WO2007147956A3 - Method and device for monitoring a heat treatment of a microtechnological substrate - Google Patents

Method and device for monitoring a heat treatment of a microtechnological substrate Download PDF

Info

Publication number
WO2007147956A3
WO2007147956A3 PCT/FR2007/000961 FR2007000961W WO2007147956A3 WO 2007147956 A3 WO2007147956 A3 WO 2007147956A3 FR 2007000961 W FR2007000961 W FR 2007000961W WO 2007147956 A3 WO2007147956 A3 WO 2007147956A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
monitoring
heat treatment
treated
microtechnological
Prior art date
Application number
PCT/FR2007/000961
Other languages
French (fr)
Other versions
WO2007147956A2 (en
Inventor
Loic Sanchez
Original Assignee
Commissariat Energie Atomique
Loic Sanchez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Loic Sanchez filed Critical Commissariat Energie Atomique
Priority to US12/305,822 priority Critical patent/US7846749B2/en
Priority to DE602007011261T priority patent/DE602007011261D1/en
Priority to AT07788866T priority patent/ATE492030T1/en
Priority to EP07788866A priority patent/EP2030231B1/en
Priority to JP2009515907A priority patent/JP5263789B2/en
Publication of WO2007147956A2 publication Critical patent/WO2007147956A2/en
Publication of WO2007147956A3 publication Critical patent/WO2007147956A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of monitoring a heat treatment of a microtechnological substrate comprises the following steps: placement of this substrate (100) to be treated in a heating zone (13); application of a heat treatment to said substrate to be treated, under predetermined temperature conditions, while monitoring (20) the change over the course of time in the vibratory state of the substrate to be treated; and detection of a fracture in the substrate to be treated by recognizing, in the change in the vibratory state over the course of time, a peak characteristic of a fracture.
PCT/FR2007/000961 2006-06-22 2007-06-11 Method and device for monitoring a heat treatment of a microtechnological substrate WO2007147956A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/305,822 US7846749B2 (en) 2006-06-22 2007-06-11 Method and device for monitoring a heat treatment of a microtechnological substrate
DE602007011261T DE602007011261D1 (en) 2006-06-22 2007-06-11 METHOD AND DEVICE FOR MONITORING HEAT TREATMENT OF A MICROTECHNOLOGICAL SUBSTRATE
AT07788866T ATE492030T1 (en) 2006-06-22 2007-06-11 METHOD AND DEVICE FOR MONITORING HEAT TREATMENT OF A MICROTECHNOLOGICAL SUBSTRATE
EP07788866A EP2030231B1 (en) 2006-06-22 2007-06-11 Method and device for monitoring a heat treatment of a microtechnological substrate
JP2009515907A JP5263789B2 (en) 2006-06-22 2007-06-11 Method and apparatus for monitoring heat treatment of microtechnology substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0605620A FR2902926B1 (en) 2006-06-22 2006-06-22 METHOD AND DEVICE FOR MONITORING THERMAL PROCESSING OF A MICROTECHNOLOGICAL SUBSTRATE
FR0605620 2006-06-22

Publications (2)

Publication Number Publication Date
WO2007147956A2 WO2007147956A2 (en) 2007-12-27
WO2007147956A3 true WO2007147956A3 (en) 2008-05-02

Family

ID=37654945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2007/000961 WO2007147956A2 (en) 2006-06-22 2007-06-11 Method and device for monitoring a heat treatment of a microtechnological substrate

Country Status (7)

Country Link
US (1) US7846749B2 (en)
EP (1) EP2030231B1 (en)
JP (1) JP5263789B2 (en)
AT (1) ATE492030T1 (en)
DE (1) DE602007011261D1 (en)
FR (1) FR2902926B1 (en)
WO (1) WO2007147956A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123691A (en) * 2008-11-18 2010-06-03 Nikon Corp Method and device for manufacturing wafer and semiconductor device
JP5386973B2 (en) * 2008-12-24 2014-01-15 株式会社ニコン Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method
FR3079658B1 (en) * 2018-03-28 2021-12-17 Soitec Silicon On Insulator METHOD OF DETECTION OF THE FRACTURE OF A FRAGILIZED SUBSTRATE BY IMPLANTATION OF ATOMIC SPECIES
FR3088684B1 (en) * 2018-11-21 2023-07-28 Thermodyn BALANCING AND SEALING PISTON, COOLING CIRCUIT AND ASSOCIATED METHOD

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material
EP0938129A1 (en) * 1998-02-18 1999-08-25 Canon Kabushiki Kaisha Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
EP1014452A1 (en) * 1998-02-25 2000-06-28 Seiko Epson Corporation Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display
US6387829B1 (en) * 1999-06-18 2002-05-14 Silicon Wafer Technologies, Inc. Separation process for silicon-on-insulator wafer fabrication

