WO2008156767A3 - Error correction scheme for non-volatile memory - Google Patents
Error correction scheme for non-volatile memory Download PDFInfo
- Publication number
- WO2008156767A3 WO2008156767A3 PCT/US2008/007557 US2008007557W WO2008156767A3 WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3 US 2008007557 W US2008007557 W US 2008007557W WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- error correcting
- volatile memory
- correcting code
- data
- code
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/202—Non-volatile memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the error correcting code, and a read section for correcting the data stored in the data area based on the error correcting code upon the detecting of the generation of the error correcting code by the detector circuit, where the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007158750A JP2008310896A (en) | 2007-06-15 | 2007-06-15 | Nonvolatile memory device, nonvolatile memory system, and method for controlling nonvolatile memory device |
JP2007-158750 | 2007-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008156767A2 WO2008156767A2 (en) | 2008-12-24 |
WO2008156767A3 true WO2008156767A3 (en) | 2009-04-16 |
Family
ID=39938254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/007557 WO2008156767A2 (en) | 2007-06-15 | 2008-06-16 | Error correction scheme for non-volatile memory |
Country Status (4)
Country | Link |
---|---|
US (3) | US8225172B2 (en) |
JP (1) | JP2008310896A (en) |
TW (1) | TWI378464B (en) |
WO (1) | WO2008156767A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4905510B2 (en) * | 2009-06-29 | 2012-03-28 | 富士通株式会社 | Storage control device and data recovery method for storage device |
JP2011108306A (en) * | 2009-11-16 | 2011-06-02 | Sony Corp | Nonvolatile memory and memory system |
US8694862B2 (en) * | 2012-04-20 | 2014-04-08 | Arm Limited | Data processing apparatus using implicit data storage data storage and method of implicit data storage |
US8996951B2 (en) | 2012-11-15 | 2015-03-31 | Elwha, Llc | Error correction with non-volatile memory on an integrated circuit |
US20160132388A1 (en) * | 2013-06-14 | 2016-05-12 | Samsung Electronics Co., Ltd | Semiconductor memory device and ecc method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6119245A (en) * | 1997-08-06 | 2000-09-12 | Oki Electric Industry Co., Ltd. | Semiconductor storage device and method of controlling it |
US20040264254A1 (en) * | 2003-06-24 | 2004-12-30 | Micron Technology, Inc. | Erase block data splitting |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69034227T2 (en) * | 1989-04-13 | 2007-05-03 | Sandisk Corp., Sunnyvale | EEprom system with block deletion |
US5583650A (en) * | 1992-09-01 | 1996-12-10 | Hitachi America, Ltd. | Digital recording and playback device error correction methods and apparatus for use with trick play data |
WO1997032253A1 (en) * | 1996-02-29 | 1997-09-04 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
JP2001297038A (en) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | Data storage device, recording medium, and recording medium control method |
JP4373615B2 (en) * | 2001-01-25 | 2009-11-25 | 富士通マイクロエレクトロニクス株式会社 | Initial bad block marking method |
CN1288658C (en) * | 2002-04-25 | 2006-12-06 | 三洋电机株式会社 | Data processing apparatus |
JP4129381B2 (en) * | 2002-09-25 | 2008-08-06 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory device |
JP4073799B2 (en) * | 2003-02-07 | 2008-04-09 | 株式会社ルネサステクノロジ | Memory system |
JP2004253099A (en) * | 2003-02-21 | 2004-09-09 | Toshiba Corp | Sync frame structure, information storage medium, information recording method, information reproducing method, and information reproducing device |
JP2004320286A (en) | 2003-04-15 | 2004-11-11 | Nikon Gijutsu Kobo:Kk | Digital camera |
US20040207743A1 (en) | 2003-04-15 | 2004-10-21 | Nikon Corporation | Digital camera system |
GB0315063D0 (en) * | 2003-06-27 | 2003-07-30 | Ibm | Memory devices |
JP2005293724A (en) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | Detection method for error point, error detection circuit using its method, error correction circuit, and reproducing device |
US7409623B2 (en) * | 2004-11-04 | 2008-08-05 | Sigmatel, Inc. | System and method of reading non-volatile computer memory |
US7561790B2 (en) | 2004-12-28 | 2009-07-14 | Fujinon Corporation | Auto focus system |
JP2006267221A (en) | 2005-03-22 | 2006-10-05 | Fujinon Corp | Auto focus system |
US7426623B2 (en) * | 2005-01-14 | 2008-09-16 | Sandisk Il Ltd | System and method for configuring flash memory partitions as super-units |
JP2007025595A (en) | 2005-07-21 | 2007-02-01 | Fujinon Corp | Automatic focusing device |
JP4528242B2 (en) * | 2005-10-20 | 2010-08-18 | 富士通セミコンダクター株式会社 | Memory system and memory system operation method |
US7810017B2 (en) * | 2006-03-20 | 2010-10-05 | Micron Technology, Inc. | Variable sector-count ECC |
JP2007311861A (en) | 2006-05-16 | 2007-11-29 | Fujifilm Corp | Photographic apparatus and method |
US8051358B2 (en) * | 2007-07-06 | 2011-11-01 | Micron Technology, Inc. | Error recovery storage along a nand-flash string |
JP2010097167A (en) | 2008-09-22 | 2010-04-30 | Fujinon Corp | Auto focus device |
JP2010096962A (en) | 2008-10-16 | 2010-04-30 | Fujinon Corp | Auto focus system with af frame auto-tracking function |
JP5474528B2 (en) | 2009-12-25 | 2014-04-16 | 富士フイルム株式会社 | Auto focus system |
-
2007
- 2007-06-15 JP JP2007158750A patent/JP2008310896A/en active Pending
-
2008
- 2008-06-09 TW TW097121367A patent/TWI378464B/en active
- 2008-06-16 US US12/139,650 patent/US8225172B2/en active Active
- 2008-06-16 WO PCT/US2008/007557 patent/WO2008156767A2/en active Application Filing
-
2012
- 2012-06-22 US US13/531,282 patent/US8438460B2/en active Active
-
2013
- 2013-05-03 US US13/886,507 patent/US8769377B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6119245A (en) * | 1997-08-06 | 2000-09-12 | Oki Electric Industry Co., Ltd. | Semiconductor storage device and method of controlling it |
US20040264254A1 (en) * | 2003-06-24 | 2004-12-30 | Micron Technology, Inc. | Erase block data splitting |
Also Published As
Publication number | Publication date |
---|---|
US20120266047A1 (en) | 2012-10-18 |
US20130268823A1 (en) | 2013-10-10 |
US8225172B2 (en) | 2012-07-17 |
TWI378464B (en) | 2012-12-01 |
JP2008310896A (en) | 2008-12-25 |
WO2008156767A2 (en) | 2008-12-24 |
US20090158123A1 (en) | 2009-06-18 |
US8769377B2 (en) | 2014-07-01 |
US8438460B2 (en) | 2013-05-07 |
TW200910365A (en) | 2009-03-01 |
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