WO2007061216A1 - Method for bonding between electrical devices using ultrasonic vibration - Google Patents

Method for bonding between electrical devices using ultrasonic vibration Download PDF

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Publication number
WO2007061216A1
WO2007061216A1 PCT/KR2006/004912 KR2006004912W WO2007061216A1 WO 2007061216 A1 WO2007061216 A1 WO 2007061216A1 KR 2006004912 W KR2006004912 W KR 2006004912W WO 2007061216 A1 WO2007061216 A1 WO 2007061216A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding
electrical devices
resin
substrate
bump
Prior art date
Application number
PCT/KR2006/004912
Other languages
French (fr)
Inventor
Kyung-Wook Paik
Myung-Jin Yim
Hyoung-Joon Kim
Ki-Won Lee
Original Assignee
Korea Advanced Institute Of Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Advanced Institute Of Science And Technology filed Critical Korea Advanced Institute Of Science And Technology
Priority to DE112006003181T priority Critical patent/DE112006003181T5/en
Priority to JP2008542234A priority patent/JP2009517861A/en
Priority to CN2006800438289A priority patent/CN101322233B/en
Publication of WO2007061216A1 publication Critical patent/WO2007061216A1/en

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Definitions

  • the present invention relates to a method for bonding between electrical devices, and more specifically, to a method for bonding between electrical devices capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing of adhesives when bonding between electrical devices, and lowering process pressure in the case of thermo-compression bonding process.
  • flip chip bonding technologies have been developed using adhesives which have advantages of low cost, ultra fine- pitch capability, lead-free process, eco-friendly fluxless process, and low temperature process compared with that using general solder flip chips.
  • Adhesives as the interconnect materials for semiconductor packages mainly includes isotropic conductive adhesive (ICA), anisotropic conductive adhesive (ACA), non-conductive adhesive (NCA), etc.
  • ICA isotropic conductive adhesive
  • ACA anisotropic conductive adhesive
  • NCA non-conductive adhesive
  • adhesives are composite materials consisting of conductive metal particles and polymer resin having insulating properties and the adhesion, and are transited to the ICA from the NCA or the ACA in accordance with the content of the conductive particles.
  • percolation threshold the content value of the conductive particles when an electrical transition is generated is referred to as percolation threshold.
  • an adhesive not having the conductive particles is the NCA, and an adhesive having the conductive particles smaller than the percolation threshold value is the ACA. Also, an adhesive having the conductive particles higher than that is the ICA whose material itself has conducting properties.
  • the purpose, function and application as the interconnect materials for the semiconductor package may be various in terms of the characteristics thereof.
  • FIG. 1 An application example of the isotropic conductive adhesive (ICA) as the interconnect materials for the non-solder flip chip package is shown in FlG. 1.
  • the ICA isotropic conductive adhesive
  • the alignment of the non-solder bumps and substrate electrodes is performed.
  • heat is applied to the ICA to cure it so that electrical interconnections between the non-solder bumps and the substrate electrodes are made.
  • heating is performed at approximately 180°C for 10 to 30 minutes. Then, the underfill process between the chip and the substrate is performed to improve reliability of the flip chip package.
  • An anisotropic conductive film is a polymer film having electrically anisotropic properties and adhesion properties.
  • ACF has electrically conducting properties in a film thickness direction and insulating properties in a surface direction, and basically consists of conductive particles such as nickel, gold/polymer, silver, etc. and insulating resins having thermosetting property or thermoplasticity. Electrical interconnections are made between upper electrodes and lower electrodes with the conductive particles. These conductive particles are dispersed in the ACF by simultaneously being put under heat and pressure between a chip or a flexible circuit substrate having a chip mounted thereon and a glass substrate or a rigid substrate(Fig.2).
  • the curing of the insulating resin is generated by the applied heat to generate greater adhesion strength.
  • the ACF using thermosetting epoxy resin or acrylic-based resin having high speed curable properties has been commercialized.
  • the ACA may be divided into a film form (Anisotropic Conductive Film, ACF) and a paste form (Anisotropic Conductive Paste, ACP). Recently, adhesives in a paste form have been developed in order to simplify the bonding process and the adhesive manufacture process.
  • FIG. 3 shows a flip chip bonding process using a NCF or the NCP as an interconnect material, he process, first applies the NCF or the NCP around substrate electrodes and aligns it with a chip in which non-solder bumps, especially gold stud bumps are formed, and then hardens the NCA by the applied heat while directly contacting the non-solder bumps with the substrate electrodes by thermo-compression bonding process.
  • the interconnect materials such as the ICA, ACA (ACF, ACP), NCA (NCF, NCP), etc. have been used for mounting of a flat panel display module such as an LCD, a PDP, an OLED, etc., a surface mounting of electrical devices, and a semiconductor flip chip bonding. Further, the interconnect materials have already widely been used in an out lead bonding (OLB) process, a PCB process, a chip-on-glass (COG) process, and a chip-on-film (COF) process in a flat panel display module mounting field and have expanded their market into a non-solder flip chip bonding process and a surface devices mounting technology.
  • OLB out lead bonding
  • COG chip-on-glass
  • COF chip-on-film
  • the ICA is material that can replace an existing solder used in bonding in order to assemble electrical or electronic devices or circuit wirings. Its application fields are similar to solder bonding fields. That is, it can be used for assembling the surface mounting devices that require solder reflow or bonding the flip chip using a solder and can achieve the bonding by thermosetting the ICA at temperature lower than that of the solder reflow process. However, there is a weak point in this case that a process temperature is high and curing time is long.
  • ACA In the case of the ACA, it has been used in mounting of a display module.
  • An ACF is the most widely used for an OLB bonding used when bonding a flexible substrate to a glass substrate and a PCB bonding used when bonding a flexible substrate to a PCB substrate. It has various kinds of conductive particles in accordance with application fields and requires a low temperature rapid curing type where bonding temperature is getting lower while bonding time is getting faster.
  • the non- solder bump used in the non-solder flip chip bonding process there are a gold stud bump, a gold plating bump, an electroless nickel bump, and a copper bump, etc.
  • the flip chip bonding process since the flip chip bonding by the reflow cannot be performed due to high melting point, the flip chip bonding process has been performed by the thermo- compression bonding process using the ACF.
  • the present invention has been proposed to overcome the said problems of the prior art. It is an object of the present invention to remove the said problems of the prior art, and in particular, to provide a method for bonding between electrical devices capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a step of curing of adhesives when bonding between electrical devices, and lowering process pressure in the case of thermo-compression bonding process.
  • the present invention is to provide a method for bonding between electrical devices including the steps of: aligning electrodes on a bonding area of an upper electrical device and a lower electrical device to be bonded; and curing of adhesives by applying ultrasonic energy to the adhesive between the upper electrical device and the lower electrical device and thus heating the adhesive itself.
  • the present invention is capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing adhesives when bonding between electrical devices.
  • the present invention has an effect of lowering process pressure in the case of thermo-compression bonding process.
  • the bonding process by the present invention is capable of improving yield and productivity and providing the bonding process of excellent adhesive strength and reliability.
  • FlG. 1 shows a flip chip bonding process using a conventional isotropic conductive adhesive
  • FlG. 2 shows a flip chip bonding process using a conventional anisotropic conductive adhesive
  • FlG. 3 shows a flip chip bonding process using a conventional non-conductive adhesive
  • FlG. 4 shows a flip chip bonding process using isotropic conductive adhesive according to the present invention (in case of using a bump as an intermediary for bonding)
  • FlG. 1 shows a flip chip bonding process using a conventional isotropic conductive adhesive
  • FlG. 2 shows a flip chip bonding process using a conventional anisotropic conductive adhesive
  • FlG. 3 shows a flip chip bonding process using a conventional non-conductive adhesive
  • FlG. 4 shows a flip chip bonding process using isotropic conductive adhesive according to the present invention (in case of using a bump as an intermediary for bonding)
  • FIG. 5 shows a flip chip bonding process using isotropic conductive adhesive according to the present invention (in case of not using a bump as an intermediary for bonding);
  • FlG. 6 shows a flip chip bonding process using anisotropic conductive adhesive according to the present invention;
  • FlG. 7 shows temperature change of adhesive according to time in the case of processing anisotropic conductive adhesive with ultrasonic energy.
  • FlG. 8 shows a flip chip bonding process using non-conductive adhesive according to the present invention;
  • FlG. 9 shows flexible-rigid substrates bonding process using anisotropic conductive adhesive according to the present invention;
  • the electrical devices to be boned mean the devices used in electrical products such as a semiconductor chip or a substrate, etc.
  • the bonding between electrical devices mean the electrical connection between a semiconductor chip and a substrate, between a semiconductor chip and a semiconductor chip, or between a substrate and a substrate.
  • a kind of such a semiconductor chip is not specially limited, and for example, a display driving circuit IC, an image sensor IC, a memory IC, a non-memory IC, an ultra high frequency or RF IC, a semiconductor IC having a silicon as main component and a compound semiconductor IC may be included.
  • the semiconductor chip may not have a non-solder bump in the electrodes on the bonding area (or an input/output pad) or may have a kind of bump selected from, for example, a gold stud bump, a copper stud bump, a gold-plating bump, a copper plating bump, an electroless nickel/gold bump and an electroless nickel/copper/gold bump, as a metal stud bump or a metal plating bump.
  • the substrates may be flexible substrates or rigid substrates.
  • One of these substrates may form an electrical connection with a semiconductor chip, or may form an electrical connection with the other substrates and then include an electrical connection between the flexible substrates, between the rigid substrates, or between the flexible substrates and the rigid substrates.
  • the flexible substrates mean the substrates with flexibility such as forming metal lines on a polyimide substrate, for example.
  • the rigid substrates may be substrates of epoxy/glass, ceramic, glass and silicon semiconductor.
  • the adhesive may be a conductive adhesive or a non-conductive adhesive, and the conductive adhesive may again be ICA or ACA.
  • the ICA includes conductive particles.
  • the usable conductive particles are not specially limited and for example, one selected from a group consisting of silver, copper, gold, carbon, nickel, palladium and low melting point solder powder, or combinations thereof may be included.
  • the ICA using polymer resin as main component can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin.
  • the ACA includes the form of an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP).
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • the adhesive is a film type
  • an adhesive layer can be applied on the substrate by a method that pre-compresses a surface having adhesion on the substrate in 5kgf/cm at about 80°C and then removes a separation paper film.
  • the adhesive is a paste type, it is possible to apply a constant amount of adhesive in a desired shape by using a spraying equipment or a screen printer.
  • These adhesives include conductive particles.
  • the usable conductive particles are not specially limited and for example, one selected from a group consisting of gold coated polymer particles, gold coated nickel particles, gold coated copper particles, low melting point solder layer coated copper particles, and low melting point solder particles, or combinations thereof may be included.
  • the ACA may further include non-conductive particles smaller in size than conductive particles.
  • non-conductive particles silica of ID or less, alumina, beryllia, silicon carbide, diamond, boronitride, etc. may be included.
  • the thermal expansion coefficient of adhesive can be lowered by adding the non- conductive particles as described above.
  • the ACA using polymer resin as main component can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin, for example.
  • the NCA includes the forms of a non-conductive film (NCF) or a non-conductive paste (NCP).
  • NCF non-conductive film
  • NCP non-conductive paste
  • an adhesive layer can be applied on the substrate by a method that pre-compresses a surface having adhesion on the substrate in 5kgf/cm at about 80°C and then removes a separation paper film.
  • the adhesive is a paste type, it is possible to apply a constant amount of adhesive in a desired shape by using a spraying apparatus or a screen printer apparatus.
  • the NCA may include non-conductive particles.
  • non-conductive particles silica of ID or less, alumina, beryllia, silicon carbide, diamond, boronitride, etc. may be included.
  • the thermal expansion coefficient of adhesive can be lowered by adding the non-conductive particles as described above.
  • the NCA using polymer resin as main component can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin, for example.
  • the present invention includes a curing process of adhesive applicable to various bonding structures.
  • the curing process of adhesive according to the present invention includes a process for applying ultrasonic energy to the adhesive. By applying the ultrasonic energy, it is possible to reduce process time and temperature.
  • the ultrasonic vibration may use longitudinal direction or horizontal direction or combinations thereof.
  • a longitudinal ultrasonic transducer and/or a horizontal ultrasonic transducer may be used.
  • the features of the longitudinal ultrasonic transducer are to improve production yield and bonding reliability by making vibration applied to all the bonding areas uniform.
  • the vibration is continued even after the upper electrodes and the lower electrodes are contacted, there is risk of a damage of a chip. In this case, it mitigates impact by covering the end of the ultrasonic horn with a Teflon cap.
  • the horizontal ultrasonic transducer since the vibration is applied in a horizontal direction, the damage resulting from the longitudinal transducer can be minimized.
  • the bonding properties at the end of the chip are worse by generation of cone type vibration, such that the degradation of production yield and bonding reliability occurs.
  • a proper frequency range is 20KHz to 60KHz in terms of characteristics of ICA, ACA, NCA. If the frequency is increased at the time of applying the same energy, the amplitude can be reduced in inverse proportion thereto to reduce a misalignment or the damage of the chip. Further, since the heating operation of the adhesive indicates different characteristics in accordance with the frequency, it is necessary to perform optimization process to be matched with the conditions required for the process. Meanwhile, since the vibration frequency is determined by the mass and shape of a vibrator in a single apparatus, it is necessary to modify or replace the apparatus in order to change the frequency.
  • the ultrasonic energy applied upon bonding is determined by the ultrasonic vibration amplitude. Since the ultrasonic vibration amplitude is determined by voltage from a power source applied to the oscillator, the amplitude can be controlled by changing the voltage. If the ultrasonic energy applied upon bonding is too large, since the damage of the chip or the overheating of the adhesive occurs, it is necessary to optimize the ultrasonic vibration amplitude. In particular, in the flip chip bonding using ICA, ACA, and NCA, damage to the bump and the pad can be caused after the contact of the bump and the pad occurs or the damage of the chip can be caused after the adhesive is cured. In order to prevent these, an amplitude variable method can be used, that smoothly reduces the voltage applied to reduce the ultrasonic vibration amplitude, when the bonding is almost completed, during the bonding process being preceded.
  • the ultrasonic vibration frequency and the vibration amplitude are determined, heating value in the adhesive in accordance with time is determined. Since the present invention implements the thermal ultrasonic bonding using ICA, ACA, and NAC, it is very important to cure the adhesive for a proper time at a proper temperature.
  • the proper temperature is about 180°C to 400°C in consideration of the curing temperature and decomposition temperature of the adhesive. If the temperature is low, the curing does not occur so that the bonding cannot occur. And if the temperature is high, the bonding reliability is worse due to the decomposition of the adhesive or the void generation inside the adhesive.
  • the proper time means the time until the adhesive is completely cured.
  • the ultrasonic energy can be applied a method applying a constant frequency for the designated time or a method applying it in a pulse form. That is, when the ultrasonic energy is continuously applied under the conditions of any ultrasonic vibration frequency and vibration amplitude, if the temperature of the adhesive does not exceed the temperature range, the thermosonic bonding can be implemented with only the control of the ultrasonic vibration time. However, if the ultrasonic vibration frequency and/or vibration amplitude has a large value so that the temperature of the adhesive exceeds the temperature range, overheating of the adhesive can be prevented by providing energy intermittently by the power apply in pulse form.
  • the ICA, ACA, and NCA have Theological characteristics according to temperature. Since the heat generated inside the adhesive itself by the ultrasonic energy varies according to the rheological characteristics of the adhesive, initial temperature rising rate can be changed when the temperature rises by applying heat to all or some of the upper and lower bonding portions. Further, when heat applies to the adhesive to minimize viscosity of the adhesive prior to the curing thereof so that the adhesive resin can flow smoothly, there are effects of increasing adhesion between the bonding areas and further lowering the process pressure.
  • FIG. 4 shows a bonding process between a semiconductor chip and a substrate using an ICA.
