WO2012046977A2

WO2012046977A2 - Target structure used in charged particle beam generation, a production method therefor, and a medical device using the same

Info

Publication number: WO2012046977A2
Application number: PCT/KR2011/007258
Authority: WO
Inventors: 조성목; 정문연; 김승환
Original assignee: 한국전자통신연구원
Priority date: 2010-10-06
Filing date: 2011-09-30
Publication date: 2012-04-12
Also published as: WO2012046977A3

Abstract

Provided are a target structure used in charged particle beam generation, a production method therefor, and a medical device using the same. The target structure comprises: a target layer; and a support having through holes that are used as passageways for the progress of a laser beam or a charged particle beam.

Description

Target structure used for generating charged particle beam, manufacturing method thereof and medical apparatus using the same

The present invention relates to a target structure used for generating charged particle beams, a method of manufacturing the same, and a medical apparatus using the same.

The treatment method using the charged particle beam is attracting attention as a prognosis treatment because it can accurately attack cancer cells while minimizing damage to normal tissues. Conventionally, in order to generate charged particle beams, not only huge but expensive accelerators and gantry have been required. However, recently, since a method of generating a charged particle beam using a high power pulsed laser has been proposed, it is expected that the size and cost of the treatment device can be greatly reduced.

In order for this therapy to be practically producted, the energy of the charged particle beam must be large enough and its energy distribution must be small enough. These requirements related to the energy and energy distribution of the charged particle beam are easier to meet as the thickness of the target layer irradiated by the laser becomes thinner. In particular, the generation of charged particles using the Radiation Pressure Acceleration (RPA) mechanism requires a thin target layer of less than 1 micrometer. However, when the thickness of the target layer becomes thin, not only the difficulty in handling the target layer increases but also it is difficult to accurately control the position of the target layer.

One object of the present invention is to provide a target structure that can improve the structural stability of the thin target layer.

One technical problem to be achieved by the present invention is to provide a method for stably manufacturing a target structure having a thin target layer.

One technical problem to be achieved by the present invention is to provide a medical device using a charged particle beam generated from a thin target layer.

The present invention provides a target structure in which a target layer is formed on a support. The target structure may include a support having a target layer having a first surface irradiated by a laser beam and a second surface on which the charged particle beam is emitted, and a through hole used as a traveling path of the laser beam or the charged particle beam. have.

In some embodiments, the support may be attached to the first surface of the target layer, and the through hole may be used as a propagation path of the laser beam. In example embodiments, the support may be attached to the second surface of the target layer, and the through hole may be used as a propagation path of the charged particle beam.

In some embodiments, the target layer is formed to a thickness of 0.001um to 10um, and the support includes at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials or metal materials, It may be formed in a thickness.

According to another embodiment, the support may include a material of a single crystal structure, and the surface of the support in contact with the target layer may have a (100) plane (a plane (100)). In this case, the through hole may include a region having a width that increases with distance from the target layer.

According to some embodiments, the target layer may include at least one of the inert metal materials.

According to other embodiments, it may further include an intermediate layer interposed between the target layer and the support. In this case, the intermediate layer may have an intermediate through hole exposing the target layer, and the intermediate through hole may be aligned with the through hole of the support. In addition, the target layer may include inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist or hydrogenated metals. It may include at least one of hydrogenated amorphous silicon (hydrogenated amorphous silicon).

In example embodiments, the target layer may include a first target layer and a second target layer formed of different materials. The first target layer may constitute the first surface irradiated by a laser beam, and the second target layer may constitute the second surface on which the charged particle beam is emitted. In this case, the second target layer may constitute a plurality of spaced apart emission patterns formed on the surface of the first target layer, and each of the emission patterns may have a smaller width than the through hole. In addition, the first target layer is formed of at least one of the metal materials, the second target layer is polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide (Polyimide), Photoresist or hydrogenated amorphous silicon It may be formed of at least one of.

The present invention provides a medical device using a target layer formed on a support for generating charged particle beams. The medical device may include a target structure, a light source for irradiating a laser beam to the target structure, and a guiding structure for guiding a charged particle beam emitted from the target structure to a biological object. In this case, the target structure includes a target layer formed on a support, and the support includes a through hole used as a path of travel of the laser beam or the charged particle beam.

According to some embodiments, the target layer is Inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist or hydrogenated amorphous silicon amorphous silicon).

In some embodiments, an intermediate layer may be further interposed between the target layer and the support. The intermediate layer may have an intermediate through hole exposing the target layer, and the intermediate through hole may be aligned with the through hole of the support.

In example embodiments, the target layer may include a first target layer to which the laser beam is irradiated and a plurality of emission patterns spaced apart from each other formed on a surface of the first target layer. Each of the emission patterns may have a width smaller than that of the through hole of the support.

In example embodiments, the first target layer is formed of at least one of metal materials, and the emission patterns are formed of polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and polyimide ( Polyimide, Photoresist or Hydrogenated Amorphous Silicon It may be formed of at least one of.

According to some embodiments, the light source may be configured to irradiate the target layer with a laser beam having an intensity of at least 10 ¹⁸ W / cm ² .

According to some embodiments, the guiding structure may include an accelerator for accelerating the charged particle beam.

The present invention provides a method for producing a target structure comprising forming a target layer on a support. This method forms a target layer having a thickness of 0.001um to 10um on the upper surface of the support, forms a mask pattern exposing a portion of the lower surface of the support on the lower surface of the support, and then Forming a through hole exposing the target layer by patterning the support using an etch mask.

According to some embodiments, the support is a silicon wafer having a bottom surface of a (100) plane, and the forming of the through hole is an exposed bottom of the support using an etch recipe having an etch selectivity with respect to the target layer. And wet etching the noodles. In addition, the wet etching may be performed using at least one of tetramethylammonium hydroxide (TMAH), ethylene diamine pyrocatechol (EDP), or KOH as an etchant. According to these embodiments, the target layer may include at least one of the inert metals.

In example embodiments, the etch stop layer may be further formed before the target layer is formed. In this case, the forming of the through hole may be performed by etching the support using an etching recipe having an etching selectivity with respect to the etching stop layer, and then using the etching recipe having an etching selectivity with respect to the target layer. It may include the step of etching. According to these embodiments, the target layer may include inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist ( Photo resist) or hydrogenated amorphous silicon.

The forming of the target layer may include forming a metal layer formed of at least one of metal materials, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and polyimide. Photoresist or hydrogenated amorphous silicon And forming emission patterns formed in at least one of the two. In example embodiments, the emission patterns may be formed on the metal layer after forming the metal layer, and the through hole may be formed to expose a bottom surface of the metal layer. In example embodiments, the emission patterns may be formed on the support before forming the metal layer, and the through holes may be formed to expose bottom surfaces of the emission patterns.

According to embodiments of the present invention, the target layer is formed on a support thicker than the target layer, and the support is formed to have a through hole exposing the target layer. Since it is structurally supported by the support, even if the target layer is formed to a very thin thickness, the target structure according to the present invention can have structural stability.

In some embodiments, an etch stop layer may be interposed between the target layer and the support. In this case, technical limitations in the material and / or thin film structure of the target layer may be alleviated because technical problems of etching damage during the formation of the through hole may be prevented.

1, 3 and 5 are perspective views illustrating a method of manufacturing a target structure according to the first embodiment of the present invention.

2, 4 and 6 are cross-sectional views illustrating a method of manufacturing the target structure according to the first embodiment of the present invention.

7, 9 and 11 are perspective views illustrating a method of manufacturing a target structure according to a second embodiment of the present invention.

8, 10 and 12 are cross-sectional views illustrating a method of manufacturing a target structure according to a second embodiment of the present invention.

13, 15, 17, and 19 are perspective views illustrating a method of manufacturing the target structure according to the third embodiment of the present invention.

14, 16, 18 and 20 are cross-sectional views illustrating a method of manufacturing a target structure according to a third embodiment of the present invention.

21, 23, 25 and 27 are perspective views showing the manufacturing method of the target structure according to the fourth embodiment of the present invention.

22, 24, 26 and 28 are cross-sectional views illustrating a method of manufacturing the target structure according to the fourth embodiment of the present invention.

29 to 32 are perspective views illustrating target structures in accordance with embodiments of the present invention.

33 and 34 exemplarily illustrate an apparatus for generating a charged particle beam from a target structure according to the present invention.

Objects, other objects, features and advantages of the present invention will be readily understood through the following preferred embodiments associated with the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art.

In the present specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate or a third film may be interposed therebetween. In addition, in the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical contents. In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various regions, films, and the like, but these regions and films should not be limited by these terms. . These terms are only used to distinguish any given region or film from other regions or films. Thus, the film quality referred to as the first film quality in one embodiment may be referred to as the second film quality in other embodiments. Each embodiment described and illustrated herein also includes its complementary embodiment.

1, 3 and 5 are perspective views illustrating a method of manufacturing a target structure according to the first embodiment of the present invention, and FIGS. 2, 4 and 6 are views of the target structure according to the first embodiment of the present invention. Sectional drawing which shows the manufacturing method. Specifically, FIGS. 2, 4 and 6 show cross sections taken along the dashed line I-I of FIGS. 1, 3 and 5.

1 and 2, a mask pattern 110 is formed on the support 100. The mask pattern 110 may be formed to have an opening 105 that exposes the upper surface T of the support 100.

According to an embodiment of the present invention, the support 100 may be formed of a material having a single crystal structure. For example, the support 100 may be single crystal silicon. In this case, the upper surface T of the support 100 may have a (100) plane (a plane (100)) in a crystal structure.

However, the technical idea of the present invention is not limited by the material or crystal structure of the support 100. For example, according to other embodiments of the present invention, the support 100 may be at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials or metal materials, the crystal structure of which is a single crystal, Polycrystalline or amorphous, and the like.

The support 100 may be formed to a thickness of several hundred micrometers to several millimeters. According to some embodiments, the support 100 may be formed to a thickness of at least 100 micrometers. The thickness of the support 100 may be adjusted through a polishing or grinding process.

The mask pattern 110 may be formed of a material having an etch selectivity with respect to the support 100. That is, the mask pattern 110 may include one of materials that may have etching resistance in an etching process of etching the support 100. For example, when the support 100 is silicon, the mask pattern 110 may include at least one of silicon oxide, silicon nitride, or organic polymer materials.

3 and 4, the target layer 150 is formed on the bottom surface B of the support 100. Accordingly, the support 100 is interposed between the target layer 150 and the mask pattern 110.

The target layer 150 may be at least one of metal materials or compounds thereof. For example, the target layer 150 may include at least one of inert metal materials such as platinum, gold, and silver. The target layer 150 may be formed to a thickness of 0.001um to 10um. According to some embodiments, the target layer 150 may be formed to a thickness of 0.001um to 1um. Since the target layer 150 is supported by the thicker support body 100, the target layer 150 may not be damaged despite its thin thickness.

The target layer 150 may be formed using one of various methods for forming a thin film. For example, the target layer 150 may be formed using a method of chemical vapor deposition, physical vapor deposition, or electroplating. However, the technical idea of the present invention is not limited by the method of forming the target layer 150.

5 and 6, a through hole 200 is formed through the support 100 to expose the target layer 150. The through hole 200 may be formed by etching the upper surface of the support 100 exposed by the opening 105.

More specifically, the forming of the through hole 200 may include etching the support 100 using the mask pattern 110 as an etching mask. The etching recipe used in the etching step may be selected to have an etching selectivity with respect to the mask pattern 110 and the target layer 150. According to some embodiments, when the support 100 is single crystal silicon, the etching step may be performed using at least one of tetramethylammonium hydroxide (TMAH), ethylene diamine pyrocatechol (EDP), or KOH as an etching solution. In this case, as shown in FIG. 6, the sidewall of the through hole 200 may be formed to be inclined with respect to the upper surface of the target layer 150.

However, as described above, since the technical spirit of the present invention is not limited by the material or crystal structure of the support 100, the etching step is not limited by the method illustrated above. For example, the through hole 200 may be formed through a dry etching method, a dry etching method and a wet etching method, or a laser drilling method and a wet etching method.

