WO2016138506A3 - Multi-wavelength laser - Google Patents

Multi-wavelength laser Download PDF

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Publication number
WO2016138506A3
WO2016138506A3 PCT/US2016/019987 US2016019987W WO2016138506A3 WO 2016138506 A3 WO2016138506 A3 WO 2016138506A3 US 2016019987 W US2016019987 W US 2016019987W WO 2016138506 A3 WO2016138506 A3 WO 2016138506A3
Authority
WO
WIPO (PCT)
Prior art keywords
less
semiconductor
laser
wavelength laser
lasing
Prior art date
Application number
PCT/US2016/019987
Other languages
French (fr)
Other versions
WO2016138506A2 (en
Inventor
Yi Zhang
Shuyu Yang
Michael J. Hochberg
Thomas Wetteland BAEHR-JONES
Original Assignee
Coriant Advanced Technology, LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/634,699 external-priority patent/US9450379B2/en
Application filed by Coriant Advanced Technology, LLC filed Critical Coriant Advanced Technology, LLC
Publication of WO2016138506A2 publication Critical patent/WO2016138506A2/en
Publication of WO2016138506A3 publication Critical patent/WO2016138506A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Abstract

A hybrid multi-wavelength laser using an optical gain element, such as a semiconductor optical amplifier (SOA), for example a QD RSOA, and a semiconductor, e.g. silicon, photonics chip is demonstrated. A plurality, e.g. four, lasing modes at a predetermined, e.g. 2 nm, spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10-9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.
PCT/US2016/019987 2015-02-27 2016-02-27 Multi-wavelength laser WO2016138506A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/634,699 2015-02-27
US14/634,699 US9450379B2 (en) 2013-11-20 2015-02-27 Quantum dot SOA-silicon external cavity multi-wavelength laser

Publications (2)

Publication Number Publication Date
WO2016138506A2 WO2016138506A2 (en) 2016-09-01
WO2016138506A3 true WO2016138506A3 (en) 2016-10-13

Family

ID=56789815

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/019987 WO2016138506A2 (en) 2015-02-27 2016-02-27 Multi-wavelength laser

Country Status (1)

Country Link
WO (1) WO2016138506A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2710002C1 (en) * 2019-03-27 2019-12-23 Самсунг Электроникс Ко., Лтд. Compact device with lasers with multiple longitudinal modes, stabilized high-quality micro-resonators with generation of optical frequency combs
US11733455B2 (en) 2019-04-02 2023-08-22 The Trustees Of Columbia University In The City Of New York Amplitude and phase light modulator based on miniature optical resonators
US11005566B1 (en) * 2020-05-14 2021-05-11 Hewlett Packard Enterprise Development Lp Wavelength modulation to improve optical link bit error rate
CN114428379B (en) * 2020-10-29 2023-09-15 青岛海信宽带多媒体技术有限公司 Optical module
CN114584252B (en) * 2022-02-16 2023-09-19 暨南大学 Micro-ring resonance wavelength searching method combined with particle swarm algorithm
CN116826495B (en) * 2023-08-25 2023-11-03 山东弘信光学科技有限公司 Pulse Raman fiber laser with tunable and selectable multiple wavelengths

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7565084B1 (en) * 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
US20100014545A1 (en) * 2005-12-07 2010-01-21 Jie Hyun Lee Athermal external cavity laser
US20100296812A1 (en) * 2009-05-22 2010-11-25 Mehdi Asghari Multi-channel optical device
US20110310917A1 (en) * 2010-06-22 2011-12-22 Oracle International Corporation Multiple-wavelength laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7565084B1 (en) * 2004-09-15 2009-07-21 Wach Michael L Robustly stabilizing laser systems
US20100014545A1 (en) * 2005-12-07 2010-01-21 Jie Hyun Lee Athermal external cavity laser
US20100296812A1 (en) * 2009-05-22 2010-11-25 Mehdi Asghari Multi-channel optical device
US20110310917A1 (en) * 2010-06-22 2011-12-22 Oracle International Corporation Multiple-wavelength laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
YANG ET AL.: "Quantum dot semiconductor optical amplifier/silicon external cavity laser for O- band high-speed optical communications .", OPTICAL ENGINEERING, vol. 54, no. 2, 12 February 2015 (2015-02-12), pages 026102 - 1 -026102-4, XP060053948, Retrieved from the Internet <URL:http://lightwave.ee.columbia.edu/files/Yang2015.pdf> *
ZHANG ET AL.: "Sagnac loop mirror and micro-ring based laser cavity for silicon-on-insulator.", OPTICS EXPRESS, vol. 22, no. 15, 28 July 2014 (2014-07-28), pages 17872 - 17878, XP055320034, Retrieved from the Internet <URL:https://www.osapublishing.org/DirectPDFAccess/C22DD073-A140-7DD0-917F28006EAF7CEC_296121/oe-22-15-17872.pdf?da=1&id=296121&seq=0&mobile=no> *

Also Published As

Publication number Publication date
WO2016138506A2 (en) 2016-09-01

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