WO2008075495A1 - Photosensitive resin composition for forming insulating film, hardened film thereof and electronic part having the same - Google Patents

Photosensitive resin composition for forming insulating film, hardened film thereof and electronic part having the same Download PDF

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Publication number
WO2008075495A1
WO2008075495A1 PCT/JP2007/069615 JP2007069615W WO2008075495A1 WO 2008075495 A1 WO2008075495 A1 WO 2008075495A1 JP 2007069615 W JP2007069615 W JP 2007069615W WO 2008075495 A1 WO2008075495 A1 WO 2008075495A1
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Prior art keywords
insulating film
resin composition
film
photosensitive resin
group
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PCT/JP2007/069615
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French (fr)
Japanese (ja)
Inventor
Hirofumi Goto
Atsushi Ito
Hirofumi Sasaki
Ryuichi Okuda
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Jsr Corporation
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Priority to JP2008550058A priority Critical patent/JP5093116B2/en
Publication of WO2008075495A1 publication Critical patent/WO2008075495A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Definitions

  • Photosensitive resin composition for forming insulating film, cured film thereof, and electron roller provided with the same
  • the present invention relates to a photosensitive resin composition for forming an insulating film used for a surface protective film (passivation film, overcoat film), an interlayer insulating film, a flattening film, etc., such as a semiconductor element, and a cured product thereof.
  • the present invention relates to an insulating cured film and an electronic component including the same. More specifically, a cured film having excellent properties such as electrical insulation and thermal shock as a permanent film, and a photosensitive resin composition for forming an insulating film in which such a cured film can be obtained with high resolution and a high residual film ratio.
  • the present invention also relates to an electronic component provided with a cured product.
  • Patent Document 1 and Patent Document 2 each include a composition containing a photosensitive polyimide resin in which a photocrosslinking group is introduced into a polyimide precursor by ionic bonding, and photocrosslinking by an ester bond to a polyimide precursor.
  • a composition containing a photosensitive polyimide resin having a group introduced therein is described.
  • compositions require a high-temperature ring-closing step for imidization, and have a disadvantage that resolution is not sufficient due to solvent development.
  • Patent Document 3 describes a negative-type photosensitive composition in which a polyfunctional acrylic compound is added to an aromatic polyimide precursor!
  • a polyfunctional acrylic compound is added to an aromatic polyimide precursor!
  • Patent Document 4 discloses a photosensitive insulating resin composition that does not require a high-temperature curing step, has excellent resolution, electrical insulation, and thermal shock resistance, and has good heat resistance and chemical resistance.
  • the acid generators that are exemplified are the type that mainly absorbs i-line, and absorbs little to g-line or h-line! /, So when using g-line stepper or h-line stepper The degree was insufficient.
  • Patent Document 1 Japanese Patent Laid-Open No. 54-145794
  • Patent Document 2 Japanese Patent Laid-Open No. 03-186847
  • Patent Document 3 Japanese Patent Laid-Open No. 08-50354
  • Patent Document 4 Japanese Patent Laid-Open No. 2003-215802
  • An object of the present invention is to solve the problems associated with the prior art as described above, have good sensitivity to g-line and h-line, and have various resolution, electrical insulation, thermal shock properties, and the like.
  • An object of the present invention is to provide a photosensitive resin composition for forming an insulating film capable of forming a surface protective film, an interlayer insulating film, and a planarizing film having excellent characteristics. Furthermore, the present invention makes it easy to provide a cured film (insulating film) obtained by curing such a photosensitive resin composition for forming an insulating film, and an electronic component including the cured film.
  • Means for achieving the above object are as follows.
  • a photosensitive resin composition for forming an insulating film comprising: a solvent;
  • each R independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, ⁇ ⁇ ⁇ , —R 2 OR 3 or —R 4 OR 5 OR 6 , and n is 1 or 2
  • Each X independently represents a halogen atom.
  • R 1 is a methylene group or an alkylene group having 2 to 6 carbon atoms
  • R 2 is a methylene group or an alkylene group having 2 to 4 carbon atoms
  • R 3 is an alkyl group having 1 to 6 carbon atoms
  • R 4 is a methylene group or An alkylene group having 2 to 4 carbon atoms
  • R 5 represents a methylene group or an alkylene group having 2 to 6 carbon atoms
  • R 6 represents an alkyl group having 1 to 6 carbon atoms.
  • the photosensitive resin composition for forming an insulating film of the present invention uses a specific compound represented by the above formula (1) as a radiation-sensitive acid generator, so that g spring (436 nm), h It has a wide absorption in the spring (405 nm) and i-line (365 nm) regions, and can increase the acid generation efficiency as compared with general radiation-sensitive acid generators having other triazine skeletons. Therefore, a cured film having a high residual film ratio and excellent properties such as resolution, electrical insulation, thermal shock resistance, and chemical resistance can be obtained. Therefore, it can be suitably used as a surface protective film (passivation film, overcoat film), interlayer insulating film, planarizing film, etc. for electronic components such as semiconductor elements.
  • FIG. 1 is a schematic diagram for explaining a cross section of a semiconductor element.
  • FIG. 2 is a schematic diagram illustrating a cross section of a semiconductor element.
  • FIG. 3 is a schematic diagram for explaining a cross section of a base material for thermal shock evaluation.
  • FIG. 4 is a schematic diagram illustrating a base material for thermal shock evaluation.
  • FIG. 5 is a schematic diagram for explaining a base material for electrical insulation evaluation.
  • (meth) acryl means one or both of “acryl” and “methacryl”.
  • (meta) atelate indicates either or both of “atalylate” and “metatalate”.
  • the photosensitive resin composition for forming an insulating film of the present invention comprises (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) a specific compound represented by the formula (1), and (C) a crosslinking agent. And.
  • phenol resin (A) examples include, for example, nopolac resin, polyhydroxystyrene, polyhydroxystyrene copolymer, hydroxy Copolymers of styrene and styrene, copolymers of hydroxy styrene, styrene and (meth) acrylic acid derivatives, phenol-xylylene glycol condensation resins, crezo-loxylylene glycol condensation resins, phenol-dicyclopentagen condensation resins, etc. are used. .
  • nopolac resin poly (ethylene) copolymer, copolymer of hydroxystyrene, styrene and (meth) acrylic acid derivative, and phenol-xylylene glycol condensation resin are preferable.
  • These phenol resins (A) may be used alone or in combination of two or more.
  • the nopolac resin can be obtained by, for example, the force S obtained by condensing phenols and aldehydes in the presence of a catalyst.
  • phenols examples include phenol, o-cresol, m-cresol, p Creso Monore, ⁇ echino lehuenore, m— echeno lehuenore, p echino lehuenore, o buchinolehuenore, m buchinolehuenore, p buchinolehuenore, 2, 3 Xylenol, 2, 4 xylenol, 2, 5 xylenol, 2, 6 xylenol, 3, 4 xylenore, 3, 5 xylenore, 2, 3, 5 ⁇ limethino leenoure, 3, 4, 5 , Power teconore, resorcinol, pyrogalonore, ⁇ -naphthol, ⁇ -naphthol and the like.
  • aldehydes examples include formaldehyde, paraformaldehyde, acetate aldehyde, and benzaldehyde.
  • Specific nopolac resins include, for example, phenol / formaldehyde condensed novolac resins, talesol / formaldehyde condensed nopolac resins, phenol-naphthol.
  • the polystyrene-reduced weight average molecular weight of the phenolic resin ( ⁇ ) is 2000 or more from the viewpoint of the resolution, thermal shock resistance, heat resistance, residual film ratio, etc. of the obtained insulating film.
  • Preferred ⁇ is about 2000-20000.
  • the content ratio of the phenol resin ( ⁇ ) in the photosensitive resin composition for forming an insulating film of the present invention is 30 to 90% by weight when the entire composition excluding the solvent is 100% by weight. More preferably, it is 40 to 80% by weight.
  • the content of this phenolic resin ( ⁇ ) is 30 to 90% by weight, the film formed using the photosensitive resin composition for forming an insulating film has sufficient developability with an alkaline aqueous solution! / Looks good for
  • the “compound” represented by the following general formula (1) (hereinafter also referred to as “acid generator ( ⁇ )”) is a compound that generates an acid upon irradiation with radiation or the like. Due to the catalytic action, it can react with a functional group in the crosslinking agent (C) described later to form a negative pattern.
  • the acid generator ( ⁇ ) has an s-triazine skeleton as represented by the following general formula (1).
  • This acid generator ( ⁇ ) with s-triazine skeleton has broad absorption and absorption in the g-line, h-line, and i-line regions, and is a general radiation-sensitive acid generator with other triazine skeletons. Compared to the above, it is possible to obtain an insulating cured film having high acid generation efficiency and a high residual film ratio.
  • each R independently represents a hydrogen atom, an alkyl group having 16 carbon atoms, ⁇ ⁇ ⁇ — R 2 OR 3 or — R 4 OR 5 OR 6 , n is 1 or 2, Independently, X represents a halogen atom.
  • R 1 is a methylene group or an alkylene group having 26 carbon atoms
  • R 2 is a methylene group or an alkylene group having 24 carbon atoms
  • R 3 is an alkyl group having 16 carbon atoms
  • R 4 is a methylene group or 2 carbon atoms 4 alkylene group
  • R 5 represents a methylene group or an alkylene group having 26 carbon atoms
  • R 6 represents an alkyl group having 16 carbon atoms.
  • the R force When the alkyl group has 16 carbon atoms, specifically, a methyl group [CH], an ethyl group [CH CH] n propyl group [CH CH CH]
  • R 1 is a methylene group or an alkylene group having 26 carbon atoms.
  • R ⁇ OH is CH OH CH CH OH CH CH
  • R 2 is a methylene group or an alkylene group having 24 carbon atoms
  • R 3 is an alkyl group having 16 carbon atoms.
  • Specific — R 2 OR 3 includes —CH 2 OCH 2 —CH 2 CH 2 O 2 CH 3 CH 2 CH 2 O 3 CH 2 O 2 CH 2
  • R 4 OR 5 OR 6 When R is R 4 OR 5 OR 6 , R 4 is a methylene group or an alkylene group having 24 carbon atoms, R 5 is a methylene group or an alkylene group having 26 carbon atoms, R 6 is an alkyl group having 16 carbon atoms. Specific — R 4 OR 5 OR 6 includes CH OCH OCH
  • a methyl group, Echiru group, n- propyl radical, n-butyl group, a -R 1 OH is, CH CH OH CH CH CH OH CH CH CH CH OH virtuous
  • n 1 or 2.
  • X representing a halogen atom is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, more preferably a chlorine atom.
  • acid generator (B) having an s-triazine skeleton represented by the general formula (1) include 2- (p methoxystyryl) -1,4 bis (trichloromethyl) 1, 3, 5 Triazine [R; CH n; l X; Cl] 2— (m methoxystyryl) in formula (1)
  • the acid generator (B) may be used alone or in combination of two or more.
  • the blending amount of the acid generator (B) is selected from the viewpoint of ensuring the remaining film ratio, sensitivity, resolution, pattern shape, etc. of the photosensitive resin composition for forming an insulating film of the present invention. 100 parts by weight 0.;! 10 parts by weight is preferred, more preferably 0.3 5 parts by weight More preferably, it is 0.5 ⁇ 3 to 3 parts by weight.
  • the blending amount of this acid generator ( ⁇ ) is 0.;! To 10 parts by weight, it has high transparency to radiation and generates an amount of acid sufficient for the progress of the curing reaction upon exposure. Therefore, it is preferable because a good pattern shape can be obtained with a high residual film ratio.
  • the photosensitive resin composition for forming an insulating film in the present invention includes other acid generators (hereinafter referred to as “other acid generator (b)”. .) May be included
  • Examples of the other acid generator (b) include onium salt compounds, halogen-containing compounds, diazoketone compounds, sulfone compounds, sulfonic acid compounds, sulfonimide compounds, and diazomethane compounds.
  • Examples of the above-mentioned onium salt compounds include odonium salts, sulfonium salts, phosphonium salts, diazonium salts, pyridinium salts, and the like. Specifically, for example, diphenenoleo trimethyloroleomethane methane norephonate, diphenenoleo de noorne mutono renenos nore honate, diphenenoleo de noordone hexaph noreo mouth.
  • halogen-containing compound examples include haloalkyl group-containing hydrocarbon compounds, and haloalkyl group-containing heterocyclic compounds. Specifically, for example,
  • diazoketone compound examples include 1,3 diketo 2-diazo compound, diazobenzoquinone compound, diazonaphthoquinone compound and the like. Specific examples include 1,2-naphthoquinonediazido 4-sulfonic acid ester compounds of phenols.
  • sulfone compounds include ⁇ -ketosulfone compounds, ⁇ sulfonylsulfone compounds, ⁇ diazo compounds of these compounds, and the like. Specific examples include 4-trisphenacylsulfone, mesitylphenacylsulfone, bis (phenacylsulfonyl) methane, and the like.
  • sulfonic acid compound examples include alkyl sulfonic acid esters, halo aralkyl sulfonic acid esters, aryl sulfonic acid esters, imino sulfonates, and the like.
  • alkyl sulfonic acid esters examples include alkyl sulfonic acid esters, halo aralkyl sulfonic acid esters, aryl sulfonic acid esters, imino sulfonates, and the like.
  • benzoin tosylate, pyrogalronoletri twelve trobenzyl ⁇ -toluenesulfonate and the like can be mentioned.
  • Examples of the sulfonimide compound include ⁇ (trifluoromethylsulfonyloxy) succinimide, ⁇ - (trifluoromethylsulfonyloxy) phthalimide, ⁇ - (trifluoromethylsulfonyloxy) diphf.
  • diazomethane compound examples include bis (trifnoleolomethylsulfonyl) diazomethane, bis (cyclohexenolesnorephoninore) diazomethane, bis (phenenoresnorephoninore) diazomethane, and the like. it can.
  • the amount of the other acid generator (b) is 5 parts by weight or less, preferably 3 parts by weight or less, more preferably 1 part by weight or less with respect to 100 parts by weight of the phenol resin (A). .
  • crosslinking agent (c) is the phenol resin
  • crosslinking component that reacts with A
  • the crosslinking agent (C) include compounds having at least two alkyl etherated amino groups in the molecule, oxsilane ring-containing compounds, thiirane ring-containing compounds, oxetanyl group-containing compounds, and isocyanate groups. It is possible to list compounds (including blocked ones).
  • Examples of the compound having at least two or more alkyl etherified amino groups in the molecule include (poly) methylolated melamine, (poly) methylolated glycolurinole, (poly) methylol. All or part (at least two) of the active methylol groups (CH OH groups) in nitrogen compounds such as benzoguanamine chloride and (poly) methylol urea are alkyl ether
  • examples of the alkyl group constituting the alkyl ether include a methyl group, an ethyl group, and a butyl group, and they may be the same as or different from each other.
  • a methylol group that is not alkyl etherified may be condensed between two molecules, which may be self-condensed within one molecule, and as a result, an oligomer component may be formed.
  • hexamethoxymethyl melamine, hexabutoxymethyl melamine, tetramethoxymethyldalicoluril, tetrabutoxymethylglycoluril and the like can be used.
  • the oxysilane ring-containing compound is not particularly limited as long as it contains an oxysilane ring in the molecule.
  • phenol nopolac epoxy resin cresol nopolac epoxy resin, bisphenol epoxy resin , Trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylylene type epoxy resin, naphthol xylylene type epoxy resin, phenol-naphthol type epoxy resin, phenol-dicyclopentagen type epoxy resin, alicyclic type An epoxy resin, an aliphatic epoxy resin, etc. are mentioned.
  • crosslinking agents (C) may be used alone or in a combination of two or more.
  • crosslinking agents (C) compounds having at least two alkyl etherated amino groups in the molecule and oxsilane ring-containing compounds are preferred. Furthermore More preferably, a compound having at least two alkyl etherified amino groups in the molecule and an oxysilane ring-containing compound are used in combination.
  • the blending amount of the crosslinking agent (C) in the present invention is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight with respect to 100 parts by weight of the phenol resin (A). Part.
  • the amount of the crosslinking agent (C) is 1 to 100 parts by weight, the curing reaction proceeds sufficiently, and the resulting cured film has a high resolution, good pattern shape, heat resistance, It is preferable because of its excellent insulation.
  • the content ratio of the oxsilane ring-containing compound is the same as that of the compound having the alkyl etherified amino group and the oxsilane ring-containing compound.
  • the total is 100% by weight, it is preferably 50% by weight or less, more preferably 5 to 40% by weight. In this case, the obtained cured film is preferable because it is excellent in chemical resistance without impairing high resolution.
  • crosslinked polymer particle (D) in order to improve the durability or thermal shock resistance of the cured film obtained, it is also referred to as “crosslinked polymer particle (D)”). )) Can be further contained.
  • the crosslinked polymer particle (D) is not particularly limited as long as the glass transition temperature (Tg) of the polymer constituting the crosslinked polymer particle is 0 ° C. or lower! /, But has an unsaturated polymerizable group.
  • Two or more crosslinkable monomers hereinafter simply referred to as “crosslinkable monomers” and one or more “others” selected so that the Tg of the crosslinked polymer particles (D) is 0 ° C. or less.
  • a monomer obtained by copolymerization with a monomer a monomer obtained by copolymerization with a monomer.
  • two or more of the above-mentioned other monomers are used in combination, and at least one of the other monomers has a functional group other than a polymerizable group such as a canolepoxinole group, an epoxy group, an amino group, an isocyanate group, or a hydroxyl group. It is preferable to have it.
  • a functional group other than a polymerizable group such as a canolepoxinole group, an epoxy group, an amino group, an isocyanate group, or a hydroxyl group. It is preferable to have it.
  • the conventional radiation-sensitive insulating resin composition may contain a liquid rubber for the purpose of improving adhesion (see Japanese Patent Application Laid-Open No. 2004-191816). There was a tendency for the resolution to decrease. Such liquid rubber flows at room temperature.
