WO2018047704A1 - Apparatus for producing electronic device, method for controlling same, electronic device and method for producing electronic device - Google Patents

Abstract

[Problem] To provide a production apparatus which separates/bonds a high-quality, highly efficient or low-cost epitaxial thin film. [Solution] A production apparatus which is provided with: a separation device 10 that comprises, for example, a substrate holding body 12 which holds a growth substrate 13 for obtaining a thin film 14 that is an epitaxial film, a substrate supporting body 11 which supports the substrate holding body, a thin film holding body 16 which holds the thin film separated from the growth substrate, a thin film supporting body 15 which supports the thin film holding body, a first chamber 200 which is composed of the substrate supporting body and the thin film holding body, a second chamber 210 which is composed of the substrate holding body and the substrate supporting body, and a third chamber 220 which is composed of the thin film holding body and the thin film supporting body; and a pressure device 50 that applies first, second and third air pressures to the first, second and third chambers, respectively.

Description

Electronic device manufacturing apparatus and control method thereof, and electronic device and manufacturing method thereof

The present invention relates to a manufacturing apparatus for manufacturing an electronic device and a control method thereof, and an electronic device and a manufacturing method thereof. The electronic device also includes a semiconductor device. A manufacturing apparatus for manufacturing an electronic device also includes a manufacturing apparatus for manufacturing a semiconductor. For example, the present invention relates to a technique for separating an epitaxial film (hereinafter referred to as a thin film) grown from a substrate, or a technique for bonding the separated epitaxial film (thin film) to another substrate (or transfer material).

As an apparatus for separating an epitaxial film from a substrate, for example, there is a configuration disclosed in Patent Document 1 (FIG. 3). The apparatus disclosed in Patent Document 1 includes a substrate holding portion that has a suction groove and holds the semiconductor substrate on a curved suction surface by bending the semiconductor substrate by vacuum suction, and a wedge between the semiconductor substrate and the semiconductor thin film (porous). Disclosed are a wedge portion that peels the semiconductor thin film from the semiconductor substrate by pressing against the substrate layer, a semiconductor thin film holding portion that has suction holes and buffer portions and sucks and holds the semiconductor thin film by vacuum suction, and a structure thereof. Is done.

Next, in the structure disclosed in Patent Document 2 (FIG. 4), in a peeling apparatus that peels the network film from the Si substrate, the network film that has grown on the Si substrate is pressed from above and the inside of the peeling apparatus is evacuated. A structure is disclosed in which the reticulated film is sucked and the peeling device is pulled up.

Next, in the structure disclosed in Patent Document 3 (FIG. 3), a thin film is formed by applying a thermal shock to a nitride-based semiconductor crystal having a heating part such as a hot plate and epitaxially grown on a first substrate. A peeling structure is disclosed. In addition, a structure in which separation is performed by mechanical impact (fluid ejection) and a structure in which separation is performed by vibration impact (ultrasonic oscillator) are also disclosed.

Next, the structure disclosed in Patent Document 4 (FIG. 1) is a film peeling detection device that detects the peeling of a thin film adhered to the surface of a substrate in a non-contact manner, and the substrate is irradiated with laser light. An optical system, an image sensor that receives scattered light from a thin film and optically detects a speckle pattern contained in the scattered light, and a peeling determination unit that determines peeling of the thin film based on the output of the image sensor are disclosed. Is done.

JP 2004-128148 A JP 2001-85725 A JP 2007-220899 A JP 2002-005816 A

It is necessary to improve the reliability of the thin film by increasing the accuracy of each of the peeling device and the bonding device (bonding device for bonding the peeled thin film to another substrate that is a part of the product). In addition, a handling process (from the peeling process to the bonding process) for handling the peeled thin film is necessary from the viewpoint of improving the reliability of the peeled thin film. Furthermore, it is necessary to reduce the cost of these devices while improving the reliability of the peeled thin film.

For example, the manufacturing apparatus disclosed in Patent Document 1 includes a controller, and the controller is configured to remove the peeling wafer according to the difference in the peeling strength of the porous layer that is the separation layer (a place where peeling is difficult and a place where peeling is easy). Constant speed rotation, wedge insertion amount, and wedge pressure must be adjusted. This is an increase in the number of parts of the manufacturing apparatus, resulting in an increase in cost.

For example, in the configuration disclosed in Patent Document 1, the semiconductor thin film holding portion is provided so that the compression spring pushes up the shaft so that the upward tension is always applied. The tension in the direction of peeling from the semiconductor substrate is always applied to promote peeling. That is, since the compression spring unilaterally promotes peeling of the thin film being peeled by the wedge regardless of the control of the controller, the reliability of the thin film is reduced. The structure disclosed in Patent Document 2 is the same.

For example, in the configuration disclosed in Patent Document 3, a structure in which the thin film is peeled by three methods (thermal shock, mechanical shock, vibration shock) is disclosed, but the reliability of the thin film being peeled is maintained. The method and its structure are not disclosed. It is desirable that at least one of the plurality of problems described above is solved from the viewpoint of improving the reliability of the peeled thin film or reducing the cost of these devices.

The manufacturing apparatus of the present invention includes a substrate holder that holds a growth substrate for obtaining a thin film, a substrate support that supports the substrate holder, a thin film holder that holds a thin film peeled off from the growth substrate, and a thin film holder. A first chamber composed of a substrate support and a thin film support, a second chamber composed of the substrate support and the substrate support, a third chamber composed of the thin film support and the thin film support, And a pressure device that applies first, second, and third air pressures corresponding to the first, second, and third chambers, respectively.

It is an example (sectional drawing) of the manufacturing apparatus which implement | achieves this invention. It is the peeling apparatus (1st example) contained in the manufacturing apparatus of this invention. FIG. 3 is an enlarged view of a part of FIG. 2 when not heated. It is an enlarged view at the time of the heat application of FIG. It is an enlarged view of the thin film support body (1st example) of FIG. FIG. 6 is a top view (first example) of FIG. 5. It is a modification of the thin film support body of FIG. It is an enlarged view of the thin film support body (2nd example) of FIG. It is an enlarged view of the thin film support body (3rd example) of FIG. It is an enlarged view of the thin film support body (4th example) of FIG. It is the joining apparatus (1st example: at the time of a 1st state) included in the manufacturing apparatus of this invention. It is the joining apparatus (1st example: at the time of a 2nd state) contained in the manufacturing apparatus of this invention. It is the joining apparatus (2nd example: at the time of a 1st state) included in the manufacturing apparatus of this invention. It is the joining apparatus (2nd example: at the time of a 2nd state) included in the manufacturing apparatus of this invention. It is the thin film (at the time of a 1st state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 2nd state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 3rd state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 4th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 5th state) which the manufacturing apparatus of this invention handles. It is the peeling apparatus (2nd example) contained in the manufacturing apparatus of this invention. It is an enlarged view at the time of the heat application of FIG. It is the thin film (at the time of a 6th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 7th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of 8th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 9th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 10th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the 11th state) which the manufacturing apparatus of this invention handles. It is the thin film (at the time of a 12th state) which the manufacturing apparatus of this invention handles. It is the control method of the manufacturing apparatus of this invention. It is the control method of the peeling apparatus of this invention. It is the control method of the joining apparatus of this invention.

