WO2003027002A3 - Method for the production of a micromechanical structure - Google Patents

Method for the production of a micromechanical structure Download PDF

Info

Publication number
WO2003027002A3
WO2003027002A3 PCT/DE2002/002111 DE0202111W WO03027002A3 WO 2003027002 A3 WO2003027002 A3 WO 2003027002A3 DE 0202111 W DE0202111 W DE 0202111W WO 03027002 A3 WO03027002 A3 WO 03027002A3
Authority
WO
WIPO (PCT)
Prior art keywords
micromechanical structure
micromechanical
production
opposed
temperature range
Prior art date
Application number
PCT/DE2002/002111
Other languages
German (de)
French (fr)
Other versions
WO2003027002A2 (en
Inventor
Frank Fischer
Lars Metzger
Original Assignee
Bosch Gmbh Robert
Frank Fischer
Lars Metzger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10142952A external-priority patent/DE10142952A1/en
Application filed by Bosch Gmbh Robert, Frank Fischer, Lars Metzger filed Critical Bosch Gmbh Robert
Publication of WO2003027002A2 publication Critical patent/WO2003027002A2/en
Publication of WO2003027002A3 publication Critical patent/WO2003027002A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Abstract

The invention relates to a method for the production of a micromechanical structure, comprising the following steps: a micromechanical structure is provided with a first micromechanical structural element (MS) made of a first material and a second micromechanical structure element (OS) made of a second material; a gaseous etching medium (G) is conducted over the micromechanical structure, said etching medium (G) being constituted in such a way that it etches the second material selectively as opposed to the first material in a first temperature range above room temperature; the micromechanical structure is brought to the first temperature range for selective etching of the second material as opposed to the first material.
PCT/DE2002/002111 2001-09-01 2002-06-10 Method for the production of a micromechanical structure WO2003027002A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10142952.5 2001-09-01
DE10142952A DE10142952A1 (en) 2001-06-13 2001-09-01 Production of micromechanical structure used as sensor or actuator comprises preparing micromechanical structure with micromechnical structural elements, and selectively etching

Publications (2)

Publication Number Publication Date
WO2003027002A2 WO2003027002A2 (en) 2003-04-03
WO2003027002A3 true WO2003027002A3 (en) 2003-10-16

Family

ID=7697428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002111 WO2003027002A2 (en) 2001-09-01 2002-06-10 Method for the production of a micromechanical structure

Country Status (1)

Country Link
WO (1) WO2003027002A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
WO2000042231A2 (en) * 1999-01-15 2000-07-20 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
WO2000042231A2 (en) * 1999-01-15 2000-07-20 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBA Y ET AL: "PATTERN FABRICATION TECHNIQUE FOR TA-GE AMORPHOUS X-RAY ABSORBER ONA SIC MEMBRANE BY INDUCTIVELY COUPLED PLASMA", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 38, no. 4A, PART 1, April 1999 (1999-04-01), pages 2164 - 2168, XP000906668, ISSN: 0021-4922 *
KAMINS T I ET AL: "INFLUENCE OF HCI ON THE CHEMICAL VAPOR DEPOSITION AND ETCHING OF GEISLANDS ON SI(001)", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 13, 28 September 1998 (1998-09-28), pages 1862 - 1864, XP000784180, ISSN: 0003-6951 *
LI B ET AL: "APPLICATIONS OF GERMANIUM TO LOW TEMPERATURE MICRO-MACHINING", TECHNICAL DIGEST OF THE IEEE INTERNATIONAL MEMS '99 CONFERENCE. 12TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. ORLANDO, FL, JAN. 17 - 21, 1999, IEEE INTERNATIONAL MICRO ELECTRO MECHANICAL SYSTEMS CONFERENCE, NEW YORK, NY: IEE, 1999, pages 638 - 643, XP000830821, ISBN: 0-7803-5195-9 *

Also Published As

Publication number Publication date
WO2003027002A2 (en) 2003-04-03

Similar Documents

Publication Publication Date Title
GR1004040B (en) Method for the fabrication of suspended porous silicon microstructures and application in gas sensors
WO2002095800A3 (en) A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
WO2005017975A3 (en) Anchors for microelectromechanical systems having an soi substrate, and method of fabricating same
WO2009080615A3 (en) Process for the production of microelectromechanical systems
AU2001241629A1 (en) Flow control of process gas in semiconductor manufacturing
IS5884A (en) Method for the production of pure citalopram
WO2005051863A3 (en) Insulation material
AU2002330851A1 (en) Functionalized fullerenes, their method of manufacture and uses thereof
EP1352681A4 (en) Hollow fiber membrane module, method of manufacturing the hollow fiber membrane module, and housing for hollow fiber membrane module
AU2001281618A1 (en) Foam element having molded gas passageways and process for production thereof
WO2002051741A3 (en) Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method
WO2004055885A3 (en) Encapsulation of mems devices using pillar-supported caps
EP1316626A3 (en) Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
AU2001266315A1 (en) Air filter element and method of producing the same
WO2002096898A3 (en) Process for the preparation of prostaglandins and analogues thereof
WO2002081363A3 (en) Method for producing a semiconductor component and a semiconductor component produced according to this method
AU2003284662A1 (en) Method of manufacturing micro structure, and method of manufacturing mold material
AU2003228106A1 (en) Fire retardant resin composition, method of its production, shaped articles comprising the same, and silica
AU2002254393A1 (en) Type of lettuce and methods of production
PL364600A1 (en) Method for the production of hydrogen and applications thereof
WO2004071941A3 (en) Method for producing a micromechanical device and a micromechanical device
WO2003027002A3 (en) Method for the production of a micromechanical structure
AU2003254882A1 (en) Micro switching element and method of manufacturing the element
ATE304736T1 (en) MICRO-ELECTROMECHANICAL SYSTEM AND METHOD FOR THE PRODUCTION THEREOF
WO2004028956A3 (en) Method and micromechanical component

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP