第三电容C3。For example, FIG. 4 also shows an exemplary inverting sub-circuit IP(n), which includes four transistors (ninth transistor M9 to twelfth transistor M12) and a first Three capacitors C3.
如图4所示,第九晶体管M9的栅极和第一输出端PT连接,第九晶体管M9的第一极被配置为接收第一电平电压VH,第九晶体管M9的第二极和第五节点N5连接。第十晶体管M10的栅极被配置为接收第一控制信号CR1,第十晶体管M10的第一极和第五节点N5连接,第十晶体管M10的第二极被配置为接收第二电平电压VL。第十一晶体管M11的栅极和第一输出端PT连接,第十一晶体管M11的第一极被配置为接收第一电平电压VH,第十一晶体管M11的第二极和第二输出端NT连接。第十二晶体管M12的栅极和第五节点N5连接,第十二晶体管M12的第一极被配置为接收第二电平电压VL,第十二晶体管M12的第二极和第二输出端NT连接。第三电容C3的第一极和第五节点N5连接,第三电容C3的第二极被配置为接收第二控制信号CR2。第二输出端NT被配置为输出预输出反相信号NOUT(n)。As shown in FIG. 4, the gate of the ninth transistor M9 is connected to the first output terminal PT, the first electrode of the ninth transistor M9 is configured to receive the first level voltage VH, and the second electrode of the ninth transistor M9 is connected to the first output terminal PT. Five-node N5 connection. The gate of the tenth transistor M10 is configured to receive the first control signal CR1, the first pole of the tenth transistor M10 is connected to the fifth node N5, and the second pole of the tenth transistor M10 is configured to receive the second level voltage VL . The gate of the eleventh transistor M11 is connected to the first output terminal PT, the first pole of the eleventh transistor M11 is configured to receive the first level voltage VH, and the second pole of the eleventh transistor M11 is connected to the second output terminal. NT connection. The gate of the twelfth transistor M12 is connected to the fifth node N5, the first pole of the twelfth transistor M12 is configured to receive the second level voltage VL, the second pole of the twelfth transistor M12 and the second output terminal NT connection. The first pole of the third capacitor C3 is connected to the fifth node N5, and the second pole of the third capacitor C3 is configured to receive the second control signal CR2. The second output terminal NT is configured to output the pre-output inverted signal NOUT(n).
需要说明的是,本公开的实施例中采用的晶体管均可以为薄膜晶体管或场效应晶体管或其他特性相同的开关器件。这里采用的晶体管的源极、漏极在结构上可以是对称的,所以其源极、漏极在结构上可以是没有区别的。在本公开的实施例中,为了区分晶体管除栅极之外的两极,直接描述了其中一 极为第一极,另一极为第二极,所以本公开的实施例中全部或部分晶体管的第一极和第二极根据需要是可以互换的。例如,本公开的实施例中所述的晶体管的第一极可以为源极,第二极可以为漏极;或者,晶体管的第一极为漏极,第二极为源极。It should be noted that the transistors used in the embodiments of the present disclosure may be thin film transistors, field effect transistors, or other switching devices with the same characteristics. The source and drain of the transistor used here can be symmetrical in structure, so the source and drain can be structurally indistinguishable. In the embodiments of the present disclosure, in order to distinguish the two poles of the transistor except for the gate, one pole is directly described as the first pole and the other pole is the second pole. Therefore, in the embodiments of the present disclosure, all or part of the transistors have the first pole. The pole and the second pole are interchangeable as needed. For example, in the embodiments of the present disclosure, the first electrode of the transistor may be a source and the second electrode may be a drain; or, the first electrode of the transistor may be a drain and the second electrode may be a source.
此外,按照晶体管的特性区分可以将晶体管分为N型和P型晶体管。当晶体管为P型晶体管时,开启电压为低电平电压(例如,0V、-5V、-10V或其他合适的电压),关闭电压为高电平电压(例如,5V、10V或其他合适的电压);当晶体管为N型晶体管时,开启电压为高电平电压(例如,5V、10V或其他合适的电压),关闭电压为低电平电压(例如,0V、-5V、-10V或其他合适的电压)。In addition, transistors can be divided into N-type and P-type transistors according to their characteristics. When the transistor is a P-type transistor, the turn-on voltage is a low-level voltage (for example, 0V, -5V, -10V or other suitable voltages), and the turn-off voltage is a high-level voltage (for example, 5V, 10V or other suitable voltages) ); When the transistor is an N-type transistor, the turn-on voltage is a high-level voltage (for example, 5V, 10V or other suitable voltages), and the turn-off voltage is a low-level voltage (for example, 0V, -5V, -10V or other suitable Voltage).
另外,在本公开的实施例中,例如,第一电源电压VDD和第一电平电压VH为高电平电压,例如该高电平电压可以使得N型晶体管导通,而使得P型晶体管截止;第二电源电压VSS和第二电平电压VL为低电平电压,例如该低电平电压可以使得P型晶体管导通,而使得N型晶体管截止。以下各实施例与此相同,不再赘述。In addition, in the embodiments of the present disclosure, for example, the first power supply voltage VDD and the first level voltage VH are high-level voltages. For example, the high-level voltage can turn on the N-type transistor and turn off the P-type transistor. ; The second power supply voltage VSS and the second level voltage VL are low-level voltages, for example, the low-level voltage can make the P-type transistor turn on and make the N-type transistor turn off. The following embodiments are the same and will not be repeated here.
在本公开的实施例中,高电平和低电平是相对而言的。高电平表示一个较高的电压范围(例如,高电平可以采用5V、10V或其他合适的电压),且多个高电平可以相同也可以不同。类似地,低电平表示一个较低的电压范围(例如,低电平可以采用0V、-5V、-10V或其他合适的电压),且多个低电平可以相同也可以不同。例如,高电平的最小值比低电平的最大值大。In the embodiment of the present disclosure, the high level and the low level are relative. The high level indicates a higher voltage range (for example, the high level can be 5V, 10V or other suitable voltages), and multiple high levels can be the same or different. Similarly, the low level represents a lower voltage range (for example, the low level may adopt 0V, -5V, -10V or other suitable voltages), and multiple low levels may be the same or different. For example, the minimum value of the high level is greater than the maximum value of the low level.
另外,图4所示的晶体管(第一晶体管M1至第十二晶体管M12)均以P型晶体管为例进行示意,本公开的实施例包括但不限于此,例如图4中的部分晶体管也可以采用N型晶体管。In addition, the transistors shown in FIG. 4 (the first transistor M1 to the twelfth transistor M12) are all P-type transistors as examples. The embodiments of the present disclosure include but are not limited to this. For example, some of the transistors in FIG. 4 may also Use N-type transistors.
下面结合图5所示的信号时序对图4中的移位寄存器单元G(n)以及反相子电路IP(n)的工作原理进行说明。需要说明的是,如图5所示,第一阶段Q1、第二阶段Q2、第三阶段Q3以及第四阶段Q4的持续时间均为两个系统时钟周期即2H。The working principle of the shift register unit G(n) and the inverting sub-circuit IP(n) in FIG. 4 will be described below in conjunction with the signal timing shown in FIG. 5. It should be noted that, as shown in FIG. 5, the durations of the first phase Q1, the second phase Q2, the third phase Q3, and the fourth phase Q4 are all two system clock cycles, that is, 2H.
