WO2008028401A1 - Device and method for closing internal modes/functions of integrated circuit - Google Patents

Device and method for closing internal modes/functions of integrated circuit Download PDF

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Publication number
WO2008028401A1
WO2008028401A1 PCT/CN2007/002416 CN2007002416W WO2008028401A1 WO 2008028401 A1 WO2008028401 A1 WO 2008028401A1 CN 2007002416 W CN2007002416 W CN 2007002416W WO 2008028401 A1 WO2008028401 A1 WO 2008028401A1
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mode
function
integrated circuit
feature value
circuit
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PCT/CN2007/002416
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French (fr)
Chinese (zh)
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Jian Qiu
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Beijing Sinosun Technology Ltd.
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/22Safety or protection circuits preventing unauthorised or accidental access to memory cells

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A device and method for closing internal modes/functions of an integrated circuit, wherein the method comprises the steps of: writing a plurality of predetermined mode/function feature values respectively corresponding to multiple mode/function circuits in the nonvolatile memory of the integrated circuit, and storing it in the nonvolatile memory of the integrated circuit; the mode/function circuits in the integrated circuit adopting hierarchical resetting, and the mode/function feature values in the nonvolatile memory of the integrated circuit are verified one by one during the hierarchical resetting, and a corresponding operation is determined based on the result of the verification of the mode/function feature values in the nonvolatile memory.

Description

一种对集成电路关闭内部模式 /功能的装置和方法 技术领域  Device and method for shutting down internal mode/function of integrated circuit
本发明涉及一种包含有非易失性存储器的集成电路, 尤其涉及一种对集成电路关闭内 部模式 /功能的装置和方法。 背景技术  The present invention relates to an integrated circuit incorporating a non-volatile memory, and more particularly to an apparatus and method for shutting down internal modes/functions of an integrated circuit. Background technique
随着集成电路所具备的功能越来越复杂, 某些功能只有在特定的场合才用到, 而在其 他场合就需要禁止, 例如: 集成电路经过完整测试后, 为了防止非法用户通过测试模式窃 取或修改机密数据, 就需要关闭本来可用的测试模式或某些测试功能; 又如: 有时基于某 种销售策略, 同一版芯片针对不同用户需要开放不同的功能, 从而成为不同款的芯片, 因 此, 需要对集成电路内部的不同功能进行有选择的永久关闭; 再如, 所有带有非易失性存 储器的集成电路芯片设计需要关闭部分内部功能(比如, 非易失性存储器的写功能)。这样 就需要找到一种硬件实现方法, 可以使集成电路内部某些功能在特定条件下自动失效。  As the functions of integrated circuits become more and more complex, some functions are only used in specific situations, and in other cases, they need to be prohibited. For example: After the integrated circuit is fully tested, in order to prevent illegal users from stealing through test mode Or modify the confidential data, you need to close the available test mode or some test functions; Another example: Sometimes based on a certain sales strategy, the same version of the chip needs to open different functions for different users, thus becoming a different chip, therefore, There is a need for selective permanent shutdown of different functions within the integrated circuit; for example, all integrated circuit chip designs with non-volatile memory require the closure of some internal functions (eg, the write function of non-volatile memory). This requires finding a hardware implementation that allows certain functions within the integrated circuit to automatically fail under certain conditions.
现有技术的中国专利公开号 CN1093201 的专利文献公开了一种半导体存储器及其类型 的设置方法, 其包括: 将一个设有按照存入非易失性存储元件中的信息, 来选择存储器功 能的功能选择电路的半导体芯片密封在封装内, 通过写存储元件来设置存储器功能。 这样 从圆片工艺到组装步骤的过程都能变得相同, 便于批量生产和生产控制, 可在短期内提供 符合用户技术规格的存储器功能的半导体存储器。  The patent document of the prior art Chinese Patent Publication No. CN1093201 discloses a semiconductor memory and a method of setting the type thereof, comprising: providing a memory function according to information stored in the non-volatile storage element. The semiconductor chip of the function selection circuit is sealed in the package, and the memory function is set by writing the storage element. In this way, the process from the wafer process to the assembly step can be the same, facilitating mass production and production control, and providing a semiconductor memory that meets the user's specifications for memory functions in a short period of time.
但是, 该技术方案实际上需要两次圆片工艺, 也就是说需要额外增加一次设计和制版 过程, 这样就增加了很多的成本; 同时, 该方案不具有普遍意义, 只适用于半导体存储器 的设计。  However, this technical solution actually requires two wafer processes, which means that an additional design and plate-making process is required, which adds a lot of cost. At the same time, the scheme is not universal and only applies to the design of semiconductor memory. .
现有技术的美国专利号 US5432741公开了一种使电可擦除可编程只读存储器 (Erasable Programmable Read- Only Memory, EEPROM)的编程功能永久失效的电路, 其技术方案为: 提供一个单元非易失性存储元件, 封装前通过一个预先定义的探针点 (Probe Pad), 第一 次写该非易失性存储元件时打开电可擦除可编程只读存储器的编程功能, 而在封装后第二 次写该单元时永久关闭电可擦除可编程只读存储器的编程功能。 由于该探针点没有被封装 出来, 也就是说, 其已经被封装关闭, 因此无法再重新打开电可擦除可编程只读存储器的 编程功能。 但该方案需要一个额外的焊接点 (PAD)来支持该功能的实现; 并且该方案的安全性仅 仅以悍接点 (PAD)的没有封装出来为前提,在足够技术保证的情况下,可能会将焊接点 (PAD) 的封装破坏掉, 因此安全性不足; 该方案同样不具有普遍应用意义, 仅适用于禁止对非易 失性存储器操作的场合, 不能适用于所有各种需要对集成电路内部功能进行永久封闭的场 合。 A circuit for permanently invalidating a programming function of an Erasable Programmable Read-Only Memory (EEPROM) is disclosed in U.S. Patent No. 5,342,741, the disclosure of which is: The lossy storage component is pre-packaged through a predefined probe point (Probe Pad). When the non-volatile storage element is written for the first time, the programming function of the electrically erasable programmable read-only memory is turned on. The programming function of the electrically erasable programmable read only memory is permanently turned off when the unit is written for the second time. Since the probe point is not encapsulated, that is, it has been packaged closed, the programming function of the electrically erasable programmable read only memory cannot be reopened. However, the solution requires an additional solder joint (PAD) to support the implementation of this function; and the security of the solution is only based on the fact that the contact point (PAD) is not encapsulated, and with sufficient technical guarantee, it may The solder joint (PAD) package is broken, so the security is insufficient. This solution also has no universal application meaning. It is only suitable for the operation of non-volatile memory, and cannot be applied to all kinds of internal functions of the integrated circuit. For permanent closures.
现有技术的中国专利公开号 CN1469382 的专利文献公开了一种引导用只读存储器的写 保护实现方法, 属于半导体存储器芯片的应用技术领域。 其首先设置写保护数据寄存器和 写保护状态寄存器, 复位时将其各置一个初始值, 写保护状态寄存器处于 "写保护使能" 状态, 连续向数据寄存器写入数据, 写保护状态寄存器为 "写保护禁止"状态, 对引导用 只读存储器的片选信号进行译码, 使得引导用只读存储器的片选信号有效, 此时对引导用 只读存储器进行写操作, 写操作结束后, 向写保护数据寄存器写入一个数据, 使写保护状 态寄存器重新处于 "写保护使能"状态。  The patent document of the prior art Chinese Patent Publication No. CN1469382 discloses a write protection implementation method for a boot ROM, which belongs to the field of application technology of a semiconductor memory chip. It first sets the write protection data register and the write protection status register. When reset, it sets each initial value. The write protection status register is in the "write protection enable" state, and the data is continuously written to the data register. The write protection status register is " The write protection disables the "state", and decodes the chip select signal of the boot ROM, so that the chip select signal of the boot ROM is valid. At this time, the boot ROM is written, and after the write operation ends, The write protection data register writes a data, causing the write protection status register to be in the "write protection enable" state again.
同样, 该技术方案存在安全性不高, 不能适应多种状态下的保护作用, 而且, 其仅适 用于引导用只读存储器的写保护, 不能适用于需要对各种包含有非易失性存储器的集成电 路内部功能进行永久封闭的场合。  Similarly, the technical solution is not safe enough to adapt to the protection in multiple states, and it is only suitable for write protection of boot read-only memory, and cannot be applied to various non-volatile memories. The internal functions of the integrated circuit are permanently enclosed.
因此, 现有技术存在缺陷, 而有待于改进和发展。 发明内容  Therefore, the prior art has drawbacks that need to be improved and developed. Summary of the invention
本发明的目的在于提供一种对集成电路关闭内部模式 /功能的装置和方法,适用于所有 包含非易失性存储器并且有这种应用需求的集成电路, 并可通过在所述非易失性存储器的 特征值, 实现对写操作的永久禁止保护。  It is an object of the present invention to provide an apparatus and method for shutting down internal modes/functions of an integrated circuit, applicable to all integrated circuits including non-volatile memories and having such application requirements, and The characteristic value of the memory enables permanent protection against write operations.
为实现本发明目的而提供的一种对集成电路关闭内部模式 /功能的装置,包括至少一非 易失性存储器,还包括一设置单元, 用于设置集成电路中多种功能 /模式的电路分别对应的 多个模式 /功能特征值, 并将其存储在非易失性存储器中;  An apparatus for turning off an internal mode/function of an integrated circuit provided for the purpose of the present invention, comprising at least one non-volatile memory, further comprising a setting unit for respectively setting circuits of various functions/modes in the integrated circuit Corresponding multiple mode/function feature values and storing them in non-volatile memory;
一分级复位单元,用于在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位 过程中,逐个验证所述设置单元中的模式 /功能特征值,根据非易失性存储器中对特征值的 验证结果确定相应的操作。  a hierarchical reset unit for employing a hierarchical reset in the mode/function circuit of the integrated circuit, and verifying the mode/function feature value in the setting unit one by one in the hierarchical reset process, according to the feature in the non-volatile memory The result of the verification of the value determines the corresponding operation.
所述分级复位单元, 可以包括验证单元和复位单元, 其中:  The hierarchical reset unit may include a verification unit and a reset unit, where:
所述验证单元, 用于在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 / 功能电路的使能信号还没有产生之前, 在多个时钟周期内产生既定或者预先设定的各个模 式 /功能的电路的使能信号, 使各个模式 /功能的电路处于复位状态, 从设置单元中读取一 个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号; 所述复位单元, 用于在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的 电路打开或者关闭。 The verification unit is configured to generate a predetermined or preset time in a plurality of clock cycles before the power-on/reset of the integrated circuit is performed, and before the enable signal of each mode/function circuit has not been generated. Various modes The enable signal of the circuit of the type/function, so that the circuit of each mode/function is in the reset state, one or more mode/function feature values are read from the setting unit, the levels are verified one by one, and the circuit of each mode/function is verified. The resetting unit is configured to: when the circuit of the integrated circuit internal mode/function is powered on/reset, adopt a hierarchical reset, and control the internal part of the integrated circuit according to the verification result of the verified mode/function feature value by the verification unit. The mode/function circuit is turned on or off.
