WO2019205447A1 - Method for improving flash memory garbage collection - Google Patents

Method for improving flash memory garbage collection Download PDF

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WO2019205447A1
WO2019205447A1 PCT/CN2018/105862 CN2018105862W WO2019205447A1 WO 2019205447 A1 WO2019205447 A1 WO 2019205447A1 CN 2018105862 W CN2018105862 W CN 2018105862W WO 2019205447 A1 WO2019205447 A1 WO 2019205447A1
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flash
flash memory
data
memory
block
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Chinese (zh)
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许豪江
李庭育
黄中柱
谢享奇
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江苏华存电子科技有限公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0253—Garbage collection, i.e. reclamation of unreferenced memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control

Definitions

  • the present invention relates to the field of flash memory technology, and in particular to a method for improving flash garbage data recovery.
  • Flash memory is a long-lived non-volatile memory that retains stored data information in the event of a power outage. Data deletion is not in a single byte but in a fixed block. The block size is typically 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory (EEPROM). Unlike flash memory, EEPROM can be erased and rewritten at the byte level instead of the entire chip eraser, while most chips in flash require a block erase. except. Since data can still be saved when it is powered off, flash memory is often used to save setup information, such as saving data in a computer's BIOS (basic program), PDA (personal digital assistant), digital camera, and so on.
  • BIOS basic program
  • PDA personal digital assistant
  • Flash memory is a non-disappearing memory device that holds data. Data is lost after losing power.
  • Common three-level cells TLC that store three bits
  • MLC multi-level cell
  • SLC single-level cell
  • flash garbage collection Since flash cannot write data repeatedly after writing data, additional flash blocks must be used to organize the written data. This process is called flash garbage collection. There are three cases of garbage collection. The first type is called the replacement mechanism. The new flash data completely replaces the old flash block. The second type is the partial replacement mechanism. The new data flash block only needs to be supplemented by the old flash block. The third type is the non-replacement mechanism, the newly generated data flash block, and all the data content is taken from several old flash blocks. The first type is the most efficient, and the third type takes the most time and cost.
  • a flash translation layer is needed in the flash memory to implement a virtual block device on the flash chip, and the logical address is mapped to the physical address of the flash memory through the mapping table.
  • garbage collection mechanisms it is necessary to quickly find valid data in the block and move to a new flash block.
  • the traditional method must read each position in the block and compare the image table to find out whether the content of the mapping table is met, and whether the valid data or invalid data is judged. This method takes a lot of reading time and affects the overall efficiency.
  • a method for improving flash garbage data recovery comprising a memory control chip, wherein the memory control chip is provided with a flash instruction control device, a flash physical address table, and a data buffer,
  • the data buffer is connected to a plurality of external flash memories;
  • the plurality of flash memories include a first flash memory, a second flash memory, a third flash memory, an Nth flash memory, and N is an integer greater than 3.
  • the flash memory has 1024 blocks, each block has 256 pages, and each page is composed of 32 sectors.
  • the method comprises the following steps:
  • the instruction control device of the memory control chip moves the data in the buffer to the new flash page
  • the invention has the beneficial effects that the invention substantially reduces the time of garbage collection by flash physical address table. Quickly find the garbage block of the garbage collection and only move the minimum amount of flash data. Complete a single garbage collection.
  • Figure 1 is a schematic block diagram of the present invention
  • Figure 2 is a flow chart of the present invention.
  • the present invention provides a technical solution: a method for improving flash garbage data recovery, comprising a memory control chip 1 , wherein the memory control chip 1 is provided with a flash instruction control device 2 , a flash physical address table 3 and data a buffer 4, the data buffer 4 is connected to a plurality of external flash memories; the plurality of flash memories include a first flash memory 5, a second flash memory 6, a third flash memory 7, an Nth flash memory, and N is an integer greater than 3; There are 1024 blocks, each block has 256 pages, and each page is composed of 32 sectors; assuming that a flash block has 256 pages, the flash physical address table can be 4096 bits or a flash page as a unit. 1 is valid data and 0 is invalid data.
  • the memory control chip has a flash command control device through which commands can be issued to control the flash chip.
  • the method for improving flash garbage data recovery includes the following steps:
  • the instruction control device of the memory control chip moves the data in the buffer to the new flash page
  • the actual valid data has 64, and the flash physical address table is in units of one flash page.
  • 256 blocks must be read when garbage collection is performed, and then the logical address is mapped to the flash physics.
  • the address mapping table determines whether to move to a new flash block. In this way, the entire old flash block data can be moved by reading the actual effective position 128 times. Save four times the time. The less valid data in a flash block, the more time is saved.
  • the present invention substantially reduces the time for garbage collection by flashing a physical address table. Quickly find the garbage block of the garbage collection and only move the minimum amount of flash data. Complete a single garbage collection.