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916439A (en) * 1987-01-05 1990-04-10 Eac Technologies Corp. Remote display arrangement for appliances
FR2681472B1 (en) 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
US5336998A (en) * 1992-06-22 1994-08-09 United States Pipe And Foundry Company Sensor for detecting faults in a magnetized ferrous object using hall effect elements
JPH0786365A (en) * 1993-09-20 1995-03-31 Fujitsu Ltd Method and device for evaluating stage loading
JP2000121615A (en) * 1998-10-14 2000-04-28 Sharp Corp Manufacture of electronic component and its manufacturing device
JP4379943B2 (en) * 1999-04-07 2009-12-09 株式会社デンソー Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus
GB0019434D0 (en) * 2000-08-09 2000-09-27 Rolls Royce Plc A device and method for fatigue testing of materials
JP2002261146A (en) * 2001-03-02 2002-09-13 Hitachi Ltd Manufacturing method of semiconductor integrated circuit device and semiconductor manufacturing device
JP2003086564A (en) * 2001-09-14 2003-03-20 Mitsubishi Electric Corp Centrifugal drier, semiconductor device manufacturing method and semiconductor manufacturing apparatus
JP2004179566A (en) * 2002-11-29 2004-06-24 Nec Kansai Ltd Vertical heat treatment apparatus and method of detecting abnormal wafer in that apparatus
JP4136832B2 (en) * 2003-07-15 2008-08-20 キヤノン株式会社 Inspection method and inspection apparatus for semiconductor laser diode chip
JP2006064464A (en) * 2004-08-25 2006-03-09 Sharp Corp Method and apparatus for detecting crack of substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0938129A1 (en) * 1998-02-18 1999-08-25 Canon Kabushiki Kaisha Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
EP1014452A1 (en) * 1998-02-25 2000-06-28 Seiko Epson Corporation Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material
US6387829B1 (en) * 1999-06-18 2002-05-14 Silicon Wafer Technologies, Inc. Separation process for silicon-on-insulator wafer fabrication

Also Published As

Publication number Publication date
ATE492030T1 (en) 2011-01-15
DE602007011261D1 (en) 2011-01-27
JP5263789B2 (en) 2013-08-14
FR2902926B1 (en) 2008-10-24
US20100015733A1 (en) 2010-01-21
WO2007147956A2 (en) 2007-12-27
FR2902926A1 (en) 2007-12-28
EP2030231A2 (en) 2009-03-04
JP2009541981A (en) 2009-11-26
US7846749B2 (en) 2010-12-07
EP2030231B1 (en) 2010-12-15

Similar Documents

Publication Publication Date Title
EP1850372A4 (en) Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program
WO2006015128A3 (en) System and method for providing a tempered fluid
EP2081100A4 (en) Adjusting device for brain wave identification method, adjusting method and computer program
TWI346357B (en) Apparatus and method for treating substrate, and injection head used in the apparatus
TWI348342B (en) Method of setting reference value for examining substrate, and device and program using the same
WO2008074023A3 (en) Systems and methods for multiplex analysis of pcr in real time
WO2004105861A3 (en) Method for treating skin and underlying tissue
HK1094255A1 (en) Method, device and program product for application authorization
EP1806303A4 (en) Carrying system, substrate treating device, and carrying method
EP1785716A4 (en) Fatigue crack growth curve estimation method, estimation program, and estimation device
TWI367679B (en) Temperature setting method for heat treatment plate, temperature setting program, computer-readable recording medium capable of storing program, and temperature setting device for heat treatment plate
WO2008123288A1 (en) Trap apparatus, exhaust system, and treating system using the same
EP2022594A4 (en) Device by cold junction, process for manufacturing device, and cold junction apparatus
WO2009017919A3 (en) Method of adjusting temperatures of products to desired product temperatures
EP1987298A4 (en) Apparatus and method for heating and/or cooling.
WO2006127970A3 (en) Electrothermal intervertebral disc treatment
AU2003286086A1 (en) Method and device for the generation of cold and heat by magneto-calorific effect
GB2423158B (en) Method and apparatus for improving steam temperature control
AU2003211416A1 (en) Device and method for heat treatment
TW200505599A (en) Device and method for wet treating disc-like substrates
EP1909083A4 (en) Temperature measuring device, thermal treatment device using the same, temperature measuring method
WO2008112875A3 (en) Internal fixation devices
WO2007147956A3 (en) Method and device for monitoring a heat treatment of a microtechnological substrate
SG146523A1 (en) Systems and methods for providing localized heat treatment of gas turbine components
WO2007027663A3 (en) Method and apparatus for evaporative cooling within microfluidic systems

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2007788866

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12305822

Country of ref document: US

Ref document number: 2009515907

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU