WO2012033326A2

WO2012033326A2 - Dense rare earth metal oxide coating film for sealing porous ceramic surface, and preparation method thereof

Info

Publication number: WO2012033326A2
Application number: PCT/KR2011/006586
Authority: WO
Inventors: 박동수; 이병국; 한병동; 이정환; 변응선
Original assignee: 한국기계연구원
Priority date: 2010-09-06
Filing date: 2011-09-06
Publication date: 2012-03-15
Also published as: KR101108692B1; WO2012033326A3

Abstract

The present invention relates to a dense rare earth metal oxide coating film for sealing a porous ceramic surface, and a preparation method thereof. Particularly, the present invention relates to a rare earth metal oxide coating film formed on a porous ceramic film of a substrate, wherein the porous ceramic film has an average surface roughness of 0.4 to 2.3 m. The dense rare earth metal oxide coating film for sealing a porous ceramic surface, and the preparation method thereof, according to the present invention, can provide not only the effect of ensuring withstand voltage characteristics due to the porous ceramic coating film having a sufficient thickness but also the effect of ensuring plasma resistivity due to the dense rare earth metal oxide coating film, and can therefore be applied to various parts of a semiconductor apparatus including a semiconductor etching apparatus.

Description

【Specification】

[Name of invention]

Dense rare earth metal oxide coating film for sealing porous ceramic surface and its manufacturing method

Technical Field

The present invention relates to a dense rare earth metal oxide coated membrane for sealing a porous ceramic surface and a method for producing the same.

<2>

Background Art

In general, a chamber of a facility used in a semiconductor manufacturing process is made using a ceramic bulk such as anodized aluminum alloy or alumina for insulation. Recently, as the need for corrosion resistance for highly corrosive gas or plasma used in semiconductor manufacturing processes, such as deposition equipment using chemical vapor deposition (CVD) or etching equipment using plasma etching, has increased. In order to have corrosion resistance, the chamber is manufactured through a method of spraying ceramic-ol plasma, such as alumina, thermal spray, or compacting and sintering on the aluminum alloy. In addition, since the semiconductor manufacturing process performed in the chamber takes a large number of high temperature processes such as a heat treatment process and a chemical vapor deposition film, the chamber is required to have heat resistance. That is, the parts of the semiconductor manufacturing equipment such as the chamber is cut. It is necessary to minimize the particle generation and wafer contamination during the manufacturing process by requiring softness, heat resistance, corrosion resistance, and polarization resistance, and maintaining a strong bonding force between the coating layer and the substrate so that the coating layer does not peel off. .

<4>

<5> To this end, conventional chemical vapor deposition, physical vapor deposition, or sputtering may be used. However, in this case, since it is a thin film manufacturing process, a process for forming a thick film that satisfies the requirements of corrosion resistance, etc. may be performed. There is a problem that the economy is inferior, such as taking too long time, it is difficult to obtain a strong bonding force between the substrate and the coating layer.

<6>

In the case of the plasma spraying or thermal spraying method, which is mainly used for the formation of the thick film, there is an advantage that the thick film can be formed. However, in the case of the above-mentioned hot process, the ceramic material is coated on the metal substrate. Engraving process after coating In this case, there is a problem in that the bonding force is lowered according to the difference in thermal expansion between the metal and the ceramic, and in some cases, there is a limit in that the high temperature process, such as melting of a metal substrate, produces an oxidized worm.

<8>

On the other hand, the aerosol film formation method can overcome the above problems and produce a dense thick film. However, in the case of rare earth metal oxide, it is difficult to make a dense thick film of 100 μηη or more. Therefore, problems may occur in the life of the thick film exposed to high voltage and plasma.

<10>

<ιι> In addition, a method for coating a thick film by plasma spraying to coat a thick film of 100 urn or more is shown in Korean Patent Laid-Open Publication No. 2003-0077155. However, when the thick film is coated through a plasma spraying process, a dense coating is prepared. There is a difficult problem.

<12>

Accordingly, the present inventors have completed the present invention to provide a dense plasma coating film that seals the surface of a porous thick film or a porous ceramic of more than 100 μιτι. It was possible to produce a coating film to overcome the problem that the lack of.

<14>

[Content of invention]

[Technical problem]

An object of the present invention is to provide a dense rare earth metal oxide coating film for sealing a porous ceramic surface and a method of manufacturing the same.

