WO2013124089A1

WO2013124089A1 - Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Info

Publication number: WO2013124089A1
Application number: PCT/EP2013/050586
Authority: WO
Inventors: Ralph Wagner
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2012-02-21
Filing date: 2013-01-14
Publication date: 2013-08-29
Also published as: DE102012101393A1

Abstract

In at least one embodiment of the optoelectronic semiconductor component (1), said component comprises a light-emitting diode chip (2) with a main radiation side (20) and a conversion element (3). The conversion element (3) is designed for conversion of primary radiation emitted by the light-emitting diode chip (2) into a secondary radiation different therefrom. A thickness and/or a material composition of the conversion element (3) is varied in a targeted manner across the main radiation side (20).

Description

description

Process for producing an optoelectronic

Semiconductor device and optoelectronic semiconductor device

An optoelectronic semiconductor component is specified. In addition, a method for producing an optoelectronic semiconductor device is specified. An object to be solved is to provide an optoelectronic semiconductor device in which a on a

Radiation main side generated by means of a conversion element color location is efficiently and selectively adjustable. This object is achieved, inter alia, by a method and by an optoelectronic semiconductor component with the

Characteristics of the independent claims solved. Preferred developments are specified in the dependent claims.

According to at least one embodiment, the

Optoelectronic semiconductor device one or more

LED chips on. The at least one light-emitting diode chip comprises a main radiation side. In particular, the

Radiation main side perpendicular to a growth direction of a semiconductor layer sequence of the LED chip

oriented. Preferably, the LED chip is to

set up to emit ultraviolet, visible and / or near-infrared light during operation. For example, the LED chip emits blue light, for example in the spectral range between 430 nm and 480 nm inclusive. In accordance with at least one embodiment, the semiconductor component comprises one or more conversion elements. The conversion element is a conversion of a

LED chip emitted during operation set up primary radiation in a different secondary radiation. The secondary radiation preferably has a greater wavelength than the primary radiation. The conversion element can have one or more different phosphors.

In accordance with at least one embodiment of the semiconductor component, the conversion element is at least or exclusively above the main radiation side of the light-emitting diode chip

applied. The conversion element can be applied directly to the main radiation side. It can do that

Conversion element touch the main radiation side.

In accordance with at least one embodiment of the semiconductor component, a thickness and / or a material composition of the conversion element is specifically varied over the main radiation side. In other words, that indicates

Conversion element in a direction perpendicular to and at various locations above the main radiation side,

different thicknesses and / or from each other

different material compositions.

In at least one embodiment of the optoelectronic semiconductor component, the latter comprises a light-emitting diode chip with a main radiation side and a conversion element. The conversion element is converted to from

LED chip emitted primary radiation in a different secondary radiation set up. A thickness and / or a material composition of the conversion element is varied over the main radiation side. In accordance with at least one embodiment of the semiconductor component, the light-emitting diode chip has a plurality of chip segments which can be controlled independently of one another. In which

LED chip can be a so-called multi-pixel chip. The chip segments can be monolithically integrated.

In particular, a multi-pixel chip means that the individual chip segments have an identical semiconductor layer sequence

have, within the manufacturing tolerances. The

individual chip segments are produced, for example, by attaching a single comparatively large LED chip to a carrier and then dividing it into the chip segments, for example by means of etching. After this

Singulated to the chip segments, the chip segments are no longer moved relative to the carrier on which the LED chip has been mounted. Likewise, the dividing into the chip segments on a growth substrate for the

Semiconductor layer sequence done and a bonding to the

Carrier takes place only after singling to the chip segments. The term multi-pixel chip thus preferably means that the individual chip segments of the light-emitting diode chip are no longer moved relative to each other after the epitaxial growth. A distance between adjacent chip segments may be between 1 ym and 50 ym or between

including 1 ym and 10 ym.

Monolithically integrated can mean that the

Semiconductor layer sequence over all chip segments one

at least in places continuous semiconductor layer sequence, in particular on an n-doped side of the

Semiconductor layer sequence. An active zone of the Light-emitting diode chips, which may be aligned parallel to the main radiation side, preferably does not extend continuously over the individual chip segments. In accordance with at least one embodiment of the semiconductor component, the conversion element is subdivided into subelements. The sub-elements are preferably arranged laterally next to one another. Lateral side by side means in particular along a direction parallel to the main radiation side. Adjacent sub-elements of the conversion element may touch or may be spaced apart.

