WO2008083671A1

WO2008083671A1 - Optoelectronic device, and method for the production thereof

Info

Publication number: WO2008083671A1
Application number: PCT/DE2008/000028
Authority: WO
Inventors: Ralph Pätzold; Joachim Wecker
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2007-01-11
Filing date: 2008-01-09
Publication date: 2008-07-17
Also published as: DE102007001742A1; TW200833162A

Abstract

Disclosed is an optoelectronic device comprising a layer stack (10) which contains an organic material and has an active zone (12) designed to emit electromagnetic radiation, and an electronic unit (20). The layer stack (10) and the electronic unit (20) are arranged on a common substrate (30).

Description

description

Optoelectronic device and method for producing an optoelectronic device

The present invention relates to an optoelectronic device comprising an organic material-containing layer stack with an active region for emitting electromagnetic radiation and a method for producing an optoelectronic device.

This patent application claims the priority of German Patent Application No. 10 2007 001 742.3, the disclosure of which is hereby incorporated by reference.

Optoelectronic devices of the aforementioned type are referred to as organic light-emitting diodes ("OLEDs"), Such optoelectronic devices are primarily used as screens (televisions, PC screens, displays for automobiles, displays for mobile phones, touchscreen displays Another field of application is general lighting, in particular large-scale room lighting.

The object of the invention is to provide an optoelectronic device and a method for producing an optoelectronic device with which or in a simple manner a compact construction of the optoelectronic device is made possible. The object is solved by the features of the independent claims. Advantageous embodiments of the invention are characterized in the subclaims.

According to a first aspect, the invention is characterized by an optoelectronic device comprising an organic material-containing layer stack with an active region for emission of electromagnetic radiation, and an electronic unit, wherein the layer stack and the electronic unit are arranged on a common substrate ,

Thus, it is advantageously possible to jointly use the substrate as the carrier material both for the layer containing the organic material and the active region designed for emitting electromagnetic radiation and for the electronic unit. Such a structure is characterized by a particularly high integration density and consequently by a special user-friendliness.

According to a preferred embodiment, the electronic unit has a control unit for controlling and / or regulating the layer stack. Furthermore, the electronic unit may consist of a control unit for controlling and / or regulating the layer stack.

According to a further preferred embodiment, the electronic unit has a protective unit for protecting the layer stack. Preferably, the electronic unit consists of the protection unit. For example, the protection unit may be a reversely poled diode, in particular a Zener diode, which is the stack of layers is connected in parallel to counteract voltage overshoots.

Furthermore, the electronic unit may have a detection unit or monitoring unit for detecting or monitoring the electromagnetic radiation. For example, the detection or monitoring unit may be a sensor that detects, for example, the ambient radiation or the temperature. Depending on the detected values, a readjustment can take place by means of the control unit and the intensity of the emitted radiation can be adjusted as desired.

In an advantageous embodiment, the layer stack comprises first electrodes and the electronic unit has second electrodes, and at least one of the first electrodes and at least one of the second electrodes are electrically conductively coupled to one another, i. in particular, they are electrically connected to one another. This has the advantage that an electrical coupling of the layer stack with the electronic unit within the composite of the optoelectronic device produced by the common substrate from the layer stack and the electronic unit is thus possible.

In a further advantageous embodiment, the optoelectronic device has a protective layer, which is arranged and configured so that the electronic unit is at least partially disposed between the substrate and the protective layer. This has the advantage that no separate encapsulation of the electronic unit is required by means of its own protective layer. Rather, the layer stack and the electronic unit can be at least partially encapsulated by means of a single protective layer become. This allows in particular a long-term stable composite of the layer stack and the electronic unit, wherein the common protective layer can be designed particularly cost.

In a further advantageous embodiment, the substrate and / or the protective layer has a dimensionally stable material. Thus, the layer stack and the electronic unit can be coupled mechanically stable.

It is also advantageous if the substrate and / or the protective layer comprises glass or a plastic or metal foil. It is also conceivable to use a layer stack with layers of different materials, for example of different plastics and / or metals, in particular metal oxides, metal nitrides or metal oxynitrides. In this way, the substrate and / or the protective layer can be formed inexpensively. Glass is characterized in particular by its suitability for optoelectronic devices.

Furthermore, it is advantageous if the substrate and / or the protective layer comprises a material that is transparent to the electromagnetic radiation that can be emitted by the active region. In this way, the electromagnetic radiation emitted by the active region can reach a region outside the optoelectronic device in which it can be used.

A further advantageous embodiment consists in that one of the first electrodes and / or one of the second electrodes has at least one layer which comprises an electrically conductive oxide and / or a metal. It is also advantageous if at least one of the first electrodes and / or one of the second electrodes has a layer sequence with at least one first layer with an electrically conductive oxide and a second layer with a metal. This has the advantage that the first electrodes and / or the second electrodes can be used both for the layer stack with the active region designed for emitting electromagnetic radiation and for the electronic unit.

It is further advantageous if the metal is selected from a group of copper, aluminum, silver and chromium. These metals have the advantage of low electrical resistance. Furthermore, such a material may allow a particularly good adhesion of the second layer to an electrically conductive oxide of a first layer. Thus, a stable electrically conductive and mechanical coupling between the first layer and the second layer can be achieved.

It is also advantageous if at least one of the first electrodes is electrically conductively coupled to a plurality of second electrodes. This makes it possible to realize the construction of complex electronic switching structures by means of the first and the second electrodes.

In a further advantageous embodiment, adjacent ones of the plurality of second electrodes at least partially each have a spacing of about 100 microns to 300 microns from each other. This allows a miniaturized training of the electronic unit in the Optoelectronic device and thus a space-saving design of the electronic unit.

In a further advantageous embodiment, the optoelectronic device has a plurality of layer stacks. This allows the formation of a large-area optoelectronic device.

In a further advantageous embodiment, the electronic unit comprises a plurality of electronic subunits, which are arranged spatially separated from one another. In particular, the electronic control unit comprises a plurality of electronic sub-control units. This makes it possible to distribute the electronic sub-control units on the substrate on which the layer stacks and the electronic control unit are arranged. In particular, this makes it possible to achieve a homogeneous emission of electromagnetic radiation over the entire optoelectronic device.

In a further advantageous embodiment, a group of layer stacks can each be controlled by one of the electronic sub-control units. In this way, individual sub-control units which are designed to control and / or regulate the layer stacks can each control or regulate a subset of layer stacks. It is thus possible to achieve a good distribution of the electrical load on the various electronic sub-control units.

In a further advantageous embodiment, the optoelectronic device has a single external electrical lead, which is electrically conductive with the electronic unit is coupled. This makes it possible to connect the optoelectronic device by means of a single external supply line via the electronic unit, in particular via the electronic control unit, to an external power and / or voltage supply, whereby the assembly of the optoelectronic device can be facilitated. In particular, it can thus be avoided that a large number of external electrical supply lines must be brought to the optoelectronic device.

In a further advantageous embodiment, the optoelectronic device has a radiation sensor, which is electrically coupled to the electronic control unit in such a way that a signal of the radiation sensor can be emitted to the electronic control unit, and wherein the radiation sensor is arranged and configured such that the emission electromagnetic Radiation formed active region of the layer stack in response to the signal of the radiation sensor can be controlled. In this way, a stable level of the electromagnetic radiation emitted by the layer stack can be achieved. Furthermore, this allows an integrated design of the radiation sensor within the optoelectronic device, which can be a particularly space-saving and cost-effective solution.

According to a second aspect, the invention comprises a method for producing an optoelectronic device comprising the steps of: providing a substrate, applying a first layer to the substrate, wherein the first layer comprises an electrically conductive oxide, applying a second layer comprising a metal, on the first layer, removing portions of the first layer and / or portions of the second layer to form at least a first electrode and a second electrode, and depositing an active region of a layer stack on the second layer of the first electrode and electronic components on the second Layer of the second electrode, such that the electronic components are electrically conductively coupled to the second electrode. It is thus possible to combine different steps in the production of the organic material-containing layer stack and the electronic unit with each other, rather than performing them in separate steps. This allows a particularly cost-effective production of an optoelectronic device.

