WO2015089923A1 - 阵列基板、液晶面板及阵列基板的制作方法 - Google Patents

阵列基板、液晶面板及阵列基板的制作方法 Download PDF

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Publication number
WO2015089923A1
WO2015089923A1 PCT/CN2014/070356 CN2014070356W WO2015089923A1 WO 2015089923 A1 WO2015089923 A1 WO 2015089923A1 CN 2014070356 W CN2014070356 W CN 2014070356W WO 2015089923 A1 WO2015089923 A1 WO 2015089923A1
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Prior art keywords
discharge element
array substrate
display area
discharge
data line
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PCT/CN2014/070356
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English (en)
French (fr)
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衣志光
刘志诚
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深圳市华星光电技术有限公司
衣志光
刘志诚
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Priority to US14/235,455 priority Critical patent/US9608013B2/en
Publication of WO2015089923A1 publication Critical patent/WO2015089923A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a method for fabricating an array substrate, a liquid crystal panel, and an array substrate.
  • Display is indispensable in people's daily life, and the types of displays include CRT (Cathode Ray Tube, cathode ray tube, LED (Light Emitting Diode), TFT-LCD (Thin Film Transistor-Liquid) Crystal Display, thin film transistor liquid crystal display), PDP (Plasma Display Panel, plasma, etc., most of the current displays on the market are TFT-LCD types.
  • the TFT-LCD display includes an array substrate, a color filter substrate, and a liquid crystal layer sandwiched between the array substrate and the color filter substrate, and controls display of the display by controlling a voltage applied to the liquid crystal layer.
  • the TFT-LCD display is prone to generate static electricity during the manufacturing process (for example, the fabrication process of the array substrate), and thus it is easy to cause some components (for example, conductive lines or switching elements) to burn out during the manufacturing process of the display, resulting in a decrease in yield.
  • FIG. 1 shows the common ESD (Electro-Static) in the array substrate.
  • Discharge, electrostatic discharge) protection device 20 ESD protection device 20 is formed by: making GE (Gate) electrode 101, then making semiconductor layer 102 and SE layer 103, then making an insulating layer and opening 104, and finally Transparent electrode 105 (Indium Tin Oxide, ITO) shorts the GE electrode 101 and the SE layer 103 to form an array substrate while forming two sets of back-to-back TFTs 10 (Thin film transistor), that is, the electrostatic protection device 20, referring to FIG. 2, in the array substrate, the electrostatic protection device 20 directs the current generated by the array substrate to the Com (common) electrode 30, thereby achieving the array substrate after all the processes are completed. The effect of static electricity protection.
  • ITO Indium Tin Oxide
  • the protection circuit 20 in the above FIG. 1 and FIG. 2 needs to function after all the processes of the array substrate are completed, and the electrostatic protection of the components of the display cannot be performed in the process of the array substrate. Therefore, the static electricity cannot be solved. A problem that causes some components in the display to burn out, resulting in a lower yield.
  • the main object of the present invention is to provide a method for fabricating an array substrate, a liquid crystal panel, and an array substrate, which is capable of electrostatically protecting the fabricated components in a subsequent process of the array substrate after the scan lines and data lines are formed on the array substrate.
  • the function effectively avoids the problem that the static electricity causes some components of the array substrate to burn out, which leads to a decrease in the yield rate, improves the yield rate, and further reduces the production cost.
  • the present invention provides an array substrate including a display area, a plurality of scan lines and signal lines arranged in a matrix state in the display area, and a common electrode line disposed at an edge of the display area and surrounding the display area, a first discharge element and a second discharge element disposed corresponding to the first discharge element, the first discharge element being electrically connected to the common electrode line, and the second discharge element being electrically connected to the data line.
  • a cross-sectional area of the first discharge element near one end of the second discharge element is smaller than a cross-sectional area of the other end, and a cross-sectional area of the second discharge element near an end of the first discharge element Less than the cross-sectional area of the other end.
  • one end of the first discharge element near the second discharge element is a tip end, and one end of the second discharge element near the first discharge element is a tip end.
  • the discharge gap is 10 um.
  • the method further includes a non-display area surrounding the display area, and the first discharge element and the second discharge element are both disposed on the non-display area.
