WO2003067720A3 - Laser device comprising a quantum cascade laser - Google Patents

Laser device comprising a quantum cascade laser Download PDF

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Publication number
WO2003067720A3
WO2003067720A3 PCT/EP2002/014017 EP0214017W WO03067720A3 WO 2003067720 A3 WO2003067720 A3 WO 2003067720A3 EP 0214017 W EP0214017 W EP 0214017W WO 03067720 A3 WO03067720 A3 WO 03067720A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum cascade
laser
cascade laser
pulse generator
laser device
Prior art date
Application number
PCT/EP2002/014017
Other languages
German (de)
French (fr)
Other versions
WO2003067720A2 (en
Inventor
Armin Lambrecht
Thomas Beyer
Marcus Braun
Original Assignee
Fraunhofer Ges Forschung
Armin Lambrecht
Thomas Beyer
Marcus Braun
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung, Armin Lambrecht, Thomas Beyer, Marcus Braun filed Critical Fraunhofer Ges Forschung
Publication of WO2003067720A2 publication Critical patent/WO2003067720A2/en
Publication of WO2003067720A3 publication Critical patent/WO2003067720A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Lasers (AREA)

Abstract

The invention relates to a laser device and corresponding applications. Said device comprises a quantum cascade laser (7) and a pulse generator for the pulsed operation of the quantum cascade laser. The invention is characterised in that the quantum cascade laser (7) can be operated by the pulse generator by means of pulse packets, which use frequencies ranging between 1 Hz and 100 kHz, and that a heat dissipation device (8) is connected to the quantum cascade laser (7). Cost-effective Fabry-Perot lasers can be used as the quantum cascade laser. A special control method enables a partially coherent, LED-type emission.
PCT/EP2002/014017 2002-02-08 2002-12-10 Laser device comprising a quantum cascade laser WO2003067720A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10205310A DE10205310B4 (en) 2002-02-08 2002-02-08 A method for generating the effect of a broadband incoherent LED-like light source and use of such a method in a gas measuring device and in a lighting device
DE10205310.3 2002-02-08

Publications (2)

Publication Number Publication Date
WO2003067720A2 WO2003067720A2 (en) 2003-08-14
WO2003067720A3 true WO2003067720A3 (en) 2003-10-02

Family

ID=27674589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/014017 WO2003067720A2 (en) 2002-02-08 2002-12-10 Laser device comprising a quantum cascade laser

Country Status (2)

Country Link
DE (1) DE10205310B4 (en)
WO (1) WO2003067720A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535656B2 (en) 2005-06-15 2009-05-19 Daylight Solutions, Inc. Lenses, optical sources, and their couplings
US7492806B2 (en) 2005-06-15 2009-02-17 Daylight Solutions, Inc. Compact mid-IR laser
US7920608B2 (en) * 2007-03-12 2011-04-05 Daylight Solutions, Inc. Quantum cascade laser suitable for portable applications
US7848382B2 (en) 2008-01-17 2010-12-07 Daylight Solutions, Inc. Laser source that generates a plurality of alternative wavelength output beams
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
US8718105B2 (en) 2010-03-15 2014-05-06 Daylight Solutions, Inc. Laser source that generates a rapidly changing output beam
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
WO2012006346A1 (en) 2010-07-07 2012-01-12 Daylight Solutions, Inc. Multi-wavelength high output laser source assembly with precision output beam
US9225148B2 (en) 2010-09-23 2015-12-29 Daylight Solutions, Inc. Laser source assembly with thermal control and mechanically stable mounting
US8467430B2 (en) 2010-09-23 2013-06-18 Daylight Solutions, Inc. Continuous wavelength tunable laser source with optimum orientation of grating and gain medium
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
US9625671B2 (en) 2013-10-23 2017-04-18 Lasermax, Inc. Laser module and system
US9859680B2 (en) 2013-12-17 2018-01-02 Lasermax, Inc. Shock resistant laser module
CN111766220A (en) * 2020-07-28 2020-10-13 中煤科工集团重庆研究院有限公司 Methane gas detection photoelectric detection module and detection device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344705A (en) * 1979-03-07 1982-08-17 Endress U. Hauser Gmbh U. Co. Distance measuring apparatus based on the pulse travel time method
US4535458A (en) * 1981-05-01 1985-08-13 Nippon Infrared Industries Co., Ltd. Laser apparatus
EP0797280A1 (en) * 1996-03-20 1997-09-24 Lucent Technologies Inc. Article comprising an improved quantum cascade laser
EP0877454A1 (en) * 1997-05-07 1998-11-11 Lucent Technologies Inc. Article comprising an improved QC laser
US5895984A (en) * 1995-12-13 1999-04-20 Leica Geosystems Ag Circuit arrangement for feeding a pulse output stage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10015615C2 (en) * 2000-03-29 2002-07-11 Draegerwerk Ag Gas Detection System
US6563852B1 (en) * 2000-05-08 2003-05-13 Lucent Technologies Inc. Self-mode-locking quantum cascade laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344705A (en) * 1979-03-07 1982-08-17 Endress U. Hauser Gmbh U. Co. Distance measuring apparatus based on the pulse travel time method
US4535458A (en) * 1981-05-01 1985-08-13 Nippon Infrared Industries Co., Ltd. Laser apparatus
US5895984A (en) * 1995-12-13 1999-04-20 Leica Geosystems Ag Circuit arrangement for feeding a pulse output stage
EP0797280A1 (en) * 1996-03-20 1997-09-24 Lucent Technologies Inc. Article comprising an improved quantum cascade laser
EP0877454A1 (en) * 1997-05-07 1998-11-11 Lucent Technologies Inc. Article comprising an improved QC laser

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
FAIST J ET AL: "Room temperature mid-infrared quantum cascade lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 6, 14 March 1996 (1996-03-14), pages 560 - 561, XP006004906, ISSN: 0013-5194 *
KOSTEREV A A ET AL: "TRACE-GAS DETECTION IN AMBIENT AIR WITH A THERMOELECTRICALLY COOLED, PULSED QUANTUM-CASCADE DISTRIBUTED FEEDBACK LASER", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, vol. 39, no. 36, 20 December 2000 (2000-12-20), pages 6866 - 6872, XP001015092, ISSN: 0003-6935 *
MARTINI R ET AL: "HIGH DUTY CYCLE OPERATION OF QUANTUM CASCADE LASERS BASED ON GRADED SUPERLATTICE ACTIVE REGIONS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 12, 15 June 2001 (2001-06-15), pages 7735 - 7738, XP001066066, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
DE10205310B4 (en) 2010-04-15
WO2003067720A2 (en) 2003-08-14
DE10205310A1 (en) 2003-09-18

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