WO2015133235A1

WO2015133235A1 - Pattern forming method, etching method, method for manufacturing electronic device, and electronic device

Info

Publication number: WO2015133235A1
Application number: PCT/JP2015/053643
Authority: WO
Inventors: 亮介上羽; 直也井口; 山中　司
Original assignee: 富士フイルム株式会社
Priority date: 2014-03-04
Filing date: 2015-02-10
Publication date: 2015-09-11
Also published as: TW201535475A; JP2015169674A

Abstract

This pattern forming method is a method for forming a pattern wherein two or more different patterns are laid out in different regions. A first negative pattern is formed in a first region on a substrate, and a second negative pattern, which is different from the first negative pattern, is formed in a second region, which is different from the first region.

Description

PATTERN FORMING METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE

The present invention relates to a pattern forming method, an etching method using the pattern forming method, an electronic device manufacturing method including the pattern forming method, and an electronic device manufactured by the manufacturing method. More specifically, the present invention relates to a pattern forming method suitable for a semiconductor manufacturing process such as an IC, a manufacturing process of a circuit board such as a liquid crystal and a thermal head, a manufacturing process such as a MEMS, and further a lithography process of other photofabrication. And an etching method using the same. In particular, the present invention relates to a pattern forming method suitable for exposure in KrF, ArF exposure apparatus and ArF immersion projection exposure apparatus using far ultraviolet light having a wavelength of 300 nm or less as a light source, and an etching method using the same. The present invention also relates to a method for manufacturing an electronic device including the same, and an electronic device manufactured by the manufacturing method.

Conventionally, in order to form a high-resolution trench pattern, etc., a positive chemically amplified resist composition having various characteristics and versatility and a developer containing an organic solvent are combined. A negative development process (negative tone imaging process) has been proposed (see, for example, Patent Document 1).

JP 2008-292975 A International Publication No. 2012/157433

In recent years, with the demand for diversification and higher functionality of electronic devices, it has been required to form fine patterns of various shapes by etching or the like. For example, hole patterns and line patterns are different on a substrate. It is required to easily form a resist pattern laid out in a region or a resist pattern in which isolated line patterns and dense line patterns are mixed.
The present invention has been made in view of the above points, a pattern forming method capable of easily forming a pattern in which two or more different patterns are laid out in different regions, an etching method using the same, and An object of the present invention is to provide an electronic device manufacturing method including the same and an electronic device manufactured by the manufacturing method.

The present invention has the following configuration, which solves the above-described problems of the present invention.
[1] A pattern forming method for forming a pattern in which two or more different patterns are laid out in different regions,
(I) The following step (i-1), the following step (i-2) and the following step (i-3) are performed in this order to form a first negative pattern in the first region on the substrate. Process,
(I-1) An actinic ray-sensitive or radiation-sensitive resin composition (1) containing a resin having an increased polarity by the action of an acid and reduced solubility in a developer containing an organic solvent on the substrate. (I-2) a step of exposing the first film using a region other than the first region as a non-exposed portion. (I-3) the exposed first film. Developing with a developer containing an organic solvent to form the first negative pattern in the first region; and
(Iii) The following step (iii-1), the following step (iii-2), and the following step (iii-3) are performed in this order, and in a second region different from the first region on the substrate, Forming a second negative pattern different from the first negative pattern,
(Iii-1) An actinic ray-sensitive or radiation-sensitive resin composition (2) containing a resin having an increased polarity by the action of an acid and reduced solubility in a developer containing an organic solvent on the substrate. (Iii-2) a step of exposing the second film with a region other than the second region as a non-exposed portion (iii-3) the exposed second film Is developed using a developer containing an organic solvent to form the second negative pattern in the second region.
[2] The pattern forming method according to [1], further including a heating step (ii) between the step (i) and the step (iii).
[3] The actinic ray sensitive or radiation sensitive resin composition (1) is different from the actinic ray sensitive or radiation sensitive resin composition (2), according to [1] or [2]. Pattern forming method.
[4] The actinic ray sensitive or radiation sensitive resin composition (1) and the actinic ray sensitive or radiation sensitive resin composition (2) are the same as described in [1] or [2]. Pattern forming method.
[5] An etching method in which an etching process is performed on the substrate using the pattern formed by the pattern forming method according to any one of [1] to [4] as a mask.
[6] A method for manufacturing an electronic device, comprising the pattern forming method according to any one of [1] to [4].
[7] An electronic device manufactured by the method for manufacturing an electronic device according to [6].

According to the present invention, a pattern forming method capable of easily forming a pattern in which two or more different patterns are laid out in different regions, an etching method using the same, and a method for manufacturing an electronic device including the same, and An electronic device manufactured by this manufacturing method can be provided.

FIG. 1A to FIG. 1F are schematic cross-sectional views for explaining a pattern forming method according to an embodiment of the present invention. FIG. 2 is a plan view showing the first negative pattern 51 formed in the first region A1 on the substrate 10. FIG. 3 is a plan view showing a first negative pattern 51 formed in the first region A1 on the substrate 10 and a second negative pattern 61 formed in the second region A2 on the substrate 10. FIG. FIG. 4 is a plan view showing another embodiment of the present invention. FIG. 5 is a plan view showing another embodiment of the present invention. FIG. 6 is a plan view showing another embodiment of the present invention. FIG. 7 is a plan view showing still another embodiment of the present invention. FIG. 8 is a plan view showing still another embodiment of the present invention. FIG. 9 is a plan view showing still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail.
In the notation of a group (atomic group) in this specification, a notation that does not indicate substitution or non-substitution refers to a group (atomic group) having a substituent together with a group (atomic group) having no substituent. Is also included. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the present specification, “active light” or “radiation” means, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays represented by excimer laser, extreme ultraviolet rays (EUV light), X-rays, electron beams (EB), etc. To do. In the present invention, light means actinic rays or radiation.
In addition, “exposure” in the present specification is not limited to exposure to far ultraviolet rays, extreme ultraviolet rays, X-rays, EUV light and the like represented by mercury lamps and excimer lasers, but also electron beams, ion beams, and the like, unless otherwise specified. The exposure with the particle beam is also included in the exposure.

<Pattern formation method and etching method>
Below, the pattern formation method of this invention and the etching method using the same are demonstrated.
First, the pattern formation method of the present invention is a pattern formation method for forming a pattern in which two or more different patterns are laid out in different regions,
(I) The following step (i-1), the following step (i-2) and the following step (i-3) are performed in this order to form a first negative pattern in the first region on the substrate. Process and
(I-1) An actinic ray-sensitive or radiation-sensitive resin composition (1) containing a resin having an increased polarity by the action of an acid and reduced solubility in a developer containing an organic solvent on the substrate. (I-2) a step of exposing the first film using a region other than the first region as a non-exposed portion. (I-3) the exposed first film. Is developed using a developer containing an organic solvent to form the first negative pattern in the first region (iii) the following step (iii-1), the following step (iii-2) and The following steps (iii-3) are performed in this order, and a second negative pattern different from the first negative pattern is formed in a second region different from the first region on the substrate. Process,
(Iii-1) An actinic ray-sensitive or radiation-sensitive resin composition (2) containing a resin having an increased polarity by the action of an acid and reduced solubility in a developer containing an organic solvent on the substrate. (Iii-2) a step of exposing the second film with a region other than the second region as a non-exposed portion (iii-3) the exposed second film Is developed using a developer containing an organic solvent to form the second negative pattern in the second region in this order.

According to the pattern forming method of the present invention, after the first negative pattern is formed in the first region in the step (i), the second region is different from the first region in the step (iii). In order to form a negative pattern, for example, a hole pattern (first negative pattern) is laid out in the first area, and a line pattern (second negative pattern) is laid out in the second area. As described above, it is possible to easily form a resist pattern in which two or more different patterns are laid out in different regions.

Each of the first negative pattern and the second negative pattern includes a resist film part and a space part from which the resist film part is removed to expose the substrate. A shape and a size are not ask | required.
For example, a hole pattern in which circular hole portions as the space portions are formed at equal intervals in the row direction and the column direction, and a line and having a line space portion as well as a line shape line portion as the resist film portion. Examples include a space pattern, an isolated space pattern in which the area of the resist film portion is larger than the area of the line-shaped space portion.
Accordingly, from another viewpoint, the first negative pattern and the second negative pattern do not indicate only individual resist film portions (for example, one line portion) or space portions, but individual resist patterns. It can also be said to be an assembly of film portions or space portions.

However, the first region and the second region are different regions on the substrate, and the first negative pattern formed in the first region and the second negative type formed in the second region. Does not overlap with the pattern. For example, when both the first negative pattern and the second negative pattern are line and space patterns, the line portion of the second negative pattern is not formed in the space portion of the first negative pattern. .

By the way, in a method of forming a negative pattern by forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition containing a crosslinking agent, and dissolving an unexposed portion with an alkali developer after exposure. In some cases, the exposed portion made of a crosslinked product is easily swollen by an alkali developer, and it is difficult to form a fine pattern.
In contrast, in the present invention, the resins contained in the actinic ray-sensitive or radiation-sensitive resin compositions (1) and (2) both increase in polarity by the action of an acid and contain an organic solvent. It is a resin whose solubility in a developer (hereinafter, also simply referred to as “organic developer”) is reduced. By utilizing the difference in dissolution rate in an organic developer between an exposed area and an unexposed area, a negative Since the mold pattern is formed, even a fine pattern can be easily formed.

<One Embodiment of the Present Invention>
Next, a pattern forming method according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 1A to FIG. 1F are schematic cross-sectional views for explaining a pattern forming method according to an embodiment of the present invention.
FIG. 2 is a plan view showing the first negative pattern 51 formed in the first region A1 on the substrate 10.
FIG. 3 is a plan view showing a first negative pattern 51 formed in the first region A1 on the substrate 10 and a second negative pattern 61 formed in the second region A2 on the substrate 10. FIG.

<Process (i): Formation of first negative pattern>
In step (i), as shown in FIGS. 1 (a) to 1 (c), the following step (i-1), the following step (i-2) and the following step (i-3) are performed in this order. Then, the first negative pattern 51 having a plurality of hole portions (space portions) arranged at equal intervals in the row direction and the column direction is formed in the first region A1 on the substrate 10, for example.

<Step (i-1): Formation of first film>
In the step (i-1), as shown in FIG. 1 (a), an active material containing a resin on the substrate 10 whose polarity is increased by the action of an acid and whose solubility in a developer containing an organic solvent is reduced. In this step, a resist film (first film 50) is formed using the light-sensitive or radiation-sensitive resin composition (1).
In step (i-1), the first film 50 may be formed in the entire region on the substrate 10 as shown in FIG. 1A, or in a part of the region including the first region A1. May be formed only.

The substrate is not particularly limited, and an inorganic substrate such as silicon, SiO ₂ or SiN, a coated inorganic substrate such as SOG (Spin On Glass), a semiconductor manufacturing process such as an IC, a circuit such as a liquid crystal or a thermal head A substrate generally used in a substrate manufacturing process, and also in other photofabrication lithography processes can be used. Furthermore, if necessary, an underlayer film such as an antireflection film may be formed between the first film and the substrate. As the lower layer film, an organic antireflection film, an inorganic antireflection film, and the like can be appropriately selected. The underlayer film material is available from Brewer Science, Nissan Chemical Industries, Ltd. As a lower layer film suitable for the process of developing using a developer containing an organic solvent, for example, a lower layer film described in WO2012 / 039337A can be mentioned.

In the step (i-1), the method of forming the first film using the actinic ray-sensitive or radiation-sensitive resin composition (1) typically comprises an actinic ray-sensitive or radiation-sensitive resin composition. The material (1) can be applied on the substrate, and as a coating method, a conventionally known spin coating method, spray method, roller coating method, dipping method or the like can be used. An actinic ray-sensitive or radiation-sensitive resin composition (1) is applied.
The actinic ray-sensitive or radiation-sensitive resin composition (1) will be described later in detail.

The thickness of the first film is preferably 20 to 160 nm, more preferably 50 to 140 nm, and still more preferably 60 to 120 nm.

<Pre-heating step and post-exposure heating step>
The pattern forming method of the present invention preferably includes a preheating step (PB; Prebake) between the step (i-1) and the step (i-2).
In addition, the pattern forming method of the present invention preferably includes a post-exposure heating step (PEB; Post Exposure Bake) between the step (i-2) and the step (i-3).
The heating temperature is preferably 70 to 130 ° C., more preferably 80 to 120 ° C. for both PB and PEB.
The heating time is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds.
Heating can be performed by means provided in a normal exposure / developing machine, and may be performed using a hot plate or the like.
The reaction of the exposed part is promoted by baking, and the sensitivity and pattern profile are improved.
The preheating step and / or the post-exposure heating step may include a plurality of heating steps.

<Step (i-2): Exposure of first film>
In step (i-2), as shown in FIG. 1B, the first film 50 is exposed using a region other than the first region A1 (including the second region A2) as a non-exposed portion. It is a process.
At this time, the actinic ray-sensitive or radiation-sensitive resin composition (1) forming the first film 50 is a resin whose polarity is increased by the action of an acid and its solubility in an organic developer is reduced, As will be described later, it usually contains a compound that generates an acid upon irradiation with actinic rays or radiation. For this reason, in the exposed part (first area A1) of the first film 50, an acid is generated, the polarity is increased by the action of the generated acid, and the solubility in the organic developer is decreased. Thus, in the step (i-3) to be described later, when development is performed using an organic developer, the non-exposed portion (second region A2) of the first film 50 is removed and the exposed portion is the first portion. A first negative pattern 51 is formed in one area A1.
However, the step (i-2) is not a step in which only the region other than the first region A1 is set as a non-exposed portion. That is, in the present invention, a space portion is also formed (patterned) in the first film 50 existing in the first region A1, and naturally, in the first region A1, there is no place corresponding to the space portion. A non-exposed portion is formed.

In the exposure of step (i-2), the wavelength of the light source used in the exposure apparatus is not limited, but examples include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-rays, and electron beams. Preferably, far ultraviolet light having a wavelength of 250 nm or less, more preferably 220 nm or less, particularly preferably 1 to 200 nm, specifically, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157 nm), X-ray, EUV (13 nm), electron beam, and the like, preferably KrF excimer laser, ArF excimer laser, EUV or electron beam.
Step (i-2) may include a plurality of exposure steps.

For example, when the light source is a KrF excimer laser, an ArF excimer laser, or EUV, it is preferable to irradiate (that is, expose) active light or radiation through a mask.
At this time, in the present embodiment, for example, as shown in FIG. 1B, as a mask M1, a hole pattern mask having a plurality of hole portions arranged at equal intervals in the row direction and the column direction as light shielding portions. Can be used.
However, in the present invention, the mask used in the step (i-2) is not limited to this, and can be appropriately selected according to the desired shape of the first negative pattern, for example, a line portion as a light shielding portion, It is also possible to use a mask having a line-and-space pattern having a space portion as a light transmission portion and having a ratio of the width of the line portion to the width of the space portion of 1: 1.

In the exposure of step (i-2), an immersion exposure method can be applied.
The immersion exposure method is a technique for increasing the resolving power and performing exposure by filling a space between a projection lens and a sample with a liquid having a high refractive index (hereinafter also referred to as “immersion liquid”). In addition, immersion exposure can be combined with super-resolution techniques such as phase shift method and modified illumination method.

When performing immersion exposure, (1) after the first film is formed on the substrate, before the exposure step and / or (2) the first film is exposed via the immersion liquid. After the step, before the step of heating the first film, a step of washing the surface of the first film with an aqueous chemical solution may be performed.

The immersion liquid is preferably a liquid that is transparent to the exposure wavelength and has a refractive index temperature coefficient as small as possible so as to minimize distortion of the optical image projected onto the first film. It is preferable to use water from the viewpoint of easy availability and ease of handling.

When water is used, an additive (liquid) that reduces the surface tension of water and increases the surface activity may be added in a small proportion. This additive is preferably an additive that does not dissolve the resist layer on the wafer and can ignore the influence on the optical coating on the lower surface of the lens element.
As such an additive, for example, an aliphatic alcohol having a refractive index substantially equal to that of water is preferable, and specific examples include methyl alcohol, ethyl alcohol, isopropyl alcohol and the like. By adding an alcohol having a refractive index substantially equal to that of water, even if the alcohol component in water evaporates and the content concentration changes, an advantage that the change in the refractive index of the entire liquid can be made extremely small can be obtained.

On the other hand, when an opaque substance or impurities whose refractive index is significantly different from that of water are mixed with respect to 193 nm light, the optical image projected on the resist is distorted. Therefore, distilled water is preferable as the water to be used. Further, pure water filtered through an ion exchange filter or the like may be used.
Moreover, it is possible to improve lithography performance by increasing the refractive index of the immersion liquid. From such a viewpoint, an additive that increases the refractive index may be added to water, or heavy water (D ₂ O) may be used instead of water.

When the first film formed using the actinic ray-sensitive or radiation-sensitive resin composition (1) is exposed through an immersion medium, the hydrophobic resin (D) described later is further provided as necessary. Can be added. By adding the hydrophobic resin (D), the receding contact angle of the surface is improved. The receding contact angle of the first film is preferably 60 ° to 90 °, more preferably 70 ° or more.
In the immersion exposure process, the immersion head needs to move on the wafer following the movement of the exposure head scanning the wafer at high speed to form the exposure pattern, so that the dynamic state is reached. In this case, the contact angle of the immersion liquid with respect to the resist film (first film) becomes important, and the resist is required to follow the high-speed scanning of the exposure head without remaining droplets.

Since the film is not directly contacted with the immersion liquid between the first film formed using the actinic ray-sensitive or radiation-sensitive resin composition (1) and the immersion liquid, it is difficult to make the immersion liquid. A soluble film (hereinafter also referred to as “top coat”) may be provided. Functions necessary for the top coat include suitability for application to the resist upper layer, transparency to radiation, particularly radiation having a wavelength of 193 nm, and poor immersion liquid solubility. It is preferable that the top coat is not mixed with the resist and can be uniformly applied to the resist upper layer.
From the viewpoint of transparency at 193 nm, the topcoat is preferably a polymer that does not contain aromatics.
Specific examples include hydrocarbon polymers, acrylic ester polymers, polymethacrylic acid, polyacrylic acid, polyvinyl ether, silicon-containing polymers, and fluorine-containing polymers. The above-mentioned hydrophobic resin (D) is also suitable as a top coat. When impurities are eluted from the top coat into the immersion liquid, the optical lens is contaminated. Therefore, it is preferable that the residual monomer component of the polymer contained in the top coat is small.

When peeling the top coat, a developer may be used, or a separate release agent may be used. As the release agent, a solvent having a small penetration into the first film is preferable. It is preferable that the peeling process can be carried out with an alkali developer in that the peeling process can be performed simultaneously with the development process of the first film. The top coat is preferably acidic from the viewpoint of peeling with an alkali developer, but may be neutral or alkaline from the viewpoint of non-intermixability with the first film.
There is preferably no or small difference in refractive index between the top coat and the immersion liquid. In this case, the resolution can be improved. When the exposure light source is an ArF excimer laser (wavelength: 193 nm), it is preferable to use water as the immersion liquid. Therefore, the top coat for ArF immersion exposure is close to the refractive index of water (1.44). preferable. Moreover, it is preferable that a topcoat is a thin film from a viewpoint of transparency and a refractive index.

It is preferable that the top coat is not mixed with the first film and further not mixed with the immersion liquid. From this viewpoint, when the immersion liquid is water, the solvent used for the topcoat is the actinic ray-sensitive or radiation-sensitive resin composition (hereinafter also referred to as “resin composition”) in the present invention. It is preferably a medium that is hardly soluble in the solvent used and is insoluble in water. Further, when the immersion liquid is an organic solvent, the topcoat may be water-soluble or water-insoluble.

In addition, the illumination light source shape in the exposure of step (i-2) includes, in addition to normal illumination, for example, dipole illumination, quadrupole illumination, annular illumination, special deformation illumination, etc., depending on the desired pattern, The optimal illumination light source shape can be selected.
For example, quadrupole illumination is preferably used when a pattern mask including a hole pattern region is used, and dipole illumination is preferably used when a pattern mask including a line and space pattern is used. In addition, whether it is a hole pattern mask or a line and space pattern mask, a pattern mask (for example, a pattern mask in which an isolated space pattern is formed) in which the area of the light transmission part is larger than the area of the light shielding part is used. In some cases, normal illumination is preferably used.
In this embodiment, since the first negative pattern is a hole pattern, in this case, quadrupole illumination is preferable.

<Step (i-3): Development of first film>
In step (i-3), as shown in FIG. 1C, the exposed first film 50 is developed using a developer containing an organic solvent, and the first negative type is formed in the first area A1. This is a step of forming the pattern 51.
As described above, in step (i-2), the exposed portion of the first film 50 has reduced solubility in a developer containing an organic solvent. For this reason, in the step (i-3), by developing using a developer containing an organic solvent, the non-exposed portion of the first film 50 is removed, and the first negative pattern 51 is formed. The
In the present embodiment, as shown in FIGS. 1C and 2, a first negative pattern 51 that is a hole pattern is formed in the first region A1 on the substrate 10.

In the step (i-3), the first film is developed using a developer containing an organic solvent to form a negative pattern. Examples of the developer include ketone solvents, ester solvents, alcohols. Polar solvents and hydrocarbon solvents such as system solvents, amide solvents and ether solvents can be used.
Examples of ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone (methyl amyl ketone), 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, Examples include cyclohexanone, methylcyclohexanone, phenylacetone, methylethylketone, methylisobutylketone, acetylacetone, acetonylacetone, ionone, diacetylalcohol, acetylcarbinol, acetophenone, methylnaphthylketone, and isophorone.
Examples of ester solvents include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, cyclohexyl acetate, isobutyl isobutyrate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol Monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, Examples thereof include butyl lactate, propyl lactate, and propylene carbonate.
Examples of the alcohol solvents include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, alcohols such as n-octyl alcohol and n-decanol, glycol solvents such as ethylene glycol, diethylene glycol and triethylene glycol, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, Diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, methoxymethyl butano It can be mentioned glycol ether solvents such as Le.
Examples of the ether solvent include dioxane, tetrahydrofuran, phenetole, dibutyl ether and the like in addition to the glycol ether solvent.
Examples of amide solvents include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, hexamethylphosphoric triamide, 1,3-dimethyl-2-imidazolidinone and the like. Can be used.
Examples of the hydrocarbon solvent include aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane.
A plurality of the above solvents may be mixed, or may be used by mixing with a solvent other than those described above or water. However, in order to fully exhibit the effects of the present invention, the water content of the developer as a whole is preferably less than 10% by mass, and more preferably substantially free of moisture.
That is, the amount of the organic solvent used in the organic developer is preferably 90% by mass or more and 100% by mass or less, and more preferably 95% by mass or more and 100% by mass or less, with respect to the total amount of the developer.
In particular, the organic developer is preferably a developer containing at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents. .

The vapor pressure of the organic developer is preferably 5 kPa or less, more preferably 3 kPa or less, and particularly preferably 2 kPa or less at 20 ° C. By setting the vapor pressure of the organic developer to 5 kPa or less, the evaporation of the developer on the substrate or in the developing cup is suppressed, and the temperature uniformity in the wafer surface is improved. As a result, the dimensions in the wafer surface are uniform. Sexuality improves.
Specific examples having a vapor pressure of 5 kPa or less include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 2-heptanone (methyl amyl ketone), 4-heptanone, 2-hexanone, diisobutyl ketone, Ketone solvents such as cyclohexanone, methylcyclohexanone, phenylacetone, methyl isobutyl ketone, butyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, cyclohexyl acetate, isobutyl isobutyrate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol Monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl -3-Methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate and other ester solvents, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, Alcohol solvents such as isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol, n-decanol, glycol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monomethyl ether, propylene glycol monomethyl Ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene Glycol ether solvents such as recall monoethyl ether and methoxymethylbutanol, ether solvents such as tetrahydrofuran, phenetol and dibutyl ether, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide amide And aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as octane and decane.
Specific examples having a vapor pressure of 2 kPa or less, which is a particularly preferable range, include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, and methylcyclohexanone. , Ketone solvents such as phenylacetone, butyl acetate, amyl acetate, cyclohexyl acetate, isobutyl isobutyrate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3- Ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate, propyl lactate, etc. Ester solvents, alcohol solvents such as n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol, n-decanol, ethylene glycol, diethylene glycol , Glycol solvents such as triethylene glycol, and glycols such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, methoxymethyl butanol Ether solvents, ether solvents such as phenetol and dibutyl ether, N-methyl- - pyrrolidone, N, N- dimethylacetamide, N, N-dimethylformamide amide solvents, aromatic hydrocarbon solvents such as xylene, octane, aliphatic hydrocarbon solvents decane.

An appropriate amount of a surfactant can be added to the organic developer as required.
The surfactant is not particularly limited, and for example, ionic or nonionic fluorine-based and / or silicon-based surfactants can be used. Examples of these fluorine and / or silicon surfactants include, for example, JP-A No. 62-36663, JP-A No. 61-226746, JP-A No. 61-226745, JP-A No. 62-170950, JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, US Pat. No. 5,405,720, The surfactants described in the specifications of US Pat. Preferably, it is a nonionic surfactant. Although it does not specifically limit as a nonionic surfactant, It is still more preferable to use a fluorochemical surfactant or a silicon-type surfactant.
The amount of the surfactant used is usually from 0.001 to 5% by mass, preferably from 0.005 to 2% by mass, more preferably from 0.01 to 0.5% by mass, based on the total amount of the developer.
Further, an embodiment in which a nitrogen-containing compound (amine or the like) is added to an organic developer as in the invention according to the claim of Japanese Patent No. 5056974 can be preferably used.

<Alkali development process>
In addition, the pattern forming method of the present invention is performed between step (i-2) and step (i-3) or between step (i-3) and step (iii-1) (steps described later ( In the case of carrying out ii), a step of developing with an alkaline developer may be further provided between step (i-3) and step (ii).

When the pattern forming method of the present invention further includes a step of developing using an alkali developer, examples of the alkali developer include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia. Inorganic alkalis such as water, primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, dimethylethanolamine, Alkaline aqueous solutions such as alcohol amines such as ethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, and cyclic amines such as pyrrole and piperidine can be used.
Furthermore, an appropriate amount of alcohol or surfactant may be added to the alkaline aqueous solution. Examples of the surfactant include the above-described surfactants. The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass.
The pH of the alkali developer is usually from 10.0 to 15.0.
In particular, an aqueous solution of 2.38% by mass of tetramethylammonium hydroxide is desirable.

As a developing method, for example, a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which the developer is raised on the surface of the substrate by surface tension and is left stationary for a certain time (paddle) Method), a method of spraying the developer on the substrate surface (spray method), a method of continuously discharging the developer while scanning the developer discharge nozzle on the substrate rotating at a constant speed (dynamic dispensing method) Etc. can be applied.
When the various development methods described above include a step of discharging the developer from the developing nozzle of the developing device toward the resist film, the discharge pressure of the discharged developer (the flow rate per unit area of the discharged developer) is Preferably it is 2 mL / sec / mm ² or less, More preferably, it is 1.5 mL / sec / mm ² or less, More preferably, it is 1 mL / sec / mm ² or less. There is no particular lower limit on the flow rate, but 0.2 mL / sec / mm ² or more is preferable in consideration of throughput.
By setting the discharge pressure of the discharged developer to be in the above range, pattern defects derived from the resist residue after development can be remarkably reduced. This is described in detail in Japanese Patent Application Laid-Open No. 2010-232550.
The developer discharge pressure (mL / sec / mm ² ) is a value at the developing nozzle outlet in the developing device.

Examples of the method for adjusting the discharge pressure of the developer include a method of adjusting the discharge pressure with a pump or the like, and a method of changing the pressure by adjusting the pressure by supply from a pressurized tank.

Further, after the step of developing using a developer containing an organic solvent, a step of stopping development may be performed while substituting with another solvent.

<Rinse process>
The pattern forming method of the present invention comprises a step (i-3) and a step (ii) between step (i-3) and step (iii-1) (when step (ii) described later is performed) It is preferable that a step (rinsing step) of washing with a rinsing solution containing an organic solvent is included after the step of developing with a developing solution containing an organic solvent.

The rinsing solution used in the rinsing step after the step of developing with a developer containing an organic solvent is not particularly limited as long as the resist pattern is not dissolved, and a solution containing a general organic solvent can be used. . As the rinse liquid, a rinse liquid containing at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents is used. It is preferable.
Specific examples of the hydrocarbon solvent, the ketone solvent, the ester solvent, the alcohol solvent, the amide solvent, and the ether solvent include the same solvents as described in the developer containing an organic solvent.
More preferably, it contains at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, and amide solvents after the step of developing using a developer containing an organic solvent. A step of washing with a rinsing liquid is performed, more preferably, a step of washing with a rinsing liquid containing an alcohol solvent or an ester solvent is carried out, and particularly preferably, a rinsing liquid containing a monohydric alcohol is used. And, most preferably, the step of cleaning with a rinse solution containing a monohydric alcohol having 5 or more carbon atoms is performed.
Here, examples of the monohydric alcohol used in the rinsing step include linear, branched, and cyclic monohydric alcohols. Specific examples include 1-butanol, 2-butanol, and 3-methyl-1-butanol. Tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2-heptanol, 2 -Octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol and the like can be used, and particularly preferable monohydric alcohols having 5 or more carbon atoms are 1-hexanol, 2-hexanol, 4-methyl- Use 2-pentanol, 1-pentanol, 3-methyl-1-butanol, etc. It can be.

A plurality of the above components may be mixed, or may be used by mixing with an organic solvent other than the above.

The water content in the rinse liquid is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less. By setting the water content to 10% by mass or less, good development characteristics can be obtained.

The vapor pressure of the rinsing solution used after the step of developing with a developer containing an organic solvent is preferably 0.05 kPa or more and 5 kPa or less, more preferably 0.1 kPa or more and 5 kPa or less at 20 ° C. 12 kPa or more and 3 kPa or less are the most preferable. By setting the vapor pressure of the rinse liquid to 0.05 kPa or more and 5 kPa or less, the temperature uniformity in the wafer surface is improved, and further, the swelling due to the penetration of the rinse solution is suppressed, and the dimensional uniformity in the wafer surface. Improves.

When the pattern forming method of the present invention further includes a step of developing with an alkaline developer, it is preferable to include a step of rinsing with a rinsing solution (rinsing step). As the rinsing liquid in this case, pure water is used, and an appropriate amount of a surfactant can be added and used.

The cleaning method in the rinsing step is not particularly limited. For example, a method of continuously discharging a rinsing liquid onto a substrate rotating at a constant speed (rotary coating method), a substrate in a bath filled with the rinsing liquid Can be applied for a certain period of time (dip method), a method of spraying a rinsing liquid on the substrate surface (spray method), etc. Among them, a cleaning process is performed by a spin coating method, and the substrate is washed at 2000 rpm or more after cleaning. It is preferable to rotate at a rotational speed of 4000 rpm to remove the rinse liquid from the substrate. It is also preferable to include a heating step (Post Bake) after the rinsing step. The developing solution and the rinsing solution remaining between the patterns and inside the patterns are removed by baking. The heating step after the rinsing step is usually performed at 40 to 160 ° C., preferably 70 to 95 ° C., usually 10 seconds to 3 minutes, preferably 30 seconds to 90 seconds.

Further, after the developing process or the rinsing process, it is possible to perform a process of removing the developing solution or the rinsing liquid adhering to the pattern with a supercritical fluid.

<Process (ii): Heating process>
Between the step (i-3) and the step (iii-1) described in detail later, a heating step (ii)
May be implemented. As a result, the solvent resistance of the first negative pattern formed in the step (i-3) can be further improved, and in the subsequent step (iii-1), an active sensitivity is formed on the first negative pattern. Even if it applies the liquid which consists of a light sensitive or radiation sensitive resin composition (2), it can convert into the 1st negative pattern which is hard to receive damage.
The temperature in this heating step is preferably 150 ° C. or higher, and more preferably 170 ° C. or higher. The said temperature is normally made into 240 degrees C or less. The heating time in this heating step is about 30 to 120 seconds. It is preferable that the heating step be performed in such a temperature range and time, since it is considered that the decomposition residue of the organic matter volatilizes and becomes insoluble in the solvent.

The first negative pattern 51 contains a resin whose polarity is increased by the action of an acid and has reduced solubility in a developer containing an organic solvent, and has sufficient solvent resistance. Although application is not required, the present invention does not exclude the application of a known freezing material to the first negative pattern.

<Step (iii): Formation of second negative pattern>
Next, in the step (iii), as shown in FIGS. 1 (d) to 1 (f), the following step (iii-1), the following step (iii-2) and the following step (iii-3) are carried out. In this order, a second negative pattern 61 different from the first negative pattern 51 is formed in a second area A2 different from the first area A1 on the substrate 10.

<Step (iii-1): Formation of second film>
In step (iii-1), as shown in FIG. 1 (d), an active material containing a resin on the substrate 10 whose polarity is increased by the action of an acid and whose solubility in a developer containing an organic solvent is reduced. In this step, a resist film (second film 60) is formed using the light-sensitive or radiation-sensitive resin composition (2).
In the step (iii-1), the second film 60 may be formed only in the second region A2 on the substrate 10, or the first negative pattern 51 as shown in FIG. It may also be formed in the space portion.

In the step (iii-1), the method of forming the second film using the actinic ray-sensitive or radiation-sensitive resin composition (2) is the same as the step (i-1) in which the actinic ray-sensitive or radiation-sensitive material is formed. This is the same as the method of forming the first film using the conductive resin composition (1).
The actinic ray-sensitive or radiation-sensitive resin composition (2) will be described in detail later.

The preferable range of the thickness of the second film is the same as the range described as the preferable range of the thickness of the first film, but the thickness of the second film is the same as the thickness of the first film. May be different.

<Pre-heating step and post-exposure heating step>
The pattern forming method of the present invention preferably includes a preheating step (PB; Prebake) between the step (iii-1) and the step (iii-2).
In addition, the pattern forming method of the present invention preferably includes a post-exposure heating step (PEB; Post Exposure Bake) between the step (iii-2) and the step (iii-3). The heating temperature is preferably 70 to 130 ° C., more preferably 80 to 120 ° C. for both PB and PEB.
The heating time is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and still more preferably 30 to 90 seconds.
Heating can be performed by means provided in a normal exposure / developing machine, and may be performed using a hot plate or the like.
The reaction of the exposed part is promoted by baking, and the sensitivity and pattern profile are improved.
The preheating step and / or the post-exposure heating step may include a plurality of heating steps.

<Step (iii-2): Exposure of second film>
Step (iii-2) is a step of exposing the second film 60 using a region other than the second region A2 as a non-exposed portion as shown in FIG.
At this time, the actinic ray-sensitive or radiation-sensitive resin composition (2) forming the second film 60 is a resin whose polarity is increased by the action of an acid and its solubility in an organic developer is decreased, As will be described later, it usually contains a compound that generates an acid upon irradiation with actinic rays or radiation. Therefore, an acid is generated in the exposed portion (second region A2) of the second film 60, and the polarity is increased by the action of the generated acid, so that the solubility in the organic developer is decreased. Thus, in the later-described step (iii-3), when development is performed using an organic developer, the non-exposed portion of the second film 60 (the second portion formed in the space portion of the first negative pattern 51). The second film 60) is removed, and a second negative pattern 61 is formed in the second region A2 that was the exposed portion.
However, step (iii-2) is not a step in which only the region other than the second region A2 is set as a non-exposed portion. That is, in the present invention, since the space portion is also formed in the second film 60 existing in the second region A2, naturally, in the second region A2, the non-exposed portion is not provided at the location corresponding to the space portion. It is formed.

As in step (i-2), for example, when the light source is a KrF excimer laser, an ArF excimer laser, or EUV, as shown in FIG. Irradiation (that is, exposure) is preferable.
The mask pattern in the mask M2 in the step (iii-2) is not particularly limited as long as it is a mask pattern different from the mask M1 used in the step (i-2). A mask having a line part as a part and a space part as a light transmission part and having a pattern (isolated trench pattern) in which the area of the light transmission part is larger than the area of the light shielding part is used.
However, like the mask used in the step (i-2), the mask in the step (iii-2) is not limited to the above-described mask, and depends on the shape of the desired second negative pattern, etc. It can be selected as appropriate.

As the exposure method in the step (iii-2), the method described in the exposure in the step (i-2) can be similarly employed.
As in the step (i-2), the illumination light source shape in the exposure in the step (iii-2) includes, for example, normal illumination, dipole illumination, quadrupole illumination, annular illumination, special deformation illumination, and the like. The optimal illumination light source shape can be selected according to the desired pattern.
In the present embodiment, since the second negative pattern is an isolated space pattern, normal illumination is preferable in this case.

<Step (iii-3): Development of second film>
In step (iii-3), as shown in FIG. 1F, the exposed second film 60 is developed using a developer containing an organic solvent, and the second negative type is formed in the second region A2. This is a step of forming the pattern 61.
As the developer and the developing method in the organic developer in the step (iii-3), the developer and the developing method described in the organic developer in the step (i-3) can be used similarly.

As described above, in the step (iii-2), the solubility of the exposed portion of the second film 60 in the organic developer is reduced. Therefore, in the step (iii-3), by developing using an organic developer, the non-exposed portion of the second film 60 is removed, and the second negative pattern 61 is formed.
Thus, in this embodiment, as shown in FIGS. 1F and 3, the first negative pattern 51 that is a hole pattern and the second negative pattern 61 that is an isolated space pattern are formed on the substrate 10. Are formed in different regions.
Needless to say, the resist pattern formed by the pattern forming method of the present invention is not limited to this.

<Alkali development process>
The pattern forming method of the present invention further includes a step of developing using an alkali developer between step (iii-2) and step (iii-3) or after step (iii-3). You may do it.
In the alkali development step performed between step (iii-2) and step (iii-3) or after step (iii-3), an alkali developer similar to the alkali developer described above can be used.

Further, in the alkali development step performed between step (iii-2) and step (iii-3) or after step (iii-3), an alkali development method similar to the alkali development method described above is employed. it can.

<Rinse process>
The pattern forming method of the present invention is a step of washing with a rinse solution containing an organic solvent after the step (iii-3), that is, after developing with a developer containing an organic solvent. (Rinse process) is preferably included. As the rinsing liquid in this case, the rinsing liquid described in the step of rinsing with the rinsing liquid containing the organic solvent (rinsing step) that may be included after the step of developing with the developing solution containing the organic solvent is used. It can be used similarly.

In addition, the pattern forming method of the present invention further includes a step of developing using an alkaline developer between step (iii-2) and step (iii-3) or after step (iii-3). In this case, it is preferable to include a step of rinsing with a rinsing solution (rinsing step) after the step of developing with an alkaline developer. As the rinsing liquid in this case, pure water is used, and an appropriate amount of a surfactant can be added and used.

The above-mentioned method can be similarly mentioned as the cleaning method in these rinsing steps.

<Etching treatment>
Next, using the resist pattern (resist pattern made up of the first negative pattern 51 and the second negative pattern 61) formed as described above in which different patterns are laid out in different regions, a mask is formed on the substrate 10. On the other hand, an etching process is performed. Thereby, in the present embodiment, a substrate 10 in which positions corresponding to the hole portion of the first negative pattern 51 and the space portion of the second negative pattern 61 are perforated is obtained (perforated substrate). 10 is not shown).

The method for the etching treatment is not particularly limited, and any known method can be used, and various conditions and the like are appropriately determined according to the type and use of the substrate. For example, Bulletin of the International Society of Optical Engineering (Proc. Of SPIE) Vol. 6924, 692420 (2008), Japanese Patent Application Laid-Open No. 2009-267112, and the like can be performed.

<Modification>
Further, the first negative pattern and / or the second negative pattern in the present embodiment described above may be formed by performing patterning of the resist film twice or more.
In other words, the pattern forming step in which the step (i) of forming the first negative pattern includes the step (i-1), the step (i-2), and the step (i-3) in this order. May be included multiple times.
Similarly, the step (iii) of forming the second negative pattern includes a pattern forming step including the step (iii-1), the step (iii-2), and the step (iii-3) in this order. It may be included multiple times.
In this case, a plurality of pattern forming steps may further include a heating step between two successive pattern forming steps.

Hereinafter, the modified example will be specifically described.
First, by performing the steps (i-1), (i-2), and (i-3) in this order by the same method as described above, a first negative pattern is formed on the substrate as follows. For example, a line and space pattern having a line width and a space width of 1: 3 is formed.
Next, by performing step (i-1), step (i-2) and step (i-3) in this order, the first negative pattern has, for example, a line width and a space width of 1: 3 line and space patterns are formed.
Specifically, in the subsequent pattern formation, the line portion of the line and space pattern is formed in the space portion of the line and space pattern formed in the previous pattern formation step.
As a result, the line and space pattern formed in the previous pattern formation process and the line and space pattern formed in the subsequent pattern formation process are formed on the substrate. A 1: 1 first negative pattern is formed.
Next, a heating step (a so-called freezing step) may be performed.

<Other embodiments>
In the embodiment described above, the hole pattern is formed as the first negative pattern in the step (i) and the line pattern is formed as the second negative pattern in the step (iii). A line pattern may be formed in (i), and a hole pattern may be formed in step (iii).
As described above, the first negative pattern and the second negative pattern are not limited to the patterns described above.
For example, both the first negative pattern and the second negative pattern may be line patterns, and the first negative pattern line and the second negative pattern line are not parallel, For example, the pattern may be a vertical pattern (see, for example, FIGS. 5 and 8 described later).
In addition, both the first negative pattern and the second negative pattern are hole patterns, and the first negative pattern and the second negative pattern are mutually aligned with each other, It may be a pattern in which at least one of the pitches is different.

In the above-described embodiment, half of the rectangular area on the substrate is the first area and the other half is the second area. However, the method of dividing the area is not limited to this.
4 to 6 are plan views showing other embodiments of the present invention. 4 to 6, in the rectangular area on the substrate 10, the rectangular first area A1 occupies the center, and the first area A1 is surrounded by the second area A2.
In FIG. 4, a hole pattern (preferably quadrupole illumination) is formed as the first negative pattern 51, and an isolated space pattern (normal illumination is preferable) as a line pattern is formed as the second negative pattern 61. Yes.
In FIG. 5, a line and space pattern (preferably dipolar illumination) is formed as the first negative pattern 51, and an isolated space pattern (normal illumination) is formed as the second negative pattern 61. Is preferred). In FIG. 5, the lines of the first negative pattern and the lines of the second negative pattern are non-parallel and perpendicular.
In FIG. 6, a line-and-space pattern (preferably bipolar illumination) is formed as the first negative pattern 51, and a hole pattern (a hole portion being a space portion is formed as the second negative pattern 61). An isolated space pattern) is formed (usually illumination is preferred).

In the above-described embodiment, the mode in which two different patterns are formed in two different regions has been described. However, the present invention is not limited to this, and three or more different patterns are formed in three or more different regions. It may be formed.
In this case, if the second negative pattern is formed in the step (iii) and the first negative pattern is formed in the step (i), then the second negative pattern is formed in the step (iii). By forming the negative pattern, a pattern in which three different patterns are arranged in three different regions can be formed.
Or it thinks that the pattern formation method of this invention may have one or more processes similar to process (i) or process (iii) after process (i) and process (iii). You can also.
7 to 9 are plan views showing still another embodiment of the present invention. 7 to 9, three different patterns are formed in three different areas. Specifically, in the rectangular area on the substrate 10, the rectangular first area A1 is arranged at the lower left in the figure. The third area A3 occupies the center of the upper half in the figure, and the rest is the second area A2.
In FIG. 7, a hole pattern (preferably quadrupole illumination) is formed as the first negative pattern 51, and an isolated space pattern that is a line pattern (normal illumination is preferable) is formed as the second negative pattern 61. As the third negative pattern 71, a line-and-space pattern (dipole illumination is preferable) which is a line pattern is formed.
In FIG. 8, a line and space pattern (preferably bipolar illumination) is formed as the first negative pattern 51, and a hole pattern (a hole portion that is a space portion is formed) as the second negative pattern 61. An isolated space pattern (isolated illumination is preferable) is formed, and a line-and-space pattern (preferably bipolar illumination) that is a line pattern is formed as the third negative pattern 71. In FIG. 8, the first negative pattern line and the third negative pattern line are non-parallel and perpendicular to each other.
In FIG. 9, a line-and-space pattern (preferably bipolar illumination) is formed as the first negative pattern 51, and a hole pattern (a hole part that is a space part is formed) as the second negative pattern 61. An isolated space pattern (isolated illumination is preferable) is formed, and an isolated space pattern that is a line pattern (normal illumination is preferable) is formed as the third negative pattern 71.

Although the pattern forming method and the etching method of the present invention have been described above, according to the present invention, it is possible to form a pattern in which different patterns are laid out in different regions on a substrate by etching or the like.

In addition, the pattern obtained by the pattern forming method of the present invention is applied to a spacer process core material (core) as disclosed in JP-A-3-270227 and JP-A-2013-164509. Is also possible. Furthermore, it can also be suitably used for guide pattern formation in DSA (Directed Self-Assembly) (see, for example, ACS NanoVol.4 No.8 Page4815-4823). In addition, application to various uses is possible.

In addition, this invention relates also to the manufacturing method of an electronic device containing the pattern formation method of this invention mentioned above, and the electronic device manufactured by this manufacturing method.
The manufactured electronic device is preferably mounted on an electric / electronic device (home appliance, OA / media related device, optical device, communication device, etc.).

<Actinic ray-sensitive or radiation-sensitive resin composition (1)>
Next, each component of the actinic ray-sensitive or radiation-sensitive resin composition (1) (also simply referred to as “resin composition (1)”) used in the pattern forming method of the present invention will be described.
The actinic ray-sensitive or radiation-sensitive resin composition (1) is typically a resist composition, and is a negative resist composition (that is, a resist composition for developing an organic solvent). The actinic ray-sensitive or radiation-sensitive resin composition (1) is typically a chemically amplified resist composition.

[1] Resin whose polarity is increased by the action of an acid and its solubility in a developer containing an organic solvent is reduced As a resin whose polarity is increased by the action of an acid and its solubility in a developer containing an organic solvent is reduced, for example, Resin (hereinafter referred to as “acid-decomposable group”) having a group (hereinafter also referred to as “acid-decomposable group”) that decomposes by the action of an acid on the main chain or side chain of the resin, or both of the main chain and the side chain Acid-decomposable resin "or" resin (A) ").
The acid-decomposable group preferably has a structure protected by a group capable of decomposing and leaving a polar group by the action of an acid. Preferable polar groups include a carboxyl group, a phenolic hydroxyl group, an alcoholic hydroxyl group (alcoholic means that it does not show acidity like a so-called phenolic hydroxyl group), and a sulfonic acid group.

A preferable group as the acid-decomposable group is a group in which the hydrogen atom of these groups is substituted with a group capable of leaving with an acid.
Examples of the group leaving with an acid include —C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —C (R ₃₆ ) (R ₃₇ ) (OR ₃₉ ), —C (R ₀₁ ) (R ₀₂ ). ) (OR ₃₉ ) and the like.
In the formula, each of R ₃₆ to R ₃₉ independently represents an alkyl group, a cycloalkyl group (monocyclic or polycyclic), an aryl group, an aralkyl group, or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.
R ₀₁ and R ₀₂ each independently represents a hydrogen atom, an alkyl group (monocyclic or polycyclic), a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group.

The acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group. Further, when the pattern forming method of the present invention is performed by exposure with KrF light or EUV light, or electron beam irradiation, it is also preferable to use an acid-decomposable group in which a phenolic hydroxyl group is protected with an acid leaving group.

The resin (A) preferably has a repeating unit having an acid-decomposable group.
Examples of this repeating unit include the following.

In general formulas (aI) and (aI ′)
Xa ₁ represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom.
T represents a single bond or a divalent linking group.
Rx ₁ to Rx ₃ each independently represents an alkyl group or a cycloalkyl group. Two of Rx ₁ to Rx ₃ may combine to form a ring structure. The ring structure may contain a hetero atom such as an oxygen atom in the ring.
Examples of the divalent linking group for T include an alkylene group, —COO—Rt— group, —O—Rt— group, phenylene group and the like. In the formula, Rt represents an alkylene group or a cycloalkylene group.

T in the general formula (aI) is preferably a single bond or a —COO—Rt— group, more preferably a —COO—Rt— group, from the viewpoint of insolubilization of the resist in an organic solvent developer. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a —CH ₂ — group, — (CH ₂ ) ₂ — group, or — (CH ₂ ) ₃ — group.
T in the general formula (aI ′) is preferably a single bond.

The alkyl group of _Xa1 may have a substituent, and examples of the substituent include a hydroxyl group and a halogen atom (preferably a fluorine atom).
The alkyl group for X _a1 is preferably an alkyl group having 1 to 4 carbon atoms, and is preferably a methyl group.
X _a1 is preferably a hydrogen atom or a methyl group.
The alkyl group for Rx ₁ , Rx ₂ and Rx ₃ may be linear or branched.
Examples of the cycloalkyl group of Rx ₁ , Rx ₂ and Rx ₃ include polycyclic rings such as a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group and an adamantyl group. Are preferred.
The ring structure formed by combining two of Rx ₁ , Rx ₂ and Rx ₃ includes a monocyclic cycloalkane ring such as a cyclopentyl ring and a cyclohexyl ring; a norbornane ring, a tetracyclodecane ring, a tetracyclododecane ring, an adamantane ring A polycyclic cycloalkyl group such as is preferable. A monocyclic cycloalkane ring having 5 or 6 carbon atoms is particularly preferable.
Rx ₁ , Rx ₂ and Rx ₃ are preferably each independently an alkyl group, more preferably a linear or branched alkyl group having 1 to 4 carbon atoms.

Each of the above groups may have a substituent, and examples of the substituent include an alkyl group (1 to 4 carbon atoms), a cycloalkyl group (3 to 8 carbon atoms), a halogen atom, an alkoxy group (carbon 1 to 4), a carboxyl group, an alkoxycarbonyl group (2 to 6 carbon atoms), and the like, and 8 or less carbon atoms are preferable. Among these, from the viewpoint of further improving the dissolution contrast with respect to a developer containing an organic solvent before and after acid decomposition, a substituent having no hetero atom such as an oxygen atom, a nitrogen atom, or a sulfur atom is more preferable ( For example, it is more preferable that it is not an alkyl group substituted with a hydroxyl group, etc.), a group consisting of only a hydrogen atom and a carbon atom is more preferable, and a linear or branched alkyl group or a cycloalkyl group is particularly preferable. preferable.

Although the specific example of the repeating unit which has an acid-decomposable group is given, it is not limited to these.
In specific examples, Rx represents a hydrogen atom, CH ₃ , CF ₃ , or CH ₂ OH. Rxa and Rxb each represents an alkyl group having 1 to 4 carbon atoms. Xa ₁ represents a hydrogen atom, CH ₃ , CF ₃ , or CH ₂ OH. Z represents a substituent, and when a plurality of Zs are present, the plurality of Zs may be the same as or different from each other. p represents 0 or a positive integer. Specific examples and preferred examples of Z are the same as specific examples and preferred examples of the substituent that each group such as Rx ₁ to Rx ₃ may have.

In the specific examples below, Xa represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom.

The following specific examples are repeating units having a structure in which an alcoholic hydroxyl group is protected with a group that decomposes and leaves under the action of an acid. In specific examples, Xa ₁ represents a hydrogen atom, CH ₃ , CF ₃ , or CH ₂ OH.

One type of repeating unit having an acid-decomposable group may be used, or two or more types may be used in combination. When two types are used in combination, the combination is not particularly limited. For example, (1) a repeating unit that decomposes by the action of an acid to generate a carboxyl group and a repeating unit that decomposes by the action of an acid to generate an alcoholic hydroxyl group (2) A combination of a repeating unit that decomposes by the action of an acid to generate a carboxyl group and a repeating unit that decomposes by the action of an acid to generate a phenolic hydroxyl group, (3) Decomposed by the action of an acid Thus, a combination of two types of repeating units that generate a carboxyl group (having different structures) can be considered. Among these, the preferable combination in the case of (3) is illustrated for reference.

The content of the repeating unit having an acid-decomposable group contained in the resin (A) (the total when there are a plurality of repeating units having an acid-decomposable group) is not particularly limited. The lower limit of the unit is preferably 15 mol% or more, more preferably 20 mol% or more, further preferably 25 mol% or more, and particularly preferably 40 mol% or more. . Moreover, as an upper limit, it is preferable that it is 90 mol% or less, It is more preferable that it is 75 mol% or less, It is more preferable that it is 65 mol% or less.

The resin (A) may contain a repeating unit having a lactone structure or a sultone structure.
Specific examples of the repeating unit having a group having a lactone structure or a sultone structure are shown below, but the present invention is not limited thereto.

It is also possible to use a repeating unit having two or more lactone structures or sultone structures in combination.

When the resin (A) contains a repeating unit having a lactone structure or a sultone structure, the content of the repeating unit having a lactone structure or a sultone structure is 5 to 60 mol% with respect to all the repeating units in the resin (A). It is preferably 5 to 55 mol%, more preferably 10 to 50 mol%.

Moreover, the resin (A) may have a repeating unit having a cyclic carbonate structure. Specific examples are given below, but the present invention is not limited thereto.
In the following specific examples, R _A ¹ represents a hydrogen atom or an alkyl group (preferably a methyl group).

When the resin (A) contains a repeating unit having a cyclic carbonate structure, the content of the repeating unit having a cyclic carbonate structure is preferably 5 to 60 mol% with respect to all the repeating units in the resin (A). More preferably, it is 5 to 55 mol%, still more preferably 10 to 50 mol%.

The resin (A) may have a repeating unit having a hydroxyl group or a cyano group.
Specific examples of the repeating unit having a hydroxyl group or a cyano group are given below, but the present invention is not limited thereto.

When the resin (A) contains a repeating unit having a hydroxyl group or a cyano group, the content of the repeating unit having a hydroxyl group or a cyano group is preferably from 3 to 25 mol% based on all repeating units in the resin (A). More preferably, it is 5 to 15 mol%.

Resin (A) may have a repeating unit having an acid group.
The resin (A) may or may not contain a repeating unit having an acid group, but when it is contained, the content of the repeating unit having an acid group is relative to all the repeating units in the resin (A). It is preferably 25 mol% or less, and more preferably 20 mol% or less. When resin (A) contains the repeating unit which has an acid group, content of the repeating unit which has an acid group in resin (A) is 1 mol% or more normally.

Specific examples of the repeating unit having an acid group are shown below, but the present invention is not limited thereto.
In specific examples, Rx represents H, CH ₃ , CH ₂ OH, or CF ₃ .

The resin (A) further has a repeating unit that has an alicyclic hydrocarbon structure and / or an aromatic ring structure that does not have a polar group (for example, the acid group, hydroxyl group, cyano group) and does not exhibit acid decomposability. be able to.
The content of this repeating unit is preferably 1 to 50 mol%, more preferably 5 to 50 mol%, still more preferably 5 to 30 mol%, based on all repeating units in the resin (A).
Specific examples of the repeating unit having an alicyclic hydrocarbon structure having no polar group and not exhibiting acid decomposability are shown below, but the present invention is not limited thereto. In the formula, Ra represents H, CH ₃ , CH ₂ OH, or CF ₃ .

The form of the resin (A) in the present invention may be any of random type, block type, comb type, and star type. Resin (A) is compoundable by the radical, cation, or anion polymerization of the unsaturated monomer corresponding to each structure, for example. It is also possible to obtain the desired resin by conducting a polymer reaction after polymerization using an unsaturated monomer corresponding to the precursor of each structure.
When the resin composition (1) is used for ArF exposure, the resin (A) used for the resin composition (1) has substantially no aromatic ring from the viewpoint of transparency to ArF light (specifically Specifically, the ratio of the repeating unit having an aromatic group in the resin is preferably 5 mol% or less, more preferably 3 mol% or less, ideally 0 mol%, that is, no aromatic group. The resin (A) preferably has a monocyclic or polycyclic alicyclic hydrocarbon structure.
When resin composition (1) contains resin (D) mentioned below, it is preferred that resin (A) does not contain a fluorine atom and a silicon atom from a compatible viewpoint with resin (D).

The resin (A) used in the resin composition (1) is preferably a resin in which all of the repeating units are composed of (meth) acrylate-based repeating units. In this case, a resin in which all repeating units are methacrylate-based repeating units, a resin in which all repeating units are acrylate-based repeating units, and a resin in which all repeating units are methacrylate-based repeating units and acrylate-based repeating units However, it is preferable that the acrylate-based repeating unit is 50 mol% or less of the total repeating units.

When the resin composition (1) is irradiated with KrF excimer laser light, electron beam, X-ray, or high-energy light (EUV, etc.) having a wavelength of 50 nm or less, the resin (A) has a repeating unit having an aromatic ring. May be. The repeating unit having an aromatic ring is not particularly limited, and is also exemplified in the above description of each repeating unit, but a styrene unit, a hydroxystyrene unit, a phenyl (meth) acrylate unit, a hydroxyphenyl (meth) acrylate. Examples include units. More specifically, the resin (A) is a resin having a hydroxystyrene-based repeating unit and a hydroxystyrene-based repeating unit protected by an acid-decomposable group, a repeating unit having the aromatic ring, and (meth) Examples thereof include a resin having a repeating unit in which the carboxylic acid moiety of acrylic acid is protected by an acid-decomposable group. In particular, particularly in the case of EUV exposure, since high sensitivity is generally required, the resin (A) preferably contains a repeating unit containing a protective group that easily undergoes acid decomposition. Specific examples of the repeating unit include -C (R ₃₆ ) (R ₃₇ ) (OR ₃₉ ) or -C (R ₀₁ ) (R ₀₂ ) ( A structure represented by OR ₃₉ ) (a structure commonly referred to as an acetal type protecting group) is preferred.

The resin (A) in the present invention can be synthesized and purified according to a conventional method (for example, radical polymerization). For the synthesis method and purification method, see, for example, the descriptions in paragraphs 0201 to 0202 of JP-A-2008-292975.

The weight average molecular weight of the resin (A) in the present invention is generally 1,000 or more, preferably 7,000 to 200,000, more preferably 7,000 to 50, in terms of polystyrene by GPC method. 7,000, still more preferably 7,000 to 40,000,000, particularly preferably 7,000 to 30,000. When the weight average molecular weight is less than 7000, the solubility in an organic developer becomes too high, and there is a concern that a precise pattern cannot be formed.

The dispersity (molecular weight distribution, Mw / Mn) is usually 1.0 to 3.0, preferably 1.0 to 2.6, more preferably 1.0 to 2.0, and particularly preferably 1.4. Resins in the range of ~ 2.0 are used. The smaller the molecular weight distribution, the better the resolution and resist shape, the smoother the sidewall of the resist pattern, and the better the roughness.

In the resin composition (1), the blending ratio of the resin (A) in the whole composition is preferably 30 to 99% by mass, more preferably 60 to 95% by mass in the total solid content.
Resin (A) may be used by 1 type and may be used together.

Hereinafter, specific examples of the resin (A) (the composition ratio of repeating units is a molar ratio) will be given, but the present invention is not limited to these. In addition, below, the aspect in case the structure corresponding to an acid generator (B) mentioned later is carry | supported by resin (A) is also illustrated.

The resin exemplified below is an example of a resin that can be suitably used particularly during EUV exposure or electron beam exposure.

[2] Compound that generates acid upon irradiation with actinic ray or radiation Resin composition (1) is usually a compound that generates acid upon irradiation with actinic ray or radiation (hereinafter referred to as “compound (B)” or “acid generation”. Also referred to as “agent”. The compound (B) that generates an acid upon irradiation with actinic rays or radiation is preferably a compound that generates an organic acid upon irradiation with actinic rays or radiation.
As the acid generator, photo-initiator of photocation polymerization, photo-initiator of photo-radical polymerization, photo-decoloring agent of dyes, photo-discoloring agent, irradiation of actinic ray or radiation used for micro resist, etc. The known compounds that generate an acid and mixtures thereof can be appropriately selected and used.

Examples include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.
Among acid generators, particularly preferred examples are given below.

The acid generator can be synthesized by a known method. For example, <0200> to <0210> of JP2007-161707A, JP2010-1007055A and <2011/02093280 <0051> to <0058>, International Publication No. 2008/153110, <0382> to <0385> and the like.
An acid generator can be used individually by 1 type or in combination of 2 or more types.
The content of the compound that generates an acid upon irradiation with actinic rays or radiation in the composition is preferably 0.1 to 30% by mass, more preferably 0.8%, based on the total solid content of the resin composition (1). It is 5 to 25% by mass, more preferably 3 to 20% by mass, particularly preferably 3 to 15% by mass.

In addition, depending on the actinic ray-sensitive or radiation-sensitive resin composition, there is also an embodiment (B ′) in which a structure corresponding to the acid generator is supported on the resin (A). Specifically, as such an embodiment, a structure described in JP2011-248019A (particularly, a structure described in paragraphs 0164 to 0191, a structure included in the resin described in the example in paragraph 0555). And the repeating unit (R) described in paragraphs 0023 to 0210 of JP2013-80002A, and the contents thereof are incorporated in the present specification. Incidentally, even if the structure corresponding to the acid generator is supported by the resin (A), the actinic ray-sensitive or radiation-sensitive resin composition is additionally added to the resin (A). An unsupported acid generator may be included.
Examples of the embodiment (B ′) include the following repeating units, but are not limited thereto.

[3] Solvent The resin composition (1) usually contains a solvent.
Examples of the solvent that can be used in preparing the resin composition (1) include alkylene glycol monoalkyl ether carboxylates, alkylene glycol monoalkyl ethers, alkyl lactate esters, alkyl alkoxypropionates, and cyclic lactones (preferably Examples thereof include organic solvents such as monoketone compounds having 4 to 10 carbon atoms and optionally having a ring (preferably having 4 to 10 carbon atoms), alkylene carbonate, alkyl alkoxyacetate, and alkyl pyruvate.
Specific examples of these solvents include the solvents described in US Patent Application Publication No. 2008/0187860 <0441> to <0455>.

In the present invention, a plurality of organic solvents may be mixed and used.
For example, you may use the mixed solvent which mixed the solvent which contains a hydroxyl group in a structure, and the solvent which does not contain a hydroxyl group as an organic solvent. As the solvent containing a hydroxyl group and the solvent not containing a hydroxyl group, the above-mentioned exemplary compounds can be selected as appropriate. As the solvent containing a hydroxyl group, alkylene glycol monoalkyl ether, alkyl lactate and the like are preferable, and propylene glycol monomethyl ether ( PGME, also known as 1-methoxy-2-propanol), ethyl lactate is more preferred. Further, as the solvent not containing a hydroxyl group, alkylene glycol monoalkyl ether acetate, alkyl alkoxypropionate, monoketone compound which may contain a ring, cyclic lactone, alkyl acetate and the like are preferable, and among these, propylene glycol monomethyl ether Acetate (PGMEA, also known as 1-methoxy-2-acetoxypropane), ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, butyl acetate are particularly preferred, propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2 -Heptanone is most preferred.
A plurality of solvents that do not contain a hydroxyl group in the structure may be used in combination. Examples of this combination include PGMEA and cyclohexanone, PGMEA and cyclopentanone, PGMEA and γ-butyrolactone, PGMEA and 2-heptanone, and the like.
For example, when two kinds of solvents are used, the mixing ratio (mass) is 1/99 to 99/1, preferably 10/90 to 90/10, more preferably 20/80 to 60/40.
The solvent preferably contains propylene glycol monomethyl ether acetate, and is preferably a propylene glycol monomethyl ether acetate single solvent or a mixed solvent of two or more containing propylene glycol monomethyl ether acetate.
When a suitable amount of a solvent having a relatively high boiling point such as γ-butyrolactone is used, it can be expected that the hydrophobic resin (D) described later is more unevenly distributed on the surface and the performance for immersion exposure is improved.
Furthermore, you may use 3 or more types of solvents. As a result, fine adjustment of resist shape, adjustment of viscosity, and the like may be performed. Examples of the combinations include PGMEA · PGME · γ-butyrolactone, PGMEA · PGME · cyclohexanone, PGMEA · PGME · 2-heptanone, PGMEA · cyclohexanone · γ-butyrolactone, PGMEA · γ-butyrolactone · 2-heptanone, and the like.

[4] Hydrophobic resin (D)
The resin composition (1) may contain a hydrophobic resin (hereinafter also referred to as “hydrophobic resin (D)” or simply “resin (D)”), particularly when applied to immersion exposure. The hydrophobic resin (D) is preferably different from the resin (A).
As a result, the hydrophobic resin (D) is unevenly distributed in the film surface layer, and when the immersion medium is water, the static / dynamic contact angle of the resist film surface with water is improved, and the immersion liquid followability is improved. be able to.
Even when the resin composition (1) is not applied to immersion exposure, the resin composition (1) may contain a hydrophobic resin for various purposes. For example, when the resin composition (1) is applied to EUV exposure, it is also preferable to use a hydrophobic resin in anticipation of outgas suppression and pattern shape adjustment.
The hydrophobic resin (D) is preferably designed to be unevenly distributed at the interface as described above. However, unlike the surfactant, it is not always necessary to have a hydrophilic group in the molecule. Does not have to contribute to uniform mixing.

The hydrophobic resin (D) is selected from any one of “fluorine atom”, “silicon atom”, and “CH ₃ partial structure contained in the side chain portion of the resin” from the viewpoint of uneven distribution in the film surface layer. It is preferable to have the above, and it is more preferable to have two or more.

The weight average molecular weight in terms of standard polystyrene of the hydrophobic resin (D) is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, still more preferably 2,000 to 15,000. is there.
In addition, the hydrophobic resin (D) may be used alone or in combination.
The content of the hydrophobic resin (D) in the resin composition (1) is preferably 0.01 to 10% by mass, preferably 0.05 to 8% by mass, based on the total solid content in the resin composition (1). Is more preferable, and 0.1 to 7% by mass is even more preferable.

The hydrophobic resin (D), like the resin (A), naturally has few impurities such as metals, and the residual monomer or oligomer component is preferably 0.01 to 5% by mass, more preferably Is more preferably 0.01 to 3% by mass and 0.05 to 1% by mass. Thereby, the resin composition (1) which does not change over time, such as a foreign substance in liquid and sensitivity, is obtained. In view of resolution, resist shape, resist pattern side wall, roughness, etc., the molecular weight distribution is preferably in the range of 1 to 5, more preferably 1 to 3, and still more preferably 1 to 2.

As the hydrophobic resin (D), various commercially available products can be used, and the hydrophobic resin (D) can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable.
The reaction solvent, the polymerization initiator, the reaction conditions (temperature, concentration, etc.) and the purification method after the reaction are the same as those described for the resin (A), but in the synthesis of the hydrophobic resin (D), The concentration of the reaction is preferably 30 to 50% by mass. For more details, refer to the description in the vicinity of paragraphs 0320 to 0329 in JP-A-2008-292975.

Specific examples of the hydrophobic resin (D) are shown below. The following table shows the molar ratio of repeating units in each resin (corresponding to each repeating unit in order from the left), weight average molecular weight, and degree of dispersion.

[5] Basic compound The resin composition (1) preferably contains a basic compound.

(1) In one form, the resin composition (1) has a basic compound or an ammonium salt compound (hereinafter, referred to as “compound (N)”) whose basicity is reduced by irradiation with actinic rays or radiation. It is preferable to contain.
The compound (N) is preferably a compound (N-1) having a basic functional group or an ammonium group and a group capable of generating an acidic functional group upon irradiation with actinic rays or radiation. That is, the compound (N) is a basic compound having a basic functional group and a group capable of generating an acidic functional group upon irradiation with actinic light or radiation, or an acidic functional group upon irradiation with an ammonium group and active light or radiation. An ammonium salt compound having a group to be generated is preferable.
Specific examples of the compound (N) include the following compounds. In addition to the compounds listed below, examples of the compound (N) include the compounds (A-1) to (A-44) described in US Patent Application Publication No. 2010/0233629, and US patent applications. The compounds (A-1) to (A-23) described in JP 2012/0156617 A can also be preferably used in the present invention.

These compounds can be synthesized according to the synthesis examples described in JP-A-2006-330098.
The molecular weight of the compound (N) is preferably 500 to 1,000.
The resin composition (1) may or may not contain the compound (N), but when it is contained, the content of the compound (N) is based on the solid content of the resin composition (1). The content is preferably 0.1 to 20% by mass, more preferably 0.1 to 10% by mass.

(2) In another embodiment, the resin composition (1) is a basic compound (N) different from the compound (N) as a basic compound in order to reduce a change in performance over time from exposure to heating. ') May be included.
Preferred examples of the basic compound (N ′) include compounds having structures represented by the following formulas (A ′) to (E ′).

In general formula (A ′), RA ²⁰⁰ , RA ²⁰¹ and RA ²⁰² may be the same or different, and are a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group (having 6 to 20 carbon atoms), wherein RA ²⁰¹ and RA ²⁰² may be bonded to each other to form a ring. In the general formula (E ′), RA ²⁰³ , RA ²⁰⁴ , RA ²⁰⁵ and RA ²⁰⁶ may be the same or different and each represents an alkyl group (preferably having 1 to 20 carbon atoms).
The alkyl group in the general formulas (A ′) and (E ′) may have a substituent. Examples of the alkyl group having a substituent include an aminoalkyl group having 1 to 20 carbon atoms, A 20 hydroxyalkyl group or a cyanoalkyl group having 1 to 20 carbon atoms is preferred.
The alkyl groups in the general formulas (A ′) and (E ′) are more preferably unsubstituted.
Specific examples of the basic compound (N ′) include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine, and more preferable specific examples include an imidazole structure. , Diazabicyclo structure, onium hydroxide structure, onium carboxylate structure, trialkylamine structure, aniline structure or pyridine structure compound, alkylamine derivative having hydroxyl group and / or ether bond, aniline derivative having hydroxyl group and / or ether bond Etc.

Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and the like. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, 1,8-diazabicyclo [5,4, 0] Undecaker 7-ene and the like. Examples of the compound having an onium hydroxide structure include triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris (t-butylphenyl) Examples include sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide, and the like. The compound having an onium carboxylate structure is a compound in which the anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate. Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine. Examples of the compound having an aniline structure include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutylaniline, N, N-dihexylaniline and the like. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, and tris (methoxyethoxyethyl) amine. Examples of aniline derivatives having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline.
Preferred examples of the basic compound further include an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group, and an ammonium salt compound having a sulfonic acid ester group. Specific examples thereof include, but are not limited to, compounds (C1-1) to (C3-3) exemplified in <0066> of US Patent Application Publication No. 2007/0224539. Absent.

(3) In another form, the resin composition (1) may contain a nitrogen-containing organic compound having a group capable of leaving by the action of an acid as one kind of the basic compound (N ′). As an example of this compound, for example, specific examples of the compound are shown below.

The above compound can be synthesized, for example, according to the method described in JP-A-2009-199021.
As the basic compound (N ′), a compound having an amine oxide structure can also be used. Specific examples of this compound include triethylamine pyridine N-oxide, tributylamine N-oxide, triethanolamine N-oxide, tris (methoxyethyl) amine N-oxide, tris (2- (methoxymethoxy) ethyl) amine = oxide. 2,2 ′, 2 ″ -nitrilotriethylpropionate N-oxide, N-2- (2-methoxyethoxy) methoxyethylmorpholine N-oxide, and other amine oxide compounds exemplified in JP-A-2008-102383 are used. Is possible.

The molecular weight of the basic compound (N ′) is preferably 250 to 2000, more preferably 400 to 1000. From the viewpoint of further reduction in LWR and uniformity of local pattern dimensions, the molecular weight of the basic compound is preferably 400 or more, more preferably 500 or more, and even more preferably 600 or more. .
These basic compounds (N ′) may be used in combination with the compound (N), or may be used alone or in combination of two or more.
The resin composition (1) in the present invention may or may not contain the basic compound (N ′), but when it is contained, the amount of the basic compound (N ′) used is the resin composition (1). ) Is usually 0.001 to 10% by mass, preferably 0.01 to 5% by mass.

(4) In another form, the resin composition (1) may contain an onium salt represented by the following general formula (6A) or (6B) as a basic compound. This onium salt is expected to control the diffusion of the generated acid in the resist system in relation to the acid strength of the photoacid generator usually used in the resist composition.

In general formula (6A),
Ra represents an organic group. However, those in which a fluorine atom is substituted for a carbon atom directly bonded to a carboxylic acid group in the formula are excluded.
X ⁺ represents an onium cation.
In general formula (6B),
Rb represents an organic group. However, those in which a fluorine atom is substituted for a carbon atom directly bonded to the sulfonic acid group in the formula are excluded.
X ⁺ represents an onium cation.

In the organic group represented by Ra and Rb, the atom directly bonded to the carboxylic acid group or sulfonic acid group in the formula is preferably a carbon atom. However, in this case, in order to make the acid relatively weaker than the acid generated from the above-mentioned photoacid generator, the fluorine atom does not substitute for the carbon atom directly bonded to the sulfonic acid group or carboxylic acid group.
Examples of the organic group represented by Ra and Rb include an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 30 carbon atoms. Alternatively, a heterocyclic group having 3 to 30 carbon atoms can be used. In these groups, some or all of the hydrogen atoms may be substituted.

Examples of the substituent that the alkyl group, cycloalkyl group, aryl group, aralkyl group and heterocyclic group may have include a hydroxyl group, a halogen atom, an alkoxy group, a lactone group, and an alkylcarbonyl group.

Examples of the onium cation represented by X ⁺ in the general formulas (6A) and (6B) include a sulfonium cation, an ammonium cation, an iodonium cation, a phosphonium cation, and a diazonium cation. Among these, a sulfonium cation is more preferable.
As the sulfonium cation, for example, an arylsulfonium cation having at least one aryl group is preferable, and a triarylsulfonium cation is more preferable. The aryl group may have a substituent, and the aryl group is preferably a phenyl group.
As an example of a sulfonium cation and an iodonium cation, the structure demonstrated in the compound (B) can also be mentioned preferably.
A specific structure of the onium salt represented by the general formula (6A) or (6B) is shown below.

(5) In another form, the resin composition (1) is a compound included in the formula (I) of JP2012-189977A, and the formula (I) of JP2013-6827A as a basic compound. In a molecule such as a compound represented by formula (I) in JP2013-8020A, a compound represented by formula (I) in JP2012-252124A, and the like. A compound having both an onium salt structure and an acid anion structure (hereinafter also referred to as a betaine compound) may also be contained. Examples of the onium salt structure include a sulfonium, iodonium, and ammonium structure, and a sulfonium or iodonium salt structure is preferable. The acid anion structure is preferably a sulfonate anion or a carboxylic acid anion. Examples of this compound include the following.

[6] Surfactant The resin composition (1) may further contain a surfactant. When the resin composition (1) contains a surfactant, fluorine and / or silicon surfactant (fluorine surfactant, silicon surfactant, surfactant having both fluorine atom and silicon atom) It is more preferable to contain any one of these or 2 or more types.
When the resin composition (1) contains a surfactant, it is possible to provide a resist pattern with less adhesion and development defects with good sensitivity and resolution when using an exposure light source of 250 nm or less, particularly 220 nm or less. It becomes.

Examples of the fluorine-based and / or silicon-based surfactant include surfactants described in <0276> of US Patent Application Publication No. 2008/0248425, such as Fluorard FC430, 431, 4430 (Sumitomo 3M Co., Ltd.). ), Megafuck Series (manufactured by DIC Corporation), Surflon S-382, SC101, 102, 103, 104, 105, 106, KH-20 (manufactured by Asahi Glass Co., Ltd.), Troisol S-366 (Troy Chemical ( GF-300, GF-150 (manufactured by Toagosei Chemical Co., Ltd.), Surflon S-393 (manufactured by Seimi Chemical Co., Ltd.), EFtop EF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF351 , EF352, EF801, EF802, EF601 (Co., Ltd.) Made mucopolysaccharides), PF636, PF656, PF6320, PF6520, and the like (manufactured by OMNOVA Inc.), FTX-204G, 208G, 218G, 230G, 204D, 208D, 212D, 218D, 222D ((Ltd.) Neos). Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

Further, as the surfactant, in addition to the known surfactants as described above, fluoroaliphatic produced by a telomerization method (also referred to as telomer method) or an oligomerization method (also referred to as oligomer method). A surfactant using a polymer having a fluoroaliphatic group derived from a compound can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.
As surfactants corresponding to the above, Megafac F178, F-470, F-473, F-475, F-476, F-472 (manufactured by DIC Corporation), acrylates having C ₆ F ₁₃ groups (or methacrylate) and (poly (oxyalkylene)) acrylate (copolymer of or methacrylate), and acrylate having a C ₃ F ₇ group (or methacrylate) (poly (oxyethylene) and) acrylate (or methacrylate) (poly ( And a copolymer with oxypropylene)) acrylate (or methacrylate).

In the present invention, surfactants other than the fluorine-based and / or silicon-based surfactants described in <0280> of US Patent Application Publication No. 2008/0248425 can also be used.

These surfactants may be used alone or in some combination.

When the resin composition (1) contains a surfactant, the amount of the surfactant used is preferably 0.0001 to 2% by mass based on the total amount of the resin composition (1) (excluding the solvent), More preferably, it is 0.0005 to 1% by mass.
On the other hand, by making the addition amount of the surfactant 10 ppm or less with respect to the total amount of the resin composition (1) (excluding the solvent), the surface unevenness of the hydrophobic resin is increased. Can be made more hydrophobic, and the water followability during immersion exposure can be improved.

[7] Other additives (G)
The resin composition (1) may contain a carboxylic acid onium salt. Examples of such carboxylic acid onium salts include carboxylic acid onium salts described in US Patent Application Publication No. 2008/0187860 <0605> to <0606>.
When the resin composition (1) contains a carboxylic acid onium salt, the content is generally 0.1 to 20% by mass, preferably 0.8%, based on the total solid content of the resin composition (1). 5 to 10% by mass, more preferably 1 to 7% by mass.

Moreover, the resin composition (1) may contain a so-called acid proliferating agent as necessary. The acid proliferating agent is particularly preferably used when performing the pattern forming method of the present invention by EUV exposure or electron beam irradiation. Although it does not specifically limit as a specific example of an acid multiplication agent, For example, the following is mentioned.

If necessary, the resin composition (1) may further include a dye, a plasticizer, a photosensitizer, a light absorber, an alkali-soluble resin, a dissolution inhibitor, and a compound that promotes solubility in a developer (for example, a molecular weight of 1000 The following phenol compounds, alicyclic or aliphatic compounds having a carboxyl group, and the like can be contained.