  • the data line is provided with a data line lead-out line in the non-display area, and the second discharge element is electrically connected to the data line lead-out line.
  • the present invention also provides a liquid crystal panel comprising the array substrate, the color filter substrate and the liquid crystal layer sandwiched between the array substrate and the color filter substrate.
  • the invention also provides a method for fabricating an array substrate, the method comprising the steps of:
  • the substrate comprising a display area, a plurality of scan lines and signal lines arranged in a matrix state in the display area, and a common electrode line disposed at an edge of the display area and surrounding the display area;
  • a cross-sectional area of the first discharge element near one end of the second discharge element is smaller than a cross-sectional area of the other end, and a cross-sectional area of the second discharge element near an end of the first discharge element Less than the cross-sectional area of the other end.
  • the first discharge element is formed in synchronization with the scan line
  • the second discharge element is formed in synchronization with the data line.
  • an end of the first discharge element adjacent to the second discharge element is disposed as a tip end, and an end of the second discharge element adjacent to the first discharge element is disposed as a tip end.
  • the present invention provides a first discharge element and a second discharge element on an array substrate, and the first discharge element is electrically connected to a common electrode line, and the second discharge element is electrically connected to the data line, Forming or forming the scan line and the data line while forming the scan line and the data line to form the first discharge element and the second discharge element, after the scan line and the data line are fabricated on the array substrate,
  • the components produced are electrostatically protected, effectively avoiding the problem that static electricity causes some components of the array substrate to burn out, resulting in a decrease in yield, improving the yield, and further reducing the production cost.
  • FIG. 1 is a schematic structural view of an electrostatic protection device in a prior art array substrate
  • FIG. 2 is a schematic structural view of an electrostatic protection circuit in a prior art array substrate
  • FIG. 3 is a schematic structural view of a preferred embodiment of an array substrate of the present invention.
  • FIG. 4 is a schematic flow chart of a preferred embodiment of a method for fabricating an array substrate of the present invention.
  • the array substrate 1 provided by the present invention includes a display area 11 in which a plurality of scan lines 12 and signal lines in a matrix state are disposed, and is disposed at an edge of the display area 11 and
  • the common electrode line 14 surrounding the display area 11 further includes a first discharge element 16 and a second discharge element 15 disposed corresponding to the first discharge element 16, the first discharge element 16 and the common electrode line 14 is electrically connected, and the second discharge element 15 is electrically connected to the data line 13.
  • the array substrate 1 includes a plurality of scan lines 12 and signal lines arranged in a matrix state, and correspondingly disposed a plurality of first discharge elements 16 and a second discharge corresponding to the first discharge element 16
  • the elements 15, each of the first discharge elements 16 are electrically connected to the common electrode line 14, and each of the second discharge elements 15 is electrically connected to a corresponding data line 13.
  • the first discharge element 16 is formed in synchronization with the scan line 12, and the second discharge element 15 is formed in synchronization with the data line 13.
  • the scan line 12 and the data line 13 are formed after the scan line 12 and the data line 13 are formed on the array substrate 1.
  • the components in the array substrate 1 are protected, and the cross-sectional area of the first discharge element 16 near the one end 17 of the second discharge element 15 is smaller than that of the other end 20 .
  • the cross-sectional area, and the cross-sectional area of the second discharge element 15 near the one end 18 of the first discharge element 16 is smaller than the cross-sectional area of the other end 21.
  • the first discharge element 16 and the second discharge element 15 are disposed on the array substrate 1, and the first discharge element 16 is electrically connected to the common electrode line 14, and the second discharge element 15 and the data line 13 are electrically connected.
  • the fabricated components are electrostatically protected in the subsequent process of the array substrate 1, and the static electricity is prevented from causing some components of the array substrate 1 to burn out, resulting in a decrease in yield.
  • the problem is to increase the yield and thus the production cost.
  • the first discharge element 16 is close to the second discharge element 15.
  • One end 17 is a tip end
  • the second discharge element 15 is near the end 18 of the first discharge element 16 as a tip end.
  • a discharge gap is formed between the first discharge element 16 and the second discharge element 15, and the discharge gap is 10 Um.
  • the discharge gap may also be any other suitable gap that can better discharge the static electricity generated in the process of the array substrate 1 by 20 um or the like.
