WO2008038588A1

WO2008038588A1 - Method for manufacturing organic material apparatus

Info

Publication number: WO2008038588A1
Application number: PCT/JP2007/068393
Authority: WO
Inventors: Naotoshi Suganuma; Noriyuki Shimoji; Yoshiaki Oku
Original assignee: Rohm Co., Ltd.
Priority date: 2006-09-28
Filing date: 2007-09-21
Publication date: 2008-04-03
Also published as: JP2008085200A; JP4293467B2; TW200826330A

Abstract

This invention provides a method for manufacturing an organic material apparatus, comprising a step of forming a sacrifice layer formed of an inorganic material on a first material layer formed of an organic material provided on a substrate, a step of forming a resist in the area on the substrate including the top of the sacrifice layer, a selective exposure step of for selectively exposing the resist to form a predetermined pattern, a development step of dissolving, with a developing solution comprising an aqueous solution which can dissolve the sacrifice layer, the resist part exposed in the selective exposure step and the sacrifice layer provided just under the resist part, and a step of forming the second material layer on the substrate after the development step, and a lift-off step of dissolving, with a developing solution comprising an aqueous solution which can dissolve the sacrifice layer, the resist and the sacrifice layer just under the resist to lift off the second material layer on the resist to pattern the second material layer.

Description

Specification

Manufacturing method of organic material device

Technical field

The present invention relates to a method for manufacturing an organic material device having a pattern of another material layer on an organic material layer.

Background art

An organic transistor using an organic semiconductor material for a semiconductor active layer has been proposed! /. One structure of the organic transistor is a so-called top contact type. A top contact type organic transistor is manufactured by forming source and drain electrodes on an organic semiconductor layer. More specifically, for example, a gate electrode is formed on a substrate such as a glass substrate, a plastic substrate, or a silicon substrate, and a gate insulating film is formed so as to cover the gate electrode. Further, an organic semiconductor layer is deposited on the gate insulating film, and a metal layer as a source / drain electrode is formed on the organic semiconductor layer.

[0003] A vacuum deposition method is generally applied to the formation of the metal layer. More specifically, a deposition source is disposed in the vacuum chamber, and a substrate on which the gate insulating film and the organic semiconductor layer are formed is disposed so as to face the deposition source. Further, a shadow mask is disposed between the substrate and the evaporation source. In the shadow mask, a fine opening corresponding to the pattern of the metal layer (source / drain electrode pattern) to be formed on the organic semiconductor layer is formed. The metal material molecules that evaporate in the vapor deposition source and fly toward the organic semiconductor layer reach the surface of the organic semiconductor layer through the opening of the shadow mask and adhere to form a pattern of the metal layer.

Patent Document 1: JP 2005-038638 Koyuki

Disclosure of the invention

Problems to be solved by the invention

[0004] With the above-described method using a shadow force and a shadow mask, an extremely fine metal layer pattern cannot be formed, and a pattern on the order of several meters is the limit of miniaturization. Therefore, it is not necessarily a suitable method for miniaturization and high integration of elements. Therefore, it has been proposed to apply ink jet patterning as a method for miniaturizing the element. However, as a metal material that can be ink for ink jet patterning, for example, it is necessary to be nano fine particles. For other materials, the line edge irregularities are large and the pattern accuracy is poor.

[0005] On the other hand, it may be possible to apply a photolithographic process to the patterning of a metal film to reduce the size of the pattern. However, the photoresist used in the photolithography process is generally diluted with an organic solvent and applied onto the substrate. However, if a photoresist diluted with an organic solvent is applied on the organic semiconductor layer, the organic solvent may erode the organic semiconductor layer and impair its electrical characteristics.

[0006] The above-described problem is not limited to the case of forming a metal layer, but after forming an organic material layer on a substrate and patterning another material layer (for example, an organic material layer, an insulating film, etc.) Is a common problem.

Accordingly, an object of the present invention is to provide a method for manufacturing an organic material device capable of forming a fine pattern of another material layer on the substrate while suppressing or preventing the influence on the organic material layer on the substrate. It is in.

Means for solving the problem

[0007] The organic material device manufacturing method of the present invention includes a step of forming a sacrificial layer made of an inorganic material on a first material layer having an organic material force formed on a substrate, and the substrate including the sacrificial layer. A step of forming a resist in the upper region, a selective exposure step of selectively exposing the resist in a predetermined pattern, and a developer comprising an aqueous solution capable of dissolving the sacrificial layer.

A development step for dissolving the resist portion exposed in the selective exposure step and the sacrificial layer immediately below the resist portion, and a step of forming a second material layer on the substrate after the development step. The second material layer on the resist is lifted off by dissolving the resist and the sacrificial layer directly below the developer with an aqueous solution capable of dissolving the sacrificial layer. A lift-off process for patterning.

[0008] According to this method, since the resist is formed (applied) in a state where the first material layer is protected by the sacrificial layer made of an inorganic material, the organic solvent force in the resist can be protected from the first material layer. In other words, the sacrificial layer can avoid contact between the first material layer and the resist. As a result, the first It is possible to form (pattern) the second material layer on the substrate while suppressing or preventing the influence on the material layer. In addition, since the second material layer can be patterned by photolithography, the substrate with the first material layer formed on the second material layer, which is significantly finer than the conventional technology using a shadow mask, is used. Can be formed on top. Of course, unlike the case of inkjet patterning, there are no strict restrictions on the materials used for the second material layer.

[0009] Developers in the developing step and the lift-off step may be the same type or different types. The second material layer may be formed by, for example, a vapor deposition method. The formation pattern of the second material layer may be a pattern having a contact portion with respect to the first material layer, or may be a pattern having no contact portion with the first material layer.

The organic material device manufacturing method exposes the unexposed portion of the resist remaining on the substrate after the development step, and the resist is chemically soluble in a developer used in the lift-off step. It is preferable to further include an all resist exposure process to be changed, and after this all resist exposure process, a process of forming the second material layer is performed.

[0010] According to this method, the resist in the unexposed portion remaining on the substrate after the development process is exposed, and this resist is chemically changed to a property soluble in the developer used in the lift-off process. An exposure process is performed. Therefore, in the lift-off process, all resists on the substrate can be surely dissolved, and unnecessary portions of the second material layer can be precisely lifted off together with the resist.

[0011] In addition, in the method for manufacturing the organic material device, it is preferable that the developer used in the developing process and the lift-off process is V and the deviation is an alkaline aqueous solution.

In general, the resist is designed to be soluble in an alkaline aqueous solution, and an alkaline developer is often used in the development process after exposure. Therefore, in the lift-off process

By using an alkaline aqueous solution and a material insoluble in the alkaline aqueous solution as the organic material layer, it is possible to increase the resist selection ratio with respect to the organic material layer, thereby enabling precise lift-off.

[0012] In the method for manufacturing the organic material device, the sacrificial layer is preferably a metal layer. Yes.