所述设置单元, 可以包括模式特征值设置子单元, 功能特征值设置子单元, 其中: 所述模式特征值设置子单元, 用于存储各个模式特征值;  The setting unit may include a mode feature value setting subunit, and a function feature value setting subunit, where: the mode feature value setting subunit is configured to store each mode feature value;
所述功能特征值设置子单元, 用于存储各个功能特征值。  The function feature value setting subunit is configured to store each function feature value.
所述验证单元, 可以包括模式特征值验证单元和功能特征值验证单元, 其中- 所述的模式特征值验证单元,用于在集成电路上电 /复位过程中, 从模式特征值设置子 单元中读取模式特征值, 然后进行验证, 并在验证通过后转换到工作模式或者测试模式, 并在模式特征值设置子单元中重新写入新的模式特征值;  The verification unit may include a mode feature value verification unit and a function feature value verification unit, where the mode feature value verification unit is configured to be used in the mode feature value setting subunit during the power-on/reset process of the integrated circuit Reading the pattern feature value, then verifying, and after the verification passes, transitioning to the working mode or the test mode, and rewriting the new mode feature value in the mode feature value setting subunit;
所述的功能特征值验证单元, 用于在集成电路上电 /复位过程中, 从功能特征值设置子 单元中读取功能特征值, 然后进行验证, 并在验证通过后对该功能相应的地址空间进行写 保护, 永久性禁止在该功能相应的电路上进行写操作。  The function feature value verification unit is configured to read a function feature value from the function feature value setting sub-unit during the power-on/reset process of the integrated circuit, and then perform verification, and the corresponding address of the function after the verification is passed The space is write-protected and the write operation on the corresponding circuit of the function is permanently prohibited.
所述多个模式 /功能特征值存储在非易失性存储器的非易失寄存器或者一次可编程区 域。'  The plurality of mode/function feature values are stored in a non-volatile register or a one-time programmable area of the non-volatile memory. '
所述的非易失性存储器, 是闪存, 或者电可擦除可编程只读存储器, 或者铁电存储器, 或者磁性随机存储器, 或者相变存储器中的一种。  The non-volatile memory is one of a flash memory, or an electrically erasable programmable read only memory, or a ferroelectric memory, or a magnetic random access memory, or a phase change memory.
所述模式为测试模式和 /或工作模式。  The mode is a test mode and/or a work mode.
所述功能为 RSA加密功能、 ECC加密功能、 非易失性存储器编程功能、 Scan扫描测试 功能、 Boundary- Scan边界扫描测试功能、 BIST内建自测试功能中的一种或者一种以上的 组合。  The functions are one or a combination of RSA encryption function, ECC encryption function, non-volatile memory programming function, Scan scan test function, Boundary-Scan boundary scan test function, BIST built-in self-test function.
为实现本发明目的还提供一种集成电路芯片, 包括至少一非易失性存储器, 还包括一 设置单元, 用于设置集成电路中多种功能 /模式的电路分别对应的多个模式 /功能特征值, 并将其存储在非易失性存储器中;  In order to achieve the object of the present invention, an integrated circuit chip is further provided, comprising at least one non-volatile memory, and further comprising a setting unit for setting a plurality of modes/functions corresponding to the circuits of the plurality of functions/modes in the integrated circuit respectively Value and store it in non-volatile memory;
一分级复位单元, 用于在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位 过程中, 逐个验证所述设置单元中的模式 /功能特征值,根据非易失性存储器中对特征值的 验证结果确定相应的操作。  a hierarchical reset unit, wherein the circuit for function/function in the integrated circuit adopts a hierarchical reset, and in the hierarchical reset process, the mode/function feature values in the setting unit are verified one by one according to the characteristics in the non-volatile memory The result of the verification of the value determines the corresponding operation.
所述分级复位单元, 可以包括验证单元和复位单元, 其中: 所述验证单元, 用于在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 / 功能电路的使能信号还没有产生之前, 在多个时钟周期内产生既定或者预先设定的各个模 式 /功能的电路的使能信号, 使各个模式 /功能的电路处于复位状态, 从设置单元中读取一 个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号; 所述复位单元, 用于在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的 电路打开或者关闭。 The hierarchical reset unit may include a verification unit and a reset unit, where: The verification unit is configured to generate a predetermined or preset time in a plurality of clock cycles before the power-on/reset of the integrated circuit is performed, and before the enable signal of each mode/function circuit has not been generated. The enable signals of the circuits of each mode/function enable the circuits of each mode/function to be in a reset state, read one or more mode/function feature values from the setting unit, verify the levels one by one, and verify the circuits of the respective modes/functions. The resetting unit is configured to: when the circuit of the integrated circuit internal mode/function is powered on/reset, adopt a hierarchical reset, and according to the verification result of the verification mode on the stored mode/function feature value, the integrated circuit is controlled. The internal mode/function circuit is turned on or off.
所述多个模式 /功能特征值存储在非易失性存储器的非易失寄存器或者一次可编程区 域。  The plurality of mode/function feature values are stored in a non-volatile register or a one-time programmable area of the non-volatile memory.
为实现本发明目的还进一步提供一种对集成电路关闭内部模式 /功能的方法,包括以下 步骤:  Further, in order to achieve the object of the present invention, there is still further provided a method of turning off an internal mode/function of an integrated circuit, comprising the steps of:
步骤 A, 向集成电路的非易失性存储器里中写入多种模式 /功能的电路分别对应的多个 预先设置的模式 /功能特征值, 并将其存储在集成电路的非易失性存储器中;  Step A, writing a plurality of preset mode/function feature values respectively corresponding to the circuits of the plurality of modes/functions into the non-volatile memory of the integrated circuit, and storing the same in the non-volatile memory of the integrated circuit Medium
步骤 B, 在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位过程中, 逐个 验证集成电路的非易失性存储器中的模式 /功能特征值, 根据非易失性存储器中对模式 /功 能特征值的验证结果确定相应的操作。  Step B, the circuit of the internal mode/function of the integrated circuit adopts a hierarchical reset, and during the hierarchical reset process, the mode/function characteristic value in the non-volatile memory of the integrated circuit is verified one by one according to the mode in the non-volatile memory. The verification result of the /feature feature value determines the corresponding operation.
所述步骤 B可以包括下列步骤:  The step B may include the following steps:
步骤 Bl, 在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 /功能电路的 使能信号还没有产生之前,在多个时钟周期内产生既定或者预先设定的各个模式 /功能的电 路的使能信号,使各个模式 /功能的电路处于复位状态, 从非易失性存储器中读取一个或者 多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号;  Step B1, during the power-on/reset of the integrated circuit, during the hierarchical reset of the integrated circuit, each mode/function is generated or preset in multiple clock cycles before the enable signal of each mode/function circuit has not been generated yet. The enable signal of the circuit, so that each mode/function circuit is in a reset state, one or more mode/function feature values are read from the non-volatile memory, and the levels are verified one by one, and the circuits of each mode/function are verified. Signal
步骤 B2, 在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单 元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的电路打开或 者关闭。  Step B2, when the circuit of the integrated circuit internal mode/function is powered on/reset, a hierarchical reset is adopted, and according to the verification result of the verification mode on the stored mode/function feature value, the circuit of the internal mode/function of the control integrated circuit is turned on or shut down.
所述步骤 B也可以包括下列步骤:  The step B may also include the following steps:
步骤 B10, 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能的电 路对应的地址数据不是第一功能的特征值, 置该第一功能为有效;  Step B10, in the power-on/reset process, detecting that the address data corresponding to the circuit of the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and the first function is valid;
步骤 B20, 在所述集成电路芯片上电复位结束后, 相应的第一功能的电路置为有效, 并且第一功能的电路对非易失性存储器中该第一功能特征值的编程写入能力尚未失去, 如 果需要关闭该第一功能的电路, 则向该第一功能的电路对应的地址写入第一功能特征值, 置该第一功能无效; Step B20, after the power reset of the integrated circuit chip is completed, the corresponding first function circuit is asserted, and the first function circuit writes the first functional characteristic value in the non-volatile memory. Not yet lost, if the circuit of the first function needs to be turned off, the first functional feature value is written to the address corresponding to the circuit of the first function, Setting the first function is invalid;
步骤 B30, 当所述集成电路芯片再次上电复位时, 检测到集成电路的非易失性存储器 里的第一功能的电路对应的数据不是第一功能特征值, 则第一功能, 就已经关闭, 其功能 为无效。  Step B30, when the integrated circuit chip is powered on and reset again, detecting that the data corresponding to the first function in the non-volatile memory of the integrated circuit is not the first functional characteristic value, the first function is closed. , its function is invalid.
所述步骤 B20还包括下列步骤:  The step B20 further includes the following steps:
步骤 B21, 如果第一功能的电路对该非易失性存储器中第二 ~第 N功能的功能特征值地 址的编程能力尚未失去, 同时需要关闭第二 ~第1^功能的电路中的一个或者多个功能, 则将 该功能的电路对应的功能特征值写入;  Step B21, if the circuit of the first function has not lost the programming capability of the function value address of the second to Nth functions in the non-volatile memory, and needs to turn off one of the circuits of the second to the first function or a plurality of functions, the function feature values corresponding to the circuit of the function are written;
所述步骤 B30还包括下列步骤- 步骤 B31 , 当所述集成电路芯片再次上电复位时, 检测到集成电路的非易失性存储器 里的第二~第 N功能的电路对应的数据不是第二〜第 N功能特征值,则第二 ~第 功能中的一 个或者多个功能就已经关闭, 其功能为无效。  The step B30 further includes the following step - step B31, when the integrated circuit chip is powered on again, detecting that the data corresponding to the second to Nth functions in the non-volatile memory of the integrated circuit is not the second ~ The Nth function feature value, then one or more of the second to the first functions are turned off, and the function is invalid.
所述步骤 B可以进一步包括下列步骤:  The step B may further comprise the following steps:
步骤 B100, 在集成电路上电复位过程中, 检测到集成电路的非易失性存储器虽模式特 征值存储地址的数据是第一模式特征值, 置该第一模式为有效;  Step B100: During the power-on reset of the integrated circuit, detecting the non-volatile memory of the integrated circuit, although the data of the mode characteristic value storage address is the first mode feature value, setting the first mode to be valid;
步骤 B200, 在所述集成电路芯片上电复位结束后, 相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 则向该 模式特征值存储地址中写入模式特征值;  Step B200, after the power reset of the integrated circuit chip ends, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the nonvolatile memory has not been lost. And writing a pattern feature value to the mode feature value storage address;
步骤 B300, 当所述集成电路芯片再次上电复位时, 检测到所述非易失性存储器设置单 元中为该相应模式的特征值, 所述集成电路芯片转换到该模式。  Step B300, when the integrated circuit chip is powered on again, detecting a characteristic value of the corresponding mode in the non-volatile memory setting unit, and the integrated circuit chip switches to the mode.
