WO2009106177A1 - Method of transferring a thin layer onto a support substrate - Google Patents
Method of transferring a thin layer onto a support substrate Download PDFInfo
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- WO2009106177A1 WO2009106177A1 PCT/EP2008/066854 EP2008066854W WO2009106177A1 WO 2009106177 A1 WO2009106177 A1 WO 2009106177A1 EP 2008066854 W EP2008066854 W EP 2008066854W WO 2009106177 A1 WO2009106177 A1 WO 2009106177A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Abstract
The present invention relates to a method for transferring a layer (12) by the formation of an embhttlement area in a source substrate (10) onto a support substrate (30), comprising the successive steps of: (a) formation of a bonding layer (20) on the source substrate (10), (b) implantation of ions from a first species in the source substrate (10) through the bonding layer (20), so as to form an embrittlement area defining the layer (12) to transfer, (c) placement of the bonding layer (20) and the support substrate (30) in close contact, (d) fracturing of the source substrate (10) along the embrittlement area so as to transfer the layer (12) onto the support substrate (30). Said method comprises, before step (a), the implantation of ions from a second species in the source substrate (10) so as to form said embrittlement area.
Description
METHOD OF TRANSFERRING A THIN LAYER ONTO A SUPPORT SUBSTRATE
FIELD OF THE INVENTION
The present invention relates to a method for transferring a thin layer onto a support substrate for applications in optics, optoelectronics or microelectronics.
BACKGROUND OF THE INVENTION The transfer of a thin layer of a source substrate onto a support substrate by a
Smart Cut ™ type process necessitates the formation of an embrittlement plane in the source substrate - this embrittlement plane may be obtained by the implantation of ionic species such as hydrogen ions - then the fracture of the source substrate along the embrittlement plane. Thin layer or film is understood to refer to a layer whose thickness is typically between 50 nanometers and 2 micrometers.
The implantation dose necessary to obtain a fracture in Ill/N materials is much higher than in silicon. A precursor criterion for a fracture at the embrittlement plane is the appearance of blistering of the implanted surface, the surface not being covered by a stiffener. This blistering appears when the source substrate implanted at a sufficient dose is subjected to a sufficient thermal budget. Thus, the appearance of blistering constitutes a sign about the fact that the implanted dose and the thermal budget allow fracturing, the implanted surface is then covered by a stiffener. However, blistering presents a harmful effect if it intervenes before the transfer, since it compromises the mechanical strength of the layers bonded or deposited on the implanted source substrate. Thus one tries to avoid its appearance.
Thus a dose of 5.1016 H+/cm2 generally suffices for the transfer of a thin layer of silicon while a dose of 1 to 5.1017 H+/cm2 is necessary for the transfer of a thin layer of GaN (in this respect, one may refer to the article "Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut™ technology," by A. Tauzin et al. in Electronics letters 26th May 2005, vol. 41 , No.11 ). In addition, it will be noted that the dose has little influence on the depth of the implantation and thus on the thickness of
the layer transferred; this parameter is mainly determined by the implantation energy and the species implanted.
Now such implantation doses contribute to damaging the material of the source substrate. In order to reduce the total implantation dose, it is known that it is favorable to carry out a co-implantation of helium and hydrogen ions under conditions that allow an average implantation depth that is rather similar for the two species to be reached. For example, an implantation dose of helium ions from 1.5 to 4.1017 He+/cm2 with an energy from 80 to 160 keV, supplemented by an implantation dose of hydrogen ions from 1.1017 to 2.1017 H+/cm2 with an energy from 60 to 100 keV, enables the thin film to be exfoliated, that is, to detach the film along the embrittlement area formed by implantation..
However, these reduced co-implantation doses damage the material even more over a significant thickness at the fracture area, particularly for the fracture of Ill/N materials. After detachment of the layer, approximately 250 nm of damaged material at the surface of the GaN must typically be eliminated.
One may then contemplate transferring a thicker layer by deeper implantation of ionic species, in order to be able to eliminate, after fracturing, all the damaged material on the layer transferred and to obtain a residual layer of material presenting a desired thickness and crystalline quality for intended applications. These applications particularly include the resumption of epitaxy (homo or heteroepitaxy) of the Ill/N materials to form, for example, LEDs, which explains why the material of the thin film transferred must present good crystallinity and little damage.
To implant the ionic species more deeply, the implantation energy thus must be increased.