如图4和图5所示,在第一阶段Q1中,第一控制信号CR1和输入信号IN为低电平,第二控制信号CR2为高电平。第一晶体管M1在低电平的第一控制信号CR1的控制下被导通,第八晶体管M8在低电平的第二电平电压VL的控制下被导通,从而使得低电平的输入信号IN通过导通的第一晶体管 M1和第八晶体管M8传输至第四节点N4,从而拉低第四节点N4的电平,第五晶体管M5被导通。高电平的第二控制信号CR2通过第五晶体管M5传输至第一输出端PT。As shown in FIGS. 4 and 5, in the first stage Q1, the first control signal CR1 and the input signal IN are at a low level, and the second control signal CR2 is at a high level. The first transistor M1 is turned on under the control of the low-level first control signal CR1, and the eighth transistor M8 is turned on under the control of the low-level second-level voltage VL, thereby enabling a low-level input The signal IN is transmitted to the fourth node N4 through the turned-on first transistor M1 and the eighth transistor M8, thereby pulling down the level of the fourth node N4, and the fifth transistor M5 is turned on. The high-level second control signal CR2 is transmitted to the first output terminal PT through the fifth transistor M5.
第三晶体管M3在低电平的第一控制信号CR1的控制下被导通,低电平的第二电平电压VL通过导通的第三晶体管M3传输至第二节点N2,第四晶体管M4被导通,高电平的第一电平电压VH通过导通的第四晶体管M4传输至第一输出端PT。The third transistor M3 is turned on under the control of the low-level first control signal CR1, and the low-level second-level voltage VL is transmitted to the second node N2 through the turned-on third transistor M3, and the fourth transistor M4 When turned on, the high-level first-level voltage VH is transmitted to the first output terminal PT through the turned-on fourth transistor M4.
高电平的第一电平电压VH以及高电平的第二控制信号CR2都被传输至第一输出端PT,所以在第一阶段Q1中第一输出端PT输出高电平的预输出信号POUT(n)。Both the high-level first-level voltage VH and the high-level second control signal CR2 are transmitted to the first output terminal PT, so in the first stage Q1, the first output terminal PT outputs a high-level pre-output signal POUT(n).
由于第一输出端PT为高电平,所以第九晶体管M9和第十一晶体管M11被截止。第十晶体管M10在低电平的第一控制信号CR1的控制下被导通,低电平的第二电平电压VL通过导通的第十晶体管M10传输至第五节点N5,从而拉低第五节点N5的电平,第十二晶体管M12被导通。低电平的第二电平电压VL通过导通的第十二晶体管M12传输至第二输出端NT,从而使得第二输出端NT输出低电平的预输出反相信号NOUT(n)。Since the first output terminal PT is at a high level, the ninth transistor M9 and the eleventh transistor M11 are turned off. The tenth transistor M10 is turned on under the control of the low-level first control signal CR1, and the low-level second-level voltage VL is transmitted to the fifth node N5 through the turned-on tenth transistor M10, thereby pulling down the At the level of the node N5, the twelfth transistor M12 is turned on. The low-level second-level voltage VL is transmitted to the second output terminal NT through the turned-on twelfth transistor M12, so that the second output terminal NT outputs the low-level pre-output inverted signal NOUT(n).
在第二阶段Q2中,输入信号IN和第一控制信号CR1为高电平,第二控制信号CR2为低电平。第八晶体管M8在低电平的第二电平电压VL的控制下保持导通,由于第一电容C1的作用,第四节点N1和第一节点N1可以保持上一阶段的低电平。第二晶体管M2被导通,高电平的第一控制信号CR1通过导通的第二晶体管M2传输至第二节点N2,从而拉高第二节点N2的电平,第四晶体管M4和第六晶体管M6被截止。In the second stage Q2, the input signal IN and the first control signal CR1 are at a high level, and the second control signal CR2 is at a low level. The eighth transistor M8 is kept on under the control of the low-level second-level voltage VL. Due to the function of the first capacitor C1, the fourth node N1 and the first node N1 can maintain the low level of the previous stage. The second transistor M2 is turned on, the high-level first control signal CR1 is transmitted to the second node N2 through the turned-on second transistor M2, thereby pulling up the level of the second node N2, the fourth transistor M4 and the sixth The transistor M6 is turned off.
由于第四节点N4为低电平,第五晶体管M5保持导通,低电平的第二控制信号CR2通过导通的第五晶体管M5传输至第一输出端PT,所以在第二阶段Q2中第一输出端PT输出低电平的预输出信号POUT(n)。Since the fourth node N4 is at the low level, the fifth transistor M5 remains on, and the low-level second control signal CR2 is transmitted to the first output terminal PT through the turned-on fifth transistor M5, so in the second stage Q2 The first output terminal PT outputs a low-level pre-output signal POUT(n).
由于第一输出端PT为低电平,所以第九晶体管M9和第十一晶体管M11被导通。高电平的第一电平电压VH通过导通的第九晶体管M9被传输至第五节点N5,第十二晶体管M12被截止。高电平的第一电平电压VH通过导通的第十一晶体管M11被传输至第二输出端NT,所以在第二阶段Q2中第二输出端NT输出高电平的预输出反相信号NOUT(n)。Since the first output terminal PT is at a low level, the ninth transistor M9 and the eleventh transistor M11 are turned on. The high-level first-level voltage VH is transmitted to the fifth node N5 through the turned-on ninth transistor M9, and the twelfth transistor M12 is turned off. The high-level first-level voltage VH is transmitted to the second output terminal NT through the turned-on eleventh transistor M11, so in the second stage Q2, the second output terminal NT outputs a high-level pre-output inverted signal NOUT(n).
在第三阶段Q3中,输入信号IN和第二控制信号CR2为高电平,第一 控制信号CR1为低电平。第三晶体管M3在低电平的第一控制信号CR1的控制下被导通,低电平的第二电平电压VL通过导通的第三晶体管M3传输至第二节点N2,所以第四晶体管M4被导通,高电平的第一电平电压VH通过导通的第四晶体管M4被传输至第一输出PT,所以在第三阶段Q3中第一输出端PT输出高电平的预输出信号POUT(n)。In the third stage Q3, the input signal IN and the second control signal CR2 are at a high level, and the first control signal CR1 is at a low level. The third transistor M3 is turned on under the control of the low-level first control signal CR1, and the low-level second-level voltage VL is transmitted to the second node N2 through the turned-on third transistor M3, so the fourth transistor M4 is turned on, the high-level first-level voltage VH is transmitted to the first output PT through the turned-on fourth transistor M4, so in the third stage Q3, the first output terminal PT outputs a high-level pre-output The signal POUT(n).
同时在第三阶段Q3中,第一晶体管M1在低电平的第一控制信号CR1的控制下被导通,高电平的输入信号IN通过导通的第一晶体管M1传输至第一节点N1和第四节点N4,第五晶体管M5截止。At the same time, in the third stage Q3, the first transistor M1 is turned on under the control of the low-level first control signal CR1, and the high-level input signal IN is transmitted to the first node N1 through the turned-on first transistor M1. And the fourth node N4, the fifth transistor M5 is turned off.