7, 9 and 11 are perspective views illustrating a method of manufacturing a target structure according to a second embodiment of the present invention, and FIGS. 8, 10 and 12 illustrate a target structure according to a second embodiment of the present invention. Sectional drawing which shows the manufacturing method. Specifically, FIGS. 8, 10 and 12 show cross sections taken along the dashed line I-I of FIGS. 7, 9 and 11. For simplicity of description, descriptions of technical features overlapping with the above-described first embodiment may be omitted.

As in the previous embodiment, the mask pattern 110 is formed on the upper surface of the support 100, and the target layer 150 is formed on the lower surface of the support 100. However, according to this embodiment, before the target layer 150 is formed, the step of forming the etch stop layer 120 on the lower surface of the support 100 may be further performed. Accordingly, as shown in FIGS. 7 and 8, the etch stop layer 120 may be interposed between the support 100 and the target layer 150.

The etch stop layer 120 may be formed of a material having an etch selectivity with respect to the support 100. That is, the etch stop layer 120 may include at least one of materials that may have etch resistance in an etching process of etching the support 100. For example, when the support 100 is silicon, the etch stop layer 120 may include at least one of silicon oxide, silicon nitride, or organic polymer materials. Accordingly, as shown in FIGS. 9 and 10, the target layer 150 may be prevented from being etched while the supporter 100 is etched to form the through hole 200.

As such, the problem that the target layer 150 is damaged while the through-hole 200 is formed can be prevented, the target layer 150 may be formed of a variety of materials than in the first embodiment described above. That is, by the etch stop layer 120, the restriction on the type of material that may be used for the target layer 150 may be greatly alleviated. For example, according to this embodiment, the target layer 150 is formed of platinum, gold, silver, aluminum, titanium, hydrogenated amorphous silicon, or the like, or polymethyl methacrylate (PMMA). ), Polydimethylsiloxane (PDMS), polyimide (Polyimide) or may further include at least one of a photo resist (Photo resist).

Subsequently, the etch stop layer 120 exposed by the through hole 200 is selectively etched to expose the target layer 150, as shown in FIGS. 11 and 12. That is, an intermediate through hole is formed in the etch stop layer 120 to be aligned with the through hole 200 to expose the target layer 150. On the other hand, the etch stop layer 120 may be a material that can be selectively removed while minimizing the etch damage to the target layer 150, in this case, the target layer 150 is the through hole 200 without etching damage ) May be exposed.

In some embodiments, the etch stop layer 120 may not have an etch selectivity with respect to the mask pattern 110. In this case, the mask pattern 110 may be etched while exposing the target layer 150, or may be removed to expose the upper surface T of the support 100, as illustrated in FIGS. 11 and 12. .

13, 15, 17, and 19 are perspective views illustrating a method of manufacturing a target structure according to a third embodiment of the present invention, and FIGS. 14, 16, 18, and 20 are third embodiments of the present invention. Sectional drawing which shows the manufacturing method of the target structure which concerns on an example. Specifically, FIGS. 14, 16, 18 and 20 show cross sections taken along the dashed line I-I of FIGS. 13, 15, 17 and 19. For simplicity of description, descriptions of technical features overlapping with the aforementioned first and second embodiments may be omitted.

As in the exemplary embodiment described with reference to FIGS. 7, 9, and 11, the mask pattern 110 is formed on the upper surface of the support 100, and the etch stop is formed on the lower surface of the support 100. Layer 120 and the target layer are formed in turn. However, according to this embodiment, as shown in FIGS. 13 and 14, the target layer may include a first target layer 152 and a second target layer 154 formed of different materials.

15 and 16, a through hole 200 is formed through the support 100 to expose the etch stop layer 120. As described above, the etch stop layer 120 is formed of a material having an etch selectivity with respect to the support 100, so that the through hole 200 may be formed without etching damage to the first target layer 152. have. In addition, by preventing such etch damage to the first target layer 152, as in the above-described second embodiment, the first target layer 152 will not have restrictions on the kind of materials that can be used. Can be. In some embodiments, the first target layer 152 may be formed of platinum, gold, silver, aluminum, titanium, hydrogenated amorphous silicon, or the like.