Now, the energy necessary for implantation must be a limiting parameter depending on the implanters used. In fact, an implanter known as a "high current" implanter designates an implanter whose ionic species implantation energy peaks at 120 keV while a "medium current" implanter allows an implantation energy of up to 400 keV, and a very high energy implanter, which is not very widespread, enables implantation with an energy of several million eV.
But these implanters do not enable the same ionic species implantation speed, which is directly linked to the current of the implanter. The "high current" implanter has an implantation current of 10 to 30 mA and will enable much faster implantation than a medium current implanter limited to 10 mA or a very high energy implanter that has a current of 10 to 100 μA.
One of the objects of the invention is to reduce the implantation energy and to use the fastest implanter for the same given dose, that is, the high current implanter.
It is known that co-implantation of helium and hydrogen ions reduces, under certain conditions, the thermal budget to provide to obtain the fracture. In addition, it could be shown that in the case of Ill/N materials, carrying out implantation of a heavy species (helium) following the same implantation profile (i.e., positioning of the concentration peaks) as a light species (hydrogen ions) is more favorable.
However, heavy species implantation necessitates more energy than that of light species to reach a maximum concentration at the same depth. For standard high current implanters, it may thus be difficult to reach the energies necessary for the implantation of helium ions to transfer a layer of more than 500 nm in GaN.
An additional difficulty resides in the deposition of a bonding layer allowing adhesion between the embrittled source substrate and the support substrate. The deposition of this bonding layer is prior to the implantation. In fact, if this deposition were carried out after implantation, the thermal budget produced by this deposition would risk initiating a blistering phenomenon, thus preventing the subsequent bonding and transfer steps. To deposit the bonding layer after implantation, the thermal budgets produced by the deposition and preparation of the bonding layer surface (planahzation, polishing) must be reduced to not initiate blistering, which limits the feasibility of the process. It is known that for this purpose these thermal budgets must not exceed 10% of the thermal fracture budget in the case of silicon, for example. The latter particularly depends on the species implanted, the implantation conditions and the substrate implanted.
Beyond the thickness of the Ill/N material to embrittle, the ions implanted must thus also traverse the bonding layer. Consequently, the implantation energy must be increased to take this additional thickness into account.
Because of this, the energy necessary for implantation becomes a limiting parameter for the implantation of helium ions- helium ions necessitating, at an equal implantation depth, more energy than that of hydrogen ions.
Thus, in the case of a bonding layer on the order of 500 nm, if one wishes to transfer a thin film of GaN with a thickness on the order of 400 nm, the energy necessary to implant helium ions becomes greater than 200 keV. In fact, the transfer of a film of approximately 480 nm is carried out thanks to an implantation dose of helium ions of 2.1017 atoms/cm2 with an energy of 210 KeV followed by an implantation dose of hydrogen ions of 2.1017 atoms/cm2 with an energy of 120KeV.
Now, the implantation devices most commonly used to implant such high doses (i.e., high current implanters) do not deliver energy over 120 keV, or cannot be optimized in terms of current and energy contamination in such an energy range.
If one wishes to transfer a thicker film to be able to eliminate the damaged material on the transferred film, the energy necessary for implantation of helium ions will therefore make industrialization of the co-implantation process very difficult. Another problem resulting from the usual layer transfer process is that the fracture annealing carried out in view of the transfer may, in the case where the materials assembled present significant thermal expansion coefficient differences, cause separations at the interface or the rupture of materials.
Thus, one of the objects of the invention is to propose a new process for transferring a thin layer from a source substrate to a support substrate, that allows, at a constant transferred thickness, the use of a lower implantation energy than in known processes, for any type of material utilized.
This process must be able to be industrialized by means of devices that are currently available in trade. The invention must also enable the energy budget to provide to perform the fracture and the transfer of the thin film after ionic species implantation to be reduced.
BRIEF DESCRIPTION OF THE INVENTION
In conformance with the invention, a method of transferring a layer, by formation of an embrittlement area in a source substrate to a support substrate, is proposed, including the successive steps of:
(a) formation of a bonding layer on the source substrate,
(b) implantation of ions from a first species in the source substrate through the bonding layer, so as to form said embrittlement area defining the layer to transfer,
(c) placing the bonding layer and the support substrate in close contact, (d) fracturing of the source substrate along the embrittlement area so as to transfer the layer to the support substrate, said process comprising, before step (a), the implantation of ions from a second species so as to form said embrittlement area in the source substrate.
According to a preferred embodiment, ions from the second species have a mass equal to or greater than that of ions from the first species.
