WO2007011380A3 - Substrate processing using molecular self-assembly - Google Patents
Substrate processing using molecular self-assembly Download PDFInfo
- Publication number
- WO2007011380A3 WO2007011380A3 PCT/US2005/033583 US2005033583W WO2007011380A3 WO 2007011380 A3 WO2007011380 A3 WO 2007011380A3 US 2005033583 W US2005033583 W US 2005033583W WO 2007011380 A3 WO2007011380 A3 WO 2007011380A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- assembly
- msas
- molecular self
- interface
- substrate processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A system for molecular self-assembly referred to herein as a 'molecular self-assembly system (MSAS)' includes at least one interface (204) configured to receive at least one substrate (200). The MSAS also includes at least one molecular self-assembly module (202) couped to the interface. The MSAS can also include one or more of pre-processing modules (201), other molecular self-assembly processing modules, and post-processing modules (203). Each module of the MSAS can contain at least one of a number of different processes as appropriate to a processing configuration of the MSAS. The MSAS also includes at least one handler (204a) coupled to the interface and configured to move the substrate between the interface and one or more of the modules.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61093704P | 2004-09-17 | 2004-09-17 | |
US60/610,937 | 2004-09-17 | ||
US11/132,817 | 2005-05-18 | ||
US11/132,841 | 2005-05-18 | ||
US11/132,841 US7749881B2 (en) | 2005-05-18 | 2005-05-18 | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
US11/132,817 US7390739B2 (en) | 2005-05-18 | 2005-05-18 | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007011380A2 WO2007011380A2 (en) | 2007-01-25 |
WO2007011380A3 true WO2007011380A3 (en) | 2009-04-09 |
Family
ID=37669272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/033583 WO2007011380A2 (en) | 2004-09-17 | 2005-09-19 | Substrate processing using molecular self-assembly |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2007011380A2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050281944A1 (en) * | 2004-06-17 | 2005-12-22 | Jang Bor Z | Fluid-assisted self-assembly of meso-scale particles |
US20060160250A1 (en) * | 2004-08-11 | 2006-07-20 | Cornell Research Foundation, Inc. | Modular fabrication systems and methods |
-
2005
- 2005-09-19 WO PCT/US2005/033583 patent/WO2007011380A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050281944A1 (en) * | 2004-06-17 | 2005-12-22 | Jang Bor Z | Fluid-assisted self-assembly of meso-scale particles |
US20060160250A1 (en) * | 2004-08-11 | 2006-07-20 | Cornell Research Foundation, Inc. | Modular fabrication systems and methods |
Also Published As
Publication number | Publication date |
---|---|
WO2007011380A2 (en) | 2007-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase |