WO2016046997A1 - Method for manufacturing element-laminated film, element-laminated film, and display device - Google Patents

Abstract

Disclosed is a method for manufacturing an organic EL display device 1, said method having: a surface processing step, wherein a carrier substrate 7 is prepared, and an inorganic coating 72 is applied to an end portion 711 (first portion) of an upper surface 71 (main surface); a film-forming step, wherein a resin film A is formed by applying a resin solution to the upper surface 71, thereby obtaining a laminated body 8 (film-attached substrate); an element-forming step, wherein a pixel circuit 10 (element) is formed with respect to the resin film A, and a sealing layer 400 is formed; a cutting step, wherein the laminated body 8 is cut in the thickness direction such that a laminated body 8 portion corresponding to the end portion 711 is removed; and a peeling step wherein the carrier substrate 7 and the resin film A are separated from each other.

Description

Element laminated film manufacturing method, element laminated film, and display device

The present invention relates to a method for producing an element laminated film, an element laminated film, and a display device.

In a display device (electronic device) such as an organic EL display device or a liquid crystal display device, a substrate used for the display device needs to have transparency. For this reason, a substrate using a transparent resin film has been proposed as the substrate.

For example, in Patent Document 1, a liquid resin composition is applied on a carrier substrate to form a solid resin film, a circuit is formed on the resin film, and the resin film is peeled from the carrier substrate. And a method for manufacturing a flexible device that is a display device.

According to such a manufacturing method of a flexible device, a circuit including a thin film transistor necessary for a display device can be manufactured by forming a semiconductor layer, an electrode layer, or the like on a resin film (transparent resin film). . Moreover, since the thickness of the resin film (transparent resin film) to be formed can be easily reduced, the display device can be made thinner and lighter.

Incidentally, as a method for peeling the resin film on which the circuit is formed from the carrier substrate, Patent Document 1 proposes a method of irradiating the resin film with laser from the carrier substrate side. By irradiating the resin film with a laser, the resin film can be smoothly peeled from the carrier substrate at the interface between them.

JP 2010-202729 A

However, the laser irradiation apparatus is large and expensive, leading to an increase in manufacturing process costs. Further, when a semiconductor layer is irradiated with a laser, the semiconductor layer may be altered or deteriorated depending on the wavelength of the laser.

Furthermore, the adhesion force of the resin film to the carrier substrate is easily affected by the combination of the constituent materials. For this reason, depending on the combination, the adhesion may be significantly reduced. In such a case, in the manufacturing process of the flexible device, for example, there is a concern that the resin film may be peeled off from the carrier substrate simply by spraying the cleaning liquid onto the resin film.

An object of the present invention is to provide an element laminated film manufacturing method capable of efficiently producing an element laminated film without using a special device, an element laminated film produced by the element laminated film producing method, and the element laminated film It is in providing a display apparatus provided with a film.

Such an object is achieved by the present inventions (1) to (10) below.
(1) The substrate having a main surface including a first portion and a second portion, and the main force such that the adhesion force of the film to the first portion is greater than the adhesion force of the film to the second portion. A step of preparing a substrate with a film comprising a film provided in close contact with the surface;
Forming an element on the opposite side of the film from the substrate;
Cutting the substrate with film in the thickness direction so as to remove at least a part of the portion corresponding to the first portion of the substrate with film;
Separating the substrate and the film from each other to obtain an element laminated film;
A process for producing an element laminated film, comprising:

(2) The step of preparing the substrate with film includes
Applying a surface treatment to the first portion of the main surface;
Applying a resin solution on the main surface to form the film;
The manufacturing method of the element laminated | multilayer film as described in said (1) which has these.

(3) The method for producing an element laminated film according to (2), wherein the surface treatment is an inorganic coating treatment or a coupling agent treatment.

(4) The method for producing an element laminated film according to (2) or (3), wherein the constituent material of the substrate is glass.

(5) The method for producing an element laminated film according to (4), wherein the glass is soda glass or non-alkali glass.

(6) The method for manufacturing an element laminated film according to any one of (1) to (5), wherein the first portion is provided along an outer edge of the main surface.

(7) The method for manufacturing an element laminated film according to any one of (1) to (6), wherein the first part is provided so as to surround the second part.

(8) The element laminate film manufacturing method according to any one of (1) to (7), wherein the constituent material of the film is a polyamide-based resin.

(9) An element laminated film manufactured by the method for producing an element laminated film according to any one of (1) to (8).
(10) A display device comprising the element laminated film according to (9).

According to the present invention, since a film can be peeled off when necessary without using a special device such as a laser irradiation device, an element laminated film having a film and an element formed thereon can be efficiently used. Can be manufactured well.

Moreover, according to this invention, the element laminated film which does not have the bad influence by a laser is obtained.
Moreover, according to this invention, a display apparatus provided with the said element laminated film is obtained.

FIG. 1 is a longitudinal sectional view showing an organic EL display device which is an embodiment of the display device of the present invention. FIG. 2 is a block diagram showing a configuration of an active matrix device included in an organic EL display device which is an embodiment of the display device of the present invention. FIG. 3 is a longitudinal sectional view for explaining the method for manufacturing the organic EL display device shown in FIG. 1 (first embodiment of the method for manufacturing an element laminated film of the present invention). FIG. 4 is a longitudinal sectional view for explaining the method for manufacturing the organic EL display device shown in FIG. 1 (first embodiment of the method for manufacturing an element laminated film of the present invention). FIG. 5 is a longitudinal sectional view for explaining a method for manufacturing the organic EL display device shown in FIG. 1 (first embodiment of the method for manufacturing an element laminated film of the present invention). FIG. 6 is a plan view of the organic EL display device shown in FIG. FIG. 7 is a longitudinal sectional view for explaining another method for manufacturing the organic EL display device shown in FIG. 1 (second embodiment of the method for manufacturing an element laminated film of the present invention).

Hereinafter, a method for manufacturing an element laminated film, an element laminated film, and a display device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

First, prior to the description of the method for producing an element laminated film of the present invention, an organic electroluminescence display device (organic EL display device), which is an embodiment of a display device including the element laminated film, will be described.

<Organic EL display device>
FIG. 1 is a longitudinal sectional view showing an organic EL display device which is an embodiment of the display device of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

The organic EL display device 1 shown in FIG. 1 includes a resin film A, a plurality of light emitting elements C provided corresponding to each pixel, and a plurality of thin film transistors B that drive the corresponding light emitting elements C. is doing.

In the present embodiment, the organic EL display device 1 is a bottom emission structure display panel that extracts (transmits) the light emitted from the light emitting element C from the resin film A side.

On the resin film A, a plurality of thin film transistors B are provided corresponding to the plurality of light emitting elements C, and a planarization layer 301 made of an insulating material is formed so as to cover the thin film transistors B. .

Each thin film transistor B includes a gate electrode 200 formed on the resin film A, a gate insulating layer 201 provided so as to cover the gate electrode 200, and a source electrode 202 and a drain provided on the gate insulating layer 201, respectively. The electrode 204 includes a semiconductor layer 203 formed of a semiconductor material and corresponding to a channel region between the source electrode 202 and the drain electrode 204.

As the semiconductor material, for example, an oxide semiconductor material, an organic semiconductor material, or the like can be used in addition to a silicon-based material such as single crystal silicon, polysilicon, or amorphous silicon.

Examples of the oxide semiconductor material include at least oxygen (O) among nitrogen (N) and oxygen (O) which are nonmetallic elements, and boron (B), silicon (Si), and germanium (metalloid elements). Ge), arsenic (As), antimony (Sb), tellurium (Te), and polonium (Po), or metal elements such as aluminum (Al), zinc (Zn), gallium (Ga), zirconium Including at least one of (Zr), cadmium (Cd), indium (In), tin (Sn), hafnium (Hf), mercury (Hg), thallium (Tl), terbium (Pb) and bismuth (Bi) A semiconductor material is mentioned.

Of these, In—Ga—Zn—O (IGZO) materials, Zr—In—Zn—O materials, Hf—In—Zn—O materials, In—Si—O materials, In—Ga—O materials A material, an In—Sn—Zn—O-based material, an In—Al—Sn—Zn—O-based material, or the like is preferably used as the oxide semiconductor material.

Examples of the organic semiconductor material include low molecular organic semiconductor materials such as anthracene, tetracene or derivatives thereof, and polymers such as fluorene-bithiophene copolymer, fluorene-allylamine copolymer, or derivatives thereof. These organic semiconductor materials can be used, and one or more of these can be used in combination.

Further, a light emitting element (organic EL element) C is provided on the planarizing layer 301 corresponding to each thin film transistor B.

Furthermore, in this embodiment, the sealing layer 400 is formed so as to cover these light emitting elements C. Thereby, the airtightness of the light emitting element C is ensured, and intrusion of oxygen and moisture into the organic EL display device 1 can be prevented.

Note that the light-emitting element C according to this embodiment includes an anode 302 and a cathode 306, and a hole transport layer 303, a light-emitting layer 304, and an electron transport layer 305, which are sequentially stacked between the anode 302 and the cathode 306. With.

In addition, the anode 302 of each light emitting element C is electrically connected to the drain electrode 204 of each thin film transistor B through the conductive portion 300.

In the organic EL display device 1 having such a configuration, the plurality of light emitting elements C include a red light emitting element, a green light emitting element, and a blue light emitting element, and each light emitting element C using each thin film transistor B. If the amount of light emitted from each light emitting element C (light emission luminance) is adjusted by controlling the voltage applied to the organic EL display device 1, the organic EL display device 1 can perform full color display. Moreover, the organic EL display device 1 can also display in a single color by causing the light emitting elements C to emit light simultaneously.

Therefore, a desired image can be displayed on the organic EL display device 1 by individually driving the plurality of pixel circuits 10 each having the thin film transistor B and the light emitting element C.

Here, the thin film transistor B according to the present embodiment is provided in the vicinity of intersections of a plurality of data lines and a plurality of selection lines that are orthogonal to each other.

FIG. 2 is a block diagram showing a configuration of an active matrix device included in an organic EL display device which is an embodiment of the display device of the present invention. FIG. 1 corresponds to a vertical sectional view of the single pixel circuit 10 shown in FIG. 2 and the vicinity thereof.

The active matrix device 50 shown in FIG. 2 includes a plurality of data lines 51 and a plurality of selection lines 52 that are orthogonal to each other, and a plurality of pixel circuits 10 provided in the vicinity of their intersections. Although not shown, the gate electrode 200 included in each thin film transistor B is connected to the selection line 52, and the source electrode 202 is connected to the data line 51.

On the other hand, the organic EL display device 1 includes a signal processing circuit 55, a data driving circuit 53, and a row selection circuit 54 as shown in FIG.

When displaying an image on the organic EL display device 1, first, a video signal based on the image to be displayed is generated in a video signal generation circuit (not shown). Then, the generated video signal is input to the signal processing circuit 55. The signal processing circuit 55 generates a data signal and a selection signal based on the video signal, inputs the data signal to the data driving circuit 53, and inputs the selection signal to the row selection circuit 54.

Thereafter, the data drive circuit 53 sends a data signal to each data line 51 and the row selection circuit 54 sends a selection signal to each selection line 52. In each pixel circuit 10, the driving of each thin film transistor B is controlled based on these data signals and selection signals, and the light emission of the corresponding light emitting element C is controlled. Thereby, a desired image is displayed on the organic EL display device 1.

Each pixel circuit 10 is placed on a resin film A that is rectangular in plan view, as shown in FIG. On the other hand, the signal processing circuit 55, the data driving circuit 53 and the row selection circuit 54 are arranged outside the resin film A. In addition, these arrangement | positioning is not specifically limited, Each circuit may also be arrange | positioned on the resin film A.

Examples of the constituent material of the resin film A include various polymers such as polyimide resins, polyamide resins, polyamideimide resins, epoxy resins, acrylic resins, methacrylic resins, polyester resins, and polycarbonate resins. . Among these polymers, a polyamide resin is particularly preferably used as a constituent material of the resin film A. Hereinafter, the polyamide resin will be described in detail.

(Polyamide resin)
By using a polyamide-based resin, a resin film A having excellent chemical resistance can be obtained. Such a resin film A can suppress deterioration or deterioration due to an organic solvent or a processing gas when the pixel circuit 10 is formed thereon.

Further, the polyamide-based resin preferably includes a structure derived from a diamine containing a carboxyl group. The amount contained in the polyamide resin having a structure derived from a diamine containing a carboxyl group is preferably 30 mol% or less, more preferably 1 to 20 mol%, and more preferably 1 to 10 mol%. Is more preferable. By setting the amount of the structure derived from a diamine containing a carboxyl group in this way, the resin film A containing a polyamide-based resin can achieve both excellent chemical resistance and excellent optical properties.

Further, the polyamide-based resin is preferably a resin containing one or more of aromatic polyamide, semi-aromatic polyamide and alicyclic polyamide, and more preferably a resin containing aromatic polyamide. Such a polyamide-based resin can impart properties suitable for use in the organic EL display device 1 to the resin film A. That is, the polyamide-based resin provides the resin film A with sufficient chemical resistance that can withstand the manufacture of the pixel circuit 10 and optical characteristics that can realize excellent image quality in the organic EL display device 1. Can do.

The aromatic polyamide is preferably an aromatic polyamide containing one or more functional groups capable of reacting with an epoxy group. Further, the aromatic polyamide containing one or more functional groups capable of reacting with an epoxy group is more preferably an aromatic polyamide containing a carboxyl group. Since such an aromatic polyamide contains a carboxyl group, the solvent resistance of the formed resin film A can be improved. By improving the solvent resistance of the resin film A, the selection range of the liquid material used when forming the light emitting element C on the resin film A can be expanded.

Furthermore, the aromatic polyamide is preferably a wholly aromatic polyamide. Thereby, the chemical resistance and optical characteristic of the resin film A to be formed can be further enhanced. In addition, with the wholly aromatic polyamide, the amide bonds contained in the main skeleton are not connected by an aliphatic compound that is linear or cyclic, but are all connected by an aromatic compound (aromatic ring). Refers to polyamide.

Such an aromatic polyamide preferably has at least one of repeating units (monomer components) represented by the following general formulas (I) and (II), but more preferably has both.

(Wherein x represents mol% of the repeating structure (I), n represents an integer of 1 to 4, y represents mol% of the repeating structure (II), and Ar ₁ represents the following general formula Represented by formula (III) or (III ′),

[P = 4, R ₁ , R ₄ and R ₅ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro, cyano , Thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, substituted aryl such as aryl or aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₁ is a covalent bond, CH ₂ Group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, Pafuru B biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ],
Ar ₂ is represented by the following general formula (IV) or (V),

[P = 4, R ₁ , R ₄ and R ₅ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro, cyano , Thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, substituted aryl such as aryl or aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₁ is a covalent bond, CH ₂ Group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, Pafuru B biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ],
Ar ₃ is represented by the following general formula (VI) or (VII),

[T = 1 to 3, R ₉ , R ₁₀ and R ₁₁ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro , Cyano, thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, aryl, substituted aryl such as aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₃ is a covalent bond, CH ₂ group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH _{3) 2} group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, Pas Fluoro-biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ]).

In addition, with respect to the above-mentioned aromatic polyamide, in one or more embodiments of the present invention, the general formulas (I) and (II) are those in which the aromatic polyamide includes a polar solvent or one or more polar solvents. Selected to be soluble. In one or more embodiments of the present invention, x in the general formula (I) varies from 90.0 to 99.99 mol%, and y in the general formula (II) is from 10.0 to 0.01 mol%. It varies in the range. In one or more embodiments of the present invention, x in the general formula (I) varies from 90.1 to 99.9 mol%, and y in the general formula (II) ranges from 9.9 to 0.1 mol%. It varies in the range. In one or more embodiments of the present invention, x in the general formula (I) varies from 90.0 to 99.0 mol%, and y in the general formula (II) is from 10.0 to 1.0 mol. It varies in the range of%. In one or more embodiments of the present invention, x in the general formula (I) varies from 92.0 to 98.0 mol%, and y in the general formula (II) is from 8.0 to 2.0 mol%. It varies in the range. In one or more embodiments of the present invention, Ar ₁ , Ar ₂ , Ar ₃ in the plurality of repeating units represented by the general formulas (I) and (II) may be the same as or different from each other. It may be.

The aromatic polyamide preferably contains a rigid structure (rigid component) in an amount of 50 mol% or more, more preferably in an amount of 65 mol% or more, further preferably in an amount of 80 mol% or more, and 95 mol. It is particularly preferable to include it in an amount of% or more. By setting the amount of the rigid structure of the aromatic polyamide within such a range, the crystallinity of the aromatic polyamide is further improved. For this reason, the chemical resistance of the resin film A can be further improved.

In the present specification, the rigid structure refers to a monomer component (repeating unit) constituting an aromatic polyamide and having a linearity in its main skeleton. Specifically, examples of the rigid structure include a repeating unit represented by the above general formula (I) and a repeating unit represented by the above general formula (II), wherein Ar ₁ is represented by the following general formula (A ) Or (B),

[P = 4, R ₁ , R ₄ and R ₅ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro, cyano , Thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, substituted aryl such as aryl or aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₁ is a covalent bond, CH ₂ Group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, Pafuru B biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ],
Ar ₂ is represented by the following general formula (C) or (D),

[P = 4, R ₆ , R ₇ and R ₈ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro, cyano , Thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, aryl, substituted aryl such as aryl halide, alkyl ester, substituted alkyl ester, and combinations thereof, G ₂ is a covalent bond, CH ₂ Group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, perfluoro Biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ],
Ar ₃ is a repeating unit represented by the following general formula (E) or (F).

[T = 1 to 3, R ₉ , R ₁₀ and R ₁₁ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro , Cyano, thioalkyl, alkoxy, substituted alkoxy such as halogenated alkoxy, aryl, substituted aryl such as aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₃ is a covalent bond, CH ₂ group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH _{3) 2} group, 9,9-fluorene group is selected from the group consisting of substituted 9,9-fluorene, and OZO group, Z is a phenyl group, a biphenyl group, Pas Fluoro-biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene. ].

Further, specific examples of Ar ₁ include, for example, a structure derived from terephthaloyl dichloride (TPC), and specific examples of Ar ₂ include, for example, 4,4′-diamino-2,2 ′. -A structure derived from bistrifluoromethylbenzidine (PFMB: 4, 4'-Diamino-2, 2'-bistrifluoromethylbenzidine) is exemplified, and specific examples of Ar ₃ include, for example, 4,4'-diaminodiphenic acid (DADP). : 4,4'-diaminodiphenic acid), 4,4'-diaminodiphenyl sulfone (DDS), and 3,5-diaminobenzoic acid (DAB: 3, 5) -Diaminobenzoic acid).

