WO2008032910A1 - Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof - Google Patents
Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof Download PDFInfo
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- WO2008032910A1 WO2008032910A1 PCT/KR2007/000832 KR2007000832W WO2008032910A1 WO 2008032910 A1 WO2008032910 A1 WO 2008032910A1 KR 2007000832 W KR2007000832 W KR 2007000832W WO 2008032910 A1 WO2008032910 A1 WO 2008032910A1
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- Prior art keywords
- reactive gas
- gas
- showerhead
- reactive
- reaction chamber
- Prior art date
Links
- 239000007789 gas Substances 0.000 title claims abstract description 436
- 239000007924 injection Substances 0.000 title claims abstract description 140
- 238000002347 injection Methods 0.000 title claims abstract description 140
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 13
- 238000010926 purge Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000009792 diffusion process Methods 0.000 claims abstract description 35
- 238000002156 mixing Methods 0.000 claims abstract description 34
- 238000001816 cooling Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims description 65
- 238000011109 contamination Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000002826 coolant Substances 0.000 claims description 10
- 230000001965 increasing effect Effects 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 8
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 4
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 13
- 230000001681 protective effect Effects 0.000 abstract description 5
- 239000011261 inert gas Substances 0.000 abstract description 4
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 4
- 238000009833 condensation Methods 0.000 abstract description 2
- 230000005494 condensation Effects 0.000 abstract description 2
- 238000010574 gas phase reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 description 1
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- HAIMOVORXAUUQK-UHFFFAOYSA-J zirconium(iv) hydroxide Chemical class [OH-].[OH-].[OH-].[OH-].[Zr+4] HAIMOVORXAUUQK-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Definitions
- the present invention relates to an apparatus and a method for chemical vapor deposition (CVD) with a showerhead which supplies a plural kind of reactive gases and a purge over a substrate to grow a film on the substrate uniformly in thickness and composition.
- CVD chemical vapor deposition
- the present invention is associated with U.S. Patent No. 7,156,921 ("Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate", filed on October 9, 2002), the entire contents of which are hereby incorporated by reference. Background Art
- a reactive gas is introduced into a vacuum reaction chamber, flows through a showerhead, and reaches a susceptor or a substrate holder on which a substrate is located.
- the reactive gas causes chemical reaction on the substrate to form a desired film.
- a method of simply heating the substrate or atomically exciting the reactive gas, such as making plasma is widely used.
- byproduct gases are removed from the reaction chamber by an exhaust system including a vacuum pump, then, passing through a purifying system, finally, being discharged into the atmosphere.
- the reactive gases do not react each other in a gaseous state.
- the mixture may cause homogeneous reactions in the gas phase leading to a generation of contaminant particles, or cause heterogeneous reactions on a solid-state surface such as a showerhead surface or a reaction chamber wall.
- the reactive gas is sensitive to a specific material.
- zirconium tert-butoxide (Zr(OC 4 H 9 ) 4 ) is extremely sensitive to moisture, which is strongly like to form zirconium hydroxide (Zr(OH) ) of white powder type.
- the moisture could have been physically adsorbed on the inner side of the reaction chamber, but it may be also generated over the substrates as a byproduct gas. Then, the moisture reacts with Zr(OC 4 H 9 ) 4 on the inner wall of the reaction chamber or the surface of the showerhead, depositing zirconium hydroxides.
- the unwanted deposits are eventually flaked off into fine particles due to a repeated thermal expansion and contraction and/or a lattice parameter mismatch between the surface materials and the deposits. As a result of this, the film formed on the substrate may be contaminated and the productivity becomes deteriorated due to a shortened process management cycle time to remove the unwanted deposits.
- contaminant particles may cause a pattern defect such as a short or disconnection between lines, and the size of the contaminant particle influencing yield is in proportion to the line width. Therefore, as the line size becomes smaller, that is, as the density of the integration is increased, the size of particle influencing yield becomes smaller, whereby the number of contaminant particles to be permitted in the reaction chamber is more seriously limited.
- FlG. 1 is a brief sectional view of a showerhead of a prior art, U.S. Patent No. 6,
- each reactive gas is supplied to the first ring type individual channels 23 through a plurality of gas supply passages 17, the gases are diffused in the first individual channels 23, and then, transmitted to the second ring type individual channels 27 through a plurality of transition passages 25 formed at the bottom of each channel.
- the reactive gases are supplied over a substrate through a plurality of second gas transition passages 31 which are formed at the bottom of the second channels.
- the reactive gases cause chemical reaction on the substrate (not shown) placed on a susceptor keeping temperature of the substrate higher than that of surroundings to form a desired film on the substrate.
- FlG. 2 is a brief sectional view of a prior art showerhead as described in
- the 1st purge gas injection holes 10b surround the reactive gas injection holes 10a and the 2nd purge gas injection holes 10c are arranged by proper intervals between the 1st purge gas injection holes 10b. In this configuration unwanted film deposition at the bottom of the showerhead would be suppressed by the work of the 1st and 2nd purge gases used. Disclosure of Invention Technical Problem
- a reactive gas such as metal-organic compound gas having a low decomposition temperature or sensitive to moisture may cause unwanted deposits at the bottom of the showerhead.
- the reactive gas injected from the bottom of the showerhead may diffuse backwardly and make a contamination at the bottom of the showerhead.
- the injection velocity of the 1st purge gas and the 2nd purge gas are highly dependant on the ratio of the total sectional areas of the 1st and 2nd purge gas injection holes. In this regards it seems very difficult to positively and optimally control the injection velocities of the 1st and 2nd purge gas.
- post mixing that is, mixing of a reactive gas and a purge gas at the space between the bottom of the showerhead and the substrate
- pre mixing that is, mixing of a reactive gas and a purge gas at the stage before entering into the reaction chamber.
- an inert gas is used as a purge gas
- post mixing is preferable in a CVD system.
- the prior art in FlG. 2 does not mention about the case using a plural kind of reactive gases. If a plural kind of reactive gas is mixed previously and supplied into the shower head, there is a strong likelihood that particles are generated within the showerhead.
- an apparatus for chemical vapor deposition (CVD) with a showerhead and a method thereof wherein each reactive gas is supplied to the substrate independently while passing through the showerhead, wherein a purge gas is injected from the bottom surface of the showerhead and forms a protective curtain, wherein the injection velocity of each kind of reactive gas is positively and externally regulated to make a uniform mixing of the reactive gases over the substrate, and wherein the showerhead is applied to a reactive gas confining means which surrounds the substrate and extended to the bottom of the reaction chamber at its one end.
- CVD chemical vapor deposition
- a plural kind of reactive gases and injection support gases are supplied into the showerhead in such a way that each reactive gas is mixed with each injection support gas in a mixing zone at inside of the showerhead, and a purge gas is supplied into a compartment formed at inside of the showerhead. Then, the reactive gas mixed with the injection support gas and the purge gas are injected through a large number of reactive gas exits and a large number of purge gas exits formed at the bottom surface of the showerhead, respectively, thereby the injection velocities of each reactive gas and the purge gas are positively regulated.
- the showerhead includes a plurality of reactive gas showerhead modules and a purge gas showerhead module separated each other, the number of the reactive gas showerhead modules is same as the number of kinds of reactive gases, and a large number of reactive gas injection tubes are connected to the bottom of a reactive gas shower head module for injecting a reactive gas mixed with an injection support gas which is a kind of a inert gas.
- a purge gas showerhead module having a large number of guide tubes of which ends are hermetically joined at the holes formed at top and bottom plate of the purge gas showerhead module for accepting the reactive gas injection tubes along the inside thereof, is mounted under the reactive gas showerhead modules.
- a large number of exits are formed at the bottom of the purge gas showerhead module for injecting the purge gas.
- the guide tubes are also inserted to the reactive gas showerhead modules in such a way that reactive gas injection tubes connected to a reactive gas showerhead module at upper position passes through a reactive gas showerhead modules at lower position along the inside of the guide tube of the lower reactive gas showerhead module.