In accordance with at least one embodiment of the semiconductor component, at least two chip segments with partial elements of the

Conversion element provided. The sub-elements differ in their thickness and / or their material composition from each other. By means of such chip segments and sub-elements, it is possible to produce a dense package of individually controllable pixels which emit different colors during operation.

Another way to achieve this is to use differently emitting single pixels

Assembling different LED chips with

produce different semiconductor layer sequences and / or with different converter layers. However, this leads to comparatively large distances between the individual pixels of typically more than 100 ym and is also expensive to manufacture.

Furthermore, multi-pixel chips can be produced by using a photo technique to emit differently colored semiconductor layer sequences at different Locating the LED chip are grown. However, this is associated with a very large effort. An individual color setting is with such

Procedure not possible.

Sticking on, for example, individual

Ceramic, for each of the pixels is due to a production-related bandwidth of the converter

Semiconductor chips and the ceramic plate and the small geometric dimensions associated with a large logistics effort and handling effort. These difficulties can be overcome by a semiconductor device described herein and by a method described herein.

In accordance with at least one embodiment of the semiconductor component, the light-emitting diode chip forms a single electrical one

controllable unit. In other words, that is

LED chip then not in chip segments, which are individually controlled, divided. Preferably, the

LED chip then a comparatively large

Radiation main page, for example, at least 0.75 mm x 0.75 mm or at least 1 mm x 1 mm or from

at least 1.4 mm x 1.4 mm. The main radiation side has, for example, seen in plan view, for example, a square or rectangular basic shape.

In accordance with at least one embodiment, this is

Conversion element or at least one of the sub-elements of the conversion element in the form of a symbol, pictogram or at least one character font structured seen in plan view of the main radiation side. It is possible that the conversion element or the relevant subelement is a positive or a negative of the character to be displayed. This makes it possible to emit a different color from the semiconductor component in a region adjacent to the conversion element or the subelement than in regions of the main radiation side which are covered by the conversion element or by the subelement. Thus, a character with the LED chip can be easily represented.

According to at least one embodiment of the semiconductor device, the conversion element covers at most 40% or at most 30% or at most 20% of the main radiation side. In other words, then a major part of the main radiation side is free of the conversion element.

According to at least one embodiment of the semiconductor device, the conversion element covers at least 90% or

at least 95% of the area of the main radiation side. In other words, then the main radiation side is in

essentially completely covered by the conversion element. In particular, the entire main radiation side, with

Exception of any connection areas such as bond pads covered by the conversion element.

According to at least one embodiment, the

Conversion element at least two of the sub-elements.

One or more first sub-elements form a positive of the character to be displayed. One or more second of the

Subelements then form a negative of the character to be displayed. The first and the second sub-elements are preferably arranged laterally next to one another and can touch or can be separated from one another.

According to at least one embodiment, the

Conversion element a plurality of laterally juxtaposed Sub-elements that differ in their material composition from each other. At least part of the

Partial elements is adapted to generate a radiation of a first wavelength and another part of the

Sub-elements is adapted to generate a different radiation. For example, a part of the sub-elements serves to generate white light together with the primary radiation emitted by the light-emitting diode chip. The other part of the sub-elements may be configured to generate, for example, red or red-white light.

According to at least one embodiment, this includes

Semiconductor device an imaging optics. The optics may be a lens or a lens system. An imaging optic by means of reflection can also be realized.

In accordance with at least one embodiment, the optics is configured to project the chip segments and / or the subelements of the conversion element and / or the character to be displayed, to which the conversion element or the subelements are shaped, onto a surface to be illuminated. The surface to be illuminated may be an area outside a portable device, such as a mobile phone, in which the semiconductor device is incorporated.

According to at least one embodiment, this includes

Conversion element several layers stacked one above the other. The layers follow in a direction perpendicular to the

Radiation main page in particular directly to each other. The neighboring layers can touch each other. A number of the stacked layers vary over the

Radiation main page away. In other words, it is not applied an equal number of layers all the main radiation side.

In accordance with at least one embodiment, the individual layers each have a thickness of between 1 μm and 20 μm or between 1 μm and 5 μm. The maximum number of layers applied over the main radiation side is preferably at least two or at least three or at least ten. Alternatively or additionally, the conversion element has at most 50 layers or at most 25 layers.