由于第一输出端PT为高电平,所以第九晶体管M9和第十一晶体管M11被截止。第十晶体管M10在低电平的第一控制信号CR1的控制下被导通,低电平的第二电平电压通过导通的第十晶体管M10传输至第五节点N5,第十二晶体管M12被导通,低电平的第二电平电压VL通过导通的第十二晶体管M12传输至第二输出端NT,从而在第三阶段Q3中使得第二输出端NT输出低电平的预输出反相信号NOUT(n)。Since the first output terminal PT is at a high level, the ninth transistor M9 and the eleventh transistor M11 are turned off. The tenth transistor M10 is turned on under the control of the low-level first control signal CR1, and the low-level second-level voltage is transmitted to the fifth node N5 through the turned-on tenth transistor M10, and the twelfth transistor M12 Is turned on, the low-level second-level voltage VL is transmitted to the second output terminal NT through the turned-on twelfth transistor M12, so that in the third stage Q3, the second output terminal NT outputs a low-level preset The inverted signal NOUT(n) is output.
在第四阶段Q4中,输入信号IN和第一控制信号CR1为高电平,第二控制信号CR2为低电平。由于第二电容C2的作用,第二节点N2可以保持上一阶段的低电平,所以第四晶体管M4继续保持导通,高电平第一电平电VH通过导通的第四晶体管M4被传输至第一输出端PT。另外,由于第四电容C4的作用,第四节点N4可以保持上一阶段的高电平,所以第五晶体管M5保持截止,从而在第四阶段Q4中使得第一输出端PT继续输出高电平的预输出信号POUT(n)。In the fourth stage Q4, the input signal IN and the first control signal CR1 are high, and the second control signal CR2 is low. Due to the effect of the second capacitor C2, the second node N2 can maintain the low level of the previous stage, so the fourth transistor M4 continues to be turned on, and the high-level first-level voltage VH is passed through the turned-on fourth transistor M4. Transmitted to the first output terminal PT. In addition, due to the function of the fourth capacitor C4, the fourth node N4 can maintain the high level of the previous stage, so the fifth transistor M5 remains off, so that the first output terminal PT continues to output the high level in the fourth stage Q4 The pre-output signal POUT(n).
和上一阶段类似的,在第四阶段Q4中使得第二输出端NT输出低电平的预输出反相信号NOUT(n)。Similar to the previous stage, in the fourth stage Q4, the second output terminal NT is made to output a low-level pre-output inverted signal NOUT(n).
如图5所示,第一输出端PT输出的预输出信号POUT(n)和第二输出端NT输出的预输出反相信号NOUT(n)彼此互为反相信号,即图4中所示的反相子电路IP(n)用于将图4中所示的移位寄存器单元G(n)输出的预输出信号POUT(n)进行反相从而输出预输出反相信号NOUT(n)。As shown in FIG. 5, the pre-output signal POUT(n) output by the first output terminal PT and the pre-output inverse signal NOUT(n) output by the second output terminal NT are mutually inverted signals, as shown in FIG. 4 The inverting sub-circuit IP(n) is used to invert the pre-output signal POUT(n) output by the shift register unit G(n) shown in FIG. 4 to output the pre-output inverted signal NOUT(n).
需要说明的是,图4中所示的反相子电路IP(n)仅是示例性的,本公开的实施例对反相子电路IP(n)采用的具体电路结构不作限定,只要是可以将POUT(n)进行反相从而获得预输出反相信号NOUT(n)即可。It should be noted that the inverting sub-circuit IP(n) shown in FIG. 4 is only exemplary. The embodiment of the present disclosure does not limit the specific circuit structure of the inverting sub-circuit IP(n), as long as it can Invert POUT(n) to obtain the pre-output inverted signal NOUT(n).
另外,图4中所示的移位寄存器单元G(n)也是示例性的,本公开的实施 例对移位寄存器单元G(n)采用的具体电路结构不作限定,只要是第一输出端PT可以输出如图5所示的信号即可。另外,也可以将图4中所示的反相子电路IP(n)当作移位寄存器单元G(n)的一部分,本公开的实施例对此不作限定。In addition, the shift register unit G(n) shown in FIG. 4 is also exemplary. The embodiment of the present disclosure does not limit the specific circuit structure of the shift register unit G(n), as long as it is the first output terminal PT The signal shown in Figure 5 can be output. In addition, the inverting sub-circuit IP(n) shown in FIG. 4 can also be regarded as a part of the shift register unit G(n), which is not limited in the embodiment of the present disclosure.
如图3所示,当N个移位寄存器单元进行级联时,移位寄存器中的第2k+1级移位寄存器单元G(2k+1)和第2k-1级移位寄存器单元G(2k-1)连接以接收N个预输出信号中的第2k-1个预输出信号POUT(2k-1),例如,第2k+1级移位寄存器单元G(2k+1)和第2k-1级移位寄存器单元G(2k-1)的第一输出端PT连接,从而使得第2k-1个预输出信号POUT(2k-1)作为输出信号IN输入第2k+1级移位寄存器单元G(2k+1)。As shown in Figure 3, when N shift register units are cascaded, the 2k+1 stage shift register unit G(2k+1) and the 2k-1 stage shift register unit G( 2k-1) is connected to receive the 2k-1th pre-output signal POUT(2k-1) among the N pre-output signals, for example, the 2k+1th stage shift register unit G(2k+1) and the 2k-th The first output terminal PT of the first stage shift register unit G (2k-1) is connected, so that the 2k-1th pre-output signal POUT (2k-1) is input as the output signal IN to the 2k+1 stage shift register unit G(2k+1).
第2k+2级移位寄存器单元G(2k+2)和第2k级移位寄存器单元G(2k)连接以接收N个预输出信号中的第2k个预输出信号POUT(2k)。例如,第2k+2级移位寄存器单元G(2k+2)和第2k级移位寄存器单元G(2k)的第一输出端PT连接,从而使得第2k个预输出信号POUT(2k)作为输出信号IN输入第2k+2级移位寄存器单元G(2k+2)。k为满足1≤k≤(N/2)的整数。The shift register unit G (2k+2) of the 2k+2 stage and the shift register unit G (2k) of the 2k stage are connected to receive the 2k pre-output signal POUT (2k) among the N pre-output signals. For example, the first output terminal PT of the 2k+2 stage shift register unit G(2k+2) and the 2k stage shift register unit G(2k) are connected, so that the 2kth pre-output signal POUT(2k) is The output signal IN is input to the shift register unit G (2k+2) of the 2k+2 stage. k is an integer satisfying 1≤k≤(N/2).
也就是说,图3中的移位寄存器中的N个移位寄存器单元按照奇数级和偶数级分别进行级联。That is to say, the N shift register units in the shift register in FIG. 3 are cascaded according to odd-numbered stages and even-numbered stages, respectively.
本公开的至少一实施例提供的信号产生方法还包括如下操作步骤。The signal generation method provided by at least one embodiment of the present disclosure further includes the following operation steps.
步骤S400:向移位寄存器中的奇数级移位寄存器单元提供第一时钟信号CK1以及第二时钟信号CK2;Step S400: Provide the first clock signal CK1 and the second clock signal CK2 to the odd-numbered shift register units in the shift register;
步骤S500:向移位寄存器中的偶数级移位寄存器单元提供第三时钟信号CK3以及第四周期信号CK4。Step S500: Provide the third clock signal CK3 and the fourth periodic signal CK4 to the even-numbered shift register units in the shift register.
