WO2008132966A1 - Compound, acid generator, resist composition, and method for forming resist pattern - Google Patents

Compound, acid generator, resist composition, and method for forming resist pattern Download PDF

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Publication number
WO2008132966A1
WO2008132966A1 PCT/JP2008/056780 JP2008056780W WO2008132966A1 WO 2008132966 A1 WO2008132966 A1 WO 2008132966A1 JP 2008056780 W JP2008056780 W JP 2008056780W WO 2008132966 A1 WO2008132966 A1 WO 2008132966A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound
acid generator
resist composition
resist
forming
Prior art date
Application number
PCT/JP2008/056780
Other languages
French (fr)
Japanese (ja)
Inventor
Akiya Kawaue
Yoshiyuki Utsumi
Takehito Seo
Hideo Hada
Kotaro Endo
Daisuke Kawana
Yasuhiro Yoshii
Tsuyoshi Kurosawa
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007275654A external-priority patent/JP5238216B2/en
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Priority to US12/450,060 priority Critical patent/US8227169B2/en
Publication of WO2008132966A1 publication Critical patent/WO2008132966A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/09—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton
    • C07C309/10—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to an acyclic carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

Abstract

Disclosed is a compound which is suitable as an acid generator for resist compositions. Also disclosed are an acid generator composed of such a compound, a resist composition containing such an acid generator, and a method for forming a resist pattern using such a resist composition. The compound is represented by the following general formula (b1-12). R2-CH2-O-Y1-SO3-A+ (b1-12) [In the formula, R2 represents a monovalent aromatic organic group; Y1 represents an optionally fluorine-substituted alkylene group having 1-4 carbon atoms; and A+ represents a cation.]
PCT/JP2008/056780 2007-04-17 2008-04-04 Compound, acid generator, resist composition, and method for forming resist pattern WO2008132966A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/450,060 US8227169B2 (en) 2007-04-17 2008-04-04 Compound, acid generator, resist composition, and method of forming resist pattern

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007108453 2007-04-17
JP2007-108453 2007-04-17
JP2007-150586 2007-06-06
JP2007150586 2007-06-06
JP2007-275654 2007-10-23
JP2007275654A JP5238216B2 (en) 2007-04-17 2007-10-23 Compound, acid generator, resist composition, and resist pattern forming method

Publications (1)

Publication Number Publication Date
WO2008132966A1 true WO2008132966A1 (en) 2008-11-06

Family

ID=39925425

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056780 WO2008132966A1 (en) 2007-04-17 2008-04-04 Compound, acid generator, resist composition, and method for forming resist pattern

Country Status (1)

Country Link
WO (1) WO2008132966A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP2013147485A (en) * 2011-06-09 2013-08-01 Sumitomo Chemical Co Ltd Salt, resist composition and method for producing resist pattern
WO2013156509A2 (en) 2012-04-19 2013-10-24 Basf Se Sulfonium compounds, their preparation and use
US8580478B2 (en) 2010-02-24 2013-11-12 Basf Se Latent acids and their use

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040087690A1 (en) * 2002-11-01 2004-05-06 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP2005099456A (en) * 2003-09-25 2005-04-14 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same
JP2005099556A (en) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern using the same
JP2005122134A (en) * 2003-09-10 2005-05-12 Fuji Photo Film Co Ltd Photosensitive composition and pattern-forming method using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040087690A1 (en) * 2002-11-01 2004-05-06 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP2005122134A (en) * 2003-09-10 2005-05-12 Fuji Photo Film Co Ltd Photosensitive composition and pattern-forming method using the same
JP2005099456A (en) * 2003-09-25 2005-04-14 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same
JP2005099556A (en) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
US8580478B2 (en) 2010-02-24 2013-11-12 Basf Se Latent acids and their use
JP2013147485A (en) * 2011-06-09 2013-08-01 Sumitomo Chemical Co Ltd Salt, resist composition and method for producing resist pattern
WO2013156509A2 (en) 2012-04-19 2013-10-24 Basf Se Sulfonium compounds, their preparation and use
US9631048B2 (en) 2012-04-19 2017-04-25 Basf Se Sulfonium compounds, their preparation and use

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