WO2014005331A1

WO2014005331A1 - Array substrate broken line repairing device and repairing method

Info

Publication number: WO2014005331A1
Application number: PCT/CN2012/078316
Authority: WO
Inventors: 郑文达
Original assignee: 深圳市华星光电技术有限公司
Priority date: 2012-07-03
Filing date: 2012-07-06
Publication date: 2014-01-09
Also published as: CN102759829A

Abstract

Provided are an array substrate (30) broken line repairing device (20) and repairing method, the broken line repairing device (20) comprising a repairing unit (21), and a heating unit (22); the repairing unit (21) forms a repaired line (40) at the broken line defect (32) of a conduction line (31) on the array substrate (30); and the heating unit (22) heats the repaired line (40), such that the molecules forming the repaired line (40) are sequentially arranged by a preset rule, thus achieving the repairing of relatively long broken line defects (32).

Description

Wire break repairing device and repairing method of array substrate

Technical field

The present invention relates to the field of liquid crystal display technology, and in particular, to a wire break repairing device and a repairing method for an array substrate.

Background technique

With the continuous development of liquid crystal display technology, high requirements for liquid crystal production efficiency are put forward. The liquid crystal display panel includes an array substrate and a color filter substrate, and the array substrate is provided with a large number of wires, such as data lines and scan lines.

During the process of fabricating the array substrate, there may be a disconnection defect of the data line or the scan line due to various factors. Referring to FIG. 1A, the wire 10 has a wire break defect 11 in FIG. 1A, resulting in the wire 10 It cannot be turned on, and thus the function of transmitting signals cannot be realized.

In the prior art, in order to repair the wire breakage defect 11 existing on the wire 10, the film is usually coated at the wire breakage defect 11 of the wire 10 by a wire break repairing machine, and the wire 12 is formed at the wire breakage defect to be turned on. The wire 10 is shown in Figure 1B.

However, after the patch 12 is formed by the wire break repairing machine, since the molecules of the surface of the patch wire 12 are not sequentially arranged, a lattice 15 composed of the molecules (a space grid in which molecules are arranged in the crystal) is arranged. The arrangement order is also confusing. Referring to FIG. 1C, the number of boundary lines 13 formed by the randomly arranged lattices 15 is too large, please refer to FIG. 1D; and after the coating forms the supplementary line 12, the compensation There is a crack 14 in the surface of the wire 12 such that the surface of the wire 12 is uneven, see Figure 1E. Both of the above cases lead to an increase in the impedance of the surface of the patch 12, resulting in an increase in the resistance of the patch 12, which in turn causes the conductive performance of the repaired conductor 10 to decrease, affecting the ability of the conductor 10 to transmit signals. Therefore, the existing wire break repairing machine and its repairing method can only repair the wire with the wire length of less than 100 micrometers. If the wire break length exceeds 100 micrometers, the array substrate will be regarded as a defective product and scrapped. , thereby affecting the manufacturing yield of the array substrate.

technical problem

An object of the present invention is to provide a wire break repairing device for an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and affects the wire transmission signal after the wire is formed by the wire on the wire defect of the prior art. The ability to influence the technical length of the patch length.

Technical solution

The invention constructs a wire break repairing device for an array substrate, which comprises:

a repairing unit; configured to form a repairing line at a wire breakage defect of the wire on the array substrate to turn on the wire;

a heating unit configured to generate a predetermined temperature on the surface of the repairing line to heat the repairing line formed by the repairing unit.

In an embodiment of the invention, the repairing unit specifically includes:

a clearing module; configured to remove a protective layer at both ends of the disconnection defect to expose both ends of the disconnection defect;

a plating line module; configured to form the repair line at the wire break defect by using a repair wire material to turn on the wire.

In an embodiment of the invention, the repairing wire material is hexahydroxychromium.

In an embodiment of the invention, the repairing wire material is hexahydroxy molybdenum.

In an embodiment of the invention, the repairing wire material is hexahydroxy tungsten.

In an embodiment of the invention, the heating unit is further configured to heat the repairing line formed by the repairing unit by using a laser beam heating method.