所述步骤 B200还包括下列步骤:  The step B200 further includes the following steps:
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
所述步骤 B可以更进一步包括下列步骤:  The step B may further include the following steps:
步骤 B1000, 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能的 电路对应的数据不是第一功能的特征值, 置该第一功能为有效;  Step B1000, in the power-on/reset process, the data corresponding to the circuit that detects the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and the first function is valid;
步骤 B2000, 在第一功能有效的情况下, 检测到集成电路的非易失性存储器里模式特 征值存储地址的数据是第一模式特征值, 置该第一模式为有效; 步骤 B3000, 在所述集成电路芯片上电复位结束后, 相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 则向该 模式特征值存储地址中写入模式特征值; Step B2000, when the first function is valid, detecting that the data of the mode feature value storage address in the non-volatile memory of the integrated circuit is the first mode feature value, and setting the first mode to be valid; Step B3000, after the power-on reset of the integrated circuit chip is finished, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the non-volatile memory has not been lost. And writing a pattern feature value to the mode feature value storage address;
歩骤 B4000, 在集成电路芯片重新上电复位结束后, 相应的模式的电路置为有效, 该 模式的电路对该模式下的功能的电路相对应的非易失性存储器中该功能特征值的编程写入 能力尚未失去, 如果需要关闭该功能的电路, 则向该功能的电路对应的地址写入功能特征 值, 置该功能无效。  Step B4000, after the re-power-on reset of the integrated circuit chip is finished, the corresponding mode circuit is set to be valid, and the circuit of the mode corresponds to the functional characteristic value in the non-volatile memory corresponding to the function of the mode. The programming write capability has not been lost. If the circuit of the function needs to be turned off, the function feature value is written to the address corresponding to the circuit of the function, and the function is invalid.
所述步骤 B3000还包括下列步骤:  The step B3000 further includes the following steps:
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
所述多个预先设置的模式 /功能特征值存储于所述非易失性存储器的非易失寄存器或 者一次可编程区域。。  The plurality of pre-set mode/function feature values are stored in a non-volatile register or a one-time programmable area of the non-volatile memory. .
所述的非易失性存储器, 是闪存, 或者电可擦除可编程只读存储器, 或者铁电存储器, 或者磁性随机存储器, 或者相变存储器中的一种。  The non-volatile memory is one of a flash memory, or an electrically erasable programmable read only memory, or a ferroelectric memory, or a magnetic random access memory, or a phase change memory.
本发明所提供的一种对集成电路关闭内部模式 /功能的装置和方法,通过在存储区域内 存储的多个模式 /功能特征值, 实现在上电复位时的不同的模式 /功能的选择性关闭, 从而 增强了芯片的安全性, 并且针对不同情形实现了集成电路的永久选择性设置。 附图说明  An apparatus and method for shutting down an internal mode/function of an integrated circuit provided by the present invention achieves different mode/function selectivity at power-on reset by a plurality of mode/function feature values stored in a storage area Turning off, thereby enhancing the security of the chip, and achieving permanent selective setting of the integrated circuit for different situations. DRAWINGS
图 1为本发明对集成电路关闭内部模式 /功能的分级复位过程的示意图;  1 is a schematic diagram of a hierarchical reset process of an internal mode/function of an integrated circuit shutdown according to the present invention;
图 2为本发明方法的非易失性存储器存储单元结构示意图;  2 is a schematic structural diagram of a nonvolatile memory storage unit of the method of the present invention;
图 3为本发明的对集成电路关闭内部模式 /功能的方法过程流程图;  3 is a flow chart of a method for shutting down an internal mode/function of an integrated circuit according to the present invention;
图 4为本发明方法的功能关闭的设置流程流程图;  4 is a flow chart of a setting process of a function shutdown of the method of the present invention;
图 5为本发明方法的模式转换的设置流程图;  Figure 5 is a flow chart showing the setting of the mode conversion of the method of the present invention;
图 6为本发明方法的模式转换和功能关闭的设置流程图。 具体实施方式  Figure 6 is a flow chart showing the setting of mode switching and function closing of the method of the present invention. detailed description
为了使本发明的目的、 技术方案及优点更加清楚明白, 以下结合附图及实施例, 对本 发明的一种对集成电路关闭内部模式 /功能的装置和方法进行进一步详细说明。 应当理解, 此处所描述的具体实施例仅仅用以解释本发明, 并不用于限定本发明。 In order to make the objects, technical solutions and advantages of the present invention more comprehensible, the following An apparatus and method for inventing an internal mode/function of an integrated circuit is described in further detail. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
本发明的对集成电路关闭内部模式 /功能的装置和方法, 适用于所有非易失性存储器, 以及所有包含非易失性存储器并且具有多种模式 /功能保护的集成电路芯片中。  The apparatus and method of the present invention for turning off internal modes/functions of an integrated circuit are applicable to all non-volatile memories, as well as to all integrated circuit chips that include non-volatile memory and have multiple modes/functions of protection.
本发明的装置和方法的技术核心有两点: 第一, 设置集成电路中多种模式 /功能电路分 别对应的多个模式 /功能特征值; 第二, 所述集成电路内部相关模式 /功能电路采用分级复 位, 在分级复位的过程中强制逐个验证所述非易失性存储器设置单元中的模式 /功能特征 值, 以打开 /关闭对应的模式 /功能。  The technical core of the apparatus and method of the present invention has two points: First, setting a plurality of mode/function feature values respectively corresponding to multiple mode/function circuits in the integrated circuit; second, the integrated circuit internal related mode/function circuit With hierarchical reset, the mode/function feature values in the non-volatile memory setting unit are forced to be verified one by one during the hierarchical reset to turn on/off the corresponding mode/function.
本发明的包含非易失性存储器的集成电路, 还包括一设置单元, 用于设置集成电路中 多种功能 /模式的电路分别对应的多个模式 /功能特征值, 并将其存储在非易失性存储器的 特定位置中。  The integrated circuit including the nonvolatile memory of the present invention further includes a setting unit for setting a plurality of mode/function feature values corresponding to the circuits of the plurality of functions/modes in the integrated circuit, and storing the same in the non-easy In a specific location of the memory.
较佳地, 所述的特定位置, 位于所述非易失性存储器的非易失寄存器 (Non-Volatile Registers, NVR) 或者一次可编程 (One Time Programming, OTP) 区域。  Preferably, the specific location is located in a non-volatile memory (Non-Volatile Registers, NVR) or a One Time Programming (OTP) area of the non-volatile memory.
本发明实施例所述的各个模式 /功能特征值是需要在芯片设计阶段就应该设置好的,通 常可以存放于除程序存储区外的其他任何存储位置, 比如非易失性存储器的 NVR或 OTP区 域的设置单元中。  The various mode/function feature values described in the embodiments of the present invention need to be set at the chip design stage, and can usually be stored in any storage location other than the program storage area, such as NVR or OTP of non-volatile memory. In the setting unit of the area.
如图 1所示的, 作为一种可实施的方式, 所述非易失性存储器如闪存 (Flash ROM) 中 的 A块区域为非易失性存储器的 NVR/0TP区域, 其为功能特征值存储区域, 其中各个功能 特征值一旦经特征值验证电路验证通过,该功能特征值的地址空间就会被禁止再次写操作; B 区域为模式特征值存储区域, 其中各个模式特征值即使经特征值验证电路验证通过, 该 特征值的地址空间的写操作也不会被禁止。 C块区域为普通数据的存储区域。  As shown in FIG. 1 , as an implementable manner, the A block area in the non-volatile memory such as a flash ROM is an NVR/0TP area of a non-volatile memory, which is a functional feature value. a storage area, wherein each functional feature value is verified to pass the eigenvalue verification circuit, and the address space of the functional feature value is prohibited from being written again; the B region is a mode feature value storage region, wherein each mode feature value is subjected to the eigenvalue even When the verification circuit is verified, the write operation of the address space of the feature value is not prohibited. The C block area is a storage area of normal data.
也就是说, 一且各个模式 /功能特征值存放于非易失性存储器的设置单元里, 即使集成 电路芯片下电数据也不会丢失。  That is to say, each mode/function characteristic value is stored in the setting unit of the non-volatile memory, and the data is not lost even if the integrated circuit chip is powered off.
一分级复位单元, 用于在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位 过程中,逐个验证所述设置单元中的模式 /功能特征值,根据非易失性存储器中对特征值的 验证结果确定相应的操作。  a hierarchical reset unit, the circuit for functioning in the internal mode/function of the integrated circuit adopts a hierarchical reset, and in the hierarchical reset process, the mode/function feature values in the setting unit are verified one by one according to the characteristics in the non-volatile memory The result of the verification of the value determines the corresponding operation.
本发明的分级复位单元, 在集成电路内部模式 /功能的电路采用分级复位, 在分级复位 的过程中逐个验证所述设置单元中的模式 /功能特征值, 并根据特征值控制打开 /关闭对应 的模式 /功能的电路。  In the hierarchical reset unit of the present invention, the circuit in the internal mode/function of the integrated circuit adopts a hierarchical reset, and the mode/function feature value in the setting unit is verified one by one in the process of hierarchical reset, and the corresponding opening/closing is controlled according to the feature value. Mode/function circuit.
所谓分级复位,是指将芯片外部复位信号或芯片内部上电标识,利用模式 /功能特征值, 通过特征值验证单元来控制芯片内部各个模式 /功能电路的复位顺序,从而达到控制内部电 路的工作次序的目的。 The so-called hierarchical reset refers to the external reset signal of the chip or the internal power-on identification of the chip, using the mode/function feature value. The eigenvalue verification unit controls the reset sequence of each mode/function circuit inside the chip, thereby achieving the purpose of controlling the working order of the internal circuits.
较佳地, 所述分级复位单元, 包括验证单元和复位单元, 其中:  Preferably, the hierarchical reset unit comprises a verification unit and a reset unit, wherein:
所述验证单元, 用于在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 / 功能电路的使能信号还没有产生之前, 在多个时钟周期内产生既定或者预先设定的各个模 式 /功能的电路的使能信号, 使各个模式 /功能的电路处于复位状态, 从设置单元中读取一 个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号。  The verification unit is configured to generate a predetermined or preset time in a plurality of clock cycles before the power-on/reset of the integrated circuit is performed, and before the enable signal of each mode/function circuit has not been generated. The enable signals of the circuits of each mode/function enable the circuits of each mode/function to be in a reset state, read one or more mode/function feature values from the setting unit, verify the levels one by one, and verify the circuits of the respective modes/functions. Enable signal.
所述复位单元, 用于在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的 电路打开或者关闭。  The reset unit is configured to use a hierarchical reset when the circuit of the integrated circuit internal mode/function is powered on/reset, and controls the internal mode/function of the integrated circuit according to the verification result of the verification mode on the stored mode/function feature value. The circuit is turned on or off.
