WO2015115239A1 - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
WO2015115239A1
WO2015115239A1 PCT/JP2015/051310 JP2015051310W WO2015115239A1 WO 2015115239 A1 WO2015115239 A1 WO 2015115239A1 JP 2015051310 W JP2015051310 W JP 2015051310W WO 2015115239 A1 WO2015115239 A1 WO 2015115239A1
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WO
WIPO (PCT)
Prior art keywords
substrate
support
weight
central axis
chamber
Prior art date
Application number
PCT/JP2015/051310
Other languages
French (fr)
Japanese (ja)
Inventor
幸嗣 安藤
Original Assignee
株式会社Screenホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2014013210A external-priority patent/JP6211424B2/en
Priority claimed from JP2014013209A external-priority patent/JP6208028B2/en
Application filed by 株式会社Screenホールディングス filed Critical 株式会社Screenホールディングス
Publication of WO2015115239A1 publication Critical patent/WO2015115239A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing apparatus.
  • substrate In the process of manufacturing a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate using a substrate processing apparatus. For example, by supplying a chemical solution to a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. In addition, after the etching process is completed, a process of removing the resist on the substrate or cleaning the substrate is also performed.
  • the substrate In a single-wafer type substrate processing apparatus that processes substrates one by one, the substrate is held by the substrate holder, and the processing liquid is supplied to the substrate while rotating the substrate holder.
  • Various methods such as a vacuum chuck, a mechanical chuck, and a magnet chuck, have been put to practical use as methods for holding a substrate in the substrate holder.
  • the substrate is clamped when the upper and lower chamber members are positioned close to each other, and the substrate is released when the upper and lower chamber members are separated.
  • a mechanism is disclosed.
  • Japanese Patent Application Laid-Open No. 2005-19456 discloses a mechanism for holding a substrate or releasing the holding by rotating each of a plurality of holding members arranged around the substrate.
  • the present invention is directed to a substrate processing apparatus for processing a substrate, and aims to hold the substrate while aligning the substrate with respect to the center of rotation.
  • One substrate processing apparatus includes a substrate support portion that supports the substrate from the lower side with an upper surface that is one main surface of the substrate facing upward, and the substrate support portion that is perpendicular to the substrate.
  • a rotation mechanism that rotates about a central axis; an upper surface facing portion that faces at least an outer edge portion of the upper surface; a separation position that separates the upper surface facing portion upward with respect to the substrate supporting portion; and the substrate supporting portion;
  • An opposing portion supporting mechanism that is selectively disposed at a connecting position to be connected; and a chuck portion provided on one of the substrate supporting portion or the upper surface opposing portion, and the chuck portion is viewed along the central axis.
  • At least three claw portions arranged around the substrate and a contact portion pushed by the other of the substrate support portion or the upper surface facing portion when the upper surface facing portion is located at the connection position.
  • the substrate can be held while being aligned with the rotation center.
  • the transmission mechanism includes an elastic member, and when the size of the substrate supported by the substrate support portion varies, the elastic member elastically deforms, whereby the upper surface facing portion at the coupling position and the The distance to the substrate is kept constant.
  • the rotation mechanism is an annular shape centered on the central axis, a rotor portion including a permanent magnet, an annular shape facing the rotor portion and the radial direction centered on the central axis, and the rotor portion; And a stator portion that generates a rotational force about the central axis between the rotor portion and the substrate support portion.
  • the substrate processing apparatus further includes a sealed space forming unit that forms a sealed internal space in which processing on the substrate is performed, the substrate support unit, the rotor unit of the rotating mechanism, The upper surface facing portion and the chuck portion are disposed in the sealed space forming portion.
  • the sealed space forming portion includes a chamber body having an upper opening and a chamber lid portion that closes the upper opening of the chamber body, and the chamber lid portion may be a part of the facing portion support mechanism. And the chamber lid part is located above the chamber body when the chamber lid part is moved up and down relative to the chamber body and the upper surface part is located at the separation position.
  • Another substrate processing apparatus includes a substrate support portion that supports a substrate from below with one main surface facing upward, and the substrate support portion that rotates about a central axis perpendicular to the substrate.
  • a rotating mechanism a first relative position that is relatively different from the substrate support part in the vertical direction, and a weight part that can be arranged at a second relative position above the first relative position; The weight part is disposed at the second relative position by supporting the weight part, and the weight part is rotated together with the substrate and the substrate support part by releasing the support of the weight part.
  • a weight support mechanism positioned at a first relative position; and a chuck portion provided on the substrate support portion or the weight portion, and the chuck portion is disposed around the substrate when viewed along the central axis.
  • At least three claws to be arranged The force due to the weight of the weight portion located at the first relative position is transmitted to the at least three claw portions, so that the edge of the substrate is directed to the central axis at the at least three claw portions.
  • the substrate In the substrate processing apparatus, the substrate can be held while being aligned with the rotation center.
  • the rotating mechanism has an annular shape centered on the central axis, a rotor portion including a permanent magnet, and an annularly opposed annular shape centering on the rotor portion and the central axis, and the rotor portion And a stator part that generates a rotational force about the central axis between the rotor part and the substrate support part.
  • the weight portion is disposed between the substrate support portion and the rotor portion disposed below the substrate support portion, and extends along a guide portion that connects the substrate support portion and the rotor portion.
  • the chuck portion is provided on the substrate support portion.
  • the substrate support portion and the weight portion are annular around the central axis.
  • the position of the weight part when the support by the weight support mechanism is released is closer to the rotor part than the position of the weight part when supported by the weight support mechanism.
  • connection part It is a perspective view which shows a connection part and a some shaft. It is a top view which shows a nail
  • FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to a first embodiment of the present invention.
  • the substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one.
  • substrate 9 substantially disk-shaped semiconductor substrate 9
  • FIG. 1 the application of parallel oblique lines to the cross section of a part of the configuration of the substrate processing apparatus 1 is omitted (the same applies to other cross sectional views).
  • the substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening / closing mechanism 131, a substrate holding unit 14, a substrate rotating mechanism 15, a liquid receiving unit 16, and a cover 17.
  • the cover 17 covers the upper side and the side of the chamber 12.
  • the chamber 12 includes a chamber main body 121 and a chamber lid portion 122.
  • the chamber 12 has a substantially cylindrical shape with a lid and a bottom with a central axis J1 facing in the vertical direction as a center.
  • the chamber main body 121 includes a chamber bottom portion 210 and a chamber side wall portion 214.
  • the chamber bottom portion 210 has a substantially disc-shaped central portion 211, a substantially cylindrical inner wall portion 212 extending downward from the outer edge portion of the central portion 211, and a radially outer side from the lower end of the inner wall portion 212.
  • the chamber side wall 214 has an annular shape centering on the central axis J1.
  • the chamber side wall portion 214 projects upward from the inner edge portion of the base portion 216.
  • a member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as described later.
  • a space surrounded by the chamber side wall part 214, the outer wall part 215, the annular bottom part 213, the inner wall part 212, and the outer edge part of the central part 211 is referred to as a lower annular space 217.
  • the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210.
  • the central portion 211 of the chamber bottom 210 is referred to as a “lower surface facing portion 211”.
  • the chamber lid part 122 has a substantially disc shape perpendicular to the central axis J1 and includes the upper part of the chamber 12.
  • the chamber lid 122 closes the upper opening of the chamber body 121.
  • FIG. 1 shows a state where the chamber lid 122 is separated from the chamber main body 121.
  • the outer edge of the chamber lid 122 contacts the upper portion of the chamber side wall 214.
  • the chamber opening / closing mechanism 131 moves the chamber lid 122, which is a movable part of the chamber 12, relative to the chamber body 121, which is another part of the chamber 12, in the vertical direction.
  • the chamber opening / closing mechanism 131 is a lid raising / lowering mechanism that raises / lowers the chamber lid 122.
  • the top plate 123 also moves in the vertical direction together with the chamber lid 122.
  • the chamber lid 122 is in contact with the chamber main body 121 to close the upper opening, and the chamber lid 122 is pressed toward the chamber main body 121, whereby the chamber space 120 which is an internal space sealed in the chamber 12. (See FIG. 7) is formed.
  • the chamber space 120 is sealed by closing the upper opening of the chamber body 121 by the chamber lid 122.
  • the chamber lid part 122 and the chamber body 121 are sealed space forming parts that form the chamber space 120.
  • the substrate holding unit 14 is disposed in the chamber space 120 and holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding unit 14 in a state where one main surface 91 (hereinafter referred to as “upper surface 91”) on which a fine pattern is formed faces upwards perpendicularly to the central axis J1.
  • the substrate holding unit 14 includes the above-described substrate support unit 141 and the chuck unit 4 provided on the substrate support unit 141.
  • the substrate support portion 141 has a substantially annular shape centered on the central axis J1.
  • the substrate support portion 141 includes a substantially annular plate-like support portion base 142 centered on the central axis J ⁇ b> 1 and a plurality of support pins 144 arranged on the support portion base 142 in the circumferential direction.
  • the plurality of support pins 144 support the outer edge portion of the substrate 9 (that is, a portion near the outer periphery including the outer periphery) from below.
  • the chuck portion 4 includes a plurality of claw portions 41.
  • the plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1. Details of the structure of the chuck portion 4 will be described later.
  • the top plate 123 has a substantially disc shape perpendicular to the central axis J1.
  • the top plate 123 is disposed below the chamber lid part 122 and above the substrate support part 141.
  • the top plate 123 has an opening at the center.
  • the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123 perpendicular to the central axis J1. That is, the top plate 123 is an upper surface facing portion that faces the upper surface 91 of the substrate 9.
  • the diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer peripheral edge of the top plate 123 is located on the outer side in the radial direction over the entire periphery of the outer peripheral edge of the substrate 9.
  • a plurality of engaging portions 241 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123.
  • a concave portion that is recessed upward is provided at the lower portion of each engaging portion 241.
  • the top plate 123 is supported so as to be suspended by the chamber lid 122.
  • the chamber lid 122 has a substantially annular plate support 222 at the center.
  • the plate support part 222 includes a substantially cylindrical tube part 223 centered on the central axis J1 and a substantially annular flange part 224 centered on the central axis J1.
  • the flange part 224 spreads radially inward from the lower end of the cylindrical part 223.
  • the top plate 123 includes an annular supported portion 237.
  • the supported portion 237 includes a substantially cylindrical tube portion 238 centered on the central axis J1 and a substantially annular flange portion 239 centered on the central axis J1.
  • the cylinder portion 238 extends upward from the upper surface of the top plate 123.
  • the flange portion 239 extends outward from the upper end of the cylindrical portion 238 in the radial direction.
  • the cylindrical portion 238 is located on the radially inner side of the cylindrical portion 223 of the plate support portion 222.
  • the flange part 239 is located above the flange part 224 of the plate support part 222 and faces the flange part 224 in the vertical direction.
  • the top plate 123 is attached to the chamber lid portion 122 so as to be suspended from the chamber lid portion 122.
  • the plate support part 222 of the chamber cover part 122 supports the top plate 123 in a state where the chamber cover part 122 is spaced upward from the chamber body 121, so that the top plate 123 is supported by the substrate support part 141. On the other hand, they are arranged at positions that are spaced apart upward (hereinafter referred to as “separated positions”).
  • the chamber cover 122 is supported by a chamber opening / closing mechanism 131, and the chamber opening / closing mechanism 131 and the chamber cover 122 substantially support the top plate 123 that is the upper surface facing portion. It is.
  • the substrate rotation mechanism 15 is a so-called hollow motor.
  • the substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152.
  • the rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin.
  • the rotor portion 152 is disposed in the lower annular space 217 in the chamber 12.
  • the support portion base 142 of the substrate support portion 141 is connected to the upper portion of the rotor portion 152 via a connection member.
  • the support portion base 142 is disposed above the rotor portion 152.
  • the stator portion 151 is disposed outside the chamber 12 and around the rotor portion 152, that is, outside in the radial direction with the central axis J1 as the center.
  • the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is positioned below the liquid receiving portion 16.
  • Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.
  • the liquid receiving part 16 includes a cup part 161, a cup part moving mechanism 162, and a cup facing part 163.
  • the cup portion 161 has an annular shape centered on the central axis J ⁇ b> 1, and is located on the entire outer circumference in the radial direction of the chamber 12.
  • the cup part moving mechanism 162 moves the cup part 161 in the vertical direction.
  • the cup part moving mechanism 162 is disposed on the radially outer side of the cup part 161.
  • the cup moving mechanism 162 is arranged at a position different from the chamber opening / closing mechanism 131 in the circumferential direction.
  • the cup facing part 163 is located below the cup part 161 and faces the cup part 161 in the vertical direction.
  • the cup facing portion 163 is a part of a member that forms the chamber side wall portion 214.
  • the cup facing portion 163 has an annular liquid receiving recess 165 positioned on the radially outer side of the chamber side wall portion 214.
  • the cup part 161 includes a side wall part 611, an upper surface part 612, and a bellows 617.
  • the side wall portion 611 has a substantially cylindrical shape centered on the central axis J1.
  • the upper surface portion 612 has a substantially annular plate shape centered on the central axis J1, and extends from the upper end portion of the side wall portion 611 radially inward and radially outward.
  • the lower part of the side wall part 611 is located in the liquid receiving recessed part 165 of the cup facing part 163.
  • the bellows 617 has a substantially cylindrical shape centered on the central axis J1, and can be expanded and contracted in the vertical direction.
  • the bellows 617 is provided over the entire circumference around the side wall 611 outside the side wall 611 in the radial direction.
  • the bellows 617 is formed of a material that does not allow gas or liquid to pass through.
  • the upper end portion of the bellows 617 is connected to the lower surface of the outer edge portion of the upper surface portion 612 over the entire circumference.
  • the upper end portion of the bellows 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612.
  • the connection portion between the bellows 617 and the upper surface portion 612 is sealed, and passage of gas or liquid is prevented.
  • a lower end portion of the bellows 617 is indirectly connected to the chamber body 121 via the cup facing portion 163. Even at the connecting portion between the lower end portion of the bellows 617 and the cup facing portion 163, the passage of gas or liquid is prevented.
  • a substantially columnar upper nozzle 181 centering on the central axis J1 is attached.
  • the upper nozzle 181 is fixed to the chamber lid 122 so as to face the central portion of the upper surface 91 of the substrate 9.
  • the upper nozzle 181 can be inserted into the central opening of the top plate 123.
  • a lower nozzle 182 is attached to the center of the lower surface facing portion 211 of the chamber bottom portion 210.
  • the lower nozzle 182 faces the center of the lower surface 92 of the substrate 9.
  • a plurality of heated gas supply nozzles 180 are further attached to the lower surface facing portion 211.
  • the plurality of heated gas supply nozzles 180 are arranged at, for example, equiangular intervals in the circumferential direction around the central axis J1.
  • FIG. 2 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 provided in the substrate processing apparatus 1.
  • the gas-liquid supply unit 18 includes a chemical solution supply unit 183, a pure water supply unit 184, an IPA supply unit 185, and an inert gas supply unit in addition to the heating gas supply nozzle 180, the upper nozzle 181 and the lower nozzle 182 described above. 186 and a heated gas supply unit 187.
  • the chemical solution supply unit 183, the pure water supply unit 184, and the IPA supply unit 185 are each connected to the upper nozzle 181 through a valve.
  • the lower nozzle 182 is connected to the pure water supply unit 184 via a valve.
  • the upper nozzle 181 is also connected to an inert gas supply unit 186 through a valve.
  • the upper nozzle 181 has a liquid discharge port in the center and a gas jet port around it. Therefore, precisely, a part of the upper nozzle 181 is a part of a broad gas supply part that supplies gas into the chamber 12.
  • the lower nozzle 182 has a liquid discharge port in the center.
  • the plurality of heating gas supply nozzles 180 are connected to the heating gas supply unit 187 via valves.
  • the first discharge path 191 connected to the liquid receiving recess 165 of the liquid receiving unit 16 is connected to the gas-liquid separation unit 193.
  • the gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical solution recovery unit 195, and the drainage unit 196 through valves.
  • the second discharge path 192 connected to the chamber bottom 210 of the chamber 12 is connected to the gas-liquid separator 197.
  • the gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the drainage unit 199 via valves.
  • Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10.
  • the chamber opening / closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 are also controlled by the control unit 10.
  • the chemical solution supplied from the chemical solution supply unit 183 to the substrate 9 via the upper nozzle 181 is an etching solution such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution.
  • the pure water supply unit 184 supplies pure water (DIW: Deionized Water) to the substrate 9 via the upper nozzle 181 or the lower nozzle 182.
  • the IPA supply unit 185 supplies isopropyl alcohol (IPA) onto the substrate 9 through the upper nozzle 181.
  • IPA isopropyl alcohol
  • the inert gas supply unit 186 supplies an inert gas into the chamber 12 via the upper nozzle 181.
  • the heated gas supply unit 187 supplies a heated gas (for example, a high-temperature inert gas heated to 120 to 130 ° C.) to the lower surface 92 of the substrate 9 through the plurality of heated gas supply nozzles 180.
  • the gas used in the inert gas supply unit 186 and the heating gas supply unit 187 is nitrogen (N 2 ) gas, but may be other than nitrogen gas.
  • FIG. 3 is a diagram showing a configuration of a part of the chuck portion 4.
  • the chuck portion 4 is provided on the substrate support portion 141, and a part of the chuck portion 4 is provided inside an annular support portion base 142 centered on the central axis J ⁇ b> 1.
  • a part of the configuration within the support portion base 142 and the contact portion accommodating portion 431 described later is shown in a cross section by a plane including the central axis J1 (the same applies to FIGS. 6 and 9).
  • the chuck portion 4 includes the plurality of claw portions 41 and the transmission mechanism 42 described above. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144.
  • the number of the plurality of claw portions 41 is at least 3, and in each combination of two claw portions 41 adjacent in the circumferential direction among the at least three claw portions 41, the two claw portions 41 and the central axis J1 The angle formed by the line connecting the two is less than 180 degrees.
  • the at least three claw portions 41 are preferably provided at equiangular intervals in the circumferential direction. In the present embodiment, four claw portions 41 are provided at equiangular intervals in the circumferential direction.
  • the transmission mechanism 42 includes a contact portion 43 provided for each claw portion 41 and a plurality of bars 44 and 45.
  • the contact portion 43 is a bar member extending in the vertical direction, and a part thereof is disposed in the contact portion accommodating portion 431 provided on the upper surface of the support portion base 142.
  • An annular upper support portion 432 and a lower support portion 433 are provided in the contact portion accommodating portion 431, and the contact portion 43 is movable in the vertical direction by the upper and lower support portions 432 and 433. Supported.
  • a lower end portion of the contact portion 43 is disposed in an internal space 143 formed in the support portion base 142.
  • a bar 44 is disposed in the internal space 143, and one end portion of the bar 44 is connected to the lower end portion of the contact portion 43 via a pin 421.
  • a long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441.
  • the bar 44 is supported by a bar support portion 440 provided in the internal space 143 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • the other end of the bar 44 is connected via a pin 422 to the lower end of another bar 45 that extends approximately in the vertical direction.
  • a long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451.
  • a communication hole 145 that communicates with the internal space 143 is provided on the upper surface of the support base 142, and the bar 45 is inserted into the communication hole 145.
  • the bar 45 is supported by a bar support portion 450 fixed around the communication hole 145 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • a portion above the bar support portion 450 is disposed outside the internal space 143 of the support portion base 142, and the periphery thereof is covered with a substantially cylindrical bellows 423.
  • a claw portion 41 is attached to the upper end portion of the bar 45.
  • the bellows 423 is formed of a material that does not allow the passage of gas or liquid.
  • a disc portion 434 centered on the contact portion 43 is attached to the contact portion 43.
  • the disc part 434 is disposed between the upper support part 432 and the lower support part 433 in the contact part accommodating part 431.
  • surroundings of the contact part 43 is provided.
  • the disk portion 434 and the contact portion 43 are urged upward by the spring 435, and the disk portion 434 contacts the lower surface of the upper support portion 432 as shown in FIG.
  • the end portion of the bar 44 on the bar 45 side is positioned below the end portion on the contact portion 43 side, and the bar 45 is in the vertical direction. Approximately upright along.
  • claw part 41 is arrange
  • An elastic member 436 formed of rubber or the like is provided on a part (or all) of the contact portion 43, and the contact portion 43 can be slightly expanded and contracted in the longitudinal direction.
  • the configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41.
  • FIG. 4 is a diagram showing the flow of processing of the substrate 9 in the substrate processing apparatus 1.
  • the substrate processing apparatus 1 in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and located above, and the cup part 161 is separated from the chamber lid part 122 and located below.
  • the substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support 141 (step S10).
  • the state of the chamber 12 and the cup part 161 shown in FIG. 1 is referred to as an “open state”.
  • the opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”.
  • the chamber lid 122 is separated from the chamber main body 121, whereby an annular opening 81 is formed around the substrate 9 (that is, radially outside).
  • the substrate 9 is carried in via the annular opening 81.
  • the chamber opening / closing mechanism 131 lowers the chamber lid 122 from the position shown in FIG. 1 to the position shown in FIG. 5 (position close to the chamber body 121). Further, the cup portion 161 rises from the position shown in FIG. 1 to the position shown in FIG. 5, and is located over the entire circumference on the radially outer side of the annular opening 81.
  • the state of the chamber 12 and the cup part 161 shown in FIG. 5 is referred to as a “first sealed state”.
  • the position of the cup part 161 shown in FIG. 5 is referred to as a “liquid receiving position”, and the position of the cup part 161 shown in FIG.
  • the cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.
  • the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber cover part 122 and the upper surface part 612 of the cup part 161, the seal part which prevents passage of gas and a liquid is formed. Thereby, a sealed space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163 is formed.
  • the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this.
  • the upper end portion of the abutting portion 43 protruding upward from the abutting portion accommodating portion 431 is formed in the concave portion 242 of the lower portion of each engaging portion 241 of the top plate 123. fit.
  • the top plate 123 is connected to the support base 142 of the substrate support 141.
  • the relative position in the rotation direction (circumferential direction) of the top plate 123 with respect to the substrate support 141 is fixed.
  • a position where the top plate 123 is connected to the substrate support portion 141 is referred to as a “connection position”.
  • the rotation position of the support base 142 is controlled by the substrate rotation mechanism 15 so that the engagement portion 241 and the contact portion 43 are fitted.
  • magnets 437 and 243 are provided on the upper end surface of each abutting portion 43 and the surface in the concave portion 242 of the engaging portion 241 facing the upper end surface, and between these magnets 437 and 243.
  • the engaging portion 241 and the contact portion 43 are firmly coupled to each other by the magnetic force (attraction) acting on the.
  • the flange portion 239 of the supported portion 237 is spaced above the flange portion 224 of the plate support portion 222, and the plate support portion 222 and the supported portion 237 are not in contact with each other.
  • the support of the top plate 123 by the plate support part 222 that is, the indirect support of the top plate 123 by the chamber opening / closing mechanism 131 is released.
  • the top plate 123 can be rotated by the substrate rotating mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.
  • the contact portion 43 is pushed downward by the weight of the top plate 123 until the lower surface of the engagement portion 241 contacts the upper surface of the contact portion accommodating portion 431.
  • the end of the bar 44 on the side of the bar 45 moves above the end on the side of the contact part 43, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9.
  • the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1.
  • the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41, respectively, and the plurality of claw portions 41 arranged in the circumferential direction cause the different portions of the edge of the substrate 9 to have substantially the same force. It is pushed toward the central axis J1. As a result, the substrate 9 is firmly held by the chuck portion 4 while the center of the substrate 9 is disposed on the central axis J1 (step S11). Even when the size (diameter) of the substrate 9 supported by the substrate support portion 141 varies, the amount of contraction of the elastic member 436 of the contact portion 43 changes, so that the lower surface of the engagement portion 241 is changed. It abuts on the upper surface of the abutting portion accommodating portion 431. Accordingly, the vertical distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.
  • the substrate rotation mechanism 15 shown in FIG. 5 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”).
  • the supply of the inert gas (here, nitrogen gas) from the inert gas supply unit 186 (see FIG. 2) to the expanded sealed space 100 is started, and the gas in the expanded sealed space 100 by the outer exhaust unit 194 is started. Starts to be discharged.
  • the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration). Note that the supply of the inert gas to the enlarged sealed space 100 and the discharge of the gas in the enlarged sealed space 100 may be performed from the open state shown in FIG.
  • heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the rotating substrate 9.
  • the substrate 9 is heated.
  • medical solution is started toward the center part of the upper surface 91 of the board
  • the chemical solution from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9.
  • the chemical solution on the upper surface 91 spreads to the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and the entire upper surface 91 is covered with the chemical solution.
  • the ejection of the heated gas from the heated gas supply nozzle 180 is also continued. Thereby, etching with respect to the upper surface 91 with a chemical
  • the lower surface of the top plate 123 positioned at the connection position extends along the upper surface 91 of the substrate 9 so as to cover the substrate 9 above the substrate 9, and the upper surface 91 of the substrate 9. Is close to.
  • the treatment with the chemical solution for the substrate 9 is performed in a very narrow space between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9. Thereby, the uniformity of the chemical treatment for the substrate 9 can be further improved.
  • the chemical liquid splashed from the upper surface 91 of the rotating substrate 9 is received by the cup portion 161 through the annular opening 81 and guided to the liquid receiving recess 165.
  • the chemical liquid guided to the liquid receiving recess 165 flows into the gas-liquid separator 193 via the first discharge path 191 shown in FIG.
  • the chemical solution recovery unit 195 the chemical solution is recovered from the gas-liquid separation unit 193 and is reused after impurities and the like are removed from the chemical solution through a filter or the like.
  • a predetermined time for example, 60 to 120 seconds
  • supply of the chemical solution from the upper nozzle 181 and supply of the heated gas from the heated gas supply nozzle 180 are stopped.
  • the substrate rotation mechanism 15 makes the rotation speed of the substrate 9 higher than the steady rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical solution is removed from the substrate 9.
  • the chamber lid part 122 and the cup part 161 move downward in synchronization.
  • the lip seal 231 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160.
  • the cup part 161 is located at the retracted position as in FIG.
  • the state of the chamber 12 and the cup part 161 shown in FIG. 7 is referred to as a “second sealed state”.
  • the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.
  • the plurality of claws 41 of the chuck portion 4 push the edge of the substrate 9 toward the central axis J1, whereby the substrate 9 is firmly held. Further, the holding of the top plate 123 by the plate support unit 222 is released, and the top plate 123 rotates together with the substrate holding unit 14 and the substrate 9 independently of the chamber lid unit 122.
  • step S13 When the chamber space 120 is sealed, gas discharge by the outer exhaust unit 194 (see FIG. 2) is stopped and gas discharge from the chamber space 120 by the inner exhaust unit 198 is started. Then, the supply of pure water to the substrate 9 is started by the pure water supply unit 184 (step S13).
  • Pure water from the pure water supply unit 184 is continuously supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9.
  • the pure water from the pure water supply unit 184 is also continuously supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9. Pure water discharged from the upper nozzle 181 and the lower nozzle 182 is supplied to the substrate 9 as a cleaning liquid.
  • the pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside.
  • Pure water splashing from the substrate 9 is received by the inner wall of the chamber 12 (that is, the inner walls of the chamber lid portion 122 and the chamber side wall portion 214), and the second discharge path 192, the gas-liquid separation portion 197, and the discharge portion shown in FIG. It is discarded through the liquid part 199 (the same applies to the drying process of the substrate 9 described later).
  • the cleaning of the chamber 12 is substantially performed together with the cleaning process for the substrate 9 with pure water.
  • the supply of pure water from the pure water supply unit 184 is stopped.
  • the heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the substrate 9.
  • the substrate 9 is heated.
  • the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the heating gas is continuously ejected from the heating gas supply nozzle 180.
  • pure water is removed from the substrate 9, and the substrate 9 is dried (step S14).
  • the rotation of the substrate 9 is stopped.
  • IPA Prior to the drying process of the substrate 9, IPA may be supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed in a reduced pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.
  • step S14 since the top plate 123 rotates together with the substrate support 141, almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no.
  • FIG. 8 is a cross-sectional view showing the vicinity of the substrate holder in the substrate processing apparatus of the comparative example.
  • the substrate holding unit 95 includes a substantially annular substrate support unit 96 that supports the outer edge portion of the substrate 9 from the lower side, and the outer edge portion of the substrate 9 supported by the substrate support unit 96 on the upper side.
  • the substrate support portion 96 includes a substantially annular plate-like support portion base 960 and a plurality of first contact portions 961 fixed to the upper surface of the support portion base 960.
  • the plurality of first contact portions 961 are arranged in the circumferential direction. Arranged.
  • the substrate pressing portion 97 includes a plurality of second contact portions 971 fixed to the lower surface of the top plate 123, and the plurality of second contact portions 971 are arranged in the circumferential direction.
  • a plurality of engagement portions 951 are arranged in the circumferential direction
  • a plurality of engagement pins 952 are arranged in the circumferential direction.
  • the substrate pressing portion 97 presses the substrate 9 against the substrate supporting portion 96 by the weight of the top plate 123, so that the substrate 9 is moved from above and below by the substrate pressing portion 97 and the substrate supporting portion 96. Sandwiched.
  • the plurality of first contact portions 961 in the support portion base 960 are matched with the substrate 9 having the maximum diameter in the SEMI (SemiconductoremiEquipment and Materials International) standard.
  • the position and shape, and the positions and shapes of the plurality of second contact portions 971 on the top plate 123 are determined.
  • the substrate processing apparatus of the comparative example when the substrate 9 having a diameter smaller than the maximum diameter in the above standard is carried in, when the processing liquid is supplied to the substrate 9 or when acceleration / deceleration of the rotation of the substrate 9 is performed.
  • the position of the substrate 9 on the substrate support 96 may fluctuate (that is, the substrate 9 moves slightly).
  • the substrate 9 and the contact portions 961 and 971 are rubbed to generate contaminants, and the contact portions 961 and 971 are worn. Further, if the position of the substrate 9 varies greatly, the substrate 9 may be damaged.
  • the end surface of the first contact portion 961 is an inclined surface for alignment. However, even if such an inclined surface is provided, the substrate 9 is not necessarily aligned accurately. Absent.
  • the substrate support portion 141 is provided with the chuck portion 4 having the plurality of claw portions 41 and the transmission mechanism 42, and when the top plate 123 is positioned at the coupling position, Each contact portion 43 of the transmission mechanism 42 is pushed in the vertical direction by its own weight.
  • the transmission mechanism 42 causes the plurality of claw portions 41 to push the edge of the substrate 9 toward the central axis J ⁇ b> 1 by transmitting the force acting on each contact portion 43 to the corresponding claw portion 41.
  • substrate 9 can be hold
  • the position of the substrate 9 on the substrate support portion 141 can be prevented from fluctuating when the processing liquid is supplied to the substrate 9 or when the rotation of the substrate 9 is accelerated / decelerated. Can be prevented.
  • the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned.
  • the center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
  • the top plate 123 arranged at the connection position is close to the upper surface 91 of the substrate 9 and covers the upper surface 91. Thereby, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid scattered from the outer edge portion of the substrate 9 is prevented from splashing on the inner wall of the chamber 12 and reattaching to the upper surface 91 of the substrate 9.
  • the transmission mechanism 42 includes the elastic member 436, and the elastic member 436 is elastically deformed when the size of the substrate 9 supported by the substrate support unit 141 varies. Thereby, the distance between the top plate 123 and the board
  • the substrate rotation mechanism 15 includes an annular rotor portion 152 centered on the central axis J1, and an annular stator portion 151 that faces the rotor portion 152 in the radial direction with a gap.
  • the substrate support unit 141 is connected to the rotor unit 152, and the substrate support unit 141 and the rotor unit 152 rotate without contacting the chamber 12 in the chamber 12.
  • a power source such as electricity or compressed air
  • FIG. 9 is a diagram showing another example of the chuck portion.
  • the transmission mechanism 42a of the chuck portion 4a in FIG. 9 includes an abutting portion 43 and a plurality of shafts 46 and 47 provided for each claw portion 41a.
  • the internal structure of the contact part 43 and the contact part accommodating part 431 is the same as that of FIG.
  • FIG. 10 is a perspective view showing the contact portion 43 and the plurality of shafts 46 and 47.
  • a shaft 46 extending in a direction perpendicular to the central axis J1 (lateral direction in FIG. 9) is disposed in the internal space 143 of the support base 142.
  • the shaft 46 is supported by a pair of shaft support portions 460 so as to be rotatable about its central axis J2.
  • one end of a bar 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end of the shaft 46, and the other end of the bar 461 is in contact with the other end.
  • the lower end of the portion 43 is connected via a pin 424.
  • a long hole 462 extending in the longitudinal direction of the bar 461 is formed in the bar 461, and the pin 424 is inserted into the long hole 462.
  • a lower portion of another shaft 47 extending in the vertical direction is disposed in the internal space 143 of the support portion base 142.
  • the shaft 47 is supported by the shaft support portion 470 so as to be rotatable about its central axis J3.
  • one end of a bar 463 extending in a direction perpendicular to the central axis J ⁇ b> 2 of the shaft 46 is fixed to the other end of the shaft 46, and the other end of the bar 463 is fixed to the shaft 47.
  • a long hole 464 extending in the longitudinal direction of the bar 463 is formed in the bar 463, and the pin 425 is inserted into the long hole 464.
  • FIG. 11 is a plan view showing one claw portion 41a, showing the claw portion 41a viewed along the vertical direction.
  • the claw portion 41a has a claw portion main body 411 whose shape viewed along the vertical direction is elliptical.
  • An upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the elliptical long axis toward the other end.
  • On the upper surface 412 of the claw body 411 a protrusion 413 that protrudes upward is provided near the position where the height is the largest.
  • the protrusion 413 has an inverted truncated cone shape in which the upper diameter is larger than the lower diameter.
  • the claw portion main body 411 is fixed to the upper surface of the covered claw portion support base 410.
  • the portion excluding the lower portion is disposed outside the internal space 143 of the support portion base 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410.
  • the periphery of the portion of the shaft 47 disposed outside the internal space 143 is surrounded by the side wall portion of the claw support base 410.
  • the connecting portion between the side wall portion of the claw support base 410 and the support portion base 142 is sealed in a state where both can slide.
  • the claw body 411 rotates around the central axis J3 from the rotation position indicated by the two-dot chain line in FIG. 11 to the rotation position indicated by the solid line, as indicated by the solid line in FIG.
  • the side surface of the protruding portion 413 contacts the edge of the substrate 9 while the substrate 9 moves slightly upward.
  • the outer edge portion of the substrate 9 bites into the recess formed by the side surface of the protruding portion 413 and the upper surface 412 of the claw portion main body 411.
  • forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41a arranged along the outer edge of the substrate 9, respectively, and different portions of the edge of the substrate 9 are transmitted by the plurality of claw portions 41a.
  • FIG. 12 is a diagram showing still another example of the chuck portion. 12 is provided on the top plate 123. As shown in FIG. In FIG. 12, the cross section by the surface containing the central axis J1 is shown about the top plate 123 and a part of structure in the contact part accommodating part 431.
  • the chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. The plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1.
  • the transmission mechanism 42b has a structure similar to that obtained by inverting the transmission mechanism 42 in FIG. 3 in the vertical direction.
  • the transmission mechanism 42 b includes an abutting portion 43 provided for each claw portion 41 and a plurality of bars 44 and 45.
  • the contact portion 43 is supported by the upper support portion 432 and the lower support portion 433 so as to be movable in the vertical direction.
  • a substantially cylindrical contact portion receiving portion 431 is provided on the lower surface of the top plate 123, and the lower support portion 433 is provided in the contact portion receiving portion 431.
  • An upper end portion of the contact portion 43 is disposed in an internal space 124 formed in the top plate 123.
  • a bar 44 is arranged in the internal space 124, and one end portion of the bar 44 is connected to the upper end portion of the contact portion 43 via a pin 421.
  • a long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441.
  • the bar 44 is supported by the bar support portion 440 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • the other end of the bar 44 is connected to the upper end of another bar 45 via a pin 422.
  • a long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451.
  • the bar 45 is supported by the bar support portion 450 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • a portion below the bar support portion 450 is disposed outside the internal space 124 of the top plate 123.
  • the periphery of the bar 45 in the vicinity of the lower side of the bar support 450 is covered with a diaphragm seal 427.
  • a claw portion 41 is attached to the lower end portion of the bar 45.
  • the disc part 434 attached to the contact part 43 is arranged between the upper support part 432 and the lower support part 433.
  • a spring 435 surrounding the periphery of the contact portion 43 is provided between the disc portion 434 and the upper support portion 432.
  • the disk portion 434 and the contact portion 43 are urged downward by the spring 435.
  • the inclination angle of the bar 45 with respect to the vertical direction is small.
  • the claw portion 41 is separated from the edge of the substrate 9 to the outside.
  • An engaging portion 241a that protrudes upward is provided on the upper surface of the support portion base 142, and when the top plate 123 is located at the coupling position, the abutting portion that protrudes downward from the abutting portion accommodating portion 431.
  • the lower end portion of 43 fits into the recess 242a at the top of the engaging portion 241a.
  • the top plate 123 is connected to the substrate support portion 141.
  • the contact portion 43 is pushed upward by the substrate support portion 141 until the upper surface of the engagement portion 241 a contacts the lower surface of the contact portion accommodating portion 431.
  • the bar 45 is inclined so that the lower end portion of the bar 45 approaches the substrate 9, and the claw portion 41 comes into contact with the edge of the substrate 9.
  • the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41 arranged along the outer edge of the substrate 9, respectively, and the plurality of claw portions 41 are different parts of the edge of the substrate 9. Is pushed toward the central axis J1.
  • the chuck portion 4b shown in FIG. 12 it is possible to hold the substrate 9 while aligning it with the center of rotation using the weight of the top plate 123 arranged at the connection position.
  • the chuck part is provided in the substrate support part 141 from the viewpoint of preventing the processing liquid splashed from the upper surface 91 of the substrate 9 from splashing and adhering to the upper surface 91 by the components of the transmission mechanism connected to the claw part. It is preferred that
  • the substrate processing apparatus 1 can be variously modified.
  • a screw may be formed at an end portion of the shaft 46 on the shaft 47 side, and the screw may be screwed into the shaft 47 because it is provided on the shaft 47.
  • the shaft 46 rotates about the central axis J2
  • the shaft 47 linearly extends in the direction along the upper surface 91 of the substrate 9 (left-right direction in FIG. 9).
  • the transmission mechanism interlocks the force acting on one or a plurality of contact portions 43 in addition to the structure that transmits the force acting on the contact portion 43 provided for each claw portion only to the claw portion. And a structure for transmitting to a plurality of claws.
  • the elastic member that is elastically deformed so that the distance between the top plate 123 and the substrate 9 at the connection position is constant is the contact of the transmission mechanism. It may be provided other than the contact part 43. When the distance between the top plate 123 and the substrate 9 at the coupling position is allowed to slightly vary depending on the size of the substrate 9, the elastic member may be omitted from the transmission mechanism.
  • the chamber opening / closing mechanism 131 that is a sealed space opening / closing mechanism also serves as (a part of) the opposed portion support mechanism that supports the top plate 123 that is the upper surface opposed portion, whereby the structure of the substrate processing apparatus 1 is configured.
  • the facing portion support mechanism may be provided separately from the chamber opening / closing mechanism 131.
  • a top plate moving mechanism 126 that moves the top plate 123 in the vertical direction is provided as an opposing portion supporting mechanism.
  • the top plate moving mechanism 126 includes a first magnet 261, a second magnet 262, and a magnet moving mechanism 263.
  • Each of the first magnet 261 and the second magnet 262 has a substantially annular shape centered on the central axis J1.
  • a cylindrical top plate shaft portion 235 formed of a non-magnetic material is provided on the top surface of the top plate 123, and the first magnet 261 is an outer peripheral surface of the top plate shaft portion 235 inside the top plate shaft portion 235. It is arranged along.
  • the second magnet 262 is disposed so as to surround the top plate shaft portion 235 in the annular hole 264 formed in the chamber lid portion 122.
  • the second magnet 262 moves up and down in the annular hole 264 by the magnet moving mechanism 263.
  • the top plate 123 can move relative to the substrate support portion 141 between a separation position where the top plate 123 is spaced upward with respect to the substrate support portion 141 and a connection position where the top plate 123 is connected to the substrate support portion 141. It becomes possible.
  • the chamber opening / closing mechanism 131 may raise and lower the chamber lid 122 relative to the chamber main body 121, and the chamber main body 121 may move up and down relative to the chamber lid 122 whose position is fixed. Also in this case, the chamber main body 121 is raised and the upper end portion of the chamber main body 121 is brought close to or in contact with the chamber lid portion 122, so that the top plate 123 is brought into a non-contact state with the chamber lid portion 122 and disposed at the coupling position. (See FIG. 5 or FIG. 7).
  • the chamber main body 121 is lowered and separated from the chamber lid portion 122, so that the top plate 123 is suspended from a part of the chamber lid portion 122 located above the chamber main body 121 and arranged at the separation position (see FIG. 1).
  • the opposed portion support mechanism that selectively arranges the top plate 123 at the separation position and the connection position can be realized by various structures.
  • an annular plate-like member facing only the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface facing portion. Also in this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid splashing from the outer edge of the substrate 9 rebounds on the inner wall of the chamber 12 and reattaches to the upper surface 91 of the substrate 9. This is prevented by the annular plate-like member disposed in the frame. As described above, the substrate processing apparatus 1 is provided with the upper surface facing portion facing at least the outer edge portion of the upper surface 91 of the substrate 9.
  • stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed.
  • the stator part 151 may be provided inside the rotor part 152 (center axis J1 side).
  • the rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide.
  • the substrate rotation mechanism 15 is not necessarily a hollow motor.
  • a substrate rotation mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate support 141 may be used.
  • the substrate support 141, the rotor 152 of the substrate rotation mechanism 15, the top plate 123, and the chucks 4, 4 a and 4 b are provided in the chamber 12 which is a sealed space forming unit and sealed.
  • the processing for the substrate 9 is performed in the internal space, but depending on the design of the substrate processing apparatus, the processing for the substrate 9 may be performed in the open space.
  • the substrate processed by the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.
  • FIG. 14 is a sectional view showing a substrate processing apparatus 1a according to the second embodiment of the present invention.
  • the basic structure of the substrate processing apparatus 1a is the same as that of the substrate processing apparatus 1 of FIG. 1 (including the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 of FIG. 2), and the same reference numerals are given to the same configurations.
  • differences from the substrate processing apparatus 1 will be mainly described.
  • the engaging pin 140 and the engaging portion 241 are arranged at different positions in the circumferential direction from the plurality of claw portions 41.
  • the number of combinations of the engagement pin 140 and the engagement portion 241 is preferably 3 or more.
  • a plurality of rod-like connection members 52 extending in the vertical direction are provided on the upper portion of the rotor portion 152, and the rotor portion 152 is connected to the support portion base 142 of the substrate support portion 141 by the plurality of connection members 52.
  • the plurality of connection members 52 are preferably arranged at equiangular intervals in the circumferential direction.
  • the weight portion 51 is provided with a plurality of through holes 511 (see FIG. 15) penetrating in the vertical direction.
  • the plurality of connection members 52 described above are inserted into the plurality of through holes 511, respectively.
  • the weight 51 can move in the vertical direction along the connecting member 52 while the inner peripheral surface of each through hole 511 of the weight 51 slides on the outer peripheral surface of the connecting member 52.
  • the plurality of connection members 52 are guide portions that guide the vertical movement of the weight portion 51 between the substrate support portion 141 and the rotor portion 152 disposed below the substrate support portion 141.
  • FIG. 15 is a diagram showing the configuration of the chuck portion 4 and the weight support mechanism 53, and shows an enlarged vicinity of the left cross section showing the support portion base 142 in FIG.
  • the chuck portion 4 is provided on the substrate support portion 141, and a part of the chuck portion 4 is provided inside an annular support portion base 142 centered on the central axis J ⁇ b> 1.
  • the chamber body 121, the weight portion 51, the support portion base 142, and a connecting portion support portion 492 and a bellows 493 to be described later are shown in a cross section by a plane including the central axis J ⁇ b> 1 (FIGS. 16 and 19). And the same in FIG. 23).
  • the chuck portion 4 includes the plurality of claw portions 41 and the transmission mechanism 42 described above. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144.
  • the number of the plurality of claw portions 41 is at least 3, and in each combination of two claw portions 41 adjacent in the circumferential direction among the at least three claw portions 41, the two claw portions 41 and the central axis J1 The angle formed by the line connecting the two is less than 180 degrees.
  • the at least three claw portions 41 are preferably provided at equiangular intervals in the circumferential direction. In the present embodiment, four claw portions 41 are provided at equiangular intervals in the circumferential direction.
  • the transmission mechanism 42 includes a connecting portion 49 provided for each claw portion 41 and a plurality of bars 44 and 45.
  • the connecting portion 49 is a bar member extending in the vertical direction, and is supported by a cylindrical connecting portion support portion 492 provided on the lower surface of the support portion base 142 so as to be movable in the vertical direction.
  • a lower end portion of the connecting portion 49 is connected to the weight portion 51.
  • a substantially cylindrical bellows 493 is provided on the lower end surface of the connecting portion support portion 492.
  • the bellows 493 is formed of a material that does not allow the passage of gas or liquid.
  • the connecting portion between the bellows 493 and the connecting portion 49, the connecting portion between the bellows 493 and the connecting portion supporting portion 492, and the connecting portion between the connecting portion supporting portion 492 and the supporting portion base 142 are sealed, and gas or liquid Passage is prevented.
  • the upper end portion of the connecting portion 49 is disposed in an internal space 143 formed in the support portion base 142.
  • a bar 44 is disposed in the internal space 143, and one end of the bar 44 is connected to the upper end of the connecting portion 49 via a pin 421.
  • a long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441.
  • the bar 44 is supported by a bar support portion 440 provided in the internal space 143 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • the other end of the bar 44 is connected via a pin 422 to the lower end of another bar 45 that extends approximately in the vertical direction.
  • a long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451.
  • a communication hole 145 that communicates with the internal space 143 is provided on the upper surface of the support base 142, and the bar 45 is inserted into the communication hole 145.
  • the bar 45 is supported by a bar support portion 450 fixed around the communication hole 145 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • a portion above the bar support portion 450 is disposed outside the internal space 143 of the support portion base 142, and the periphery thereof is covered with a substantially cylindrical bellows 423.
  • a claw portion 41 is attached to the upper end portion of the bar 45.
  • the bellows 423 is formed of a material that does not allow the passage of gas or liquid.
  • the connection part between the bellows 423 and the claw part 41, the connection part between the bellows 423 and the bar support part 450, and the connection part between the bar support part 450 and the support part base 142 are sealed, and the passage of gas or liquid is prevented. Is prevented.
  • the chamber side wall 214 is provided with a recess 218 that opens toward the lower annular space 217, and the recess 218 is provided with a weight support mechanism 53.
  • the weight support mechanism 53 includes an air cylinder 531, and a support member 533 is attached to the tip of the piston rod 532 of the air cylinder 531.
  • the front end surface (surface on the central axis J1 side) 534 of the support member 533 is an inclined surface that is separated from the central axis J1 as it goes upward.
  • a bellows 535 is provided between the main body of the air cylinder 531 and the support member 533 so as to surround the piston rod 532.
  • the bellows 535 is formed of a material that does not allow gas or liquid to pass therethrough, and prevents the gas or liquid from entering the air cylinder 531.
  • the outer edge portion of the weight portion 51 is supported from below by the support member 533, and the weight portion 51 is a position shown in FIG. 15 (hereinafter referred to as “support position”). Placed in.
  • the connecting portion 49 is pushed upward by the weight portion 51 located at the support position. Therefore, the end of the bar 44 on the bar 45 side is located below the end of the connecting part 49, and the bar 45 is substantially upright along the vertical direction.
  • claw part 41 is arrange
  • the configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41.
  • the weight support mechanism 53 may have a motor or the like.
  • the flow of processing of the substrate 9 in the substrate processing apparatus 1a will be described with reference to FIG.
  • the substrate processing apparatus 1a in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and positioned above, and the cup part 161 is spaced apart from the chamber lid part 122 and positioned below.
  • the substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support 141 (step S10).
  • the state of the chamber 12 and the cup part 161 shown in FIG. 14 is referred to as an “open state”.
  • the opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”.
  • annular opening 81 is formed around the substrate 9 (that is, radially outside).
  • step S ⁇ b> 10 the substrate 9 is carried in via the annular opening 81.
  • the air cylinder 531 of the weight support mechanism 53 shown in FIG. 15 draws the piston rod 532 slowly, so that the support member 533 is recessed 218 of the chamber side wall 214 as shown in FIG. Move in. Thereby, the front end surface 534 of the support member 533 is separated from the outer edge portion of the weight portion 51, and the support of the weight portion 51 by the weight support mechanism 53 is released.
  • the connecting portion 49 and the weight portion 51 descend from the support position indicated by the two-dot chain line in FIG.
  • the end of the bar 44 on the bar 45 side moves to the upper side of the end on the connecting part 49 side, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9.
  • the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1.
  • the forces acting on the plurality of connecting portions 49 are transmitted to the plurality of claw portions 41, respectively, and the different portions of the edge of the substrate 9 are centered by substantially the same force by the plurality of claw portions 41 arranged in the circumferential direction. It is pushed toward the axis J1.
  • the substrate 9 is firmly held by the chuck portion 4 while the center of the substrate 9 is disposed on the central axis J1 (step S11).
  • the plurality of claws 41 abut against the edge of the substrate 9 to restrict the downward movement of the weight 51, and the weight 51 is located at a position indicated by a solid line in FIG. It is referred to as “release position”.
  • the chamber opening / closing mechanism 131 lowers the chamber lid 122 from the position shown in FIG. 14 to the position shown in FIG. 17 (position close to the chamber body 121). Further, the cup portion 161 rises from the position shown in FIG. 14 to the position shown in FIG. 17 and is located over the entire circumference on the radially outer side of the annular opening 81.
  • the state of the chamber 12 and the cup part 161 shown in FIG. 17 is referred to as a “first sealed state”. 17 is referred to as a “liquid receiving position”, and the position of the cup 161 illustrated in FIG. 14 is referred to as a “retracted position”.
  • the cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.
  • the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber cover part 122 and the upper surface part 612 of the cup part 161, the seal part which prevents passage of gas and a liquid is formed. Thereby, a sealed space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163 is formed.
  • the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this.
  • the upper end portion of the engagement pin 140 protruding upward from the support portion base 142 is fitted into the concave portion below each engagement portion 241 of the top plate 123.
  • the top plate 123 is connected to the support base 142 of the substrate support 141.
  • the relative position in the rotation direction (circumferential direction) of the top plate 123 with respect to the substrate support 141 is fixed.
  • a position where the top plate 123 is connected to the substrate support portion 141 is referred to as a “connection position”.
  • each engagement pin 140 magnets are provided on the upper end surface of each engagement pin 140 and the surface in the concave portion of the engagement portion 241 facing the upper end surface, and a magnetic force (attraction) acting between these magnets is provided.
  • the engaging portion 241 and the engaging pin 140 are firmly coupled.
  • the flange portion 239 of the supported portion 237 is spaced above the flange portion 224 of the plate support portion 222, and the plate support portion 222 and the supported portion 237 are not in contact with each other.
  • the support of the top plate 123 by the plate support part 222 that is, the indirect support of the top plate 123 by the chamber opening / closing mechanism 131 is released.
  • the top plate 123 can be rotated by the substrate rotating mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.
  • the substrate rotation mechanism 15 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”).
  • the supply of the inert gas (here, nitrogen gas) from the inert gas supply unit 186 (see FIG. 2) to the expanded sealed space 100 is started, and the gas in the expanded sealed space 100 by the outer exhaust unit 194 is started. Starts to be discharged.
  • the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration).
  • the supply of the inert gas to the expanded sealed space 100 and the discharge of the gas in the expanded sealed space 100 may be performed from the open state shown in FIG.
  • step S12 heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. And supply of a chemical
  • the operation related to the supply of the chemical solution in step S12 is the same as that in the first embodiment.
  • the chamber lid part 122 and the cup part 161 move downward in synchronization.
  • the lip seal 231 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160.
  • the cup portion 161 is located at the retracted position as in FIG.
  • the state of the chamber 12 and the cup part 161 shown in FIG. 18 is referred to as a “second sealed state”.
  • the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.
  • the plurality of claws 41 of the chuck portion 4 push the edge of the substrate 9 toward the central axis J1, whereby the substrate 9 is firmly held. Further, the holding of the top plate 123 by the plate support unit 222 is released, and the top plate 123 rotates together with the substrate holding unit 14 and the substrate 9 independently of the chamber lid unit 122.
  • step S13 The operation related to the supply of pure water in step S13 is the same as that in the first embodiment.
  • the supply of pure water from the pure water supply unit 184 is stopped.
  • the heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the substrate 9.
  • the substrate 9 is heated.
  • the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the heating gas is continuously ejected from the heating gas supply nozzle 180.
  • pure water is removed from the substrate 9, and the substrate 9 is dried (step S14).
  • the rotation of the substrate 9 is stopped.
  • IPA Prior to the drying process of the substrate 9, IPA may be supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed in a reduced pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.
  • step S14 since the top plate 123 rotates together with the substrate support 141, almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no.
  • the air cylinder 531 of the weight support mechanism 53 shown in FIG. 16 slowly pushes the piston rod 532, so that the front end surface 534 of the support member 533 comes into contact with the outer edge portion of the weight portion 51, and further along the front end surface 534.
  • the weight 51 is pushed upward. Accordingly, the weight portion 51 and the connecting portion 49 are arranged at the positions shown in FIG. 15, the bar 45 is substantially upright along the vertical direction, and the claw portion 41 is outward from the edge of the substrate 9 (opposite to the central axis J1). Apart). That is, the holding of the substrate 9 by the chuck portion 4 is released (step S15). Thereafter, the substrate 9 is unloaded from the chamber 12 by an external transport mechanism (step S16), and the processing of the substrate 9 by the substrate processing apparatus 1a is completed. Actually, the processes in steps S10 to S16 are repeated for the other substrates 9.
  • the substrate processing apparatus has a plurality of first portions in the support base 960 in accordance with the substrate 9 having the maximum diameter in the SEMI (Semiconductor Equipment and Materials International) standard.
  • the position and shape of the contact portion 961 and the positions and shapes of the plurality of second contact portions 971 on the top plate 123 are determined.
  • the substrate processing apparatus of the comparative example when the substrate 9 having a diameter smaller than the maximum diameter in the above standard is carried in, when the processing liquid is supplied to the substrate 9 or when acceleration / deceleration of the rotation of the substrate 9 is performed.
  • the position of the substrate 9 on the substrate support 96 may fluctuate (that is, the substrate 9 moves slightly).
  • the substrate 9 and the contact portions 961 and 971 are rubbed to generate contaminants, and the contact portions 961 and 971 are worn. Further, if the position of the substrate 9 varies greatly, the substrate 9 may be damaged.
  • the end surface of the first contact portion 961 is an inclined surface for alignment. However, even if such an inclined surface is provided, the substrate 9 is not necessarily aligned accurately. Absent.
  • the weight part 51 supported at the support position by the weight support mechanism 53, and the chuck part 4 having the plurality of claw parts 41 and the transmission mechanism 42 are provided.
  • the weight part 51 descends to a support release position below the support position by its own weight, and each connecting part of the transmission mechanism 42 connected to the weight part 51 49 is pulled downward.
  • the transmission mechanism 42 transmits the force acting on each connecting portion 49, that is, the force due to the weight of the weight portion 51, to the corresponding claw portion 41, so that the edges of the substrate 9 are centered on the central axis J 1. Push it toward you.
  • substrate 9 is hold
  • the position of the substrate 9 on the substrate support portion 141 can be prevented from fluctuating when the processing liquid is supplied to the substrate 9 or when the rotation of the substrate 9 is accelerated / decelerated. Can be prevented.
  • the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned.
  • the center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
  • the weight portion 51 is only lifted along the connecting member 52 which is a guide portion, which is excessive with respect to other configurations of the rotating body. There is no power. Therefore, the substrate 9 can be held and released without shifting the position of the rotating body. Further, since no metal member such as a spring is used in the chuck portion 4, the chemical resistance of the substrate holding portion 14 can be easily improved, and the substrate holding portion 14 that can be used in various chemical atmospheres is provided. Can be realized.
  • the substrate rotation mechanism 15 includes an annular rotor portion 152 centered on the central axis J1, and an annular stator portion 151 that faces the rotor portion 152 in the radial direction with a gap.
  • the substrate support unit 141 is connected to the rotor unit 152, and the substrate support unit 141 and the rotor unit 152 rotate without contacting the chamber 12 in the chamber 12.
  • the position of the weight portion 51 (support release position) when the support by the weight support mechanism 53 is released is greater than the position (support position) of the weight portion 51 when supported by the weight support mechanism 53. Close to 152. Thereby, generation
  • the support release position of the weight portion 51 can be regarded as a position for rotating the weight portion 51 together with the substrate 9 and the substrate support portion 141.
  • FIG. 19 is a diagram showing another example of the chuck portion.
  • the transmission mechanism 42a of the chuck portion 4a in FIG. 19 includes a connecting portion 49 and a plurality of shafts 46 and 47 provided for each claw portion 41a.
  • the structure of the connection part 49 and the connection part support part 492 is the same as that of FIG.
  • FIG. 20 is a perspective view showing the connecting portion 49 and the plurality of shafts 46 and 47.
  • a shaft 46 extending in a direction perpendicular to the central axis J ⁇ b> 1 (lateral direction in FIG. 19) is disposed in the internal space 143 of the support base 142.
  • the shaft 46 is supported by a pair of shaft support portions 460 so as to be rotatable about its central axis J2. As shown in FIG.
  • one end portion of a bar 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end portion of the shaft 46, and the other end portion of the bar 461 is a connecting portion.
  • 49 is connected to the upper end of 49 via a pin 424.
  • a long hole 462 extending in the longitudinal direction of the bar 461 is formed in the bar 461, and the pin 424 is inserted into the long hole 462.
  • the lower portion of another shaft 47 extending in the vertical direction is disposed in the internal space 143 of the support portion base 142.
  • the shaft 47 is supported by the shaft support portion 470 so as to be rotatable about its central axis J3.
  • one end of a bar 463 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to the other end of the shaft 46, and the other end of the bar 463 is fixed to the shaft 47.
  • a long hole 464 extending in the longitudinal direction of the bar 463 is formed in the bar 463, and the pin 425 is inserted into the long hole 464.
  • FIG. 21 is a plan view showing one claw portion 41a, showing the claw portion 41a viewed along the vertical direction.
  • the claw portion 41a has a claw portion body 411 whose shape viewed along the vertical direction is elliptical.
  • An upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the elliptical long axis toward the other end.
  • On the upper surface 412 of the claw body 411 a protrusion 413 that protrudes upward is provided near the position where the height is the largest.
  • the protrusion 413 has an inverted truncated cone shape in which the upper diameter is larger than the lower diameter.
  • the claw portion main body 411 is fixed to the upper surface of the covered claw portion support base 410.
  • the portion excluding the lower portion is disposed outside the internal space 143 of the support portion base 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410.
  • the periphery of the portion of the shaft 47 disposed outside the internal space 143 is surrounded by the side wall portion of the claw support base 410.
  • the connecting portion between the side wall portion of the claw support base 410 and the support portion base 142 is sealed in a state where both can slide.
  • FIG. 22 is a diagram illustrating another example of the weight support mechanism.
  • the weight support mechanism 53a shown in FIG. 22 can rotate the support arm 536 about a central axis J4 parallel to the vertical direction, and can move the support arm 536 up and down along the vertical direction.
  • the weight support mechanism 53a moves up the support arm 536, and then rotates about the central axis J4, so that the support arm 536 is disposed in the chamber 12 via the annular opening 81. Thereafter, the weight support mechanism 53 a moves down the support arm 536 and then rotates, whereby the support member 537 provided at the tip of the support arm 536 is disposed below the outer edge of the weight part 51. Then, when the weight support mechanism 53a slightly raises the support arm 536, the weight portion 51 is supported from below by the support member 537, and is disposed at the support position.
  • the support of the weight portion 51 is released by slightly lowering the support arm 536, and the weight portion 51 is disposed at the support release position.
  • the weight support mechanism 53a sequentially rotates, lifts, and rotates the support arm 536, thereby removing the support arm 536 from the chamber 12.
  • the weight support mechanism 53a may move the support arm 536 in the horizontal direction and move up and down in the vertical direction.
  • the weight support mechanism 53 may indirectly support the weight part 51 via the connecting part 49.
  • the connecting portion 49 protrudes above the upper surface of the supporting portion base 142, and a supported portion 498 that extends to the opposite side of the central axis J ⁇ b> 1 is provided at the upper end portion of the connecting portion 49. Then, the supported portion 498 is supported from below by the support member 533 of the weight support mechanism 53, whereby the weight portion 51 is disposed at the support position. Further, when the support of the supported portion 498 by the support member 533 of the weight support mechanism 53 is released, the weight portion 51 is disposed at the support release position.
  • the supported portion 498 of the connecting portion 49 shown in FIG. 23 may be supported by the weight support mechanism 53a of FIG.
  • FIG. 24 is a view showing a part of the substrate processing apparatus 1a according to the third embodiment of the present invention, and shows the configuration of the chuck portion 4b.
  • the weight part 51 and the weight support mechanism 53 are omitted and the structure of the chuck part 4b is different from that of the chuck part 4 of FIG. 15 as compared with the substrate processing apparatus 1a of FIG. .
  • Other configurations are the same as those in FIG. 15, and the same components are denoted by the same reference numerals.
  • the chuck part 4b of FIG. 24 is provided on the substrate support part 141, and a part of the chuck part 4b is located inside the annular support part base 142 centering on the central axis J1.
  • a part of the configuration within the support portion base 142 and the abutting portion accommodating portion 431 described later is shown by a cross section including the central axis J1 (the same applies to FIGS. 25 and 26 described later).
  • the chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. The plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144.
  • a contact portion 43 is provided for each claw portion 41 instead of the connecting portion 49 in the chuck portion 4 of FIG.
  • the contact portion 43 is a bar member extending in the vertical direction, and a part thereof is disposed in the contact portion accommodating portion 431 provided on the upper surface of the support portion base 142.
  • An annular upper support portion 432 and a lower support portion 433 are provided in the contact portion accommodating portion 431, and the contact portion 43 is movable in the vertical direction by the upper and lower support portions 432 and 433. Supported.
  • a lower end portion of the contact portion 43 is disposed in an internal space 143 formed in the support portion base 142.
  • the contact portion 43 is connected to the claw portion 41 via the bars 44 and 45.
  • the structure of the bars 44 and 45 is the same as that of the chuck portion 4 of FIG.
  • a disc portion 434 centered on the contact portion 43 is attached to the contact portion 43.
  • the disc part 434 is disposed between the upper support part 432 and the lower support part 433 in the contact part accommodating part 431.
  • surroundings of the contact part 43 is provided.
  • the disk portion 434 and the contact portion 43 are urged upward by the spring 435, and the disk portion 434 contacts the lower surface of the upper support portion 432 as shown in FIG.
  • the end of the bar 44 on the bar 45 side is positioned below the end of the contact portion 43, and the bar 45 is along the vertical direction. Approximately upright.
  • claw part 41 is arrange
  • An elastic member 436 formed of rubber or the like is provided on a part (or all) of the contact portion 43, and the contact portion 43 can be slightly expanded and contracted in the longitudinal direction.
  • the configuration included in the transmission mechanism 42 b is provided for each of the plurality of claw portions 41.
  • the contact part 43 also has the function of the engagement pin 140 of FIG.
  • magnets 437 and 243 are provided on the upper end surface of each abutting portion 43 and the surface in the concave portion 242 of the engaging portion 241 facing the upper end surface, and between these magnets 437 and 243.
  • the engaging portion 241 and the contact portion 43 are firmly coupled to each other by the magnetic force (attraction) acting on the.
  • the contact portion 43 is pushed downward by the weight of the top plate 123 until the lower surface of the engagement portion 241 contacts the upper surface of the contact portion accommodating portion 431.
  • the end of the bar 44 on the side of the bar 45 moves above the end on the side of the contact part 43, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9.
  • the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1.
  • the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41, respectively, and the plurality of claw portions 41 arranged in the circumferential direction cause the different portions of the edge of the substrate 9 to have substantially the same force. It is pushed toward the central axis J1. As a result, the substrate 9 is firmly held by the chuck portion 4b while the center of the substrate 9 is disposed on the central axis J1. Even when the size (diameter) of the substrate 9 supported by the substrate support portion 141 varies, the amount of contraction of the elastic member 436 of the contact portion 43 changes, so that the engagement portion 241 The lower surface comes into contact with the upper surface of the contact portion accommodating portion 431. Accordingly, the vertical distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.
  • the engaging portion 241 is separated from the contact portion 43 in the vertical direction, and the spring 435 is attached. Due to the force, the contact portion 43 rises to the position shown in FIG. Thereby, the bar 45 is substantially upright in the vertical direction, and the claw portion 41 is separated from the edge of the substrate 9 to the outside (on the side opposite to the central axis J1). That is, the holding of the substrate 9 by the chuck portion 4b is released.
  • the separated position can be regarded as the supporting position of the weight portion. Further, since the top plate 123 positioned at the connection position is released from the support by the chamber opening / closing mechanism 131 and the chamber lid part 122 (see FIGS. 17 and 18), the connection position is regarded as the support release position of the weight part. be able to.
  • the contact portions 43 of the transmission mechanism 42b are pushed in the vertical direction by the weight of the top plate 123.
  • the transmission mechanism 42b transmits the force acting on each contact portion 43 to the corresponding claw portion 41, thereby causing the plurality of claw portions 41 to push the edge of the substrate 9 toward the central axis J1.
  • the substrate 9 is held from the outside by the plurality of claw portions 41 by utilizing the weight of the top plate 123 arranged at the connection position.
  • the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned.
  • the center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
  • the transmission mechanism 42b includes the elastic member 436 and the size of the substrate 9 supported by the substrate support portion 141 varies, the elastic member 436 is elastically deformed. Thereby, the distance between the top plate 123 and the board
  • the elastic member 436 may be provided other than the contact portion 43 in the transmission mechanism 42b. When the distance between the top plate 123 and the substrate 9 at the coupling position is allowed to slightly vary depending on the size of the substrate 9, the elastic member may be omitted in the transmission mechanism.
  • the substrate processing apparatus 1a of FIG. 24 using the top plate 123 as the weight part it is not necessary to separately provide the weight part 51 and the weight support mechanism 53 unlike the substrate processing apparatus 1a of FIG. The structure can be simplified.
  • the substrate processing apparatus 1a of FIG. 14 having the weight portion 51 and the weight support mechanism 53 it is possible to dispose a scan nozzle or a brush for cleaning the upper surface 91 above the substrate 9 while omitting the top plate 123. It becomes.
  • FIG. 26 is a diagram showing another example of the chuck portion.
  • a contact portion 43 similar to that in FIGS. 24 and 25 is provided instead of the connecting portion 49 in the chuck portion 4a in FIG.
  • the side surface of the protruding portion 413 contacts the edge of the substrate 9 while the substrate 9 moves slightly upward.
  • forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41a arranged along the outer edge of the substrate 9, respectively, and different portions of the edge of the substrate 9 are transmitted by the plurality of claw portions 41a.
  • the chuck portion 4c shown in FIG. 26 it is realized that the substrate 9 is held while being aligned with the rotation center by using the weight of the top plate 123 arranged at the connection position.
  • FIG. 27 is a diagram showing still another example of the chuck portion.
  • the chuck portion 4d in FIG. 27 is provided on the top plate 123 which is a weight portion.
  • the top plate 123 and a part of the configuration in the contact portion accommodating portion 431 are shown in a cross section by a plane including the central axis J1.
  • the chuck portion 4d includes a plurality of claw portions 41 and a transmission mechanism 42d.
  • the plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1.
  • the transmission mechanism 42d has a structure similar to that obtained by inverting the transmission mechanism 42b in FIG. 24 in the vertical direction.
  • the transmission mechanism 42d includes a contact portion 43 and a plurality of bars 44 and 45 provided for each claw portion 41.
  • the contact portion 43 is supported by the upper support portion 432 and the lower support portion 433 so as to be movable in the vertical direction.
  • a substantially cylindrical contact portion receiving portion 431 is provided on the lower surface of the top plate 123, and the lower support portion 433 is provided in the contact portion receiving portion 431.
  • An upper end portion of the contact portion 43 is disposed in an internal space 124 formed in the top plate 123.
  • a bar 44 is arranged in the internal space 124, and one end portion of the bar 44 is connected to the upper end portion of the contact portion 43 via a pin 421.
  • a long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441.
  • the bar 44 is supported by the bar support portion 440 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • the other end of the bar 44 is connected to the upper end of another bar 45 via a pin 422.
  • a long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451.
  • the bar 45 is supported by the bar support portion 450 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
  • a portion below the bar support portion 450 is disposed outside the internal space 124 of the top plate 123.
  • the periphery of the bar 45 in the vicinity of the lower side of the bar support 450 is covered with a diaphragm seal 427.
  • a claw portion 41 is attached to the lower end portion of the bar 45.
  • the disc part 434 attached to the contact part 43 is arranged between the upper support part 432 and the lower support part 433.
  • a spring 435 surrounding the periphery of the contact portion 43 is provided between the disc portion 434 and the upper support portion 432.
  • the disk portion 434 and the contact portion 43 are urged downward by the spring 435.
  • the inclination angle of the bar 45 with respect to the vertical direction is small.
  • the claw portion 41 is separated from the edge of the substrate 9 to the outside.
  • An engaging portion 241a that protrudes upward is provided on the upper surface of the support portion base 142, and when the top plate 123 is located at the coupling position, the abutting portion that protrudes downward from the abutting portion accommodating portion 431.
  • the lower end portion of 43 fits into the recess 242a at the top of the engaging portion 241a.
  • the top plate 123 is connected to the substrate support portion 141.
  • the contact portion 43 is pushed upward by the substrate support portion 141 until the upper surface of the engagement portion 241 a contacts the lower surface of the contact portion accommodating portion 431.
  • the bar 45 is inclined so that the lower end portion of the bar 45 approaches the substrate 9, and the claw portion 41 comes into contact with the edge of the substrate 9.
  • the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41 arranged along the outer edge of the substrate 9, respectively, and the plurality of claw portions 41 are different parts of the edge of the substrate 9. Is pushed toward the central axis J1.
  • the chuck portion 4d shown in FIG. 27 it is realized that the substrate 9 is held while being aligned with the rotation center by utilizing the weight of the top plate 123 arranged at the coupling position.
  • the chuck part is provided in the substrate support part 141 from the viewpoint of preventing the processing liquid splashed from the upper surface 91 of the substrate 9 from splashing and adhering to the upper surface 91 by the components of the transmission mechanism connected to the claw part. It is preferred that
  • the substrate processing apparatus 1a can be variously modified.
  • a screw may be formed at the end of the shaft 46 on the shaft 47 side, and may be screwed to the screw because it is provided on the shaft 47 (the same applies to FIG. 26).
  • the shaft 46 rotates about the central axis J2
  • the shaft 47 moves linearly in the direction along the upper surface 91 of the substrate 9 (left and right direction in FIG. 19).
  • the transmission mechanism has one or a plurality of connection portions 49 or 1 other than the structure that transmits the force acting on the connection portion 49 or the contact portion 43 provided to each nail portion only to the nail portion.
  • the force acting on one or a plurality of contact portions 43 may be transmitted to the plurality of claw portions in conjunction with each other.
  • the chamber opening / closing mechanism 131 serving as a sealed space opening / closing mechanism also serves as a weight supporting mechanism (a part) for supporting the top plate 123 serving as a weight portion.
  • a weight support mechanism for supporting the top plate 123 may be provided separately from the chamber opening / closing mechanism 131.
  • the chamber opening / closing mechanism 131 may raise and lower the chamber lid 122 relative to the chamber main body 121, and the chamber main body 121 may move up and down relative to the chamber lid 122 whose position is fixed. Also in this case, by raising the chamber main body 121 and bringing the upper end portion of the chamber main body 121 close to or in contact with the chamber lid portion 122, the top plate 123 is brought into a non-contact state with the chamber lid portion 122, and the support release position (connection) (Refer to FIG. 17 or FIG. 18). In addition, the top plate 123 is suspended from a part of the chamber lid part 122 located above the chamber body 121 by being lowered and separated from the chamber lid part 122 and arranged at the support position (separation position). (See FIG. 14).
  • the chuck portion 4 in FIG. 15 and the weight portion 51 in the chuck portion 4a in FIG. 19 may be provided above or on the side of the support portion base 142.
  • the substrate processing apparatus 1a is arranged at the first relative position that is relatively different from the substrate support portion 141 in the vertical direction and the second relative position that is above the first relative position. Possible weights are provided at arbitrary positions.
  • the weight part is arranged at the second relative position by supporting the weight part by the weight support mechanism, and the weight part rotates together with the substrate 9 and the substrate support part 141 by releasing the support of the weight part. For the first relative position. And the force by the weight of the weight part located in the 1st relative position is transmitted to a plurality of claw parts by a transmission mechanism, and it is realized holding the board 9 in alignment with the rotation center. .
  • an annular plate-like member facing only the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface facing portion. Also in this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid splashing from the outer edge of the substrate 9 rebounds on the inner wall of the chamber 12 and reattaches to the upper surface 91 of the substrate 9. This is prevented by the annular plate-like member disposed in the frame. Thus, from the viewpoint of preventing re-adhesion of the processing liquid, it is preferable that the substrate processing apparatus 1 a is provided with an upper surface facing portion that faces at least the outer edge portion of the upper surface 91 of the substrate 9.
  • the shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed.
  • the stator part 151 may be provided inside the rotor part 152 (center axis J1 side).
  • the rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good.
  • the substrate support portion 141 and the weight portion 51 are annular with the central axis J1 as the center, so that the lower nozzle 182 and the plurality of heating gases are positioned at positions facing the lower surface 92 of the substrate 9.
  • the supply nozzle 180 can be easily arranged.
  • the substrate rotation mechanism 15 is not necessarily a hollow motor.
  • a substrate rotation mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate support 141 may be used.
  • the substrate support portion 141, the rotor portion 152 of the substrate rotation mechanism 15, the weight portion 51 (or the top plate 123 that is the weight portion), and the chuck portions 4, 4a to 4d are the sealed space forming portion.
  • the processing for the substrate 9 is performed in a sealed internal space provided in a certain chamber 12, the processing for the substrate 9 may be performed in an open space depending on the design of the substrate processing apparatus.
  • the substrate processed by the substrate processing apparatus 1a is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.

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  • Weting (AREA)

Abstract

This substrate processing device is provided with: a substrate support unit (141) that supports a substrate (9) from below; a substrate rotating mechanism that rotates the substrate support unit; and a top plate (123) that opposes the top surface (91) of the substrate. The top plate is selectively disposed at a concatenation position concatenated to the substrate support unit and a separated position separated upwards from the substrate support unit by means of an opposing unit support mechanism. The substrate support unit is provided with a chuck unit (4) having a plurality of claws (41) and a transmission mechanism (42), and when the top plate is positioned at the concatenation position, the abutment sections (43) of the transmission mechanism are pressed in by means of the dead weight of the top plate. The plurality of claws of the transmission mechanism press the edges of the substrate towards the center axis by means of the force acting on the abutment sections being transmitted to the plurality of claws. As a result, the substrate is held while being positioned with respect to the center of rotation.

Description

基板処理装置Substrate processing equipment
 本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
 従来より、半導体基板(以下、単に「基板」という。)の製造工程では、基板処理装置を用いて基板に対して様々な処理が施される。例えば、表面上にレジストのパターンが形成された基板に薬液を供給することにより、基板の表面に対してエッチング等の処理が行われる。また、エッチング処理の終了後、基板上のレジストを除去したり基板を洗浄する処理も行われる。 Conventionally, in the process of manufacturing a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate using a substrate processing apparatus. For example, by supplying a chemical solution to a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. In addition, after the etching process is completed, a process of removing the resist on the substrate or cleaning the substrate is also performed.
 基板を1枚ずつ処理する枚葉式の基板処理装置では、基板が基板保持部により保持され、基板保持部を回転しつつ基板に処理液が供給される。基板保持部において基板を保持する手法として、バキュームチャック、メカニカルチャック、マグネットチャック等、様々なものが実用化されている。例えば、米国特許第6,446,643号明細書では、上下のチャンバ部材が互いに近接した位置に配置される際に基板をクランプし、上下のチャンバ部材が離間した際に基板のクランプを解除する機構が開示されている。また、特開2005-19456号公報では、基板の周囲に配置された複数の挟持部材のそれぞれを回動することにより、基板の挟持、または、挟持の解除を行う機構が開示されている。さらに、米国特許第6,485,531号明細書(文献3)では、回転ヘッドが磁気によりステータに対して非接触にて回転する装置において、ばねを有する把持部により回転ヘッドにてウエハを保持する手法が開示されている。 In a single-wafer type substrate processing apparatus that processes substrates one by one, the substrate is held by the substrate holder, and the processing liquid is supplied to the substrate while rotating the substrate holder. Various methods, such as a vacuum chuck, a mechanical chuck, and a magnet chuck, have been put to practical use as methods for holding a substrate in the substrate holder. For example, in US Pat. No. 6,446,643, the substrate is clamped when the upper and lower chamber members are positioned close to each other, and the substrate is released when the upper and lower chamber members are separated. A mechanism is disclosed. Japanese Patent Application Laid-Open No. 2005-19456 discloses a mechanism for holding a substrate or releasing the holding by rotating each of a plurality of holding members arranged around the substrate. Further, in US Pat. No. 6,485,531 (reference 3), in a device in which a rotating head rotates in a non-contact manner with respect to a stator by magnetism, a wafer is held by the rotating head by a gripping portion having a spring. A technique is disclosed.
 ところで、文献3の装置のように基板保持部を浮遊状態にて回転する場合、基板を保持するために、電気や圧縮空気等の動力源による駆動力を基板保持部に対して伝達することが困難である。文献3の装置では、ばねを有する把持部によりウエハが保持されるが、プロセスチャンバの外側にてウエハを回転ヘッドに固定し、ウエハが装着された回転ヘッドをプロセスチャンバ内に導入する煩雑な作業が必要となる。また、基板処理装置では、基板を安定して回転するため、基板を回転中心に対して位置合わせすることが重要であるが、外部の搬送機構により基板を基板処理装置内に搬入する際に、基板を回転中心に対して精度よく位置合わせすることは容易ではない。したがって、基板を回転中心に対して位置合わせしつつ保持することが可能な新規な手法が求められる。 By the way, when the substrate holder is rotated in a floating state as in the apparatus of Reference 3, in order to hold the substrate, a driving force by a power source such as electricity or compressed air can be transmitted to the substrate holder. Have difficulty. In the apparatus of Document 3, the wafer is held by a gripping part having a spring, but the complicated operation of fixing the wafer to the rotating head outside the process chamber and introducing the rotating head on which the wafer is mounted into the process chamber. Is required. In the substrate processing apparatus, in order to stably rotate the substrate, it is important to align the substrate with respect to the rotation center, but when the substrate is carried into the substrate processing apparatus by an external transport mechanism, It is not easy to accurately align the substrate with respect to the center of rotation. Therefore, there is a need for a new technique that can hold the substrate while aligning it with respect to the center of rotation.
 本発明は、基板を処理する基板処理装置に向けられており、基板を回転中心に対して位置合わせしつつ保持することを目的としている。 The present invention is directed to a substrate processing apparatus for processing a substrate, and aims to hold the substrate while aligning the substrate with respect to the center of rotation.
 本発明に係る一の基板処理装置は、基板の一方の主面である上面を上側に向けた状態で前記基板を下側から支持する基板支持部と、前記基板支持部を前記基板に垂直な中心軸を中心として回転する回転機構と、前記上面の少なくとも外縁部に対向する上面対向部と、前記上面対向部を前記基板支持部に対して上方に離間する離間位置と、前記基板支持部と連結する連結位置とに選択的に配置する対向部支持機構と、前記基板支持部または前記上面対向部の一方に設けられるチャック部とを備え、前記チャック部が、前記中心軸に沿って見た場合に、前記基板の周囲に配置される少なくとも3個の爪部と、前記上面対向部が前記連結位置に位置する際に前記基板支持部または前記上面対向部の他方により押し込まれる当接部を含み、前記当接部に作用する力を、前記少なくとも3個の爪部に伝達することにより、前記少なくとも3個の爪部に前記基板のエッジを前記中心軸に向けて押させる伝達機構とを備える。当該基板処理装置では、基板を回転中心に対して位置合わせしつつ保持することができる。 One substrate processing apparatus according to the present invention includes a substrate support portion that supports the substrate from the lower side with an upper surface that is one main surface of the substrate facing upward, and the substrate support portion that is perpendicular to the substrate. A rotation mechanism that rotates about a central axis; an upper surface facing portion that faces at least an outer edge portion of the upper surface; a separation position that separates the upper surface facing portion upward with respect to the substrate supporting portion; and the substrate supporting portion; An opposing portion supporting mechanism that is selectively disposed at a connecting position to be connected; and a chuck portion provided on one of the substrate supporting portion or the upper surface opposing portion, and the chuck portion is viewed along the central axis. In this case, at least three claw portions arranged around the substrate and a contact portion pushed by the other of the substrate support portion or the upper surface facing portion when the upper surface facing portion is located at the connection position. Including the abutment Force acting on the, by transmitting the at least three claws, and a transmission mechanism for pressing toward the edge of the substrate to the central axis to the at least three claws. In the substrate processing apparatus, the substrate can be held while being aligned with the rotation center.
 好ましくは、前記伝達機構が弾性部材を含み、前記基板支持部に支持される基板の大きさが変動する場合に、前記弾性部材が弾性変形することにより、前記連結位置における前記上面対向部と前記基板との間の距離が一定に保たれる。 Preferably, the transmission mechanism includes an elastic member, and when the size of the substrate supported by the substrate support portion varies, the elastic member elastically deforms, whereby the upper surface facing portion at the coupling position and the The distance to the substrate is kept constant.
 また、前記回転機構が、前記中心軸を中心とする環状であり、永久磁石を含むロータ部と、前記ロータ部と前記中心軸を中心とする径方向に対向する環状であり、前記ロータ部との間にて前記中心軸を中心とする回転力を発生するステータ部とを備え、前記ロータ部が前記基板支持部と接続されてもよい。 Further, the rotation mechanism is an annular shape centered on the central axis, a rotor portion including a permanent magnet, an annular shape facing the rotor portion and the radial direction centered on the central axis, and the rotor portion; And a stator portion that generates a rotational force about the central axis between the rotor portion and the substrate support portion.
 この場合に、好ましくは、基板処理装置が、前記基板に対する処理が行われる、密閉された内部空間を形成する密閉空間形成部をさらに備え、前記基板支持部、前記回転機構の前記ロータ部、前記上面対向部および前記チャック部が、前記密閉空間形成部内に配置される。より好ましくは、前記密閉空間形成部が、上部開口を有するチャンバ本体と、前記チャンバ本体の前記上部開口を閉塞するチャンバ蓋部とを備え、前記チャンバ蓋部が前記対向部支持機構の一部でもあり、前記チャンバ蓋部が前記チャンバ本体に対して相対的に昇降し、前記上面対向部が前記離間位置に位置する際に、前記上面対向部が、前記チャンバ本体の上方に位置する前記チャンバ蓋部の一部から吊り下がり、前記上面対向部が前記連結位置に位置する際に、前記上面対向部が、前記チャンバ本体に当接または近接する前記チャンバ蓋部と非接触状態である。 In this case, it is preferable that the substrate processing apparatus further includes a sealed space forming unit that forms a sealed internal space in which processing on the substrate is performed, the substrate support unit, the rotor unit of the rotating mechanism, The upper surface facing portion and the chuck portion are disposed in the sealed space forming portion. More preferably, the sealed space forming portion includes a chamber body having an upper opening and a chamber lid portion that closes the upper opening of the chamber body, and the chamber lid portion may be a part of the facing portion support mechanism. And the chamber lid part is located above the chamber body when the chamber lid part is moved up and down relative to the chamber body and the upper surface part is located at the separation position. When the upper surface facing portion is suspended from a part of the portion and the upper surface facing portion is located at the coupling position, the upper surface facing portion is in a non-contact state with the chamber lid portion that is in contact with or close to the chamber body.
 本発明に係る他の基板処理装置は、一方の主面を上側に向けた状態で基板を下側から支持する基板支持部と、前記基板支持部を前記基板に垂直な中心軸を中心として回転する回転機構と、上下方向において前記基板支持部に対して相対的に異なる位置である第1相対位置と、前記第1相対位置よりも上方の第2相対位置とに配置可能な錘部と、前記錘部を支持することにより前記錘部を前記第2相対位置に配置し、前記錘部の支持を解除することにより、前記錘部を、前記基板および前記基板支持部と共に回転するための前記第1相対位置に位置させる錘支持機構と、前記基板支持部または前記錘部に設けられるチャック部とを備え、前記チャック部が、前記中心軸に沿って見た場合に、前記基板の周囲に配置される少なくとも3個の爪部と、前記第1相対位置に位置する前記錘部の重量による力を、前記少なくとも3個の爪部に伝達することにより、前記少なくとも3個の爪部に前記基板のエッジを前記中心軸に向けて押させる伝達機構とを備える。当該基板処理装置では、基板を回転中心に対して位置合わせしつつ保持することができる。 Another substrate processing apparatus according to the present invention includes a substrate support portion that supports a substrate from below with one main surface facing upward, and the substrate support portion that rotates about a central axis perpendicular to the substrate. A rotating mechanism, a first relative position that is relatively different from the substrate support part in the vertical direction, and a weight part that can be arranged at a second relative position above the first relative position; The weight part is disposed at the second relative position by supporting the weight part, and the weight part is rotated together with the substrate and the substrate support part by releasing the support of the weight part. A weight support mechanism positioned at a first relative position; and a chuck portion provided on the substrate support portion or the weight portion, and the chuck portion is disposed around the substrate when viewed along the central axis. At least three claws to be arranged The force due to the weight of the weight portion located at the first relative position is transmitted to the at least three claw portions, so that the edge of the substrate is directed to the central axis at the at least three claw portions. A transmission mechanism to be pushed. In the substrate processing apparatus, the substrate can be held while being aligned with the rotation center.
 好ましくは、前記回転機構が、前記中心軸を中心とする環状であり、永久磁石を含むロータ部と、前記ロータ部と前記中心軸を中心とする径方向に対向する環状であり、前記ロータ部との間にて前記中心軸を中心とする回転力を発生するステータ部とを備え、前記ロータ部が前記基板支持部と接続される。より好ましくは、前記錘部が前記基板支持部と、前記基板支持部の下方に配置された前記ロータ部との間に配置され、前記基板支持部と前記ロータ部とを接続するガイド部に沿って前記上下方向に移動可能であり、前記チャック部が、前記基板支持部に設けられる。 Preferably, the rotating mechanism has an annular shape centered on the central axis, a rotor portion including a permanent magnet, and an annularly opposed annular shape centering on the rotor portion and the central axis, and the rotor portion And a stator part that generates a rotational force about the central axis between the rotor part and the substrate support part. More preferably, the weight portion is disposed between the substrate support portion and the rotor portion disposed below the substrate support portion, and extends along a guide portion that connects the substrate support portion and the rotor portion. The chuck portion is provided on the substrate support portion.
 この場合に、一の局面では、前記基板支持部および前記錘部が前記中心軸を中心とする環状である。他の局面では、前記錘支持機構による支持が解除された際の前記錘部の位置が、前記錘支持機構により支持された際の前記錘部の位置よりも、前記ロータ部に近接する。 In this case, in one aspect, the substrate support portion and the weight portion are annular around the central axis. In another aspect, the position of the weight part when the support by the weight support mechanism is released is closer to the rotor part than the position of the weight part when supported by the weight support mechanism.
 上述の目的および他の目的、特徴、態様および利点は、添付した図面を参照して以下に行うこの発明の詳細な説明により明らかにされる。 The above object and other objects, features, aspects, and advantages will become apparent from the following detailed description of the present invention with reference to the accompanying drawings.
第1の実施の形態に係る基板処理装置を示す断面図である。It is sectional drawing which shows the substrate processing apparatus which concerns on 1st Embodiment. 気液供給部および気液排出部を示すブロック図である。It is a block diagram which shows a gas-liquid supply part and a gas-liquid discharge part. チャック部の構成を示す図である。It is a figure which shows the structure of a chuck | zipper part. 基板処理装置における基板の処理の流れを示す図である。It is a figure which shows the flow of a process of the board | substrate in a substrate processing apparatus. 基板処理装置を示す断面図である。It is sectional drawing which shows a substrate processing apparatus. チャック部およびトッププレートを示す図である。It is a figure which shows a chuck | zipper part and a top plate. 基板処理装置を示す断面図である。It is sectional drawing which shows a substrate processing apparatus. 比較例の基板処理装置における基板保持部近傍を示す断面図である。It is sectional drawing which shows the board | substrate holding part vicinity in the substrate processing apparatus of a comparative example. チャック部の他の例を示す図である。It is a figure which shows the other example of a chuck | zipper part. 当接部および複数のシャフトを示す斜視図である。It is a perspective view which shows a contact part and a some shaft. 爪部を示す平面図である。It is a top view which shows a nail | claw part. チャック部のさらに他の例を示す図である。It is a figure which shows the further another example of a chuck | zipper part. トッププレート移動機構の構成を示す図である。It is a figure which shows the structure of a top plate moving mechanism. 第2の実施の形態に係る基板処理装置を示す断面図である。It is sectional drawing which shows the substrate processing apparatus which concerns on 2nd Embodiment. チャック部および錘支持機構の構成を示す図である。It is a figure which shows the structure of a chuck | zipper part and a weight support mechanism. チャック部および錘支持機構の動作を説明するための図である。It is a figure for demonstrating operation | movement of a chuck | zipper part and a weight support mechanism. 基板処理装置を示す断面図である。It is sectional drawing which shows a substrate processing apparatus. 基板処理装置を示す断面図である。It is sectional drawing which shows a substrate processing apparatus. チャック部の他の例を示す図である。It is a figure which shows the other example of a chuck | zipper part. 連結部および複数のシャフトを示す斜視図である。It is a perspective view which shows a connection part and a some shaft. 爪部を示す平面図である。It is a top view which shows a nail | claw part. 錘支持機構の他の例を示す図である。It is a figure which shows the other example of the weight support mechanism. 錘支持機構および連結部の他の例を示す図である。It is a figure which shows the other example of a weight support mechanism and a connection part. 第3の実施の形態に係るチャック部の構成を示す図である。It is a figure which shows the structure of the chuck | zipper part which concerns on 3rd Embodiment. チャック部およびトッププレートを示す図である。It is a figure which shows a chuck | zipper part and a top plate. チャック部の他の例を示す図である。It is a figure which shows the other example of a chuck | zipper part. チャック部の他の例を示す図である。It is a figure which shows the other example of a chuck | zipper part.
 図1は、本発明の第1の実施の形態に係る基板処理装置1を示す断面図である。基板処理装置1は、略円板状の半導体基板9(以下、単に「基板9」という。)に処理液を供給して基板9を1枚ずつ処理する枚葉式の装置である。図1では、基板処理装置1の一部の構成の断面に対する平行斜線の付与を省略している(他の断面図においても同様)。 FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the application of parallel oblique lines to the cross section of a part of the configuration of the substrate processing apparatus 1 is omitted (the same applies to other cross sectional views).
 基板処理装置1は、チャンバ12と、トッププレート123と、チャンバ開閉機構131と、基板保持部14と、基板回転機構15と、液受け部16と、カバー17とを備える。カバー17は、チャンバ12の上方および側方を覆う。 The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening / closing mechanism 131, a substrate holding unit 14, a substrate rotating mechanism 15, a liquid receiving unit 16, and a cover 17. The cover 17 covers the upper side and the side of the chamber 12.
 チャンバ12は、チャンバ本体121と、チャンバ蓋部122とを備える。チャンバ12は、上下方向を向く中心軸J1を中心とする有蓋および有底の略円筒状である。チャンバ本体121は、チャンバ底部210と、チャンバ側壁部214とを備える。チャンバ底部210は、略円板状の中央部211と、中央部211の外縁部から下方へと広がる略円筒状の内側壁部212と、内側壁部212の下端から径方向外方へと広がる略円環板状の環状底部213と、環状底部213の外縁部から上方へと広がる略円筒状の外側壁部215と、外側壁部215の上端部から径方向外方へと広がる略円環板状のベース部216とを備える。 The chamber 12 includes a chamber main body 121 and a chamber lid portion 122. The chamber 12 has a substantially cylindrical shape with a lid and a bottom with a central axis J1 facing in the vertical direction as a center. The chamber main body 121 includes a chamber bottom portion 210 and a chamber side wall portion 214. The chamber bottom portion 210 has a substantially disc-shaped central portion 211, a substantially cylindrical inner wall portion 212 extending downward from the outer edge portion of the central portion 211, and a radially outer side from the lower end of the inner wall portion 212. A substantially annular plate-like annular bottom 213, a substantially cylindrical outer wall 215 extending upward from the outer edge of the annular bottom 213, and a substantially annular ring extending radially outward from the upper end of the outer wall 215 And a plate-like base portion 216.
 チャンバ側壁部214は、中心軸J1を中心とする環状である。チャンバ側壁部214は、ベース部216の内縁部から上方へと突出する。チャンバ側壁部214を形成する部材は、後述するように、液受け部16の一部を兼ねる。以下の説明では、チャンバ側壁部214と外側壁部215と環状底部213と内側壁部212と中央部211の外縁部とに囲まれた空間を下部環状空間217という。 The chamber side wall 214 has an annular shape centering on the central axis J1. The chamber side wall portion 214 projects upward from the inner edge portion of the base portion 216. A member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as described later. In the following description, a space surrounded by the chamber side wall part 214, the outer wall part 215, the annular bottom part 213, the inner wall part 212, and the outer edge part of the central part 211 is referred to as a lower annular space 217.
 基板保持部14の基板支持部141(後述)に基板9が支持された場合、基板9の下面92は、チャンバ底部210の中央部211の上面と対向する。以下の説明では、チャンバ底部210の中央部211を「下面対向部211」と呼ぶ。 When the substrate 9 is supported by a substrate support portion 141 (described later) of the substrate holding portion 14, the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210. In the following description, the central portion 211 of the chamber bottom 210 is referred to as a “lower surface facing portion 211”.
 チャンバ蓋部122は中心軸J1に垂直な略円板状であり、チャンバ12の上部を含む。チャンバ蓋部122は、チャンバ本体121の上部開口を閉塞する。図1では、チャンバ蓋部122がチャンバ本体121から離間した状態を示す。チャンバ蓋部122がチャンバ本体121の上部開口を閉塞する際には、チャンバ蓋部122の外縁部がチャンバ側壁部214の上部と接する。 The chamber lid part 122 has a substantially disc shape perpendicular to the central axis J1 and includes the upper part of the chamber 12. The chamber lid 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state where the chamber lid 122 is separated from the chamber main body 121. When the chamber lid 122 closes the upper opening of the chamber main body 121, the outer edge of the chamber lid 122 contacts the upper portion of the chamber side wall 214.
 チャンバ開閉機構131は、チャンバ12の可動部であるチャンバ蓋部122を、チャンバ12の他の部位であるチャンバ本体121に対して上下方向に相対的に移動する。チャンバ開閉機構131は、チャンバ蓋部122を昇降する蓋部昇降機構である。チャンバ開閉機構131によりチャンバ蓋部122が上下方向に移動する際には、トッププレート123もチャンバ蓋部122と共に上下方向に移動する。チャンバ蓋部122がチャンバ本体121と接して上部開口を閉塞し、さらに、チャンバ蓋部122がチャンバ本体121に向かって押圧されることにより、チャンバ12内に密閉された内部空間であるチャンバ空間120(図7参照)が形成される。換言すれば、チャンバ蓋部122によりチャンバ本体121の上部開口が閉塞されることより、チャンバ空間120が密閉される。チャンバ蓋部122およびチャンバ本体121は、チャンバ空間120を形成する密閉空間形成部である。 The chamber opening / closing mechanism 131 moves the chamber lid 122, which is a movable part of the chamber 12, relative to the chamber body 121, which is another part of the chamber 12, in the vertical direction. The chamber opening / closing mechanism 131 is a lid raising / lowering mechanism that raises / lowers the chamber lid 122. When the chamber lid 122 moves in the vertical direction by the chamber opening / closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber lid 122. The chamber lid 122 is in contact with the chamber main body 121 to close the upper opening, and the chamber lid 122 is pressed toward the chamber main body 121, whereby the chamber space 120 which is an internal space sealed in the chamber 12. (See FIG. 7) is formed. In other words, the chamber space 120 is sealed by closing the upper opening of the chamber body 121 by the chamber lid 122. The chamber lid part 122 and the chamber body 121 are sealed space forming parts that form the chamber space 120.
 基板保持部14は、チャンバ空間120に配置され、基板9を水平状態で保持する。すなわち、基板9は、微細パターンが形成された一方の主面91(以下、「上面91」という。)が中心軸J1に垂直に上側を向く状態で基板保持部14により保持される。基板保持部14は、上述の基板支持部141と、基板支持部141に設けられるチャック部4とを備える。基板支持部141は、中心軸J1を中心とする略円環状である。基板支持部141は、中心軸J1を中心とする略円環板状の支持部ベース142と、支持部ベース142上にて周方向に配列される複数の支持ピン144とを備える。複数の支持ピン144により、基板9の外縁部(すなわち、外周縁を含む外周縁近傍の部位)が下側から支持される。チャック部4は、複数の爪部41を備える。複数の爪部41は、中心軸J1に沿って見た場合に基板9の周囲に配置される。チャック部4の構造の詳細については後述する。 The substrate holding unit 14 is disposed in the chamber space 120 and holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding unit 14 in a state where one main surface 91 (hereinafter referred to as “upper surface 91”) on which a fine pattern is formed faces upwards perpendicularly to the central axis J1. The substrate holding unit 14 includes the above-described substrate support unit 141 and the chuck unit 4 provided on the substrate support unit 141. The substrate support portion 141 has a substantially annular shape centered on the central axis J1. The substrate support portion 141 includes a substantially annular plate-like support portion base 142 centered on the central axis J <b> 1 and a plurality of support pins 144 arranged on the support portion base 142 in the circumferential direction. The plurality of support pins 144 support the outer edge portion of the substrate 9 (that is, a portion near the outer periphery including the outer periphery) from below. The chuck portion 4 includes a plurality of claw portions 41. The plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1. Details of the structure of the chuck portion 4 will be described later.
 トッププレート123は、中心軸J1に垂直な略円板状である。トッププレート123は、チャンバ蓋部122の下方、かつ、基板支持部141の上方に配置される。トッププレート123は中央に開口を有する。基板9が基板支持部141に支持されると、基板9の上面91は、中心軸J1に垂直なトッププレート123の下面と対向する。すなわち、トッププレート123は、基板9の上面91と対向する上面対向部である。トッププレート123の直径は、基板9の直径よりも大きく、トッププレート123の外周縁は、基板9の外周縁よりも全周に亘って径方向外側に位置する。トッププレート123の外縁部の下面には、複数の係合部241が周方向に配列される。各係合部241の下部には上方に向かって窪む凹部が設けられる。 The top plate 123 has a substantially disc shape perpendicular to the central axis J1. The top plate 123 is disposed below the chamber lid part 122 and above the substrate support part 141. The top plate 123 has an opening at the center. When the substrate 9 is supported by the substrate support portion 141, the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123 perpendicular to the central axis J1. That is, the top plate 123 is an upper surface facing portion that faces the upper surface 91 of the substrate 9. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer peripheral edge of the top plate 123 is located on the outer side in the radial direction over the entire periphery of the outer peripheral edge of the substrate 9. A plurality of engaging portions 241 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123. A concave portion that is recessed upward is provided at the lower portion of each engaging portion 241.