DESCRIPTION OF SYMBOLS 1 Manufacturing apparatus 10, 10A Peeling apparatus 11 Substrate support body 12 Substrate holding body 13 Growth substrate 14 Thin film (epitaxial film)
15, 15A, 15B, 15C, 15D Thin film support 16 Thin film holder 17 (elastic strain) deformed portion 18, 18A Notch portions 19, 19A (elastic strain) deformed region 20 Joining device 21 Transfer support 22 Transfer hold Body 23 Transfer material 24, 25, 151, 153 Hole 30 Thin film support transport mechanism 31 Thin film support moving material 40 Housing (chassis)
50 pressure device 51 first pressure device 52 second pressure device 60 first sealing material 61 second sealing material 62 third sealing materials 70, 71, 72 connector 80 acoustic emission measuring instrument 81 ultrasonic flaw detector 90 Heater 91 Infrared local heater 100 Porous metal pad 101 Carbon nano pad 110 Spring 112 First metal 113 Second metal 115 Second thin film support 116 Second thin film holder 120 Gas pressure gauge 122 Second Transfer holder 123 Second transfer material 124 Third transfer material 125 Fourth transfer material 130 First slider 131 Bearing 140 Vertical mechanism 150 Second slider 160 Product substrate 170 Camera 200 First chamber 210 Second chamber Chamber 220 Third chamber 230 Second thin film support transport mechanism 23 Chamber Z1 of the second thin film support moving member 300 fourth chamber 310 fifth chamber 320 a 6, Z2, Z3 gap

FIG. 1 is one embodiment of a plurality of embodiments that simply show a cross-sectional view of the manufacturing apparatus of the present invention. The manufacturing apparatus 1 disclosed in FIG. 1 includes a peeling apparatus 10, a joining apparatus 20, a pressure apparatus 50, a thin film support transport mechanism 30, and a housing 40.

Some features of the present invention are briefly described below. However, these features do not limit the special features of the invention shown in the claims.

As a first feature, the peeling apparatus 10 includes a substrate support 11 and a movable thin film support 15. The joining device 20 includes a movable transfer support 21 and a movable thin film support 15. That is, one thin film support 15 is used in both the peeling device 10 and the bonding device 20. One thin film support 15 is connected to the thin film support transport mechanism 30. Since the thin film 14 from which one thin film support 15 is peeled is also used in the bonding apparatus 20, it is possible to expect an improvement in the quality of the peeled thin film 14 and a reduction in the throughput of the manufacturing process.

As a second feature, the pressure device 50 peels the thin film 14 by supplying optimum air pressure to the three chambers (first, second, and third chambers) of the peeling device 10. A first air pressure higher than atmospheric pressure (about 1 kgf / cm 2) is applied to the first chamber 200, and second and third air lower than atmospheric pressure are applied to the second chamber 210 and the third chamber 220. Apply pressure. At least a difference between the first and third air pressures is applied to both surfaces of the thin film 14. Accordingly, the degree of adsorption between the thin film 14 being peeled and the thin film holder 16 is increased, and the degree of peeling of the thin film 14 being peeled is increased by increasing the degree of adhesion between the growth substrate 13 and the substrate holder 12. . As a result, the peeling time is increased. As a result, the quality of the thin film 14 can be improved.

As a third feature, hydrogen gas is supplied to the first chamber 200. For example, by diffusing hydrogen into the separation region and increasing the strain between the lattices in the diffusion region, the degree of defects in the separation regions (buffer layers) with different numbers of lattices between the gallium nitride GaN and the epitaxial thin film is further increased. Increase. It is possible to realize both speeding up of cleaving that the thin film 14 peels from the growth substrate 13 and improvement of the quality of the thin film 14. Cleavage refers to the property and phenomenon of tearing in the direction of weak bonding strength.

As a fourth feature, the thin film support 15 includes an elastic strain deformation portion 17. Due to the first air pressure higher than the atmospheric pressure, the elastic strain deforming portion 17 rises (upward in the cross-sectional view of FIG. 1). Both high speed and high quality of the cleavage of the thin film 14 from the growth substrate 13 can be realized. The elastic strain deformation portion 17 can be realized by considering the thickness and shape of the thin film support 15. For example, the notch 18 is an example. The elastic strain deformation part 17 may be simply referred to as a deformation part 17.

As a fifth feature, in the bonding apparatus 20, the peeled thin film 14 is removed using three supports (transfer support 21, thin film support 15, and second thin film support 115 (FIG. 13)). Transfer twice. Since the transfer is performed twice with the transfer support 21 as a reference, the surface of the peeled thin film 14 can be reversed. Therefore, a reduction in the throughput of the manufacturing process can be expected. Here, the inversion means that the peeled cleaved surface (B noodle) and the opposite surface can be freely set with respect to the bonding surface of the transfer material or the bonding surface of the product substrate.

As a sixth feature, the transfer material 23 or the second transfer material 123 can be used as the product substrate 160 of the final product. It can be expected to improve the quality of the peeled thin film 14 and shorten the throughput of the manufacturing process.

As a seventh feature, the peeling apparatus 10 is turned upside down (the thin film holder 16 is on the ground E side and the substrate holder 12 is on the top side), and a third transfer material (for example, a product substrate) is placed on the thin film holder 16. By setting, the thin film 14 peeled off from the growth substrate 13 can be directly transferred and bonded to the product substrate. It can be expected to improve the quality of the peeled thin film 14 and shorten the throughput of the manufacturing process.

As an eighth feature, the pressure device 50 supplies an optimum air pressure to the third chamber among the three chambers (third, fourth, and fifth chambers) of the bonding device 20, so that the thin film 14 Is transferred to the transfer material 23. A third air pressure higher than atmospheric pressure is applied to the third chamber. The fixing of the thin film 14 and the thin film holding body 16 and the fixing of the growth substrate 13 and the substrate holding body 12 can be ensured, and as a result, the transfer time can be increased and the quality can be improved.

In FIG. 1, a thin film 14 (epitaxial film) handled by the manufacturing apparatus 1 is applied to, for example, various electronic components shown below and a system in which the electronic components are mounted. For example, solar cells (Solar Cell Module), LED lighting (LED Lamp, LED Light Light Bulb), display (PDP; Plasma Display Panel, LCD; Liquid Crystal Display, OLED: Organic Light-Emitting Diode), semiconductor laser (Semiconductor Laser, Laser (Diode), Optical Image Sensor (Photonic Imager), Projection Display (2D / 3D Projection Display), Virtual Reality / 3D Projection Display (Quantum® Photonic® Imager, Virtual Reality Display (VR), Augmented Reality Display (AR), Mixed Reality Display (MR), Substitutional Reality Display (SR)), NAND Flash Memory, and other non-volatile memory devices and systems (SSD: Solid State Drive). Similarly to the thin film 14, a product substrate 160 (FIGS. 19, 25, and 28) to be described later is also applied to an electronic component and a system on which the electronic component is mounted.

In FIG. 1, a peeling apparatus 10 has a mechanism and a structure for peeling a thin film 14 which is an epitaxial film formed on the surface of a growth substrate 13. The growth substrate 13 and the thin film 14 are formed outside the peeling apparatus 10. The peeling apparatus 10 includes a substrate holder 12 that holds a growth substrate 13. The peeling apparatus 10 includes a substrate support 11 that supports the substrate holder 12. The substrate support 11 is fixed to the housing 40 (the fixing location is not shown). The peeling apparatus 10 includes a thin film holder 16 that adsorbs the thin film 14 peeled from the growth substrate 13. The peeling apparatus 10 includes a thin film support 15 that supports the thin film holder 16. The thin film support 15 is detachably connected to the substrate support 11.