本发明的对集成电路关闭内部模式 /功能的装置, 在集成电路上电 /复位过程中, 分级 复位单元中的验证单元的电路首先复位完毕,在各个模式 /功能电路的使能信号还没有产生 之前, 在多个时钟周期内产生既定或者预先设定的各个模式 /功能的电路的使能信号, 使各 个模式 /功能的电路处于复位状态, 然后, 只有当验证单元的电路验证各个模式 /功能的电 路的使能信号后,才由分级复位单元的复位单元控制各个模式 /功能电路由复位状态进入打 开或者关闭状态,使得各个模式 /功能电路在分级复位单元的验证单元的控制下,根据模式 /功能特征值控制, 由复位单元打开或者关闭各个模式 /功能的电路。  In the device for turning off the internal mode/function of the integrated circuit of the present invention, during the power-on/reset process of the integrated circuit, the circuit of the verifying unit in the hierarchical reset unit is first reset, and the enable signal in each mode/function circuit has not been generated yet. Previously, an enable signal for a predetermined or preset mode/function circuit was generated in multiple clock cycles, so that each mode/function circuit was in a reset state, and then, only when the circuit of the verification unit verified each mode/function After the enable signal of the circuit, the reset unit of the hierarchical reset unit controls each mode/function circuit to enter an open or closed state from the reset state, so that each mode/function circuit is controlled by the verification unit of the hierarchical reset unit according to the mode. / Function characteristic value control, the circuit of each mode/function is turned on or off by the reset unit.
如图 2所示的, 包含有非易失性存储器的集成电路的分级复位过程中, 在系统上电 / 复位阶段之后, 进入集成电路芯片上电 /复位阶段, 然后是特征值验证阶段, 之后才会进入 集成电路芯片的模式 /功能打开或者关闭状态。  As shown in FIG. 2, during the hierarchical reset process of the integrated circuit including the nonvolatile memory, after the system power-on/reset phase, the IC chip power-on/reset phase is entered, followed by the feature value verification phase, and then The mode/function of the integrated circuit chip is turned on or off.
所述的非易失性存储器 (Non Volatile Memory, NVM), 包括但不限于闪存(Flash ROM) 或者电可擦除可编程只读存储器(EEPR0M), 或者铁电存储器(FeRAM), 或者磁性随机存储 器 (MR颜), 或者相变存储器(0UM) 等。  The non-volatile memory (NVM) includes, but is not limited to, a flash ROM or an electrically erasable programmable read only memory (EEPROM), or a ferroelectric memory (FeRAM), or a magnetic random Memory (MR), or phase change memory (0UM).
闪存 (Plash ROM)是一种电擦除非易失型存储器, 由浮栅型场效应管构成, 写入时, 利用热电子注入, 使浮栅带电; 擦除时, 则利用高压下的隧道效应, 使浮栅失去电子。 如 Intel公司生产的基于 NOR结构的 Strata Flash 28F320J3型闪存; 韩国 Samsung公司所 生产的基于 NAND结构的 K9S5608 型 SMC卡 (外形封装成卡片形式的闪存卡)。  A flash memory (Plash ROM) is an electrically erasing nonvolatile memory composed of a floating gate field effect transistor. When writing, hot floating electrons are used to charge the floating gate. When erasing, the tunneling effect under high voltage is utilized. , the floating gate loses electrons. For example, the Strata Flash 28F320J3 flash memory based on the NOR structure produced by Intel Corporation; the K9S5608 SMC card based on the NAND structure produced by Samsung Corporation of South Korea (the flash memory card packaged in the form of a card).
本发明实施例以包含非易失性存储器如闪存(Flash ROM) 的集成电路而对本发明的对 集成电路关闭内部功能的装置和方法进行描述, 但应当说明的是, 本发明实施例也可以适 用于其他现有的非易失性存储器, 以及包含所述非易失性存储器的集成电路。 本发明实施 例中的描述只是为了更好地理解本发明, 而不是对本发明的限制。 Embodiments of the present invention describe an apparatus and method for shutting down internal functions of an integrated circuit of the present invention in an integrated circuit including a nonvolatile memory such as a flash memory, but it should be noted that the embodiment of the present invention is also applicable. Other existing non-volatile memories, and integrated circuits including the non-volatile memories. Implementation of the invention The descriptions of the examples are for the purpose of better understanding of the invention and are not intended to limit the invention.
集成电路芯片的每次上电都首先利用分级复位单元中的验证单元进行模式 /功能特征 值验证, 以此决定打开或关闭哪些模式 /功能, 集成电路芯片才能打开或者关闭模式 /功能 的电路, 也就是说通过设置单元存储的特征值可将对应的模式 /功能的电路打幵或者关闭, 或者永久关闭。  Each power-on of the integrated circuit chip first uses the verification unit in the hierarchical reset unit to perform mode/function feature value verification, thereby determining which modes/functions to turn on or off, and the integrated circuit chip can turn on/off the mode/function circuit. That is to say, by setting the characteristic value stored in the unit, the corresponding mode/function circuit can be turned on or off, or permanently turned off.
本发明所述的模式, 可以看作是一类功能的集合, 包括测试模式和 /或工作模式。 其可 以理解为更上层的功能, 其下还有多种功能。 例如, 测试模式往往包括扫描测试、 存储器 测试、边界扫描测试和 IP测试等多种功能, 关闭了该模式也就意味着其下的所有功能也就 被同时关闭, 因此, 本发明所指的模式和功能在本质上是相同的。  The mode described in the present invention can be regarded as a collection of functions, including test mode and/or work mode. It can be understood as a function of the upper layer, and there are many functions under it. For example, the test mode often includes various functions such as scan test, memory test, boundary scan test, and IP test. When the mode is turned off, all the functions under it are also turned off at the same time. Therefore, the mode referred to in the present invention And the function is essentially the same.
所述的功能包括但不限于 RSA加密功能、 ECC加密功能、 非易失性存储器编程功能、 Scan扫描测试功能、 Boundary-Scan边界扫描测试功能、 BIST内建自测试功能。  The functions include, but are not limited to, RSA encryption function, ECC encryption function, non-volatile memory programming function, Scan scan test function, Boundary-Scan boundary scan test function, BIST built-in self test function.
更佳地, 所述的设置单元, 包括模式特征值设置子单元, 功能特征值设置子单元, 其 中- 所述模式特征值设置子单元, 用于存储各个模式特征值。  More preferably, the setting unit includes a mode feature value setting subunit, a function feature value setting subunit, wherein the mode feature value setting subunit is configured to store each mode feature value.
所述功能特征值设置子单元, 用于存储各个功能特征值。  The function feature value setting subunit is configured to store each function feature value.
所述的验证单元, 包括模式特征值验证单元和功能特征值验证单元, 其中: 所述的模式特征值验证单元, 用于在集成电路上电 /复位过程中, 从模式特征值设置子 单元中读取模式特征值, 然后进行验证, 并在验证通过后转换到工作模式或者测试模式, 并在模式特征值设置子单元中重新写入新的模式特征值。  The verification unit includes a mode feature value verification unit and a function feature value verification unit, wherein: the mode feature value verification unit is configured to be used in the mode feature value setting subunit during the power-on/reset process of the integrated circuit The mode feature value is read, then verified, and converted to the working mode or test mode after the verification is passed, and the new mode feature value is rewritten in the mode feature value setting subunit.
所述的功能特征值验证单元, 用于在集成电路上电 /复位过程中, 从功能特征值设置子 单元中读取功能特征值, 然后进行验证, 并在验证通过后对该功能相应的地址空间进行写 保护, 永久性禁止在该功能相应的电路上进行写操作。  The function feature value verification unit is configured to read a function feature value from the function feature value setting sub-unit during the power-on/reset process of the integrated circuit, and then perform verification, and the corresponding address of the function after the verification is passed The space is write-protected and the write operation on the corresponding circuit of the function is permanently prohibited.
较佳地, 当功能特征值设置单元中的所述功能特征值都通过验证, 全部相应的功能的 电路已经进行写保护, 已经永久性禁止在相应的电路上进行功能写入操作, 则所述的功能 对应的模式特征值置禁止写入, 不再进行特征值验证, 使得该集成电路永远不能再进行该 模式进行切换和功能写入。 如图 3所示, 下面进一步详细描述本发明的对集成电路关闭内部功能的方法: 本发明实施例的对集成电路关闭内部功能的方法的主要操作步骤包括- 歩骤 S100,向集成电路的非易失性存储器里的特定位置中写入多种模式 /功能的电路分 别对应的多个预先设置的模式 /功能特征值,并将其存储在集成电路的非易失性存储器的特 定位置中; Preferably, when the function feature values in the function feature value setting unit are verified, and the circuits of all the corresponding functions have been write-protected, and the function writing operation on the corresponding circuit has been permanently prohibited, the The function characteristic value corresponding to the function is prohibited from writing, and the feature value verification is no longer performed, so that the integrated circuit can never perform the mode switching and function writing again. As shown in FIG. 3, the method for turning off the internal function of the integrated circuit of the present invention is described in further detail below: The main operational steps of the method for turning off the internal function of the integrated circuit in the embodiment of the present invention include: Step S100, to the non-integrated circuit Circuits that write multiple modes/functions in specific locations in volatile memory Corresponding to a plurality of preset mode/function feature values and storing them in a specific location of the non-volatile memory of the integrated circuit;
多个预先设置的模式 /功能特征值, 较佳地, 该预先设置的模式 /功能特征值不是非易 失性存储器测试用数值,如 00000000、 11111111、01010101、 10101010、00110011、 11001100、 01110111、 10001000、 00001111、 11110000是存储器测试常用测试数据, 选择除此之外的 其他的数据。  a plurality of preset mode/function feature values, preferably, the preset mode/function feature values are not values for non-volatile memory test, such as 00000000, 11111111, 01010101, 10101010, 00110011, 11001100, 01110111, 10001000 , 00001111, 11110000 are common test data for memory test, and select other data.
如果在存储器测试结束之前将所有存储器空间都擦除一遍, 对特征值的设置只要不是 所有数据位都是髙就可以了。 因为通常存储器空间擦除后, 数据缺省为高。 如果在存储器 测试结束之前不能保证所有存储器空间都擦除一遍,就要要求保证该模式 /功能特征值不是 存储器测试时可能用到的数据。 否则, 有可能出现本来不期望关闭的功能也被不小心永远 关闭的情况, 因为永远无法再对非易失性存储器进行写操作。 尽量避免选用存储器测试的 常用数据, 避免给非易失性存储器测试带来不必要的麻烦; 同时使得如果非要选择存储器 测试的常用数据, 至少要保证测试完毕后非易失性存储器中用来关闭非易失性存储器编程 功能的特征值区域的值不是预先设置的特征值。  If all memory spaces are erased before the end of the memory test, the feature values are set as long as not all data bits are 髙. Because the memory is usually erased by default, the data is high by default. If it is not possible to ensure that all memory spaces are erased before the end of the memory test, it is required to ensure that the mode/feature feature value is not the data that may be used during memory testing. Otherwise, there may be cases where the function that was not expected to be turned off is also accidentally turned off forever, because the non-volatile memory can never be written again. Try to avoid using the common data of the memory test to avoid unnecessary troubles for the non-volatile memory test. At the same time, if you want to select the common data of the memory test, at least ensure that the non-volatile memory is used after the test is completed. The value of the feature value area in which the nonvolatile memory programming function is turned off is not a preset feature value.
较佳地,在集成电路芯片在芯片设计阶段, 向非易失性存储器里配置多种模式 /功能的 电路分别对应的模式 /功能特征值。  Preferably, the integrated circuit chip is configured with a mode/function characteristic value corresponding to each of the plurality of mode/function circuits in the non-volatile memory at the chip design stage.
本发明实施例所述的模式 /功能特征值是在芯片设计阶段就设置好的, 一旦模式 /功能 特征值存放于非易失性存储器里, 即使集成电路芯片下电, 数据也不会丢失。  The mode/function feature values described in the embodiments of the present invention are set at the chip design stage. Once the mode/function feature values are stored in the non-volatile memory, the data is not lost even if the integrated circuit chip is powered off.
步骤 S200, 在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位过程中, 逐个验证集成电路的非易失性存储器中的模式 /功能特征值,根据非易失性存储器中对模式 /功能特征值的验证结果确定相应的操作。  Step S200, the circuit in the internal mode/function of the integrated circuit adopts a hierarchical reset, and in the hierarchical reset process, the mode/function feature value in the non-volatile memory of the integrated circuit is verified one by one according to the mode in the non-volatile memory. The verification result of the /feature feature value determines the corresponding operation.
集成电路芯片的每次上电 /复位都首先进行模式 /功能特征值验证, 以此决定打开或关 闭哪些模式 /功能的电路, 集成电路芯片才能打开或者关闭相应的模式 /功能的电路, 也就 是说通过存储的模式 /功能特征值可将对应的功能 /模式的电路打开 /关闭, 或者永久关闭。  Each power-on/reset of an integrated circuit chip first performs mode/function feature value verification to determine which mode/function circuits are turned on or off, and the integrated circuit chip can turn on or off the corresponding mode/function circuit, that is, It is said that the corresponding function/mode circuit can be turned on/off or permanently turned off by the stored mode/function feature value.
在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 /功能电路的使能信号 还没有产生之前,在多个时钟周期内产生既定或者预先设定的各个模式 /功能的电路的使能 信号, 使各个模式 /功能的电路处于复位状态, 从非易失性存储器中读取一个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号;  During the power-on/reset of the integrated circuit, during the hierarchical reset of the integrated circuit, the circuit of each mode/function that is established or preset is generated in multiple clock cycles before the enable signal of each mode/function circuit has not been generated. The enable signal is such that each mode/function circuit is in a reset state, one or more mode/function feature values are read from the non-volatile memory, the levels are verified one by one, and the enable signals of the circuits of the respective modes/functions are verified;
在集成电路分级复位中,逐个验证所存储的模式 /功能特征值, 并根据特征值控制集成 电路的内部模式 /功能的电路的打开或者关闭, 实现在上电复位时的不同的模式 /功能的选 择性打开 /关闭, 从而增强了集成电路芯片的安全性, 并且可能针对不同情形, 实现对集成 电路的永久性选择设置。 In the hierarchical reset of the integrated circuit, the stored mode/function feature values are verified one by one, and the internal mode/function circuit of the integrated circuit is controlled to be turned on or off according to the feature value, thereby realizing different modes/functions at the power-on reset. Choose Selective on/off, thereby enhancing the security of the integrated circuit chip, and possibly enabling permanent selection of integrated circuits for different situations.
在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存 储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的电路打开或者关闭。 作为一种可实施的方式, 步骤 S200包括下列步骤:  In the case of power-on/reset of the internal mode/function of the integrated circuit, a hierarchical reset is used, and the internal mode/function circuit of the control integrated circuit is turned on or off according to the verification result of the stored mode/function characteristic value by the verification unit. As an implementable manner, step S200 includes the following steps:
步骤 S210, 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能的 电路对应的地址数据不是第一功能的特征值, 置该第一功能为有效;  Step S210, in the power-on/reset process, detecting that the address data corresponding to the circuit of the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and setting the first function to be valid;
在上电复位过程中首先在存储第一功能特征值的地址验证非易失性存储器的第一功能 的电路对应的第一功能特征值, 如果是, 则说明该第一功能已经关闭; 否则, 说明该第一 功能可以写入, 则置该第一功能的电路所对应的第一功能特征值有效, 以此使芯片完全复 位结束后打开或者关闭哪种功能。  Determining, in the power-on reset process, a first function feature value corresponding to a circuit of the first function of the non-volatile memory at an address storing the first function feature value, and if yes, indicating that the first function has been turned off; It is stated that the first function can be written, and the first function characteristic value corresponding to the circuit of the first function is valid, so that which function is turned on or off after the chip is completely reset.
步骤 S220, 在所述集成电路芯片上电复位结束后, 相应的第一功能的电路置为有效, 并且第一功能的电路对非易失性存储器中该第一功能特征值的编程写入能力尚未失去, 如 果需要关闭该第一功能的电路, 则向该第一功能的电路对应的地址写入第一功能特征值, 置该第一功能无效;  Step S220, after the power-on reset of the integrated circuit chip is finished, the corresponding first function circuit is asserted, and the first function circuit writes the first functional feature value in the non-volatile memory. If the circuit of the first function needs to be turned off, the first function feature value is written to the address corresponding to the circuit of the first function, and the first function is invalid;
同时,如果第一功能的电路对该非易失性存储器中第二〜第 N功能的功能特征值地址的 编程能力尚未失去, 同吋需要关闭第二 ~第1^功能的电路中的一个或者多个功能, 则将该功 能的电路对应的功能特征值写入, 以关闭该功能的电路。  Meanwhile, if the circuit of the first function has not lost the programming capability of the function value address of the second to Nth functions in the nonvolatile memory, it is necessary to turn off one of the circuits of the second to the first function or For multiple functions, the function feature value corresponding to the circuit of the function is written to turn off the circuit of the function.
步骤 S230, 当所述集成电路芯片再次上电复位时, 检测到集成电路的非易失性存储器 里的第一功能的电路对应的数据不是第一功能特征值, 则第一功能, 就已经关闭, 其功能 为无效, 或者第二 ~第N功能中的一个或者多个功能就已经关闭, 其功能为无效。这样, 该 功能和对应的功能特征值的编程操作就被禁止了。  Step S230, when the integrated circuit chip is powered on and reset again, detecting that the data corresponding to the first function in the non-volatile memory of the integrated circuit is not the first functional characteristic value, the first function is closed. , its function is invalid, or one or more of the second to Nth functions are turned off, and its function is invalid. Thus, the programming operation of this function and the corresponding function feature value is prohibited.
下面以关闭集成电路芯片中的 Function—x功能为例进一步详细本发明的对集成电路 关闭内部功能的方法- 如图 4所示, 对 Function— X功能的关闭设置步骤如下:  The following is a detailed description of the method for turning off the internal function of the integrated circuit of the present invention by taking the function of the Function_x in the integrated circuit chip as an example - as shown in FIG. 4, the steps for setting the function of the Function X function are as follows:
A、 芯片上电复位时, 检测到非易失性存储器地址 Addr— 1 里的数据不是 Data—l , 置 Function— 1一 enable为有效。  A. When the chip is powered on, the non-volatile memory address is detected. The data in Addr-1 is not Data-1. Set Function-1 to enable.
其中, FunctionJ— enable信号既是 FunctionjL功能使能, 又是对非易失性存储器地 址 Addr一 1的编程使能信号。 芯片上电复位结束后, 此时, Function—I功能是有效的, 并且尚未失去对非易失性存 储地址 Addr—l的编程能力, 为关闭该 FunctionJL, 向非易失性存储器地址 Addr—l里写数 据 Data— 1, 置该 mction_l无效。 The FunctionJ_enable signal is both a FunctionjL function enable and a program enable signal for the non-volatile memory address Addr-1. After the chip power-on reset, at this time, the Function-I function is valid, and the programming capability of the non-volatile memory address Addr-1 has not been lost. To close the FunctionJL, the non-volatile memory address Addr-1 Write data Data-1, set the mction_l invalid.
同时, 如果 Function一 1对该非易失性存储器中对 Function_X对应的功能特征值的地 址 Addr_X编程能力尚未失去而无效, 需要关闭 Function一 X, 则在 Addr_X中将 Function— X 对应的功能特征值 Data— X写入, 以关闭该功能的电路。  At the same time, if Function-1 does not invalidate the programming ability of the address Addr_X of the function feature value corresponding to Function_X in the non-volatile memory, and needs to close Function-X, the function characteristic value corresponding to Function_X in Addr_X Data—X writes to turn off the circuit for this function.
B、 当芯片再次上电复位时, 检测到非易失性存储器地址 Addr一 1 里的数据是特征值 Data— 1, 则置 Function_l功能使能信号 Function一 1一 enable为无效, 这样芯片上电复位结 束后芯片的 Function_l功能和对非易失性存储地址 Addr— 1的编程操作就被禁止了。  B. When the chip is powered on again, it is detected that the data in the non-volatile memory address Addr-1 is the characteristic value Data-1, then the Function_l function enable signal Function-1 is disabled, so that the chip is powered on. The Function_l function of the chip and the programming operation of the nonvolatile memory address Addr-1 are disabled after the reset.
同时,检测到非易失性存储器地址 Addr_X里的数据是特征值 Data_X,则置 Function—X 功能使能信号 Function_X— enable为无效,这样芯片上电复位结束后芯片的 Function— X功 能和对非易失性存储地址 Addr—X的编程操作就被禁止了。 At the same time, when the data in the non-volatile memory address Addr_X is detected as the feature value Data_X, the Function-X function enable signal Functio n _X_enset is invalid, so that the function of the chip is after the chip power-on reset. The programming operation of the nonvolatile memory address Addr_X is disabled.
较佳地, 该功能特征值区别于非易失性存储器测试时常用的测试用例数据, 保证该数 据不会在对非易失性存储器测试时用到。 作为另一种可实施的方式, 所述步骤 S200包括下列步骤- 步骤 S210 ' , 在集成电路上电复位过程中, 检测到集成电路的非易失性存储器里模式 特征值存储地址的数据是第一模式特征值, 置该第一模式为有效;  Preferably, the functional feature value is distinguished from test case data commonly used in non-volatile memory testing to ensure that the data is not used in testing non-volatile memory. As another implementation manner, the step S200 includes the following step - step S210', during the power-on reset of the integrated circuit, detecting that the data of the mode feature value storage address in the non-volatile memory of the integrated circuit is the first a mode feature value, wherein the first mode is valid;
步骤 S220' ,在所述集成电路芯片上电复位结束后,相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 贝 II向该 模式特征值存储地址中写入模式特征值;  Step S220', after the power-on reset of the integrated circuit chip is finished, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the non-volatile memory has not yet been Lost, Bay II writes the mode feature value to the mode feature value storage address;
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
步骤 S230' , 当所述集成电路芯片再次上电复位时, 检测到所述非易失性存储器设置 单元中为该相应模式的特征值, 所述集成电路芯片转换到该模式。  Step S230', when the integrated circuit chip is powered on again, detecting a feature value of the corresponding mode in the non-volatile memory setting unit, and the integrated circuit chip switches to the mode.
如图 5所示, 下面以第一模式 Mode一 A到第二模式 Mode— B模式切换为例进一步详细本 发明的对集成电路关闭内部模式的方法- As shown in FIG. 5, the following is a method for switching off the internal mode of the integrated circuit according to the first mode Mode-A to the second mode Mode-B mode switching as an example.
Al、 芯片上电复位时, 检测到非易失性存储器设置单元地址 Addr一 mode里的数据是第 一模式 Mode—A的第一特征值 Data— A,置 ModeJ^enable为有效,芯片上电复位结束后(处 于 Mode一 A模式),向非易失性存储器设置单元地址 Addr_mode里写数据第二模式 Mode— B的 第二特征值 Data—B。 Al, when the chip is powered on, the data in the non-volatile memory setting unit address Addr-mode is detected. The first characteristic value Data_A of a mode Mode-A is set to ModeJ^enable, and after the power-on reset of the chip is finished (in Mode-A mode), the data is written to the non-volatile memory setting unit address Addr_mode. Mode Mode - The second characteristic value of Data B - B.
Bl、 当芯片再次上电复位时, 检测到非易失性存储器地址 Addr_mode里的数据是第二 特征值 Data_B, 芯片就工作在 Mode_B模式了。  Bl. When the chip is powered on again, the non-volatile memory address is detected. The data in Addr_mode is the second eigenvalue Data_B, and the chip operates in Mode_B mode.
所述 Mode一 A和 Mode一 B指的是芯片为适应不同要求的模式,包括测试模式和工作模式。 在上电复位时即对不同的功能做取舍, 关闭或开放, 从而可以适应于不同的环境要求下的 工作要求。  The Mode A and the Mode B refer to the mode in which the chip adapts to different requirements, including the test mode and the working mode. Different functions are traded off, closed or opened during power-on reset, so that they can be adapted to the requirements of different environmental requirements.
需要说明的是, 如果经过验证是既定的模式特征值, 集成电路芯片进入该模式后, 不 必且不能禁止特征值区域的写操作, 否则就无法再次切换模式。  It should be noted that, if the verification is a predetermined mode feature value, after the integrated circuit chip enters the mode, the write operation of the feature value region is not necessarily prohibited, and the mode cannot be switched again.
如果需要关闭模式, 则另外设置一模式开关特征值, 以便关闭该模式切换, 在此种情 况下, 本发明的芯片就可成为固定的各种型号, 以供不同情况下的使用。 作为本发明另一种可实施的方式, 所述步骤 S200包括下列步骤:  If the mode is required to be turned off, a mode switch characteristic value is additionally set to turn off the mode switching. In this case, the chip of the present invention can be fixed in various models for use in different situations. As another implementable manner of the present invention, the step S200 includes the following steps:
步骤 S210 " , 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能 的电路对应的数据不是第一功能的特征值, 置该第一功能为有效;  Step S210", during the power-on/reset process, the data corresponding to the circuit detecting the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and the first function is valid;
步骤 S220 " , 在第一功能有效的情况下, 检测到集成电路的非易失性存储器里模式特 征值存储地址的数据是第一模式特征值, 置该第一模式为有效;  Step S220", when the first function is valid, detecting that the data of the mode feature value storage address in the non-volatile memory of the integrated circuit is the first mode feature value, and setting the first mode to be valid;
步骤 S230 " ,在所述集成电路芯片上电复位结束后,相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 则向该 模式特征值存储地址中写入模式特征值;  Step S230", after the power-on reset of the integrated circuit chip is finished, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the non-volatile memory has not yet been If it is lost, the mode feature value is written into the mode feature value storage address;
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
步骤 S240 " , 在集成电路芯片重新上电复位结束后, 相应的模式的电路置为有效, 该 模式的电路对该模式下的功能的电路相对应的非易失性存储器中该功能特征值的编程写入 能力尚未失去, 如果需要关闭该功能的电路, 则向该功能的电路对应的地址写入功能特征 值, 置该功能无效。  Step S240", after the re-power-on reset of the integrated circuit chip is finished, the corresponding mode circuit is asserted, and the circuit of the mode corresponds to the functional characteristic value in the non-volatile memory corresponding to the function of the mode. The programming write capability has not been lost. If the circuit of the function needs to be turned off, the function feature value is written to the address corresponding to the circuit of the function, and the function is invalid.
同时,如果该模式的电路对该对非易失性存储器中第二 ~第 N功能的功能特征值地址的 编程能力尚未失去, 同时需要关闭第二 ~第1^功能的电路中的一个或者多个功能, 则将该功 能的电路对应的功能特征值写入, 以关闭该功能的电路。 At the same time, if the circuit of the mode pairs the function value address of the second to the Nth function in the non-volatile memory The programming capability has not been lost, and at the same time, one or more functions in the circuit of the second to the first function are required to be turned off, and the function characteristic value corresponding to the circuit of the function is written to turn off the circuit of the function.
作为再一个较佳实施例, 如图 6所示, 以一个芯片的测试模式和工作模式的切换过程, 以及 FLASH— Promgram和 RSA加密算法 (Rivest- Shamir- Adleman encryption) 加密功能 被永久关闭的过程为例详细说明本发明的对集成电路关闭内部功能的装置和方法。  As still another preferred embodiment, as shown in FIG. 6, the switching process of the test mode and the operation mode of one chip, and the process of permanently closing the FLASH-Promgram and the RSA encryption algorithm (Rivest-Shamir-Adleman encryption) are temporarily closed. An apparatus and method for shutting down internal functions of an integrated circuit of the present invention will be described in detail by way of example.
其中:  among them:
System^rst : 系统复位信号或芯片上电复位信号;  System^rst : system reset signal or chip power-on reset signal;
Clk: 系统时钟或片内时钟信号;  Clk: system clock or on-chip clock signal;
DataVal i date— reset: 特征值验证电路复位信号;  DataVal i date — reset: eigenvalue verification circuit reset signal;
Founcti on_rest : 除特征值验证电路外所有功能电路的复位信号;  Founcti on_rest : reset signal of all functional circuits except the eigenvalue verification circuit;
0EN: 非易失性存储器的读信号;  0EN: read signal of non-volatile memory;
DATA— OUT: 从非易失性存储器读出的数据信号;  DATA_OUT: a data signal read from a non-volatile memory;
TEST一 EN: 测试模式使能信号;  TEST-EN: Test mode enable signal;
W0RK—EN: 工作模式使能信号;  W0RK—EN: operating mode enable signal;
RSA_ EN: RSA功能使能信号; RSA_ EN : RSA function enable signal;
ECC_EN : ECC功能使能信号;  ECC_EN : ECC function enable signal;
FLASH—PM—EN: 非易失性存储器编程功能信号;  FLASH—PM—EN: non-volatile memory programming function signal;
TDI和 STROBE: 对非易失性存储器进行编程的输入信号;  TDI and STROBE: input signals for programming non-volatile memory;
ADDR: 对非易失性存储器进行编程时输入的地址;  ADDR: Address entered when programming non-volatile memory;
DATA— IN: 对非易失性存储器进行编程时输入的数据;  DATA— IN: Data input when programming non-volatile memory;
WEN: 对非易失性存储器进行编程时输入的写操作使能信号。  WEN: Write enable signal input when programming non-volatile memory.
第一阶段, 检测 FLASH— Promgram功能有效;  In the first stage, the FLASH-Promgram function is detected;
FLASH— Promgram功能还没有写入特征值,集成电路芯片上电默认情况下, FLASH— PM—EN 是有效的,这个时候可以对闪存(FLASH)进行测试,或者利用闪存进行工作,如数据下载。  FLASH—The Promgram function has not yet written the feature value. By default, the FLASH-PM-EN is valid. By default, the flash memory (FLASH) can be tested or flashed to work, such as data download.
其中, FLASH—PM_EN为非易失性存储器编程功能使能信号。  Among them, FLASH_PM_EN is a non-volatile memory programming function enable signal.
第二阶段, 在 FLASH—Promgram功能有效的情况下, 进入集成电路芯片的测试模式; 通过 FLASH编程电路向模式特征值存储地址里写入模式特征值 8 ' h42, 则使得闪存 ( FLASH)在下一次上电时, 可以进入测试模式, 即当再次上电时, 特征值验证电路首先读 取闪存 (FLASH ) 里的 B 区域中的模式特征值, 这时会将 TEST_EN 信号置为有效, Founction— rests变高, 芯片进入测试 (TEST )模式。 第三阶段, 从测试模式切换到工作模式: In the second stage, when the FLASH-Promgram function is valid, enter the test mode of the integrated circuit chip; write the mode feature value 8 ' h42 to the mode feature value storage address through the FLASH programming circuit, so that the flash memory (FLASH) is next time At power-on, the test mode can be entered. That is, when power is turned on again, the feature value verification circuit first reads the mode feature value in the B area in the flash memory (FLASH), and the TEST_EN signal is asserted, Founction_rests Going high, the chip enters the test (TEST) mode. The third stage, switching from test mode to work mode:
通过 FLASH编程电路向模式特征值存储地址写入模式切换特征值 8' M3, 则使得闪存 在下一次上电时, 可以进入工作模式, 即当再次上电时, 特征值验证电路首先读取闪存 (FLASH)里的各个模式特征值,这时会将 W0RK_EN信号置为有效, Founction— rests变高, 芯片进入工作模式。  The FLASH programming circuit writes the mode switching mode value 8' M3 to the mode feature value storage address, so that the flash memory can enter the working mode at the next power-on, that is, when the power is turned on again, the feature value verification circuit first reads the flash memory ( Each mode feature value in FLASH, the W0RK_EN signal is asserted, Founction_rests goes high, and the chip enters the working mode.
第四阶段, 在工作模式下, 关闭 RSA加密功能:  In the fourth phase, in the working mode, the RSA encryption function is turned off:
当通过 FLASH编程电路向存储 RSA加密功能特征值的地址写入 RSA功能特征值 8' hdl, 则使得闪存(FLASH)在下一次上电时, 关闭 RSA功能, 即当再次上电时, 特征值验证电路 首先读取闪存 (FLASH)里的各个特征值, 控制将 RSA— EN置为无效, 当 Founrtion— rests 变高时, RSA加密功能就被关闭。  When the RSA function feature value 8' hdl is written to the address storing the RSA encryption function feature value through the FLASH programming circuit, the flash memory (FLASH) is turned off at the next power-on, that is, when the power is turned on again, the feature value verification is performed. The circuit first reads the individual eigenvalues in the flash memory (FLASH), the control disables RSA-EN, and when Founrtion-rests goes high, the RSA encryption function is turned off.
