WO2003084006A3 - Laser system - Google Patents

Laser system Download PDF

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Publication number
WO2003084006A3
WO2003084006A3 PCT/DK2003/000213 DK0300213W WO03084006A3 WO 2003084006 A3 WO2003084006 A3 WO 2003084006A3 DK 0300213 W DK0300213 W DK 0300213W WO 03084006 A3 WO03084006 A3 WO 03084006A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
diode member
light beam
output beams
reflective members
Prior art date
Application number
PCT/DK2003/000213
Other languages
French (fr)
Other versions
WO2003084006A2 (en
Inventor
Martin Egede Nielsen
Niels-Soeren Boegh
Original Assignee
Esko Graphics As
Martin Egede Nielsen
Niels-Soeren Boegh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Esko Graphics As, Martin Egede Nielsen, Niels-Soeren Boegh filed Critical Esko Graphics As
Priority to EP03745252A priority Critical patent/EP1490934A2/en
Priority to AU2003226910A priority patent/AU2003226910A1/en
Priority to JP2003581311A priority patent/JP2005522039A/en
Publication of WO2003084006A2 publication Critical patent/WO2003084006A2/en
Publication of WO2003084006A3 publication Critical patent/WO2003084006A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/148—External cavity lasers using a Talbot cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

A laser system for generating a least two output beams comprising a laser multimode diode member (101) emitting a light beam with an intensity distribution comprising a plurality of spatial modes. A dual feedback cavity is provided by first and second selection means (108,110,111) for selecting corresponding to one of said plurality of spatial modes on opposite sides of the optical axis; and first and second reflective members (106,112) where the laser diode member and the reflective members define a dual cavity and are adapted to reflect corresponding feedback fractions of the selected parts of the emitted light beam back into the laser diode member and to produce respective output beams (113,114).
PCT/DK2003/000213 2002-04-03 2003-04-02 Laser system WO2003084006A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03745252A EP1490934A2 (en) 2002-04-03 2003-04-02 Laser system
AU2003226910A AU2003226910A1 (en) 2002-04-03 2003-04-02 Laser system
JP2003581311A JP2005522039A (en) 2002-04-03 2003-04-02 Laser system, laser system alignment method, use of laser system, and internal drum image setting system

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DKPA200200489 2002-04-03
DKPA200200489 2002-04-03
DKPA200201889 2002-12-10
DKPA200201889 2002-12-10

Publications (2)

Publication Number Publication Date
WO2003084006A2 WO2003084006A2 (en) 2003-10-09
WO2003084006A3 true WO2003084006A3 (en) 2003-12-31

Family

ID=28676333

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2003/000213 WO2003084006A2 (en) 2002-04-03 2003-04-02 Laser system

Country Status (5)

Country Link
EP (1) EP1490934A2 (en)
JP (1) JP2005522039A (en)
CN (1) CN1659753A (en)
AU (1) AU2003226910A1 (en)
WO (1) WO2003084006A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1756922B1 (en) 2004-06-16 2008-07-09 Danmarks Tekniske Universitet Segmented diode laser system
JP4671017B2 (en) * 2004-07-12 2011-04-13 ソニー株式会社 Semiconductor laser device
DE102004053136B4 (en) * 2004-10-29 2008-04-03 Raab, Volker, Dr. Laser resonator with internal beam splitter
WO2007068245A1 (en) 2005-12-16 2007-06-21 Danmarks Tekniske Universitet Laser system with segmented diode laser
CN100379104C (en) * 2006-03-31 2008-04-02 中国科学院上海光学精密机械研究所 Laser diode array dual feedback external cavity laser
DE102008012028A1 (en) * 2008-02-29 2009-09-10 Fachhochschule Trier Device for laser Doppler velocity measurement
CN101752773B (en) * 2008-12-05 2012-10-24 北京中视中科光电技术有限公司 Laser head
JP6145275B2 (en) * 2013-01-29 2017-06-07 アルファクス株式会社 Laser beam profile measurement method
JP6268004B2 (en) * 2014-03-12 2018-01-24 浜松ホトニクス株式会社 Semiconductor laser device
CN106602394B (en) * 2017-01-19 2019-02-12 吉林大学 A kind of resonance cavity system of Dynamic Optical Fiber grating and optical fiber Bragg raster composition
US20220052503A1 (en) * 2020-08-11 2022-02-17 II-VI Delaware, Inc Fiber Amplifier Having Dual Output Laser Diode
US11652332B2 (en) * 2020-08-11 2023-05-16 II-VI Delaware, Inc Dual output laser diode
CN112817008B (en) * 2020-12-29 2023-03-10 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） Dual-waveband single-photon three-dimensional detection system
US11728613B2 (en) * 2021-01-25 2023-08-15 Ii-Vi Delaware, Inc. Doped fiber amplifier having pass-through pump laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995050A (en) * 1989-11-17 1991-02-19 Spectra Diode Laboratories, Inc. Diode laser with external lens cavity
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
WO2002021651A1 (en) * 2000-09-05 2002-03-14 Esko-Graphics A/S Laser system with external optical feedback and use of such system in the graphical industry

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995050A (en) * 1989-11-17 1991-02-19 Spectra Diode Laboratories, Inc. Diode laser with external lens cavity
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
WO2002021651A1 (en) * 2000-09-05 2002-03-14 Esko-Graphics A/S Laser system with external optical feedback and use of such system in the graphical industry

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JENSEN S J ET AL: "STABILITY OF THE SINGLE-MODE OUTPUT OF A LASER DIODE ARRAY WITH PHASE CONJUGATE FEEDBACK", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 76, no. 5, 31 January 2000 (2000-01-31), pages 535 - 537, XP000934642, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
JP2005522039A (en) 2005-07-21
AU2003226910A8 (en) 2003-10-13
AU2003226910A1 (en) 2003-10-13
WO2003084006A2 (en) 2003-10-09
CN1659753A (en) 2005-08-24
EP1490934A2 (en) 2004-12-29

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