  • the bonding process performs SiO passivation on a silicon chip and then deposits
  • Al wirings thereon at thickness of ID After this, it performs SiN or SiO passivation process and then forms I/O via of IOOD I/O diameter and 180D pitch. It forms the gold stud bump on I/O pad and then performs a planarization process to reduce the deviation of the heights of the respective bump. At this time, it can form the copper stud bump instead of the gold stud bump and also performs the planarization process.
  • the substrate is a FR-4 organic substrate of thickness of 1mm, has nickel/ copper/gold wirings as gold wirings and is protected with a solder mask excepting electrodes.
  • the ICA is mixed with matrix materials such as polymer resin, etc. and conductive fillers such as silver, carbon particle, etc and its general form is paste.
  • the polymer resin there are thermoplastic resins such as acrylic resin, polyimide resin, polysulfone resin, etc., thermosetting resin such as epoxy resin, phenol resin, melamine resin, polyester resin, etc., or mixing resins thereof.
  • the conductive filler there are silver, copper, gold, palladium, silver-palladium alloy, carbon, nickel, or mixtures thereof. Other additives and hardeners, etc. are mixed therewith.
  • the ICA obtained through the said process is uniformly applied on the planar substrate such glass etc. at a height of about 10D. After this, the test chip dips on the ICA layer applied by using a flip chip bonder. The ICA is transferred to the end of the gold stud bump formed on the test chip through this process.
  • the ICA formed at the end of the gold stud bump is cured by aligning the test chip to the electrodes of the organic substrate and then applying the ultrasonic energy thereto. At this time, the curing of the ICA is completed in several seconds and the gold stud bump of the test chip is electrically connected to the electrodes on the organic substrate by the ICA cured therebetween. After this, the underfill, which is the lower filler, is applied between the chip and the substrate and the underfill is thermosetted, so that the flip chip bonding using the ICA is completed.
  • FlG. 5 shows an example forming the polymer bump directly using the ICA without forming the gold stud bump or the copper stud bump in the respective FOs of the semiconductor chip.
  • the flip chip bonding process can be performed by curing the polymer bump by the ultrasonic energy.
  • the ICA polymer bump is formed on the respective I/Os of the test chip by a jetting process or a screen printing process of the ICA and then the ultrasonic energy is applied to the formed bump to harden the ICA polymer bump, so that the flip chip bonding is completed.
  • the underfill process for improving reliability can be performed by filling the lower filler between the chip and the substrate.
  • the surface mounting bonding process can be performed by using the ultrasonic energy in the bonding process of the surface mounting devices using the ICA.
  • the ICA is uniformly applied on the substrate electrodes through the screen printing process. After this, the ICA is cured by aligning surface mounting lead frame devices or passive element devices in the bonding region to which the ICA is applied and then, applying the ultrasonic energy upon mounting them. If the bonding process of the surface mounting devices is performed by adding the ultrasonic energy to the ICA, the surface mounting bonding process can be completed without a further curing process, unlike the surface mounting bonding process that mounts the surface mounting devices by using an existing pick and place apparatus and then performs the curing process of the ICA.
  • FlG. 6 shows the bonding process of the semiconductor chip and the substrate using the ACA.
  • the bonding process performs SiO passivation on a silicon chip and deposits Al wirings thereon at a thickness of ID. After this, it performs SiN or SiO passivation process and then forms I/O via of IOOD I/O diameter and 180D pitch.
  • the non-solder bump for the ACA bonding can be formed as follows.
  • the gold stud bump or the copper stud bump is formed on the I/O pad at a height of about 60 to 8OD by using a gold wire apparatus.
  • a planarization process is performed in order to reduce the height deviation of the respective bumps. This process is to make the deformation quantity at the end portion of the bump upon bonding the ACA large and then to expand the bonding area so that many conductive particles are bonded between the bump and the substrate and electrical contact resistance therebetween is lower. Further, This process can prevent the damage of the chip when overpressure is applied to a specific FO due to non-uniformity of the height of the bump.
  • An electroless bump can be formed at a height of 20 to 3OD by using electroless nickel/copper/gold plating processes.
  • the zincate process is performed to activate Al and then a nickel bump is formed while dipping it in electroless nickel plating solution at proper temperature for proper time. If necessary, an electroless copper layer having weak hardness may be formed.
  • thin gold plating is performed using electroless gold plating solution in order to prevent oxidation of nickel and copper and improve electrical conductivity.
  • the flip chip bonding process by the ACA is performed by using the electroless nickel/gold bumps or nickel/ copper/gold bumps so that the conductive particles in the ACA are connected between the bumps and the substrate electrodes to have a low contact resistance.
  • a gold electrolytic bump can be formed.
  • the gold plating bump having a constant thickness is formed by using an electrolytic gold plating method. Then, the PR is removed and the seed layer is etched so that the electrolytic gold plating bump can be formed in the respective FO portions.
  • the used substrate is a FR-4 organic substrate of a thickness of lmm, has nickeF copper/gold wirings as gold wirings and is protected with a solder mask excepting substrate electrodes to which the ACA is applied.
  • the ACA includes insulating resins and conductive particles.
  • a film as polymer resin, mixtures of solid epoxy, liquid epoxy, phenoxy resin, and MEK/ toluene solvent may be used.
  • hardener microcapsulated imidazole hardener may be used.
  • the hardener may be added in the liquid epoxy.
  • Surface treated conductive particles are mixed therewith to produce the ACA solution. If necessary, non-conductive particles having a thickness of ID or less may be mixed in order to lower thermal expansion coefficient after curing the ACA.
  • the film is formed on a separation paper film by a Doctor Blade method and is left at 80°C for one minute in order to remove solvent.
  • the thickness of the film varies according to the bump size of the chip, it has a thickness of 10 to 50D to accept various bumps.
  • the paste optimizes the liquid epoxy and additive mixtures to have the rhelogical characteristics suitable for the screen printing process or the spraying process.
  • the chips in which the non-solder bump is formed are aligned. Then, the flip chip bonding is performed by simultaneously applying heat, pressure and ultrasonic energy to the chips or applying only ultrasonic energy and pressure to the chips.
  • the process for applying the ACA on the substrate is as follows. If the ACA is the film-type ACA, the ACA can apply on the substrate by removing the separation paper film after pre- compressing the surface having the film on the substrate with 5kgf/cm at 80°C. If the ACA is the paste-type ACA, the ACA can apply on the substrate with a constant amount in a desired shape by using a spraying apparatus or a screen printing apparatus.
  • the temperature of the ACA can be raised much faster in the thermo-compression bonding process using the ultrasonic vibration or the compression bonding process using the ultrasonic vibration than in the existing thermo-compression bonding process. As shown in FlG. 7, it can be found that in the flip chip bonding structure by the ultrasonic energy, the temperature of ACA is raised to 270°C within 2 seconds and to 305°C at a maximum and then, the temperature is rapidly lowered after the ultrasonic energy is removed.
  • FlG. 8 shows a bonding process between the semiconductor chip and the substrate using a NCA.
  • the non-solder bump is a gold stud bump, since it is directly mechanical bonded to the substrate electrode for a NCA bonding.
  • the gold stud bump or the copper stud bump is also formed on the I/
  • the chip and the substrate are easily arranged and bonded so that the bonding area can be widened.
  • the substrate used is a FR-4 organic substrate with the thickness of lmm, and has nickel/copper/gold wirings, and is protected with the solder mask excepting the electrodes.
  • the NCA comprises insulating resins and non-conductive particles.
  • the film as the polymer resin, mixture of solid epoxy, liquid epoxy, phenoxy resin and MEK/toluene solvent can be used, and as the hardener, a microcapsulated imidazole hardener can be used.
  • the hardener In the case of the paste, the hardener can be used in the liquid epoxy.
  • the NCA can be produced by blending the surface-treated non-conductive particles having thickness lower than ID in order to control physical properties such as the thermal expansion coefficient of the NCA, etc.
  • a film is formed on the separation paper film by using a Doctor Blade method, and is left at a temperature of 80°C for one minute in order to remove the solvent.