例如,提供至奇数级移位寄存器单元的第一时钟信号CK1可以作为第一控制信号CR1,提供至奇数级移位寄存器单元的第二时钟信号CK2可以作为第二控制信号CR2。提供至偶数级移位寄存器单元的第三时钟信号CK3可以作为第一控制信号CR1,提供至偶数级移位寄存器单元的第四时钟信号CK4可以作为第二控制信号CR2。For example, the first clock signal CK1 provided to the odd-numbered shift register unit may be used as the first control signal CR1, and the second clock signal CK2 provided to the odd-numbered shift register unit may be used as the second control signal CR2. The third clock signal CK3 provided to the even-numbered shift register unit can be used as the first control signal CR1, and the fourth clock signal CK4 provided to the even-numbered shift register unit can be used as the second control signal CR2.
如图6所示,第一时钟信号CK1与第二时钟信号CK2相差两个系统时钟周期H,第一时钟信号CK1与第三时钟信号CK3相差一个系统时钟周期H,第三时钟信号CK3与第四时钟信号CK4相差两个系统时钟周期2H,且第二时钟信号CK2与第四时钟信号CK4相差一个系统时钟周期H。第一时钟信号CK1、第二时钟信号CK2、第三时钟信号CK3以及第四时钟信号CK4 的占空比均为50%。As shown in FIG. 6, the first clock signal CK1 and the second clock signal CK2 are two system clock cycles H apart, the first clock signal CK1 and the third clock signal CK3 are one system clock cycle H apart, and the third clock signal CK3 is different from the first clock signal CK3. The four clock signal CK4 differs by two system clock periods 2H, and the second clock signal CK2 and the fourth clock signal CK4 differ by one system clock period H. The duty ratios of the first clock signal CK1, the second clock signal CK2, the third clock signal CK3, and the fourth clock signal CK4 are all 50%.
当N个如图4所示的移位寄存器单元级联构成的移位寄存器采用图6所示的时钟信号时,第n级移位寄存器单元G(n-1)输出的预输出信号POUT(n-1)经过反相后的预输出反相信号NOUT(n-1)以及第n+1级移位寄存器单元G(n)输出的预输出信号POUT(n)的时序关系如图7所示,例如,当多个如图1中所示的像素电路呈阵列排布时,例如,该阵列包括N-1行像素电路,则图7所示的预输出反相信号NOUT(n-1)以及预输出信号POUT(n)可以被用于驱动第n行像素电路。n为满足1≤n≤N-1的整数,N为大于等于2的整数。如图7所示,用于向像素电路中的存储电容CST进行充电的充电时间CT为一个系统时钟周期H。When the shift register formed by the cascade connection of N shift register units as shown in Fig. 4 adopts the clock signal shown in Fig. 6, the pre-output signal POUT( n-1) The timing relationship between the inverted pre-output inverted signal NOUT(n-1) and the pre-output signal POUT(n) output by the n+1th stage shift register unit G(n) is shown in Figure 7. For example, when a plurality of pixel circuits as shown in FIG. 1 are arranged in an array, for example, the array includes N-1 rows of pixel circuits, the pre-output inverted signal NOUT(n-1 ) And the pre-output signal POUT(n) can be used to drive pixel circuits in the nth row. n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2. As shown in FIG. 7, the charging time CT for charging the storage capacitor CST in the pixel circuit is one system clock period H.
在本公开的其它一些实施例中,图4中所示的电路还可以采用图8所示的信号时序。如图8所示,在第一阶段W1中,输入信号IN和第一控制信号CR1为低电平,第二控制信号CR2为高电平,第一输出端PT输出高电平的预输出信号POUT(n),第二输出端NT输出低电平的预输出反相信号NOUT(n),关于第一阶段W1的工作原理可以参考上述第一阶段Q1的工作原理,这里不再赘述。In some other embodiments of the present disclosure, the circuit shown in FIG. 4 may also adopt the signal timing shown in FIG. 8. As shown in Figure 8, in the first stage W1, the input signal IN and the first control signal CR1 are at low level, the second control signal CR2 is at high level, and the first output terminal PT outputs a high level pre-output signal. POUT(n), the second output terminal NT outputs a low-level pre-output inverted signal NOUT(n). For the working principle of the first stage W1, please refer to the working principle of the first stage Q1 mentioned above, which will not be repeated here.
在第二阶段W2中,上述第二阶段Q2类似,第一输出端PT输出低电平的预输出信号POUT(n),第二输出端NT输出高电平的预输出反相信号NOUT(n)。In the second stage W2, the second stage Q2 is similar, the first output terminal PT outputs a low-level pre-output signal POUT(n), and the second output terminal NT outputs a high-level pre-output inverted signal NOUT(n ).
在第三阶段W3中,第二控制信号CR2由低电平变为高电平,第一输出端PT输出的预输出信号POUT(n)也由低电平变为高电平,第九晶体管M9和第十一晶体管M11被截止。此时由于第一控制信号CR1仍为高电平,所以第十晶体管M10也被截止。由于第三电容C3的作用,第五节点N5仍然为上一阶段的高电平,所以第十二晶体管M12也截止,第二输出端NT输出的预输出反相信号NOUT(n)不会被下拉仍然为高电平。In the third stage W3, the second control signal CR2 changes from low level to high level, the pre-output signal POUT(n) output by the first output terminal PT also changes from low level to high level, and the ninth transistor M9 and the eleventh transistor M11 are turned off. At this time, since the first control signal CR1 is still at a high level, the tenth transistor M10 is also turned off. Due to the effect of the third capacitor C3, the fifth node N5 is still at the high level of the previous stage, so the twelfth transistor M12 is also turned off, and the pre-output inverted signal NOUT(n) output by the second output terminal NT will not be The pull-down is still high.
关于第四阶段W4的工作原理可以参考上述第三阶段Q3的工作原理,关于第五阶段W5的工作原理可以参考上述第四阶段Q4的工作原理,这里不再赘述。For the working principle of the fourth stage W4, you can refer to the working principle of the third stage Q3, and the working principle of the fifth stage W5 can refer to the working principle of the fourth stage Q4, which will not be repeated here.
例如,提供至奇数级移位寄存器单元的第一时钟信号CK1可以作为第一控制信号CR1,提供至奇数级移位寄存器单元的第二时钟信号CK2可以作为第二控制信号CR2。提供至偶数级移位寄存器单元的第三时钟信号CK3 可以作为第一控制信号CR1,提供至偶数级移位寄存器单元的第四时钟信号CK4可以作为第二控制信号CR2。For example, the first clock signal CK1 provided to the odd-numbered shift register unit may be used as the first control signal CR1, and the second clock signal CK2 provided to the odd-numbered shift register unit may be used as the second control signal CR2. The third clock signal CK3 provided to the even-numbered shift register unit can be used as the first control signal CR1, and the fourth clock signal CK4 provided to the even-numbered shift register unit can be used as the second control signal CR2.
