WO2014061674A1 - Process for producing permanent film for optical material, cured film produced thereby, and organic el display device and liquid-crystal display device each obtained using said cured film - Google Patents
Process for producing permanent film for optical material, cured film produced thereby, and organic el display device and liquid-crystal display device each obtained using said cured film Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
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- C—CHEMISTRY; METALLURGY
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
- C07C69/732—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids of unsaturated hydroxy carboxylic acids
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
Abstract
Description
以上の状況に鑑み本発明は、上記ハーフトーンマスクを利用した露光において改良された感光特性を発揮し、有機EL表示装置や液晶表示装置に適した層間絶縁膜(永久膜)を好適に形成することができる光学材料用永久膜の製造方法の提供を目的とする。 As this type of photosensitive resin composition, a positive type is adopted because of its high accuracy of exposure and curing. Therefore, there is little knowledge about the negative photosensitive resin, and it has been unknown how it behaves particularly with respect to exposure with a halftone mask.
In view of the above situation, the present invention exhibits improved photosensitivity in exposure using the halftone mask, and suitably forms an interlayer insulating film (permanent film) suitable for organic EL display devices and liquid crystal display devices. An object of the present invention is to provide a method for producing a permanent film for an optical material.
〔1〕感光性樹脂組成物を露光して露光部を硬化し、その後に非露光部を除去し、残された硬化膜を永久膜とする光学材料用永久膜の製造方法であって、
感光性樹脂組成物が、(A)重合性モノマーと、(B)光重合開始剤と、(C)アルカリ可溶性樹脂と、(D)溶剤とを含有し、
感光性樹脂組成物に、g線、h線、およびi線のうちから選ばれる活性放射線を、位相シフタ部における透過率0.1%以上20%以下のハーフトーン位相差マスクを介して照射し組成物を露光する光学材料用永久膜の製造方法。
〔2〕残された硬化膜を加熱して永久膜とする〔1〕に記載の光学材料用永久膜の製造方法。
〔3〕ハーフトーン位相差マスクは光透過性の透明基材に対して透過光の一部を遮光する位相シフタ部が設けられてなり、位相シフタ部には照射された光の位相を反転する性質が付与されている〔1〕または〔2〕に記載の光学材料用永久膜の製造方法。
〔4〕(C)アルカリ可溶性樹脂が架橋性基を有する構成単位を有する〔1〕~〔3〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔5〕活性放射線が、g線、h線、およびi線のうちから選ばれる複数を混合したものである〔1〕~〔4〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔6〕感光性樹脂組成物の露光量が30mJ/cm2以上1000mJ/cm2以下である〔1〕~〔5〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔7〕(C)アルカリ可溶性樹脂がカルボキシル基を有する構成単位を含有する〔1〕~〔6〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔8〕(A)重合性モノマーが、エチレン性不飽和二重結合を有する化合物である〔1〕~〔7〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔9〕重合性モノマーが下記式(A)で表される〔1〕~〔8〕のいずれか1項に記載の光学材料用永久膜の製造方法。
(式中、Lは2価以上の連結基を表す。Aは重合性官能基を表す。Raは置換基を表す。naは1~10の整数を表す。nbは0~9の整数を表す。na+nbは10以下である。)
〔10〕(A)重合性モノマーが、4つ以上の重合性官能基を有する化合物である〔1〕~〔9〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔11〕(C)アルカリ可溶性樹脂の架橋性基がエポキシ基、オキセタニル基、およびエチレン性不飽和基よりなる群から選ばれた少なくとも1つの基である〔2〕~〔10〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔12〕(D)溶剤が、沸点160℃以上の溶剤を全溶剤質量に対して5質量%以上含有する〔1〕~〔11〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔13〕残された硬化膜の加熱を150℃以上の温度で行う〔2〕~〔12〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔14〕非露光部の除去を、塩基性化合物を含む現像液で行う〔1〕~〔13〕のいずれか1項に記載の光学材料用永久膜の製造方法。
〔15〕〔1〕~〔14〕のいずれか1項に記載の製造方法により製造された硬化膜。
〔16〕層間絶縁膜である〔15〕に記載の硬化膜。
〔17〕下記式(A)で表される重合性モノマーを重合硬化させた〔15〕または〔16〕に記載の硬化膜。
(式中、Lは2価以上の連結基を表す。Aは重合性官能基を表す。Raは置換基を表す。naは1~10の整数を表す。nbは0~9の整数を表す。na+nbは10以下である。)
〔18〕アルカリ可溶性樹脂として、少なくとも、不飽和カルボン酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1種の単量体と、官能基含有不飽和化合物とを共重合してなる樹脂を用いる〔15〕~〔17〕のいずれか1項に記載の硬化膜。
〔19〕〔15〕~〔18〕のいずれか1項に記載の硬化膜を具備する有機EL表示装置。
〔20〕〔15〕~〔18〕のいずれか1項に記載の硬化膜を具備する液晶表示装置。 The above-described problems of the present invention are solved by the following means.
[1] A method for producing a permanent film for an optical material in which a photosensitive resin composition is exposed to cure an exposed part, and thereafter a non-exposed part is removed, and the remaining cured film is a permanent film,
The photosensitive resin composition contains (A) a polymerizable monomer, (B) a photopolymerization initiator, (C) an alkali-soluble resin, and (D) a solvent.
The photosensitive resin composition is irradiated with actinic radiation selected from g-line, h-line, and i-line through a halftone phase difference mask having a transmittance of 0.1% to 20% in the phase shifter portion. The manufacturing method of the permanent film for optical materials which exposes a composition.
[2] The method for producing a permanent film for an optical material according to [1], wherein the remaining cured film is heated to obtain a permanent film.
[3] The halftone phase difference mask is provided with a phase shifter portion that blocks a part of the transmitted light with respect to the light-transmitting transparent base material, and the phase shifter portion inverts the phase of the irradiated light. The method for producing a permanent film for an optical material according to [1] or [2], wherein the property is imparted.
[4] The method for producing a permanent film for an optical material according to any one of [1] to [3], wherein (C) the alkali-soluble resin has a structural unit having a crosslinkable group.
[5] The production of the permanent film for optical materials according to any one of [1] to [4], wherein the active radiation is a mixture of a plurality selected from g-line, h-line, and i-line Method.
[6] the production method of a permanent film for an optical material according to any one of at 1000 mJ / cm 2 or less exposure amount of 30 mJ / cm 2 or more of the photosensitive resin composition [1] to [5].
[7] The method for producing a permanent film for an optical material according to any one of [1] to [6], wherein (C) the alkali-soluble resin contains a structural unit having a carboxyl group.
[8] The method for producing a permanent film for an optical material according to any one of [1] to [7], wherein (A) the polymerizable monomer is a compound having an ethylenically unsaturated double bond.
[9] The method for producing a permanent film for an optical material according to any one of [1] to [8], wherein the polymerizable monomer is represented by the following formula (A).
(In the formula, L represents a divalent or higher linking group. A represents a polymerizable functional group. Ra represents a substituent. Na represents an integer of 1 to 10. nb represents an integer of 0 to 9.) Na + nb is 10 or less.)
[10] The method for producing a permanent film for optical materials according to any one of [1] to [9], wherein (A) the polymerizable monomer is a compound having four or more polymerizable functional groups.
[11] Any one of [2] to [10], wherein the crosslinkable group of the alkali-soluble resin (C) is at least one group selected from the group consisting of an epoxy group, an oxetanyl group, and an ethylenically unsaturated group. The manufacturing method of the permanent film for optical materials as described in a term.
[12] (D) Production of permanent film for optical material according to any one of [1] to [11], wherein the solvent contains 5% by mass or more of a solvent having a boiling point of 160 ° C. or higher with respect to the total mass of the solvent. Method.
[13] The method for producing a permanent film for an optical material according to any one of [2] to [12], wherein the remaining cured film is heated at a temperature of 150 ° C. or higher.
[14] The method for producing a permanent film for an optical material according to any one of [1] to [13], wherein the unexposed portion is removed with a developer containing a basic compound.
[15] A cured film produced by the production method according to any one of [1] to [14].
[16] The cured film according to [15], which is an interlayer insulating film.
[17] The cured film according to [15] or [16], wherein a polymerizable monomer represented by the following formula (A) is polymerized and cured.
(In the formula, L represents a divalent or higher linking group. A represents a polymerizable functional group. Ra represents a substituent. Na represents an integer of 1 to 10. nb represents an integer of 0 to 9.) Na + nb is 10 or less.)
[18] As an alkali-soluble resin, at least one monomer selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic anhydride and a functional group-containing unsaturated compound are copolymerized. The cured film according to any one of [15] to [17], wherein a resin is used.
[19] An organic EL display device comprising the cured film according to any one of [15] to [18].
[20] A liquid crystal display device comprising the cured film according to any one of [15] to [18].
本発明の上記及び他の特徴及び利点は、適宜添付の図面を参照して、下記の記載からより明らかになるであろう。 According to the method for producing a permanent film for an optical material of the present invention, improved photosensitivity is exhibited in exposure using the halftone mask, and the hole diameter accuracy, rectangularity, and film reduction are improved overall. Therefore, an interlayer insulating film (permanent film) suitable for an organic EL display device or a liquid crystal display device can be suitably formed.
The above and other features and advantages of the present invention will become more apparent from the following description, with reference where appropriate to the accompanying drawings.
図1は、アクティブマトリックス方式の液晶表示装置10の一例を膜式的に示す断面図である。このカラー液晶表示装置10は、背面にバックライトユニット2を有する液晶パネルであって、液晶パネルは、偏光フィルムが貼り付けられた2枚のガラス基板4,5の間に配置されたすべての画素に対応するTFT6の素子が配置されている。ガラス基板上に形成された各素子には、硬化膜(層間絶縁膜)7中に形成されたコンタクトホール(金属配線)12を通して、画素電極を形成するITO透明電極11が配線されている。ITO透明電極11の上には、液晶8の層とブラックマトリックス3を配置したRGBカラーフィルタ画素部1が設けられている。このような構成のデバイスにより、背面のバックライトユニット2から光L1を照射し、液晶8のOn/Offの切り替えにより必要な箇所で彩色された光L2を放射させ、カラー画像を表示させることができる。 First, the example of the display apparatus which can use the photosensitive resin composition of this invention suitably is demonstrated.
FIG. 1 is a cross-sectional view showing an example of an active matrix type liquid
平坦化膜24上には、ボトムエミッション型の有機EL素子が形成されている。すなわち、平坦化膜24上に、ITOからなる第一電極25が、コンタクトホール22を介して配線22に接続させて形成されている。第一電極25は、有機EL素子の陽極に相当する。第一電極25の周縁を覆う形状の絶縁膜28が形成されており、この絶縁膜28を設けることによって、第一電極25とこの後の工程で形成する第二電極との間のショートを防止することができる。
さらに、図2には図示していないが、所望のパターンマスクを介して、正孔輸送層、有機発光層、電子輸送層を順次蒸着して設け、次いで、基板上方の全面にAlから成る第二電極を形成し、封止用ガラス板と紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止し、各有機EL素子にこれを駆動するためのTFT21が接続されてなるアクティブマトリックス型の有機EL表示装置が得られる。 FIG. 2 is a cross-sectional view schematically showing an example of the organic
On the planarizing film 24, a bottom emission type organic EL element is formed. That is, a
Further, although not shown in FIG. 2, a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second layer made of Al is formed on the entire surface above the substrate. An active matrix organic material in which two electrodes are formed, sealed by bonding using a sealing glass plate and an ultraviolet curable epoxy resin, and a
ハーフトーン(HT)位相差マスクは、露光時のパターン周辺部への回折光を、逆位相の光によってキャンセルさせるマスクを言う。その詳細は、添付の図3ともにその原理を既に述べた。ハーフトーン(HT)位相差マスク30は、透明基材32上に、露光パターンの外周に特定の透過率の位相シフタ部(位相変更膜31)を設けたものが用いられる。これを利用した露光形態を模式的に図3に示した。同図からも分かるとおり、この露光形態によれば、波形の反転した光が互いに隣接して照射されるため、パターンのエッジ部分の光量差が大きくなり、露光解像度を向上させることができる。このような露光方式を採用した半導体加工方法は知られており、例えば、特開2010-8868、特開2007-241136に記載された手順や条件を参考にすることができる。なお、本発明に適用されるハーフトーン位相差マスクの形態は特に限定されず、例えば、位相シフタ層が透過率調整層もしくは透過率制御部と位相調整層もしくは位相反転部とに別れた積層型のマスクであってもよい。各変形例を図7に示した。
また、前記のとおり、ハーフトーン位相差マスクとは、透過部と位相シフタ部を有するマスクのことを指すが、本発明においては、透過部、位相シフタ部に加え、遮光部を有するマスクを用いる(以降、いずれも同様に「ハーフトーン位相差マスク」と記載する)。 [Halftone phase difference mask]
The halftone (HT) phase difference mask is a mask that cancels the diffracted light to the periphery of the pattern at the time of exposure with light having an opposite phase. The details of this have already been described with reference to FIG. As the halftone (HT)
Further, as described above, the halftone phase difference mask refers to a mask having a transmission part and a phase shifter part. In the present invention, a mask having a light shielding part in addition to the transmission part and the phase shifter part is used. (Hereafter, both are similarly referred to as “halftone phase difference mask”).