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
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Abstract

A method for improving flash memory garbage collection, comprising: a memory control chip (1). The memory control chip (1) is provided with a flash memory instruction control device (2), a flash memory physical address table (3), and a data buffer (4). The data buffer (4) is connected to a plurality of external flash memories, which comprise a first flash memory (5), a second flash memory (6), a third flash memory (7) and up to an N th flash memory, wherein N is an integer greater than 3. By employing the flash memory physical address table (3), the method significantly reduces time required for performing garbage collection and can quickly locate a flash memory block for said garbage collection. In this way, a single garbage collection task can be completed with only a minimum amount of data in flash memory needing to be moved.

Description

一种提升闪存垃圾数据回收方法Method for improving flash garbage data recovery 技术领域Technical field
本发明涉及闪存技术领域，具体为一种提升闪存垃圾数据回收方法。The present invention relates to the field of flash memory technology, and in particular to a method for improving flash garbage data recovery.
背景技术Background technique
闪存是一种长寿命的非易失性(在断电情况下仍能保持所存储的数据信息)的存储器，数据删除不是以单个的字节为单位而是以固定的区块为单位，区块大小一般为256KB到20MB。闪存是电子可擦除只读存储器(EEPROM)的变种，闪存与EEPROM不同的是，EEPROM能在字节水平上进行删除和重写而不是整个芯片擦写，而闪存的大部分芯片需要块擦除。由于其断电时仍能保存数据，闪存通常被用来保存设置信息，如在电脑的BIOS(基本程序)、PDA(个人数字助理)、数码相机中保存资料等。Flash memory is a long-lived non-volatile memory that retains stored data information in the event of a power outage. Data deletion is not in a single byte but in a fixed block. The block size is typically 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory (EEPROM). Unlike flash memory, EEPROM can be erased and rewritten at the byte level instead of the entire chip eraser, while most chips in flash require a block erase. except. Since data can still be saved when it is powered off, flash memory is often used to save setup information, such as saving data in a computer's BIOS (basic program), PDA (personal digital assistant), digital camera, and so on.
闪存为非消失性的存储器装置，能保存数据。不会再失去电力后遗失数据，常见的有存储三个比特的三级单元(TLC)，两个比特的多级单元(MLC)闪存以及一个单级单元(SLC)闪存，当单元内储存的比特数越多，容量也越大。Flash memory is a non-disappearing memory device that holds data. Data is lost after losing power. Common three-level cells (TLC) that store three bits, two-bit multi-level cell (MLC) flash memory, and a single-level cell (SLC) flash memory are stored in the cell. The larger the number of bits, the larger the capacity.
由于闪存写入数据后不可以重复再写入数据，必须要使用额外的闪存块整理已写入的数据，此过程称为闪存垃圾回收。垃圾回收有三种情况，第一种类型称为替换机制，新的闪存数据完全取代旧的闪存块；第二种类型为部分替换机制，新的数据闪存块只有部分需要由旧闪存块取得数据补足；第三种类型为不能替换机制，新产生的数据闪存块，全部的数据内容都从好几个旧的闪存块取出。第一类型最有效率，第三类型需花费最多的时间和成本。Since flash cannot write data repeatedly after writing data, additional flash blocks must be used to organize the written data. This process is called flash garbage collection. There are three cases of garbage collection. The first type is called the replacement mechanism. The new flash data completely replaces the old flash block. The second type is the partial replacement mechanism. The new data flash block only needs to be supplemented by the old flash block. The third type is the non-replacement mechanism, the newly generated data flash block, and all the data content is taken from several old flash blocks. The first type is the most efficient, and the third type takes the most time and cost.
为了使闪存有高效的使用效能，闪存中需要一个闪存转换层在闪存芯片上实现了一个虚拟块设备，主要透过映射表来把逻辑地址映射到闪存的物理地址。依照第二和第三类型的垃圾回收机制需要很快的在块中找寻有效数据，搬移到新的闪存块中。传统方法必须要把块中每一个位置读取后，比对映像 表，找出是否符合映射表内容，判断有效数据或无效数据。此方式花费大量的读取时间，影响整体效率。In order to make the flash memory use efficiently, a flash translation layer is needed in the flash memory to implement a virtual block device on the flash chip, and the logical address is mapped to the physical address of the flash memory through the mapping table. According to the second and third types of garbage collection mechanisms, it is necessary to quickly find valid data in the block and move to a new flash block. The traditional method must read each position in the block and compare the image table to find out whether the content of the mapping table is met, and whether the valid data or invalid data is judged. This method takes a lot of reading time and affects the overall efficiency.
发明内容Summary of the invention
本发明的目的在于提供一种提升闪存垃圾数据回收方法，以解决上述背景技术中提出的问题。It is an object of the present invention to provide a method for improving flash garbage data recovery to solve the problems raised in the above background art.
为实现上述目的，本发明提供如下技术方案：一种提升闪存垃圾数据回收方法,包括存储器控制芯片，所述存储器控制芯片内设有闪存指令控制装置、闪存物理地址表和数据缓冲区，所述数据缓冲区连接外部的多个闪存；多个闪存包括第一闪存、第二闪存、第三闪存、第N闪存，N为大于3的整数。To achieve the above object, the present invention provides the following technical solution: a method for improving flash garbage data recovery, comprising a memory control chip, wherein the memory control chip is provided with a flash instruction control device, a flash physical address table, and a data buffer, The data buffer is connected to a plurality of external flash memories; the plurality of flash memories include a first flash memory, a second flash memory, a third flash memory, an Nth flash memory, and N is an integer greater than 3.