The aromatic polyamide has a number average molecular weight (Mn) of preferably 6.0 × 10 ⁴ or more, more preferably 6.5 × 10 ⁴ or more, and 7.0 × 10 ⁴ or more. Is more preferably 7.5 × 10 ⁴ or more, and further preferably 8.0 × 10 ⁴ or more. In addition, the number average molecular weight is preferably 1.0 × 10 ⁶ or less, more preferably 8.0 × 10 ⁵ or less, and even more preferably 6.0 × 10 ⁵ or less. More preferably, it is 0 × 10 ⁵ or less. By using an aromatic polyamide that satisfies the above-described conditions, the resin film A can reliably exhibit its function as a base layer in the organic EL display device 1.

In the present specification, the number average molecular weight (Mn) and the weight average molecular weight (Mw) of the polyamide are measured by gel permeation chromatography (Gel Permeation Chromatography).

Furthermore, the molecular weight distribution (= Mw / Mn) of the aromatic polyamide is preferably 5.0 or less, more preferably 4.0 or less, and even more preferably 3.0 or less. It is more preferably 8 or less, more preferably 2.6 or less, further preferably 2.4 or less, and particularly preferably 2.0 or more. By using an aromatic polyamide that satisfies the above-described conditions, the resin film A can reliably exhibit its function as a base layer in the organic EL display device 1.

The aromatic polyamide is preferably obtained by synthesizing the aromatic polyamide and then undergoing a reprecipitation step. By using the aromatic polyamide obtained through the reprecipitation step, the resin film A can surely exhibit the function as the base layer in the organic EL display device 1.

(Production method of polyamide resin)
Next, an example of a method for producing the above-described polyamide resin will be described.

The above-described polyamide-based resin can be produced, for example, using a production method including the following steps (a) to (e).
In the following, a case where an aromatic polyamide containing one or more functional groups capable of reacting with an epoxy group is used as the polyamide resin and an inorganic filler is contained in the polyamide resin will be described.
However, the polyamide-based resin is not limited to a polymer manufactured by the following manufacturing method.

Step (a) is performed to obtain a mixture by dissolving at least one aromatic diamine in a solvent. Step (b) is carried out in order to obtain free hydrochloric acid and a polyamide solution by reacting at least one aromatic diamine with at least one aromatic dicarboxylic acid dichloride in a solvent. Step (c) is performed to remove free hydrochloric acid from the mixture by reaction with a capture reagent. Step (d) is performed to add an inorganic filler into the mixture. Step (e) is an optional (optional) step that is performed to add the polyfunctional epoxide.

Examples of the aromatic dicarboxylic acid dichloride used in this production method include those containing a compound represented by the following general formula.

p = 4, R ₁ , R ₄ , R ₅ are each independently hydrogen, halogen (fluoride, chloride, bromide, and iodide), alkyl, substituted alkyl such as alkyl halide, nitro, cyano, Selected from the group consisting of substituted alkoxy such as thioalkyl, alkoxy, halogenated alkoxy, substituted aryl such as aryl or aryl halide, alkyl ester, and substituted alkyl ester, and combinations thereof, G ₁ is a covalent bond, CH ₂ group , C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ Selected from the group consisting of a group, 9,9-fluorene group, substituted 9,9-fluorene, and OZO group, wherein Z is a phenyl group, a biphenyl group, a perfluorinated group Biphenyl group, an aryl group or a substituted aryl group such as 9,9-bisphenyl fluorene groups and substituted 9,9-bisphenyl fluorene.

Specific examples of the aromatic dicarboxylic acid dichloride as described above include the following.
Terephthaloyl dichloride (TPC)

Isophthaloyl dichloride (IPC)

4,4-Biphenyldicarbonyl dichloride (BPDC)

In one or more embodiments of the method for producing a polyamide solution, the aromatic diamine includes, for example, those containing a compound represented by the following general formula.

Here, p = 4, m = 1 or 2, t = 1-3, R ₆ , R ₇ , R ₈ , R ₉ , R ₁₀ , R ₁₁ are each independently hydrogen, halogen (fluoride, Chlorides, bromides, and iodides), substituted alkyls such as alkyls, alkyl halides, substituted alkoxys such as nitro, cyano, thioalkyls, alkoxy, halogenated alkoxys, substituted aryls such as aryl or aryl halides, alkyl esters, and Selected from the group consisting of substituted alkyl esters, and combinations thereof, each R ₆ may be the same or different, R ₇ may be the same or different, and R ₈ is each They may be the same or different, R ₉ may be the same or different, and R ₁₀ may be the same or different. R ₁₁ may be the same or different, and G ₂ and G ₃ may be a covalent bond, a CH ₂ group, a C (CH ₃ ) ₂ group, or a C (CF ₃ ) _2. Group, C (CX ₃ ) ₂ group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group, substituted 9,9-fluorene And Z is an aryl group or substituted aryl such as phenyl group, biphenyl group, perfluorobiphenyl group, 9,9-bisphenylfluorene group, and substituted 9,9-bisphenylfluorene It is a group.

Specific examples of the aromatic diamine as described above include the following.
4,4'-Diamino-2,2'-bistrifluoromethylbenzidine (PFMB)

9,9-bis (4-aminophenyl) fluorine (FDA)

9,9-Bis (3-fluoro-4-aminophenyl) fluorine (FFDA)

4,4'-Diaminodiphenic acid (DADP)

3,5-Diaminobenzoic acid (DAB)

4,4'-Diamino-2,2-bistrifluoromethoxylbenzidine (PFMOB)

4,4'-Diamino-2,2'-bistrifluoromethyldiphenyl ether (6FODA)

Bis (4-amino-2-trifluoromethylphenyloxyl) benzene (6FOQDA)

Bis (4-amino-2-trifluoromethylphenyloxyl) biphenyl (6FOBDA)

4,4'-Diaminodiphenyl sulfone (DDS)

The diaminodiphenyl sulfone may be 4,4′-diaminodiphenyl sulfone as shown in the above formula, or 3,3′-diaminodiphenyl sulfone (3,3′- Diaminodiphenyl sulfone) or 2,2′-diaminodiphenyl sulfone may be used.

In one or more embodiments of the method of making the polyamide solution, the functional group of the aromatic diamine containing a functional group capable of reacting with an epoxy group is greater than about 1 mol% and less than about 10 mol% of the diamine mixture. In one or more embodiments of the method for producing the polyamide solution, the functional group of the aromatic diamine containing a functional group capable of reacting with an epoxy group is a carboxyl group. In one or more embodiments of the method of making the polyamide solution, any one of the diamines is 4,4′-diaminodiphenic acid or 3,5-diaminobenzoic acid. In one or more embodiments of the method for producing the polyamide solution, the functional group of the aromatic diamine containing a functional group capable of reacting with an epoxy group is a hydroxyl group.

In one or more embodiments of the method of producing the polyamide solution, the aromatic polyamide is purified via condensation polymerization in a solvent. Here, hydrochloric acid generated during the reaction is captured by a capture reagent such as propylene oxide (PrO). Note that a volatile product is produced from the reaction between hydrochloric acid and the capture reagent.

From the viewpoint of using the polyamide solution in the present method, the capture reagent is propylene oxide. The capture reagent is added before or during step (c). By adding a capture reagent before or during step (c), the occurrence of condensation and viscosity in the mixture after step (c) can be reduced, thereby increasing the productivity of the polyamide solution. Can be improved. These effects are particularly noticeable when the capture reagent is an organic reagent such as propylene oxide.

From the viewpoint of improving the heat resistance of the resin film A, the method further includes a step of end-capping one or both of the terminal —COOH group and the terminal —NH ₂ group of the aromatic polyamide. The end of the aromatic polyamide can be end-capped by a reaction using benzoyl chloride when each end is —NH ₂ , and the end can be capped by a reaction using aniline when each end is —COOH. can do. However, the end sealing method is not limited to this.

The polyfunctional epoxide is selected from the group consisting of phenol epoxides and cycloaliphatic epoxides. Specifically, the polyfunctional epoxide includes diglycidyl 1,2-cyclohexanecarboxylate, triglycidyl isocyanur, tetraglycidyl 4,4′-diaminophenylmethane, 2,2-bis (4-glycidyloxylphenyl) propane, and these Selected from the group comprising high molecular weight homologues, novolak epoxides, 7H- [1,2-b: 5,6-b ′] bisoxylene octahydro, and epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate. The amount of polyfunctional epoxide is about 2-10% of the weight of the aromatic polyamide.

From the viewpoint of using the polyamide solution in the present method, the aromatic polyamide is first separated from the polyamide solution by precipitation and re-dissolution in a solvent before adding at least one of the inorganic filler and the polyfunctional epoxide.

Reprecipitation can be performed by a usual method. The reprecipitation is performed by, for example, precipitating the aromatic polyamide by adding it to methanol, ethanol, isopropyl alcohol or the like, washing the aromatic polyamide, and dissolving it in a solvent.
As the solvent, those described later can be used.

From the viewpoint of using the polyamide solution in the present method, the polyamide solution is produced so as not to contain inorganic salts.
A polyamide-based resin can be produced through the above steps.