In an embodiment of the invention, the predetermined temperature is greater than a melting point of the repairing wire material and less than a boiling point of the repairing wire material.

Another object of the present invention is to provide a wire break repairing device for an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed at the wire defect of the wire in the prior art. The ability to influence the technical length of the patch length.

In order to solve the above technical problem, the present invention constructs a wire break repairing device for an array substrate, comprising:

a repairing unit; configured to form a repairing line at a wire breakage defect of the wire on the array substrate;

a heating unit; configured to heat the repair line formed by the repair unit.

In an embodiment of the invention, the repairing unit specifically includes:

In an embodiment of the present invention, the heating unit is further configured to generate a preset temperature on the surface of the repairing line, wherein the preset temperature is greater than a melting point of the repairing wire material and smaller than the repairing wire material. Boiling point.

Another object of the present invention is to provide a method for repairing a wire breakage of an array substrate, which solves the problem that the molecular arrangement of the wire surface is disordered and the wire transmission signal is affected after the wire is formed by the wire on the wire breakage defect in the prior art. The ability to influence the technical length of the patch length.

In order to solve the above technical problem, the present invention constructs a wire break repair method for an array substrate, the method comprising the following steps:

Forming a repair line at a wire breakage defect of the wire on the array substrate;

The formed repair line is heated.

In an embodiment of the invention, the step of forming a repairing line on the wire defect of the wire on the array substrate comprises:

Removing a protective layer at both ends of the wire breakage defect to expose both ends of the wire breakage defect;

The repair line is formed at the wire breakage by a repair wire material to turn on the wire.

In an embodiment of the invention, the repairing wire material is hexahydroxychromium, hexahydroxy molybdenum or hexahydroxy tungsten.

In an embodiment of the invention, the step of heating the formed repairing line comprises:

The formed repair line is heated by laser beam heating.

And generating a preset temperature on the surface of the repairing line; wherein the preset temperature is greater than a melting point of the repairing wire material and smaller than a boiling point of the repairing wire material.

Beneficial effect

Compared with the prior art, the present invention forms a repairing line at the wire breakage defect of the wire to turn on the wire, and heats the repairing wire at a high temperature, so that the molecules on the surface of the repairing wire are rearranged according to a preset rule. The number of grain boundaries on the surface of the repairing wire is reduced, so that the surface of the repairing wire is uniform, thereby reducing the resistance of the repairing wire, improving the ability of the wire to transmit signals, and realizing a long wire breakage defect. Patching.

DRAWINGS

1A and FIG. 1E are schematic structural diagrams of repairing a wire breakage defect of a wire in the prior art;

2 is a schematic structural view of a wire break repairing device of an array substrate according to the present invention;

3 is a schematic view of an array substrate with broken wires;

Figure 4 is a partial enlarged view of Figure 3;

FIG. 5 is a schematic view showing the repair of the disconnection line shown in FIG. 2 through the disconnection repairing device of the array substrate shown in FIG. 2; FIG.

Figure 6 is a schematic view showing the crystal lattice of the surface of the repairing line after heating the repairing line in the present invention;

Figure 7 is a schematic view showing the grain boundary of the surface of the repairing line after heating the repairing wire in the present invention;

Figure 8 is a schematic view showing the surface crack of the repairing line after heating the repairing line in the present invention;

FIG. 9 is a schematic flow chart of a method for repairing a wire breakage of an array substrate according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The following description of the various embodiments is provided to illustrate the specific embodiments of the invention. The directional terms mentioned in the present invention, such as "upper", "lower", "before", "after", "left", "right", "inside", "outside", "side", etc., are merely references. Attach the direction of the drawing. Therefore, the directional terminology used is for the purpose of illustration and understanding of the invention. In the figures, structurally similar elements are denoted by the same reference numerals.

Please refer to FIG. 2. FIG. 2 is a schematic structural view of a preferred embodiment of the wire break repairing device 20 of the array substrate of the present invention.

The wire break repairing device 20 of the array substrate is used for repairing a broken line in an array substrate, the wire break repairing device 20 of the array substrate includes a repairing unit 21 and a heating unit 22, and the repairing unit 21 specifically includes a clearing Module 211 and plating module 212.