In accordance with at least one embodiment, all the layers, within the framework of the manufacturing tolerances, have the same

Material composition on. In particular, the layers each have the same phosphors in the same concentration or in the same concentration ratio. in this connection

emits the semiconductor device in operation especially

preferably over the entire main radiation side

Radiation with the same color location. The same color locale may mean that a local color location deviates from a mean of the color locus by at most 0.02 units or at most 0.01 units in the CIE standard color chart. By a different number of layers of the same

Material composition are especially in comparatively large LED chips manufacturing variations

Generating the semiconductor layer sequence or even in the generation of the conversion element compensated. In other words, the appropriate number of layers are applied locally to set a target color location of the emitted radiation. In accordance with at least one embodiment, this is

Conversion element or at least one subelement of the

Conversion element designed as an indicator. For example, the conversion element is then an indicator for ^■

ionizing radiation, temperature and / or

Ambient humidity. The conversion element and / or the semiconductor device is then set up, depending on one of the variables mentioned radiation of a certain

to emit spectral composition. For example, the semiconductor device emits blue light at low temperatures and red or redder light at higher temperatures. The conversion element can therefore

Thermochromfarben and / or Hydrochromfarben include.

In addition, a method for producing an optoelectronic semiconductor device is specified. Preferably, the method produces a semiconductor device as specified in connection with one or more of the above embodiments. Features of the method are therefore also disclosed for the semiconductor device and vice versa.

In at least one embodiment, the process comprises at least or only the following steps, preferably in the order given:

Providing one or more light-emitting diode chips with a main radiation side,

- Applying one or more conversion elements, which leads to a conversion of emitted by the LED chip

Primary radiation in one of these different

Secondary radiation are set up on the

Radiation main page, wherein the conversion element is applied in over the main radiation side of varying thickness and / or material composition. In accordance with at least one embodiment of the method, the application of at least one part of the conversion element comprises at least the following steps, for example in the order indicated:

Providing at least part of the

Conversion element, wherein the conversion element is mounted on a carrier main side of an intermediate carrier,

Arranging the part of the conversion element such that it faces the main radiation side and is at a distance from the main radiation side, and

- detachment of the part of the conversion element of the

Intermediate carrier and applying to the main radiation side by irradiation and heating of an absorber component of the conversion element and / or between the

Conversion element and the intermediate carrier located

Release layer with a pulsed laser radiation, which radiates through the intermediate carrier. In other words, the conversion element is removed in sections from the intermediate carrier by the pulsed laser radiation. The absorber component and / or the release layer are partly or completely converted into a gas phase. Due to the volume expansion associated with the transition from

Solid state is connected to the gas phase, the

corresponding part of the conversion element of the

Intermediate carrier accelerates towards the

Radiation main side. The detachment of the conversion element from the intermediate carrier is preferably not or not substantially gravitationally driven.

By such a method, a plurality of layers can be targeted and locally on the main radiation side position. It may be similar or different materials, in terms of their

Material composition and / or thickness, above the

Radiation main page are applied sequentially.

According to at least one embodiment of the method, at least a part of the conversion element is successively in a plurality of successive layers on the

Radiation main side of the LED chip applied. After the application of at least one of the layers, a color locus of the radiation emitted by the light-emitting diode chip together with the part of the conversion element already mounted on the light-emitting diode chip is determined. Depending on the determined color location, further layers of the conversion element are applied to the light-emitting diode chip. The color locus can be measured locally, so that different parts of the main radiation side can be assigned a different number of layers.

Likewise, a local color location measurement can also take place via a wafer with a multiplicity of light-emitting diode chips. About the locally different number of layers can then be the color of the emitted from the LED chips

Radiation can be regulated across the entire wafer. Such can occur across the wafer

production-related differences in the epitaxial

grown semiconductor layer sequence of the LED chips are compensated.

In accordance with at least one embodiment of the method, at least part of the conversion element is provided with a

Pick and place machine, English Pick and Place Machine, applied by pad printing or inkjet printing on the main radiation side. By such procedures can be comparatively large thicknesses of

Achieve conversion element efficiently.

It is possible that one of the methods mentioned in the preceding paragraph is combined with the laser lifting method by means of pulsed laser radiation from an intermediate carrier. For example, it is possible that a first, relatively thick and continuous layer with the

Automatic insertion machines, by means of pad printing or by means of

Inkjet printing is generated and that then a correction of the locally emitted color locations by means of

Laserabhebeverfahrens is achieved.

Hereinafter, an optoelectronic semiconductor device described herein and a method described herein with reference to the drawing with reference to

Embodiments explained in more detail. The same reference numerals indicate the same elements in the individual figures. However, there are no scale relationships shown, but individual elements can be shown exaggerated for better understanding.

FIGS. 1 to 5 and 7 to 9 are schematic illustrations of FIG

Embodiments of optoelectronic semiconductor devices described herein, and

Figure 6 is a schematic representation of a method for

Production of one described here

optoelectronic semiconductor device. FIG. 1A is a schematic sectional view of an exemplary embodiment of an optoelectronic device

Semiconductor device 1 shown. The semiconductor device 1 has a light-emitting diode chip 2 and a conversion element 3. The conversion element 3 is directly on a

Radiation main page 20 of the LED chip 2 attached. The main radiation side 20 may be provided with a roughening to improve a Lichtauskoppeleffizienz. The LED chip 2 comprises a chip substrate 27. On the chip substrate 27 are a plurality of chip segments 23a, 23b. The chip segments 23a, 23b are identically composed, within the manufacturing tolerances, and originate from the same grown epitaxial layer sequence. A distance between the chip segments 23a, 23b is a few ym. The individual chip segments 23a, 23b emit during operation of the

Semiconductor device 1, a primary radiation of approximately the same wavelength, preferably in each case blue light. From the chip substrate 27 forth is an active zone 25,

symbolized by a dash line, by electric

Leads 28a, 28b penetrated. Together with the common electrical line 28, the chip segments 23a, 23b are independently electrically controllable individually. For ease of illustration electrical insulation between the electrical lines 28, 28a, 28b are not shown and for simplification only a single electrical line 28a, 28b is shown for each of the chip segments 23a, 23b. For example, the LED chip 2 is constructed, as indicated in the document US 2011/0101390 AI, the disclosure of which is incorporated by reference. The conversion element 3 is divided into a plurality of sub-elements 32a, 32b. The sub-elements 32a, 32b are arranged separated from each other according to Figure 1A. Notwithstanding Figure 1A, the sub-elements 32a, 32b may touch and extend over side surfaces of the chip segments 23a, 23b.

FIGS. 1B to 1G show schematic plan views of the main radiation sides 20 of exemplary embodiments of the semiconductor components 1. In these figures, the individual sub-elements of the conversion element 3 by

Letters symbolize. R stands for a red

emitting subelement, B for a blue emitting, G for a green emitting subelement and P for a white light emitting subelement. The with R, G, B, P

designated sub-elements have mutually different material compositions, in particular with regard to their phosphors on. It is possible that the blue

emitting partial elements B are omitted if the LED chip 2 already emits blue light of the desired color during operation.

According to FIGS. 1B and 1C, the semiconductor component 1 has 3 × 3 subelements. In Figure 1B, the sub-elements R, B, G are arranged in strips. According to Figure IC, the sub-elements R, B, G are mixed in color on the

Radiation main page 20 arranged.

In the schematic representations according to FIGS. 1D and IE, the semiconductor components 1 each have a larger number of the subelements R, B, G. According to FIG. 1D, the subelements R, B, G are sorted by color along

Strip parallel to edges of the semiconductor device 1 arranged. The arrangement of the sub-elements R, B, G in Figure IE is done diagonally with respect to the emission colors.

According to FIGS. 1B to IE, only three are each

different sub-elements R, B, G shown. Notwithstanding this, it is also possible for more than three sub-elements emitting different colors to be present. For example, through

mutually different, laterally adjacent sub-elements a nearly continuous color gradient

be realized. It can then at least two or

at least four in different shades of the same

Basic color emitting sub-elements, for example, several in different shades of green emitting sub-elements, be present.

In the exemplary embodiment according to FIG. 1F, instead of a multi-pixel chip, as illustrated in FIG. 1A, a light-emitting diode chip 2 with a single, coherent semiconductor layer sequence may also be used. The single ones

Sub-elements P preferably have the same

Material composition and are adapted to produce white light. In particular, the sub-elements P differ only in their thickness. As a result, it can be achieved that white light of the same color locus is emitted over the entire main radiation side 20.

In the embodiment according to FIG IG are at the

Radiation main page 20 a plurality of sub-elements P are mounted, which emit white light, and a plurality of sub-elements R, which generate white light with a higher proportion of red. The individual sub-elements R, P can be separated electrically

be assigned to controllable chip segments or on a single, large main radiation side of a non-segmented LED chip.

By such an arrangement of the sub-elements P, R is

For example, a flash for about the camera of a mobile phone achievable. Due to the higher proportion of red

especially in a center of the picture or in an upper area on face height, effects such as a livelier and / or fresher facial color when photographing can be achieved.

Likewise, headlights in the automotive sector can be realized in this way. For example, a subregion of the main radiation side then emits a lower proportion of blue and is less dazzling. Also special lights as technically easy to implement customization, in particular

different blue lights for different

Sales markets or as a value feature for different model series, this can be easily produced. A manufacturer-specific color temperature distribution in the light image about a brand recognition is possible.

Further, semiconductor devices 1 which are constructed as a multi-pixel ^¬ semiconductor components and / or as a high-voltage semiconductor devices, in lamps with

changeable color temperature can be installed. For example, then some separately controllable pixels, in addition to a white light-generating converter, a red or yellow or orange amplified emitting converter. To the

By way of example, the semiconductor components 1 can be provided with a controllable resistance, with which the color temperature and / or a total brightness can be adjusted. This is also a monochrome multi-pixel chips color temperature adjustment possible by a user. Likewise in lamp production, a color temperature is individually adaptable.

In the exemplary embodiment according to FIG. 2, unlike in accordance with FIG. 1A, the main radiation side 20 is not completely covered by the conversion element 3. On the main radiation side 20 are provided bonding pads for connecting the electrical leads 28, which are shaped as bonding wires.

The semiconductor layer sequence of the LED chip 2

extends, as shown in Figure 2, over all

Chip segments 23a, 23b. The individual chip segments 23a, 23b are separated from one another by trenches which extend through the active zone 25.

FIG. 3 illustrates that over the

Radiation main page 20 of the LED chip 2 a plurality of layers 35 of the conversion element 3 are applied. Thicknesses T35 of the layers 35 are in the range less ym. A total thickness T3 of the conversion element 3 results from the sum of

Thicknesses T35 of the layers 35. The layers 35 extend essentially completely over the main radiation side 20.

According to FIG. 4, the layers 35, which are stacked one above the other, are subdivided along a lateral direction. The layers 35 in this case do not substantially overlap laterally. The semiconductor chip 2 may be a multi-pixel chip, as in connection with FIGS. 1A or 2

illustrated. It is also possible that the LED chip 2 forms a single electrically controllable unit and is unsegmented. Also in the embodiments according to the figures 1B to IG and according to the figures 3 and 5 to 9 it can each about a multi-pixel chip or one

act unsegmented single chip.

The LED chip 2 is applied to a carrier substrate 8, which may comprise not shown conductor tracks. Deviating from the representation can on the

Support substrate 8 may also be mounted more of the LED chips 2. In the exemplary embodiment according to FIG. 5, the layers 35 have a lateral overlap. As a result, a complete coverage of the main radiation side 20 can be achieved.

FIG. 6 shows an exemplary embodiment of a method for producing the semiconductor component 1 in schematic form

Sectional views shown. The process can be carried out as indicated in document DE 10 2010 044 985 A1, the disclosure of which is incorporated by reference. On a carrier top 40 of an intermediate carrier 4, a release layer 5 is attached. The release layer 5 is

formed for example by ZnO. With a pulsed

Laser beam 6, the release layer 5 is completely or partially evaporated, so that a gaseous release material 56 is formed. By this volume expansion is the

Conversion element 3 detached from an originally contiguous layer 3 'of a raw material and to the

Radiation main page 20 accelerates towards. lateral

Dimensions of individual parts of the conversion element 3 are smaller than lateral dimensions of the LED chip 2.

A distance D between the layer 3 'and the

Radiation main page 20 is for example between including 5 ym and 50 ym. A gap between the layer 3 'and the main radiation side 20 may be evacuated or a gas pressure may be reduced. As a result, influences on the parts of the conversion element 3 separated out of the layer 3 'due to air resistance can be reduced or avoided. The from the layer 3 '

separated parts are here, seen in plan view, for example, square, rectangular, hexagonal or linear shaped.

A lateral extent of the laser radiation 6 and thus of the parts of the conversion element 3 is, for example, between 5 μm and 200 μm, preferably between

including 15 ym and 100 ym. The lateral extent of the laser radiation 6 can also be adapted to a width of the chip segments, cf. for example FIGS. 1A and 4, and correspond to the lateral dimensions of the semiconductor chip 2, for example with a tolerance of at most 20% or at most 10%.

Notwithstanding the illustration according to FIG. 6, it is also possible for the release material 56 not to be applied in the separate release layer 5, but to be added to the layer 3 '. The release material 56 is preferably permeable to the radiation generated later by the semiconductor chip 2.

In Figure 6B it can be seen how the individual parts of the

Conversion element 3 are applied to the main radiation side 20. The resulting semiconductor device 1 is shown in FIG. 6C.

Between the application of successive layers, it is possible to electrically operate the semiconductor chip 2 and by adjusting the number of layers that are applied locally on the main radiation side 20 to set a color location of the emitted radiation targeted. Optionally, the raw material for the conversion element 3, such as a silicone, is only incompletely crosslinked and / or incompletely cured in the layer 3 '. In other words, a hardness of the raw material on the carrier 4 can be increased, for example, by exposure or heat. One

Complete curing and / or crosslinking of the raw material preferably takes place only after application to the

LED chip 2. Because the raw material only

incompletely crosslinked and / or cured on the

LED chip 2 is applied, is a mechanically reliable connection of the conversion element 3 with the LED chip 2 and the layers 35 with each other

reachable .

FIGS. 7 and 8 show exemplary embodiments of the invention

Semiconductor device 1 shown, in which the LED chip 2 is preferably unsegmented. According to FIG. 7, this is

Conversion element 3 to a character, see the

schematic top views of the main radiation side 20 in Figures 8B and 8C, structured. The

Radiation main face 20 is only partially of the

Conversion element 3 covered. As a result, a static color distribution as a fixed pattern, for example, to recognize a company logo or a symbol for

Display in a mobile phone on a support surface next to the mobile phone, feasible. For example, can be easily displayed with such a semiconductor device 1, whether a message is stored on the mobile phone. According to FIG. 8A, the laterally adjacent ones touch each other

Subelements 32a, 32b. The subelement 32a is structured as a positive to the symbol to be displayed and the subelement 32b as a negative.

In FIG. 9, the semiconductor component 1 additionally has an imaging optical system 9. Such an optic 9 may also be present in all other embodiments. With the optics 9 is about the symbol, cf. Figures 8B and 8C representable.

According to FIG. 9, thicknesses of the partial elements 32a, 32b are deliberately set differently from one another. It can be the

Sub-elements 32a, 32b have a same material composition. For example, such a semiconductor device 1 can be realized as shown in connection with FIG.

As in all other embodiments, it is possible that the conversion element 3 or one of the

Sub-elements 32a, 32b an indicator function, such as for

Temperature, ambient humidity and / or ionizing

Radiation, has. This is preferably the

Conversion element 3 in contact with a the

Semiconductor device 1 surrounding atmosphere. Of the

LED chip 2 is then preferably encapsulated. Such

Encapsulations are not shown in the figures.

The invention described here is not by the

Description limited to the embodiments.

Rather, the invention encompasses every new feature as well as every new combination of features, in particular each

Combination of features in the claims, even if this feature or this combination itself is not is explicitly stated in the claims or exemplary embodiments.

This patent application claims the priority of German Patent Application 10 2012 101 393.4, the disclosure of which is hereby incorporated by reference.

Claims

claims

1. A method for producing an optoelectronic

Semiconductor component (1) with the steps:

- Providing a light-emitting diode chip (2) with a

Radiation main side (20),

- Applying a conversion element (3), which leads to a conversion of the LED chip (2)

emitted primary radiation in one of these

different secondary radiation is set up on the main radiation side (20),

wherein the conversion element (3) is applied with a thickness and / or material composition varying over the main radiation side (20). 2. Method according to the preceding claim,

in which

- The light-emitting diode chip (2) is divided into a plurality of electrically independently controllable and monolithically integrated chip segments (23) and the conversion element (3) is divided into sub-elements (32),

- At least two of the chip segments (23) with

Partial elements (32) are provided, which differ in their thickness and / or material composition from each other,

- The conversion element (3) at least 90% of

Radiation main side (20) covered,

- The conversion element (3) has a plurality of stacked layers (35) and a number of stacked layers on the

Radiation main page (20) away varies. Method according to one of the preceding claims, in which the application of at least a part of the

Conversion element (3) comprises the following steps:

Providing at least part of the

Conversion element (3), wherein the conversion element (3) in a layer (3 ') on a support main side (40) of an intermediate carrier (4) is mounted,

Arranging the part of the conversion element (3) such that it faces the main radiation side (20) and has a distance (D) from the main radiation side (20), and

Detaching the part of the conversion element (3) from the intermediate carrier (4) and applying it to the

Radiation main side (20) by means of irradiation and

Heating an absorber component (36) of the

Conversion element (3) and / or a between the conversion element (3) and the intermediate carrier (4) located release layer (5) with a pulsed laser radiation (6), the intermediate carrier (4)

irradiated,

wherein the light-emitting diode chip (2) is a multipixel chip having a plurality of chip segments (23) which can be driven independently of one another and are monolithically integrated.

Method according to one of the preceding claims, wherein at least part of the conversion element (3) successively in a plurality of successive layers (35) on the main radiation side (20) of the

LED chips (2) is applied,

wherein, after the application of at least one of the layers (35), a color location of the light-emitting diode chip (2) together with that already on the light-emitting diode chip (2) applied part of the conversion element (3)

emitted radiation is determined and, depending on the color location, further layers (35) of the conversion element (3) are applied to the light-emitting diode chip (2).

Method according to one of the preceding claims, wherein at least a part of the conversion element (3) with a pick and place machine, by pad printing or by ink jet printing on the

Radiation main side (20) is applied.

Optoelectronic semiconductor device (1) with

- A LED chip (2), the one

Radiation main page (20), and

- A conversion element (3), which is a conversion of the LED chip (2) emitted

Primary radiation in one of these different

Secondary radiation is set up,

wherein the conversion element (3) varies in thickness and / or material composition across the main radiation side (20).

Optoelectronic semiconductor component (1) according to the preceding claim,

in which the light-emitting diode chip (2) is subdivided into a plurality of chip segments (23) which can be driven independently of one another and are monolithically integrated, and the conversion element (3) is subdivided into subelements (32),

wherein at least two of the chip segments (23) with

Sub-elements (32) are provided, which differ in their thickness and / or material composition from each other. Optoelectronic semiconductor component (1) according to Claim 6,

in which the LED chip (2) a single

electrically controllable unit,

wherein the conversion element (3) has the shape of a

Symbol, a pictogram or at least one

Has font character.

Optoelectronic semiconductor component (1) according to the preceding claim,

in which the conversion element (3) covers at most 40% of the main radiation side (30).

Optoelectronic semiconductor component (1) according to claim 8,

in which the conversion element (3) covers at least 90% of the main radiation side (30),

wherein the conversion element (3) at least two

Partial elements (32a, 32b) and one of

Sub-elements (32 a) the symbol, the icon or the character forms and another of the sub-elements (32 b) a negative thereto, and

wherein the sub-elements (32a, 32b) are arranged laterally side by side.

Optoelectronic semiconductor component (1) according to Claim 6,

in which the LED chip (2) a single

electrically controllable unit is and that

Conversion element (3) at least 90% of

Radiation main side (30) covered,

wherein the conversion element (3) laterally juxtaposed sub-elements (32), which differ in their material composition from each other and for the emission of radiation from each other

different color locations are set up.

12. Optoelectronic semiconductor component (1) according to one of claims 7 to 11,

further comprising an imaging optic (9),

wherein the optic (9) is adapted to the

Chip segments (23) and / or the sub-elements (32) and / or to project the symbol, pictogram or character on a surface to be illuminated. 13. Optoelectronic semiconductor component (1) according to claim

6

in which the LED chip (2) is unsegmented and a single electrically controllable unit and the conversion element (3) at least 90% of

Radiation main side (20) covered,

wherein the conversion element (3) has a plurality of layers (35) stacked one above the other and a number of the layers stacked on top of each other

Radiation main page (20) away varies. 14. Optoelectronic semiconductor device (1) according to the

previous claim,

in which each of the layers (35) is the same

Having material composition and radiation is emitted over the entire main radiation side (20) in operation with the same color location,

wherein the thickness of the conversion element (3) varies across the main radiation side (20).

15. Optoelectronic semiconductor component (1) according to one of claims 6 to 14,

in which at least part of the conversion element (3) an indicator of one or more of the parameters ionizing radiation, temperature as well

Ambient humidity is,

wherein the conversion element (3) is set up so that, depending on the parameter, a spectral composition of the radiation generated by the conversion element (3) changes.