WO2004023567A3 - Method of manufacturing a solar cell - Google Patents

Method of manufacturing a solar cell Download PDF

Info

Publication number
WO2004023567A3
WO2004023567A3 PCT/JP2003/011203 JP0311203W WO2004023567A3 WO 2004023567 A3 WO2004023567 A3 WO 2004023567A3 JP 0311203 W JP0311203 W JP 0311203W WO 2004023567 A3 WO2004023567 A3 WO 2004023567A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
semiconductor substrate
manufacturing
resistance
paste
Prior art date
Application number
PCT/JP2003/011203
Other languages
French (fr)
Other versions
WO2004023567A2 (en
Inventor
Takahiro Mishima
Naoki Ishikawa
Makiko Emoto
Original Assignee
Ebara Corp
Takahiro Mishima
Naoki Ishikawa
Makiko Emoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Takahiro Mishima, Naoki Ishikawa, Makiko Emoto filed Critical Ebara Corp
Priority to AU2003263592A priority Critical patent/AU2003263592A1/en
Publication of WO2004023567A2 publication Critical patent/WO2004023567A2/en
Publication of WO2004023567A3 publication Critical patent/WO2004023567A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A porous film having a resistance to etching is formed on a semiconductor substrate for a solar cell by using a paste. The semiconductor substrate having the porous film, which serves as a mask, is etched so as to form an antireflection structure having fine irregularities on the semiconductor substrate. The paste should preferably contain particles having an alkali resistance or an acid resistance.
PCT/JP2003/011203 2002-09-06 2003-09-02 Method of manufacturing a solar cell WO2004023567A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003263592A AU2003263592A1 (en) 2002-09-06 2003-09-02 Method of manufacturing a solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002261888A JP2004103736A (en) 2002-09-06 2002-09-06 Method for manufacturing photovoltaic cell
JP2002-261888 2002-09-06

Publications (2)

Publication Number Publication Date
WO2004023567A2 WO2004023567A2 (en) 2004-03-18
WO2004023567A3 true WO2004023567A3 (en) 2005-01-13

Family

ID=31973143

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/011203 WO2004023567A2 (en) 2002-09-06 2003-09-02 Method of manufacturing a solar cell

Country Status (3)

Country Link
JP (1) JP2004103736A (en)
AU (1) AU2003263592A1 (en)
WO (1) WO2004023567A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267897B (en) * 2005-11-10 2006-12-01 Tatung Co Substrate with anti-reflection layer and its manufacturing method
KR100964153B1 (en) 2006-11-22 2010-06-17 엘지전자 주식회사 Method of preparing solar cell and solar cell prepared thereby
JP2009070933A (en) * 2007-09-12 2009-04-02 Oji Paper Co Ltd Substrate for forming fine uneven surface structure having single particle film etching mask and manufacturing method thereof, and fine uneven surface structure
KR100971658B1 (en) 2008-01-03 2010-07-22 엘지전자 주식회사 Method for texturing of silicon solar cell
WO2009128324A1 (en) * 2008-04-17 2009-10-22 三菱電機株式会社 Method for roughening substrate surface and method for manufacturing photovoltaic device
CN102144302B (en) * 2008-09-05 2013-08-21 Lg化学株式会社 Paste and manufacturing methods of a solar cell using the same
KR101160115B1 (en) * 2009-05-29 2012-06-26 주식회사 효성 A fabricating method of buried contact solar cell
US8992786B2 (en) * 2010-04-30 2015-03-31 Corning Incorporated Anti-glare surface and method of making
FR2960562B1 (en) * 2010-05-31 2012-05-25 Saint Gobain Cristaux Et Detecteurs MONOCRYSTAL TEXTURE
WO2012024676A2 (en) 2010-08-20 2012-02-23 First Solar, Inc. Anti-reflective photovoltaic module
US8658454B2 (en) 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
DE102010044132A1 (en) * 2010-11-18 2012-05-24 Schott Ag Method for applying structure in surface of silicon wafer, involves applying mask base material to surface of solar cell, coating selected pattern with plunger, and contacting liquid etching medium with etching mask
DE102011084346A1 (en) 2011-10-12 2013-04-18 Schott Solar Ag Process for treating silicon wafers, treatment liquid and silicon wafers
CN102496660A (en) * 2011-12-30 2012-06-13 常州亿晶光电科技有限公司 Acid-base combined monocrystalline silicon solar cell texturing method
JP5864276B2 (en) * 2012-01-11 2016-02-17 和椿科技股▲フン▼有限公司 Manufacturing method of nano microstructure
CN103762259B (en) * 2014-01-21 2016-05-04 南通大学 A kind of corrugated solar cell silicon chip of lenticular lens type and manufacturing process thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407695A (en) * 1981-12-31 1983-10-04 Exxon Research And Engineering Co. Natural lithographic fabrication of microstructures over large areas
US4664748A (en) * 1984-11-01 1987-05-12 Fuji Electric Company Ltd. Surface roughening method
JPH0383339A (en) * 1989-08-28 1991-04-09 Sumitomo Electric Ind Ltd Formation of crystal silicon surface texture
JP2000196118A (en) * 1998-12-24 2000-07-14 Sanyo Electric Co Ltd Manufacture of solar battery
US6091021A (en) * 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407695A (en) * 1981-12-31 1983-10-04 Exxon Research And Engineering Co. Natural lithographic fabrication of microstructures over large areas
US4664748A (en) * 1984-11-01 1987-05-12 Fuji Electric Company Ltd. Surface roughening method
JPH0383339A (en) * 1989-08-28 1991-04-09 Sumitomo Electric Ind Ltd Formation of crystal silicon surface texture
US6091021A (en) * 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
JP2000196118A (en) * 1998-12-24 2000-07-14 Sanyo Electric Co Ltd Manufacture of solar battery

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0152, no. 58 (E - 1084) 28 June 1991 (1991-06-28) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 10 17 November 2000 (2000-11-17) *

Also Published As

Publication number Publication date
WO2004023567A2 (en) 2004-03-18
AU2003263592A1 (en) 2004-03-29
AU2003263592A8 (en) 2004-03-29
JP2004103736A (en) 2004-04-02

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