  • acrylic rubber (ACM), attalononitrile tributadiene butadiene rubber (NBR), alitrononitrile triacrylate butadiene rubber (NBA) and the like are often known.
  • the photosensitive resin composition for forming an insulating film of the present invention is characterized in that it basically does not contain the liquid rubber.
  • the crosslinked polymer particle (D) contained in the photosensitive resin composition for forming an insulating film of the present invention is a particulate crosslinked copolymer, it is in a dispersed state in the composition.
  • the liquid rubber is different from the crosslinked polymer particle (D) in that it is in a state compatible with a solvent or a resin in a solution. Therefore, by containing the crosslinked polymer particles (D), the photosensitive resin composition for forming an insulating film is superior in resolution as compared with the case of containing liquid rubber and the glass transition temperature of the cured film is extremely low. Can be obtained. Further, the cured film obtained by using the bridge polymer particles (D) is excellent in thermal shock resistance.
  • the liquid rubber is in a state compatible with other components in the composition. Therefore, in order to ensure compatibility with other components, there are limitations on the molecular weight and the content in the composition.
  • the crosslinked polymer particles (D) are in a dispersed state in the composition, the content of the cured film obtained is sufficient to obtain effects such as crack resistance, elongation and insulation. This force S is possible. From the above points, the photosensitive resin composition for forming an insulating film of the present invention is excellent in resolution, crack resistance, elongation, and insulation.
  • crosslinkable monomer examples include dibutylbenzene, diallyl phthalate, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate. And compounds having a plurality of polymerizable unsaturated groups, such as pentaerythritol tri (meth) acrylate, polyethylene glycol di (meth) acrylate and polypropylene glycol di (meth) acrylate. Of these, dibulenebenzene is preferred!
  • the crosslinkable monomer used in producing the crosslinked polymer particles (D) is preferably 1 to 20% by weight with respect to 100% by weight of the total monomers used for copolymerization. More preferably 2 to 10% by weight.
  • Examples of the other monomers include butadiene, isoprene, dimethylbutadiene, black-opened polyne, 1,3-pentagen and other gen compounds, (meth) acrylonitrile, a Black port acrylonitrile, alpha-chloromethyl acrylonitrile, alpha-methoxy Atari b Nitrile Le, alpha - ethoxy acrylonitrile, crotonic acid nitrile, Kei cinnamic acid nitrile, Itakon acid Gini tolyl, dinitrile maleate, unsaturated and fumaric acid dinitrile Nitryl compounds, (meth) acrylamide, N, N, monomethylene bis (meth) acrylamide, N, N, monoethylene bis (meth) acrylamide, N, N, monohexamethylene bis (meth) acrylamide, N hydroxymethy Unsaturated amides such as ru (meth) acrylamide, N- (2-hydroxyeth) acryl
  • Amide group-containing unsaturated compounds such as dimethyl (meth) acrylamide, and hydroxyethyl-containing unsaturated compounds such as hydroxyethyl (methato).
  • butadiene, isoprene, (meth) acrylonitrile, (meth) acrylic acid alkyl esters, styrene, ⁇ hydroxystyrene, ⁇ isopropyl phenol, glycidyl (meth) acrylate, (meth) acrylic Acids, hydroxyalkyl (meth) acrylates, etc. are preferred! [0043]
  • at least one type of gen compound, specifically butadiene is used as another monomer.
  • Such a gen compound is preferably 20 to 80% by weight, more preferably 30 to 70% by weight, based on 100% by weight of all monomers used for copolymerization.
  • other gen compounds such as butadiene are copolymerized at 20 to 80% by weight with respect to 100% by weight of the total monomers as other monomers, the crosslinked polymer particles (D) become rubbery soft fine particles. It is possible to prevent cracks from occurring in the cured film and to obtain a cured film having excellent durability.
  • the crosslinked polymer particles (D) may be used singly or in combination of two or more.
  • the average particle size of the crosslinked polymer particles (D) is usually 30 to 500 nm, preferably 40 to 200, and more preferably 50 to 120.
  • the method for controlling the particle size of the crosslinked polymer particles (D) is not particularly limited.
  • the number of micelles during the emulsion polymerization is controlled by the amount of the emulsifier used.
  • the particle size can be controlled.
  • the average particle diameter of the crosslinked polymer particles (D) in the present invention is determined by diluting a dispersion of crosslinked polymer particles according to a conventional method using a light scattering flow distribution measuring device “LPA-3000” manufactured by Otsuka Electronics. Measured value.
  • the amount of the crosslinked polymer particles (D) blended is preferably 0.5 to 50 parts by weight, more preferably 1 to 30 parts by weight with respect to 100 parts by weight of the phenol resin (A). Part.
  • the blended amount of the crosslinked polymer particles (D) is 0.5 to 50 parts by weight, it has excellent compatibility or dispersibility with other components, and improves the thermal shock resistance and heat resistance of the resulting cured film. It can be made.
  • the photosensitive resin composition for forming an insulating film of the present invention can contain an adhesion assistant in order to improve the adhesion to the substrate.
  • adhesion assistant examples include a functional silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group. It is.
  • trimethoxysilylbenzoic acid examples include trimethoxysilylbenzoic acid, ⁇ -methacryloxypropyltrimethoxysilane, butyltriacetoxysilane , butyltrimethoxysilane , ⁇ -isocyanatopropyltriethoxysilane, ⁇ -glycidoxypropyl trimethoxysilane , ⁇ - (3,4-epoxysilane) isocyanurate, and the like.
  • adhesion aids may be used alone or in combination.
  • Two or more kinds may be mixed and used.
  • the amount of the adhesion assistant is 0.2 to 100 parts by weight of the phenol resin ( ⁇ ).
  • the adhesion aid is 0.2 to 10 parts by weight, it is preferable because it has excellent storage stability and good adhesion.
  • the photosensitive resin composition for forming an insulating film of the present invention can contain a solvent in order to improve the handleability of the resin composition and to adjust the viscosity and storage stability.
  • the solvent is not particularly limited.
  • ethylene glycol monomethyl etherate acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monomethyl methacrylate ether, propylene Propylene glyconolemonorenoateolate, such as glycolenolemonochinoleatenore, propyleneglycolenomonopropinoreatenore, propyleneglycolenomonobutinoreethenore; Propylene glycol dialkyl ethers such as Nollechinolene Tenole, Propylene Glyconoresin Propinoreateoretol, Propylene Glycolinole Butinoleite; Propylene glycol monoalkyl ether acetates, such as pyrene glycol monomethylenoate acetate, propylene glycolenomonoethylenoate acetate, propylene glycolenomon
  • the photosensitive resin composition for forming an insulating film of the present invention can contain other additives as necessary so as not to impair the characteristics of the present invention.
  • other additives include inorganic fillers, sensitizers, quenchers, leveling agents'surfactants, and phenolic low molecular compounds.
  • the leveling agent 'surfactant is usually added to improve the coating property of the resin composition.
  • a leveling agent / surfactant is not particularly limited, and examples thereof include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetinoleethenole, poly-poxyethylene-pure rain ethereole and the like.
  • Polyoxyethylene alkyl ethers such as polyalkylene alkyl ethers, polyoxyethylene octyl phenol ether, polyoxyethylene nourol phenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan mono Sorbitan fatty acid esters such as palmitate and sorbitan monostearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxy Sorbitan monostearate, Poriokishe Chile Nso sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc.
  • the product name is F-top EF301, EF303, EF352 (above, Manufactured by Tochem Products Co., Ltd.), Megafuck Fl 71, F172, F173 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Fluorad FC430, FC431 (above, manufactured by Sumitomo 3M Limited), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfinore E1004, KH-10, KH-20, KH-30, KH-40 (above, manufactured by Asahi Glass Co., Ltd.
  • Fluorent Leveling Agents such as 250, 251, 222F, FTX-218 (above, manufactured by Neos Co., Ltd.), surfactants, organosiloxane polymers KP341, X—70-092, X — 70— 093 (above, manufactured by Shin-Etsu Chemical Co., Ltd.), SH8400 (manufactured by Dowco Jung Toray Co., Ltd.), acrylic acid or (methacrylolic acid-based polyflow No. 75, same No. 77, same No. 90, same No. 95 (above, manufactured by Kyoeisha Yushi Chemical Co., Ltd.) It is.
  • leveling agents' surfactants may be used singly or in combination of two or more.
  • the blending amount of the leveling agent 'surfactant is usually 50 to 2000 ppm in the resin solution, preferably S, more preferably 100 to! OOOppm.
  • the blending amount of this leveling agent 'surfactant is 50 to 2000 ppm, it is preferable because uniform application onto a stepped substrate is good and adhesion after development and after curing is excellent. .
  • Examples of the phenolic low molecular weight compound include 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, tris (4-hydroxyphenylenomethane), 1,1- Bis (4-hydroxyphenyl) -1-1-phenylethane, tris (4-hydroxyphenyl) ethane, 1,3-bis [1- (4-hydroxyphenyl) -1-methylethynole] benzene, 1,4 Bis [1 (4-hydroxyphenyl) 1-1-methylethynole] benzene, 4, 6 Bis [1 (4-hydroxyphenyl) 1-methylethyl] 1,1,3-dihydroxybenzene, 1,1-bis (4- 1- [4- [1- (4-hydroxyphenyl) 1-methylethynole] fenenole] ethane, 1,1,2,2,2-tetra (4-hydroxyphenyl) ethane, etc. It is done.
  • the content ratio of the phenolic low molecular compound is preferably 40% by weight or less when the total of the phenolic resin (A) and the phenolic low molecular compound is 100% by weight. And more preferably ;! to 30% by weight.
  • the method for preparing the photosensitive resin composition for forming an insulating film of the present invention is not particularly limited, and can be prepared by a known method. Alternatively, a sample bottle with each component in it and completely stoppered can be prepared by stirring on a wave rotor.
  • the cured film in the present invention is characterized in that the photosensitive resin composition for forming an insulating film is cured.
  • the above-mentioned photosensitive resin composition for forming an insulating film according to the present invention has a high residual film ratio and excellent resolution, and its cured film is excellent in electrical insulation and thermal shock resistance.
  • the cured film can be suitably used as a surface protective film, planarizing film, interlayer insulating film material, etc. for electronic components such as semiconductor elements and semiconductor packages.
  • the above-mentioned photosensitive resin composition for forming an insulating film according to the present invention was used as a support (with a resin-coated copper foil, a copper-clad laminate, or a metal sputtered film). It is applied to silicon wafers, alumina substrates, etc.) and dried to evaporate the solvent and form a coating film.
  • the acid generated from the acid generator (B) by exposure through a desired mask pattern diffuses by performing a subsequent heat treatment (hereinafter referred to as “PEB”).
  • This acid catalysis promotes the reaction between the phenol resin (A) and the crosslinking agent (C).
  • development is performed with an alkaline developer, and a desired pattern can be obtained by dissolving and removing unexposed portions.
  • a cured film can be obtained by performing a heat treatment to develop the insulating film characteristics.
  • a coating method such as a dating method, a spray method, a bar coat method, a roll coat method, or a spin coat method can be used.
  • the thickness of the coating film can be appropriately controlled by adjusting the solid content concentration and viscosity of the coating means and the composition solution. For example, in the case of coating using a spin coating method, 20 to 10,000 mPa's is preferable from the viewpoint of handleability and in-plane uniformity of film thickness.
  • UV lamps such as id lamp, g spring stenonoichi, h spring stenonoichi, i spring stenonoichi, gh spring stenono 1 and ghi spring stepper.
  • the amount of exposure is appropriately selected depending on the light source used, the resin film thickness, etc.
  • the resin film thickness is about 100 to 20000 j / m 2 at a resin film thickness of 50 to 50 Hm. It is.
  • the PEB treatment is performed in order to accelerate the curing reaction of the phenol resin (A) and the crosslinking agent (C) by the generated acid.
  • the PEB condition varies depending on the blending amount of the resin composition, the used film thickness, and the like. Usually, 70 to 150 ° C, preferably 80 to 120 ° C; Thereafter, development is performed with an alkaline developer, and a desired pattern is formed by dissolving and removing unexposed portions. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method.
  • the development conditions are usually 20 to 40 ° C; about! To 10 minutes.
  • Examples of the alkaline developer include alkaline compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, and choline so that the concentration is about 1 to 10% by weight.
  • alkaline aqueous solution dissolved in water can be mentioned.
  • an appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution. After developing with an alkaline developer, it is washed with water and dried.
  • the film in order to sufficiently develop the characteristics as an insulating film after development, can be sufficiently cured by heat treatment.
  • Such curing conditions are not particularly limited, but the composition can be cured by heating at a temperature of 50 to 250 ° C. for about 30 minutes to 10 hours depending on the use of the cured film. It can also be heated in two stages in order to allow the curing to proceed sufficiently and to prevent deformation of the resulting pattern.
  • the temperature is 50 to 120 ° C.
  • It can also be cured by heating for about 2 minutes to about 2 hours and further for about 10 minutes to 10 hours at a temperature of 80 to 250 ° C.
  • a general oven, an infrared furnace, or the like can be used as a heating facility.
  • an electronic component such as a semiconductor element (substrate with circuit) as shown in FIGS. 1 and 2 can be formed. That is, after the metal pad 2 is formed in a pattern on the substrate 1, the cured insulating film 3 is formed using the resin composition. If the wiring is formed in a pattern and then the metal wiring 4 is formed in a pattern, a circuit board as shown in FIG. 1 can be obtained. Further, when a cured insulating film 5 is formed thereon using the resin composition, a circuit board as shown in FIG. 2 can be obtained.
  • A— 4 p Xylylene glycol condensed phenol resin [Mitsui Chemicals, trade name “XLC-3LJ]
  • E-1 ⁇ -Glycidoxypropyltrimethoxysilane (product name “S510”, manufactured by Chisso Corporation)
  • E—2 1, 3, 5—N-tris (trimethoxysilylpropyl) isocyanurate [GE Toshiba Siri (Made by Corn Co., Ltd., trade name “Y-11597”)
  • G-1 Leveling agent ⁇ Surfactant (Neos Co., Ltd., trade name "FTX-218")
  • G-2 Leveling agent ⁇ Surfactant (Toray 'Dow Coung Co., Ltd., trade name) "SH8400"
  • a 6-inch silicon wafer was spin-coated with a photosensitive resin composition for forming an insulating film and heated at 110 ° C. for 3 minutes using a hot plate to produce a uniform resin film having a thickness of 20 ⁇ m. Then, using an aligner (manufactured by Karl Suss, “MA-100”), UV light from a high-pressure mercury lamp was exposed through a pattern mask so that the exposure amount at a wavelength of 420 nm was 500 mj / cm 2 . Next, heat it at 110 ° C for 3 minutes (PEB) on a hot plate, and soak it for 2 seconds at 23 ° C using 2.38 wt% tetramethylammonium hydroxide aqueous solution. Developed. The remaining film ratio was calculated from the film thickness before and after development.
  • a 6-inch silicon wafer was spin-coated with a photosensitive resin composition for forming an insulating film and heated at 110 ° C. for 3 minutes using a hot plate to produce a uniform resin film having a thickness of 20 ⁇ m. Then, using an aligner (manufactured by Karl Suss, “MA-100”), UV light from a high-pressure mercury lamp was exposed through a pattern mask so that the exposure amount at a wavelength of 420 nm was 500 mj / cm 2 . Next, it was heated (PEB) at 110 ° C. for 3 minutes on a hot plate, and then developed by immersion for 2 seconds at 23 ° C. using a 2.38 wt% tetramethylammonium hydroxide aqueous solution. And the minimum dimension of the obtained pattern was made into the resolution.
  • MA-100 aligner
  • a 10 m thick uniform resin film was prepared by heating at 110 ° C for 3 minutes using a hot plate. Thereafter, the resin coating film was cured by heating at 190 ° C. for 1 hour using a convection oven to obtain a cured film. Next, this cured film was treated with a pressure tacker tester (“EHS-221MD”, manufactured by Tabyes Pec Co., Ltd.) for 168 hours under conditions of a temperature of 121 ° C, a humidity of 100%, and a pressure of 2.1 atm. did. Then, the cross-cut test (cross cut tape method) was evaluated in accordance with JIS K 5400 before and after the test.
  • EHS-221MD pressure tacker tester
  • 1 was heated at 10 ° C. for 3 minutes to produce a base material having a resin coating film having a thickness of 10 m on the copper foil 7.
  • the resin coating film was cured by heating at 190 ° C for 1 hour using a convection oven to obtain a cured film.
  • This substrate was subjected to a resistance test using a thermal shock tester (Tano Yspec Co., Ltd., “TS A-40L”) at a cycle of ⁇ 65 ° C./30 minutes to 150 ° C./30 minutes. Then, the number of cycles (every 100 cycles) until a defect such as a crack occurred in the cured film was measured.
  • Insulation evaluation base having a patterned copper foil 10 on a substrate 9 as shown in FIG.
  • a base material having a resin coating film having a thickness of 10 m on copper foil 10 by applying a photosensitive resin composition for forming an insulating film to material 11 and heating at 110 ° C. for 3 minutes using a hot plate Was made. Thereafter, the resin coating film was cured by heating at 190 ° C. for 1 hour using a convection oven to obtain a cured film.
  • This base material was put into a migration evaluation system (“AEI, EHS—221MD” manufactured by Tabai Espec Co., Ltd.) under the conditions of temperature 121 ° C, humidity 85%, pressure 1.2 atm, and applied voltage 5V. Processed for 200 hours. Thereafter, the resistance value ( ⁇ ) of the test substrate was measured to evaluate the insulation.
  • AEI EHS—221MD
  • the photosensitive resin composition for forming an insulating film includes (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) the compound represented by the general formula (1), and (C) a crosslinked bridge. And that contains the agent.

