WO2020160343A1 - Electrically conductive vias and methods for producing same - Google Patents

Electrically conductive vias and methods for producing same Download PDF

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Publication number
WO2020160343A1
WO2020160343A1 PCT/US2020/015997 US2020015997W WO2020160343A1 WO 2020160343 A1 WO2020160343 A1 WO 2020160343A1 US 2020015997 W US2020015997 W US 2020015997W WO 2020160343 A1 WO2020160343 A1 WO 2020160343A1
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WO
WIPO (PCT)
Prior art keywords
particles
recited
hole
bimodal
electrically conductive
Prior art date
Application number
PCT/US2020/015997
Other languages
French (fr)
Inventor
Alan Nolet
Daniel GOIA
Vishwas Hardikar
Ajeet Kumar
Daniel Long
Andrew Haynes LIOTTA
Troy Benton HOLLAND
Thomas Jacob HAMMANN
Heidi BATES
Original Assignee
Samtec, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2019/024891 external-priority patent/WO2019191621A1/en
Application filed by Samtec, Inc. filed Critical Samtec, Inc.
Publication of WO2020160343A1 publication Critical patent/WO2020160343A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables

Abstract

Methods for fabricating electrically conductive vias are disclosed. In particular, a solution of electrically conductive particles are driven into a hole that extends through a glass substrate. The solution is evacuated, and the packing density of the particles in the hole can be increased. One or more subsequent steps of driving the particles into the hole can be performed. The particles can be driven into a first end of the hole during a first step of driving the particles into the hole, and can be driven into a second end of the hole during a second step of driving the particles into the hole. The particles can subsequently be substantially non-densification sintered.

Description

ELECTRICALLY CONDUCTIVE VIAS AND METHODS FOR PRODUCING SAME CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This claims priority to U.S. Patent Application Serial No.62/799,690 filed on January 31, 2019, U.S. Patent Application Serial No.62/799,712 filed on January 31, 2019, U.S. Patent Application Serial No.62/799,641 filed on January 31, 2019, and U.S. Patent Application Serial No. filed on 62/799,679 filed on January 31, 2019, the disclosure of each of which is hereby incorporated by reference as if set forth in its entirety herein.
[0002] This also claims priority to PCT application Serial No. PCT/US2019/024891 filed March 29, 2019, the disclosure of which is hereby incorporated by reference as if set forth in its entirety herein. BACKGROUND
[0003] 2.5-D and 3-D packaging is a novel implementation of an already well- established concept that previously was referred to as MCMs (multichip modules). A thin glass, silicon or other dielectric substrate material is created having a plurality of holes or vias that are metalized in such a manner as to create an electrical path. The integrated circuit packaging industry refers to these interconnection substrates as interposers. Holes fabricated into the interposer are typically very small, for example, 5.µm to 100.µm in diameter and 50.µm to 500 .µm in depth. The number of holes per square centimeter may be in the hundreds or even thousands. Following the processing necessary to fabricate these holes the next step is to metalize the hole to provide for an electrically conductive pathway from one circuit plane or substrate to another.
[0004] Current state of the art processes known as "copper electroplate" methods for metalizing interposer through and blind holes are very costly and lack manufacturing scalability. The metallization methods include a combination of physical vapor deposition (PVD) or sputtering deposition to form a seed layer followed by copper electroplating. The sputtering or PVD methods along with very sophisticated copper electroplating operations are very costly in materials and operational expense and require highly trained technicians to operate the process. The equipment necessary to run these processes is extremely expensive and difficult to scale to high-throughput manufacturing. The copper electroplating process takes 1 to 8 hours for each substrate, depending on hole diameter and aspect ratio. The electroplating process requires each substrate to be electroplated in an individual process cell having sophisticated analytical and dispensing controls and precision electrical field distribution across the substrate. [0005] Electroplated copper deposits extending beyond the surface of the substrate are referred to in the art as "over burden." To level the copper electroplate deposit flush or planar to the substrate surface requires a secondary process using chemical-mechanical polishing (CMP). Maintenance and operation of the CMP process requires highly skilled technicians for monitoring and control to achieve consistent results. Copper is a relatively soft metal and methods used to mechanically remove the excess copper are constrained by the loading of the soft copper into the abrasive material.
[0006] A second method of depositing copper or other conductive materials into via holes in interposer substrates utilizes metallic inks. The metallic inks typically are formulated using metal powder dispersed in a bonding resin or other polymer for ease of hole filling and a capping agent to prevent the metallic powder from oxidizing. After the holes are filled with the metallic ink along with the resin or capping agents it is necessary to volatize all organic materials and remove them from the metallic powder to achieve reasonable electrical conductivity.
Temperatures required for volatizing these organic compounds may reach 400 C to 800 C. The carbon ash left after volatizing the organic compounds may negatively impact optimal conductivity and leave significant potential for discontinuous filling of the hole. The potential for discontinuous or electrically open areas in the filled hole or via is unacceptable.
[0007] Most of these processes work only on a very limited hole length/width ratio, and narrow or extra wide holes are very difficult to manufacture in a consistent manner.
SUMMARY
[0008] In one aspect, a method is provided for producing an electrical component. The method can include the step of introducing at least one suspension into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate, wherein the at least one suspension includes first and second bimodal particles, wherein the first and second bimodal particles comprise different metals, and the second bimodal metals have a lower melting point than the first bimodal particles. The method can further include the step of evacuating the liquid medium from the hole such that the second bimodal particles are disposed in interstices defined by the first bimodal particles. The method can further include the step of sintering the first and second bimodal particles in the hole so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The foregoing summary, as well as the following detailed description of illustrative embodiments of the present application, will be better understood when read in conjunction with the appended drawings. For the purposes of illustrating the locking structures of the present application, there is shown in the drawings illustrative embodiments. It should be understood, however, that the application is not limited to the precise arrangements and instrumentalities shown. In the drawings:
[0010] Fig. 1 A is a perspective view of a substrate having a plurality of hole arrays that each define a respective plurality of holes;
[0011] Fig. IB is a schematic sectional side elevation view of a portion of the substrate illustrated in Fig.1 A, showing a through hole and a blind hole;
[0012] Fig. 2A is a schematic sectional side elevation view similar to Fig. 1, but showing the holes including an electrically conductive fill so as to define electrically conductive vias, and electrically conductive redistribution layers over the vias;
[0013] Fig. 2B is a SEM micrograph of one of the vias illustrated in Fig. 2A;
[0014] Fig. 3 is a flow chart illustrating the method steps of a method for electrically conductively filling the holes illustrated in Fig. IB to produce the electrically conductive vias illustrated in Fig. 2;
[0015] Fig. 4A is a perspective view of a suspension of electrically conductive particles in a liquid medium;
[0016] Fig. 4B is a perspective view of the suspension after agitation;
[0017] Fig. 4C is a perspective view of a second suspension;
[0018] Fig. 5 is a schematic sectional view of a vacuum fill apparatus configured to drive the suspension into the holes of the substrate;
[0019] Fig. 6A is a schematic side elevation view of a portion of the substrate illustrated in Fig. IB, shown after a first fill operation using the vacuum fill apparatus illustrated in Fig. 5, so as to produce a first electrically conductive fill in one of the holes;
[0020] Fig. 6B is a schematic side elevation view of the portion of the substrate illustrated in Fig. 6A, after a pressing operation has increased the packing density of the first electrically conductive fill;
[0021] Fig. 7A is a schematic view the particles of the suspension illustrated in Figs. 4A-4B, shown including substantially monosized electrically conductive particles; [0022] Fig. 7B is a schematic sectional view of the particles of the suspension illustrated in Figs. 4A-4B. show n including a bimodal distribution of small and large particles in accordance with an alternative embodiment;
[0023] Fig. 7C is a schematic sectional view of the particles of the suspension illustrated in Figs. 4A-4B, show n including a trimodal distribution of small particles, large particles, and midsize particles;
[0024] Fig. 8A is a schematic sectional view of the substrate shown disposed in an envelope that is configured to compress the particles after a filling operation and removal of the liquid medium;
[0025] Fig. 8B is a schematic sectional view of the substrate disposed in the envelope illustrated in Fig. 8 A, showing the envelope in surface contact with the substrate;
[0026] Fig. 8C is a schematic sectional view of the substrate disposed in the envelope as illustrated in Fig. 8B, but showing the envelope under pressure during a pressing operation to densely pack the particles in the holes of the substrate;
[0027] Fig. 9A is a schematic side elevation view of a portion of the substrate illustrated in Fig. 6A, shown after a subsequent fill operation using the vacuum fill apparatus illustrated in Fig. 5;
[0028] Fig. 9B is a schematic side elevation view of a portion of the substrate illustrated in Fig. 9A, shown after pressing the subsequent fill, and adding a third fill operation using the vacuum fill apparatus illustrated in Fig. 5;
[0029] Fig. 9C is a schematic side elevation view of a portion of the substrate illustrated in Fig. 9A, shown after second and third fill operations;
[0030] Fig. 10 is a schematic sectional view' of a suspended vacuum fill apparatus similar to Fig. 5, but configured to suspend the substrate;
[0031] Fig. 11 is a schematic sectional side view of the substrate illustrated in Fig. 9C, shown filled by the vacuum fill apparatus;
[0032] Fig. 12A is a schematic sectional side elevation view of the substrate illustrated in Fig. 11, shown after a plurality of sequences of filling, drying, and pressing operations, and shown with the hole filled with a final fill suspension of small particles;
[0033] Fig. 12B is an enlarged schematic sectional side elevation view of the substrate illustrated in Fig. 12A, shown after pressing the small particles;
[0034] Fig. 12C is an enlarged schematic sectional side elevation view of the substrate illustrated in Fig. 12A, showing a filled hole in accordance with another example; [0035] Figs. 13A-C show a method of delivering the suspension to holes of the substrate during a filling operation in one example, whereby;
[0036] Fig. 13A shows the substrate in an initial angular orientation;
[0037] Fig. 13B shows the substrate in a first angular orientation different than the initial angular orientation;
[0038] Fig. 13C shows the substrate in a second angular orientation opposite the first angular orientation;
[0039] Fig. 13D shows a method of delivering the suspension to holes of the substrate during a filling operation in another example;
[0040] Fig. 14 is a schematic sectional side elevation view of a method step of sintering the substrate;
[0041] Figs. 15A is a schematic side view of adjacent ones of the particles in the hole after pressing and prior to sintering;
[0042] Figs. 15B is a schematic side view of adjacent ones of the particles in the hole after sintering;
[0043] Figs. 16A is a schematic side view of the substrate illustrated in Fig. 14, but after sintering, showing a surface finishing operation;
[0044] Figs. 16B is a schematic side view of the substrate illustrated in Fig. 16A, shown hermetically sealed after the surface finishing operation;
[0045] Fig. 17 is a schematic view of the substrate of Fig. 16A showing an electrically conductive redistribution layer applied to the substrate in accordance with one example;
[0046] Fig. 18A is a schematic view of the substrate of Fig. 16A showing a trench formed in an outer surface thereof;
[0047] Fig. 18B is a schematic view of the substrate of Fig. 18A showing an electrically conductive redistribution layer applied to the substrate in the trench 170;
[0048] Figs. 19A is a schematic top plan view of a centrifuge used to fill the hole in accordance with an alternative embodiment, shown having a plurality of rotatable buckets;
[0049] Figs. 19B is a schematic side elevation view of the substrate illustrated in Fig.
1 A shown placed into one of the buckets and covered with a suspension of electrically conductive particles;
[0050] Figs. 19C is a schematic side view of the bucket illustrated in Fig. 19B, showing the bucket oriented during spinning of the centrifuge; [0051] Figs. 19D is a schematic side view of the bucket illustrated in Fig. 19C, shown after centrifugal forces have forced the electrically conductive particles into the holes of the substrate;
[0052] Figs. 19E is a schematic side view of the bucket illustrated in Fig. 19D. showing removal of suspension from an outer surface of the substrate;
[0053] Figs. 20A is a schematic view of a substrate showing a weakened region after ablation;
[0054] Fig. 20B is a schematic view of the substrate illustrated in Fig. 20A, but showing an electrically conductive layer applied to an inner surface of the substrate;
[0055] Fig. 20C is a schematic view of the substrate illustrated in Fig. 20B, but showing the weakened region removed to reveal a hole, and including a mask applied to the electrically conductive layer;
[0056] Fig. 20D is a schematic view of the substrate illustrated in Fig. 20C, but showing electrically conductive particles being driven into the hole;
[0057] Fig. 20E is a schematic view of the substrate illustrated in Fig. 20C, but showing the electrically conductive particles packed in the hole, and extending along an entire length of the hole;
[0058] Fig. 20F is a schematic view of the substrate illustrated in Fig. 20E, but showing removal of the electrically conductive layer in one example;
[0059] Fig. 20G is a schematic view similar to Fig. 20D, but showing application of electrostatic forces to the suspension so as to fill the holes of the substrate in accordance with another example;
[0060] Fig. 21A is a schematic view of a hard press applied to an overfilled substrate in accordance with another example;
[0061] Fig. 21B is a schematic view of the substrate after the hard press operation;
[0062] Fig. 22 is a schematic overview of an assembly of components configured to be mounted to an interposer of the type described herein.
DETAILED DESCRIPTION
[0063] One or more different disclosures may be described in the present application.
Further, for one or more of the disclosures described herein, numerous alternative embodiments may be described; it should be appreciated that these are presented for illustrative purposes only and are not limiting of the disclosures contained herein or the claims presented herein in any way. One or more of the disclosures may be widely applicable to numerous embodiments, as may be readily apparent from the disclosure. In general, embodiments are described in sufficient detail to enable those skilled in the art to practice one or more of the disclosures, and it should be appreciated that other embodiments may be utilized and that structural, logical, software, electrical and other changes may be made without departing from the scope of the particular disclosures. Accordingly, one skilled in the art will recognize that one or more of the disclosures may be practiced with various modifications and alterations. Particular features of one or more of the disclosures described herein may be described with reference to one or more particular embodiments or figures that form a part of the present disclosure, and in which are shown, by way of illustration, specific embodiments of one or more of the disclosures. It should be appreciated, however, that such features are not limited to usage in the one or more particular embodiments or figures with reference to which they are described. The present disclosure is neither a literal description of all embodiments of one or more of the disclosures nor a listing of features of one or more of the disclosures that must be present in all embodiments.
[0064] A description of an embodiment with several components in communication with each other does not imply that all such components are required. To the contrary, a variety of optional components may be described to illustrate a wide variety of possible embodiments of one or more of the disclosures and in order to more fully illustrate one or more aspects of the disclosures. Similarly, although process steps, method steps, algorithms or the like may be described in a sequential order, such processes, methods and algonthms may generally be configured to work in alternate orders, unless specifically stated to the contrary. In other words, any sequence or order of steps that may be described in this patent application does not, in and of itself, indicate a requirement that the steps be performed in that order. The steps of described processes may be performed in any order practical. Further, some steps may be performed simultaneously despite being described or implied as occurring non-simultaneously (e.g., because one step is described after the other step). Further still, some steps illustrated in a method or within a method step can be omitted. Moreover, the illustration of a process by its depiction in a drawing does not imply that the illustrated process is exclusive of other variations and modifications thereto, does not imply that the illustrated process or any of its steps are necessary to one or more of the disclosure(s), and does not imply that the illustrated process is preferred. Also, steps are generally described once per embodiment, but this does not mean they must occur once, or that they may only occur once each time a process, method, or algorithm is carried out or executed. Some steps may be omitted in some embodiments or some occurrences, or some steps may be executed more than once in a given embodiment or occurrence. Further, some of the steps can be eliminated in some embodiments. Further still, other steps can be added as desired.
[0065] Techniques and mechanisms described or referenced herein will sometimes be described in singular form for clarity. However, it should be appreciated that particular embodiments may include multiple iterations of a technique or multiple instantiations of a mechanism unless noted otherwise. Process descriptions or blocks in figures should be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps in the process.
Alternate implementations are included within the scope of embodiments of the present disclosure in which, for example, functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the
functionalit involved, as would be understood by those having ordinary skill in the art.
[0066] With initial reference to Figs. 1 A-1B, a substrate 20 defines opposed outer surfaces including a first surface 22 and a second surface 24 opposite the first surface. The substrate 20 further includes a plurality of holes 26. The holes 26 extend from the first surface 22 toward the second surface 24 along the central axis. For instance, the holes can extend from the first surface 22 to the second surface 24 along the central axis. The substrate 20 can be cut into wafers of 150 mm, 200 mm, or 300 mm in diameter, but it is recognized that the substrate 20 can define any suitable diameter or other maximum dimension as desired. Thus, the term “diameter” can be used interchangeably with the term“maximum cross-sectional dimension” to denote that the structure of reference need not be circular unless otherwise indicated.
[0067] The holes 26 can have any suitable diameter as desired. For instance, the holes 26 can have a diameter of other cross-sectional dimension that range from 10 .pm to 25 .pm.
The holes 26 can have a depth along their respective central axes that ranges from 100 .pm to 500 .pm. These dimensions are presented by way of example, and it is appreciated that other dimensions are contemplated. The aspect ratio between hole diameter and hole depth are unlimited for this process. Additionally a plurality of different hole diameters may be placed in the same substrate. The holes 26 can be conical in shape, cylindrical in shape, hourglass shaped, or can define any suitable shape along their length. The holes 26 can be arranged in one or more hole arrays 27 as desired. Thus, the substrate 20 can define one or more arrays 27 spaced with each other at any suitable distance suitable for cutting the glass and separating the arrays into 27 discrete components of the substrate 20. While glass substrates can have particular applicability to certain end-use applications, it should be appreciated that substrate 20 can be a glass substrate, a silicon substrate, a ceramic substrate, or any organic substrate or any other substrate of any suitable alternative material as desired. When the substrate 20 is a glass substrate, the glass can be substantially lead-free, including lead-free, in one example. In other examples, the glass can include lead.
[0068] The term substantially“lead-free,” derivatives thereof, and phrases of like import as used herein can refer a quantity of lead is in accordance with the Restriction of Hazardous Substances Directive (RoHS) specifications. In one example, the term“lead-free,” “free of lead,” and derivatives thereof can mean that means that the quantity of lead is less than .1% by weight, including 0% by weight. Alternatively or additionally, the term“lead-free,” derivatives thereof, and phrases of like import as used herein can mean that the quantity of lead is less than 0.1% by volume. In another example, the term“lead-free,” derivatives thereof, and phrases of like import as used herein can mean that the quantity of lead is less than 100 parts per million (ppm).
[0069] At least one or more of the holes 26 can be configured as a through hole 28 that extends through the substrate 20 from the first surface 22 to the second surface 24. Thus, the first surface 22 defines a first opening 23 to the through hole 28, and the second surface 24 defines a second opening 25 to the through hole 28. Otherwise stated, the through hole 28 defines a first end at the first opening 23, and a second end at the second opening 25. Thus, both the first and second ends of the through holes 28 are open to the outer perimeter of the substrate 20. The through hole 28 can be straight and linear from the first opening 23 to the second opening 25. Alternatively, one or more portions of the through hole 28 can be angled, bent, or define any suitable alternative non-straight shape.
[0070] Alternatively or additionally, at least one or more of the holes 26 can be configured as a blind hole 30 that can extend from one of the first and second surfaces 22 and 24 toward the other one of the first and second surfaces 22 and 24. Further, the blind hole can terminate at a location spaced from the other of the first and second surfaces and 22 and 24.