  • the array substrate 1 further includes a non-display area 11 surrounding the display area 11, the first discharge element 16 and the second Discharge elements 15 are all disposed on the non-display area 11.
  • the data line 13 is provided with a data line 13 lead line 19 in the non-display area 11, and the second discharge element 15 is electrically connected to the data line 13 lead line 19.
  • the present invention also provides a liquid crystal panel comprising the array substrate, the color filter substrate, and the liquid crystal layer sandwiched between the array substrate and the color filter substrate.
  • the specific structure of the array substrate is as described in the above embodiments, and will not be described in detail herein.
  • the present invention also provides a method for fabricating an array substrate, the method comprising the steps of:
  • Step S11 providing a substrate, the substrate comprising a display area, a plurality of scan lines and signal lines arranged in a matrix state in the display area, and a common one disposed at an edge of the display area and surrounding the display area Electrode line
  • Step S12 a first discharge element and a second discharge element corresponding to the first discharge element are disposed on the substrate, the first discharge element is electrically connected to the common electrode line, and the second discharge element Electrically connected to the data line.
  • the array substrate includes a plurality of scan lines and signal lines arranged in a matrix state, and correspondingly, a plurality of first discharge elements and a second discharge element disposed corresponding to the first discharge element, each of the first discharge elements Electrically connected to the common electrode line, each of the second discharge elements is electrically connected to a corresponding data line.
  • the first discharge element is formed in synchronization with the scan line
  • the second discharge element is formed in synchronization with the data line.
  • the scan lines and the data lines are formed after the scan lines and the data lines are formed on the array substrate.
  • the first discharge element is formed in synchronization with the scan line
  • the second discharge element is formed in synchronization with the data line.
  • the process of forming a scan line on the array substrate is: coating on the array substrate
  • the conductive material and the photoresist are irradiated with ultraviolet rays by applying a specific mask to a specific region of the substrate after the conductive material and the photoresist are sequentially applied, that is, the substrate after the conductive material and the photoresist are sequentially superposed and coated, and the exposed portion is exposed.
  • the substrate is developed, and a plurality of scanning lines and signal lines in a matrix state, a first discharge element electrically connected to the common electrode line, and a second discharge element electrically connected to the data line are formed on the array substrate.
  • the specific reticle is opened at a specific position of the reticle according to the characteristics of the photoresist. If the photoresist is a negative photoresist, the photoresist irradiated by the ultraviolet light in a specific opening region will not be washed away by the development. If the photoresist is a positive photoresist, the photoresist that is irradiated with ultraviolet light in a specific opening region will be washed away.
  • the process of fabricating the scan line and the first discharge element is: if the photoresist is a negative photoresist, the specific mask is provided with an opening at a position of the scan line and the first discharge element;
  • the resistor is a positive photoresist, the specific mask is provided with an opening at a position other than the scan line and the first discharge element, and the scan line and the first discharge element are fabricated in the above manner; the data line and the second discharge element are fabricated
  • the process is: if the photoresist is a negative photoresist, the specific reticle is provided with an opening at a position of the data line and the second discharge element; if the photoresist is a positive photoresist, the specific reticle is An opening is provided at a position other than the data line and the second discharge element, and the data line and the second discharge element are fabricated in the above manner.
  • the first discharge element and the second discharge element are disposed on the array substrate, and the first discharge element is electrically connected to the common electrode line, and the second discharge element is electrically connected to the data line to form the scan.
  • the first discharge element and the second discharge element are formed, and after the scan line and the data line are formed on the array substrate, the subsequent process of the array substrate is performed.
  • the components produced by the device play the role of static electricity protection, effectively avoiding the problem that static electricity causes some components of the array substrate to burn out, resulting in a decrease in yield, improving the yield rate, and further reducing the production cost.
  • the end of the first discharge element near the second discharge element is a tip end.
  • One end of the second discharge element adjacent to the first discharge element is a tip end.
  • a discharge gap is formed between the first discharge element and the second discharge element, and the discharge gap is 10 Um.
  • the discharge gap may also be any other suitable gap that can better discharge static electricity generated in the array substrate process, such as 20 um.
  • the array substrate further includes a non-display area surrounding the display area, and the first discharge element and the second discharge element are both disposed at On the non-display area.