Abstract

It is intended to provide a photosensitive resin composition for forming an insulating film which makes it possible to form a surface protective film, an interlayer insulating film or a flatten film being highly sensitive to g-ray and h-ray and having various excellent properties such as resolution, electrical insulating properties and heat impact strength, a hardened film thereof and an electronic part having the hardened film. This photosensitive resin composition for forming an insulating film comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound represented by the following general formula (1), a crosslinking agent and an adhesion aid: (1) wherein R's independently represent each a hydrogen atom, a C1-6 alkyl group, -R1OH, -R2OR3 or -R4OR5OR6; n is 1 or 2; and X's independently represent each a halogen atom.

Description

明 細 書  Specification
絶縁膜形成用感光性樹脂組成物及びその硬化膜並びにそれを備える電 子 ロロ  Photosensitive resin composition for forming insulating film, cured film thereof, and electron roller provided with the same
技術分野  Technical field
[0001] 本発明は、半導体素子等の表面保護膜 (パッシベーシヨン膜、オーバーコート膜)、 層間絶縁膜、平坦化膜等に用いられる絶縁膜形成用感光性樹脂組成物及びそれ が硬化されてなる絶縁性の硬化膜並びにそれを備える電子部品に関する。更に詳し くは、永久膜として電気絶縁性及び熱衝撃性等の特性に優れた硬化膜、及びそのよ うな硬化膜が、高解像度、高残膜率で得られる絶縁膜形成用感光性樹脂組成物、並 びにその硬化膜を備える電子部品に関する。  [0001] The present invention relates to a photosensitive resin composition for forming an insulating film used for a surface protective film (passivation film, overcoat film), an interlayer insulating film, a flattening film, etc., such as a semiconductor element, and a cured product thereof. The present invention relates to an insulating cured film and an electronic component including the same. More specifically, a cured film having excellent properties such as electrical insulation and thermal shock as a permanent film, and a photosensitive resin composition for forming an insulating film in which such a cured film can be obtained with high resolution and a high residual film ratio. The present invention also relates to an electronic component provided with a cured product.
背景技術  Background art
[0002] 従来、電子機器の半導体素子に用いられる表面保護膜、層間絶縁膜等には耐熱 性や機械的特性等に優れた感光性ポリイミド系樹脂組成物が広く使用されている。 例えば、特許文献 1及び特許文献 2には、それぞれ、ポリイミド前駆体にイオン結合 により光架橋基を導入した感光性ポリイミド系樹脂を含有する組成物、及び、ポリイミ ド前駆体にエステル結合により光架橋基を導入した感光性ポリイミド系樹脂を含有す る組成物が記載されて!/、る。  Conventionally, photosensitive polyimide resin compositions having excellent heat resistance, mechanical properties, and the like have been widely used for surface protective films, interlayer insulating films, and the like used in semiconductor devices of electronic devices. For example, Patent Document 1 and Patent Document 2 each include a composition containing a photosensitive polyimide resin in which a photocrosslinking group is introduced into a polyimide precursor by ionic bonding, and photocrosslinking by an ester bond to a polyimide precursor. A composition containing a photosensitive polyimide resin having a group introduced therein is described.
しかしながら、これらの組成物においては、イミド化するために高温の閉環工程を必 要としており、溶剤現像であるために解像性が十分でないという欠点があった。  However, these compositions require a high-temperature ring-closing step for imidization, and have a disadvantage that resolution is not sufficient due to solvent development.
また、特許文献 3には、芳香族ポリイミド前駆体に多官能アクリル化合物を添加した ネガ型タイプの感光性組成物が記載されて!/、るが、前記と同様な問題点が指摘され ている。  Patent Document 3 describes a negative-type photosensitive composition in which a polyfunctional acrylic compound is added to an aromatic polyimide precursor! However, the same problems as described above are pointed out. .
一方、特許文献 4には、高温の硬化工程が不要で、解像性、電気絶縁性、熱衝撃 性に優れるとともに、良好な耐熱性、耐薬品性を有する感光性絶縁樹脂組成物が開 示されているが、例示されている酸発生剤は i線を主に吸収するタイプであり、 g線や h線に対する吸収が少な!/、ため g線ステッパー、 h線ステッパーを使用した場合の感 度については不十分であった。 [0003] 特許文献 1:特開昭 54— 145794号公報 On the other hand, Patent Document 4 discloses a photosensitive insulating resin composition that does not require a high-temperature curing step, has excellent resolution, electrical insulation, and thermal shock resistance, and has good heat resistance and chemical resistance. However, the acid generators that are exemplified are the type that mainly absorbs i-line, and absorbs little to g-line or h-line! /, So when using g-line stepper or h-line stepper The degree was insufficient. [0003] Patent Document 1: Japanese Patent Laid-Open No. 54-145794
特許文献 2:特開平 03— 186847号公報  Patent Document 2: Japanese Patent Laid-Open No. 03-186847
特許文献 3:特開平 08— 50354号公報  Patent Document 3: Japanese Patent Laid-Open No. 08-50354
特許文献 4 :特開 2003— 215802号公報  Patent Document 4: Japanese Patent Laid-Open No. 2003-215802
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0004] 本発明の課題は、上記のような従来技術に伴う問題点を解決し、 g線、 h線に対する 感度が良好であり、且つ解像性、電気絶縁性、熱衝撃性等の諸特性に優れた表面 保護膜、層間絶縁膜、平坦化膜を形成しうる絶縁膜形成用感光性樹脂組成物を提 供することを目的としている。更に、本発明はこのような絶縁膜形成用感光性樹脂組 成物を硬化させた硬化膜 (絶縁膜)及びその硬化膜を備える電子部品を提供するこ とを目白勺としている。 [0004] An object of the present invention is to solve the problems associated with the prior art as described above, have good sensitivity to g-line and h-line, and have various resolution, electrical insulation, thermal shock properties, and the like. An object of the present invention is to provide a photosensitive resin composition for forming an insulating film capable of forming a surface protective film, an interlayer insulating film, and a planarizing film having excellent characteristics. Furthermore, the present invention makes it easy to provide a cured film (insulating film) obtained by curing such a photosensitive resin composition for forming an insulating film, and an electronic component including the cured film.
課題を解決するための手段  Means for solving the problem
[0005] 本発明者らは、前記問題点を解決すべく鋭意研究した結果、優れた特性を有する 絶縁膜形成用感光性樹脂組成物を見出すに至った。 [0005] As a result of intensive studies to solve the above problems, the present inventors have found a photosensitive resin composition for forming an insulating film having excellent characteristics.
前記の目的を達成するための手段は以下のとおりである。  Means for achieving the above object are as follows.
[1] (A)フエノール性水酸基を有するアルカリ可溶性樹脂と、(B)下記一般式(1) で表される化合物と、(C)架橋剤と、(E)密着助剤と、(F)溶剤と、を含有することを 特徴とする絶縁膜形成用感光性樹脂組成物。  [1] (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) a compound represented by the following general formula (1), (C) a crosslinking agent, (E) an adhesion assistant, (F) And a solvent. A photosensitive resin composition for forming an insulating film, comprising: a solvent;
[化 1]  [Chemical 1]
(1)(1)
Figure imgf000004_0001
〔式(1)において、 Rは各々独立に水素原子、炭素数 1〜6のアルキル基、 Ι^ΟΗ 、— R2OR3又は— R4OR5OR6を示し、 nは 1又は 2であり、 Xは各々独立にハロゲン 原子を示す。尚、 R1はメチレン基又は炭素数 2〜6のアルキレン基、 R2はメチレン基 又は炭素数 2〜4のアルキレン基、 R3は炭素数 1〜6のアルキル基、 R4はメチレン基 又は炭素数 2〜4のアルキレン基、 R5はメチレン基又は炭素数 2〜6のアルキレン基、 R6は炭素数 1〜6のアルキル基を示す。〕
Figure imgf000004_0001
[In the formula (1), each R independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, Ι ^ ΟΗ, —R 2 OR 3 or —R 4 OR 5 OR 6 , and n is 1 or 2 Each X independently represents a halogen atom. R 1 is a methylene group or an alkylene group having 2 to 6 carbon atoms, R 2 is a methylene group or an alkylene group having 2 to 4 carbon atoms, R 3 is an alkyl group having 1 to 6 carbon atoms, R 4 is a methylene group or An alkylene group having 2 to 4 carbon atoms, R 5 represents a methylene group or an alkylene group having 2 to 6 carbon atoms, and R 6 represents an alkyl group having 1 to 6 carbon atoms. ]
[2]上記(C)架橋剤力 分子中に 2つ以上のアルキルエーテル化されたアミノ基を 有する化合物を含む上記 [1]に記載の絶縁膜形成用感光性樹脂組成物。  [2] The photosensitive resin composition for forming an insulating film according to the above [1], which contains a compound having two or more alkyl etherified amino groups in the molecule (C).
[3]上記 (C)架橋剤が、ォキシラン環含有化合物を含む上記 [1]又は [2]に記載 の絶縁膜形成用感光性樹脂組成物。  [3] The photosensitive resin composition for forming an insulating film according to the above [1] or [2], wherein the (C) crosslinking agent comprises an oxsilane ring-containing compound.
[4]更に、(D)架橋ポリマー粒子を含有する上記 [1]乃至 [3]の!/、ずれかに記載の 絶縁膜形成用感光性樹脂組成物。  [4] The photosensitive resin composition for forming an insulating film according to any one of [1] to [3] above, further comprising (D) crosslinked polymer particles.
[5]上記 [1]乃至 [4]の!/、ずれかに記載の絶縁膜形成用感光性樹脂組成物が硬 化されてなることを特徴とする硬化膜。  [5] A cured film obtained by curing the photosensitive resin composition for forming an insulating film according to any one of [1] to [4] above.
[6]上記 [5]に記載の硬化膜を備えることを特徴とする電子部品。  [6] An electronic component comprising the cured film as described in [5] above.
[7]上記硬化膜が、層間絶縁膜又は平坦化膜である上記 [6]に記載の電子部品。 発明の効果  [7] The electronic component according to [6], wherein the cured film is an interlayer insulating film or a planarizing film. The invention's effect
[0006] 本発明の絶縁膜形成用感光性樹脂組成物は、感放射線性酸発生剤として、前記 式(1)で表される特定の化合物を用いているため、 g泉(436nm)、 h泉(405nm)、 i 線(365nm)領域に広い吸収を持ち、他のトリァジン骨格を有する一般的な感放射 線性酸発生剤に比べて酸発生効率を高くすることができる。そのため、残膜率が高く 、解像性、電気絶縁性、熱衝撃性及び耐薬品性等の特性に優れた硬化膜を得ること ができる。従って、半導体素子等の電子部品の表面保護膜 (パッシベーシヨン膜、ォ 一バーコート膜)、層間絶縁膜、平坦化膜等に好適に用いることができる。  [0006] The photosensitive resin composition for forming an insulating film of the present invention uses a specific compound represented by the above formula (1) as a radiation-sensitive acid generator, so that g spring (436 nm), h It has a wide absorption in the spring (405 nm) and i-line (365 nm) regions, and can increase the acid generation efficiency as compared with general radiation-sensitive acid generators having other triazine skeletons. Therefore, a cured film having a high residual film ratio and excellent properties such as resolution, electrical insulation, thermal shock resistance, and chemical resistance can be obtained. Therefore, it can be suitably used as a surface protective film (passivation film, overcoat film), interlayer insulating film, planarizing film, etc. for electronic components such as semiconductor elements.
図面の簡単な説明  Brief Description of Drawings
[0007] [図 1]半導体素子の断面を説明する模式図である。  FIG. 1 is a schematic diagram for explaining a cross section of a semiconductor element.
[図 2]半導体素子の断面を説明する模式図である。  FIG. 2 is a schematic diagram illustrating a cross section of a semiconductor element.
[図 3]熱衝撃性評価用の基材の断面を説明する模式図である。 [図 4]熱衝撃性評価用の基材を説明する模式図である。 FIG. 3 is a schematic diagram for explaining a cross section of a base material for thermal shock evaluation. FIG. 4 is a schematic diagram illustrating a base material for thermal shock evaluation.
[図 5]電気絶縁性評価用の基材を説明する模式図である。  FIG. 5 is a schematic diagram for explaining a base material for electrical insulation evaluation.
符号の説明  Explanation of symbols
[0008] 1;基板、 2 ;金属パッド、 3 ;硬化絶縁膜、 4 ;金属配線、 5 ;硬化絶縁膜、 6 ;基板、 7 ; 銅箔、 8 ;熱衝撃性評価用の基材、 9 ;基板、 10 ;銅箔、 11 ;絶縁性評価用の基材。 発明を実施するための最良の形態  [0008] 1; substrate, 2; metal pad, 3; cured insulating film, 4; metal wiring, 5; cured insulating film, 6; substrate, 7; copper foil, 8: base material for thermal shock evaluation, 9 ; Board | substrate, 10; copper foil, 11; the base material for insulation evaluation. BEST MODE FOR CARRYING OUT THE INVENTION
[0009] 以下、本発明の実施の形態について詳細に説明する。尚、本明細書において、「( メタ)アクリル」とは、「アクリル」、「メタクリル」のどちらか一方或いは両方を示す。また、 「(メタ)アタリレート」とは、「アタリレート」、「メタタリレート」のどちらか一方或いは両方 を示す。 Hereinafter, embodiments of the present invention will be described in detail. In the present specification, “(meth) acryl” means one or both of “acryl” and “methacryl”. In addition, “(meta) atelate” indicates either or both of “atalylate” and “metatalate”.
[0010] [1]絶縁膜形成用感光性樹脂組成物  [1] A photosensitive resin composition for forming an insulating film
本発明の絶縁膜形成用感光性樹脂組成物は、 (A)フエノール性水酸基を有するァ ルカリ可溶性樹脂と、(B)前記式(1)で表される特定の化合物と、(C)架橋剤と、を含 有するものである。  The photosensitive resin composition for forming an insulating film of the present invention comprises (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) a specific compound represented by the formula (1), and (C) a crosslinking agent. And.
[0011] [1 - 1] (A)フエノール性水酸基を有するアルカリ可溶性樹脂  [1-1] (A) Alkali-soluble resin having phenolic hydroxyl group
本発明における「フエノール性水酸基を有するアルカリ可溶性樹脂」(以下、「フエノ ール樹脂 (A)」という。)としては、例えば、ノポラック樹脂、ポリヒドロキシスチレン、ポ リヒドロキシスチレンの共重合体、ヒドロキシスチレンとスチレンの共重合体、ヒドロキシ スチレン、スチレン及び (メタ)アクリル酸誘導体の共重合体、フエノールーキシリレン グリコール縮合樹脂、クレゾ一ルーキシリレングリコール縮合樹脂、フエノールージシ クロペンタジェン縮合樹脂等が用いられる。これらのなかでも、ノポラック樹脂、ポリヒ 共重合体、ヒドロキシスチレン、スチレン及び (メタ)アクリル酸誘導体の共重合体、フ ェノール—キシリレングリコール縮合樹脂が好ましい。尚、これらのフエノール樹脂 (A )は、 1種単独で用いてもよいし、 2種以上を混合して用いてもよい。  Examples of the “alkali-soluble resin having a phenolic hydroxyl group” in the present invention (hereinafter referred to as “phenol resin (A)”) include, for example, nopolac resin, polyhydroxystyrene, polyhydroxystyrene copolymer, hydroxy Copolymers of styrene and styrene, copolymers of hydroxy styrene, styrene and (meth) acrylic acid derivatives, phenol-xylylene glycol condensation resins, crezo-loxylylene glycol condensation resins, phenol-dicyclopentagen condensation resins, etc. are used. . Among these, nopolac resin, poly (ethylene) copolymer, copolymer of hydroxystyrene, styrene and (meth) acrylic acid derivative, and phenol-xylylene glycol condensation resin are preferable. These phenol resins (A) may be used alone or in combination of two or more.
[0012] 上記ノポラック樹脂は、例えば、フエノール類とアルデヒド類とを触媒の存在下で縮 合させることにより得ること力 Sでさる。 [0012] The nopolac resin can be obtained by, for example, the force S obtained by condensing phenols and aldehydes in the presence of a catalyst.
上記フエノール類としては、例えば、フエノール、 o—クレゾール、 m—クレゾール、 p クレゾ一ノレ、 ο ェチノレフエノーノレ、 m—ェチノレフエノーノレ、 p ェチノレフエノーノレ、 o ブチノレフエノーノレ、 m ブチノレフエノーノレ、 p ブチノレフエノーノレ、 2, 3 キシレノ ール、 2, 4 キシレノール、 2, 5 キシレノール、 2, 6 キシレノール、 3, 4 キシレ ノーノレ、 3, 5 キシレノーノレ、 2, 3, 5 卜リメチノレフエノーノレ、 3, 4, 5 卜リメチノレフェ ノーノレ、力テコーノレ、レゾルシノーノレ、ピロガローノレ、 α ナフトール、 β ナフトール 等が挙げられる。 Examples of the phenols include phenol, o-cresol, m-cresol, p Creso Monore, ο echino lehuenore, m— echeno lehuenore, p echino lehuenore, o buchinolehuenore, m buchinolehuenore, p buchinolehuenore, 2, 3 Xylenol, 2, 4 xylenol, 2, 5 xylenol, 2, 6 xylenol, 3, 4 xylenore, 3, 5 xylenore, 2, 3, 5 卜 limethino leenoure, 3, 4, 5 , Power teconore, resorcinol, pyrogalonore, α-naphthol, β-naphthol and the like.
また、上記アルデヒド類としてはホルムアルデヒド、パラホルムアルデヒド、ァセトアル デヒド、ベンズアルデヒド等が挙げられる。  Examples of the aldehydes include formaldehyde, paraformaldehyde, acetate aldehyde, and benzaldehyde.
具体的なノポラック樹脂としては、例えば、フエノール/ホルムアルデヒド縮合ノボラ ック樹脂、タレゾール /ホルムアルデヒド縮合ノポラック樹脂、フエノールーナフトール
Figure imgf000007_0001
Specific nopolac resins include, for example, phenol / formaldehyde condensed novolac resins, talesol / formaldehyde condensed nopolac resins, phenol-naphthol.