Thus, the blind hole 30 is open to one surface of the substrate 20 at a first end, and internally closed by the substrate 20 at a second end opposite the first end. Otherwise stated, the first terminal end of the blind hole 30 extends to one of the first and second openings 23 and 25 at the first and second surfaces 22 and 24, respectively, and the second terminal end of the blind hole 30 is disposed between the first and second surfaces 22 and 24. It is recognized, however, that the second terminal end of the blind hole 30 can terminate at another hole 26, and thus can be in fluid communication with both the first and second openings 23 and 25. Further, the blind hole 30 can be linear, or can have one or more segments that are angled with respect to each other. One or more of the segments can include a lateral component. The substrate 20 can include a sacrificial hole that extends from the blind hole 30 to an outer surface of the substrate 20. For instance, when the blind hole 30 is open, either directly or through another hole, to the first surface 22 of the substrate 20, the sacrificial hole can extend from the closed end of the blind hole 30 to the second surface 24.
[0071] Referring now to Figs. 2A-2B, in accordance with one example, one or more up to all of the holes 26 can be contain an electrically conductive material so as to define an electrically conductive via 34. In one example, the electrically conductive material can include an electrically conductive fill 35 that is disposed in the respective one or more up to all of the holes 26. The hole arrays 27 including the electrically conductive material illustrated in Figs. 2A-2B can thus define via arrays. In this regard, it will be appreciated that the substrate 20 having electrically conductive vias 34 can be referred to as an electrical component.
[0072] In particular, the through hole 28 that contains the electrically conductive fill 35 can be said to define a through via 36. The buried hole 30 that contains the electrically conductive fill 35 can be said to define a buried via 39. Thus, the term“via” and derivatives thereof as used herein can refer to one or both of the through via 36 and the buried via 39. The electrically conductive fill 35 can extend continuously from the first end of the via 34 to the second end of the via 34. Thus, the electrically conductive fill 35 can define an electrically conductive path along the via 34 in a direction that extends between first end of the via to the second end of the via. For instance, the electrically conductive path can be defined from the first end of the via 34 to the second end of the via 34. In this regard, it is appreciated that the first and second ends of the via 34 can be defined by the first and second openings 23 and 25 when the via 34 is a through via 36. As will be appreciated from the description below in some examples, the fill 35 can include only the electrically conductive material, and air 41. The air 41 can include one or both of ambient air and an inert gas, alone or in combination with hydrogen. The ambient air includes oxygen, nitrogen, and the other gasses of the atmosphere of earth. In one example, the air 41 can be partial or pure argon either alone or in combination with ambient air.
Alternatively or additionally, the air 41 can be partial or pure nitrogen either alone or in combination with ambient air.
[0073] Further, in some examples, at least 50% of the via by volume can include only the fill 35. For instance, in some examples, from 50% up to 100% of the via by volume can include only the fill 35. In particular, in some examples, from 75% up to 100% of the via by volume can include only the fill 35. For instance, from 90% up to 100% of the via by volume can include only the fill 35. In particular, from 95% up to 100% of the via by volume can include only the fill 35.
[0074] The substrate 20 can include at least one or more electrically conductive redistribution layers 37. The redistribution layers can be applied to one or both of the first surface 22 and the second surface 24. The redistribution layers 37 extend over at least one of the electrically conductive vias 34, and are thus in electrical communication with the electrically conductive fill 35. In one example, the substrate 20 can be configured as an electrical interposer configured to make electrical connections at each of the first surface 22 and the second surface 24 at electrical contacts that are in electrical communication with each other through the electrically conductive via 34.
[0075] The electrically conductive fill 35 can be defined by any suitable highly conductive electrically conductive material as desired so as to create the electrically conductive via 34. As will be described in more detail below, the electrically conductive material can be defined by sintered particles of the electrically conductive material. In one example, the electrically conductive material can be metallic. For instance, the electrically conductive material can be copper, gold, silver, or any suitable alternative metal or alloys thereof or other combinations thereof. Alternatively, the electrically conductive material can be non-metallic, for instance an electrically conductive polymer. The electrically conductive material can further include any suitable metal or electrically conductive polymer coated onto particles of any suitable different metal or nonmetal, which can be electrically conductive or electrically nonconductive. Thus, in certain examples, the electrically conductive vias 34 can be referred to as metallized vias 34. Similarly, the substrate 20 can be referred to as a metallized substrate. As will be appreciated from the description below, the electrically conductive vias 34 can be suitable for conducting both direct current (DC) and radiofrequency (RF) current. The electrically conductive fill 35 extends in the via 34 from the first end of the via to the second end of the via, such that the electrically conductive material defines an electrically conductive path from the first end to the second end. Thus, when the via 34 is a through via 36, the electrically conductive fill 35 can define an electrically conductive path from the first surface 22 of the substrate 20 to the second surface 24.
[0076] Referring now to Fig. 3, a method 40 is provided for electrically conductively filling the holes 26 with the electrically conductive fill 35 to thereby create the electrically conductive vias 34. The method begins at step 40, whereby the substrate 20 and at least one suspension 60 of particles suspended in a liquid medium are procured. Next, at step 44, the at least one suspension can be agitated as desired so as to disperse the particles in the liquid medium.
[0077] Next, at step 46, the holes 26 can be filled with one or both of the particles and the liquid medium of the at least one suspension 60. The filling step can be performed by forcing the suspension into the holes 26 under one or both of pressure, which could be a positive pressure or a negative pressure, centrifugal force, and electrostatic force. At step 50, the particles are compacted. The filling and packing steps 46 and 50 define a filling and packing sequence 53 that can be repeated as many times as desired until the hole 26 receives a desired volume of particles 62. In some examples, however, the packing step 50 can be omitted, as will be described in more detail below. In one example, the desired volume of particles 62 can extend from the first end of the hole 26 to the second end of the hole 26. When the hole 26 is a through hole, the particles 62 can extend to one or both of the first surface 22 of the substrate 20 and the second surface 24. In some examples, the holes 26 can be overfilled with the particles 62, such that the particles 62 can extend beyond one or both of the first and second surfaces 22 and 24.
[0078] At step 52, the particles are sintered. After the sintering step, the particles 62 can be subjected to a hard press whereby the particles 62 are packed together and substantially planarized along each of the first and second surfaces 22 and 24, respectively, of the substrate 20. At step 54, the vias can be sealed, and for instance surface finished. In some examples, step 54 can be omitted. Thus, the method can advance from step 52 to step 56. As will be appreciated from the description below, the particles 62 can define a hermetic seal with themselves and with the substrate 20. The combination of the sintered particles 62 and air can define the electrically conductive fill. Finally, at step 56, at least one or more redistribution layers 37 are applied to one or both of the first and second surfaces 22 and 24 of the substrate 20. The steps of the method 40 will now be described in more detail.
[0079] Referring now to Figs. 1 A-4A, the method 40 begins at the step 42, whereby the substrate 20 is procured, and at least one suspension of electrically conductive particles 62 is disposed in a liquid medium 64. Step 42 can include fabricating the substrate 20 having the holes 26 illustrated in Fig. 1, or procuring a substrate 20 with the holes 26. Further, step 42 can include the step of suspending the particles in the liquid medium 64, or procuring the suspension 60. [0080] As described above, the electrically conductive particles 62 can be defined by any suitable electrically conductive material as desired. For instance, the electrically conductive material can be a metal, such as copper, silver, gold. Alternatively, the electrically conductive material can be a combination of more than one metal. For instance, one metal can be coated onto another metal. Alternatively or additionally, the electrically conductive material can be an electrically conductive polymer. In one example, a metal can coat the electrically conductive polymer. Alternatively, the electrically conductive polymer can coat one of the metals. It should be appreciated that one or more of the electrically conductive metals and the electrically conductive polymer can coat any suitable material as desired. In one example, the electrically conductive particles 62 can be silver particles. Alternatively, the electrically conductive particles 62 can be configured as include copper particles coated with silver. Alternatively, the electrically conductive particles 62 can be configured as uncoated copper particles.
[0081] In this regard, it is recognized that silver is a high electrical conductivity metal. Further, silver is a highly ductile metal, which can be useful during sintering. In particular, the present inventors have discovered that the process of sintering silver does not crack glass substrates whose vias are filled with silver particles. Without being bound by theory, it is believed that the malleability of silver particles allows the substrate 20 to expand and contract during and after sintering without damaging the structural integrity of the substrate 20. At the same time, silver exhibits sufficient strength characteristics. Further still, silver is a substantially nonporous metal, which thereby enhances the electrically conductivity of the resulting electrically conductive fill 35 in the via 34.
[0082] Alternatively, as described above, the particles 62 can be copper particles.
While it is recognized that copper is subject to oxidization, it is believed that the formation of oxidation layers that form on the copper particles can be minimized or can be removed from the copper particles during the method steps described herein. For instance, it is believed that at least a quantity of copper oxide produced from oxidation of the copper particles 62 can be removed from the hole 26 when the liquid medium 64 is evacuated from the hole 26 under vacuum or centrifugal forces as described in more detail below. Further, sintering the copper particles 62 as described herein can remove at least a quantity of copper oxide up to substantially all copper oxide produced from oxidation of the copper particles 62 that is in the hole 26 during the sintering step. It can therefore be desirable to sinter the copper at step 52 in reduction conditions for the copper oxide. [0083] Further, at least one anti-oxidation agent can be applied to the particles 62, particularly when the particles 62 are copper. In some examples, the at least one anti-oxidation agent can prevent or reduce oxidation of the copper particles 62. Alternatively or additionally , the at least one anti -oxidation agent can reduce oxidation that has formed on the copper particles. The anti-oxidation agent can be applied to the particles 62 prior to placing the particles 62 in the liquid medium 64.
[0084] For instance, the anti-oxidation agent can be configured as an anti-oxidation coating that coats the particles 62 to define a barrier that impedes exposure of the particles 62 to oxygen from the ambient air, and thus can prevent or reduce oxidation of the copper particles 62. For instance, the anti-oxidation coating can be configured as an anti-agglomeration coating of the type descnbed below. In other examples, the at least one anti-oxidation agent can include a getter material that has a higher affinity to oxygen, for instance in air, than the affinity of copper to oxygen, for instance in air. The step of sintering the particles 62 can be performed while the particles 62 are in the presence of the getter material to reduce oxidation of the copper when present during sintering of the particles 62. In some examples, the getter material can be carbon or titanium or other refractory material. Without being bound by theory or specific formulations, the at least one anti-oxidation agent can include an anti-oxidation coating such as a neoalkoxy titanate that can be applied to the copper particles to prevent or reduce oxidation of the copper particles 62. One example of a neoalkoxy titanate is commercially available under the tradename LICA38 from Kenrich Petrochemicals, Inc. having a place of business in Bayonne,
NJ.
[0085] As illustrated in Fig. 7A, it can be desirable for the particles 62 to be substantially spherical such when they are packed, the particles 62 in the hole 26 define respective interstices 66 therebetween (see., e.g., Fig. 7A) that can combine to define at least one liquid flow path for the evacuation of the liquid medium from the holes 26, leaving behind the particles 62 in the holes 26. Thus, the term“substantially spherical” recognizes that the particles 62 might not be perfectly spherical, but they can approximate the shape of a sphere to the extent that the resulting interstices 66 define a reliable flow path. Thus, the particles 62 can define any shape that they define the interstices 66 described herein. Accordingly, the particles 62 can be at least partially or entirely curved, or can alternatively or additionally include straight edges. Further, it should be appreciated that when the holes 26 are at least partially or entirely filled with the particles 62, the fill 35 can include pores that are defined by the interstices 66. It should be appreciated that the interstices can define internal air pores of the electrically conductive material in the holes 26. In some examples, substantially all pores of the electrically conductive fill 35 can be defined by the interstices. The term“substantially,”“approximately,” derivatives thereof, and words of similar import as used herein can mean within 10% of the stated value or shape, unless otherwise indicated.
[0086] Further, it can be desirable for the electrically conductive particles 62 can be crystallite controlled so that the particles 62 can be sintered without substantial densification, as described in more detail below. While it can be desirable for the silver or copper to be as pure as possible, and thus devoid of organic material, it is recognized that processes for producing the particles 62 that are both substantially spherical silver or copper and crystallite controlled can produce particles having trace amounts of organic material. Therefore,“substantially pure” as used with respect to a material of the particles 62 can mean greater than 90% pure material by weight. In one example, the particles 62 can be greater than 95% pure material by weight. For instance, the particles 62 can be greater than 98% pure material by weight. That is, the particles 62 can be devoid of more than 2% organic impurities by weight. For instance, the particles can be approximately 98.3% pure material by weight. Otherwise stated, in one example, the substantially pure particles 62 can mean 10% or less of organic material by weight, such as less than 5% organic material by weight, and in one example less than 2% of organic material by weight. For instance, the particles can have approximately 1.7% organic material by weight. In one example, the solid particles 62 have a porosity of no greater than approximately 5% by volume.
[0087] Thus, though the electrically conductive material can include a small quantity of organic material as described above, it can be said that the resulting via 34 can include only the electrically conductive material and air. It can further be said that the resulting via 34 can consist essentially of the electrically conductive material and air. As described above, the electrically conductive material can be a metal such as silver or copper in some examples, but other materials are contemplated as set forth herein. Alternatively the silver or copper can be mixed with conductive polymers to get more conduction in the air gaps. Further, the particles 62 can be substantially nonporous, the resulting sintered matrix 51 provides a highly conductive path from the first end of the via to the second end of the via. In one example, the via can conduct DC current and radio frequency (RF) current at desirable rates.
[0088] For instance, the electrically conductive via 34 can conduct RF signals along an entirety of its length with an insertion loss of no more than approximately -0.15 decibels (dB) at an approximately 20 gigahertz (GHz) operating frequency. For instance, the insertion loss can be no more than approximately -1 dB at an approximately 20 GHz operating frequency in some examples. For instance, the insertion loss can be no more than approximately -0.5 dB at an approximately 20 GHz operating frequency in some examples. For instance, the insertion loss can be no more than No more than approximately -0.3 dB at an approximately 20 GHz operating frequency in some examples. For instance, the insertion loss can be no more than approximately -0.1 dB out to an approximately 20 GHz operating frequency some examples. The term“no more than” in this context is used to connote“no less negative than” the stated decibels.
[0089] The liquid medium can be any suitable liquid medium as desired to suspend the electrically conductive particles 62. In one example, the liquid medium 64 can be an alcohol. In particular, the alcohol can be one of isopropanol, ethanol, and methanol. In this regard, it is recognized that metals such as silver and copper can have a zeta potential, or electrical surface charge. Thus, particles of the metals can thus potentially agglomerate with each other. Further, the particles can interact with the substrate that can be electrostatically charged, for instance when the substrate is a glass substrate, and with each other. The alcohol can be mildly polar, and thus can be configured to neutralize the zeta potential of the particles 62.
[0090] The particles 62 can be sized as desired. It will be appreciated that it can be desirable for the particles 62 to be sized sufficiently large such that the interstices 66 define a reliable liquid flow path to evacuate the liquid from the holes 26 of the substrate 20 while leaving behind electrical conductive material in the holes 26. However, it can be desirable for the particles 62 to be sized sufficiently small such that the resulting via 34 contains a suitable volume of the electrically conductive material of the particles so as to define a reliable electrical path from the first end of the via to the second end of the via. In one example, the particles 62 can have an average size that ranges from approximately 1 microns to approximately 10 microns, such as from approximately 2 microns to approximately 10 microns. In one example, the average size of the particles 62 can be range from approximately 2 microns to approximately 4 microns. In another example, the average size of the particles 62 can range from approximately 2.5 microns to approximately 3.5 microns.
[0091] It is recognized, however, that an auxiliary electrically conductive material can be added to the particles 62 in the interstices 66 as part of the electrically conductive fill after the liquid medium 64 has been evacuated. In particular, it is envisioned that the auxiliary electrically conductive material can be added prior to sintering. Alternatively or additionally, it is envisioned that the auxiliary electrically conductive material can be added to the hole after sintering. The reliable electrical path can be configured to reliably conduct one or both .of DC current and RF current. In one example, the particles 62 of the suspension 60 can have an average size that ranges from approximately 1 microns to approximately 10 microns. In one example, the average size of the particles 62 can be range from approximately 2 microns to approximately 4 microns. In another example, the average size of the particles 62 can range from approximately 2.5 microns to approximately 3.5 microns.
[0092] In one example, the electrically conductive fill 35 can include fused particles of different sizes. In one example, the particles can be fused during a sintering operation. For insatnce, the at least one suspension 60 can include a first suspension 60a and a second suspension 60b. The first suspension 60a can contain a plurality of first particles 62a suspended in the liquid medium 64 as illustrated in Fig. 4B. The second suspension 60b can contain a plurality of second particles 62b suspended in the liquid medium 64 as illustrated in Fig. 4C.
The first particles 62a can include any suitable electrically conductive material described herein. Similarly, the second particles 62b can include any suitable electrically conductive material described herein. In one example, the first and second particles 62a and 62b be defined by respective materials that can be the same material. In another examples, the first and second particles 62a and 62b be defined by respective materials that can be different materials. As will be appreciated below, in some examples, the electrically conductive fill can include a bulk fill of the first particles 62a, and a final fill of the second particles 62b that extends from the bulk fill to the first and second ends of the via.
[0093] When material of the first and second particles 62a and 62b is the same material, the material can be a single homogeneous material from the first end of the hole 26 to the second end of the hole 26. When the hole 26 is a through hole, it can be said that the material can be a single homogeneous material from the first surface 22 of the substrate 20 to the second surface 24 of the substrate 20. When the material is a metal, then it can be said that the metal is a single homogeneous metal from the first surface to the second surface. Alternatively, the respective material of the first and second particles 62a and 62b can be different materials. Further, the liquid medium 64 of the first and second suspensions 60a and 60b can be any suitable liquid medium as described herein. The liquid medium 64 of the first suspension 60a can be the same liquid medium or a different liquid medium than that of the second suspension 60b.
[0094] In one example, the first particles 62a can have a first average particle size that ranges from approximately 1 micron to approximately 10 microns, such as approximately 1.2 microns. In one example, the average size of the particles 62 can be range from approximately 2 microns to approximately 4 microns. In another example, the average size of the particles 62 can range from approximately 2.5 microns to approximately 3.5 microns.
[0095] The second particles 62b can have an average particle size less than the average particle size of the first particles 62a. Thus, it can be said that the first particles 62a have a first average particle size, the second particles 62b have a second average particle size, and the first average particle size is greater than the first average particle size. In one example, without being limited unless otherwise indicated, the first average particle size can range from approximately 1.5 to approximately 120 times the first average particle size. In one example, the first average particle size can range from approximately 5 to approximately 20 times the second average particle size. For instance the first average particle size can range from approximately 10 to approximately 15 times the second average particle size.
[0096] In one example, without being limited unless otherwise indicated, the second average particle size can range from approximately 0.01 micron to approximately 1 micron. For instance, the second average particle size can range from approximately 0.05 micron to approximately .9 micron. In particular, the second average particle size can range from approximately 0.15 to approximately 0.75 micron. In particular, the second average particle size can range from approximately 0.15 micron and 0.5 micron. In one example, the second average particle size can range from approximately 0.15 micron and 0.3 micron. For instance, the second average particle size can be approximately 0.22 micron.
[0097] Reference herein to“particles 62” and a“material” thereof is intended to apply to each of the first particles 62a and the second particles 62b unless otherwise indicated.
Similarly, reference herein to“liquid medium” is intended to apply to the liquid medium of each of the first suspension 60a and the second suspension 60b unless otherwise indicated. Similarly still, reference herein to“suspension 60” is intended to apply to each of the first suspension 60a and the second suspension 60b unless otherwise indicated.