以下、本発明における感光性樹脂組成物について詳細に説明する。本発明の感光性樹脂組成物は、(A)重合性モノマー、(B)光重合開始剤、(C)アルカリ可溶性樹脂、(D)溶剤を含有する。 [Photosensitive resin composition]
Hereinafter, the photosensitive resin composition in the present invention will be described in detail. The photosensitive resin composition of the present invention contains (A) a polymerizable monomer, (B) a photopolymerization initiator, (C) an alkali-soluble resin, and (D) a solvent.
本発明に用いられる重合性モノマーはこの種の組成物に適用されるものを適宜選定して用いることができるが、なかでもエチレン性不飽和化合物を用いることが好ましい。
エチレン性不飽和化合物は、少なくとも一個のエチレン性不飽和二重結合を有する重合性化合物である。
なお、本明細書では、アクリロイル基とメタクリロイル基とを総称して、(メタ)アクリロイル基と記載し、また、アクリレートとメタクリレートとを総称して、(メタ)アクリレートと記載することがある。
エチレン性不飽和化合物の例としては、不飽和カルボン酸(例えば、アクリル酸、メタクリル酸、イタコン酸、クロトン酸、イソクロトン酸、マレイン酸など)や、そのエステル類、アミド類が挙げられ、好ましくは、不飽和カルボン酸と脂肪族多価アルコール化合物とのエステル、不飽和カルボン酸と脂肪族多価アミン化合物とのアミド類が用いられる。
例えば、特開2006-23696号公報の段落0011に記載の成分や、特開2006-64921号公報の段落0031~0047に記載の成分を挙げることができる。 (A) Polymerizable monomer Although the polymerizable monomer used for this invention can select and use what is applied to this kind of composition suitably, it is preferable to use an ethylenically unsaturated compound especially.
An ethylenically unsaturated compound is a polymerizable compound having at least one ethylenically unsaturated double bond.
In this specification, an acryloyl group and a methacryloyl group may be collectively referred to as a (meth) acryloyl group, and an acrylate and a methacrylate may be collectively referred to as a (meth) acrylate.
Examples of ethylenically unsaturated compounds include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), esters and amides thereof, preferably An ester of an unsaturated carboxylic acid and an aliphatic polyhydric alcohol compound and an amide of an unsaturated carboxylic acid and an aliphatic polyvalent amine compound are used.
For example, the components described in paragraph 0011 of JP-A-2006-23696 and the components described in paragraphs 0031 to 0047 of JP-A-2006-64921 can be exemplified.
その他の例としては、特開昭48-64183号公報、特公昭49-43191号公報、特公昭52-30490号公報の各公報に記載されているようなポリエステルアクリレート類、エポキシ樹脂と(メタ)アクリル酸とを反応させて得られるエポキシアクリレート類等の多官能のアクリレートやメタクリレートを挙げることができる。更に日本接着協会誌vol.20、No.7、300~308ページ(1984年)に光硬化性モノマー及びオリゴマーとして紹介されているものも使用することができる。 Also suitable are urethane addition polymerizable compounds produced by the addition reaction of isocyanate and hydroxyl group, as described in JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765. Urethane acrylates such as those described above, and urethanes having an ethylene oxide skeleton described in JP-B-58-49860, JP-B-56-17654, JP-B-62-39417, and JP-B-62-39418 Compounds are also suitable.
Other examples include polyester acrylates, epoxy resins and (meth) described in JP-A-48-64183, JP-B-49-43191 and JP-B-52-30490. Mention may be made of polyfunctional acrylates and methacrylates such as epoxy acrylates obtained by reacting with acrylic acid. Furthermore, Journal of Japan Adhesion Association vol. 20, no. 7, pages 300 to 308 (1984), which are introduced as photocurable monomers and oligomers, can also be used.
また、現像性の調整の観点から、カルボキシ基を含有する重合性化合物も好ましい。この場合、樹脂の(C)成分との架橋により、力学特性を向上させることができ、好ましい。
更に、基板との密着性、ラジカル重合開始剤との相溶性等の観点から、エチレンオキサイド(EO)変性体、ウレタン結合を含有することも好ましい。 The polymerizable monomer is preferably polyfunctional, more preferably trifunctional or more, and even more preferably tetrafunctional or more. There is no particular upper limit, but 10 or less is practical. Furthermore, it is also effective to adjust the mechanical properties by using together compounds having different functional numbers and / or different polymerizable groups (for example, acrylic acid ester, methacrylic acid ester, styrene compound, vinyl ether compound).
Moreover, the polymeric compound containing a carboxy group is also preferable from a viewpoint of adjustment of developability. In this case, the mechanical properties can be improved by crosslinking with the component (C) of the resin, which is preferable.
Furthermore, it is also preferable to contain an ethylene oxide (EO) modified body and a urethane bond from the viewpoints of adhesion to the substrate and compatibility with the radical polymerization initiator.
式中、Lは2価以上の連結基を表す。連結基としては特に限定されないが、アルキレン基(炭素数1~12が好ましく、1~6がより好ましく、1~3が特に好ましい)、カルボニル基、イミノ基、エーテル基(-O-)、チオエーテル基(-S-)、またはこれらの組合せが挙げられる。連結基の炭素数は特に限定されないが、2~24であることが好ましく、2~12であることがより好ましい。なかでも、上記炭素数の分岐アルキレン基であることが好ましい。 ・ L
In the formula, L represents a divalent or higher linking group. The linking group is not particularly limited, but is an alkylene group (preferably having 1 to 12 carbon atoms, more preferably 1 to 6 and particularly preferably 1 to 3), a carbonyl group, an imino group, an ether group (—O—), a thioether. A group (—S—) or a combination thereof. The number of carbon atoms of the linking group is not particularly limited, but is preferably 2 to 24, and more preferably 2 to 12. Among these, a branched alkylene group having the above carbon number is preferable.
Aは重合性官能基を表す。重合性官能基としてはビニル基もしくはビニル基含有基であることが好ましい。ビニル基含有基としては、アクリロイル基、メタクリロイル基、アクリロイルオキシ基、メタクリロイルオキシ基、ビニルフェニル基などが挙げられる。 ・ A
A represents a polymerizable functional group. The polymerizable functional group is preferably a vinyl group or a vinyl group-containing group. Examples of the vinyl group-containing group include an acryloyl group, a methacryloyl group, an acryloyloxy group, a methacryloyloxy group, and a vinylphenyl group.
Raは置換基を表す。置換基としては特に限定されないが、アルキル基(好ましくは炭素数1~21)、アルケニル基(好ましくは炭素数2~12)、アリール基(好ましくは炭素数6~24)などが挙げられる。これらの置換基はさらに置換基を有していてもよく、有していてもよい置換基としては、ヒドロキシ基、アルコキシ基(好ましくは炭素数1~6)、カルボキシル基、アシル基(好ましくは炭素数1~6)などが挙げられる。 ・ Ra
Ra represents a substituent. The substituent is not particularly limited, and examples thereof include an alkyl group (preferably having 1 to 21 carbon atoms), an alkenyl group (preferably having 2 to 12 carbon atoms), an aryl group (preferably having 6 to 24 carbon atoms), and the like. These substituents may further have a substituent, and examples of the substituent that may be included include a hydroxy group, an alkoxy group (preferably having 1 to 6 carbon atoms), a carboxyl group, and an acyl group (preferably Examples thereof include
naは1~10の整数を表し、好ましくは3~8である。nbは0~9の整数を表し、好ましくは2~7である。na+nbは10以下であり、好ましくは2~8である。na、nbが2以上であるとき、そこで規定される複数の構造部位は互いに異なっていてもよい。
本明細書において、化合物の置換基や連結基の選択肢を始め、温度、厚さといった各技術事項は、そのリストがそれぞれ独立に記載されていても、相互に組み合わせることができる。 ・ Na, nb
na represents an integer of 1 to 10, preferably 3 to 8. nb represents an integer of 0 to 9, preferably 2 to 7. na + nb is 10 or less, preferably 2 to 8. When na and nb are 2 or more, the plurality of structural sites defined therein may be different from each other.
In the present specification, the technical matters such as temperature and thickness, as well as the choices of substituents and linking groups of the compounds, can be combined with each other even if the list is described independently.
上記ラジカル重合性モノマーの具体例としては、特開2007-269779号公報の段落番号0248~段落番号0251に記載されている化合物を本実施形態においても好適に用いることができる。 In the formula, n is an integer, each preferably 0 to 14, more preferably 0 to 5, and particularly preferably 1 to 3. Each m is 1 to 8, more preferably 1 to 5, and particularly preferably 1 to 3. A plurality of R, T and Z present in one molecule may be the same or different. When T is an oxyalkylene group, the terminal on the carbon atom side is bonded to R. At least two of R are preferably polymerizable groups, and more preferably three are polymerizable groups. Z 3 is preferably an alkylene group having 1 to 12 carbon atoms, and more preferably an alkylene group having 1 to 6 carbon atoms. Of these, a 2,2-propanediyl group is particularly preferable.
As specific examples of the radical polymerizable monomer, compounds described in paragraph Nos. 0248 to 0251 of JP-A No. 2007-2699779 can be suitably used in this embodiment.
yは、それぞれ、1~10の整数を表し、1~5の整数が好ましく、1~3がより好ましい。
Xは、それぞれ、水素原子、アクリロイル基、メタクリロイル基、または、カルボキシル基を表す。
式(i)中、アクリロイル基およびメタクリロイル基の合計は3個または4個であることが好ましく、4個がより好ましい。
mは、それぞれ、0~10の整数を表し、1~5が好ましい。それぞれのmの合計は1~40の整数であり、4~20個が好ましい。
式(ii)中、アクリロイル基およびメタクリロイル基の合計は5個または6個であることが好ましく、6個がより好ましい。
nは、それぞれ、0~10の整数を表し、1~5が好ましい。それぞれnの合計は1~60の整数であり、4~30個が好ましい。 In the above formulae, E represents — ((CH 2 ) y CH 2 O) — or — ((CH 2 ) y CH (CH 3 ) O) —, and — ((CH 2 ) y CH 2 O)-is preferred.
Each y represents an integer of 1 to 10, preferably an integer of 1 to 5, and more preferably 1 to 3.
X represents a hydrogen atom, an acryloyl group, a methacryloyl group, or a carboxyl group, respectively.
In the formula (i), the total number of acryloyl groups and methacryloyl groups is preferably 3 or 4, more preferably 4.
Each m represents an integer of 0 to 10, and preferably 1 to 5. The total of each m is an integer of 1 to 40, preferably 4 to 20.
In formula (ii), the total number of acryloyl groups and methacryloyl groups is preferably 5 or 6, and more preferably 6.
n represents an integer of 0 to 10, respectively, and preferably 1 to 5. The total of n is an integer of 1 to 60, preferably 4 to 30.
酸基を有する多官能モノマーの好ましい酸価としては、0.1~40mgKOH/gであり、特に好ましくは5~30mgKOH/gである。 The monomer having an acid group is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and an unreacted hydroxyl group of the aliphatic polyhydroxy compound is reacted with a non-aromatic carboxylic acid anhydride to form an acid group. The polyfunctional monomer provided is preferred, and particularly preferably in this ester, the aliphatic polyhydroxy compound is pentaerythritol and / or dipentaerythritol. Examples of commercially available products include Aronix series M-305, M-510, and M-520 as polybasic acid-modified acrylic oligomers manufactured by Toagosei Co., Ltd.
A preferable acid value of the polyfunctional monomer having an acid group is 0.1 to 40 mgKOH / g, and particularly preferably 5 to 30 mgKOH / g.
後記(C)アルカリ可溶性樹脂との関係においては、成分A(重合性モノマー)の成分C(アルカリ可溶性樹脂)に対する質量比率[(A)/(C)比]が0.2~2.0であることが好ましく、0.3~2.0であることがより好ましく、0.6~1.5であることが特に好ましい。成分Cの含有量や(A)/(C)比が前記範囲内であると、良好な現像性、力学強度を有するスペーサーや保護膜が得られる。 The content of the polymerizable monomer is preferably 5% by mass or more, more preferably 10% by mass or more, and more preferably 15% by mass or more in the total solid content of the photosensitive resin composition of the present invention. Is more preferable. As an upper limit, it is preferable that it is 60 mass% or less, It is more preferable that it is 50 mass% or less, It is still more preferable that it is 45 mass% or less.
In the relationship with the alkali-soluble resin (C) described later, the mass ratio [(A) / (C) ratio] of component A (polymerizable monomer) to component C (alkali-soluble resin) is 0.2 to 2.0. It is preferably from 0.3 to 2.0, more preferably from 0.6 to 1.5. When the content of component C and the ratio (A) / (C) are within the above ranges, a spacer or protective film having good developability and mechanical strength can be obtained.
本発明に用いることができる光重合開始剤としては、露光光により感光し、前記(成分C)エチレン性不飽和化合物の重合を開始、促進する化合物であることが好ましい。
本発明でいう「放射線」とは、その照射により成分Bより開始種を発生させることができるエネルギーを付与することができる活性エネルギー線であれば、特に制限はなく、広くα線、γ線、X線、紫外線(UV)、可視光線、電子線などを包含するものである。
光重合開始剤として、好ましくは波長300nm以上、より好ましくは波長300~450nmの活性光線に感応し、前記(成分A)重合性モノマーの重合を開始、促進する化合物である。また、波長300nm以上の活性光線に直接感応しない光重合開始剤についても、増感剤と併用することによって波長300nm以上の活性光線に感応する化合物であれば、増感剤と組み合わせて好ましく用いることができる。 (B) Photopolymerization initiator The photopolymerization initiator that can be used in the present invention is preferably a compound that is sensitized by exposure light and initiates and accelerates the polymerization of the (component C) ethylenically unsaturated compound. .
The “radiation” as used in the present invention is not particularly limited as long as it is an active energy ray capable of imparting energy capable of generating a starting species from the component B by irradiation, and is broadly α-ray, γ-ray, X-rays, ultraviolet rays (UV), visible rays, electron beams and the like are included.
The photopolymerization initiator is preferably a compound that responds to actinic rays having a wavelength of 300 nm or more, more preferably, a wavelength of 300 to 450 nm, and initiates and accelerates the polymerization of the (Component A) polymerizable monomer. In addition, a photopolymerization initiator that is not directly sensitive to an actinic ray having a wavelength of 300 nm or more is preferably used in combination with a sensitizer as long as it is a compound that is sensitive to an actinic ray having a wavelength of 300 nm or more when used in combination with a sensitizer. Can do.
オキシムエステル化合物は、下記式(1)又は式(2)で表される化合物であることが好ましい。 Examples of the oxime ester compound include compounds described in JP-A No. 200-80068, JP-A No. 2001-233842, JP-T No. 2004-534797, JP-A No. 2007-231000, and JP-A No. 2009-134289. Can be used.
The oxime ester compound is preferably a compound represented by the following formula (1) or formula (2).
Arは、芳香族基(炭素数6~22が好ましく、6~14がより好ましい)又はヘテロ芳香族基(炭素数1~15が好ましく、3~12がより好ましい)を表し、ベンゼン環、ナフタレン環又はカルバゾール環から水素原子を1つ除いた基であることが好ましく、R2と共に環を形成したナフタレニル基、カルバゾイル基がより好ましい。 ・ Ar
Ar represents an aromatic group (preferably having 6 to 22 carbon atoms, more preferably 6 to 14 carbon atoms) or a heteroaromatic group (preferably having 1 to 15 carbon atoms, more preferably 3 to 12 carbon atoms), and represents a benzene ring or naphthalene. A group obtained by removing one hydrogen atom from a ring or a carbazole ring is preferable, and a naphthalenyl group and a carbazoyl group that form a ring together with R 2 are more preferable.
R1は、アルキル基(炭素数1~12が好ましく、1~6がより好ましく、1~3が特に好ましい)、芳香族基(炭素数6~22が好ましく、6~14がより好ましい)又はアルキルオキシ基(炭素数1~12が好ましく、1~6がより好ましく、1~3が特に好ましい)を表し、メチル基、エチル基、ベンジル基、フェニル基、ナフチル基、メトキシ基又はエトキシ基が好ましく、メチル基、エチル基、フェニル基又はメトキシ基がより好ましい。 ・ R 1
R 1 is an alkyl group (preferably having 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, particularly preferably 1 to 3 carbon atoms), an aromatic group (preferably having 6 to 22 carbon atoms, more preferably 6 to 14 carbon atoms) or Represents an alkyloxy group (preferably having 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and particularly preferably 1 to 3 carbon atoms), and a methyl group, an ethyl group, a benzyl group, a phenyl group, a naphthyl group, a methoxy group or an ethoxy group A methyl group, an ethyl group, a phenyl group, or a methoxy group is more preferable.
R2は、水素原子又はアルキル基(炭素数1~12が好ましく、1~6がより好ましく、1~3が特に好ましい)を表す。更にR2はAr基と結合し環を形成してもよい。R2は、水素原子又は置換アルキル基(置換基を含まずに炭素数1~12が好ましく、1~6がより好ましく、1~3が特に好ましい)が好ましく、水素原子、Arと共に環を形成する置換アルキル基又はトルエンチオアルキル基がより好ましい。当該置換基の例として前記Arを含む基等が挙げられる。 ・ R 2
R 2 represents a hydrogen atom or an alkyl group (preferably having 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and particularly preferably 1 to 3 carbon atoms). Furthermore, R 2 may be bonded to an Ar group to form a ring. R 2 is preferably a hydrogen atom or a substituted alkyl group (having no substituent, preferably having 1 to 12 carbon atoms, more preferably 1 to 6 and particularly preferably 1 to 3), and forming a ring together with the hydrogen atom and Ar A substituted alkyl group or a toluenethioalkyl group is more preferable. Examples of the substituent include a group containing Ar.
本発明の感光性樹脂組成物における光重合開始剤の総量は、感光性樹脂組成物中の全固形分100重量部に対して、0.5重量部以上であることが好ましく、2重量部以上であることがより好ましい。上限としては、30重量部以下であることが好ましく、20重量部以下であることがより好ましい。 A photoinitiator can be used 1 type or in combination of 2 or more types. Further, when using an initiator that does not absorb at the exposure wavelength, it is necessary to use a sensitizer.
The total amount of the photopolymerization initiator in the photosensitive resin composition of the present invention is preferably 0.5 parts by weight or more with respect to 100 parts by weight of the total solid content in the photosensitive resin composition, and 2 parts by weight or more. It is more preferable that As an upper limit, it is preferable that it is 30 parts weight or less, and it is more preferable that it is 20 parts weight or less.
本発明で用いる(C)アルカリ可溶性樹脂は、カルボキシル基を有することが好ましい。より具体的には、(C1)不飽和カルボン酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1種の単量体(以下、「(C1)化合物」と称することがある)と、(C2)官能基含有不飽和化合物(以下、「(C2)化合物」と称することがある)とを共重合してなるアルカリ可溶性樹脂であることが好ましい。前記官能基としては環状官能基(C2-1)とエチレン性不飽和基(C2-2)が挙げられる。環状官能基としては、エポキシ基、オキセタニル基が挙げられる。エチレン性不飽和基としてはビニル基もしくはビニル基含有基が挙げられ、なかでも、アクリロイル基、メタクリロイル基、アクリロイルオキシ基、メタクリロイルオキシ基が好ましい。 (C) Alkali-soluble resin The (C) alkali-soluble resin used in the present invention preferably has a carboxyl group. More specifically, (C1) at least one monomer selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride (hereinafter sometimes referred to as “(C1) compound”) (C2) An alkali-soluble resin obtained by copolymerizing a functional group-containing unsaturated compound (hereinafter sometimes referred to as “(C2) compound”) is preferable. Examples of the functional group include a cyclic functional group (C2-1) and an ethylenically unsaturated group (C2-2). Examples of the cyclic functional group include an epoxy group and an oxetanyl group. Examples of the ethylenically unsaturated group include a vinyl group or a vinyl group-containing group, and among them, an acryloyl group, a methacryloyl group, an acryloyloxy group, and a methacryloyloxy group are preferable.
アルカリ可溶性樹脂は、本発明の感光性樹脂組成物の溶剤を除く成分の主成分となるものであることが好ましい。固形分中に占めるアルカリ可溶性樹脂の割合として好ましい範囲は、30質量%以上であり、さらに好ましくは40質量%以上であり、特に好ましくは50質量%以上である。上限としては、80質量%以下が好ましく、75質量%以下がより好ましく、70質量%以下がさらに好ましい。上記の範囲よりも割合が少ない場合、アルカリ現像液に対する溶解性が低下し、求めるパターンを形成しえない。一方、上記の範囲よりも割合が多い場合、過剰な溶解性のため膜減りが顕著となるだけでなく、重合性モノマーによる硬化が十分に達成されないため、光学材料用永久膜として十分な物理的強度を保持しえない。 (C) The alkali-soluble resin is obtained by copolymerizing, for example, a compound (C1) giving a carboxyl group-containing structural unit and a compound (C2) giving an epoxy group-containing structural unit in the presence of a polymerization initiator in a solvent. Can be manufactured. In the production of the (C) alkali-soluble resin, the structural unit other than the structural unit derived from the (C3) compound (the above (C1) and (C2) is combined with the (C1) compound and (C2) compound. The unsaturated compound provided) can be further added to form a copolymer.
The alkali-soluble resin is preferably the main component of the components excluding the solvent of the photosensitive resin composition of the present invention. A preferred range for the proportion of the alkali-soluble resin in the solid content is 30% by mass or more, more preferably 40% by mass or more, and particularly preferably 50% by mass or more. As an upper limit, 80 mass% or less is preferable, 75 mass% or less is more preferable, and 70 mass% or less is further more preferable. When the ratio is less than the above range, the solubility in an alkaline developer is lowered and the desired pattern cannot be formed. On the other hand, when the ratio is larger than the above range, not only the film reduction becomes remarkable due to the excessive solubility, but also the curing by the polymerizable monomer is not sufficiently achieved, so that it is sufficient as a permanent film for an optical material. Cannot keep strength.
(C1)化合物としては、不飽和モノカルボン酸、不飽和ジカルボン酸、不飽和ジカルボン酸の無水物、多価カルボン酸のモノ〔(メタ)アクリロイルオキシアルキル〕エステル、両末端にカルボキシル基と水酸基とを有するポリマーのモノ(メタ)アクリレート、カルボキシル基を有する不飽和多環式化合物及びその無水物等が挙げられる。 -(C1) Compound (C1) As the compound, unsaturated monocarboxylic acid, unsaturated dicarboxylic acid, anhydride of unsaturated dicarboxylic acid, mono [(meth) acryloyloxyalkyl] ester of polyvalent carboxylic acid, Examples thereof include mono (meth) acrylates of polymers having a carboxyl group and a hydroxyl group, unsaturated polycyclic compounds having a carboxyl group, and anhydrides thereof.
不飽和ジカルボン酸としては、例えばマレイン酸、フマル酸、シトラコン酸、メサコン酸、イタコン酸等;不飽和ジカルボン酸の無水物としては、例えば上記ジカルボン酸として例示した化合物の無水物等;多価カルボン酸のモノ〔(メタ)アクリロイルオキシアルキル〕エステルとしては、例えばコハク酸モノ〔2-(メタ)アクリロイルオキシエチル〕、フタル酸モノ〔2-(メタ)アクリロイルオキシエチル〕等;両末端にカルボキシル基と水酸基とを有するポリマーのモノ(メタ)アクリレートとしては、例えばω-カルボキシポリカプロラクトンモノ(メタ)アクリレート等;カルボキシル基を有する不飽和多環式化合物及びその無水物としては、例えば5-カルボキシビシクロ[2.2.1]ヘプト-2-エン、5,6-ジカルボキシビシクロ[2.2.1]ヘプト-2-エン、5-カルボキシ-5-メチルビシクロ[2.2.1]ヘプト-2-エン、5-カルボキシ-5-エチルビシクロ[2.2.1]ヘプト-2-エン、5-カルボキシ-6-メチルビシクロ[2.2.1]ヘプト-2-エン、5-カルボキシ-6-エチルビシクロ[2.2.1]ヘプト-2-エン、5,6-ジカルボキシビシクロ[2.2.1]ヘプト-2-エン無水物等が挙げられる。 Examples of unsaturated monocarboxylic acids include acrylic acid, methacrylic acid, crotonic acid and the like;
Examples of the unsaturated dicarboxylic acid include maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, etc .; examples of the unsaturated dicarboxylic acid anhydride include, for example, anhydrides of the compounds exemplified as the above dicarboxylic acid; Examples of acid mono [(meth) acryloyloxyalkyl] esters include succinic acid mono [2- (meth) acryloyloxyethyl], phthalic acid mono [2- (meth) acryloyloxyethyl] and the like; Examples of mono (meth) acrylates of polymers having a hydroxyl group and a hydroxyl group include ω-carboxypolycaprolactone mono (meth) acrylates; unsaturated polycyclic compounds having a carboxyl group and anhydrides thereof include, for example, 5-carboxybicyclo [2.2.1] Hept-2-ene, 5,6-dicar Xibicyclo [2.2.1] hept-2-ene, 5-carboxy-5-methylbicyclo [2.2.1] hept-2-ene, 5-carboxy-5-ethylbicyclo [2.2.1] Hept-2-ene, 5-carboxy-6-methylbicyclo [2.2.1] hept-2-ene, 5-carboxy-6-ethylbicyclo [2.2.1] hept-2-ene, 5, And 6-dicarboxybicyclo [2.2.1] hept-2-ene anhydride.