Figure imgf000007_0001
本発明におけるフエノール樹脂 (Α)のポリスチレン換算重量平均分子量は、得られ る絶縁膜の解像性、熱衝撃性、耐熱性、残膜率等の観点から、 2000以上であること 力 ましぐより好まし <は 2000〜20000程度である。  In the present invention, the polystyrene-reduced weight average molecular weight of the phenolic resin (Α) is 2000 or more from the viewpoint of the resolution, thermal shock resistance, heat resistance, residual film ratio, etc. of the obtained insulating film. Preferred <is about 2000-20000.
また、本発明の絶縁膜形成用感光性樹脂組成物中におけるフエノール樹脂 (Α)の 含有割合は、溶剤を除いた組成物の全体を 100重量%とした場合に、 30〜90重量 %であることが好ましぐより好ましくは 40〜80重量%である。このフエノール樹脂(Α )の含有割合が 30〜90重量%である場合には、絶縁膜形成用感光性樹脂組成物を 用いて形成された膜がアルカリ水溶液による十分な現像性を有して!/、るため好ましレヽ  In addition, the content ratio of the phenol resin (Α) in the photosensitive resin composition for forming an insulating film of the present invention is 30 to 90% by weight when the entire composition excluding the solvent is 100% by weight. More preferably, it is 40 to 80% by weight. When the content of this phenolic resin (Α) is 30 to 90% by weight, the film formed using the photosensitive resin composition for forming an insulating film has sufficient developability with an alkaline aqueous solution! / Looks good for
[1 - 2] (Β)—般式(1)で表される化合物 [1-2] (Β) —Compound represented by general formula (1)
本発明において、下記一般式(1)で表される「化合物」(以下、「酸発生剤 (Β)」とも いう。)は、放射線等の照射により酸を発生する化合物であり、この酸の触媒作用によ り、後述する架橋剤(C)中の官能基と反応し、ネガ型のパターンを形成することがで きる。  In the present invention, the “compound” represented by the following general formula (1) (hereinafter also referred to as “acid generator (Β)”) is a compound that generates an acid upon irradiation with radiation or the like. Due to the catalytic action, it can react with a functional group in the crosslinking agent (C) described later to form a negative pattern.
また、酸発生剤 (Β)は、下記一般式(1)で表されるように、 s—トリァジン骨格を有す るものである。この s—トリァジン骨格を有する酸発生剤(Β)は、 g線、 h線、 i線領域に 広レ、吸収を持っており、他のトリァジン骨格を有する一般的な感放射線性酸発生剤 に比べて酸発生効率が高ぐ残膜率の高い、絶縁性の硬化膜を得ることができる。 Further, the acid generator (Β) has an s-triazine skeleton as represented by the following general formula (1). This acid generator (Β) with s-triazine skeleton has broad absorption and absorption in the g-line, h-line, and i-line regions, and is a general radiation-sensitive acid generator with other triazine skeletons. Compared to the above, it is possible to obtain an insulating cured film having high acid generation efficiency and a high residual film ratio.
[0016] [化 2] [0016] [Chemical 2]
(1 )
Figure imgf000008_0001
(1)
Figure imgf000008_0001
〔式(1)において、各々独立に Rは水素原子、炭素数 1 6のアルキル基、 Ι^ΟΗ — R2OR3又は— R4OR5OR6を示し、 nは 1又は 2であり、各々独立に Xはハロゲン 原子を示す。尚、 R1はメチレン基又は炭素数 2 6のアルキレン基、 R2はメチレン基 又は炭素数 2 4のアルキレン基、 R3は炭素数 1 6のアルキル基、 R4はメチレン基 又は炭素数 2 4のアルキレン基、 R5はメチレン基又は炭素数 2 6のアルキレン基、 R6は炭素数 1 6のアルキル基を示す。〕 [In the formula (1), each R independently represents a hydrogen atom, an alkyl group having 16 carbon atoms, Ι ^ ΟΗ — R 2 OR 3 or — R 4 OR 5 OR 6 , n is 1 or 2, Independently, X represents a halogen atom. R 1 is a methylene group or an alkylene group having 26 carbon atoms, R 2 is a methylene group or an alkylene group having 24 carbon atoms, R 3 is an alkyl group having 16 carbon atoms, R 4 is a methylene group or 2 carbon atoms 4 alkylene group, R 5 represents a methylene group or an alkylene group having 26 carbon atoms, and R 6 represents an alkyl group having 16 carbon atoms. ]
[0017] 上記一般式(1)における R力 炭素数 1 6のアルキル基である場合、具体的には 、メチル基 [ CH ]、ェチル基 [ CH CH ] n プロピル基 [ CH CH CH ] In the above general formula (1), the R force When the alkyl group has 16 carbon atoms, specifically, a methyl group [CH], an ethyl group [CH CH] n propyl group [CH CH CH]
3 2 3 2 2 3 イソプロピル基 [ CH (CH ) ] n ブチル基 [ CH CH CH CH ] isoブチル  3 2 3 2 2 3 Isopropyl [CH (CH)] n Butyl [CH CH CH CH] isobutyl
3 2 2 2 2 3  3 2 2 2 2 3
基 [ CH CH (CH ) ] secブチル基 [ CH (CH ) CH CH ] tertブチル基 [  Group [CH CH (CH)] sec Butyl [CH (CH) CH CH] tert Butyl [
2 3 2 3 2 3  2 3 2 3 2 3
C (CH ) ]、ペンチル基、イソペンチル基、ネオペンチル基、へキシル基等を例示す C (CH 2)], pentyl group, isopentyl group, neopentyl group, hexyl group, etc.
3 3 3 3
ること力 Sでさる。  The power S
また、上記 Rが、 Ι^ΟΗである場合、 R1はメチレン基又は炭素数 2 6のアルキレ ン基である。具体的な一 R^OHとしては、 CH OH CH CH OH CH CH When R is Ι ^ ΟΗ, R 1 is a methylene group or an alkylene group having 26 carbon atoms. One specific R ^ OH is CH OH CH CH OH CH CH
2 2 2 2 2 2 2 2 2 2
CH OH -CH CH CH CH OH等を例示することができる。 CH OH -CH CH CH CH CH OH and the like can be exemplified.
2 2 2 2 2  2 2 2 2 2
更に、上記 Rが、 R2OR3である場合、 R2はメチレン基又は炭素数 2 4のアルキ レン基であり、 R3は炭素数 1 6のアルキル基である。具体的な— R2OR3としては、 -CH OCH -CH CH OCH CH CH CH OCH CH OCH CHFurther, when R is R 2 OR 3 , R 2 is a methylene group or an alkylene group having 24 carbon atoms, and R 3 is an alkyl group having 16 carbon atoms. Specific — R 2 OR 3 includes —CH 2 OCH 2 —CH 2 CH 2 O 2 CH 3 CH 2 CH 2 O 3 CH 2 O 2 CH 2
CH CH OCH CH -CH CH CH OCH CH CH CH CH CH OCH C CH CH OCH CH -CH CH CH OCH CH CH CH CH CH OCH C
2 2 2 2 2 H等を例示することができる。 2 2 2 2 2 H etc. can be illustrated.
3  Three
また、上記 Rが、 R4OR5OR6である場合、 R4はメチレン基又は炭素数 2 4のァ ルキレン基であり、 R5はメチレン基又は炭素数 2 6のアルキレン基であり、 R6は炭素 数 1 6のアルキル基である。具体的な— R4OR5OR6としては、 CH OCH OCH When R is R 4 OR 5 OR 6 , R 4 is a methylene group or an alkylene group having 24 carbon atoms, R 5 is a methylene group or an alkylene group having 26 carbon atoms, R 6 is an alkyl group having 16 carbon atoms. Specific — R 4 OR 5 OR 6 includes CH OCH OCH
2 2 3 -CH CH OCH OCH CH CH CH OCH OCH CH OCH OCH C  2 2 3 -CH CH OCH OCH CH CH CH OCH OCH CH OCH OCH C
2 2 2 3 2 2 2 2 3 2 2 2 2 2 2 3 2 2 2 2 3 2 2 2
H CH CH OCH OCH CH CH CH CH OCH OCH CH等を例示すExamples include H CH CH OCH OCH CH CH CH CH OCH OCH CH
3 2 2 2 2 3 2 2 2 2 2 3 ること力 Sでさる。 3 2 2 2 2 3 2 2 2 2 2 3
[0018] また、上記 Rのなかでも、メチル基、ェチル基、 n—プロピル基、 n ブチル基、—R1 OHとしては、 CH CH OH CH CH CH OH CH CH CH CH OHが好 [0018] Further, among the above R, a methyl group, Echiru group, n- propyl radical, n-butyl group, a -R 1 OH is, CH CH OH CH CH CH OH CH CH CH CH OH virtuous
2 2 2 2 2 2 2 2 2 ましぐメチル基、ェチル基、 -CH CH OHであることがより好ましい。  2 2 2 2 2 2 2 2 2 More preferably a methyl group, an ethyl group, or —CH 2 CH 2 OH.
2 2  twenty two
[0019] 上記一般式(1)における nは 1又は 2である。  In the above general formula (1), n is 1 or 2.
[0020] また、上記一般式(1)において、ハロゲン原子を示す Xは、フッ素原子、塩素原子、 臭素原子又はヨウ素原子であることが好ましぐより好ましくは塩素原子である。  [0020] In the general formula (1), X representing a halogen atom is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, more preferably a chlorine atom.
[0021] 具体的な上記一般式(1)で表される s トリァジン骨格を有する酸発生剤 (B)として は、例えば、 2— (p メトキシスチリル)一 4, 6 ビス(トリクロロメチル) 1, 3, 5 トリ ァジン [式(1)における R;CH n;l X;Cl] 2— (m メトキシスチリル)一 4, 6 ビ  Specific examples of the acid generator (B) having an s-triazine skeleton represented by the general formula (1) include 2- (p methoxystyryl) -1,4 bis (trichloromethyl) 1, 3, 5 Triazine [R; CH n; l X; Cl] 2— (m methoxystyryl) in formula (1)
3  Three
ス(トリクロロメチル) 1, 3, 5—トリァジン [式(1)における R;CH n;l X;Cl] 2  (Trichloromethyl) 1, 3, 5-triazine [R; CH n; l X; Cl] 2 in formula (1)
3  Three
-[4-[2-{4, 6 ビス(トリクロロメチル) 1, 3, 5 トリァジン一 2 ィル }ビュル〕 フエノキシ]エタノール [式(1)における R;CH CH OH n;l X;C1] 2—〔2— (3,  -[4- [2- {4, 6 Bis (trichloromethyl) 1, 3, 5 Triazine 1-2 yl} bur] Phenoxy] ethanol [R in formula (1); CH CH OH n; l X; C1] 2— [2— (3,
2 2  twenty two
4ージメトキシフエニル)ェテュル〕 4, 6—ビス(トリクロロメチル)ー1, 3, 5—トリアジ ン [式(1)における R;CH n;2 X;C1] 2—〔2—(2, 4 ジメトキシフエ二ノレ)ェテ  4-Dimethoxyphenyl) ethyl] 4,6-bis (trichloromethyl) -1,3,5-triazine [R; CH n; 2 X; C1] in formula (1) 2- [2- (2, 4 Dimethoxyphene) ete
3  Three
ニル〕ー4, 6—ビス(トリクロロメチル)ー1, 3, 5—トリァジン [式(1)における R;CH  Nyl] -4,6-bis (trichloromethyl) -1,3,5-triazine [R; CH in formula (1)
3 n;2 X;Cl]等が挙げられる。  3 n; 2 X; Cl] and the like.
尚、酸発生剤(B)は、 1種単独で用いてもよいし、 2種以上を混合して用いてもよい  The acid generator (B) may be used alone or in combination of two or more.
[0022] 上記酸発生剤 (B)の配合量は、本発明の絶縁膜形成用感光性樹脂組成物の残膜 率、感度、解像度、パターン形状等を確保する観点から、フエノール樹脂 (A) 100重 量部に対して、 0.;! 10重量部であることが好ましぐより好ましくは 0.3 5重量部 、更に好ましくは 0· 5〜3重量部である。この酸発生剤(Β)の配合量が 0. ;!〜 10重 量部である場合、放射線に対して高い透明性を有し、露光により硬化反応の進行に 十分な量の酸が発生することで、高残膜率で良好なパターン形状を得ることができる ため好ましい。 [0022] The blending amount of the acid generator (B) is selected from the viewpoint of ensuring the remaining film ratio, sensitivity, resolution, pattern shape, etc. of the photosensitive resin composition for forming an insulating film of the present invention. 100 parts by weight 0.;! 10 parts by weight is preferred, more preferably 0.3 5 parts by weight More preferably, it is 0.5 · 3 to 3 parts by weight. When the blending amount of this acid generator (配合) is 0.;! To 10 parts by weight, it has high transparency to radiation and generates an amount of acid sufficient for the progress of the curing reaction upon exposure. Therefore, it is preferable because a good pattern shape can be obtained with a high residual film ratio.
[0023] また、本発明における絶縁膜形成用感光性樹脂組成物には、上記酸発生剤 (Β) 以外にも、他の酸発生剤(以下、「他の酸発生剤 (b)」という。)が含まれていてもよい In addition to the acid generator (酸), the photosensitive resin composition for forming an insulating film in the present invention includes other acid generators (hereinafter referred to as “other acid generator (b)”. .) May be included
Yes
上記他の酸発生剤 (b)としては、例えば、ォニゥム塩化合物、ハロゲン含有化合物 、ジァゾケトン化合物、スルホン化合物、スルホン酸化合物、スルホンイミド化合物、ジ ァゾメタン化合物等を挙げることができる。  Examples of the other acid generator (b) include onium salt compounds, halogen-containing compounds, diazoketone compounds, sulfone compounds, sulfonic acid compounds, sulfonimide compounds, and diazomethane compounds.
[0024] 上記ォニゥム塩化合物としては、例えば、ョードニゥム塩、スルホニゥム塩、ホスホニ ゥム塩、ジァゾニゥム塩、ピリジニゥム塩等を挙げること力 Sできる。具体的には、例えば 、ジフエニノレョードニゥムトリフノレオロメタンスノレホネート、ジフエニノレョードニゥムー p ートノレエンスノレホネート、ジフエニノレョードニゥムへキサフノレオ口アンチモネート、ジフ ェニノレョードニゥムへキサフノレオ口ホスフェート、ジフエニノレョードニゥムテトラフノレォロ ボレート、 トリフエニノレスノレホニゥムトリフリオロメタンスノレホネート、 トリフエニノレスノレホニ ゥム一 p トノレエンスノレホネート、トリフエニノレスノレホニゥムへキサフノレオ口アンチモネ ート、 4 tーブチノレフエ二ノレ.ジフエニノレスノレホニゥムトリフノレオロメタンスノレホネート、 4— t ブチノレフエニノレ'ジフエニノレスノレホニゥム一 p トノレエンスノレホネート、 1 - (4, 7 ジブトキシー 1 ナフタレニル)テトラヒドロチォフエニゥムトリフルォロメタンスルホ ナート等を挙げることができる。  [0024] Examples of the above-mentioned onium salt compounds include odonium salts, sulfonium salts, phosphonium salts, diazonium salts, pyridinium salts, and the like. Specifically, for example, diphenenoleo trimethyloroleomethane methane norephonate, diphenenoleo de noorne mutono renenos nore honate, diphenenoleo de noordone hexaph noreo mouth. Antimonate, Diphenenoredonium Hexafnoreo Mouth Phosphate, Diphenenorenodon Tetrafluororeborate, Triphenenoresnorehonium Trifriolomethanes Norephonate, Triphenenoresnorephoni 1-tonolencenorephonate, trifenenolesnorehonome hexaphnore mouth antimonate, 4 tert-butenolevenore, diphenenolesnorehonorium trifnoreolomethane senophonate, 4-t Norefeninor 'Diphnenores Norehonium p Tonorensnorephonate, 1-(4, 7 Dibutoxy 1 And naphthalenyl) tetrahydrothiophenetrifluoromethanesulfonate.
[0025] 上記ハロゲン含有化合物としては、例えば、ハロアルキル基含有炭化水素化合物、 ノ、口アルキル基含有複素環式化合物等を挙げることができる。具体的には、例えば、 [0025] Examples of the halogen-containing compound include haloalkyl group-containing hydrocarbon compounds, and haloalkyl group-containing heterocyclic compounds. Specifically, for example,
1 , 10 ジブ口モー n デカン、 1 , 1—ビス(4 クロ口フエ二ノレ)一 2, 2, 2 トリクロ口 ェタン、フエニル一ビス(トリクロロメチル) 1 , 3, 5—トリアジン、 4—メトキシフエニル —ビス(トリクロロメチル) 1 , 3, 5—トリァジン、スチリル一ビス(トリクロロメチル) 1 , 3, 5 トリアジン、ナフチノレービス(トリクロロメチノレ)一 1 , 3, 5 トリアジン、 2, 4 ト リクロロメチル(ピぺロニル) 1 , 3, 5—トリアジン、 2—(1 , 3—べンゾジォキソール —5—ィル) 4, 6—ビス(トリクロロメチル) 1 , 3, 5—トリァジン等の s トリアジン誘 導体を挙げること力 Sできる。 1, 10 Jib mouth m decane, 1, 1-bis (4-crophine phenenole) 1, 2, 2, 2 Triclo mouth ethane, phenyl bis (trichloromethyl) 1, 3, 5-triazine, 4-methoxy Phenyl —bis (trichloromethyl) 1,3,5-triazine, styryl monobis (trichloromethyl) 1,3,5 triazine, naphthinolebis (trichloromethinole) 1,3,5 triazine, 2,4 trichloromethyl ( Piperonyl) 1,3,5-triazine, 2- (1,3-benzodioxol) —5—yl) 4, 6-bis (trichloromethyl) 1, 3, 5-trisazine and other s-triazine derivatives can be cited.