In a particularly advantageous manner, the first species is hydrogen and the second species is helium.
According to other possible characteristics of the invention:
- the implantation energy of ions from the second species is less than or equal to that of the implantation of ions from the first species;
- the bonding layer is in SiO2 and/or silicon nitride;
- the bonding layer is formed over a thickness of 200 to 600 nm by low-pressure chemical vapor deposition (LPCVD) or in the presence of plasma (PECVD);
- before step (c) a thermal treatment of the bonding layer is carried out; - before step (c), planarization of the bonding layer until a roughness of less than
5 A RMS is carried out over a surface of 5 micrometers by 5 micrometers;
- before the implantation of ions from the second species, a protective layer is deposited over the surface of the source substrate;
- ions from the second species are implanted at the same depth as the ions from the first species;
- the transferred layer is in a Ill/N material and presents a thickness of between 50 and 900 nm, and the ions from the second species are helium ions implanted with an energy of less than or equal to 210 keV;
- the support substrate is chosen from among sapphire, silicon and silicon carbide;
- the material of the transferred layer is chosen from among the materials from the Ill/N group, such as GaN, InGaN, AIGaN, InAIGaN, silicon or germanium.
BRIEF DESCRIPTION OF THE DRAWINGS Other characteristics and advantages of the invention will emerge from the following detailed description, from the attached drawings in which:
Figure 1 schematically illustrates the implantation of helium ions in a source substrate;
Figure 2 represents the formation of a bonding layer on the implanted source substrate;
Figure 3 illustrates the implantation of hydrogen ions in the source substrate through the bonding layer;
Figure 4 illustrates the bonding of the source substrate on a support substrate; - Figure 5 illustrates the transfer of a layer from the source substrate to the support substrate.
DETAILED DESCRIPTION OF THE INVENTION
Generally, the process comprises the implantation of ions in the source substrate in two steps: the implantation of ions from a first species takes place conventionally after deposition of the bonding layer on the source substrate, but the formation of this bonding layer is preceded by the implantation of ions from a second ionic species.
The two implantation steps result in the forming of the same embrittlement zone which defines the layer to be transferred from the source substrate to the support substrate.
As we will see below, the two implanted species may be different, the ions from the first species preferably having a lower mass than those from the second; possibly, one may implant the same species of ions during the two steps.
The implantation parameters are the dose and energy contributed to the ionic species.
During implantation, the ions are not all implanted at the same depth, but according to an implantation profile (concentration as a function of depth) of the Gaussian type.
Average depth of implantation is understood to refer to the depth at which the concentration in implanted ions is maximum.
The person skilled in the art knows how to determine, according to the substrate undergoing implantation, the species to implant and the desired average depth of implantation, dose and species energy.
The layer to be transferred may be constituted of a Ill/N material, that is, a material comprising one or more elements from column III of the periodic table and nitrogen.
This may be a binary alloy such as AIN, GaN or BN. It may also be a ternary or quaternary alloy such as AIGaN, BGaN, InGaN, or InAIGaN.
It may also be silicon or germanium, or an insulant such as sapphire, tantalate or lithium niobate.
The source substrate may be bulk or composite, for example a compound of a sapphire support on which a Ill/N material such as GaN has been deposited or bonded.
The Ill/N materials may be polar, carrying out the implantation on one face rather than on another may be preferred. For example, GaN with hexagonal crystalline symmetry whose growth is carried out along the c axis is polar: it presents a face known as N and a face known as Ga.
As the Ga face would allow easier resumption of epitaxy, implanting and bonding the N face on the support substrate will be preferable so that the final composite structure presents the Ga face free for carrying out epitaxy.
The different steps of the process, in the case of the transfer of a layer of GaN, will now be described in more detail.
First implantation step: ions from the second species
With reference to Figure 1 , ions from the second species are implanted through the bare face of source substrate 10, this face not yet having been covered with the bonding layer. In a preferred, but not limiting, manner, ions from the second species are chosen so as to be heavier than those from the first species. Thus, the lightest ions are those that must traverse the bonding layer.
If the ions implanted after deposition of the bonding layer are hydrogen, the ions from the second species advantageously will be helium, which is a heavier species than hydrogen.
More generally, the most interesting species potentially are boron, nitrogen and the rare gases: Ne, Ar, Xe.
One may also contemplate the use of chemical elements, under their different forms of ionic species, such as Be, O, De, F, Kr, F, in mono-implantation or in co- implantation.
