WO2014140047A2 - Method and device for writing photomasks with reduced mura errors - Google Patents

Method and device for writing photomasks with reduced mura errors Download PDF

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Publication number
WO2014140047A2
WO2014140047A2 PCT/EP2014/054750 EP2014054750W WO2014140047A2 WO 2014140047 A2 WO2014140047 A2 WO 2014140047A2 EP 2014054750 W EP2014054750 W EP 2014054750W WO 2014140047 A2 WO2014140047 A2 WO 2014140047A2
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WIPO (PCT)
Prior art keywords
degrees
writing
angle
fiducials
pattern
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PCT/EP2014/054750
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French (fr)
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WO2014140047A3 (en
Inventor
Torbjörn Sandström
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Micronic Mydata AB
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Publication of WO2014140047A2 publication Critical patent/WO2014140047A2/en
Publication of WO2014140047A3 publication Critical patent/WO2014140047A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation

Abstract

The problem of mura in large area photomasks is solved or at least reduced by setting up a writing system to write a pattern with high accuracy and with the optical axes essentially parallel to the movement axes of the stage, then writing photomasks in two passes with the substrate rotated to different angles on the stage. The angle between the orientation of the first and second pass is larger than about 10 degrees, larger than about 20 degrees or larger than about 35 degrees and it can be approximately 10 degrees, approximately 50 degrees, approximately 60 degrees or approximately 90 degrees. The substrate is physically rotated on the stage and aligned with high accuracy after the rotation and the data driving the first and second exposure passes are derived from the first input data specification but processed according to the known oblique angles, so that the second pass is accurately overlaid on the first pass.

Description

METHOD AND DEVICE FOR WRITING PHOTOMASKS WITH
REDUCED MURA ERRORS
RELATED APPLICATION
[0001] This application claims the benefit of US Provisional Application No.
61/777,978, filed on 12 March 2013, which is hereby incorporated by reference.
[0002] This application is related to US Patent No. 8,160,351 entitled "METHOD
AND APPARATUS FOR MURA DETECTION AND METROLOGY" (MLSE 1078-2, P00314) and US Patent No. 7,411 ,651 entitled "PSM ALIGNMENT METHOD AND DEVICE" (MLSE 1042-2, P00183). It is also related to US Patent Application Nos.
13/314,063 entitled "CRISS-CROSS WRITING STRATEGY" (MLSE 11 18-2, P00377) and 11/586,614 entitled "WRITING APPARATUSES AND METHODS" (HDP drum) by the same inventor. It also is related to US Provisional Application No. 61/777,469 entitled "MECHANICALLY PRODUCED ALIGNMENT FIDUCIAL METHOD AND DEVICE" (MLSE 1138-1, P00404) by the same inventor. The related applications are incorporated by reference.
BACKGROUND
[0003] It is known that the writing of photomasks for visible displays and imaging camera devices is prone to defects called "mura", i.e. stripes and moire patterns which come from interactions between the pattern and the writing hardware. Grid snap, small
imperfections in the writing system and rasterizing artifacts may give rise to systematic errors that show up as intensity or color bands, stripes or curves in the finished product. Writing with the hardware, e.g. pixel grid and stage movements, parallel to the repeating directions of the mask pattern is considered to give predictable and reliable writing properties. However, at the same time it is prone to mura.
[0004] In FIGS. 1A-1B, a single pixel 104 with a defect in the writing hardware may define defective stripes 1 14. A defective stripe 114 may define an edge 1 12 of a column 106 of features 110 in the mask pattern and a nearby column of features may be defined by different pixels 102 not including the single pixel 104 with a defect. If the pixels are not identical, e.g. having different exposure energy, the two columns may be visibly different. FIG. 1A shows a scan line 100 in a laser scanner with pixels 102 and a pixel 104 with a defect. FIG. IB shows how this defective pixel gives defective stripes 114 in a regular pattern. The customary remedy is to adapt the writing so that the same pixel is used for every equivalent edge, so-called scan length adaption. There are cases when it is difficult to use this type of adaption, such as when there are features with several pitches in the mask pattern, where the features are not forming straight lines, or when the throughput loss associated with scan length adaption is unaffordable. It has been proposed by the same inventor to write the pattern obliquely by employing a writer with the hardware axes rotated relative to the stage. With writing at oblique angles multiple pixels in the writing hardware contributes to any feature edge and other edges use the same or other pixels in a less repetitive manner. Thus systematic errors are thus reduced and mura is suppressed.