<16>

Technical Solution

<π> In order to achieve the above object, the present invention has an average surface roughness of 0.4 to 2.3

Provided is a rare earth metal oxide coating film formed on a porous ceramic layer of a substrate including a porous ceramic worm having a μιη.

<18>

In addition, the present invention comprises the step of forming a porous ceramic coating layer on the substrate through a plasma spray process (step 1);

<20> The surface of the porous ceramic coating layer formed in step 1 is 0.4 to 2.3 Processing to have an average surface roughness (step 2); And

It provides a rare earth metal oxide coating film comprising the step (step 3) of coating the rare earth metal oxide powder on the porous ceramic coating layer subjected to the processing of step 2 by the aerosol film formation method.

<22>

Further, the present invention comprises the steps of forming a porous ceramic substrate through a sintering process (step a);

(24) processing the surface of the porous ceramic substrate formed in step a to have an average surface roughness of 0.4 to 2.3 ym (step b); And

Provided is a rare earth metal oxide coating film comprising the step (step C) of coating a rare earth metal oxide powder on a porous ceramic substrate subjected to the processing of step b through an aerosol film formation method.

<26>

Advantageous Effects

The dense rare earth metal oxide coating film for sealing the porous ceramic surface according to the present invention and a method for manufacturing the same are characterized in that the voltage resistance is secured by the porous ceramic coating layer of sufficient thickness and the plasma corrosion resistance is secured by the dense rare earth metal oxide coating film. There is an effect that can be achieved, it can be applied to various semiconductor equipment components, including semiconductor etching equipment.

<28>

[Brief Description of Drawings]

1 is a schematic view showing a cross section of a rare earth metal oxide coating film according to the present invention;

2 is a schematic view showing a schematic diagram of a process of performing an aerosol-based film;

3 is a photograph showing the surface of the rare earth metal oxide coating film according to the present invention;

4 is a photograph showing a surface which is not subjected to sand blast and a surface which is performed only up to sand blast in Examples 1 to 3 of the present invention;

FIG. 5 is a photograph showing a surface which is only sandblasted and a surface which is not sandblasted in Comparative Examples 1 to 3 of the present invention; FIG.

6 is a photograph showing the degree of peeling of the rare earth metal oxide coating film prepared through Examples 1 to 3 and Comparative Example 4 of the present invention;

7 is a rare earth metal prepared through Comparative Examples 1 to 3 and Comparative Example 4 of the present invention. It is a photograph which shows the peeling degree of an oxide coating film;

FIG. 8 is a photograph of a cross section of a rare earth metal oxide coating film prepared according to Example 1 of the present invention with a scanning electron microscope; FIG.

FIG. 9 is a photograph of a cross-section of a rare earth metal trioxide coating film prepared according to Example 4 of the present invention with a scanning electron microscope; FIG.

10 is a schematic diagram showing a method of performing an adhesive strength analysis in Experimental Example 4 of the present invention;

11 is a photograph of a cross section of a specimen subjected to the adhesive strength analysis in Experimental Example 4 of the present invention through a main prescan microscope;

12 is a photograph of a cross section of a specimen subjected to the adhesive strength analysis in Experimental Example 4 of the present invention through an energy dispersive X-ray spectrometer (EDS).

<41>

[Best form for implementation of the invention]

Hereinafter, the present invention will be described in detail.

<43>

The present invention provides a rare earth metal oxide coating film formed on a porous ceramic layer of a substrate including a porous ceramic layer having an average surface roughness of 0.4 to 2.3 μ 1 _GPa . An example of the rare earth metal oxide coating film is shown in FIG. 1 as a schematic cross-sectional view.

<45>

The porous ceramic layer has an average surface roughness of 0.4 to 2.3 μπι

^■ The adhesive force with the rare earth metal oxide coating film according to the present invention is high. If the average surface roughness of the surface of the porous ceramic layer is less than 0.4 urn, there is a problem in that the adhesion between the porous ceramic layer and the rare earth metal oxide coating film is inferior, and if the average surface roughness exceeds 2.3 11 m, the porous ceramic layer is over It is difficult to form a rare earth metal oxide coating film on the substrate.

In this case, the porous ceramic layer is a porous coating layer formed by the coating, for example, may be coated through a plasma spray process, but is not limited thereto.