(C)成分は、架橋性基を有する構成単位(C2)を有する。上記架橋性基は、加熱処理で硬化反応を起こす基であれば特に限定はされない。好ましい架橋性基を有する構成単位の態様としては、エポキシ基、オキセタニル基、およびエチレン性不飽和基よりなる群から選ばれた少なくとも1つを含む構成単位が挙げられ、エポキシ基、オキセタニル基、および、から選ばれる少なくとも1種であることが好ましい。その中でも、本発明の感光性樹脂組成物は、上記(C)成分が、エポキシ基およびオキセタニル基のうち少なくとも1つを含む構成単位を含むことが好ましい。より詳細には、以下のものが挙げられる。 -(C2) Structural Unit Having a Crosslinkable Group The component (C) has a structural unit (C2) having a crosslinkable group. The crosslinkable group is not particularly limited as long as it is a group that causes a curing reaction by heat treatment. Preferred embodiments of the structural unit having a crosslinkable group include a structural unit containing at least one selected from the group consisting of an epoxy group, an oxetanyl group, and an ethylenically unsaturated group, an epoxy group, an oxetanyl group, and It is preferable that it is at least 1 sort (s) chosen from these. Among them, in the photosensitive resin composition of the present invention, the component (C) preferably includes a structural unit containing at least one of an epoxy group and an oxetanyl group. In more detail, the following are mentioned.
上記エポキシ基および/またはオキセタニル基を有する構成単位(C2-1)は、1つの構成単位中にエポキシ基またはオキセタニル基を少なくとも1つ有していればよく、1つ以上のエポキシ基および1つ以上オキセタニル基、2つ以上のエポキシ基、または、2つ以上のオキセタニル基を有していてもよく、特に限定されないが、エポキシ基および/またはオキセタニル基を合計1~3つ有することが好ましく、エポキシ基および/またはオキセタニル基を合計1または2つ有することがより好ましく、エポキシ基またはオキセタニル基を1つ有することがさらに好ましい。 The polymer (C) preferably contains a structural unit (structural unit (C2-1)) having an epoxy group and / or an oxetanyl group. The 3-membered cyclic ether group is also called an epoxy group, and the 4-membered cyclic ether group is also called an oxetanyl group.
The structural unit (C2-1) having an epoxy group and / or oxetanyl group may have at least one epoxy group or oxetanyl group in one structural unit. It may have an oxetanyl group, two or more epoxy groups, or two or more oxetanyl groups, and is not particularly limited, but preferably has a total of 1 to 3 epoxy groups and / or oxetanyl groups, It is more preferable to have one or two epoxy groups and / or oxetanyl groups in total, and it is even more preferable to have one epoxy group or oxetanyl group.
オキセタニル基を有する構成単位を形成するために用いられるラジカル重合性単量体の具体例としては、例えば、特開2001-330953号公報の段落番号0011~0016に記載のオキセタニル基を有する(メタ)アクリル酸エステルなどが挙げられ、これらの内容は本願明細書に組み込まれる。
上記エポキシ基および/またはオキセタニル基を有する構成単位(C2-1)を形成するために用いられるラジカル重合性単量体の具体例としては、メタクリル酸エステル構造を含有するモノマー、アクリル酸エステル構造を含有するモノマーであることが好ましい。 Specific examples of the radical polymerizable monomer used for forming the structural unit having an epoxy group include, for example, glycidyl acrylate, glycidyl methacrylate, glycidyl α-ethyl acrylate, and glycidyl α-n-propyl acrylate. Glycidyl α-n-butyl acrylate, 3,4-epoxybutyl acrylate, 3,4-epoxybutyl methacrylate, 3,4-epoxycyclohexylmethyl acrylate, 3,4-epoxycyclohexyl methacrylate Methyl, α-ethylacrylic acid-3,4-epoxycyclohexylmethyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, described in paragraph Nos. 0031 to 0035 of Japanese Patent No. 4168443 Alicyclic And compounds containing epoxy backbone can be cited, the contents of which are hereby incorporated herein.
Specific examples of the radical polymerizable monomer used for forming the structural unit having an oxetanyl group include (meth) having an oxetanyl group described in paragraph Nos. 0011 to 0016 of JP-A No. 2001-330953, for example. Acrylic acid esters and the like are mentioned, the contents of which are incorporated herein.
Specific examples of the radical polymerizable monomer used for forming the structural unit (C2-1) having the epoxy group and / or oxetanyl group include a monomer having a methacrylate structure and an acrylic ester structure. It is preferable that it is a monomer to contain.
上記架橋性基を有する構成単位(C2)の1つとして、エチレン性不飽和基を有する構成単位(C2-2)が挙げられる(以下、「構成単位(C2-2)」ともいう。)。上記エチレン性不飽和基を有する構成単位(C2-2)としては、側鎖にエチレン性不飽和基を有する構成単位が好ましく、末端にエチレン性不飽和基を有し、炭素数3~16の側鎖を有する構成単位がより好ましく、下記式(C2-2-1)で表される側鎖を有する構成単位がさらに好ましい。 (C2-2) Structural unit having an ethylenically unsaturated group As one of the structural units (C2) having a crosslinkable group, there may be mentioned a structural unit (C2-2) having an ethylenically unsaturated group (hereinafter referred to as “the structural unit (C2-2)”) , Also referred to as “structural unit (C2-2)”. The structural unit (C2-2) having an ethylenically unsaturated group is preferably a structural unit having an ethylenically unsaturated group in the side chain, having an ethylenically unsaturated group at the terminal, and having 3 to 16 carbon atoms. A structural unit having a side chain is more preferable, and a structural unit having a side chain represented by the following formula (C2-2-1) is more preferable.
上記構成単位(C2)を含有する重合体が、上記構成単位(C1)を含有する場合、構成単位(C2)は、該構成単位(C1)と構成単位(C2)を含有する重合体中、薬品耐性の観点から3~70質量%が好ましく、10~60質量%がより好ましい。
本発明では、さらに、いずれの態様にかかわらず、(C)成分の全構成単位中、構成単位(C2)を3~70質量%含有することが好ましく、10~60質量%含有することがより好ましい。 When the polymer containing the structural unit (C2) does not substantially contain the structural unit (C1), the structural unit (C2) is 5 to 90% in the polymer containing the structural unit (C2). % By mass is preferable, and 20 to 80% by mass is more preferable.
When the polymer containing the structural unit (C2) contains the structural unit (C1), the structural unit (C2) is a polymer containing the structural unit (C1) and the structural unit (C2). From the viewpoint of chemical resistance, it is preferably 3 to 70% by mass, more preferably 10 to 60% by mass.
In the present invention, the structural unit (C2) is preferably contained in an amount of 3 to 70% by mass, more preferably 10 to 60% by mass, in all the structural units of the component (C) regardless of any embodiment. preferable.
(C3)化合物は、上記の(C1)化合物、(C2)化合物以外の不飽和化合物であれば特に制限されるものではない。(C3)化合物としては、例えばメタクリル酸鎖状アルキルエステル、メタクリル酸環状アルキルエステル、アクリル酸鎖状アルキルエステル、アクリル酸環状アルキルエステル、メタクリル酸アリールエステル、アクリル酸アリールエステル、不飽和ジカルボン酸ジエステル、ビシクロ不飽和化合物、マレイミド化合物、不飽和芳香族化合物、テトラヒドロフラン骨格、フラン骨格、テトラヒドロピラン骨格、ピラン骨格及びその他の不飽和化合物等が挙げられる。 [(C3) Compound]
The (C3) compound is not particularly limited as long as it is an unsaturated compound other than the above (C1) compound and (C2) compound. Examples of the (C3) compound include methacrylic acid chain alkyl ester, methacrylic acid cyclic alkyl ester, acrylic acid chain alkyl ester, acrylic acid cyclic alkyl ester, methacrylic acid aryl ester, acrylic acid aryl ester, unsaturated dicarboxylic acid diester, Bicyclo unsaturated compound, maleimide compound, unsaturated aromatic compound, tetrahydrofuran skeleton, furan skeleton, tetrahydropyran skeleton, pyran skeleton and other unsaturated compounds.
本発明の感光性樹脂組成物は、(D)溶剤を含有する。本発明の感光性樹脂組成物は、本発明の各成分を(D)溶剤に溶解した溶液として調製されることが好ましい。
本発明の感光性樹脂組成物に使用される(D)溶剤としては、公知の溶剤を用いることができ、エチレングリコールモノアルキルエーテル類、エチレングリコールジアルキルエーテル類、エチレングリコールモノアルキルエーテルアセテート類、プロピレングリコールモノアルキルエーテル類、プロピレングリコールジアルキルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、ジエチレングリコールジアルキルエーテル類、ジエチレングリコールモノアルキルエーテルアセテート類、ジプロピレングリコールモノアルキルエーテル類、ジプロピレングリコールジアルキルエーテル類、ジプロピレングリコールモノアルキルエーテルアセテート類、エステル類、ケトン類、アミド類、ラクトン類等が例示できる。また、本発明の感光性樹脂組成物に使用される(D)溶剤の具体例としては特開2011-221494号公報の段落番号0174~0178に記載の溶剤も挙げられ、これらの内容は本願明細書に組み込まれる。 <(D) Solvent>
The photosensitive resin composition of the present invention contains (D) a solvent. The photosensitive resin composition of the present invention is preferably prepared as a solution in which the components of the present invention are dissolved in the solvent (D).
As the solvent (D) used in the photosensitive resin composition of the present invention, known solvents can be used, such as ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene. Glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers, diethylene glycol monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, dipropylene glycol Examples include monoalkyl ether acetates, esters, ketones, amides, lactones and the like. In addition, specific examples of the (D) solvent used in the photosensitive resin composition of the present invention include the solvents described in paragraph numbers 0174 to 0178 of JP2011-221494A, and the contents thereof are described in the present specification. Embedded in the book.
沸点130℃以上160℃未満の溶剤としては、プロピレングリコールモノメチルエーテルアセテート(沸点146℃)、プロピレングリコールモノエチルエーテルアセテート(沸点158℃)、プロピレングリコールメチル-n-ブチルエーテル(沸点155℃)、プロピレングリコールメチル-n-プロピルエーテル(沸点131℃)が例示できる。
沸点160℃以上の溶剤としては、3-エトキシプロピオン酸エチル(沸点170℃)、ジエチレングリコールメチルエチルエーテル(沸点176℃)、プロピレングリコールモノメチルエーテルプロピオネート(沸点160℃)、ジプロピレングリコールメチルエーテルアセテート(沸点213℃)、3-メトキシブチルエーテルアセテート(沸点171℃)、ジエチレングリコールジエチエルエーテル(沸点189℃)、ジエチレングリコールジメチルエーテル(沸点162℃)、プロピレングリコールジアセテート(沸点190℃)、ジエチレングリコールモノエチルエーテルアセテート(沸点220℃)、ジプロピレングリコールジメチルエーテル(沸点175℃)、1,3-ブチレングリコールジアセテート(沸点232℃)が例示できる。 Component D is preferably a solvent having a boiling point of 130 ° C. or higher and lower than 160 ° C., a solvent having a boiling point of 160 ° C. or higher, or a mixture thereof.
Solvents having a boiling point of 130 ° C. or higher and lower than 160 ° C. include propylene glycol monomethyl ether acetate (boiling point 146 ° C.), propylene glycol monoethyl ether acetate (boiling point 158 ° C.), propylene glycol methyl-n-butyl ether (boiling point 155 ° C.), propylene glycol An example is methyl-n-propyl ether (boiling point 131 ° C.).
Solvents having a boiling point of 160 ° C or higher include ethyl 3-ethoxypropionate (boiling point 170 ° C), diethylene glycol methyl ethyl ether (boiling point 176 ° C), propylene glycol monomethyl ether propionate (boiling point 160 ° C), dipropylene glycol methyl ether acetate. (Boiling point 213 ° C), 3-methoxybutyl ether acetate (boiling point 171 ° C), diethylene glycol diethyl ether (boiling point 189 ° C), diethylene glycol dimethyl ether (boiling point 162 ° C), propylene glycol diacetate (boiling point 190 ° C), diethylene glycol monoethyl ether acetate (Boiling point 220 ° C), dipropylene glycol dimethyl ether (boiling point 175 ° C), 1,3-butylene glycol diacetate (boiling point 232 ° C) It can be.
このように、160℃を界に、異なる沸点の溶媒を所定量で組み合わせて用いることにより、基板への濡れ性を向上させることができ、種々の基板への塗布を可能とすることができ好ましい。 The content of the solvent (D) in the photosensitive resin composition of the present invention is preferably 50 parts by mass or more and 100 parts by mass or more per 100 parts by mass of all resin components in the photosensitive resin composition. Is more preferable. As an upper limit, 95 mass parts or less are preferable, and it is still more preferable that it is 90 mass parts or less. In particular, in the present invention, the solvent having a boiling point of 160 ° C. or higher is preferably contained in an amount of 5% by mass or more, more preferably 10% by mass or more based on the total solvent mass. As an upper limit, it is preferable to contain 50 mass% or less with respect to the total solvent mass, and it is more preferable to contain 30 mass% or less.
Thus, it is possible to improve the wettability to the substrate by using a combination of solvents having different boiling points in a predetermined amount at a temperature of 160 ° C., which can be applied to various substrates. .