  • the data line is provided with a data line lead-out line in the non-display area, and the second discharge element is electrically connected to the data line lead-out line.

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Abstract

提供了一种阵列基板（1）。在阵列基板（1）上设置第一放电元件（16）和第二放电元件（15），且第一放电元件（16）与公用电极线（14）电连接，第二放电元件（15）与数据线（13）电连接，在形成扫描线（12）和数据线（13）的同时形成或者形成扫描线（12）和数据线（13）之后形成第一放电元件（16）和第二放电元件（15），实现在阵列基板（1）制作完扫描线（12）和数据线（13）后，在阵列基板（1）后续制程中对制作的元器件起到静电防护的作用，有效避免静电导致阵列基板（1）的某些元器件烧坏而导致良品率降低的问题，提高良品率，进而降低生产成本。还提供了一种液晶面板及阵列基板（1）的制作方法。

Description

阵列基板、液晶面板及阵列基板的制作方法
技术领域
　　　本发明涉及到液晶显示领域，特别涉及到阵列基板、液晶面板及阵列基板的制作方法。　　　
背景技术
　　　显示器在人们日常生活中已经无法或缺，显示器的类型包括CRT（Cathode Ray Tube，阴极射线管）、LED（Light Emitting Diode，发光二极管）、TFT-LCD（Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器）、PDP（Plasma Display Panel，等离子）等，目前市面上显示器绝大多数为TFT-LCD类型。
　　　TFT-LCD显示器包括阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层，通过控制加载在液晶层的电压来控制显示器的显示。TFT-LCD显示器在制作过程（例如，阵列基板的制作过程）中容易产生静电，进而容易导致显示器制作过程中的某些元器件（例如，导电线路或开关元件）烧坏而导致良品率降低。
　　　参考图1，图1为阵列基板中常见的ESD（Electro-Static discharge，静电释放）保护装置20，ESD保护装置20的形成过程为：制作GE（Gate，扫描）电极101，然后制作半导体层102和SE层103，然后进行绝缘层制作并开孔104，最后通过透明电极105（Indium Tin Oxide ，ITO）将GE电极101和SE层103短路，以形成阵列基板的同时形成了两组背靠背TFT10 （薄膜晶体管），即静电防护装置20，参考图2，在阵列基板中，静电防护装置20将阵列基板产生的电流导向Com（Common，公用）电极30，进而达到对完成所有制程后的阵列基板静电防护的效果。
　　　然而，上述图1和图2中的防护电路20需要阵列基板的所有制程完成后才发挥作用，无法在阵列基板制程中对显示器的元器件起到静电防护的作用，因此，无法解决因为静电而导致显示器中的某些元器件烧坏而导致良品率降低的问题。　　　
发明内容
　　　本发明的主要目的为提供一种阵列基板、液晶面板及阵列基板的制作方法，实现在阵列基板制作完扫描线和数据线后，在阵列基板后续制程中对制作的元器件起到静电防护的作用，有效避免静电导致阵列基板的某些元器件烧坏而导致良品率降低的问题，提高良品率，进而降低生产成本。　　　
　　　本发明提出一种阵列基板，包括显示区域，在所述显示区域内设置成矩阵状态的多个扫描线和信号线，及设置在所述显示区域边缘且环绕所述显示区域的公用电极线，第一放电元件及与所述第一放电元件对应设置的第二放电元件，所述第一放电元件与所述公用电极线电连接，所述第二放电元件与所述数据线电连接。
　　　优选地，所述第一放电元件靠近所述第二放电元件的一端的横截面积小于另一端的横截面积，且所述第二放电元件靠近所述第一放电元件的一端的横截面积小于另一端的横截面积。
　　　优选地，所述第一放电元件靠近所述第二放电元件的一端为尖端，所述第二放电元件靠近所述第一放电元件的一端为尖端。