  • the thickness of the film varies according to the size of the bump of the chip, the film has a thickness within a range of 10-50D so that various bumps can be accepted.
  • the test chips in which the non-solder bump such as the gold stud bump is formed are aligned.
  • the flip chip bonding is performed by simultaneously applying heat, pressure and ultrasonic energy to the chips or applying only ultrasonic energy and pressure to the chips.
  • the process for applying the NCA on the substrate is as follows. If the NCA is the film-type NCA, the NCA can apply on the substrate by removing the separation paper film after pre-compressing the surface having the film on the substrate with 5kgf/cm 2 at 80°C. If the NCA is the paste-type NCA, the NCA can apply on the substrate with a constant amount in a desired shape by using a spraying apparatus or a screen printing apparatus. The alignment of the electrodes of the substrate and the bump of the chip is easily achieved because the NCA is relatively transparent.
  • the temperature of the NCA can be raised much faster in the thermo-compression bonding process using the ultrasonic vibration or the compression process using the ultrasonic vibration as in the ACA ultrasonic bonding process than in the existing compression process.
  • the curing of the NCA is rapidly accomplished only by the ultrasonic energy in the state that the heat is not applied from the external.
  • bonding resistance can be obtained by a stable NCA bonding so that the process pressure can be significantly reduced in the flip chip bonding using the NCA through the ultrasonic bonding process.
  • FlG. 9 shows a bonding process between a flexible substrate and a rigid substrate by the ACA or NCA curing using the ultrasonic energy.
  • a bonding method using ACF/ACP or NCF/NCP is on the rise from an existing method using a solder or a socket according to a tendency of a micro-pitch bonding method. For this reason, utilization of an adhesiveless-type flexible substrate such that a copper wiring is directly formed on polyimide base film is increased for the micro-pitch bonding. Furthermore, it is possible that the bonding is performed by using the ACA or the NCA even for the flexible substrate where the adhesive layer exists between the existing polyimide base film and the copper wiring. For this reason, in this embodiment, the adhesiveless-type flexible substrate having various pitches from a pitch of 200D to a pitch of 500D is provided, and a FR-4 substrate having a thickness of 1 mm is provided as the rigid substrate.
  • a general thermosettable type would use the ACF of a thickness of 4OD as the interconnect material and the gold-plated nickel particle of 8D as the conductive particles.
  • an ultrasonic bonding apparatus of the an OLD or PCB bonder method must be used, not a general flip chip bonder. That is, the curing of the ACF is induced by pre-compressing and applying the ACF to the bonding area of the rigid substrate and aligning between the electrodes of the flexible substrate and the electrodes of the rigid substrate, and then, applying the heat ultrasonic energy thereto upon the compression process. Further, the bonding between the flexible substrate and the rigid substrate is obtained by first pre- compressing the flexible substrate and the rigid substrate by the ACF with the general OLB or PCB bonder and then, applying the ultrasonic energy to the flexible substrate.
  • the rigid substrate can be heated and the ultrasonic energy can be applied in a pulse way for the bonding process between the flexible substrate and the rigid substrate using the ACF that is effective and reliable.
  • ACF that is effective and reliable.
  • each of longitudinal ultrasonic energy and transversal ultrasonic energy can independently be used.
  • the present invention is capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing adhesives when bonding between electrical devices.
  • the present invention has an effect of lowering process pressure in the case of thermo-compression bonding process.
  • the bonding process by the present invention is capable of improving yield and productivity and providing the bonding process of excellent adhesive strength and reliability.

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Abstract

The present invention is to provide a method for bonding between electrical devices, including the steps of: aligning electrodes on a bonded area of an upper electrical device and a lower electrical device to be bonded; and curing of adhesives by applying ultrasonic energy to the adhesives between the upper electrical device and the lower electrical device.

Description

Description
METHOD FOR BONDING BETWEEN ELECTRICAL DEVICES USING ULTRASONIC VIBRATION
Technical Field
[1] The present invention relates to a method for bonding between electrical devices, and more specifically, to a method for bonding between electrical devices capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing of adhesives when bonding between electrical devices, and lowering process pressure in the case of thermo-compression bonding process. Background Art
[2] With current demands such as slimness and lightweight, high performance, high integration, and eco-friendly semiconductor packaging technologies, the importance of a flip chip technology has been spotlighted among chip level bonding methods. The flip chip technology has currently been expanding its utilization field into display packaging such as that for a smart card, an LCD, a PDP, etc., a computer, a mobile phone, a communication system, or the like. Interconnect materials used in the flip chip technology can mainly be divided into solders and non-solder materials. Until now, the flip chip technology using solders has mainly been used. However, solders has problems with cost effectiveness and complex bonding processes, such as solder flux coating, chip/substrate alignment, solder bump reflow, flux removal, underfilling, and curing. Also, as the chip size is getting smaller, it is getting more difficult to fabricate solder balls, and the processing cost for thin film processes and lithography processes, etc. is getting increased. Therefore the interest for the non-solder materials have been increased, as the interest for the fine pitch bonding technology and the low cost flip chip technology is increasing. Accordingly, flip chip bonding technologies have been developed using adhesives which have advantages of low cost, ultra fine- pitch capability, lead-free process, eco-friendly fluxless process, and low temperature process compared with that using general solder flip chips.
[3] Adhesives as the interconnect materials for semiconductor packages mainly includes isotropic conductive adhesive (ICA), anisotropic conductive adhesive (ACA), non-conductive adhesive (NCA), etc.. Generally, adhesives are composite materials consisting of conductive metal particles and polymer resin having insulating properties and the adhesion, and are transited to the ICA from the NCA or the ACA in accordance with the content of the conductive particles. Especially, the content value of the conductive particles when an electrical transition is generated is referred to as percolation threshold.
[4] According to the content of the conductive particles, an adhesive not having the conductive particles is the NCA, and an adhesive having the conductive particles smaller than the percolation threshold value is the ACA. Also, an adhesive having the conductive particles higher than that is the ICA whose material itself has conducting properties. The purpose, function and application as the interconnect materials for the semiconductor package may be various in terms of the characteristics thereof.
[5] An application example of the isotropic conductive adhesive (ICA) as the interconnect materials for the non-solder flip chip package is shown in FlG. 1. Referring to FlG. 1, after the ICA is applied on the non-solder bumps, such as gold stud bumps or gold plated bumps, and electroless nickel/gold bumps, which are formed on a semiconductor chip, the alignment of the non-solder bumps and substrate electrodes is performed. And then, heat is applied to the ICA to cure it so that electrical interconnections between the non-solder bumps and the substrate electrodes are made. At this time, although it may be different in accordance with curing conditions of the ICA, heating is performed at approximately 180°C for 10 to 30 minutes. Then, the underfill process between the chip and the substrate is performed to improve reliability of the flip chip package.
[6] An anisotropic conductive film (ACF) is a polymer film having electrically anisotropic properties and adhesion properties. ACF has electrically conducting properties in a film thickness direction and insulating properties in a surface direction, and basically consists of conductive particles such as nickel, gold/polymer, silver, etc. and insulating resins having thermosetting property or thermoplasticity. Electrical interconnections are made between upper electrodes and lower electrodes with the conductive particles. These conductive particles are dispersed in the ACF by simultaneously being put under heat and pressure between a chip or a flexible circuit substrate having a chip mounted thereon and a glass substrate or a rigid substrate(Fig.2).
[7] At this time, the curing of the insulating resin is generated by the applied heat to generate greater adhesion strength. In order to develop a low cost adhesive manufacturing process and a low cost flip chip process using such adhesives, the ACF using thermosetting epoxy resin or acrylic-based resin having high speed curable properties has been commercialized. The ACA may be divided into a film form (Anisotropic Conductive Film, ACF) and a paste form (Anisotropic Conductive Paste, ACP). Recently, adhesives in a paste form have been developed in order to simplify the bonding process and the adhesive manufacture process. Further, there is a non- conductive film (NCF) for removing conductive particles in order to achieve ultra fine- pitch bonding and a low cost, and a NCP manufactured in a paste form. [8] FlG. 3 shows a flip chip bonding process using a NCF or the NCP as an interconnect material, he process, first applies the NCF or the NCP around substrate electrodes and aligns it with a chip in which non-solder bumps, especially gold stud bumps are formed, and then hardens the NCA by the applied heat while directly contacting the non-solder bumps with the substrate electrodes by thermo-compression bonding process.