The peeling apparatus 10 includes three chambers. The first chamber 200 is a space formed by the substrate support 11 and the thin film support 15. The second chamber 210 is a space formed by the substrate support 11 and the substrate holder 12. The third chamber is a space formed by the thin film support 15 and the thin film holder 16. In the first chamber 200, the substrate holder 12 and the thin film holder 16, and the growth substrate 13 and the thin film 14 are arranged.

The thin film support 15 includes an elastic strain deformation portion 17. The elastic strain deformation part 17 includes a notch part 18. The shape of the elastic strain deforming portion 17 and the notch portion 18 is temporarily elastically deformed depending on conditions such as the air pressure in the first chamber 200. Details will be described later.

The thin film support transport mechanism 30 includes a thin film support moving material 31. The thin film support moving material 31 transports (moves) the thin film support 15 between the peeling apparatus 10 and the bonding apparatus 20.

The peeling device 10 includes a pressure device 50 that controls the air pressure in each of the plurality of chambers. The pressure device 50 includes a first pressure device 51 and a second pressure device 52. The first pressure device 51 controls the air pressure in the second chamber 210 and the third chamber 220, respectively. The second pressure device 52 controls the air pressure in the first chamber. The pressure device 50 also controls the air pressure in the plurality of chambers of the bonding device 20. The plurality of arrow symbols input / output from the pressure device 50 described in FIG. 1 correspond to the same arrow symbol corresponding to each of the plurality of chambers described in FIG. Details of the control of the air pressure in each chamber will be described later. An air pressure that is lower in absolute value than atmospheric pressure (1 atm; about 1 kgf / cm 2) is defined as negative pressure. Vacuum (0 atm) is also part of the negative pressure region. An air pressure that is greater in absolute value than atmospheric pressure (1 atm) is defined as positive pressure.

As an example of the present invention, the growth substrate 13 and the thin film 14 have a heteroepitaxial relationship, for example, and the lattice constants of the two are different. Therefore, it has a cleavage property. Examples of single crystal substrates include sapphire and silicon-based semiconductors such as silicon Si. In addition, there are gallium nitride GaN as a nitride semiconductor, silicon carbide Sic, gallium arsenide GaAs, and the like as compound semiconductors. These materials can be selected. The thin film 14 is a layer epitaxially grown from the growth substrate 13. The thin film 14 has a thickness (layer thickness) of about submicron to 10 microns (μm). A thin film obtained by epitaxially growing gallium nitride GaN on a sapphire substrate (growth substrate) may also be used. A product substrate 160 to be described later can be selected in the same manner as the material of the growth substrate 13. The product substrate 160 is about 10 to 500 microns thicker than the thickness of the thin film 14 by 10 times or more.

1, the bonding apparatus 20 has a mechanism and a structure for transferring the peeled thin film 14 to a transfer material 23. The thin film support 15 has the thin film 14 adsorbed to the thin film holder 16 in the peeling apparatus 10, and is transferred to the transfer material 23 in the bonding apparatus 20. The joining device 20 includes a transfer holder 22 that holds the transfer material 23. The joining device 20 includes a transfer support 21 that supports the transfer holder 22. The transfer support 21 is fixed to the housing 40 (the fixing location is not shown). The bonding apparatus 20 includes a first slider 130 that supports the thin film support 15. The thin film support 15 is detachably connected to the transfer support 21 via the first slider 130.

The joining apparatus 20 includes three chambers. The fourth chamber 300 is a space formed by the transfer support 21, the thin film support 15, and the first slider 130. The fifth chamber 310 is a space formed by the transfer support 21, the transfer material 23, and the transfer holder 22. The third chamber is a space formed by the thin film support 15 and the thin film holder 16. In the fourth chamber 300, the transfer material 23 and the thin film holder 16, and the transfer holder 22 and the thin film 14 are arranged.

The pressure device 50 controls the air pressure in the plurality of chambers. The first pressure device 51 controls the air pressure in the third chamber 220. Details of the control of the air pressure in the third chamber 220 will be described later.

The joining device 20 includes a gas pressure gauge 120. The gas pressure gauge 120 monitors the gas pressure in the fifth chamber 310.

FIG. 2 is an enlarged view of the peeling apparatus 10. In the peeling apparatus 10, the substrate support 11 is disposed on the ground E side and the thin film support 15 is disposed on the top side with respect to the ground E that is the gravity direction G. The peeling apparatus 10 of FIG. 2 further discloses a plurality of other parts not shown in FIG. The peeling apparatus 10 includes a first sealing material 60, a third sealing material 62, and a second sealing material that seal the air pressure of each of the plurality of chambers (first, second, and third chambers). The sealing material 61 is included. The peeling apparatus 10 includes a heater 90 that elastically deforms the substrate holder 12 by heating the substrate holder 12. The peeling apparatus 10 has an infrared local heater 91. The peeling apparatus 10 has an ultrasonic flaw detector 81. The peeling apparatus 10 has a camera 170. The peeling apparatus 10 has an acoustic emission measuring device 80. By gradually bending the substrate holder and the growth substrate 13 by the heater 90, an external force is applied to the periphery of the growth substrate 13 and the interface between the growth substrate 13 and the thin film 14 in a concentrated manner. An infrared local heater 91 such as a laser may be added to the side surface of the growth substrate 13 near the thin film 14. An ultrasonic impact may be applied to the boundary surface between the growth substrate 13 and the thin film 14 by the ultrasonic flaw detector 81. These parts cause cleavage around the thin film 14. The camera 170, the acoustic emission measuring device 80 and the ultrasonic flaw detector 81 are used to monitor the cleavage and its location and the degree of cleavage. The acoustic emission measuring device 80 monitors a phenomenon in which elastic energy stored therein is released as a sound wave when a material is deformed or broken by a piezoelectric element sensor or the like. A control device (not shown) controls the heater 90 and the like based on these monitor values. The peeling apparatus 10 connects a connector 70 that movably connects the substrate support 11 and the thin film support 15, a connector 72 that connects the thin film support 15 and the thin film holder 16, and connects the substrate support 11 and the substrate holder 12. Connector 71 is provided. The connector 71 has a characteristic that flexibly corresponds to the curvature of the substrate holder 12.

FIG. 2 discloses the deformation amount Z1 of the thin film support 15. Z1 is deformed (indicated by a dotted line) to the top side (the side opposite to the gravity direction G). The deformation amount Z1 is about 0.3 mm to 0.5 mm. Since the thin film holder 16 is also connected to the deformed portion 17 of the thin film support 15 by the connector 72, the same effect as the deformation amount Z1 can be obtained. The peeled thin film 14 is attached to the thin film holder 16 together with the negative pressure effect of the third chamber 220 and moves to the top side. The thin film support 15 is, for example, stainless steel.

FIG. 2 discloses that the optimum air pressure is supplied from the pressure device 50 to each of the three chambers (first, second, and third chambers). A first air pressure higher than the atmospheric pressure (about 1 kgf / cm 2) (a positive pressure having an absolute value larger than the atmospheric pressure) is applied to the first chamber 200. Preferably, 1.5 to 3 atmosphere pressures are applied. The deformation portion 17 of the thin film support 15 includes the air pressure (1.5 to 3.0 air pressure) in the first chamber and the corresponding air pressure outside the thin film support 15 (for example, atmospheric pressure = 1 atm). It is deformed by the differential air pressure (0.5 to 2.0 air pressure). The air pressure outside the thin film support 15 may be controlled by the pressure device 50. By controlling the outside air pressure, a wide range of differential air pressures can be controlled. A second air pressure lower than atmospheric pressure (a negative pressure smaller in absolute value than atmospheric pressure) is applied to the second chamber 210. Preferably, zero air pressure (vacuum) is applied. A third air pressure lower than atmospheric pressure (a negative pressure smaller in absolute value than atmospheric pressure) is applied to the third chamber 220. Preferably, 0 to 0.8 air pressure (vacuum) is applied. The thin film 14 peeled off by the negative pressure is sucked into the third chamber. A differential air pressure between the first air pressure and the third air pressure is applied to both surfaces of the thin film 14 after the cleavage is started. By setting the differential pressure to at least 1.1 atm or higher, the degree of adsorption between the thin film 14 and the thin film holder 16 being peeled is increased, and the degree of adhesion between the growth substrate 13 and the substrate holder 12 is increased. This increases the degree of peeling of the thin film 14 being peeled. As a result, an increase in the peeling time can be expected. Furthermore, the quality improvement of the thin film 14 can be expected by controlling the setting of the differential pressure. Further, the control range of the outside air pressure expands the setting range of the differential air pressure from the third air pressure, and the setting range of the deformation amount of the deformation portion 17 of the thin film support 15 is expanded. That is, by the combination of the first air pressure in the first chamber 200, the third air pressure in the third chamber 220, and the outside air pressure, the peeling time of the thin film 14, the quality improvement of the thin film, and the deformation portion 17 Each setting range of the deformation amount can be arbitrarily set. Further, a thin film is obtained by a combination of a thermal impact by the heater 90 or the infrared local heater 91 or an acoustic impact (mechanical impact) by the ultrasonic flaw detector 81 and the first air pressure in the first chamber 200. The setting range for each of the 14 peeling times and the quality improvement of the thin film can be arbitrarily set.

FIG. 3 is a diagram illustrating a state of the peeling apparatus 10 when it is not heated. FIG. 4 is a diagram illustrating a state of the peeling apparatus 10 during heating. The substrate holder 12 has a plurality of holes 24 penetrating therethrough. The growth substrate 13 is sucked by the negative pressure in the second chamber 210. The thin film holder 16 has a plurality of holes 25 penetrating therethrough. The thin film holder 16 includes two layers of a porous metal pad 100 and a carbon nano pad 101 that are stacked on each other. The peeled thin film 14 is adsorbed by the negative pressure of the third chamber 220 through the thin film holder 16 (including the porous metal pad 100 and the carbon nano pad 101). The thickness of the thin film holder 16 having the plurality of holes 25 is 5 mm. The plurality of holes 25 of the thin film holder 16 are arranged with 2 mm holes (2 mm diameter) developed on the array in units of 4 mm. The thickness of the portion of the porous metal pad 100 having the plurality of holes 25 is 1.5 mm. The plurality of holes 25 of the porous metal pad 100 are arranged so that 20-micron holes (20 μm diameter) are developed on the array in units of 50 microns. As will be described later, the carbon nano pad 101 composed of fibrous microfibers or nanofibers has a plurality of micropores in micrometer units (μm unit diameter) or nanometer units (nm unit diameter). The thin film holder 16 and the porous metal pad 100 are preferably conductive. Electrostatic breakdown of the thin film 14 that occurs during peeling can be prevented. The thin film holder 16 and the carbon nano pad 101 are arranged so as to sandwich the porous metal pad 100. The thin film holder 16 is selected from aluminum or an alloy thereof, brass, steel, stainless steel and the like. The porous metal pad 100 is selected from copper, aluminum, or an alloy containing the same as the main component, and is preferably a material having good heat conduction. The carbon nano pad 101 is preferably a material composed of fibrous microfibers or nanofibers. The shape can be selected from a pad, a sheet, and a cloth. It can be selected from microfiber carbon nano tube, carbon nano fiber, carbon fiber blended cellulose nano fiber containing carbon powder, etc. These have excellent properties such that the linear thermal expansion coefficient is as small as that of glass fiber and the elastic modulus is higher than that of glass fiber. An improvement in the quality of the thin film 14 can be expected.

The state of the peeling apparatus 10 when not heated in FIG. 3 will be described. There is a gap Z3 of about 0.1 mm between the thin film 14 and the thin film holder 16 (including the porous metal pad 100 and the carbon nano pad 101). As disclosed in FIG. 2, the gas Gas is supplied to the first chamber 200. As the gas Gas, dry air Air, nitrogen N2 as an inert gas, and hydrogen H2 (hydrogen molecule) as an activation gas can be selected. The Bohr radius αb = 0.0529 nm of the hydrogen atom is the smallest among the atoms. The lattice constant of gallium nitride GaN is 0.539 nm, which is sufficient to allow hydrogen to pass through. The lattice constant of silicon Si is 0.5431 nm. The defect lattice further accelerates hydrogen diffusion. Hydrogen H2 enters the separation region (buffer layer) having a different number of lattices in the region where the surface of the growth substrate 13 and the surface of the separation film 14 are in contact with each other through the gap Z3 and the thin film 14. Spread. The smaller the Bohr radius of an atom, the larger the diffusion coefficient. As a result, hydrogen H2 penetrates into the lattice in the separation region, thereby further increasing the degree of defects. Hydrogen H2 accelerates the start time of cleavage when the thin film 14 peels from the growth substrate 13. Furthermore, since the end time for completing the cleavage is advanced, the time during the cleavage period can be shortened. Further, the gas Gas supplied to the first chamber 200 may be helium He. Alternatively, the gas Gas supplied to the first chamber 200, an atom or molecular gas having a Bohr radius smaller than the Bohr radius of the thin film, and another gas may be mixed. Note that the gap Z3 of 0.1 mm or less acts in the direction of canceling the deformation amount Z1 (0.3 mm to 0.5 mm) of the thin film support 15 from the viewpoint of the adsorption performance of the thin film 14 to the thin film holder 12. However, it can be covered by controlling the setting of the differential pressure described above. It is also possible to supply nitrogen N2 instead of hydrogen H2. In addition, when supplying dry air Air instead of hydrogen H2, gap Z3 can also be 0.0 mm.

The gas Gas supplied to the first chamber 200 is hydrogen H 2, but may be hydrogen atoms H generated by platinum or palladium catalysis in the chamber. Further diffusion is accelerated than the diffusion of the hydrogen molecule H2. The gas Gas having a Bohr radius smaller than the lattice constant of the growth substrate 13 and the release film 14 can be expected to shorten the release time of the thin film 14.

It should be noted that the first chamber 200 in the manufacturing apparatus 1 or the peeling apparatus 10 may be provided with a carrier for carrying a supported catalyst at the time of hydrogenation, for example. The metals used as the catalyst are platinum Pt black (black powdery platinum), palladium Pd black (subsurface with intense irregularities on the submicron level), palladium Pd-C (ultrafine Pd metal on activated carbon). Can be selected. As the carrier, zeolite is preferable. The hydrogen molecule H2 is changed to two hydrogen atoms 2H (deuterium), and further diffusion acceleration can be expected. When the carrier is provided in the manufacturing apparatus 1, the carrier is preferably provided in the gas Gas supply mechanism shown in FIG. When the carrier is provided in the first chamber 200, it is preferably provided movably between the thin film holder 16 and the thin film 14 (gap Z3) shown in FIG. Prior to the step of heating the substrate holder 12, the movable carrier separates from the gap Z3.