[0026] 上記ジァゾケトン化合物としては、例えば、 1 , 3 ジケトー 2—ジァゾ化合物、ジァ ゾベンゾキノン化合物、ジァゾナフトキノン化合物等を挙げることができる。具体的に は、例えば、フエノール類の 1 , 2—ナフトキノンジアジドー 4ースルホン酸エステル化 合物等が挙げられる。  [0026] Examples of the diazoketone compound include 1,3 diketo 2-diazo compound, diazobenzoquinone compound, diazonaphthoquinone compound and the like. Specific examples include 1,2-naphthoquinonediazido 4-sulfonic acid ester compounds of phenols.
[0027] 上記スルホン化合物としては、例えば、 βーケトスルホン化合物、 β スルホニルス ルホン化合物及びこれらの化合物の α ジァゾ化合物等を挙げることができる。具 体的には、例えば、 4ートリスフエナシルスルホン、メシチルフエナシルスルホン、ビス( フエナシルスルホニル)メタン等を挙げることができる。  [0027] Examples of the sulfone compounds include β-ketosulfone compounds, β sulfonylsulfone compounds, α diazo compounds of these compounds, and the like. Specific examples include 4-trisphenacylsulfone, mesitylphenacylsulfone, bis (phenacylsulfonyl) methane, and the like.
[0028] 上記スルホン酸化合物としては、例えば、アルキルスルホン酸エステル類、ハロア ノレキルスルホン酸エステル類、ァリールスルホン酸エステル類、イミノスルホネート類 等を挙げること力 Sできる。具体的には、例えば、ベンゾイントシレート、ピロガローノレトリ 一二トロべンジル ρ—トルエンスルホネート等を挙げることができる。  [0028] Examples of the sulfonic acid compound include alkyl sulfonic acid esters, halo aralkyl sulfonic acid esters, aryl sulfonic acid esters, imino sulfonates, and the like. Specifically, for example, benzoin tosylate, pyrogalronoletri twelve trobenzyl ρ-toluenesulfonate and the like can be mentioned.
[0029] 上記スルホンイミド化合物としては、例えば、 Ν (トリフルォロメチルスルホニルォ キシ)スクシンイミド、 Ν- (トリフルォロメチルスルホニルォキシ)フタルイミド、 Ν- (トリ フルォロメチルスルホニルォキシ)ジフエニルマレイミド、 Ν— (トリフルォロメチルスル ホニルォキシ)ビシクロ [2· 2. 1]ヘプトー 5 ェン 2, 3 ジカルボキシイミド、 Ν—( トリフルォロメチルスルホュルォキシ)ナフチルイミド等を挙げることができる。 [0029] Examples of the sulfonimide compound include Ν (trifluoromethylsulfonyloxy) succinimide, Ν- (trifluoromethylsulfonyloxy) phthalimide, Ν- (trifluoromethylsulfonyloxy) diphf. Enylmaleimide, Ν- (trifluoromethylsulfonyloxy) bicyclo [2.2.1] hept-5,2,3 dicarboximide, Ν- (trifluoromethylsulfuroxy) naphthylimide, etc. Can do.
[0030] 上記ジァゾメタン化合物としては、例えば、ビス(トリフノレオロメチルスルホニル)ジァ ゾメタン、ビス(シクロへキシノレスノレホニノレ)ジァゾメタン、ビス(フエニノレスノレホニノレ)ジ ァゾメタン等を挙げることができる。 [0030] Examples of the diazomethane compound include bis (trifnoleolomethylsulfonyl) diazomethane, bis (cyclohexenolesnorephoninore) diazomethane, bis (phenenoresnorephoninore) diazomethane, and the like. it can.
[0031] これらの他の酸発生剤(b)は、 1種のみ含有されていてもよいし、 2種以上が含有さ れていてもよい。 [0031] These other acid generators (b) may be contained alone or in combination of two or more.
また、他の酸発生剤 (b)の配合量は、フエノール樹脂 (A) 100重量部に対して、 5 重量部以下であり、好ましくは 3重量部以下、より好ましくは 1重量部以下である。  The amount of the other acid generator (b) is 5 parts by weight or less, preferably 3 parts by weight or less, more preferably 1 part by weight or less with respect to 100 parts by weight of the phenol resin (A). .
[0032] 〔1 3〕(C)架橋剤 本発明における「架橋剤」(以下、「架橋剤(c)」ともいう。)は、前記フエノール樹脂([0032] [1 3] (C) Crosslinking agent In the present invention, the “crosslinking agent” (hereinafter also referred to as “crosslinking agent (c)”) is the phenol resin (
A)と反応する架橋成分 (硬化成分)として作用するものであれば、特に限定されなレ、 。上記架橋剤(C)としては、例えば、分子中に少なくとも 2つ以上のアルキルエーテ ノレ化されたアミノ基を有する化合物、ォキシラン環含有化合物、チイラン環含有化合 物、ォキセタニル基含有化合物、イソシァネート基含有化合物(ブロック化されたもの を含む)等を挙げること力 Sできる。 If it acts as a crosslinking component (curing component) that reacts with A), it is not particularly limited. Examples of the crosslinking agent (C) include compounds having at least two alkyl etherated amino groups in the molecule, oxsilane ring-containing compounds, thiirane ring-containing compounds, oxetanyl group-containing compounds, and isocyanate groups. It is possible to list compounds (including blocked ones).
[0033] 上記分子中に少なくとも 2つ以上のアルキルエーテル化されたアミノ基を有する化 合物としては、例えば、(ポリ)メチロール化メラミン、(ポリ)メチロール化グリコールゥリ ノレ、(ポリ)メチロール化べンゾグアナミン、(ポリ)メチロール化ゥレア等の窒素化合物 中の活性メチロール基(CH OH基)の全部又は一部(少なくとも 2つ)がアルキルェ [0033] Examples of the compound having at least two or more alkyl etherified amino groups in the molecule include (poly) methylolated melamine, (poly) methylolated glycolurinole, (poly) methylol. All or part (at least two) of the active methylol groups (CH OH groups) in nitrogen compounds such as benzoguanamine chloride and (poly) methylol urea are alkyl ether
2  2
一テル化された化合物を挙げることができる。ここで、アルキルエーテルを構成するァ ルキル基としては、メチル基、ェチル基又はブチル基が挙げられ、互いに同一であつ てもよいし、異なっていてもよい。また、アルキルエーテル化されていないメチロール 基は、一分子内で自己縮合していてもよぐ二分子間で縮合して、その結果オリゴマ 一成分が形成されていてもよい。具体的には、へキサメトキシメチルメラミン、へキサ ブトキシメチルメラミン、テトラメトキシメチルダリコールゥリル、テトラブトキシメチルグリ コールゥリル等を用いることができる。  Mention may be made of monotelinated compounds. Here, examples of the alkyl group constituting the alkyl ether include a methyl group, an ethyl group, and a butyl group, and they may be the same as or different from each other. Further, a methylol group that is not alkyl etherified may be condensed between two molecules, which may be self-condensed within one molecule, and as a result, an oligomer component may be formed. Specifically, hexamethoxymethyl melamine, hexabutoxymethyl melamine, tetramethoxymethyldalicoluril, tetrabutoxymethylglycoluril and the like can be used.
[0034] 上記ォキシラン環含有化合物としては、ォキシラン環を分子内に含有しているもの であれば特に制限されないが、例えば、フエノールノポラック型エポキシ樹脂、クレゾ ールノポラック型エポキシ樹脂、ビスフエノール型エポキシ樹脂、トリスフエノール型ェ ポキシ樹脂、テトラフエノール型エポキシ樹脂、フエノールーキシリレン型エポキシ樹 脂、ナフトール キシリレン型エポキシ樹脂、フエノールーナフトール型エポキシ樹脂 、フエノールージシクロペンタジェン型エポキシ樹脂、脂環式エポキシ樹脂、脂肪族 エポキシ樹脂等が挙げられる。 [0034] The oxysilane ring-containing compound is not particularly limited as long as it contains an oxysilane ring in the molecule. For example, phenol nopolac epoxy resin, cresol nopolac epoxy resin, bisphenol epoxy resin , Trisphenol type epoxy resin, tetraphenol type epoxy resin, phenol-xylylene type epoxy resin, naphthol xylylene type epoxy resin, phenol-naphthol type epoxy resin, phenol-dicyclopentagen type epoxy resin, alicyclic type An epoxy resin, an aliphatic epoxy resin, etc. are mentioned.
尚、これらの架橋剤(C)は、 1種単独で用いてもよいし、 2種以上を混合して用いて あよい。  These crosslinking agents (C) may be used alone or in a combination of two or more.
[0035] また、これらの架橋剤(C)のなかでも、分子中に少なくとも 2つ以上のアルキルエー テル化されたアミノ基を有する化合物、ォキシラン環含有化合物が好ましい。更には 、分子中に少なくとも 2つ以上のアルキルエーテル化されたアミノ基を有する化合物 及びォキシラン環含有化合物を併用することがより好ましい。 [0035] Of these crosslinking agents (C), compounds having at least two alkyl etherated amino groups in the molecule and oxsilane ring-containing compounds are preferred. Furthermore More preferably, a compound having at least two alkyl etherified amino groups in the molecule and an oxysilane ring-containing compound are used in combination.
[0036] 本発明における架橋剤(C)の配合量は、前記フエノール樹脂 (A) 100重量部に対 して、 1〜; 100重量部であることが好ましぐより好ましくは 5〜50重量部である。この 架橋剤(C)の配合量が 1〜; 100重量部である場合には、硬化反応が十分に進行し、 得られる硬化膜は高解像度で良好なパターン形状を有し、耐熱性、電気絶縁性に優 れるため好ましい。 [0036] The blending amount of the crosslinking agent (C) in the present invention is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight with respect to 100 parts by weight of the phenol resin (A). Part. When the amount of the crosslinking agent (C) is 1 to 100 parts by weight, the curing reaction proceeds sufficiently, and the resulting cured film has a high resolution, good pattern shape, heat resistance, It is preferable because of its excellent insulation.
また、アルキルエーテル化されたアミノ基を有する化合物及びォキシラン環含有化 合物を併用する際、ォキシラン環含有化合物の含有割合は、アルキルエーテル化さ れたァミノ基を有する化合物及びォキシラン環含有化合物の合計を 100重量%とし た場合に、 50重量%以下であることが好ましぐより好ましくは 5〜40重量%である。 この場合、得られる硬化膜は、高解像性を損なうことなく耐薬品性にも優れるため好 ましい。  In addition, when the alkyl etherified amino group-containing compound and the oxsilane ring-containing compound are used in combination, the content ratio of the oxsilane ring-containing compound is the same as that of the compound having the alkyl etherified amino group and the oxsilane ring-containing compound. When the total is 100% by weight, it is preferably 50% by weight or less, more preferably 5 to 40% by weight. In this case, the obtained cured film is preferable because it is excellent in chemical resistance without impairing high resolution.
[0037] 〔 1 4〕(D)架橋ポリマー粒子  [0037] [14] (D) Crosslinked polymer particles
本発明の絶縁膜形成用感光性樹脂組成物には、得られる硬化膜の耐久性ゃ熱衝 撃性を向上させるために架橋ポリマー粒子(以下、「架橋ポリマー粒子(D)」ともレ、う。 )を更に含有させることができる。  In the photosensitive resin composition for forming an insulating film of the present invention, in order to improve the durability or thermal shock resistance of the cured film obtained, it is also referred to as a crosslinked polymer particle (hereinafter referred to as “crosslinked polymer particle (D)”). )) Can be further contained.
上記架橋ポリマー粒子(D)としては、この架橋ポリマー粒子を構成する重合体のガ ラス転移温度 (Tg)が 0°C以下であれば特に限定されな!/、が、不飽和重合性基を 2個 以上有する架橋性モノマー(以下、単に「架橋性モノマー」という。)と、架橋ポリマー 粒子(D)の Tgが 0°C以下となるように選択される 1種又は 2種以上の「他のモノマー」 と、を共重合したものが好ましい。特に、上記他のモノマーを 2種以上併用し、且つ他 のモノマーのうちの少なくとも 1種が、カノレポキシノレ基、エポキシ基、アミノ基、イソシァ ネート基、ヒドロキシル基等の重合性基以外の官能基を有するものであることが好ま しい。  The crosslinked polymer particle (D) is not particularly limited as long as the glass transition temperature (Tg) of the polymer constituting the crosslinked polymer particle is 0 ° C. or lower! /, But has an unsaturated polymerizable group. Two or more crosslinkable monomers (hereinafter simply referred to as “crosslinkable monomers”) and one or more “others” selected so that the Tg of the crosslinked polymer particles (D) is 0 ° C. or less. And a monomer obtained by copolymerization with a monomer. In particular, two or more of the above-mentioned other monomers are used in combination, and at least one of the other monomers has a functional group other than a polymerizable group such as a canolepoxinole group, an epoxy group, an amino group, an isocyanate group, or a hydroxyl group. It is preferable to have it.
[0038] ところで、従来の感放射線性絶縁樹脂組成物は、密着性を向上させる目的で液状 ゴムを含有させる場合がある(特開 2004 - 191816号公報参照)が、この液状ゴムを 含有すると、解像性が低下するという傾向があった。このような液状ゴムは、室温で流 動性を有するものを意味することが多ぐ例えば、アクリルゴム (ACM)、アタリロニトリ ノレ'ブタジエンゴム(NBR)、アタリロニトリノいアタリレート'ブタジエンゴム(NBA)等が 知られている。本発明の絶縁膜形成用感光性樹脂組成物は上記液状ゴムを基本的 に含有しな!/、ことを特徴とする。 [0038] By the way, the conventional radiation-sensitive insulating resin composition may contain a liquid rubber for the purpose of improving adhesion (see Japanese Patent Application Laid-Open No. 2004-191816). There was a tendency for the resolution to decrease. Such liquid rubber flows at room temperature. For example, acrylic rubber (ACM), attalononitrile tributadiene butadiene rubber (NBR), alitrononitrile triacrylate butadiene rubber (NBA) and the like are often known. The photosensitive resin composition for forming an insulating film of the present invention is characterized in that it basically does not contain the liquid rubber.
ここで、本発明の絶縁膜形成用感光性樹脂組成物に含有する架橋ポリマー粒子( D)は、粒子状の架橋された共重合体であるため組成物中では分散された状態にあ る。これに対し、上記液状ゴムは、溶液中で、溶剤や樹脂と相溶した状態にある点で 架橋ポリマー粒子(D)と異なる。従って、架橋ポリマー粒子(D)を含有することにより 、液状ゴムを含有する場合に比べて、解像性に優れ且つ硬化膜のガラス転移温度の 低下が極めて小さい絶縁膜形成用感光性樹脂組成物を得ることができる。また、架 橋ポリマー粒子(D)を用いることにより得られる硬化膜は耐熱衝撃性にも優れる。 液状ゴムは、上述の通り、組成物中で他の成分と相溶した状態にある。従って、他 の成分との相溶性を確保するためには、分子量や組成物中の含有量に制限がある。 これに対し、架橋ポリマー粒子(D)は、組成物中で分散状態にあるので、得られる硬 化膜の耐クラック性ゃ伸び、絶縁性等の効果を得るのに十分な含有量を確保するこ と力 Sできる。以上の点から、本発明の絶縁膜形成用感光性樹脂組成物は、解像性、 耐クラック性、伸び、及び絶縁性に優れるものである。  Here, since the crosslinked polymer particle (D) contained in the photosensitive resin composition for forming an insulating film of the present invention is a particulate crosslinked copolymer, it is in a dispersed state in the composition. On the other hand, the liquid rubber is different from the crosslinked polymer particle (D) in that it is in a state compatible with a solvent or a resin in a solution. Therefore, by containing the crosslinked polymer particles (D), the photosensitive resin composition for forming an insulating film is superior in resolution as compared with the case of containing liquid rubber and the glass transition temperature of the cured film is extremely low. Can be obtained. Further, the cured film obtained by using the bridge polymer particles (D) is excellent in thermal shock resistance. As described above, the liquid rubber is in a state compatible with other components in the composition. Therefore, in order to ensure compatibility with other components, there are limitations on the molecular weight and the content in the composition. On the other hand, since the crosslinked polymer particles (D) are in a dispersed state in the composition, the content of the cured film obtained is sufficient to obtain effects such as crack resistance, elongation and insulation. This force S is possible. From the above points, the photosensitive resin composition for forming an insulating film of the present invention is excellent in resolution, crack resistance, elongation, and insulation.
[0039] 上記架橋性モノマーとしては、例えば、ジビュルベンゼン、ジァリルフタレート、ェチ レングリコールジ(メタ)アタリレート、プロピレングリコールジ(メタ)アタリレート、トリメチ ロールプロパントリ(メタ)アタリレート、ペンタエリスリトールトリ(メタ)アタリレート、ポリ エチレングリコールジ(メタ)アタリレート、ポリプロピレングリコールジ(メタ)アタリレート 等の重合性不飽和基を複数有する化合物を挙げることができる。これらのなかでも、 ジビュルベンゼンが好まし!/、。  [0039] Examples of the crosslinkable monomer include dibutylbenzene, diallyl phthalate, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate. And compounds having a plurality of polymerizable unsaturated groups, such as pentaerythritol tri (meth) acrylate, polyethylene glycol di (meth) acrylate and polypropylene glycol di (meth) acrylate. Of these, dibulenebenzene is preferred!
[0040] 上記架橋ポリマー粒子(D)を製造する際に用いられる上記架橋性モノマーは、共 重合に用いられる全モノマー 100重量%に対して、 1〜20重量%であることが好まし く、より好ましくは 2〜; 10重量%である。  [0040] The crosslinkable monomer used in producing the crosslinked polymer particles (D) is preferably 1 to 20% by weight with respect to 100% by weight of the total monomers used for copolymerization. More preferably 2 to 10% by weight.
[0041] また、上記他のモノマーとしては、例えば、ブタジエン、イソプレン、ジメチルブタジ ェン、クロ口プレン、 1 , 3—ペンタジェン等のジェン化合物、(メタ)アクリロニトリル、 a クロ口アクリロニトリル、 α—クロロメチルアクリロニトリル、 α—メトキシアタリロニトリ ル、 α—エトキシアクリロニトリル、クロトン酸二トリル、ケィ皮酸二トリル、ィタコン酸ジニ トリル、マレイン酸ジニトリル、フマル酸ジニトリル等の不飽和二トリル化合物類、(メタ) アクリルアミド、 N, N,一メチレンビス(メタ)アクリルアミド、 N, N,一エチレンビス(メタ )アクリルアミド、 N, N, 一へキサメチレンビス(メタ)アクリルアミド、 N ヒドロキシメチ ル(メタ)アクリルアミド、 N— (2—ヒドロキシェチル)(メタ)アクリルアミド、 N, N ビス( 2—ヒドロキシェチル)(メタ)アクリルアミド、クロトン酸アミド、ケィ皮酸アミド等の不飽 和アミド類、 (メタ)アクリル酸メチル、 (メタ)アクリル酸ェチル、 (メタ)アクリル酸プロピ ノレ、 (メタ)アクリル酸ブチル、 (メタ)アクリル酸へキシル、 (メタ)アクリル酸ラウリル、ポ リエチレングリコール(メタ)アタリレート、ポリプロピレングリコール(メタ)アタリレート等 の(メタ)アクリル酸エステル類、スチレン、 α—メチルスチレン、 ο メトキシスチレン、 ρ ヒドロキシスチレン、 ρ—イソプロぺユルフェノール等の芳香族ビュル化合物、ビス フエノーノレ Αのジグリシジノレエーテノレ、グリコーノレのジグリシジノレエーテノレ等と(メタ) アクリル酸、ヒドロキシアルキル (メタ)アタリレート等との反応によって得られるェポキ シ(メタ)アタリレート及び、ヒドロキシアルキル (メタ)アタリレートとポリイソシアナートと の反応によって得られるウレタン (メタ)アタリレート類、グリシジル (メタ)アタリレート、 ( メタ)ァリルグリシジルエーテル等のエポキシ基含有不飽和化合物、 (メタ)アクリル酸 、ィタコン酸、コハク酸一 /3 - (メタ)アタリ口キシェチル、マレイン酸一 β - (メタ)ァク リロキシェチル、フタル酸ー β (メタ)アタリ口キシェチル、へキサヒドロフタル酸ー /3[0041] Examples of the other monomers include butadiene, isoprene, dimethylbutadiene, black-opened polyne, 1,3-pentagen and other gen compounds, (meth) acrylonitrile, a Black port acrylonitrile, alpha-chloromethyl acrylonitrile, alpha-methoxy Atari b Nitrile Le, alpha - ethoxy acrylonitrile, crotonic acid nitrile, Kei cinnamic acid nitrile, Itakon acid Gini tolyl, dinitrile maleate, unsaturated and fumaric acid dinitrile Nitryl compounds, (meth) acrylamide, N, N, monomethylene bis (meth) acrylamide, N, N, monoethylene bis (meth) acrylamide, N, N, monohexamethylene bis (meth) acrylamide, N hydroxymethy Unsaturated amides such as ru (meth) acrylamide, N- (2-hydroxyethyl) (meth) acrylamide, N, N bis (2-hydroxyethyl) (meth) acrylamide, crotonic acid amide, and key cinnamate amide , Methyl (meth) acrylate, ethyl (meth) acrylate, (meth (Meth) acrylic acid propinole, (meth) butyl acrylate, (meth) hexyl acrylate, (meth) lauryl acrylate, polyethylene glycol (meth) acrylate, polypropylene glycol (meth) acrylate Acrylic esters, styrene, α-methyl styrene, ο methoxy styrene, ρ hydroxy styrene, ρ-isopropure phenol and other aromatic bur compounds, bis-phenolate ジ diglycidino enotenole, glyconole diglycidino enotenole Etc. and (meth) acrylic acid, hydroxyalkyl (meth) atarylate, etc. obtained by the reaction of epoxy (meth) atalylate, and hydroxyalkyl (meth) acrylate and polyisocyanate obtained by reaction ( Meta) Relates, glycidyl (meth) atalylate, unsaturated compounds containing epoxy groups such as (meth) aryl glycidyl ether, (meth) acrylic acid, itaconic acid, succinic acid 1/3-(meth) atari mouth quichetil, maleic acid Β- (Meth) acrylochetyl, phthalic acid-β (Meth) atari mouth kichetil, hexahydrophthalic acid-/ 3
- (メタ)アタリロキシェチル等の不飽和酸化合物、ジメチルァミノ (メタ)アタリレート、 ジェチルァミノ (メタ)アタリレート等のアミノ基含有不飽和化合物、 (メタ)アクリルアミド-Unsaturated acid compounds such as (meth) ataryloxetyl, amino group-containing unsaturated compounds such as dimethylamino (meth) atalylate, jetylamino (meth) atalylate, (meth) acrylamide
、ジメチル (メタ)アクリルアミド等のアミド基含有不飽和化合物、ヒドロキシェチル (メタ ト等のヒドロキシル基含有不飽和化合物等を挙げることができる。 Amide group-containing unsaturated compounds such as dimethyl (meth) acrylamide, and hydroxyethyl-containing unsaturated compounds such as hydroxyethyl (methato).
これらの他のモノマーのなかでも、ブタジエン、イソプレン、 (メタ)アクリロニトリル、 ( メタ)アクリル酸アルキルエステル類、スチレン、 ρ ヒドロキシスチレン、 ρ イソプロぺ ユルフェノール、グリシジル(メタ)アタリレート、 (メタ)アクリル酸、ヒドロキシアルキル( メタ)アタリレート類等が好まし!/、。 [0043] また、上記架橋ポリマー粒子(D)の製造には、他のモノマーとして、少なくも 1種の ジェン化合物、具体的にはブタジエンが用いられていることが好ましい。このようなジ ェン化合物は、共重合に用いる全モノマー 100重量%に対して 20〜80重量%であ ること力好ましく、より好ましくは 30〜70重量%である。他のモノマーとして、上記ブタ ジェン等のジェン化合物が全モノマー 100重量%に対して 20〜80重量%で共重合 される場合には、架橋ポリマー粒子(D)がゴム状の軟らかい微粒子となり、得られる 硬化膜にクラック (割れ)が発生するのを防止でき、耐久性に優れた硬化膜を得ること ができる。 Among these other monomers, butadiene, isoprene, (meth) acrylonitrile, (meth) acrylic acid alkyl esters, styrene, ρ hydroxystyrene, ρ isopropyl phenol, glycidyl (meth) acrylate, (meth) acrylic Acids, hydroxyalkyl (meth) acrylates, etc. are preferred! [0043] In addition, in the production of the crosslinked polymer particles (D), it is preferable that at least one type of gen compound, specifically butadiene, is used as another monomer. Such a gen compound is preferably 20 to 80% by weight, more preferably 30 to 70% by weight, based on 100% by weight of all monomers used for copolymerization. When other gen compounds such as butadiene are copolymerized at 20 to 80% by weight with respect to 100% by weight of the total monomers as other monomers, the crosslinked polymer particles (D) become rubbery soft fine particles. It is possible to prevent cracks from occurring in the cured film and to obtain a cured film having excellent durability.
[0044] 尚、上記架橋ポリマー粒子(D)は、 1種単独で用いてもよいし、 2種以上を混合して 用いてもよい。  [0044] The crosslinked polymer particles (D) may be used singly or in combination of two or more.
[0045] また、上記架橋ポリマー粒子(D)の平均粒径は、通常 30〜500nmであり、好ましく は 40〜200應、更に好ましくは 50〜 120應である。  [0045] The average particle size of the crosslinked polymer particles (D) is usually 30 to 500 nm, preferably 40 to 200, and more preferably 50 to 120.
この架橋ポリマー粒子(D)の粒径のコントロール方法は特に限定されないが、例え ば、乳化重合により架橋ポリマー粒子を合成する場合、使用する乳化剤の量により乳 化重合中のミセルの数を制御し、粒径をコントロールすることができる。  The method for controlling the particle size of the crosslinked polymer particles (D) is not particularly limited. For example, when the crosslinked polymer particles are synthesized by emulsion polymerization, the number of micelles during the emulsion polymerization is controlled by the amount of the emulsifier used. The particle size can be controlled.
尚、本発明における架橋ポリマー粒子(D)の平均粒径とは、大塚電子製の光散乱 流動分布測定装置「LPA— 3000」を用い、架橋ポリマー粒子の分散液を常法に従 つて希釈して測定した値である。  The average particle diameter of the crosslinked polymer particles (D) in the present invention is determined by diluting a dispersion of crosslinked polymer particles according to a conventional method using a light scattering flow distribution measuring device “LPA-3000” manufactured by Otsuka Electronics. Measured value.
[0046] 上記架橋ポリマー粒子(D)の配合量は、前記フエノール樹脂 (A) 100重量部に対 して、 0. 5〜50重量部であることが好ましぐより好ましくは 1〜30重量部である。この 架橋ポリマー粒子(D)の配合量が 0. 5〜50重量部である場合には、他の成分との 相溶性又は分散性に優れ、得られる硬化膜の熱衝撃性及び耐熱性を向上させること ができる。 [0046] The amount of the crosslinked polymer particles (D) blended is preferably 0.5 to 50 parts by weight, more preferably 1 to 30 parts by weight with respect to 100 parts by weight of the phenol resin (A). Part. When the blended amount of the crosslinked polymer particles (D) is 0.5 to 50 parts by weight, it has excellent compatibility or dispersibility with other components, and improves the thermal shock resistance and heat resistance of the resulting cured film. It can be made.
[0047] 〔1 5〕(E)密着助剤 [0047] [1 5] (E) Adhesion aid
また、本発明の絶縁膜形成用感光性樹脂組成物には、基材との密着性を向上させ るために、密着助剤を含有させることができる。  In addition, the photosensitive resin composition for forming an insulating film of the present invention can contain an adhesion assistant in order to improve the adhesion to the substrate.
上記密着助剤としては、例えば、カルボキシル基、メタクリロイル基、イソシァネート 基、エポキシ基等の反応性置換基を有する官能性シランカップリング剤等が挙げら れる。 Examples of the adhesion assistant include a functional silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group. It is.
具体的には、トリメトキシシリル安息香酸、 Ί—メタクリロキシプロピルトリメトキシシラン 、ビュルトリァセトキシシラン、ビュルトリメトキシシラン、 γ—イソシアナートプロピルトリ エトキシシラン、 Ίーグリシドキシプロビルトリメトキシシラン、 β一(3, 4—エポキシシ ノレ)イソシァヌレート等が挙げられる。これらの密着助剤は、 1種単独で用いてもよいしSpecific examples include trimethoxysilylbenzoic acid, Ί -methacryloxypropyltrimethoxysilane, butyltriacetoxysilane , butyltrimethoxysilane , γ-isocyanatopropyltriethoxysilane, Ί -glycidoxypropyl trimethoxysilane , Β- (3,4-epoxysilane) isocyanurate, and the like. These adhesion aids may be used alone or in combination.
、 2種以上を混合して用いてもよい。 Two or more kinds may be mixed and used.
[0048] 上記密着助剤の配合量は、前記フエノール樹脂 (Α) 100重量部に対して、 0. 2〜[0048] The amount of the adhesion assistant is 0.2 to 100 parts by weight of the phenol resin (部).
10重量部であることが好ましぐより好ましくは 0. 5〜8重量部である。この密着助剤 の配合量が 0. 2〜; 10重量部である場合には、貯蔵安定性に優れ、且つ良好な密着 性を得ることができるため好ましレ、。 It is preferably 10 parts by weight, more preferably 0.5 to 8 parts by weight. When the blending amount of the adhesion aid is 0.2 to 10 parts by weight, it is preferable because it has excellent storage stability and good adhesion.
[0049] 〔1 6〕(F)溶剤 [0049] [16] (F) Solvent
また、本発明の絶縁膜形成用感光性樹脂組成物には、樹脂組成物の取り扱い性 を向上させたり、粘度や保存安定性を調節したりするために溶剤を含有させることが できる。  In addition, the photosensitive resin composition for forming an insulating film of the present invention can contain a solvent in order to improve the handleability of the resin composition and to adjust the viscosity and storage stability.
上記溶剤は、特に制限されないが、例えば、エチレングリコールモノメチルエーテル アセテート、エチレングリコールモノェチルエーテルアセテート等のエチレングリコー ノレモノァノレキノレエーテノレアセテート類;プロピレングリコーノレモノメチノレエーテノレ、プ ロピレングリコーノレモノェチノレエーテノレ、プロピレングリコーノレモノプロピノレエーテノレ、 プロピレングリコーノレモノブチノレエーテノレ等のプロピレングリコーノレモノァノレキノレエ一 テノレ類;プロピレングリコーノレジメチノレエーテノレ、プロピレングリコーノレジェチノレエ一 テノレ、プロピレングリコーノレジプロピノレエーテノレ、プロピレングリコーノレジブチノレエ一 テル等のプロピレングリコールジアルキルエーテル類;プロピレングリコールモノメチ ノレエーテノレアセテート、プロピレングリコーノレモノェチノレエーテノレアセテート、プロピ レングリコーノレモノプロピノレエーテノレアセテート、プロピレングリコーノレモノブチノレエー テルアセテート等のプロピレングリコールモノアルキルエーテルアセテート類;ェチル セロソルブ、ブチルセ口ソルブ等のセロソルブ類、ブチルカルビトール等のカルビトー ル類;乳酸メチル、乳酸ェチル、乳酸 n プロピル、乳酸イソプロピル等の乳酸エステ ル類;酢酸ェチル、酢酸 n プロピル、酢酸イソプロピル、酢酸 n ブチル、酢酸イソ ブチル、酢酸 n ァミル、酢酸イソァミル、プロピオン酸イソプロピル、プロピオン酸 n ーブチル、プロピオン酸イソブチル等の脂肪族カルボン酸エステル類; 3—メトキシプ 口ピオン酸メチル、 3—メトキシプロピオン酸ェチル、 3—エトキシプロピオン酸メチル、 3—エトキシプロピオン酸ェチル、ピルビン酸メチル、ピルビン酸ェチル等の他のエス テル類;トルエン、キシレン等の芳香族炭化水素類; 2 へプタノン、 3 へプタノン、 4一へプタノン、シクロへキサノン等のケトン類; N ジメチルホルムアミド、 N メチノレ ァセトアミド、 N, N ジメチルァセトアミド、 N メチルピロリドン等のアミド類; γ—ブ チロラクン等のラタトン類を挙げることができる。これらの溶剤は、 1種単独で用いても よいし、 2種以上を混合して用いてもよい。 The solvent is not particularly limited. For example, ethylene glycol monomethyl etherate acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monomethyl methacrylate ether, propylene Propylene glyconolemonorenoateolate, such as glycolenolemonochinoleatenore, propyleneglycolenomonopropinoreatenore, propyleneglycolenomonobutinoreethenore; Propylene glycol dialkyl ethers such as Nollechinolene Tenole, Propylene Glyconoresin Propinoreateoretol, Propylene Glycolinole Butinoleite; Propylene glycol monoalkyl ether acetates, such as pyrene glycol monomethylenoate acetate, propylene glycolenomonoethylenoate acetate, propylene glycolenomonopropinoatenoate acetate, propylene glycolanol monobutinoate ether acetate; Cellosolves such as cetyl cellosolve and butylcetosolve, carbitols such as butylcarbitol; lactic acid esters such as methyl lactate, ethyl lactate, n-propyl lactate, and isopropyl lactate Aliphatic carboxylic acid esters such as ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, isobutyl propionate; -Other esters such as methyl methoxypropyl pionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate; aromatics such as toluene and xylene Hydrocarbons; ketones such as 2 heptanone, 3 heptanone, 4 monoheptanone, cyclohexanone; amides such as N dimethylformamide, N methinoleacetoamide, N, N dimethylacetamide, N methylpyrrolidone; γ —Latatons such as butyrolacun . These solvents may be used alone or in combination of two or more.
[0050] 〔1 7〕他の添加剤  [0050] [17] Other additives
また、本発明の絶縁膜形成用感光性樹脂組成物には、必要に応じて他の添加剤 を本発明の特性を損なわない程度に含有させることができる。このような他の添加剤 としては、無機フィラー、増感剤、クェンチヤ一、レべリング剤'界面活性剤、フエノー ル性低分子化合物等が挙げられる。  In addition, the photosensitive resin composition for forming an insulating film of the present invention can contain other additives as necessary so as not to impair the characteristics of the present invention. Examples of such other additives include inorganic fillers, sensitizers, quenchers, leveling agents'surfactants, and phenolic low molecular compounds.