According to this method, a metal layer such as an aluminum layer is formed as the sacrificial layer. In general, metals such as aluminum are soluble in an alkaline aqueous solution. Therefore, for example, when an alkaline aqueous solution is used as the developer in the lift-off process, the sacrificial layer formed on the organic material layer can be easily dissolved and removed together with the resist.

[0013] In the method for manufacturing the organic material device, the first material layer is preferably an organic semiconductor material layer.

According to this method, it is possible to prevent the resist from coming into contact with the organic semiconductor material layer by the action of the sacrificial layer, so that the influence of the organic solvent in the resist on the organic semiconductor material layer can be suppressed or prevented. Thus, the second material layer having a fine pattern can be formed on the organic semiconductor material layer without impairing the electrical characteristics of the organic semiconductor material layer. As a result, an organic semiconductor device having excellent electrical characteristics can be realized.

[0014] As an example of an organic semiconductor device, an organic transistor using an organic semiconductor layer as a semiconductor active layer may emit light by causing recombination of electrons and holes in the organic semiconductor light emitting layer. Name the organic semiconductor light-emitting device that wakes up (organic electoluminescence (EL) device).

In the method for manufacturing the organic material device, the second material layer preferably includes a metal layer.

[0015] According to this method, the second material layer is formed to include a metal layer, for example, a metal electrode. Therefore, for example, a top contact type device in which an electrode is formed on an organic material layer such as an organic semiconductor material layer can be manufactured. In this case, since a metal film having a fine pattern can be formed on the substrate (for example, on the organic material layer) without impairing the electrical characteristics of the organic material layer, the device can be miniaturized and highly integrated.

[0016] In the method for manufacturing the organic material device, it is preferable that the second material layer includes an organic material layer of a different type from the organic material layer constituting the first material layer.

According to this method, the second material layer is formed so as to include an organic material layer of a different type from the organic material layer constituting the first material layer. More specifically, for example, the first material layer is It is made of P-type organic semiconductor material and the second material layer is made of N-type organic semiconductor material. As a result, both P-type and N-type organic semiconductor material layers can be formed on the substrate in a fine pattern. Therefore, for example, an organic transistor element of P channel type operation and an organic transistor element of N channel type operation can be formed in a fine pattern on a substrate, and these can be integrated on the substrate.

[0017] Further, in the method of manufacturing the organic material device, the first material layer preferably has a laminated structure of a plurality of organic material layers.

According to this method, since the first material layer is formed as a laminated structure of a plurality of organic material layers, for example, it can be suitably employed as a method for manufacturing an organic electoluminescence device.

[0018] In the method for manufacturing the organic material device, the second material layer preferably has a laminated structure of a plurality of organic material layers.

According to this method, since the second material layer is formed as a laminated structure of a plurality of organic material layers, for example, it can be suitably employed as a method for manufacturing an organic electoluminescence device. More specifically, for example, a plurality of micro organic luminescence elements can be arranged at high density on a substrate, and a high-definition display device can be realized.

Yes

[0019] The above-described or other objects, features, and effects of the present invention will become apparent from the following description of embodiments with reference to the accompanying drawings.

Brief Description of Drawings

FIG. 1 is a cross-sectional view schematically showing a configuration of an organic material device to which a method according to a first embodiment of the present invention is applied.

[FIG. 2] FIGS. 2A to 2G are schematic sectional views showing a method of manufacturing the organic transistor of FIG.

FIG. 3 is an illustrative cross-sectional view for explaining the configuration of an organic material device to which a method according to a second embodiment of the present invention is applied.

[FIG. 4] FIGS. 4A to 4F are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps. 5] FIGS. 5G to 5L are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps.

6] An illustrative cross-sectional view for explaining the configuration of an organic material device to which the method according to the third embodiment of the present invention is applied.

7] FIGS. 7A to 7E are schematic sectional views showing the manufacturing method of the RGB light emitting device of FIG. 6 in the order of steps.

8] FIGS. 8F to 8I are schematic sectional views showing the manufacturing method of the RGB light emitting device of FIG. 6 in the order of steps.

FIGS. 9J to 9M are schematic cross-sectional views showing the method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps.

[FIG. 10] FIGS. 10N to 10Q are schematic cross-sectional views showing the manufacturing method of the RGB light emitting device of FIG. 6 in the order of steps.

11] FIGS. 11R to 11U are schematic cross-sectional views showing the manufacturing method of the RGB light emitting device of FIG. 6 in the order of steps.

Sono 12] is a schematic cross-sectional view for explaining the structure of an organic material device to which a method according to a fourth embodiment of the present invention is applied.

13] FIGS. 13A to 13D are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 12 in the order of steps.

14] FIGS. 14E to 14H are schematic sectional views showing the method of manufacturing the organic transistor integrated circuit element of FIG. 12 in the order of steps.

FIGS. 15I to 15L are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 12 in the order of steps.

16] A schematic cross-sectional view for explaining a configuration of an organic material device to which the method according to the fifth embodiment of the present invention is applied.

17] FIGS. 17A to 17F are schematic sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps.

[FIG. 18] FIGS. 18G to 18M are schematic sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps. FIGS. 19N to 19S are schematic sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps.

FIG. 20 is a schematic cross-sectional view for explaining the configuration of an organic material device to which a method according to a sixth embodiment of the present invention is applied.

21A to 21F are schematic cross-sectional views showing a method of manufacturing the composite integrated device of FIG. 20 in the order of steps.

22G to 22K are schematic cross-sectional views showing the method of manufacturing the composite integrated device of FIG. 20 in the order of steps.

FIGS. 23L to 23P are schematic sectional views showing a method of manufacturing the composite integrated device of FIG. 20 in the order of steps.

[FIG. 24] FIGS. 24Q to 24S are schematic sectional views showing a method of manufacturing the composite integrated device of FIG. 20 in the order of steps.

Explanation of symbols

[0021] 1 ... Organic transistor, 4 ... Organic material layer, 5 ... Electrode, 6 ... Electrode, 8 ... Sacrificial layer, 9 ...

'Photoresist, 10 ··· Photomask, 11 ··· Substrate, 16Ρ ··· Electrode, 16Ν ··· Electrode, 17 ··· Electrode, 18 ···, vertical organic semiconductor layer, 19 ··· Ν Type organic semiconductor layer, 21 ... substrate, 24 ... organic layer, 29 ... organic transistor integrated circuit element, 30 "RGB light emitting element, 31 ... organic transistor integrated circuit element, 33 ... ... Board, 35 ... Organic transistor, 36 ... Board, 38 ... Composite integrated device, 39 ... Board

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 is a cross-sectional view schematically showing the configuration of an organic material device to which the method according to the first embodiment of the present invention is applied.

