WO2013109583A3 - Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts - Google Patents
Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts Download PDFInfo
- Publication number
- WO2013109583A3 WO2013109583A3 PCT/US2013/021669 US2013021669W WO2013109583A3 WO 2013109583 A3 WO2013109583 A3 WO 2013109583A3 US 2013021669 W US2013021669 W US 2013021669W WO 2013109583 A3 WO2013109583 A3 WO 2013109583A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- back surface
- sinx
- vias
- passivated
- conductor paste
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052782 aluminium Inorganic materials 0.000 title abstract 3
- 229910004205 SiNX Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000009472 formulation Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000000608 laser ablation Methods 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
- -1 α-Si Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Dispersion Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
This invention relates an aluminum (Al) conductor paste formulation and its method of application on rear side passivated locally laser fired contacts (LFC). Such Back Surface Passivated (BSP) Si-solar cells include aluminum conductor paste formulations and methods of application on rear side passivated locally opened vias; dot or line geometry or combination thereof employing laser ablation or chemical etching methods. Such Back Surface Passivated Si- solar cells include dielectric layers of A1203, SiNx, Si02, SiC, α-Si, Si02/SiNx, A1203/SiNx, SiO2A12/SiNx. The Al-conductor paste of this invention achieves; (i) non-degradation of passivation stack, (ii) defect free surfaces and void free vias, (iii) a strong and uniform Back Surface Field (BSF) layer within dot vias and line vias.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261587107P | 2012-01-16 | 2012-01-16 | |
US61/587,107 | 2012-01-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2013109583A2 WO2013109583A2 (en) | 2013-07-25 |
WO2013109583A3 true WO2013109583A3 (en) | 2013-09-19 |
Family
ID=48799802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2013/021669 WO2013109583A2 (en) | 2012-01-16 | 2013-01-16 | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2013109583A2 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105684097B (en) * | 2013-10-28 | 2019-01-11 | 福禄公司 | Dielectric paste for aluminum substrate |
CN106537516A (en) * | 2014-07-21 | 2017-03-22 | 太阳化学公司 | A silver paste containing organobismuth compounds and its use in solar cells |
CN104692668B (en) * | 2015-02-11 | 2017-04-12 | 西北大学 | Rapid crystallization glass powder for positive electrode paste of solar cell |
WO2016193209A1 (en) * | 2015-06-02 | 2016-12-08 | Basf Se | Conductive paste and process for forming an electrode on a p-type emitter on an n-type base semiconductor substrate |
CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
WO2017100516A1 (en) * | 2015-12-10 | 2017-06-15 | Sun Chemical Corporation | Silver conductive paste composition |
CN105837027B (en) * | 2016-03-28 | 2018-07-06 | 湖南兴龙环境艺术工程有限公司 | A kind of surface is covered with the preparation process of the tempered glass of copper-based composite coating |
DE102016107802A1 (en) * | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Process for the preparation of back-contacted solar cells made of crystalline silicon |
CN106098146A (en) * | 2016-07-08 | 2016-11-09 | 南通天盛新能源股份有限公司 | High-efficiency crystal silicon solar battery local back field aluminum paste and the application in PERC battery |
JP6885188B2 (en) * | 2017-04-28 | 2021-06-09 | 住友金属鉱山株式会社 | Method for manufacturing conductive composition and terminal electrode |
WO2019183932A1 (en) * | 2018-03-30 | 2019-10-03 | 深圳市首骋新材料科技有限公司 | Front side conductive paste of crystalline silicon solar cell, preparation method therefor, and solar cell |
CN110112242A (en) * | 2019-05-10 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | A kind of solar battery and a kind of preparation method of solar battery |
CN110690296A (en) * | 2019-10-12 | 2020-01-14 | 通威太阳能(眉山)有限公司 | Efficient back passivation crystalline silicon solar cell and preparation method thereof |
CN114883026B (en) * | 2022-01-18 | 2024-02-02 | 湖南利德电子浆料股份有限公司 | Aluminum paste special for double-sided back passivation crystalline silicon solar cell and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060289055A1 (en) * | 2005-06-03 | 2006-12-28 | Ferro Corporation | Lead free solar cell contacts |
RU2303831C2 (en) * | 2004-06-21 | 2007-07-27 | Открытое Акционерное Общество "Завод электронных материалов и приборов "Аналог" | Aluminum active material for silicon solar cells |
US20070215202A1 (en) * | 2006-03-20 | 2007-09-20 | Ferro Corporation | Aluminum-boron solar cell contacts |
WO2009032429A1 (en) * | 2007-08-29 | 2009-03-12 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
US20090239331A1 (en) * | 2008-03-24 | 2009-09-24 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
-
2013
- 2013-01-16 WO PCT/US2013/021669 patent/WO2013109583A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2303831C2 (en) * | 2004-06-21 | 2007-07-27 | Открытое Акционерное Общество "Завод электронных материалов и приборов "Аналог" | Aluminum active material for silicon solar cells |
US20060289055A1 (en) * | 2005-06-03 | 2006-12-28 | Ferro Corporation | Lead free solar cell contacts |
US20070215202A1 (en) * | 2006-03-20 | 2007-09-20 | Ferro Corporation | Aluminum-boron solar cell contacts |
WO2009032429A1 (en) * | 2007-08-29 | 2009-03-12 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
US20090239331A1 (en) * | 2008-03-24 | 2009-09-24 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
Also Published As
Publication number | Publication date |
---|---|
WO2013109583A2 (en) | 2013-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013109583A3 (en) | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts | |
WO2008093110A3 (en) | Method of preparing a primary electrode array for photovoltaic electrochemical cell arrays | |
WO2009128678A3 (en) | Solar cell and method of manufacturing the same | |
WO2013023169A8 (en) | Aluminium paste with no or poor fire -through capability and use thereof for back electrodes of passivated emitter and rear contact silicon solar cells | |
EP3231017B1 (en) | Laser stop layer for foil-based metallization of solar cells | |
WO2009102617A3 (en) | Device having power generating black mask and method of fabricating the same | |
WO2010025696A3 (en) | Method for producing an organic radiation-emitting component and organic radiation-emitting component | |
WO2010151857A3 (en) | Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation | |
WO2008019073A3 (en) | System and method for creating electric isolation between layers for photovoltaic applications | |
KR20160139008A (en) | Metallization of solar cells | |
WO2011124409A3 (en) | Method for producing a solar cell | |
WO2011025631A3 (en) | Semiconductor crystal based radiation detector and method of producing the same | |
EP2615613A3 (en) | A solar cell back side electrode | |
WO2009008945A3 (en) | Method for cleaning a solar cell surface opening made with a solar etch paste | |
EP2172978A3 (en) | Structure of solar cell panel and manufacturing method of electrode of solar cell panel | |
WO2009140939A3 (en) | Optoelectronic semiconductor chip comprising a reflective layer | |
WO2009025502A3 (en) | Solar cell having porous structure and method for fabrication thereof | |
EP2626914A3 (en) | Solar Cell and Method of Manufacturing the Same | |
WO2009090098A3 (en) | Method and apparatus for producing a solar cell | |
WO2009152238A3 (en) | A process of forming a silicon solar cell | |
TWI257125B (en) | A method for preventing metal line bridging in a semiconductor device | |
WO2011131388A3 (en) | Method for producing a solar cell and solar cell produced according to this method | |
EP1873790A4 (en) | Paste composition, electrode and solar cell device comprising same | |
US20120181668A1 (en) | Ink jet printable etching inks and associated process | |
WO2012136387A3 (en) | Printable medium that contains metal particles and effects etching, more particularly for making contact with silicon during the production of a solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13739033 Country of ref document: EP Kind code of ref document: A2 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13739033 Country of ref document: EP Kind code of ref document: A2 |