In an advantageous embodiment of the method for producing an optoelectronic device, in the step of applying the active region of the layer stack to the second layer of the first electrode and electronic components to the second layer of the second electrode, the electronic components are first applied to the second layer of the second electrode and then the active region of the layer stack is applied to the second layer of the first electrode. This makes it possible to apply the active region of the layer stack only when protection of the active region from external influences can be made possible.

In a further advantageous embodiment of the method for producing an optoelectronic device, the electronic components are applied to the second layer of the second electrode by means of thick-film technology. Method of thick film technology represent particularly cost-effective and proven methods for applying electronic components to substrates or layers.

Furthermore, it is advantageous if, with a further step between the steps of applying the first layer to the substrate and applying the second layer to the first layer, removal of portions of the first layer takes place. Thus, the first layer, which preferably comprises electrically conductive oxide, can advantageously be processed before the further steps.

In a further advantageous embodiment of the method, in further steps after the step of applying an active region of a layer stack to the second layer of the first electrode and electronic components to the second layer of the second electrode, provision of an external electrical supply line and establishment of an electrically conductive coupling take place the external electrical supply line to the electronic unit, in particular to the electronic control unit. This makes it possible to form optoelectronic devices in a particularly simple manner with a single external lead.

In a further advantageous embodiment of the method, in a further step after the step of applying an active region of a layer stack to the second layer of the first electrode and electronic components to the second layer of the second electrode, at least partial reshaping of the electronic unit with a protective layer for forming takes place an encapsulation. In order to the electronic unit can be protected from external influences.

Advantageous embodiments of the invention are explained in more detail below with reference to the schematic drawings.

Show it:

FIG. 1 shows a sectional view of an optoelectronic device,

Figure 2 is a schematic, partially broken plan view of an optoelectronic device, and

FIG. 3 shows a flow chart for a method for producing an optoelectronic device.

Elements of the same construction or function are identified across the figures with the same reference numerals. The illustrated elements and their proportions with each other are basically not to be regarded as true to scale, but individual elements, such as layers, components, components and areas for better representability and / or better understanding may be shown exaggerated thick or large.

FIG. 1 shows an exemplary embodiment of an optoelectronic device.

The optoelectronic device has a layer stack 10 with an active region designed for emitting electromagnetic radiation 12, wherein the active region 12 contains an organic material. The active region 12 may comprise organic polymers, organic oligomers, organic monomers, small organic molecules, small molecule, or combinations thereof Suitable materials, as well as arrangements and structuring of the active region materials 12, are known to those skilled in the art Thus, electron and hole recombination can produce electromagnetic radiation having a single wavelength or a range of wavelengths in the active region 12. In the case of an observer, a monochrome, a multicolored and / or a mixed-color luminous impression may occur to be awakened.

Adjacent to the active region 12, first electrodes 14, 16 are arranged. In particular, the first electrodes 14, 16 may have a surface or structured in partial areas. The first electrode 14 is arranged below the active region 12 with respect to FIG. 1 and is preferably designed as an anode, with which it can serve as a hole-inducing element. The first electrode 14 has a first layer 141 and a second layer 142, wherein the second layer 142 of the first electrode 14 of the first layer 141 of the first electrode 14 is associated.

The first layer 141 of the first electrode 14 is in particular formed as an electrically conductive oxide. Particularly preferred is the formation of the first layer 141 of the first electrode 14 as a transparent electrically conductive oxide (transparent conductive oxide, TCO).

Transparent electrically conductive oxides are transparent conductive materials, usually metal oxides, such as For example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or particularly preferably indium tin oxide (ITO). In addition to binary metal-oxygen compounds such as ZnO, SnO ₂ or In ₂ O _{3 also} include ternary metal-oxygen compounds such as Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ Oi ₂ or mixtures of different transparent electroconductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily have to correspond to a stoichiometric composition and may also be p- or n-doped.

The second layer 142 of the first electrode 14 preferably comprises chromium or copper.

