WO2008156767A3 - Error correction scheme for non-volatile memory - Google Patents

Error correction scheme for non-volatile memory Download PDF

Info

Publication number
WO2008156767A3
WO2008156767A3 PCT/US2008/007557 US2008007557W WO2008156767A3 WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3 US 2008007557 W US2008007557 W US 2008007557W WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3
Authority
WO
WIPO (PCT)
Prior art keywords
error correcting
volatile memory
correcting code
data
code
Prior art date
Application number
PCT/US2008/007557
Other languages
French (fr)
Other versions
WO2008156767A2 (en
Inventor
Yasushi Kasa
Original Assignee
Spansion Llc
Yasushi Kasa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc, Yasushi Kasa filed Critical Spansion Llc
Publication of WO2008156767A2 publication Critical patent/WO2008156767A2/en
Publication of WO2008156767A3 publication Critical patent/WO2008156767A3/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20Employing a main memory using a specific memory technology
    • G06F2212/202Non-volatile memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the error correcting code, and a read section for correcting the data stored in the data area based on the error correcting code upon the detecting of the generation of the error correcting code by the detector circuit, where the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level.
PCT/US2008/007557 2007-06-15 2008-06-16 Error correction scheme for non-volatile memory WO2008156767A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007158750A JP2008310896A (en) 2007-06-15 2007-06-15 Nonvolatile memory device, nonvolatile memory system, and method for controlling nonvolatile memory device
JP2007-158750 2007-06-15

Publications (2)

Publication Number Publication Date
WO2008156767A2 WO2008156767A2 (en) 2008-12-24
WO2008156767A3 true WO2008156767A3 (en) 2009-04-16

Family

ID=39938254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/007557 WO2008156767A2 (en) 2007-06-15 2008-06-16 Error correction scheme for non-volatile memory

Country Status (4)

Country Link
US (3) US8225172B2 (en)
JP (1) JP2008310896A (en)
TW (1) TWI378464B (en)
WO (1) WO2008156767A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4905510B2 (en) * 2009-06-29 2012-03-28 富士通株式会社 Storage control device and data recovery method for storage device
JP2011108306A (en) * 2009-11-16 2011-06-02 Sony Corp Nonvolatile memory and memory system
US8694862B2 (en) * 2012-04-20 2014-04-08 Arm Limited Data processing apparatus using implicit data storage data storage and method of implicit data storage
US8996951B2 (en) 2012-11-15 2015-03-31 Elwha, Llc Error correction with non-volatile memory on an integrated circuit
US20160132388A1 (en) * 2013-06-14 2016-05-12 Samsung Electronics Co., Ltd Semiconductor memory device and ecc method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119245A (en) * 1997-08-06 2000-09-12 Oki Electric Industry Co., Ltd. Semiconductor storage device and method of controlling it
US20040264254A1 (en) * 2003-06-24 2004-12-30 Micron Technology, Inc. Erase block data splitting