Please refer to FIG. 3, FIG. 4 and FIG. 5 together. FIG. 3 is a schematic diagram of an array substrate with broken wires, FIG. 4 is a partially enlarged schematic view of the wire with wire breakage defects in FIG. 3, and FIG. The broken line is repaired by the wire break repairing device 20 of the array substrate shown in FIG. 2 .

In FIG. 3, a plurality of wires 31, such as a scan line 311 and a data line 312, are formed on the array substrate 30, and the scan lines 311 and the data lines 312 are vertically interlaced with each other, and a plurality of pixels 313 are staggered. The pixel 313 includes a pixel R, a pixel G, and a pixel B. A switching element 314 is disposed in the pixel 313, and the switching element 314 is, for example, a thin film field effect transistor (Thin Film Transistor (TFT), which includes a gate, a source, and a drain (not shown). The scan line 311 and the data line 312 generally cover the protective layer. After the array substrate 30 is formed, the array substrate 30 needs to be detected. When the wire 31 of the array substrate 30 is detected to have a wire breakage defect 32, the wire break repairing device of the array substrate provided by the present invention is provided. 20 to repair.

In FIG. 4, the wire breakage defect 32 divides the wire 31 into a first wire 33 and a second wire 34 that are disconnected from each other. In FIG. 5, the repairing unit 21 in the disconnecting repairing device 20 of the array substrate forms a repairing line 40, such that the first conductive line 33 and the second conductive line 34 are turned on, and the heating unit 22 is formed. The repair line 40 is heated at a high temperature.

Referring to FIG. 2, since the array substrate 30 is usually covered with a protective layer (not shown) on the wire 31 for protecting the wire 31, the present invention first clears the wire break defect by the cleaning module 211. 32 a protective layer at both ends to expose both ends of the disconnection defect 32. The cleaning module 211 may be a laser fusing device that uses a high-energy laser to fuse the protective layers at both ends of the disconnection defect 32.

After the cleaning module 211 clears the protective layer at both ends of the disconnection defect 32 and exposes both ends of the disconnection defect 32, the plating line module 212 forms a repair on the disconnection defect 32 by using a repairing wire material. The wire 40 connects the first wire 33 and the second wire 34 to turn on the wire 31.

The plating line module 212 may be an evaporation device, a sputtering device, or the like, and the repairing wire material may be hexahydroxychromium (Cr(CO)6), hexahydroxy molybdenum (Mo(CO)6), hexahydroxyl Tungsten (W(CO)6) or the like, this embodiment is described by taking only hexahydroxy tungsten as an example. Wherein the hexahydroxy tungsten has a boiling point T1 and a melting point T2, wherein the boiling point T1 is 175 degrees Celsius and the melting point T2 is 170 degrees Celsius.

After the repair line 40 is formed, the repair line 40 formed by the repair unit 21 is heated by the heating unit 22. The heating unit 22 in the present invention is preferably a laser heating device that uses a laser beam heating method to generate a high temperature by emitting a high-energy concentrated laser beam to heat the repair line 40 at a high temperature.

The temperature generated by the heating unit 22 on the surface of the repairing line 40 can reach a preset temperature T3, which is close to the melting point of the repairing line material and lower than the boiling point of the repairing line material, such as the preset temperature T3. It is larger than the melting point T2 of the repairing wire material and lower than the boiling point T1 of the repairing wire material. Taking the repairing wire material as hexahydro tungsten as an example, the preset temperature T3 is about 170 degrees Celsius and lower than 175 degrees Celsius, such as 165 degrees Celsius, 170 degrees Celsius, 173 degrees Celsius, etc., so that the surface of the repairing wire 40 can be melted and not volatilized. .

Wherein, under the heating of the preset temperature T3, the molecules constituting the repairing line 40 are sequentially arranged according to a preset rule, wherein the preset rule causes the molecules to be sequentially arranged in a certain direction. Please refer to FIG. 6. FIG. 6 is a schematic view showing the arrangement of the crystal lattice after heating, and the crystal lattices 41 composed of the molecules are also sequentially arranged according to a preset rule, so that the number of grain boundaries 42 on the surface of the repairing line 40 is conspicuous. For reduction, please refer to FIG. 7. FIG. 7 is a schematic diagram of the surface grain boundary of the repairing line 40 after being heated by the heating unit 22. In this way, the resistance of the surface of the repairing wire 40 can be greatly reduced, so that the signal can be smoothly transmitted, and the conductive property of the wire 30 is also improved.

Please refer to FIG. 8 , which is a schematic diagram of the surface crack of the repairing line 40 after the repairing line 40 is heated. After the heating line 22 is heated at a high temperature by the heating unit 22, the molecules on the surface of the repairing line 40 are sequentially arranged according to a preset rule, and the regularly moving molecules can fill the crack 43 on the surface of the repairing line 40. Making the surface of the repair line 40 relatively uniform (please refer to FIG. 1E) improves the problem that the surface crack 43 of the repair line 40 is large. In this way, the resistance of the surface of the repairing wire 40 can be greatly reduced, so that the signal can be smoothly transmitted, and the conductive property of the wire 30 is also improved.

In the wire break repairing device 20 of the present invention, the wire 31 having the wire breakage defect 32 is repaired by the repairing unit 21, the repairing wire 40 is formed at the wire breaking defect 32, and then the repairing wire 40 is heat-treated by the heating unit 22. The molecules constituting the repairing line 40 are sequentially arranged according to a preset rule, thereby reducing the number of grain boundaries on the surface of the repairing line 40, and making the surface of the repairing line 40 uniform, reducing the repairing line 40. The resistance increases the ability of the wire 31 to transmit signals.

Moreover, since the present invention can sequentially align the molecules on the surface of the repairing line 40 by high-temperature heating, the resistance of the repairing line is lowered, so that the present invention can repair some wires with long disconnection defects, for example, can repair more than 100. Micron (um) wire breakage defects.

FIG. 9 is a schematic flow chart of a preferred embodiment of a method for repairing a broken line of an array substrate according to the present invention.

In step S901, the protective layers at both ends of the disconnection defect 32 are removed to expose both ends of the disconnection defect 31. The wire breakage defect 32 is present on the wire 31, and the wire breakage defect 32 is present such that the wire 31 is divided into the first wire 33 and the second wire 34 which are disconnected from each other.

In a specific implementation process, the protective layer at both ends of the disconnection defect 32 can be removed by a laser fusing device that uses a high-energy laser to fuse the protective layers at both ends of the disconnection defect 31.

In step S902, the repairing line 40 is formed by using the repairing wire material to connect the first wire 33 and the second wire 34, thereby turning on the wire 31.

In a specific implementation process, the repair line 40 may be formed by evaporation, sputtering, or the like. The repair line material may be hexahydroxychromium (Cr(CO)6), hexahydromolybdenum (Mo(CO)6), hexahydroxy tungsten (W(CO)6), or the like. The repair line material has a boiling point T1 and a melting point T2. For example, hexahydrogen tungsten has a boiling point T1 of 175 degrees Celsius and a melting point T2 of 170 degrees Celsius.

In step S903, the repairing line 40 is heated so that the molecules constituting the repairing line 40 are sequentially arranged in accordance with a preset rule. In a specific implementation process, the repairing line 40 can be heated by a laser beam heating device, and the temperature generated by the laser beam heating device can reach a preset temperature T3, which is close to the melting point T2 of the repairing wire material and low. The boiling point T1 of the repairing wire material, such as the preset temperature T3, is greater than the melting point T2 of the repairing wire material and lower than the boiling point T1 of the repairing wire material. Taking the repairing wire material as hexahydro tungsten as an example, the preset temperature T3 is about 170 degrees Celsius and lower than 175 degrees Celsius, such as 165 degrees Celsius, 170 degrees Celsius, 173 degrees Celsius, etc., so that the repairing wire 40 can be melted and not volatilized.

For a detailed process of the method, please refer to the above detailed description of the wire break repairing device for the array substrate, and details are not described herein again. After the repair line is formed in the presence of the wire break defect, the repair line is heat-treated, so that the molecules constituting the repair line are sequentially arranged according to a preset rule, thereby reducing the number of grain boundaries on the surface of the repair line, and The surface of the repair line is uniform, reducing the resistance of the repair line and improving the ability of the wire to transmit signals. Moreover, the resistance of the repair line is reduced, so that some wires with longer breakage defects can be repaired, for example, wire break defects larger than 100 micrometers (um) can be repaired.