 図1に示す状態において、トッププレート123は、チャンバ蓋部122により吊り下げられるように支持される。詳細には、チャンバ蓋部122は、中央部に略環状のプレート支持部222を有する。プレート支持部222は、中心軸J1を中心とする略円筒状の筒部223と、中心軸J1を中心とする略円環状のフランジ部224とを備える。フランジ部224は、筒部223の下端から径方向内方へと広がる。 In the state shown in FIG. 1, the top plate 123 is supported so as to be suspended by the chamber lid 122. Specifically, the chamber lid 122 has a substantially annular plate support 222 at the center. The plate support part 222 includes a substantially cylindrical tube part 223 centered on the central axis J1 and a substantially annular flange part 224 centered on the central axis J1. The flange part 224 spreads radially inward from the lower end of the cylindrical part 223.
 トッププレート123は、環状の被支持部237を備える。被支持部237は、中心軸J1を中心とする略円筒状の筒部238と、中心軸J1を中心とする略円環状のフランジ部239とを備える。筒部238は、トッププレート123の上面から上方に広がる。フランジ部239は、筒部238の上端から径方向外方へと広がる。筒部238は、プレート支持部222の筒部223の径方向内側に位置する。フランジ部239は、プレート支持部222のフランジ部224の上方に位置し、フランジ部224と上下方向に対向する。被支持部237のフランジ部239の下面が、プレート支持部222のフランジ部224の上面に接することにより、トッププレート123が、チャンバ蓋部122から吊り下がるようにチャンバ蓋部122に取り付けられる。 The top plate 123 includes an annular supported portion 237. The supported portion 237 includes a substantially cylindrical tube portion 238 centered on the central axis J1 and a substantially annular flange portion 239 centered on the central axis J1. The cylinder portion 238 extends upward from the upper surface of the top plate 123. The flange portion 239 extends outward from the upper end of the cylindrical portion 238 in the radial direction. The cylindrical portion 238 is located on the radially inner side of the cylindrical portion 223 of the plate support portion 222. The flange part 239 is located above the flange part 224 of the plate support part 222 and faces the flange part 224 in the vertical direction. When the lower surface of the flange portion 239 of the supported portion 237 is in contact with the upper surface of the flange portion 224 of the plate support portion 222, the top plate 123 is attached to the chamber lid portion 122 so as to be suspended from the chamber lid portion 122.
 基板処理装置1では、チャンバ蓋部122がチャンバ本体121から上方に離間した状態において、チャンバ蓋部122のプレート支持部222がトッププレート123を支持することにより、トッププレート123が基板支持部141に対して上方に離間する位置(以下、「離間位置」という。)に配置される。実際には、チャンバ蓋部122はチャンバ開閉機構131により支持されており、実質的には、チャンバ開閉機構131およびチャンバ蓋部122が、上面対向部であるトッププレート123を支持する対向部支持機構である。 In the substrate processing apparatus 1, the plate support part 222 of the chamber cover part 122 supports the top plate 123 in a state where the chamber cover part 122 is spaced upward from the chamber body 121, so that the top plate 123 is supported by the substrate support part 141. On the other hand, they are arranged at positions that are spaced apart upward (hereinafter referred to as “separated positions”). Actually, the chamber cover 122 is supported by a chamber opening / closing mechanism 131, and the chamber opening / closing mechanism 131 and the chamber cover 122 substantially support the top plate 123 that is the upper surface facing portion. It is.
 基板回転機構15は、いわゆる中空モータである。基板回転機構15は、中心軸J1を中心とする環状のステータ部151と、環状のロータ部152とを備える。ロータ部152は、略円環状の永久磁石を含む。永久磁石の表面は、PTFE樹脂にてモールドされる。ロータ部152は、チャンバ12内において下部環状空間217内に配置される。ロータ部152の上部には、接続部材を介して基板支持部141の支持部ベース142が接続される。支持部ベース142は、ロータ部152の上方に配置される。 The substrate rotation mechanism 15 is a so-called hollow motor. The substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin. The rotor portion 152 is disposed in the lower annular space 217 in the chamber 12. The support portion base 142 of the substrate support portion 141 is connected to the upper portion of the rotor portion 152 via a connection member. The support portion base 142 is disposed above the rotor portion 152.
 ステータ部151は、チャンバ12外においてロータ部152の周囲、すなわち、中心軸J1を中心とする径方向の外側に配置される。本実施の形態では、ステータ部151は、チャンバ底部210の外側壁部215およびベース部216に固定され、液受け部16の下方に位置する。ステータ部151は、中心軸J1を中心とする周方向に配列された複数のコイルを含む。 The stator portion 151 is disposed outside the chamber 12 and around the rotor portion 152, that is, outside in the radial direction with the central axis J1 as the center. In the present embodiment, the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is positioned below the liquid receiving portion 16. Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.
 ステータ部151に電流が供給されることにより、ステータ部151とロータ部152との間に、中心軸J1を中心とする回転力が発生する。これにより、ロータ部152が、中心軸J1を中心として水平状態で回転する。ステータ部151とロータ部152との間に働く磁力により、ロータ部152は、チャンバ12内において直接的にも間接的にもチャンバ12に接触することなく浮遊し、中心軸J1を中心として基板9を基板支持部141と共に浮遊状態にて回転する。このように、ロータ部152を含む回転体は、回転しない他の部材と非接触状態にて回転する。 When a current is supplied to the stator portion 151, a rotational force about the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor part 152 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in the chamber 12 without contacting the chamber 12 directly or indirectly, and the substrate 9 is centered on the central axis J1. Are rotated together with the substrate support 141 in a floating state. Thus, the rotating body including the rotor portion 152 rotates in a non-contact state with other members that do not rotate.
 液受け部16は、カップ部161と、カップ部移動機構162と、カップ対向部163とを備える。カップ部161は中心軸J1を中心とする環状であり、チャンバ12の径方向外側に全周に亘って位置する。カップ部移動機構162はカップ部161を上下方向に移動する。カップ部移動機構162は、カップ部161の径方向外側に配置される。カップ部移動機構162は、上述のチャンバ開閉機構131と周方向に異なる位置に配置される。カップ対向部163は、カップ部161の下方に位置し、カップ部161と上下方向に対向する。カップ対向部163は、チャンバ側壁部214を形成する部材の一部である。カップ対向部163は、チャンバ側壁部214の径方向外側に位置する環状の液受け凹部165を有する。 The liquid receiving part 16 includes a cup part 161, a cup part moving mechanism 162, and a cup facing part 163. The cup portion 161 has an annular shape centered on the central axis J <b> 1, and is located on the entire outer circumference in the radial direction of the chamber 12. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction. The cup part moving mechanism 162 is disposed on the radially outer side of the cup part 161. The cup moving mechanism 162 is arranged at a position different from the chamber opening / closing mechanism 131 in the circumferential direction. The cup facing part 163 is located below the cup part 161 and faces the cup part 161 in the vertical direction. The cup facing portion 163 is a part of a member that forms the chamber side wall portion 214. The cup facing portion 163 has an annular liquid receiving recess 165 positioned on the radially outer side of the chamber side wall portion 214.
 カップ部161は、側壁部611と、上面部612と、ベローズ617とを備える。側壁部611は、中心軸J1を中心とする略円筒状である。上面部612は、中心軸J1を中心とする略円環板状であり、側壁部611の上端部から径方向内方および径方向外方へと広がる。側壁部611の下部は、カップ対向部163の液受け凹部165内に位置する。 The cup part 161 includes a side wall part 611, an upper surface part 612, and a bellows 617. The side wall portion 611 has a substantially cylindrical shape centered on the central axis J1. The upper surface portion 612 has a substantially annular plate shape centered on the central axis J1, and extends from the upper end portion of the side wall portion 611 radially inward and radially outward. The lower part of the side wall part 611 is located in the liquid receiving recessed part 165 of the cup facing part 163.
 ベローズ617は、中心軸J1を中心とする略円筒状であり、上下方向に伸縮可能である。ベローズ617は、側壁部611の径方向外側において、側壁部611の周囲に全周に亘って設けられる。ベローズ617は、気体や液体を通過させない材料にて形成される。ベローズ617の上端部は、上面部612の外縁部の下面に全周に亘って接続される。換言すれば、ベローズ617の上端部は、上面部612を介して側壁部611に間接的に接続される。ベローズ617と上面部612との接続部はシールされており、気体や液体の通過が防止される。ベローズ617の下端部は、カップ対向部163を介してチャンバ本体121に間接的に接続される。ベローズ617の下端部とカップ対向部163との接続部でも、気体や液体の通過が防止される。 The bellows 617 has a substantially cylindrical shape centered on the central axis J1, and can be expanded and contracted in the vertical direction. The bellows 617 is provided over the entire circumference around the side wall 611 outside the side wall 611 in the radial direction. The bellows 617 is formed of a material that does not allow gas or liquid to pass through. The upper end portion of the bellows 617 is connected to the lower surface of the outer edge portion of the upper surface portion 612 over the entire circumference. In other words, the upper end portion of the bellows 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612. The connection portion between the bellows 617 and the upper surface portion 612 is sealed, and passage of gas or liquid is prevented. A lower end portion of the bellows 617 is indirectly connected to the chamber body 121 via the cup facing portion 163. Even at the connecting portion between the lower end portion of the bellows 617 and the cup facing portion 163, the passage of gas or liquid is prevented.
 チャンバ蓋部122の中央には、中心軸J1を中心とする略円柱状の上部ノズル181が取り付けられる。上部ノズル181は、基板9の上面91の中央部に対向してチャンバ蓋部122に固定される。上部ノズル181は、トッププレート123の中央の開口に挿入可能である。チャンバ底部210の下面対向部211の中央には、下部ノズル182が取り付けられる。下部ノズル182は、基板9の下面92の中央部と対向する。下面対向部211には、複数の加熱ガス供給ノズル180がさらに取り付けられる。複数の加熱ガス供給ノズル180は、例えば、中心軸J1を中心とする周方向に等角度間隔にて配置される。 At the center of the chamber lid portion 122, a substantially columnar upper nozzle 181 centering on the central axis J1 is attached. The upper nozzle 181 is fixed to the chamber lid 122 so as to face the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 can be inserted into the central opening of the top plate 123. A lower nozzle 182 is attached to the center of the lower surface facing portion 211 of the chamber bottom portion 210. The lower nozzle 182 faces the center of the lower surface 92 of the substrate 9. A plurality of heated gas supply nozzles 180 are further attached to the lower surface facing portion 211. The plurality of heated gas supply nozzles 180 are arranged at, for example, equiangular intervals in the circumferential direction around the central axis J1.
 図2は、基板処理装置1が備える気液供給部18および気液排出部19を示すブロック図である。気液供給部18は、上述の加熱ガス供給ノズル180、上部ノズル181および下部ノズル182に加えて、薬液供給部183と、純水供給部184と、IPA供給部185と、不活性ガス供給部186と、加熱ガス供給部187とを備える。薬液供給部183、純水供給部184およびIPA供給部185は、それぞれ弁を介して上部ノズル181に接続される。下部ノズル182は、弁を介して純水供給部184に接続される。上部ノズル181は、弁を介して不活性ガス供給部186にも接続される。上部ノズル181は中央に液吐出口を有し、その周囲にガス噴出口を有する。したがって、正確には、上部ノズル181の一部はチャンバ12の内部にガスを供給する広義のガス供給部の一部である。下部ノズル182は中央に液吐出口を有する。複数の加熱ガス供給ノズル180は、弁を介して加熱ガス供給部187に接続される。 FIG. 2 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 provided in the substrate processing apparatus 1. The gas-liquid supply unit 18 includes a chemical solution supply unit 183, a pure water supply unit 184, an IPA supply unit 185, and an inert gas supply unit in addition to the heating gas supply nozzle 180, the upper nozzle 181 and the lower nozzle 182 described above. 186 and a heated gas supply unit 187. The chemical solution supply unit 183, the pure water supply unit 184, and the IPA supply unit 185 are each connected to the upper nozzle 181 through a valve. The lower nozzle 182 is connected to the pure water supply unit 184 via a valve. The upper nozzle 181 is also connected to an inert gas supply unit 186 through a valve. The upper nozzle 181 has a liquid discharge port in the center and a gas jet port around it. Therefore, precisely, a part of the upper nozzle 181 is a part of a broad gas supply part that supplies gas into the chamber 12. The lower nozzle 182 has a liquid discharge port in the center. The plurality of heating gas supply nozzles 180 are connected to the heating gas supply unit 187 via valves.
 液受け部16の液受け凹部165に接続される第1排出路191は、気液分離部193に接続される。気液分離部193は、外側排気部194、薬液回収部195および排液部196にそれぞれ弁を介して接続される。チャンバ12のチャンバ底部210に接続される第2排出路192は、気液分離部197に接続される。気液分離部197は、内側排気部198および排液部199にそれぞれ弁を介して接続される。気液供給部18および気液排出部19の各構成は、制御部10により制御される。チャンバ開閉機構131、基板回転機構15およびカップ部移動機構162(図1参照)も制御部10により制御される。 The first discharge path 191 connected to the liquid receiving recess 165 of the liquid receiving unit 16 is connected to the gas-liquid separation unit 193. The gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical solution recovery unit 195, and the drainage unit 196 through valves. The second discharge path 192 connected to the chamber bottom 210 of the chamber 12 is connected to the gas-liquid separator 197. The gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the drainage unit 199 via valves. Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10. The chamber opening / closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.
 本実施の形態では、薬液供給部183から上部ノズル181を介して基板9上に供給される薬液は、フッ酸や水酸化テトラメチルアンモニウム水溶液等のエッチング液である。純水供給部184は、上部ノズル181または下部ノズル182を介して基板9に純水(DIW:Deionized Water)を供給する。IPA供給部185は、上部ノズル181を介して基板9上にイソプロピルアルコール(IPA)を供給する。基板処理装置1では、上記以外の処理液を供給する処理液供給部が設けられてもよい。 In this embodiment, the chemical solution supplied from the chemical solution supply unit 183 to the substrate 9 via the upper nozzle 181 is an etching solution such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution. The pure water supply unit 184 supplies pure water (DIW: Deionized Water) to the substrate 9 via the upper nozzle 181 or the lower nozzle 182. The IPA supply unit 185 supplies isopropyl alcohol (IPA) onto the substrate 9 through the upper nozzle 181. In the substrate processing apparatus 1, a processing liquid supply unit that supplies a processing liquid other than the above may be provided.
 また、不活性ガス供給部186は、上部ノズル181を介してチャンバ12内に不活性ガスを供給する。加熱ガス供給部187は、複数の加熱ガス供給ノズル180を介して基板9の下面92に加熱したガス(例えば、120~130℃に加熱した高温の不活性ガス)を供給する。本実施の形態では、不活性ガス供給部186および加熱ガス供給部187にて利用されるガスは窒素(N)ガスであるが、窒素ガス以外であってもよい。 Further, the inert gas supply unit 186 supplies an inert gas into the chamber 12 via the upper nozzle 181. The heated gas supply unit 187 supplies a heated gas (for example, a high-temperature inert gas heated to 120 to 130 ° C.) to the lower surface 92 of the substrate 9 through the plurality of heated gas supply nozzles 180. In the present embodiment, the gas used in the inert gas supply unit 186 and the heating gas supply unit 187 is nitrogen (N 2 ) gas, but may be other than nitrogen gas.
 図3は、チャック部4の一部の構成を示す図である。既述のように、チャック部4は基板支持部141に設けられ、チャック部4の一部は、中心軸J1を中心とする円環状の支持部ベース142の内部に設けられる。図3では、支持部ベース142、および、後述の当接部収容部431内の構成の一部については、中心軸J1を含む面による断面を示している(図6および図9において同様)。チャック部4は、既述の複数の爪部41と、伝達機構42とを備える。既述のように、複数の爪部41は、複数の支持ピン144により支持された基板9の周囲にて周方向に配列される。複数の爪部41の個数は少なくとも3個であり、当該少なくとも3個の爪部41のうち周方向に隣接する2つの爪部41の各組合せでは、当該2つの爪部41と中心軸J1とを結ぶ線がなす角度は180度未満である。当該少なくとも3個の爪部41は、周方向に等角度間隔にて設けられることが好ましい。本実施の形態では、4個の爪部41が周方向に等角度間隔にて設けられる。 FIG. 3 is a diagram showing a configuration of a part of the chuck portion 4. As described above, the chuck portion 4 is provided on the substrate support portion 141, and a part of the chuck portion 4 is provided inside an annular support portion base 142 centered on the central axis J <b> 1. In FIG. 3, a part of the configuration within the support portion base 142 and the contact portion accommodating portion 431 described later is shown in a cross section by a plane including the central axis J1 (the same applies to FIGS. 6 and 9). The chuck portion 4 includes the plurality of claw portions 41 and the transmission mechanism 42 described above. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144. The number of the plurality of claw portions 41 is at least 3, and in each combination of two claw portions 41 adjacent in the circumferential direction among the at least three claw portions 41, the two claw portions 41 and the central axis J1 The angle formed by the line connecting the two is less than 180 degrees. The at least three claw portions 41 are preferably provided at equiangular intervals in the circumferential direction. In the present embodiment, four claw portions 41 are provided at equiangular intervals in the circumferential direction.
 伝達機構42は、各爪部41に対して設けられる当接部43および複数のバー44,45を備える。当接部43は、上下方向に伸びる棒部材であり、支持部ベース142の上面上に設けられた当接部収容部431内に一部が配置される。当接部収容部431内には、円環状の上側支持部432および下側支持部433が設けられており、上側および下側支持部432,433により当接部43が上下方向に移動可能に支持される。当接部43の下端部は、支持部ベース142に形成された内部空間143に配置される。当該内部空間143にはバー44が配置され、バー44の一方の端部が当接部43の下端部にピン421を介して接続される。バー44には、バー44の長手方向に伸びる長孔441が形成され、ピン421は、長孔441に挿入される。バー44は、内部空間143に設けられたバー支持部440により、図3の紙面に垂直な回転軸を中心として回転可能に支持される。 The transmission mechanism 42 includes a contact portion 43 provided for each claw portion 41 and a plurality of bars 44 and 45. The contact portion 43 is a bar member extending in the vertical direction, and a part thereof is disposed in the contact portion accommodating portion 431 provided on the upper surface of the support portion base 142. An annular upper support portion 432 and a lower support portion 433 are provided in the contact portion accommodating portion 431, and the contact portion 43 is movable in the vertical direction by the upper and lower support portions 432 and 433. Supported. A lower end portion of the contact portion 43 is disposed in an internal space 143 formed in the support portion base 142. A bar 44 is disposed in the internal space 143, and one end portion of the bar 44 is connected to the lower end portion of the contact portion 43 via a pin 421. A long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441. The bar 44 is supported by a bar support portion 440 provided in the internal space 143 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
 バー44の他方の端部は、上下方向におよそ沿うもう1つのバー45の下端部にピン422を介して接続される。バー45には、バー45の長手方向に伸びる長孔451が形成され、ピン422は、長孔451に挿入される。支持部ベース142の上面には、内部空間143と連絡する連絡孔145が設けられ、バー45は連絡孔145に挿入される。バー45は、連絡孔145の周囲に固定されたバー支持部450により、図3の紙面に垂直な回転軸を中心として回転可能に支持される。バー45において、バー支持部450よりも上側の部分は支持部ベース142の内部空間143の外側に配置され、その周囲が略筒状のベローズ423により覆われる。バー45の上端部には爪部41が取り付けられる。ベローズ423は、気体や液体を通過させない材料にて形成される。ベローズ423と爪部41との接続部、ベローズ423とバー支持部450との接続部、バー支持部450と支持部ベース142との接続部、並びに、当接部収容部431と支持部ベース142との接続部はシールされており、気体や液体の通過が防止される。 The other end of the bar 44 is connected via a pin 422 to the lower end of another bar 45 that extends approximately in the vertical direction. A long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451. A communication hole 145 that communicates with the internal space 143 is provided on the upper surface of the support base 142, and the bar 45 is inserted into the communication hole 145. The bar 45 is supported by a bar support portion 450 fixed around the communication hole 145 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG. In the bar 45, a portion above the bar support portion 450 is disposed outside the internal space 143 of the support portion base 142, and the periphery thereof is covered with a substantially cylindrical bellows 423. A claw portion 41 is attached to the upper end portion of the bar 45. The bellows 423 is formed of a material that does not allow the passage of gas or liquid. A connection part between the bellows 423 and the claw part 41, a connection part between the bellows 423 and the bar support part 450, a connection part between the bar support part 450 and the support part base 142, and the contact part accommodating part 431 and the support part base 142. The connection part is sealed and the passage of gas or liquid is prevented.
 当接部43には、当接部43を中心とする円板部434が取り付けられる。円板部434は、当接部収容部431内において上側支持部432と下側支持部433との間に配置される。円板部434と下側支持部433との間には、当接部43の周囲を囲むばね435が設けられる。ばね435により、円板部434および当接部43が上方に付勢され、図3のように円板部434が上側支持部432の下面と当接する。円板部434が上側支持部432の下面と当接する状態では、バー44のバー45側の端部が、当接部43側の端部よりも下側に位置し、バー45が上下方向に沿っておよそ直立する。これにより、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間した位置に配置される。当接部43の一部(全部であってもよい。)には、ゴム等にて形成される弾性部材436が設けられ、当接部43が長手方向に僅かに伸縮可能である。伝達機構42が含む上記構成は、複数の爪部41のそれぞれに対して設けられる。 A disc portion 434 centered on the contact portion 43 is attached to the contact portion 43. The disc part 434 is disposed between the upper support part 432 and the lower support part 433 in the contact part accommodating part 431. Between the disc part 434 and the lower side support part 433, the spring 435 surrounding the circumference | surroundings of the contact part 43 is provided. The disk portion 434 and the contact portion 43 are urged upward by the spring 435, and the disk portion 434 contacts the lower surface of the upper support portion 432 as shown in FIG. In a state in which the disc portion 434 is in contact with the lower surface of the upper support portion 432, the end portion of the bar 44 on the bar 45 side is positioned below the end portion on the contact portion 43 side, and the bar 45 is in the vertical direction. Approximately upright along. Thereby, the nail | claw part 41 is arrange | positioned in the position spaced apart from the edge of the board | substrate 9 on the outer side (on the opposite side to the central axis J1). An elastic member 436 formed of rubber or the like is provided on a part (or all) of the contact portion 43, and the contact portion 43 can be slightly expanded and contracted in the longitudinal direction. The configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41.
 図4は、基板処理装置1における基板9の処理の流れを示す図である。基板処理装置1では、図1に示すように、チャンバ蓋部122がチャンバ本体121から離間して上方に位置し、カップ部161がチャンバ蓋部122から離間して下方に位置する状態にて、基板9が外部の搬送機構によりチャンバ12内に搬入され、基板支持部141により下側から支持される(ステップS10)。以下、図1に示すチャンバ12およびカップ部161の状態を「オープン状態」と呼ぶ。チャンバ蓋部122とチャンバ側壁部214との間の開口は、中心軸J1を中心とする環状であり、以下、「環状開口81」という。基板処理装置1では、チャンバ蓋部122がチャンバ本体121から離間することにより、基板9の周囲(すなわち、径方向外側)に環状開口81が形成される。ステップS10では、基板9は環状開口81を介して搬入される。 FIG. 4 is a diagram showing the flow of processing of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 1, in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and located above, and the cup part 161 is separated from the chamber lid part 122 and located below. The substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support 141 (step S10). Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 1 is referred to as an “open state”. The opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”. In the substrate processing apparatus 1, the chamber lid 122 is separated from the chamber main body 121, whereby an annular opening 81 is formed around the substrate 9 (that is, radially outside). In step S <b> 10, the substrate 9 is carried in via the annular opening 81.
 基板9が搬入されると、チャンバ開閉機構131によりチャンバ蓋部122が図1に示す位置から図5に示す位置(チャンバ本体121に近接する位置)まで下降する。また、カップ部161が、図1に示す位置から図5に示す位置まで上昇し、環状開口81の径方向外側に全周に亘って位置する。以下の説明では、図5に示すチャンバ12およびカップ部161の状態を「第1密閉状態」という。また、図5に示すカップ部161の位置を「液受け位置」といい、図1に示すカップ部161の位置を「退避位置」という。カップ部移動機構162は、カップ部161を、環状開口81の径方向外側の液受け位置と、液受け位置よりも下方の退避位置との間で上下方向に移動する。 When the substrate 9 is carried in, the chamber opening / closing mechanism 131 lowers the chamber lid 122 from the position shown in FIG. 1 to the position shown in FIG. 5 (position close to the chamber body 121). Further, the cup portion 161 rises from the position shown in FIG. 1 to the position shown in FIG. 5, and is located over the entire circumference on the radially outer side of the annular opening 81. In the following description, the state of the chamber 12 and the cup part 161 shown in FIG. 5 is referred to as a “first sealed state”. Further, the position of the cup part 161 shown in FIG. 5 is referred to as a “liquid receiving position”, and the position of the cup part 161 shown in FIG. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.
 液受け位置に位置するカップ部161では、側壁部611が、環状開口81と径方向に対向する。また、上面部612の内縁部の上面が、チャンバ蓋部122の外縁部下端のリップシール232に全周に亘って接する。チャンバ蓋部122とカップ部161の上面部612との間には、気体や液体の通過を防止するシール部が形成される。これにより、チャンバ本体121、チャンバ蓋部122、カップ部161およびカップ対向部163により囲まれる密閉された空間(以下、「拡大密閉空間100」という。)が形成される。拡大密閉空間100は、チャンバ蓋部122とチャンバ本体121との間のチャンバ空間120と、カップ部161とカップ対向部163とに囲まれる側方空間160とが、環状開口81を介して連通することにより形成された1つの空間である。 In the cup portion 161 located at the liquid receiving position, the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber cover part 122 and the upper surface part 612 of the cup part 161, the seal part which prevents passage of gas and a liquid is formed. Thereby, a sealed space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163 is formed. In the enlarged sealed space 100, the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this.
 また、第1密閉状態では、図6に示すように、トッププレート123の各係合部241の下部の凹部242に、当接部収容部431から上方に突出する当接部43の上端部が嵌る。これにより、トッププレート123が、基板支持部141の支持部ベース142と連結される。言い換えると、トッププレート123の基板支持部141に対する回転方向(周方向)における相対位置が固定される。以下の説明では、トッププレート123が基板支持部141と連結する位置を「連結位置」という。チャンバ蓋部122が下降する際には、係合部241と当接部43とが嵌り合うように、基板回転機構15により支持部ベース142の回転位置が制御される。実際には、各当接部43の上端面、および、当該上端面に対向する係合部241の凹部242内の面には、磁石437,243が設けられ、これらの磁石437,243の間に働く磁力(引力)により、係合部241と当接部43とが強固に結合される。 Further, in the first sealed state, as shown in FIG. 6, the upper end portion of the abutting portion 43 protruding upward from the abutting portion accommodating portion 431 is formed in the concave portion 242 of the lower portion of each engaging portion 241 of the top plate 123. fit. As a result, the top plate 123 is connected to the support base 142 of the substrate support 141. In other words, the relative position in the rotation direction (circumferential direction) of the top plate 123 with respect to the substrate support 141 is fixed. In the following description, a position where the top plate 123 is connected to the substrate support portion 141 is referred to as a “connection position”. When the chamber lid 122 is lowered, the rotation position of the support base 142 is controlled by the substrate rotation mechanism 15 so that the engagement portion 241 and the contact portion 43 are fitted. Actually, magnets 437 and 243 are provided on the upper end surface of each abutting portion 43 and the surface in the concave portion 242 of the engaging portion 241 facing the upper end surface, and between these magnets 437 and 243. The engaging portion 241 and the contact portion 43 are firmly coupled to each other by the magnetic force (attraction) acting on the.
 このとき、図5に示すように、被支持部237のフランジ部239が、プレート支持部222のフランジ部224の上方に離間しており、プレート支持部222と被支持部237とは接触しない。換言すると、プレート支持部222によるトッププレート123の支持、すなわち、チャンバ開閉機構131による間接的なトッププレート123の支持が解除されている。このため、トッププレート123は、チャンバ蓋部122から独立して、基板保持部14および基板保持部14に保持された基板9と共に、基板回転機構15により回転可能である。 At this time, as shown in FIG. 5, the flange portion 239 of the supported portion 237 is spaced above the flange portion 224 of the plate support portion 222, and the plate support portion 222 and the supported portion 237 are not in contact with each other. In other words, the support of the top plate 123 by the plate support part 222, that is, the indirect support of the top plate 123 by the chamber opening / closing mechanism 131 is released. For this reason, the top plate 123 can be rotated by the substrate rotating mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.
 図6に示すように、係合部241の下面が当接部収容部431の上面と当接するまで、トッププレート123の自重により当接部43が下方に押し込まれる。バー44のバー45側の端部は、当接部43側の端部よりも上側に移動し、バー45の上端部が基板9に近づくようにバー45が傾斜する。これにより、爪部41が支持ピン144上の基板9のエッジ(側面)に当接し、当該エッジが爪部41により中心軸J1に向けて押される。実際には、複数の当接部43に作用する力が複数の爪部41にそれぞれ伝達され、周方向に配列された複数の爪部41により基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。その結果、基板9の中心を中心軸J1上に配置しつつ、チャック部4により基板9が強固に保持される(ステップS11)。基板支持部141にて支持される基板9の大きさ(直径)が変動する場合であっても、当接部43の弾性部材436の縮み量が変化することにより、係合部241の下面が当接部収容部431の上面と当接する。したがって、トッププレート123の下面と基板9の上面91との間の上下方向の距離が一定に保たれる。 As shown in FIG. 6, the contact portion 43 is pushed downward by the weight of the top plate 123 until the lower surface of the engagement portion 241 contacts the upper surface of the contact portion accommodating portion 431. The end of the bar 44 on the side of the bar 45 moves above the end on the side of the contact part 43, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9. As a result, the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1. Actually, the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41, respectively, and the plurality of claw portions 41 arranged in the circumferential direction cause the different portions of the edge of the substrate 9 to have substantially the same force. It is pushed toward the central axis J1. As a result, the substrate 9 is firmly held by the chuck portion 4 while the center of the substrate 9 is disposed on the central axis J1 (step S11). Even when the size (diameter) of the substrate 9 supported by the substrate support portion 141 varies, the amount of contraction of the elastic member 436 of the contact portion 43 changes, so that the lower surface of the engagement portion 241 is changed. It abuts on the upper surface of the abutting portion accommodating portion 431. Accordingly, the vertical distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.
 基板9が保持されると、図5に示す基板回転機構15により一定の回転数(比較的低い回転数であり、以下、「定常回転数」という。)での基板9の回転が開始される。また、不活性ガス供給部186(図2参照)から拡大密閉空間100への不活性ガス(ここでは、窒素ガス)の供給が開始されるとともに、外側排気部194による拡大密閉空間100内のガスの排出が開始される。これにより、所定時間経過後に、拡大密閉空間100が、不活性ガスが充填された不活性ガス充填状態(すなわち、酸素濃度が低い低酸素雰囲気)となる。なお、拡大密閉空間100への不活性ガスの供給、および、拡大密閉空間100内のガスの排出は、図1に示すオープン状態から行われていてもよい。 When the substrate 9 is held, the substrate rotation mechanism 15 shown in FIG. 5 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”). . In addition, the supply of the inert gas (here, nitrogen gas) from the inert gas supply unit 186 (see FIG. 2) to the expanded sealed space 100 is started, and the gas in the expanded sealed space 100 by the outer exhaust unit 194 is started. Starts to be discharged. As a result, after a predetermined time has elapsed, the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration). Note that the supply of the inert gas to the enlarged sealed space 100 and the discharge of the gas in the enlarged sealed space 100 may be performed from the open state shown in FIG.
 次に、回転する基板9の下面92に向けて、複数の加熱ガス供給ノズル180から、加熱したガスが噴出される。これにより、基板9が加熱される。そして、上部ノズル181から、基板9の上面91の中央部に向けて薬液の供給が開始される(ステップS12)。上部ノズル181からの薬液は、回転する基板9の上面91に連続的に供給される。上面91上の薬液は、基板9の回転により基板9の外周部へと拡がり、上面91全体が薬液により被覆される。 Next, heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. And supply of a chemical | medical solution is started toward the center part of the upper surface 91 of the board | substrate 9 from the upper nozzle 181 (step S12). The chemical solution from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical solution on the upper surface 91 spreads to the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and the entire upper surface 91 is covered with the chemical solution.
 上部ノズル181からの薬液の供給中は、加熱ガス供給ノズル180からの加熱ガスの噴出も継続される。これにより、基板9をおよそ所望の温度にて均一に加熱しつつ、薬液による上面91に対するエッチングが行われる。その結果、基板9に対する薬液処理の均一性を向上することができる。上部ノズル181から薬液を供給する際には、連結位置に位置するトッププレート123の下面が、基板9の上方において基板9を覆うように基板9の上面91に沿って広がり、基板9の上面91に近接している。このように、基板9に対する薬液による処理は、トッププレート123の下面と基板9の上面91との間の極めて狭い空間において行われる。これにより、基板9に対する薬液処理の均一性をさらに向上することができる。 During the supply of the chemical solution from the upper nozzle 181, the ejection of the heated gas from the heated gas supply nozzle 180 is also continued. Thereby, etching with respect to the upper surface 91 with a chemical | medical solution is performed, heating the board | substrate 9 uniformly at about desired temperature. As a result, the uniformity of the chemical treatment for the substrate 9 can be improved. When supplying the chemical solution from the upper nozzle 181, the lower surface of the top plate 123 positioned at the connection position extends along the upper surface 91 of the substrate 9 so as to cover the substrate 9 above the substrate 9, and the upper surface 91 of the substrate 9. Is close to. As described above, the treatment with the chemical solution for the substrate 9 is performed in a very narrow space between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9. Thereby, the uniformity of the chemical treatment for the substrate 9 can be further improved.
