WO2005114727A3 - Semiconductor die attachment for high vaccum tubes - Google Patents

Semiconductor die attachment for high vaccum tubes Download PDF

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Publication number
WO2005114727A3
WO2005114727A3 PCT/US2005/015086 US2005015086W WO2005114727A3 WO 2005114727 A3 WO2005114727 A3 WO 2005114727A3 US 2005015086 W US2005015086 W US 2005015086W WO 2005114727 A3 WO2005114727 A3 WO 2005114727A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor die
die attachment
high vaccum
tubes
vaccum tubes
Prior art date
Application number
PCT/US2005/015086
Other languages
French (fr)
Other versions
WO2005114727A2 (en
Inventor
Kenneth A Costello
Kevin J Roderick
Original Assignee
Intevac Inc
Kenneth A Costello
Kevin J Roderick
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc, Kenneth A Costello, Kevin J Roderick filed Critical Intevac Inc
Priority to JP2007513190A priority Critical patent/JP5539618B2/en
Priority to EP05742093.7A priority patent/EP1745506B1/en
Publication of WO2005114727A2 publication Critical patent/WO2005114727A2/en
Publication of WO2005114727A3 publication Critical patent/WO2005114727A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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Abstract

There is described novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.
PCT/US2005/015086 2004-05-14 2005-05-02 Semiconductor die attachment for high vaccum tubes WO2005114727A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007513190A JP5539618B2 (en) 2004-05-14 2005-05-02 Semiconductor mounting for ultra-high vacuum tubes
EP05742093.7A EP1745506B1 (en) 2004-05-14 2005-05-02 Semiconductor die attachment for high vacuum tubes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/846,060 2004-05-14
US10/846,060 US7012328B2 (en) 2004-05-14 2004-05-14 Semiconductor die attachment for high vacuum tubes

Publications (2)

Publication Number Publication Date
WO2005114727A2 WO2005114727A2 (en) 2005-12-01
WO2005114727A3 true WO2005114727A3 (en) 2006-02-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/015086 WO2005114727A2 (en) 2004-05-14 2005-05-02 Semiconductor die attachment for high vaccum tubes

Country Status (4)

Country Link
US (2) US7012328B2 (en)
EP (2) EP1745506B1 (en)
JP (1) JP5539618B2 (en)
WO (1) WO2005114727A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012328B2 (en) * 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7607560B2 (en) * 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US7772609B2 (en) * 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US7670872B2 (en) * 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US8283756B2 (en) * 2007-08-20 2012-10-09 Infineon Technologies Ag Electronic component with buffer layer
US7972885B1 (en) * 2008-09-25 2011-07-05 Banpil Photonics, Inc. Broadband imaging device and manufacturing thereof
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
CN101894901B (en) 2009-04-08 2013-11-20 硅谷光擎 Package for multiple light emitting diodes
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
WO2016086180A1 (en) 2014-11-26 2016-06-02 Ledengin, Inc. Compact emitter for warm dimming and color tunable lamp
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
CN112872720A (en) * 2021-01-07 2021-06-01 南京精准传感科技有限公司 Manufacturing process of brazed sensor sintering base
US11428531B1 (en) 2021-03-22 2022-08-30 Northrop Grumman Systems Corporation Diffusion block for an evacuated instrument system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350886A (en) * 1980-02-25 1982-09-21 Rockwell International Corporation Multi-element imager device
US6281572B1 (en) * 1997-12-05 2001-08-28 The Charles Stark Draper Laboratory, Inc. Integrated circuit header assembly
US6581640B1 (en) * 2000-08-16 2003-06-24 Kelsey-Hayes Company Laminated manifold for microvalve

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488444A1 (en) * 1980-08-08 1982-02-12 Thomson Csf SEMICONDUCTOR DEVICE USABLE IN HIGH FREQUENCY AND METHOD FOR MANUFACTURING THE SAME
US4379218A (en) * 1981-06-30 1983-04-05 International Business Machines Corporation Fluxless ion beam soldering process
FR2574239B1 (en) * 1984-11-30 1987-01-23 Labo Electronique Physique IMAGE SENSOR FOR CAMERA OPERATING IN DAY-NIGHT MODE
US4921157A (en) * 1989-03-15 1990-05-01 Microelectronics Center Of North Carolina Fluxless soldering process
US5090609A (en) * 1989-04-28 1992-02-25 Hitachi, Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
JPH02303676A (en) * 1989-05-17 1990-12-17 Hitachi Ltd Joining method by brazing material and treating device as well as semiconductor device
JPH06333987A (en) * 1993-05-18 1994-12-02 Hitachi Ltd Electric circuit junction device and electric circuit junction method
FR2705832B1 (en) * 1993-05-28 1995-06-30 Commissariat Energie Atomique Method for producing a sealing bead and mechanical strength between a substrate and a chip hybridized by balls on the substrate.
US5370301A (en) * 1994-01-04 1994-12-06 Texas Instruments Incorporated Apparatus and method for flip-chip bonding
JPH08139096A (en) * 1994-11-07 1996-05-31 Sony Corp Electronic component, mounting of electronic component and electronic component mounting device
US6614110B1 (en) * 1994-12-22 2003-09-02 Benedict G Pace Module with bumps for connection and support
US5612256A (en) * 1995-02-10 1997-03-18 Micron Display Technology, Inc. Multi-layer electrical interconnection structures and fabrication methods
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
JPH09129680A (en) * 1995-10-26 1997-05-16 Hitachi Ltd Semiconductor pellet and semiconductor device using the same
JPH1070153A (en) * 1996-08-26 1998-03-10 Hitachi Ltd Method for connecting electronic component
CA2213034C (en) * 1996-09-02 2002-12-17 Murata Manufacturing Co., Ltd. A semiconductor device with a passivation film
JP4098852B2 (en) * 1997-07-24 2008-06-11 浜松ホトニクス株式会社 Electron tube
US6020646A (en) * 1997-12-05 2000-02-01 The Charles Stark Draper Laboratory, Inc. Intergrated circuit die assembly
US5994784A (en) * 1997-12-18 1999-11-30 Micron Technology, Inc. Die positioning in integrated circuit packaging
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6586877B1 (en) * 1999-01-21 2003-07-01 Hamamatsu Photonics K.K. Electron tube
US6331753B1 (en) * 1999-03-18 2001-12-18 Litton Systems, Inc. Image intensifier tube
US6285018B1 (en) * 1999-07-20 2001-09-04 Intevac, Inc. Electron bombarded active pixel sensor
JP2001053074A (en) * 1999-08-05 2001-02-23 Seiko Epson Corp Semiconductor device and its manufacturer
US6642593B2 (en) * 1999-12-27 2003-11-04 Texas Instruments Incorporated Microelectromechanical switch
US6656768B2 (en) * 2001-02-08 2003-12-02 Texas Instruments Incorporated Flip-chip assembly of protected micromechanical devices
KR100407448B1 (en) * 2000-06-12 2003-11-28 가부시키가이샤 히타치세이사쿠쇼 Electronic apparatus and semiconductor device
KR100398716B1 (en) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 Semiconductor module and circuit substrate
US6507147B1 (en) * 2000-08-31 2003-01-14 Intevac, Inc. Unitary vacuum tube incorporating high voltage isolation
US6747258B2 (en) * 2001-10-09 2004-06-08 Itt Manufacturing Enterprises, Inc. Intensified hybrid solid-state sensor with an insulating layer
CN1445049A (en) * 2002-03-19 2003-10-01 日本胜利株式会社 Soldering tin paste, welding finished product and welding method
US7017795B2 (en) * 2003-11-03 2006-03-28 Indium Corporation Of America Solder pastes for providing high elasticity, low rigidity solder joints
US7012328B2 (en) 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7183641B2 (en) * 2005-03-30 2007-02-27 Intel Corporation Integrated heat spreader with intermetallic layer and method for making
US7224067B2 (en) * 2005-09-15 2007-05-29 Intel Corporation Intermetallic solder with low melting point

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350886A (en) * 1980-02-25 1982-09-21 Rockwell International Corporation Multi-element imager device
US6281572B1 (en) * 1997-12-05 2001-08-28 The Charles Stark Draper Laboratory, Inc. Integrated circuit header assembly
US6581640B1 (en) * 2000-08-16 2003-06-24 Kelsey-Hayes Company Laminated manifold for microvalve

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1745506A4 *

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EP3089208B1 (en) 2018-01-24
US20050253242A1 (en) 2005-11-17
EP3089208A1 (en) 2016-11-02
US20060113655A1 (en) 2006-06-01
EP1745506A4 (en) 2008-09-17
US7012328B2 (en) 2006-03-14
JP5539618B2 (en) 2014-07-02
WO2005114727A2 (en) 2005-12-01
JP2007537598A (en) 2007-12-20
US7608533B2 (en) 2009-10-27
EP1745506B1 (en) 2016-07-13
EP1745506A2 (en) 2007-01-24

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