- a cooling jacket constitutes the lowest part of the showerhead by keeping the temperature of the showerhead at proper levels to suppress both condensation and thermal decomposition of the reactive gas in the showerhead.
- the present invention has a function that each reactive gas passes through a showerhead independently, thereby preventing mixing of the reactive gases at inside of the showerhead. Moreover, the present invention has a function that a purge gas is injected from a bottom surface of the showerhead and forms a protective curtain beneath the bottom of the showerhead, thereby suppressing diffusion of the reactive gas backwardly. Moreover, the present invention has a function that the injection velocity of each reactive gas is positively regulated by controlling the amount of the injection support gas which is mixed to the reactive gas in the showerhead, thereby determining composition of the film growing on substrates easily.
- the present invention has a function that the temperature of showerhead is maintained at proper levels by mounting a cooling jacket which constitutes the lowest part of the showerhead, thereby unwanted film deposition caused by thermal decomposition of the reactive gases is suppressed at inside and bottom of the showerhead.
- the present invention is applied to a CVD system together with a reactive gas confining means, the contamination at inside of the reactive gas confining means is prevented, and the film growth rate is increased by confining the reactive gas in the vicinity of the substrates.
- Figure 1 is a brief sectional view showing a conventional showerhead which guides and injects different kinds of reactive gases to the substrate
- Figure 2 is a brief sectional view showing a conventional showerhead capable of preventing unwanted film deposition at the bottom thereof in case that one reactive gas is used
- Figure 3 is an perspective view of a showerhead of a first embodiment according to the present invention illustrating that a plurality of reactive gas showerhead modules and a purge gas showerhead module are vertically laid in an order
- Figure 4 is a sectional view of a showerhead of a first embodiment wherein the mixing of a reactive gas and an injection support gas occurs in a compartment thereof
- Figure 5 is a detailed sectional view of a purge gas showerhead module showing purge gas exits and guide tubes of which end is hermetically joined to the bottom thereof;
- Figure 9 is a detailed sectional view of a mixing zone of the third embodiment.
- Figure 10 is a sub-sectional view of a showerhead having a cooling jacket which is placed under the purge gas showerhead module and keeps the temperature of the showerhead at proper levels;
- Figure 11 is a schematic view showing magnitudes of injection velocities of a plurality of reactive gases and a purge gas at the bottom of the showerhead;
- Figure 12 is a bottom view showing an arrangement that rows and columns of the reactive gas injection tubes are crossed in a perpendicular direction and the two adjacent columns are shifted at a distance and staggered;
- Figure 13 is a bottom view showing an arrangement that locations of reactive gas injection tubes are repeated to multiple circumferential directions;
- Figure 14 is a brief sectional view showing a first example that the showerhead according to the present invention is applied to a reactive gas confining means;
- FIG. 15 is a brief sectional view showing a second example that the showerhead according to the present invention is applied to another type of a reactive gas confining means; Best Mode for Carrying Out the Invention
- the purge gas in the present invention doesn't either dissolve or generate byproducts by itself.
- the purge gas includes Ar, N , and He. If no chemical reactions are induced in the showerhead, H or O may be included as a purge gas and may participate in the deposition process on substrates as a source material.
- the purge gas having a relatively small molecular weight, diffuses instantly in the reaction chamber and is relatively less influenced by a force circulation caused by the act of vacuum pump.
- the reactive gas is a source material gas that participates directly in the deposition process on substrates by pyrolysis, combination, and/or etc., for example, a gaseous source material containing components of the film deposited, a mixture of a vaporized source material containing components of the film deposited and a carrier gas for vaporizing, or a purely vaporized source material containing components of the film deposited without the aid of carrier gas.
- the source material includes, for example, Pb(C H ) for Pb, Zr(OC H ) for Zr, and Ti(OC H ) for Ti, which are all
- the carrier gas includes, for example, Ar, N , He, H and etc.
- the reactive gas causes adsorption and surface reaction on all of the inner structure of the reaction chamber including substrates, reaction chamber inner wall, and the showerhead.
- the injection support gas is a kind of an inert gas, such as Ar, N , or H . If no chemical reactions are induced in the showerhead, H or O may be included as an injection support gas too.
- FIGS. 3 to 6 show a first embodiment of the present invention. As shown in FlG. 3 two reactive gas showerhead modules and one purge gas showerhead module are vertically laid in an order. If more than two kinds of reactive gases are used, the number of the reactive gas showerhead modules may be 3, 4, or larger.
- a reactive gas and an injection support gas are respectively introduced into a diffusion room 171 and a mixing room 172 of the upper reactive gas showerhead module 110 along a reactive gas inlet 123 and an injection support gas inlet 125, respectively.
- the diffusion room 171 consists of a top plate 161, an upper wall 163, and an upper diaphragm 135, wherein the reactive gas delivered along the reactive gas inlet 123 is diffused. Then, the reactive gas is delivered into the mixing room 172 through a large number of holes 137 of the upper diaphragm 135.
- the mixing room 172 consists of the said upper diaphragm 135, a middle wall 165, and a lower diaphragm 145, wherein the injection support gas delivered along the injection support gas inlet 125 is mixed with the reactive gas delivered from the said diffusion room 171 via holes 137 at the upper diaphragm 135.
- the mixture of the reactive gas and the injection support gas is delivered into a distribution room 173 through a large number of holes 147 perforated at the lower diaphragm 145.
- the distribution room 173 consists of the said lower diaphragm 145, a lower wall 167, and a bottom 169, wherein the mixture of the reactive gas and the injection support gas delivered from the said mixing room 172 is equally distributed to a large number of reactive gas injection tubes 151 joined hermetically to holes of the bottom 169 thereof.
- the holes 137 of the upper diaphragm 135 and holes 147 of the lower diaphragm 145 are small enough to induce a uniform mixing in the mixing room 172, for example, 0.3 to 0.6 mm in diameter.
- the reactive gas injection tube 151 would be extended a rather long distance, about 60 to 120mm. In this regards, the inner diameter of the reactive gas injection tube 151 is recommended to be at least 1.5mm.
- the reactive gas injection tube 151 passes through the lower reactive gas showerhead module 210 along a guide tube 281 of which ends are hermetically joined to holes formed at top 261 and bottom plate 269 of the lower reactive gas showerhead module 210.
- a purge gas is introduced into a purge gas showerhead module 410 through a purge gas inlet 423 thereof, sufficiently diffused at inside of the purge gas showerhead module 410 after flowing through a large number of holes 437 formed at the intermediate plate 435, and then, injected from the purge gas exits 446 which are located at the bottom 469 of the purge gas showerhead module 410.
- the size of the purge gas exit 446 is small enough to induce uniform distribution of the purge gas within the purge gas showerhead module, where the recommended size is 0.3 to 0.6mm in inner diameter. If the cooling jacket to be explained later is mounted under the purge gas showerhead module 410, it is necessary that the purge gas exit 446 is extended towards the substrate within a predetermined distance ("d " in FlG. 5), for example, 3mm.
- the reactive gas injection tubes 151 and 251 which are respectively extended from the reactive gas showerhead modules 110 and 210 pass through the purge gas showerhead module 410 along guide tubes 481, wherein the ends of the guide tube 481 are hermetically joined to the holes formed at top 461 and bottom plate 469 of the purge gas showerhead module 410 as shown in FlG. 5. If there exists a gap between the guide tube 481 and the hole 450 of the bottom 469 of the purge gas showerhead module 410, "g " in FlG. 6, a slight enhancement might be expected in the prevention of unwanted particle deposits at the tip of the reactive gas injection tubes 151 or 251.
- the structure becomes complicated and it is not easy to determine the injection velocity of the purge gas via the purge gas exits and the injection velocity of the purge gas via the gaps independently.
- the inertia of the reactive gas injected from the end tip of the reactive gas injection tube would play more role in the prevention of the contamination at the tips rather than the effect of the purge gas injected from the gap.
