WO2010034725A3 - Method for the production of a semiconductor component, in particular a solar cell, on the basis of a thin silicon layer - Google Patents

Method for the production of a semiconductor component, in particular a solar cell, on the basis of a thin silicon layer Download PDF

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Publication number
WO2010034725A3
WO2010034725A3 PCT/EP2009/062286 EP2009062286W WO2010034725A3 WO 2010034725 A3 WO2010034725 A3 WO 2010034725A3 EP 2009062286 W EP2009062286 W EP 2009062286W WO 2010034725 A3 WO2010034725 A3 WO 2010034725A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
basis
solar cell
silicon
porous layer
Prior art date
Application number
PCT/EP2009/062286
Other languages
French (fr)
Other versions
WO2010034725A2 (en
WO2010034725A4 (en
Inventor
Jan Hensen
Andreas Wolf
Barbara Terheiden
Original Assignee
Institut Für Solarenergieforschung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Publication of WO2010034725A2 publication Critical patent/WO2010034725A2/en
Publication of WO2010034725A3 publication Critical patent/WO2010034725A3/en
Publication of WO2010034725A4 publication Critical patent/WO2010034725A4/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
PCT/EP2009/062286 2008-09-23 2009-09-22 Method for the production of a semiconductor component, in particular a solar cell, on the basis of a thin silicon layer WO2010034725A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008048498A DE102008048498A1 (en) 2008-09-23 2008-09-23 Method for producing a semiconductor component, in particular a solar cell, based on a thin silicon layer
DE102008048498.9 2008-09-23

Publications (3)

Publication Number Publication Date
WO2010034725A2 WO2010034725A2 (en) 2010-04-01
WO2010034725A3 true WO2010034725A3 (en) 2010-09-23
WO2010034725A4 WO2010034725A4 (en) 2010-11-11

Family

ID=41794858

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/062286 WO2010034725A2 (en) 2008-09-23 2009-09-22 Method for the production of a semiconductor component, in particular a solar cell, on the basis of a thin silicon layer

Country Status (2)

Country Link
DE (1) DE102008048498A1 (en)
WO (1) WO2010034725A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103303904B (en) * 2013-06-13 2014-12-03 中国科学院金属研究所 Method for preferentially growing metallic single-walled carbon nanotube by using non-metallic silicon oxide as catalyst
DE102014103303A1 (en) 2014-03-12 2015-10-01 Universität Konstanz Process for producing solar cells with simultaneously etched-back doped regions
WO2017136672A1 (en) * 2016-02-05 2017-08-10 Applied Materials, Inc. Porous silicon structures and laser machining methods for semiconductor wafer processing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000045426A1 (en) * 1999-01-27 2000-08-03 Interuniversitaire Microelektronicacentrum Vzw Method for fabricating thin film semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19730975A1 (en) 1997-06-30 1999-01-07 Max Planck Gesellschaft Porous material especially single crystal silicon layer production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000045426A1 (en) * 1999-01-27 2000-08-03 Interuniversitaire Microelektronicacentrum Vzw Method for fabricating thin film semiconductor devices

Also Published As

Publication number Publication date
WO2010034725A2 (en) 2010-04-01
DE102008048498A1 (en) 2010-04-08
WO2010034725A4 (en) 2010-11-11

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