如图9所示,第一时钟信号CK1与第三时钟信号CK3相差一个系统时钟周期H,第二时钟信号CK2与第四时钟信号CK4相差一个系统时钟周期H,且第一时钟信号CK1、第二时钟信号CK2、第三时钟信号CK3以及第四时钟信号CK4的占空比均大于50%。As shown in Figure 9, the first clock signal CK1 and the third clock signal CK3 differ by one system clock period H, the second clock signal CK2 and the fourth clock signal CK4 differ by one system clock period H, and the first clock signal CK1 and the The duty ratios of the second clock signal CK2, the third clock signal CK3, and the fourth clock signal CK4 are all greater than 50%.
当N个如图4所示的移位寄存器单元级联构成的移位寄存器采用图9所示的时钟信号时,第n级移位寄存器单元G(n-1)输出的预输出信号POUT(n-1)经过反相后的预输出反相信号NOUT(n-1)以及第n+1级移位寄存器单元G(n)输出的预输出信号POUT(n)的时序关系如图10所示,例如,当多个如图1中所示的像素电路呈阵列排布时,例如,该阵列包括N-1行像素电路,则图9所示的预输出反相信号NOUT(n)以及预输出信号POUT(n+1)可以被用于驱动第n行像素电路。n为满足1≤n≤N-1的整数,N为大于等于2的整数。如图10所示,用于向像素电路中的存储电容CST进行充电的充电时间CT大于一个系统时钟周期H。When the shift register formed by the cascade of N shift register units as shown in FIG. 4 adopts the clock signal shown in FIG. 9, the pre-output signal POUT( n-1) The timing relationship between the inverted pre-output inverted signal NOUT(n-1) and the pre-output signal POUT(n) output by the n+1th stage shift register unit G(n) is shown in Figure 10. For example, when a plurality of pixel circuits as shown in FIG. 1 are arranged in an array, for example, the array includes N-1 rows of pixel circuits, the pre-output inverted signal NOUT(n) and The pre-output signal POUT(n+1) can be used to drive the pixel circuit of the nth row. n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2. As shown in FIG. 10, the charging time CT for charging the storage capacitor CST in the pixel circuit is greater than one system clock period H.
在本公开的上述实施例提供的信号产生方法中,当采用的时钟信号的占空比大于50%时,可以提高向像素电路中的存储电容CST进行充电的充电时间CT。In the signal generation method provided by the above-mentioned embodiments of the present disclosure, when the duty ratio of the adopted clock signal is greater than 50%, the charging time CT for charging the storage capacitor CST in the pixel circuit can be increased.
更进一步地,为了进一步提高像素电路中的存储电容CST进行充电的充电时间CT,图4中的第十晶体管M10的栅极还可以被配置为接收不同于第一控制信号CR1的其它控制信号,使得第十晶体管M10被导通的时间更晚,从而使得图4所示的移位寄存器单元的第二输出端NT输出的预输出反相信号的脉冲宽度更宽,从而可以提高充电时间CT。Furthermore, in order to further increase the charging time CT for charging the storage capacitor CST in the pixel circuit, the gate of the tenth transistor M10 in FIG. 4 may also be configured to receive other control signals different from the first control signal CR1. The tenth transistor M10 is turned on later, so that the pulse width of the pre-output inverted signal output by the second output terminal NT of the shift register unit shown in FIG. 4 is wider, so that the charging time CT can be increased.
例如,在本公开的一些实施例提供的信号产生方法中,N个预输出反相信号中的第n个预输出反相信号和N个预输出信号中的第n+1个预输出信号被配置为控制显示面板的显示区域中的至少两个晶体管导通或截止。例如,第n个预输出反相信号NOUT(n-1)可以被用作第二扫描信号Gate2以驱动如图1所示的像素电路中的第三晶体管T3以及第四晶体管T4,第n+1个预输出信号POUT(n)可以被用作第一扫描信号Gate1以驱动如图1所示的像素电路中的第二晶体管T2。例如,第二晶体管T2为P型晶体管,而第三晶体管T3和第四晶体管T4为N型晶体管。For example, in the signal generation method provided by some embodiments of the present disclosure, the n-th pre-output inverted signal among the N pre-output inverted signals and the n+1-th pre-output signal among the N pre-output signals are At least two transistors in the display area of the display panel are configured to be turned on or off. For example, the nth pre-output inverted signal NOUT(n-1) can be used as the second scan signal Gate2 to drive the third transistor T3 and the fourth transistor T4 in the pixel circuit as shown in FIG. One pre-output signal POUT(n) can be used as the first scan signal Gate1 to drive the second transistor T2 in the pixel circuit shown in FIG. 1. For example, the second transistor T2 is a P-type transistor, and the third transistor T3 and the fourth transistor T4 are N-type transistors.
本公开的至少一实施例还提供一种信号发生电路100,如图11所示,该信号发生电路100包括移位寄存器110和反相电路120。At least one embodiment of the present disclosure also provides a signal generating circuit 100. As shown in FIG. 11, the signal generating circuit 100 includes a shift register 110 and an inverter circuit 120.
例如,该移位寄存器110包括N个级联的移位寄存器单元(例如图12中所示的G(0)、G(1)、G(2)、G(3)…G(N-1)),N个级联的移位寄存器单元被配置为分别输出N个预输出信号,例如为POUT(0)、POUT(1)…POUT(n)…POUT(N-1)。例如,该移位寄存器单元可以采用图4中所示的移位寄存器单元G(n)。For example, the shift register 110 includes N cascaded shift register units (such as G(0), G(1), G(2), G(3)...G(N-1) shown in FIG. )), N cascaded shift register units are configured to respectively output N pre-output signals, such as POUT(0), POUT(1)...POUT(n)...POUT(N-1). For example, the shift register unit may adopt the shift register unit G(n) shown in FIG. 4.
例如,该反相电路120被配置为对N个预输出信号分别进行反相以获得N个预输出反相信号,例如为NOUT(0)、NOUT(1)…NOUT(n)…NOUT(N-1)。For example, the inverter circuit 120 is configured to invert the N pre-output signals to obtain N pre-output inverted signals, such as NOUT(0), NOUT(1)...NOUT(n)...NOUT(N -1).
将N个预输出反相信号中的第n个预输出反相信号NOUT(n-1)和N个预输出信号中的第n+1个预输出信号POUT(n)组合以产生第n个输出信号,由此得到信号发生电路100的N-1个输出信号。n为满足1≤n≤N-1的整数,N为大于等于2的整数。Combine the nth pre-output inverted signal NOUT(n-1) among the N pre-output inverted signals and the n+1th pre-output signal POUT(n) among the N pre-output signals to generate the nth Output signals, thereby obtaining N-1 output signals of the signal generating circuit 100. n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
本公开的至少一实施例提供的信号发生电路100产生的输出信号可以用于驱动6T1C像素电路,例如,可以用于驱动如图1所示的6T1C像素电路。The output signal generated by the signal generating circuit 100 provided by at least one embodiment of the present disclosure can be used to drive a 6T1C pixel circuit, for example, can be used to drive a 6T1C pixel circuit as shown in FIG. 1.