[9] The interconnect materials such as the ICA, ACA (ACF, ACP), NCA (NCF, NCP), etc. have been used for mounting of a flat panel display module such as an LCD, a PDP, an OLED, etc., a surface mounting of electrical devices, and a semiconductor flip chip bonding. Further, the interconnect materials have already widely been used in an out lead bonding (OLB) process, a PCB process, a chip-on-glass (COG) process, and a chip-on-film (COF) process in a flat panel display module mounting field and have expanded their market into a non-solder flip chip bonding process and a surface devices mounting technology.
[10] The ICA is material that can replace an existing solder used in bonding in order to assemble electrical or electronic devices or circuit wirings. Its application fields are similar to solder bonding fields. That is, it can be used for assembling the surface mounting devices that require solder reflow or bonding the flip chip using a solder and can achieve the bonding by thermosetting the ICA at temperature lower than that of the solder reflow process. However, there is a weak point in this case that a process temperature is high and curing time is long.
[11] In the case of the ACA, it has been used in mounting of a display module. An ACF is the most widely used for an OLB bonding used when bonding a flexible substrate to a glass substrate and a PCB bonding used when bonding a flexible substrate to a PCB substrate. It has various kinds of conductive particles in accordance with application fields and requires a low temperature rapid curing type where bonding temperature is getting lower while bonding time is getting faster.
[12] The more a driving circuit IC chip becomes high density and high integration, the more the need of ultra fine-pitch is increased in COG process in which a driving circuit IC chip directly bonds to the glass substrate, and in COF process in which a driving circuit IC chip bonds by the flip chip method to the flexible substrate.
[13] Therefore, the current situation requiring the ultra fine-pitch bonding of the ACF and the low temperature rapid curing type is expected to continue. Further, the ACF bonding will be replaced in the mounting of the flexible substrate and the rigid substrate in addition to the display module mounting in accordance to the demands of the ultra fine-pitch bonding ability of a socket or a solder, freedom in design, and the reduction of a bonding area and height. Its utility is raised due to the advantages of the non-solder flip chip bonding process instead of the flip chip bonding using the existing solder. So, the NCA is rapidly emerging as substitute material of the ACA. As the non- solder bump used in the non-solder flip chip bonding process, there are a gold stud bump, a gold plating bump, an electroless nickel bump, and a copper bump, etc. In this case, since the flip chip bonding by the reflow cannot be performed due to high melting point, the flip chip bonding process has been performed by the thermo- compression bonding process using the ACF.
[14] However, OLB, PCB, COG, COF using the ACF, and Flex-to-Rigid bonding process, and the flip chip bonding process are based upon a mechanical contact of the conductive particles with electrodes and the non-solder bumps using the thermo- compression bonding process and the thermosetting of the polymer resin next thereto. Therefore, it is necessary to solve various problems of application of bonding pressure, uniform thermosetting of polymer resin, high process temperature for fast thermosetting operation and thus, thermal deformation of a package, and substrate planarity, etc. In particular, it is very difficult to apply the ACF bonding technology due to the limitation on the generated bonding pressure if the thickness of a compound semiconductor chip or a silicon chip is thin as they become relatively brittle by the process pressure.
[15] Therefore, if new materials or processes capable of solving the above problems in the semiconductor bonding process or in the mounting process using ICA, ACF, NCF, ACP, and NCP are developed, the possibility for use of polymer interconnect materials such as ICA, ACA, and NCA, etc. and a low temperature bonding process using them, and a low cost bonding technology are very high.
[16] Further, under the situation to tightly restrict the use of CFC and the use of Pb because environmental problems (due to the use of Flux, cleaning, solder including Pb, etc) of electronic products are seen as serious problems, the intense interest about these materials as eco-friendly substitute materials has been increased. Disclosure of Invention Technical Problem
[17] The present invention has been proposed to overcome the said problems of the prior art. It is an object of the present invention to remove the said problems of the prior art, and in particular, to provide a method for bonding between electrical devices capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a step of curing of adhesives when bonding between electrical devices, and lowering process pressure in the case of thermo-compression bonding process.
Technical Solution
[18] In order to accomplish the object, the present invention is to provide a method for bonding between electrical devices including the steps of: aligning electrodes on a bonding area of an upper electrical device and a lower electrical device to be bonded; and curing of adhesives by applying ultrasonic energy to the adhesive between the upper electrical device and the lower electrical device and thus heating the adhesive itself.
Advantageous Effects [19] The present invention is capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing adhesives when bonding between electrical devices. [20] Also, the present invention has an effect of lowering process pressure in the case of thermo-compression bonding process. As a result, the bonding process by the present invention is capable of improving yield and productivity and providing the bonding process of excellent adhesive strength and reliability.
Brief Description of the Drawings [21] Other objects and aspects of the present invention will become apparent from the following description of embodiments with reference to the accompanying drawings in which: [22] FlG. 1 shows a flip chip bonding process using a conventional isotropic conductive adhesive; [23] FlG. 2 shows a flip chip bonding process using a conventional anisotropic conductive adhesive; [24] FlG. 3 shows a flip chip bonding process using a conventional non-conductive adhesive; [25] FlG. 4 shows a flip chip bonding process using isotropic conductive adhesive according to the present invention (in case of using a bump as an intermediary for bonding); [26] FlG. 5 shows a flip chip bonding process using isotropic conductive adhesive according to the present invention (in case of not using a bump as an intermediary for bonding); [27] FlG. 6 shows a flip chip bonding process using anisotropic conductive adhesive according to the present invention; [28] FlG. 7 shows temperature change of adhesive according to time in the case of processing anisotropic conductive adhesive with ultrasonic energy. [29] FlG. 8 shows a flip chip bonding process using non-conductive adhesive according to the present invention; [30] FlG. 9 shows flexible-rigid substrates bonding process using anisotropic conductive adhesive according to the present invention;
Best Mode for Carrying Out the Invention [31] Hereinafter, the present invention will be described in more detail.
[32] In the present invention, the electrical devices to be boned mean the devices used in electrical products such as a semiconductor chip or a substrate, etc., and the bonding between electrical devices mean the electrical connection between a semiconductor chip and a substrate, between a semiconductor chip and a semiconductor chip, or between a substrate and a substrate.
[33] A kind of such a semiconductor chip is not specially limited, and for example, a display driving circuit IC, an image sensor IC, a memory IC, a non-memory IC, an ultra high frequency or RF IC, a semiconductor IC having a silicon as main component and a compound semiconductor IC may be included.
[34] The semiconductor chip may not have a non-solder bump in the electrodes on the bonding area (or an input/output pad) or may have a kind of bump selected from, for example, a gold stud bump, a copper stud bump, a gold-plating bump, a copper plating bump, an electroless nickel/gold bump and an electroless nickel/copper/gold bump, as a metal stud bump or a metal plating bump.
[35] Also, the substrates may be flexible substrates or rigid substrates. One of these substrates may form an electrical connection with a semiconductor chip, or may form an electrical connection with the other substrates and then include an electrical connection between the flexible substrates, between the rigid substrates, or between the flexible substrates and the rigid substrates. The flexible substrates mean the substrates with flexibility such as forming metal lines on a polyimide substrate, for example. Meanwhile, the rigid substrates may be substrates of epoxy/glass, ceramic, glass and silicon semiconductor.
[36] The adhesive may be a conductive adhesive or a non-conductive adhesive, and the conductive adhesive may again be ICA or ACA.
[37] The ICA includes conductive particles. The usable conductive particles are not specially limited and for example, one selected from a group consisting of silver, copper, gold, carbon, nickel, palladium and low melting point solder powder, or combinations thereof may be included.
[38] The ICA using polymer resin as main component, for example, can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin.