- the purge gas injected from the purge gas exit still plays an important role in making a protective curtain beneath the showerhead.
- FIGS. 7 shows a second embodiment of the present invention, wherein a mixing of the reactive gas and the injection support gas is promoted within the reactive gas showerhead module.
- a reactive gas and an injection support gas are respectively introduced into a reactive gas diffusion room 861 and an injection support gas diffusion room 862 of the reactive gas showerhead module 110 along a reactive gas inlet 123 and an injection support gas inlet 125, respectively.
- the reactive gas passes through the injection support gas diffusion room 862 along a large number of reactive gas diffusion channels 865. It is required that one end of the reactive gas diffusion channel 865 is hermetically joined to the bottom 835 of the reactive gas diffusion room 862 so as to suppress the backward diffusion of the injection support gas to the reactive gas diffusion room 861. Laser welding technology would be used adequately in joining process.
- the number and the size of the reactive gas diffusion channels are between 0.2 to 0.4 per unit square cm and 0.8 to 1.6mm in inner diameter, respectively. Instead, a large number of tiny holes 847, of about 0.3 to 0.6 mm in diameter, are formed at the bottom 845 of the injection support gas diffusion room 862 to assure a uniform injection of the injection support gas to the distribution room 863. Then, the reactive gas and the injection support gas are mixed in the distribution room 863 and distributed equally to the reactive gas injection tube 151.
- FlG. 8 shows a third embodiment of the present invention.
- the main difference of the third embodiment to the first or second embodiment is a location of a mixing zone in the showerhead.
- a reactive gas is entered into a reactive gas diffusion room 711 via a port 713 and equally distributed to a large number of inner reactive gas injection tubes 751 joined at the bottom 719 thereof.
- An injection support gas is entered into an injection support gas diffusion room 712 via a port 723 and is equally distributed to a large number of outer reactive gas injection tubes 752 joined at the bottom 729 thereof.
- the inner reactive gas injection tube 751, surrounded by the outer reactive gas injection tube 752 is extended toward the substrate and passes through the purge gas showerhead module 780 along a guide tube 781.
- the inner reactive gas injection tube 751 is shorter than the outer reactive gas injection tube 752 by 5 to 10mm at its end.
- the reactive gas diffusion room 711 and the injection support gas diffusion room 712 are hermetically tightened by an O-ring 754 and bolts 799.
- An inner reactive gas injection tube and an outer reactive gas channel constitutes a reactive gas injection tube as a pair, and the mixing of the reactive gas and the injection support gas occurs at a mixing zone 777 formed between the ends of the inner and outer reactive gas injection tubes as shown in FlG. 9.
- a cooling jacket 510 is mounted under the purge gas showerhead module in the present invention.
- the cooling jacket 510 has a function to keep temperature of the showerhead at proper levels, for example, at temperature of 150 ⁇ 200°C.
- a coolant supplied into the cooling jacket 510 via a coolant supply port 523 flows through the inner space of the cooling jacket 510, then finally goes out of the reaction chamber(not shown).
- the coolant may be a compressed air, water, or etc. However, it cannot be emphasized too much that there should be no leakage of the coolant to the reaction chamber.
- a thermocouple(not shown) may be mounted at any proper place of the surface of the showerhead to measure and control showerhead temperature.
- the effect of cooling the showerhead in the present invention is apparent in the prevention of unwanted film deposition in the showerhead and on the bottom surface of the purge gas showerhead module caused by thermal decomposition at unnecessarily high temperature.
- the mixture of the reactive gas and the injection support gas is injected from the end of the reactive gas injection tube 151 and 251 toward the substrate(not shown). It is preferable that the end tip of the reactive gas injection tube 151 and 251 has a shape of converging nozzle so as to easily assemble showerhead modules each other to enhance prevention of unwanted particle deposition at the bottom of the showerhead by increasing the injection velocity of the reactive gas.
- the inner diameter of the nozzle at the end, denoted by d by d in FlG. 11, would be between 0.8 to 2mm.