17 and 18, the second target layer 154 is patterned to form emission patterns 156 and alignment patterns 158. According to some embodiments, in the horizontal position, the emission patterns 156 are disposed below the through hole 200, and the alignment patterns 156 are below the remaining portion of the support 100. Can be placed in.

In addition, as illustrated in FIG. 17, the emission patterns 156 may have a smaller area than the through hole 200. That is, a plurality of emission patterns 156 may be formed under the through hole 200. Each of the emission patterns 156 may be formed to have a width of 1 micrometer to 200 micrometers. In some embodiments, the second target layer 154 or the emission patterns 156 may be formed of a material that is lighter than the first target layer 152. For example, the second target layer 154 or the emission patterns 156 may include polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, and photoresist. It may include at least one of (Photo resist) or hydrogenated amorphous silicon (hydrogenated amorphous silicon).

Subsequently, as illustrated in FIGS. 19 and 20, the etch stop layer 120 exposed by the through hole 200 is etched to expose the first target layer 152. This step can be performed using the method of the above-described embodiment described with reference to FIGS. 11 and 12.

21, 23, 25 and 27 are perspective views illustrating a method of manufacturing a target structure according to a fourth embodiment of the present invention, and FIGS. 22, 24, 26 and 28 show a fourth embodiment of the present invention. Sectional drawing which shows the manufacturing method of the target structure which concerns on an example. Specifically, FIGS. 22, 24, 26 and 28 show cross sections taken along the dashed line I-I of FIGS. 21, 23, 25 and 27. For simplicity of description, descriptions of technical features overlapping with the first to third embodiments described above may be omitted.

According to this embodiment, as described with reference to FIGS. 13 and 14, the mask pattern 110 is formed on the upper surface of the support 100, and the etch stop layer is formed on the lower surface of the support 100. 120 and the target layer are sequentially formed, and the target layer may include a first target layer 152 and a second target layer 154 formed of different materials.

However, according to this embodiment, as shown in FIGS. 23 and 24, the second target layer 154 may be interposed between the first target layer 152 and the etch stop layer 120. That is, the second target layer 154 may be formed before forming the first target layer 152. In addition, the second target layer 154 may be patterned prior to forming the first target layer 152 to form the emission patterns 156 and the alignment patterns 158. Technical features related to materials, shapes, and arrangements of the first and second target layers 152 and 154 may be the same as in the foregoing exemplary embodiment described with reference to FIGS. 13, 15, 17, and 19. . However, according to other embodiments, as shown in FIG. 22, the emission patterns 156 and the alignment patterns 158 are formed on the bottom surface of the etch stop layer 120 using a damascene process. It may be formed to fill the recess region formed in the.

Meanwhile, according to some embodiments, as can be seen from the comparison of FIGS. 21 and 23, the mask pattern 110 sequentially forms the second and first target layers 154 and 152 and then supports the support. It may be formed on the upper surface (T) of the (100). However, according to other embodiments, the mask pattern 110 may be formed before the first target layer 152.

Next, as illustrated in FIGS. 25 and 26, the supporter 100 is etched using the mask pattern 110 as an etch mask, thereby forming a through hole 200 exposing the etch stop layer 120. do. On the other hand, as described in the above embodiments, since the etching damage to the target layer can be prevented by the etch stop layer 120, the second target layer 152 is limited to the type of material that can be used May not have In some embodiments, the second target layer 154 may include polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist, or It may include at least one of hydrogenated amorphous silicon, the first target layer 152 may be formed of platinum, gold, silver, aluminum, titanium, hydrogenated amorphous silicon (hydrogenated amorphous silicon) and the like. have.

Subsequently, the etch stop layer 120 exposed by the through hole 200 is selectively etched to expose the target layer. That is, as shown in FIG. 27 and FIG. 28, the emission patterns 156 and the first target layer 152 positioned below it are exposed through the through hole 200.

29 to 32 are perspective views illustrating target structures in accordance with embodiments of the present invention. Specifically, FIGS. 29 to 32 may be target structures manufactured through the manufacturing method according to the first to fourth embodiments described above, respectively.

29 to 32, a target layer 150 is formed on one surface of the support 100. According to embodiments of the present invention, the support 100 may be formed to a thickness of several hundred micrometers to several millimeters, and the target layer 150 may be formed to a thickness of 0.001um to 10um. According to some embodiments, the support 100 may be formed to a thickness of at least 100 micrometers, and the target layer 150 may be formed to a thickness of 0.001 um to 1 um. The support 100 has a through hole 200 through which the target layer 150 is exposed. According to some embodiments, the through hole 200 may be formed to have a sidewall inclined with respect to the upper surface of the support 100.

According to some embodiments, as illustrated in FIG. 29, the target layer 150 may be formed to directly contact the support 100. In this case, the target layer 150 may be formed of at least one of materials having an etch selectivity with respect to the support 100. For example, the target layer 150 may be formed of platinum, gold, silver, aluminum, titanium, hydrogenated amorphous silicon, or the like.

Meanwhile, according to other embodiments, as shown in FIGS. 30 to 32, an etch stop layer 120 may be further interposed between the support 100 and the target layer 150. When the etch stop layer 120 is formed, technical problems in which the target layer 150 is etched while forming the through hole 200 may be prevented. Accordingly, the material for the target layer 150 may be freely selected without substantial limitations. For example, according to these embodiments, the target layer 150 may be formed of inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide. (Polyimide), photoresist, or at least one of hydrogenated amorphous silicon (hydrogenated amorphous silicon).

The target layer 150 has a single layer structure as illustrated in FIGS. 29 and 30, or alignment patterns and emission patterns 156 formed on one surface of the first target layer 152 as illustrated in FIGS. 31 to 32. It may be a multilayer structure including (158). When the target layer 150 has a multilayer structure, the first target layer 152 is formed of one of the inert metal materials, and the emission patterns 156 may be formed of materials that are lighter than the first target layer 152 (eg, Aluminum, titanium, PMMA, PDMS, polyimide, photoresist and hydrogenated amorphous silicon).

In addition, when the target layer 150 has a multilayer structure, the laser beam LB may be irradiated onto the first target layer 152, and the charged particle beam PB may be emitted from the emission pattern 156. That is, as shown in FIG. 31, when the first target layer 152 is interposed between the emission patterns 156 and the support 100, the laser beam LB may close the through hole 200. It may be incident to the first target layer 152 through. Alternatively, as shown in FIG. 32, when the emission patterns 156 are interposed between the first target layer 152 and the support 100, the charged particle beam PB passes through the through hole 200. Can be released. The alignment pattern 158 may be used to adjust the relative position between the laser beam LB and the support 100.

Referring to FIG. 33, the apparatus 2100 may include a light source LS generating a laser beam LB and a target structure 1000 irradiated by the laser beam LB. The target structure 1000 may be one of those manufactured through the embodiments described with reference to FIGS. 1 through 28 or one described with reference to FIGS. 29 through 32.

In addition, the apparatus 2100 includes a light guide structure LGS for guiding the laser beam LB to the target structure 1000 and a charged particle beam PB emitted from the target structure 1000. It may include a charged particle beam guide structure (PGS) to guide (BO). The light guide structure LGS may be interposed between the light source LS and the target structure 1000, and may include a lens and / or a reflector. The charged particle beam guide structure PGS is interposed between the target structure 1000 and the biological object BO, and may include at least one of a mass analyzer MA, an accelerator AC, or a focusing device FA. Can be.

On the other hand, the light source LS is configured to generate a high power pulsed laser of at least 10 ¹³ Watts, and the light guide structure LGS has an intensity of 10 ¹⁸ W / cm ² of the laser beam LB. It may be configured to be incident on the target structure 1000. In this case, the charged particle beam LB may be generated through one of a target normal sheath acceleration (TNSA) mechanism or a radiation pressure acceleration (RPA) mechanism. More specifically, when the intensity of the laser beam LB incident on the target structure 1000 is in the range of 10 ¹⁸ to 10 ¹⁹ W / cm ² , the charged particle beam PB is generated through the TNS mechanism. 29 to 32, the emission is performed in a direction perpendicular to the surface of the target layer 150. However, when the intensity of the laser beam (LB) is 10 ²⁰ W / cm ^{2 or} more, the charged particle beam (PB) is generated through the radiation acceleration mechanism, the direction parallel to the incident direction of the laser beam (LB) It is released along.