[39] The ACA includes the form of an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP). When the adhesive is a film type, an adhesive layer can be applied on the substrate by a method that pre-compresses a surface having adhesion on the substrate in 5kgf/cm at about 80°C and then removes a separation paper film. Further, when the adhesive is a paste type, it is possible to apply a constant amount of adhesive in a desired shape by using a spraying equipment or a screen printer.
[40] These adhesives include conductive particles. The usable conductive particles are not specially limited and for example, one selected from a group consisting of gold coated polymer particles, gold coated nickel particles, gold coated copper particles, low melting point solder layer coated copper particles, and low melting point solder particles, or combinations thereof may be included.
[41] Also, the ACA may further include non-conductive particles smaller in size than conductive particles. As an example of the non-conductive particles, silica of ID or less, alumina, beryllia, silicon carbide, diamond, boronitride, etc. may be included. The thermal expansion coefficient of adhesive can be lowered by adding the non- conductive particles as described above.
[42] The ACA using polymer resin as main component can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin, for example.
[43] The NCA includes the forms of a non-conductive film (NCF) or a non-conductive paste (NCP). When the adhesive is a film type, an adhesive layer can be applied on the substrate by a method that pre-compresses a surface having adhesion on the substrate in 5kgf/cm at about 80°C and then removes a separation paper film. Further, when the adhesive is a paste type, it is possible to apply a constant amount of adhesive in a desired shape by using a spraying apparatus or a screen printer apparatus.
[44] The NCA may include non-conductive particles. As an example of the non- conductive particles, silica of ID or less, alumina, beryllia, silicon carbide, diamond, boronitride, etc. may be included. The thermal expansion coefficient of adhesive can be lowered by adding the non-conductive particles as described above.
[45] The NCA using polymer resin as main component can be selected from thermoplastic resin such as epoxy resin, polyester resin, acrylic resin, polyimide resin and polysulfone resin, etc. or thermosetting resin, for example.
[46] The present invention includes a curing process of adhesive applicable to various bonding structures. The curing process of adhesive according to the present invention includes a process for applying ultrasonic energy to the adhesive. By applying the ultrasonic energy, it is possible to reduce process time and temperature.
[47] The ultrasonic vibration may use longitudinal direction or horizontal direction or combinations thereof. To this end, a longitudinal ultrasonic transducer and/or a horizontal ultrasonic transducer may be used. It is known that the features of the longitudinal ultrasonic transducer are to improve production yield and bonding reliability by making vibration applied to all the bonding areas uniform. However, if the vibration is continued even after the upper electrodes and the lower electrodes are contacted, there is risk of a damage of a chip. In this case, it mitigates impact by covering the end of the ultrasonic horn with a Teflon cap. Meanwhile, in the case of the horizontal ultrasonic transducer, since the vibration is applied in a horizontal direction, the damage resulting from the longitudinal transducer can be minimized. However, in the case of using a die collet, etc. in order to fix the chip, the bonding properties at the end of the chip are worse by generation of cone type vibration, such that the degradation of production yield and bonding reliability occurs.
[48] In the present invention, a proper frequency range is 20KHz to 60KHz in terms of characteristics of ICA, ACA, NCA. If the frequency is increased at the time of applying the same energy, the amplitude can be reduced in inverse proportion thereto to reduce a misalignment or the damage of the chip. Further, since the heating operation of the adhesive indicates different characteristics in accordance with the frequency, it is necessary to perform optimization process to be matched with the conditions required for the process. Meanwhile, since the vibration frequency is determined by the mass and shape of a vibrator in a single apparatus, it is necessary to modify or replace the apparatus in order to change the frequency.
[49] If the invention fixes and uses the frequency by using a single apparatus, the ultrasonic energy applied upon bonding is determined by the ultrasonic vibration amplitude. Since the ultrasonic vibration amplitude is determined by voltage from a power source applied to the oscillator, the amplitude can be controlled by changing the voltage. If the ultrasonic energy applied upon bonding is too large, since the damage of the chip or the overheating of the adhesive occurs, it is necessary to optimize the ultrasonic vibration amplitude. In particular, in the flip chip bonding using ICA, ACA, and NCA, damage to the bump and the pad can be caused after the contact of the bump and the pad occurs or the damage of the chip can be caused after the adhesive is cured. In order to prevent these, an amplitude variable method can be used, that smoothly reduces the voltage applied to reduce the ultrasonic vibration amplitude, when the bonding is almost completed, during the bonding process being preceded.
[50] If the ultrasonic vibration frequency and the vibration amplitude are determined, heating value in the adhesive in accordance with time is determined. Since the present invention implements the thermal ultrasonic bonding using ICA, ACA, and NAC, it is very important to cure the adhesive for a proper time at a proper temperature. Herein, the proper temperature is about 180°C to 400°C in consideration of the curing temperature and decomposition temperature of the adhesive. If the temperature is low, the curing does not occur so that the bonding cannot occur. And if the temperature is high, the bonding reliability is worse due to the decomposition of the adhesive or the void generation inside the adhesive. The proper time means the time until the adhesive is completely cured.
[51] According to the present invention, the ultrasonic energy can be applied a method applying a constant frequency for the designated time or a method applying it in a pulse form. That is, when the ultrasonic energy is continuously applied under the conditions of any ultrasonic vibration frequency and vibration amplitude, if the temperature of the adhesive does not exceed the temperature range, the thermosonic bonding can be implemented with only the control of the ultrasonic vibration time. However, if the ultrasonic vibration frequency and/or vibration amplitude has a large value so that the temperature of the adhesive exceeds the temperature range, overheating of the adhesive can be prevented by providing energy intermittently by the power apply in pulse form.
[52] The ICA, ACA, and NCA have Theological characteristics according to temperature. Since the heat generated inside the adhesive itself by the ultrasonic energy varies according to the rheological characteristics of the adhesive, initial temperature rising rate can be changed when the temperature rises by applying heat to all or some of the upper and lower bonding portions. Further, when heat applies to the adhesive to minimize viscosity of the adhesive prior to the curing thereof so that the adhesive resin can flow smoothly, there are effects of increasing adhesion between the bonding areas and further lowering the process pressure.
[53] Hereinafter, the bonding process between the electrical devices by the curing of the adhesive using the ultrasonic energy according to the present invention will be described with reference to the embodiment in more detail.
[54] FIG. 4 shows a bonding process between a semiconductor chip and a substrate using an ICA.
[55] The bonding process performs SiO passivation on a silicon chip and then deposits
Al wirings thereon at thickness of ID. After this, it performs SiN or SiO passivation process and then forms I/O via of IOOD I/O diameter and 180D pitch. It forms the gold stud bump on I/O pad and then performs a planarization process to reduce the deviation of the heights of the respective bump. At this time, it can form the copper stud bump instead of the gold stud bump and also performs the planarization process.
[56] The substrate is a FR-4 organic substrate of thickness of 1mm, has nickel/ copper/gold wirings as gold wirings and is protected with a solder mask excepting electrodes.
[57] The ICA is mixed with matrix materials such as polymer resin, etc. and conductive fillers such as silver, carbon particle, etc and its general form is paste. As the polymer resin, there are thermoplastic resins such as acrylic resin, polyimide resin, polysulfone resin, etc., thermosetting resin such as epoxy resin, phenol resin, melamine resin, polyester resin, etc., or mixing resins thereof. As the conductive filler, there are silver, copper, gold, palladium, silver-palladium alloy, carbon, nickel, or mixtures thereof. Other additives and hardeners, etc. are mixed therewith. [58] The ICA obtained through the said process is uniformly applied on the planar substrate such glass etc. at a height of about 10D. After this, the test chip dips on the ICA layer applied by using a flip chip bonder. The ICA is transferred to the end of the gold stud bump formed on the test chip through this process.
[59] The ICA formed at the end of the gold stud bump is cured by aligning the test chip to the electrodes of the organic substrate and then applying the ultrasonic energy thereto. At this time, the curing of the ICA is completed in several seconds and the gold stud bump of the test chip is electrically connected to the electrodes on the organic substrate by the ICA cured therebetween. After this, the underfill, which is the lower filler, is applied between the chip and the substrate and the underfill is thermosetted, so that the flip chip bonding using the ICA is completed.