- the end of the reactive gas injection tube 151 and 251 is extended from the bottom 479 of the showerhead 410 toward the substrate, the effect of the preventing unwanted particle deposition at the bottom of the showerhead would be increased, but the temperature at the end tip of the reactive gas injection tube 151 and 251 would rise much. In this regards the protrusion is recommended within 10mm.
- the injection velocity of each reactive gas can be positively regulated by the amount of injection support gas without influencing the delivering rate of the reactive gas.
- the injection velocity of the reactive gas A, V may be higher than that of reactive gas B, V . Therefore, the composition of films growing on substrates which is highly dependent on mass transport of each reactive gas can be more effectively determined.
- the flow rate of the purge gas via the purge gas exit 446 can be positively regulated too.
- a kind of reactive gas does not mix with another kind of reactive gas until they are injected from the showerhead, then, every kind of reactive gases and the purge gas injected are mixed together at the space between the bottom surface 479 of the showerhead 410 and the substrate. It is preferred that the bottom surface 479 of the showerhead 410 is spaced apart to the substrate by 20mm to 60mm so as to achieve best compromise between the uniformity and the growth rate of films growing on substrates.
- the number density of reactive gas injection tubes is directly related to the uniformity of the films on substrates.
- the appropriate number density is about 0.2 ⁇ 0.4 per unit square cm.
- the effective size of the bottom of the showerhead that is the area where the reactive gas injection tubes are formed, would be large enough to cover the substrate.
- the effective bottom size of the showerhead is about 200mm in diameter, and the total number of the reactive gas injection tubes of one kind lies between 60 and 120.
- the arrangement of the reactive gas injection tubes if the arrangement could assure a uniform spreading of the reactive gas, it would have any specific pattern or even randomness.
- FlG. 12 is a bottom view showing an arrangement that rows and columns of the reactive gas injection tubes are crossed in a perpendicular direction and the two adjacent columns are shifted at a distance and staggered.
- FlG. 13 is a bottom view showing an arrangement that locations of reactive gas injection tubes are repeated to multiple circumferential directions.
- FlG. 14 shows a first example that the showerhead 100 of the present invention is applied to a reactive gas confining means 900.
- the reactive gas confining means 900 is spaced apart from the inner wall 7 and the ceiling of the reaction chamber 1 at a distance, surrounds the substrate 9 with a dome-like roof, touches the bottom 961 of the reaction chamber along its end, has a large number of fine holes formed thereon and an opening part formed at the central portion of the roof thereof on which the rim of the showerhead 100 is placed along the opening so that the bottom surface of the showerhead 100 and the substrate are in parallel to and facing each other. Details about the reactive gas confining means are incorporated in U.S. Patent No. 7,156,921 by reference.
- two reactive gases, two injection support gases, and a first purge gas are delivered into the showerhead 100 through a reactive gas supply tubes 954A and 954B, injection support gas supply tubes 955A and 955B, and a first purge gas supply tube 956, respectively.
- a coolant enters into the showerhead 100 through a coolant supply tube 961 and goes out of the reaction chamber 1 through coolant return tube 962.
- a second purge gas is delivered into a space 970 between the reaction chamber wall 7 and the reactive gas confining means 900 via the second purge gas supply port 957.
- the reactive gas confining means 900 works to prevent unwanted particle deposition on the inner side thereof by the protective curtain effect of the second purge gas delivered from outside to inside of the reactive gas confining means 900.
- the contamination at the bottom of the showerhead is prevented by the function of the showerhead in the present invention described earlier.
- the growth rate of films grown on substrates is much enhanced by the effect of the second purge gas which confines the reactive gas in the vicinity of the substrate.
- FlG. 15 shows a case that the showerhead 100 of the present invention is applied to a reactive gas confining means 900 of another type.
- the reactive gas confining means 900 has a ceiling with a flat rim.
- the ceiling with a rim can be easily mounted on a device such as a protruded spot 966 in the reaction chamber 1.
- a gap between the ceiling and the vertical wall of the reactive gas confining means could be easily formed to permit in and out of the substrate 9.