 拡大密閉空間100では、回転する基板9の上面91から飛散する薬液が、環状開口81を介してカップ部161にて受けられ、液受け凹部165へと導かれる。液受け凹部165へと導かれた薬液は、図2に示す第1排出路191を介して気液分離部193に流入する。薬液回収部195では、気液分離部193から薬液が回収され、フィルタ等を介して薬液から不純物等が除去された後、再利用される。 In the enlarged sealed space 100, the chemical liquid splashed from the upper surface 91 of the rotating substrate 9 is received by the cup portion 161 through the annular opening 81 and guided to the liquid receiving recess 165. The chemical liquid guided to the liquid receiving recess 165 flows into the gas-liquid separator 193 via the first discharge path 191 shown in FIG. In the chemical solution recovery unit 195, the chemical solution is recovered from the gas-liquid separation unit 193 and is reused after impurities and the like are removed from the chemical solution through a filter or the like.
 上部ノズル181からの薬液の供給開始から所定時間(例えば、60~120秒)経過すると、上部ノズル181からの薬液の供給、および、加熱ガス供給ノズル180からの加熱ガスの供給が停止される。そして、基板回転機構15により、所定時間(例えば、1~3秒)だけ基板9の回転数が定常回転数よりも高くされ、基板9から薬液が除去される。 When a predetermined time (for example, 60 to 120 seconds) elapses from the start of supply of the chemical solution from the upper nozzle 181, supply of the chemical solution from the upper nozzle 181 and supply of the heated gas from the heated gas supply nozzle 180 are stopped. Then, the substrate rotation mechanism 15 makes the rotation speed of the substrate 9 higher than the steady rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical solution is removed from the substrate 9.
 続いて、チャンバ蓋部122およびカップ部161が同期して下方へと移動する。そして、図7に示すように、チャンバ蓋部122の外縁部下端のリップシール231が、チャンバ側壁部214の上部と接することにより、環状開口81が閉じられ、チャンバ空間120が、側方空間160と隔絶された状態で密閉される。カップ部161は、図1と同様に、退避位置に位置する。以下、図7に示すチャンバ12およびカップ部161の状態を「第2密閉状態」という。第2密閉状態では、基板9は、チャンバ12の内壁と直接対向し、これらの間に他の液受け部は存在しない。 Subsequently, the chamber lid part 122 and the cup part 161 move downward in synchronization. Then, as shown in FIG. 7, the lip seal 231 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160. And sealed in an isolated state. The cup part 161 is located at the retracted position as in FIG. Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 7 is referred to as a “second sealed state”. In the second sealed state, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.
 第2密閉状態でも、第1密閉状態と同様に、チャック部4の複数の爪部41が基板9のエッジを中心軸J1に向けて押すことにより、基板9が強固に保持されている。また、プレート支持部222によるトッププレート123の保持が解除されており、トッププレート123は、チャンバ蓋部122から独立して、基板保持部14および基板9と共に回転する。 Even in the second sealed state, similarly to the first sealed state, the plurality of claws 41 of the chuck portion 4 push the edge of the substrate 9 toward the central axis J1, whereby the substrate 9 is firmly held. Further, the holding of the top plate 123 by the plate support unit 222 is released, and the top plate 123 rotates together with the substrate holding unit 14 and the substrate 9 independently of the chamber lid unit 122.
 チャンバ空間120が密閉されると、外側排気部194(図2参照)によるガスの排出が停止されるとともに、内側排気部198によるチャンバ空間120内のガスの排出が開始される。そして、基板9への純水の供給が、純水供給部184により開始される(ステップS13)。 When the chamber space 120 is sealed, gas discharge by the outer exhaust unit 194 (see FIG. 2) is stopped and gas discharge from the chamber space 120 by the inner exhaust unit 198 is started. Then, the supply of pure water to the substrate 9 is started by the pure water supply unit 184 (step S13).
 純水供給部184からの純水は、上部ノズル181から基板9の上面91の中央部に連続的に供給される。また、純水供給部184からの純水は、下部ノズル182から基板9の下面92の中央部にも連続的に供給される。上部ノズル181および下部ノズル182から吐出される純水は、洗浄液として基板9に供給される。 Pure water from the pure water supply unit 184 is continuously supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9. The pure water from the pure water supply unit 184 is also continuously supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9. Pure water discharged from the upper nozzle 181 and the lower nozzle 182 is supplied to the substrate 9 as a cleaning liquid.
 純水は、基板9の回転により上面91および下面92の外周部へと拡がり、基板9の外周縁から外側へと飛散する。基板9から飛散する純水は、チャンバ12の内壁(すなわち、チャンバ蓋部122およびチャンバ側壁部214の内壁)にて受けられ、図2に示す第2排出路192、気液分離部197および排液部199を介して廃棄される(後述する基板9の乾燥処理においても同様)。これにより、チャンバ空間120において、純水による基板9に対する洗浄処理と共に、チャンバ12内の洗浄も実質的に行われる。実際には、基板9から飛散する純水の一部がチャンバ12の内壁にて中心軸J1側へと跳ね返るが、基板9の上面91はトッププレート123にて覆われることにより、チャンバ12の内壁からの純水が基板9の上面91に付着することが防止される。 The pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. Pure water splashing from the substrate 9 is received by the inner wall of the chamber 12 (that is, the inner walls of the chamber lid portion 122 and the chamber side wall portion 214), and the second discharge path 192, the gas-liquid separation portion 197, and the discharge portion shown in FIG. It is discarded through the liquid part 199 (the same applies to the drying process of the substrate 9 described later). Thereby, in the chamber space 120, the cleaning of the chamber 12 is substantially performed together with the cleaning process for the substrate 9 with pure water. Actually, a part of pure water splashing from the substrate 9 rebounds to the central axis J1 side on the inner wall of the chamber 12, but the upper surface 91 of the substrate 9 is covered with the top plate 123, so that the inner wall of the chamber 12 is covered. Is prevented from adhering to the upper surface 91 of the substrate 9.
 純水の供給開始から所定時間経過すると、純水供給部184からの純水の供給が停止される。そして、複数の加熱ガス供給ノズル180から、基板9の下面92に向けて、加熱したガスが噴出される。これにより、基板9が加熱される。また、加熱ガス供給ノズル180からの加熱ガスの噴出が継続された状態で、基板9の回転数が定常回転数よりも十分に高くされる。これにより、純水が基板9上から除去され、基板9の乾燥処理が行われる(ステップS14)。基板9の乾燥開始から所定時間経過すると、基板9の回転が停止する。なお、基板9の乾燥処理の前に、上部ノズル181から基板9の上面91上にIPAが供給され、上面91上において純水がIPAに置換されてよい。また、基板9の乾燥処理は、内側排気部198によりチャンバ空間120が減圧され、大気圧よりも低い減圧雰囲気にて行われてもよい。 When a predetermined time has elapsed from the start of supplying pure water, the supply of pure water from the pure water supply unit 184 is stopped. The heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the substrate 9. Thereby, the substrate 9 is heated. Further, the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the heating gas is continuously ejected from the heating gas supply nozzle 180. As a result, pure water is removed from the substrate 9, and the substrate 9 is dried (step S14). When a predetermined time has elapsed from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. Prior to the drying process of the substrate 9, IPA may be supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed in a reduced pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.
 その後、チャンバ蓋部122が上昇することにより、図1に示すように、チャンバ12がオープン状態となり、トッププレート123が基板支持部141に対して離間位置に配置される。ステップS14では、トッププレート123が基板支持部141と共に回転するため、トッププレート123の下面に液体はほとんど残存せず、チャンバ蓋部122の上昇時にトッププレート123から液体が基板9上に落下することはない。 Thereafter, when the chamber lid 122 is raised, the chamber 12 is opened as shown in FIG. 1, and the top plate 123 is disposed at a separated position with respect to the substrate support 141. In step S14, since the top plate 123 rotates together with the substrate support 141, almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no.
 トッププレート123が離間位置に配置された状態では、係合部241と図3に示す当接部43とが上下方向に離間しており、ばね435の付勢により当接部43が図3に示す位置に配置される。これにより、バー45が上下方向に沿っておよそ直立し、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間する。すなわち、チャック部4による基板9の保持が解除される(ステップS15)。その後、基板9は外部の搬送機構によりチャンバ12から搬出され(ステップS16)、基板処理装置1による基板9に対する処理が完了する。実際には、上記ステップS10~S16の処理は、他の基板9に対して繰り返される。 In a state where the top plate 123 is disposed at the separated position, the engaging portion 241 and the contact portion 43 shown in FIG. 3 are separated in the vertical direction, and the contact portion 43 is moved to FIG. It is arranged at the position shown. Thereby, the bar 45 is substantially upright in the vertical direction, and the claw portion 41 is separated from the edge of the substrate 9 to the outside (on the side opposite to the central axis J1). That is, the holding of the substrate 9 by the chuck portion 4 is released (step S15). Thereafter, the substrate 9 is unloaded from the chamber 12 by an external transport mechanism (step S16), and the processing of the substrate 9 by the substrate processing apparatus 1 is completed. Actually, the processes in steps S10 to S16 are repeated for the other substrates 9.
 図8は、比較例の基板処理装置における基板保持部近傍を示す断面図である。比較例の基板処理装置では、基板保持部95が、基板9の外縁部を下側から支持する略円環状の基板支持部96と、基板支持部96に支持された基板9の外縁部を上側から押さえる基板押さえ部97とを備える。基板支持部96は、略円環板状の支持部ベース960と、支持部ベース960の上面に固定される複数の第1接触部961とを備え、複数の第1接触部961は周方向に配列される。基板押さえ部97は、トッププレート123の下面に固定される複数の第2接触部971を備え、複数の第2接触部971は周方向に配列される。トッププレート123の外縁部の下面には、複数の係合部951が周方向に配列され、支持部ベース960の上面には、複数の係合ピン952が周方向に配列される。トッププレート123が連結位置に配置されると、係合部951と係合ピン952とが嵌り合い、トッププレート123と基板支持部96とが連結される。比較例の基板処理装置では、基板押さえ部97が、トッププレート123の自重により基板9を基板支持部96へと押圧することにより、基板9が基板押さえ部97と基板支持部96とで上下から挟まれる。 FIG. 8 is a cross-sectional view showing the vicinity of the substrate holder in the substrate processing apparatus of the comparative example. In the substrate processing apparatus of the comparative example, the substrate holding unit 95 includes a substantially annular substrate support unit 96 that supports the outer edge portion of the substrate 9 from the lower side, and the outer edge portion of the substrate 9 supported by the substrate support unit 96 on the upper side. And a substrate pressing portion 97 for pressing from the substrate. The substrate support portion 96 includes a substantially annular plate-like support portion base 960 and a plurality of first contact portions 961 fixed to the upper surface of the support portion base 960. The plurality of first contact portions 961 are arranged in the circumferential direction. Arranged. The substrate pressing portion 97 includes a plurality of second contact portions 971 fixed to the lower surface of the top plate 123, and the plurality of second contact portions 971 are arranged in the circumferential direction. On the lower surface of the outer edge portion of the top plate 123, a plurality of engagement portions 951 are arranged in the circumferential direction, and on the upper surface of the support portion base 960, a plurality of engagement pins 952 are arranged in the circumferential direction. When the top plate 123 is disposed at the coupling position, the engaging portion 951 and the engaging pin 952 are fitted, and the top plate 123 and the substrate support portion 96 are coupled. In the substrate processing apparatus of the comparative example, the substrate pressing portion 97 presses the substrate 9 against the substrate supporting portion 96 by the weight of the top plate 123, so that the substrate 9 is moved from above and below by the substrate pressing portion 97 and the substrate supporting portion 96. Sandwiched.
 ところで、基板処理装置では、基板9の反りや製造誤差等により、搬入される基板9の直径が僅かに変動する。このような変動に対応するため、比較例の基板処理装置では、SEMI(Semiconductor Equipment and Materials International)規格における最大の直径の基板9に合わせて、支持部ベース960における複数の第1接触部961の位置および形状、並びに、トッププレート123における複数の第2接触部971の位置および形状が決定される。したがって、比較例の基板処理装置では、上記規格における最大の直径よりも小さい直径の基板9が搬入されると、当該基板9に対する処理液の供給時や、基板9の回転の加減速時等に、基板支持部96上の基板9の位置が変動する(すなわち、基板9が僅かに動く)ことがある。この場合、基板9と接触部961,971とが擦れて汚染物が発生したり、接触部961,971の摩耗が生じる。また、基板9の位置が大きく変動すると、基板9が破損する虞もある。なお、比較例の基板処理装置では、第1接触部961の端面が調芯用の傾斜面であるが、このような傾斜面を設けても、必ずしも基板9が精度よく調芯される訳ではない。 By the way, in the substrate processing apparatus, the diameter of the substrate 9 to be carried in slightly varies due to warpage of the substrate 9 or manufacturing errors. In order to cope with such fluctuations, in the substrate processing apparatus of the comparative example, the plurality of first contact portions 961 in the support portion base 960 are matched with the substrate 9 having the maximum diameter in the SEMI (SemiconductoremiEquipment and Materials International) standard. The position and shape, and the positions and shapes of the plurality of second contact portions 971 on the top plate 123 are determined. Therefore, in the substrate processing apparatus of the comparative example, when the substrate 9 having a diameter smaller than the maximum diameter in the above standard is carried in, when the processing liquid is supplied to the substrate 9 or when acceleration / deceleration of the rotation of the substrate 9 is performed. The position of the substrate 9 on the substrate support 96 may fluctuate (that is, the substrate 9 moves slightly). In this case, the substrate 9 and the contact portions 961 and 971 are rubbed to generate contaminants, and the contact portions 961 and 971 are worn. Further, if the position of the substrate 9 varies greatly, the substrate 9 may be damaged. In the substrate processing apparatus of the comparative example, the end surface of the first contact portion 961 is an inclined surface for alignment. However, even if such an inclined surface is provided, the substrate 9 is not necessarily aligned accurately. Absent.
 これに対し、基板処理装置1では、基板支持部141において、複数の爪部41および伝達機構42を有するチャック部4が設けられ、トッププレート123が連結位置に位置する際に、トッププレート123の自重により伝達機構42の各当接部43が上下方向に押し込まれる。伝達機構42は、各当接部43に作用する力を対応する爪部41に伝達することにより、複数の爪部41に基板9のエッジを中心軸J1に向けて押させる。これにより、搬入される基板9の直径が変動する場合であっても、連結位置に配置されるトッププレート123の自重を利用して、複数の爪部41により基板9を外側から保持することが実現される。その結果、基板9に対する処理液の供給時や、基板9の回転の加減速時等に、基板支持部141上の基板9の位置が変動することを抑制することができ、基板9の破損も防止することができる。また、複数の爪部41により、基板9の中心が中心軸J1上に配置される、すなわち、基板9が回転中心に対して位置合わせされることにより、基板9、基板支持部141およびトッププレート123を含む回転体の重心を中心軸J1近傍に配置する(バランスを取る)ことができ、回転体を安定して回転することができる。 On the other hand, in the substrate processing apparatus 1, the substrate support portion 141 is provided with the chuck portion 4 having the plurality of claw portions 41 and the transmission mechanism 42, and when the top plate 123 is positioned at the coupling position, Each contact portion 43 of the transmission mechanism 42 is pushed in the vertical direction by its own weight. The transmission mechanism 42 causes the plurality of claw portions 41 to push the edge of the substrate 9 toward the central axis J <b> 1 by transmitting the force acting on each contact portion 43 to the corresponding claw portion 41. Thereby, even if the diameter of the board | substrate 9 carried in fluctuates, the board | substrate 9 can be hold | maintained from the outer side with the some nail | claw part 41 using the dead weight of the top plate 123 arrange | positioned at a connection position. Realized. As a result, the position of the substrate 9 on the substrate support portion 141 can be prevented from fluctuating when the processing liquid is supplied to the substrate 9 or when the rotation of the substrate 9 is accelerated / decelerated. Can be prevented. Further, the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned. The center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
 また、連結位置に配置されたトッププレート123が基板9の上面91に近接して上面91を覆う。これにより、回転する基板9に処理液を供給する処理において、基板9の外縁部から飛散する処理液がチャンバ12の内壁にて跳ね返って基板9の上面91に再付着することが防止される。さらに、基板保持部14では、伝達機構42が弾性部材436を含み、基板支持部141に支持される基板9の大きさが変動する場合に、弾性部材436が弾性変形する。これにより、連結位置におけるトッププレート123と基板9との間の距離を一定に保つことができる。その結果、基板9の大きさが変動する場合であっても、基板9に対して一定の条件にて処理を施すことができる。 Further, the top plate 123 arranged at the connection position is close to the upper surface 91 of the substrate 9 and covers the upper surface 91. Thereby, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid scattered from the outer edge portion of the substrate 9 is prevented from splashing on the inner wall of the chamber 12 and reattaching to the upper surface 91 of the substrate 9. Further, in the substrate holding unit 14, the transmission mechanism 42 includes the elastic member 436, and the elastic member 436 is elastically deformed when the size of the substrate 9 supported by the substrate support unit 141 varies. Thereby, the distance between the top plate 123 and the board | substrate 9 in a connection position can be kept constant. As a result, even if the size of the substrate 9 varies, the substrate 9 can be processed under certain conditions.
 基板処理装置1では、基板回転機構15が、中心軸J1を中心とする環状のロータ部152と、ロータ部152と隙間を空けて径方向に対向する環状のステータ部151とを備える。そして、基板支持部141がロータ部152に接続され、基板支持部141およびロータ部152が、チャンバ12内においてチャンバ12に接触することなく回転する。このように、基板支持部141に設けられるチャック部4に対して電気や圧縮空気等の動力源による駆動力を伝達することができない場合であっても、上記構造を有する基板処理装置1では、基板9を回転中心に対して位置合わせしつつ保持することが可能となる。 In the substrate processing apparatus 1, the substrate rotation mechanism 15 includes an annular rotor portion 152 centered on the central axis J1, and an annular stator portion 151 that faces the rotor portion 152 in the radial direction with a gap. The substrate support unit 141 is connected to the rotor unit 152, and the substrate support unit 141 and the rotor unit 152 rotate without contacting the chamber 12 in the chamber 12. Thus, even when it is not possible to transmit a driving force from a power source such as electricity or compressed air to the chuck portion 4 provided in the substrate support portion 141, the substrate processing apparatus 1 having the above structure The substrate 9 can be held while being aligned with respect to the rotation center.
 図9は、チャック部の他の例を示す図である。図9のチャック部4aの伝達機構42aは、各爪部41aに対して設けられる当接部43および複数のシャフト46,47を備える。当接部43および当接部収容部431の内部構造は図3と同様である。 FIG. 9 is a diagram showing another example of the chuck portion. The transmission mechanism 42a of the chuck portion 4a in FIG. 9 includes an abutting portion 43 and a plurality of shafts 46 and 47 provided for each claw portion 41a. The internal structure of the contact part 43 and the contact part accommodating part 431 is the same as that of FIG.
 図10は、当接部43および複数のシャフト46,47を示す斜視図である。図10では、図示の便宜上、他の構成要素の図示を省略している。図9に示すように、支持部ベース142の内部空間143には、中心軸J1に垂直な方向(図9の横方向)に伸びるシャフト46が配置される。シャフト46は、一対のシャフト支持部460により、その中心軸J2を中心として回転可能に支持される。図10に示すように、シャフト46の一方の端部には、シャフト46の中心軸J2に垂直な方向に伸びるバー461の一方の端部が固定され、バー461の他方の端部は当接部43の下端部にピン424を介して接続される。バー461には、バー461の長手方向に伸びる長孔462が形成され、ピン424は、長孔462に挿入される。 FIG. 10 is a perspective view showing the contact portion 43 and the plurality of shafts 46 and 47. In FIG. 10, other components are not shown for convenience of illustration. As shown in FIG. 9, a shaft 46 extending in a direction perpendicular to the central axis J1 (lateral direction in FIG. 9) is disposed in the internal space 143 of the support base 142. The shaft 46 is supported by a pair of shaft support portions 460 so as to be rotatable about its central axis J2. As shown in FIG. 10, one end of a bar 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end of the shaft 46, and the other end of the bar 461 is in contact with the other end. The lower end of the portion 43 is connected via a pin 424. A long hole 462 extending in the longitudinal direction of the bar 461 is formed in the bar 461, and the pin 424 is inserted into the long hole 462.
 図9に示すように、支持部ベース142の内部空間143には、上下方向に伸びるもう1つのシャフト47の下部が配置される。シャフト47は、シャフト支持部470により、その中心軸J3を中心として回転可能に支持される。図10に示すように、シャフト46の他方の端部には、シャフト46の中心軸J2に垂直な方向に伸びるバー463の一方の端部が固定され、バー463の他方の端部はシャフト47の上部にピン425を介して接続される。バー463には、バー463の長手方向に伸びる長孔464が形成され、ピン425は、長孔464に挿入される。 As shown in FIG. 9, a lower portion of another shaft 47 extending in the vertical direction is disposed in the internal space 143 of the support portion base 142. The shaft 47 is supported by the shaft support portion 470 so as to be rotatable about its central axis J3. As shown in FIG. 10, one end of a bar 463 extending in a direction perpendicular to the central axis J <b> 2 of the shaft 46 is fixed to the other end of the shaft 46, and the other end of the bar 463 is fixed to the shaft 47. Is connected to the upper portion of the pin via a pin 425. A long hole 464 extending in the longitudinal direction of the bar 463 is formed in the bar 463, and the pin 425 is inserted into the long hole 464.
 図11は、1つの爪部41aを示す平面図であり、上下方向に沿って見た爪部41aを示している。図9および図11に示すように、爪部41aは、上下方向に沿って見た形状が楕円形の爪部本体411を有する。爪部本体411の上面412は、当該楕円形の長軸の一端から他端に向かって高さが漸次減少する傾斜面である。爪部本体411の上面412において、高さが最も大きい位置近傍には、上方に向かって突出する突出部413が設けられる。突出部413は、上部の直径が下部の直径よりも大きい逆円錐台状である。爪部本体411は、有蓋円筒状の爪部支持台410の上面に固定される。 FIG. 11 is a plan view showing one claw portion 41a, showing the claw portion 41a viewed along the vertical direction. As shown in FIGS. 9 and 11, the claw portion 41a has a claw portion main body 411 whose shape viewed along the vertical direction is elliptical. An upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the elliptical long axis toward the other end. On the upper surface 412 of the claw body 411, a protrusion 413 that protrudes upward is provided near the position where the height is the largest. The protrusion 413 has an inverted truncated cone shape in which the upper diameter is larger than the lower diameter. The claw portion main body 411 is fixed to the upper surface of the covered claw portion support base 410.
 シャフト47において、下部を除く部位は支持部ベース142の内部空間143の外側に配置され、シャフト47の上端部は爪部支持台410の蓋部の下面に固定される。内部空間143の外側に配置されるシャフト47の部位の周囲は、爪部支持台410の側壁部により囲まれる。爪部支持台410の側壁部と支持部ベース142との接続部は、両者が摺動可能な状態でシールされる。 In the shaft 47, the portion excluding the lower portion is disposed outside the internal space 143 of the support portion base 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410. The periphery of the portion of the shaft 47 disposed outside the internal space 143 is surrounded by the side wall portion of the claw support base 410. The connecting portion between the side wall portion of the claw support base 410 and the support portion base 142 is sealed in a state where both can slide.
 トッププレート123が離間位置に位置し、図9中に二点鎖線にて示すように、ばね435の付勢により円板部434が上側支持部432の下面と当接する状態では、基板9のエッジが、爪部本体411の上面412において突出部413から僅かに離れた位置に配置される。図9中に実線にて示すように、連結位置に位置するトッププレート123の自重により当接部43が下方に押し込まれると、図10に示すシャフト46が中心軸J2を中心として回動し、シャフト47が中心軸J3を中心として回動する。これにより、爪部本体411が図11中に二点鎖線にて示す回転位置から実線にて示す回転位置へと中心軸J3を中心として回動し、図9中に実線にて示すように、基板9が上方に僅かに移動しつつ突出部413の側面が基板9のエッジに当接する。言い換えると、突出部413の側面と爪部本体411の上面412とが形成する凹部に、基板9の外縁部が噛み込む。実際には、基板9の外縁に沿って配列される複数の爪部41aに対して複数の当接部43に作用する力がそれぞれ伝達され、複数の爪部41aにより基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。このようにして、図9に示すチャック部4aでは、連結位置に配置されるトッププレート123の重量を利用して、基板9を回転中心に対して位置合わせしつつ保持することが実現される。 In a state where the top plate 123 is located at the separated position and the disk portion 434 is in contact with the lower surface of the upper support portion 432 by the bias of the spring 435 as indicated by a two-dot chain line in FIG. However, the upper surface 412 of the nail | claw part main body 411 is arrange | positioned in the position left | separated from the protrusion part 413 slightly. As shown by the solid line in FIG. 9, when the contact portion 43 is pushed downward by the weight of the top plate 123 located at the connection position, the shaft 46 shown in FIG. 10 rotates about the central axis J2. The shaft 47 rotates about the central axis J3. As a result, the claw body 411 rotates around the central axis J3 from the rotation position indicated by the two-dot chain line in FIG. 11 to the rotation position indicated by the solid line, as indicated by the solid line in FIG. The side surface of the protruding portion 413 contacts the edge of the substrate 9 while the substrate 9 moves slightly upward. In other words, the outer edge portion of the substrate 9 bites into the recess formed by the side surface of the protruding portion 413 and the upper surface 412 of the claw portion main body 411. Actually, forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41a arranged along the outer edge of the substrate 9, respectively, and different portions of the edge of the substrate 9 are transmitted by the plurality of claw portions 41a. Are pushed toward the central axis J1 with substantially the same force. In this way, in the chuck portion 4a shown in FIG. 9, it is realized that the substrate 9 is held while being aligned with the center of rotation using the weight of the top plate 123 arranged at the connection position.
 図12は、チャック部のさらに他の例を示す図である。図12のチャック部4bは、トッププレート123に設けられる。図12では、トッププレート123、および、当接部収容部431内の構成の一部については、中心軸J1を含む面による断面を示している。チャック部4bは、複数の爪部41と、伝達機構42bとを備える。複数の爪部41は、中心軸J1に沿って見た場合に基板9の周囲に配置される。伝達機構42bは、図3の伝達機構42を上下方向に反転したものに近似した構造を有する。 FIG. 12 is a diagram showing still another example of the chuck portion. 12 is provided on the top plate 123. As shown in FIG. In FIG. 12, the cross section by the surface containing the central axis J1 is shown about the top plate 123 and a part of structure in the contact part accommodating part 431. In FIG. The chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. The plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1. The transmission mechanism 42b has a structure similar to that obtained by inverting the transmission mechanism 42 in FIG. 3 in the vertical direction.
 具体的に、伝達機構42bは、各爪部41に対して設けられる当接部43および複数のバー44,45を備える。当接部43は、上側支持部432および下側支持部433により上下方向に移動可能に支持される。トッププレート123の下面には略筒状の当接部収容部431が設けられ、下側支持部433は当接部収容部431内に設けられる。当接部43の上端部は、トッププレート123に形成された内部空間124に配置される。当該内部空間124にはバー44が配置され、バー44の一方の端部が当接部43の上端部にピン421を介して接続される。バー44には、バー44の長手方向に伸びる長孔441が形成され、ピン421は、長孔441に挿入される。バー44は、バー支持部440により、図12の紙面に垂直な回転軸を中心として回転可能に支持される。 Specifically, the transmission mechanism 42 b includes an abutting portion 43 provided for each claw portion 41 and a plurality of bars 44 and 45. The contact portion 43 is supported by the upper support portion 432 and the lower support portion 433 so as to be movable in the vertical direction. A substantially cylindrical contact portion receiving portion 431 is provided on the lower surface of the top plate 123, and the lower support portion 433 is provided in the contact portion receiving portion 431. An upper end portion of the contact portion 43 is disposed in an internal space 124 formed in the top plate 123. A bar 44 is arranged in the internal space 124, and one end portion of the bar 44 is connected to the upper end portion of the contact portion 43 via a pin 421. A long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441. The bar 44 is supported by the bar support portion 440 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
 バー44の他方の端部は、もう1つのバー45の上端部にピン422を介して接続される。バー45には、バー45の長手方向に伸びる長孔451が形成され、ピン422は、長孔451に挿入される。バー45は、バー支持部450により、図12の紙面に垂直な回転軸を中心として回転可能に支持される。バー45において、バー支持部450よりも下側の部分はトッププレート123の内部空間124の外側に配置される。バー支持部450の下側近傍におけるバー45の部位の周囲はダイアフラムシール427により覆われる。バー45の下端部には爪部41が取り付けられる。 The other end of the bar 44 is connected to the upper end of another bar 45 via a pin 422. A long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451. The bar 45 is supported by the bar support portion 450 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG. In the bar 45, a portion below the bar support portion 450 is disposed outside the internal space 124 of the top plate 123. The periphery of the bar 45 in the vicinity of the lower side of the bar support 450 is covered with a diaphragm seal 427. A claw portion 41 is attached to the lower end portion of the bar 45.
 当接部43に取り付けられた円板部434は、上側支持部432と下側支持部433との間に配置される。円板部434と上側支持部432との間には、当接部43の周囲を囲むばね435が設けられる。ばね435により、円板部434および当接部43が下方に付勢される。トッププレート123が離間位置に位置し、図12中に二点鎖線にて示すように円板部434が下側支持部433の上面と当接する状態では、バー45の上下方向に対する傾斜角が小さくなり、爪部41が基板9のエッジから外側に離間する。 The disc part 434 attached to the contact part 43 is arranged between the upper support part 432 and the lower support part 433. A spring 435 surrounding the periphery of the contact portion 43 is provided between the disc portion 434 and the upper support portion 432. The disk portion 434 and the contact portion 43 are urged downward by the spring 435. In a state where the top plate 123 is located at the separated position and the disc portion 434 is in contact with the upper surface of the lower support portion 433 as indicated by a two-dot chain line in FIG. 12, the inclination angle of the bar 45 with respect to the vertical direction is small. Thus, the claw portion 41 is separated from the edge of the substrate 9 to the outside.
 支持部ベース142の上面には、上方に突出する係合部241aが設けられており、トッププレート123が連結位置に位置する際には、当接部収容部431から下方に突出する当接部43の下端部が、係合部241aの上部の凹部242aに嵌る。これにより、トッププレート123が基板支持部141と連結される。また、図12中に実線にて示すように、係合部241aの上面が当接部収容部431の下面と当接するまで、基板支持部141により当接部43が上方に押し込まれる。これにより、バー45の下端部が基板9に近づくようにバー45が傾斜し、爪部41が基板9のエッジに当接する。実際には、基板9の外縁に沿って配列される複数の爪部41に対して複数の当接部43に作用する力がそれぞれ伝達され、複数の爪部41により基板9のエッジの異なる部位が中心軸J1に向けて押される。このようにして、図12に示すチャック部4bでは、連結位置に配置されるトッププレート123の重量を利用して、基板9を回転中心に対して位置合わせしつつ保持することが実現される。なお、基板9の上面91から飛散する処理液が、爪部に接続する伝達機構の構成要素にて跳ね返って上面91に付着することを防止するという観点では、チャック部は基板支持部141に設けられることが好ましい。 An engaging portion 241a that protrudes upward is provided on the upper surface of the support portion base 142, and when the top plate 123 is located at the coupling position, the abutting portion that protrudes downward from the abutting portion accommodating portion 431. The lower end portion of 43 fits into the recess 242a at the top of the engaging portion 241a. As a result, the top plate 123 is connected to the substrate support portion 141. Further, as indicated by a solid line in FIG. 12, the contact portion 43 is pushed upward by the substrate support portion 141 until the upper surface of the engagement portion 241 a contacts the lower surface of the contact portion accommodating portion 431. Thereby, the bar 45 is inclined so that the lower end portion of the bar 45 approaches the substrate 9, and the claw portion 41 comes into contact with the edge of the substrate 9. Actually, the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41 arranged along the outer edge of the substrate 9, respectively, and the plurality of claw portions 41 are different parts of the edge of the substrate 9. Is pushed toward the central axis J1. In this way, in the chuck portion 4b shown in FIG. 12, it is possible to hold the substrate 9 while aligning it with the center of rotation using the weight of the top plate 123 arranged at the connection position. In addition, the chuck part is provided in the substrate support part 141 from the viewpoint of preventing the processing liquid splashed from the upper surface 91 of the substrate 9 from splashing and adhering to the upper surface 91 by the components of the transmission mechanism connected to the claw part. It is preferred that
 上記基板処理装置1では様々な変形が可能である。 The substrate processing apparatus 1 can be variously modified.