Alternately, the ions implanted during this first implantation step may be hydrogen ions as in the second step. Such a case is present when one may wish to transfer a very thick layer onto a substrate having a high thermal expansion coefficient differential with the material transferred.
The dose and energy of the ions are parametered so as to reach the desired depth in the source substrate, namely between 100 and 1000 nm depending on the thickness of the layer that one wishes to transfer. The energy necessary is less than that which would be necessary to also traverse the bonding layer. For example, the energy of an implantation of helium ions necessary for embrittlement of GaN at 500 nm of depth, carried out through a 500 nm layer of oxide is on the order of 210 KeV while it is on the order of 105 KeV in the absence of a bonding layer for the same implanted depth.
Implantation may thus be implemented by means of a conventional implanter on the market.
In addition, this first implantation step involves a dose that is sufficiently low so that it does not generate a risk of blistering during subsequent hot deposition of the bonding layer.
The average implantation depth 11 of ions from the first species defines the thickness of layer 12 to be transferred.
In the Ill/N materials, one preferably makes the average depth of implantation of ions from the two species match.
In the particular case of silicon, one may slightly shift the implantation profiles while allowing good crystalline quality fracturing. Before this first implantation step, one may advantageously form a protective layer, for example a layer of Si3N4 with a thickness of 20 to 50 nm (not represented) on the face of the source substrate that will have to undergo implantation.
Formation of the bonding layer
With reference to Figure 2, a bonding layer 20 is then deposited on the source substrate 10, on the face through which the implantation of ions from the second species has been carried out.
For this purpose, one may implement deposition techniques such as plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD). This deposition is carried out before the second implantation step (i.e., ions from the first species) so that the thermal budget produced by this deposition does not initiate a blistering phenomenon before the fracturing thermal budget is applied to the source substrate bonded on the support substrate.
Bonding layer 20 is, for example, in SiO2 or in silicon nitride (Si3N4). Its thickness typically is between 50 and 3000 nm and preferably between 200 and 600 nm.
A layer of silicon nitride and a layer of silicon oxide may be combined for better bonding (in fact, the Ill/N material adheres to a layer of Si3N4 so well, that it is sometimes called a grip layer).
Deposition of silicon oxide may be carried out by the LPCVD technique (for example, a thickness of 500 nm is deposited at 800°C for 4 hours) or by PECVD (with this technique, a thickness of 500 nm is deposited at 300°C for 40 minutes).
These silicon oxides deposited are less stable at temperature than thermal oxides (obtained by thermal oxidation of the silicon contained in the substrate, such as silicon or SiC), which are denser.
A thermal densification treatment may thus be applied after their deposition to make them denser and to stabilize them. This thermal densification treatment may be carried out after the implantation of ions from the first species. In every case, applying thermal budgets, which would lead to blistering of the implanted substrate, during this deposition or thermal densification treatment step, will be avoided.
Second implantation step: ions from the first species
With reference to Figure 3, ions from the first species are implanted in the source substrate 10, through the bonding layer 20, under conditions that allow the desired depth to be reached - more precisely, to form the same embrittlement area as the one already formed by the implantation of the ions of the second species.
It is specified that according to the source substrate, this depth may be the same or a slightly different depth from the average depth 11 of ions from the second species.
Because of the additional thickness of the bonding layer to cross, the implantation energy of ions from the first species is equal to or greater than the energy implemented during the first implantation.
The dose of ions implanted during this second step supplements the dose implanted during the first step, in order to allow fracturing.
It is then possible to proceed with planarization and polishing of the bonding layer 20 to obtain better adhesion at the interface of the substrates to assemble, while remaining careful to not cause blistering of the substrate implanted.
Alternately, one may carry out this planarization step before this second implantation step.
During this planarization, one typically aims to obtain a roughness of less than 5 A RMS over a surface of 5 micrometers by 5 micrometers.
Transfer of the thin layer
Then the transfer process is continued conventionally: as illustrated in Figure 4, the source substrate 10, thus embrittled, is put in close contact with a support substrate 30 so as to obtain bonding by molecular adhesion, the bonding layer 20 being situated at the interface.
The support substrate 30 may also be covered by a bonding layer, for example in silicon oxide and/or silicon nitride (not represented) and may be activated by plasma.
If necessary, steps for preparing the surface before putting it in contact with the bonding layer 20 of the source substrate 10 (i.e., planarization and polishing) may also be carried out.