FIG. 4 illustrates the state of the peeling apparatus 10 during heating. The substrate holder 12 and the growth substrate 13 are heated to 200 degrees Celsius or less by the heater 90 and gradually bend. As a result, cleavage begins from the periphery of the growth substrate 13 to generate a gap Z2. The gap Z <b> 2 means peeling of the thin film 14 from the growth substrate 13.

FIG. 5 is an enlarged cross-sectional view of the thin film support 15. The thicknesses of the deformable portion 17 and the cutout portion 18 and the thin film support 15 are disclosed. The stainless steel thin film support 15 has a basic thickness t0 of stainless steel (standard thickness of a portion that does not deform). The deformed portion 17 includes a thickness t1 to t4 that is smaller than t0 (where t2 indicates a gap that is the width of the groove). The thicknesses of the plurality of thicknesses t1 to t4 are indicated by inequality signs as follows (t4 <t3 <t2 <t1). The notch 18 includes the thinnest thickness t4. The notch 18 is disposed outside the second seal material 61. That is, the notch 18 is disposed corresponding to the first chamber 200. The notch 18 is arranged corresponding to the outside of the thin film support 15. The notch 18 is a hole, groove, stepped portion or the like formed by cutting a part of the stainless material in the thickness direction. That is, it is the place where concentrated stress is most likely to appear. The notch 18 has two grooves. As the structure of the deformed portion, the most effective structure for the deformation amount Z1 (0.3 mm to 0.5 mm) is the groove depth corresponding to t0-t4 (in the Y-axis direction in FIG. 5) and t2. The width of the corresponding groove (X-axis direction in FIG. 5). The region 19 of the deformed portion 17 shown in FIG. 5 is approximately 200 mm in diameter. Therefore, the diameters of the thin film holder 16 and the thin film 14 and the growth substrate 13 are smaller than 200 mm. For example, t0 = 10 mm, t1 = 6 mm, t2 = 5 mm, t3 = 4 mm, and t4 = 2 mm are preferable.

FIG. 6 is a top view of the thin film support 15. FIG. 6 discloses the shape of the notch 18 around the cavity that supplies air pressure to the third chamber 220. The notch 18 in FIG. 6 shows a circle. The thin film support 15 in FIG. 6 corresponds to the shape of the wafer-shaped growth substrate 13 such as silicon and the shape of the thin film 14 corresponding to the wafer shape. The shape of the product substrate 160 also corresponds to the wafer shape. FIG. 7 is a top view showing a thin film support 15A which is a modification of the thin film support 15 of FIG. Hereinafter, only differences from FIG. 6 will be described with reference to FIG. The notch 18A in FIG. 7 shows a rectangle. 7 corresponds to the shape of the rectangular growth substrate 13 such as a display and the shape of the thin film 14 corresponding to the rectangular shape. The shape of the product substrate 160 also corresponds to the rectangular shape. That is, it relates to the shape of the electronic component. Note that the region 19A in FIG. 7 corresponds to the region 19 in FIG.

8 to 10 are enlarged sectional views of the thin film supports 15B, 15C, and 15D, each having a structure different from that shown in FIG. 8 to 10, the same elements as those in FIG. 5 are denoted by the same reference numerals, and redundant description is omitted. 8 to 10 disclose the thicknesses of the deformed portions 17B, 17C, and 17D and the thin film supports 15B, 15C, and 15D, respectively. In FIG. 8, a stainless steel thin film support 15B has a basic thickness t5 of stainless steel. Deformed portion 17B includes a thickness t6 that is less than t5. The thicknesses of the plurality of thicknesses t5 and t6 are indicated by inequality signs. In this structure, a stainless steel material having a thickness of t6 is bent. In FIG. 9, a stainless steel thin film support 15C has a basic thickness t7 of stainless steel. The deformed portion 17C includes a thickness t8 to t10 that is thinner than t7. The thicknesses of the plurality of thicknesses t7 to t10 are indicated by inequality signs as follows (t10 <t9 <t8 <t7). The deformed portion 17C has a structure with thicknesses t8 to t10 that gradually become thinner. In FIG. 10, a stainless steel thin film support 15D has a basic thickness of stainless steel. Deformation part 17D contains thickness t11 and t12 thinner than basic thickness, and includes spring 110 which is an elastic body. The thicknesses of the plurality of thicknesses t11 and t12 are indicated by inequality signs as follows (t12 <t11). The deformation portion 17D has a structure in which a deformation amount Z1 is obtained by a combination of the thicknesses t11 and t12 and the spring 110. The spring 110 is an example of an elastic body.

11 and 12 disclose a cross-sectional view of the bonding apparatus 20 including the thin film support 15. The joining device 20 includes an up-and-down mechanism 140 that moves the transfer support 21 up and down along the vertical direction (gravity direction G). The joining apparatus 20 includes a thin film support 15 and a first slider 130 with respect to the transfer support 21 and includes a bearing 131 that slides them along the top-and-bottom direction (gravity direction G). FIG. 11 shows a first state in which the thin film support 15 having the peeled thin film 14 adsorbed to the thin film holder 16 is set on the transfer support 21. FIG. 12 shows a second state in which the transfer support 21 is raised in the top direction by the vertical mechanism 140 and the thin film 14 and the transfer material 23 are in contact with each other. The distance between the thin film 14 and the transfer material 23 is monitored by the camera 170 and the vertical mechanism 140 is controlled. After the distance between the thin film 14 and the transfer material 23 reaches a predetermined value, the thin film 14 is transferred to the transfer material 23 by controlling the air pressure in the third chamber 220 from negative pressure to positive pressure. The gas pressure gauge 120 indirectly monitors the transfer state by monitoring the gas pressure in the fifth chamber 310, and controls the gas pressure in the third chamber 220 or the vertical mechanism 140. A supply port for adjusting the air pressure in the fourth chamber 300 is not shown. The supply port is connected to the pressure device 50. The pressure device 50 adjusts the air pressure in the fourth chamber 300 when the transfer support 21 moves upward. Further, the air pressure in the fourth chamber 300 can be correlated with the air pressure in the third chamber 220. For example, the thin film 14 is transferred to the transfer material 23 by controlling the air pressure in the third chamber 220 from negative pressure to positive pressure. At that time, the air pressure in the fourth chamber 300 is controlled to a negative pressure. This can be expected to improve transfer quality and transfer speed. Note that the air pressure in the fourth chamber 300 and the air pressure in the third chamber 220 can be controlled only by negative pressure. The differential air pressure between the air pressure in the fourth chamber 300 and the air pressure in the third chamber 220 at the time of transfer is important. The transfer material 23 is preferably a transfer material that can be adsorbed and peeled and has a fibrous structure in which carbon nanotubes or graphene are arranged in a direction perpendicular to the support on a film-like or tape-like support (base material). The transfer material 23 adsorbs the thin film 14 by van der Waals force acting between atoms and molecules without using an adhesive. Therefore, the transfer material 23 can prevent the thin film 14 from being contaminated. The conductive transfer material 23 prevents electrostatic breakdown of the thin film 14. Therefore, the transfer material 23 can improve the quality of the thin film 14. The transfer material 23 can be reused. Therefore, the transfer material 23 is useful for cost reduction. It is also possible to select a transfer material 23 that can be adsorbed and peeled and has a micro level suction cup function on a film-like or tape-like support (base material) and can be reused. The transfer material 23 can be replaced with a product substrate (sapphire, silicon Si, gallium nitride GaN, silicon carbide Sic, gallium arsenide GaAs, or the like).