[0005] In the case of a one-dimensional writing mechanism such as a laser scanner or a one-dimensional spatial light modulator there is an asymmetry between primary axis, the direction along and the secondary direction across the direction of the scan line or spatial light modulator. The same inventor has proposed writing a pattern in two passes with rotated primary axes in order to make the asymmetry between the primary and secondary axes less pronounced. See US Patent Application No. 13/314,063 entitled "CRISS-CROSS WRITING STRATEGY" (MLSE 11 18-2, P00377), incorporated by reference.
[0006] The current application teaches a practical method for reducing mura without building the system with oblique movements or an oblique writing head. The technology disclosed can therefore be used in a standard writing system with small changes and the use of the technology disclosed can be interspersed with writing operations without using it, e.g. in single pass writing.
SUMMARY
[0007] The problem of mura in large area photomasks is solved or at least reduced by setting up a writing system to write a pattern with high accuracy and with the optical axes essentially parallel to the movement axes of the stage, then writing photomasks in two passes with the substrate rotated to different angles on the stage. The angle between the orientation of the first and second pass is larger than about 10 degrees, larger than about 20 degrees or larger than about 35 degrees and it can be approximately 10 degrees, approximately 50 degrees, approximately 60 degrees or approximately 90 degrees. The substrate is physically rotated on the stage and aligned with high accuracy after the rotation and the data driving the first and second exposure passes are derived from the first input data specification but processed according to the known oblique angles, so that the second pass is accurately overlaid on the first pass. BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1A shows a scan line 100 in a laser scanner with pixels 102 and a pixel
104 with a defect.
[0009] FIG. IB shows how this defective pixel gives defective stripes 112 in a regular pattern.
[0010] FIG. 2 shows writing at a rotation angle and how the effects of the defective pixel in FIG. 1A are dispersed in the regular pattern resulting in defective stripes 214 that do not define edges 212 of columns 206 of features 210.
[0011] FIG. 3 shows an example procedure writing two passes with a reorientation between the passes in a writer having a larger stage than the size of the substrate which is written.
[0012] FIG. 4 shows example methods to form fiducials
[0013] FIG. 5 shows a flowchart of an example procedure for the technology disclosed.
[0014] FIG. 6 shows examples of mechanical indentations which can be used for alignment
DETAILED DESCRIPTION
[0015] Description of the technology disclosed will be made based on mechanical indentation of fiducials in the photoresist layer. Alternative embodiments based on laser ashing or ablation or deposition of a material substance (particles, ink-jet drops, etc.) on the photomask substrate or the surface of the photoresist film are also possible and will be apparent. The fiducials can be formed during manufacturing of the substrate or in connection with the writing of the first pattern. What is essential is that the fiducials are formed and measured prior to the physical rotation of the substrate between the first and second writing passes. [0016] Applying the technology disclosed, a pattern can be written with high fidelity and suppression of signatures from the writer itself. The pattern is written several times in at least two passe, with the workpiece physically rotated at least once between writing passes. Applying the technology disclosed, fiducials can be formed before the writing starts (or immediately before the rotation) and used to align the passes, accurately but with an extremely precise rotation of the passes.
[0017] FIG. 2 shows writing at a rotation angle and how the effects of the defective pixel 204 in a swath 200 are dispersed in the regular pattern resulting in defective stripes 214 that do not define edges 212 of columns 206 of features 210.
[0018] FIG. 3 shows oblique writing of a workpiece with two passes with different oblique angles. In this implementation, a mass blank is rotated to produce different oblique angles. The storyboard shows seven steps. The first step is to place a blank, such as a G8 size mask on a stage in the first oblique angle. Because the mask is placed at an angle, the stage is larger than the mask, such as a P10 stage for a G8 mask (G8 is commonly understood to mean generation 8 LCD manufacturing technology and P10 is Micronic-My data's writer for generation 10 photomasks). Step two is to make alignment marks on the mask. This step can be carried out, as described above, at a separate station after application of the radiation sensitive layer, or it can be carried out on the stage. Step three is to measure the position of the alignment marks and record their position relative to the first coordinate system. Note that steps two and three can follow the first exposure in step four, if precautions are taken so that the formation of the alignment marks does not upset the position of the workpiece relative to the writing coordinate system. Step five involves turning the blank to a second oblique angle. In step six, the alignment marks are located and measured. A second coordinate system is established or the first coordinate system is reoriented to facilitate alignment of a second exposure with the first exposure. Step seven involves writing a second exposure, which may be a second exposure of the same layer as in step four.