- the present invention regardless of the condition whether the material is complicated to handle or the process is restrictive in CVD, thick films can be deposited without concern about the contamination of the reaction chamber including reaction chamber inner wall and showerhead. Therefore, the present invention can be effectively used as a solution in the process where unwanted films are grown on surfaces of internal parts of the reaction chamber caused by chemical reactions of reactive gases. Since the present invention comprises very simple and compatible structures, the detailed parts of the present invention can be easily adopted. For a new applicability, as the present invention is advantageous in growing PZT films as thick as 2 ⁇ 8D for inkjet head, the performance of the inkjet can be greatly enhanced and the inkjet technology can be more widely used in the deposition of electronic materials like LCD color filters. Moreover, the present invention has a wide industrial applicability including the miniaturization and high efficiency of electronic parts such as multi-layer ceramic chip condensers (MLCC).
- MLCC multi-layer ceramic chip condensers
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Abstract
Description
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112007002179.9T DE112007002179B4 (en) | 2006-09-16 | 2007-02-16 | Chemical vapor deposition device with a shower head for positively regulating the rate of injection of reactive gases and methods therefor |
JP2009528163A JP5372757B2 (en) | 2006-09-16 | 2007-02-16 | Chemical vapor deposition apparatus with shower head for positively adjusting the injection speed of reaction gas and method therefor |
US12/089,695 US8882913B2 (en) | 2006-09-16 | 2007-02-16 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
CN2007800343692A CN101517704B (en) | 2006-09-16 | 2007-02-16 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
US14/489,660 US9469900B2 (en) | 2006-09-16 | 2014-09-18 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
US14/489,730 US9476121B2 (en) | 2006-09-16 | 2014-09-18 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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KR20060089853 | 2006-09-16 | ||
KR10-2006-0089853 | 2006-09-16 | ||
KR20060124928 | 2006-12-08 | ||
KR10-2006-0124928 | 2006-12-08 | ||
KR10-2007-0008668 | 2007-01-29 | ||
KR1020070008668A KR100849929B1 (en) | 2006-09-16 | 2007-01-29 | Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof |
Related Child Applications (3)
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US12/089,695 A-371-Of-International US8882913B2 (en) | 2006-09-16 | 2007-02-16 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
US14/489,730 Division US9476121B2 (en) | 2006-09-16 | 2014-09-18 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
US14/489,660 Division US9469900B2 (en) | 2006-09-16 | 2014-09-18 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
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WO2008032910A1 true WO2008032910A1 (en) | 2008-03-20 |
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JP2010027868A (en) * | 2008-07-18 | 2010-02-04 | Toshiba Corp | Vapor-phase growth apparatus and vapor-phase growth method |
JP2010028056A (en) * | 2008-07-24 | 2010-02-04 | Nuflare Technology Inc | Film deposition apparatus, and film deposition method |
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JP2012039152A (en) * | 2011-11-08 | 2012-02-23 | Sharp Corp | Vapor phase growth device and vapor phase growth method |
JP2013074213A (en) * | 2011-09-28 | 2013-04-22 | Nuflare Technology Inc | Deposition device and deposition method |
KR101470476B1 (en) * | 2012-04-13 | 2014-12-08 | 한국생산기술연구원 | Chemical vapor deposition apparatus and method which can remove residual reaction gas from showerhead to outside of reactor |
US20150294883A1 (en) * | 2014-04-15 | 2015-10-15 | Siltronic Ag | Method for drying wafer substrates and wafer holder for conduction of the method |
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KR101470476B1 (en) * | 2012-04-13 | 2014-12-08 | 한국생산기술연구원 | Chemical vapor deposition apparatus and method which can remove residual reaction gas from showerhead to outside of reactor |
US9534724B2 (en) | 2012-05-11 | 2017-01-03 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Gas showerhead, method for making the same and thin film growth reactor |
US20150294883A1 (en) * | 2014-04-15 | 2015-10-15 | Siltronic Ag | Method for drying wafer substrates and wafer holder for conduction of the method |
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