优选的，所述闪存有1024个块，每个块有256个页，每个页由32个扇形组合而成。Preferably, the flash memory has 1024 blocks, each block has 256 pages, and each page is composed of 32 sectors.
优选的，包括以下步骤：Preferably, the method comprises the following steps:
A、依照存储器控制芯片中的闪存物理地址表查询一个块中的有效数据，选取最少有效数据的闪存块优先做垃圾回收；A. Query the valid data in a block according to the physical address table of the flash memory in the memory control chip, and select the flash block with the least valid data to do garbage collection first;
B、挑选为有效数据的闪存页，读取数据到存储器控制芯片内的缓冲区；B. Select a flash page that is valid data, and read the data to a buffer in the memory control chip;
C、透过存储器控制芯片的指令控制装置将缓冲区内的数据搬移到新的闪存页；C. The instruction control device of the memory control chip moves the data in the buffer to the new flash page;
D、更新闪存物理地址表，将新的闪存块中的页对映的比特设为1，旧的闪存页比特设为0。D. Update the flash physical address table, set the bit of the page in the new flash block to 1 and the old flash page bit to 0.
与现有技术相比，本发明的有益效果是：本发明通过闪存物理地址表，大幅的缩减垃圾回收的时间。快速的找到该垃圾回收的闪存块，只搬移最少数量的闪存数据。完成单一次的垃圾回收。Compared with the prior art, the invention has the beneficial effects that the invention substantially reduces the time of garbage collection by flash physical address table. Quickly find the garbage block of the garbage collection and only move the minimum amount of flash data. Complete a single garbage collection.
附图说明DRAWINGS
图1为本发明原理框图；Figure 1 is a schematic block diagram of the present invention;
图2为本发明流程图。Figure 2 is a flow chart of the present invention.
具体实施方式detailed description
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
请参阅图1，本发明提供一种技术方案：一种提升闪存垃圾数据回收方法,包括存储器控制芯片1，所述存储器控制芯片1内设有闪存指令控制装置2、闪存物理地址表3和数据缓冲区4，所述数据缓冲区4连接外部的多个闪存；多个闪存包括第一闪存5、第二闪存6、第三闪存7、第N闪存，N为大于3的整数；所述闪存有1024个块，每个块有256个页，每个页由32个扇形组合而成；假设一个闪存块有256个页，闪存物理地址表可以4096比特或者一个闪存页当一个单位。1代表为有效数据，0为无效数据。存储器控制芯片内有一个闪存指令控制装置，透过这个装置可以发出指令控制闪存芯片。一个用于存放数据的缓冲区，一个闪存物理地址表。Referring to FIG. 1 , the present invention provides a technical solution: a method for improving flash garbage data recovery, comprising a memory control chip 1 , wherein the memory control chip 1 is provided with a flash instruction control device 2 , a flash physical address table 3 and data a buffer 4, the data buffer 4 is connected to a plurality of external flash memories; the plurality of flash memories include a first flash memory 5, a second flash memory 6, a third flash memory 7, an Nth flash memory, and N is an integer greater than 3; There are 1024 blocks, each block has 256 pages, and each page is composed of 32 sectors; assuming that a flash block has 256 pages, the flash physical address table can be 4096 bits or a flash page as a unit. 1 is valid data and 0 is invalid data. The memory control chip has a flash command control device through which commands can be issued to control the flash chip. A buffer for storing data, a flash physical address table.
本发明中，提升闪存垃圾数据回收方法包括以下步骤：In the present invention, the method for improving flash garbage data recovery includes the following steps:
A、依照存储器控制芯片中的闪存物理地址表查询一个块中的有效数据，选取最少有效数据的闪存块优先做垃圾回收；A. Query the valid data in a block according to the physical address table of the flash memory in the memory control chip, and select the flash block with the least valid data to do garbage collection first;
B、挑选为有效数据的闪存页，读取数据到存储器控制芯片内的缓冲区；B. Select a flash page that is valid data, and read the data to a buffer in the memory control chip;
C、透过存储器控制芯片的指令控制装置将缓冲区内的数据搬移到新的闪存页；C. The instruction control device of the memory control chip moves the data in the buffer to the new flash page;
D、更新闪存物理地址表，将新的闪存块中的页对映的比特设为1，旧的闪存页比特设为0。D. Update the flash physical address table, set the bit of the page in the new flash block to 1 and the old flash page bit to 0.
假设闪存为256个页的块，实际有效的数据有64个，而闪存物理地址表以一个闪存页为单位，传统方式做垃圾回收时必须读取256个块，再参考逻辑地址映射到闪存物理地址的映射表，决定是否搬到新的闪存块，利用此方 式只要读取实际的有效位置128次就能搬移整个旧闪存块数据。节省四倍的时间。一个闪存块内的有效数据越少，节省的时间就越多。Assuming that the flash memory is a block of 256 pages, the actual valid data has 64, and the flash physical address table is in units of one flash page. In the conventional way, 256 blocks must be read when garbage collection is performed, and then the logical address is mapped to the flash physics. The address mapping table determines whether to move to a new flash block. In this way, the entire old flash block data can be moved by reading the actual effective position 128 times. Save four times the time. The less valid data in a flash block, the more time is saved.
综上所述，本发明通过闪存物理地址表，大幅的缩减垃圾回收的时间。快速的找到该垃圾回收的闪存块，只搬移最少数量的闪存数据。完成单一次的垃圾回收。In summary, the present invention substantially reduces the time for garbage collection by flashing a physical address table. Quickly find the garbage block of the garbage collection and only move the minimum amount of flash data. Complete a single garbage collection.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。While the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art The scope of the invention is defined by the appended claims and their equivalents.