[0019] Optically visible fiducials in or on the exposure sensitive layer can be detected without transfer and effectively used when writing a single layer with two exposures separated by a mechanical rotation of the workpiece. For instance, a pattern can be written with the workpiece placed at a first oblique angle to the desired pattern. The workpiece can be rotated in preparation for writing at a second oblique angle to the desired pattern. The optically visible fiducials in or on the exposure sensitive layer can be used to align the first and second writing passes accurately, following physical rotation of the workpiece. The workpiece on a stage can be rotated at an angle of five degrees, 10 degrees, at least 10 degrees, or 10 to 45 degrees to a primary or secondary axis of features in the desired pattern.
[0020] The two angles should be essentially symmetrical, but not necessarily exactly symmetrical. Generally speaking the method is more effective the closer to 90 degrees one can make the angle between the passes, but it may be advantageous to avoid hitting 90 degrees exactly since 45 degrees to the x and y directions is a mura-sensitive direction. It is not necessary that the two directions are symmetrical to the stage coordinate directions and it may in fact be beneficial to have a slight asymmetry, e.g. five degrees difference between the clockwise and counter-clockwise direction. Small oblique angles give less effective suppression ofmura, and oblique angles larger than approximately 5 degrees, i.e. angle difference between the passes may be larger than approximately 10 degrees. The effectiveness rises and around 30 degrees oblique angle, e.g. approximately 60 degrees or at least above 50 degrees give a stronger effect. For the strongest effect the oblique angles can be above 35 degrees and the angle between the passes above approximately 70 degrees. Due to symmetry around 90 degrees the difference angle should then be between approximately 70 and 1 10 degrees.
[0021] The optically visible fiducials can be applied at various times after the exposure sensitive layer is applied and before the workpiece is removed from the patterning device. For instance, if mask blanks arrive at a patterning shop with resist already applied, the optically visible fiducials can be applied by the supplier of the blanks. Alternatively, marks can be applied in a workstation adjacent to the patterning device immediately before the first writing pass. Or, a tool for creating the optically visible fiducials can be incorporated into the writing device, so that the fiducials are created before, during or after the first writing pass. The position of the optically visible fiducials is measured relative to the pattern written in the first writing pass. The position of the fiducials relative to the workpiece being pattemed is not critical; the position relative to the pattern can readily be used for alignment between writing passes, with a mechanical reorientation in the workpiece between writing passes.
[0022] A variety of methods are available for forming optically visible fiducials by physical modification of the surface of the photoresist layer, by laser ablation, deposition of a fine pattern by dusting, spraying, ink-jetting or similar techniques, or by mechanical indentation. Mechanical indentation gives small marks with high optical contrast and is flexible since indentation can be made in the photoresist, in other polymer films and etch masks, through the photoresist into the film to be patterned, or into the substrate..
[0023] Mechanical indentation as in FIG. 4 using a sharp diamond pyramid similar to a Rockwell hardness tester makes a mark in the photoresist which can be easily seen with an optical sensor. For redundancy and error averaging a fiducial can consist of a number of indentation marks, FIG. 6, e.g. less than 10, less than 100, more than 5, more than 20. The optical sensor can be a camera, a microscope, a line scan camera or the reflection of a writing beam in the optical writer.
[0024] The technology disclosed further includes methods and writing systems for forming, by dry methods, optically visible fiducials in an exposure sensitive layer of the workpiece and measuring their positions on a workpiece. A first exposure pattern is formed either before or after the fiducials are created. The position of the fiducials is re -measured when the workpiece is reloaded for a second exposure. The measured position of the fiducials is use to align the second exposure. Typically, machine errors or biases enter identically in both exposures and do not give rise to overlay errors or misalignment. . If there is a constant position error between measuring and writing, e.g. a position offset, this error goes into the overlay error between the layers in the prior used method. In the technology disclosed, the constant error goes identically into both writing operations, thereby reducing differential errors. If there is a non-constant error it is also reduced since the procedure to measure fiducials and write is identical in both layers, which minimizes the differential influence of thermal drift, memory effects, and similar systematic but unknown effects.
