WO2008067957A3 - Anordnung zur elektro-optischen ansteuerung und schnellen modulation von thz-sendern und thz-messsystemen - Google Patents

Anordnung zur elektro-optischen ansteuerung und schnellen modulation von thz-sendern und thz-messsystemen Download PDF

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Publication number
WO2008067957A3
WO2008067957A3 PCT/EP2007/010411 EP2007010411W WO2008067957A3 WO 2008067957 A3 WO2008067957 A3 WO 2008067957A3 EP 2007010411 W EP2007010411 W EP 2007010411W WO 2008067957 A3 WO2008067957 A3 WO 2008067957A3
Authority
WO
WIPO (PCT)
Prior art keywords
thz
electro
measuring systems
transmitters
optical control
Prior art date
Application number
PCT/EP2007/010411
Other languages
English (en)
French (fr)
Other versions
WO2008067957A2 (de
Inventor
Bernd Sartorius
Michael Feiginov
Cezary Sydlo
Original Assignee
Fraunhofer Ges Forschung
Tech Hochschule Darmstadt
Bernd Sartorius
Michael Feiginov
Cezary Sydlo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung, Tech Hochschule Darmstadt, Bernd Sartorius, Michael Feiginov, Cezary Sydlo filed Critical Fraunhofer Ges Forschung
Priority to US12/517,732 priority Critical patent/US8064740B2/en
Publication of WO2008067957A2 publication Critical patent/WO2008067957A2/de
Publication of WO2008067957A3 publication Critical patent/WO2008067957A3/de

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H04B10/5053—Laser transmitters using external modulation using a parallel, i.e. shunt, combination of modulators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H04B10/5051—Laser transmitters using external modulation using a series, i.e. cascade, combination of modulators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H01S5/0623—Modulation at ultra-high frequencies using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Abstract

Es soll eine preisgünstige und kompakte Anordnung zur elektro-optischen Ansteuerung und schnellen Modulation von THz-Sendern und THz- Messsystemen angegeben werden, die stabil ist, ohne mechanische Bewegungen auskommt und mit rein elektrischer Ansteuerung bei geringem Leistungsverbrauch und mit hohem Geschwindigkeitspotential für die Phasenmodulation arbeitet. Hierzu werden die dem Stand der Technik nach bekannten Komponenten: zwei Laser, Strahlteiler, Koppler und die mechanisch bewegte Verzögerungsleitung ersetzt durch einen kompakten monolithisch oder hybrid integrierten Chip (10), einem so genannten optischen Master Chip, ohne bewegliche Teile, aufweisend mindestens die beiden Laser (1, 2); Strahlteiler (S3.1, S3.2), Koppler (K3.1, K3.2) und einen Phasenmodulator (4.1) für eine der Laserwellen, so dass die beiden erzeugten Schwebungssignale zu jeweils unterschiedlichen Chip-Ausgängen (6, 7) für die getrennte Ansteuerung von THz-Sender und Lokal-Oszillator führen.
PCT/EP2007/010411 2006-12-07 2007-11-30 Anordnung zur elektro-optischen ansteuerung und schnellen modulation von thz-sendern und thz-messsystemen WO2008067957A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/517,732 US8064740B2 (en) 2006-12-07 2007-11-30 Arrangement for the electro-optical control and fast modulation of THz transmitters and THz measuring systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006058395.7 2006-12-07
DE102006058395A DE102006058395B4 (de) 2006-12-07 2006-12-07 Anordnung zur elektrischen Ansteuerung und schnellen Modulation von THz-Sendern und THz-Messsystemen

Publications (2)

Publication Number Publication Date
WO2008067957A2 WO2008067957A2 (de) 2008-06-12
WO2008067957A3 true WO2008067957A3 (de) 2008-10-30

Family

ID=39345507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/010411 WO2008067957A2 (de) 2006-12-07 2007-11-30 Anordnung zur elektro-optischen ansteuerung und schnellen modulation von thz-sendern und thz-messsystemen

Country Status (3)

Country Link
US (1) US8064740B2 (de)
DE (1) DE102006058395B4 (de)
WO (1) WO2008067957A2 (de)

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US7936453B2 (en) * 2008-04-04 2011-05-03 Emcore Corporation Terahertz frequency domain spectrometer with integrated dual laser module
GB0807176D0 (en) * 2008-04-18 2008-05-21 Univ Leeds Signal generation
US8604433B2 (en) 2008-05-19 2013-12-10 Emcore Corporation Terahertz frequency domain spectrometer with frequency shifting of source laser beam
US9029775B2 (en) 2008-05-19 2015-05-12 Joseph R. Demers Terahertz frequency domain spectrometer with phase modulation of source laser beam
US7781736B2 (en) * 2008-05-19 2010-08-24 Emcore Corporation Terahertz frequency domain spectrometer with controllable phase shift
DE102010019134B4 (de) 2010-04-30 2019-08-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. THz-Messsystem und Sensoranordnungen sowie deren Verwendung
DE102010049658A1 (de) * 2010-10-25 2012-04-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Effizienz-verbessertes fasergekoppeltes Terahertzsystem
EP2509173B1 (de) 2011-04-06 2017-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Terahertz-System
US8463087B2 (en) 2011-04-06 2013-06-11 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Beat signal generating device for use in a Terahertz system, Terahertz system and use of a beat signal generating device
EP2693630A1 (de) * 2012-07-31 2014-02-05 QIAGEN Lake Constance GmbH Verfahren zum Bereitstellen modulierter Anregungssignale
US9400214B1 (en) 2013-03-15 2016-07-26 Joseph R. Demers Terahertz frequency domain spectrometer with a single photoconductive element for terahertz signal generation and detection
US9103715B1 (en) 2013-03-15 2015-08-11 Joseph R. Demers Terahertz spectrometer phase modulator control using second harmonic nulling
US9086374B1 (en) 2014-04-25 2015-07-21 Joseph R. Demers Terahertz spectrometer with phase modulation and method
US9404853B1 (en) 2014-04-25 2016-08-02 Joseph R. Demers Terahertz spectrometer with phase modulation
US9239264B1 (en) 2014-09-18 2016-01-19 Joseph R. Demers Transceiver method and apparatus having phase modulation and common mode phase drift rejection
US9429473B2 (en) 2014-10-16 2016-08-30 Joseph R. Demers Terahertz spectrometer and method for reducing photomixing interference pattern
EP3144664B1 (de) 2015-09-15 2021-10-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. System und verfahren zur bestimmung der eigenschaften eines objekts oder einer probe
US10082627B2 (en) * 2016-11-15 2018-09-25 Electronics And Telecommunications Research Institute Apparatus and method for providing terahertz waves
EP3821505A4 (de) * 2018-07-13 2022-07-06 The Government of the United States of America as represented by the Secretary of the Navy Hochstabile halbleiterlaser und sensoren für iii-v- und silicium-photonische integrierte schaltungen
CN110160573B (zh) * 2019-07-08 2022-03-25 山东省科学院激光研究所 艾赫兹超快调制脉冲扫描激光器及分布式光纤传感系统
CN114122727B (zh) * 2021-12-03 2023-03-21 电子科技大学长三角研究院(湖州) 一种利用反相干涉原理的太赫兹幅度调制器

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US6545785B1 (en) * 1999-04-01 2003-04-08 Trw Inc. Optical communication system with phase modulation
US20050259908A1 (en) * 2002-06-21 2005-11-24 Silvano Donati Millimeter wave transmitter using optical heterodyning
WO2006123163A1 (en) * 2005-05-18 2006-11-23 The Centre For Integrated Photonics Limited Method to generate and detect terahertz radiation

Also Published As

Publication number Publication date
DE102006058395B4 (de) 2012-05-16
US20100080505A1 (en) 2010-04-01
US8064740B2 (en) 2011-11-22
DE102006058395A1 (de) 2008-06-19
WO2008067957A2 (de) 2008-06-12

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