In addition, the substrate may be a porous ceramic substrate of the same material as the porous ceramic layer having an average surface roughness of 0.4 to 2.3 μιη, for example, a porous ceramic formed of the same material as the porous ceramic layer and formed through a sintering process. A substrate may be used, but is not limited thereto. In addition to the porous ceramic substrate of the same material as the porous ceramic layer, a metal substrate, a ceramic substrate, a polymer substrate, and the like may be used, and the metal substrate may be an iron (Fe) substrate _{, an} iron alloy substrate, a magnet (Mg) substrate, or a magnet. A chest alloy substrate, an aluminum (A1) substrate, an aluminum alloy substrate, and the like may be used, and the ceramic substrate may be Si0 ₂ , MgO, CaC0 _3> alumina substrate, or the like, and the polymer substrate may be polyethylene terephthalate. (PET), polyethylene naphthalate (PEN), polypropylene aditite (PPA), polyisocyanate (PI) substrates and the like can be used, but is not limited thereto.

<50>^'

On the other hand, the porous ceramic layer is preferably a porous alumina layer. When the porous ceramic insect is a porous alumina insect, it is possible to maintain the characteristics of the substrate itself and at the same time excellent corrosion resistance can be applied to the rare earth metal oxide coating film according to the invention as a semiconductor equipment component requiring corrosion resistance such as semiconductor etching equipment. .

<52>

The density of the rare earth metal oxide coating film according to the present invention is preferably 90% or more. When the density of the rare earth metal oxide coating film is less than 90%, there is a problem that it is difficult to secure corrosion resistance to high-density plasma, and it is difficult to control the breakdown voltage and leakage current.

In addition, the rare earth metal oxide coating layer preferably has a thickness of 1 to 50 μιη. If the thickness of the rare earth metal oxide coating film is less than 1 _μηι , there is a problem in that the film is easily peeled off when exposed to the _plasma. If the thickness of the rare earth metal oxide coating film exceeds 50! Im, the peeling occurs due to the residual force of the coating film. There is a problem, and there is also a problem that peeling may occur during post-processing. Furthermore, there is a problem in that economic losses are caused by excessive use of expensive rare earth metals.

<55>

Meanwhile, as the rare earth metal oxide, yttria (Y ₂ 0 ₃ ) ᅳ disprocia (Dy ₂ 0 ₃ ), avia (Er ₂ 0 ₃ ), samaria (¾) and the like may be used.

Rare earth metal oxides such as yttria (Y ₂ 0 ₃ ) ᅳ disprocia (Dy ₂ 0 ₃ ), ervia (Er ₂ 0 ₃ ), and samaria (Sm ₂ 0 ₃ ) are plasma exposed during semiconductor processing. By having a strong resistance to, it is possible to ensure the corrosion resistance and withstand voltage characteristics for the plasma of the semiconductor process when the rare earth metal oxide coating film of the present invention is applied to the semiconductor equipment components requiring corrosion resistance, such as semiconductor etching equipment. <58>

The rare earth metal oxide coating film according to the present invention has a high corrosion resistance to plasma that can be exposed to semiconductor processes, and a compact structure makes it easy to control breakdown voltage and leakage current, and thus includes semiconductor etching equipment. It can be applied to existing semiconductor equipment parts.

<60>,

In addition, the present invention

<62> forming a porous ceramic coating on the substrate through a plasma spray process

(Step 1);

Processing the surface of the porous ceramic coating layer formed in step 1 to have an average surface roughness of 0.4 to 2.3 μιη (step 2); And

It provides a rare earth metal oxide coating film comprising the step (step 3) of coating the rare earth metal oxide on the porous ceramic coating layer subjected to the processing of step 2 by the aerosol film forming method.

<65>

Hereinafter, the present invention will be specifically described step by step.

<67>

In the method of manufacturing a rare earth metal oxide coating film according to the present invention, step 1 is a step of forming a porous ceramic coating layer on a substrate through a plasma spray process.