[0025] FIG. 5 shows a high level flow chart of example processes. In the top half of the flow chart, parallel paths preceded by "do both" indicate steps that can be performed in various orders. As explained above, optically visible fiducials can be formed before or after loading a workpiece into a writing system and writing the first pattern layer. Whatever the order of the steps, the position of the fiducials is recorded in the same coordinate system as used to write the first exposure. It is important to understand that the fiducials do not need to be formed with any geometrical precision, since they do not define the first coordinate system. The first coordinate system is defined by the precision stage and stage metrology of the writing system. The fiducials are used to transfer the position of the first coordinate system from the first writing operation to the second writing operation, so that the second coordinate system can be accurately positioned relative to the first coordinate system. The first and second coordinate system may be aligned to give a relative translation or rotation with high precision. Furthermore, when the positions of the fiducials are known in the first coordinate system the second coordinate system, which is generally defined by the stage metrology, can be fine adjusted for scale, orthogonality, and keystone and other distortions, so that it not only coincides with the first coordinate system, but becomes identical to it with high precision. This is the meaning of "Aligning the second pass" in FIG. 5. Particular Implementations
[0026] In one implementation, a method is described for writing a pattern according to an input pattern specification with repeated features on a large area photomask or a camera detector photomask with suppressed mura errors. This method includes providing a stage and a writing head with x-y Cartesian relative movement, the x-y movements being essentially perpendicular. The writing head has primary and secondary axes oriented essentially parallel and perpendicular to x-y movements. The method includes loading a photomask substrate at a first rotation angle larger than 5 degrees to the x-y relative movements and exposing a first pattern in a first pass, physically rotating the photomask substrate to a second rotation angle at least 10 degrees from the first rotation angle, and exposing a second pass with a second pattern in a second pass. Practicing this method, the first and second pattern can be based on the same input pattern specification, accurately overlaid between the exposure passes. The first and second exposures can be written without development of an exposure sensitive layer on the workpiece.
[0027] This method and other implementations the technology disclosed can each optionally include one or more the following features. The angle between the passes can be larger than 40 degrees. The angle between the passes can be approximately 60 degrees. The angle between the passes can be larger than 70 degrees. The angle between the passes can be approximately 90 degrees.
[0028] The writing head can be a multibeam acoustooptic scanner, a multibeam polygon scanner, a one-dimensional spatial modulator, or other writing head. [0029] The substrate can have a photoresist film with alignment fiducials formed in or on the photoresist layer and used for aligning the first and second passes. The fiducials can be formed by mechanical indentation. They can be formed by laser radiation or formed by deposition of a substance on the surface of the photomask substrate or photoresist film.
[0030] One implementation of the technology disclosed is a method of aligning a workpiece between two exposure patterning operations. This method includes forming fiducials by a dry method in or on an exposure sensitive layer on a workpiece. It further includes measuring and recording first position information of the fiducials in a first coordinate system used by a writing system to apply a first exposure to the workpiece. In conjunction with this method, the workpiece is physically moved and repositioned in the writing system, which requires further alignment. The alignment consists rotating the second coordinate system based on the second position information, and may optionally also involve fine correction of scale, orthogonality, keystone and other distortions. The method optionally includes applying a second exposure to the workpiece using the second coordinate system.
[0031] This method and any of the following variations can be extended by processing exposed patterns on the workpiece to produce electronic structures of a fiat-panel display. These electronic structures may be, without limitation, light emitting diodes, plasma cells, or a liquid crystal shutters. They also may be filters or control components.
[0032] The foregoing methods can be combined with one or more the following features. In some implementations, the dry method forms the fiducials in a polymer layer of photoresist.
[0033] When the workplace is replaced in the writing system, it is rotated between writing of two exposures of the exposure sensitive layer.
[0034] Applying this method, the measuring and recording position information can share optical components with the writing of the exposures to the exposure sensitive layer(s).
[0035] This system can be combined with one or more of the following features. In one implementation, the dry fiducial forming station can physically modify a polymer layer of photoresist. It can include a point and a ram that form the fiducials by mechanical indentation. The mechanical indentation can expose a first patterning layer on the workpiece through the exposure sensitive layer. Or, the mechanical indentation can at least partially penetrate a first patterning layer on the workpiece underlying the exposure sensitive layer. [0036] In some implementations, the dry fiducial forming station includes a writing head that deposits material on the exposure sensitive layer.
[0037] In some implementations, the dry fiducial forming station includes a laser and optics that ash or ablate the exposure sensitive layer.
[0038] The system optics, detector and location processor can further estimate a rotation of the workpiece between the writing of two exposures of the exposure sensitive layer. Or, they can estimate a rotation of the workpiece between the writing of exposures to two different exposure sensitive layers on the workpiece.
[0039] The optics used with the detector and the location processor may also be used by writing system to apply the exposures to the exposure sensitive layer(s).
[0040] While the technology disclosed is disclosed by reference to the embodiments and examples detailed above, it is understood that these examples are intended in an illustrative rather than in a limiting sense. Computer-assisted processing is implicated in the described implementations. It is contemplated that modifications and combinations will readily occur to those skilled in the art, which modifications and combinations will be within the spirit of the technology disclosed and the scope of the following claims.
[0041] We claim as follows:

Claims

1. A method for writing a pattern according to an input pattern specification with repeated features on a large area photomask or a camera detector photomask with suppressed mura errors, comprising:
providing a stage and a writing head with x-y relative movements, the x relative movements being essentially perpendicular to the y relative movements,
said writing head having a primary axis and a secondary axis essentially aligned with the x-y relative movements,
loading a photomask substrate at a first rotation angle larger than 5 degrees to the x-y relative movements and exposing a first pattern in a first pass,
physically rotating the photomask substrate to a second rotation angle at least 10 degrees from the first rotation angle and exposing a second pattern in a second pass,
wherein the first and second patterns are based on the same input pattern specification and are aligned in the first and second passes.
2. The method of claim 1, wherein the first and second rotation angles are essentially symmetrical to one of the x relative movement or y relevant movement.
3. The method of claim 2, wherein the difference between the first and second rotation angles is 5 degrees or less.
4. The method of claim 1 , wherein the angle between the first and second rotation angles is larger than 40 degrees.
5. The method of claim 1 , wherein the angle between the first and second rotation angles is approximately 60 degrees.
6. The method of claim 1, wherein the angle between the first and second rotation angles is larger than 70 degrees.
7. The method of claim 1, wherein the angle between the first and second rotation angles is approximately 90 degrees.
8. The method of claim 1, wherein the writing head is a multibeam acoustooptic scanner.
9. The method of claim 1, wherein the writing head is a multibeam polygon scanner.
10. The method of claim 1 , wherein the writing head is a one-dimensional spatial modulator.
1 1. The method of claim 1 , wherein the substrate has a photoresist film and alignment fiducials are formed in or on the photoresist layer and used for aligning the first and second passes.
12. The method of claim 9, wherein the fiducials are formed by mechanical indentation.
13. The method of claim 9, wherein the fiducials are formed by laser radiation.
14. The method of claim 9, wherein the fiducials are formed by deposition of a substance on the surface of the photomask substrate or photoresist film.
PCT/EP2014/054750 2013-03-12 2014-03-11 Method and device for writing photomasks with reduced mura errors WO2014140047A2 (en)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6453780B2 (en) * 2013-03-12 2019-01-16 マイクロニック アーベーＭｙｃｒｏｎｉｃ Ａｂ Method and apparatus for mechanically formed alignment reference body
KR102418581B1 (en) 2015-10-21 2022-07-08 삼성전자주식회사 Method of generating a pattern on a workpiece and pattern generator for performing the same
US11002953B2 (en) * 2016-06-21 2021-05-11 The Regents Of The University Of California MEMS-based spatial light modulator and method of forming
CN105929639B (en) * 2016-06-29 2017-12-29 武汉华星光电技术有限公司 The ameliorative way of exposure machine microscope group striped
JP7199432B2 (en) * 2017-10-25 2023-01-05 アクセリス テクノロジーズ， インコーポレイテッド Shallow Angle, Multi-Wavelength, Multi-Receiver, Adjustable Sensitivity Aligner Sensor for Semiconductor Manufacturing Equipment
US10755133B2 (en) * 2018-02-22 2020-08-25 Samsung Display Co., Ltd. System and method for line Mura detection with preprocessing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411651B2 (en) 2003-08-04 2008-08-12 Micronic Laser Systems Ab PSM alignment method and device
US8160351B2 (en) 2007-04-18 2012-04-17 Micronic Mydata AB Method and apparatus for mura detection and metrology

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131782A (en) 1976-05-03 1978-12-26 Lasag Ag Method of and apparatus for machining large numbers of holes of precisely controlled size by coherent radiation
US4322260A (en) 1979-04-04 1982-03-30 Monsanto Company Process for the continuous extrusion forming of a plastic double-walled foam-core conduit
US4377736A (en) 1981-08-14 1983-03-22 General Electric Company Method and apparatus for removing material from a surface
LU84687A1 (en) 1983-03-11 1984-11-14 Centre Rech Metallurgique PROCESS FOR IMPROVING THE SURFACE CONDITION OF A CYLINDER
US4533813A (en) 1983-09-06 1985-08-06 Illinois Tool Works Inc. Optical selective demetallization apparatus
US4652722A (en) 1984-04-05 1987-03-24 Videojet Systems International, Inc. Laser marking apparatus
US4734746A (en) 1985-06-24 1988-03-29 Nippon Kogaku K. K. Exposure method and system for photolithography
US4758705A (en) 1985-08-06 1988-07-19 Eastman Kodak Company Method and apparatus for texturing a roller
US4812661A (en) 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
JPH0671038B2 (en) 1987-03-31 1994-09-07 株式会社東芝 Crystal defect recognition processing method
US4977458A (en) 1988-11-16 1990-12-11 Eastman Kodak Company Apparatus for addressing a font to suppress Moire patterns occurring thereby and a method for use therein
JPH02308291A (en) 1989-05-24 1990-12-21 Onoda Cement Co Ltd Heat fixing roll for copying machine and its manufacture
FR2657219B1 (en) 1990-01-11 1994-02-18 Gim Industrie Sa METHOD FOR MANUFACTURING FLEXIBLE PRINTED CIRCUITS, PRINTED CIRCUIT MANUFACTURED BY THIS METHOD, AND DEVICE FOR CARRYING OUT SAID METHOD.