In the above, the present invention has been disclosed in the above preferred embodiments, but the preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various modifications without departing from the spirit and scope of the invention. The invention is modified and retouched, and the scope of the invention is defined by the scope defined by the claims.

Embodiments of the invention

Industrial applicability

Sequence table free content

Claims

A wire break repairing device for an array substrate, comprising:

a repairing unit; configured to form a repairing line at a wire breakage defect of the wire on the array substrate to turn on the wire;

a heating unit configured to generate a predetermined temperature on the surface of the repairing line to heat the repairing line formed by the repairing unit.
The wire break repairing device of the array substrate according to claim 1, wherein the repairing unit specifically comprises:

a clearing module; configured to remove a protective layer at both ends of the disconnection defect to expose both ends of the disconnection defect;

a plating line module; configured to form the repair line at the wire break defect by using a repair wire material to turn on the wire.
The wire break repairing device of the array substrate according to claim 2, wherein the repairing wire material is hexahydroxychromium.
The wire break repairing device of the array substrate according to claim 2, wherein the repairing wire material is hexahydroxy molybdenum.
The wire break repairing device of the array substrate according to claim 2, wherein the repairing wire material is hexahydroxy tungsten.
The disconnecting repairing device for an array substrate according to claim 1, wherein the heating unit is further configured to heat a repairing line formed by the repairing unit by a laser beam heating method.
The wire break repairing device of the array substrate according to claim 1, wherein the predetermined temperature is greater than a melting point of the repairing wire material and smaller than a boiling point of the repairing wire material.
A wire break repairing device for an array substrate, comprising:

a repairing unit; configured to form a repairing line at a wire breakage defect of the wire on the array substrate;

a heating unit; configured to heat the repair line formed by the repair unit.
The wire break repairing device of the array substrate according to claim 8, wherein the repairing unit specifically comprises:

a clearing module; configured to remove a protective layer at both ends of the disconnection defect to expose both ends of the disconnection defect;

a plating line module; configured to form the repair line at the wire break defect by using a repair wire material to turn on the wire.
The wire break repairing device of the array substrate according to claim 9, wherein the repairing wire material is hexahydroxychromium.
The wire break repairing device of the array substrate according to claim 9, wherein the repairing wire material is hexahydroxy molybdenum.
The wire break repairing device of the array substrate according to claim 9, wherein the repairing wire material is hexahydroxy tungsten.
The disconnecting repairing device for an array substrate according to claim 8, wherein the heating unit is further configured to heat a repairing line formed by the repairing unit by a laser beam heating method.
The wire break repairing device of the array substrate according to claim 8, wherein the heating unit is further configured to generate a preset temperature on the surface of the repairing wire, wherein the preset temperature is greater than a melting point of the repairing wire material It is smaller than the boiling point of the repairing wire material.
A method for repairing a wire breakage of an array substrate, wherein the method comprises the following steps:

Forming a repair line at a wire breakage defect of the wire on the array substrate;

The formed repair line is heated.
The method for repairing a wire breakage of an array substrate according to claim 15, wherein the step of forming a repair line at a wire breakage defect of the wire on the array substrate comprises:

Removing a protective layer at both ends of the wire breakage defect to expose both ends of the wire breakage defect;

The repair line is formed at the wire breakage by a repair wire material to turn on the wire.
The method of repairing a wire breakage of an array substrate according to claim 16, wherein the repairing wire material is hexahydroxychromium, hexahydroxymolybdenum or hexahydroxytungsten.
The method of repairing a wire breakage of an array substrate according to claim 15, wherein the step of heating the formed repair wire comprises:

The formed repair line is heated by laser beam heating.
The method of repairing a wire breakage of an array substrate according to claim 15, wherein the step of heating the formed repair wire comprises:

And generating a preset temperature on the surface of the repairing line; wherein the preset temperature is greater than a melting point of the repairing wire material and smaller than a boiling point of the repairing wire material.