In addition, the total light transmittance in the sodium wire (D line) of the resin film A is preferably 40% or more, more preferably 45% or more, still more preferably 50% or more, and particularly preferably 60%. It is said above. By setting the total light transmittance of the resin film A within the above-described range, the resin film A can be suitably used for manufacturing a display element, an optical element, an illumination element, or a sensor element.

The retardation (Rth) at a wavelength of 400 nm in the thickness direction of the resin film A is preferably 200.0 nm or less, more preferably 190.0 nm or less, and more preferably 180.0 nm or less, It is more preferably 175.0 nm or less, and further preferably 173.0 nm or less. The Rth of the resin film A can be calculated with a phase difference measuring device.

The resin film A preferably has a coefficient of thermal expansion (CTE) of 100.0 ppm / K or less, more preferably 80 ppm / K or less, more preferably 60 ppm / K or less, and 40 ppm. More preferably, it is / K or less. In addition, CTE of the resin film A can be measured with a thermomechanical analyzer (TMA).

By setting Rth and CTE within the above ranges, it is possible to accurately suppress or prevent the occurrence of warpage in the substrate provided with the resin film A. Therefore, the production yield of the organic EL display device 1 obtained using such a substrate can be improved.

The average thickness of the resin film A is not particularly limited, but is preferably about 1 to 50 μm, and more preferably about 5 to 30 μm. By setting the average thickness of the resin film A within the above range, the mechanical strength necessary and sufficient to support the pixel circuit 10 can be imparted to the resin film A. In addition, good flexibility can be imparted to the resin film A.

(Filler)
Various fillers may be added to the resin film A as necessary. Thereby, the thermal expansion coefficient of the resin film A can be reduced.
Examples of the constituent material of the filler include silica, alumina, metal oxides such as titanium oxide, minerals such as mica, glass, or a mixture thereof, and one or more of these may be combined. Can be used. Examples of the glass include E glass, C glass, A glass, S glass, D glass, NE glass, T glass, low dielectric constant glass, and high dielectric constant glass.
As the filler, an inorganic filler is particularly preferably used. Examples of the shape of the inorganic filler include particles and fibers.

When the inorganic filler is a fiber, the average fiber diameter of the fiber is preferably 1 to 1000 nm. By using a resin composition (polymer solution) containing an inorganic filler having an average fiber diameter as described above, the thermal linear expansion coefficient of the resin film A can be reduced without impairing optical properties and flexibility.

Here, the fiber may be composed of a plurality of single fibers. The plurality of single fibers are sufficiently separated so that the liquid precursor of the matrix resin enters between them without being aligned. In this case, the average fiber diameter is the average diameter of a plurality of single fibers. Further, the fiber may be one in which a plurality of single fibers are gathered in a bundle to constitute one yarn, and in this case, the average fiber diameter is the diameter of one yarn. Defined as an average value. Further, from the viewpoint of improving the transparency of the film, the average fiber diameter of the fiber is preferably as small as possible, and the refractive index of the polymer (polyamide or the like) contained in the resin composition used for the production of the resin film A and the refraction of the fiber The closer the rate, the better. For example, when the difference in refractive index at 589 nm between the material used for the fiber and the polymer is 0.01 or less, a highly transparent film can be formed regardless of the fiber diameter. Moreover, as a measuring method of an average fiber diameter, observation with an electron microscope etc. are mentioned, for example.

When the inorganic filler is a particle, the average particle diameter of the particle is preferably 1 to 1000 nm. By using a resin composition containing an inorganic filler in the form of particles having the average particle diameter as described above, the thermal linear expansion coefficient of the resin film A can be reduced without impairing optical properties and flexibility.
Here, the average particle diameter of the particles refers to an average projected circle equivalent diameter.

The shape of the particles is not particularly limited, and examples thereof include a spherical shape or a true spherical shape, a rod shape, a flat plate shape, or a combined shape thereof.

The proportion of the inorganic filler in the solid content in the resin composition is not particularly limited, but is preferably 1% by volume to 50% by volume, more preferably 2% by volume to 40% by volume. More preferably, the volume is 30% by volume. Further, the ratio of the polymer in the solid content in the resin composition is not particularly limited, but is preferably 50% by volume to 99% by volume, more preferably 60% to 98% by volume, and 70% to 97% by volume. More preferably.

In the present specification, “solid content” refers to components other than the solvent in the resin composition. The volume conversion of the solid content, the volume conversion of the inorganic filler, and / or the volume conversion of the polymer can be calculated from the input amounts of the components when preparing the polymer solution. Alternatively, it can be calculated by removing the solvent from the polymer solution.

(Epoxy reagent)
In addition, the resin composition can be made into a polyamide-based resin from the viewpoint of reducing the curing temperature of the resin composition as needed and improving the resistance of the resin film A obtained from the resin composition to an organic solvent. In addition, an epoxy reagent may be included. The epoxy reagent contained in the resin composition is preferably a polyfunctional epoxide.

In one or more embodiments of the present invention, the polyfunctional epoxide is an epoxide containing two or more glycidyl epoxy groups, or an epoxide containing two or more alicyclic groups.

When the resin composition contains a polyfunctional epoxide, the content of the polyfunctional epoxide is, in one or more embodiments of the present invention, about 0.1 to 10% by weight based on the weight of the polyamide-based resin. preferable.

The resin composition containing the polyfunctional epoxide can lower the curing temperature of the resin film A in one or more embodiments of the present invention, and in one or more embodiments without limitation, the resin film A The curing temperature of can be about 200 ° C. to about 300 ° C.
Moreover, the resin composition containing a polyfunctional epoxide can impart resistance to an organic solvent to the resin film A produced from the resin composition in one or more embodiments of the present invention. Examples of the organic solvent include polar solvents such as N-methyl-2-pyrrolidone (NMP), N, N-dimethylacetamide (DMAc), dimethyl sulfoxide (DMSO), and γ-butyrolactone (GBL).

It is speculated that the effect of lowering the curing temperature and improving the resistance to organic solvents in the resin composition containing the polyfunctional epoxide can be obtained by crosslinking with the epoxide. From the viewpoint of promoting crosslinking by epoxide, the polyamide-based resin contained in such a resin composition has, in one or more embodiments of the present invention, a free pendant carboxyl group in its main chain, or It is preferably synthesized using a diamine monomer having a carboxyl group.

In one or more embodiments of the present invention, the polyfunctional epoxide is selected from the group comprising the following general structures (α) and (β):

(Where l represents the number of glycidyl groups and R is

and

[M = 1 to 4, n and s are each an average number of independent units and are 0 to 30, and each R ₁₂ is independently hydrogen, halogen ( Fluoride, chloride, bromide, and iodide), substituted alkyl such as alkyl and alkyl halide, substituted alkoxy such as nitro, cyano, thioalkyl, alkoxy and halogenated alkoxy, substituted aryl such as aryl and aryl halide, alkyl G ₄ is selected from the group consisting of esters, substituted alkyl esters, and combinations thereof, and G ₄ is a covalent bond, CH ₂ group, C (CH ₃ ) ₂ group, C (CF ₃ ) ₂ group, C (CX ₃ ) ₂ Group (where X is halogen), CO group, O atom, S atom, SO ₂ group, Si (CH ₃ ) ₂ group, 9,9-fluorene group, substituted 9,9-fluorene And Z is an aryl group or substituted aryl such as phenyl group, biphenyl group, perfluorobiphenyl group, 9,9-bisphenylfluorene group, and substituted 9,9-bisphenylfluorene R ₁₃ is a hydrogen atom or a methyl group, and R ₁₄ is a divalent organic group. ]. )

(However, the cyclic structure is

and

[R ₁₅ is an alkyl chain having 2 to 18 carbon atoms, the alkyl chain is a chain having a straight chain, a branched chain, or a cyclic skeleton, and m and n are each Independently, it is an integer of 1 to 30, and a, b, c, d, e and f are each independently an integer of 0 to 30. ]. )

In one or more embodiments of the present invention, the multifunctional epoxide is

(R ₁₆ is an alkyl chain having 2 to 18 carbon atoms, and the alkyl chain is a chain having a straight chain, a branched chain or a cyclic skeleton, and t and u are each represented by Independently, an integer from 1 to 30).

In one or more embodiments of the present invention, the polyfunctional epoxide specifically includes:
Diglycidyl 1,2-cyclohexanedicarboxylate (DG)

Triglycidyl isocyanurate (TG)

Tetraglycidyl 4, 4'-diaminophenyl methane (TTG)

(3,3 ', 4,4'-diepoxy) bicyclohexyl

In addition,

Etc.

(Other ingredients)
Furthermore, the resin film A may contain other components.
Examples of other components include an antioxidant, an ultraviolet absorber, and a dye / pigment.

In addition, the resin film A is manufactured using the polymer solution (resin composition) obtained by mixing the above-described polymer, filler, other components, and the like with the solvent described above.

Examples of the solvent for producing the polymer solution include cresol; N, N-dimethylacetamide (DMAc); N-methyl-2-pyrrolidinone (NMP); dimethyl sulfoxide (DMSO); 1,3-dimethyl-imidazolide. Non (DMI); N, N-dimethylformamide (DMF); Butyl cellosolve (BCS); γ-butyrolactone (GBL); or Cresol, N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidinone (NMP) ), Dimethyl sulfoxide (DMSO); mixed solvent containing at least one of 1,3-dimethyl-imidazolidinone (DMI), N, N-dimethylformamide (DMF), butyl cellosolve (BCS), and γ-butyrolactone (GBL) A combination thereof; or a small amount of these polar solvents. A mixed solvent containing at least one is preferable.

Although the organic EL display device 1 has been described above, the display device of the present invention is not limited to the application to the organic EL display device, and is also applicable to a display device such as an inorganic EL display device, a liquid crystal display device, and electronic paper. Is possible.

Moreover, when the structure having the resin film A and the plurality of thin film transistors B provided thereon is referred to as “element laminated film (embodiment of the element laminated film of the present invention)”, the element laminated film of the present invention is However, the present invention is not limited to application to a display device, and can be applied to various devices other than a display device such as an arithmetic device, a drive device, a control device, a photoelectric conversion device, a lighting device, and a sensor device.

Further, the above-described active matrix device is not limited to the above configuration, and may have another configuration.

<Method for Manufacturing Organic EL Display Device>
<< First Embodiment >>
Next, the manufacturing method of the organic EL display device 1 including the first embodiment of the manufacturing method of the element laminated film of the present invention will be described.

3 to 5 are longitudinal sectional views for explaining a method for manufacturing the organic EL display device shown in FIG. 1 (first embodiment of the method for manufacturing an element laminated film of the present invention). FIG. 6 is a plan view of the organic EL display device shown in FIG. In the following description, for convenience of explanation, the upper side in FIGS. 3 to 5 is referred to as “upper” and the lower side is referred to as “lower”.

The method of manufacturing the organic EL display device 1 includes: [1] a surface treatment step of preparing the carrier substrate 7 and forming the inorganic coating 72 along the edge 711 (first portion) of the upper surface 71 (main surface) thereof. [2] A film forming step of applying the resin solution A0 (resin composition) on the upper surface 71 to form the resin film A, thereby obtaining the laminate 8 (substrate with film); [3] Resin film A Forming the pixel circuit 10 (element) and forming the sealing layer 400, and [4] thickness of the stacked body 8 so as to remove a portion corresponding to the edge 711 of the stacked body 8. A cutting step of cutting in the direction, and [5] a peeling step of peeling the resin film A from the carrier substrate 7 (separating the resin film A and the carrier substrate 7).

Hereinafter, each process will be described sequentially.
[1] Surface treatment step [1-1] First, the carrier substrate 7 is prepared (see FIG. 3A).

The carrier substrate 7 may be any substrate as long as it has sufficient rigidity to support the resin film A. In the manufacturing process of the organic EL display device 1, when the carrier substrate 7 is exposed to a high temperature, a substrate having heat resistance is preferably used.

The shape of the carrier substrate 7 in plan view is not particularly limited, but is rectangular as an example in this embodiment.

Examples of the constituent material of the carrier substrate 7 include various glass materials such as soda glass, borosilicate glass, alkali-free glass, and quartz glass, various silicon materials such as single crystal silicon and polycrystalline silicon, sapphire, and alumina. Various ceramic materials, various metal materials such as stainless steel and aluminum, various resin materials such as polyimide and polyethylene naphthalate, and the like. As a constituent material of the carrier substrate 7, a light-transmitting material is particularly preferably used, and a glass material is more preferably used. Since the glass material has translucency, it is useful in that exposure from the carrier substrate 7 side is possible when the resin solution A0 is cured. In addition, since glass materials are relatively inexpensive and have high wear resistance, they are also useful from the viewpoint of cost reduction in the manufacturing process.

Further, as the glass material, soda glass or non-alkali glass is particularly preferably used, and soda glass is more preferably used. Since these are widely distributed as glass materials, they are easily available and the quality is relatively stable. For this reason, since the flatness is high even with a substrate having a large area, by using such a substrate as the carrier substrate 7, it is possible to finally manufacture the organic EL display device 1 having excellent flatness. In addition, since the carrier substrate 7 has a small surface roughness, the resin film A can be easily peeled from the carrier substrate 7 while suppressing a burden on the resin film A in a peeling step described later.

Furthermore, soda glass has a feature that its adhesion to the resin film A is relatively small. For this reason, by using the carrier substrate 7 made of soda glass, the resin film A can be peeled from the carrier substrate 7 while particularly suppressing the burden on the resin film A in the peeling step described later.

Note that the carrier substrate 7 does not have to be formed of a single layer (single plate), and may be formed of a plurality of layers. In that case, what is necessary is just to use the glass material mentioned above as a constituent material of the layer located closest to the resin film A in the film formation process mentioned later.

Further, the upper surface 71 of the carrier substrate 7 may be subjected to various polishing treatments, various surface roughening treatments, and the like as necessary.

[1-2] Next, as shown in FIG. 3B, an inorganic coating 72 is formed along the edge 711 (first portion) of the upper surface 71 (main surface) of the carrier substrate 7. By providing this inorganic coating 72, the adhesiveness with respect to the resin film A of the edge 711 of the upper surface 71 can be improved relatively. That is, when the upper surface 71 is defined by dividing into an edge portion 711 (first portion) and a central portion 712 (second portion), the resin film A for the edge portion 711 is formed by forming the inorganic coating 72 on the edge portion 711. Can be made larger than the adhesive force of the resin film A to the central portion 712. Thereby, the resin film A becomes difficult to peel from the carrier substrate 7, and the resin film A can be more reliably supported by the carrier substrate 7 during the manufacturing process of the organic EL display device 1.

Examples of the constituent material of the inorganic coating 72 include silicon oxide, zinc oxide, indium oxide (IO), indium tin oxide (ITO), various oxide materials such as fluorine-doped tin oxide (FTO), silicon nitride, Examples thereof include various nitride materials such as titanium nitride and aluminum nitride, and various carbide materials such as silicon carbide and titanium carbide. As a constituent material of the inorganic coating 72, an oxide material is particularly preferably used. According to the oxide material, the adhesion of the resin film A to the inorganic coating 72 can be particularly increased, so that the resin film A can be more reliably supported even if the area of the inorganic coating 72 is small. For this reason, in the cutting process mentioned later, the area of the part which the laminated body 8 removes can be made small enough, and the quantity of waste, ie, the waste on a manufacturing process, can be suppressed. At the same time, a larger organic EL display device 1 can be manufactured without changing the size of the carrier substrate 7.

In this embodiment, the inorganic coating 72 is formed on the edge 711 of the upper surface 71 of the carrier substrate 7. Specifically, as shown in FIG. 6, the carrier substrate 7 according to this embodiment has a rectangular shape in plan view, and the shape in plan view of the edge portion 711 of the upper surface 71 is on the outer edge of the carrier substrate 7. Along with this, a rectangular frame is formed.

Then, by forming the inorganic coating 72 on the edge portion 711 set along the outer edge of the upper surface 71 in this way, even when an external force is applied to the stacked body 8 during the manufacturing process, for example, the stacked body 8 It is difficult for the resin film A to peel off from the carrier substrate 7 at the outer edge. For this reason, it can prevent that the peeling | exfoliation which started from the outer edge of the laminated body 8 progresses, and can prevent that the resin film A falls off from the carrier substrate 7 during a manufacturing process.

In other words, in this embodiment, the inorganic coating 72 is formed so as to surround the central portion 712 (the first portion is provided). For this reason, an external force is applied to the laminate 8 during the manufacturing process, and even if the resin film A is peeled off from the carrier substrate 7 at the central portion 712, the resin film A may drop off or bend from the carrier substrate 7. The position of the carrier substrate 7 can be prevented from shifting. As a result, the pixel circuit 10 (element) can be formed with high positional accuracy in the element formation process described later, and the high-definition organic EL display device 1 can be manufactured.

In this manufacturing method, the organic EL display device 1 is manufactured by finally peeling the resin film A from the carrier substrate 7. Therefore, by removing a portion corresponding to the edge 711 (first portion) on which the inorganic coating 72 of the laminated body 8 is formed in the cutting step described later, the peeling operation in the subsequent peeling step is facilitated. For this reason, the adhesive force of the resin film A with respect to the edge portion 711 is as large as possible from the viewpoint of making the resin film A difficult to peel from the carrier substrate 7 before the peeling step (making the resin film A difficult to drop off). preferable.

On the other hand, the adhesive force of the resin film A to the central portion 712 is preferably as small as possible from the viewpoint of easily peeling the resin film A from the carrier substrate 7 in the peeling step. However, if the adhesion amount is too small, the resin film A may fall off the carrier substrate 7 without giving any trigger after the cutting step. For this reason, it is preferable that the adhesive force of the resin film A with respect to the center part 712 is a grade which does not peel without any trigger from a viewpoint of the handleability of the laminated body 8 in the manufacturing process after a cutting process.

In addition, “adhesion strength” in the present specification refers to adhesion strength per unit area, and the value can be expressed using, for example, MPa or the like as a unit.

In the present invention, the region where the inorganic coating 72 is formed is not limited to the edge 711 of the upper surface 71. For example, when a part to be removed of the stacked body 8 is set to correspond to a portion other than the edge 711 in a cutting step described later, a region for forming the inorganic coating 72 may be set accordingly. Also, a plurality of organic EL display devices 1 are manufactured on the carrier substrate 7, then cut and divided into individual organic EL display devices 1, and finally the organic EL display device 1 is peeled from the carrier substrate 7. Even in such a case, the region where the inorganic coating 72 is formed may be appropriately set in a region other than the edge portion 711 according to the pattern of the dividing line.