In this case, the porous ceramic coating is preferably a porous alumina coating, but is not limited thereto. When the porous ceramic coating layer is a porous alumina coating layer, while maintaining the characteristics of the substrate itself and at the same time can exhibit excellent corrosion resistance semiconductor equipment components that require corrosion resistance of the rare earth metal oxide coating film produced by the manufacturing method such as semiconductor etching equipment Can be applied as

The substrate of step 1 may be a metal substrate, a ceramic substrate, a polymer substrate, and the like, and the metal substrate may be an iron (Fe) substrate, an iron alloy substrate, a magnesium (Mg) substrate, a magnesium-based alloy substrate, an aluminum ( A1) substrate, an aluminum-based alloy substrate, etc. may be used, and the ceramic substrate may be Si0 ₂ , MgO, CaC0 ₃ , alumina substrate, etc., and the polymer substrate may be polyethylene terephthalate (PET), polyethylene, Phthalate (PEN), polypropylene adipate (PPA), polyisocyanate (PI) substrates and the like can be used, but are not limited thereto. In the manufacturing method of the rare earth metal oxide coating film according to the present invention, step 2 is a step of processing so that the surface of the porous ceramic coating layer formed in step 1 has an average surface roughness of 0.4 to 2.3 iim, step 1 After the porous ceramic coating layer formed in the grinding process to have a uniform thickness, the surface is roughened so that the surface of the porous ceramic coating layer has an average surface roughness of 0.4 to 2.3 μηι. In this case, the processing may be performed using a sandblast, but is not limited thereto.

The surface of the porous ceramic coating layer formed in step 1 through the processing is 0.4

It can be roughened to have an average surface roughness of ~ 2.3 μηι, through which it is possible to improve the adhesion between the porous ceramic coating layer and the rare earth metal oxide coating film.

<74>

On the other hand, the sand blast is preferably carried out by the air pressure of 1 to 5 atm. If sandblasting is performed at an air pressure of less than 1 atm, there is a problem that the surface roughness of the porous ceramic coating layer cannot be increased. There is a problem that this is not done properly.

<76>

In the manufacturing method of the rare earth metal oxide coating film according to the present invention, step 3 is a step of coating a rare earth metal oxide on the porous ceramic coating layer subjected to the processing in step 2 by an aerosol film formation method, wherein the aerosol film formation is performed. Figure the process in which this is performed

Shown schematically through the process diagram of 2.

The rare earth metal oxide coating layer may be formed by coating rare earth metal oxides on the ceramic coating layer through the aerosol deposition method of Step 3.

In this case, the rare earth metal oxide is a group including yttria (Υ ₂ 0 ₃ ), dysprosia (Dy ₂ 0 ₃ ), a via (Er ₂ 0 ₃ ), and samaria (Sm ₂ 0 ₃ ). It is preferably selected from.

The rare earth metal oxide has a strong resistance to the plasma exposed to the semiconductor process, so that the rare earth metal oxide coating film produced by the manufacturing method according to the present invention has the characteristics of corrosion resistance and voltage resistance for the plasma of the semiconductor process To secure it.

<81>

On the other hand, the compressed air of the medical grade when performing the aerosol deposition of step 3 Preference is given to using. By using the compressed air of the medical grade, it is generally possible to prevent a problem that aerosolization is not performed by moisture contained in the air, and also to prevent the formation of impurities such as oil inside the air during aerosol film formation. have.

<83>

In addition, the present invention

Forming a porous ceramic substrate through the sintering process (step a);

Processing the surface of the porous ceramic substrate formed in step a to have an average surface roughness of 0.4 to 2.3 μιη (step b); And

Provided is a rare earth metal oxide coating film comprising a step (step C) of coating a rare earth metal oxide on the porous ceramic substrate subjected to the processing of step b through an aerosol film formation method.

<88>

In the manufacturing method of the rare earth metal oxide coating film according to the present invention, step a is a step of forming a porous ceramic substrate through a sintering process. The porous ceramic substrate formed through the sintering process of step a is preferably a porous alumina substrate, but is not limited thereto.

<90>

In the manufacturing method of the rare earth metal oxide coating film according to the present invention, step b is a step of processing the surface of the porous ceramic substrate formed in step a to have an average surface roughness of 0.4 to 2.3 μηι. The processing of step b may be performed through a sand blast, but is not limited thereto.

Through the processing, the surface of the porous ceramic substrate formed in step _a may be roughened, thereby improving adhesion between the porous ceramic substrate and the rare earth metal oxide layer. However, if the surface of the porous ceramic substrate formed in step a has an average surface roughness of 0.4 to 2.3 μηι, the processing of step b may be omitted.

<93>

On the other hand, the sand blast is preferably carried out at an air pressure of 1 to 5 atm ᅳ If the sand blast is carried out at a pneumatic pressure of less than the industrial pressure there is a problem that can not increase the surface roughness of the porous ceramic substrate, In case of air pressure of 5 atm or higher, the surface roughness becomes excessively high and the porous ceramic substrate There is a problem that the coating is not made properly.

<95>

In the method of manufacturing a rare earth metal oxide coating film according to the present invention, step C is a step of coating the rare earth metal oxide on the porous ceramic substrate subjected to the processing of step b by an aerosol film formation method, and forming the aerosol film. This process is shown schematically through the schematic diagram of FIG.

The rare earth metal oxide coating film may be formed by coating the rare earth metal oxide on the porous ceramic substrate on which the processing of step b is performed through the aerosol film formation method of step C.

In this case, the rare earth metal oxide is selected from the group consisting of yttria (¾), dysprocia (Dy ₂ 0 ₃ ), avia (Er ₂ ¾), and samaria (Sm ₂ 0 ₃ ). desirable.

The rare earth metal oxide has a strong resistance to the plasma exposed during the semiconductor process, the rare earth metal oxide coating film produced through the manufacturing method according to the invention ensures the corrosion resistance and withstand voltage characteristics for the plasma of the semiconductor process To do it.

<100>

Meanwhile, it is preferable to use compressed air of medical grade when performing the aerosol film formation of step C. By using the compressed air of the medical grade, it is generally possible to prevent a problem that aerosolization is not performed by moisture contained in the air, and also to prevent the formation of impurities such as oil in the air during film formation. have.

<102>

[Form for implementation of invention]

Hereinafter, the present invention will be described in detail by the following examples.

However, the following examples are only to illustrate the present invention, but the content of the present invention is not limited by the following examples.

<105>

<Example 1> Preparation of rare earth metal oxide coating film 1

Step 1: Alumina coated layer having a thickness of 500 μιη was formed on the 2 cm X 2 cm surface by a plasma spray method on a 2 cm X 2 cm x 0.5 cm (thick) aluminum plate.

<108>

Step 2: Grinding the alumina coating layer of step 1 and 200 grit white aluminium B powder was used to sand blast with air pressure of 2 atmospheres.

<110>

<πι> Step 3: A yttria coating layer was formed on the alumina coating layer subjected to sand blasting in step 2 by aerosol film formation to prepare a rare earth metal oxide coating layer (yttria).

<112>

<Example 2> <Example 2> Preparation of Rare Earth Metal Oxide Coating Film 2

<Π4> In step 2 of Example 1 to 200 grit white alumina to 4 atm air pressure

A rare earth metal oxide coating layer (yttria) was prepared in the same manner as in Example 1 except that the furnace sand blast was performed.

<115>

Example 3 Preparation of Rare Earth Metal Oxide Coating Film 3

A rare earth metal oxide coating film (Tria) was prepared in the same manner as in Example 1 except that sand blasting was performed at 5 atmospheres of air pressure in Step 2 of Example 1.

<118>

<Example 9> Example 4 Preparation of Rare Earth Metal Oxide Coating Film 4

In the same manner as in Example 1 except that a commercially available porous alumina ceramic substrate manufactured by sintering instead of the alumina coating layer was prepared in Step 1 of Example 1, a rare earth metal oxide coating layer (Yttria) was manufactured. It was.

<121>

Example 5 Preparation of Rare Earth Metal Oxide Coating Film 5

A rare earth metal oxide coating film (disprocia) was prepared in the same manner as in Example 1, except that the disprocia coating layer was formed instead of the yttria coating layer in Step 3 of Example 3.

<124>

Example 6 Preparation of Rare Earth Metal Oxide Coating Film 6

A rare earth metal oxide coating (Avia) was prepared in the same manner as in Example 1, except that the Avia coating layer was formed instead of the yttria coating layer in Step 3 of Example 3.

<127>

Example 7 Preparation of Rare Earth Metal Oxide Coating Film 7 A rare earth metal oxide coating layer (samaria) was prepared in the same manner as in Example 1 except that the samaria coating layer was formed instead of the yttria coating layer in Step 3 of Example 3.

<130>

A rare earth metal oxide coating film surface photograph prepared through Examples 3, 5, 6, and 7 of the present invention is shown in FIG. 3.

