WO2008156767A3 - Error correction scheme for non-volatile memory - Google Patents

Error correction scheme for non-volatile memory Download PDF

Info

Publication number
WO2008156767A3
WO2008156767A3 PCT/US2008/007557 US2008007557W WO2008156767A3 WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3 US 2008007557 W US2008007557 W US 2008007557W WO 2008156767 A3 WO2008156767 A3 WO 2008156767A3
Authority
WO
WIPO (PCT)
Prior art keywords
error correcting
volatile memory
correcting code
data
code
Prior art date
Application number
PCT/US2008/007557
Other languages
French (fr)
Other versions
WO2008156767A2 (en
Inventor
Yasushi Kasa
Original Assignee
Spansion Llc
Yasushi Kasa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc, Yasushi Kasa filed Critical Spansion Llc
Publication of WO2008156767A2 publication Critical patent/WO2008156767A2/en
Publication of WO2008156767A3 publication Critical patent/WO2008156767A3/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the error correcting code, and a read section for correcting the data stored in the data area based on the error correcting code upon the detecting of the generation of the error correcting code by the detector circuit, where the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level.
PCT/US2008/007557 2007-06-15 2008-06-16 Error correction scheme for non-volatile memory WO2008156767A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007158750A JP2008310896A (en) 2007-06-15 2007-06-15 Nonvolatile memory device, nonvolatile memory system, and method for controlling nonvolatile memory device
JP2007-158750 2007-06-15

Publications (2)

Publication Number Publication Date
WO2008156767A2 WO2008156767A2 (en) 2008-12-24
WO2008156767A3 true WO2008156767A3 (en) 2009-04-16

Family

ID=39938254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/007557 WO2008156767A2 (en) 2007-06-15 2008-06-16 Error correction scheme for non-volatile memory

Country Status (4)

Country Link
US (3) US8225172B2 (en)
JP (1) JP2008310896A (en)
TW (1) TWI378464B (en)
WO (1) WO2008156767A2 (en)

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JP4905510B2 (en) * 2009-06-29 2012-03-28 富士通株式会社 Storage control device and data recovery method for storage device
JP2011108306A (en) * 2009-11-16 2011-06-02 Sony Corp Nonvolatile memory and memory system
US8694862B2 (en) * 2012-04-20 2014-04-08 Arm Limited Data processing apparatus using implicit data storage data storage and method of implicit data storage
US8996951B2 (en) 2012-11-15 2015-03-31 Elwha, Llc Error correction with non-volatile memory on an integrated circuit
US20160132388A1 (en) * 2013-06-14 2016-05-12 Samsung Electronics Co., Ltd Semiconductor memory device and ecc method thereof

Citations (2)

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US20040264254A1 (en) * 2003-06-24 2004-12-30 Micron Technology, Inc. Erase block data splitting

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US5583650A (en) * 1992-09-01 1996-12-10 Hitachi America, Ltd. Digital recording and playback device error correction methods and apparatus for use with trick play data
WO1997032253A1 (en) * 1996-02-29 1997-09-04 Hitachi, Ltd. Semiconductor memory device having faulty cells
JP2001297038A (en) * 2000-04-11 2001-10-26 Toshiba Corp Data storage device, recording medium, and recording medium control method
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JP2004253099A (en) * 2003-02-21 2004-09-09 Toshiba Corp Sync frame structure, information storage medium, information recording method, information reproducing method, and information reproducing device
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JP2005293724A (en) * 2004-03-31 2005-10-20 Sanyo Electric Co Ltd Detection method for error point, error detection circuit using its method, error correction circuit, and reproducing device
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119245A (en) * 1997-08-06 2000-09-12 Oki Electric Industry Co., Ltd. Semiconductor storage device and method of controlling it
US20040264254A1 (en) * 2003-06-24 2004-12-30 Micron Technology, Inc. Erase block data splitting

Also Published As

Publication number Publication date
US20120266047A1 (en) 2012-10-18
US20130268823A1 (en) 2013-10-10
US8225172B2 (en) 2012-07-17
TWI378464B (en) 2012-12-01
JP2008310896A (en) 2008-12-25
WO2008156767A2 (en) 2008-12-24
US20090158123A1 (en) 2009-06-18
US8769377B2 (en) 2014-07-01
US8438460B2 (en) 2013-05-07
TW200910365A (en) 2009-03-01

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