The further first electrode 16 arranged above the active region 12 with respect to FIG. 1 is preferably designed as a cathode and thus serves as an electron-inducing element. Aluminum, barium, indium, silver, gold, magnesium, calcium or lithium, as well as compounds, combinations and alloys thereof, may in particular be advantageous as material for this electrode.

The optoelectronic device further has an electronic unit, which in this embodiment consists of an electronic control unit 20 which is designed to control and / or regulate the layer stack 10. The electronic control unit 20 has second electrodes 24, 26, the electronic components 22 to contact. The second electrode 24 disposed below the electronic components 22 with respect to FIG. 1 has a first layer 241 and a second layer 242. The first layer 241 is formed in the same manner as the first layer 141 of the first electrode 14 and the second layer The second electrode 24 is formed like the second layer 142 of the first electrode 14. The further second electrode 26 arranged above the electronic components 22 with respect to FIG. 1 is designed like the further first electrode 16 above the active region 12 of the layer stack 10.

The electronic control unit 20 may also be part of an electronic circuit. In particular, the electronic control unit 20 may be, for example, an integrated circuit (IC) or an active or passive electronic assembly or an active or passive electronic component for electrical circuits.

The layer stack 10 and the electronic control unit 20 are arranged on a common substrate 30. It is particularly preferred if the substrate 30 comprises glass. Alternatively or additionally, the substrate 30 may also include quartz, plastic films, metal, metal foils, silicon wafers, or any other suitable substrate material. Alternatively or additionally, the substrate 30 may also comprise a laminate or a layer sequence of a plurality of layers. In this case, at least one layer may comprise glass or be made of glass. In particular, in the case of a substrate 30 formed from a layer sequence, at least the layer may comprise glass on which the layer stack 10 and the electronic control unit 20 are arranged. In addition, the substrate 30 may also comprise plastic.

If the optoelectronic device is designed as an OLED and in particular as a so-called "bottom emitter", that is to say that it emits in the active region 12 Electromagnetic radiation is radiated through the substrate 30, the substrate 30 may advantageously have a transparency for at least a portion of the electromagnetic radiation generated in the active region 12. In the bottom emitter configuration, the first electrode 14 and the second electrode 24 can advantageously also have transparency for at least some of the electromagnetic radiation generated in the active region 12.

The further second electrode 26, which is arranged above the electronic components 22 with respect to FIG. 1, can be embodied as a cathode and thus serve as an electron-inducing element.

The optoelectronic device further comprises a protective layer 40, which is coupled to the substrate 30 such that the layer stack 10 and the electronic control unit 20 with the associated electrodes 14, 16, 24, 26 and the active region 12 and the electronic components 22 before Moisture and / or oxidizing substances such as oxygen can be protected. The encapsulation may preferably comprise one or more layers, wherein the encapsulation protective layer 40 preferably comprises planarization layers, barrier layers, water and / or oxygen absorbing layers, tie layers or combinations thereof.

Furthermore, the optoelectronic device can have optoelectronic elements, which are arranged downstream of the active region 12 in the emission direction of the electromagnetic radiation. In particular, about on the outside of the substrate 30 (the bottom emitter) or over the Protective layer 40 (for a top emitter)

Circular polarizer can be arranged with which can be advantageously avoided that light that is radiated into the optoelectronic device from the outside and can be reflected, for example, to the electrodes 14, 16, 24, 26, again emerge from the optoelectronic device.

The optoelectronic device further has an external electrical lead 50, which is electrically coupled to the electronic control unit 20. The external electrical lead 50 is formed in the embodiment shown here as a single external electrical lead, which serves to electrically couple the optoelectronic device with other electronic control units and / or a power and / or a voltage supply. Alternatively, the optoelectronic device may also have a plurality of external electrical leads.

FIG. 2 shows a schematic representation of the optoelectronic device in a partially broken plan view.

The optoelectronic device has a plurality of first electrodes 14, 16 and a plurality of second electrodes 24, 26. For reasons of clarity, here the first electrodes 14, 16 and the second electrodes 24 are shown only partially or broken, and the further second electrodes 26 Not shown. The first electrodes 14 and the second electrodes 24 are preferably arranged substantially in a common plane. The further first electrodes 16 are preferably in Substantially arranged in a plane which is different from the common plane in which the first electrodes 14 and the second electrodes 24 are arranged.

In this embodiment, the electronic unit has a radiation sensor 52 and an electronic control unit 20. The electronic control unit 20 comprises a plurality of electronic sub-control units 20a, 20b, 20c, 20d, which are arranged distributed on the substrate 30. The electronic sub-control units 20a,

20b, 20c, 20d are arranged in corner regions of the substrate 30 in the preferred embodiment shown here, but may alternatively be located in other regions of the substrate

30, wherein in particular an arrangement in edge regions of the substrate 30 is preferred, whereby a uniform luminance of the optoelectronic device can be achieved.

The first electrodes 14 and the second electrodes 24 are electrically conductively coupled together. Preferably, the first electrodes 14 are formed below the active region 12 of the layer stack 10 in the form of parallel adjacent conductor tracks and the other first electrodes 16 above the active region 12 of the layer stack 10 as perpendicular to the first electrode 14 extending parallel juxtaposed interconnects. The active regions 12 of the layer stack 10 are arranged between the first electrodes 14 and the further first electrodes 16.

The electronic sub-control units 20a, 20b, 20c, 20d are configured and arranged such that each of the electronic sub-control units 20a, 20b, 20c, 20d has a Group 11 of layer stacks 10 with the active areas 12 can control. This is illustrated by way of example on the top right in FIG. 2 with respect to the electronic sub-control unit 20b.

Neighboring the second electrodes 24 each have a distance D to each other. The distance D is preferably about 100 microns to 300 microns, wherein the distance D is to be understood as a center-to-center distance, so that the distance D denotes a grid of adjacent second electrode 24. Due to the distance D of about 100 microns to 300 microns on the one hand miniaturization of the electronic control unit 20 allows, on the other hand, thereby the electrical contacting of adjacent second electrodes 24 can be easily performed. In a corresponding manner adjacent to the other second electrodes 26, not shown, each have a distance D to each other.

The radiation sensor 52 is electrically coupled to the electronic control unit 20 via a sensor connection line 54. A signal 56 of the radiation sensor 52 can pass via the sensor connection line 54 to the electronic control unit 20, in particular the electronic sub-control unit 20b.

By means of the electronic control unit 20, the signal 56 of the radiation sensor 52 can be evaluated. If the electronic control unit 20 designed to control and / or regulate the layer stack 10 detects, by means of the radiation sensor 52, that the emission of electromagnetic radiation from the active region 12 of the layer stack 10 is no longer sufficient, it is possible to use a current or voltage-controlled control to control the active region 12 of the layer stack 10 so that from this again a sufficiently high level of electromagnetic radiation is emitted.

Optoelectronic devices as shown in FIGS. 1 and 2 can, owing to the advantages already described, enable a high level of economic efficiency and low costs through an efficient use of material. In particular, such optoelectronic devices may be suitable for use in display and / or

Lighting equipment characterized by a compact, space-saving and flat design.

By forming the layer stack 10 and the electronic unit on the common substrate 30, a particularly space-saving design of the optoelectronic device is possible in particular. Due to the common protective layer 40 for the electronic unit 20 and the layer stack 10, the electronic unit does not require a separate housing. The handling of the optoelectronic device can be formed very simply by the common substrate 30, the formation of a common protective layer 40 and a single common external electrical lead 50 for the electronic unit 20 and the layer stack 10.

Reference is now made to FIG. 3, which shows a flow chart for the method for producing an optoelectronic device.

In a step S8, the method is started. In a step S10, the substrate 30 is provided. The provision may include method steps known to the person skilled in the art for producing a suitable optoelectronic device.

In a step S12, the first layer 141, 241 is applied to the substrate 30, wherein the first layer 141, 241 comprises an electrically conductive oxide. The application of the first layer 141, 241 is preferably carried out by means of lithography. In an alternative embodiment of the method, the first layer 141, 241 may already be applied to the provided substrate 30.

In a further step S14, which is optional, portions of the first layer 141, 241 are removed.

In a further step S16, the second layer 142, 242, which comprises a metal, is applied to the first layer 141, 241. Preferably, the second layer 142, 242 is applied to the first layer 141, 241 by lithography. The second layer 142, 242 is in particular mechanically coupled to the first layer 141, 241 by an adhesion promoter, which may preferably be chromium or molybdenum.

In a step S18, by removing portions of the first layer 141, 241 and / or portions of the second layer 142, 242, the first electrode 14 and the second electrode 24 are formed. It is thus preferably the shape of the layer stack 10 of the optoelectronic device and the layout of the electronic unit, in particular the circuits of the electronic control unit 20 is formed. In a further step S20, the active region 12 of the layer stack 10 are applied to the second layer 142 of the first electrode 14 and the electronic components 22 to the second layer 242 of the second electrode. The application of the electronic components 22 takes place such that the electronic components 22 are electrically conductively coupled to the second electrode 24.

The application of the electronic components 22 is preferably carried out in thick-film technology, which can be realized in a particularly simple and cost-effective manner.

It is particularly preferred if the electronic components 22 are first applied to the second layer 242 of the second electrode 24 and then the active region 12 of the layer stack 10 is applied to the second layer 142 of the first electrode 14. Thus, the active region 12 of the layer stack 10 may be applied to the second layer 142 of the first electrode 14 at a time of the process just before the application of the protective layer 40 (see step S24), thereby allowing the active region 12 can be protected from moisture or other external influences.

In a further step S22, the external electrical supply line 50 is provided and the external electrical supply line 50 with the electronic unit, in particular the electronic control unit 20, electrically conductively coupled. This makes it possible to equip the optoelectronic device in a particularly simple manner with a single external lead. The electrical connections between the electronic unit and the Layer stacks 10 can already be realized via the suitable coupling of the first electrodes 14, 16 and the second electrodes 24, 26.

In a further step S24, the electronic unit is at least partially reformed by means of the protective layer 40, which preferably comprises a plastics material, particularly preferably an epoxy resin. As a result, both a protection of the electronic unit from external influences and a stable attachment can be achieved. Alternatively or additionally, the layer stack 10 or parts of the layer stack 10 are transformed by means of the protective layer 40.

In a further step S26, the method for producing an optoelectronic device ends.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

Claims

claims

An optoelectronic device (60) comprising

an organic material-containing layer stack (10) having an electromagnetic radiation emitting active region (12), and

- An electronic unit, wherein the layer stack (10) and the electronic unit on a common substrate (30) are arranged.

2. Optoelectronic device (60) according to claim 1, wherein the electronic unit has a control unit (20) for controlling and / or regulating the layer stack (10).

3. The optoelectronic device (60) according to claim 1 or 2, wherein the electronic unit has a protection unit for protecting the layer stack (10).

4. Optoelectronic device (60) according to one of claims 1 to 3, wherein the electronic unit has a detection unit or monitoring unit for detecting or monitoring the electromagnetic radiation.

5. The optoelectronic device according to claim 1, wherein the layer stack has first electrodes and the electronic unit has second electrodes, and at least one of the first electrodes. and at least one of the second electrodes (24, 26) are electrically conductively coupled together.

6. An optoelectronic device (60) according to any one of the preceding claims, comprising a protective layer (40) which is arranged and formed so that the electronic unit is at least partially disposed between the substrate (30) and the protective layer (40).

7. The optoelectronic device (60) according to claim 6, wherein the substrate (30) and / or the protective layer (40) comprises a dimensionally stable material.

8. The optoelectronic device (60) according to any one of claims 6 or 7, wherein the substrate (30) and / or the protective layer (40) comprises glass.

9. The optoelectronic device (60) according to any one of claims 6 to 8, wherein the substrate (30) and / or the protective layer (40) comprises a material which is transparent to the electromagnetic radiation emitted by the active region (12).