露光に際し位相シフタ部を採用した効果により周辺部の明暗がシャープになり、これは架橋性基を有する樹脂組成物においてより大きく良化すると解される。その効果により、露光により硬化した周辺部のレジスト形状がより切り立った断面矩形に近いものとなる。これにより、ホール径や矩形性が良化する方向となる。さらに、本発明においては、ネガ型の感光性樹脂組成物に特有の効果として硬化部の周辺部における矩形性の良化が、引き続くポストベーク処理においても良好に作用することが考えられる。すなわち、本発明においては、上記製品品質の良化が製造品質の良化をも引き出し、両者が相俟って、露光部が溶出されるポジ型では得がたい改善効果が発現されるものと考えられる。 According to the present invention, not only the improvement of the photosensitive properties such as the hole diameter and the rectangularity but also the cured film is adopted by combining the above resin composition and combining the exposure with a halftone retardation mask. It is possible to reduce film loss. The reason why such an excellent effect is exhibited is not clear, and in particular, the reduction in film thickness cannot be explained only by the blending of the resin. The action mechanism is estimated as follows in relation to the exposure condition.
It is understood that the brightness of the peripheral portion becomes sharp due to the effect of adopting the phase shifter portion in the exposure, which is greatly improved in the resin composition having a crosslinkable group. Due to this effect, the resist shape of the peripheral portion cured by exposure becomes closer to a more rectangular sectional shape. As a result, the hole diameter and rectangularity are improved. Furthermore, in the present invention, as an effect peculiar to the negative photosensitive resin composition, it is conceivable that the improvement in rectangularity at the periphery of the cured portion works well in the subsequent post-baking treatment. In other words, in the present invention, the improvement in product quality leads to the improvement in manufacturing quality, and it is considered that the improvement effect that cannot be obtained in the positive type in which the exposed portion is eluted together is expressed. .
本発明の感光性樹脂組成物には、上記の成分に加えて、必要に応じて、増感剤、架橋剤、密着改良剤、塩基性化合物、界面活性剤等を好ましく加えることができる。さらには、可塑剤、熱ラジカル発生剤、酸化防止剤、熱酸発生剤、紫外線吸収剤、増粘剤、現像促進剤、および、有機または無機の沈殿防止剤などの公知の添加剤を加えることができる。 <Other ingredients>
In addition to the above components, a sensitizer, a crosslinking agent, an adhesion improver, a basic compound, a surfactant, and the like can be preferably added to the photosensitive resin composition of the present invention as necessary. Furthermore, known additives such as plasticizers, thermal radical generators, antioxidants, thermal acid generators, ultraviolet absorbers, thickeners, development accelerators, and organic or inorganic precipitation inhibitors are added. Can do.
感光性樹脂組成物は、(B)光重合開始剤との組み合わせにおいて、その分解を促進させるために、増感剤を含有することが好ましい。増感剤は、活性光線または放射線を吸収して電子励起状態となる。電子励起状態となった増感剤は、光重合開始剤と接触して、電子移動、エネルギー移動、発熱などの作用が生じる。これにより光重合開始剤は化学変化を起こして分解し、酸を生成する。好ましい増感剤の例としては、以下の化合物類に属しており、かつ350nmから450nmの波長域のいずれかに吸収波長を有する化合物を挙げることができる。 (Sensitizer)
The photosensitive resin composition preferably contains a sensitizer in combination with the photopolymerization initiator (B) in order to promote its decomposition. The sensitizer absorbs actinic rays or radiation and enters an electronically excited state. The sensitizer in an electronically excited state comes into contact with the photopolymerization initiator, and effects such as electron transfer, energy transfer, and heat generation occur. As a result, the photopolymerization initiator undergoes a chemical change and decomposes to generate an acid. Examples of preferred sensitizers include compounds belonging to the following compounds and having an absorption wavelength in any of the wavelength ranges from 350 nm to 450 nm.
感光性樹脂組成物は、必要に応じ、架橋剤を含有することが好ましい。架橋剤を添加することにより、本発明の感光性樹脂組成物により得られる硬化膜をより強固な膜とすることができる。架橋剤としては、熱によって架橋反応が起こるものであれば制限は無い。例えば、以下に述べる分子内に2個以上のエポキシ基またはオキセタニル基を有する化合物、アルコキシメチル基含有架橋剤、または、少なくとも1個のエチレン性不飽和二重結合を有する化合物を添加することができる。
これらの架橋剤の中で、分子内に2個以上のエポキシ基またはオキセタニル基を有する化合物が好ましく、エポキシ樹脂が特に好ましい。 (Crosslinking agent)
The photosensitive resin composition preferably contains a cross-linking agent as necessary. By adding a crosslinking agent, the cured film obtained by the photosensitive resin composition of the present invention can be made a stronger film. The crosslinking agent is not limited as long as a crosslinking reaction is caused by heat. For example, a compound having two or more epoxy groups or oxetanyl groups in the molecule described below, an alkoxymethyl group-containing crosslinking agent, or a compound having at least one ethylenically unsaturated double bond can be added. .
Among these crosslinking agents, compounds having two or more epoxy groups or oxetanyl groups in the molecule are preferable, and epoxy resins are particularly preferable.
これらは市販品として入手できる。 Specific examples of compounds having two or more epoxy groups in the molecule include bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, aliphatic epoxy resins, and the like. Can do.
These are available as commercial products.
感光性樹脂組成物は、密着改良剤を含有してもよい。感光性樹脂組成物に用いることができる密着改良剤は、基材となる無機物、例えば、シリコン、酸化シリコン、窒化シリコン等のシリコン化合物、金、銅、アルミニウム等の金属と絶縁膜との密着性を向上させる化合物である。具体的には、シランカップリング剤、チオール系化合物等が挙げられる。本発明で使用される密着改良剤としてのシランカップリング剤は、界面の改質を目的とするものであり、特に限定することなく、公知のものを使用することができる。
感光性樹脂組成物における密着改良剤の含有量は、感光性樹脂組成物中の全固形分100質量部に対して、0.1~30質量部が好ましく、0.5~10質量部がより好ましい。 (Adhesion improver)
The photosensitive resin composition may contain an adhesion improving agent. The adhesion improver that can be used for the photosensitive resin composition is an inorganic substance as a base material, for example, a silicon compound such as silicon, silicon oxide, or silicon nitride, adhesion between a metal such as gold, copper, or aluminum and an insulating film. It is a compound that improves Specific examples include silane coupling agents and thiol compounds. The silane coupling agent as an adhesion improving agent used in the present invention is for the purpose of modifying the interface, and any known silane coupling agent can be used without any particular limitation.
The content of the adhesion improving agent in the photosensitive resin composition is preferably 0.1 to 30 parts by mass, more preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition. preferable.
感光性樹脂組成物は、塩基性化合物を含有してもよい。塩基性化合物としては、化学増幅レジストで用いられるものの中から任意に選択して使用することができる。例えば、脂肪族アミン、芳香族アミン、複素環式アミン、第四級アンモニウムヒドロキシド、カルボン酸の第四級アンモニウム塩等が挙げられる。これらの具体例としては、特開2011-221494号公報の段落番号0204~0207に記載の化合物が挙げられる。 (Basic compound)
The photosensitive resin composition may contain a basic compound. The basic compound can be arbitrarily selected from those used in chemically amplified resists. Examples include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like. Specific examples thereof include compounds described in paragraph numbers 0204 to 0207 of JP2011-221494A.
感光性樹脂組成物は、界面活性剤を含有してもよい。界面活性剤としては、アニオン系、カチオン系、ノニオン系、または、両性のいずれでも使用することができるが、好ましい界面活性剤はノニオン系界面活性剤である。
ノニオン系界面活性剤の例としては、ポリオキシエチレン高級アルキルエーテル類、ポリオキシエチレン高級アルキルフェニルエーテル類、ポリオキシエチレングリコールの高級脂肪酸ジエステル類、シリコーン系、フッ素系界面活性剤を挙げることができる。また、以下商品名で、KP(信越化学工業(株)製)、ポリフロー(共栄社化学(株)製)、エフトップ(JEMCO社製)、メガファック(DIC(株)製)、フロラード(住友スリーエム(株)製)、アサヒガード、サーフロン(旭硝子(株)製)、PolyFox(OMNOVA社製)、SH-8400(東レ・ダウコーニングシリコーン)等の各シリーズを挙げることができる。また、界面活性剤として、特開2011-215580号公報の段落番号0185~0188に記載の化合物も採用できる。 (Surfactant)
The photosensitive resin composition may contain a surfactant. As the surfactant, any of anionic, cationic, nonionic, or amphoteric surfactants can be used, but a preferred surfactant is a nonionic surfactant.
Examples of nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants. . In addition, the following trade names are KP (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow (manufactured by Kyoeisha Chemical Co., Ltd.), F-Top (manufactured by JEMCO), MegaFac (manufactured by DIC Corporation), Florard (Sumitomo 3M) Asahi Guard, Surflon (manufactured by Asahi Glass Co., Ltd.), PolyFox (manufactured by OMNOVA), SH-8400 (Toray Dow Corning Silicone), and the like. As the surfactant, compounds described in paragraph numbers 0185 to 0188 of JP2011-215580A can also be employed.
感光性樹脂組成物は、酸化防止剤を含有してもよい。酸化防止剤としては、公知の酸化防止剤を含有することができる。酸化防止剤を添加することにより、硬化膜の着色を防止できる、または、分解による膜厚減少を低減でき、また、耐熱透明性に優れるという利点がある。
このような酸化防止剤としては、例えば、リン系酸化防止剤、ヒドラジド類、ヒンダードアミン系酸化防止剤、イオウ系酸化防止剤、フェノール系酸化防止剤、アスコルビン酸類、硫酸亜鉛、糖類、亜硝酸塩、亜硫酸塩、チオ硫酸塩、ヒドロキシルアミン誘導体などを挙げることができる。これらの中では、硬化膜の着色、膜厚減少の観点から特にフェノール系酸化防止剤が好ましい。これらは1種単独で用いてもよいし、2種以上を混合して用いてもよい。 (Antioxidant)
The photosensitive resin composition may contain an antioxidant. As an antioxidant, a well-known antioxidant can be contained. By adding an antioxidant, there is an advantage that coloring of the cured film can be prevented, or a decrease in film thickness due to decomposition can be reduced, and heat-resistant transparency is excellent.
Examples of such antioxidants include phosphorus antioxidants, hydrazides, hindered amine antioxidants, sulfur antioxidants, phenolic antioxidants, ascorbic acids, zinc sulfate, sugars, nitrites, sulfites. Examples thereof include salts, thiosulfates, and hydroxylamine derivatives. Among these, a phenolic antioxidant is particularly preferable from the viewpoint of coloring the cured film and reducing the film thickness. These may be used alone or in combination of two or more.
感光性樹脂組成物は、感度向上を目的に、酸増殖剤を用いることができる。用いることができる酸増殖剤は、酸触媒反応によってさらに酸を発生して反応系内の酸濃度を上昇させることができる化合物であり、酸が存在しない状態では安定に存在する化合物である。このような化合物は、1回の反応で1つ以上の酸が増えるため、反応の進行に伴って加速的に反応が進むが、発生した酸自体が自己分解を誘起するため、ここで発生する酸の強度は、酸解離定数、pKaとして3以下であるのが好ましく、特に2以下であるのが好ましい。
酸増殖剤の感光性樹脂組成物への含有量は、光重合開始剤100重量部に対して、10~1,000重量部とするのが、露光部と未露光部との溶解コントラストの観点から好ましく、20~500重量部とするのがさらに好ましい。 [Acid multiplication agent]
The photosensitive resin composition can use an acid growth agent for the purpose of improving sensitivity. The acid proliferating agent that can be used is a compound that can further generate an acid by an acid-catalyzed reaction to increase the acid concentration in the reaction system, and is a compound that exists stably in the absence of an acid. In such a compound, since one or more acids increase in one reaction, the reaction proceeds at an accelerated rate as the reaction proceeds. However, the generated acid itself induces self-decomposition, and is generated here. The acid strength is preferably 3 or less as an acid dissociation constant, pKa, and particularly preferably 2 or less.
The content of the acid proliferating agent in the photosensitive resin composition is 10 to 1,000 parts by weight with respect to 100 parts by weight of the photopolymerization initiator, from the viewpoint of dissolution contrast between the exposed part and the unexposed part. And preferably 20 to 500 parts by weight.
感光性樹脂組成物は、現像促進剤を含有することができる。現像促進剤としては、現像促進効果のある任意の化合物を使用できるが、カルボキシル基、フェノール性水酸基、およびアルキレンオキシ基の群から選ばれる少なくとも一種の構造を有する化合物であることが好ましく、カルボキシル基またはフェノール性水酸基を有する化合物がより好ましく、フェノール性水酸基を有する化合物が最も好ましい。また、(M)現像促進剤の分子量としては、100~2000が好ましく、100~1000がさらに好ましく、最適には100~800である。 (Development accelerator)
The photosensitive resin composition can contain a development accelerator. As the development accelerator, any compound having a development acceleration effect can be used, but it is preferably a compound having at least one structure selected from the group consisting of a carboxyl group, a phenolic hydroxyl group, and an alkyleneoxy group. Or the compound which has a phenolic hydroxyl group is more preferable, and the compound which has a phenolic hydroxyl group is the most preferable. The molecular weight of the (M) development accelerator is preferably 100 to 2000, more preferably 100 to 1000, and most preferably 100 to 800.