<132>

Comparative Example 1 Preparation of Rare Earth Metal Oxide Coating Film 8

The rare earth metal oxide coating layer was manufactured in the same manner as in Example 1, except that sand blasting was carried out using 40 grit white alumina powder in step 2 of Example 1 at an air pressure of 1 atmosphere. Prepared.

<135>

<Comparative Example 2> Preparation of Rare Earth Metal Oxide Coating Film 9

Comparative Example 1, except that sand blasting was performed at an air pressure of 3 atmospheres.

To perform the same as the to prepare a rare earth metal oxide coating film.

<138>

Comparative Example 3 Preparation of Rare Earth Metal Oxide Coating Film 10

Comparative Example 1 except that sand blasting was performed at an air pressure of 5 atmospheres.

In the same manner as in the rare earth metal oxide coating film was prepared.

<141>

<Comparative Example 4> Preparation of Rare Earth Metal Oxide Coating Film 11

A rare earth metal oxide coating was prepared in the same manner as in Example 1, except that the yttria coating layer was formed on the alumina coating layer by aerosol deposition without performing sand blasting.

<144>

Experimental Example 1 Surface Roughness Measurement

In Examples 1 to 3 and Comparative Examples 1 to 3 of the present invention, the surface roughness of the alumina coating layer and the surface roughness and the alumina coating layer not performing sandblasting were measured until sand blasting before aerosol deposition was performed. The results are shown in Table 1 below, and FIGS. 4 and 5.

<147>

<148> [Table 1] Classification Table ^ Roughness (urn)

Sandblast Performs Low 0.3

Comparative Example 1 2.36

Comparative Example 2 2.88

Comparative Example 3 4.29

Example 1 0.56

Example 2 1.60

Example 3 1.76

Examination Example 4 0.74

<149>

As shown in Table 1, the surface roughnesses of Examples 1 to 3 where sandblasting was performed with 200 grit white alumina were 0.5 to 1.8 μιη, and Comparative Examples 1 to 3 were sandblasting with 40 grit white alumina. A surface roughness of 2.3 to 4.3 μΐ was shown. It also exhibited a surface roughness of 0.3 to 0.4 m without sandblasting. Through this it was confirmed that it is possible to increase the surface roughness of the alumina coating layer through the sand blast.

<151>

<Experiment 2> Peeling analysis of the rare earth metal oxide coating film

The degree of peeling was analyzed according to the surface roughness of the rare earth metal oxide coating film prepared through Examples 1 to 3 and Comparative Examples 1 to 4 of the present invention, and the results are shown in FIGS. 6 and 7.

6 and 7, the rare earth metal oxide coating film prepared in Comparative Example 4 was confirmed that the coated portion is peeled off a lot. This is because the surface roughness was low because the coating was carried out without performing sandblasting, thereby lowering the bonding strength with the alumina coating layer was easily peeled off. However, the rare earth metal oxide coating film prepared in Examples 1 to 3 of the present invention was confirmed that the peeling was hardly made. In addition, the coating film prepared through Comparative Examples 1 to 3 'It was confirmed that a large number of the portion is not coated. This is because the surface of the alumina layer of Comparative Examples 1 to 3 is too rough to coat the rare earth metal oxide well, that is, in the present invention, the surface roughness is adjusted to the optimum range through sandblasting and the rare earth metal oxide is adjusted. It was confirmed that coating was effective.

<155>

Experimental Example 3 Analysis by Scanning Electron Microscope

Rare Earth Metal Oxide Coating Films Prepared by Examples 1 and 4 of the Present Invention The cross section of was analyzed by scanning electron microscope, and the results are shown in FIGS. 8 and 9.

As shown in FIG. 8, it was confirmed that the yttria layer was smoothly coated on the alumina layer in the cross section of the rare earth metal oxide coating film prepared according to Example 1 of the present invention. It was also confirmed that the coated yttria layer was very dense.

As shown in FIG. 9, the cross-section of the rare earth metal oxide coating film prepared according to Example 4 of the present invention also confirmed that the yttria layer was smoothly coated on the alumina layer, and the coated yttria layer was It was confirmed that the structure is very dense. Through this, it can be seen that a compact rare earth oxide coating film can be formed on the ceramic porous sintered body.

<160>

Experimental Example 4 Tensile Adhesion Test

The rare earth metal oxide coating film prepared according to Example 6 of the present invention is shown in FIG.

