WO2008153124A1 - Semiconductor device and method for driving the same - Google Patents

Semiconductor device and method for driving the same Download PDF

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Publication number
WO2008153124A1
WO2008153124A1 PCT/JP2008/060838 JP2008060838W WO2008153124A1 WO 2008153124 A1 WO2008153124 A1 WO 2008153124A1 JP 2008060838 W JP2008060838 W JP 2008060838W WO 2008153124 A1 WO2008153124 A1 WO 2008153124A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
semiconductor device
voltage value
driving
voltage
Prior art date
Application number
PCT/JP2008/060838
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Sunamura
Kimihiko Ito
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009519315A priority Critical patent/JP5201138B2/en
Publication of WO2008153124A1 publication Critical patent/WO2008153124A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

An operational problem of conventional variable resistance elements (ReRAMs), i.e., unstableness of setting/resetting operation when the variable resistance element is to be set or reset by continuously applying signals of a prescribed voltage for a prescribed period, is solved. A semiconductor device which can perform stable, sure and high-speed setting/resetting operation, and a method for driving such semiconductor device are provided. A variable resistor varies to be in a first state and in a second state having a resistivity lower than that in the first state, in accordance with voltage application. A waveform wherein a first voltage value corresponding to the first state and a second voltage value having an absolute value smaller than that of the first voltage value are alternately transited is applied to the variable resistor.
PCT/JP2008/060838 2007-06-15 2008-06-13 Semiconductor device and method for driving the same WO2008153124A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009519315A JP5201138B2 (en) 2007-06-15 2008-06-13 Semiconductor device and driving method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-158938 2007-06-15
JP2007158938 2007-06-15

Publications (1)

Publication Number Publication Date
WO2008153124A1 true WO2008153124A1 (en) 2008-12-18

Family

ID=40129727

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060838 WO2008153124A1 (en) 2007-06-15 2008-06-13 Semiconductor device and method for driving the same

Country Status (2)

Country Link
JP (1) JP5201138B2 (en)
WO (1) WO2008153124A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010211895A (en) * 2009-03-12 2010-09-24 Toshiba Corp Nonvolatile semiconductor memory device
JP2011090755A (en) * 2009-10-26 2011-05-06 Nec Corp Element control circuit, switching element, and element control method
WO2011121971A1 (en) * 2010-03-30 2011-10-06 パナソニック株式会社 Non-volatile storage device and method for writing to non-volatile storage device
WO2012132341A1 (en) * 2011-03-25 2012-10-04 パナソニック株式会社 Method for writing to variable-resistance type non-volatile element and storage device
WO2013046643A1 (en) * 2011-09-28 2013-04-04 パナソニック株式会社 Method for writing data in nonvolatile storage element, and nonvolatile storage device
US9142289B2 (en) 2011-06-13 2015-09-22 Panasonic Intellectual Property Management Co., Ltd. Method for driving variable resistance element, and nonvolatile memory device
JP2021504869A (en) * 2017-11-30 2021-02-15 マイクロン テクノロジー，インク． Memory cell behavior

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007514265A (en) * 2003-12-26 2007-05-31 松下電器産業株式会社 Memory element, memory circuit, semiconductor integrated circuit
JP2007515026A (en) * 2003-12-18 2007-06-07 松下電器産業株式会社 INITIALIZATION METHOD FOR RESISTANCE CHANGE MATERIAL, STORAGE ELEMENT USING RESISTANCE CHANGE MATERIAL, NONVOLATILE MEMORY CIRCUIT USING VARIABLE RESISTANT
JP2008198275A (en) * 2007-02-09 2008-08-28 Sharp Corp Nonvolatile semiconductor storage device and its rewrite method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2407707A (en) * 2002-09-11 2005-05-04 Ovonyx Inc Programming a phase-change material memory
JP4365737B2 (en) * 2004-06-30 2009-11-18 シャープ株式会社 Method of driving variable resistance element and storage device
JP4884784B2 (en) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device and semiconductor device
JP4701862B2 (en) * 2005-06-22 2011-06-15 ソニー株式会社 Storage device initialization method
JP2007294592A (en) * 2006-04-24 2007-11-08 Sony Corp Method for driving storage device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007515026A (en) * 2003-12-18 2007-06-07 松下電器産業株式会社 INITIALIZATION METHOD FOR RESISTANCE CHANGE MATERIAL, STORAGE ELEMENT USING RESISTANCE CHANGE MATERIAL, NONVOLATILE MEMORY CIRCUIT USING VARIABLE RESISTANT
JP2007514265A (en) * 2003-12-26 2007-05-31 松下電器産業株式会社 Memory element, memory circuit, semiconductor integrated circuit
JP2008198275A (en) * 2007-02-09 2008-08-28 Sharp Corp Nonvolatile semiconductor storage device and its rewrite method

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8199557B2 (en) 2009-03-12 2012-06-12 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of resetting the same
JP2010211895A (en) * 2009-03-12 2010-09-24 Toshiba Corp Nonvolatile semiconductor memory device
US8537598B2 (en) 2009-03-12 2013-09-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for resetting the same
JP2011090755A (en) * 2009-10-26 2011-05-06 Nec Corp Element control circuit, switching element, and element control method
US8787071B2 (en) 2010-03-30 2014-07-22 Panasonic Corporation Nonvolatile storage device and method for writing into the same
CN102422361A (en) * 2010-03-30 2012-04-18 松下电器产业株式会社 Non-volatile storage device and method for writing to non-volatile storage device
JP4838399B2 (en) * 2010-03-30 2011-12-14 パナソニック株式会社 Nonvolatile memory device and method of writing to nonvolatile memory device
US8593853B2 (en) 2010-03-30 2013-11-26 Panasonic Corporation Nonvolatile storage device and method for writing into the same
WO2011121971A1 (en) * 2010-03-30 2011-10-06 パナソニック株式会社 Non-volatile storage device and method for writing to non-volatile storage device
WO2012132341A1 (en) * 2011-03-25 2012-10-04 パナソニック株式会社 Method for writing to variable-resistance type non-volatile element and storage device
CN102822901A (en) * 2011-03-25 2012-12-12 松下电器产业株式会社 Method for writing to variable-resistance type non-volatile element and storage device
JP5133471B2 (en) * 2011-03-25 2013-01-30 パナソニック株式会社 Resistance variable nonvolatile element writing method and memory device
US9378817B2 (en) 2011-03-25 2016-06-28 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element writing method and variable resistance nonvolatile memory device
US9142289B2 (en) 2011-06-13 2015-09-22 Panasonic Intellectual Property Management Co., Ltd. Method for driving variable resistance element, and nonvolatile memory device
WO2013046643A1 (en) * 2011-09-28 2013-04-04 パナソニック株式会社 Method for writing data in nonvolatile storage element, and nonvolatile storage device
JP2021504869A (en) * 2017-11-30 2021-02-15 マイクロン テクノロジー，インク． Memory cell behavior

Also Published As

Publication number Publication date
JPWO2008153124A1 (en) 2010-08-26
JP5201138B2 (en) 2013-06-05

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