第五阶段, 在工作模式下, 关闭 FLASH_Promgram功能。  In the fifth stage, in the working mode, the FLASH_Promgram function is turned off.
在工作模式下,对该 FLASH_Promgram功能的功能特征值地址的编程能力尚未失去, 关 闭 FLASH—Promgram功能时, 则通过 FLASH编程电路向该 FLASH—Promgram功能的功能特征 值地址写入 FLASH—Profflgram功能特征值 8' hd3 , 则使得闪存在下一次上电时, 关闭 FLASH. Promgrara功能, 即当再次上电时, 特征值验证电路首先读取闪存 (FLASH) 里的各 个特征值, 这时会将 FLASH—PM— EN置为无效, Founction_rests变高, FLASH_Promgram功 能被关闭。 In the working mode, the programming ability of the function value address of the FLASH_Pro m gram function has not been lost. When the FLASH-Promgram function is turned off, the FLASH-Profflgram is written to the functional characteristic value address of the FLASH-Promgram function through the FLASH programming circuit. The function characteristic value is 8' hd3 , which causes the flash memory to turn off the FLASH. Promgrara function when the power is turned on next time. That is, when power is turned on again, the feature value verification circuit first reads each feature value in the flash memory (FLASH), and then FLASH—PM—EN is disabled, Founction_rests goes high, and the FLASH_Promgram function is turned off.
较佳地, 如果集成电路芯片中某个模式下的所有功能被关闭, 则设置模式开关特征值, 以便关闭该模式切换, 在此种情况下, 集成电路芯片就可成为固定的各种型号, 以供不同 情况下的使用, 使该集成电路芯片就永远不能再进行模式切换和该模式下的功能开关。  Preferably, if all the functions in a certain mode of the integrated circuit chip are turned off, the mode switch characteristic value is set to turn off the mode switching. In this case, the integrated circuit chip can be fixed in various models. For different situations, the integrated circuit chip can never perform mode switching and function switching in this mode.
因此, 本发明方法通过设置在非易失性存储器中的模式 /功能特征值, 实现了对集成电 路的模式切换以及功能是否有效两种类型的设置, 并且可以结合使用, 灵活设置, 其实现 简单方便。  Therefore, the method of the present invention realizes two types of settings for mode switching of the integrated circuit and whether the function is effective by setting the mode/function characteristic value in the non-volatile memory, and can be combined and used flexibly, which is simple to implement. Convenience.
应当理解的是, 上述针对具体实施例的描述较为详细, 但不能因此而认为是对本发明 专利保护范围的限制, 本发明的专利保护范围应以所附权利要求为准。  It is to be understood that the above description of the specific embodiments is intended to be illustrative, and the scope of the invention is not to be construed as limited.

Claims

权利 要求书 Claim
1、一种对集成电路关闭内部模式 /功能的装置, 包括至少一非易失性存储器, 其特征 在于, 还包括一设置单元,用于设置集成电路中多种功能 /模式的电路分别对应的多个模式 /功能特征值, 并将其存储在非易失性存储器中; What is claimed is: 1. A device for shutting down an internal mode/function of an integrated circuit, comprising at least one non-volatile memory, characterized by further comprising a setting unit for respectively setting circuits of various functions/modes in the integrated circuit respectively Multiple mode/function feature values and stored in non-volatile memory;
一分级复位单元, 用于在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位 过程中, 逐个验证所述设置单元中的模式 /功能特征值, 根据非易失性存储器中对特征值的 验证结果确定相应的操作。  a hierarchical reset unit, the circuit for functioning in the internal mode/function of the integrated circuit adopts a hierarchical reset, and in the hierarchical reset process, the mode/function feature values in the setting unit are verified one by one according to the characteristics in the non-volatile memory The result of the verification of the value determines the corresponding operation.
2、 根据权利要求 1所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述 分级复位单元, 包括验证单元和复位单元, 其中:  2. The apparatus for turning off an internal mode/function of an integrated circuit according to claim 1, wherein the hierarchical reset unit comprises a verification unit and a reset unit, wherein:
所述验证单元, 用于在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 / 功能电路的使能信号还没有产生之前, 在多个时钟周期内产生既定或者预先设定的各个模 式 /功能的电路的使能信号, 使各个模式 /功能的电路处于复位状态, 从设置单元中读取一 个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号; 所述复位单元, 用于在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的 电路打开或者关闭。  The verification unit is configured to generate a predetermined or preset time in a plurality of clock cycles before the power-on/reset of the integrated circuit is performed, and before the enable signal of each mode/function circuit has not been generated. The enable signals of the circuits of each mode/function enable the circuits of each mode/function to be in a reset state, read one or more mode/function feature values from the setting unit, verify the levels one by one, and verify the circuits of the respective modes/functions. The resetting unit is configured to: when the circuit of the integrated circuit internal mode/function is powered on/reset, adopt a hierarchical reset, and according to the verification result of the verification mode on the stored mode/function feature value, the integrated circuit is controlled. The internal mode/function circuit is turned on or off.
3、 根据权利要求 2所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述 设置单元, 包括模式特征值设置子单元, 功能特征值设置子单元, 其中:  3. The apparatus for turning off an internal mode/function of an integrated circuit according to claim 2, wherein the setting unit comprises a mode feature value setting subunit, and a function feature value setting subunit, wherein:
所述模式特征值设置子单元, 用于存储各个模式特征值;  The mode feature value setting subunit is configured to store each mode feature value;
所述功能特征值设置子单元, 用于存储各个功能特征值。  The function feature value setting subunit is configured to store each function feature value.
4、 根据权利要求 2或 3所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述验证单元, 包括模式特征值验证单元和功能特征值验证单元, 其中:  4. The apparatus for turning off an internal mode/function of an integrated circuit according to claim 2 or 3, wherein the verification unit comprises a mode feature value verification unit and a function feature value verification unit, wherein:
所述的模式特征值验证单元, 用于在集成电路上电 /复位过程中, 从模式特征值设置子 单元中读取模式特征值, 然后进行验证, 并在验证通过后转换到工作模式或者测试模式, 并在模式特征值设置子单元中重新写入新的模式特征值;  The mode feature value verification unit is configured to read a mode feature value from a mode feature value setting sub-unit during an power-on/reset process of the integrated circuit, and then perform verification, and convert to a working mode or test after the verification is passed Mode, and rewriting the new mode feature value in the mode feature value setting subunit;
所述的功能特征值验证单元, 用于在集成电路上电 /复位过程中, 从功能特征值设置子 单元中读取功能特征值, 然后进行验证, 并在验证通过后对该功能相应的地址空间进行写 保护, 永久性禁止在该功能相应的电路上进行写操作。  The function feature value verification unit is configured to read a function feature value from the function feature value setting sub-unit during the power-on/reset process of the integrated circuit, and then perform verification, and the corresponding address of the function after the verification is passed The space is write-protected and the write operation on the corresponding circuit of the function is permanently prohibited.
5、 根据权利要求 1至 4任一项所述的对集成电路关闭内部模式 /功能的装置, 其特征 在于,所述多个模式 /功能特征值存储在非易失性存储器的非易失寄存器或者一次可编程区 域。 5. Apparatus for turning off an internal mode/function of an integrated circuit according to any one of claims 1 to 4, characterized in that The plurality of mode/function feature values are stored in a non-volatile register or a one-time programmable area of the non-volatile memory.
6、 根据权利要求 5所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述 的非易失性存储器, 是闪存, 或者电可檫除可编程只读存储器, 或者铁电存储器, 或者磁 性随机存储器, 或者相变存储器中的一种。  6. The apparatus for turning off an internal mode/function of an integrated circuit according to claim 5, wherein said nonvolatile memory is a flash memory, or an electrically erasable programmable read only memory, or a ferroelectric Memory, or magnetic random access memory, or one of phase change memories.
7、 根据权利要求 6所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述 模式为测试模式和 /或工作模式。  7. Apparatus for shutting down an internal mode/function of an integrated circuit according to claim 6 wherein said mode is a test mode and/or an operational mode.
8、 根据权利要求 7所述的对集成电路关闭内部模式 /功能的装置, 其特征在于, 所述 功能为 RSA加密功能、 ECC加密功能、 非易失性存储器编程功能、 Scan扫描测试功能、 Boundary- Scan边界扫描测试功能、 BIST内建自测试功能中的一种或者一种以上的组合。  8. The apparatus for turning off an internal mode/function of an integrated circuit according to claim 7, wherein said function is RSA encryption function, ECC encryption function, non-volatile memory programming function, Scan scan test function, Boundary - One or more combinations of Scan boundary scan test function and BIST built-in self test function.
9、一种集成电路芯片,包括至少一非易失性存储器,其特征在于,还包括一设置单元, 用于设置集成电路中多种功能 /模式的电路分别对应的多个模式 /功能特征值, 并将其存储 在非易失性存储器中;  An integrated circuit chip, comprising at least one non-volatile memory, further comprising a setting unit for setting a plurality of mode/function feature values respectively corresponding to the circuits of the plurality of functions/modes in the integrated circuit And storing it in non-volatile memory;
一分级复位单元, 用于在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位 过程中, 逐个验证所述设置单元中的模式 /功能特征值, 根据非易失性存储器中对特征值的 验证结果确定相应的操作。  a hierarchical reset unit, the circuit for functioning in the internal mode/function of the integrated circuit adopts a hierarchical reset, and in the hierarchical reset process, the mode/function feature values in the setting unit are verified one by one according to the characteristics in the non-volatile memory The result of the verification of the value determines the corresponding operation.
10、 根据权利要求 9所述的集成电路芯片, 其特征在于, 所述分级复位单元, 包括验 证单元和复位单元, 其中- 所述验证单元, 用于在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 / 功能电路的使能信号还没有产生之前, 在多个时钟周期内产生既定或者预先设定的各个模 式 /功能的电路的使能信号, 使各个模式 /功能的电路处于复位状态, 从设置单元中读取一 个或者多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号; 所述复位单元, 用于在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的 电路打开或者关闭。  The integrated circuit chip according to claim 9, wherein the hierarchical reset unit comprises a verification unit and a reset unit, wherein - the verification unit is used for powering on/off the integrated circuit, and classifying the integrated circuit During the reset process, an enable signal of a predetermined or preset mode/function circuit is generated in multiple clock cycles before the enable signal of each mode/function circuit has not been generated, so that each mode/function circuit In the reset state, one or more mode/function feature values are read from the setting unit, and the circuit is verified one by one to verify the enable signals of the circuits of the respective modes/functions; the reset unit is used in the integrated circuit internal mode/function When the circuit is powered on/reset, a hierarchical reset is used, and the circuit for controlling the internal mode/function of the integrated circuit is turned on or off according to the verification result of the verification unit for the stored mode/function characteristic value.