　　　优选地，所述第一放电元件与所述第二放电元件之间具有放电间隙。
　　　优选地，所述放电间隙为10 um。
　　　优选地，还包括环绕所述显示区域的非显示区域，所述第一放电元件与所述第二放电元件均设置在所述非显示区域上。
　　　优选地，所述数据线在所述非显示区域设置有数据线引出线，所述第二放电元件与所述数据线引出线电连接。　　　
　　　本发明还提出一种液晶面板，包括如上所述的阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层。　　　
　　　本发明还提出一种阵列基板的制作方法，该方法包括步骤：
　　　提供一基板，所述基板包括显示区域，在所述显示区域内设置成矩阵状态的多个扫描线和信号线，及设置在所述显示区域边缘且环绕所述显示区域设置的公用电极线；
　　　在所述基板上设置第一放电元件及与所述第一放电元件对应设置的第二放电元件，所述第一放电元件与所述公用电极线电连接，所述第二放电元件与所述数据线电连接。
　　　优选地，所述第一放电元件靠近所述第二放电元件的一端的横截面积小于另一端的横截面积，且所述第二放电元件靠近所述第一放电元件的一端的横截面积小于另一端的横截面积。
　　　优选地，所述第一放电元件与所述扫描线同步形成，所述第二放电元件与所述数据线同步形成。
　　　优选地，所述第一放电元件靠近所述第二放电元件的一端设置为尖端，所述第二放电元件靠近所述第一放电元件的一端设置为尖端。　　　
　　　相对现有技术，本发明通过在阵列基板上设置第一放电元件和第二放电元件，且所述第一放电元件与公用电极线电连接，所述第二放电元件与数据线电连接，在形成所述扫描线和数据线的同时形成或者形成所述扫描线和数据线之后形成所述第一放电元件和所述第二放电元件，实现在阵列基板制作完扫描线和数据线后，在阵列基板后续制程中对制作的元器件起到静电防护的作用，有效避免静电导致阵列基板的某些元器件烧坏而导致良品率降低的问题，提高良品率，进而降低生产成本。　　　
附图说明
　　　图1为现有技术阵列基板中静电防护装置的结构示意图；
　　　图2为现有技术阵列基板中静电防护电路的结构示意图；
　　　图3为本发明阵列基板的较佳实施例的架构示意图；
　　　图4为本发明阵列基板的制作方法的较佳实施例的流程示意图。　　　
　　　本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。　　　
具体实施方式
　　　应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
　　　如图3所示，本发明提供的阵列基板1，包括显示区域11，在所述显示区域11内设置成矩阵状态的多个扫描线12和信号线，及设置在所述显示区域11边缘且环绕所述显示区域11的公用电极线14，还包括第一放电元件16及与所述第一放电元件16对应设置的第二放电元件15，所述第一放电元件16与所述公用电极线14电连接，所述第二放电元件15与所述数据线13电连接。
　　　在本实施例中，该阵列基板1包括设置成矩阵状态的多个扫描线12和信号线，对应的设置多个第一放电元件16及与所述第一放电元件16对应设置的第二放电元件15，各个第一放电元件16与所述公用电极线14电连接，各个第二放电元件15与对应的数据线13电连接。为了减少制作阵列基板1的流程，所述第一放电元件16与所述扫描线12同步形成，所述第二放电元件15与所述数据线13同步形成。所述扫描线12和数据线13之后形成，实现在阵列基板1制作完扫描线12和数据线13后。
　　　为了对阵列基板1制程中的静电起到防护作用，保护阵列基板1中的元器件，所述第一放电元件16靠近所述第二放电元件15的一端17的横截面积小于另一端20的横截面积，且所述第二放电元件15靠近所述第一放电元件16的一端18的横截面积小于另一端21的横截面积。
　　　本实施例通过在阵列基板1上设置第一放电元件16和第二放电元件15，且所述第一放电元件16与公用电极线14电连接，所述第二放电元件15与数据线13电连接，在形成所述扫描线12和数据线13的同时形成或者形成所述扫描线12和数据线13之后形成所述第一放电元件16和所述第二放电元件15，实现在阵列基板1制作完扫描线12和数据线13后，在阵列基板1后续制程中对制作的元器件起到静电防护的作用，有效避免静电导致阵列基板1的某些元器件烧坏而导致良品率降低的问题，提高良品率，进而降低生产成本。　　　
　　　进一步地，为了能更好的对阵列基板1制程中产生的静电起到防护作用，避免静电将阵列基板1的元器件烧坏，所述第一放电元件16靠近所述第二放电元件15的一端17为尖端，所述第二放电元件15靠近所述第一放电元件16的一端18为尖端。　　　
　　　进一步地，为了能更好的将阵列基板1制程中产生的静电释放，所述第一放电元件16与所述第二放电元件15之间具有放电间隙，且所述放电间隙为10 um。在本发明其他实施例中，所述放电间隙也还可以是20 um等其他任意适用的能更好的将阵列基板1制程中产生的静电释放的间隙。　　　
　　　进一步地，为了保证包括该阵列基板1的显示器能有更加的显示效果，所述阵列基板1还包括环绕所述显示区域11的非显示区域11，所述第一放电元件16与所述第二放电元件15均设置在所述非显示区域11上。且所述数据线13在所述非显示区域11设置有数据线13引出线19，所述第二放电元件15与所述数据线13引出线19电连接。　　　
　　　本发明还提出一种液晶面板，包括如上述实施例所述的阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层。所述阵列基板的具体结构如上述实施例所述，在此不再一一详细描述。　　　
　　　如图4所示，本发明还提出一种阵列基板的制作方法，该方法包括步骤：
　　　步骤S11，提供一基板，所述基板包括显示区域，在所述显示区域内设置成矩阵状态的多个扫描线和信号线，及设置在所述显示区域边缘且环绕所述显示区域设置的公用电极线；
　　　步骤S12，在所述基板上设置第一放电元件及与所述第一放电元件对应设置的第二放电元件，所述第一放电元件与所述公用电极线电连接，所述第二放电元件与所述数据线电连接。
　　　具体的，该阵列基板包括设置成矩阵状态的多个扫描线和信号线，对应的设置多个第一放电元件及与所述第一放电元件对应设置的第二放电元件，各个第一放电元件与所述公用电极线电连接，各个第二放电元件与对应的数据线电连接。为了减少制作阵列基板的流程，所述第一放电元件与所述扫描线同步形成，所述第二放电元件与所述数据线同步形成。所述扫描线和数据线之后形成，实现在阵列基板制作完扫描线和数据线后。
　　　以所述第一放电元件与所述扫描线同步形成，所述第二放电元件与所述数据线同步形成为例，在阵列基板上制作扫描线的实现过程为：在所述阵列基板上涂布导电材质和光阻，通过采用特定的光罩对依次涂布导电材质和光阻后的基板的特定区域照射紫外线，即对依次叠加涂布导电材质和光阻后的基板进行曝光过程，将曝光后的基板进行显影，在所述阵列基板上形成矩阵状态的多个扫描线和信号线，与所述公用电极线电连接的第一放电元件，及与所述数据线电连接的第二放电元件。所述特定的光罩为根据光阻的特性在光罩的特定位置进行开口，若光阻为负性光阻，即特定开口区域内的被紫外光照射的光阻将不会被显影洗掉；若光阻为正性光阻，即特定开口区域内的被紫外线照射的光阻将会被显影洗掉。
　　　在本实施例中，制作扫描线和第一放电元件的过程为：若光阻为负性光阻，所述特定的光罩在扫描线和所述第一放电元件的位置设置开口；若光阻为正性光阻，所述特定的光罩在扫描线和所述第一放电元件之外的位置设置开口，按照上述方式制作扫描线和第一放电元件；制作数据线和第二放电元件的过程为：若光阻为负性光阻，所述特定的光罩在数据线和所述第二放电元件的位置设置开口；若光阻为正性光阻，所述特定的光罩在数据线和所述第二放电元件之外的位置设置开口，按照上述方式制作数据线和第二放电元件。
　　　本实施例通过在阵列基板上设置第一放电元件和第二放电元件，且所述第一放电元件与公用电极线电连接，所述第二放电元件与数据线电连接，在形成所述扫描线和数据线的同时形成或者形成所述扫描线和数据线之后形成所述第一放电元件和所述第二放电元件，实现在阵列基板制作完扫描线和数据线后，在阵列基板后续制程中对制作的元器件起到静电防护的作用，有效避免静电导致阵列基板的某些元器件烧坏而导致良品率降低的问题，提高良品率，进而降低生产成本。　　　
　　　进一步地，为了能更好的对阵列基板制程中产生的静电起到防护作用，避免静电将阵列基板的元器件烧坏，所述第一放电元件靠近所述第二放电元件的一端为尖端，所述第二放电元件靠近所述第一放电元件的一端为尖端。　　　