10. Optoelectronic device (60) according to one of claims 5 to 9, wherein one of the first electrodes (14, 16) and / or one of the second electrodes (24, 26) at least one layer (141, 142, 241, 242) comprising an electrically conductive oxide and / or a metal.

11. Optoelectronic device (60) according to claim 10, wherein at least one of the first electrodes (14, 16) and / or one of the second electrodes (24, 26) has a layer sequence with at least one first layer (141, 241) with an electrically conductive Oxide and a second layer (142, 242) having a metal.

12. An optoelectronic device (60) according to any one of claims 10 or 11, wherein the metal is selected from a group of copper, aluminum, silver and chromium.

13. Optoelectronic device (60) according to one of claims 5 to 12, wherein at least one of the first electrodes (14, 16) with a plurality of second electrodes (24, 26) is electrically conductively coupled.

14. The optoelectronic device of claim 13, wherein adjacent ones of the plurality of second electrodes (24, 26) at least partially each have a distance (D) of about 100 μm to 300 μm from each other.

15. An optoelectronic device (60) according to one of the preceding claims, which comprises a plurality of layer stacks

(10).

16. An optoelectronic device (60) according to any one of claims 2 to 15, wherein the electronic control unit

(20) comprises a plurality of electronic sub-control units (20a, 20b, 20c, 2Od), which are arranged spatially separated from each other.

17. An optoelectronic device (60) according to claim 16, wherein a group (11) of layer stacks (10) in each case by one of the electronic sub-control units (20a, 20b, 20c, 2Od) is controllable.

18. Optoelectronic device (60) according to one of the preceding claims, wherein the optoelectronic device

(60) a single external electrical lead (50) has, which is electrically conductively coupled to the electronic unit.

19. Optoelectronic device (60) according to claim 2 and 4 or one of the dependent claims 2 and 4 claims, wherein the optoelectronic device (60) comprises a radiation sensor (52) which is so electrically coupled to the electronic control unit (20) in that a signal (56) of the radiation sensor (52) is deliverable to the electronic control unit (20), and wherein the

Radiation sensor (52) is arranged and configured such that the active region (12) of the layer stack (10) designed for emission of electromagnetic radiation can be activated as a function of the signal (56) of the radiation sensor (52).

20. Method for producing an optoelectronic device (60) with the steps:

Providing a substrate (30),

Depositing a first layer (141, 241) on the substrate, the first layer (141, 241) comprising an electrically conductive oxide,

Applying a second layer (142, 242) comprising a metal to the first layer (141, 241),

- removing portions of the first layer (141, 241), and / or portions of the second layer (142, 242), forming at least a first electrode (14) and a second electrode (24), and

- applying an active region (12) a stack of layers (10) on the second layer (142) of the first electrode (14) and electronic components (22) ^'on the second layer (242) of the second electrode (24), such that the electronic components (22) are electrically conductively coupled to the second electrode (24).

21. The method according to the preceding claim, wherein, in the step, depositing the active region (12) of the layer stack (10) on the second layer (142) of the first electrode (14) and electronic components (22) on the second layer (242) the second electrode (24) first the electronic components (22) on the second layer (242) of the second electrode (24) are applied and then the active region (12) of the layer stack (10) on the second layer (142) of the first Electrode (14) is applied.

22. The method according to any one of claims 20 or 21, wherein the electronic components (22) by means of thick-film technology on the second layer (242) of the second electrode (24) are applied.

23. The method of claim 20, further comprising the step of applying the first layer to the substrate and applying the second layer to the first layer.

- Removal of portions of the first layer (141, 241).

24. The method according to any one of claims 20 to 23, with further steps after the step of applying the active region (12) of the layer stack (10) on the second layer (142) of the first electrode (14) and electronic components (22) on the second layer (242) of the second electrode (24):

- Providing an external electrical supply line (50) and - Establishing an electrically conductive coupling of the supply line (50) with the electronic unit.

25. The method of claim 20, further comprising the step of applying the active region of the layer stack to the second layer of the first electrode and electronic components the second layer (242) of the second electrode (24):

- At least partially forming the electronic unit (20) with a protective layer (40) for forming a

Encapsulation.