 当接部に作用する力を複数の爪部に伝達する伝達機構として、上記以外の様々な構造が採用されてよい。例えば、図9の伝達機構42aにおいて、シャフト46におけるシャフト47側の端部におねじが形成され、シャフト47に設けられためねじと螺合してもよい。この場合、当接部43が上下方向に移動することにより、シャフト46が中心軸J2を中心として回転し、シャフト47が基板9の上面91に沿う方向(図9の左右方向)に直線的に移動する。また、伝達機構は、各爪部に対して設けられる当接部43に作用する力を当該爪部のみに伝達する構造以外に、1つまたは複数の当接部43に作用する力を連動して複数の爪部に伝達する構造であってよい。 Various structures other than those described above may be employed as a transmission mechanism that transmits the force acting on the contact portion to the plurality of claw portions. For example, in the transmission mechanism 42 a of FIG. 9, a screw may be formed at an end portion of the shaft 46 on the shaft 47 side, and the screw may be screwed into the shaft 47 because it is provided on the shaft 47. In this case, when the contact portion 43 moves in the vertical direction, the shaft 46 rotates about the central axis J2, and the shaft 47 linearly extends in the direction along the upper surface 91 of the substrate 9 (left-right direction in FIG. 9). Moving. Further, the transmission mechanism interlocks the force acting on one or a plurality of contact portions 43 in addition to the structure that transmits the force acting on the contact portion 43 provided for each claw portion only to the claw portion. And a structure for transmitting to a plurality of claws.
 基板支持部141に支持される基板9の大きさが変動する場合に、連結位置におけるトッププレート123と基板9との間の距離が一定となるように弾性変形する弾性部材は、伝達機構における当接部43以外に設けられてよい。また、基板9の大きさによって、連結位置におけるトッププレート123と基板9との間の距離が僅かに変動することが許容される場合には、伝達機構において上記弾性部材が省略されてよい。 When the size of the substrate 9 supported by the substrate support portion 141 varies, the elastic member that is elastically deformed so that the distance between the top plate 123 and the substrate 9 at the connection position is constant is the contact of the transmission mechanism. It may be provided other than the contact part 43. When the distance between the top plate 123 and the substrate 9 at the coupling position is allowed to slightly vary depending on the size of the substrate 9, the elastic member may be omitted from the transmission mechanism.
 上記実施の形態では、密閉空間開閉機構であるチャンバ開閉機構131が、上面対向部であるトッププレート123を支持する対向部支持機構(の一部)を兼ねることにより、基板処理装置1の構造が簡素化されるが、基板処理装置1の設計によっては、対向部支持機構がチャンバ開閉機構131とは個別に設けられてよい。 In the above-described embodiment, the chamber opening / closing mechanism 131 that is a sealed space opening / closing mechanism also serves as (a part of) the opposed portion support mechanism that supports the top plate 123 that is the upper surface opposed portion, whereby the structure of the substrate processing apparatus 1 is configured. Although simplified, depending on the design of the substrate processing apparatus 1, the facing portion support mechanism may be provided separately from the chamber opening / closing mechanism 131.
 図13に示す例では、トッププレート123を上下方向に移動するトッププレート移動機構126が対向部支持機構として設けられる。トッププレート移動機構126は、第1磁石261と、第2磁石262と、磁石移動機構263とを備える。第1磁石261および第2磁石262はそれぞれ、中心軸J1を中心とする略円環状である。トッププレート123の上面には、非磁性体により形成される筒状のトッププレート軸部235が設けられ、第1磁石261は、トッププレート軸部235の内部において、トッププレート軸部235の外周面に沿うように配置される。第2磁石262は、チャンバ蓋部122に形成された環状孔264内にて、トッププレート軸部235の周囲を囲むように配置される。第2磁石262は、磁石移動機構263により、環状孔264内において上下方向に移動する。これにより、トッププレート123が基板支持部141に対して上方に離間する離間位置と、基板支持部141と連結する連結位置との間で、基板支持部141に対して相対的に移動することが可能となる。 In the example shown in FIG. 13, a top plate moving mechanism 126 that moves the top plate 123 in the vertical direction is provided as an opposing portion supporting mechanism. The top plate moving mechanism 126 includes a first magnet 261, a second magnet 262, and a magnet moving mechanism 263. Each of the first magnet 261 and the second magnet 262 has a substantially annular shape centered on the central axis J1. A cylindrical top plate shaft portion 235 formed of a non-magnetic material is provided on the top surface of the top plate 123, and the first magnet 261 is an outer peripheral surface of the top plate shaft portion 235 inside the top plate shaft portion 235. It is arranged along. The second magnet 262 is disposed so as to surround the top plate shaft portion 235 in the annular hole 264 formed in the chamber lid portion 122. The second magnet 262 moves up and down in the annular hole 264 by the magnet moving mechanism 263. As a result, the top plate 123 can move relative to the substrate support portion 141 between a separation position where the top plate 123 is spaced upward with respect to the substrate support portion 141 and a connection position where the top plate 123 is connected to the substrate support portion 141. It becomes possible.
 また、チャンバ開閉機構131により、チャンバ蓋部122がチャンバ本体121に対して相対的に昇降すればよく、位置が固定されたチャンバ蓋部122に対してチャンバ本体121が昇降してもよい。この場合も、チャンバ本体121を上昇してチャンバ本体121の上端部をチャンバ蓋部122に近接または当接させることにより、トッププレート123がチャンバ蓋部122と非接触状態となり、連結位置に配置される(図5または図7参照)。また、チャンバ本体121を下降してチャンバ蓋部122から離間させることにより、トッププレート123がチャンバ本体121の上方に位置するチャンバ蓋部122の一部から吊り下がりつつ離間位置に配置される(図1参照)。以上のように、トッププレート123を離間位置と連結位置とに選択的に配置する対向部支持機構は様々な構造にて実現可能である。 Further, the chamber opening / closing mechanism 131 may raise and lower the chamber lid 122 relative to the chamber main body 121, and the chamber main body 121 may move up and down relative to the chamber lid 122 whose position is fixed. Also in this case, the chamber main body 121 is raised and the upper end portion of the chamber main body 121 is brought close to or in contact with the chamber lid portion 122, so that the top plate 123 is brought into a non-contact state with the chamber lid portion 122 and disposed at the coupling position. (See FIG. 5 or FIG. 7). Further, the chamber main body 121 is lowered and separated from the chamber lid portion 122, so that the top plate 123 is suspended from a part of the chamber lid portion 122 located above the chamber main body 121 and arranged at the separation position (see FIG. 1). As described above, the opposed portion support mechanism that selectively arranges the top plate 123 at the separation position and the connection position can be realized by various structures.
 基板処理装置1では、基板9の上面91の外縁部のみに対向する円環板状の部材が上面対向部として設けられてよい。この場合も、回転する基板9に処理液を供給する処理において、基板9の外縁部から飛散する処理液がチャンバ12の内壁にて跳ね返って基板9の上面91に再付着することが、連結位置に配置された上記円環板状の部材により防止される。このように、基板処理装置1では、基板9の上面91の少なくとも外縁部に対向する上面対向部が設けられる。 In the substrate processing apparatus 1, an annular plate-like member facing only the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface facing portion. Also in this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid splashing from the outer edge of the substrate 9 rebounds on the inner wall of the chamber 12 and reattaches to the upper surface 91 of the substrate 9. This is prevented by the annular plate-like member disposed in the frame. As described above, the substrate processing apparatus 1 is provided with the upper surface facing portion facing at least the outer edge portion of the upper surface 91 of the substrate 9.
 基板回転機構15のステータ部151およびロータ部152の形状および構造は、様々に変更されてよい。例えば、ロータ部152の内側(中心軸J1側)にステータ部151が設けられてもよい。ロータ部152は、必ずしも浮遊状態にて回転する必要はなく、チャンバ12内にロータ部152を機械的に支持するガイド等の構造が設けられ、当該ガイドに沿ってロータ部152が回転してもよい。また、基板回転機構15は、必ずしも中空モータである必要はなく、例えば、円板状の基板支持部141の下面に固定された軸を回転する基板回転機構が利用されてもよい。 The shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed. For example, the stator part 151 may be provided inside the rotor part 152 (center axis J1 side). The rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good. Further, the substrate rotation mechanism 15 is not necessarily a hollow motor. For example, a substrate rotation mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate support 141 may be used.
 上記基板処理装置1では、基板支持部141、基板回転機構15のロータ部152、トッププレート123およびチャック部4,4a,4bが、密閉空間形成部であるチャンバ12内に設けられ、密閉された内部空間にて基板9に対する処理が行われるが、基板処理装置の設計によっては、開放された空間にて基板9に対する処理が行われてよい。 In the substrate processing apparatus 1, the substrate support 141, the rotor 152 of the substrate rotation mechanism 15, the top plate 123, and the chucks 4, 4 a and 4 b are provided in the chamber 12 which is a sealed space forming unit and sealed. The processing for the substrate 9 is performed in the internal space, but depending on the design of the substrate processing apparatus, the processing for the substrate 9 may be performed in the open space.
 基板処理装置1にて処理される基板は半導体基板には限定されず、ガラス基板や他の基板であってもよい。 The substrate processed by the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.
 図14は、本発明の第2の実施の形態に係る基板処理装置1aを示す断面図である。基板処理装置1aの基本構造は、図1の基板処理装置1と同様であり(図2の気液供給部18および気液排出部19を含む。)、同様の構成に同符号を付す。以下の基板処理装置1aの構造の説明では、主として基板処理装置1との相違点について述べる。 FIG. 14 is a sectional view showing a substrate processing apparatus 1a according to the second embodiment of the present invention. The basic structure of the substrate processing apparatus 1a is the same as that of the substrate processing apparatus 1 of FIG. 1 (including the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 of FIG. 2), and the same reference numerals are given to the same configurations. In the following description of the structure of the substrate processing apparatus 1a, differences from the substrate processing apparatus 1 will be mainly described.
 図14の基板処理装置1aにおける支持部ベース142の上面には、上方に向かって突出する複数の係合ピン140が設けられ、複数の係合ピン140は周方向に配列される。既述のように、各係合部241の下部には上方に向かって窪む凹部が設けられ、後述するように、係合ピン140が当該凹部に挿入される。実際には、係合ピン140および係合部241は、複数の爪部41とは周方向において異なる位置に配置される。係合ピン140および係合部241の組合せの個数は、好ましくは3以上である。 14 is provided with a plurality of engaging pins 140 protruding upward, and the plurality of engaging pins 140 are arranged in the circumferential direction. As described above, a concave portion that is recessed upward is provided in the lower portion of each engaging portion 241, and the engaging pin 140 is inserted into the concave portion as will be described later. Actually, the engaging pin 140 and the engaging portion 241 are arranged at different positions in the circumferential direction from the plurality of claw portions 41. The number of combinations of the engagement pin 140 and the engagement portion 241 is preferably 3 or more.
 ロータ部152の上部には、上下方向に伸びる棒状の複数の接続部材52が設けられ、複数の接続部材52によりロータ部152が基板支持部141の支持部ベース142と接続される。複数の接続部材52は、好ましくは周方向に等角度間隔にて配列される。 A plurality of rod-like connection members 52 extending in the vertical direction are provided on the upper portion of the rotor portion 152, and the rotor portion 152 is connected to the support portion base 142 of the substrate support portion 141 by the plurality of connection members 52. The plurality of connection members 52 are preferably arranged at equiangular intervals in the circumferential direction.
 ロータ部152と基板支持部141との間には、中心軸J1を中心とする環状の錘部51が設けられる。錘部51には上下方向に貫通する複数の貫通孔511(図15参照)が設けられる。複数の貫通孔511には、上述の複数の接続部材52がそれぞれ挿入される。錘部51の各貫通孔511の内周面が接続部材52の外周面と摺動しつつ、錘部51は接続部材52に沿って上下方向に移動可能である。複数の接続部材52は、基板支持部141と、基板支持部141の下方に配置されたロータ部152との間において、錘部51の上下方向の移動を案内するガイド部である。 Between the rotor part 152 and the board | substrate support part 141, the cyclic | annular weight part 51 centering on the central axis J1 is provided. The weight portion 51 is provided with a plurality of through holes 511 (see FIG. 15) penetrating in the vertical direction. The plurality of connection members 52 described above are inserted into the plurality of through holes 511, respectively. The weight 51 can move in the vertical direction along the connecting member 52 while the inner peripheral surface of each through hole 511 of the weight 51 slides on the outer peripheral surface of the connecting member 52. The plurality of connection members 52 are guide portions that guide the vertical movement of the weight portion 51 between the substrate support portion 141 and the rotor portion 152 disposed below the substrate support portion 141.
 図15は、チャック部4および錘支持機構53の構成を示す図であり、図14において支持部ベース142を示す左側の断面の近傍を拡大して示している。既述のように、チャック部4は基板支持部141に設けられ、チャック部4の一部は、中心軸J1を中心とする円環状の支持部ベース142の内部に設けられる。図15では、チャンバ本体121、錘部51、支持部ベース142、並びに、後述の連結部支持部492およびベローズ493については、中心軸J1を含む面による断面を示している(図16、図19および図23において同様)。チャック部4は、既述の複数の爪部41と、伝達機構42とを備える。既述のように、複数の爪部41は、複数の支持ピン144により支持された基板9の周囲にて周方向に配列される。複数の爪部41の個数は少なくとも3個であり、当該少なくとも3個の爪部41のうち周方向に隣接する2つの爪部41の各組合せでは、当該2つの爪部41と中心軸J1とを結ぶ線がなす角度は180度未満である。当該少なくとも3個の爪部41は、周方向に等角度間隔にて設けられることが好ましい。本実施の形態では、4個の爪部41が周方向に等角度間隔にて設けられる。 FIG. 15 is a diagram showing the configuration of the chuck portion 4 and the weight support mechanism 53, and shows an enlarged vicinity of the left cross section showing the support portion base 142 in FIG. As described above, the chuck portion 4 is provided on the substrate support portion 141, and a part of the chuck portion 4 is provided inside an annular support portion base 142 centered on the central axis J <b> 1. In FIG. 15, the chamber body 121, the weight portion 51, the support portion base 142, and a connecting portion support portion 492 and a bellows 493 to be described later are shown in a cross section by a plane including the central axis J <b> 1 (FIGS. 16 and 19). And the same in FIG. 23). The chuck portion 4 includes the plurality of claw portions 41 and the transmission mechanism 42 described above. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144. The number of the plurality of claw portions 41 is at least 3, and in each combination of two claw portions 41 adjacent in the circumferential direction among the at least three claw portions 41, the two claw portions 41 and the central axis J1 The angle formed by the line connecting the two is less than 180 degrees. The at least three claw portions 41 are preferably provided at equiangular intervals in the circumferential direction. In the present embodiment, four claw portions 41 are provided at equiangular intervals in the circumferential direction.
 伝達機構42は、各爪部41に対して設けられる連結部49および複数のバー44,45を備える。連結部49は、上下方向に伸びる棒部材であり、支持部ベース142の下面に設けられる円筒状の連結部支持部492により上下方向に移動可能に支持される。連結部49の下端部は、錘部51に接続される。連結部支持部492の下端面には略筒状のベローズ493が設けられる。ベローズ493は、気体や液体を通過させない材料にて形成される。ベローズ493と連結部49との接続部、ベローズ493と連結部支持部492との接続部、並びに、連結部支持部492と支持部ベース142との接続部はシールされており、気体や液体の通過が防止される。 The transmission mechanism 42 includes a connecting portion 49 provided for each claw portion 41 and a plurality of bars 44 and 45. The connecting portion 49 is a bar member extending in the vertical direction, and is supported by a cylindrical connecting portion support portion 492 provided on the lower surface of the support portion base 142 so as to be movable in the vertical direction. A lower end portion of the connecting portion 49 is connected to the weight portion 51. A substantially cylindrical bellows 493 is provided on the lower end surface of the connecting portion support portion 492. The bellows 493 is formed of a material that does not allow the passage of gas or liquid. The connecting portion between the bellows 493 and the connecting portion 49, the connecting portion between the bellows 493 and the connecting portion supporting portion 492, and the connecting portion between the connecting portion supporting portion 492 and the supporting portion base 142 are sealed, and gas or liquid Passage is prevented.
 連結部49の上端部は、支持部ベース142に形成された内部空間143に配置される。当該内部空間143にはバー44が配置され、バー44の一方の端部が連結部49の上端部にピン421を介して接続される。バー44には、バー44の長手方向に伸びる長孔441が形成され、ピン421は、長孔441に挿入される。バー44は、内部空間143に設けられたバー支持部440により、図15の紙面に垂直な回転軸を中心として回転可能に支持される。 The upper end portion of the connecting portion 49 is disposed in an internal space 143 formed in the support portion base 142. A bar 44 is disposed in the internal space 143, and one end of the bar 44 is connected to the upper end of the connecting portion 49 via a pin 421. A long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441. The bar 44 is supported by a bar support portion 440 provided in the internal space 143 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
 バー44の他方の端部は、上下方向におよそ沿うもう1つのバー45の下端部にピン422を介して接続される。バー45には、バー45の長手方向に伸びる長孔451が形成され、ピン422は、長孔451に挿入される。支持部ベース142の上面には、内部空間143と連絡する連絡孔145が設けられ、バー45は連絡孔145に挿入される。バー45は、連絡孔145の周囲に固定されたバー支持部450により、図15の紙面に垂直な回転軸を中心として回転可能に支持される。バー45において、バー支持部450よりも上側の部分は支持部ベース142の内部空間143の外側に配置され、その周囲が略筒状のベローズ423により覆われる。バー45の上端部には爪部41が取り付けられる。ベローズ423は、気体や液体を通過させない材料にて形成される。ベローズ423と爪部41との接続部、ベローズ423とバー支持部450との接続部、並びに、バー支持部450と支持部ベース142との接続部はシールされており、気体や液体の通過が防止される。 The other end of the bar 44 is connected via a pin 422 to the lower end of another bar 45 that extends approximately in the vertical direction. A long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451. A communication hole 145 that communicates with the internal space 143 is provided on the upper surface of the support base 142, and the bar 45 is inserted into the communication hole 145. The bar 45 is supported by a bar support portion 450 fixed around the communication hole 145 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG. In the bar 45, a portion above the bar support portion 450 is disposed outside the internal space 143 of the support portion base 142, and the periphery thereof is covered with a substantially cylindrical bellows 423. A claw portion 41 is attached to the upper end portion of the bar 45. The bellows 423 is formed of a material that does not allow the passage of gas or liquid. The connection part between the bellows 423 and the claw part 41, the connection part between the bellows 423 and the bar support part 450, and the connection part between the bar support part 450 and the support part base 142 are sealed, and the passage of gas or liquid is prevented. Is prevented.
 図15に示すように、チャンバ側壁部214には、下部環状空間217に向かって開口する凹部218が設けられており、凹部218には錘支持機構53が設けられる。錘支持機構53は、エアシリンダ531を備え、エアシリンダ531のピストンロッド532の先端には支持部材533が取り付けられる。支持部材533の先端面(中心軸J1側の面)534は、上方に向かうに従って中心軸J1から離れる傾斜面である。エアシリンダ531の本体と支持部材533との間にはピストンロッド532を囲むようにベローズ535が設けられる。ベローズ535は、気体や液体を通過させない材料にて形成され、エアシリンダ531の内部への気体や液体の浸入が防止される。エアシリンダ531がピストンロッド532を押し出した状態では、錘部51の外縁部が支持部材533により下側から支持されて、錘部51が図15に示す位置(以下、「支持位置」という。)に配置される。支持位置に位置する錘部51により、連結部49は上方に押し上げられている。したがって、バー44のバー45側の端部が、連結部49側の端部よりも下側に位置し、バー45が上下方向に沿っておよそ直立する。これにより、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間した位置に配置される。伝達機構42が含む上記構成は、複数の爪部41のそれぞれに対して設けられる。錘支持機構53は、モータ等を有するものであってもよい。 As shown in FIG. 15, the chamber side wall 214 is provided with a recess 218 that opens toward the lower annular space 217, and the recess 218 is provided with a weight support mechanism 53. The weight support mechanism 53 includes an air cylinder 531, and a support member 533 is attached to the tip of the piston rod 532 of the air cylinder 531. The front end surface (surface on the central axis J1 side) 534 of the support member 533 is an inclined surface that is separated from the central axis J1 as it goes upward. A bellows 535 is provided between the main body of the air cylinder 531 and the support member 533 so as to surround the piston rod 532. The bellows 535 is formed of a material that does not allow gas or liquid to pass therethrough, and prevents the gas or liquid from entering the air cylinder 531. In a state where the air cylinder 531 pushes out the piston rod 532, the outer edge portion of the weight portion 51 is supported from below by the support member 533, and the weight portion 51 is a position shown in FIG. 15 (hereinafter referred to as “support position”). Placed in. The connecting portion 49 is pushed upward by the weight portion 51 located at the support position. Therefore, the end of the bar 44 on the bar 45 side is located below the end of the connecting part 49, and the bar 45 is substantially upright along the vertical direction. Thereby, the nail | claw part 41 is arrange | positioned in the position spaced apart from the edge of the board | substrate 9 on the outer side (on the opposite side to the central axis J1). The configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41. The weight support mechanism 53 may have a motor or the like.
 次に、基板処理装置1aにおける基板9の処理の流れについて図4を参照して説明する。基板処理装置1aでは、図14に示すように、チャンバ蓋部122がチャンバ本体121から離間して上方に位置し、カップ部161がチャンバ蓋部122から離間して下方に位置する状態にて、基板9が外部の搬送機構によりチャンバ12内に搬入され、基板支持部141により下側から支持される(ステップS10)。以下、図14に示すチャンバ12およびカップ部161の状態を「オープン状態」と呼ぶ。チャンバ蓋部122とチャンバ側壁部214との間の開口は、中心軸J1を中心とする環状であり、以下、「環状開口81」という。基板処理装置1aでは、チャンバ蓋部122がチャンバ本体121から離間することにより、基板9の周囲(すなわち、径方向外側)に環状開口81が形成される。ステップS10では、基板9は環状開口81を介して搬入される。 Next, the flow of processing of the substrate 9 in the substrate processing apparatus 1a will be described with reference to FIG. In the substrate processing apparatus 1a, as shown in FIG. 14, in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and positioned above, and the cup part 161 is spaced apart from the chamber lid part 122 and positioned below. The substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support 141 (step S10). Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 14 is referred to as an “open state”. The opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”. In the substrate processing apparatus 1a, the chamber lid 122 is separated from the chamber main body 121, whereby an annular opening 81 is formed around the substrate 9 (that is, radially outside). In step S <b> 10, the substrate 9 is carried in via the annular opening 81.
 基板9が搬入されると、図15に示す錘支持機構53のエアシリンダ531が、ピストンロッド532をゆっくりと引き込むことにより、図16に示すように、支持部材533がチャンバ側壁部214の凹部218内に移動する。これにより、支持部材533の先端面534が錘部51の外縁部から離間し、錘支持機構53による錘部51の支持が解除される。連結部49および錘部51は、図16中に二点鎖線にて示す支持位置から下降する。バー44のバー45側の端部は、連結部49側の端部よりも上側に移動し、バー45の上端部が基板9に近づくようにバー45が傾斜する。これにより、爪部41が支持ピン144上の基板9のエッジ(側面)に当接し、当該エッジが爪部41により中心軸J1に向けて押される。実際には、複数の連結部49に作用する力が複数の爪部41にそれぞれ伝達され、周方向に配列された複数の爪部41により基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。その結果、基板9の中心を中心軸J1上に配置しつつ、チャック部4により基板9が強固に保持される(ステップS11)。このとき、複数の爪部41が基板9のエッジと当接することにより、錘部51の下方への移動が制限され、錘部51は、図16中に実線にて示す位置(以下、「支持解除位置」という。)に配置される。 When the substrate 9 is carried in, the air cylinder 531 of the weight support mechanism 53 shown in FIG. 15 draws the piston rod 532 slowly, so that the support member 533 is recessed 218 of the chamber side wall 214 as shown in FIG. Move in. Thereby, the front end surface 534 of the support member 533 is separated from the outer edge portion of the weight portion 51, and the support of the weight portion 51 by the weight support mechanism 53 is released. The connecting portion 49 and the weight portion 51 descend from the support position indicated by the two-dot chain line in FIG. The end of the bar 44 on the bar 45 side moves to the upper side of the end on the connecting part 49 side, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9. As a result, the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1. Actually, the forces acting on the plurality of connecting portions 49 are transmitted to the plurality of claw portions 41, respectively, and the different portions of the edge of the substrate 9 are centered by substantially the same force by the plurality of claw portions 41 arranged in the circumferential direction. It is pushed toward the axis J1. As a result, the substrate 9 is firmly held by the chuck portion 4 while the center of the substrate 9 is disposed on the central axis J1 (step S11). At this time, the plurality of claws 41 abut against the edge of the substrate 9 to restrict the downward movement of the weight 51, and the weight 51 is located at a position indicated by a solid line in FIG. It is referred to as “release position”.
 続いて、チャンバ開閉機構131によりチャンバ蓋部122が図14に示す位置から図17に示す位置(チャンバ本体121に近接する位置)まで下降する。また、カップ部161が、図14に示す位置から図17に示す位置まで上昇し、環状開口81の径方向外側に全周に亘って位置する。以下の説明では、図17に示すチャンバ12およびカップ部161の状態を「第1密閉状態」という。また、図17に示すカップ部161の位置を「液受け位置」といい、図14に示すカップ部161の位置を「退避位置」という。カップ部移動機構162は、カップ部161を、環状開口81の径方向外側の液受け位置と、液受け位置よりも下方の退避位置との間で上下方向に移動する。 Subsequently, the chamber opening / closing mechanism 131 lowers the chamber lid 122 from the position shown in FIG. 14 to the position shown in FIG. 17 (position close to the chamber body 121). Further, the cup portion 161 rises from the position shown in FIG. 14 to the position shown in FIG. 17 and is located over the entire circumference on the radially outer side of the annular opening 81. In the following description, the state of the chamber 12 and the cup part 161 shown in FIG. 17 is referred to as a “first sealed state”. 17 is referred to as a “liquid receiving position”, and the position of the cup 161 illustrated in FIG. 14 is referred to as a “retracted position”. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.
 液受け位置に位置するカップ部161では、側壁部611が、環状開口81と径方向に対向する。また、上面部612の内縁部の上面が、チャンバ蓋部122の外縁部下端のリップシール232に全周に亘って接する。チャンバ蓋部122とカップ部161の上面部612との間には、気体や液体の通過を防止するシール部が形成される。これにより、チャンバ本体121、チャンバ蓋部122、カップ部161およびカップ対向部163により囲まれる密閉された空間(以下、「拡大密閉空間100」という。)が形成される。拡大密閉空間100は、チャンバ蓋部122とチャンバ本体121との間のチャンバ空間120と、カップ部161とカップ対向部163とに囲まれる側方空間160とが、環状開口81を介して連通することにより形成された1つの空間である。 In the cup portion 161 located at the liquid receiving position, the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber cover part 122 and the upper surface part 612 of the cup part 161, the seal part which prevents passage of gas and a liquid is formed. Thereby, a sealed space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163 is formed. In the enlarged sealed space 100, the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this.
 また、第1密閉状態では、トッププレート123の各係合部241の下部の凹部に、支持部ベース142から上方に突出する係合ピン140の上端部が嵌る。これにより、トッププレート123が、基板支持部141の支持部ベース142と連結される。言い換えると、トッププレート123の基板支持部141に対する回転方向(周方向)における相対位置が固定される。以下の説明では、トッププレート123が基板支持部141と連結する位置を「連結位置」という。チャンバ蓋部122が下降する際には、係合部241と係合ピン140とが嵌り合うように、基板回転機構15により支持部ベース142の回転位置が制御される。実際には、各係合ピン140の上端面、および、当該上端面に対向する係合部241の凹部内の面には、磁石が設けられ、これらの磁石の間に働く磁力(引力)により、係合部241と係合ピン140とが強固に結合される。 Further, in the first sealed state, the upper end portion of the engagement pin 140 protruding upward from the support portion base 142 is fitted into the concave portion below each engagement portion 241 of the top plate 123. As a result, the top plate 123 is connected to the support base 142 of the substrate support 141. In other words, the relative position in the rotation direction (circumferential direction) of the top plate 123 with respect to the substrate support 141 is fixed. In the following description, a position where the top plate 123 is connected to the substrate support portion 141 is referred to as a “connection position”. When the chamber lid part 122 moves down, the rotation position of the support part base 142 is controlled by the substrate rotation mechanism 15 so that the engagement part 241 and the engagement pin 140 are fitted. Actually, magnets are provided on the upper end surface of each engagement pin 140 and the surface in the concave portion of the engagement portion 241 facing the upper end surface, and a magnetic force (attraction) acting between these magnets is provided. The engaging portion 241 and the engaging pin 140 are firmly coupled.
 このとき、被支持部237のフランジ部239が、プレート支持部222のフランジ部224の上方に離間しており、プレート支持部222と被支持部237とは接触しない。換言すると、プレート支持部222によるトッププレート123の支持、すなわち、チャンバ開閉機構131による間接的なトッププレート123の支持が解除されている。このため、トッププレート123は、チャンバ蓋部122から独立して、基板保持部14および基板保持部14に保持された基板9と共に、基板回転機構15により回転可能である。 At this time, the flange portion 239 of the supported portion 237 is spaced above the flange portion 224 of the plate support portion 222, and the plate support portion 222 and the supported portion 237 are not in contact with each other. In other words, the support of the top plate 123 by the plate support part 222, that is, the indirect support of the top plate 123 by the chamber opening / closing mechanism 131 is released. For this reason, the top plate 123 can be rotated by the substrate rotating mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.
 続いて、基板回転機構15により一定の回転数(比較的低い回転数であり、以下、「定常回転数」という。)での基板9の回転が開始される。また、不活性ガス供給部186(図2参照)から拡大密閉空間100への不活性ガス(ここでは、窒素ガス)の供給が開始されるとともに、外側排気部194による拡大密閉空間100内のガスの排出が開始される。これにより、所定時間経過後に、拡大密閉空間100が、不活性ガスが充填された不活性ガス充填状態(すなわち、酸素濃度が低い低酸素雰囲気)となる。なお、拡大密閉空間100への不活性ガスの供給、および、拡大密閉空間100内のガスの排出は、図14に示すオープン状態から行われていてもよい。 Subsequently, the substrate rotation mechanism 15 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”). In addition, the supply of the inert gas (here, nitrogen gas) from the inert gas supply unit 186 (see FIG. 2) to the expanded sealed space 100 is started, and the gas in the expanded sealed space 100 by the outer exhaust unit 194 is started. Starts to be discharged. As a result, after a predetermined time has elapsed, the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration). The supply of the inert gas to the expanded sealed space 100 and the discharge of the gas in the expanded sealed space 100 may be performed from the open state shown in FIG.
 次に、回転する基板9の下面92に向けて、複数の加熱ガス供給ノズル180から、加熱したガスが噴出される。これにより、基板9が加熱される。そして、上部ノズル181から、基板9の上面91の中央部に向けて薬液の供給が開始される(ステップS12)。ステップS12における薬液の供給に係る動作は、上記第1の実施の形態と同様である。 Next, heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. And supply of a chemical | medical solution is started toward the center part of the upper surface 91 of the board | substrate 9 from the upper nozzle 181 (step S12). The operation related to the supply of the chemical solution in step S12 is the same as that in the first embodiment.
 続いて、チャンバ蓋部122およびカップ部161が同期して下方へと移動する。そして、図18に示すように、チャンバ蓋部122の外縁部下端のリップシール231が、チャンバ側壁部214の上部と接することにより、環状開口81が閉じられ、チャンバ空間120が、側方空間160と隔絶された状態で密閉される。カップ部161は、図14と同様に、退避位置に位置する。以下、図18に示すチャンバ12およびカップ部161の状態を「第2密閉状態」という。第2密閉状態では、基板9は、チャンバ12の内壁と直接対向し、これらの間に他の液受け部は存在しない。 Subsequently, the chamber lid part 122 and the cup part 161 move downward in synchronization. Then, as shown in FIG. 18, the lip seal 231 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160. And sealed in an isolated state. The cup portion 161 is located at the retracted position as in FIG. Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 18 is referred to as a “second sealed state”. In the second sealed state, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.
 第2密閉状態でも、第1密閉状態と同様に、チャック部4の複数の爪部41が基板9のエッジを中心軸J1に向けて押すことにより、基板9が強固に保持されている。また、プレート支持部222によるトッププレート123の保持が解除されており、トッププレート123は、チャンバ蓋部122から独立して、基板保持部14および基板9と共に回転する。 Even in the second sealed state, similarly to the first sealed state, the plurality of claws 41 of the chuck portion 4 push the edge of the substrate 9 toward the central axis J1, whereby the substrate 9 is firmly held. Further, the holding of the top plate 123 by the plate support unit 222 is released, and the top plate 123 rotates together with the substrate holding unit 14 and the substrate 9 independently of the chamber lid unit 122.
 チャンバ空間120が密閉されると、外側排気部194(図2参照)によるガスの排出が停止されるとともに、内側排気部198によるチャンバ空間120内のガスの排出が開始される。そして、基板9への純水の供給が、純水供給部184により開始される(ステップS13)。ステップS13における純水の供給に係る動作は、上記第1の実施の形態と同様である。 When the chamber space 120 is sealed, gas discharge by the outer exhaust unit 194 (see FIG. 2) is stopped and gas discharge from the chamber space 120 by the inner exhaust unit 198 is started. Then, the supply of pure water to the substrate 9 is started by the pure water supply unit 184 (step S13). The operation related to the supply of pure water in step S13 is the same as that in the first embodiment.