[0051] 上記レべリング剤'界面活性剤は、樹脂組成物の塗布性を向上さるために通常添 加される。このようなレべリング剤 ·界面活性剤は特に限定されないが、例えば、ポリ ォキシエチレンラウリルエーテル、ポリオキシエチレンステリアルエーテル、ポリオキシ エチレンセチノレエーテノレ、ポリ才キシエチレン才レインエーテノレ等のポリ才キシェチ レンアルキルエーテル類、ポリオキシエチレンォクチルフエノールエーテル、ポリオキ シエチレンノユルフェノールエーテル等のポリオキシエチレンアルキルァリルエーテ ル類、ポリオキシエチレンポリオキシプロピレンブロックコポリマー類、ソルビタンモノラ ゥレート、ソルビタンモノパルミテート、ソルビタンモノステアレート等のソルビタン脂肪 酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソル ビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシェ チレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリ ォキシエチレンソルビタン脂肪酸エステルのノニオン系レべリング剤 .界面活性剤等 力 S挙げられる。更には、商品名で、エフトップ EF301、同 EF303、同 EF352 (以上、 株式会社トーケムプロダクツ製)、メガファック Fl 71、同 F172、同 F173 (以上、大日 本インキ化学工業株式会社製)、フロラード FC430、同 FC431 (以上、住友スリーェ ム株式会社製)、アサヒガード AG710、サーフロン S— 381、同 S— 382、 SC101 , S C102、 SC103、 SC104、 SC105、 SC106、サーフィノーノレ E1004、 KH— 10、 K H— 20、 KH— 30、 KH— 40 (以上、旭硝子株式会社製)、フタージェント 250、同 2 51、同 222F、 FTX— 218 (以上、株式会社ネオス製)等のフッ素系レべリング剤.界 面活性剤、オルガノシロキサンポリマー KP341、 X— 70— 092、 X— 70— 093 (以上 、信越化学工業株式会社製)、 SH8400 (東レ 'ダウコーユング製)、アクリル酸系又 (まメタクリノレ酸系ポリフロー No. 75、同 No. 77、同 No. 90、同 No. 95 (以上、共栄 社油脂化学工業株式会社製)等が挙げられる。 [0051] The leveling agent 'surfactant is usually added to improve the coating property of the resin composition. Such a leveling agent / surfactant is not particularly limited, and examples thereof include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetinoleethenole, poly-poxyethylene-pure rain ethereole and the like. Polyoxyethylene alkyl ethers such as polyalkylene alkyl ethers, polyoxyethylene octyl phenol ether, polyoxyethylene nourol phenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan mono Sorbitan fatty acid esters such as palmitate and sorbitan monostearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxy Sorbitan monostearate, Poriokishe Chile Nso sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc. Poly O carboxymethyl ethylene sorbitan fatty acid ester nonionic leveling agent. Include S surfactants force. Furthermore, the product name is F-top EF301, EF303, EF352 (above, Manufactured by Tochem Products Co., Ltd.), Megafuck Fl 71, F172, F173 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Fluorad FC430, FC431 (above, manufactured by Sumitomo 3M Limited), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfinore E1004, KH-10, KH-20, KH-30, KH-40 (above, manufactured by Asahi Glass Co., Ltd. ), Fluorent Leveling Agents such as 250, 251, 222F, FTX-218 (above, manufactured by Neos Co., Ltd.), surfactants, organosiloxane polymers KP341, X—70-092, X — 70— 093 (above, manufactured by Shin-Etsu Chemical Co., Ltd.), SH8400 (manufactured by Dowco Jung Toray Co., Ltd.), acrylic acid or (methacrylolic acid-based polyflow No. 75, same No. 77, same No. 90, same No. 95 (above, manufactured by Kyoeisha Yushi Chemical Co., Ltd.) It is.
これらのレべリング剤 '界面活性剤は、 1種単独で用いてもよいし、 2種以上を混合 して用いてもよい。  These leveling agents' surfactants may be used singly or in combination of two or more.
[0052] 上記レべリング剤'界面活性剤の配合量は、樹脂溶液中、通常 50〜2000ppmで あること力 S好ましく、より好ましくは 100〜; !OOOppmである。このレべリング剤 '界面活 性剤の配合量が 50〜2000ppmである場合には、段差基板上への均一塗布性が良 好であり、且つ現像時や硬化後の密着性に優れるため好ましい。  [0052] The blending amount of the leveling agent 'surfactant is usually 50 to 2000 ppm in the resin solution, preferably S, more preferably 100 to! OOOppm. When the blending amount of this leveling agent 'surfactant is 50 to 2000 ppm, it is preferable because uniform application onto a stepped substrate is good and adhesion after development and after curing is excellent. .
[0053] また、上記フエノール性低分子化合物としては、例えば、 4, 4'ージヒドロキシジフエ ニルメタン、 4, 4'ージヒドロキシジフエニルエーテル、トリス(4ーヒドロキシフエ二ノレ)メ タン、 1 , 1—ビス(4—ヒドロキシフエ二ル)一 1—フエニルェタン、トリス(4—ヒドロキシ フエ二ノレ)ェタン、 1 , 3—ビス [1一(4ーヒドロキシフエニル) 1ーメチルェチノレ]ベン ゼン、 1 , 4一ビス [1一(4ーヒドロキシフエニル)一 1ーメチルェチノレ]ベンゼン、 4, 6 ビス [1一(4ーヒドロキシフエニル) 1 メチルェチル ] 1 , 3—ジヒドロキシベン ゼン、 1 , 1—ビス(4—ヒドロキシフエ二ル)一 1— [4—〔1— (4—ヒドロキシフエニル) 1ーメチルェチノレ〕フエ二ノレ]ェタン、 1 , 1 , 2, 2—テトラ(4ーヒドロキシフエ二ノレ)ェ タン等が挙げられる。これらのフエノール性低分子化合物は、 1種単独で用いてもよ いし、 2種以上を混合して用いてもよい。  [0053] Examples of the phenolic low molecular weight compound include 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, tris (4-hydroxyphenylenomethane), 1,1- Bis (4-hydroxyphenyl) -1-1-phenylethane, tris (4-hydroxyphenyl) ethane, 1,3-bis [1- (4-hydroxyphenyl) -1-methylethynole] benzene, 1,4 Bis [1 (4-hydroxyphenyl) 1-1-methylethynole] benzene, 4, 6 Bis [1 (4-hydroxyphenyl) 1-methylethyl] 1,1,3-dihydroxybenzene, 1,1-bis (4- 1- [4- [1- (4-hydroxyphenyl) 1-methylethynole] fenenole] ethane, 1,1,2,2,2-tetra (4-hydroxyphenyl) ethane, etc. It is done. These phenolic low molecular weight compounds may be used singly or in combination of two or more.
[0054] このフエノール性低分子化合物の含有割合は、フエノール樹脂 (A)とフエノール性 低分子化合物の合計を 100重量%とした場合に、 40重量%以下であることが好まし く、より好ましくは;!〜 30重量%である。 [0054] The content ratio of the phenolic low molecular compound is preferably 40% by weight or less when the total of the phenolic resin (A) and the phenolic low molecular compound is 100% by weight. And more preferably ;! to 30% by weight.
[0055] 〔1 8〕調製方法  [0055] [18] Preparation method
本発明の絶縁膜形成用感光性樹脂組成物の調製方法は特に限定されず、公知の 方法により調製すること力 Sできる。また、各成分を中に入れ完全に栓をしたサンプル 瓶を、ウェーブローターの上で攪拌することによつても調製することができる。  The method for preparing the photosensitive resin composition for forming an insulating film of the present invention is not particularly limited, and can be prepared by a known method. Alternatively, a sample bottle with each component in it and completely stoppered can be prepared by stirring on a wave rotor.
[0056] [2]硬化膜  [0056] [2] Cured film
本発明における硬化膜は、前記絶縁膜形成用感光性樹脂組成物が硬化されてな ることを特徴とする。  The cured film in the present invention is characterized in that the photosensitive resin composition for forming an insulating film is cured.
前述の本発明にかかる絶縁膜形成用感光性樹脂組成物は、残膜率が高ぐ解像 性に優れていると共に、その硬化膜は電気絶縁性、熱衝撃性等に優れているため、 その硬化膜は、半導体素子、半導体パッケージ等の電子部品の表面保護膜、平坦 化膜、層間絶縁膜材料等として好適に使用することができる。  The above-mentioned photosensitive resin composition for forming an insulating film according to the present invention has a high residual film ratio and excellent resolution, and its cured film is excellent in electrical insulation and thermal shock resistance. The cured film can be suitably used as a surface protective film, planarizing film, interlayer insulating film material, etc. for electronic components such as semiconductor elements and semiconductor packages.
[0057] 本発明の硬化膜を形成するには、まず前述の本発明にかかる絶縁膜形成用感光 性樹脂組成物を支持体 (樹脂付き銅箔、銅張り積層板や金属スパッタ膜を付けたシリ コンウェハーやアルミナ基板等)に塗工し、乾燥して溶剤等を揮発させて塗膜を形成 する。その後、所望のマスクパターンを介して露光することにより酸発生剤(B)から発 生した酸が、次いで行われる加熱処理(以下、この加熱処理を「PEB」という。)を行う ことによって拡散し、この酸の触媒作用により、フエノール樹脂 (A)と架橋剤(C)との 反応を促進させる。次いで、アルカリ性現像液により現像して、未露光部を溶解、除 去することにより所望のパターンを得ることができる。更に、絶縁膜特性を発現させる ために加熱処理を行うことにより、硬化膜を得ることができる。  In order to form the cured film of the present invention, first, the above-mentioned photosensitive resin composition for forming an insulating film according to the present invention was used as a support (with a resin-coated copper foil, a copper-clad laminate, or a metal sputtered film). It is applied to silicon wafers, alumina substrates, etc.) and dried to evaporate the solvent and form a coating film. Thereafter, the acid generated from the acid generator (B) by exposure through a desired mask pattern diffuses by performing a subsequent heat treatment (hereinafter referred to as “PEB”). This acid catalysis promotes the reaction between the phenol resin (A) and the crosslinking agent (C). Next, development is performed with an alkaline developer, and a desired pattern can be obtained by dissolving and removing unexposed portions. Furthermore, a cured film can be obtained by performing a heat treatment to develop the insulating film characteristics.
[0058] 樹脂組成物を支持体に塗工する方法としては、例えば、デイツビング法、スプレー 法、バーコート法、ロールコート法、又はスピンコート法等の塗布方法を用いることが できる。また、塗布膜の厚さは、塗布手段、組成物溶液の固形分濃度や粘度を調節 することにより、適宜制御することができる。例えば、スピンコート法を用いて塗工する 場合には、取り扱い性、膜厚の面内均一性の点から、 20〜10000mPa ' sが好まし い。  [0058] As a method for applying the resin composition to the support, for example, a coating method such as a dating method, a spray method, a bar coat method, a roll coat method, or a spin coat method can be used. Further, the thickness of the coating film can be appropriately controlled by adjusting the solid content concentration and viscosity of the coating means and the composition solution. For example, in the case of coating using a spin coating method, 20 to 10,000 mPa's is preferable from the viewpoint of handleability and in-plane uniformity of film thickness.
露光に用いられる放射線としては、例えば、低圧水銀灯、高圧水銀灯、メタルハラ イドランプ、 g泉ステツノ一、 h泉ステツノ一、 i泉ステツノ一、 gh泉ステツノ一、 ghi泉 ステッパー等の紫外線等が挙げられる。また、露光量としては使用する光源や樹脂 膜厚等によって適宜選定されるが、例えば、高圧水銀灯からの紫外線照射の場合、 樹脂膜厚:!〜 50 H mでは、 100〜20000j/m2程度である。 Examples of radiation used for exposure include low-pressure mercury lamp, high-pressure mercury lamp, and metal harassment. UV lamps such as id lamp, g spring stenonoichi, h spring stenonoichi, i spring stenonoichi, gh spring stenono 1 and ghi spring stepper. The amount of exposure is appropriately selected depending on the light source used, the resin film thickness, etc. For example, in the case of UV irradiation from a high-pressure mercury lamp, the resin film thickness is about 100 to 20000 j / m 2 at a resin film thickness of 50 to 50 Hm. It is.
[0059] 露光後は、発生した酸によるフエノール樹脂 (A)と架橋剤(C)の硬化反応を促進さ せるために上記 PEB処理を行う。 PEB条件は樹脂組成物の配合量や使用膜厚等に よって異なる力 通常、 70〜; 150°C、好ましくは 80〜; 120°Cで、;!〜 60分程度である 。その後、アルカリ性現像液により現像して、未露光部を溶解、除去することによって 所望のパターンを形成する。この場合の現像方法としては、シャワー現像法、スプレ 一現像法、浸漬現像法、パドル現像法等を挙げることができる。現像条件としては通 常、 20〜40°Cで;!〜 10分程度である。  [0059] After the exposure, the PEB treatment is performed in order to accelerate the curing reaction of the phenol resin (A) and the crosslinking agent (C) by the generated acid. The PEB condition varies depending on the blending amount of the resin composition, the used film thickness, and the like. Usually, 70 to 150 ° C, preferably 80 to 120 ° C; Thereafter, development is performed with an alkaline developer, and a desired pattern is formed by dissolving and removing unexposed portions. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method. The development conditions are usually 20 to 40 ° C; about! To 10 minutes.
[0060] 前記アルカリ性現像液としては、例えば、水酸化ナトリウム、水酸化カリウム、アンモ ユア水、テトラメチルアンモニゥムヒドロキシド、コリン等のアルカリ性化合物を濃度が 1 〜; 10重量%程度になるように水に溶解したアルカリ性水溶液を挙げることができる。 また、前記アルカリ性水溶液には、例えば、メタノール、エタノール等の水溶性の有 機溶剤や界面活性剤等を適量添加することもできる。尚、アルカリ性現像液で現像し た後に水で洗浄し、乾燥させる。  [0060] Examples of the alkaline developer include alkaline compounds such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide, and choline so that the concentration is about 1 to 10% by weight. An alkaline aqueous solution dissolved in water can be mentioned. In addition, an appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution. After developing with an alkaline developer, it is washed with water and dried.
[0061] 更に、現像後に絶縁膜としての特性を十分に発現させるために、加熱処理を行うこ とによって十分に硬化させることができる。このような硬化条件は特に制限されるもの ではないが、硬化膜の用途に応じて、 50〜250°Cの温度で、 30分〜 10時間程度加 熱し、組成物を硬化させることができる。また、硬化を十分に進行させたり、得られた ノ ターン形状の変形を防止するために二段階で加熱することもでき、例えば、第一段 階では、 50〜120°Cの温度で、 5分〜 2時間程度加熱し、更に 80〜250°Cの温度で 、 10分〜 10時間程度加熱して硬化させることもできる。このような硬化条件であれば 、加熱設備として一般的なオーブンや、赤外線炉等を使用することができる。  [0061] Furthermore, in order to sufficiently develop the characteristics as an insulating film after development, the film can be sufficiently cured by heat treatment. Such curing conditions are not particularly limited, but the composition can be cured by heating at a temperature of 50 to 250 ° C. for about 30 minutes to 10 hours depending on the use of the cured film. It can also be heated in two stages in order to allow the curing to proceed sufficiently and to prevent deformation of the resulting pattern. For example, in the first stage, the temperature is 50 to 120 ° C. It can also be cured by heating for about 2 minutes to about 2 hours and further for about 10 minutes to 10 hours at a temperature of 80 to 250 ° C. Under such curing conditions, a general oven, an infrared furnace, or the like can be used as a heating facility.
[0062] 本発明の絶縁膜形成用感光性樹脂組成物を用いれば、図 1及び図 2に示すような 半導体素子(回路付基板)等の電子部品を形成することができる。即ち、基板 1上に 金属パッド 2をパターン状に形成した後、上記樹脂組成物を用いて硬化絶縁膜 3を ノ ターン状に形成し、次いで、金属配線 4をパターン状に形成すると、図 1に示すよう な回路付基板を得ることができる。また、更にこの上に上記樹脂組成物を用いて硬化 絶縁膜 5を形成すると、図 2に示すような回路付基板を得ることができる。 [0062] By using the photosensitive resin composition for forming an insulating film of the present invention, an electronic component such as a semiconductor element (substrate with circuit) as shown in FIGS. 1 and 2 can be formed. That is, after the metal pad 2 is formed in a pattern on the substrate 1, the cured insulating film 3 is formed using the resin composition. If the wiring is formed in a pattern and then the metal wiring 4 is formed in a pattern, a circuit board as shown in FIG. 1 can be obtained. Further, when a cured insulating film 5 is formed thereon using the resin composition, a circuit board as shown in FIG. 2 can be obtained.
実施例  Example
[0063] 以下、実施例を挙げて、本発明を更に具体的に説明する。但し、本発明は、これら の実施例に何ら制約されるものではない。  [0063] Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.
[0064] [1]絶縁膜形成用感光性樹脂組成物の調製 [0064] [1] Preparation of photosensitive resin composition for insulating film formation
実施例 1  Example 1
表 1に示すとおり、 [A]フエノール樹脂 (A— 1) 100重量部、 [B]感放射線性酸発 生剤(B— 1) 1. 0重量部、 [C]架橋剤(C 4) 25重量部、 [E]密着助剤(E— 1) 2. 5 重量部、及び [G]界面活性剤(G— 1) 0. 2重量部を [F]溶剤(F— 1) 145重量部に 溶解することにより絶縁膜形成用感光性樹脂組成物を調製した。  As shown in Table 1, [A] Phenolic resin (A-1) 100 parts by weight, [B] Radiation sensitive acid generator (B-1) 1.0 part by weight, [C] Crosslinker (C4) 25 parts by weight, [E] adhesion aid (E-1) 2.5 parts by weight, and [G] surfactant (G-1) 0.2 parts by weight [F] solvent (F-1) 145 parts by weight The photosensitive resin composition for insulating film formation was prepared by melt | dissolving in a part.
[0065] 実施例 2〜5及び比較例;!〜 2 [0065] Examples 2 to 5 and comparative examples;! To 2
実施例 1と同様にして、表 1に示すとおり、 [A]フエノール樹脂、 [B]感放射線性酸 発生剤、 [C]架橋剤、 [D]架橋ポリマー粒子、 [E]密着助剤及び [G]界面活性剤を [ F]溶剤に溶解することにより各絶縁膜形成用感光性樹脂組成物を調製した。  In the same manner as in Example 1, as shown in Table 1, [A] phenol resin, [B] radiation sensitive acid generator, [C] crosslinker, [D] crosslink polymer particles, [E] adhesion aid and Each photosensitive resin composition for forming an insulating film was prepared by dissolving [G] surfactant in [F] solvent.