FIGS. 13 and 14 disclose cross-sectional views of the bonding apparatus 20 including the second thin film support 115. The bonding apparatus 20 includes a second thin film support 115 instead of the thin film support 15 of FIGS. 11 and 12. The joining device 20 includes a second thin film support 115 and a second slider 150 with respect to the transfer support 21, and has a bearing that slides them along the top-and-bottom direction (gravity direction G). The bonding apparatus 20 includes a second thin film support 115, a second transfer material 123, and a second thin film holder 116. The second thin film holder 116 is sandwiched and supported by the connector between the second thin film support 115 and the second slider 150. The second slider 150 has a hole 151 that passes therethrough. The second transfer holder 122 is controlled to a negative pressure by the pressure device 50 through the hole 151 and is attracted to the second slider 150. The bonding apparatus 20 including the second thin film support 115 includes a sixth thin film support 115, a second slider 150, a second transfer holder 122, and a second transfer material 123. It has a chamber 320. The second thin film holder 116 is disposed in the sixth chamber 320. The second thin film support 115 has a hole 153. For example, the first pressure device 51 (see FIG. 1) included in the pressure device 50 controls the air pressure in the sixth chamber 320 through the hole 153. The fourth chamber 300 is formed by the transfer support 21, the second slider 150, the second transfer holder 122, and the second transfer material 123. The manufacturing apparatus 1 includes a second thin film support transport mechanism 230 that allows the second thin film support 115 to be attached to and detached from the bonding apparatus 20. The second thin film support transport mechanism 230 includes a second thin film support moving member 231. The second thin film support 115 is connected to the second thin film support moving material 231.

FIG. 13 shows a first state in which the second thin film support 115 is set on the transfer support 21. The first state is the state of the thin film 14 bonded to the transfer material 23 as shown in FIG. FIG. 14 shows a second state in which the transfer support 21 is raised in the top direction by the vertical mechanism 140 and the thin film 14 and the second transfer material 123 are in contact with each other. The distance between the thin film 14 and the second transfer material 123 is monitored by a camera (not shown), and the vertical mechanism 140 is controlled. After the distance between the thin film 14 and the second transfer material 123 reaches a predetermined value, the air pressure in the sixth chamber 320 is controlled from negative pressure to positive pressure through the hole 153 provided in the second thin film support 115. Then, the thin film 14 is transferred to the second transfer material 123. The gas pressure gauge 120 indirectly monitors the transfer state by monitoring the gas pressure in the fifth chamber 310 and controls the gas pressure in the sixth chamber 320 or the vertical mechanism 140. A supply port (a hole 153 provided in the second thin film support 115) for adjusting the air pressure in the sixth chamber 320 is connected to the pressure device 50. The pressure device 50 adjusts the air pressure in the sixth chamber 320 when the transfer support 21 moves upward. Furthermore, the air pressure in the fourth chamber 300 can be correlated with the air pressure in the sixth chamber 320. For example, the thin film 14 is transferred to the second transfer material 123 by controlling the air pressure in the sixth chamber 320 from negative pressure or atmospheric pressure to positive pressure. At that time, the air pressure in the fourth chamber 300 is controlled to a negative pressure. Thereafter, this can be expected to improve transfer quality and transfer speed. The air pressure in the fourth chamber 300 and the air pressure in the sixth chamber 320 are negative pressure only, negative pressure and atmospheric pressure, negative pressure and positive pressure, atmospheric pressure and positive pressure, or only positive pressure. It is also possible to control. The differential air pressure between the air pressure in the fourth chamber 300 and the air pressure in the sixth chamber 320 at the time of transfer is important. The second transfer material 123 is preferably a transfer material that can be adsorbed and peeled and has a fibrous structure in which carbon nanotubes or graphene are arranged in a direction perpendicular to the support on a film-like or tape-like support (base material). . The second transfer material 123 adsorbs the thin film 14 by van der Waals force acting between atoms and molecules without using an adhesive. Therefore, the second transfer material 123 can prevent the thin film 14 from being contaminated. The second transfer material 123 having conductivity prevents electrostatic breakdown of the thin film 14. Therefore, the second transfer material 123 can improve the quality of the thin film 14. The second transfer material 123 can be reused. Therefore, the second transfer material 123 is useful for cost reduction. By making the adsorption force of the second transfer material 123 larger than the adsorption force of the transfer material 23, the transfer of the thin film 14 from the transfer material 23 to the second transfer material 123 can be easily realized. It is also possible to select a second transfer material 123 that can be adsorbed and peeled off and reusable with a suction function at a micro level on a film-like or tape-like support (base material). The second transfer material 123 can be replaced with a product substrate (sapphire, silicon Si, gallium nitride GaN, silicon carbide Sic, gallium arsenide GaAs, or the like).

15 to 19 disclose the first to fifth states of the thin film handled by the manufacturing apparatus (FIGS. 2 to 14) of the present invention. FIG. 15 shows a state in which the growth substrate 13 and the thin film 14 are loaded on the peeling apparatus 10 of FIG. The thin film 14 has an A surface and a B surface opposite to the A surface and corresponding to the surface of the growth substrate 13. For example, the A surface represents a P-type layer, and the B surface represents an N-type layer. For example, the second compound semiconductor InAsxP1-x (x = 0.05, 0.10, 0.15, 0.20, 0.25, 0.30) on the first compound semiconductor InP substrate (growth substrate). When a plurality of composition gradient layers (a plurality of thin films) are sequentially formed, the A plane is the first layer (final layer; x = 0.30; InAs0.30P0.70), and the B plane is the second layer ( x = 0.05; InAs0.05P0.95). For example, in a group III-V nitride-based semiconductor epitaxial wafer in which GaN, AlN, InN, and mixed crystals of these are sequentially stacked and grown on a sapphire growth substrate in an optimum structure, the A plane is AlGaN. The layers and intermediate layers are GaN layers, and the B surface is an AlGaN layer.

FIG. 16 shows a state in which the thin film 14 is held by the thin film holder 16 in the peeling apparatus 10. The A plane and the B plane are inverted with respect to FIG. FIG. 17 shows a state in which the thin film 14 is transferred to the transfer material 23 in the bonding apparatus 20. The A side and the B side are forwardly rotated with respect to FIG. FIG. 18 shows a state in which the thin film 14 is transferred to the second transfer material 123 in the bonding apparatus 20. The A plane and the B plane are inverted with respect to FIG. FIG. 19 shows a state where the thin film 14 has been transferred to the product substrate 160. The A side and the B side are forwardly rotated with respect to FIG. According to the device structure standard (for example, FIG. 19; 1st device structure standard) containing the thin film 14 which the semiconductor device mounted in an electronic device requires, A surface and B surface can be selected suitably. The device structure shown in FIG. 16 or FIG. 18 to FIG. 19 can be realized. When the second device structure reference is the reverse of the structure reference of the first device, the device structure opposite to the A and B surfaces in FIG. 19 can be realized from FIG.