Claims (3)

  1. 一种提升闪存垃圾数据回收方法,包括存储器控制芯片(1)，其特征在于：所述存储器控制芯片(1)内设有闪存指令控制装置(2)、闪存物理地址表(3)和数据缓冲区(4)，所述数据缓冲区(4)连接外部的多个闪存；多个闪存包括第一闪存(5)、第二闪存(6)、第三闪存(7)、第N闪存，N为大于3的整数。A method for improving flash garbage data recovery, comprising a memory control chip (1), characterized in that: the memory control chip (1) is provided with a flash instruction control device (2), a flash physical address table (3) and a data buffer a region (4), the data buffer (4) is connected to a plurality of external flash memories; the plurality of flash memories includes a first flash memory (5), a second flash memory (6), a third flash memory (7), an Nth flash memory, and N Is an integer greater than 3.
  2. 根据权利要求1所述的一种提升闪存垃圾数据回收方法，其特征在于：所述闪存有1024个块，每个块有256个页，每个页由32个扇形组合而成。The method for recovering flash garbage data according to claim 1, wherein the flash memory has 1024 blocks, each block has 256 pages, and each page is composed of 32 sectors.
  3. 根据权利要求1所述的一种提升闪存垃圾数据回收方法，其特征在于：包括以下步骤：The method for recovering flash garbage data according to claim 1, comprising the steps of:
    A、依照存储器控制芯片中的闪存物理地址表查询一个块中的有效数据，选取最少有效数据的闪存块优先做垃圾回收；A. Query the valid data in a block according to the physical address table of the flash memory in the memory control chip, and select the flash block with the least valid data to do garbage collection first;
    B、挑选为有效数据的闪存页，读取数据到存储器控制芯片内的缓冲区；B. Select a flash page that is valid data, and read the data to a buffer in the memory control chip;
    C、透过存储器控制芯片的指令控制装置将缓冲区内的数据搬移到新的闪存页；C. The instruction control device of the memory control chip moves the data in the buffer to the new flash page;
    D、更新闪存物理地址表，将新的闪存块中的页对映的比特设为1，旧的闪存页比特设为0。D. Update the flash physical address table, set the bit of the page in the new flash block to 1 and the old flash page bit to 0.
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