[0098] The viscosity of one or both of the first and second suspensions 60a and 60b can be less than that of conventional pastes that have been used in an attempt to metalize vias in glass substrates. The viscosity of one or both of the first and second suspensions 60a and 60b can be in a range from approximately 1 centipoise (cP) to approximately 1,000 cP. For instance, the range can be from approximately 1.5 cP to approximately 50 cP. In another example, the range can be from approximately 1.8 cP to approximately 15 cP. For instance, the range can be between approximately 1.9 cP to approximately 5 cP. [0099] The first suspension 60a can have a solid concentration of by the first particles 62a in a range from approximately 0.1% to approximately 20% by weight. The range can be from approximately 1% to approximately 15% in one example. For instance, the range can be from approximately 1% to approximately 10%. In one example, the solid concentration can be approximately 5%. In another example, the solid concentration can be approximately 10%. Alternatively, the first suspension 60a can have any suitable alternative solid concentration as desired. The second suspension 60b can have a solid concentration of the second particles 62b in a range from approximately 0.1% to approximately 10% by weight. The range can be from approximately 1% to approximately 5% in one example. For instance, the range can be from approximately 1% to approximately 4%. In one example, the solid concentration of the second suspension 60b can be approximately 2%. In another example, the solid concentration can be approximately 10%. Alternatively, the second suspension 60b can have any suitable alternative solid concentration as desired. In this regard, it should be appreciated that any concentration of solid particles above zero can cause the respective liquid medium to allow the particles to flow into the holes 26.
[0100] As described above, it is recognized that at least one anti-agglomeration agent can be applied to the particles 62 to reduce or prevent instances of agglomeration of the particles 62 in the hole 26. Alternatively or additionally, the at least one anti-agglomeration agent can reduce agglomeration of the particles that has occurred. A reduction in agglomeration can result in higher concentrations of particles 62 in the hole 26 that can fill into the hole 26 at more rapid rates. In one example, the at least one anti-agglomeration agent can be configured as an anti- agglomeration coating that coats the particles 62 to thereby reduce or prevent instances of agglomeration of the particles 62 to each other. The coating can be applied to the particles 62 prior to placing the particles 62 in the liquid medium 64. In one nonlimiting example, the anti- agglomeration coating can be oleic acid or steric acid. Oleic acid and steric acid can bum off and form a gas that is evacuated from the hole 26 during the step of sintering the particles 62. While trace amounts of residual material may remain after sintering, it is believed that the residual material is not of a sufficient quantity to meaningfully impact the electrical performance of the via 34. Therefore, when the anti-agglomeration coating is added to either or both of the suspensions 60a and 60b, the via 34 can still be said to include substantially only the electrically conductive material and air, as illustrated in Fig. 2B. It can further be said that the via 34 consists essentially of the electrically conductive material and air. As described above, in one example the anti-agglomeration coating can be oleic acid. In other examples, the anti- agglomeration coating can be a decanoic acid. The decanoic acid can bum off and form a gas that is evacuated from the hole 26 during the step of sintering the particles 62. The anti- agglomeration coating can be applied to the particles 62 prior to placing the particles 62 in the liquid medium 64. The anti-agglomeration coating is configured to prevent the particles 62 from agglomerating. Further, as described above, the anti-agglomeration coating can further define an anti-oxidation coating that prevent or reduce the exposure of the particles 62 to oxygen, thereby preventing or reducing oxidation of the particles 62.
[0101] Alternatively or additionally, the anti-agglomeration agent can be applied to the particles so as to reverse agglomeration of the particles 62 that has occurred. In one example, the anti-agglomeration agent can include sound waves that are applied to the particles 62 during the sonication step described herein. That is, the sound waves can separate, or de-agglomerate, at least some of the particles 62 that have agglomerated in the liquid medium 64. The anti- agglomeration coating applied to the particles 62 can assist the sound waves in de-agglomerating the powders.
[0102] With reference to Fig. 7 A, the particles 62 can define a monomodal distribution 70. Without intending to be limiting unless otherwise indicated herein, in the monomodal distribution 70, the particles 62 can be within a range of plus or minus 100% of the average particle size. For instance, the range can be within plus or minus 50% of the average particle size.
[0103] In one example, without being limiting unless otherwise indicated in the claims, the first particles 62a can define the monomodal distribution 70 can have an average size that ranges from approximately 1 microns to approximately 10 microns, such as approximately 1.2 microns. The terms“approximately” and“substantially” as used herein with respect to dimensions and shapes can be interpreted to mean within 10% of the stated value or shape, unless otherwise indicated. In one example, the average size of the first particles 62a can be range from approximately 2 microns to approximately 4 microns. In another example, the average size of the particles 62 can range from approximately 2.5 microns to approximately 3.5 microns.
[0104] Further, without being limiting unless otherwise specified in the claims, the second particles 62b can define the monomodal distribution 70 that has an average particle size less than the average particle size of the first particles 62a. Thus, it can be said that the first particles 62a have a first average particle size, the second particles 62b have a second average particle size, and the first average particle size is greater than the first average particle size. In one example, without being limited unless otherwise indicated, the first average particle size can range from approximately 1.5 to approximately 120 times the second average particle size. In one example, the first average particle size can range from approximately 5 to approximately 20 times the second average particle size. For instance the first average particle size can range from approximately 10 to approximately 15 times the second average particle size.
[0105] Referring now to Fig. 7B, the first particles 62a of the first suspension 60a can alternatively define a bimodal distribution 72. The bimodal distribution of the first particles 62a can have a fill density of the electrically conductive particles in the via 34 that is greater than the fill density of the monomodal distribution. The fill density can be defined as the density of the particles in the via 34. Thus, it is envisioned that in some examples the vias 34 produced from a bimodal distribution can have a greater electrical conductivity than the vias 34 produced from a monomodal distribution.
[0106] The first particles 62a can include a plurality of first bimodal particles 74 and a plurality of second bimodal particles 76. The first bimodal particles 74 can have a first bimodal average particle size as described above with respect to the first particles 62a of the monomodal distribution. Thus, the first bimodal particles 74 can define the interstices 66 described above. The second bimodal particles 76 can have a second bimodal average particle size that is less than the first bimodal average particle size of the first bimodal particles 74. As shown, the second bimodal particles 76 can be sized to fit in respective ones of the interstices 66 defined by the first bimodal particles 74. In some examples, it can be desirable to maximize the size of the second bimodal particles 76 so that they fit in respective ones of the interstices 66 without expanding the interstices 66. It is appreciated, however, that the second bimodal particles 76 can expand the interstices 66 while increasing the density of the first particles with respect to the monomodal distnbution. Regardless, the first and second bimodal particles 74 and 76 can be said to combine so as to define second bimodal interstices 75 that are smaller than the interstices 66 that can be referred to as first bimodal interstices. Further, the second bimodal interstices 75 can be disposed inside the first bimodal interstices 66
[0107] While not being limiting unless otherwise indicated, the first bimodal particle size and the second bimodal average particle size can define a ratio that ranges from
approximately 4: 1 to approximately 10: 1. For instance, the ratio can be approximately 7: 1. It is envisioned that the size of the interstices 66 that contain the bimodal particles 74 remains sufficiently large such that the bimodal interstices 66 combine to define a liquid flow path to evacuate the liquid medium 64 from the holes 26 of the substrate 20, while sufficiently small such that the resulting via 34 contains a suitable volume of the electrically conductive material of the particles so as to define a reliable electrical path. It should be appreciated that the second particles 62b of the second suspension 60b can also define the bimodal distribution if desired. In particular, one or both of the first and second particles 62a and 62b can include the bimodal distribution. The second bimodal particles 76 can be included in a quantity that ranges from approximately five percent by volume of the hole to approximately 20 percent by volume of the hole. For instance, the quantity can be approximately ten percent by volume of the hole. It is understood that including the second bimodal particles 76 can decrease the viscosity of the suspension during the filling step 46, and can result in a higher green density of the fill more diffuse pore structure of the resulting metallized via.
[0108] It is appreciated that the bimodal distribution can achieve higher packing densities than the single bulk fill prior to sintering. Thus, the resulting electrically conductive fill can be higher density. The second bimodal particles 76 can be a metal different than the metal of the first bimodal particles 74. The second bimodal particles can be any suitable metal. In one example, the second bimodal particles 76 can have a melting point less than that of the first bimodal particles. In one example, the second bimodal particles 76 can comprise indium. In another example, the second bimodal particles 76 can comprise tin. The bimodal particles 76 can form intermetallics or alloys with the first bimodal particles 74 for transient liquid phase sintering. Further, the transient liquid phase sintering can result in templated/shape-holder pore configurations left over from the second bimodal particles 76. The resulting pore structure and associated porosity can be tunable in order to achieve desired RF and DC conductivity for the resulting via. In particular, the pore structure can be tunable based, at least in part, on the volume of the second bimodal particles 76 and the average particle size of the second bimodal particles 76. Alternatively, if desired, one or both of the volume and average particle size of the second bimodal particles 76 can be controlled to eliminate a continuous porosity from the first end to the second end. Further, the transient liquid phase can result in less organic
contamination, better via wall adhesion of the fill, and more controllable via geometries.
[0109] It is further recognized that the alloy can be temperature stable during a future RDL step. In particular, the sintering step causes the second bimodal particles 76 to melt and liquify in the first bimodal particles 74, which creates the alloy that has a melting point greater than the temperature at which the RDL layer is applied.
[0110] In one example, the hole can be overfilled with the bimodal particles 60a when the packing step is performed. Further, the bimodal particles 60a can be less compressible than a single mode fill. Thus, it is envisioned that a plating can be applied to the ends of the via and the outer surfaces of the substrate. Further, a redistribution layer can be applied with our without the plating.
[0111] It is recognized that the bimodal particles 60a can be filled to a level outboard of the outer surface of the substrate. In particular, a sacrificial layer can be applied to the outer surface having an aperture that is in alignment with the hole of the plate. The sacrificial layer thus extends along a length that effectively increases the length of the hole. Thus, the hole of the substrate can be filled, and the aperture of the sacrificial layer can be at least partially or entirely filled. The sacrificial layer can be removed prior to or after compression of the fill. It is envisioned that the compressed fill can be substantially coplanar with outer surface of the substrate after the sintering step. Accordingly, a redistribution layer alone or in combination with plating can be applied to the sintered fill 35 without performing a final fill. Alternatively, a final fill can be performed if desired, as described in more detail below.
[0112] Alternatively, an electrically conductive layer can be applied to one or both outer surfaces of the substrate prior to filling the hole. The electrically conductive layer can further extend along the inner wall of the hole. For instance, the electrically conductive layer can extend along one or both outer regions of the inner wall. The electrically conductive layer can be titanium in one example. It is envisioned that the fill 35 can bond to the electrically conductive layer during the sintering step to create a hermetic seal.
[0113] Referring now to Fig. 7C, the first particles 62a of the first suspension 60a can alternatively define a trimodal distribution 73. The trimodal distribution of the first particles 62a can have a fill density of the electrically conductive particles in the via 34 that is greater than that of the bimodal distribution, and thus also greater than the monomdal distribution. Thus, it is envisioned that in some examples the vias 34 produced from the trimodal distribution 73 can have a greater electrical conductivity than the vias 34 produced from each of the bimodal distnbution and the monomodal distribution.
[0114] The first particles 62a can include the plurality of first bimodal particles 74 as described above that define first trimodal particles, the plurality of second bimodal particles 76 as described above that define second trimodal particles, and a plurality of third trimodal particles 78. The first trimodal particles 74 can have a first trimodal average particle size as described above with respect to the first particles 62a of the monomodal distribution. Thus, the first trimodal particles 74 can define the interstices 66 described above. The interstices 66 of the trimodal distribution 73 can be referred to as first trimodal interstices. The second trimodal particles 76 can have the second trimodal average particle size that is less than the first bimodal average particle size of the first trimodal particles 74 as described above with respect to the first and second bimodal particles. Thus, the second trimodal particles 76 can be sized to fit in the first trimodal interstices 66 so as to define second trimodal interstices 75 as described above.
[0115] Further, the third trimodal particles 78 can be packed in the hole 26 so as to be disposed in the second trimodal interstices 75 As shown, the third trimodal particles 78 can be sized to fit in respective ones of the second trimodal interstices 75 defined by the first trimodal particles 74 and the second trimodal particles 76. In some examples, it can be desirable to maximize the size of the third trimodal particles 78 so that they fit in respective ones of the second trimodal interstices 75 without expanding the interstices 75. It is appreciated, however, that the third bimodal particles 78 can expand the second trimodal interstices 75 while increasing the density of the first particles 62a with respect to the bimodal distribution. Regardless, the first and second and third bimodal particles 76 and 78 can be said to combine so as to define third trimodal interstices 69 that are smaller than the second trimodal interstices 75.
[0116] The third trimodal particles 78 can have a third trimodal average particle size that is less than the second trimodal average particle size. While not being limiting unless otherwise indicated, the second trimodal average particle size and the third trimodal average particle size can define a ratio that ranges from approximately 4: 1 to approximately 10: 1. For instance, the ratio can be approximately 7: 1. It should be appreciated that the second particles 62b of the second suspension 60b can also define a trimodal distribution if desired. It should be appreciated that the second particles 62b of the second suspension 60b can also define a trimodal distnbution if desired. Thus, one or both of the first and second particles 62a and 62b can define the trimodal distribution. Alternatively, the trimodal distribution can be present in a single suspension if desired.
[0117] When the second particles 62b defines the bimodal or trimodal distribution, and the second particles 62b define the final fill, the bimodal or trimodal distribution can create a hermetic seal at one or both of the first and second ends of the electrically conductive fill 35, as described below.
[0118] In one example, the third trimodal particles 78 can be made of any suitable electrically conductive material. For instance, the third trimodal particles 78 can be the same material as the first trimodal particles 74. Thus, in one example, the third trimodal particles 78 can be made of silver. During the sintering step, the second trimodal particles 76 can transport the third trimodal particles 78 during the transient liquid phase. [0119] Referring again to Figs. 1A-4C in general, it is envisioned that the fill 35 can have a porosity between approximately 10% and approximately 60% by volume. For instance, the porosity can be between approximately 20% and approximately 50% by volume. The porosity can depend on several factors, including particle size, the nature of the distribution (e.g., monomodal, bimodal, or trimodal), and any electrically conductive additives that may be added to the electrically conductive material either before sintering or after sintering. In other examples, it is recognized that the particles 62 can be provided as a quadmodal distribution. In still other examples, it is recognized that the particles 62 can be provided as a quintmodal distribution.
[0120] It is recognized that the hole 26 can contain a bulk fill and a final fill. The bulk fill can occupy a first portion of the hole 26 or via, and the final fill can occupy a second portion of the hole 26 or via that is different than the first portion. For instance, the bulk fill can occupy an inner portion of the hole 26 or via, and the final fill can occupy opposed outer regions of the hole 26 or via. Thus, the final fill can extend from the bulk fill to each of the opposed ends of the hole 26 or via. For instance, when the hole or via is a through hole or through via, the final fill can extend from the bulk fill to each of the first and second surfaces 22 and 24 of the substrate 20. Thus, it can be said that the electrically conductive fill 35 can include one or both of the bulk fill and the final fill. The bulk fill can be defined by the first particles 62a in one example. The final fill can be defined by the second particles 62b in one example.
Alternatively, both the bulk fill and the final fill can be defined by the first particles 62a as desired. In this regard, it is recognized that the method 40 can include multiple steps of bulk filling the hole. One or more of the steps of bulk filling can be performed with the first particles 62a of one of the monomodal distribution, the bimodal distribution, and the trimodal distribution, and one or more other steps of bulk filling can be performed with the first particles of a different one of the monomodal distribution, the bimodal distribution, and the trimodal distribution.
Alternatively, all bulk filling steps can be performed with the first particles of the same one of the monomodal distribution, the bimodal distribution, and the trimodal distribution.
[0121] The bulk fill can occupy a length of the hole 26 or via that ranges from approximately 50% to 100% of the total length of the hole 26 or via. For instance, the bulk fill can occupy a length of the hole 26 or via that ranges from approximately 80% to approximately 100% of the total length of the hole 26 or via. In particular, the bulk fill can occupy a length of the hole that ranges from approximately 90% to approximately 99% of the total length of the hole 26 or via. In one example, the bulk fill can occupy a length of the hole or via that ranges from approximately 94% to approximately 99% of the total length of the hole 26 or via 34. In one specific example, the bulk fill can occupy a length of the hole or via that ranges from approximately 96% to approximately 98% of the total length of the hole 26 or via. The final fill can extend from the bulk fill to the first end of the hole 26 or via. Further, the final fill can extend from the bulk fill to the second end of the hole 26 or via. Moreover, the portion of the hole said herein to be occupied by the final fill is not occupied by the bulk fill in one example.
In one specific example, the final fill can occupy a length that ranges from approximately 1% to approximately 4% of the total length of the via 34 at each of the first and second ends of the via 34.
[0122] The present inventors recognize that the electrically conductive particles 62 can tend to settle in the liquid medium 64, especially if stored for a prolonged period of time, as illustrated at Fig. 4A. Therefore, at step 44, and as shown in Figs. 4B-4C, the suspension 60 can be agitated so as to cause the particles 62 to disperse the particles 62 in the liquid medium 64. For instance, in one example, the suspension can be sonicated so as to cause the particles 62 to disperse in the liquid medium 64. Thus, it can be appreciated that the liquid medium 64 is configured to support the particles 62 as a dispersion 68. It should therefore be appreciated that the liquid medium can be any liquid that is suitable to support the particles 62 so as to assist in filling the holes 26 of the substrate with the particles 62 in accordance with at least one of the methods described herein.
[0123] Next, at step 46, the holes 26 can be filled with the at least one suspension 60. As will be appreciated from the Next, at step 46, the holes 26 can be filled with the at least one suspension 60. As will be appreciated from the description below, the suspension 60, and thus the particles 62, can be urged to flow into the holes 26 under a force defined by a pressure differential across the substrate 20 as illustrated in Figs. 5 and 10. The pressure differential can be defined by an air pressure differential. For instance, the air pressure differential can be defined by a vacuum force. Thus, the particles 62 can be urged to flow into the holes 26 under a vacuum pressure using a vacuum apparatus. Alternatively, the air pressure differential can be defined by a positive air pressure. Alternatively or additionally, the force that urges the particles 62 to flow into the holes 26 can be a centrifugal force, for instance using a centrifuge as described below with respect to Figs. 19A-19E. Alternatively or additionally, the force that urges the particles 62 to flow into the holes 26 can be an electrostatic force as described below with reference to Figs. 20A-20F. description below, the particles 62 can be urged to flow into the holes 26 under air pressure, for instance using a vacuum apparatus illustrated in Figs. 5 and 10. Alternatively or additionally, the particles 62 can be urged to flow into the holes 26 under centrifugal force, for instance using a centrifuge as illustrated in Fig. 19A. Alternatively or additionally, the particles 62 can be urged to flow into the holes 26 under an electrostatic force as illustrated in Figs. 20A-20F.
[0124] The step 46 of filling the holes 26 under air pressure in one example will now be described with reference to Figs. 5-6B. In particular, a fluid pressure fill apparatus 82 is configured to apply a pressure differential across the suspension 60 that urges the suspension 60 to flow into the holes 26. For instance, the fluid pressure fill apparatus 82 can be configured as an air pressure fill apparatus that is configured to apply an air pressure differential across the suspension 60 that urges the suspension 60 to flow into the holes 26. In one example, the air pressure fill apparatus 82 can be configured as a vacuum fill apparatus 84 configured to apply vacuum pressure to the suspension 60 that creates the air pressure differential. In another example, the vacuum fill apparatus 82 can be modified to apply forced air under positive pressure to the suspension 60 that creates the air pressure differential. It is recognized that the suspension will be urged to flow in a direction from higher pressure to lower pressure.