Further, when the inorganic coating 72 is formed so as to surround the central portion 712, the inorganic coating 72 is preferably continuous, but may be partially interrupted (intermittent).

Further, an inorganic coating 72 having a predetermined area may also be formed on the central portion 712. For example, the adhesive force of the resin film A to the carrier substrate 7 in the central portion 712 may be increased (adjusted) by forming a small area inorganic coating 72 in the central portion 712 in a dot shape.

The average thickness of the inorganic coating 72 is not particularly limited, but is preferably about 0.01 to 20 μm, and more preferably about 0.05 to 10 μm. By setting the average thickness of the inorganic coating 72 within the above range, the adhesion of the resin film A to the edge portion 711 can be sufficiently increased, and a large height difference between the edge portion 711 and the central portion 712 is obtained. Can be prevented from occurring. Thereby, it can avoid that the shape of the resin film A becomes defective.

Further, instead of forming the inorganic coating 72, the edge portion 711 (first portion) may be subjected to a coupling agent treatment. Also by the coupling agent treatment, the adhesive force of the resin film A to the edge portion 711 can be made larger than the adhesive force of the resin film A to the central portion 712 as in the inorganic coating 72. For this reason, like the inorganic coating 72, the resin film A is prevented from falling off, dripping, or being displaced from the carrier substrate 7 during the manufacturing process. The EL display device 1 can be manufactured.

The coupling agent is not particularly limited as long as it can enhance the adhesion of the resin film A to the carrier substrate 7. However, as a coupling agent, a silane coupling agent or a titanium coupling agent having a hydrolyzable group capable of reacting with a hydroxyl group by dehydration condensation and a reactive functional group capable of reacting with the resin film A and bonding, a modified agent Silicone oil etc. are mentioned as an example.

Examples of reactive functional groups include amino groups, epoxy groups, alkyl groups, phenyl groups, carboxyl groups, hydroxyl groups, mercapto groups, isocyanate groups, carbinol groups, and acid chlorides. The reactive functional group may contain a plurality of these. In particular, the reactive functional group is preferably an amino group. By using a coupling agent containing an amino group as a reactive functional group, sufficient adhesion can be exhibited even when a coupling process is performed on a small area.

Examples of the coupling agent having an amino group as a reactive functional group include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane and N-2- (aminoethyl) -3-aminopropyltrimethoxysilane. 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N -(Vinylbenzyl) -2-aminoethyl-3-aminopropyltrimethoxysilane, or a hydrochloride thereof.

When the coupling agent treatment is performed on the upper surface 71 of the carrier substrate 7, as a solvent for dissolving the coupling agent, in addition to water, lower alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol, methyl ethyl ketone, acetone Ketones such as, cyclic ethers such as tetrahydrofuran and dioxane, phenols such as phenol and cresol, carboxylic acids such as acetic acid, and the like may be used. In this case, the concentration of the coupling agent is preferably about 0.05 to 10% by mass, and more preferably about 0.1 to 5% by mass.

Further, the edge portion 711 (first portion) may be subjected to various surface treatments in place of the formation of the inorganic coating 72 and the coupling agent treatment.

Examples of such surface treatment include electron beam irradiation treatment, corona discharge treatment, arc discharge treatment, excimer light irradiation treatment, plasma treatment, and etching treatment.

In addition, it is preferable that predetermined | prescribed water repellency is provided to the edge part 711 by these surface treatments.

Specifically, the contact angle of water with the edge 711 after the surface treatment is preferably about 8 to 40 °, more preferably about 10 to 35 °, and about 12 to 30 °. Is more preferable. By appropriately selecting the surface treatment so that the contact angle is within the above range, the adhesion of the resin film A to the edge 711 can be particularly enhanced.

Moreover, when the contact angle of water is less than the lower limit, the hydrophilicity of the edge portion 711 is increased, but the affinity for the edge portion 711 of the resin solution is reduced, and the adhesion force of the resin film A may be reduced. . On the other hand, when the contact angle of water exceeds the upper limit, the oleophilicity of the edge portion 711 is increased, but, for example, the binding property to the edge portion 711 of the hydrolyzable group of the coupling agent is lowered, and the resin film A Adhesion may be reduced.

In addition, the water contact angle of the edge 711 is a value measured by a method set at a temperature of 25 ° C. in accordance with the JIS R 3257 (1999) sessile drop method.

[2] Film Forming Step Next, as shown in FIG. 3C, the resin solution A0 is applied to the upper surface 71 (main surface) of the carrier substrate 7. Thereby, a coating film is formed. In FIG. 3C, the coating film is formed so as to cover the entire upper surface 71 of the carrier substrate 7, but the formation region of the coating film is not limited to this, and the upper surface including a part of the edge 711. You may form so that 71 may be covered partially.

As a method for applying the resin solution A0, for example, various liquid phase film forming methods such as a die coating method, an ink jet method, a spin coating method, a bar coating method, a roll coating method, a wire bar coating method, and a dip coating method are used.

Examples of the solvent used for preparing the resin solution A0 include toluene, xylene, benzene, dimethylformamide, tetrahydrofuran, ethyl cellosolve, ethyl acetate, N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, Dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl ethyl ketone, cyclohexanone, tetrahydrofuran, methyl-1, 3-butylene glycol acetate, 1,3-butylene glycol 3-monomethyl ether, methyl pyruvate, ethyl pyruvate, include methyl 3-methoxy propionate or the like, can be used singly or in combination of two or more of them. In this case, the concentration of the resin component is preferably about 0.5 to 25% by mass, and more preferably about 1 to 20% by mass.

Next, the coating film is dried and cured to obtain a resin film A. Thereby, the laminated body 8 is obtained (refer FIG.4 (d)).

The heating temperature for curing the coating film is appropriately set according to the composition of the resin solution A0, but is preferably about 220 to 420 ° C., more preferably about 280 to 400 ° C., 330 More preferably, it is about 370 ° C.

Further, the heating time for curing the coating film is appropriately set according to the heating temperature, but is preferably about 5 to 300 minutes, and more preferably about 30 to 240 minutes.

In addition, what is necessary is just to perform the surface treatment process and film formation process which were mentioned above as needed. For example, when the laminated body 8 is marketed, you may make it use the laminated body 8 at the element formation process mentioned later. In that case, a surface treatment process and a film formation process can be omitted.

Further, the width of the edge 711 is appropriately set according to the adhesion of the resin film A to the edge 711. For example, in consideration of the magnitude of the external force applied to the laminate 8 in the manufacturing process of the organic EL display device 1, the adhesion force is such that the resin film A does not peel from the edge 711 even when the external force is applied. The width of the edge part 711 should just be set. The width of the edge portion 711 varies depending on the size of the carrier substrate 7, but is set to about 2 to 50 mm as an example. If the width of the edge portion 711 is less than the lower limit value, the resin film A may be easily peeled even at the edge portion 711 depending on the magnitude of the adhesion strength per unit area. On the other hand, if the width of the edge portion 711 exceeds the upper limit value, the proportion of the portion of the laminated body 8 to be removed in the cutting step described later increases, and the amount of waste may increase.

In addition, the adhesion strength of the region subjected to the surface treatment such as the formation of the inorganic coating 72 described above can be evaluated by a method based on a tape adhesion test defined in ASTM D3359-B, for example.

Specifically, first, a cut is made in a portion corresponding to the edge 711 on the upper surface of the laminate 8 (the upper surface of the resin film A). This notch is formed so as to penetrate the resin film A and reach the carrier substrate 7. The incision is formed by using a cutting jig having multiple blades with a blade pitch of 1 mm.

Next, an adhesive tape (for example, cello tape (registered trademark) manufactured by Nichiban Co., Ltd.) is applied to the cut portion of the upper surface of the laminate 8. Thereafter, the adhesive tape is sufficiently pressed against the laminated body 8.

Next, one end of the adhesive tape is gripped and pulled at an angle of 45 ° with respect to the upper surface (attachment surface) of the laminate 8, and the adhesive tape is peeled off from the laminate 8.

Next, the adhesive force of the resin film A to the edge 711 is evaluated by observing the upper surface (peeling surface) of the laminate 8 and applying the area where the resin film A is peeled to the following evaluation criteria.

(Evaluation criteria for adhesion)
5B: No peeling (peeled area is 0%).
4B: The peeled area is less than 5%.
3B: The peeled area is 5% or more and less than 15%.
2B: The peeled area is 15% or more and less than 35%.
1B: The peeled area is 35% or more and less than 65%.
0B: The peeled area is 65% or more.

According to such an evaluation method, the adhesion of the resin film A to the carrier substrate 7 can be quantitatively evaluated.

For example, the adhesion strength of the resin film A to the edge 711 preferably corresponds to the above-described evaluation of 2B to 5B, and more preferably corresponds to the evaluation of 4B or 5B. When the adhesion force corresponds to such an evaluation, it is possible to prevent the resin film A from being peeled from the carrier substrate 7 during the manufacturing process even when the area of the edge portion 711 is small.

On the other hand, the adhesive force of the resin film A to the central portion 712 is not particularly limited as long as the adhesive force of the resin film A to the edge portion 711 is smaller. The difference between the adhesion force of the resin film A to the central portion 712 and the adhesion force of the resin film A to the edge portion 711 is preferably 5% or more based on the area peeled in the evaluation test. More preferred is the degree. Thereby, the resin film A can finally be peeled relatively easily from the carrier substrate 7 while preventing the resin film A from being peeled from the carrier substrate 7 without any trigger.