[60] In the present embodiment, it is possible to increase the curing temperature and reduce the curing time by several seconds by use of the ultrasonic energy, instead of using an existing thermosetting process for curing the ICA.
[61] FlG. 5 shows an example forming the polymer bump directly using the ICA without forming the gold stud bump or the copper stud bump in the respective FOs of the semiconductor chip. The flip chip bonding process can be performed by curing the polymer bump by the ultrasonic energy.
[62] That is, the ICA polymer bump is formed on the respective I/Os of the test chip by a jetting process or a screen printing process of the ICA and then the ultrasonic energy is applied to the formed bump to harden the ICA polymer bump, so that the flip chip bonding is completed. After this, the underfill process for improving reliability can be performed by filling the lower filler between the chip and the substrate.
[63] Further, the surface mounting bonding process can be performed by using the ultrasonic energy in the bonding process of the surface mounting devices using the ICA.
[64] First, the ICA is uniformly applied on the substrate electrodes through the screen printing process. After this, the ICA is cured by aligning surface mounting lead frame devices or passive element devices in the bonding region to which the ICA is applied and then, applying the ultrasonic energy upon mounting them. If the bonding process of the surface mounting devices is performed by adding the ultrasonic energy to the ICA, the surface mounting bonding process can be completed without a further curing process, unlike the surface mounting bonding process that mounts the surface mounting devices by using an existing pick and place apparatus and then performs the curing process of the ICA.
[65] FlG. 6 shows the bonding process of the semiconductor chip and the substrate using the ACA.
[66] First, the bonding process performs SiO passivation on a silicon chip and deposits Al wirings thereon at a thickness of ID. After this, it performs SiN or SiO passivation process and then forms I/O via of IOOD I/O diameter and 180D pitch. The non-solder bump for the ACA bonding can be formed as follows.
[67] The gold stud bump or the copper stud bump is formed on the I/O pad at a height of about 60 to 8OD by using a gold wire apparatus. After this, a planarization process is performed in order to reduce the height deviation of the respective bumps. This process is to make the deformation quantity at the end portion of the bump upon bonding the ACA large and then to expand the bonding area so that many conductive particles are bonded between the bump and the substrate and electrical contact resistance therebetween is lower. Further, This process can prevent the damage of the chip when overpressure is applied to a specific FO due to non-uniformity of the height of the bump.
[68] An electroless bump can be formed at a height of 20 to 3OD by using electroless nickel/copper/gold plating processes. In this case, the zincate process is performed to activate Al and then a nickel bump is formed while dipping it in electroless nickel plating solution at proper temperature for proper time. If necessary, an electroless copper layer having weak hardness may be formed. After this, thin gold plating is performed using electroless gold plating solution in order to prevent oxidation of nickel and copper and improve electrical conductivity. The flip chip bonding process by the ACA is performed by using the electroless nickel/gold bumps or nickel/ copper/gold bumps so that the conductive particles in the ACA are connected between the bumps and the substrate electrodes to have a low contact resistance.
[69] Also, after forming a seed layer of Ti/Au on the whole area including the respective
I/Os of the test chip and applying photoresist (PR) to the portions excepting the respective FO pad portions, a gold electrolytic bump can be formed. The gold plating bump having a constant thickness is formed by using an electrolytic gold plating method. Then, the PR is removed and the seed layer is etched so that the electrolytic gold plating bump can be formed in the respective FO portions.
[70] The used substrate is a FR-4 organic substrate of a thickness of lmm, has nickeF copper/gold wirings as gold wirings and is protected with a solder mask excepting substrate electrodes to which the ACA is applied.
[71] The ACA includes insulating resins and conductive particles. In the case of a film, as polymer resin, mixtures of solid epoxy, liquid epoxy, phenoxy resin, and MEK/ toluene solvent may be used. As representative hardener, microcapsulated imidazole hardener may be used. Also, in the case of paste, the hardener may be added in the liquid epoxy. Surface treated conductive particles are mixed therewith to produce the ACA solution. If necessary, non-conductive particles having a thickness of ID or less may be mixed in order to lower thermal expansion coefficient after curing the ACA. In order to form the film, the film is formed on a separation paper film by a Doctor Blade method and is left at 80°C for one minute in order to remove solvent. Although the thickness of the film varies according to the bump size of the chip, it has a thickness of 10 to 50D to accept various bumps. In the case of the paste, it optimizes the liquid epoxy and additive mixtures to have the rhelogical characteristics suitable for the screen printing process or the spraying process.
[72] After applying the ACA obtained through the said process on the organic substrate, etc., the chips in which the non-solder bump is formed are aligned. Then, the flip chip bonding is performed by simultaneously applying heat, pressure and ultrasonic energy to the chips or applying only ultrasonic energy and pressure to the chips. The process for applying the ACA on the substrate is as follows. If the ACA is the film-type ACA, the ACA can apply on the substrate by removing the separation paper film after pre- compressing the surface having the film on the substrate with 5kgf/cm at 80°C. If the ACA is the paste-type ACA, the ACA can apply on the substrate with a constant amount in a desired shape by using a spraying apparatus or a screen printing apparatus. The temperature of the ACA can be raised much faster in the thermo-compression bonding process using the ultrasonic vibration or the compression bonding process using the ultrasonic vibration than in the existing thermo-compression bonding process. As shown in FlG. 7, it can be found that in the flip chip bonding structure by the ultrasonic energy, the temperature of ACA is raised to 270°C within 2 seconds and to 305°C at a maximum and then, the temperature is rapidly lowered after the ultrasonic energy is removed.
[73] In addition, differently from the case of giving the process pressure in the existing thermo-compression bonding process as 100 g per bump, although 20-50 g per bump is given, a stable bonding resistance can be obtained so that the process pressure can be significantly reduced upon the flip chip bonding using the ACA through the ultrasonic bonding process.
[74] FlG. 8 shows a bonding process between the semiconductor chip and the substrate using a NCA.
[75] By performing SiO passivation on the silicon chip, depositing Al wirings thereon at a thickness of ID and then, performing SiNx or SiOpassivation, an I/O via with an I/O diameter of IOOD and a pitch of 180D is formed. It is preferable that the non-solder bump is a gold stud bump, since it is directly mechanical bonded to the substrate electrode for a NCA bonding.
[76] For this reason, the gold stud bump or the copper stud bump is also formed on the I/
O pad at a height of 60 ~ 8OD using a gold wire apparatus. A planarization process is then performed for reducing deviation in height of each bump. This is for widening a bonding area by allowing an amount of deformation of the end portion of the bump to be large in the NCA bonding. Further, This process can prevent the damage of the chip when overpressure is applied to a specific FO due to non-uniformity of the height of the bump.
[77] In addition, the chip and the substrate are easily arranged and bonded so that the bonding area can be widened.
[78] The substrate used is a FR-4 organic substrate with the thickness of lmm, and has nickel/copper/gold wirings, and is protected with the solder mask excepting the electrodes.
[79] The NCA comprises insulating resins and non-conductive particles. In the case of the film, as the polymer resin, mixture of solid epoxy, liquid epoxy, phenoxy resin and MEK/toluene solvent can be used, and as the hardener, a microcapsulated imidazole hardener can be used. In the case of the paste, the hardener can be used in the liquid epoxy. Here, the NCA can be produced by blending the surface-treated non-conductive particles having thickness lower than ID in order to control physical properties such as the thermal expansion coefficient of the NCA, etc. In order to form the film, a film is formed on the separation paper film by using a Doctor Blade method, and is left at a temperature of 80°C for one minute in order to remove the solvent. Although the thickness of the film varies according to the size of the bump of the chip, the film has a thickness within a range of 10-50D so that various bumps can be accepted.
[80] After applying the NCA obtained through the said process on the organic substrate, the test chips in which the non-solder bump such as the gold stud bump is formed are aligned. Then, the flip chip bonding is performed by simultaneously applying heat, pressure and ultrasonic energy to the chips or applying only ultrasonic energy and pressure to the chips. The process for applying the NCA on the substrate is as follows. If the NCA is the film-type NCA, the NCA can apply on the substrate by removing the separation paper film after pre-compressing the surface having the film on the substrate with 5kgf/cm2 at 80°C. If the NCA is the paste-type NCA, the NCA can apply on the substrate with a constant amount in a desired shape by using a spraying apparatus or a screen printing apparatus. The alignment of the electrodes of the substrate and the bump of the chip is easily achieved because the NCA is relatively transparent.
