WO2003019643A1 - Semiconductor device having high-permittivity insulation film and production method therefor - Google Patents

Semiconductor device having high-permittivity insulation film and production method therefor Download PDF

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Publication number
WO2003019643A1
WO2003019643A1 PCT/JP2002/008453 JP0208453W WO03019643A1 WO 2003019643 A1 WO2003019643 A1 WO 2003019643A1 JP 0208453 W JP0208453 W JP 0208453W WO 03019643 A1 WO03019643 A1 WO 03019643A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulation film
semiconductor device
production method
method therefor
permittivity insulation
Prior art date
Application number
PCT/JP2002/008453
Other languages
French (fr)
Japanese (ja)
Inventor
Heiji Watanabe
Haruhiko Ono
Nobuyuki Ikarashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US10/477,109 priority Critical patent/US7164169B2/en
Priority to JP2003522997A priority patent/JP4120938B2/en
Publication of WO2003019643A1 publication Critical patent/WO2003019643A1/en
Priority to US11/608,078 priority patent/US7495264B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31637—Deposition of Tantalum oxides, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A semiconductor device comprising a substrate, and an insulation film formed directly or indirectly on the substrate. The insulation film contains a metal silicate film, and a silicon concentration in the metal silicate film is higher at the film-thickness-direction center than at upper and lower portions thereof.
PCT/JP2002/008453 2001-08-23 2002-08-22 Semiconductor device having high-permittivity insulation film and production method therefor WO2003019643A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/477,109 US7164169B2 (en) 2001-08-23 2002-08-22 Semiconductor device having high-permittivity insulation film and production method therefor
JP2003522997A JP4120938B2 (en) 2001-08-23 2002-08-22 Semiconductor device having high dielectric constant insulating film and manufacturing method thereof
US11/608,078 US7495264B2 (en) 2001-08-23 2006-12-07 Semiconductor device with high dielectric constant insulating film and manufacturing method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-252258 2001-08-23
JP2001252258 2001-08-23

Publications (1)

Publication Number Publication Date
WO2003019643A1 true WO2003019643A1 (en) 2003-03-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008453 WO2003019643A1 (en) 2001-08-23 2002-08-22 Semiconductor device having high-permittivity insulation film and production method therefor

Country Status (4)

Country Link
US (2) US7164169B2 (en)
JP (1) JP4120938B2 (en)
CN (1) CN1261986C (en)
WO (1) WO2003019643A1 (en)

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JP2004304053A (en) * 2003-03-31 2004-10-28 Fujitsu Ltd Semiconductor device and its manufacturing method
JP2005191482A (en) * 2003-12-26 2005-07-14 Semiconductor Leading Edge Technologies Inc Semiconductor device and its manufacturing method
WO2005071723A1 (en) * 2004-01-21 2005-08-04 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device and substrate processing system
JP2006054382A (en) * 2004-08-16 2006-02-23 Sony Corp Metallic silicate film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
WO2006057400A1 (en) * 2004-11-29 2006-06-01 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing equipment
JP2007514293A (en) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド System and method for forming a multi-component dielectric film
US7858536B2 (en) 2002-01-08 2010-12-28 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing semiconductor device
CN102446700A (en) * 2010-09-30 2012-05-09 中国科学院微电子研究所 Method for improving silicon substrate and obtained silicon substrate
JP2013138213A (en) * 2005-11-09 2013-07-11 Advanced Micro Devices Inc Replacement gate transistors with reduced gate oxide leakage
US10125096B2 (en) 2007-05-10 2018-11-13 Plastipak Packaging, Inc. Oxygen scavenging molecules, articles containing same, and methods of their use
US10923560B2 (en) 2018-02-15 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Capacitor including electrode and dielectric layer each containing silicon, and method for manufacturing capacitor

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US7504700B2 (en) * 2005-04-21 2009-03-17 International Business Machines Corporation Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
JPWO2007043709A1 (en) * 2005-10-14 2009-04-23 日本電気株式会社 Semiconductor device manufacturing method and manufacturing apparatus thereof
KR100924195B1 (en) * 2007-09-18 2009-10-29 주식회사 하이닉스반도체 Semicoductor device and method of fabricating the same
US8012822B2 (en) * 2007-12-27 2011-09-06 Canon Kabushiki Kaisha Process for forming dielectric films
WO2009094570A2 (en) * 2008-01-24 2009-07-30 Applied Materials, Inc. Plating through tunnel dielectrics for solar cell contact formation
US20100186808A1 (en) * 2009-01-27 2010-07-29 Peter Borden Plating through tunnel dielectrics for solar cell contact formation
JP2014053571A (en) 2012-09-10 2014-03-20 Toshiba Corp Ferroelectric memory and method of manufacturing the same

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US7858536B2 (en) 2002-01-08 2010-12-28 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing semiconductor device
JP4691873B2 (en) * 2003-03-31 2011-06-01 富士通株式会社 Semiconductor device and manufacturing method thereof
JP2004304053A (en) * 2003-03-31 2004-10-28 Fujitsu Ltd Semiconductor device and its manufacturing method
JP2007514293A (en) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド System and method for forming a multi-component dielectric film
JP2005191482A (en) * 2003-12-26 2005-07-14 Semiconductor Leading Edge Technologies Inc Semiconductor device and its manufacturing method
US7531467B2 (en) 2004-01-21 2009-05-12 Hitachi Kokusai Electric, Inc. Manufacturing method of semiconductor device and substrate processing apparatus
CN100447962C (en) * 2004-01-21 2008-12-31 株式会社日立国际电气 Method for manufacturing semiconductor device and substrate processing system
WO2005071723A1 (en) * 2004-01-21 2005-08-04 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device and substrate processing system
JP2006054382A (en) * 2004-08-16 2006-02-23 Sony Corp Metallic silicate film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
US7723245B2 (en) 2004-11-29 2010-05-25 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device, and substrate processing apparatus
JP4512098B2 (en) * 2004-11-29 2010-07-28 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JPWO2006057400A1 (en) * 2004-11-29 2008-06-05 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
WO2006057400A1 (en) * 2004-11-29 2006-06-01 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing equipment
JP2013138213A (en) * 2005-11-09 2013-07-11 Advanced Micro Devices Inc Replacement gate transistors with reduced gate oxide leakage
US10125096B2 (en) 2007-05-10 2018-11-13 Plastipak Packaging, Inc. Oxygen scavenging molecules, articles containing same, and methods of their use
US10906870B2 (en) 2007-05-10 2021-02-02 Plastipak Packaging, Inc. Oxygen scavenging molecules, articles containing same, and methods of their use
CN102446700A (en) * 2010-09-30 2012-05-09 中国科学院微电子研究所 Method for improving silicon substrate and obtained silicon substrate
CN102446700B (en) * 2010-09-30 2015-11-11 中国科学院微电子研究所 A kind of method improving silicon substrate
US10923560B2 (en) 2018-02-15 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Capacitor including electrode and dielectric layer each containing silicon, and method for manufacturing capacitor

Also Published As

Publication number Publication date
CN1261986C (en) 2006-06-28
US20040171276A1 (en) 2004-09-02
JP4120938B2 (en) 2008-07-16
US20070090450A1 (en) 2007-04-26
CN1507654A (en) 2004-06-23
US7495264B2 (en) 2009-02-24
JPWO2003019643A1 (en) 2004-12-16
US7164169B2 (en) 2007-01-16

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