 純水の供給開始から所定時間経過すると、純水供給部184からの純水の供給が停止される。そして、複数の加熱ガス供給ノズル180から、基板9の下面92に向けて、加熱したガスが噴出される。これにより、基板9が加熱される。また、加熱ガス供給ノズル180からの加熱ガスの噴出が継続された状態で、基板9の回転数が定常回転数よりも十分に高くされる。これにより、純水が基板9上から除去され、基板9の乾燥処理が行われる(ステップS14)。基板9の乾燥開始から所定時間経過すると、基板9の回転が停止する。なお、基板9の乾燥処理の前に、上部ノズル181から基板9の上面91上にIPAが供給され、上面91上において純水がIPAに置換されてよい。また、基板9の乾燥処理は、内側排気部198によりチャンバ空間120が減圧され、大気圧よりも低い減圧雰囲気にて行われてもよい。 When a predetermined time has elapsed from the start of supplying pure water, the supply of pure water from the pure water supply unit 184 is stopped. The heated gas is ejected from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the substrate 9. Thereby, the substrate 9 is heated. Further, the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the heating gas is continuously ejected from the heating gas supply nozzle 180. As a result, pure water is removed from the substrate 9, and the substrate 9 is dried (step S14). When a predetermined time has elapsed from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. Prior to the drying process of the substrate 9, IPA may be supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed in a reduced pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.
 その後、チャンバ蓋部122が上昇することにより、図14に示すように、チャンバ12がオープン状態となり、トッププレート123が基板支持部141に対して離間位置に配置される。ステップS14では、トッププレート123が基板支持部141と共に回転するため、トッププレート123の下面に液体はほとんど残存せず、チャンバ蓋部122の上昇時にトッププレート123から液体が基板9上に落下することはない。 Thereafter, as the chamber lid part 122 is raised, the chamber 12 is opened as shown in FIG. 14, and the top plate 123 is arranged at a separated position with respect to the substrate support part 141. In step S14, since the top plate 123 rotates together with the substrate support 141, almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no.
 また、図16に示す錘支持機構53のエアシリンダ531が、ピストンロッド532をゆっくりと押し出すことにより、支持部材533の先端面534が錘部51の外縁部と当接し、さらに先端面534に沿って錘部51を上方に押し上げる。これにより、錘部51および連結部49が図15に示す位置に配置され、バー45が上下方向に沿っておよそ直立し、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間する。すなわち、チャック部4による基板9の保持が解除される(ステップS15)。その後、基板9は外部の搬送機構によりチャンバ12から搬出され(ステップS16)、基板処理装置1aによる基板9に対する処理が完了する。実際には、上記ステップS10~S16の処理は、他の基板9に対して繰り返される。 Further, the air cylinder 531 of the weight support mechanism 53 shown in FIG. 16 slowly pushes the piston rod 532, so that the front end surface 534 of the support member 533 comes into contact with the outer edge portion of the weight portion 51, and further along the front end surface 534. The weight 51 is pushed upward. Accordingly, the weight portion 51 and the connecting portion 49 are arranged at the positions shown in FIG. 15, the bar 45 is substantially upright along the vertical direction, and the claw portion 41 is outward from the edge of the substrate 9 (opposite to the central axis J1). Apart). That is, the holding of the substrate 9 by the chuck portion 4 is released (step S15). Thereafter, the substrate 9 is unloaded from the chamber 12 by an external transport mechanism (step S16), and the processing of the substrate 9 by the substrate processing apparatus 1a is completed. Actually, the processes in steps S10 to S16 are repeated for the other substrates 9.
 ところで、基板処理装置では、基板9の反りや製造誤差等により、搬入される基板9の直径が僅かに変動する。このような変動に対応するため、図8に示す比較例の基板処理装置では、SEMI(Semiconductor Equipment and Materials International)規格における最大の直径の基板9に合わせて、支持部ベース960における複数の第1接触部961の位置および形状、並びに、トッププレート123における複数の第2接触部971の位置および形状が決定される。したがって、比較例の基板処理装置では、上記規格における最大の直径よりも小さい直径の基板9が搬入されると、当該基板9に対する処理液の供給時や、基板9の回転の加減速時等に、基板支持部96上の基板9の位置が変動する(すなわち、基板9が僅かに動く)ことがある。この場合、基板9と接触部961,971とが擦れて汚染物が発生したり、接触部961,971の摩耗が生じる。また、基板9の位置が大きく変動すると、基板9が破損する虞もある。なお、比較例の基板処理装置では、第1接触部961の端面が調芯用の傾斜面であるが、このような傾斜面を設けても、必ずしも基板9が精度よく調芯される訳ではない。 By the way, in the substrate processing apparatus, the diameter of the substrate 9 to be carried in slightly varies due to warpage of the substrate 9 or manufacturing errors. In order to cope with such fluctuations, the substrate processing apparatus of the comparative example shown in FIG. 8 has a plurality of first portions in the support base 960 in accordance with the substrate 9 having the maximum diameter in the SEMI (Semiconductor Equipment and Materials International) standard. The position and shape of the contact portion 961 and the positions and shapes of the plurality of second contact portions 971 on the top plate 123 are determined. Therefore, in the substrate processing apparatus of the comparative example, when the substrate 9 having a diameter smaller than the maximum diameter in the above standard is carried in, when the processing liquid is supplied to the substrate 9 or when acceleration / deceleration of the rotation of the substrate 9 is performed. The position of the substrate 9 on the substrate support 96 may fluctuate (that is, the substrate 9 moves slightly). In this case, the substrate 9 and the contact portions 961 and 971 are rubbed to generate contaminants, and the contact portions 961 and 971 are worn. Further, if the position of the substrate 9 varies greatly, the substrate 9 may be damaged. In the substrate processing apparatus of the comparative example, the end surface of the first contact portion 961 is an inclined surface for alignment. However, even if such an inclined surface is provided, the substrate 9 is not necessarily aligned accurately. Absent.
 これに対し、基板処理装置1aでは、錘支持機構53により支持位置にて支持される錘部51、並びに、複数の爪部41および伝達機構42を有するチャック部4が設けられる。錘支持機構53による錘部51の支持が解除されると、錘部51が自重により支持位置よりも下方の支持解除位置へと下降し、錘部51に接続された伝達機構42の各連結部49が下方に引っ張られる。伝達機構42は、各連結部49に作用する力、すなわち、錘部51の重量による力を対応する爪部41に伝達することにより、複数の爪部41に基板9のエッジを中心軸J1に向けて押させる。これにより、搬入される基板9の直径が変動する場合であっても、支持解除位置に配置される錘部51の重量を利用して、複数の爪部41により基板9を外側から保持することが実現される。その結果、基板9に対する処理液の供給時や、基板9の回転の加減速時等に、基板支持部141上の基板9の位置が変動することを抑制することができ、基板9の破損も防止することができる。また、複数の爪部41により、基板9の中心が中心軸J1上に配置される、すなわち、基板9が回転中心に対して位置合わせされることにより、基板9、基板支持部141およびトッププレート123を含む回転体の重心を中心軸J1近傍に配置する(バランスを取る)ことができ、回転体を安定して回転することができる。 On the other hand, in the substrate processing apparatus 1a, the weight part 51 supported at the support position by the weight support mechanism 53, and the chuck part 4 having the plurality of claw parts 41 and the transmission mechanism 42 are provided. When the support of the weight part 51 by the weight support mechanism 53 is released, the weight part 51 descends to a support release position below the support position by its own weight, and each connecting part of the transmission mechanism 42 connected to the weight part 51 49 is pulled downward. The transmission mechanism 42 transmits the force acting on each connecting portion 49, that is, the force due to the weight of the weight portion 51, to the corresponding claw portion 41, so that the edges of the substrate 9 are centered on the central axis J 1. Push it toward you. Thereby, even if the diameter of the board | substrate 9 carried in fluctuates, the board | substrate 9 is hold | maintained from the outer side by the some nail | claw part 41 using the weight of the weight part 51 arrange | positioned in a support cancellation | release position. Is realized. As a result, the position of the substrate 9 on the substrate support portion 141 can be prevented from fluctuating when the processing liquid is supplied to the substrate 9 or when the rotation of the substrate 9 is accelerated / decelerated. Can be prevented. Further, the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned. The center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
 また、基板9の保持を解除する(基板9を開放する)際には、錘部51をガイド部である接続部材52に沿って持ち上げるのみであり、回転体の他の構成に対して過度な力が及ぶことがない。したがって、回転体の位置をずらすことなく、基板9の保持および開放を行うことができる。さらに、チャック部4において、ばね等の金属の部材を用いないため、基板保持部14の耐薬品性を容易に向上することができ、様々な薬液雰囲気下にて使用可能な基板保持部14を実現することができる。 Further, when releasing the holding of the substrate 9 (releasing the substrate 9), the weight portion 51 is only lifted along the connecting member 52 which is a guide portion, which is excessive with respect to other configurations of the rotating body. There is no power. Therefore, the substrate 9 can be held and released without shifting the position of the rotating body. Further, since no metal member such as a spring is used in the chuck portion 4, the chemical resistance of the substrate holding portion 14 can be easily improved, and the substrate holding portion 14 that can be used in various chemical atmospheres is provided. Can be realized.
 基板処理装置1aでは、基板回転機構15が、中心軸J1を中心とする環状のロータ部152と、ロータ部152と隙間を空けて径方向に対向する環状のステータ部151とを備える。そして、基板支持部141がロータ部152に接続され、基板支持部141およびロータ部152が、チャンバ12内においてチャンバ12に接触することなく回転する。このように、基板支持部141に設けられるチャック部4に対して電気や圧縮空気等の動力源による駆動力を伝達することができない場合であっても、上記構造を有する基板処理装置1aでは、基板9を回転中心に対して位置合わせしつつ保持することが可能となる。 In the substrate processing apparatus 1a, the substrate rotation mechanism 15 includes an annular rotor portion 152 centered on the central axis J1, and an annular stator portion 151 that faces the rotor portion 152 in the radial direction with a gap. The substrate support unit 141 is connected to the rotor unit 152, and the substrate support unit 141 and the rotor unit 152 rotate without contacting the chamber 12 in the chamber 12. Thus, even if it is a case where the driving force by power sources, such as electricity and compressed air, cannot be transmitted with respect to the chuck | zipper part 4 provided in the board | substrate support part 141, in the substrate processing apparatus 1a which has the said structure, The substrate 9 can be held while being aligned with respect to the rotation center.
 また、錘支持機構53による支持が解除された際の錘部51の位置(支持解除位置)が、錘支持機構53により支持された際の錘部51の位置(支持位置)よりも、ロータ部152に近接する。これにより、錘部51がロータ部152と共に回転する際における振動の発生を抑制することができる。なお、錘部51の支持解除位置は、錘部51を基板9および基板支持部141と共に回転するための位置と捉えることができる。 In addition, the position of the weight portion 51 (support release position) when the support by the weight support mechanism 53 is released is greater than the position (support position) of the weight portion 51 when supported by the weight support mechanism 53. Close to 152. Thereby, generation | occurrence | production of the vibration at the time of the weight part 51 rotating with the rotor part 152 can be suppressed. The support release position of the weight portion 51 can be regarded as a position for rotating the weight portion 51 together with the substrate 9 and the substrate support portion 141.
 図19は、チャック部の他の例を示す図である。図19のチャック部4aの伝達機構42aは、各爪部41aに対して設けられる連結部49および複数のシャフト46,47を備える。連結部49および連結部支持部492の構造は図15と同様である。 FIG. 19 is a diagram showing another example of the chuck portion. The transmission mechanism 42a of the chuck portion 4a in FIG. 19 includes a connecting portion 49 and a plurality of shafts 46 and 47 provided for each claw portion 41a. The structure of the connection part 49 and the connection part support part 492 is the same as that of FIG.
 図20は、連結部49および複数のシャフト46,47を示す斜視図である。図20では、図示の便宜上、他の構成要素の図示を省略している。図19に示すように、支持部ベース142の内部空間143には、中心軸J1に垂直な方向(図19の横方向)に伸びるシャフト46が配置される。シャフト46は、一対のシャフト支持部460により、その中心軸J2を中心として回転可能に支持される。図20に示すように、シャフト46の一方の端部には、シャフト46の中心軸J2に垂直な方向に伸びるバー461の一方の端部が固定され、バー461の他方の端部は連結部49の上端部にピン424を介して接続される。バー461には、バー461の長手方向に伸びる長孔462が形成され、ピン424は、長孔462に挿入される。 FIG. 20 is a perspective view showing the connecting portion 49 and the plurality of shafts 46 and 47. In FIG. 20, for convenience of illustration, illustration of other components is omitted. As shown in FIG. 19, a shaft 46 extending in a direction perpendicular to the central axis J <b> 1 (lateral direction in FIG. 19) is disposed in the internal space 143 of the support base 142. The shaft 46 is supported by a pair of shaft support portions 460 so as to be rotatable about its central axis J2. As shown in FIG. 20, one end portion of a bar 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end portion of the shaft 46, and the other end portion of the bar 461 is a connecting portion. 49 is connected to the upper end of 49 via a pin 424. A long hole 462 extending in the longitudinal direction of the bar 461 is formed in the bar 461, and the pin 424 is inserted into the long hole 462.
 図19に示すように、支持部ベース142の内部空間143には、上下方向に伸びるもう1つのシャフト47の下部が配置される。シャフト47は、シャフト支持部470により、その中心軸J3を中心として回転可能に支持される。図20に示すように、シャフト46の他方の端部には、シャフト46の中心軸J2に垂直な方向に伸びるバー463の一方の端部が固定され、バー463の他方の端部はシャフト47の上部にピン425を介して接続される。バー463には、バー463の長手方向に伸びる長孔464が形成され、ピン425は、長孔464に挿入される。 As shown in FIG. 19, the lower portion of another shaft 47 extending in the vertical direction is disposed in the internal space 143 of the support portion base 142. The shaft 47 is supported by the shaft support portion 470 so as to be rotatable about its central axis J3. As shown in FIG. 20, one end of a bar 463 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to the other end of the shaft 46, and the other end of the bar 463 is fixed to the shaft 47. Is connected to the upper portion of the pin via a pin 425. A long hole 464 extending in the longitudinal direction of the bar 463 is formed in the bar 463, and the pin 425 is inserted into the long hole 464.
 図21は、1つの爪部41aを示す平面図であり、上下方向に沿って見た爪部41aを示している。図19および図21に示すように、爪部41aは、上下方向に沿って見た形状が楕円形の爪部本体411を有する。爪部本体411の上面412は、当該楕円形の長軸の一端から他端に向かって高さが漸次減少する傾斜面である。爪部本体411の上面412において、高さが最も大きい位置近傍には、上方に向かって突出する突出部413が設けられる。突出部413は、上部の直径が下部の直径よりも大きい逆円錐台状である。爪部本体411は、有蓋円筒状の爪部支持台410の上面に固定される。 FIG. 21 is a plan view showing one claw portion 41a, showing the claw portion 41a viewed along the vertical direction. As shown in FIG. 19 and FIG. 21, the claw portion 41a has a claw portion body 411 whose shape viewed along the vertical direction is elliptical. An upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the elliptical long axis toward the other end. On the upper surface 412 of the claw body 411, a protrusion 413 that protrudes upward is provided near the position where the height is the largest. The protrusion 413 has an inverted truncated cone shape in which the upper diameter is larger than the lower diameter. The claw portion main body 411 is fixed to the upper surface of the covered claw portion support base 410.
 シャフト47において、下部を除く部位は支持部ベース142の内部空間143の外側に配置され、シャフト47の上端部は爪部支持台410の蓋部の下面に固定される。内部空間143の外側に配置されるシャフト47の部位の周囲は、爪部支持台410の側壁部により囲まれる。爪部支持台410の側壁部と支持部ベース142との接続部は、両者が摺動可能な状態でシールされる。 In the shaft 47, the portion excluding the lower portion is disposed outside the internal space 143 of the support portion base 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410. The periphery of the portion of the shaft 47 disposed outside the internal space 143 is surrounded by the side wall portion of the claw support base 410. The connecting portion between the side wall portion of the claw support base 410 and the support portion base 142 is sealed in a state where both can slide.
 図19中に二点鎖線にて示すように、錘支持機構53により錘部51が支持位置に位置する状態では、基板9のエッジが、爪部本体411の上面412において突出部413から僅かに離れた位置に配置される。図19中に実線にて示すように、支持解除位置に配置された錘部51の重量により連結部49が下方に引っ張られると、図20に示すシャフト46が中心軸J2を中心として回動し、シャフト47が中心軸J3を中心として回動する。これにより、爪部本体411が図21中に二点鎖線にて示す回転位置から実線にて示す回転位置へと中心軸J3を中心として回動し、図19中に実線にて示すように、基板9が上方に僅かに移動しつつ突出部413の側面が基板9のエッジに当接する。言い換えると、突出部413の側面と爪部本体411の上面412とが形成する凹部に、基板9の外縁部が噛み込む。実際には、基板9の外縁に沿って配列される複数の爪部41aに対して複数の連結部49に作用する力がそれぞれ伝達され、複数の爪部41aにより基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。このようにして、図19に示すチャック部4aでは、支持解除位置に配置される錘部51の重量を利用して、基板9を回転中心に対して位置合わせしつつ保持することが実現される。 As shown by a two-dot chain line in FIG. 19, in a state where the weight portion 51 is positioned at the support position by the weight support mechanism 53, the edge of the substrate 9 slightly extends from the protruding portion 413 on the upper surface 412 of the claw portion main body 411. It is arranged at a distant position. As shown by a solid line in FIG. 19, when the connecting portion 49 is pulled downward by the weight of the weight portion 51 disposed at the support release position, the shaft 46 shown in FIG. 20 rotates about the central axis J2. The shaft 47 rotates about the central axis J3. Thereby, the claw body 411 rotates around the central axis J3 from the rotation position indicated by the two-dot chain line in FIG. 21 to the rotation position indicated by the solid line, and as indicated by the solid line in FIG. The side surface of the protruding portion 413 contacts the edge of the substrate 9 while the substrate 9 moves slightly upward. In other words, the outer edge portion of the substrate 9 bites into the recess formed by the side surface of the protruding portion 413 and the upper surface 412 of the claw portion main body 411. Actually, forces acting on the plurality of connecting portions 49 are transmitted to the plurality of claw portions 41a arranged along the outer edge of the substrate 9, respectively, and the plurality of claw portions 41a cause different portions of the edge of the substrate 9 to be located. It is pushed toward the central axis J1 with almost the same force. In this way, in the chuck portion 4a shown in FIG. 19, it is realized that the substrate 9 is held while being aligned with the rotation center by using the weight of the weight portion 51 arranged at the support release position. .
 図14の基板処理装置1aでは、錘支持機構53がチャンバ12に設けられるが、錘支持機構は、チャンバ12の外部に設けられてもよい。図22は、錘支持機構の他の例を示す図である。図22の錘支持機構53aは、支持アーム536を上下方向に平行な中心軸J4を中心として回動可能であるとともに、支持アーム536を上下方向に沿って昇降可能である。 In the substrate processing apparatus 1 a of FIG. 14, the weight support mechanism 53 is provided in the chamber 12, but the weight support mechanism may be provided outside the chamber 12. FIG. 22 is a diagram illustrating another example of the weight support mechanism. The weight support mechanism 53a shown in FIG. 22 can rotate the support arm 536 about a central axis J4 parallel to the vertical direction, and can move the support arm 536 up and down along the vertical direction.
 錘支持機構53aにより錘部51を支持する際には、チャンバ12およびカップ部161がオープン状態とされる。錘支持機構53aは支持アーム536を上昇し、続いて、中心軸J4を中心として回動することにより、環状開口81を介して支持アーム536がチャンバ12内に配置される。その後、錘支持機構53aが支持アーム536を下降し、続いて、回動することにより、支持アーム536の先端に設けられた支持部材537が錘部51の外縁部の下方に配置される。そして、錘支持機構53aが支持アーム536を僅かに上昇することにより、錘部51が支持部材537により下側から支持され、支持位置に配置される。これにより、複数の爪部41による基板9の保持が解除される。複数の爪部41により基板9を保持する際には、支持アーム536を僅かに下降することにより、錘部51の支持が解除され、錘部51が支持解除位置に配置される。錘支持機構53aは、支持アーム536の回動、上昇、回動を順に行うことにより、支持アーム536がチャンバ12から取り出される。なお、錘支持機構53aが、支持アーム536を水平方向に移動、および、上下方向に昇降するものであってもよい。 When the weight part 51 is supported by the weight support mechanism 53a, the chamber 12 and the cup part 161 are opened. The weight support mechanism 53a moves up the support arm 536, and then rotates about the central axis J4, so that the support arm 536 is disposed in the chamber 12 via the annular opening 81. Thereafter, the weight support mechanism 53 a moves down the support arm 536 and then rotates, whereby the support member 537 provided at the tip of the support arm 536 is disposed below the outer edge of the weight part 51. Then, when the weight support mechanism 53a slightly raises the support arm 536, the weight portion 51 is supported from below by the support member 537, and is disposed at the support position. Thereby, holding | maintenance of the board | substrate 9 by the some nail | claw part 41 is cancelled | released. When holding the substrate 9 by the plurality of claw portions 41, the support of the weight portion 51 is released by slightly lowering the support arm 536, and the weight portion 51 is disposed at the support release position. The weight support mechanism 53a sequentially rotates, lifts, and rotates the support arm 536, thereby removing the support arm 536 from the chamber 12. The weight support mechanism 53a may move the support arm 536 in the horizontal direction and move up and down in the vertical direction.
 また、図23に示すように、錘支持機構53が連結部49を介して錘部51を間接的に支持してもよい。図23の例では、連結部49が支持部ベース142の上面よりも上方に突出するとともに、連結部49の上端部に中心軸J1とは反対側に伸びる被支持部498が設けられる。そして、錘支持機構53の支持部材533により、被支持部498が下側から支持されることにより、錘部51が支持位置に配置される。また、錘支持機構53の支持部材533による被支持部498の支持が解除されることにより、錘部51が支持解除位置に配置される。もちろん、図23に示す連結部49の被支持部498が、図22の錘支持機構53aにより支持されてもよい。 Further, as shown in FIG. 23, the weight support mechanism 53 may indirectly support the weight part 51 via the connecting part 49. In the example of FIG. 23, the connecting portion 49 protrudes above the upper surface of the supporting portion base 142, and a supported portion 498 that extends to the opposite side of the central axis J <b> 1 is provided at the upper end portion of the connecting portion 49. Then, the supported portion 498 is supported from below by the support member 533 of the weight support mechanism 53, whereby the weight portion 51 is disposed at the support position. Further, when the support of the supported portion 498 by the support member 533 of the weight support mechanism 53 is released, the weight portion 51 is disposed at the support release position. Of course, the supported portion 498 of the connecting portion 49 shown in FIG. 23 may be supported by the weight support mechanism 53a of FIG.
 図24は、本発明の第3の実施の形態に係る基板処理装置1aの一部を示す図であり、チャック部4bの構成を示す。図24の基板処理装置1aでは、図15の基板処理装置1aと比較して、錘部51および錘支持機構53が省略されるとともに、チャック部4bの構造が図15のチャック部4と相違する。他の構成は図15と同様であり、同じ構成に同じ符号を付す。 FIG. 24 is a view showing a part of the substrate processing apparatus 1a according to the third embodiment of the present invention, and shows the configuration of the chuck portion 4b. In the substrate processing apparatus 1a of FIG. 24, the weight part 51 and the weight support mechanism 53 are omitted and the structure of the chuck part 4b is different from that of the chuck part 4 of FIG. 15 as compared with the substrate processing apparatus 1a of FIG. . Other configurations are the same as those in FIG. 15, and the same components are denoted by the same reference numerals.
 図15のチャック部4と同様に、図24のチャック部4bは基板支持部141に設けられ、チャック部4bの一部は、中心軸J1を中心とする円環状の支持部ベース142の内部に設けられる。図24では、支持部ベース142、および、後述の当接部収容部431内の構成の一部については、中心軸J1を含む面による断面を示している(後述の図25および図26において同様)。チャック部4bは、複数の爪部41と、伝達機構42bとを備える。複数の爪部41は、複数の支持ピン144により支持された基板9の周囲にて周方向に配列される。 Similar to the chuck part 4 of FIG. 15, the chuck part 4b of FIG. 24 is provided on the substrate support part 141, and a part of the chuck part 4b is located inside the annular support part base 142 centering on the central axis J1. Provided. In FIG. 24, a part of the configuration within the support portion base 142 and the abutting portion accommodating portion 431 described later is shown by a cross section including the central axis J1 (the same applies to FIGS. 25 and 26 described later). ). The chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. The plurality of claw portions 41 are arranged in the circumferential direction around the substrate 9 supported by the plurality of support pins 144.
 伝達機構42bでは、図15のチャック部4における連結部49に代えて、当接部43が各爪部41に対して設けられる。当接部43は、上下方向に伸びる棒部材であり、支持部ベース142の上面上に設けられた当接部収容部431内に一部が配置される。当接部収容部431内には、円環状の上側支持部432および下側支持部433が設けられており、上側および下側支持部432,433により当接部43が上下方向に移動可能に支持される。当接部43の下端部は、支持部ベース142に形成された内部空間143に配置される。当接部43は、バー44,45を介して爪部41に接続される。バー44,45の構造は、図15のチャック部4と同様である。 In the transmission mechanism 42b, a contact portion 43 is provided for each claw portion 41 instead of the connecting portion 49 in the chuck portion 4 of FIG. The contact portion 43 is a bar member extending in the vertical direction, and a part thereof is disposed in the contact portion accommodating portion 431 provided on the upper surface of the support portion base 142. An annular upper support portion 432 and a lower support portion 433 are provided in the contact portion accommodating portion 431, and the contact portion 43 is movable in the vertical direction by the upper and lower support portions 432 and 433. Supported. A lower end portion of the contact portion 43 is disposed in an internal space 143 formed in the support portion base 142. The contact portion 43 is connected to the claw portion 41 via the bars 44 and 45. The structure of the bars 44 and 45 is the same as that of the chuck portion 4 of FIG.
 当接部43には、当接部43を中心とする円板部434が取り付けられる。円板部434は、当接部収容部431内において上側支持部432と下側支持部433との間に配置される。円板部434と下側支持部433との間には、当接部43の周囲を囲むばね435が設けられる。ばね435により、円板部434および当接部43が上方に付勢され、図24のように円板部434が上側支持部432の下面と当接する。円板部434が上側支持部432と当接する状態では、バー44のバー45側の端部が、当接部43側の端部よりも下側に位置し、バー45が上下方向に沿っておよそ直立する。これにより、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間した位置に配置される。当接部43の一部(全部であってもよい。)には、ゴム等にて形成される弾性部材436が設けられ、当接部43が長手方向に僅かに伸縮可能である。伝達機構42bが含む上記構成は、複数の爪部41のそれぞれに対して設けられる。 A disc portion 434 centered on the contact portion 43 is attached to the contact portion 43. The disc part 434 is disposed between the upper support part 432 and the lower support part 433 in the contact part accommodating part 431. Between the disc part 434 and the lower side support part 433, the spring 435 surrounding the circumference | surroundings of the contact part 43 is provided. The disk portion 434 and the contact portion 43 are urged upward by the spring 435, and the disk portion 434 contacts the lower surface of the upper support portion 432 as shown in FIG. In a state in which the disc portion 434 is in contact with the upper support portion 432, the end of the bar 44 on the bar 45 side is positioned below the end of the contact portion 43, and the bar 45 is along the vertical direction. Approximately upright. Thereby, the nail | claw part 41 is arrange | positioned in the position spaced apart from the edge of the board | substrate 9 on the outer side (on the opposite side to the central axis J1). An elastic member 436 formed of rubber or the like is provided on a part (or all) of the contact portion 43, and the contact portion 43 can be slightly expanded and contracted in the longitudinal direction. The configuration included in the transmission mechanism 42 b is provided for each of the plurality of claw portions 41.
 図25に示すように、トッププレート123が、基板9および基板支持部141と共に回転するための連結位置に配置される際には、トッププレート123の各係合部241の下部の凹部242に、当接部収容部431から上方に突出する当接部43の上端部が嵌る。これにより、トッププレート123が、基板支持部141の支持部ベース142と連結される。このように、当接部43は、図17の係合ピン140の機能を兼ねる。実際には、各当接部43の上端面、および、当該上端面に対向する係合部241の凹部242内の面には、磁石437,243が設けられ、これらの磁石437,243の間に働く磁力(引力)により、係合部241と当接部43とが強固に結合される。 As shown in FIG. 25, when the top plate 123 is disposed at the connecting position for rotation together with the substrate 9 and the substrate support portion 141, the concave portions 242 below the respective engaging portions 241 of the top plate 123 The upper end part of the contact part 43 which protrudes upward from the contact part accommodating part 431 fits. As a result, the top plate 123 is connected to the support base 142 of the substrate support 141. Thus, the contact part 43 also has the function of the engagement pin 140 of FIG. Actually, magnets 437 and 243 are provided on the upper end surface of each abutting portion 43 and the surface in the concave portion 242 of the engaging portion 241 facing the upper end surface, and between these magnets 437 and 243. The engaging portion 241 and the contact portion 43 are firmly coupled to each other by the magnetic force (attraction) acting on the.
 基板処理装置1aでは、係合部241の下面が当接部収容部431の上面と当接するまで、トッププレート123の自重により当接部43が下方に押し込まれる。バー44のバー45側の端部は、当接部43側の端部よりも上側に移動し、バー45の上端部が基板9に近づくようにバー45が傾斜する。これにより、爪部41が支持ピン144上の基板9のエッジ(側面)に当接し、当該エッジが爪部41により中心軸J1に向けて押される。実際には、複数の当接部43に作用する力が複数の爪部41にそれぞれ伝達され、周方向に配列された複数の爪部41により基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。その結果、基板9の中心を中心軸J1上に配置しつつ、チャック部4bにより基板9が強固に保持される。また、基板支持部141にて支持される基板9の大きさ(直径)が変動する場合であっても、当接部43の弾性部材436の縮み量が変化することにより、係合部241の下面が当接部収容部431の上面と当接する。したがって、トッププレート123の下面と基板9の上面91との間の上下方向の距離が一定に保たれる。 In the substrate processing apparatus 1a, the contact portion 43 is pushed downward by the weight of the top plate 123 until the lower surface of the engagement portion 241 contacts the upper surface of the contact portion accommodating portion 431. The end of the bar 44 on the side of the bar 45 moves above the end on the side of the contact part 43, and the bar 45 is inclined so that the upper end of the bar 45 approaches the substrate 9. As a result, the claw portion 41 comes into contact with the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pushed by the claw portion 41 toward the central axis J1. Actually, the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41, respectively, and the plurality of claw portions 41 arranged in the circumferential direction cause the different portions of the edge of the substrate 9 to have substantially the same force. It is pushed toward the central axis J1. As a result, the substrate 9 is firmly held by the chuck portion 4b while the center of the substrate 9 is disposed on the central axis J1. Even when the size (diameter) of the substrate 9 supported by the substrate support portion 141 varies, the amount of contraction of the elastic member 436 of the contact portion 43 changes, so that the engagement portion 241 The lower surface comes into contact with the upper surface of the contact portion accommodating portion 431. Accordingly, the vertical distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.
 また、錘部であるトッププレート123が基板支持部141から離間した離間位置に配置されると(図14参照)、係合部241が当接部43から上下方向に離間し、ばね435の付勢により当接部43が図24に示す位置へと上昇する。これにより、バー45が上下方向に沿っておよそ直立し、爪部41が基板9のエッジから外側に(中心軸J1とは反対側に)離間する。すなわち、チャック部4bによる基板9の保持が解除される。なお、離間位置に位置するトッププレート123は、錘支持機構であるチャンバ開閉機構131およびチャンバ蓋部122により支持されるため、当該離間位置を錘部の支持位置と捉えることができる。また、連結位置に位置するトッププレート123は、チャンバ開閉機構131およびチャンバ蓋部122による支持が解除されているため(図17および図18参照)、当該連結位置を錘部の支持解除位置と捉えることができる。 Further, when the top plate 123 that is a weight portion is disposed at a separated position away from the substrate support portion 141 (see FIG. 14), the engaging portion 241 is separated from the contact portion 43 in the vertical direction, and the spring 435 is attached. Due to the force, the contact portion 43 rises to the position shown in FIG. Thereby, the bar 45 is substantially upright in the vertical direction, and the claw portion 41 is separated from the edge of the substrate 9 to the outside (on the side opposite to the central axis J1). That is, the holding of the substrate 9 by the chuck portion 4b is released. Since the top plate 123 positioned at the separated position is supported by the chamber opening / closing mechanism 131 and the chamber lid portion 122 which are weight supporting mechanisms, the separated position can be regarded as the supporting position of the weight portion. Further, since the top plate 123 positioned at the connection position is released from the support by the chamber opening / closing mechanism 131 and the chamber lid part 122 (see FIGS. 17 and 18), the connection position is regarded as the support release position of the weight part. be able to.
 以上のように、基板処理装置1aでは、トッププレート123が連結位置に位置する際に、トッププレート123の自重により伝達機構42bの各当接部43が上下方向に押し込まれる。伝達機構42bは、各当接部43に作用する力を対応する爪部41に伝達することにより、複数の爪部41に基板9のエッジを中心軸J1に向けて押させる。これにより、連結位置に配置されるトッププレート123の自重を利用して、複数の爪部41により基板9を外側から保持することが実現される。また、複数の爪部41により、基板9の中心が中心軸J1上に配置される、すなわち、基板9が回転中心に対して位置合わせされることにより、基板9、基板支持部141およびトッププレート123を含む回転体の重心を中心軸J1近傍に配置する(バランスを取る)ことができ、回転体を安定して回転することができる。 As described above, in the substrate processing apparatus 1a, when the top plate 123 is located at the connection position, the contact portions 43 of the transmission mechanism 42b are pushed in the vertical direction by the weight of the top plate 123. The transmission mechanism 42b transmits the force acting on each contact portion 43 to the corresponding claw portion 41, thereby causing the plurality of claw portions 41 to push the edge of the substrate 9 toward the central axis J1. Thereby, it is realized that the substrate 9 is held from the outside by the plurality of claw portions 41 by utilizing the weight of the top plate 123 arranged at the connection position. Further, the center of the substrate 9 is arranged on the central axis J1 by the plurality of claw portions 41, that is, the substrate 9 is aligned with the rotation center, so that the substrate 9, the substrate support portion 141, and the top plate are aligned. The center of gravity of the rotating body including 123 can be arranged (balanced) in the vicinity of the central axis J1, and the rotating body can be rotated stably.