[0066] [表 1] [0066] [Table 1]
US <AHV7〜 US <AHV7 ~
Figure imgf000023_0001
table
Figure imgf000023_0001
Figure imgf000023_0002
Figure imgf000023_0002
A— 1 : p ヒドロキシスチレン/スチレン/ビュル安息香酸 = 18/80/2 (モル比) からなる共重合体、ポリスチレン換算重量平均分子量 (Mw) =10, 000 A—1: Copolymer composed of p-hydroxystyrene / styrene / bulubenzoic acid = 18/80/2 (molar ratio), polystyrene equivalent weight average molecular weight (Mw) = 10,000
A- 2: p ヒドロキシスチレン/スチレン = 80/20 (モル比)からなる共重合体、 M w=10, 000  A-2: p Hydroxystyrene / Styrene = 80/20 (molar ratio) copolymer, M w = 10,000
A— 3:ポリヒドロキシスチレン、 Mw=10, 000  A—3: Polyhydroxystyrene, Mw = 10,000
A— 4: p キシリレングリコール縮合フエノール樹脂〔三井化学製、商品名「XLC— 3LJ]  A— 4: p Xylylene glycol condensed phenol resin [Mitsui Chemicals, trade name “XLC-3LJ]
A— 5: m タレゾール /p タレゾール = 60/40 (モル比)からなるクレゾ一ルノボ ラック樹脂、 Mw=6, 500  A— 5: m talesol / p talesol = 60/40 (molar ratio) Cresolol novolac resin, Mw = 6, 500
く [B]酸発生剤〉 [B] Acid generator>
〔酸発生剤 (B)〕  (Acid generator (B))
B— 1:2— (p メトキシスチリル)一 4, 6—ビス(トリクロロメチル) 1, 3, 5—トリア  B— 1: 2— (p-methoxystyryl) -1,4,6-bis (trichloromethyl) 1, 3,5-tria
B-2:2-[4-[2-{4, 6 ビス(トリクロロメチル)ー1, 3, 5 トリアジンー2 ィ ノレ }ビュル〕フエノキシ]エタノール B-2: 2- [4- [2- {4, 6 Bis (trichloromethyl) -1,3,5 Triazine-2-amino} bule] phenoxy] ethanol
〔他の酸発生剤 (b)〕  [Other acid generators (b)]
b-l:2-(l, 3 ベンゾジォキソールー 5 ィル) 4, 6 ビス(トリクロロメチル) 1, 3, 5—トリァジン  b-l: 2- (l, 3 Benzodioxol-5 yl) 4, 6 Bis (trichloromethyl) 1, 3, 5-triazine
b— 2: 1—(4, 7 ジブトキシー 1 ナフタレニノレ)テトラヒドロチォフエニゥムトリフノレ ォロメタンスルホナート  b— 2: 1— (4, 7 Dibutoxy 1 naphthalenol) tetrahydrothiophene trifanolol methanesulfonate
く [C]架橋剤〉 [C] Crosslinking agent>
C-1:ノポラック型エポキシ樹脂〔ジャパンエポキシレジン (株)製、商品名「EP— 1 52」〕  C-1: Nopolac-type epoxy resin (made by Japan Epoxy Resin Co., Ltd., trade name “EP-1 52”)
C 2:ビスフエノール A型エポキシ樹脂〔ジャパンエポキシレジン (株)製、商品名「 ェピコート 828」〕  C 2: Bisphenol A type epoxy resin (made by Japan Epoxy Resin Co., Ltd., trade name “Epicoat 828”)
C 3:トリメチロールプロパンポリグリシジルエーテル〔共栄社化学製、商品名「ェポ ライト 100MF」〕  C 3: Trimethylolpropane polyglycidyl ether (Kyoeisha Chemical Co., Ltd., trade name “Epolite 100MF”)
C— 4:へキサメトキシメチルメラミン〔(株)三和ケミカル製、商品名「二力ラック MW — 390」〕 C—4: Hexamethoxymethyl melamine [manufactured by Sanwa Chemical Co., Ltd. — 390 ”)
[0068] く [D]架橋ポリマー粒子〉 [0068] [D] Crosslinked Polymer Particles>
D— 1:ブタジエン/アクリロニトリル/ヒドロキシブチルメタタリレート/メタクリル酸 /ジビュルベンゼン = 64/20/8/6/2 (重量%)、平均粒径 = 65nm、 Tg=— 3 8。C ニルベンゼン = 48/20/24/6/2 (重量%)、平均粒径 = 65nm、 Tg=— 9°C く [E]密着助剤〉  D—1: butadiene / acrylonitrile / hydroxybutyl methacrylate / methacrylic acid / dibutylbenzene = 64/20/8/6/2 (wt%), average particle size = 65 nm, Tg = —38. C Nylbenzene = 48/20/24/6/2 (wt%), average particle size = 65nm, Tg = —9 ° C [E] Adhesion aid>
E- 1 : γ—グリシドキシプロピルトリメトキシシラン〔チッソ (株)製、商品名「S510」〕 E— 2 : 1 , 3, 5— N—トリス(トリメトキシシリルプロピル)イソシァヌレート〔GE東芝シリ コーン (株)製、商品名「Y— 11597」〕  E-1: γ-Glycidoxypropyltrimethoxysilane (product name “S510”, manufactured by Chisso Corporation) E—2: 1, 3, 5—N-tris (trimethoxysilylpropyl) isocyanurate [GE Toshiba Siri (Made by Corn Co., Ltd., trade name “Y-11597”)
く [F]溶剤〉  [F] Solvent>
F— 1 :乳酸ェチル  F— 1: Ethyl lactate
F— 2 : 2—へプタノン  F—2: 2-Heptanone
く [G]界面活性剤〉  [G] Surfactant>
G- 1 :レべリング剤 ·界面活性剤〔ネオス (株)製、商品名「FTX— 218」〕 G— 2 :レべリング剤 ·界面活性剤〔東レ 'ダウコーユング (株)製、商品名「SH8400」 G-1: Leveling agent · Surfactant (Neos Co., Ltd., trade name "FTX-218") G-2: Leveling agent · Surfactant (Toray 'Dow Coung Co., Ltd., trade name) "SH8400"
] ]
[0069] [2]絶縁膜形成用感光性樹脂組成物の評価  [0069] [2] Evaluation of photosensitive resin composition for insulating film formation
上記実施例 1〜 5及び比較例;!〜 2の各絶縁膜形成用感光性樹脂組成物の特性を 、下記の方法に従って評価した。その結果を表 2に示す。  The characteristics of the respective photosensitive resin compositions for forming an insulating film in Examples 1 to 5 and Comparative Examples;! To 2 were evaluated according to the following methods. The results are shown in Table 2.
(1)残膜率  (1) Residual film rate
6インチのシリコンウェハーに絶縁膜形成用感光性樹脂組成物をスピンコートし、ホ ットプレートを用いて 110°Cで 3分間加熱し、 20 μ m厚の均一な樹脂塗膜を作製した 。その後、ァライナー(Karl Suss社製、「MA— 100」)を用い、パターンマスクを介 して高圧水銀灯からの紫外線を波長 420nmにおける露光量が 500mj/cm2となる ように露光した。次いで、ホットプレートで 110°C、 3分間加熱(PEB)し、 2. 38重量 %テトラメチルアンモニゥムハイドロキサイド水溶液を用いて 23°Cで 120秒間、浸漬 現像した。そして、現像前後の膜厚から残膜率を算出した。 A 6-inch silicon wafer was spin-coated with a photosensitive resin composition for forming an insulating film and heated at 110 ° C. for 3 minutes using a hot plate to produce a uniform resin film having a thickness of 20 μm. Then, using an aligner (manufactured by Karl Suss, “MA-100”), UV light from a high-pressure mercury lamp was exposed through a pattern mask so that the exposure amount at a wavelength of 420 nm was 500 mj / cm 2 . Next, heat it at 110 ° C for 3 minutes (PEB) on a hot plate, and soak it for 2 seconds at 23 ° C using 2.38 wt% tetramethylammonium hydroxide aqueous solution. Developed. The remaining film ratio was calculated from the film thickness before and after development.
[0070] (2)解像性 [0070] (2) Resolution
6インチのシリコンウェハーに絶縁膜形成用感光性樹脂組成物をスピンコートし、ホ ットプレートを用いて 110°Cで 3分間加熱し、 20 μ m厚の均一な樹脂塗膜を作製した 。その後、ァライナー(Karl Suss社製、「MA— 100」)を用い、パターンマスクを介 して高圧水銀灯からの紫外線を波長 420nmにおける露光量が 500mj/cm2となる ように露光した。次いで、ホットプレートで 110°C、 3分間加熱(PEB)し、 2. 38重量 %テトラメチルアンモニゥムハイドロキサイド水溶液を用いて 23°Cで 120秒間、浸漬 現像した。そして、得られたパターンの最小寸法を解像度とした。 A 6-inch silicon wafer was spin-coated with a photosensitive resin composition for forming an insulating film and heated at 110 ° C. for 3 minutes using a hot plate to produce a uniform resin film having a thickness of 20 μm. Then, using an aligner (manufactured by Karl Suss, “MA-100”), UV light from a high-pressure mercury lamp was exposed through a pattern mask so that the exposure amount at a wavelength of 420 nm was 500 mj / cm 2 . Next, it was heated (PEB) at 110 ° C. for 3 minutes on a hot plate, and then developed by immersion for 2 seconds at 23 ° C. using a 2.38 wt% tetramethylammonium hydroxide aqueous solution. And the minimum dimension of the obtained pattern was made into the resolution.
[0071] (3)密着性 [0071] (3) Adhesion
SiOをスパッタしたシリコンウェハーに絶縁膜形成用感光性樹脂組成物を塗布し、 Applying a photosensitive resin composition for insulating film formation to a silicon wafer sputtered with SiO,
2 2
ホットプレートを用いて 110°Cで 3分間加熱し、 10 m厚の均一な樹脂塗膜を作製し た。その後、対流式オーブンを用いて 190°Cで 1時間加熱して樹脂塗膜を硬化させ て硬化膜を得た。次いで、この硬化膜をプレッシャータッカー試験装置〔タバイエスぺ ック(株)社製、「EHS— 221MD」〕で、温度 121°C、湿度 100%、圧力 2· 1気圧の 条件下で 168時間処理した。そして、試験前後での密着性を JIS K 5400に準拠し てクロスカット試験(碁盤目テープ法)を行い、評価した。  A 10 m thick uniform resin film was prepared by heating at 110 ° C for 3 minutes using a hot plate. Thereafter, the resin coating film was cured by heating at 190 ° C. for 1 hour using a convection oven to obtain a cured film. Next, this cured film was treated with a pressure tacker tester (“EHS-221MD”, manufactured by Tabyes Pec Co., Ltd.) for 168 hours under conditions of a temperature of 121 ° C, a humidity of 100%, and a pressure of 2.1 atm. did. Then, the cross-cut test (cross cut tape method) was evaluated in accordance with JIS K 5400 before and after the test.
[0072] (4)熱衝撃性  [0072] (4) Thermal shock resistance
図 3及び図 4に示すような基板 6上にパターン状の銅箔 7を有している熱衝撃性評 価用の基材 8に絶縁膜形成用感光性樹脂組成物を塗布し、ホットプレートを用いて 1 10°Cで 3分間加熱し、銅箔 7上での厚さが 10 mである樹脂塗膜を有する基材を作 製した。その後、対流式オーブンを用いて 190°Cで 1時間加熱して樹脂塗膜を硬化 させて硬化膜を得た。この基材を冷熱衝撃試験器〔タノ イエスペック (株)社製、「TS A—40L」〕で— 65°C/30分〜 150°C/30分を 1サイクルとして耐性試験を行った。 そして、硬化膜にクラック等の欠陥が発生するまでのサイクル数(100サイクル毎)を 測定した。  3 and 4 are coated with a photosensitive resin composition for forming an insulating film on a base material 8 for thermal shock evaluation having a patterned copper foil 7 on a substrate 6 and hot plate. 1 was heated at 10 ° C. for 3 minutes to produce a base material having a resin coating film having a thickness of 10 m on the copper foil 7. Thereafter, the resin coating film was cured by heating at 190 ° C for 1 hour using a convection oven to obtain a cured film. This substrate was subjected to a resistance test using a thermal shock tester (Tano Yspec Co., Ltd., “TS A-40L”) at a cycle of −65 ° C./30 minutes to 150 ° C./30 minutes. Then, the number of cycles (every 100 cycles) until a defect such as a crack occurred in the cured film was measured.
[0073] (5)絶縁性  [0073] (5) Insulation
図 5に示すような基板 9上にパターン状の銅箔 10を有している絶縁性評価用の基 材 11に絶縁膜形成用感光性樹脂組成物を塗布し、ホットプレートを用いて 110°Cで 3分間加熱し、銅箔 10上での厚さが 10 mである樹脂塗膜を有する基材を作製した 。その後、対流式オーブンを用いて 190°Cで 1時間加熱して樹脂塗膜を硬化させて 硬化膜を得た。この基材をマイグレーション評価システム〔タバイエスペック (株)社製 、「AEI, EHS— 221MD」〕に投入し、温度 121°C、湿度 85%、圧力 1. 2気圧、印 加電圧 5Vの条件で 200時間処理した。その後、試験基材の抵抗値(Ω )を測定し、 絶縁性を評価した。 Insulation evaluation base having a patterned copper foil 10 on a substrate 9 as shown in FIG. A base material having a resin coating film having a thickness of 10 m on copper foil 10 by applying a photosensitive resin composition for forming an insulating film to material 11 and heating at 110 ° C. for 3 minutes using a hot plate Was made. Thereafter, the resin coating film was cured by heating at 190 ° C. for 1 hour using a convection oven to obtain a cured film. This base material was put into a migration evaluation system (“AEI, EHS—221MD” manufactured by Tabai Espec Co., Ltd.) under the conditions of temperature 121 ° C, humidity 85%, pressure 1.2 atm, and applied voltage 5V. Processed for 200 hours. Thereafter, the resistance value (Ω) of the test substrate was measured to evaluate the insulation.
[表 2] [Table 2]
表 2  Table 2
Figure imgf000027_0001
Figure imgf000027_0001
尚、絶縁膜形成用感光性樹脂組成物は、前記 (A)フエノール性水酸基を有するァ ルカリ可溶性樹脂と、(B)前記一般式(1)で表される前記化合物と、前記 (C)架橋剤 と、を含有するあのとすることあでさる。  Note that the photosensitive resin composition for forming an insulating film includes (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) the compound represented by the general formula (1), and (C) a crosslinked bridge. And that contains the agent.

Claims

請求の範囲 [1] (A)フエノール性水酸基を有するアルカリ可溶性樹脂と、(B)下記一般式(1)で表 される化合物と、(C)架橋剤と、(E)密着助剤と、(F)溶剤と、を含有することを特徴と する絶縁膜形成用感光性樹脂組成物。 [化 1コ Claims [1] (A) An alkali-soluble resin having a phenolic hydroxyl group, (B) a compound represented by the following general formula (1), (C) a crosslinking agent, (E) an adhesion aid, (F) A photosensitive resin composition for forming an insulating film, comprising a solvent. [Chemical 1
(1 )
Figure imgf000028_0001
(1)
Figure imgf000028_0001
〔式(1)において、 Rは各々独立に水素原子、炭素数 1〜6のアルキル基、 Ι^ΟΗ 、— R2OR3又は— R4OR5OR6を示し、 nは 1又は 2であり、 Xは各々独立にハロゲン 原子を示す。尚、 R1はメチレン基又は炭素数 2〜6のアルキレン基、 R2はメチレン基 又は炭素数 2〜4のアルキレン基、 R3は炭素数 1〜6のアルキル基、 R4はメチレン基 又は炭素数 2〜4のアルキレン基、 R5はメチレン基又は炭素数 2〜6のアルキレン基、 R6は炭素数 1〜6のアルキル基を示す。〕 [In the formula (1), each R independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, Ι ^ ΟΗ, —R 2 OR 3 or —R 4 OR 5 OR 6 , and n is 1 or 2 Each X independently represents a halogen atom. R 1 is a methylene group or an alkylene group having 2 to 6 carbon atoms, R 2 is a methylene group or an alkylene group having 2 to 4 carbon atoms, R 3 is an alkyl group having 1 to 6 carbon atoms, R 4 is a methylene group or An alkylene group having 2 to 4 carbon atoms, R 5 represents a methylene group or an alkylene group having 2 to 6 carbon atoms, and R 6 represents an alkyl group having 1 to 6 carbon atoms. ]
[2] 上記(C)架橋剤力 分子中に 2つ以上のアルキルエーテル化されたアミノ基を有す る化合物を含む請求項 1に記載の絶縁膜形成用感光性樹脂組成物。  [2] The photosensitive resin composition for forming an insulating film according to [1], wherein the compound (C) includes a compound having two or more alkyl etherified amino groups in the molecule.
[3] 上記(C)架橋剤が、ォキシラン環含有化合物を含む請求項 1又は 2に記載の絶縁 膜形成用感光性樹脂組成物。  [3] The photosensitive resin composition for forming an insulating film according to [1] or [2], wherein the (C) crosslinking agent comprises an oxosilane ring-containing compound.
[4] 更に、(D)架橋ポリマー粒子を含有する請求項 1乃至 3のいずれかに記載の絶縁 膜形成用感光性樹脂組成物。  [4] The photosensitive resin composition for forming an insulating film according to any one of claims 1 to 3, further comprising (D) crosslinked polymer particles.
[5] 請求項 1乃至 4のいずれかに記載の絶縁膜形成用感光性樹脂組成物が硬化され てなることを特徴とする硬化膜。  [5] A cured film obtained by curing the photosensitive resin composition for forming an insulating film according to any one of claims 1 to 4.
[6] 請求項 5に記載の硬化膜を備えることを特徴とする電子部品。  [6] An electronic component comprising the cured film according to [5].
[7] 上記硬化膜が、層間絶縁膜又は平坦化膜である請求項 6に記載の電子部品。 7. The electronic component according to claim 6, wherein the cured film is an interlayer insulating film or a planarizing film.
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