例如,在本公开的一些实施例提供的信号发生电路100中,如图12所示,反相电路120包括N个反相子电路,例如为IP(0)、IP(1)、IP(2)、IP(3)…IP(N-1),第m个反相子电路IP(m)和第m级移位寄存器单元G(m)连接,且被配置为对N个预输出信号中的第m个预输出信号POUT(m)进行反相以获得N个预输出反相信号中的第m个预输出反相信号NOUT(m),m为满足0≤m≤N的整数。例如,该反相子电路可以采用图4中所示的反相子电路IP(n)。For example, in the signal generating circuit 100 provided by some embodiments of the present disclosure, as shown in FIG. 12, the inverter circuit 120 includes N inverter sub-circuits, such as IP(0), IP(1), IP(2). ), IP(3)...IP(N-1), the m-th inverting sub-circuit IP(m) is connected to the m-th stage shift register unit G(m), and is configured to respond to the N pre-output signals The m-th pre-output signal POUT(m) is inverted to obtain the m-th pre-output inverted signal NOUT(m) among the N pre-output inverted signals, where m is an integer satisfying 0≤m≤N. For example, the inverting sub-circuit may adopt the inverting sub-circuit IP(n) shown in FIG. 4.
例如,如图12所示,移位寄存器中的第2k+1级移位寄存器单元G(2k+1)和第2k-1级移位寄存器单元G(2k-1)连接以接收N个预输出信号中的第2k-1个预输出信号POUT(2k-1),例如,第2k+1级移位寄存器单元G(2k+1)和第2k-1级移位寄存器单元G(2k-1)的第一输出端PT连接,从而使得第2k-1个预输出信号POUT(2k-1)作为输出信号IN输入第2k+1级移位寄存器单元G(2k+1)。For example, as shown in FIG. 12, the 2k+1 stage shift register unit G (2k+1) and the 2k-1 stage shift register unit G (2k-1) in the shift register are connected to receive N presets. The 2k-1th pre-output signal POUT(2k-1) in the output signal, for example, the 2k+1th stage shift register unit G(2k+1) and the 2k-1th stage shift register unit G(2k- The first output terminal PT of 1) is connected, so that the 2k-1th pre-output signal POUT(2k-1) is input to the 2k+1th stage shift register unit G(2k+1) as the output signal IN.
第2k+2级移位寄存器单元G(2k+2)和第2k级移位寄存器单元G(2k)连接以接收N个预输出信号中的第2k个预输出信号POUT(2k)。例如,第2k+2级移位寄存器单元G(2k+2)和第2k级移位寄存器单元G(2k)的第一输出端PT 连接,从而使得第2k个预输出信号POUT(2k)作为输出信号IN输入第2k+2级移位寄存器单元G(2k+2)。k为满足1≤k≤(N/2)的整数。The shift register unit G (2k+2) of the 2k+2 stage and the shift register unit G (2k) of the 2k stage are connected to receive the 2k pre-output signal POUT (2k) among the N pre-output signals. For example, the first output terminal PT of the 2k+2 stage shift register unit G(2k+2) and the 2k stage shift register unit G(2k) are connected, so that the 2kth pre-output signal POUT(2k) is used as The output signal IN is input to the shift register unit G (2k+2) of the 2k+2 stage. k is an integer satisfying 1≤k≤(N/2).
例如,如图12所示,移位寄存器单元G(0)可以接收第一帧信号STV0以作为输入信号IN,移位寄存器单元G(1)可以接收第二帧信号STV1以作为输入信号IN。For example, as shown in FIG. 12, the shift register unit G(0) may receive the first frame signal STV0 as the input signal IN, and the shift register unit G(1) may receive the second frame signal STV1 as the input signal IN.
也就是说,图12中的移位寄存器中的N个移位寄存器单元按照奇数级和偶数级分别进行级联。That is to say, the N shift register units in the shift register in FIG. 12 are cascaded according to odd-numbered stages and even-numbered stages, respectively.
例如,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期H。For example, the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle H.
需要说明的是,关于图12中的移位寄存器单元以及反相子电路的工作原理可以参考上述关于图4所示的电路的工作原理,这里不再赘述。It should be noted that for the working principle of the shift register unit and the inverting sub-circuit in FIG. 12, reference may be made to the working principle of the circuit shown in FIG. 4, which will not be repeated here.
本公开的一些实施例提供的信号发生电路100还包括第一时钟信号线、第二时钟信号线、第三时钟信号线以及第四时钟信号线。第一时钟信号线与移位寄存器中的奇数级移位寄存器单元连接以提供第一时钟信号CK1,第二时钟信号线与移位寄存器中的奇数级移位寄存器单元连接以提供第二时钟信号CK2;第三时钟信号线与移位寄存器中的偶数级移位寄存器单元连接以提供第三时钟信号CK3,第四时钟信号线与移位寄存器中的偶数级移位寄存器单元连接以提供第四时钟信号CK4。The signal generation circuit 100 provided by some embodiments of the present disclosure further includes a first clock signal line, a second clock signal line, a third clock signal line, and a fourth clock signal line. The first clock signal line is connected to the odd-numbered shift register unit in the shift register to provide a first clock signal CK1, and the second clock signal line is connected to the odd-numbered shift register unit in the shift register to provide a second clock signal CK2; the third clock signal line is connected to the even-numbered shift register unit in the shift register to provide the third clock signal CK3, and the fourth clock signal line is connected to the even-numbered shift register unit in the shift register to provide the fourth Clock signal CK4.
例如,第一时钟信号CK1与第三时钟信号CK3相差一个系统时钟周期H,且第二时钟信号CK2与第四时钟信号CK4相差一个系统时钟周期H。For example, the first clock signal CK1 and the third clock signal CK3 differ by one system clock period H, and the second clock signal CK2 and the fourth clock signal CK4 differ by one system clock period H.
例如,在一些实施例中,第一时钟信号CK1、第二时钟信号CK2、第三时钟信号CK3以及第四时钟信号CK4的占空比均为50%。For example, in some embodiments, the duty ratios of the first clock signal CK1, the second clock signal CK2, the third clock signal CK3, and the fourth clock signal CK4 are all 50%.
例如,在一些实施例中,第一时钟信号CK1、第二时钟信号CK2、第三时钟信号CK3以及第四时钟信号CK4的占空比均大于50%。For example, in some embodiments, the duty ratios of the first clock signal CK1, the second clock signal CK2, the third clock signal CK3, and the fourth clock signal CK4 are all greater than 50%.
关于第一时钟信号CK1、第二时钟信号CK2、第三时钟信号CK3以及第四时钟信号CK4的详细描述可以参考上述关于信号产生方法的实施例中的相应描述,这里不再赘述。For the detailed description of the first clock signal CK1, the second clock signal CK2, the third clock signal CK3, and the fourth clock signal CK4, reference may be made to the corresponding description in the foregoing embodiment of the signal generation method, which will not be repeated here.
本公开的至少一实施例还提供一种显示装置10,如图13所示,该显示装置10包括信号发生电路100,例如该信号发生电路100可以采用上述实施例中提供的信号发生电路。At least one embodiment of the present disclosure further provides a display device 10. As shown in FIG. 13, the display device 10 includes a signal generating circuit 100. For example, the signal generating circuit 100 may use the signal generating circuit provided in the above-mentioned embodiments.