[0125] As illustrated in Fig. 5, the vacuum fill apparatus 84 can include a frame 86 that defines an internal cavity 88 that at least partially defines a vacuum chamber 90. The frame 86 includes a frame body 87 that defines an open end 92 to the internal cavity 88. At least a portion of the substrate 20, and in particular the holes 26, is in fluid communication with the vacuum chamber 90. Further, the substrate 20 is sealed to the frame 86, such that generated vacuum pressure is applied to the substrate 20, and thus the holes 26 without drawing any significant air into the internal cavity through an interface between the substrate 20 and the frame 86. In one example, the vacuum fill apparatus 84 can include a gasket 94 that seals the substrate 20 to the frame 86 with respect to airflow at the interface between the substrate 20 and the frame 86. For instance, the gasket 94 can extend across the interface between the substrate 20 and the frame 86. The gasket 94 can be made of any suitable material as desired. For instance, the gasket 94 can be made of rubber. In one example, the gasket 94 can be a vulcanized silicone. In particular, the gasket 94 can be a room-temperature vulcanizing silicone (RTV silicone).
[0126] The frame 86 can include a frame body 87 and a shelf 96 that is attached to the frame body 87 so as to support, directly or indirectly, at least a portion of the substrate 20. The shelf 96 can close a portion of the open end 92. For instance, the shelf 96 can close an outer perimeter of the open end 92. The vacuum fill apparatus 84 can include a seal member 98 that seals the shelf 96 to the frame body 87. Thus, the shelf 96 can be separate from the frame body 87. The seal member 98 can define a nonporous interface with respect to airflow between the shelf 96 and the frame body 87 when the vacuum chamber 90 is under negative pressure. It should be appreciated that the shelf 96 can be monolithic with the frame body 87. The frame body 87 can define an outlet 91 that is configured to be coupled to a vacuum source so as to induce negative pressure in the vacuum chamber 90. Both the frame body 87 and the shelf 96 can be substantially nonporous with respect to airflow therethrough when the vacuum chamber 90 is under negative pressure.
[0127] The vacuum fill apparatus 84 can further include a filter media 100 that is positioned between at least a portion of the substrate 20 and the vacuum chamber 90. For instance, the filter media 100 can be aligned with the openings that are to receive the suspension 60. The filter media 100 can be porous with respect to air and the liquid medium 64, but nonporous with respect to the particles 62. Thus, both air and the liquid medium 64 are able to pass through the filter media, while the particles 62 remain in the holes 26. The gasket 94 can further seal the substrate 20 to the filter media 100 with respect to airflow at an interface between the substrate 20 and the filter media 100. Thus, a first interface 102 between substrate 20 and the filter media 100 is sealed with respect to airflow therebetween, and a second interface 104 between the filter media 100 and the frame 86 is sealed with respect to airflow therebetween. It should be appreciated that the same gasket 94 can seal each of the first and second interfaces 102 and 104. Alternatively, a first gasket can seal the first interface 102, and a second gasket separate from the first gasket can seal the second interface 104. Thus, it can be said that at least one gasket seals the first and second interfaces 102 and 104.
[0128] The filter media 100 can be made of any suitable material as desired that is suitable to allow the liquid medium 64 and air to pass through while preventing the particles 62 from passing through. A non-limiting list of potential materials for the filter media includes glass microfibers, cellulose, mixed cellulose ester (MCE), Cellulose acetate, Cellulose nitrate, Po!ytetrafluoroefhy lene (PTFE), Polyamide, Polyimide-imide, Poly ether sulfone,
Polyvinylidenedifluoride, Polyacrylonitrile, Polyvinylidenedifluoride, phenol-formaldehyde, VVPP, VVLP, HVLP, as well as many filter membrane types sold commercially by such companies as Millipore, Membrane Solutions, Whatman, and Ahlstrom, and under such trade names as Durapore, ExpressPlus, Isopure, etc. as examples.
[0129] Because the first and second interfaces 102 and 104 are sealed, a substantially entirety or an entirety of the vacuum pressure in the vacuum chamber 90 can be applied to the holes 26 of the substrate 20. It should be appreciated that the gasket 94 prevents airflow through the substrate 20 at an exclusion zone 106 of the substrate 20 that is covered by the gasket 94. Therefore, it may be desirable to produce the substrate 20 with no openings at the exclusion zone 106. In one example, the exclusion zone 106 can be disposed at an outer perimeter of the substrate 20, though it should be appreciated that any location of the substrate 20 that is covered by the at least one gasket 94 can define the exclusion zone 106.
[0130] The vacuum fill apparatus 84 can further include a support member 108 that is configured to support, directly or indirectly, at least a portion of the substrate 20. In particular, the support member 108 can be aligned with the holes 26 of the substrate 20 that are to receive the suspension 60 under the induced pressure differential. The support member 108 can be supported by the frame 86 so as to span at least a portion of the open end 92 up to an entirety of the open end 92. In particular, the support member 108 can be supported by the shelf 96.
Further, because the filter media 100 is aligned with the holes 26, the filter media 100 is similarly aligned with the support member 108. In one example, the filter media 100 can be disposed between the substrate 20 and the support member 108. In particular, the filter media 100 can rest on the support member 108, and the substrate 20 can rest on the filter media 100.
[0131] Each of substrate 20, the filter media 100, and the support member 108 define an inner surface 97 that faces the vacuum chamber 90, and an outer surface 99 that is opposite the inner surface 97. The outer surface 99 of the substrate 20 can be defined by one of the first surface 22 and the second surface 24. The inner surface 97 of the substrate 20 can be defined by the other of the first surface 22 and the second surface 24. At least a portion of the inner surface of the support member 108 can be open to the vacuum chamber 90. At least a portion of the inner surface of the filter member 100 can rest on at least a portion of the outer surface of the support member 108. At least a portion of the inner surface 97 of the substrate 20 can rest on at least a portion of the outer surface of the filter member 100. The gasket 94 can rest on the outer surface 99 of the substrate at the exclusion zone 106. Thus, each of the holes 26 that receives the suspension 60 can be aligned with each of the filter member 100 and the support member 108 with respect to the length of the holes 26, which is coincident with the direction of through the holes 26 that defines the air pressure differential.
[0132] The support member 108 can be made from any suitable material that is porous with respect to both air and the filter media 100. In particular, the support member 108 can have a porosity greater than that of the filter media 100. Thus, both air and the filter media are able to pass through the support member 108. In one nonlimiting example, the support member 108 can be defined by a fritted glass (also referred to as a glass fnt). Thus, the support member 108 can be a rigid support member.
[0133] During operation, a quantity of the suspension 60 is applied to the outer surface 99 of the substrate 20, such that the suspension covers at least a portion of the outer surface 99. For instance, the suspension 60 can be coated onto the outer surface 99. During a bulk fill operation, the suspension 60 can be defined by the first suspension 60a. As will be appreciated from the description below, during a final fill operation, the suspension 60 can be defined by the second suspension 60b, though it should be appreciated that other sized particles may be sufficient for the final fill. For instance, the first suspension 60a can be used for the final fill.
[0134] In particular, the suspension 60 is applied to a fill zone of the substrate 20. The fill zone of the substrate 20 can be defined by the holes 26 that are in alignment with the filter media and the support member 108. Thus, the suspension 60 can cover the holes 26 that are to be filled. For instance, the suspension 60 can extend over and across the holes 26. Alternatively or additionally, as described in more detail below, the suspension 60 can be induced to flow along the outer surface 99 of the substrate 20 across the holes 26. It is appreciated that the term “filled” as used herein with respect to the suspension 60 includes at least partially filled or entirely filled, unless otherwise indicated.
[0135] The filling step 46 can include the step of applying the suspension 60 to the outer surface 99 of the substrate 20. The vacuum source can be activated so as to apply negative pressure to the vacuum chamber 90. It should be appreciated that the vacuum source can be activated before the suspension 60 is applied to the substrate 20, during application of the suspension 60 to the substrate 20, or after the suspension 60 has been applied to the substrate 20.
[0136] Referring to now also to Fig. 6A, the negative pressure urges the suspension 60 to flow from the outer surface 99 of the substrate 20 into the respective holes 26 that are open to the outer surface 99 of the substrate. As described above, the filter media 100 extends across the inner surface 97 of the substrate 20 across the holes 26. Because the filter media 100 and the support member 108 are porous with respect to air, the negative pressure in the vacuum chamber 90 creates a pressure differential across the holes 26, which can be configured as a negative pressure that draws a quantity of the suspension 60 into the holes 26. Thus, both the liquid medium and the particles 62 suspended in the liquid medium 64 flow into the holes 26 under the pressure differential. Because the filter media 100 is porous with respect to the liquid medium 64 but nonporous with respect to the particles 62, the pressure differential causes the liquid medium 64 to flow through the filter media 100. Because the particles 62 are unable to flow through the filter media 100, the particles 62 remain in the holes 26. Thus, the particles 62 collect in the hole 26 as the liquid medium 64 flows through the holes 26. Further, because the filter media 100 can be flat against the inner surface 97 of the substrate 20, the particles 62 can accumulate against the filter media 100, and can thus be substantially flush with the inner surface 97 of the substrate 20. Further, when all filling steps have been completed, the particles 62 can extend out with respect to the outer surface 99 of the substrate 20. Alternatively, the particles can be substantially flush with the outer surface 99. Alternatively, the particles 62 that extend out from the outer surface 99 can be removed from the outer surface, for instance, by driving a wand across the outer surface 99 of the substrate 20 to remove the particles 62 that extend out from the outer surface 99.
[0137] As described above, the holes 26 can be through holes, such that one or both of the negative pressure and the flow of liquid medium 64 from the outer surface 99 of the substrate 20 to the inner surface 97 of the substrate 20 causes the particles 62 to pack against each other, thereby defining one or more of the interstices of the type described above with respect to Figs. 7A-7C, depending on the nature of the particle size distribution. In particular, a vacuum force applied against the inner surface 97 of the substrate 20 can draw the suspension from the outer surface into the holes 26. Alternatively, a positive air pressure applied to the outer surface 99 can cause the suspension to flow into the holes 26 toward the inner surface 97. Air and the liquid medium of the suspension can evacuate from the through hole 26. Alternatively, if the hole 26 is a blind hole of the type described above, a sacrificial hole can extend from the blind hole to an outer surface of the substrate 20 so as to create a through hole. Thus, the electrically conductive particles 62 can be forced into the blind hole and the sacrificial hole under one or more up to all of forces of pressure differential, centrifugal forces, and electrostatic forces. In order to prevent the sacrificial hole from acting as an electrically conductive via, the sacrificial hole can be capped at a location adjacent the second surface 24 with an electrical insulative cap. Thus, the redistribution layer will not be in electrical communication with metal in the sacrificial hole.
The electrically insulative cap can seal the sacrificial hole to provide hermeticity to the sacrificial hole as described herein. Alternatively or additionally, at least some up to all of the metal can be removed from the sacrificial hole. For instance, a laser can ablate the metal in the sacrificial hole without removing the metal from the blind hole. Alternatively or additionally, the sacrificial hole can be etched so as to remove the metal in the sacrificial hole without removing the metal from the blind hole. Alternatively or additionally still, the redistribution layer can avoid contact with the metal in the sacrificial hole, for instance at the second surface 24. [0138] It is recognized that the particles 62 in practice might not be as highly packed as the particles 62 schematically illustrated in Figs. 7A-7C. Accordingly, the resulting interstices may be sized greater than those illustrated in Figs. 7A-C, which allows the liquid medium 64 to flow through the particles 62 at greater flow rates. Further as described above, the interstices of the packed particles 62 can define a flow path that allows the liquid medium 64 to flow through the hole 26 and evacuate the hole through the filter media 100. Thus, the liquid medium 64 that has entered the holes 26 is also removed from the holes 26. As the suspension 60 continues to flow into the hole 26, the particles 62 accumulate within the hole 26 until the filling step 46 is completed.
[0139] Further, because the support member 108 is porous with respect to the liquid medium 64, the liquid medium 64 can be drawn under the vacuum pressure into the vacuum chamber 90. The vacuum pressure can be any pressure below atmospheric, depending on the desired speed of the filling process. In one nonlimiting example, the negative pressure can range between any pressure below atmospheric up to approximately 120 KPa, such as approximately 80 KPa.
[0140] The frame 86 can define a drain 114 that extends through the frame body 87 and in fluid communication with the vacuum chamber 90. Thus, the drain 114 can provide an outlet for the flow of the liquid medium 64 out the vacuum chamber 90 as expelled liquid medium 64. The expelled liquid medium 64 can be discarded. Alternatively, the expelled liquid medium 64 can be reused. In one example, a quantify of particles 62 can be fed feed into a quantify of the expelled liquid medium 64 so as to produce suspension 60 for use in a subsequent fill operation of the substrate 20, or for a fill operation of a different substrate 20. In one example, the expelled liquid medium 64 can be circulated past a hopper of dry particles 62 as a stream. The hopper can release a quantify of dry particles 62 into the stream so as to produce the suspension 60.
[0141] While it is appreciated that the filter media 100 can be nonporous with respect to the particles 62 as described above, it is recognized that the potential exists that the filter media 100 may be porous with respect to a quantify of the particles 62 less than an entirety of the particles 62 that enters the holes 26. Whether the filter media 100 is nonporous with respect to all of the particles 62 or some of the particles 62, the particles 62 that do not pass through the filter media 100 can accumulate in the holes 26 in the manner described above.
[0142] With continuing reference to Fig. 6A, is recognized that the pressure differential causes an aligned portion of the suspension 60 that is disposed on the outer surface 99 at a region of alignment 110, whereby the suspension is aligned with a respective hole 26. Thus, the suspension 60 in the region of alignment can be forced into the respective hole 26 under the pressure differential. Further, the pressure differential urges an offset portion of the suspension 60 that is disposed on the outer surface 99 of the substrate 20 at a region of influence 112 to flow into the respective hole 26. The region of influence 112 can have a shape of a circle on the outer surface 99 of the substrate 20, or any suitable alternative shape as desired. The offset portion of the suspension disposed at the region of influence 112 is positioned laterally offset from the respective hole 26 along a lateral direction that is perpendicular to the length of the holes 26.
The region of influence is positioned at a location sufficiently close to the respective hole 26 so as to be drawn into the hole 26 under the force from the pressure differential. It has been found that the region of influence 112 is substantially spherical. However, it is envisioned that the region of influence 112 can be alternatively shaped depending on a number of factors including the dispersion gradient of the particles 62 in the liquid medium. It should be recognized that the suspension 60 disposed on the outer surface 99 of the substrate 20 can be agitated during the filling step 46, thereby maintaining the dispersion of the particles 62 in the liquid medium 64.
For instance, the substrate 20 can be vibrated, shook, or otherwise moved in such a manner so as to agitate the suspension 60 and cause the suspension to travel either to the respective hole 26, or to the region of influence 112 so as to be forced into the respective hole 26.
[0143] Depending on the volume of suspension 60 applied to the outer surface 99 of the substrate 20, the volume of the aligned portion of the suspension 60 and the offset portion of the suspension 60 may be sufficient to fill the hole 26. Thus, in one example, the filling step 46 can be completed when a substantial entirety of the hole 26 is filled with particles 62. Alternatively, it is recognized that the volume of the aligned portion of the suspension 60 and the offset portion of the suspension 60 may not be sufficient to fill the hole 26 in one fill operation in some examples. In this case, the vacuum pressure fails to draw additional quantities of suspension 60 into the hole 26, leaving a volume of particles 62 in the hole 26 that is less than a volume of particles 62 sufficient to fill a substantial entirety of the hole 26 from the first end of the hole to the second end of the hole. It should therefore be appreciated that the step 46 of filling the hole 26 can include partially filling the hole 26 and filling a substantial entirety of the hole 26.
[0144] Once the liquid medium 64 has been drawn into the hole 26 from the regions of alignment 110 and influence 112 under the vacuum pressure, and no other liquid medium 64 is available to be drawn into the hole 26 under the pressure differential, continued application of the pressure differential to the hole 26 draws air through the hole 26. The drawn air forces the liquid medium 64 in the holes to evacuate the hole 26 through the flow path defined by the interstices. Because the electrically conductive material is at least substantially nonporous, the liquid medium 64 does not enter the electrically conductive material. Rather, the liquid medium 64 evacuates the hole 26 under the pressure differential. Thus, the pressure differential applied during the filling step causes the packed particles 62 in the hole to be at least substantially dry or entirely dry with respect to the liquid medium 64.
[0145] It is appreciated that once the liquid medium has vacated the hole 26, the resulting packed electrically conductive particles 62 can be in contact with each other so as to define a first or initially packed powder 63 of a first fill 65. The first or initially packed powder 63 can be configured as a bulk fill as described herein. It should be recognized that when the liquid medium 64 has evacuated the hole, the surface charge of the particles 62 is no longer neutralized by the liquid medium 64. Accordingly, the particles 62 can agglomerate to each other, so that the particles 62 in the hole 26 defines a volume of packed particles.
[0146] In one example, the filling step 46 can include the step of causing additional suspension 60 to be brought into one or both of the region of alignment 110 and the region of influence 112. The additional suspension 60 can increase the volume of particles 62 that becomes packed in the hole 26. For instance, the additional suspension 60 can cause the hole 26 to be filled substantially in its entirety with the particles 62. Alternatively, the additional suspension 60 can increase the volume of the particles 62 in the hole to a volume less than the volume of particles 62 sufficient to substantially fill the hole, but greater than the volume of particles 62 that become packed in the hole 26 without the causing step.
[0147] For instance, referring now to Figs. 6A and 13A-13C, the causing step can include the step of rocking the substrate 20 so as to angulate the substrate 20 back and forth in one or more planes of angulation. In particular, the causing step can include the step of rocking the fluid pressure fill apparatus 82 including the substrate 20 back and forth. The rocking step can cause the suspension 60 on the outer surface 99 of the substrate 20 to flow across the outer surface 99. Thus, quantities of the suspension can flow into one or both of the region of alignment 110 and the region of influence 112 of the hole 26. As the substrate 20 is
continuously rocked, additional quantities of the suspension 60 can replace quantities of suspension that have flowed into the hole 26 from one or both of the region of alignment 110 and the region of influence 112. A rocker member 209 can be actuated to apply the rocking step. It is recognized that the substrate 20 can be rocked manually by manually actuating the rocker member. Alternatively, the vacuum fill apparatus 84 can define a rocking platform that supports the substrate 20 directly or indirectly, and is configured to rock the substrate 20 automatically. It is appreciated that the fluid pressure fill apparatus 82 can include a dam 116 that captures the suspension 60 and prevents the suspension 60 from flowing off of the substrate 20 as the substrate 20 is rocked. The dam 116 can be defined by the at least one gasket 94 in one example. For instance, the at least one gasket 94 can be defined by the at least one gasket that seals the first interface 102 as described above with reference to Fig. 5. The dam 116 can extend up with respect to the substrate 20 at a sufficient height so as to prevent the suspension from spilling off the dam 116 during the step of rocking the substrate 20.
[0148] Alternatively, referring now to Fig. 13D, the causing step can include the step of causing the suspension to cross-flow fill into the holes 26. In particular, the suspension 60 can be applied to the outer surface 99 of the substrate 20 at a location laterally spaced from the holes 26. The substrate 20 can then be tilted, which causes the suspension 60 to flow across the outer surface 99 and sequentially over the holes 26. As the suspension 60 flows over a first hole 26, a volume of the suspension 60 can flow into the first hole 26. The suspension 60 then flows over a second hole 26 adjacent the first hole 26 so as to cause a volume of the suspension 60 to flow into the second hole 26. Accordingly, the tilting of the substrate 20 can cause the suspension to sequentially flow over the holes 26. The suspension can flow into the holes 26 under gravitational forces. In this regard, the suspension can flow into the holes 26 under gravitational forces as the substrate 20 is rocked as described above with respect to Figs. 13A-13C.
