WO2008111463A1 - Coating solution for film formation, method for production of the coating solution, and method for production of semiconductor device - Google Patents

Coating solution for film formation, method for production of the coating solution, and method for production of semiconductor device Download PDF

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Publication number
WO2008111463A1
WO2008111463A1 PCT/JP2008/053971 JP2008053971W WO2008111463A1 WO 2008111463 A1 WO2008111463 A1 WO 2008111463A1 JP 2008053971 W JP2008053971 W JP 2008053971W WO 2008111463 A1 WO2008111463 A1 WO 2008111463A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating solution
production
film formation
semiconductor device
cis
Prior art date
Application number
PCT/JP2008/053971
Other languages
French (fr)
Japanese (ja)
Inventor
Makoto Nakajima
Yasushi Sakaida
Hikaru Imamura
Satoshi Takei
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Publication of WO2008111463A1 publication Critical patent/WO2008111463A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Abstract

[PROBLEMS] To improve storage stability of a siloxane polymer-containing coating solution for film formation which has high curability but is poor in storage stability at room temperature. [MEANS FOR SOLVING PROBLEMS] Disclosed is a coating solution for film formation, which comprises a polymer having an Si-O-Si bond and a silanol group, an organic solvent represented by the formula: R1(OCH2CHCH3)nOCOCH3 [wherein R1 represents an alkyl group having 1 to 4 carbon atoms; and n represents a number of 1 or 2], an organic solvent which can dissolve therein a cis-type bivalent carboxylic acid (dicarboxylic acid), and a cis-type bivalent carboxylic acid (dicarboxylic acid).
PCT/JP2008/053971 2007-03-08 2008-03-05 Coating solution for film formation, method for production of the coating solution, and method for production of semiconductor device WO2008111463A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-058646 2007-03-08
JP2007058646A JP2010112966A (en) 2007-03-08 2007-03-08 Coating solution for film formation, method for production of the coating solution, and method for production of semiconductor device

Publications (1)

Publication Number Publication Date
WO2008111463A1 true WO2008111463A1 (en) 2008-09-18

Family

ID=39759406

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053971 WO2008111463A1 (en) 2007-03-08 2008-03-05 Coating solution for film formation, method for production of the coating solution, and method for production of semiconductor device

Country Status (3)

Country Link
JP (1) JP2010112966A (en)
TW (1) TW200903173A (en)
WO (1) WO2008111463A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532981A (en) * 2009-07-31 2012-12-20 エーピーエム インコーポレイテッド Film-forming composition and film to which the composition is applied
WO2014097993A1 (en) * 2012-12-18 2014-06-26 日産化学工業株式会社 Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
JP2015216368A (en) * 2014-04-21 2015-12-03 Jsr株式会社 Composition for bases, and self-structuring lithography process
KR101833208B1 (en) 2010-10-22 2018-04-13 닛산 가가쿠 고교 가부시키 가이샤 Composition for forming silicon-containing resist underlayer film, which contains fluorine-containing additive

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011087931A1 (en) 2011-12-07 2013-06-13 Wacker Chemie Ag Production of high molecular weight silicone resins
US10647821B2 (en) 2016-01-12 2020-05-12 Toray Fine Chemicals Co., Ltd. Production process for silicone polymer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269140A (en) * 1986-05-16 1987-11-21 Matsushita Electric Ind Co Ltd Pattern forming method
JP2005015779A (en) * 2003-06-03 2005-01-20 Shin Etsu Chem Co Ltd Material for antireflection film, antireflection film using the material, and pattern forming method
JP2007164148A (en) * 2005-11-21 2007-06-28 Shin Etsu Chem Co Ltd Silicon-containing film forming composition for etching mask, silicon-containing film for etching mask, and substrate processing intermediate and processed substrate processing method using the same
JP2007279135A (en) * 2006-04-03 2007-10-25 Tokyo Ohka Kogyo Co Ltd Composition for resist base layer film and resist base layer film using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269140A (en) * 1986-05-16 1987-11-21 Matsushita Electric Ind Co Ltd Pattern forming method
JP2005015779A (en) * 2003-06-03 2005-01-20 Shin Etsu Chem Co Ltd Material for antireflection film, antireflection film using the material, and pattern forming method
JP2007164148A (en) * 2005-11-21 2007-06-28 Shin Etsu Chem Co Ltd Silicon-containing film forming composition for etching mask, silicon-containing film for etching mask, and substrate processing intermediate and processed substrate processing method using the same
JP2007279135A (en) * 2006-04-03 2007-10-25 Tokyo Ohka Kogyo Co Ltd Composition for resist base layer film and resist base layer film using the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532981A (en) * 2009-07-31 2012-12-20 エーピーエム インコーポレイテッド Film-forming composition and film to which the composition is applied
KR101833208B1 (en) 2010-10-22 2018-04-13 닛산 가가쿠 고교 가부시키 가이샤 Composition for forming silicon-containing resist underlayer film, which contains fluorine-containing additive
WO2014097993A1 (en) * 2012-12-18 2014-06-26 日産化学工業株式会社 Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
JPWO2014097993A1 (en) * 2012-12-18 2017-01-12 日産化学工業株式会社 Composition for forming underlayer of self-assembled film containing polycyclic aromatic vinyl compound
US10508181B2 (en) 2012-12-18 2019-12-17 Nissan Chemical Industries, Ltd. Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
JP2015216368A (en) * 2014-04-21 2015-12-03 Jsr株式会社 Composition for bases, and self-structuring lithography process

Also Published As

Publication number Publication date
TW200903173A (en) 2009-01-16
JP2010112966A (en) 2010-05-20

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