FIG. 20 is a modification of the peeling apparatus 10 disclosed in FIGS. 2 and 3. In the peeling apparatus 10A disclosed in FIG. 20, the substrate holder 12 and the thin film holder 16 are upside down with respect to FIG. Further, the thin film holder 16 adsorbs and holds the third transfer material 124 through the holes 25. The thin film 14 is transferred to the third transfer material 124. In other words, the thin film 14 is indirectly held by the thin film holder 16 through the adsorbed third transfer material 124. In contrast, the thin film holder 16 of FIG. 3 directly sucks and holds the porous metal pad 100, the carbon nano pad 101, and the thin film 14. The peeling apparatus 10A disclosed in FIG. 20 uses gravity when the thin film 14 is peeled off from the growth substrate 13 and transferred to the third transfer material 124. When the first chamber 200 is controlled to atmospheric pressure, the gravity acts more effectively. The third transfer material 124 can be replaced with a product substrate (sapphire, silicon Si, gallium nitride GaN, silicon carbide Sic, gallium arsenide GaAs, or the like). Corresponding to the peeling device 10A disclosed in FIG. 20, the joining device 20 disclosed in FIG. In addition, 10 A of peeling apparatuses which FIG. 20 discloses are the figures explaining the state at the time of non-heating.

The substrate holder 12 of the peeling apparatus 10A disclosed in FIG. 20 is composed of a first metal 112 and a second metal 113, whereas the substrate holder 12 of FIG. Has bimetal. The first metal 112 and the second metal 113 have different expansion coefficients with respect to temperature. The bimetal can be replaced with the substrate holder 12 of FIG. Others are the same as described above.

FIG. 21 illustrates the state of the peeling apparatus 10A during heating in FIG. The substrate holder 12 and the growth substrate 13 are heated to 200 degrees Celsius or less by the bimetal composed of the first metal 112 and the second metal 113, and gradually bend. As a result, cleavage begins from the periphery of the growth substrate 13 to generate a gap Z2. The gap Z <b> 2 means peeling of the thin film 14 from the growth substrate 13. Others are the same as described above.

22 to 25 disclose the sixth to ninth states of the thin film handled by the manufacturing apparatus (FIGS. 20 and 21) of the present invention. FIG. 22 shows a state where the growth substrate 13 and the thin film 14 are loaded on the peeling apparatus 10A of FIG. Similarly to FIG. 15, the thin film 14 has an A surface and a B surface. FIG. 23 shows a state in which the thin film 14 is transferred to the third transfer material 124 in the peeling apparatus 10A. The A plane and the B plane are inverted with respect to FIG. FIG. 24 shows a state where the thin film 14 and the third transfer material 124 are unloaded from the peeling apparatus 10A (manufacturing apparatus 1). FIG. 25 shows a state where the back surface of the third transfer material 124 is polished. The third transfer material 124 is polished, and a part thereof becomes the product substrate 160. This is useful when the device structure standard including the thin film 14 required by the semiconductor device mounted on the electronic device is the above-mentioned second device structure standard (device structure opposite to the A and B surfaces in FIG. 19).

FIGS. 26 to 28 disclose the tenth to twelfth states of the thin film handled by the manufacturing apparatus of the present invention (the state where the thin film holder 16 of FIG. 20 is installed in the joining device 20 inverted in the vertical direction). . FIG. 26 shows a state where the state is shifted from the state of FIG. 23 to the bonding apparatus 20. Similarly to FIG. 23, the thin film 14 has an A surface and a B surface. FIG. 27 shows a state in which the thin film 14 is transferred to the fourth transfer material 125 in the bonding apparatus 20, and the thin film 14 and the fourth transfer material 125 are unloaded from the bonding apparatus 20 (manufacturing apparatus 1). State. The A plane and the B plane are inverted with respect to FIG. FIG. 28 shows a state where the back surface of the fourth transfer material 125 is polished. The fourth transfer material 125 is polished, and a part thereof becomes the product substrate 160. This is useful when the device structure standard including the thin film 14 required by the semiconductor device mounted on the electronic device is the above-mentioned first device structure standard (the device structures on the A and B surfaces in FIG. 19).

29 to 31 disclose a control method and steps of a manufacturing apparatus. FIG. 29 shows a macro viewpoint control method of the manufacturing apparatus. FIG. 30 shows a macro control method of the peeling apparatus. FIG. 31 shows a macro control method of the joining apparatus.

29, in step S100, the thin film support is installed in the peeling apparatus. Step S200 is a process of peeling the thin film on the growth substrate. In step S300, a thin film support that holds the peeled thin film is placed in the bonding apparatus. Step S400 is a bonding process for transferring the thin film to the transfer material.

30 corresponds to step S200. In FIG. 30, step S210 loads the growth substrate and the thin film onto the peeling apparatus. In relation to FIG. 20, the third transfer material 124 is placed on the thin film holder 16. Step S220 discloses control of the air pressure of each of the first to third chambers. Step S221 applies the air pressure of each of the second and third chambers. Includes negative pressure including vacuum, atmospheric pressure, and positive pressure greater than atmospheric pressure. Step S225 applies air pressure to the first chamber. Includes negative pressure, atmospheric pressure, and positive pressure greater than atmospheric pressure. Step S230 applies gas Gas to the first chamber. In addition, the order of step S220 and step S230 is not ask | required. In step S240, heat is applied to the substrate holder to deform the substrate holder.

The processing in FIG. 31 corresponds to step S400. In FIG. 31, in step S <b> 410, the thin film support holding the peeled thin film is installed in the bonding apparatus by the thin film support transport mechanism 30. Step S420 discloses a first bonding process for transferring the thin film to the transfer material 23 while controlling the air pressure and pressure gauges of the plurality of chambers formed in the bonding apparatus and the vertical mechanism. This process is performed by controlling the vertical mechanism and applying an air pressure (vacuum, positive atmospheric pressure) in the third chamber 220. In step S <b> 430, the second thin film support 115 is installed in the bonding apparatus 20 instead of the thin film support 15 by the second thin film support transport mechanism 230. As a result, the second transfer holder 122 is attracted to the second slider 150. In step S440, the thin film transferred to the transfer material 23 is further transferred to the second transfer material 123 while controlling the air pressure and pressure gauges of the plurality of chambers formed in the bonding apparatus and the vertical mechanism. A second joining process is disclosed. This process is performed by controlling the vertical mechanism and applying an atmospheric pressure (positive atmospheric pressure) in the sixth chamber 320. Steps S450 and S460 correspond to FIGS. 18 and 19 and transfer the thin film transferred to the second transfer material onto the product substrate. Note that FIGS. 15 to 19 and 22 to 25 described above correspond to the device structure standards (first and second device structure standards) including the thin film 14 required by the semiconductor device mounted on the electronic device. 26 and 28 to 28 can be reflected or incorporated in each step.

As mentioned above, although embodiment of this invention was described, this invention is not limited to embodiment mentioned above, In the range which does not deviate from the main point of this invention, it can implement with another various form. For example, the pressure device 50 can be provided with a plurality of pressure devices respectively corresponding to a plurality of chambers including the bonding device 20. For example, disclosed substrate supports, substrate supports, thin film holders, thin film supports, transfer supports, transfer supports, and the like, whether or not explicitly specified herein They can be combined as appropriate. The technical scope of the present invention is not limited to the above-described embodiments or combinations thereof, but extends to the matters described in the claims and equivalents or variations thereof.