Alternatively, tilting the substrate 20 can cause the suspension to enter the region of influence, where it can be drawn into the hole. For instance, as the suspension 60 flows over a given hole 26, the hole can be filled with the suspension 60 under forces applied to the suspension arising from the pressure differential in the manner described above. Further, as described above, after the causing steps of Figs. 13A-13D have completed, continued application of the vacuum pressure to the hole 26 draws air into the hole 26, thereby at least substantially drying the hole 26.
[0149] As illustrated in Fig. 3, once the liquid medium has been removed from the hole 26 during the step of filling the holes 26, the packing density of the particles 62 that were drawn into the hole 26 in the immediately preceding filling step 46 can be increased at packing step 50. In one example, referring now to Figs. 8A-8B, the substrate 20 can be placed in an envelope 118. The envelope 118 includes a first laminate 119a and a second laminate 119b spaced from the first laminate 119a so as to define an internal space 124 that is size and configured to receive the substrate 20. [0150] In particular, the first laminate 119a can include a first outer sheet 120a and a first inner layer 122a. The second laminate 119b can include a second outer sheet 120b and a second inner layer 122b. The first and second inner layers 122a and 122b face each other, and thus face the substrate 20 when the substrate 20 is disposed in the internal space. As will be appreciated from the description below, the first and second inner layers 122a and 122b can be referred to as first and second packing members, respectively, that are configured to apply pressure to the dry initially packed powder 63 that further packs the dry initially packed powder 63 into highly packed powder 77 whose particles 62 that are pressed together more than when the particles 62 are packed particles after the filling and removing step 46 and before the packing step 50. In particular, the first and second inner layers 122a and 122b can be sufficiently flexible so as to extend into the respective holes 26 to pack the particles 62. In this regard, the envelope 118 can be referred to as a soft pack envelope. Similarly, the packing step 50 can be referred to as a soft packing step. It will be appreciated that the density of particles 62 in the holes 26 after the packing step 50 can be greater than after the filling step 46 and prior to the packing step 50.
In this regard, packing step 50 can also be referred to as a densification step.
[0151] The internal space 124 is sized and configured to receive the substrate 20 after the step of removing the liquid medium 64 from the holes 26. Thus, the inner layers 122 face respective opposed surfaces of the substrate 20. The outer sheets 120 are nonporous with respect to air and flexible, and can surround the inner layers 122. Accordingly, when the first and second laminates 119a and 119b are the fused to each other so that the internal space 124 is fully enclosed so as to define an enclosure 126, air is unable to enter the enclosure 126.
[0152] In one example, respective portions of the first and second laminates 119a and 119b can be sealed to each other so as to partially define the enclosure 126. The substrate 20 can then be placed in the internal space 124 prior to forming the enclosure 126 such that the inner surface 97 faces one of the first and second inner layers 122a and 122b, and the outer surface 99 faces the other of the first and second inner layers 122a and 122b. Next, a vacuum is applied to the internal space 124 of the enclosure 126 to remove the air from the internal space 124, and the first and second laminates 119a and 119b can be sealed, for instance heat-sealed, to each other so as to define the enclosure 126 under vacuum. When the envelope 118 is placed under vacuum, the inner layers 122a and 122b can lay flat against respective ones of the inner and outer surfaces 97 and 99 of the substrate 20 can extend over the holes 26. Further, the first inner layer 122a and the second inner layer 122b can lie against any overfilled particles 62 that extend out with respect to one or both of the surfaces 97 and 99. [0153] Accordingly, referring now to Fig. 8C, the envelope 118 can be placed in a press 128 that is configured to apply sufficient external pressure to the envelope 118 that causes the envelope 118 to densify the particles 62 of the initially packed powder 63. For instance, the press 128 can be an isostatic press that applies an isostatic pressure to the laminate. Thus, the packing step 50 can be referred to as an isostatic packing step. The isostatic pressure can be applied to the outer sheets 120a and 122a, which in turn applies the isostatic pressure to the inner layers 122a and 122b. The isostatic pressure can be in the range of approximately 5000 pounds per square inch (PSI) to approximately 60,000 PSI. For instance, the isostatic pressure can be in the range of approximately 20,000 PSI to approximately 50,000 PSI. In one example, the isostatic pressure can be in the range of approximately 25,000 PSI to approximately 40,000 PSI.
[0154] The pressure of the isostatic press applied to the envelope 118 can drive the inner layers 122a and 122b to enter opposite ends of the holes 26 under the isostatic pressure, thereby further packing the particles 62 of the initially packed powder 63 achieved during the filling step 46 to a highly packed powder 77 whose particles 62 that are more tightly packed than the packed particles 62. Thus, it can be said that the pressure densifies the particles 62 in the hole 26. In particular, the isostatic pressure drives the inner layers 122a and 122b to densify the packed powder 63. It should be appreciated that when the initially packed powder is further packed into highly packed powder, the distance along the length of the hole 26 that is occupied by the particles of the highly packed powder decreases with respect to the distance that is occupied by the particles of the initially packed powder. That is, the particles can compress longitudinally in the hole.
[0155] The isostatic pressure can be applied at room temperature. In this regard, the isostatic press can be referred to as a cold isostatic press (CIP). Alternatively, the isostatic press can be configured as a warm isostatic press (WIP) that can configured to apply the isostatic press at a temperature that can be in a range from approximately 120 C to approximately 250 C for a time period sufficient to cause the particles 62 to deform and further densify.
[0156] Without being bound by theory, it is believed that the inner layers 122a and 122b can cause the outer ends of the initially packed powder 63 to densify more than the intermediate portion of the initially packed powder 63 that extends between the outer ends. Further, referring also to Fig. 6B, the inner layers 122a and 122b can drive the initially packed powder 63 of the first filling step 46 to move in the hole 26 toward the center of the hole 26. Thus, initially packed powder 63 can be driven to substantially the center of the hole 26 with respect to the overall length of the hole 26 as illustrated in Fig. 6B. Subsequent pressing steps of subsequent fills can drive the resulting subsequent packed powder 79 against the powder that was drawn into the hole 26 during a previous filling step 46, also referred to as prior powder.
The prior powder can be defined by one or both of the first filling step 46 and, if desired, a first pressing step 50. Alternatively, the prior powder can be defined by one or both of a subsequent filling step 46 and, if desired, a subsequent pressing step 50.
[0157] In one example, the inner layers 122a and 122b can apply substantially equal amounts of pressure to each end of the holes 26 as they extend into opposed ends of the hole 26. Accordingly, the initially packed powder 63 that is disposed off-center with respect to the length of the hole 26 can be contacted by the respective one of the inner layers 122a and 122b, driven toward the center of the hole 26, and pressed between the inner layers 122a and 122b.
Subsequent initially packed powders are pressed against previously pressed highly packed powders. Thus, one of the inner layers 122a and 122b contacts the outer end of a previously pressed highly packed powder, and the other of the inner layers 122a and 122b contacts the outer end of the subsequent initially packed powder, thereby highly packing the subsequent initially packed powder into highly packed powder. As the initially packed powders are packed longitudinally by the inner layers 122a and 122b, it should be appreciated that the initially packed powders can expand radially as they are packed into highly packed powders, thereby compressing the respective particles 62 against the inner wall of the substrate 20 that defines the hole 26.
[0158] The inner layers 122a and 122b can be made of any suitable material as desired. In one example, the inner layers 122a and 122b can be made of a viscoelastic material and thus configured to enter the holes 26 so as to compress the particles 62 disposed therein. For instance, the inner layers 122a and 122b can distribute the isostatic pressure uniformly across the substrate and conformly, such that the inner layers 122a and 122b conform to the outer surfaces of the substrate 20 and extend into the holes 26. Thus, the inner layers 122a and 122b can mechanically pack the initially packed powder 63 into a highly packed powder. It is therefore desirable that the inner layers 122a and 122b are made from a material that does not adhere to the particles 62, such that when the isostatic pressure is removed, the inner layers 122a and 122b can be removed from the holes 26 without pulling the particles 62 out of the holes 26. In one example, the inner layers 122a and 122b can be made of Mylar. In another example, the inner layers 122a and 122b can be made of Teflon. The outer layers sheets 120a and 120b can be made of any suitable nonporous material. For instance, the outer sheets 120a and 120b can be made of a flexible metal such as aluminum. [0159] In one example, the outer sheets 120a and 120b can include a fusion material 121 such as mylar coated to their respective inner surfaces if desired . The fusion material 121 can fuse to itself to create the vacuum enclosure 126. The inner layers 122a and 122b can be separate from the outer sheets 120a and 120b, and placed between the outer sheets and the substrate 20. Alternatively, the inner layers 122a and 122b can line the outer sheets 120a and 120b as desired.
[0160] It should therefore be appreciated that the vacuum in the enclosure 126 is sufficient so as to cause the inner layers 122a and 122b to lay flat against the inner and outer surfaces 97 and 99 alone or in combination with the overfill. Accordingly, it will be recognized that any suitable apparatus that causes the inner layers 122a and 122b to lay flat against the inner and outer surfaces 97 and 99, alone or in combination with the overfill, prior to applying the isostatic pressure to the inner layers 122a and 122b either directly, or indirectly through the outer layers, uniformly and conformly as described herein is contemplated. The inner layers can therefore be referred to as packing members that are configured to be driven into the holes 26 of the substrate 20 so as to highly pack the initially packed powder 63 into highly packed powders disposed therein.
[0161] Referring now to Figs. 3 and 6B, the step of increasing the packing density 50 is completed once the isostatic pressure has been removed from the packing members. Once the step of increasing the packing density has been completed, a first filling and packing sequence has likewise been completed. It is appreciated, however, that in certain examples, the packing step 50 can be omitted. Instead, a step of hard pressing the substrate 20 to pack the particles 62 can be performed at step 53 as described in more detail below. Still in other examples, both steps 50 and 53 can be performed during the method 40. Further, it should be appreciated that the step of isostatically pressing the particles 62 can be performed at a plurality of instances between a plurality of sequential iterations, respectively, of filling the holes.
[0162] Referring to Figs. 6B-7C, it is recognized that the particles 62 after the first fill step 46, and optionally after the first packing step 50, can define a bulk fill that extends along only a portion of the hole 26 in some examples. In other examples, the bulk fill can extend along a substantial entirety of the hole 26. When the bulk fill extends along only a portion of the hole, the particles 62 can occupy a length of the hole 26 that is less than an entirety of the length of the hole 26, thereby defining longitudinal distances that are measured from the bulk fill to each of the first and second surfaces 22 and 24 of the substrate 20. If each of the distances is greater than a predetermined distance, then a subsequent sequence 55 is performed to fill the hole 26 with additional bulk fill until the distances reach the predetermined distance. If each of the distances is less than or equal to the predetermined distance, a final fill can be introduced into the hole 26 from the bulk fill to the first and second ends, respectively, of the hole 26. The distances can be determined after a filling step 46 is performed. Alternatively, the distances can be determined after a packing step 50 is performed.
[0163] Alternatively still, it is recognized that the particles 62 of the bulk fill can extend from the first end of the hole 26 to the second end of the hole after the first packing step 50 in some examples. Accordingly, the bulk fill can extend from the first surface 22 of the substrate 20 to the second surface 24 of the substrate 20. For instance, the bulk fill can extend from the holes 26 beyond one or both of the first surface 22 and the second surface 24 of the substrate 20. Thus, a single filling step 46 can fill the holes 26 such that the electrically conductive particles 62 extend continuously through the holes and can extend from the hole beyond each of the first and second surfaces 22 and 24 of the substrate 20. As will be appreciated from the description below, the particles 62 can subsequently be compacted inside the holes 26, and against one or both of the first surface 22 and the second surface 24 during the hard-pressing step 53 described in more detail below.
[0164] In one example, the predetermined distance can be in the range from approximately 1 micron to approximately 30 microns. In one example, the range can be from approximately 1 micron to approximately 20 microns. For example, the range can be from approximately 1 micron to approximately 10 microns. For instance, the range can be from approximately 2 microns to approximately 6 microns. In one example, the predetermined distance can range from approximately 0.5% of the total length of the hole 26 to approximately 25% of the total length of the hole 26. For instance, the range can be from approximately 0.5% of the total length of the hole 26 to approximately 20% of the total length of the hole 26. For instance, the range can be from approximately 0.5% of the total length of the hole 26 to approximately 15% of the total length of the hole 26. For instance, the range can be from approximately 0.5% of the total length of the hole 26 to approximately 10% of the total length of the hole 26. For instance, the range can be from approximately 0.5% of the total length of the hole 26 to approximately 5% of the total length of the hole 26. For instance, the range can be from approximately 1% of the total length of the hole 26 to approximately 4% of the total length of the hole 26.
[0165] When the distances have reached the predetermined size or range of sizes, at least one final sequence 53 of filling and pressing steps can be performed. Thus, the particles 62 that enter the hole 26 during the final filling step 46 of the final sequence 53 can be referred to as a final fill as illustrated in Fig. 9B. The final fill is intended to occupy a portion of the hole 26 that extends from the bulk fill to the first and second terminal ends of the hole 26. When the hole 26 is a through hole, the final fill is intended to extend from the bulk fill to each of the first and second surfaces 22 and 24 of the substrate 20. The particles 62 of the bulk fill can be defined by the first particles 62a that are configured and intended to extend along a majorit of the length of the hole 26. The particles 62 of the final fill can be defined by the second particles 62b, though it is appreciated that other sized particles are contemplated for the final fill. Thus, in one example, the hole 26 can be filled with both the bulk fill and the final fill.
[0166] As illustrated in Fig. 9A, when each of the distances is greater than the predetermined distance, a subsequent filling step 46 is performed in the manner descried above so as to produce initially packed powder 63 from a subsequent fill 67 of the subsequent filling step 46. The subsequent filling step 46 can be a bulk filling step. The subsequent pressing step 50, if performed, can produce highly packed powder 77 from the subsequent fill 67 as shown in Fig. 9B. The highly packed powder can be more packed than after the first filling step, and optionally the first packing step 50. Thus, as described above with reference to the first filling step, the subsequent filling step begins at step 46 whereby a subsequent filling step 46 is performed in the manner described above with respect to the first filling step, as illustrated at Fig. 9A. In particular, the inner surface 97 of the substrate 20 is placed against the filter media 100 in the manned described above.
[0167] Referring to Fig. 9A, the highly packed powder 77 of the first fill 65 can provide a plug 95 that allows air and liquid medium 64 to pass through, but does not allow the first particles 62a to pass through. In particular, when the particles 62 in the hole 26 define the monomodal distribution 70 described above, the particles 62 define the interstices 66.
Alternatively, when the particles 62 of the first fill 65 define the bimodal distribution 72, then the particles 62 can define the first and second bimodal interstices 66 and 75, respectively, as described above. Alternatively still, when the particles 62 of the first fill 65 define the trimodal distribution 73, then the particles can define the first, second, and third trimodal interstices 66,
75, and 69, respectively, as described above. It is recognized in certain examples that the interstices of the first fill 65 can be sized smaller than the first particles 62a. Accordingly, the plug 95 can be said to define an internal filter in the hole 26 that is nonporous with respect to the first particles 62a. The plug 95 can be defined by highly packed powder 77, or can be defined by the first particles 62a that were drawn into the hole 26 during the first filling step 46. The interstices of the internal filter are large enough so as to be porous with respect to fluid and air. Accordingly, it is contemplated that the particles 62 that flow into the hole 26 in a subsequent filling step 46 be prevented by the internal filter defined by the first particles 62a from traveling through the hole 26 to the filter media 100 that underlies the substrate 20. However, it may still be desirable to include the filter media 100 as a barrier to protect the support member 108 (see Fig. 5) from stray particles that may nevertheless flow through the hole 26. The filter media 100 of the subsequent packing step may, in some example, be more coarse than the filter media 100 of the first packing step.
[0168] It should be appreciated, referring now to Fig. 9A, that the inner surface 97 of the substrate during a first subsequent filling step 46 can be defined by the same one of the first and second surfaces 22 and 24 that defined the inner surface 97 during an immediately preceding filling step, which can be the first filling step as shown, or alternatively a subsequent filling step. Similarly, the outer surface 99 can be defined by the same one of the first and second surfaces 22 and 24 that defined the outer surface 99 during the immediately preceding filling step.
Alternatively, the substrate 20 can be flipped with respect to the immediately preceding filling step, such that the inner surface 97 is defined by the other one of the first and second surfaces 22 and 24. Similarly, the substrate 20 can be flipped with respect to the immediately preceding filling step, such that the outer surface 99 is defined by the other one of the first and second surfaces 22 and 24.
[0169] Accordingly, during the first subsequent filling step, the vacuum pressure can cause the suspension 60 to flow into the same one of the first and second ends of the hole 26 as the immediately preceding filling step. Alternatively, the substrate 20 can be flipped such that the vacuum pressure causes the suspension 60 to flow into the opposite one of the first and second ends of the hole 26.
[0170] As illustrated in Fig. 9A, the first subsequent filling step 46 can be performed such that subsequently packed powder 79 of the subsequent fill 67 of the first subsequent filling step 46 overfills the hole 26. That is, the particles 62 of the subsequently packed powder 79 extend beyond the hole 26 past the respective one of the first and second surfaces 22 and 24. It is recognized, however, that the subsequent packing step 50, if performed, packs the subsequently packed powder 79 into subsequently highly packed powder. Thus, the distance along the length of the hole 26 that is occupied by the subsequently highly packed powder decreases with respect to the distance that is occupied by the particles 62 of the subsequently packed powder 79 after the subsequent filling step 46 but before the subsequent packing step 50. That is, the particles 62 can compress longitudinally during the subsequent packing step 50, if performed. Accordingly, even when the particles 62 are overfilled (meaning extending beyond one or both of the first and second surfaces 22 and 24) prior to packing, it is recognized that the subsequently highly packed powder defined by the subsequent fill 67 after the subsequent packing step 50 can be recessed with respect to the respective outer surface of the substrate 20 as shown in Fig. 9B, thereby defining the distance described above.
[0171] Once the first subsequent filling step 46 has been performed at one end of the hole 26 as illustrated in Fig. 9A so as to define the subsequently packed powder 79, the subsequent packed powder 67 can be subsequently packed at step 50 into highly packed powder 77 as shown in Fig. 9B if desired. Thus, the electrically conductive material can include regions of highly packed powder 77 that are spaced from each other along the hole, and along the resulting via. Alternatively, the packing step 50 can be omitted, such that the particles 62 that extend at least to (and potentially past) the one end of the hole 26 can remain as subsequently packed powder 79 without being highly packed. Next, as shown at Fig. 9B, the substrate 20 can be flipped with respect to Fig. 9A, and a second or opposite subsequent filling step 46 can be performed at the opposite end of the hole 26 so as to define a second or opposite subsequently packed powder 81 that extends to, and potentially past, the opposite end of the hole 26. Next, if desired, an opposite subsequent packing step 50 can be performed to pack the opposite subsequently packed powder 81 into highly packed powder 77 if desired. Thus, the first or initially packed powder 63 of the first fill 65 can be disposed between the subsequently packed powder 79 and the opposite subsequently packed powder 81. Any one or more up to all of the first or initially packed powder 63, the subsequently packed powder 79, and the opposite subsequently packed powder 81 can define highly packed powder 77 if desired. As illustrated in Fig. 9C, the particles 62 of the first fill 65 and the subsequent fills 67 can combine to define bulk fill 130.
[0172] Referring now to Figs, 9C and 12A, when the distances described above are within the predetermined distance, a final filling step 46 can be performed at each end of the hole 26. The final filling step 46 can use the second suspension 60b as desired. Thus, the particles 62b of the second suspension 60b can be referred to as a final fill. Alternatively, the first suspension 60a can be used for the final filling step 46. Thus, while the final filling step 46 is described below in connection with the second suspension 60b, the description can apply equally to the first suspension 60a. The final filling step 46 can be performed after the first filling step 46, or after one or more subsequent filling steps 46. Alternatively still, if the first filling step 46 causes the particles 62 to extend beyond the first and second surfaces 22 and 24 of the substrate 20 and the packing step 50 is omitted, the final filling step 46 can be omitted.