次に、本発明の硬化膜の製造方法に関する好ましい実施形態を説明する。本実施形態の製造方法は、以下の(1)~(5)の工程を含むことが好ましい(図5参照)。
(1)感光性樹脂組成物を基板上に適用する工程;
(2)適用された感光性樹脂組成物から溶剤を除去する工程(プリベーク工程);
(3)活性放射線により露光する工程;
(3.5)必要に応じた後加熱;
(4)水性現像液等により現像する工程;
(4.5)活性放射線により露光する工程(ポスト露光工程、任意);
(5)熱硬化するポストベーク工程。
以下に各工程を順に説明する。 [Method for producing cured film]
Next, a preferred embodiment relating to the method for producing a cured film of the present invention will be described. The manufacturing method of this embodiment preferably includes the following steps (1) to (5) (see FIG. 5).
(1) A step of applying a photosensitive resin composition on a substrate;
(2) A step of removing the solvent from the applied photosensitive resin composition (prebaking step);
(3) a step of exposing with actinic radiation;
(3.5) post-heating as necessary;
(4) A step of developing with an aqueous developer or the like;
(4.5) Step of exposing with actinic radiation (post exposure step, optional);
(5) A post-bake process for thermosetting.
Each step will be described below in order.
(2)の溶剤除去工程では、適用された上記の膜から、減圧(バキューム)および/または加熱により、溶剤を除去して基板上に乾燥塗膜を形成させる。 In the application step (1), it is preferable to apply the photosensitive resin composition onto the substrate to form a wet film containing a solvent.
In the solvent removing step (2), the solvent is removed from the applied film by vacuum (vacuum) and / or heating to form a dry coating film on the substrate.
(5)のポストベーク工程において、得られたネガ画像を加熱することにより、硬化膜を形成することができる。この加熱は、150℃以上の高温に加熱することが好ましく、180~250℃に加熱することがより好ましく、200~240℃に加熱することが特に好ましい。加熱時間は、加熱温度などにより適宜設定できるが、10~120分の範囲内とすることが好ましい。
ポストベークの前に、比較的低温でベークを行った後にポストベークすることもできる(ミドルベーク工程の追加)。ミドルベークを行う場合は、90~150℃で1~60分加熱した後に、200℃以上の高温でポストベークすることが好ましい。また、ミドルベーク、ポストベークを3段階以上の多段階に分けて加熱する事もできる。 In the developing step (4), a portion that has not been polymerized and cured is developed using an alkaline developer. By removing the non-exposed area containing the resin composition having a carboxyl group or a phenolic hydroxyl group that is easily dissolved in an alkaline developer, a negative image is formed. In addition, you may perform post exposure to this process as needed (process 4.5).
In the post-baking step (5), a cured film can be formed by heating the obtained negative image. This heating is preferably performed at a high temperature of 150 ° C. or more, more preferably 180 to 250 ° C., and particularly preferably 200 to 240 ° C. The heating time can be appropriately set depending on the heating temperature or the like, but is preferably in the range of 10 to 120 minutes.
Prior to post-baking, post-baking can be performed after baking at a relatively low temperature (addition of a middle baking process). When middle baking is performed, it is preferable to post-bake at a high temperature of 200 ° C. or higher after heating at 90 to 150 ° C. for 1 to 60 minutes. Moreover, middle baking and post-baking can be heated in three or more stages.
(5)のポストベーク工程により熱硬化して得られた硬化膜をドライエッチングレジストとして使用する場合、エッチング処理としてはアッシング、プラズマエッチング、オゾンエッチングなどのドライエッチング処理を行うことができる。 By adding a step of irradiating the development pattern with actinic rays, preferably ultraviolet rays, before the post-baking step, the crosslinking reaction can be promoted by actinic ray irradiation. Furthermore, the cured film obtained from the photosensitive resin composition of the present invention can also be used as a dry etching resist.
When the cured film obtained by thermal curing in the post-baking step (5) is used as a dry etching resist, dry etching processing such as ashing, plasma etching, ozone etching, or the like can be performed as the etching processing.
これらのうち、水酸化ナトリウム、水酸化カリウム、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、コリン(2-ヒドロキシエチルトリメチルアンモニウムヒドロキシド)が好ましい。
また、上記アルカリ類の水溶液にメタノールやエタノールなどの水溶性有機溶剤や界面活性剤を適当量添加した水溶液を現像液として使用することもできる。
現像液のpHは、好ましくは10.0~14.0である。
現像時間は、好ましくは30~180秒間であり、また、現像の手法は液盛り法、ディップ法等の何れでもよい。現像後は、流水洗浄を30~90秒間行い、所望のパターンを形成させることができる。現像の後に、リンス工程を行うこともできる。リンス工程では、現像後の基板を純水などで洗うことで、付着している現像液除去、現像残渣除去を行う。リンス方法は公知の方法を用いることができる。例えばシャワーリンスやディップリンスなどを挙げる事ができる。 The developer used in the development step preferably contains a basic compound. Examples of basic compounds include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkali metal carbonates such as sodium carbonate, potassium carbonate, and cesium carbonate; sodium bicarbonate, potassium bicarbonate Alkali metal bicarbonates such as: tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, diethyldimethylammonium hydroxide, and other tetraalkylammonium hydroxides: Alkyl) trialkylammonium hydroxides; silicates such as sodium silicate and sodium metasilicate; ethylamine, propylamine, diethylamine, triethylammonium Alkylamines such as diamine; alcohol amines such as dimethylethanolamine and triethanolamine; 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3.0 ] Among these, alicyclic amines such as 5-nonene can be used. Of these, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium Hydroxide and choline (2-hydroxyethyltrimethylammonium hydroxide) are preferred.
An aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer.
The pH of the developer is preferably 10.0 to 14.0.
The development time is preferably 30 to 180 seconds, and the development method may be either a liquid piling method or a dipping method. After development, washing with running water can be performed for 30 to 90 seconds to form a desired pattern. A rinsing step can also be performed after development. In the rinsing step, the developed substrate and the development residue are removed by washing the developed substrate with pure water or the like. A known method can be used as the rinsing method. For example, shower rinse and dip rinse can be mentioned.
本発明の硬化膜は、層間絶縁膜として好適に用いることができる。また、本発明の硬化膜は、上述した本発明の硬化膜の形成方法により得られた硬化膜であることが好ましい。
本発明の感光性樹脂組成物により、絶縁性に優れ、高温でベークされた場合においても高い透明性を有する層間絶縁膜が得られる。本発明の感光性樹脂組成物を用いてなる層間絶縁膜は、高い透明性を有し、硬化膜物性に優れるため、液晶表示装置や有機EL表示装置の用途に有用である。 The cured film of the present invention is a cured film obtained by curing the above-described photosensitive resin composition of the present invention.
The cured film of the present invention can be suitably used as an interlayer insulating film. Moreover, it is preferable that the cured film of this invention is a cured film obtained by the formation method of the cured film of this invention mentioned above.
With the photosensitive resin composition of the present invention, an interlayer insulating film having excellent insulation and high transparency even when baked at high temperatures can be obtained. Since the interlayer insulating film using the photosensitive resin composition of the present invention has high transparency and excellent cured film properties, it is useful for liquid crystal display devices and organic EL display devices.
本発明の液晶表示装置は、本発明の硬化膜を具備する。一部冒頭に説明したことと重複する点もあるが、下記に図面を参照してその好ましい実施形態について説明する。
本発明の液晶表示装置としては、上記本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の液晶表示装置を挙げることができる。
例えば、本発明の液晶表示装置が具備するTFT(Thin-Film Transistor)の具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
また、本発明の液晶表示装置が取りうる液晶駆動方式としてはTN(TwistedNematic)方式、VA(Virtical Alignment)方式、IPS(In-Place-Switching)方式、FFS(Frings Field Switching)方式、OCB(Optical Compensated Bend)方式などが挙げられる。
パネル構成においては、COA(Color Filter on Allay)方式の液晶表示装置でも本発明の硬化膜を用いることができ、例えば、特開2005-284291の有機絶縁膜(115)や、特開2005-346054の有機絶縁膜(212)として用いることができる。また、本発明の液晶表示装置が取りうる液晶配向膜の具体的な配向方式としてはラビング配向法、光配向方などが挙げられる。また、特開2003-149647号公報や特開2011-257734号公報に記載のPSA(Polymer Sustained Alignment)技術によってポリマー配向支持されていてもよい。
また、本発明の感光性樹脂組成物および本発明の硬化膜は、上記用途に限定されず種々の用途に使用することができる。例えば、平坦化膜や層間絶縁膜以外にも、カラーフィルターの保護膜や、液晶表示装置における液晶層の厚みを一定に保持するためのスペーサーや固体撮像素子においてカラーフィルター上に設けられるマイクロレンズ等に好適に用いることができる。
図1は、アクティブマトリックス方式の液晶表示装置10の一例を示す概念的断面図である。このカラー液晶表示装置10の構造は先に述べたとおりである。
また、液晶表示装置は、3D(立体視)型のものとしたり、タッチパネル型のものとしたりすることも可能である。さらにフレキシブル型にすることも可能であり、特開2011-145686号公報に記載の第2層間絶縁膜(48)や、特開2009-258758号公報に記載の層間絶縁膜(520)として用いることができる。
更に、スタティック駆動方式の液晶表示装置でも、本発明を適用することで意匠性の高いパターンを表示させることも可能である。例として、特開2001-125086号公報に記載されているようなポリマーネットワーク型液晶の絶縁膜として本発明を適用することができる。 [Liquid Crystal Display]
The liquid crystal display device of the present invention comprises the cured film of the present invention. Although there are some points overlapping with those described at the beginning, preferred embodiments thereof will be described below with reference to the drawings.
The liquid crystal display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and known liquid crystal displays having various structures. An apparatus can be mentioned.
For example, specific examples of TFT (Thin-Film Transistor) included in the liquid crystal display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
Further, the liquid crystal driving methods that can be adopted by the liquid crystal display device of the present invention include TN (Twisted Nematic) method, VA (Virtual Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB (Optical). Compensated Bend) method and the like.
In the panel configuration, the cured film of the present invention can also be used in a COA (Color Filter on Array) type liquid crystal display device. For example, the organic insulating film (115) of Japanese Patent Application Laid-Open No. 2005-284291, or Japanese Patent Application Laid-Open No. 2005-346054. It can be used as an organic insulating film (212). Specific examples of the alignment method of the liquid crystal alignment film that the liquid crystal display device of the present invention can take include a rubbing alignment method and a photo alignment method. Further, the polymer orientation may be supported by a PSA (Polymer Sustained Alignment) technique described in JP-A Nos. 2003-149647 and 2011-257734.
Moreover, the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, It can be used for various uses. For example, in addition to the planarization film and interlayer insulating film, a protective film for the color filter, a spacer for keeping the thickness of the liquid crystal layer in the liquid crystal display device constant, a microlens provided on the color filter in the solid-state imaging device, etc. Can be suitably used.
FIG. 1 is a conceptual cross-sectional view showing an example of an active matrix liquid
Further, the liquid crystal display device can be a 3D (stereoscopic) type or a touch panel type. Further, it can be made flexible, and used as the second interlayer insulating film (48) described in Japanese Patent Application Laid-Open No. 2011-145686 and the interlayer insulating film (520) described in Japanese Patent Application Laid-Open No. 2009-258758. Can do.
In addition, a statically driven liquid crystal display device can display a pattern with high designability by applying the present invention. As an example, the present invention can be applied as an insulating film of a polymer network type liquid crystal as described in JP-A-2001-125086.
本発明の有機EL表示装置は、本発明の硬化膜を具備する。
本発明の有機EL表示装置としては、上記本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の各種有機EL表示装置や液晶表示装置を挙げることができる。
例えば、本発明の有機EL表示装置が具備するTFT(Thin-Film Transistor)の具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
図2は、有機EL表示装置の一例の構成概念図であり、その構造は先に述べたとおりである。 [Organic EL display device]
The organic EL display device of the present invention includes the cured film of the present invention.
The organic EL display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and various known structures having various structures. Examples thereof include an organic EL display device and a liquid crystal display device.
For example, specific examples of TFT (Thin-Film Transistor) included in the organic EL display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
FIG. 2 is a conceptual diagram of an example of an organic EL display device, and its structure is as described above.