Claims (47)

1. A substrate holder for holding a growth substrate for obtaining a thin film which is an epitaxial film;
   A substrate support for supporting the substrate holder;
   A thin film holder for holding the thin film peeled off from the growth substrate;
   A thin film support for supporting the thin film holder;
   A first chamber comprising the substrate support and the thin film holder;
   A second chamber by the substrate holder and the substrate support;
   A peeling device having a third chamber by the thin film holder and the thin film support;
   And a pressure device that applies first, second, and third air pressures respectively corresponding to the first, second, and third chambers.
2. The manufacturing apparatus according to claim 1, wherein an air pressure difference between the first and third air pressures is applied to the thin film.
3. The manufacturing apparatus according to any one of claims 1 and 2, wherein the thin film support includes a deforming portion that generates an elastic strain by the first air pressure.
4. 4. The manufacturing apparatus according to claim 3, wherein the deforming portion has a notch portion having a groove in a thickness direction of the thin film support.
5. The manufacturing apparatus according to any one of claims 3 and 4, wherein a thickness of the deforming portion is thinner than a thickness of an outer periphery of the deforming portion.
6. The manufacturing apparatus according to any one of claims 3 to 5, wherein the thin film holder is attached to the deformable portion.
7. The pressure difference between the first air pressure and the second air pressure, and the pressure difference between the first air pressure and the third air pressure are 1.3 atm to 3.0 atm, where atmospheric pressure is 1 atm. The manufacturing apparatus according to any one of claims 2 to 6, wherein:
8. The said 2nd and 3rd air pressure is a negative pressure lower than atmospheric pressure, and said 1st air pressure is a positive pressure higher than atmospheric pressure, The any one of Claim 2 to 6 characterized by the above-mentioned. The manufacturing apparatus according to item.
9. The manufacturing apparatus according to any one of claims 2 to 8, wherein dry air gas or nitrogen gas is supplied to the first chamber.
10. 9. The atom or molecular gas having a Bohr radius smaller than the Bohr radius of the growth substrate or the thin film is supplied to the first chamber. The manufacturing apparatus described in 1.
11. The manufacturing apparatus according to any one of claims 2 to 8, wherein at least hydrogen gas or helium gas is supplied to the first chamber.
12. The manufacturing apparatus according to any one of claims 9 to 11, wherein the semiconductor device or the first chamber further includes a carrier.
13. 10. The manufacturing apparatus according to claim 2, wherein the substrate holder further includes a heating unit.
14. The manufacturing apparatus according to claim 13, wherein the heating unit is a bimetal.
15. The said peeling apparatus further contains the 1st sealing material which maintains the said 1st air pressure between the said thin film support body and the said board | substrate support body. Manufacturing equipment.
16. The manufacturing apparatus according to claim 15, wherein the thin film support is detachable from the substrate support by the first sealing material.
17. The said peeling apparatus further contains the 2nd sealing material which maintains the said 3rd air pressure between the said thin film support body and the said thin film holding body. Manufacturing equipment.
18. The manufacturing apparatus according to claim 17, wherein the thin film holder is detachable from the thin film support by the second sealing material.
19. The said peeling apparatus further contains the 3rd sealing material which maintains the said 2nd air pressure between the said board | substrate support body and the said board | substrate holding body. Manufacturing equipment.
20. The manufacturing apparatus according to claim 19, wherein the substrate holder is detachable from the substrate support by the third sealing material.
21. The thin film holder has a plurality of first holes penetrating the thin film holder per predetermined unit area related to the region of the thin film, and further, the plurality of the plurality of first holes between the thin film and the thin film holder. 21. The manufacturing apparatus according to claim 1, further comprising a porous metal pad having a plurality of second through holes per predetermined unit area larger than the number of first holes.
22. The thin film holder further includes a plurality of carbon nano-pores having a plurality of third through holes per predetermined unit area larger than the number of the plurality of second through holes between the thin film and the porous metal pad. The manufacturing apparatus according to claim 21, comprising a pad.
23. The manufacturing apparatus according to any one of claims 1 to 14, wherein the substrate holder is disposed on an upper side of the thin film holder with respect to a direction of gravity.
24. The manufacturing apparatus according to any one of claims 1 to 14 and 23, wherein the thin film holder holds the thin film via a third transfer material.
25. 25. The manufacturing apparatus according to claim 24, wherein the third transfer material is a product substrate.
26. The manufacturing apparatus further includes a joining device,
    The joining device includes:
    The manufacturing apparatus according to claim 1, further comprising a transfer support that is detachable from the thin film support and supports a transfer material that transfers the thin film held by the thin film support.
27. 27. The manufacturing apparatus according to claim 26, wherein at least one of the thin film support and the transfer support is movable so that a distance between the thin film support and the transfer support can be changed.
28. 28. The manufacturing apparatus according to claim 27, wherein the joining device further includes a first slider or a bearing between the thin film support and the transfer support.
29. 29. The manufacturing apparatus according to claim 27, wherein the other of the thin film support and the transfer support is movable so that a distance between each other can be changed.
30. 30. The manufacturing apparatus according to claim 29, wherein the joining device further includes a vertical mechanism for moving the transfer support.
31. The manufacturing apparatus according to any one of claims 26 to 30, wherein the third air pressure applied to the third chamber is a positive pressure higher than the atmospheric pressure.
32. The joining device includes:
    A fourth chamber with the thin film support and the transfer support;
    A fifth chamber by the transfer material and the transfer support;
    32. The manufacturing apparatus according to claim 26, further comprising a gas pressure gauge that measures a gas pressure in the fifth chamber.
33. The manufacturing apparatus according to any one of claims 26 to 32, wherein the transfer material is a product substrate.
34. The joining device includes:
    27. The method according to claim 26, further comprising a second thin film support that is detachable from the transfer support and supports a second transfer material that further transfers the thin film held on the transfer material. Manufacturing equipment.
35. 35. The manufacturing apparatus according to claim 34, wherein at least one of the second thin film support and the transfer support is movable so that a distance between them can be changed.
36. 36. The manufacturing apparatus according to claim 35, wherein the joining device further includes a second slider or a bearing between the second thin film support and the transfer support.
37. 37. The manufacturing apparatus according to claim 35, wherein the other of the second thin film support and the transfer support is movable so that the distance between them can be changed.
38. 38. The manufacturing apparatus according to claim 37, wherein the joining device further includes a vertical mechanism for moving the transfer support.
39. The manufacturing apparatus according to claim 34, wherein the bonding apparatus includes a sixth chamber made of the second thin film support and the second transfer material.
40. 40. The manufacturing apparatus according to claim 39, wherein the pressure device further applies a fourth air pressure that is a positive pressure higher than an atmospheric pressure to the sixth chamber.
41. The bonding apparatus further includes a second thin film holder disposed between the second thin film support and the second transfer material and disposed in the sixth chamber. 40. The manufacturing apparatus according to claim 39.
42. The bonding apparatus further includes a second thin film holder that holds the second transfer material and is disposed between the second thin film support and the second transfer material. The manufacturing apparatus according to claim 35.
43. 43. The manufacturing apparatus according to claim 42, wherein the joining apparatus further includes a second slider disposed between the second thin film support and the second thin film holder.
44. 44. The manufacturing apparatus according to claim 43, wherein the second slider has a through hole that holds the second thin film holder by an air pressure supplied from the pressure device.
45. The manufacturing apparatus according to any one of claims 34 to 44, wherein the second transfer material is a product substrate.
46. The manufacturing apparatus further includes a thin film support transport mechanism,
    27. The manufacturing apparatus according to claim 26, wherein the thin film support transport mechanism includes a thin film support moving member that transports the thin film support between the peeling device and the bonding device.
47. The manufacturing apparatus further includes a second thin film support transport mechanism,
    35. The second thin film support transport mechanism includes a second thin film support moving material that transports the second thin film support between the peeling device and other devices. The manufacturing apparatus as described.

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