[0173] The suspension 60 used during the final fill steps can be defined by the second suspension 60b or any suitable alternative suspension as desired, to produce a finally packed powder 132. During the first final filling step 46, a first final suspension 60 can be filled at one end of the hole 26. During a second or opposite final filling step 46, a second or opposite suspension 60 can be filled at the opposite end of the hole 26. The first final suspension 60 can be defined by the second suspension 60b or, alternatively, the first suspension 60a as described above. The first final suspension 60 can be overfilled so as to extend out of the hole 26 past the outer surface 99 of the substrate 20, which can be defined by the first outer surface 22 or the second outer surface 24. A first final packing step 50 can then be applied to the first final suspension 60 if desired to pack the finally packed powder 132 to highly packed powder 77 of the final fill 134, as illustrated in Fig. 12B. In this regard, it is appreciated that the highly packed powder 77 of the final fill 134 can be overfilled with respect to the hole 26.
[0174] Next, the substrate 20 can be flipped and the second or opposite final filling step can fill the opposite end of the hole with a second final suspension so as to produce an opposite finally packed powder at the opposite end of the hole 26. The second final suspension can be packed at step 50 to produce highly packed powder of the final fill 134 shown in Fig. 12B that is substantially planar and/or substantially flush with the first and second surfaces 22 and 24. The term“substantially“ in the context of planar and flush with the first and second surfaces 22 and 24 recognize that minor vanations can exist from perfect planarity and perfectly flush, but would be understood by a skilled artisan as flush for the purposes of future patterning and subsequent use. Alternatively, as descnbed above, the packing step 50 can be omitted. Alternatively, if the first final fill is not packed at the packing step 50, the packing step 50 can be performed after the second or opposite final filling step 46 so as to produce highly packed powder from the finally packed powder of both the first and second final filling steps 46. The opposite packed powder 77 of the final fill can likewise be overfilled with respect to the hole 26 after the final filling step 46.
[0175] It is recognized that the packed bulk fill 130 and the packed final fill 134, whether packed at step 50 or not, can combine so as to define the fill 35 of the via 34. Thus, the fill 35 can be said to be defined by the electrically conductive material.
[0176] It is recognized that the density of particles 62 in the hole 26 of the highly packed powder 77 of the first fill 65 is greater than the density of particles 62 in the hole of the initially packed powder 63. I It is recognized that the density of particles 62 in the hole 26 of the highly packed powder 77, if applicable, of the first fill 65 is greater than the density of particles 62 in the hole of the initially packed powder 63 of the first fill 65. It is further recognized that the density of particles 62 in the hole 26 of the highly packed powder 77, if applicable, of the subsequent fills 67 is greater than the density of particles 62 in the hole of the subsequently packed powder 63. Similarly, it is recognized that the density of particles 62 in the hole 26 of the highly packed powder 77 of the final fills 134, if applicable, is greater than the density of particles 62 in the hole of the finally packed powder 132. t is further recognized that the density of particles 62 in the hole 26 of the highly packed powder 77 of the subsequent fills 67 is greater than the density of particles 62 in the hole of the subsequently packed powder 63. Similarly, It is recognized that the density of particles 62 in the hole 26 of the highly packed powder 77 of the final fills 134 is greater than the density of particles 62 in the hole of the finally packed powder 132.
[0177] Referring now to Fig. 10, it is recognized that the subsequent filling steps 46 can be performed by subsequently filling one side of the hole with particles 62, flipping the substrate 20, and subsequently filling the opposite side of the hole with particles without packing the particles at step 50 after the first subsequent filling step 46. Then the packing step 50, if performed, can pack the first and second subsequently filled particles 62 at both ends of the hole 26 simultaneously.
[0178] In this regard, the vacuum apparatus 84 can define a suspended vacuum apparatus 85. In particular, the suspended vacuum apparatus can be constructed as described above with respect to the vacuum apparatus 84 of Fig. 5. However, the gasket 94 of the suspended vacuum apparatus 85 can extend across an interface between the shelf 96 and the support member 108. The gasket 94 can be spaced from the outer surface of the support member 108. Thus, the substrate 20 can be placed onto the outer surface of gasket 94. Accordingly, the region of alignment of the substrate 20 that defines the holes 26 can be suspended over the support member 108. Thus, an air gap 136 can be defined between the substrate 20 and the support member 108. In particular, the substrate 20 and the support member 108 can be spaced from each other along the same direction as the elongation of the holes 26.
[0179] The gap 136 can be sufficient to accommodate the overfill of the powder particles 62 that can be produced during the final filling step 46, such that the overfill that faces the support structure 108 does not contact the support structure 108. As discussed above, when the liquid medium 64 has evacuated the hole, the remaining particles 62 can be referred to as a dry packed powder. Further, because the surface charge of the particles 62 is no longer neutralized by the liquid medium 64, the particles 62 can agglomerate to each other. Thus, the agglomerated particles do not fall out of the hole 26 and into the gap 136 prior to being packed into highly packed powder. If desired, the filter media 100 can be placed over the support member 108 so as to protect the support member 108 from any stray particles 62 that escape through the hole 26 during the filling step 46. The filter media 100 can extend across the support member 108 and into the interface between the gasket 94 and the support member 108 as desired.
During operation, referring to Fig. 11, at least one gasket seals a first interface 102 between substrate 20 and the support member 108, or alternatively between the substrate 20 and the filter media, with respect to airflow therebetw een. The at least one gasket can further seal a second interface between the support member 108 and the shelf 96 with respect to airflow therebetween. The gasket 94 can support the perimeter of the substrate 20 at the exclusion zone described above. Further, portions of the gasket 94 or other auxiliary support member can extend between the support member 108 and the substrate 20 so as to support a middle region of the substrate 20, which is likely to experience elevated forces from the applied negative pressure.
[0180] The suspension 60 is applied to the outer surface 99 of the substrate 20 until the respective end of the hole 26 is filled with particles as described above. The liquid medium 64 is evacuated from the hole 26 in the manner descried above. Next, the substrate is flipped such that the previously inner surface 97 now defines the outer surface 99, and the suspension is again applied to the outer surface 99, and the respective hole is filled with particles. If the subsequent fill process is a bulk fill process, then both the first and opposite subsequently packed powders can be filled without performing the packing step 50 between the steps of filling the first subsequently packed powder and filling the opposite subsequently packed powder. Next, the substrate 20 can be packed at step 50 in the manner described above, if desired. The packing step 50 can cause both the first subsequently packed powder and the opposite subsequently packed powder to be packed into respective highly packed powders. Alternatively, the packing step 50 of the subsequent fill process can be omitted. Alternatively still, if the subsequent fill process is a final fill process, then both the first and opposite finally packed powders 132 can be filled without performing the packing step 50 between the steps of filling the first finally packed powder and filling the opposite finally powder. After the final filling step 46, the substrate 20 can be packed at step 50 in the manner described above, which causes the both the first finally packed powder and the opposite finally packed powder to be packed into respective highly packed powders 77 as illustrated at Fig. 12A.
[0181] It is therefore recognized that the suspended vacuum apparatus 85 can be used to fill the holes 26 with both the first and second or opposite subsequently packed powders prior to packing the particles 62 at step 50. If the packing step 50 is performed, both the first and opposite subsequently packed powders can be packed into highly packed powders
simultaneously during step 50. Alternatively, as described above, the packing step 50 can be omitted. Alternatively or additionally, it is envisioned that the suspended vacuum apparatus 85 can be used to fill the holes 26 with first and opposite finally packed powders prior to performing the final packing step 50. The final packing step 50 can pack both the first and opposite finally packed powders into highly packed powders simultaneously. Alternatively, as described above, the final packing step 50 can be omitted.
[0182] For instance, referring to Fig. 12C, the packing step 50 can be omitted after the final filling step 46 has been completed. When the packing step 50 is omitted from the method 40, the particles 62 in the hole 26 can extend from the first surface 22 to the second surface 24.
In some examples, the particles 62 can extend beyond the first and second surfaces 22 and 24 after the one or more filling steps 46 have been completed. Further, the particles 62 can be devoid of areas of highly packed powder 77 in the holes 26 after completion of the one or more filling steps, and when the sintering step 52 (see Fig. 3) is to be performed.
[0183] Referring now to Fig. 19A, while the filling step 46 has been described as inducing air pressure to drive the suspension 60 into the holes in examples described above, it is recognized that the filling step 46 can be performed in accordance with a number of other examples. For instance, a centnfuge 150 can provide the force that drives or draws the suspension 60 into the holes 26. In one example, the holes 26 can be through holes of the type described above. Thus, the force that urges the particles 62 to flow into the holes 26 can be a centrifugal force. The centrifuge 150 can include a rotatable hub 152, at least one bucket 156 such as a plurality of buckets 156, and arms 154 that extend between the hub 152 and the buckets 156.
[0184] As illustrated in Fig. 19B, the substrate 20 can be placed in the bucket 156, such that the substrate 20 is supported by a distal wall 158 of the bucket 156. Thus, the inner surface 97 of the substrate 20 faces the distal wall 158 of the bucket 156, and the outer surface 99 of the substrate 20 faces away from the distal wall 158. The inner surface 97 can be defined by one of the first and second surfaces 22 and 24. The outer surface 99 can be defined by the other of the first and second surfaces 22 and 24. The inner surface 97 can be placed against a corresponding support surface 157 of the distal wall 158 inside the bucket 156. The support surface 157 of the bucket 156 can be planar and made of a suitable material that will allow the substrate 20 to be subsequently removed from the inner surface 157 without causing pull out of the particles disposed in the holes. Alternatively, an auxiliary support member 160 can be placed in the bucket 156 between the substrate 20 and the inner surface 157. The support member 160 can define a support surface, such that the inner surface 97 of the substrate 20 is placed against the support surface. The support member 160 can be made of any suitable material, such as glass which can be coated to prevent the support member 160 from adhering to the particles of the substrate 20 as desired. The inner surface 157 or the support member 160 can seal the inner surface 97 of the substrate 20 in order to prevent evacuation of the particles 62 out of the holes 26 at the interface between inner surface 97 of the substrate 20 and the support surface. In some examples, it is recognized that the hole can be a blind hole as opposed to a through-hole. Thus, the centrifuge 150 can cause particles to flow into the blind hole through the open end of the blind hole so as to fill the blind hole in the manner described herein with respect to the through- hole.
[0185] As illustrated in Fig. 19B, the suspension 60 can then be applied to the outer surface 99 of the substrate 20 in the bucket 156 such that the suspension covers at least a portion of the outer surface 99. As described above, the suspension 60 can be sonicated or otherwise agitated so as to disperse the particles 62 in the liquid medium prior to applying the suspension to the substrates 20 in the bucket 156.
[0186] The bucket 156 can be oriented in a first orientation such that that the inner surface 157 can be oriented substantially horizontally, such that the suspension 60 does not slide off the outer surface of the substrate or otherwise pour out of the bucket. Next, referring to Fig. 19C, the buckets 156 can be pivotally attached to the arms 154. Thus, as the buckets 156 revolve around the hub 152, the buckets 156 can pivot from the first orientation to a second orientation whereby the inner surface 157 is oriented substantially vertically, or substantially perpendicular to the first orientation. The centrifuge 150 can cause the buckets 156 to revolve about the hub 152 at any suitable speed as desired. For instance, the centrifuge 150 can rotate at a speed that applies any suitable G-force as desired to drive the particles 62 into the holes 26. For instance, the g-force can be between approximately 100 and approximately 15,000 Gs. In one example, the g-force can be approximately 6,000 Gs. [0187] As illustrated in Fig. 19D, it is recognized that the specific gravity of the particles 62 is significantly higher than that if the liquid medium 64. As a result, the centrifugal forces applied to the suspension 60 causes the particles 62 to displace the liquid medium 64 from the holes 26 and flow into the holes 26. The particles 62 in the holes 26 pack against each other under the centrifugal forces, thereby creating a packed powder 162. However, because the liquid medium 64 remains in the interstices between the particles of the packed powder 162, the packed powder 162 can be referred to as a wet packed powder. After the centrifuge operation is completed a volume of residual liquid medium 64 can remain on the outer surface 99 of the substrate 20. As illustrated in Fig. 19D, the solid content of the suspension 60 can be greater than the volume of solids that fill the holes 26, such that the residual liquid medium 64 can include a quantity of the particles 62. However, the concentration of particles 62 in the residual liquid medium 64 outside the substrate 20 after the fill operating is less than the particle concentration of the suspension 60 prior to operating the centrifuge 150. Alternatively, the particle content of the suspension 60 can be calculated to fill the holes 26 during the centrifuge operation such that substantially no particles 62 remain in the residual liquid medium 64. Once the holes 26 have been filled with the packed powder 162, the centrifuge operation is discontinued, and the residual liquid medium can be desiccated off the substrate 20 or otherwise removed from the substrate 20.
[0188] The liquid medium 64 disposed in the holes 26 can then be removed. For instance, the substrate 20 can then be placed in any suitably warm environment to cause the liquid medium to evaporate. Alternatively or additionally, air can be forced through the holes 26 so as to remove the liquid medium from the holes 26. It should be appreciated that in one example, when the filling process is performed with the centrifuge 150, the filling process 46 can be brushless. That is, the method 40 can omit any step of brushing or otherwise bringing any structure along the outer surface of the substrate 20 so as to forcibly removing excess electrically conductive material from the outer surface 99 of the substrate 20 after the filling step 46.
Alternatively or additionally, referring to Fig. 9E, before or after the liquid medium 64 has been removed from the holes 26, a screed step can be performed to remove the residual liquid 64 from the outer surface 99 of the substrate 20. For instance, any suitable wand 103 can be driven across the outer surface 99 of the substrate 20 to remove the residual liquid 64 containing particles 62. The wand 103 can be made of any material as desired that will not pull the electrically conductive particles out of the holes 26. For instance, a Teflon wand may be particularly suitable. Alternatively, if the residual liquid medium 64 is devoid of particles 62, the residual liquid medium 64 can be removed in the manner described above without using the wand 103.
[0189] After the filling step 46 has been performed with the centrifuge, the packing step 50 can be performed. In one example, the packing step 50 can be performed after removing the residual liquid medium 64 and particles 62 from the outer surface 99 of the substrate 20. In particular, the substrate 20 can be placed inside the envelope 118, and the air can be removed from the envelope 118 in the manner described above with respect to Figs. 8A-8B, and the substrate 20 can be pressed in the press 128 as described above with respect to Fig. 8C. The packing step 50 can further pack the particles 62 in the holes 26, thereby creating a bulk fill of dry highly packed powder as described above.
[0190] Alternatively, the packing step 50 can be performed without first removing the residual liquid medium and particles 62 from the outer surface 99. Without being bound by theory, it is believed that if the residual liquid medium 64 and particles 62 are not first removed, a majority or a substantial entirety of the residual liquid medium 64 and particles 62 can be removed from the substrate by adherence to the inner layers 122a and 122b when the substrate 20 is removed from the enclosure after completion of the packing step 50. Alternatively, as described above, the packing step 50 can be omitted after the filling step 46 has been performed with the centrifuge.
[0191] In one example, after the filling step 46 using the centrifuge, it is recognized that the resulting bulk fill of particles 62 can extend along an entirety of the length of the hole 26 from the first end of the hole to the second end of the hole 26. Further, the particles 62 can extend beyond one or both of the first and second surfaces 22 and 24 of the substrate 20. For instance, one or both of the inner surface 97 and surface of the support member 160 that faces the inner surface 97 can be precoated with the suspension 60 prior to performing the step of filling 46 under centrifugal forces, thereby creating the overfill at the inner surface 97.
Alternatively still, a stand-off member can be disposed between the support member 160 and the inner surface 97 prior to performing the step of filling 46 under centrifugal forces. The stand-off member can define a gap between the inner surface 9 and the support member 160. Thus, the particles can be forced under centrifugal forces to a location between the inner surface 97 and the support member 160. Thus, a single filling step 46 can fill the holes 26 such that the electrically conductive particles 62 extend continuously through the holes and can extend beyond each of the first and second surfaces 22 and 24 of the substrate 20. [0192] Alternatively or additionally, the substrate 20 can be flipped such that what was the inner surface 97 is now the outer surface 99, and what was the outer surface 99 is now the inner surface 97. The filling step 46 under centrifugal forces can then be repeated as a subsequent filling step under centrifugal forces. Thus, where the centrifugal forces 150 urged particles into the holes 26 from the first surface 22 in the first filing step, the centrifugal forces can now urge particles into the holes 26 from the second surface 24 during the subsequent filling step under centrifugal forces.
[0193] After the one or more filling steps 46 under centrifugal forces have been completed, the particles 62 can subsequently be compacted inside the holes 26 and against one or both of the first surface 22 and the second surface 24 during the hard pressing step 53 described in more detail below.
[0194] If the packing step 50 is performed, the resulting highly packed powder can occupy a length of the hole 26 that is less than an entirety of the length of the hole, thereby defining longitudinal distances that are measured from the bulk fill to each of the first and second surfaces 22 and 24 of the substrate 26, as described above. If the distances are greater than the predetermined distance as described above, then at least one subsequent bulk filling step 46 can be described of the type described above, using one or more of the vacuum apparatus 84, the suspended vacuum apparatus 85, and the centrifuge as desired. It should be appreciated that filling the holes with first and opposite subsequently packed powder with one or both of the vacuum apparatus 84 and the centrifuge 150 includes filling the first subsequently packed powder at step 46. Next another subsequent sequence 55 includes filling the opposite subsequently packed powder at step 46. Alternatively, as described above, the suspended vacuum apparatus 85 can be used to fill the first and opposite powders in sequence. The packing step 50 can be performed after one or more up to all of the filling steps 46 as desired.
Alternatively, the packing step 50 can be omitted. Once each of the distances are equal to or less than the predetermined distance, a final filling step 46 of the type described above is performed.
[0195] Referring now to Figs. 20A-20F, the filling step 46 can be performed by applying electrostatic forces to the particles 62 that drive the particles 62 to flow into the holes 26. In particular, an electrostatic fill device 200 is configured to apply the electrostatic force to the suspension 60 that drives the particles to flow into the holes 26.
[0196] As illustrated in Fig. 20A, a region of the substrate 20 can be ablated, such as laser ablated, so as to define a weakened region 202 that can be subsequently removed at a later step so as to define the hole. As illustrated in Fig. 20B, an electrically conductive layer 204 can be applied to the inner surface 97 of the substrate 20. For instance, the layer 204 can be a metallic layer. In one example, the metallic layer can be sputtered onto the inner surface 97 of the substrate 20. Next, as illustrated at Fig. 20C, a non-reactive mask 206 is applied to the electrically conductive layer 204. For instance, the non-reactive mask 206 can be a photoresist or other suitable material. Next, the ablated region can be etched so as to produce the hole 26.
In this regard, while the hole is shown conically tapered, it should be appreciated that all holes 26 described herein, and thus the resulting vias 34, can be shaped in any manner as desired. For instance, the holes 26 can be substantially cylindrical. Alternatively, the holes 26 can be conical. For instance, the holes can taper inwardly from the outer surface 99 to the inner surface 97. Alternatively, the holes can taper outwardly from the outer surface 99 to the inner surface 97.
The holes 26 can define any suitable alternative shape as desired. It should be further appreciated that the substrate 20 as described in all examples herein can be fabricated in accordance with any suitable available method, including laser ablation and subsequent etching to form the holes 26.