例如,在一些实施例中,如图13所示,该显示装置10还包括显示面板 200。显示面板200包括呈阵列排布的多个像素电路300,多个像素电路300和信号发生电路100连接。例如,在显示面板200中可以设置多个呈阵列排布的像素单元PI,在每个像素单元PI中均设置有像素电路300。例如,该显示面板200包括N-1行像素电路300,则第n行像素电路被配置为接收信号发生电路100的N-1个输出信号中的第n个输出信号。For example, in some embodiments, as shown in FIG. 13, the display device 10 further includes a display panel 200. The display panel 200 includes a plurality of pixel circuits 300 arranged in an array, and the plurality of pixel circuits 300 are connected to the signal generating circuit 100. For example, a plurality of pixel units PI arranged in an array may be provided in the display panel 200, and a pixel circuit 300 is provided in each pixel unit PI. For example, the display panel 200 includes N-1 rows of pixel circuits 300, and the nth row of pixel circuits is configured to receive the nth output signal among the N-1 output signals of the signal generating circuit 100.
例如,在本公开的一些实施例中,图13中所示的像素电路300可以采用图14所示的像素电路,如图14所示,该像素电路300包括数据写入子电路320、驱动子电路310、补偿子电路330、复位子电路340、发光控制子电路以及发光元件360。例如,发光控制电路包括第一发光控制子电路351和第二发光控制子电路352。例如,图14所示的像素电路可以实现为图1中所示的电路结构,但本公开的实施例包括但不限于此,图14所示的像素电路也可以实现为其它电路结构。For example, in some embodiments of the present disclosure, the pixel circuit 300 shown in FIG. 13 may adopt the pixel circuit shown in FIG. 14. As shown in FIG. 14, the pixel circuit 300 includes a data writing sub-circuit 320 and a driver The circuit 310, the compensation sub-circuit 330, the reset sub-circuit 340, the light-emission control sub-circuit, and the light-emitting element 360. For example, the light emission control circuit includes a first light emission control sub-circuit 351 and a second light emission control sub-circuit 352. For example, the pixel circuit shown in FIG. 14 may be implemented as the circuit structure shown in FIG. 1, but the embodiments of the present disclosure include but are not limited to this, and the pixel circuit shown in FIG. 14 may also be implemented as other circuit structures.
例如,如图14所示,第n行像素电路中的补偿子电路330、复位子电路340以及数据写入子电路320被配置为接收信号发生电路100的第n个输出信号。例如,补偿子电路330和复位子电路340被配置为接收第n个输出信号中的预输出反相信号NOUT(n),数据写入子电路被配置为接收第n个输出信号中的预输出信号POUT(n+1)。For example, as shown in FIG. 14, the compensation sub-circuit 330, the reset sub-circuit 340, and the data writing sub-circuit 320 in the pixel circuit of the n-th row are configured to receive the n-th output signal of the signal generating circuit 100. For example, the compensation sub-circuit 330 and the reset sub-circuit 340 are configured to receive the pre-output inverted signal NOUT(n) in the nth output signal, and the data writing sub-circuit is configured to receive the pre-output in the nth output signal. The signal POUT(n+1).
需要说明的是,本公开至少一实施例提供的显示装置10可以为:液晶面板、液晶电视、显示器、OLED面板、OLED电视、电子纸、手机、平板电脑、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。It should be noted that the display device 10 provided by at least one embodiment of the present disclosure may be: LCD panel, LCD TV, display, OLED panel, OLED TV, electronic paper, mobile phone, tablet computer, notebook computer, digital photo frame, navigator, etc. Any product or component with display function.
本公开的实施例提供的显示装置10的技术效果,可以参考上述实施例中关于信号产生方法和信号发生电路100的相应描述,这里不再赘述。For the technical effects of the display device 10 provided by the embodiments of the present disclosure, reference may be made to the corresponding description of the signal generation method and the signal generation circuit 100 in the above-mentioned embodiments, which will not be repeated here.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims (20)

  1. 一种信号产生方法,用于移位寄存器,其中,所述移位寄存器包括N个级联的移位寄存器单元,所述信号产生方法包括:A signal generation method for a shift register, wherein the shift register includes N cascaded shift register units, and the signal generation method includes:
    使得N个级联的移位寄存器单元分别输出N个预输出信号;Make N cascaded shift register units output N pre-output signals respectively;
    对所述N个预输出信号分别进行反相以获得N个预输出反相信号;以及Inverting the N pre-output signals respectively to obtain N pre-output inverted signals; and
    将所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到N-1个输出信号;Combine the n-th pre-output inverted signal among the N pre-output inverted signals and the n+1-th pre-output signal among the N pre-output signals to generate the n-th output signal, thereby obtaining N-1 output signals;
    其中,n为满足1≤n≤N-1的整数,N为大于等于2的整数。Wherein, n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
  2. 根据权利要求1所述的信号产生方法,其中,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期。4. The signal generating method according to claim 1, wherein the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle.
  3. 根据权利要求1或2所述的信号产生方法,其中,所述N个预输出反相信号中的第n个预输出反相信号与第n+1个预输出反相信号之间相差一个系统时钟周期。The signal generating method according to claim 1 or 2, wherein the difference between the nth pre-output inverted signal and the n+1th pre-output inverted signal in the N pre-output inverted signals is one system Clock cycle.
  4. 根据权利要求1-3任一项所述的信号产生方法,其中,所述移位寄存器中的第2k+1级移位寄存器单元和第2k-1级移位寄存器单元连接以接收所述N个预输出信号中的第2k-1个预输出信号,所述移位寄存器中的第2k+2级移位寄存器单元和第2k级移位寄存器单元连接以接收所述N个预输出信号中的第2k个预输出信号;The signal generation method according to any one of claims 1 to 3, wherein the 2k+1 stage shift register unit and the 2k-1 stage shift register unit in the shift register are connected to receive the N The 2k-1th pre-output signal in the N pre-output signals, the 2k+2-stage shift register unit and the 2k-stage shift register unit in the shift register are connected to receive the N pre-output signals. The 2kth pre-output signal of;
    其中,k为满足1≤k≤(N/2)的整数。Among them, k is an integer satisfying 1≤k≤(N/2).
  5. 根据权利要求1-4任一项所述的信号产生方法,还包括:The signal generation method according to any one of claims 1 to 4, further comprising:
    向所述移位寄存器中的奇数级移位寄存器单元提供第一时钟信号以及第二时钟信号;以及Providing a first clock signal and a second clock signal to the odd-numbered stage shift register units in the shift register; and
    向所述移位寄存器中的偶数级移位寄存器单元提供第三时钟信号以及第四周期信号。The third clock signal and the fourth period signal are provided to the even-numbered shift register units in the shift register.
  6. 根据权利要求5所述的信号产生方法,其中,所述第一时钟信号与所述第三时钟信号相差一个系统时钟周期,且所述第二时钟信号与所述第四时钟信号相差一个系统时钟周期。5. The signal generating method according to claim 5, wherein the first clock signal and the third clock signal differ by one system clock period, and the second clock signal and the fourth clock signal differ by one system clock cycle.
  7. 根据权利要求5或6所述的信号产生方法,其中,所述第一时钟信 号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号中至少一个的占空比大于50%。The signal generation method according to claim 5 or 6, wherein a duty cycle of at least one of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal is greater than 50%.
  8. 根据权利要求7所述的信号产生方法,其中,所述第一时钟信号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号的占空比均大于50%。8. The signal generating method according to claim 7, wherein the duty ratios of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal are all greater than 50%.