US5049901A (en) 1990-07-02 1991-09-17 Creo Products Inc. Light modulator using large area light sources
GB2246733A (en) 1990-08-09 1992-02-12 Cmb Foodcan Plc Apparatus and method for monitoring laser material processing
WO1992008322A1 (en) 1990-10-30 1992-05-14 Simco/Ramic Corporation Color line scan video camera for inspection system
US5147680A (en) 1990-11-13 1992-09-15 Paul Slysh Laser assisted masking process
JP2810532B2 (en) 1990-11-29 1998-10-15 キヤノン株式会社 Method and apparatus for forming deposited film
JP2918366B2 (en) 1991-09-04 1999-07-12 大日本スクリーン製造株式会社 Cylindrical inner surface scanning type image recording device
EP0558781B1 (en) 1992-03-05 1998-08-05 Micronic Laser Systems Ab Method and apparatus for exposure of substrates
US5668588A (en) 1993-04-01 1997-09-16 Dainippon Screen Mfg. Co., Ltd. Spiral scanning image recording apparatus and image recording method
IL106188A (en) 1993-06-30 1996-10-31 Scitex Corp Ltd Internal drum plotter
JPH07101032A (en) 1993-09-30 1995-04-18 Sony Corp Laser plate-making apparatus and printing plate
US5917935A (en) 1995-06-13 1999-06-29 Photon Dynamics, Inc. Mura detection apparatus and method
JPH0927447A (en) 1995-07-11 1997-01-28 Nikon Corp Stage drive controller
WO1998027798A1 (en) 1996-12-19 1998-06-25 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
US5868075A (en) 1997-02-26 1999-02-09 Presstek, Inc. Method and apparatus for imaging a seamless print medium
US6154561A (en) 1997-04-07 2000-11-28 Photon Dynamics, Inc. Method and apparatus for detecting Mura defects
JPH10300447A (en) 1997-04-23 1998-11-13 K L Ee Akurotetsuku:Kk Method and device for detecting unevenness of surface pattern
SE508228C2 (en) 1997-05-07 1998-09-14 Inst Verkstadstek Forsk Ivf Device for detecting and calculating the focus position, shape and power distribution of a laser beam
DE59803072D1 (en) 1997-05-14 2002-03-21 Luescher Ursula SYSTEM FOR EXPOSING PRINTING PLATES AND THE USE THEREOF
US6586702B2 (en) 1997-09-25 2003-07-01 Laser Electro Optic Application Technology Company High density pixel array and laser micro-milling method for fabricating array
SE9800665D0 (en) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6066830A (en) 1998-06-04 2000-05-23 Astronics Corporation Laser etching of electroluminescent lamp electrode structures, and electroluminescent lamps produced thereby
DE69921739T2 (en) 1998-07-03 2005-11-03 Fuji Photo Film Co., Ltd., Minami-Ashigara The image recording device
US6130405A (en) 1998-09-10 2000-10-10 Chromalloy Gas Turbine Corporation Laser drilling holes in a cylindrical workpiece
US6489984B1 (en) 1998-12-29 2002-12-03 Kenneth C. Johnson Pixel cross talk suppression in digital microprinters
US6635311B1 (en) 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US6424879B1 (en) 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
AU4715300A (en) 1999-05-03 2000-11-17 Etec Systems, Inc. Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
US6765945B2 (en) 1999-09-27 2004-07-20 Cymer, Inc. Injection seeded F2 laser with pre-injection filter
IL130340A0 (en) 1999-06-07 2000-06-01 Scitex Corp Ltd Multibeam multi-wavelength internal drum recording apparatus
US6985261B2 (en) 2000-03-08 2006-01-10 Esko-Graphics A/S Method and apparatus for seamless imaging of sleeves as used in flexography
US6625181B1 (en) 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
JP2002311597A (en) 2001-04-13 2002-10-23 Mitsubishi Heavy Ind Ltd Engraving device
JP4041336B2 (en) 2001-06-29 2008-01-30 シャープ株式会社 Substrate for liquid crystal display device, liquid crystal display device including the same, and manufacturing method thereof
KR100877449B1 (en) 2001-07-09 2009-01-07 요시로 야마다 Surface inspection apparatus and method
JP3431075B2 (en) 2001-08-27 2003-07-28 科学技術振興事業団 Liquid crystal display panel unevenness classification processing method, apparatus and program
JP4083427B2 (en) 2001-12-27 2008-04-30 旭化成ケミカルズ株式会社 High-definition grid line pattern creation program
US6900826B2 (en) 2002-02-19 2005-05-31 Presstek, Inc. Multiple resolution helical imaging system and method
US6709962B2 (en) 2002-03-19 2004-03-23 N. Edward Berg Process for manufacturing printed circuit boards
JP3731566B2 (en) 2002-06-28 2006-01-05 ソニー株式会社 Exposure method, mask manufacturing method, and semiconductor device manufacturing method
JP2004098559A (en) 2002-09-11 2004-04-02 Fuji Photo Film Co Ltd Image recording method and image recorder
US6853491B1 (en) 2003-11-26 2005-02-08 Frank Ruhle Collimating optical member for real world simulation
JP2004175078A (en) 2002-11-29 2004-06-24 Fuji Photo Film Co Ltd Image exposure method and image exposure device
CA2448193A1 (en) 2002-12-09 2004-06-09 Heidelberger Druckmaschinen Aktiengesellschaft Method and device for imaging a printing form
US7308157B2 (en) 2003-02-03 2007-12-11 Photon Dynamics, Inc. Method and apparatus for optical inspection of a display
CN1780935B (en) 2003-07-16 2010-05-05 柯尼卡美能达控股株式会社 Method for forming thin film and base having thin film formed by such method
JP2005055881A (en) 2003-07-22 2005-03-03 Fuji Photo Film Co Ltd Drawing method and drawing apparatus
JP4348476B2 (en) 2003-07-25 2009-10-21 株式会社オーク製作所 Pattern drawing device
JP4312535B2 (en) 2003-08-06 2009-08-12 シャープ株式会社 Pattern exposure equipment
JP4203649B2 (en) 2003-09-05 2009-01-07 株式会社オーク製作所 Multiple exposure drawing method and multiple exposure drawing apparatus
US20050104953A1 (en) 2003-09-16 2005-05-19 Fuji Photo Film Co., Ltd. Image exposure method and image exposure apparatus
WO2005029178A2 (en) * 2003-09-22 2005-03-31 Orbotech Ltd. A system and method for the direct imaging of color filters
US20050088664A1 (en) 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
JP2005203697A (en) 2004-01-19 2005-07-28 Fuji Photo Film Co Ltd Multi-beam exposure apparatus
DE102004008074A1 (en) 2004-02-19 2005-09-15 Heidelberger Druckmaschinen Ag Method and test form for adjusting the exposure heads in an imagesetter for printing originals
JP4124747B2 (en) 2004-02-23 2008-07-23 ライトロン株式会社 Fine structure inspection apparatus and fine structure inspection method
US7561251B2 (en) 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005291874A (en) 2004-03-31 2005-10-20 Hoya Corp Unevenness defect inspection method and device of pattern
US6822192B1 (en) 2004-04-19 2004-11-23 Acme Services Company, Llp Laser engraving of ceramic articles
JP4480001B2 (en) 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 Nonuniformity defect inspection mask, nonuniformity defect inspection apparatus and method, and photomask manufacturing method
JP4480002B2 (en) 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 Nonuniformity defect inspection method and apparatus, and photomask manufacturing method
JP2004351938A (en) 2004-07-20 2004-12-16 Mitsubishi Heavy Ind Ltd Platemaking apparatus
US7625063B2 (en) 2004-11-04 2009-12-01 Applied Materials, Inc. Apparatus and methods for an inkjet head support having an inkjet head capable of independent lateral movement
JP4480009B2 (en) 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 Defect inspection apparatus and method, and photomask manufacturing method
JP4583155B2 (en) 2004-12-13 2010-11-17 Ｈｏｙａ株式会社 Defect inspection method and system, and photomask manufacturing method
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7394479B2 (en) 2005-03-02 2008-07-01 Marken Corporation Pulsed laser printing