[0197] As illustrated in Fig. 20D, the suspension 60 can be applied to the outer surface 99 of the substrate 20 so as to cover at least a portion of the outer surface 99 as described above. The layer 204 can have an electrical charge that is opposite the electrical charge of the particles 62. For instance, the electrical charge of the particles 62 can be defined by the zeta potential described above. The layer 204 can have a surface charge. Alternatively, the layer 204 ca be electrically connected to an electrode that applies an electrical charge to the layer 204. In one example, the layer 204 can define a negative charge, the particles 62 can be positively charged. The liquid medium 64 can be any suitable liquid that does not neutralize the electrical surface charge of the particles 62 with respect to the attraction to the oppositely charged layer 204 that is external to the suspension 60. Alternatively, the particles 62 can be disposed in a paste.
Alternatively or additionally, an electrical charge can be applied to the particles opposite the electrical charge of the layer 204.
[0198] During operation, the layer 204 can electrostatically draw the particles 62 to flow into the hole 26, and displace the liquid medium 64 that is disposed in the hole 26. Thus, the particles 62 can define a wet packed powder of the type descried above. The hole 26 can then be allowed to dry. It is recognized that the force associated with the charge can fill an entire length of the hole 26 in one example, as illustrated in Fig. 20E. The charge can further pack the particles 62 inside the hole 26. In another example, the particles 62 can be packed in the manner described above with respect to packing step 50. Of course, as described above, the packing step 50 can be omited. It should be appreciated that the particles 62, including one or both of the first particles 62a and the second particles 62b, that are disposed in the holes 26 can contact an internal surface of the substrate 20 that extends from the first surface 22 to the second surface 24 so as to at least partially define the hole 26 after the filling step, whether the filling step is performed under a pressure differential, centrifugal forces, or electrostatic forces.
[0199] If the packing step 50 is performed, it should be appreciated that only one of the inner layers 122a and 122b (see Figs. 8A-8B) enters the hole 26 at the outer surface 99 of the substrate 20. The other one of the inner layers 122a and 122b can bear against the layer 204. Alternatively, the layer 204 can be removed, and the other one of the inner layers 122a and 122b can enter the hole 26 at the inner surface 97. Once the packing step 50 is completed, or if the packing step 50 is omited, a final filling step alone or in combination with one or more subsequent filling steps can be performed. The one or more subsequent filling steps and the final filling step, if performed, can be performed in the manner described herein. It should be appreciated that the layer 204 can define the sputter layer for a redistribution layer (RDL) as described in more detail below. Alternatively, as illustrated in Fig. 20F, the layer 204 can be removed. It is recognized that this method is intended to be used with a large number holes of the type commonly found on the substrate 20. The layer 204 can overly many or all of the holes 26 so as to draw the particles 62 into each of the holes 26 in the manner described herein.
[0200] As illustrated in Fig. 20G, a second electrical charge 205 can be adjacent at the outer surface 99 that is the same charge as the particles 62. Thus, the second electrical charge 205 can apply a force that drives the particles 62 along the outer surface 99. The particles 62 can be in suspension as described above. Alternatively, the particles 62 can be dry. For instance, the second electrical charge can be a positive charge that repels the suspension 60 away from the second charge. The second charge can be applied at a location outside the array of holes 26, such that the second charge drives the suspension 60 to flow across the outer surface 99 and into the holes 26 in the manner described above.
[0201] In another example, the layer 204 can be provided as a sacrificial oxide layer, and a carrier layer can be disposed over the oxide layer. A redistribution layer can be applied to the outer surface 99 surface of the substrate 20, and the oxide can then be etched so that a redistribution layer can be applied to the inner surface 99 of the substrate 20.
[0202] It is thus recognized that the particles 62 can be urged into the holes under a force from an air pressure differential, a centrifugal force, an electrostatic force, or a combination of the above. Further, it is recognized that one or more bulk fill operations can be performed. In some examples, a final fill operation can be performed after the one or more bulk fill operations. The particles during the final fill operation can have an average size that is smaller than the average size of the particles during the bulk fill operation. In one example, the filling step can include filling the hole at a first side of the substrate 20 that defines the first surface 22, flipping the substrate, and filling the hole at an opposed second side of the substrate the that defines the second surface 24. Alternatively, it is recognized that a first step of filling the substrate can include introducing the final fill into the hole at the first side of the substrate in accordance with any of the filling steps described herein such that the final fill accumulates at the second side of the substrate. Thus, the final fill can extend from the second surface of the substrate into the hole. Alternatively or additionally, a first final fill can extend from the hole onto the second surface in the manner described above, so as to define a button after the hard pressing step.
Next, the bulk fill can be introduced into the hole at the first side of the substrate in accordance with any of the filling steps described herein such that the bulk fill extends from the first final fill toward the first surface. Finally, a second final fill can be introduced into the hole at the first side of the substrate in accordance with any of the filling steps described herein such that the second final fill extends from the bulk fill to the first surface of the substrate. Alternatively or additionally, a first final fill can extend from the hole onto the second surface in the manner described above, so as to define a button after the hard pressing step.
[0203] Referring again to Fig. 3, once the filling step or steps 46 have been completed so as to fill the holes 26, alone or in combination with one or more packing steps 50, the particles 62 can be sintered at sintering step 52. It is appreciated that the particles 62 can be dry prior to the sintering step 52. In particular, referring now to Fig. 14, the substrate 20 can be placed in an oven 164 for a length of time at any suitable pressure at a temperature sufficient to sinter the particles 62. For instance, the pressure in the oven 164 can be at atmospheric pressure.
Alternatively, the oven 164 can define a vacuum. The oven can further include any suitable gaseous environment as desired. In one example, the sintering process is substantially a non- densification sintering process. It is recognized that densification during sintering can cause portions of adjacent ones of the particles 62 to flow toward each other, thereby shrinking the resulting electrically conductive fill 35.
[0204] Referring now to Figs. 15A-15B, it is recognized that deformation of the particles 62 can take place during the substantially non-densifying sintering step 52. However, the deformation is relatively minimal compared to densification sintering. For instance, the substantial non-densification is illustrated whereby in Fig. 15A, a plurality of adjacent particles 62 are in contact with each other and define respective geometric centers 159 that are spaced from each other a first distance D1. After the substantially non-densification sintering step, the geometric centers 159 of the two adjacent particles 62 define a second distance D2 between their respective geometric centers, as shown in Fig.15B. The difference between the second distance D2 and the first distance D1 is no more than approximately 30% of the first distance in one example. For instance, the difference is no more than approximately 20% of the first distance. For example, the difference is no more than approximately 15% of the first distance. In another example, the difference is no more than approximately 10% of the first distance. For instance, in one specific example, the difference is no more than approximately 5% of the first distance. In one particular example, the first distance D1 can be substantially equal to the second distance D2.
[0205] It is recognized that sintering includes an initial stage whereby a neck 145 is formed that extends between adjacent sintered particles, so as to define grain boundaries 149 at respective interfaces between adjacent sintered particles 62. It should be appreciated that the particles 62 can define what is referred to as a“bulk nanostructured” powder. Each of the particles 62 can include a packed array of nanograins. In one example, each particle 62 can include at least a thousand up to over a million nanograins. It is, however, contemplated, that the particles 62 can each include less than one-thousand nanograins, for instance when the average size of the particles is 0.22 µm. During the initial stage of sintering, the nanograins that make up the particles 62 can expand or grow. As this occurs, pores internal to the particles 62 can be moved to the outer surface of the particle 62 and removed. In a second or intermediate stage of sintering, interstices 66 between the adjacent particles 62 can shrink during densification of the particles 62. However, the densification of the particles 62 can be tuned by determining the average grain size in the originally synthesized particles 62 of the suspension 60 described above. The densification of the particles 62 can further be tuned by determining the modal distribution of particles 62. For instance, as described above with respect to Figs.7A-7C, the particles 62 can define a monomodal distribution, a bimodal distribution, or a trimodal distribution for example. It is appreciated that the modal distribution of the particles 62 does not effect the grain growth behavior of the nanograins in each of the particles 62. Rather, the multi- modal distribution can affect the densification behavior of particle to particle interaction, such as necking, during sintering.
[0206] It has been found that smaller sized nanograins produce greater nanograin growth during the first phase of densification. Greater nanograin growth in the first stage of densification has been found to result in less densification of the particles 62 during the second or intermediate stage of densification. Further, greater initial density of the electrically conductive particles 62 in the hole 26 prior to sintering can also produce less densification of the particles 62 during the second or intermediate stage of densification. It is recognized that trimodal distributions have a greater initial density than bimodal distributions. Further, bimodal distributions have a greater initial density than a monomodal distributions. Thus, a trimodal distribution of the particles has greater initial density than a monomodal distribution.
[0207] Accordingly, to decrease densification during the second or intermediate stage of sintering, it can be desirable to decrease the sizes of the nanograins that form the particles 62. Further, to decrease densification during the second or intermediate stage of sintering, it can be desirable to provide the particles in a bimodal or trimodal distribution. It is recognized, however, that the particles can be substantially non-densification sintered in a monomodal distribution.
[0208] Without being bound by theory, it is believed that decreasing the nanograin size alone or in combination with providing bimodal or trimodal particle distributions can decrease a transition point of total achievable densification between the intermediate stage of sintering and the final stage of sintering. Otherwise stated, the ability of the particles 62 to densify during the intermediate stage of sintering can be reduced such that the resulting sintered particles 62 are substantially non-densified. During the final stage of sintering, nanograins can further grow in addition to the growth achieved during the initial sintering phase, which can be a precursor to closure of pores within the particles 62. The end result after sintering is completed is a contiguous metal networked fill within the via that can extend from the first surface 22 to the second surface 24 without changing the coplanarity of the metallized via and the surrounding substrate 20 (see Fig.2A). Further, the contiguous metal networked fill can contact the substrate 20 at one or more up to all locations of in the via, at the first surface, and at the second surface 24. The contiguous metal networked fill can extend out from the via onto one or both of the first and second surfaces 22 and 24 of the substrate 20.
[0209] It should therefore be appreciated that a method of tuning densification of the particles 62 during the step 52 can include the step 46 of filling the hole with a bulk
nanostructured electrically conductive powder having particles that each include a packed array of nanograins. The method can further include the step 52 of sintering the particles in the hole at a temperature range for a time duration. The method can further include the step of determining at least one of an average grain size and a modal distribution prior to the filling step so as to, in turn, determine an amount of densification during the sintering step. As described above, the filling step can include filling the hole with a suspension of the particles in a liquid medium, and evacuating the liquid medium from the hole prior to the sintering step 52
[0210] As described above, a majority of the total volume of particles 62 in the hole 26 can be substantially non-densification sintered as described above. In one example, at least approximately 60% the total volume of particles 62 in the hole 26 is substantially non- densification sintered. In another example, at least approximately 70% of the total volume of particles 62 in the hole 26 is substantially non-densification sintered. In still another example, at least approximately 80% of the total volume of particles 62 in the hole 26 is substantially non- densification sintered. In yet another example, at least approximately 90% of the total volume of particles 62 in the hole 26 is substantially non-densification sintered. For instance, in one particular example, at least approximately 95% of the total volume of particles 62 in the hole 26 is substantially non-densification sintered. Particular. More particularly, in one example, approximately 100% of the total volume of particles 62 in the hole 26 is substantially non- densification sintered. It should be appreciated that at least a portion of the fill defined by the non-densification sintered particles 62 in the hole 26 can contact the internal surface of the substrate 20 that extends from the first surface 22 to the second surface 24 and at least partially defines the hole.
[0211] The sintering step 52 can occur at a sintering temperature within a temperature range from approximately 100 degrees Celsius to approximately 400 degrees Celsius. In one example, the temperature range can be from approximately 200 degrees Celsius to
approximately 400 degrees Celsius. For instance, the temperature range can be from
approximately 300 degrees Celsius to approximately 350 degrees Celsius. For instance, the sintering temperature can be approximately 325 degrees Celsius.
[0212] The sintering step 52 can occur for any suitable duration as desired within any of the temperature ranges identified above to sinter the particles 62 without substantially densifying the particles 62 as described above. For instance, the duration can be in a duration range from approximately 15 minutes to approximately 4 hours. In one example, the duration range can be from approximately 30 minutes to approximately 2 hours. For instance, the duration can be approximately 1 hour.
[0213] Advantageously, as discussed above, the particles 62 can be ductile and malleable. As a result, the particles 62 can have a coefficient of thermal expansion (CTE) that tis mismatched with respect to that of the substrate 20 without damaging the substrate 20 during sintering. In particular, the malleability of the silver particles 62, for instance, allow s for non- densification sintering while maintaining the structural integrity of the substrate. Thus, it is appreciated that no materials are added to either of the suspensions 60a and 60b that are intended to bring the coefficient of thermal expansion of the resulting particles 62 closer to that of the substrate 20. Accordingly, the sintered particles 62 is devoid of residual material that is the product of a burned CTE matching agent. For instance, each of the first and second suspensions 60 can be devoid of glass frit, or fritless can be Further, in examples whereby the electrically conductive material of the particles 62 is a metal, the resulting via 34 can define the single homogeneous metal from the first surface 22 of the substrate 20 to the second surface 24. For instance, the first and second particles 62a and 62b can be the same metal. In one example, the same metal can be silver. In another example, the same metal can be copper.
[0214] Alternatively or additionally, the sintering step 52 can include the step of applying a radiofrequency (RF) current to the particles 62 sufficient to generate eddy currents that cause the particles 62 to substantially non-densification sinter.
[0215] It is recognized that the resulting vias 34 contain substantially only the electrically conductive material and air as described above, in addition to any metal introduced into the hole, if applicable, during the sealing step as described above. Further, as will now be described, the resulting vias 34 can be hermetic.
[0216] In particular, referring again to Fig. 3, once the substrate 20 has been sintered at step 52, the particles 62 can be subjected to a hard pressing step. Referring to Figs. 21 A-21B, the hard pressing step can be performed in a hard press 140. In particular, the hard press 140 can include first and second press surfaces 142 that can be simultaneously brought into contact with the substrate 20, and pressed toward the first and second surfaces 22 and 24 of the substrate 20.
In particular, the first and second press surfaces 142 can be moved uniaxially toward each other, and toward the respective first and second surfaces 22 and 24. Thus, the pressing step can be referred to as a uniaxial pressing step. The press surfaces 142 can be brought into contact with the particles 62 that extend out from the first and second surfaces 22 and 24, also known as the overfilled particles 62. As the press surfaces 142 continue to be brought toward each other, and thus toward the substrate 20, the press surfaces 142 compress the overfilled particles 62 against the first and second surfaces 22 and 24, respectively. Thus, the particles 62 can define an I- Beam-shaped structure having a stem 144 that extends inside the hole 26 to the first and second surfaces 22 and 24, and outer bumpsl46 that are compressed against the first and second surfaces 22 and 24, respectively. The outer bumps 146 can be flat outer bumps 146 that are parallel with the respective first and second surfaces 22 and 24 of the substrate 20. Further, the bumps 146 can extend out with respect to the hole 26, and thus the via 34, along a direction that is perpendicular with respect to the hole 26, and thus the via 34.
[0217] It is recognized that the bumps 146 can be created without adding any additional layer to the substrate that artificially extend the holes 26, and thus the vias 34, beyond either or both of the first and second surfaces 22 and 24. For instance, the bumps 146 can be created without adding a sacrificial layer, such as a dry film resist, onto either or both of the first and second surfaces 22 and 24 of the substrate 20 so as to artificially extend the holes 26, and thus the vias 34, beyond either or both of the first and second surfaces 22 and 24. In that regard, the filling steps 46 can be performed without first adding a dry film resist onto the surfaces 22 and 24. Accordingly, no portion of the holes 26 or vias 34 is defined by a layer of resist that extends out from either of the first and second surfaces 22 and 24, in one example. Further, the holes 26, and thus the vias 34, can be filled with the particles 62 without depositing an electrically conductive layer onto the first and second surfaces 22 and 24, for instance, gold or titanium, in order to artificially extend the hole 26 beyond the first and second surfaces 22 and 24.
Accordingly, no portion of the holes is defined by a layer of titanium or gold that extends out from either of the first and second surfaces 22 and 24, in one example.
[0218] The compression of the flat outer bumps 146 against the first and second surfaces 22 and 24, respectively, can seal the ends of the vias 34 at both surfaces 22 and 24 of the substrate 20. Further, it should be appreciated that at least some of the non-densification sintered particles 62 can contact the substrate at one or both of the first and second surfaces 22 and 24. Thus, the vias 34 can be hermetic. Accordingly, the electrically conductive material of the sintered particles 62, and thus also of the via 34, can be nonporous at each of the first surface 22 and the second surface 24. Further, interference between the flat outer ends and the substrate 20 can resist or prevent migration of the electrically conductive fill 35 during operation. The press surfaces 142 can also apply a compressive force to at least some of the particles 62 inside the hole 26. Thus, at least some of the particles 62 can define highly packed powder, thereby densifying the powder. Accordingly, the method 40 can also include the step of non-sinter densifying the electrically conductive material in the hole 26. While the via described herein provides improved electrical performance, and without being bound by theory, it is believed that further densifying the electrically conductive material can further improve certain aspects of the electrical performance of the resulting via.
[0219] Each of the first and second hard planar press surfaces 142 can be defined by respective first and second press members 148. The press members 148 can be defined by glass or any suitable alternative having a suitable hardness to compress the particles 62 without undergoing deformation. Further, the press surfaces 142 can be planar before they contact the particles 62, as they compress the particles 62 against the substrate 20, and after the hard pressing step is completed. In particular, the planar press surfaces 142 can be parallel to the first and second surfaces 22 and 24, respectively, of the substrate 20. The press-members 148 can be disposed inside an envelope of the type described above with respect to Figs. 8A-8B. The envelope can be made of mylar or any suitable alternative material. The substrate 20 can be placed in the envelope between the opposed press members 148, such that the first surface 22 faces a first one of the press members, and the second surface 24 faces the other of the press members 148. The press members 148 can be drawn toward each other so as to press the particles 62 in the manner described above. The hard pressing step can be performed under a vacuum in the envelope, or can be performed under normal atmospheric pressure. Further, the hard pressing step can be a cold hard pressing step at room temperature, or a warm hard pressing step at a temperature greater than room temperature, such as from approximately 120 C to approximately 250 C. Further, the hard pressing step can be performed under vacuum.
Alternatively, the hard pressing step can be performed at atmospheric pressure.
[0220] It is recognized that the hard pressing step can be performed after the sintering step 52 as described above. Alternatively, it is contemplated that the hard pressing step can alternatively be performed prior to the sintering step 52. Further, the hard pressing step can be performed alone or in combination with one or more of the packing steps 50. Alternatively, the hard pressing step can be performed in the method 40 whereby no packing steps 50 are performed. Alternatively, the method 40 can include one or more packing steps 50 whereby no hard pressing steps are performed. When the method includes the hard pressing step but not the packing step 50, a portion of the fill 35 can include the same density of particles 62 as the particles 62 as filled during the filling step 46.
[0221] In some examples, the method 40 can include the step 54 of sealing the via. In one example, the sealing step can be performed by surface finishing the particles 62.
[0222] In particular, as illustrated at Fig. 16A-16B, the outwardly -facing surface of the sintered particles 62 at each of the first and second surfaces 22 and 24 can be pressed with a wand 166. The wand 166 can have a hardness greater than that of the electrically conductive material and less than that of the substrate. For instance, the hardness can be greater than silver and copper, and less than glass. Thus the wand 166 can cause the sintered particles 62 at each of the first and second surfaces 22 and 24 to change its shape without compromising the integrity of the substrate. In particular, the wand 166 can change the shape of the overfilled portion of the sintered particles at each of the first and second surfaces so as to seal the openings to the via at one or more interface between the electrically conductive material and the substrate 20. For instance, the interfaces can be disposed at the first and second surfaces 22 and 24, respectively, of the substrate. In one example, the wand 166 can be made of nickel. It is recognized that the sintered particles 62 at the first and surfaces 22 and 24 can be defined by the final fill as described above. Thus, it can be said that the final fill defines end caps 161 of the via 34.