<Actinic ray-sensitive or radiation-sensitive resin composition (2)>
Next, the actinic ray-sensitive or radiation-sensitive resin composition (2) (also simply referred to as “resin composition (2)”) used in the pattern forming method of the present invention will be described.
The resin composition (2) contains a resin whose polarity increases by the action of an acid and whose solubility in a developer containing an organic solvent decreases.
Examples of such a resin include the same resins as those described in the resin composition (1) whose resin increases in polarity by the action of the acid and decreases in solubility in a developer containing an organic solvent. The preferable range of the resin content relative to the total amount of the product (1) is also the same as the range described in the resin composition (1).
In addition, the resin composition (2) can similarly contain the above-described components that the resin composition (1) can contain, and the preferred range of the content of each component relative to the total amount of the resin composition (2). Is the same as the range described in the resin composition (1).

The film thicknesses of the resin compositions (1) and (2) are each preferably 30 to 250 nm, more preferably 30 to 200 nm, respectively, from the viewpoint of improving the resolution.

The solid content concentration of the resin compositions (1) and (2) is usually 1.0 to 10% by mass, preferably 2.0 to 5.7% by mass, more preferably 2.0 to 5.3%. % By mass. By setting the solid content concentration within the above range, the resist solution can be uniformly applied on the substrate.
The solid content concentration is a weight percentage of the weight of the other resist components excluding the solvent with respect to the total mass of the resin composition (1) or (2).

Resin compositions (1) and (2) are used by dissolving the above components in a predetermined organic solvent, preferably the above mixed solvent, filtering the solution, and applying the solution on a predetermined support (substrate). The pore size of the filter used for filter filtration is preferably 0.1 μm or less, more preferably 0.05 μm or less, and still more preferably 0.03 μm or less made of polytetrafluoroethylene, polyethylene, or nylon. In filter filtration, for example, as in JP-A-2002-62667, circulation filtration may be performed, or filtration may be performed by connecting a plurality of types of filters in series or in parallel. Moreover, you may filter resin composition (1) and (2) in multiple times. Furthermore, you may perform a deaeration process etc. with respect to resin composition (1) and (2) before and after filter filtration.

The resin composition (1) and the resin composition (2) may be the same as or different from each other.
It should be noted that the intermix between the two is less likely to be a problem when, for example, the first negative pattern is formed in the step (i-3) and then the heat curing (heating) is performed as in the heating step (ii). It can be considered, but this does not preclude resist design in consideration of intermix problems.
In order to suppress the intermix, for example, as a solvent contained in the resin composition (2), a solvent that dissolves the resin of the resin composition (2) but does not dissolve the resin of the resin composition (1). It is possible to choose. For such a design, for example, the solvent contained in the resin composition (2) includes the solvents mentioned above as the rinse liquid containing an organic solvent. Preferable examples can be given.

Hereinafter, the present invention will be specifically described with reference to examples. However, the present invention is not limited to the following examples.

<Preparation of actinic ray-sensitive or radiation-sensitive resin composition>
The components shown in Table 4 were dissolved in a total solid content of 3.8% by mass with the solvents shown in the same table, and each was filtered through a polyethylene filter having a pore size of 0.1 μm to obtain an actinic ray-sensitive or radiation-sensitive resin composition. The products Ar-01 to 33 were prepared.

<Resin (A)>
The resins in Table 4 are as shown in Tables 5 and 6 below.
The resin was synthesized as follows.
(Synthesis Example (Synthesis of Resin Pol-02))
102.3 parts by mass of cyclohexanone was heated to 80 ° C. under a nitrogen stream. While stirring this liquid, there were 22.2 parts by mass of a monomer represented by the following structural formula Unit-1, 22.8 parts by mass of a monomer represented by the following structural formula Unit-2, and the following structural formula Unit-3. A mixed solution of 6.6 parts by mass of the monomer, 189.9 parts by mass of cyclohexanone, and 2.40 parts by mass of dimethyl 2,2′-azobisisobutyrate [V-601, manufactured by Wako Pure Chemical Industries, Ltd.] It was added dropwise over time. After completion of dropping, the mixture was further stirred at 80 ° C. for 2 hours. The reaction solution was allowed to cool, then re-precipitated with a large amount of hexane / ethyl acetate (mass ratio 9: 1), filtered, and the obtained solid was vacuum-dried to obtain 41.1 parts by mass of Resin Pol-02. .
The obtained resin Pol-02 had a weight average molecular weight (Mw: polystyrene equivalent) determined from GPC (carrier: tetrahydrofuran (THF)) of Mw = 9500 and a dispersity of Mw / Mn = 1.60. The compositional ratio (molar ratio) of repeating units in Resin Pol-02 measured by ¹³ C-NMR was 40/50/10.
Resin Pol-01 and Resins Pol-03 to 22 were synthesized in the same manner as in the synthesis of Resin Pol-02 except that the monomers used in the synthesis of Resin Pol-02 were changed. Hereinafter, the composition ratio (molar ratio; corresponding in order from the left), weight average molecular weight (Mw), and dispersity (Mw / Mn) of repeating units in the resins Pol-01 to 22 are shown below.

The acid generators in Table 4 are as follows.

<Basic compound (N)>
The basic compounds in Table 4 are as follows.

<Hydrophobic resin (D)>
The additives (hydrophobic resins) in Table 4 are as follows.

<Surfactant>
The surfactants in Table 4 are as follows.
W-1: MegaFuck F176 (Dainippon Ink & Chemicals, Inc .; fluorine-based)
W-2: Megafuck R08 (Dainippon Ink Chemical Co., Ltd .; fluorine and silicon)
W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd .; silicon-based)
W-4: Troisol S-366 (manufactured by Troy Chemical Co., Ltd.)
W-5: KH-20 (Asahi Glass Co., Ltd.)
W-6: PolyFox PF-6320 (manufactured by OMNOVA Solutions Inc .; fluorine system)

<Solvent>
The solvents in Table 4 are as follows.
SL-1: Propylene glycol monomethyl ether acetate (PGMEA)
SL-2: Ethyl lactate SL-3: Propylene glycol monomethyl ether (PGME)
SL-4: cyclohexanone SL-5: γ-butyrolactone SL-6: 4-methyl-2-pentanol

<Examples 1 to 32: Pattern Forming Method>
As described below, a silicon wafer on which an antireflection film is formed is used as a substrate, and a hole pattern (first negative pattern) is formed in a partial region (first region) on the substrate. An attempt was made to form an isolated space pattern (second negative pattern) in a region (second region) different from the region.

(Formation of first film)
First, an antireflection film-forming composition ARC29SR (manufactured by Nissan Chemical Industries, Ltd.) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form an antireflection film having a thickness of 96 nm. On top of that, the resin composition (1) shown in Table 7 below was applied, and first heating (PAB1) was performed at 100 ° C. for 60 seconds to form a first film having a thickness of 100 nm.

(First negative pattern formation)
ArF excimer laser immersion scanner (manufactured by ASML; XT1700i, NA1.20, C-quad20, XY polarization, σout / in 0.981 / 0.895) is used for the first film and a mask (6% halftone hole pattern) Pattern exposure through a pattern pitch of 90 nm and critical dimension of 45 nm). Note that quadrupole illumination was used as the illumination light source shape.
At this time, a mask in which a hole pattern was formed only in a portion corresponding to the first region and a light shielding portion was used in the other portion so that only the first region was subjected to pattern exposure.
Next, after performing 2nd heating (PEB1) at 100 degreeC for 60 second, organic solvent image development was implemented using butyl acetate, and the 1st negative pattern was obtained.

(Heating of the first negative pattern)
The first negative pattern obtained as described above was subjected to third heating (Post Bake 1) at 200 ° C. for 60 seconds.

(Formation of second film)
On the substrate on which the first negative pattern was formed, the resin composition (2) shown in Table 7 below was applied, and the fourth heating (PAB2) was performed for 60 seconds at 100 ° C. A second film was formed.

(Second negative pattern formation)
ArF excimer laser immersion scanner (manufactured by ASML; XT1700i, NA0.75, Annual XY polarization, σout / in 0.97 / 0.740) is used for the second film, and a mask (6% halftone isolated trench pattern, Critical (Dimension: 100 nm).
At this time, an isolated trench pattern was formed only in a portion corresponding to the second region so that only the second region was subjected to pattern exposure, and a mask having a light shielding portion in other portions was used. In addition, normal illumination was used as the illumination light source shape.
Subsequently, after performing 5th heating (PEB2) over 60 second at 100 degreeC, the organic solvent image development was implemented using butyl acetate, and the 2nd negative pattern was obtained.
The second negative pattern obtained as described above was subjected to sixth heating (Post Bake 2) at 100 ° C. for 60 seconds.

About each Example, after forming and heating the 2nd negative pattern, it observed using the scanning electron microscope (Hitachi S9380). As a result of observation, in any of the examples, a resist pattern in which a hole pattern (first negative pattern) and an isolated space pattern (second negative pattern) are laid out in different regions is formed. Clearly confirmed.

Although the embodiments have been described above, the present invention is not limited to these embodiments. For example, patterns can be formed in the following modes.
A mode in which negative development is performed by adding about 1% by mass of a nitrogen-containing basic compound, such as trioctylamine, to the developer containing an organic solvent in each example. In each example, an ArF excimer laser is used. As an embodiment in which the exposure is replaced with EUV exposure, and as the resin in the actinic ray-sensitive or radiation-sensitive resin composition, the above-mentioned “especially resins that can be suitably used in EUV exposure or electron beam exposure” Etc.] using the resin (resin containing an aromatic group) introduced as “

10: substrate 50: first film 51: first negative pattern 60: second film 61: second negative pattern 71: third negative pattern A1: first region A2: second Region A3: Third region M1: Mask M2: Mask

Claims

A pattern forming method for forming a pattern in which two or more different patterns are laid out in different regions,
(I) The following step (i-1), the following step (i-2) and the following step (i-3) are performed in this order to form a first negative pattern in the first region on the substrate. Process,
(I-1) An actinic ray-sensitive or radiation-sensitive resin composition (1) containing a resin that increases polarity by the action of an acid and decreases solubility in a developer containing an organic solvent on the substrate. (I-2) a step of exposing the first film using a region other than the first region as a non-exposed portion. (I-3) the exposed first film. Are developed using a developer containing an organic solvent to form the first negative pattern in the first region, and (iii) the following step (iii-1) and the following step (iii-2) And the following step (iii-3) is performed in this order to form a second negative pattern different from the first negative pattern in the second region different from the first region on the substrate. The process of
(Iii-1) An actinic ray-sensitive or radiation-sensitive resin composition (2) containing a resin having an increased polarity by the action of an acid and reduced solubility in a developer containing an organic solvent on the substrate. (Iii-2) exposing the second film to a region other than the second region as a non-exposed portion (iii-3) exposing the second film Is developed using a developer containing an organic solvent, and the second negative pattern is formed in the second region.
The pattern formation method according to claim 1, further comprising a heating step (ii) between the step (i) and the step (iii).
The pattern forming method according to claim 1 or 2, wherein the actinic ray sensitive or radiation sensitive resin composition (1) is different from the actinic ray sensitive or radiation sensitive resin composition (2).
The pattern forming method according to claim 1 or 2, wherein the actinic ray sensitive or radiation sensitive resin composition (1) and the actinic ray sensitive or radiation sensitive resin composition (2) are the same.
An etching method in which an etching process is performed on the substrate using the pattern formed by the pattern forming method according to claim 1 as a mask.
An electronic device manufacturing method including the pattern forming method according to any one of claims 1 to 4.
An electronic device manufactured by the electronic device manufacturing method according to claim 6.