JP4628824B2 (en) 2005-03-10 2011-02-09 富士フイルム株式会社 Film defect inspection apparatus and film manufacturing method
JP4501798B2 (en) 2005-07-08 2010-07-14 王子製紙株式会社 Inkjet recording medium
WO2007013351A1 (en) 2005-07-25 2007-02-01 Fujifilm Corporation Image recording device and method
EP1987397A4 (en) 2005-10-26 2015-08-19 Micronic Mydata AB Writing apparatuses and methods
US8122846B2 (en) * 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
US8253768B2 (en) 2005-12-09 2012-08-28 Ricoh Company, Ltd. Optical scanner and image forming apparatus
US7806731B2 (en) 2005-12-29 2010-10-05 Sandisk Corporation Rounded contact fingers on substrate/PCB for crack prevention
US20080199068A1 (en) 2007-01-10 2008-08-21 Duquette David W Inspection System
DE102007010906A1 (en) 2007-03-05 2008-09-11 Seereal Technologies S.A. Imaging device for influencing incident light
US8330782B2 (en) 2007-04-26 2012-12-11 Kodak Graphics Communications Canada Company Imaging a plurality of images using a plurality of non-parallel scan paths
US7835054B2 (en) 2007-07-02 2010-11-16 Texas Instruments Incorporated Optical architecture having a rotating polygon for use in imaging systems
JP2009239247A (en) 2008-03-27 2009-10-15 Ibiden Co Ltd Method of manufacturing multilayer printed circuit board
DE112009000965B4 (en) 2008-05-09 2020-08-20 Hoya Corp. Reflective mask and method of making a reflective mask
EP2151717A1 (en) 2008-08-05 2010-02-10 ASML Holding N.V. Full wafer width scanning using step and scan system
CN102362226B (en) 2008-12-05 2014-11-05 麦克罗尼克迈达塔有限责任公司 Rotating arm for writing or reading an image on a workpiece
US8531755B2 (en) 2009-02-16 2013-09-10 Micronic Laser Systems Ab SLM device and method combining multiple mirrors for high-power delivery
JP5182143B2 (en) 2009-02-19 2013-04-10 ソニー株式会社 Manufacturing method of semiconductor device
IL198719A0 (en) 2009-05-12 2010-02-17 Orbotech Ltd Optical imaging system
NL2004531A (en) 2009-05-29 2010-11-30 Asml Netherlands Bv APPARATUS AND METHOD FOR PROVIDING RESIST ALIGNMENT MARKS IN A DOUBLE PATTERNING LITHOGRAPHIC PROCESS.
JP5284212B2 (en) 2009-07-29 2013-09-11 株式会社東芝 Manufacturing method of semiconductor device
CN102713737B (en) 2010-01-15 2015-04-08 夏普株式会社 Liquid crystal display device and method for manufacturing same
US8767175B2 (en) 2010-03-05 2014-07-01 Micronic Laser Systems Ab 1.5D SLM for lithography
US8283192B2 (en) 2010-06-02 2012-10-09 Canon Kabushiki Kaisha Method of forming pattern and method of producing solid-state image pickup device
US20120140193A1 (en) 2010-12-03 2012-06-07 Nanya Technology Corporation Dynamic wafer alignment method in exposure scanner system
EP2649494B1 (en) * 2010-12-07 2014-08-20 Micronic Mydata AB Criss-cross writing strategy
JP5737922B2 (en) 2010-12-14 2015-06-17 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． Manufacturing method of semiconductor device
US8967992B2 (en) 2011-04-25 2015-03-03 Canon Nanotechnologies, Inc. Optically absorptive material for alignment marks
JP5455973B2 (en) 2011-05-27 2014-03-26 三菱電機株式会社 Method for manufacturing silicon carbide semiconductor device
JP5162006B2 (en) 2011-06-01 2013-03-13 キヤノン株式会社 Detection apparatus, exposure apparatus, and device manufacturing method
JP2012256737A (en) 2011-06-09 2012-12-27 Sony Corp Semiconductor device and manufacturing method therefor
TWI484536B (en) 2011-06-30 2015-05-11 Toshiba Kk Template substrate and method for manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411651B2 (en) 2003-08-04 2008-08-12 Micronic Laser Systems Ab PSM alignment method and device
US8160351B2 (en) 2007-04-18 2012-04-17 Micronic Mydata AB Method and apparatus for mura detection and metrology

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