使用した各モノマーおよびその使用量を、下記表に記載のものに変更した以外は、樹脂C-1の合成と同様にして、各共重合体をそれぞれ合成した。 GMA (26.51 parts (0.21 molar equivalent)), MAA (18.35 parts (0.24 molar equivalent)), St (41.62 parts (0.45 molar equivalent)), EcHMM (13.52) Part (0.10 molar equivalent) and PGMEA (257.0 parts) were heated under a nitrogen stream to 80 ° C. While stirring the mixed solution, radical polymerization initiator V-65 (trade name, Japanese) A mixed solution of 3 parts) and PGMEA (100.0 parts) manufactured by Kojunkaku Kogyo Co., Ltd. was added dropwise over 2.5 hours, and the resin was reacted by reacting at 70 ° C. for 4 hours after the completion of the addition. A PGMEA solution of C-1 (solid content concentration: 40%) was obtained.
Each copolymer was synthesized in the same manner as the synthesis of Resin C-1, except that each monomer used and the amount used thereof were changed to those shown in the following table.
重量平均分子量(Mw)は、ゲルパーミエーションクロマトグラフィー(GPC)による分子量測定(ポリスチレン換算)で得られた値である。なお、得られた分子量はC-1~C-8では、いずれもMw 15,000程度であった。
キャリア:テトラヒドロフラン
カラム: トーソー(TOSOH)株式会社製
TSK-gel Super AWM-H(商品名) <Measurement method of molecular weight>
The weight average molecular weight (Mw) is a value obtained by molecular weight measurement (polystyrene conversion) by gel permeation chromatography (GPC). The obtained molecular weights of C-1 to C-8 were all about Mw 15,000.
Carrier: Tetrahydrofuran Column: TSK-gel Super AWM-H (trade name) manufactured by Tosoh Corporation
AMA:アリルメタクリレート
MAA:メタクリル酸
EcHMM:3,4-エポキシシクロヘキシルメチルメタクリレート
HEMA:メタクリル酸-2-ヒドロキシエチル
St:スチレン
DCPM:ジシクロペンタニルメタクリレート
BzMA:ベンジルメタクリレート
V-65:2,2’-アゾビス(2,4-ジメチルバレロニトリル)(和光純薬工業製)
PGMEA:プロピレングリコールモノメチルエーテルアセテート GMA: glycidyl methacrylate AMA: allyl methacrylate MAA: methacrylic acid EcHMM: 3,4-epoxycyclohexylmethyl methacrylate HEMA: 2-hydroxyethyl methacrylate St: styrene DCPM: dicyclopentanyl methacrylate BzMA: benzyl methacrylate V-65: 2 , 2'-Azobis (2,4-dimethylvaleronitrile) (manufactured by Wako Pure Chemical Industries)
PGMEA: Propylene glycol monomethyl ether acetate
表2の組成となるように各成分を溶解混合し、口径0.2μmのポリテトラフルオロエチレン製フィルターで濾過して、感光性樹脂組成物1~28を得た。 <Preparation of photosensitive resin composition>
Each component was dissolved and mixed so as to have the composition shown in Table 2, and filtered through a polytetrafluoroethylene filter having a diameter of 0.2 μm to obtain photosensitive resin compositions 1-28.
4μm四方のホールパターンの遮光部と、その周囲に透過部を有するフォトマスク上に、スパッタリング法を用いて、モリブデンシリサイド酸化膜よりなる位相シフタ膜を形成し、200℃以上の加熱処理を施して位相シフトマスク用ブランクスを作成した。 <Creation of halftone phase difference mask (1)>
Using a sputtering method, a phase shifter film made of a molybdenum silicide oxide film is formed on a photomask having a 4 μm square hole pattern light-shielding portion and a transmissive portion around it, and subjected to heat treatment at 200 ° C. or higher. Blanks for phase shift mask were prepared.
※バイナリマスクとは、位相シフタ部の存在しない通常のマスクを示す。
※表中、パターンサイズとは図4のA、位相シフタ部サイズとは図4のBの幅を示す。
* A binary mask is a normal mask that does not have a phase shifter.
* In the table, the pattern size indicates the width of A in FIG. 4, and the phase shifter portion size indicates the width of B in FIG.
ヘキサメチルジシラザン蒸気で1分間表面処理をしたガラス基板(コーニング1737、0.7mm厚(コーニング社製))上に、各感光性樹脂組成物をスリット塗布した後、85℃/150秒ホットプレート上でプリベークして溶剤を揮発させ、膜厚4.0μmの感光性樹脂組成物層を形成した。
次に、得られた感光性樹脂組成物層を、キヤノン(株)製PLA-501F露光機(超高圧水銀ランプ)を用いて、マスクM-1を介して露光した。露光にはghi線を用いた。このときの露光量は45mJ/cm2であった。そして、露光後の感光性組成物層を、アルカリ現像液(0.4質量%のテトラメチルアンモニウムヒドロキシド水溶液)で24℃/60秒間現像した後、超純水で20秒リンスした。以上の工程により、試験101の永久膜を得た。 <Examples and comparative examples>
Each photosensitive resin composition was slit-coated on a glass substrate (Corning 1737, 0.7 mm thickness (manufactured by Corning)) treated with hexamethyldisilazane vapor for 1 minute, and then heated at 85 ° C. for 150 seconds. Pre-baking was performed to volatilize the solvent, and a photosensitive resin composition layer having a film thickness of 4.0 μm was formed.
Next, the obtained photosensitive resin composition layer was exposed through a mask M-1 using a PLA-501F exposure machine (extra-high pressure mercury lamp) manufactured by Canon Inc. Ghi line was used for exposure. The exposure amount at this time was 45 mJ / cm 2 . Then, the exposed photosensitive composition layer was developed with an alkali developer (0.4 mass% tetramethylammonium hydroxide aqueous solution) at 24 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds. Through the above steps, a permanent film of Test 101 was obtained.
これらの実施例および比較例について、目的とするそれぞれのマスク径のホールパターンを形成する時の最適露光量(Eopt)におけるホール径、矩形性、および膜減りを評価した。 Permanent films of other examples and comparative examples were prepared in the same process as in the test 101 except that the compositions and masks used in the test 101 were changed to the compositions and masks described in the following table.
For these examples and comparative examples, the hole diameter, rectangularity, and film reduction at the optimum exposure dose (Eopt) when forming a hole pattern of each target mask diameter were evaluated.
5 マスク径と実ホールパターン径の比が±5%以内のもの
4 マスク径と実ホールパターン径の比が±5%を超え、かつ±8%以内のもの
3 マスク径と実ホールパターン径の比が±8%を超え、かつ±12%以内のもの
2 マスク径と実ホールパターン径の比が±12%を超え、かつ±15%以内のもの
1 マスク径と実ホールパターン径の比が±15%を超えるもの
※ボトム(底面)のサイズを基準に規定
※露光量は、各マスク径について解像する最も適当な露光量にて露光
(試験c17を除く。c17は上記適当露光量の2/3の露光量とした。)
※膜厚想定3μm,c17は1.5μm Evaluation criteria for hole diameter 5 Ratio of mask diameter to actual hole pattern diameter is within ± 5% 4 Ratio of mask diameter to actual hole pattern diameter exceeds ± 5% and within ± 8% 3 Mask diameter and actual The ratio of hole pattern diameter exceeds ± 8% and within ± 12% 2 The ratio of mask diameter to actual hole pattern diameter exceeds ± 12% and within ± 15% 1 Mask diameter and actual hole pattern Diameter ratio exceeds ± 15% * Specified based on bottom (bottom) size * Exposure is the most appropriate exposure that resolves for each mask diameter (excluding test c17. C17 is the above) The exposure amount was 2/3 of the appropriate exposure amount.)
* Thickness assumed 3μm, c17 is 1.5μm
5 パターンのエッジ角度が50°以上60°未満であるもの
4 パターンのエッジ角度が40°以上50°未満であるもの
3 パターンのエッジ角度が30°以上40°未満であるもの
2 パターンのエッジ角度が30°未満であるもの
1 測定不可能な状態のもの Rectangularity evaluation criteria (see Fig. 6)
5 The edge angle of the pattern is 50 ° or more and less than 60 ° 4 The edge angle of the pattern is 40 ° or more and less than 50 ° 3 The edge angle of the pattern is 30 ° or more and less than 40 ° 2 The edge angle of the pattern Is less than 30 ° 1 Unmeasurable
5 パターン外のprebake後・postbake後膜厚比が85%以上のもの
4 パターン外のprebake後・postbake後膜厚比が80%以上85%未満のもの
3 パターン外のprebake後・postbake後膜厚比が75%以上80%未満のもの
2 パターン外のprebake後・postbake後膜厚比が70%以上75%未満のもの
1 パターン外のprebake後・postbake後膜厚比が70%未満のもの Evaluation criteria for film reduction 5 Thickness ratio after postbake / postbake outside of pattern is 85% or more 4 Thickness ratio after prebake outside pattern / postbake after 80% and less than 85% 3 After prebake outside pattern Thickness ratio after postbake is 75% or more and less than 80% 2 Thickness ratio after prebake / postbake outside the pattern is 70% or more and less than 75% 1 Thickness ratio after postbake / postbake outside the pattern is 70% Less than
3 塗布ムラ・塗布スジ・跡の発生がみられないもの
2 塗布ムラ・塗布スジ・跡の発生がごくわずかみられるもの
1 塗布ムラ・塗布スジ・跡の発生がみられるもの
5 上記評価の合計点数が18点のもの
4 上記評価の合計点数が15点以上18点未満のもの
3 上記評価の合計点数が13点以上15点未満のもの
2 上記評価の合計点数が10点以上13点未満のもの
1 上記評価の合計点数が9点未満のもの Comprehensive evaluation criteria 5 The total score of the above evaluation is 18 points 4 The total score of the above evaluation is 15 points or more and less than 18
c18は輪帯照明を用いて露光した例である。
比較例c17ではバイナリマスクを用いて、低露光条件で露光することでホール径・矩形性を調整したが、膜減り大きく良好な結果が得られなかった。また、c18では、バイナリマスクを用いて他の高解像技術(輪帯照明)を用いたが、矩形性・膜減りとの両立ができなかった。以上より、バイナリマスクを用いての露光量調整や、輪帯照明等の他の高解像手段では、いずれも矩形性、膜減りとの鼎立を実現することができないことが分かる。 As can be seen from the above results, according to the method for producing a permanent film for an optical material of the present invention, the mask edge followability (mask linearity) is good even for a fine hole pattern, and the angle of the pattern edge A large permanent film can be obtained. Further, it can be seen that a permanent film suitable for handling can be obtained with little film loss at portions other than the pattern.
In Comparative Example c17, the hole diameter / rectangularity was adjusted by performing exposure under low exposure conditions using a binary mask. However, the film thickness decreased and good results were not obtained. In c18, another high-resolution technique (annular illumination) was used using a binary mask, but it was impossible to achieve both rectangularity and film reduction. From the above, it can be seen that neither exposure amount adjustment using a binary mask nor other high-resolution means such as annular illumination can achieve the establishment of rectangularity and film reduction.
2 バックライトユニット
3 ブラックマトリックス
4,5 ガラス基板
6 TFT
7 硬化膜(層間絶縁膜)
8 液晶
10 液晶表示装置
11 ITO透明電極
12 コンタクトホール
20 有機EL表示装置
21 TFT
22 配線
23 絶縁膜(層間絶縁膜)
24 平坦化膜
25 第一電極
26 ガラス基板
27 コンタクトホール
28 絶縁膜
30 ハーフトーンマスク
32 透明基材
31 位相シフタ部(位相変更膜)
33、34、35 露光強度曲線 1
7 Cured film (interlayer insulation film)
8
22 Wiring 23 Insulating film (interlayer insulating film)
24
33, 34, 35 Exposure intensity curve
Claims (20)
- 感光性樹脂組成物を露光して該露光部を硬化し、その後に非露光部を除去し、残された硬化膜を永久膜とする光学材料用永久膜の製造方法であって、
前記感光性樹脂組成物が、(A)重合性モノマーと、(B)光重合開始剤と、(C)アルカリ可溶性樹脂と、(D)溶剤とを含有し、
該感光性樹脂組成物に、g線、h線、およびi線のうちから選ばれる活性放射線を、位相シフタ部における透過率0.1%以上20%以下のハーフトーン位相差マスクを介して照射し前記組成物を露光する光学材料用永久膜の製造方法。 It is a method for producing a permanent film for an optical material by exposing a photosensitive resin composition to cure the exposed part, then removing a non-exposed part, and using the remaining cured film as a permanent film,
The photosensitive resin composition contains (A) a polymerizable monomer, (B) a photopolymerization initiator, (C) an alkali-soluble resin, and (D) a solvent,
The photosensitive resin composition is irradiated with actinic radiation selected from g-line, h-line, and i-line through a halftone phase difference mask having a transmittance of 0.1% to 20% in the phase shifter portion. A method for producing a permanent film for an optical material, wherein the composition is exposed. - 前記残された硬化膜を加熱して前記永久膜とする請求項1に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to claim 1, wherein the remaining cured film is heated to form the permanent film.