This organic material device is an organic transistor 1 having a basic structure as a FET (field effect transistor). The organic transistor 1 includes a gate electrode 2 which also serves as a substrate, a goot insulating film 3 stacked on the got electrode 2, an organic material layer 4 stacked on the gate insulating film 3, and an organic material layer 4 And a pair of electrodes 5 and 6 (source and drain electrodes) formed at a predetermined interval (for example, 10 m). That is, in this organic transistor 1, the electrodes 5 and 6 are arranged on the opposite side of the organic material layer 4 from the gate electrode 2. It has a so-called top contact type structure. For example, one of the pair of electrodes 5 and 6 is a carrier injection electrode 5 that injects a carrier (electrons or holes) into the organic material layer 4, and the other is a carrier lead that receives the carrier from the organic material layer 4. Electrode 6.

The gate electrode 2 is an electrode composed of an impurity diffusion layer formed by introducing an N-type impurity at a high concentration into the surface layer portion of the silicon substrate. Of course, for example, a plastic substrate may be used as the substrate, and a metal film such as nickel (M) or aluminum (A1) may be formed on the substrate to form the gate electrode 2. The gate electrode 2 is provided on the substrate so as to face the organic material layer 4 through the gate insulating film 3 in at least the interelectrode region 7 between the electrodes 5 and 6.

The gate insulating film 3 is made of, for example, silicon oxide (SiO 2), tantalum pentoxide (Ta 0), an oxide of aluminum (A 1 0), a polymer such as a nopolac resin and polyimide, and the like.

The organic material layer 4 may be a P-type organic semiconductor layer made of a P-type organic semiconductor material (hole transporting organic material) that can move holes injected from the carrier injection electrode 5! /, And may be an N-type organic semiconductor layer made of an N-type organic semiconductor material (electron transporting organic material) that can move electrons injected from the carrier injection electrode 5. Further, the organic material layer 4 can be composed of a bipolar organic semiconductor layer made of a bipolar organic semiconductor material capable of moving both holes and electrons. In this case, the electrodes 5 and 6 are both carrier injection electrodes, one of which is a hole injection electrode that injects holes into the organic material layer 4, and the other is an electron injection that injects electrons into the organic material layer 4. It becomes an electrode.

[0025] A typical P-type organic semiconductor material is pentacene, and the organic material layer 4 can be composed of a pentacene layer having a layer thickness of 50 nm. In addition, any material selected from the following P-type organic semiconductor materials can be used as a constituent material.

Pentacene, Tetracene, Antnracene and other materials. Phthalononin yarn with Copper Phthalocyamne ¼ material. Oligothiophene materials such as a_sexithiophene, a, ω_Dihexyi_sexithiophene, dihexy 1-anthradithiophene Bis (dithienothiophene), a, ω-Dihexy quinquethiophene. poly (3_hexylthiophene), poly (3_butylthiophene), etc. Thiophene material. In addition, low molecular weight materials such as oligophenylene ^ oligophenylenevinylene TPD, a_NPD, m-MTDATA, TPAC, TCTA, poly (phenylenevinylene), poly (thie nylenevinylene), polyacetylene, poly, vinylcarbazole, and more.

[0026] Further, as the N-type organic semiconductor material, any material selected from the following N-type organic semiconductor materials can be used as a constituent material.

NTCDI materials such as NTCDI, C-NTC, C-NTC, F-octy to NTC, F-MeBn-NTC. P

6 8 15 3

TCDI, C -PTC, C -PTC, C -PTC, C -PTC, Bu-PTC.F Bu-PTC, Ph-PTC, F P

6 8 12 13 7 5 h- PTCDI materials such as PTC. Others, TCNQ, C Fullerene, F-CuPc, F-Pentacen

60 16 14 e etc.

[0027] Further, as bipolar organic semiconductor materials, α NPD, Alq (Tris (8-hydro

Three

xyquinonnato alminum (III)), CBP (4,4 _Bis (carbazoto 9_yl) bipnenyl), B¾A—lm (9, 10-Bis (3-cyanostilil) anthracene), MEHPPV (Poly [2_Methoxy_5_ (2_ethylhexyloxy) _ 1, 4 -phenylenevinylene]) CN— PPP (Poly [2_ (6_cyano_6_methylheptyloxy) _ 1, 4-phe nylene), Bis (2_ (2_hydroxyphenyl) _benz_l, 3_thiazolato) zinc complex ^ Poly [(9,9_dih exylfluoren_2,7_diyl) _co_ (anthracen_9 , 10_diyl)]. .

[0028] In consideration of the organic material applied to the organic material layer 4, a material that easily exchanges a carrier with the organic material layer 4 is applied to the electrodes 5 and 6. Specifically, for example, gold (Au), aluminum (A1), magnesium gold (Mg-Au) alloy, magnesium silver (Mg-Ag) alloy, aluminum-lithium (A to Li) alloy, calcium (Ca), Electrodes 5 and 6 can be composed of platinum (Pt), ITO (solid solution of indium oxide (In 0) and tin oxide (SnO)), etc.

[0029] When the organic material layer 4 is composed of a P-type organic semiconductor layer (for example, a pentacene layer), the carrier injection electrode 5 side is positive between the electrodes 5 and 6 in the organic transistor 1 during semiconductor operation. A voltage is applied. When a negative voltage is applied to the gate electrode 2 in this state, a channel is formed in the organic material layer 4 between the electrodes 5 and 6. As a result, holes injected from the carrier injection electrode 5 are transported through the organic material layer 4 to the carrier extraction electrode 6. Thus, the electrodes 5 and 6 are electrically connected. When the voltage applied to the gate electrode 2 is removed, the channel in the organic material layer 4 disappears and the electrodes 5 and 6 are blocked. Electrodes 5, 6 The current between them varies depending on the voltage applied to the gate electrode 2. In this way, the transistor operation is performed.

2A to 2G are schematic cross-sectional views showing the method of manufacturing the organic transistor of FIG. 1 in the order of steps. First, as shown in FIG. 2A, a gate insulating film 3 is formed on a gate electrode 2 that also serves as a substrate, and an organic material layer 4 (first material layer) is formed on the gate insulating film 3 to form a layer. Further, a sacrificial layer 8 is formed on the organic material layer 4 in a laminated manner.

The sacrificial layer 8 is an inorganic material that is chemically stable with respect to the photoresist 9 described later, for example, a periodic table such as aluminum (A1), gallium (Ga), indium (In), and thallium (T1). (IUPAC, 1990) Examples include the metal materials belonging to the ΠΙΒ family, aluminum tantalum (A to Ta) alloys. In general, since metals such as aluminum are soluble in an alkaline aqueous solution, if the sacrificial layer 8 is such a metal, the sacrificial layer 8 can be easily dissolved and removed together with the photoresist 9 at the time of lift-off described later. Thus, the sacrificial layer 8 can be prevented from remaining in the organic material layer 4.

Next, in this state, as shown in FIG. 2B, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoregister 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4. As the photoresist 9, a material that undergoes a chemical change to a property soluble in an alkali developer upon exposure to ultraviolet light is used.

Next, after performing an appropriate beta treatment on the photoresist 9, as shown in FIG. 2C, a photomask 10A is disposed above the substrate in this state, and the photoresist 9 is selectively used. Exposed. That is, the photomask 10A is formed with openings 10a and 10b having shapes corresponding to the electrodes 5 and 6, respectively, and the photoresist 9 in a region corresponding to the openings 10a and 10b is selectively formed. UV exposure (selective exposure process). As a result, the portions of the photoresist 9 corresponding to the openings 10a and 10b are chemically changed to a property soluble in an alkali developer.

Next, as shown in FIG. 2D, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethyl ammonium hydroxide), so that the regions where the electrodes 5 and 6 are to be formed are developed. The organic material layer 4 is exposed (development process). Next, as shown in FIG. 2E, the entire surface is exposed to ultraviolet light, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

Next, as shown in FIG. 2F, electrodes 5 and 6 (second material layer), which are metal layers, are vapor-deposited on the entire surface. Further, as shown in FIG. Resist 9 is dissolved. Thereby, unnecessary portions of the electrodes 5 and 6 are lifted off together with the photoresist 9 (lift-off process), and the organic transistor 1 is completed.

As described above, the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the organic material layer 4, so that the influence on the organic material layer 4 is suppressed or prevented. The fine patterns of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the organic material layer 4. Also, by using an alkaline aqueous solution at the time of lift-off, the selectivity of the photoresist 9 with respect to the organic material layer 4 can be increased, and precise lift-off can be achieved.

FIG. 3 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the second embodiment of the present invention is applied.

This organic material device is an organic transistor integrated circuit element 29 in which a plurality of (for example, two) organic transistors 12P and 12N are formed on a substrate 11 (for example, a glass substrate, a silicon substrate, or a plastic substrate). is there.

Each organic transistor 12P, 12N includes a gate electrode 13, 14 formed on the substrate 11, a gate insulating film 15 stacked on the gate electrode 13, 14, and a predetermined on the gate insulating film 15. Electrodes 16P, 17, 16N formed with a gap (for example, 10 m), and organic semiconductor layers 18, 18 formed on these electrodes 16P, 17, 16N and arranged opposite to the gate electrodes 13, 14 19 and. That is, the organic transistor integrated circuit element 29 has a so-called bottom contact type structure in which the electrodes 16P, 17, 16N force S and the organic semiconductor layers 18, 19 are disposed on the same side as the gate electrodes 13, 14. is doing. The electrode 17 is shared by the pair of organic transistors 12P and 12N and connects them to each other.

One organic semiconductor layer 18 is a P-type organic semiconductor layer (first material layer), and the other organic semiconductor layer 19 is an N-type organic semiconductor layer (second material layer). That is, in this embodiment, a circuit having a complementary metal oxide semiconductor (CMOS) structure is formed on the substrate 11. Can be made. The P-type organic semiconductor layer 18 can be composed of the aforementioned P-type organic semiconductor material, and the same N-type organic semiconductor layer 19 can be composed of the aforementioned N-type organic semiconductor material.

[0038] Examples of the material of the gate electrodes 13 and 14 include the same material as that of the gate electrode 2 in the first embodiment described above.

Similarly, the gate insulating film 15 can be made of the same material as the gate insulating film 3 in the first embodiment described above.

The electrode 16P is a hole injection electrode that injects holes into the P-type organic semiconductor layer 18, and the electrode 16N is an electron injection electrode that injects electrons into the N-type organic semiconductor layer 19. Examples of the material of the electrodes 16P, 17 and 16N include the same materials as the electrodes 5 and 6 in the first embodiment described above.

[0039] The P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19 are composed of different types of organic materials.

In this organic transistor integrated circuit element 29, adjacent P-type organic semiconductor layer 18 and N-type organic semiconductor layer 19 are mutually connected for the purpose of element isolation for electrically separating individual organic transistors 12P, 12N. Separated with a gap D. This distance D is, for example, on the order of 1 micrometer, and this constitutes a submicron rule organic transistor integrated circuit element 29! /.

4A to 4F and FIGS. 5G to 5L are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps. In FIGS. 4A to 4F and FIGS. 5G to 5L, parts corresponding to those shown in FIGS. 2A to 2G are denoted by the same reference numerals as in FIGS. 2A to 2G.

First, as shown in FIG. 4A, gate electrodes 13 and 14, gate insulating film 15 and electrodes 16P, 17 and 16N were formed (gate electrodes 13 and 14 were patterned by photolithography, for example. Formation) Photoresist 20 is applied to the entire surface of the substrate 11 (more precisely, the surfaces of the gate insulating film 15 and the electrodes 16P, 17, 16N), and appropriate beta treatment is performed. A photomask 10B is disposed above the substrate 11 in this state, and the photoresist 20 is selectively exposed. That is, the photomask 10B has a P-type organic semiconductor layer 18 An opening 10c having a corresponding shape is formed, and the photoresist 20 in a region corresponding to the opening 10c is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 4B, by developing the photoresist 20 using an alkaline developer, a part of each of the electrodes 16P and 17 is exposed. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the P-type organic semiconductor layer 18 to be formed. Thereafter, as a surface treatment for enhancing the adhesion between the P-type organic semiconductor layer 18 and the gate insulating film 15 to be formed next, HMDS treatment is performed. Further, the P-type organic semiconductor layer 18 and the electrodes 16P, In order to enhance the adhesion with 17 (for example, made of Au), a surface treatment using a thiol compound is performed.

Next, as shown in FIG. 4C, the entire surface is exposed to ultraviolet rays, and all the photoresists 20 on the substrate 11 are exposed to ultraviolet rays.

Next, as shown in FIG. 4D, a P-type organic semiconductor layer 18 is deposited on the entire surface, and further, as shown in FIG. 4E, the photoresist 20 is dissolved using an alkali developer. As a result, unnecessary portions of the P-type organic semiconductor layer 18 are lifted off. Since the photoresist 20 has been previously exposed to ultraviolet rays in the step of FIG. 4C, it is easily dissolved in an alkaline developer and removed with a high selectivity with respect to the P-type organic semiconductor layer 18. In addition, since the HMDS treatment and the surface treatment with the thiol compound are performed before the P-type organic semiconductor layer 18 is formed, the bond between the P-type organic semiconductor layer 18 and the gate insulating film 15 and the electrodes 16P and 17 is also achieved at the time of lift-off. Firmly held. In this manner, the P-type organic semiconductor layer 18 in contact with these electrodes 16P and 17 can be formed in a region extending between the electrodes 16P and 17 of the organic transistor 12P.

Next, as shown in FIG. 4F, a sacrificial layer 8 is formed on the entire surface including the P-type organic semiconductor layer 18.

Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 5G. At this time, since the P-type organic semiconductor layer 18 is protected by the sacrificial layer 8, contact between the P-type organic semiconductor layer 18 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the P-type organic semiconductor layer 18.

Next, as shown in FIG. 5H, a photomask 10C is arranged above the substrate in this state, and the photoresist 9 is selectively exposed. In other words, the photomask 10C has an N-type organic half An opening 10d having a shape corresponding to the conductor layer 19 is formed, and the photoresist 9 in a region corresponding to the opening 10d is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 10d is chemically changed to a property soluble in an alkali developer.

Next, as shown in FIG. 51, the N-type organic semiconductor layer 19 is formed by developing the photoresist 9 using an alkali developer, for example, TMAH (tetramethyl ammonium hydroxide). The electrodes 16N and 17 in the region to be exposed are exposed (development process).

Next, as shown in FIG. 5J, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

Next, as shown in FIG. 5K, an N-type organic semiconductor layer 19 is deposited on the entire surface, and further, as shown in FIG. 5L, the photoresist 9 is dissolved using an alkaline developer. As a result, an unnecessary portion of the N-type organic semiconductor layer 19 is lifted off together with the photoresist 9 (lift-off process), and an organic transistor integrated circuit element 29 in which a plurality of types of organic transistors 12P and 12N are formed on the same substrate is obtained. Complete.

[0047] As described above, the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19; While suppressing or preventing the influence on the semiconductor layer 18 and the N-type organic semiconductor layer 19, that is, by photolithography that impairs the electrical characteristics of the P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19, In addition, both the P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19 can be formed in a fine pattern.

FIG. 6 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the third embodiment of the present invention is applied.

This organic material device is an RGB light emitting element 30 in which a plurality of colors (for example, three colors) of red organic ELs 22R, 22G, and 22B (collectively referred to as “organic EL22”) are formed on a substrate 21.

[0049] The substrate 21 is made of a material having a high light transmittance, such as a glass substrate or a plastic substrate. As a result, light generated in the organic EL 22 passes through the substrate 21 and is extracted outside. Organic EL22 has different types of luminescent dyes that emit red (R), green (G), and blue (B) colors. Therefore, they cannot be formed at the same time, and are formed separately into red organic EL22R, green organic EL22G, and blue organic EL22B. Each organic EL 22 includes a signal electrode 23 (anode) formed on the substrate 21, a red organic layer 24R, a green organic layer 24G, and a blue organic layer 24B (collectively referred to as “organic layer 24”). An electron injection layer 25 and a scanning electrode 26 (cathode) are provided. More specifically, the signal electrodes 23 are formed on the substrate 21 so as to be separated from each other at three positions, and an organic layer 24 is formed so as to cover each signal electrode 23, and an electron is formed on each organic layer 24. An injection layer 25 is formed. The scan electrode 26 is formed so as to cover the upper and side surfaces of the electron injection layer 25 and the side surface of the organic layer 24, and the scan electrode 26 and the signal electrode 23 are separated from each other by the organic layer 24. Contact is avoided.

[0050] The signal electrode 23 is an electrode for injecting holes into the organic layer 24. For example, ITO (solid solution of indium oxide (In 0) and tin oxide (SnO)), IZO (indium zinc oxide) ) Or a transparent electrode material such as zinc oxide (ZnO).

The organic layer 24 is a light emitting portion in the organic EL 22, and includes a hole transport layer 241, red, green, and blue light emitting layers 242R, 242G, and 242B (collectively, “light emitting layer 242”), and electron transport. The layer 243 is stacked on the signal electrode 23.

[0051] The hole transport layer 241 is a layer for transporting holes injected from the signal electrode 23 to the light emitting layer 242. For example, a _NPD, a jamin material such as TPD, or m-TDATA Etc.

In order to facilitate injection of holes from the signal electrode 23 into the hole transport layer 241, a hole injection layer may be interposed between the hole transport layer 241 and the signal electrode 23. Examples of the material for such a hole injection layer include Copper Phthalocyanine, m_MTD ATA (for example, a layer thickness of In m or less).

[0052] The light emitting layer 242 receives light from the hole transport layer 241 and receives electrons from the electron transport layer 243 to recombine these holes and electrons to generate light. The red light emitting layer 242R, the green light emitting layer 242G, and the blue light emitting layer 242B are configured corresponding to each organic EL 22 formed separately.

Each light emitting layer 242 has a carrier (hole or electron) transport capability! /, Which need not be! / Organic semiconductor materials with higher emission quantum efficiency than the hole transport layer 241 and electron transport layer 243, and the ability to be comprised of S. Preferably, a metal complex material exhibiting fluorescence such as Alq is doped with a fluorescent dye. Composed. For example, as red light emitting layer 242R, Alq is doped with DCM, for example, green light emitting layer 242G is as Alq is doped with Coumaline, for example, as blue light emitting layer 242B And Alq doped with Perylene.

[0053] The electron transport layer 243 is a layer for transporting electrons injected from the scan electrode 26 through the electron injection layer 25, and is made of, for example, a metal complex material such as Alq.

The electron injection layer 25 is a layer that acts to relax the energy barrier between the scan electrode 26 and the electron transport layer 243, and the electron injection layer 25 is interposed between the scan electrode 26 and the electron transport layer 243. Thus, electrons can be easily injected into the electron transport layer 243. Materials for the electron injection layer 25 include layers in which an electron transporting organic semiconductor such as Alq or Bathophenanthroline is doped with an alkali metal such as lithium (Li) or cesium (Cs), or lithium fluoride (LiF). Alkali metal / alkaline earth metal fluoride, germanium oxide (GeO), aluminum oxide (A1 0) and the like can be mentioned.

The scan electrode 26 is an electrode for injecting electrons into the electron transport layer 243 via the electron injection layer 25, and is a metal that easily injects electrons into the electron transport layer 243 with high conductivity. For example, aluminum (A1), calcium (Ca) magnesium aluminum (Mg-Al) alloy, aluminum lithium (A to Li) alloy, and the like.

During the light emission operation, for example, a positive voltage is applied to the signal electrode 23 and holes are injected into the hole transport layer 241. On the other hand, a negative voltage is applied to the scan electrode 26, and electrons are injected into the electron transport layer 243 through the electron injection layer 25. Then, these electrons and holes are transported through each layer and recombine in the organic material layer 4 to emit light. The emitted light passes through the signal electrode 23 and the substrate 21 and is extracted outside.

A two-dimensional color display device can be configured by arranging a plurality of pixels configured in the structure shown in FIG. 6 on the substrate 21 in a matrix.

FIGS. 7A to 7E, FIGS. 8F to 8I, FIGS. 9J to 9M, FIGS. ION to 10Q, and FIGS. 11R to 11U are schematic cross-sectional views showing the method of manufacturing the RGB light emitting device of FIG. This figure 7A ~ 7E, Figures 8F to 8I, Figures 9J to 9M, Figures ION to 10Q and Figures 11R to 11U, corresponding to the parts shown in Figures 2A to 2G, Figures 4A to 4F and Figures 5G to 5L described above Are denoted by the same reference numerals as in FIGS. 2A to 2G, FIGS. 4A to 4F and FIGS. 5G to 5L.

First, as shown in FIG. 7A, the surface of the substrate 21 on which the signal electrodes 23 are formed at a predetermined interval (for example, formed by patterning by photolithography) (more precisely, the substrate 21) Photoresist 20 is applied to the entire surface of the signal electrode 23 and an appropriate beta treatment. A photomask 10D is disposed above the substrate 21 in this state, and the photoresist 20 is selectively exposed. That is, an opening 10e having a shape corresponding to the red organic EL 22R is formed in the photomask 10D, and the photoresist 20 in a region corresponding to the opening 10e is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 7B, the signal electrode 23 corresponding to the red organic EL 22R is exposed by developing the photoresist 20 using an alkaline developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the red organic EL 22R to be formed.

Next, as shown in FIG. 7C, the entire surface is exposed to ultraviolet rays, and all the photoresists 20 on the substrate 21 are exposed to ultraviolet rays.

Next, as shown in FIG. 7D, a hole transport layer 241, a red light emitting layer 242 R, and an electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source, and a red organic layer is formed on the signal electrode 23. The layer 24R (first material layer) is formed to have a stacked structure. Further, as shown in FIG. 7E, the photoresist 20 is dissolved using an alkaline developer. As a result, unnecessary portions of the red organic layer 24R are lifted off.

Next, as shown in FIG. 8F, the sacrificial layer 8 is formed on the entire surface of the substrate 21 and the red organic layer 24R.

Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 8G. At this time, since the red organic layer 24R is protected by the sacrificial layer 8, contact between the red organic layer 24R and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the red organic layer 24R. Next, after performing an appropriate beta process on the photoresist 9, as shown in FIG. 8H, a photomask 10E is disposed above the substrate in this state, and the photoresist 9 is selectively used. Exposed. That is, the photomask 10E has an opening 10f having a shape corresponding to the green organic layer 24G, and the photoresist 9 in the region corresponding to the opening 10f is selectively exposed to ultraviolet rays (selective exposure step). ). As a result, the portion corresponding to the opening 1 Of of the photoresist 9 is chemically changed to a property soluble in the alkaline developer.

Next, as shown in FIG. 81, a region in which the green organic layer 24 G is to be formed is developed by developing the photoresist 9 using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide). The signal electrode 23 is exposed (development process).

Next, as shown in FIG. 9J, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

Next, as shown in FIG. 9K, a hole transport layer 241, a green light emitting layer 242 G, and an electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source. The layer 24G (second material layer) is formed to have a stacked structure. Furthermore, as shown in FIG. 9L, the photoresist 9 is dissolved using an alkaline developer. This lifts off unnecessary portions of the green organic layer 24G.

[0063] Thereafter, the same steps as in Fig. 8F to Fig. 81 and Fig. 9J to 9L are performed, and as shown in Fig. 9M, blue organic layer 24B is formed.

Next, as shown in FIG. 10N, the sacrificial layer 8 is formed on the entire surface of the organic layer 24 and the substrate 21. Next, in this state, as shown in FIG. 10O, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic layer 24 is protected by the sacrificial layer 8, contact between the organic layer 24 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic layer 24.

Next, as shown in FIG. 10P, a photomask 10F is disposed above the substrate 21, and the photoregister 9 is selectively exposed. That is, openings 10g to 10i having a shape corresponding to the electron injection layer 25 are formed in the photomask 10F, and the photoresist 9 in a region corresponding to the openings 10g to 10i is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 10Q, the photoresist 9 should be developed using an alkaline developer. As a result, the organic layer 24 is exposed. Thereafter, as shown in FIG. 11R, the entire surface is exposed to ultraviolet rays, and all the photoresists 9 on the substrate 21 are exposed to ultraviolet rays.

[0065] Next, as shown in FIG. 11S, an electron injection layer 25 is formed in each organic layer 24, and as shown in FIG. 11T, the photoresist 9 is dissolved using an alkali developer. Thereby, an unnecessary portion of the electron injection layer 25 is lifted off.

Then, as shown in FIG. 11U, the scanning electrode 26 is formed, and the RGB light emitting element 30 in which a plurality of organic ELs are formed on the same substrate is completed.

[0066] In this way, the action of the sacrificial layer 8 can prevent the photoresist 9 diluted in an organic solvent from coming into contact with each organic layer 24, so that the influence on the organic layer 24 is suppressed or prevented. Each organic layer 24 can be formed into a fine pattern by photolithography without impairing the electrical characteristics of the organic layer 24. As a result, a high-definition and high-quality 2D display device can be realized.

FIG. 12 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the fourth embodiment of the present invention is applied. In FIG. 12, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as in FIG.

This organic material device is an organic transistor integrated circuit element 31 in which a plurality of organic transistors 32 (three actually shown in FIG. 12, but actually more) are integrated.

Each organic transistor 32 has substantially the same configuration as the organic transistor 1 shown in FIG. 1, and the gate electrode 2 is integrally formed with the substrate 33 (for example, a glass substrate, a silicon substrate, or a plastic substrate). First, it differs from the organic transistor 1 in FIG. 1 in that it is formed separately on the substrate 33. Some of the electrodes 6 are shared by a pair of adjacent organic transistors 32, which are connected to each other! /.

FIGS. 13A to 13D, FIGS. 14E to 14H, and FIGS. 151 to 15L are schematic cross-sectional views showing a method of manufacturing the organic transistor integrated circuit device of FIG. 13A to 13D, 14E to 14H and 151 to 15L, FIGS. 2A to 2G, FIGS. 4A to 4F, and 5G to 5L correspond to the parts shown in FIGS. 2A to 2G, 4A to 4F and FIGS. 5G to 5L are denoted by the same reference numerals.

First, as shown in FIG. 13A, the gate electrode 2 and the gate insulating film 3 are formed (the gate electrode 2 For example, photoresist 20 is applied to the entire surface of the substrate 33 (formed by patterning by photolithography) (more precisely, the surface of the gate insulating film 3), and an appropriate beta treatment is performed. . A photomask 10G is disposed above the substrate 33 in this state, and the photoresist 20 is selectively exposed. That is, openings 10j to 101 having a shape corresponding to the organic material layer 4 are formed in the photomask 10G, and the photoresist 20 in a region corresponding to the openings 10j to 101 is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 13B, a portion of the gate insulating film 3 is exposed by developing the photoresist 20 using an alkaline developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the organic material layer 4 to be formed.

Next, as shown in FIG. 13C, the entire surface is exposed to ultraviolet rays, and all the photoresists 20 on the substrate 33 are exposed to ultraviolet rays.

Next, as shown in FIG. 13D, an organic material layer 4 (first material layer) is deposited on the entire surface, and as shown in FIG. 14E, the photoresist 20 is dissolved using an alkali developer. . As a result, the unnecessary partial force S of the organic material layer 4 is lifted off.

Next, as shown in FIG. 14F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4. Next, in this state, as shown in FIG. 14G, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

Next, after subjecting the photoresist 9 to an appropriate beta treatment, as shown in FIG. 14H, a photomask 10H is disposed above the substrate in this state, and the photoresist 9 is selectively exposed. To be lighted. That is, the photomask 10H has openings 10m to 10q having shapes corresponding to the electrodes 5 and 6, respectively, and the photoresist 9 in a region corresponding to the openings 10m to 10q is selectively exposed to ultraviolet rays. (Selective exposure step). As a result, the portion corresponding to the openings 10m to 10q of the photoresist 9 is chemically changed to a property soluble in an alkali developer.

[0074] Next, as shown in FIG. 151, an alkaline developer such as TMAH (tetramethylammonium The photoresist 9 is developed using the (Nymhydride mouth oxide) to expose the organic material layer 4 in the region where the electrodes 5 and 6 are to be formed (development process).

Next, as shown in 15J, the entire surface is exposed to ultraviolet light, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

Next, as shown in FIG. 15K, electrodes 5 and 6 (second material layer), which are metal layers, are vapor-deposited on the entire surface. Further, as shown in FIG. 15L, using an alkali developer, Photoresist 9 is dissolved. As a result, unnecessary portions of the electrodes 5 and 6 are lifted off together with the photoresist 9 (lift-off process), and an organic transistor integrated circuit element 31 in which a plurality of organic transistors 32 are integrated is completed.

In this way, the action of the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the organic material layer 4, thereby suppressing or preventing the influence on the organic material layer 4. In other words, the fine patterns of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the organic material layer 4. As a result, the device can be miniaturized and highly integrated.

FIG. 16 is an illustrative cross-sectional view for explaining the configuration of an organic material device to which the method according to the fifth embodiment of the present invention is applied. In FIG. 16, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as in FIG.

This organic material device is a top contact type organic transistor 35 in which a plurality of (for example, two) electrodes of different materials are formed in contact with the upper surface of the organic material layer 4.

The organic transistor 35 has substantially the same configuration as the organic transistor 1 shown in FIG. 1, and the gate electrode 2 is formed integrally with a substrate 36 (for example, a glass substrate, a silicon substrate, or a plastic substrate). The organic transistor 1 is different from the organic transistor 1 of FIG. 1 in that it is formed separately on the substrate 36 and the electrodes 5 and 6 are formed of different materials.

FIGS. 17A to 17F, FIGS. 18G to 18M and FIGS. 19N to 19S are schematic cross-sectional views illustrating the method of manufacturing the organic transistor of FIG. 16 in the order of steps. 17F, 17G, 18G and 18M and 19N and 19S, the parts corresponding to the parts shown in FIGS. 2A to 2G, 4A to 4F and 5G to 5L described above are shown in FIG. For 2G, Figures 4A-4F and Figures 5G-5L The same reference numerals are attached and shown.

First, as shown in FIG. 17A, the surface of the substrate 36 on which the gate electrode 2 and the gate insulating film 3 are formed (for example, the gate electrode 2 is formed by patterning by photolithography) (precisely, Photoresist 20 is applied to the entire surface of the gate insulating film 3) and appropriate beta treatment is performed. A photomask 101 is disposed above the substrate 36 in this state, and the photoresist 20 is selectively exposed. That is, an opening 10r having a shape corresponding to the organic material layer 4 is formed in the photomask 101, and the photoresist 20 in a region corresponding to the opening 10r is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 17B, each part of the gate insulating film 3 is exposed by developing the photoresist 20 using an alkali developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the organic material layer 4 to be formed.

Next, as shown in FIG. 17C, the entire surface is exposed to ultraviolet rays, and all the photoresists 20 on the substrate 36 are exposed to ultraviolet rays.

Next, as shown in FIG. 17D, an organic material layer 4 (first material layer) is deposited on the entire surface, and as shown in FIG. 17E, the photoresist 20 is dissolved using an alkali developer. . As a result, the unnecessary partial force S of the organic material layer 4 is lifted off.

Next, as shown in FIG. 17F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4. Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 18G. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

Next, after performing an appropriate beta process on the photoresist 9, as shown in FIG. 18H, a photomask 10J is disposed above the substrate in this state, and the photoresist 9 is selectively exposed. Lighted. That is, an opening 10s having a shape corresponding to the electrode 5 is formed in the photomask 10J, and the photoresist 9 in a region corresponding to the opening 10s is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 10s is chemically changed to a property soluble in the alkaline developer. Next, as shown in FIG. 181, an organic material in a region where the electrode 5 is to be formed is developed by developing the photoresist 9 using an alkaline developer, for example, TMAH (tetramethyl ammonium hydroxide). Layer 4 is exposed (development process).

Next, as shown in FIG. 18J, the entire surface is exposed to ultraviolet light, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

Next, as shown in FIG. 18K, an electrode 5 (second material layer), which is a metal layer, is vapor-deposited on the entire surface. Further, as shown in FIG. Is dissolved. As a result, the unnecessary portion of the electrode 5 is lifted off together with the photoresist 9 (lift-off process).

Next, as shown in FIG. 18M, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.

Next, in this state, as shown in FIG. 19N, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

Next, after performing an appropriate beta process on the photoresist 9, as shown in FIG. 190, a photomask 10K is placed above the substrate in this state, and the photoresist 9 is selectively exposed. . That is, an opening 10t having a shape corresponding to the electrode 6 is formed in the photomask 10K, and the photoresist 9 in a region corresponding to the opening 10t is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 10t is chemically changed to a property soluble in the alkaline developer.

Next, as shown in FIG. 19P, the organic material in the region where the electrode 6 is to be formed is developed by developing the photoresist 9 using an alkaline developer, for example, TMAH (tetramethyl ammonium hydroxide). Layer 4 is exposed (development process).

Next, as shown in FIG. 19Q, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (entire resist exposure step).

Next, as shown in FIG. 19R, an electrode 6 that is a metal layer is deposited on the entire surface. Here, as the material of the electrode 6, a material different from the material used for the evaporation of the electrode 5 is used. For example, the electrode 5 is made of gold (Au) and the electrode 6 is made of calcium (Ca). Also, electric If a material that easily reacts with an alkaline developer, such as aluminum (A1), is used as the electrode 6, the electrode 6 reacts with the alkaline developer during the final lift-off (see Fig. 19S), and the electrode becomes thin. There is a case. Therefore, when such a material is used, for example, vapor deposition is performed such that the electrode 6 is thicker than the electrode 5 (for example, a thickness difference h is provided).

Next, as shown in FIG. 19S, the photoresist 9 is dissolved using an alkaline developer. As a result, unnecessary portions of the electrode 6 are lifted off together with the photoresist 9 (lift-off process), and the organic transistor 35 in which a plurality of electrodes of different materials are formed is completed. As described above, the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the organic material layer 4, so that the influence on the organic material layer 4 is suppressed or prevented. The fine patterns of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the organic material layer 4.

FIG. 20 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the sixth embodiment of the present invention is applied. In FIG. 20, portions corresponding to the respective portions shown in FIG. 6 and FIG. 12 described above are denoted by the same reference numerals as those in FIG. 6 and FIG.

This organic material device is a composite integrated element 38 having an organic transistor and an organic EL.

[0091] The composite integrated element 38 includes an organic transistor 32 shown in FIG. 12 and a red organic EL 22R shown in FIG. 6 on a substrate 39 (for example, a glass substrate or a plastic substrate) at a predetermined interval. Yes. As the material for the electrodes 5 and 6, it is necessary to extract light generated in the red organic EL 22R to the outside, and therefore, a transparent electrode material that is the same material as the signal electrode 23 described above is used.

FIGS. 21A to 21F, FIGS. 22G to 22K, FIGS. 23L to 23P, and FIGS. 24Q to 24S are schematic cross-sectional views illustrating the method of manufacturing the composite integrated device of FIG. Figures 21A to 21F, Figures 22G to 22K, Figures 23 to 23P, and Figures 24Q to 24S (see Figure 7A to 7E, Figures 8F to 81, Figures 9J to 9M, Figures ION to 10Q, and 11R) ~ Figure 11U and Figure 13A ~ Figure 13D, Figure 14E ~; 14H and the parts corresponding to those shown in Figure 151 ~ Figure 15L are shown in Figure 7 A-7E, 8F-8I, 9J-9M, ION-10Q and 11R-11U, 13A-13D, 14E-14H and 151-15L. Attached is shown.

First, the steps of FIG. 21A to FIG. 21E (the same steps as FIG. 13A to FIG. 13D and FIG. 14E) are performed, and the organic material layer 4 is formed on the substrate 39.

Next, as shown in FIG. 21F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4. Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 22G. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

Next, after performing an appropriate beta process on the photoresist 9, as shown in FIG. 22H, a photomask 10M is disposed above the substrate in this state, and the photoresist 9 is selectively exposed. To be lighted. That is, the photomask 10M has openings 10v and 10w having shapes corresponding to the electrodes 5, 6 (23), respectively, and the photoresist 9 in the region corresponding to the openings lOv and lOw is selectively formed. UV exposure (selective exposure process). As a result, the portions of the photoresist 9 corresponding to the openings lOv and lOw are chemically changed to properties soluble in an alkali developer.

Next, as shown in FIG. 221, electrodes 5 and 6 (2 3) are formed by developing photoresist 9 using an alkali developer, for example, TMAH (tetramethyl ammonium hydroxide). The organic material layer 4 and the gate insulating film 3 in the region to be exposed are exposed (development process).

Next, as shown in FIG. 22J, the entire surface is exposed to ultraviolet light, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

Next, as shown in FIG. 22K, electrodes 5, 6 (23) are vapor-deposited on the entire surface, and further, as shown in FIG. 23L, the photoresist 9 is dissolved using an alkali developer. . Thus, unnecessary portions of the electrodes 5, 6 (23) are lifted off together with the photoresist 9 (lift-off process). Next, as shown in FIG. 23M, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.

Next, in this state, as shown in FIG. 23N, a photoresist 9 is applied on the sacrificial layer 8. The At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

Next, after an appropriate beta treatment is performed on the photoresist 9, as shown in FIG. 230, the photomask 10N is disposed above the substrate in this state, and the photoresist 9 is selectively exposed. That is, an opening ΙΟχ having a shape corresponding to the photomask 10N and the red organic layer 24R is formed, and the photoresist 9 in a region corresponding to the opening ΙΟχ is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 1 Ox is chemically changed to a property soluble in an alkaline developer.

[0098] Next, as shown in FIG. 23P, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethyl ammonium hydroxide), so that the red organic layer 24R is formed. The electrode 6 (23) is exposed (development process).

Next, as shown in FIG. 24Q, the entire surface is exposed to ultraviolet light, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

Next, as shown in FIG. 24R, the hole transport layer 241, the red light emitting layer 242 R, and the electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source, so that the electrode 6 (23) The red organic layer 24R is formed to have a laminated structure. Then, the electron injection layer 25 and the scan electrode 26 are formed on the red organic layer 24R. Further, as shown in FIG. 24S, the photoresist 9 is dissolved using an alkali developer. As a result, the unnecessary portion of the red organic layer 24R is coffed off (lift-off process), and the composite integrated device 38 having the organic transistor and the organic EL is completed.

[0100] Thus, the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the organic material layer 4 and the red organic layer 24R, and thus the organic material layer 4 and the red organic layer. Both organic material layer 4 and red organic layer 24R are made fine by photolithography while suppressing or preventing the effect on layer 24R, that is, without damaging the electrical properties of organic material layer 4 and red organic layer 24R. Can be formed into a pattern. Therefore, a high-definition composite integrated device can be realized.

[0101] In the above manufacturing method, red organic EL22R was formed as organic EL22. The green organic EL22G and blue organic EL22B shown in Fig. 6 can also be formed.

As described above, the force described in the embodiment of the present invention can be implemented in still other forms. For example, a film made of TPD / Copper Phthalocyanine (CuPc) or the like can be formed as a protective film in order to flatten the surface of the organic material layer and prevent pinholes from occurring in the sacrificial layer.

Although the embodiments of the present invention have been described in detail, these are only specific examples used to clarify the technical contents of the present invention, and the present invention is construed as being limited to these specific examples. The spirit and scope of the present invention should not be limited only by the appended claims.

This application corresponds to Japanese Patent Application No. 2006- 26553 8 filed on this application (September, 2006, September 28, 2006), the entire disclosure of which is incorporated herein by reference. .

Claims

The scope of the claims

[1] forming a sacrificial layer made of an inorganic material on a first material layer made of an organic material formed on a substrate;

Forming a resist in a region on the substrate including the sacrificial layer; and a selective exposure step of selectively exposing the resist in a predetermined pattern;

A developing step of dissolving the resist portion exposed in the selective exposure step and the sacrificial layer directly below the developer with an aqueous solution capable of dissolving the sacrificial layer;

Forming a second material layer on the substrate after the development step;

The second material layer on the resist is lifted off by dissolving the resist and the sacrificial layer directly below the developer with an aqueous solution capable of dissolving the sacrificial layer, and the second material layer is patterned. A method for manufacturing an organic material device, including a lift-off process for Jung.

[2] An all resist exposure process in which an unexposed portion of the resist remaining on the substrate after the development process is exposed to chemically change the resist to a property soluble in a developer used in the lift-off process. In addition,

2. The method of manufacturing an organic material device according to claim 1, wherein a step of forming the second material layer is performed after the entire resist exposure step.

[3] The method for producing an organic material device according to [1], wherein the developing solution used in the developing step and the lift-off step is an alkaline aqueous solution.

4. The method for manufacturing an organic material device according to claim 1, wherein the sacrificial layer is a metal layer.

5. The method for manufacturing an organic material device according to claim 1, wherein the first material layer is an organic semiconductor material layer.

6. The method for manufacturing an organic material device according to claim 1, wherein the second material layer includes a metal layer.

7. The method of manufacturing an organic material device according to claim 1, wherein the second material layer includes an organic material layer of a different type from the organic material layer constituting the first material layer.

8. The method for manufacturing an organic material device according to claim 1, wherein the first material layer has a laminated structure of a plurality of organic material layers. 9. The method for manufacturing an organic material device according to claim 1, wherein the second material layer has a laminated structure of a plurality of organic material layers.