In addition, when the target layer 150 is formed to have a thickness smaller than 1 micrometer, the light source LS may be configured to generate laser light having a high contrast ratio of at least 10 ¹⁰ . When a laser beam having such a high contrast ratio is used, a shock wave caused by the Amplified Spontaneous Emission (ASE) of the laser can be reduced. This reduction in shock wave makes it possible to reduce the thickness of the target layer 150 to less than 1 micrometer.

The apparatus 2100 for generating the charged particle beam described with reference to FIG. 33 may constitute a medical appliance 2000 for treating a malignant tumor or the like in a biological object BO as illustrated in FIG. 34. have. The medical device 2000 may further include a controller 2200 configured to control the charged particle beam generating device 2100 while providing a user interface.

Claims

A target layer having a first face irradiated by a laser beam and a second face at which the charged particle beam is emitted; And

Target structure comprising a support having a through hole used as a path for the laser beam or the charged particle beam.
The method according to claim 1,

The support is attached to the first surface of the target layer, the through hole is a target structure that is used as the path of the laser beam travel.
The method according to claim 1,

The support body is attached to the second surface of the target layer, the through hole is a target structure that is used as a path of travel of the charged particle beam.
The method according to claim 1,

The target layer is formed to a thickness of 0.001um to 10um,

The support includes at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials, or metal materials, the target structure being formed to a thickness of at least 100um.
The method according to claim 1,

The support includes a material of a single crystal structure,

The surface of the support in contact with the target layer has a (100) plane (a plane (100)).
The method according to claim 5,

The through hole may include a region having a width that increases with distance from the target layer.
The method according to claim 1,

The target layer includes at least one of the inert metal materials.
The method according to claim 1,

Further comprising an intermediate layer interposed between the target layer and the support,

And the intermediate layer has an intermediate through hole exposing the target layer, and the intermediate through hole is aligned with the through hole of the support.
The method according to claim 8,

The target layer is made of inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist or hydrogenated amorphous A target structure comprising at least one of hydrogenated amorphous silicon.
The method according to claim 1,

The target layer includes a first target layer and a second target layer formed of different materials,

The first target layer constitutes the first surface irradiated by a laser beam,

And the second target layer constitutes the second surface on which the charged particle beam is emitted.
The method according to claim 10,

The second target layer constitutes a plurality of emission patterns spaced apart from each other formed on the surface of the first target layer, each of the emission patterns having a width smaller than the through hole.
The method according to claim 10,

The first target layer is formed of at least one of metal materials,

The second target layer may be polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist, or hydrogenated amorphous silicon. Target structure formed of at least one of.
Target structure;

A light source for irradiating a laser beam to the target structure; And

It includes a guiding structure for guiding the charged particle beam emitted from the target structure to a biological object,

And the target structure includes a target layer formed on a support, the support having a through hole used as a path of travel of the laser beam or the charged particle beam.
The method according to claim 13,

The target layer is formed to a thickness of 0.001um to 10um,

The support includes at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials, or metal materials, wherein the support is formed to a thickness of at least 100um.
The method according to claim 13,

The target layer Inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist or hydrogenated amorphous silicon a medical device comprising at least one of amorphous silicon).
The method according to claim 13,

Further comprising an intermediate layer interposed between the target layer and the support,

The intermediate layer has an intermediate through hole exposing the target layer, the intermediate through hole aligned with the through hole of the support.
The method according to claim 13,

The target layer includes a first target layer to which the laser beam is irradiated and a plurality of emission patterns spaced apart from each other formed on the surface of the first target layer,

Each of the emission patterns has a width smaller than the through hole of the support.
The method according to claim 17,

The first target layer is formed of at least one of metal materials,

The emission patterns may be polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide, photoresist, or hydrogenated amorphous silicon. A medical instrument formed with at least one of the.
The method according to claim 13,

The light source is configured to irradiate the target layer with a laser beam having an intensity of at least 10 18 W / cm 2 .
The method according to claim 13,

The guiding structure includes an accelerator for accelerating the charged particle beam.