[3] Element formation step [3-1] Next, as shown in FIG. 4E, the pixel circuit 10 (element) is formed on the resin film A (on the side opposite to the carrier substrate 7 of the resin film A). To do.

Specifically, first, after forming a conductive film on the resin film A, the conductive film is patterned to form the gate electrode 200.

The formation of the conductive film on the resin film A can be performed, for example, by supplying a metal material such as aluminum, tantalum, molybdenum, titanium, or tungsten by various vapor deposition methods such as sputtering.

Next, a gate insulating layer 201 is formed so as to cover each gate electrode 200.
The gate insulating layer 201 is composed of, for example, silicon oxide or silicon nitride as a main material. The gate insulating layer 201 can be formed by performing a plasma CVD method or the like using TEOS (tetraethoxysilane), oxygen gas, nitrogen gas, or the like as a source gas.

Next, after forming a conductive film on each gate insulating layer 201, the source electrode 202 and the drain electrode 204 are formed by patterning the conductive film.

The formation of the conductive film over the gate insulating layer 201 can be performed using a method similar to that for forming the gate electrode 200.

Next, the semiconductor layer 203 is formed corresponding to the channel region between each source electrode 202 and each drain electrode 204.

For this semiconductor layer 203, for example, a sputtering method is performed in an atmosphere containing oxygen and / or nitrogen using a metal target containing a metalloid element and / or a metal element which is a part of the constituent elements of the semiconductor material described above. Alternatively, it can be formed by various other vapor deposition methods or various liquid deposition methods.
As described above, the thin film transistor B is formed.

Next, a planarization layer 301 is formed so as to cover the resin film A and the thin film transistor B formed on the resin film A.

Next, a contact hole is formed so as to penetrate the planarizing layer 301 in the thickness direction, and then a conductive portion 300 is formed in the contact hole.

An anode (individual electrode) 302 is formed on the planarizing layer 301 so as to correspond to each conductive part 300.

Next, a hole transport layer 303 is formed so as to cover each anode 302.
Next, a light emitting layer 304 is formed so as to cover each hole transport layer 303.

Next, an electron transport layer 305 is formed so as to cover each light emitting layer 304.
Next, a cathode 306 is formed so as to cover each electron transport layer 305.

Each of these layers can be formed using, for example, a vapor phase film formation method such as a sputtering method, a vacuum evaporation method, or a CVD method, or a liquid phase film formation method such as an ink jet method, a spin coating method, or a casting method. it can.

The light emitting element C is formed as described above, and the pixel circuit 10 including the thin film transistor B and the light emitting element C is formed.

[3-2] Next, as shown in FIG. 4F, a sealing layer 400 is formed so as to cover the pixel circuit 10.

[4] Cutting Step Next, the stacked body 8 is cut in the thickness direction so as to remove (cut off) a portion corresponding to the edge 711 of the stacked body 8 (see FIG. 5G). That is, the laminate 8 is cut in the thickness direction so as to remove the carrier substrate 7, the resin film A, and the sealing layer 400 corresponding to the edge 711.

This cutting can be performed by, for example, a mechanical method using a dicer, a laser processing method, an electron beam processing method, a water jet processing method, or the like. In FIG.5 (g), the cutting method by the diamond cutter 9 is illustrated as an example.

The edge 711 according to the present embodiment has a rectangular frame shape as shown in FIG. Therefore, in this step, a portion corresponding to the edge portion 711 forming the frame shape of the stacked body 8 is removed.

By such cutting, a rectangular frame-shaped portion (removal portion 81) in the plan view is removed from the stacked body 8. As a result, a portion (remaining portion 82) of the stacked body 8 that is located inside the removed portion 81 and that corresponds to the central portion 712 having a rectangular shape in plan view remains.

In the remaining portion 82, the resin film A is in close contact with the carrier substrate 7 with a relatively small adhesive force as compared with the removed portion 81.

[5] Peeling process Finally, the resin film A is peeled from the carrier substrate 7 in the remaining portion 82. Thereby, the organic EL display device 1 is obtained.

As described above, in the remaining portion 82, the resin film A is in close contact with the carrier substrate 7 with a relatively small adhesive force as compared with the removed portion 81. For this reason, the operation | work which peels the resin film A from the carrier substrate 7 in the remaining part 82 can be performed comparatively easily. For example, an operation of lightly applying a force to the remaining portion 82 with a human hand, blowing a gas, applying a vibration, or bending the remaining portion 82 causes a separation. After this trigger occurs, the resin film A can be easily peeled from the carrier substrate 7.

Moreover, if peeling is easy, the load added to the resin film A when peeling will be reduced. For this reason, according to the present invention, the load applied to the resin film A is suppressed from adversely affecting the pixel circuit 10 formed on the resin film A, thereby deteriorating the characteristics of the pixel circuit 10. Can be reduced.

Further, by reducing the load applied to the resin film A, it is possible to suppress the optical characteristics of the resin film A from being lowered. Thereby, the fall of the translucency of the resin film A is suppressed, and the fall of the brightness and contrast of the display of the organic electroluminescence display 1 can be suppressed.

In this peeling step, the resin film A can be peeled relatively easily from the carrier substrate 7 as described above. For this reason, when the resin film A is peeled from the carrier substrate 7, a peeling process using laser irradiation or the like can be omitted, or the energy to be irradiated can be reduced. For this reason, the malfunction by laser irradiation, for example, the quality change by the heat_generation | fever of the resin film A and the pixel circuit 10, deterioration, etc. can be prevented. As a result, a more reliable organic EL display device 1 can be manufactured.

<< Second Embodiment >>
Next, the manufacturing method of the organic electroluminescence display 1 including 2nd Embodiment of the manufacturing method of the element laminated film of this invention is demonstrated.

FIG. 7 is a longitudinal sectional view for explaining another method for manufacturing the organic EL display device shown in FIG. 1 (second embodiment of the method for manufacturing an element laminated film of the present invention). In the following description, for convenience of explanation, the upper side in FIG. 7 is referred to as “upper” and the lower side is referred to as “lower”.

Hereinafter, the second embodiment will be described. However, in the following description, differences from the first embodiment will be mainly described, and description of similar matters will be omitted.

The manufacturing method of the organic EL display device 1 including the method for manufacturing the element laminated film according to the second embodiment is different from the cutting position in the cutting step, and includes the method for manufacturing the element laminated film according to the first embodiment. This is the same as the manufacturing method of the device 1.

That is, in the cutting process according to the present manufacturing method, the lamination is performed so as to remove all of the portion of the laminate 8 corresponding to the inorganic coating 72 provided on the edge 711 (first portion) of the upper surface 71 of the carrier substrate 7. Rather than cutting the body 8 in the thickness direction, as shown in FIG. 7A, the laminate 8 is moved in the thickness direction so that only a part of the laminate 8 corresponding to the inorganic coating 72 is removed. Disconnect. Thereby, a part of part corresponding to the inorganic coating 72 of the laminated body 8 remains without being removed. As a result, in the remaining portion 82 where the inorganic coating 72 is not provided, the adhesion of the resin film A to the carrier substrate 7 is relatively small. On the other hand, the adhesive force of the resin film A to the carrier substrate 7 is relatively large due to the action of the inorganic coating 72 in the remaining portion 82 where the inorganic coating 72 remains.

Therefore, in this embodiment, by appropriately adjusting the area of the portion of the laminate 8 corresponding to the inorganic coating 72 to be removed in the cutting step, in other words, the laminate 8 corresponding to the inorganic coating 72 remaining in the cutting step. By appropriately adjusting the area of this part, the ease of peeling of the resin film A from the carrier substrate 7 in the remaining part 82 can be freely controlled. Therefore, for example, when the adhesive force of the resin film A to the carrier substrate 7 at the central portion 712 is too small, the resin film A may be peeled from the carrier substrate 7 during the cutting operation. For this reason, what is necessary is just to leave the part of the laminated body 8 corresponding to the inorganic coating 72 of a predetermined area so that the adhesive force of the grade which can prevent this peeling is ensured.

The area of the inorganic coating 72 that remains on the remaining portion 82 side depends on the adhesion strength of the resin film A to the carrier substrate 7 required in the remaining portion 82 and the adhesion strength per unit area of the resin film A to the inorganic coating 72. Are appropriately set and are not limited. As an example, it is preferable to cut the laminate 8 so that 50% or less of the total area of the inorganic coating 72 remains on the remaining portion 82 side, and it is more preferable to cut the laminate 8 so that about 1 to 40% remains. Preferably, the laminate 8 is more preferably cut so that about 3 to 30% remains. Accordingly, the resin film A is prevented from peeling from the carrier substrate 7 at the remaining portion 82 during the cutting operation, and the resin film A is easily removed from the carrier substrate 7 by giving a simple trigger after the cutting operation is completed. Can be peeled off.

Then, in the peeling step, the organic EL display device 1 shown in FIG. 7C is obtained by peeling the resin film A from the carrier substrate 7. At this time, by adjusting the area of the inorganic coating 72 to remain, it is possible to minimize the load applied to the resin film A along with the peeling operation, and to minimize the adverse effect applied to the resin film A and the pixel circuit 10. it can.