Further, the end caps can hermetically seal the via.
[0223] The wand 166 can be pressed into the final fill and moved across the final fill so as to smear the particles along the outer surfaces of the glass prior to applying a plating and/or redistnbution layer. The smearing step can cause the interstices in the final fill to plug and become nonporous at the outer surface. The ductility of silver or copper final fill can be particularly suitable for this purpose. Further, the final fill can be pressed over the interface with the opening to the hole 26 at each of the first and second surfaces 22 and 24 of the substrate 22. In one example, the sealing step can be performed in a vacuum, such that both the substrate 20 and the wand 166 can be disposed in a vacuum environment during surface finishing of the electrically conductive material. It should be appreciated that the step of surface finishing the electrically conductive material can further level the electrically conductive material.
Alternatively or additionally, the sealing step can include the step of applying a vacuum deposition of electrically conductive material into the electrically conductive material at the ends of the via so as to one or both of 1) plug a plurality of the interstices, and 2) fill the openings at the interfaces between the electrically conductive material and the substrate 20. Alternatively or additionally, the sealing step can include vacuum melting of the electrically conductive material so as to one or both of 1) plug a plurality of the interstices, and 2) fill the openings at the interfaces between the electrically conductive material and the substrate 20.
[0224] The result is a hermetic via that can have a hermeticity less than approximately 10 7. For instance, the hermeticity can be less than approximately 10 8. For instance, the hermeticity can be less than approximately 10 9. For instance, the hermeticity can be less than approximately 10 10. For instance, the hermeticity can be less than approximately 10 11.
Alternatively, the smearing step can be skipped, and a plating can be applied and/or a redistribution layer can be applied without smearing the particles along the outer surfaces of the glass. [0225] However, it is recognized that the hard pressing step 53 and subsequent steps can replace the sealing step 54. Thus, the method 40 can include the hard pressing step 53 and omit the sealing step 54. Alternatively, the method 40 can include the sealing step 54 and omit the hard pressing step 53. Alternatively still, it is envisioned that the method can include both the sealing step 54 and the hard pressing step 53. The hard pressing step 53 can be performed prior to the sealing step 54. Alternatively, the hard pressing step 53 can be performed after the sealing step 54. As illustrated at Figs. 16A-16B, is appreciated that the sealing step 54 can seal the ends of the vias 34 at the first and second sides of the substrate that define the first and second surfaces 22 and 24, respectively. Thus, the vias 34 can be hermetic. Accordingly, the electrically conductive material of the sintered particles 62, and thus also of the via 34, can be nonporous at each of the first surface 22 and the second surface 24. In particular a wand can smear the particles along the outer surfaces of the glass.
[0226] Alternatively, as described above, the sealing step 54 can be omitted from the method 40. Alternatively, an electrically conductive conformal coating can be applied to the ends of the vias after the sintering step 52. In this regard, the conformal coating can be applied after the hard pressing step 53. Alternatively, the conformal coating can be applied prior to performing the hard pressing step 53. Alternatively still, the conformal coating can be applied when the method 40 does not include the hard pressing step 53. For instance, the conformal coating can be applied to the fill that is substantially planar with the surfaces 22 and 24 of the substrate 20. The conformal coating can be applied to the ends of the vias using any suitable deposition technique as desired. In one example, the conformal coating can be applied to the particles 62 of the final fill at the ends of the vias, if a final filling step was performed.
Alternatively, the conformal coating can be applied to the particles 62 of the bulk fill at the ends of the vias. In one example, the conformal coating can be electroplated to the particles 62. Alternatively, the conformal coating can be deposited through variations of such techniques as evaporation, PVD, or Chemical Vapor Deposition (CVD) such as atomic layer deposition (ALD). Alternatively still, the conformal coating can be applied in an electroless plating step. It is recognized that the conformal coating can occupy, and in some instances fill, the interstices that are defined between adjacent ones of the particles as described above.
[0227] Next, the ends of the vias can be further sealed to the first and second surfaces 22 and 24 of the substrate 20. For instance, the ends of the vias that are substantially planar and/or flush with the first and second surfaces 22 and 24 of the substrate can be sealed.
Alternatively, the flat outer ends or bumps 146 (see Fig. 21B) can be further sealed to the surfaces 22 and 24 of the substrate 20. In one example, the sealing step can take place under vacuum so as to prevent gaseous contaminants from entering the via. For instance, the sealing step can prevent gaseous contaminants from entering into the interstices between adjacent particles. Alternatively or additionally, the sealing step can prevent gaseous contaminants from entering into pores of the electrically conductive material.
[0228] Finally, a redistribution layer (RDL) can be applied to the substrate 20 as desired. For instance, referring now to Figs. 17-18B, the redistribution layer 37 can be applied to one or both of the first and second surfaces 22 and 24 of the substrate 20 so as to be in electrical communication with the via 34, and thus with the electrically conductive material in the via. For instance, a sputter layer can be applied, and electrically conductive metal plating can be applied over the sputter layer in the usual manner. As illustrated in Fig. 18A, alternatively a trench 170 can be formed a respective at least one of the first and second surfaces 22 and 24. It should be appreciated that the trench 170 can be open to the hole 26 and via. Accordingly, the methods such as vacuum, centrifugal force, and electrostatic force, for causing the particles to enter the hole can also be used to cause particles to enter the trench. The particles can be dried, packed, and sintered as described above to define the redistribution layer 37.
[0229] Referring again to Figs. 1A-4, the resulting via defines the electrically conductive material of the particles 62, which can be a metal, and voids defined by the interstices between adjacent particles in the solid material, which can also be referred to as air pores, that are defined by the interstices described above that have not been filled during method 40. The resulting via can further define the conformal coating if applied as descnbed above. The electrically conductive material of the particles 62 can define a scaffold matrix designed to have internal air voids or pores that are arranged along a majority of a length of the hole from the first surface 22 to the second surface 24. The sintered electrically conductive material defines an electrically conductive path from the first surface to the second surface. The air pores can define at least 25% of a total volume of the via up to 75% of the via in certain examples. However, it is appreciated that the air pores can define less than 25% of the total volume of the via in other examples. Further, the air pores can be substantially homogeneously arranged along the majority of the length of the via. The resulting via can define non-linear electrically conductive paths from the first surface 22 to the second surface 24. The web matrix can define at least one airflow path that extends from a first terminal end of the web matrix to the second terminal end of the web matrix. The first and second terminal ends can be defined by the nonporous end caps. [0230] Thus, the web matrix can include an electrically conductive material including sintered and surface finished particles that define a continuous electrically conducive interlinked network along a majority of a length of the hole 26 from the first surface 22 to the second surface 24, wherein the electrically conductive material is not fused with the substrate in the hole 26, and wherein the electrically conductive material defines an electrically conductive path along an entirety of the length of the via.
[0231] The electrically conductive fill 35 of the via 34 can be defined by the matrix of a plurality of electrically conductive particles that are packed and subsequently sintered so as to bond adjacent ones of the particles to each other. It will be appreciated from the description below that the electrically conductive path can define any shape as desired. It is envisioned that at least a portion of the electrically conductive path is nonlinear.
[0232] Further, the electrically conductive fill can include silver or copper particles that can be mixed with other electrically conductive materials to produce a distribution of particles whereby the electrically conductive other electrically conductive materials can occupy some of the interstices. The other electrically conductive materials can include one or more of electrically conductive polymers, electrically conductive metals, electrically conductive ceramics, electrically conductive compounds, or the like, such as graphene, electrically conductive carbides, and intermetallic composites. Alternatively or additionally, supercritical fluids have extremely low surface tension, and can be used to deposit metal. It is envisioned that they can at least partially fill the interstices in the vias after the sintering step. Supercritical fluid carries metal with low surface tension so metal can enter tight spaces. Accordingly, the metal can be deposited in the holes 26. Another option is to the supercritical deposition of nanoparticles in the hole, thereby occupying at least a portion of the interstices.
[0233] It is recognized that methods for cleaning the substrate 20 are provided as warranted. For instance, residual suspension can be clean off the first and second surfaces 22 and 24 as desired, including before the packing step, before the sintering step, and before the surface finishing step, and after the surface finishing step. The residual suspension can be removed, for instance, using a suitable wand such as a Teflon wand. Alternatively or additionally, an alcohol such as IPA and soft semi-abrasive material can clean residual powder.
[0234] Fig. 22 shows an overview of an exemplary assembly 500 of components discussed above and throughout, according to one aspect of the system and method disclosed herein. In this example, multiple devices can be mounted onto the interposer 21, and at the bottom are additional devices. The interposer 21 can have several sections of through-glass or through-silicon vias of the type described above. Additional interposer or other types of layers are shown in green as part of the assembly structure of the devices. These layers may be used for additional interconnections. Some interconnections may be made on either the top or the bottom of the interposer 21 In one example, an application specific integrated circuit can be mounted to the substrate 20 so as to at least partially define a die package. In another example, a silicon photonics ship can be mounted onto the substrate so as to be in optical communication with the substrate 20 . In yet another example, a transceiver can be mounted onto the glass substrate so as to be in electrical communication with the electrically conductive material.
[0235] It should be appreciated that the illustrations and discussions of the
embodiments shown in the figures are for exemplary purposes only, and should not be construed limiting the disclosure. One skilled in the art will appreciate that the present disclosure contemplates various embodiments. Additionally, it should be understood that the concepts described above with the above-described embodiments may be employed alone or in combination with any of the other embodiments described above. It should be further appreciated that the various alternative embodiments described above with respect to one illustrated embodiment can apply to all embodiments as described herein, unless otherwise indicated.

Claims

Claims:
1. A method of producing an electrical component comprising the steps of:
applying an anti-oxidation agent to a plurality of copper particles;
introducing a suspension of the copper particles in a liquid medium into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate opposite the first surface along a transverse direction;
evacuating the liquid medium from the hole;
sintering the copper particles so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end.
2. The method as recited in claim 1, wherein the applying step is performed prior to the introducing step.
3. The method as recited in any one of the independent claims, wherein the applying step composes coating the copper particles with an anti-oxidation coating that impedes exposure of the copper particles to oxygen.
4. The method as recited in any one of the preceding claims, wherein the anti-oxidation coating comprises an anti-agglomeration coating.
5. The method as recited in any one of claims 1 to 4, wherein the anti-oxidation coating comprises oleic acid.
6. The method as recited in any one of claims 1 to 4, wherein the anti-oxidation coating comprises steric acid.
7. The method as recited in any one of claims 1 to 4, wherein the anti-oxidation coating compnses decanoic acid.
8. The method as recited in any one of claims 1 to 2, wherein the applying step comprises coating the copper particles with an anti-oxidation coating that reduces oxidation that has formed on the copper particles.
9. The method as recited in any one of the preceding claims, wherein the anti-oxidation agent comprises a getter material.
10. The method as recited in any one of the preceding claims, wherein the anti-oxidation agent comprises titanium.
11. The method as recited in any one of the preceding claims, wherein the anti-oxidation agent comprises carbon.
12. The method as recited in any one of the preceding claims, wherein the anti-oxidation agent comprises a neoalkoxy titanate.
13. The method as recited in any one of the preceding claims, wherein the evacuating step removes a quantity of copper oxide from the hole.
14. The method as recited in claim 13, wherein the evacuating step comprises subjecting the suspension to vacuum forces.
15. The method as recited in claim 13, wherein the evacuating step comprises subjecting the suspension to centrifugal forces.
16. The method as recited in any one of the preceding claims, wherein the sintering step removes a quantity of copper oxide from the hole.
17. The method as recited in claim 16, wherein the sintering step removes copper oxide produced from oxidation of the copper particles.
18. The method as recited in any one of the preceding claims, wherein the suspension is fritless.
19. A method of producing an electrical component comprising the steps of:
introducing a suspension of copper particles in a liquid medium into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate opposite the first surface along a transverse direction;
evacuating the liquid medium from the hole; and
sintering the copper particles so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end, wherein the sintering step substantially removes copper oxide of the copper particles.
21. The method as recited in claim 20, further comprising the step of applying an anti- oxidation agent to the copper particles.
22. The method as recited in claim 21, wherein the anti-oxidation agent comprises a getter material.
23. The method as recited in claim 21, wherein the anti-oxidation agent comprises titanium.
24. The method as recited in claim 21, wherein the anti-oxidation agent comprises carbon.
25. The method as recited in claim 21, wherein the anti-oxidation agent comprises a neoalkoxy titanate.
26. The method as recited in claim 21, wherein the anti-oxidation agent comprises an anti- agglomeration agent.
27. The method as recited in claim 26, wherein the anti-agglomeration agent comprises oleic acid.
28. The method as recited in claim 26, wherein the anti-oxidation coating comprises steric acid.
29. The method as recited in claim 26, wherein the anti-oxidation coating comprises decanoic acid.
30. A method of producing an electrical component comprising the steps of:
applying an anti-agglomeration agent to a plurality of copper particles;
introducing a suspension of copper particles in a liquid medium into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate opposite the first surface along a transverse direction;
evacuating the liquid medium from the hole; and
sintering the copper particles so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end, wherein the sintering step substantially removes copper oxide of the copper particles.
31. The method as recited in claim 30, wherein the anti-agglomeration agent is configured as an anti-agglomeration coating that comprises oleic acid.
32. The method as recited in claim 30, wherein the anti-agglomeration agent is configured as an anti-agglomeration coating that comprises steric acid.
33. The method as recited in claim 30, wherein the anti- agglomeration agent is configured as an anti-agglomeration coating that comprises decanoic acid.
34. The method as recited in any one of claims 30 to 33, wherein the anti-agglomeration agent comprises sound waves applied to the particles during sonication of the suspension.
35. A method of producing an electrical component comprising the steps of:
introducing at least one suspension into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate, wherein the at least one suspension includes first and second bimodal particles, wherein the first and second bimodal particles comprise different metals, and the second bimodal metals have a lower melting point than the first bimodal particles;
evacuating the liquid medium from the hole such that the second bimodal particles are disposed in interstices defined by the first bimodal particles; and
sintering the first and second bimodal particles in the hole so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end.
36. The method as recited in claim 35, wherein the first bimodal particles comprise silver or copper.
37 The method as recited in any one of claims 35 to 36, wherein the second bimodal particles comprise indium.
38. The method as recited in any one of claims 35 to 36, wherein the second bimodal particles comprise tin.
39. The method as recited in any one of claims 35 to 38, wherein the first bimodal particles have a first bimodal average particle size, and the second bimodal particles have a second bimodal average particle size, and the first bimodal particle size and the second bimodal average particle size can define a ratio that ranges from approximately 4: 1 to approximately 10: 1.
40. The method as recited in claim 39, wherein the ratio is approximately 7 : 1
41. The method as recited in any one of claims 35 to 40, wherein the sintering step causes the bimodal particles to form an alloy with the first bimodal particles.
42. The method as recited in claim 41, wherein the sintering step causes the bimodal particles to define a porous through-path from the first end to the second end.
43. The method as recited in claim 42, further comprising the step of tuning a porosity of the matrix at least in part by controlling at least one of a volume and an average size of the second bimodal particles relative to the first bimodal particles.
44. The method as recited in any one of claims 35 to 43, wherein the second bimodal present are in a range between five percent by volume of the hole to approximately 20 percent by volume of the hole.
45. The method as recited in claim 44, wherein the second bimodal present are present in a volume of approximately ten percent relative to the volume of the hole.
46. The method as recited in any one of claims 35 to 45, wherein the first and second bimodal particles comprise a bulk fill.
47. The method as recited in any one of claims 35 to 45, wherein the first and second bimodal particles comprise a final fill.
48. The method as recited in claim 47, further comprising the steps of introducing a bulk fill suspension into the hole and evacuating the liquid from the bulk fill, prior to performing the introducing and evacuating steps for the final fill.
49. The method as recited in any one of claims 35 to 45, wherein the first and second bimodal particles comprise first and second trimodal particles, and the at least one suspension further comprises third trimodal particles.
50. The method as recited in claim 49, wherein the third trimodal particles comprise silver or copper.
51. The method as recited in claim 49, wherein the third trimodal particles comprise indium.
52. The method as recited in claim 49, wherein the third trimodal particles comprise tin.
53. The method as recited in any one of claims 49 to 52, wherein the second trimodal particles have an average particle size, and the third bimodal particles have an average particle size, and the average particle size of the second trimodal particles and the average particle size of the third trimodal particles define a ratio that ranges from approximately 4: 1 to approximately 10 1
54. The method as recited in claim 53, wherein the ratio is approximately 7: 1.
55. The method as recited in any one of claims 35 to 46 and 49 to 54, further comprising the step of performing a final fill operation.
56. The method as recited in any one of claims 35 to 45 and 47 to 54, further comprising the step of applying a redistribution layer to one or both of the first and second surfaces.
57. The method as recited in claim 56, further comprising the step of performing a final fill operation.
58. The method as recited in claim 56, wherein no subsequent introducing steps are performed with a final fill.
59. The method as recited in claim 56, further comprising the step of applying a sacrificial layer to at least one of the first and second outer surfaces, the sacrificial layer having an aperture aligned with the hole, such that the particles extend into the aperture after the evacuating step.
60. The method as recited in claim 58, further comprising the step of removing the sacrificial layer.
61. The method as recited in any one of claims 59 to 60, further comprising the step of compressing the particles prior to the sintering step.
62. The method as recited in any one of claims 59 to 61, further comprising the step of applying an electrically conductive layer to at least one of the first and second outer surfaces prior to the introducing step.
63. The method as recited in claim 62, wherein the electrically conductive layer comprises titanium.
64. The method as recited in any one of claims 62 to 63, wherein the step of applying further composes coating at least one outer portion of an inner surface of the hole with the electrically conductive layer.
65. The method as recited in claim 64, further comprising the step of compressing the particles prior to the sintering step.
66. A method of producing an electrical component comprising the steps of:
introducing at least one suspension into a hole that extends through a glass substrate from a first surface of the glass substrate to a second surface of the glass substrate opposite the first surface along a transverse direction, wherein the at least one suspension includes first and second bimodal particles;
evacuating the liquid medium from the hole such that the second bimodal particles are disposed in interstices defined by the first bimodal particles; and
sintering the first and second bimodal particles in the hole so as to define an electrically conductive matrix having first and second ends opposite each other along the transverse direction, wherein the electrically conductive matrix defines an electrically conductive path from the first end to the second end.
67. The method as recited in claim 66, wherein the first bimodal particles have a first bimodal average particle size, and the second bimodal particles have a second bimodal average particle size, and the first bimodal particle size and the second bimodal average particle size can define a ratio that ranges from approximately 4: 1 to approximately 10: 1.
68. The method as recited in claim 67, wherein the ratio is approximately 7 : 1
69. The method as recited in any one of claims 66 to 68, wherein the second bimodal particles are present are in a range between five percent by volume of the hole to approximately 20 percent by volume of the hole.
70. The method as recited in claim 69, wherein the second bimodal present are present in a volume of approximately ten percent relative to the volume of the hole.
71. The method as recited in any one of claims 67 to 70, wherein the first and second bimodal particles comprise first and second trimodal particles, and the at least one suspension further composes third trimodal particles.
72. The method as recited in claim 71, wherein the second trimodal particles have an average particle size, and the third bimodal particles have an average particle size, and the average particle size of the second trimodal particles and the average particle size of the third trimodal particles define a ratio that ranges from approximately 4: 1 to approximately 10: 1.
73. The method as recited in claim 72, wherein the ratio is approximately 7: 1.
PCT/US2020/015997 2019-01-31 2020-01-31 Electrically conductive vias and methods for producing same WO2020160343A1 (en)

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JPH0621655A (en) * 1992-07-01 1994-01-28 Fujitsu Ltd Manufacture of ceramic circuit board
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