As shown in the IS013779-4 standard, high-strength epoxy was applied to the upper and lower surfaces of the coating layer and fixed to the upper and lower fixtures of the tensile tester. A tensile adhesion test was performed. The cross section after the analysis was observed through SEM / EDS. Photos are shown in FIGS. 11 and 12.

11 and 12, it was confirmed that the rare earth metal oxide coating layer (yttria coating layer) formed in Example 6 of the present invention was very strongly adhered to the sandblasted alumina insect. This means that the cohesion strength and the adhesion strength between the rare earth metal oxide coating layer and the alumina layer are higher than that in the alumina coating layer formed by the plasma spraying process. As can be seen that the rare earth metal oxide coating film according to the present invention is not easily peeled or damaged.

<164>

Experimental Example 5 Density Measurement of Coating Film

The density of the rare earth metal oxide coating film prepared in Example 1 of the present invention was measured by the Archimedes method.

As a result of measuring the density of the rare earth metal oxide coating film prepared in Example 1 of the present invention by the Archimedes method, a numerical value having a relative density of 95.3% was obtained. This means that the rare earth metal oxide coating film has a very dense structure according to the present invention. Accordingly, it was confirmed that the rare earth metal oxide coating film according to the present invention overcomes the problems caused by the existing high porosity and exhibits a dense structure.

Claims

[Range of request]

[Claim 11

A rare earth metal oxide coating film formed on a porous ceramic layer of a substrate comprising a porous ceramic layer having an average surface roughness of 0.4 to 2.3 m.

[Claim 2]

The rare earth metal oxide coating of claim 1, wherein the porous ceramic layer is a porous coating layer formed by coating.

[Claim 3]

The method of claim 1, wherein the substrate has an average surface roughness of zero.

Rare earth metal oxide coating film, characterized in that the porous ceramic substrate of the same material as the porous ceramic layer of 4 to 2.3 m. ^'[Claim 4]

The rare earth metal oxide coating of claim 5, wherein the porous ceramic layer is a porous alumina layer.

[Claim 5]

The rare earth metal oxide coating film of claim 1, wherein the rare earth metal oxide coating film has a density of 90% or more.

[Claim 6]

The rare earth metal oxide coating film of claim 1, wherein the rare earth metal oxide coating film has a thickness of 1 to 50 m.

[Claim 7]

The rare earth metal oxide of claim 1, wherein the rare earth metal oxide comprises yttria (Y ₂ 0 ₃ ), dysprosia (Dy ₂ 0 ₃ ), aervia (Er ₂ 0 ₃ ), and samaria (Sm ₂ 0 ₃ ). Rare earth metal oxide coating film characterized in that it is selected from the group.

[Claim 8] The rare earth metal oxide coating film of claim 1, wherein the coating film is applied to a component for a semiconductor device including a semiconductor etching device.

[Claim 9]

Forming a porous ceramic coating layer on the substrate through a full-lasma spraying process (step 1);

Processing the surface of the porous ceramic coating layer formed in step 1 to have an average surface roughness of 0.4 to 2.3 m (step 2); And

A method of manufacturing a rare earth metal oxide coating film comprising the step (step 3) of coating a rare earth metal oxide on the porous ceramic coating layer in which the processing of step 2 is performed through an aerosol film formation method.

[Claim 10]

20. The method of claim 19, wherein the processing of step 2 is performed by sand blast.

[Claim 11]

The method of claim 10, wherein the sand blast is carried out at an air pressure of 1 to 5 atm.

[Claim 12]

20. The method of claim 19, wherein the aerosol deposition method of Step 3 uses compressed air of medical grade.

[Claim 13]

Forming a porous ceramic substrate through a sintering process (step a);

Processing the surface of the porous ceramic substrate formed in step a to have an average surface roughness of 0.4 to 2.3 m (step b); And

A rare earth metal oxide coating film comprising the step (step c) of coating a rare earth metal oxide on the porous ceramic substrate subjected to the processing of step b through an aerosol film forming method.

[Claim 14] The method of claim 13, wherein the processing of step b is performed by sand blast.

[Claim 15]

15. The method of claim 14, wherein the sand blast is carried out at an air pressure of 1 to 5 atm.

[Claim 16]

15. The method of claim 13, wherein the aerosol deposition method of step c comprises using medical grade compressed air.