In addition, when the area of the inorganic coating 72 to remain is small, laser irradiation may be used for the peeling operation of the resin film A from the inorganic coating 72. By reducing the area of the inorganic coating 72 that remains, the adverse effect of the laser irradiation on the resin film A and the pixel circuit 10 can be minimized.

Examples of the laser light used for the laser irradiation include a pulse oscillation type or a continuous emission type excimer laser, a carbon dioxide gas laser, a YAG laser, and a YVO ₄ laser.

FIG. 7C shows a state where the inorganic coating 72 is attached to the resin film A, but the inorganic coating 72 may remain on the carrier substrate 7.
In addition, by appropriately setting the film formation region (first portion) of the inorganic coating 72, the inorganic coating 72 can be prevented from adversely affecting the optical characteristics of the organic EL display device 1.

Also in the manufacturing method of the organic EL display device 1 including the second embodiment of the method for manufacturing the element laminated film of the present invention as described above, the manufacturing method of the organic EL display device 1 including the first embodiment described above is the same. There is an effect.

As mentioned above, although the manufacturing method of the element laminated | multilayer film of this invention, the element laminated film, and the display apparatus were demonstrated, this invention is not limited to this. For example, the process for arbitrary purposes may be added to the manufacturing method of an element laminated film.

Next, specific examples of the present invention will be described.
1. Preparation of test piece for evaluation (Sample No. 1)
[Preparation of resin composition]
To obtain a <1> solution, PFMB (3.2024 g, 0.01 mol) and DMAc (30 ml) were added to a 250 ml three-necked round bottom flask equipped with a mechanical stirrer and a nitrogen inlet and outlet.

<2> After PFMB was completely dissolved in the solution, PrO (1.7 g, 0.03 mol) was added to the solution. The solution was then cooled to 0 ° C.

<3> While stirring, TPC (0.203 g, 0.001 mol) and IPC (1.827 g, 0.0090 mol) were added to the solution, and then the flask wall was washed with DMAc (1.5 ml).

<4> After 2 hours, benzoyl chloride (0.032 g, 0.23 mmol) was added to the solution, and the mixture was further stirred for 2 hours.

[surface treatment]
Next, a carrier substrate (diameter 125 mm) made of soda glass was prepared, and a coupling agent treatment was performed on one surface. As a coupling agent, an isopropyl alcohol solution (concentration 1% by mass) of 3-aminopropyltrimethoxysilane was used.

[Production of resin film]
A resin film was formed on a carrier substrate using the prepared resin composition.

That is, first, the resin composition was applied on a flat carrier substrate by spin coating.

Next, after the resin composition was dried at 100 ° C. for 1 minute, the film was cured by maintaining at 350 ° C. for 30 minutes in an inert atmosphere. Thereby, the test piece for evaluation formed by forming a resin film on the carrier substrate was obtained.
In addition, the average thickness of the obtained resin film was 10 micrometers.

(Sample No. 2)
[Preparation of resin composition]
<1> In order to obtain a solution, a 250 ml three-neck round bottom flask equipped with a mechanical stirrer and a nitrogen inlet and outlet was added to PFMB (3.041 g, 0.0095 mol), DAB (0.0761 g, 0.0005 mol). And DMAc (30 ml) was added.

<2> After PFMB was completely dissolved in the solution, PrO (1.7 g, 0.03 mol) was added to the solution. The solution was then cooled to 0 ° C.

<3> While stirring, TPC (0.203 g, 0.001 mol) and IPC (1.827 g, 0.0090 mol) were added to the solution, and then the flask wall was washed with DMAc (1.5 ml).

<4> After 2 hours, benzoyl chloride (0.032 g, 0.23 mmol) was added to the solution, and the mixture was further stirred for 2 hours.

Next, sample no. In the same manner as in Example 1, a surface treatment was performed and a resin film was formed to obtain a test piece for evaluation.

(Sample No. 3)
Sample No. 1 was changed except that the coupling agent was changed to 3-aminopropyltriethoxysilane. In the same manner as in Example 1, an evaluation test piece was obtained.

(Sample No. 4)
Sample No. 5 was changed except that the coupling agent was changed to N-2- (aminoethyl) -3-aminopropyltrimethoxysilane. In the same manner as in Example 1, an evaluation test piece was obtained.

(Sample No. 5)
In place of the coupling agent treatment, sample No. 1 was used except that an inorganic coating treatment by vapor deposition of silicon oxide was performed. In the same manner as in Example 1, an evaluation test piece was obtained.

(Sample No. 6)
Sample No. 1 was used except that an inorganic alkali glass substrate was used as the carrier substrate. In the same manner as in Example 1, an evaluation test piece was obtained.

(Sample No. 7)
Sample No. 1 was used except that an inorganic alkali glass substrate was used as the carrier substrate. In the same manner as in Example 5, an evaluation test piece was obtained.

(Sample No. 8)
Except for omitting the surface treatment, sample no. In the same manner as in Example 1, an evaluation test piece was obtained.

(Sample No. 9)
Except for omitting the surface treatment, sample no. In the same manner as in Example 6, an evaluation test piece was obtained.

2. Evaluation of test piece for evaluation Each sample No. The evaluation test pieces were evaluated by the following method.

2.1 Total Light Transmittance Using a haze meter (NDH-2000, manufactured by Nippon Denshoku Co., Ltd.), the total light transmittance of each evaluation test piece at the D line (sodium line) was measured.

As a result, each sample No. All of the test pieces for evaluation had good total light transmittance of 60% or more.

2.2 Adhesiveness Each test piece for evaluation was subjected to a test in accordance with a tape adhesion test defined in ASTM D3359-B to evaluate the adhesiveness of the resin film to the carrier substrate.

As a result, in the test piece for evaluation subjected to the surface treatment, the evaluation of the adhesion was 4B or 5B, and the adhesion was good.

On the other hand, in the test piece for evaluation in which the surface treatment was omitted, the evaluation of the adhesion was 0B or 1B, and the adhesion was low.

From the above results, according to the present invention, for example, the resin film from the carrier substrate during the manufacturing process of the display device is obtained by partially increasing the adhesion force of at least a part of the plate surface (main surface) of the carrier substrate. Peeling can be suppressed. Moreover, after that, the resin film can be easily peeled from the carrier substrate by removing the portion having a high adhesion.

In addition, each sample No. mentioned above was replaced with a polyimide resin instead of a polyamide resin. A test piece for evaluation was produced in the same manner as described above.

When this test piece was evaluated, it was found that the adhesion was enhanced by the surface treatment as in the case of the polyamide-based resin.

In the method for producing an element laminated film of the present invention, a substrate having a main surface including a first portion and a second portion, and an adhesion force of the film to the first portion is greater than an adhesion force of the film to the second portion. A film provided in close contact with the main surface, a step of preparing a substrate with a film, a step of forming an element on the opposite side of the film from the substrate, and with the film A step of cutting the substrate with a film in a thickness direction so as to remove at least a part of a portion corresponding to the first portion of the substrate, and a step of separating the substrate and the film to obtain an element laminated film And have. Thereby, an element laminated film can be manufactured efficiently, without using a special apparatus.

DESCRIPTION OF SYMBOLS 1 Organic EL display device 7 Carrier board 8 Laminated body 9 Diamond cutter 10 Pixel circuit 50 Active matrix device 51 Data line 52 Selection line 53 Data drive circuit 54 Row selection circuit 55 Signal processing circuit 71 Upper surface 72 Inorganic coating 81 Removal part 82 Remaining part 200 Gate electrode 201 Gate insulating layer 202 Source electrode 203 Semiconductor layer 204 Drain electrode 300 Conductive portion 301 Planarizing layer 302 Anode 303 Hole transport layer 304 Light emitting layer 305 Electron transport layer 306 Cathode 400 Sealing layer 711 Edge portion 712 Central portion A Resin film A0 Resin solution B Thin film transistor C Light emitting element

Claims (10)

1. A substrate having a main surface including a first portion and a second portion, and a close contact with the main surface such that an adhesion force of the film to the first portion is larger than an adhesion force of the film to the second portion. A step of preparing a film-equipped substrate comprising:
   Forming an element on the opposite side of the film from the substrate;
   Cutting the substrate with film in the thickness direction so as to remove at least a part of the portion corresponding to the first portion of the substrate with film;
   Separating the substrate and the film from each other to obtain an element laminated film;
   A process for producing an element laminated film, comprising:
   
2. The step of preparing the substrate with film is as follows:
   Applying a surface treatment to the first portion of the main surface;
   Applying a resin solution on the main surface to form the film;
   The manufacturing method of the element laminated | multilayer film of Claim 1 which has these.
   
3. The method for producing an element laminated film according to claim 2, wherein the surface treatment is an inorganic coating treatment or a coupling agent treatment.
   
4. The method for producing an element laminated film according to claim 2 or 3, wherein the constituent material of the substrate is glass.
   
5. The method for producing an element laminated film according to claim 4, wherein the glass is soda glass or alkali-free glass.
   
6. The method for manufacturing an element laminated film according to claim 1, wherein the first portion is provided along an outer edge of the main surface.
   
7. The element laminated film manufacturing method according to claim 1, wherein the first part is provided so as to surround the second part.
   
8. The method for producing an element laminated film according to any one of claims 1 to 7, wherein the constituent material of the film is a polyamide-based resin.
   
9. An element laminated film manufactured by the element laminated film manufacturing method according to claim 1.
   
10. A display device comprising the element laminated film according to claim 9.

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