- 前記ハーフトーン位相差マスクは光透過性の透明基材に対して透過光の一部を遮光する位相シフタ部が設けられてなり、該位相シフタ部には照射された光の位相を反転する性質が付与されている請求項1または2に記載の光学材料用永久膜の製造方法。 The halftone phase difference mask is provided with a phase shifter portion that blocks a part of transmitted light with respect to a light-transmitting transparent base material, and the phase shifter portion reverses the phase of the irradiated light. The method for producing a permanent film for an optical material according to claim 1 or 2, wherein:
- 前記(C)アルカリ可溶性樹脂が架橋性基を有する構成単位を有する請求項1~3のいずれか1項に記載の光学材料用永久膜の製造方法。 4. The method for producing a permanent film for an optical material according to claim 1, wherein the (C) alkali-soluble resin has a structural unit having a crosslinkable group.
- 前記活性放射線が、g線、h線、およびi線のうちから選ばれる複数を混合したものである請求項1~4のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 1 to 4, wherein the actinic radiation is a mixture of a plurality selected from g-line, h-line, and i-line.
- 前記感光性樹脂組成物の露光量が30mJ/cm2以上1,000mJ/cm2以下である請求項1~5のいずれか1項に記載の光学材料用永久膜の製造方法。 6. The method for producing a permanent film for an optical material according to claim 1, wherein an exposure amount of the photosensitive resin composition is 30 mJ / cm 2 or more and 1,000 mJ / cm 2 or less.
- 前記(C)アルカリ可溶性樹脂がカルボキシル基を有する構成単位を含有する請求項1~6のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 1 to 6, wherein the (C) alkali-soluble resin contains a structural unit having a carboxyl group.
- 前記(A)重合性モノマーが、エチレン性不飽和二重結合を有する化合物である請求項1~7のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 1 to 7, wherein the polymerizable monomer (A) is a compound having an ethylenically unsaturated double bond.
- 前記重合性モノマーが下記式(A)で表される請求項1~8のいずれか1項に記載の光学材料用永久膜の製造方法。
(式中、Lは2価以上の連結基を表す。Aは重合性官能基を表す。Raは置換基を表す。naは1~10の整数を表す。nbは0~9の整数を表す。na+nbは10以下である。) The method for producing a permanent film for an optical material according to any one of claims 1 to 8, wherein the polymerizable monomer is represented by the following formula (A).
(In the formula, L represents a divalent or higher linking group. A represents a polymerizable functional group. Ra represents a substituent. Na represents an integer of 1 to 10. nb represents an integer of 0 to 9.) Na + nb is 10 or less.) - 前記(A)重合性モノマーが、4つ以上の重合性官能基を有する化合物である請求項1~9のいずれか1項に記載の光学材料用永久膜の製造方法。 10. The method for producing a permanent film for an optical material according to claim 1, wherein the polymerizable monomer (A) is a compound having four or more polymerizable functional groups.
- 前記(C)アルカリ可溶性樹脂の前記架橋性基がエポキシ基、オキセタニル基、およびエチレン性不飽和基よりなる群から選ばれた少なくとも1つの基である請求項1~10のいずれか1項に記載の光学材料用永久膜の製造方法。 The crosslinkable group of the (C) alkali-soluble resin is at least one group selected from the group consisting of an epoxy group, an oxetanyl group, and an ethylenically unsaturated group. Of manufacturing a permanent film for optical material.
- 前記(D)溶剤が、沸点160℃以上の溶剤を前記全溶剤質量に対して5質量%以上含有する請求項1~11のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 1 to 11, wherein the (D) solvent contains 5% by mass or more of a solvent having a boiling point of 160 ° C or higher with respect to the total mass of the solvent.
- 前記残された硬化膜の加熱を150℃以上の温度で行う請求項2~12のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 2 to 12, wherein the remaining cured film is heated at a temperature of 150 ° C or higher.
- 前記非露光部の除去を、塩基性化合物を含む現像液で行う請求項1~13のいずれか1項に記載の光学材料用永久膜の製造方法。 The method for producing a permanent film for an optical material according to any one of claims 1 to 13, wherein the non-exposed portion is removed with a developer containing a basic compound.
- 請求項1~14のいずれか1項に記載の製造方法により製造された硬化膜。 A cured film produced by the production method according to any one of claims 1 to 14.
- 層間絶縁膜である請求項15に記載の硬化膜。 The cured film according to claim 15, which is an interlayer insulating film.
- 下記式(A)で表される重合性モノマーを重合硬化させた請求項15または16に記載の硬化膜。
(式中、Lは2価以上の連結基を表す。Aは重合性官能基を表す。Raは置換基を表す。naは1~10の整数を表す。nbは0~9の整数を表す。na+nbは10以下である。) The cured film according to claim 15 or 16, wherein a polymerizable monomer represented by the following formula (A) is polymerized and cured.
(In the formula, L represents a divalent or higher linking group. A represents a polymerizable functional group. Ra represents a substituent. Na represents an integer of 1 to 10. nb represents an integer of 0 to 9.) Na + nb is 10 or less.) - アルカリ可溶性樹脂として、少なくとも、不飽和カルボン酸及び不飽和カルボン酸無水物からなる群より選択される少なくとも1種の単量体と、官能基含有不飽和化合物とを共重合してなる樹脂を用いる請求項15~17のいずれか1項に記載の硬化膜。 As the alkali-soluble resin, a resin obtained by copolymerizing at least one monomer selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride and a functional group-containing unsaturated compound is used. The cured film according to any one of claims 15 to 17.
- 請求項15~18のいずれか1項に記載の硬化膜を具備する有機EL表示装置。 An organic EL display device comprising the cured film according to any one of claims 15 to 18.
- 請求項15~18のいずれか1項に記載の硬化膜を具備する液晶表示装置。
A liquid crystal display device comprising the cured film according to any one of claims 15 to 18.
Priority Applications (3)
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CN201380053938.3A CN104718498B (en) | 2012-10-17 | 2013-10-15 | Method for producing permanent film for optical material, cured film, organic EL display device, and liquid crystal display device |
JP2014542149A JP5976831B2 (en) | 2012-10-17 | 2013-10-15 | Method for producing permanent film for optical material, method for producing organic EL display device, and method for producing liquid crystal display device |
KR20157006463A KR20150043452A (en) | 2012-10-17 | 2013-10-15 | Process for producing permanent film for optical material, cured film produced thereby, and organic el display device and liquid-crystal display device each obtained using said cured film |
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JP2012229970 | 2012-10-17 | ||
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JP (1) | JP5976831B2 (en) |
KR (1) | KR20150043452A (en) |
CN (1) | CN104718498B (en) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150316797A1 (en) * | 2013-09-24 | 2015-11-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mask and method of fabricating spacers |
JP2020140081A (en) * | 2019-02-28 | 2020-09-03 | 凸版印刷株式会社 | Half tone mask, and pattern formation method using the same |
WO2021192058A1 (en) * | 2020-03-24 | 2021-09-30 | 昭和電工マテリアルズ株式会社 | Photosensitive resin composition, photosensitive element, and method for producing wiring board |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107703717B (en) * | 2016-08-08 | 2023-01-24 | 东京应化工业株式会社 | Positive photosensitive resin composition, method for producing metal wiring, and laminate |
TWI781141B (en) * | 2017-02-21 | 2022-10-21 | 日商住友化學股份有限公司 | Resin composition, film and copolymer |
US11561470B2 (en) * | 2017-03-29 | 2023-01-24 | Toray Industries, Inc. | Negative photosensitive resin composition, cured film, element provided with cured film, organic EL display provided with cured film, and method for producing same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1165083A (en) * | 1997-08-14 | 1999-03-05 | Hitachi Ltd | Manufacture of semiconductor device, and photomask and its manufacture |
JP2004004733A (en) * | 2002-04-15 | 2004-01-08 | Sharp Corp | Radiation sensitive resin composition, method for forming patterned insulative film, active matrix substrate and flat panel display device with active matrix substrate, and manufacturing method of flat panel display device |
JP2006313879A (en) * | 2005-04-04 | 2006-11-16 | Advanced Lcd Technologies Development Center Co Ltd | Thin film transistor, manufacturing method therefor, integrated circuit, and liquid crystal display |
JP2011209692A (en) * | 2010-03-11 | 2011-10-20 | Fujifilm Corp | Positive photosensitive resin composition, method for forming cured film, cured film, liquid crystal display device and organic el display device |
JP2011215226A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, blank for multi-level gradation photomask, and method for transferring pattern |
JP2012042837A (en) * | 2010-08-20 | 2012-03-01 | Fujifilm Corp | Positive photosensitive composition, method for forming cured film, cured film, liquid crystal display device and organic el display device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003064032A (en) * | 2001-08-22 | 2003-03-05 | Fuji Photo Film Co Ltd | Polymerizable compound, liquid crystalline composition and polymer of the same |
CN1924697B (en) * | 2001-11-27 | 2012-06-20 | Hoya株式会社 | Halftone phase shift mask blank, halftone phase shift mask, and manufacturing method thereof |
JP3754378B2 (en) * | 2002-02-14 | 2006-03-08 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor integrated circuit device |
US6984476B2 (en) * | 2002-04-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device |
JP4805587B2 (en) * | 2005-02-24 | 2011-11-02 | エーユー オプトロニクス コーポレイション | Liquid crystal display device and manufacturing method thereof |
JP4633500B2 (en) * | 2005-03-01 | 2011-02-16 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Negative photosensitive resin composition containing epoxy-containing substance |
CN101452858A (en) * | 2005-04-04 | 2009-06-10 | 株式会社液晶先端技术开发中心 | Method of producing thin film transistor and method of exposure using attenuated type mask |
KR101313538B1 (en) * | 2006-04-06 | 2013-10-01 | 주식회사 동진쎄미켐 | Negative photosensitive resin composition |
JP4936515B2 (en) * | 2006-05-18 | 2012-05-23 | Hoya株式会社 | Photomask manufacturing method and halftone phase shift mask manufacturing method |
JP4757732B2 (en) * | 2006-08-02 | 2011-08-24 | 富士フイルム株式会社 | PHOTOSENSITIVE COMPOSITION AND PHOTOSENSITIVE TRANSFER MATERIAL USING THE SAME, LIGHT SHUTTING FILM FOR DISPLAY DEVICE AND METHOD FOR FORMING THE SAME |
JP5712856B2 (en) * | 2010-09-22 | 2015-05-07 | Jnc株式会社 | Photosensitive compound and photosensitive polymer comprising the compound |
-
2013
- 2013-10-15 JP JP2014542149A patent/JP5976831B2/en not_active Expired - Fee Related
- 2013-10-15 CN CN201380053938.3A patent/CN104718498B/en not_active Expired - Fee Related
- 2013-10-15 KR KR20157006463A patent/KR20150043452A/en active Search and Examination
- 2013-10-15 WO PCT/JP2013/078005 patent/WO2014061674A1/en active Application Filing
- 2013-10-16 TW TW102137353A patent/TWI602022B/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1165083A (en) * | 1997-08-14 | 1999-03-05 | Hitachi Ltd | Manufacture of semiconductor device, and photomask and its manufacture |
JP2004004733A (en) * | 2002-04-15 | 2004-01-08 | Sharp Corp | Radiation sensitive resin composition, method for forming patterned insulative film, active matrix substrate and flat panel display device with active matrix substrate, and manufacturing method of flat panel display device |
JP2006313879A (en) * | 2005-04-04 | 2006-11-16 | Advanced Lcd Technologies Development Center Co Ltd | Thin film transistor, manufacturing method therefor, integrated circuit, and liquid crystal display |
JP2011209692A (en) * | 2010-03-11 | 2011-10-20 | Fujifilm Corp | Positive photosensitive resin composition, method for forming cured film, cured film, liquid crystal display device and organic el display device |
JP2011215226A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, blank for multi-level gradation photomask, and method for transferring pattern |
JP2012042837A (en) * | 2010-08-20 | 2012-03-01 | Fujifilm Corp | Positive photosensitive composition, method for forming cured film, cured film, liquid crystal display device and organic el display device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150316797A1 (en) * | 2013-09-24 | 2015-11-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mask and method of fabricating spacers |
US9395582B2 (en) * | 2013-09-24 | 2016-07-19 | Boe Technology Group Co., Ltd. | Mask and method of fabricating spacers |
JP2020140081A (en) * | 2019-02-28 | 2020-09-03 | 凸版印刷株式会社 | Half tone mask, and pattern formation method using the same |
JP7238469B2 (en) | 2019-02-28 | 2023-03-14 | 凸版印刷株式会社 | Pattern formation method using halftone mask |
WO2021192058A1 (en) * | 2020-03-24 | 2021-09-30 | 昭和電工マテリアルズ株式会社 | Photosensitive resin composition, photosensitive element, and method for producing wiring board |
WO2021193232A1 (en) * | 2020-03-24 | 2021-09-30 | 昭和電工マテリアルズ株式会社 | Photosensitive resin composition, photosensitive element, and method for producing wiring board |
Also Published As
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KR20150043452A (en) | 2015-04-22 |
JP5976831B2 (en) | 2016-08-24 |
CN104718498A (en) | 2015-06-17 |
CN104718498B (en) | 2019-12-17 |
TWI602022B (en) | 2017-10-11 |
TW201423274A (en) | 2014-06-16 |
JPWO2014061674A1 (en) | 2016-09-05 |
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