 また、伝達機構42bが弾性部材436を含み、基板支持部141に支持される基板9の大きさが変動する場合に、弾性部材436が弾性変形する。これにより、連結位置におけるトッププレート123と基板9との間の距離を一定に保つことができる。その結果、基板9の大きさが変動する場合であっても、基板9に対して一定の条件にて処理を施すことができる。なお、弾性部材436は、伝達機構42bにおける当接部43以外に設けられてよい。基板9の大きさによって、連結位置におけるトッププレート123と基板9との間の距離が僅かに変動することが許容される場合には、伝達機構において上記弾性部材が省略されてよい。 Further, when the transmission mechanism 42b includes the elastic member 436 and the size of the substrate 9 supported by the substrate support portion 141 varies, the elastic member 436 is elastically deformed. Thereby, the distance between the top plate 123 and the board | substrate 9 in a connection position can be kept constant. As a result, even if the size of the substrate 9 varies, the substrate 9 can be processed under certain conditions. The elastic member 436 may be provided other than the contact portion 43 in the transmission mechanism 42b. When the distance between the top plate 123 and the substrate 9 at the coupling position is allowed to slightly vary depending on the size of the substrate 9, the elastic member may be omitted in the transmission mechanism.
 トッププレート123を錘部として利用する図24の基板処理装置1aでは、図14の基板処理装置1aのように、錘部51および錘支持機構53を別途設ける必要がないため、基板処理装置1aの構造を簡素化することができる。一方、錘部51および錘支持機構53を有する図14の基板処理装置1aでは、トッププレート123を省略しつつ、基板9の上方にスキャンノズルや上面91を洗浄するブラシ等を配置することが可能となる。 In the substrate processing apparatus 1a of FIG. 24 using the top plate 123 as the weight part, it is not necessary to separately provide the weight part 51 and the weight support mechanism 53 unlike the substrate processing apparatus 1a of FIG. The structure can be simplified. On the other hand, in the substrate processing apparatus 1a of FIG. 14 having the weight portion 51 and the weight support mechanism 53, it is possible to dispose a scan nozzle or a brush for cleaning the upper surface 91 above the substrate 9 while omitting the top plate 123. It becomes.
 図26は、チャック部の他の例を示す図である。図26のチャック部4cの伝達機構42cでは、図19のチャック部4aにおける連結部49に代えて、図24および図25と同様の当接部43が設けられる。 FIG. 26 is a diagram showing another example of the chuck portion. In the transmission mechanism 42c of the chuck portion 4c in FIG. 26, a contact portion 43 similar to that in FIGS. 24 and 25 is provided instead of the connecting portion 49 in the chuck portion 4a in FIG.
 トッププレート123が離間位置に位置し、図26中に二点鎖線にて示すように、ばね435の付勢により円板部434が上側支持部432の下面と当接する状態では、基板9のエッジが、爪部本体411の上面412において突出部413から僅かに離れた位置に配置される。図26中に実線にて示すように、連結位置に位置するトッププレート123の自重により当接部43が下方に押し込まれると、シャフト46が中心軸J2を中心として回動し、シャフト47および爪部本体411が中心軸J3を中心として回動する。これにより、図26中に実線にて示すように、基板9が上方に僅かに移動しつつ突出部413の側面が基板9のエッジに当接する。実際には、基板9の外縁に沿って配列される複数の爪部41aに対して複数の当接部43に作用する力がそれぞれ伝達され、複数の爪部41aにより基板9のエッジの異なる部位がほぼ同じ力にて中心軸J1に向けて押される。このようにして、図26に示すチャック部4cでは、連結位置に配置されるトッププレート123の重量を利用して、基板9を回転中心に対して位置合わせしつつ保持することが実現される。 In a state where the top plate 123 is located at the separated position and the disk portion 434 is in contact with the lower surface of the upper support portion 432 by the bias of the spring 435 as indicated by a two-dot chain line in FIG. However, the upper surface 412 of the nail | claw part main body 411 is arrange | positioned in the position left | separated from the protrusion part 413 slightly. As shown by the solid line in FIG. 26, when the contact portion 43 is pushed downward by the weight of the top plate 123 located at the connection position, the shaft 46 rotates about the central axis J2, and the shaft 47 and the claw The main part 411 rotates around the central axis J3. As a result, as shown by a solid line in FIG. 26, the side surface of the protruding portion 413 contacts the edge of the substrate 9 while the substrate 9 moves slightly upward. Actually, forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41a arranged along the outer edge of the substrate 9, respectively, and different portions of the edge of the substrate 9 are transmitted by the plurality of claw portions 41a. Are pushed toward the central axis J1 with substantially the same force. In this way, in the chuck portion 4c shown in FIG. 26, it is realized that the substrate 9 is held while being aligned with the rotation center by using the weight of the top plate 123 arranged at the connection position.
 図27は、チャック部のさらに他の例を示す図である。図27のチャック部4dは、錘部であるトッププレート123に設けられる。図27では、トッププレート123、および、当接部収容部431内の構成の一部については、中心軸J1を含む面による断面を示している。チャック部4dは、複数の爪部41と、伝達機構42dとを備える。複数の爪部41は、中心軸J1に沿って見た場合に基板9の周囲に配置される。伝達機構42dは、図24の伝達機構42bを上下方向に反転したものに近似した構造を有する。 FIG. 27 is a diagram showing still another example of the chuck portion. The chuck portion 4d in FIG. 27 is provided on the top plate 123 which is a weight portion. In FIG. 27, the top plate 123 and a part of the configuration in the contact portion accommodating portion 431 are shown in a cross section by a plane including the central axis J1. The chuck portion 4d includes a plurality of claw portions 41 and a transmission mechanism 42d. The plurality of claw portions 41 are arranged around the substrate 9 when viewed along the central axis J1. The transmission mechanism 42d has a structure similar to that obtained by inverting the transmission mechanism 42b in FIG. 24 in the vertical direction.
 具体的に、伝達機構42dは、各爪部41に対して設けられる当接部43および複数のバー44,45を備える。当接部43は、上側支持部432および下側支持部433により上下方向に移動可能に支持される。トッププレート123の下面には略筒状の当接部収容部431が設けられ、下側支持部433は当接部収容部431内に設けられる。当接部43の上端部は、トッププレート123に形成された内部空間124に配置される。当該内部空間124にはバー44が配置され、バー44の一方の端部が当接部43の上端部にピン421を介して接続される。バー44には、バー44の長手方向に伸びる長孔441が形成され、ピン421は、長孔441に挿入される。バー44は、バー支持部440により、図27の紙面に垂直な回転軸を中心として回転可能に支持される。 Specifically, the transmission mechanism 42d includes a contact portion 43 and a plurality of bars 44 and 45 provided for each claw portion 41. The contact portion 43 is supported by the upper support portion 432 and the lower support portion 433 so as to be movable in the vertical direction. A substantially cylindrical contact portion receiving portion 431 is provided on the lower surface of the top plate 123, and the lower support portion 433 is provided in the contact portion receiving portion 431. An upper end portion of the contact portion 43 is disposed in an internal space 124 formed in the top plate 123. A bar 44 is arranged in the internal space 124, and one end portion of the bar 44 is connected to the upper end portion of the contact portion 43 via a pin 421. A long hole 441 extending in the longitudinal direction of the bar 44 is formed in the bar 44, and the pin 421 is inserted into the long hole 441. The bar 44 is supported by the bar support portion 440 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG.
 バー44の他方の端部は、もう1つのバー45の上端部にピン422を介して接続される。バー45には、バー45の長手方向に伸びる長孔451が形成され、ピン422は、長孔451に挿入される。バー45は、バー支持部450により、図27の紙面に垂直な回転軸を中心として回転可能に支持される。バー45において、バー支持部450よりも下側の部分はトッププレート123の内部空間124の外側に配置される。バー支持部450の下側近傍におけるバー45の部位の周囲はダイアフラムシール427により覆われる。バー45の下端部には爪部41が取り付けられる。 The other end of the bar 44 is connected to the upper end of another bar 45 via a pin 422. A long hole 451 extending in the longitudinal direction of the bar 45 is formed in the bar 45, and the pin 422 is inserted into the long hole 451. The bar 45 is supported by the bar support portion 450 so as to be rotatable about a rotation axis perpendicular to the paper surface of FIG. In the bar 45, a portion below the bar support portion 450 is disposed outside the internal space 124 of the top plate 123. The periphery of the bar 45 in the vicinity of the lower side of the bar support 450 is covered with a diaphragm seal 427. A claw portion 41 is attached to the lower end portion of the bar 45.
 当接部43に取り付けられた円板部434は、上側支持部432と下側支持部433との間に配置される。円板部434と上側支持部432との間には、当接部43の周囲を囲むばね435が設けられる。ばね435により、円板部434および当接部43が下方に付勢される。トッププレート123が離間位置に位置し、図27中に二点鎖線にて示すように円板部434が下側支持部433の上面と当接する状態では、バー45の上下方向に対する傾斜角が小さくなり、爪部41が基板9のエッジから外側に離間する。 The disc part 434 attached to the contact part 43 is arranged between the upper support part 432 and the lower support part 433. A spring 435 surrounding the periphery of the contact portion 43 is provided between the disc portion 434 and the upper support portion 432. The disk portion 434 and the contact portion 43 are urged downward by the spring 435. In a state where the top plate 123 is located at the separated position and the disc portion 434 is in contact with the upper surface of the lower support portion 433 as shown by a two-dot chain line in FIG. 27, the inclination angle of the bar 45 with respect to the vertical direction is small. Thus, the claw portion 41 is separated from the edge of the substrate 9 to the outside.
 支持部ベース142の上面には、上方に突出する係合部241aが設けられており、トッププレート123が連結位置に位置する際には、当接部収容部431から下方に突出する当接部43の下端部が、係合部241aの上部の凹部242aに嵌る。これにより、トッププレート123が基板支持部141と連結される。また、図27中に実線にて示すように、係合部241aの上面が当接部収容部431の下面と当接するまで、基板支持部141により当接部43が上方に押し込まれる。これにより、バー45の下端部が基板9に近づくようにバー45が傾斜し、爪部41が基板9のエッジに当接する。実際には、基板9の外縁に沿って配列される複数の爪部41に対して複数の当接部43に作用する力がそれぞれ伝達され、複数の爪部41により基板9のエッジの異なる部位が中心軸J1に向けて押される。このようにして、図27に示すチャック部4dでは、連結位置に配置されるトッププレート123の重量を利用して、基板9を回転中心に対して位置合わせしつつ保持することが実現される。なお、基板9の上面91から飛散する処理液が、爪部に接続する伝達機構の構成要素にて跳ね返って上面91に付着することを防止するという観点では、チャック部は基板支持部141に設けられることが好ましい。 An engaging portion 241a that protrudes upward is provided on the upper surface of the support portion base 142, and when the top plate 123 is located at the coupling position, the abutting portion that protrudes downward from the abutting portion accommodating portion 431. The lower end portion of 43 fits into the recess 242a at the top of the engaging portion 241a. As a result, the top plate 123 is connected to the substrate support portion 141. Further, as indicated by a solid line in FIG. 27, the contact portion 43 is pushed upward by the substrate support portion 141 until the upper surface of the engagement portion 241 a contacts the lower surface of the contact portion accommodating portion 431. Thereby, the bar 45 is inclined so that the lower end portion of the bar 45 approaches the substrate 9, and the claw portion 41 comes into contact with the edge of the substrate 9. Actually, the forces acting on the plurality of contact portions 43 are transmitted to the plurality of claw portions 41 arranged along the outer edge of the substrate 9, respectively, and the plurality of claw portions 41 are different parts of the edge of the substrate 9. Is pushed toward the central axis J1. In this way, in the chuck portion 4d shown in FIG. 27, it is realized that the substrate 9 is held while being aligned with the rotation center by utilizing the weight of the top plate 123 arranged at the coupling position. In addition, the chuck part is provided in the substrate support part 141 from the viewpoint of preventing the processing liquid splashed from the upper surface 91 of the substrate 9 from splashing and adhering to the upper surface 91 by the components of the transmission mechanism connected to the claw part. It is preferred that
 上記基板処理装置1aでは様々な変形が可能である。 The substrate processing apparatus 1a can be variously modified.
 連結部49または当接部43に作用する力を複数の爪部に伝達する伝達機構として、上記以外の様々な構造が採用されてよい。例えば、図19の伝達機構42aにおいて、シャフト46におけるシャフト47側の端部におねじが形成され、シャフト47に設けられためねじと螺合してもよい(図26において同様)。この場合、連結部49が上下方向に移動することにより、シャフト46が中心軸J2を中心として回転し、シャフト47が基板9の上面91に沿う方向(図19の左右方向)に直線的に移動する。また、伝達機構は、各爪部に対して設けられる連結部49または当接部43に作用する力を当該爪部のみに伝達する構造以外に、1つもしくは複数の連結部49、または、1つもしくは複数の当接部43に作用する力を連動して複数の爪部に伝達する構造であってよい。 Various structures other than the above may be adopted as a transmission mechanism that transmits the force acting on the connecting portion 49 or the contact portion 43 to the plurality of claw portions. For example, in the transmission mechanism 42a of FIG. 19, a screw may be formed at the end of the shaft 46 on the shaft 47 side, and may be screwed to the screw because it is provided on the shaft 47 (the same applies to FIG. 26). In this case, when the connecting portion 49 moves in the vertical direction, the shaft 46 rotates about the central axis J2, and the shaft 47 moves linearly in the direction along the upper surface 91 of the substrate 9 (left and right direction in FIG. 19). To do. Further, the transmission mechanism has one or a plurality of connection portions 49 or 1 other than the structure that transmits the force acting on the connection portion 49 or the contact portion 43 provided to each nail portion only to the nail portion. Alternatively, the force acting on one or a plurality of contact portions 43 may be transmitted to the plurality of claw portions in conjunction with each other.
 図25ないし図27の例では、密閉空間開閉機構であるチャンバ開閉機構131が、錘部であるトッププレート123を支持する錘支持機構(の一部)を兼ねることにより、基板処理装置1aの構造が簡素化されるが、トッププレート123を支持する錘支持機構がチャンバ開閉機構131とは個別に設けられてよい。 In the example of FIGS. 25 to 27, the chamber opening / closing mechanism 131 serving as a sealed space opening / closing mechanism also serves as a weight supporting mechanism (a part) for supporting the top plate 123 serving as a weight portion. However, a weight support mechanism for supporting the top plate 123 may be provided separately from the chamber opening / closing mechanism 131.
 また、チャンバ開閉機構131により、チャンバ蓋部122がチャンバ本体121に対して相対的に昇降すればよく、位置が固定されたチャンバ蓋部122に対してチャンバ本体121が昇降してもよい。この場合も、チャンバ本体121を上昇してチャンバ本体121の上端部をチャンバ蓋部122に近接または当接させることにより、トッププレート123がチャンバ蓋部122と非接触状態となり、支持解除位置(連結位置)に配置される(図17または図18参照)。また、チャンバ本体121を下降してチャンバ蓋部122から離間させることにより、トッププレート123がチャンバ本体121の上方に位置するチャンバ蓋部122の一部から吊り下がって支持位置(離間位置)に配置される(図14参照)。 Further, the chamber opening / closing mechanism 131 may raise and lower the chamber lid 122 relative to the chamber main body 121, and the chamber main body 121 may move up and down relative to the chamber lid 122 whose position is fixed. Also in this case, by raising the chamber main body 121 and bringing the upper end portion of the chamber main body 121 close to or in contact with the chamber lid portion 122, the top plate 123 is brought into a non-contact state with the chamber lid portion 122, and the support release position (connection) (Refer to FIG. 17 or FIG. 18). In addition, the top plate 123 is suspended from a part of the chamber lid part 122 located above the chamber body 121 by being lowered and separated from the chamber lid part 122 and arranged at the support position (separation position). (See FIG. 14).
 さらに、基板処理装置1aの設計によっては、図15のチャック部4および図19のチャック部4aにおける錘部51が、支持部ベース142の上方または側方に設けられてもよい。以上のように、基板処理装置1aでは、上下方向において基板支持部141に対して相対的に異なる位置である第1相対位置と、当該第1相対位置よりも上方の第2相対位置とに配置可能な錘部が任意の位置に設けられる。また、錘支持機構により錘部が支持されることにより錘部が第2相対位置に配置され、錘部の支持が解除されることにより、錘部が、基板9および基板支持部141と共に回転するための第1相対位置に配置される。そして、第1相対位置に位置する錘部の重量による力が、伝達機構により複数の爪部に伝達されることにより、基板9を回転中心に対して位置合わせしつつ保持することが実現される。 Further, depending on the design of the substrate processing apparatus 1a, the chuck portion 4 in FIG. 15 and the weight portion 51 in the chuck portion 4a in FIG. 19 may be provided above or on the side of the support portion base 142. As described above, in the substrate processing apparatus 1a, the substrate processing apparatus 1a is arranged at the first relative position that is relatively different from the substrate support portion 141 in the vertical direction and the second relative position that is above the first relative position. Possible weights are provided at arbitrary positions. Further, the weight part is arranged at the second relative position by supporting the weight part by the weight support mechanism, and the weight part rotates together with the substrate 9 and the substrate support part 141 by releasing the support of the weight part. For the first relative position. And the force by the weight of the weight part located in the 1st relative position is transmitted to a plurality of claw parts by a transmission mechanism, and it is realized holding the board 9 in alignment with the rotation center. .
 基板処理装置1aでは、基板9の上面91の外縁部のみに対向する円環板状の部材が上面対向部として設けられてよい。この場合も、回転する基板9に処理液を供給する処理において、基板9の外縁部から飛散する処理液がチャンバ12の内壁にて跳ね返って基板9の上面91に再付着することが、連結位置に配置された上記円環板状の部材により防止される。このように、処理液の再付着を防止するという観点では、基板処理装置1aでは、基板9の上面91の少なくとも外縁部に対向する上面対向部が設けられることが好ましい。 In the substrate processing apparatus 1a, an annular plate-like member facing only the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface facing portion. Also in this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid splashing from the outer edge of the substrate 9 rebounds on the inner wall of the chamber 12 and reattaches to the upper surface 91 of the substrate 9. This is prevented by the annular plate-like member disposed in the frame. Thus, from the viewpoint of preventing re-adhesion of the processing liquid, it is preferable that the substrate processing apparatus 1 a is provided with an upper surface facing portion that faces at least the outer edge portion of the upper surface 91 of the substrate 9.
 基板回転機構15のステータ部151およびロータ部152の形状および構造は、様々に変更されてよい。例えば、ロータ部152の内側(中心軸J1側)にステータ部151が設けられてもよい。ロータ部152は、必ずしも浮遊状態にて回転する必要はなく、チャンバ12内にロータ部152を機械的に支持するガイド等の構造が設けられ、当該ガイドに沿ってロータ部152が回転してもよい。中空モータを有する基板処理装置1aでは、基板支持部141および錘部51が中心軸J1を中心とする環状であることにより、基板9の下面92に対向する位置に下部ノズル182および複数の加熱ガス供給ノズル180を容易に配置することが可能となる。また、基板回転機構15は、必ずしも中空モータである必要はなく、例えば、円板状の基板支持部141の下面に固定された軸を回転する基板回転機構が利用されてもよい。 The shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed. For example, the stator part 151 may be provided inside the rotor part 152 (center axis J1 side). The rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good. In the substrate processing apparatus 1a having a hollow motor, the substrate support portion 141 and the weight portion 51 are annular with the central axis J1 as the center, so that the lower nozzle 182 and the plurality of heating gases are positioned at positions facing the lower surface 92 of the substrate 9. The supply nozzle 180 can be easily arranged. Further, the substrate rotation mechanism 15 is not necessarily a hollow motor. For example, a substrate rotation mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate support 141 may be used.
 上記基板処理装置1aでは、基板支持部141、基板回転機構15のロータ部152、錘部51(または、錘部であるトッププレート123)およびチャック部4,4a~4dが、密閉空間形成部であるチャンバ12内に設けられ、密閉された内部空間にて基板9に対する処理が行われるが、基板処理装置の設計によっては、開放された空間にて基板9に対する処理が行われてよい。 In the substrate processing apparatus 1a, the substrate support portion 141, the rotor portion 152 of the substrate rotation mechanism 15, the weight portion 51 (or the top plate 123 that is the weight portion), and the chuck portions 4, 4a to 4d are the sealed space forming portion. Although the processing for the substrate 9 is performed in a sealed internal space provided in a certain chamber 12, the processing for the substrate 9 may be performed in an open space depending on the design of the substrate processing apparatus.
 基板処理装置1aにて処理される基板は半導体基板には限定されず、ガラス基板や他の基板であってもよい。 The substrate processed by the substrate processing apparatus 1a is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.
 上記実施の形態および各変形例における構成は、相互に矛盾しない限り適宜組み合わされてよい。 The configurations in the above embodiment and each modification may be combined as appropriate as long as they do not contradict each other.
 発明を詳細に描写して説明したが、既述の説明は例示的であって限定的なものではない。したがって、本発明の範囲を逸脱しない限り、多数の変形や態様が可能であるといえる。 Although the invention has been described in detail, the above description is illustrative and not restrictive. Therefore, it can be said that many modifications and embodiments are possible without departing from the scope of the present invention.
 1,1a  基板処理装置
 4,4a~4d  チャック部
 9  基板
 12  チャンバ
 15  基板回転機構
 41,41a  爪部
 42,42a~42d  伝達機構
 43  当接部
 51  錘部
 52  接続部材
 53,53a  錘支持機構
 91  上面
 120  チャンバ空間
 121  チャンバ本体
 122  チャンバ蓋部
 123  トッププレート
 126  トッププレート移動機構
 131  チャンバ開閉機構
 141  基板支持部
 151  ステータ部
 152  ロータ部
 181  上部ノズル
 436  弾性部材
 J1  中心軸
DESCRIPTION OF SYMBOLS 1, 1a Substrate processing apparatus 4, 4a-4d Chuck part 9 Substrate 12 Chamber 15 Substrate rotation mechanism 41, 41a Claw part 42, 42a-42d Transmission mechanism 43 Contact part 51 Weight part 52 Connection member 53, 53a Weight support mechanism 91 Upper surface 120 Chamber space 121 Chamber body 122 Chamber lid portion 123 Top plate 126 Top plate moving mechanism 131 Chamber opening / closing mechanism 141 Substrate support portion 151 Stator portion 152 Rotor portion 181 Upper nozzle 436 Elastic member J1 Central axis

Claims (13)

  1.  基板を処理する基板処理装置であって、
     基板の一方の主面である上面を上側に向けた状態で前記基板を下側から支持する基板支持部と、
     前記基板支持部を前記基板に垂直な中心軸を中心として回転する回転機構と、
     前記上面の少なくとも外縁部に対向する上面対向部と、
     前記上面対向部を前記基板支持部に対して上方に離間する離間位置と、前記基板支持部と連結する連結位置とに選択的に配置する対向部支持機構と、
     前記基板支持部または前記上面対向部の一方に設けられるチャック部と、
    を備え、
     前記チャック部が、
     前記中心軸に沿って見た場合に、前記基板の周囲に配置される少なくとも3個の爪部と、
     前記上面対向部が前記連結位置に位置する際に前記基板支持部または前記上面対向部の他方により押し込まれる当接部を含み、前記当接部に作用する力を、前記少なくとも3個の爪部に伝達することにより、前記少なくとも3個の爪部に前記基板のエッジを前記中心軸に向けて押させる伝達機構と、
    を備える。
    A substrate processing apparatus for processing a substrate,
    A substrate support portion for supporting the substrate from the lower side in a state where the upper surface, which is one main surface of the substrate, is directed upward,
    A rotation mechanism for rotating the substrate support portion about a central axis perpendicular to the substrate;
    An upper surface facing portion facing at least an outer edge portion of the upper surface;
    A facing portion support mechanism that selectively disposes the upper surface facing portion at a separating position that is spaced upward with respect to the substrate supporting portion and a connecting position that is coupled to the substrate supporting portion;
    A chuck portion provided on one of the substrate support portion or the upper surface facing portion;
    With
    The chuck portion is
    At least three claws disposed around the substrate when viewed along the central axis;
    A contact portion that is pushed in by the other of the substrate support portion and the upper surface facing portion when the upper surface facing portion is located at the coupling position, and the force acting on the contact portion is configured to receive the at least three claw portions A transmission mechanism that causes the at least three claw portions to push the edge of the substrate toward the central axis,
    Is provided.
  2.  請求項1に記載の基板処理装置であって、
     前記伝達機構が弾性部材を含み、
     前記基板支持部に支持される基板の大きさが変動する場合に、前記弾性部材が弾性変形することにより、前記連結位置における前記上面対向部と前記基板との間の距離が一定に保たれる。
    The substrate processing apparatus according to claim 1,
    The transmission mechanism includes an elastic member;
    When the size of the substrate supported by the substrate support portion varies, the elastic member is elastically deformed, so that the distance between the upper surface facing portion and the substrate at the connection position is kept constant. .
  3.  請求項1に記載の基板処理装置であって、
     前記回転機構が、
     前記中心軸を中心とする環状であり、永久磁石を含むロータ部と、
     前記ロータ部と前記中心軸を中心とする径方向に対向する環状であり、前記ロータ部との間にて前記中心軸を中心とする回転力を発生するステータ部と、
    を備え、
     前記ロータ部が前記基板支持部と接続される。
    The substrate processing apparatus according to claim 1,
    The rotation mechanism is
    A rotor centered around the central axis, and including a permanent magnet;
    A stator portion that is annularly opposed to the rotor portion in the radial direction centered on the central axis, and that generates a rotational force about the central axis between the rotor portion;
    With
    The rotor part is connected to the substrate support part.
  4.  請求項3に記載の基板処理装置であって、
     前記基板に対する処理が行われる、密閉された内部空間を形成する密閉空間形成部をさらに備え、
     前記基板支持部、前記回転機構の前記ロータ部、前記上面対向部および前記チャック部が、前記密閉空間形成部内に配置される。
    The substrate processing apparatus according to claim 3, wherein
    Further comprising a sealed space forming part that forms a sealed internal space in which processing for the substrate is performed,
    The substrate support portion, the rotor portion of the rotation mechanism, the upper surface facing portion, and the chuck portion are disposed in the sealed space forming portion.
  5.  請求項4に記載の基板処理装置であって、
     前記密閉空間形成部が、
     上部開口を有するチャンバ本体と、
     前記チャンバ本体の前記上部開口を閉塞するチャンバ蓋部と、
    を備え、
     前記チャンバ蓋部が前記対向部支持機構の一部でもあり、前記チャンバ蓋部が前記チャンバ本体に対して相対的に昇降し、
     前記上面対向部が前記離間位置に位置する際に、前記上面対向部が、前記チャンバ本体の上方に位置する前記チャンバ蓋部の一部から吊り下がり、
     前記上面対向部が前記連結位置に位置する際に、前記上面対向部が、前記チャンバ本体に当接または近接する前記チャンバ蓋部と非接触状態である。
    The substrate processing apparatus according to claim 4,
    The sealed space forming part is
    A chamber body having an upper opening;
    A chamber lid for closing the upper opening of the chamber body;
    With
    The chamber lid is also a part of the opposed portion support mechanism, the chamber lid is raised and lowered relative to the chamber body;
    When the upper surface facing portion is located at the separated position, the upper surface facing portion is suspended from a part of the chamber lid portion located above the chamber body,
    When the upper surface facing portion is located at the coupling position, the upper surface facing portion is in a non-contact state with the chamber lid portion in contact with or close to the chamber body.
  6.  請求項1ないし5のいずれかに記載の基板処理装置であって、
     前記連結位置に位置する際に前記基板を覆うように前記上面に沿って広がる前記上面対向部と、前記基板の前記上面との間に、所定の薬液を供給するノズルをさらに備える。
    A substrate processing apparatus according to any one of claims 1 to 5,
    A nozzle for supplying a predetermined chemical solution is further provided between the upper surface facing portion that extends along the upper surface so as to cover the substrate when positioned at the connection position, and the upper surface of the substrate.
  7.  基板を処理する基板処理装置であって、
     一方の主面を上側に向けた状態で基板を下側から支持する基板支持部と、
     前記基板支持部を前記基板に垂直な中心軸を中心として回転する回転機構と、
     上下方向において前記基板支持部に対して相対的に異なる位置である第1相対位置と、前記第1相対位置よりも上方の第2相対位置とに配置可能な錘部と、
     前記錘部を支持することにより前記錘部を前記第2相対位置に配置し、前記錘部の支持を解除することにより、前記錘部を、前記基板および前記基板支持部と共に回転するための前記第1相対位置に位置させる錘支持機構と、
     前記基板支持部または前記錘部に設けられるチャック部と、
    を備え、
     前記チャック部が、
     前記中心軸に沿って見た場合に、前記基板の周囲に配置される少なくとも3個の爪部と、
     前記第1相対位置に位置する前記錘部の重量による力を、前記少なくとも3個の爪部に伝達することにより、前記少なくとも3個の爪部に前記基板のエッジを前記中心軸に向けて押させる伝達機構と、
    を備える。
    A substrate processing apparatus for processing a substrate,
    A substrate support part for supporting the substrate from below with one main surface facing upward,
    A rotation mechanism for rotating the substrate support portion about a central axis perpendicular to the substrate;
    A weight portion that can be disposed at a first relative position that is relatively different from the substrate support portion in the vertical direction and a second relative position that is above the first relative position;
    The weight part is disposed at the second relative position by supporting the weight part, and the weight part is rotated together with the substrate and the substrate support part by releasing the support of the weight part. A weight support mechanism positioned at the first relative position;
    A chuck portion provided on the substrate support portion or the weight portion;
    With
    The chuck portion is
    At least three claws disposed around the substrate when viewed along the central axis;
    By transmitting the force due to the weight of the weight portion located at the first relative position to the at least three claw portions, the edge of the substrate is pushed toward the central axis on the at least three claw portions. A transmission mechanism
    Is provided.
  8.  請求項7に記載の基板処理装置であって、
     前記回転機構が、
     前記中心軸を中心とする環状であり、永久磁石を含むロータ部と、
     前記ロータ部と前記中心軸を中心とする径方向に対向する環状であり、前記ロータ部との間にて前記中心軸を中心とする回転力を発生するステータ部と、
    を備え、
     前記ロータ部が前記基板支持部と接続される。
    The substrate processing apparatus according to claim 7,
    The rotation mechanism is
    A rotor centered around the central axis, and including a permanent magnet;
    A stator portion that is annularly opposed to the rotor portion in the radial direction centered on the central axis, and that generates a rotational force about the central axis between the rotor portion;
    With
    The rotor part is connected to the substrate support part.
  9.  請求項8に記載の基板処理装置であって、
     前記錘部が前記基板支持部と、前記基板支持部の下方に配置された前記ロータ部との間に配置され、前記基板支持部と前記ロータ部とを接続するガイド部に沿って前記上下方向に移動可能であり、
     前記チャック部が、前記基板支持部に設けられる。
    The substrate processing apparatus according to claim 8, comprising:
    The weight portion is disposed between the substrate support portion and the rotor portion disposed below the substrate support portion, and the vertical direction along a guide portion connecting the substrate support portion and the rotor portion. Can be moved to
    The chuck portion is provided on the substrate support portion.
  10.  請求項9に記載の基板処理装置であって、
     前記基板支持部および前記錘部が前記中心軸を中心とする環状である。
    The substrate processing apparatus according to claim 9, comprising:
    The substrate support portion and the weight portion are annular with the central axis as a center.
  11.  請求項9に記載の基板処理装置であって、
     前記錘支持機構による支持が解除された際の前記錘部の位置が、前記錘支持機構により支持された際の前記錘部の位置よりも、前記ロータ部に近接する。
    The substrate processing apparatus according to claim 9, comprising:
    The position of the weight part when the support by the weight support mechanism is released is closer to the rotor part than the position of the weight part when supported by the weight support mechanism.
  12.  請求項8ないし11のいずれかに記載の基板処理装置であって、
     前記基板に対する処理が行われる、密閉された内部空間を形成する密閉空間形成部をさらに備え、
     前記基板支持部、前記回転機構の前記ロータ部、前記錘部および前記チャック部が、前記密閉空間形成部内に配置される。
    A substrate processing apparatus according to any one of claims 8 to 11,
    Further comprising a sealed space forming part that forms a sealed internal space in which processing for the substrate is performed,
    The substrate support portion, the rotor portion of the rotation mechanism, the weight portion, and the chuck portion are disposed in the sealed space forming portion.
  13.  請求項12に記載の基板処理装置であって、
     前記錘支持機構が、前記密閉空間形成部に設けられる。
    The substrate processing apparatus according to claim 12,
    The weight support mechanism is provided in the sealed space forming part.
PCT/JP2015/051310 2014-01-28 2015-01-20 Substrate processing device WO2015115239A1 (en)

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