11、 根据权利要求 9或 10所述的集成电路芯片, 其特征在于, 所述多个模式 /功能特 征值存储在非易失性存储器的非易失寄存器或者一次可编程区域。  The integrated circuit chip according to claim 9 or 10, wherein the plurality of mode/function feature values are stored in a nonvolatile register or a one-time programmable area of the nonvolatile memory.
12、 一种对集成电路关闭内部模式 /功能的方法, 其特征在于, 包括以下步骤: 步骤 A, 向集成电路的非易失性存储器里中写入多种模式 /功能的电路分别对应的多个 预先设置的模式 /功能特征值, 并将其存储在集成电路的非易失性存储器中; 步骤 B, 在集成电路内部模式 /功能的电路采用分级复位, 并在分级复位过程中, 逐个 验证集成电路的非易失性存储器中的模式 /功能特征值, 根据非易失性存储器中对模式 /功 能特征值的验证结果确定相应的操作。 12. A method for shutting down an internal mode/function of an integrated circuit, comprising the steps of: Step A: writing a plurality of modes/functions corresponding to the non-volatile memory of the integrated circuit respectively Pre-set mode/function feature values and store them in the non-volatile memory of the integrated circuit; Step B, the circuit of the internal mode/function of the integrated circuit adopts a hierarchical reset, and during the hierarchical reset process, the mode/function characteristic value in the non-volatile memory of the integrated circuit is verified one by one according to the mode in the non-volatile memory. The verification result of the /feature feature value determines the corresponding operation.
13、 根据权利要求 12所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B包括下列步骤- 步骤 B1 , 在集成电路上电 /复位, 集成电路分级复位过程中, 在各个模式 /功能电路的 使能信号还没有产生之前,在多个时钟周期内产生既定或者预先设定的各个模式 /功能的电 路的使能信号, 使各个模式 /功能的电路处于复位状态, 从非易失性存储器中读取一个或者 多个模式 /功能特征值, 分级逐个验证, 验证各个模式 /功能的电路的使能信号;  13. The method of turning off an internal mode/function of an integrated circuit according to claim 12, wherein said step B comprises the following steps - step B1, during power-on/reset of the integrated circuit, and during the hierarchical reset of the integrated circuit, An enable signal of a circuit of a predetermined or preset mode/function is generated in a plurality of clock cycles before the enable signal of each mode/function circuit has not been generated, so that each mode/function circuit is in a reset state. Reading one or more mode/function feature values from the non-volatile memory, verifying the levels one by one, and verifying the enable signals of the circuits of the respective modes/functions;
步骤 B2, 在集成电路内部模式 /功能的电路上电 /复位时, 采用分级复位, 根据验证单 元对所存储的模式 /功能特征值的验证结果, 控制集成电路的内部模式 /功能的电路打开或 者关闭。  Step B2, when the circuit of the integrated circuit internal mode/function is powered on/reset, a hierarchical reset is adopted, and according to the verification result of the verification mode on the stored mode/function feature value, the circuit of the internal mode/function of the control integrated circuit is turned on or shut down.
14、 根据权利要求 12所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B包括下列步骤:  14. The method of turning off an internal mode/function of an integrated circuit according to claim 12, wherein said step B comprises the following steps:
步骤 B10, 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能的电 路对应的地址数据不是第一功能的特征值, 置该第一功能为有效;  Step B10, in the power-on/reset process, detecting that the address data corresponding to the circuit of the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and the first function is valid;
步骤 B20, 在所述集成电路芯片上电复位结束后, 相应的第一功能的电路置为有效, 并且第一功能的电路对非易失性存储器中该第一功能特征值的编程写入能力尚未失去, 如 果需要关闭该第一功能的电路, 则向该第一功能的电路对应的地址写入第一功能特征值, 置该第一功能无效;  Step B20, after the power reset of the integrated circuit chip is completed, the corresponding first function circuit is asserted, and the first function circuit writes the first functional characteristic value in the non-volatile memory. If the circuit of the first function needs to be turned off, the first function feature value is written to the address corresponding to the circuit of the first function, and the first function is invalid;
步骤 B30, 当所述集成电路芯片再次上电复位时, 检测到集成电路的非易失性存储器 里的第一功能的电路对应的数据不是第一功能特征值, 则第一功能, 就巳经关闭, 其功能 为无效。  Step B30, when the integrated circuit chip is powered on and reset again, detecting that the data corresponding to the first function in the non-volatile memory of the integrated circuit is not the first functional characteristic value, the first function is Off, its function is invalid.
15、 根据权利要求 14所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B20还包括下列步骤:  The method of turning off an internal mode/function of an integrated circuit according to claim 14, wherein the step B20 further comprises the following steps:
步骤 B21, 如果第一功能的电路对该非易失性存储器中第二 ~第 N功能的功能特征值地 址的编程能力尚未失去, 同时需要关闭第二 功能的电路中的一个或者多个功能, 则将 该功能的电路对应的功能特征值写入;  Step B21, if the circuit of the first function has not lost the programming capability of the function value address of the second to Nth functions in the non-volatile memory, and needs to turn off one or more functions in the circuit of the second function, Write the function feature value corresponding to the circuit of the function;
所述步骤 B30还包括下列步骤:  The step B30 further includes the following steps:
步骤 B31, 当所述集成电路芯片再次上电复位时, 检测到集成电路的非易失性存储器 里的第二~第 N功能的电路对应的数据不是第二 ~第 N功能特征值,则第二 ~第 N功能中的一 个或者多个功能就已经关闭, 其功能为无效。 Step B31, when the integrated circuit chip is powered on and reset again, detecting a non-volatile memory of the integrated circuit The data corresponding to the second to Nth function circuits is not the second to Nth function characteristic values, and one or more of the second to Nth functions are already turned off, and the function is invalid.
16、 根据权利要求 12所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B包括下列步骤:  16. A method of shutting down an internal mode/function of an integrated circuit according to claim 12, wherein said step B comprises the steps of:
步骤 B100, 在集成电路上电复位过程中, 检测到集成电路的非易失性存储器里模式特 征值存储地址的数据是第一模式特征值, 置该第一模式为有效;  Step B100: During the power-on reset of the integrated circuit, detecting that the data of the mode feature value storage address in the non-volatile memory of the integrated circuit is the first mode feature value, and setting the first mode to be valid;
步骤 B200, 在所述集成电路芯片上电复位结束后, 相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 则向该 模式特征值存储地址中写入模式特征值;  Step B200, after the power reset of the integrated circuit chip ends, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the nonvolatile memory has not been lost. And writing a pattern feature value to the mode feature value storage address;
步骤 B300, 当所述集成电路芯片再次上电复位时, 检测到所述非易失性存储器设置单 元中为该相应模式的特征值, 所述集成电路芯片转换到该模式。  Step B300, when the integrated circuit chip is powered on again, detecting a characteristic value of the corresponding mode in the non-volatile memory setting unit, and the integrated circuit chip switches to the mode.
17、 根据权利要求 16所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B200还包括下列步骤:  The method of turning off an internal mode/function of an integrated circuit according to claim 16, wherein the step B200 further comprises the following steps:
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
18、 根据权利要求 12所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B包括下列步骤:  18. The method of turning off an internal mode/function of an integrated circuit according to claim 12, wherein said step B comprises the following steps:
步骤 B1000, 在上电 /复位过程中, 检测到集成电路的非易失性存储器里的第一功能的 电路对应的数据不是第一功能的特征值, 置该第一功能为有效;  Step B1000, in the power-on/reset process, the data corresponding to the circuit that detects the first function in the non-volatile memory of the integrated circuit is not the feature value of the first function, and the first function is valid;
步骤 B2000, 在第一功能有效的情况下, 检测到集成电路的非易失性存储器里模式特 征值存储地址的数据是第一模式特征值, 置该第一模式为有效;  Step B2000, when the first function is valid, detecting that the data of the mode feature value storage address in the non-volatile memory of the integrated circuit is the first mode feature value, and setting the first mode to be valid;
步骤 B3000, 在所述集成电路芯片上电复位结束后, 相应的第一模式的电路置为有效, 并且第一模式的电路对非易失性存储器中该模式特征值的编程写入能力尚未失去, 则向该 模式特征值存储地址中写入模式特征值;  Step B3000, after the power-on reset of the integrated circuit chip is finished, the corresponding first mode circuit is asserted, and the programming capability of the first mode circuit to the mode feature value in the non-volatile memory has not been lost. And writing a pattern feature value to the mode feature value storage address;
步骤 B4000, 在集成电路芯片重新上电复位结束后, 相应的模式的电路置为有效, 该 模式的电路对该模式下的功能的电路相对应的非易失性存储器中该功能特征值的编程写入 能力尚未失去, 如果需要关闭该功能的电路, 则向该功能的电路对应的地址写入功能特征 值, 置该功能无效。 Step B4000, after the power chip reset is completed, the corresponding mode circuit is enabled, and the circuit of the mode is programmed in the non-volatile memory corresponding to the function circuit of the mode. The write capability has not been lost. If the circuit of the function needs to be turned off, the function feature value is written to the address corresponding to the circuit of the function, and the function is invalid.
19、 根据权利要求 18所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述步骤 B3000还包括下列步骤: The method of turning off an internal mode/function of an integrated circuit according to claim 18, wherein the step B3000 further comprises the following steps:
如果需要转换该第一模式到第二模式, 则向该模式特征值存储地址中写入第二模式特 征值;  If the first mode to the second mode needs to be converted, writing a second mode feature value to the mode feature value storage address;
如果需要保持第一模式不变, 则向该模式特征值存储地址中写入第一模式特征值; 如果需要关闭模式, 则向该模式特征值存储地址中写入模式开关特征值。  If it is necessary to keep the first mode unchanged, the first mode feature value is written into the mode feature value storage address; if the mode is required to be turned off, the mode switch feature value is written into the mode feature value storage address.
20、根据权利要求 12至 19任一项所述的对集成电路关闭内部模式 /功能的方法, 其特 征在于,所述多个预先设置的模式 /功能特征值存储于所述非易失性存储器的非易失寄存器 或者一次可编程区域。。  20. A method of shutting down an internal mode/function of an integrated circuit according to any one of claims 12 to 19, wherein said plurality of pre-set mode/function feature values are stored in said non-volatile memory Nonvolatile registers or one time programmable area. .
21、 根据权利要求 20所述的对集成电路关闭内部模式 /功能的方法, 其特征在于, 所 述的非易失性存储器, 是闪存, 或者电可擦除可编程只读存储器, 或者铁电存储器, 或者 磁性随机存储器, 或者相变存储器中的一种。  21. The method of turning off an internal mode/function of an integrated circuit according to claim 20, wherein said nonvolatile memory is a flash memory, or an electrically erasable programmable read only memory, or a ferroelectric Memory, or magnetic random access memory, or one of phase change memories.
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