The support substrate 30 may be constituted of sapphire, SiC, Si, MgO, GaAs, ZnO or an alloy mainly constituted of Ni, Cr, Mo, W in defined proportions to obtain a chosen thermal expansion coefficient or even of any material utilized in optical, optoelectronic or microelectronic applications.
Fracture annealing is then applied to complete the thin layer 12 transfer.
The fracture may be facilitated by the provision of an additional energy budget such as a mechanical aid, for example, the insertion of a blade at the embrittled interface 11. The structure represented in Figure 5 is then obtained.
The sequence of co-implantation and bonding layer formation steps thus allows implantation energies that are lower than those of a standard implantation process to be implemented. Another advantage provided by the invention resides in that the thermal budget produced by bonding layer deposition after the implantation of ions from the second species participates in the total energy budget to produce to carry out fracturing in view of the thin layer 12 transfer.
Thus, the extra energy to produce during fracture annealing is less than in the case of deposition of the bonding layer before co-implantation.
The result is the opportunity to use a lower fracture annealing temperature and therefore to be able to use materials presenting very different thermal expansion coefficients (TEC), such as a thin layer 12 of GaN transferred onto a support substrate 30, without risking separation at the bonding interface or breaking of the materials.
Example of embodiment of the invention
A GaN substrate is taken as the source substrate.
On face N of the substrate, a protective layer with a thickness of 20 nm is deposited. This protective layer serves to protect the surface of the material from contaminations, particularly metal or carbon contaminations, linked to the implantation of ionic species. As the thickness of this layer is very thin, it has little impact on the implantation energy of helium ions. This layer may be constituted of silicon nitride or SiO2.
Next, helium ions are implanted at a dose on the order of 0.8 to 1.1017 atoms/cm2 and energy of between 80 and 120 keV, preferably 105 keV, to reach an average implantation depth of between 300 and 500 nm, preferably on the order of 500 nm, through the face N of substrate 10 in GaN covered by the protective layer.
The protective layer is removed following a suitable technique according to the nature of this layer - typically, if the protective layer is in SiO2, diluted hydrofluoric acid (HF) is used.
A bonding layer 20 with a thickness on the order of 500 nm is deposited over the released surface. This layer may be chosen from among different materials such as SiO2 and silicon nitride.
Hydrogen ions are then implanted at a dose on the order of 3.1017 atoms/cm2 and energy on the order of 120 KeV to reach an average implantation thickness on the order of 500 nm in the source substrate of GaN through the bonding layer.
The face through which implantation takes place is then put in close contact with the surface of a support substrate at ambient temperature. The support substrate may also be covered previously with a bonding layer. The surfaces to be bonded may have been prepared by conventional polishing, plasma exposure and/or cleaning methods to improve adhesion.
The support substrate may, for example, be in sapphire.
Fracture annealing is performed, for example by a temperature incline from ambient temperature to approximately 300°C, an incline during which a fracture at the level of the embrittled layer is obtained. A composite structure is then obtained constituted of a thin layer 12 of GaN with a thickness on the order of 500 nm bonded onto a support 30 in sapphire.
The surface of this structure is then prepared for subsequent epitaxy. In particular, one may remove the area damaged by the implantation/fracture steps of the GaN at the surface of the composite structure, so as to expose a suitable area of the transferred layer.
The invention for which an application for the transfer of a layer of GaN has been illustrated is applicable for the transfer of layers by co-implantation, regardless of the nature of the material (for example: silicon, germanium, lithium tantalite, etc.).
Claims
1. A method for transferring a layer (12) by the formation of an embhttlement area in a source substrate (10) onto a support substrate (30), comprising the successive steps of:
(a) formation of a bonding layer (20) on the source substrate (10),
(b) implantation of ions from a first species in the source substrate (10) through the bonding layer (20), so as to form an embrittlement area defining the layer (12) to transfer,
(c) placement of the bonding layer (20) in close contact with the support substrate (30),
(d) fracturing of the source substrate (10) along the embrittlement area so as to transfer the layer (12) onto the support substrate (30), characterized in that the method comprises, before step (a), the implantation of ions from a second species in the source substrate (10) so as to form said embrittlement area.
2. The method according to claim 1 , characterized in that the ions from the second species have a mass equal to or greater than that of ions from the first species.
3. The method according to claim 2, characterized in that the first species is hydrogen and the second species is helium.
4. The method according to one of claims 2 or 3, characterized in that the implantation energy of ions from the second species is less than or equal to that of the implantation of ions from the first species.
5. The method according to one of claims 1 to 4, characterized in that the bonding layer (20) is in SiO2 and/or silicon nitride.