　　　进一步地，为了能更好的将阵列基板制程中产生的静电释放，所述第一放电元件与所述第二放电元件之间具有放电间隙，且所述放电间隙为10 um。在本发明其他实施例中，所述放电间隙也还可以是20 um等其他任意适用的能更好的将阵列基板制程中产生的静电释放的间隙。　　　
　　　进一步地，为了保证包括该阵列基板的显示器能有更加的显示效果，所述阵列基板还包括环绕所述显示区域的非显示区域，所述第一放电元件与所述第二放电元件均设置在所述非显示区域上。且所述数据线在所述非显示区域设置有数据线引出线，所述第二放电元件与所述数据线引出线电连接。　　　
　　　以上所述仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种阵列基板，包括显示区域，在所述显示区域内设置成矩阵状态的多个扫描线和信号线，及设置在所述显示区域边缘且环绕所述显示区域的公用电极线，其特征在于，还包括第一放电元件及与所述第一放电元件对应设置的第二放电元件，所述第一放电元件与所述公用电极线电连接，所述第二放电元件与所述数据线电连接。
  2. 根据权利要求1所述的阵列基板，其特征在于，所述第一放电元件靠近所述第二放电元件的一端的横截面积小于另一端的横截面积，且所述第二放电元件靠近所述第一放电元件的一端的横截面积小于另一端的横截面积。
  3. 根据权利要求1所述的阵列基板，其特征在于，所述第一放电元件靠近所述第二放电元件的一端为尖端，所述第二放电元件靠近所述第一放电元件的一端为尖端。
  4. 根据权利要求3所述的阵列基板，其特征在于，所述第一放电元件与所述第二放电元件之间具有放电间隙。
  5. 根据权利要求4所述的阵列基板，其特征在于，所述放电间隙为10 um。
  6. 根据权利要求3所述的阵列基板，其特征在于，还包括环绕所述显示区域的非显示区域，所述第一放电元件与所述第二放电元件均设置在所述非显示区域上。
  7. 根据权利要求6所述的阵列基板，其特征在于，所述数据线在所述非显示区域设置有数据线引出线，所述第二放电元件与所述数据线引出线电连接。
  8. 根据权利要求1所述的阵列基板，其特征在于，所述第一放电元件与所述第二放电元件之间具有放电间隙。
  9. 根据权利要求8所述的阵列基板，其特征在于，所述放电间隙为10 um。
  10. 根据权利要求1所述的阵列基板，其特征在于，还包括环绕所述显示区域的非显示区域，所述第一放电元件与所述第二放电元件均设置在所述非显示区域上。
  11. 根据权利要求10所述的阵列基板，其特征在于，所述数据线在所述非显示区域设置有数据线引出线，所述第二放电元件与所述数据线引出线电连接。
  12. 一种液晶面板，其特征在于，包括阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层，该阵列基板为权利要求1至11任一项所述的阵列基板。
  13. 一种阵列基板的制作方法，其特征在于，该方法包括步骤：
    　　　提供一基板，所述基板包括显示区域，在所述显示区域内设置成矩阵状态的多个扫描线和信号线，及设置在所述显示区域边缘且环绕所述显示区域设置的公用电极线；
    　　　在所述基板上设置第一放电元件及与所述第一放电元件对应设置的第二放电元件，所述第一放电元件与所述公用电极线电连接，所述第二放电元件与所述数据线电连接。
  14. 根据权利要求13所述的制作方法，其特征在于，所述第一放电元件靠近所述第二放电元件的一端的横截面积小于另一端的横截面积，且所述第二放电元件靠近所述第一放电元件的一端的横截面积小于另一端的横截面积。
  15. 根据权利要求13所述的制作方法，其特征在于，所述第一放电元件与所述扫描线同步形成，所述第二放电元件与所述数据线同步形成。
  16. 根据权利要求15所述的制作方法，其特征在于，所述第一放电元件靠近所述第二放电元件的一端设置为尖端，所述第二放电元件靠近所述第一放电元件的一端设置为尖端。
  17. 根据权利要求13所述的制作方法，其特征在于，所述第一放电元件靠近所述第二放电元件的一端设置为尖端，所述第二放电元件靠近所述第一放电元件的一端设置为尖端。
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