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69034227T2 (en) * 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom system with block deletion
US5583650A (en) * 1992-09-01 1996-12-10 Hitachi America, Ltd. Digital recording and playback device error correction methods and apparatus for use with trick play data
WO1997032253A1 (en) * 1996-02-29 1997-09-04 Hitachi, Ltd. Semiconductor memory device having faulty cells
JP2001297038A (en) * 2000-04-11 2001-10-26 Toshiba Corp Data storage device, recording medium, and recording medium control method
JP4373615B2 (en) * 2001-01-25 2009-11-25 富士通マイクロエレクトロニクス株式会社 Initial bad block marking method
CN1288658C (en) * 2002-04-25 2006-12-06 三洋电机株式会社 Data processing apparatus
JP4129381B2 (en) * 2002-09-25 2008-08-06 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
JP4073799B2 (en) * 2003-02-07 2008-04-09 株式会社ルネサステクノロジ Memory system
JP2004253099A (en) * 2003-02-21 2004-09-09 Toshiba Corp Sync frame structure, information storage medium, information recording method, information reproducing method, and information reproducing device
JP2004320286A (en) 2003-04-15 2004-11-11 Nikon Gijutsu Kobo:Kk Digital camera
US20040207743A1 (en) 2003-04-15 2004-10-21 Nikon Corporation Digital camera system
GB0315063D0 (en) * 2003-06-27 2003-07-30 Ibm Memory devices
JP2005293724A (en) * 2004-03-31 2005-10-20 Sanyo Electric Co Ltd Detection method for error point, error detection circuit using its method, error correction circuit, and reproducing device
US7409623B2 (en) * 2004-11-04 2008-08-05 Sigmatel, Inc. System and method of reading non-volatile computer memory
US7561790B2 (en) 2004-12-28 2009-07-14 Fujinon Corporation Auto focus system
JP2006267221A (en) 2005-03-22 2006-10-05 Fujinon Corp Auto focus system
US7426623B2 (en) * 2005-01-14 2008-09-16 Sandisk Il Ltd System and method for configuring flash memory partitions as super-units
JP2007025595A (en) 2005-07-21 2007-02-01 Fujinon Corp Automatic focusing device
JP4528242B2 (en) * 2005-10-20 2010-08-18 富士通セミコンダクター株式会社 Memory system and memory system operation method
US7810017B2 (en) * 2006-03-20 2010-10-05 Micron Technology, Inc. Variable sector-count ECC
JP2007311861A (en) 2006-05-16 2007-11-29 Fujifilm Corp Photographic apparatus and method
US8051358B2 (en) * 2007-07-06 2011-11-01 Micron Technology, Inc. Error recovery storage along a nand-flash string
JP2010097167A (en) 2008-09-22 2010-04-30 Fujinon Corp Auto focus device
JP2010096962A (en) 2008-10-16 2010-04-30 Fujinon Corp Auto focus system with af frame auto-tracking function
JP5474528B2 (en) 2009-12-25 2014-04-16 富士フイルム株式会社 Auto focus system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119245A (en) * 1997-08-06 2000-09-12 Oki Electric Industry Co., Ltd. Semiconductor storage device and method of controlling it
US20040264254A1 (en) * 2003-06-24 2004-12-30 Micron Technology, Inc. Erase block data splitting

Also Published As

Publication number Publication date
US20120266047A1 (en) 2012-10-18
US20130268823A1 (en) 2013-10-10
US8225172B2 (en) 2012-07-17
TWI378464B (en) 2012-12-01
JP2008310896A (en) 2008-12-25
WO2008156767A2 (en) 2008-12-24
US20090158123A1 (en) 2009-06-18
US8769377B2 (en) 2014-07-01
US8438460B2 (en) 2013-05-07
TW200910365A (en) 2009-03-01

Similar Documents

Publication Publication Date Title
EP2595062A3 (en) Storage device, storage control device, data transfer integrated circuit, and storage control method
WO2010078167A3 (en) Improved error correction in a solid state disk
EP2704012A8 (en) Adaptive error correction for non-volatile memories
WO2008086237A3 (en) Codes for limited magnitude asymmetric errors in flash memories
WO2009064791A3 (en) Method and apparatus of automatically selecting error correction algorithms
WO2007083303A3 (en) A method of arranging data in a multi-level cell memory device
TW201205587A (en) Data input / output control device and semiconductor memory device system
WO2009009076A3 (en) Error correction for memory
WO2010076966A3 (en) Memory controller and memory management method
WO2011112354A3 (en) Sensing operations in a memory device
WO2011159806A3 (en) Apparatus, system, and method for providing error correction
WO2009139574A3 (en) Memory device and method of managing memory data error
WO2011090545A3 (en) Method and controller for performing a copy-back operation
WO2008156767A3 (en) Error correction scheme for non-volatile memory
WO2010093441A8 (en) Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard cmos logic process
JP2012079403A5 (en)
WO2009095902A3 (en) Systems and methods for handling immediate data errors in flash memory
WO2008133087A1 (en) Semiconductor storage device and its operation method
WO2011041047A3 (en) Home agent data and memory management
WO2007039087A3 (en) Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
WO2009072102A3 (en) System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices
TW200609735A (en) Volatile storage based power loss recovery mechanism
EP2248028A4 (en) Semiconductor storage device, method of controlling the same, and error correction system
TW200638423A (en) Nonvolatile ferroelectric memory device including failed cell correcting circuit
GB201308311D0 (en) Method and system for error management in a memory device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08794366

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 08794366

Country of ref document: EP

Kind code of ref document: A2