6. The method according to claim 5, characterized in that the bonding layer (20) is formed with a thickness of 200 to 600 nm by low-pressure chemical vapor deposition (LPCVD) or in the presence of plasma (PECVD).
7. The method according to one of claims 1 to 6, characterized in that before step (c), a thermal treatment of the bonding layer (20) is carried out.
8. The method according to one of claims 1 to 7, characterized in that before step (c), planahzation of the bonding layer (20) until a roughness of less than 5 A
RMS over a surface of 5 micrometers by 5 micrometers is performed.
9. The method according to one of claims 1 to 8, characterized in that before the implantation of ions from the second species, a protective layer is deposited over the surface of the source substrate (10).
10. The method according to one of claims 1 to 9, characterized in that the ions from the second species are implanted at the same depth as the ions from the first species.
11. The method according to one of claims 1 to 10, characterized in that the layer (12) transferred is in a Ill/N material and presents a thickness of between 50 and 900 nm, and in that the ions from the second species are helium ions implanted with an energy of less than or equal to 210 keV.
12. The method according to one of claims 1 to 11 , characterized in that the support substrate (30) is chosen from among sapphire, silicon and silicon carbide.
13. The method according to one of claims 1 to 12, characterized in that the material of the layer (12) transferred is chosen from among group Ill/N materials, such as GaN, InGaN, AIGaN, InAIGaN, silicon or germanium.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0851176A FR2928031B1 (en) | 2008-02-25 | 2008-02-25 | METHOD OF TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE. |
| FR0851176 | 2008-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009106177A1 true WO2009106177A1 (en) | 2009-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2008/066854 WO2009106177A1 (en) | 2008-02-25 | 2008-12-05 | Method of transferring a thin layer onto a support substrate |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2928031B1 (en) |
| WO (1) | WO2009106177A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013149853A (en) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | Method for manufacturing substrate with thin film |
| WO2017207390A1 (en) * | 2016-05-30 | 2017-12-07 | Soitec | Method for fabrication of a semiconductor structure including an interposer free from any through via |
| US11128277B2 (en) * | 2016-04-28 | 2021-09-21 | Shin-Etsu Chemical Co., Ltd. | Method for producing composite wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040262686A1 (en) * | 2003-06-26 | 2004-12-30 | Mohamad Shaheen | Layer transfer technique |
| WO2006032948A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Method for obtaining a thin layer by implementing co-implantation and subsequent implantation |
| WO2006032947A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Thin layer transfer method wherein a co-implantation step is performed according to conditions avaoiding blisters formation and limiting roughness |
| WO2007019277A2 (en) * | 2005-08-03 | 2007-02-15 | California Institute Of Technology | Method of forming semiconductor layers on handle substrates |
| EP1835534A1 (en) * | 2006-03-13 | 2007-09-19 | S.O.I.Tec Silicon on Insulator Technologies | Method of manufacturing a thin film |
-
2008
- 2008-02-25 FR FR0851176A patent/FR2928031B1/en not_active Expired - Fee Related
- 2008-12-05 WO PCT/EP2008/066854 patent/WO2009106177A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040262686A1 (en) * | 2003-06-26 | 2004-12-30 | Mohamad Shaheen | Layer transfer technique |
| WO2006032948A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Method for obtaining a thin layer by implementing co-implantation and subsequent implantation |
| WO2006032947A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Thin layer transfer method wherein a co-implantation step is performed according to conditions avaoiding blisters formation and limiting roughness |
| WO2007019277A2 (en) * | 2005-08-03 | 2007-02-15 | California Institute Of Technology | Method of forming semiconductor layers on handle substrates |
| EP1835534A1 (en) * | 2006-03-13 | 2007-09-19 | S.O.I.Tec Silicon on Insulator Technologies | Method of manufacturing a thin film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013149853A (en) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | Method for manufacturing substrate with thin film |
| US11128277B2 (en) * | 2016-04-28 | 2021-09-21 | Shin-Etsu Chemical Co., Ltd. | Method for producing composite wafer |
| WO2017207390A1 (en) * | 2016-05-30 | 2017-12-07 | Soitec | Method for fabrication of a semiconductor structure including an interposer free from any through via |
| US11114314B2 (en) | 2016-05-30 | 2021-09-07 | Soitec | Method for fabrication of a semiconductor structure including an interposer free from any through via |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2928031A1 (en) | 2009-08-28 |
| FR2928031B1 (en) | 2010-06-11 |
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