[81] The temperature of the NCA can be raised much faster in the thermo-compression bonding process using the ultrasonic vibration or the compression process using the ultrasonic vibration as in the ACA ultrasonic bonding process than in the existing compression process. As a result, the curing of the NCA is rapidly accomplished only by the ultrasonic energy in the state that the heat is not applied from the external. In addition, differently from the case of applying the process pressure applied to the existing NCA thermo-compression bonding process as 100- 15Og per bump, although 20 to 7Og per bump is given, bonding resistance can be obtained by a stable NCA bonding so that the process pressure can be significantly reduced in the flip chip bonding using the NCA through the ultrasonic bonding process.
[82] FlG. 9 shows a bonding process between a flexible substrate and a rigid substrate by the ACA or NCA curing using the ultrasonic energy.
[83] For an electrical connection of the flexible substrate and the rigid substrate, a bonding method using ACF/ACP or NCF/NCP is on the rise from an existing method using a solder or a socket according to a tendency of a micro-pitch bonding method. For this reason, utilization of an adhesiveless-type flexible substrate such that a copper wiring is directly formed on polyimide base film is increased for the micro-pitch bonding. Furthermore, it is possible that the bonding is performed by using the ACA or the NCA even for the flexible substrate where the adhesive layer exists between the existing polyimide base film and the copper wiring. For this reason, in this embodiment, the adhesiveless-type flexible substrate having various pitches from a pitch of 200D to a pitch of 500D is provided, and a FR-4 substrate having a thickness of 1 mm is provided as the rigid substrate.
[84] A general thermosettable type would use the ACF of a thickness of 4OD as the interconnect material and the gold-plated nickel particle of 8D as the conductive particles. In order to apply the ultrasonic energy together with the process pressure during bonding between the flexible substrate and the rigid substrate, an ultrasonic bonding apparatus of the an OLD or PCB bonder method must be used, not a general flip chip bonder. That is, the curing of the ACF is induced by pre-compressing and applying the ACF to the bonding area of the rigid substrate and aligning between the electrodes of the flexible substrate and the electrodes of the rigid substrate, and then, applying the heat ultrasonic energy thereto upon the compression process. Further, the bonding between the flexible substrate and the rigid substrate is obtained by first pre- compressing the flexible substrate and the rigid substrate by the ACF with the general OLB or PCB bonder and then, applying the ultrasonic energy to the flexible substrate.
[85] The rigid substrate can be heated and the ultrasonic energy can be applied in a pulse way for the bonding process between the flexible substrate and the rigid substrate using the ACF that is effective and reliable. In addition, it is obvious that each of longitudinal ultrasonic energy and transversal ultrasonic energy can independently be used. Industrial Applicability
[86] The present invention is capable of removing a need to apply heat from the external or applying heat of relatively low temperature in a process for curing adhesives when bonding between electrical devices.
[87] Also, the present invention has an effect of lowering process pressure in the case of thermo-compression bonding process. As a result, the bonding process by the present invention is capable of improving yield and productivity and providing the bonding process of excellent adhesive strength and reliability.

Claims

Claims
[1] A method for bonding between electrical devices, comprising the steps of: aligning electrodes on a bonding area of an upper electrical device and a lower electrical device to be bonded; and
Curing of adhesives by applying ultrasonic energy to the adhesives between the upper electrical device and the lower electrical device and thus using the heat from the adhesive itself.
[2] The method for bonding between electrical devices as claimed in claim 1, wherein the adhesive is conductive adhesive or non-conductive adhesive.
[3] The method for bonding between electrical devices as claimed in claim 2, whereinthe conductive adhesive is isotropic conductive adhesive.
[4] The method for bonding between electrical devices as claimed in claim 3, whereinthe isotropic conductive adhesive includes, as conductive particles, one selected from a group consisting of silver, copper, gold, carbon, nickel, palladium, solder powder having a low melting point, and combinations thereof.
[5] The method for bonding between electrical devices as claimed in claim 3, wherein the isotropic conductive adhesive includes one resin selected from a group consisting of epoxy resin, polyester resin, acrylic resin, polyimide resin and poly sulfone resin.
[6] The method for bonding between electrical devices as claimed in claim 2, wherein the conductive adhesive is anisotropic conductive film or anisotropic conductive paste.
[7] The method for bonding between electrical devices as claimed in claim 6, wherein the conductive adhesive includes, as conductive particles, one selected from a group consisting of gold coated polymer particles, gold coated nickel particles, gold coated copper particles, low melting point solder layer coated nickel particles, low melting point solder layer coated copper particles, low melting point solder particles, and combinations thereof.
[8] The method for bonding between electrical devices as claimed in claim 7, wherein the conductive adhesive further includes non-conductive particles smaller in size than the conductive particles.
[9] The method for bonding between electrical devices as claimed in claim 7, wherein the conductive adhesive includes one resin selected from a group consisting of epoxy resin, polyester resin, acrylic resin, polyimide resin and poly sulfone resin.
[10] The method for bonding between electrical devices as claimed in claim 2, wherein the non-conductive adhesive is a non-conductive film or a non- conductive paste. [11] The method for bonding between electrical devices as claimed in claim 10, wherein the non-conductive adhesive includes non-conductive particles. [12] The method for bonding between electrical devices as claimed in claim 10, wherein the non-conductive adhesive includes one resin selected from a group consisting of epoxy resin, polyester resin, acrylic resin, polyimide resin and poly sulfone resin. [13] The method for bonding between electrical devices as claimed in claim 1, wherein the upper and the lower electrical devices are a semiconductor chip and a substrate, or a semiconductor chip and a semiconductor chip. [14] The method for bonding between electrical devices as claimed in claim 13, wherein the semiconductor chip is one semiconductor chip selected from a group consisting of a display driving circuit IC, an image sensor IC, a memory IC, a non-memory IC, an ultra high frequency or RF IC, a semiconductor IC having a silicon as main component and a compound semiconductor IC. [15] The method for bonding between electrical devices as claimed in claim 1, wherein the electrodes on a bonding area has one bump selected from a group consisting of a gold stud bump, a copper stud bump, a gold plating bump, a copper plating bump, an electroless nickel/gold bump and electroless nickel/ copper/gold bump. [16] The method for bonding between electrical devices as claimed in claim 1, wherein the upper and the lower electrical devices are a flexible substrate and a rigid substrate or a flexible substrate and a flexible substrate, or a rigid substrate and a rigid substrate. [17] The method for bonding between electrical devices as claimed in claim 16, wherein the flexible substrate indicates that a metal wiring is formed on polyimide base. [18] The method for bonding between electrical devices as claimed in claim 16, wherein the rigid substrate is a semiconductor substrate of epoxy/glass, ceramic, glass, or silicon. [19] The method for bonding between electrical devices as claimed in claim 1, wherein the ultrasonic is longitudinal ultrasonic vibration, horizontal ultrasonic vibration or combination thereof. [20] The method for bonding between electrical devices as claimed in claim 1, wherein when the ultrasonic energy is applied, heat is applied to all or some of upper and lower bonding area. [21] The method for bonding between electrical devices as claimed in claim 1, wherein the ultrasonic vibration frequency is 2OkHz to 6OkHz. [22] The method for bonding between electrical devices as claimed in claim 1, wherein the frequency and amplitude of the ultrasonic vibration vary in accordance with a degree of cure of the adhesive. [23] The method for bonding between electrical devices as claimed in claim 1, wherein the ultrasonic energy is constantly applied at a predetermined frequency for a defined time or in a pulse form.
PCT/KR2006/004912 2005-11-24 2006-11-22 Method for bonding between electrical devices using ultrasonic vibration WO2007061216A1 (en)

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KR20070025889A (en) 2007-03-08
CN101322233B (en) 2011-04-20

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