  9. 根据权利要求1-8任一项所述的信号产生方法,其中,所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号被配置为控制显示面板的显示区域中的至少两个晶体管导通或截止。8. The signal generating method according to any one of claims 1-8, wherein the nth pre-output inverted signal in the N pre-output inverted signals and the n+th in the N pre-output signals One pre-output signal is configured to control at least two transistors in the display area of the display panel to be turned on or off.
  10. 根据权利要求9所述的信号产生方法,其中,所述至少两个晶体管包括两种类型不同的晶体管。The signal generating method according to claim 9, wherein the at least two transistors include two different types of transistors.
  11. 一种信号发生电路,包括移位寄存器和反相电路,其中,A signal generating circuit includes a shift register and an inverter circuit, wherein,
    所述移位寄存器包括N个级联的移位寄存器单元,The shift register includes N cascaded shift register units,
    所述N个级联的移位寄存器单元被配置为分别输出N个预输出信号;The N cascaded shift register units are configured to output N pre-output signals respectively;
    所述反相电路被配置为对所述N个预输出信号分别进行反相以获得N个预输出反相信号;The inverting circuit is configured to invert the N pre-output signals to obtain N pre-output inverted signals;
    将所述N个预输出反相信号中的第n个预输出反相信号和所述N个预输出信号中的第n+1个预输出信号组合以产生第n个输出信号,由此得到所述信号发生电路的N-1个输出信号;Combine the n-th pre-output inverted signal among the N pre-output inverted signals and the n+1-th pre-output signal among the N pre-output signals to generate the n-th output signal, thereby obtaining N-1 output signals of the signal generating circuit;
    其中,n为满足1≤n≤N-1的整数,N为大于等于2的整数。Wherein, n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
  12. 根据权利要求11所述的信号发生电路,其中,所述反相电路包括N个反相子电路,第m个反相子电路和所述第m级移位寄存器单元连接,且被配置为对所述N个预输出信号中的第m个预输出信号进行反相以获得所述N个预输出反相信号中的第m个预输出反相信号,The signal generating circuit according to claim 11, wherein the inverting circuit includes N inverting sub-circuits, and the m-th inverting sub-circuit is connected to the m-th stage shift register unit and is configured to pair Inverting the m-th pre-output signal among the N pre-output signals to obtain the m-th pre-output inverted signal among the N pre-output inverted signals,
    其中,m为满足0≤m≤N的整数。Among them, m is an integer satisfying 0≤m≤N.
  13. 根据权利要求11或12所述的信号发生电路,其中,所述移位寄存器中的第2k+1级移位寄存器单元和第2k-1级移位寄存器单元连接以接收所述N个预输出信号中的第2k-1个预输出信号,所述移位寄存器中的第2k+2级移位寄存器单元和第2k级移位寄存器单元连接以接收所述N个预输出信号中的第2k个预输出信号;The signal generating circuit according to claim 11 or 12, wherein the 2k+1 stage shift register unit and the 2k-1 stage shift register unit in the shift register are connected to receive the N pre-outputs The 2k-1th pre-output signal in the signal, the 2k+2th stage shift register unit and the 2kth stage shift register unit in the shift register are connected to receive the 2kth stage of the N pre-output signals Pre-output signals;
    其中,k为满足1≤k≤(N/2)的整数。Among them, k is an integer satisfying 1≤k≤(N/2).
  14. 根据权利要求11-13任一项所述的信号发生电路,其中,相邻级移位寄存器单元输出的预输出信号之间相差一个系统时钟周期。The signal generating circuit according to any one of claims 11-13, wherein the pre-output signals output by the shift register units of adjacent stages differ by one system clock cycle.
  15. 根据权利要求11-14任一项所述的信号发生电路,还包括第一时钟信号线、第二时钟信号线、第三时钟信号线以及第四时钟信号线,The signal generation circuit according to any one of claims 11-14, further comprising a first clock signal line, a second clock signal line, a third clock signal line, and a fourth clock signal line,
    所述第一时钟信号线与所述移位寄存器中的奇数级移位寄存器单元连接以提供第一时钟信号,所述第二时钟信号线与所述移位寄存器中的所述奇数级移位寄存器单元连接以提供第二时钟信号;The first clock signal line is connected to the odd-stage shift register unit in the shift register to provide a first clock signal, and the second clock signal line is connected to the odd-stage shift register in the shift register. The register unit is connected to provide a second clock signal;
    所述第三时钟信号线与所述移位寄存器中的偶数级移位寄存器单元连接以提供第三时钟信号,所述第四时钟信号线与所述移位寄存器中的所述偶数级移位寄存器单元连接以提供第四时钟信号。The third clock signal line is connected to the even-numbered stage shift register unit in the shift register to provide a third clock signal, and the fourth clock signal line is shifted with the even-numbered stage in the shift register The register unit is connected to provide the fourth clock signal.
  16. 根据权利要求15所述的信号发生电路,其中,所述第一时钟信号与所述第三时钟信号相差一个所述系统时钟周期,且所述第二时钟信号与所述第四时钟信号相差一个系统时钟周期。15. The signal generating circuit according to claim 15, wherein the first clock signal and the third clock signal differ by one system clock period, and the second clock signal and the fourth clock signal differ by one System clock cycle.
  17. 根据权利要求15或16所述的信号发生电路,其中,所述第一时钟信号、所述第二时钟信号、所述第三时钟信号以及所述第四时钟信号中至少一个的占空比大于50%。The signal generating circuit according to claim 15 or 16, wherein a duty cycle of at least one of the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal is greater than 50%.
  18. 一种显示装置,包括如权利要求11-17任一项所述的信号发生电路。A display device comprising the signal generating circuit according to any one of claims 11-17.
  19. 根据权利要求18所述的显示装置,还包括显示面板,其中,The display device according to claim 18, further comprising a display panel, wherein:
    所述显示面板包括N-1行呈阵列排布的多个像素电路,所述多个像素电路和所述信号发生电路连接,The display panel includes a plurality of pixel circuits arranged in an array in N-1 rows, and the plurality of pixel circuits are connected to the signal generating circuit,
    第n行像素电路被配置为接收所述信号发生电路的所述N-1个输出信号中的第n个输出信号,The pixel circuit of the nth row is configured to receive the nth output signal among the N-1 output signals of the signal generating circuit,
    其中,n为满足1≤n≤N-1的整数,N为大于等于2的整数。Wherein, n is an integer satisfying 1≤n≤N-1, and N is an integer greater than or equal to 2.
  20. 根据权利要求19所述的显示装置,其中,所述像素电路包括数据写入子电路、驱动子电路、补偿子电路、复位子电路、发光控制子电路以及发光元件,The display device according to claim 19, wherein the pixel circuit includes a data writing sub-circuit, a driving sub-circuit, a compensation sub-circuit, a reset sub-circuit, a light-emission control sub-circuit, and a light-emitting element,
    所述第n行像素电路中的补偿子电路、复位子电路以及数据写入子电路被配置为接收所述信号发生电路的所述第n个输出信号。The compensation sub-circuit, the reset sub-circuit, and the data writing sub-circuit in the n-th row of pixel circuits are configured to receive the n-th output signal of the signal generating circuit.
PCT/CN2019/087227 2019-05-16 2019-05-16 Signal generation method, signal generation circuit, and display apparatus WO2020228017A1 (en)

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