WO2002015654A1 - Mounting method and mounting device - Google Patents

Mounting method and mounting device Download PDF

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Publication number
WO2002015654A1
WO2002015654A1 PCT/JP2001/006551 JP0106551W WO0215654A1 WO 2002015654 A1 WO2002015654 A1 WO 2002015654A1 JP 0106551 W JP0106551 W JP 0106551W WO 0215654 A1 WO0215654 A1 WO 0215654A1
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WO
WIPO (PCT)
Prior art keywords
conductive paste
cleaning
energy
bonded
electrodes
Prior art date
Application number
PCT/JP2001/006551
Other languages
French (fr)
Japanese (ja)
Inventor
Akira Yamauchi
Original Assignee
Toray Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Engineering Co., Ltd. filed Critical Toray Engineering Co., Ltd.
Publication of WO2002015654A1 publication Critical patent/WO2002015654A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Definitions

  • the present invention relates to a mounting method and a mounting apparatus for bonding objects to be bonded provided with electrodes (for example, a chip and a substrate).
  • electrodes for example, a chip and a substrate.
  • an object to be bonded having electrodes for example, a chip having a bump formed as an electrode and a substrate are bonded to each other, for example, a bonding method by heating.
  • the electrodes are cleaned prior to bonding, and after cleaning, a non-conductive paste is applied to ensure the sealability of the bonded parts after bonding, as well as the reliability of bonding and the bonding of the electrodes during bonding.
  • a method of applying a flux before joining to remove oxides is known.
  • the electrode of the object to be bonded is washed to prevent primary oxidation and then the time until the application of the non-conductive paste or flux is long, the electrode of the object to be bonded, for example, a solder bump, May be oxidized.
  • an object of the present invention is to efficiently prevent primary oxidation and secondary oxidation of an electrode of an object to be bonded and to achieve fluxless bonding, and to realize an efficient mounting in which the process can be simplified. It is to provide a method and a mounting device.
  • a mounting method at the time of joining objects to be bonded provided with electrodes, at least one of the electrodes of the object is irradiated with energy waves or energy particles. Immediately after the cleaning, a non-conductive paste is applied, and then the two objects are joined.
  • the non-conductive paste can be applied at the same position as the cleaning. Or at least one contacted
  • the object to be bonded and the means for irradiating the energy wave or the energy particles are relatively moved, for example, the relative movement in the horizontal direction is performed. It can also be washed while keeping it.
  • the non-conductive paste may be applied immediately after the cleaning at the position after the relative movement.
  • one of the objects to be bonded is a substrate or a chip on which solder bumps as electrodes are formed, and the solder bumps are cleaned by irradiating them with energy waves or energy particles.
  • a non-conductive paste is applied on the object, and thereafter, the solder bump of the object is connected to the electrode of the other object. It is a method of matching.
  • the other object to be bonded is either a chip or a substrate whose electrode is formed by a gold bump, or a substrate or a chip having a solder bump formed as an electrode similarly to the one object to be bonded. Is also good.
  • the solder bump on the other object is also cleaned immediately after being irradiated with energy waves or energy particles, at the same position, or at a position after the relative movement.
  • a non-conductive paste may be applied onto the object to be bonded, and then the solder bumps of both objects may be bonded.
  • the combination of the solder bump formed substrate and the gold bump formed chip, the solder bump formed chip and the gold bump formed substrate Combination, and further, bonding in a combination of a chip on which solder bumps are formed and a chip on which gold bumps are formed, and the like are possible.
  • a bonding method typically, heating bonding using a heater or the like can be applied, but not limited thereto, and ultrasonic bonding using ultrasonic waves can also be applied.
  • electrode refers to an electrode which is formed in a flat shape at the same level as or slightly higher than the surface of an object to be bonded, and It is a concept that includes a so-called bump form formed on the surface of an object so as to protrude in a convex shape. Therefore, the bonding between electrodes is a concept that includes the bonding between bumps and the bonding between bumps and flat electrodes.
  • plasma, ion beam, atomic beam, radical beam, laser, or the like can be used.Atmospheric pressure plasma is used particularly in view of cleaning effect and simplification of the device configuration. Is preferred. For atmospheric pressure plasma, it is desirable to apply a voltage in the tube so as not to charge the workpiece.
  • a mounting apparatus is a mounting apparatus for joining objects to be joined provided with electrodes, and means for cleaning at least one of the electrodes of the objects by irradiating the electrodes with energy waves or energy particles.
  • a cleaning means and a non-conductive paste coating means which can be moved substantially integrally.
  • the above-mentioned cleaning means is preferably configured to be a means that can be relatively moved with respect to the article to be cleaned, whereby desired cleaning can be performed while being relatively moved.
  • the means for applying the non-conductive paste can be configured as a means that can be relatively moved with respect to the workpiece.
  • the non-conductive paste applying means is arranged at a fixed distance from the above-mentioned cleaning means, it can be moved substantially integrally with the cleaning means and can be moved relative to the workpiece.
  • the coating means of the non-conductive base may be configured to be movable relative to the object to be bonded independently of the cleaning means after the cleaning by the cleaning means.
  • the cleaning means which has completed the cleaning may move integrally with the non-conductive paste applying means. In this way, the position of the cleaning means and the means of applying the non-conductive paste are adjusted substantially by being integrally moved, so that the non-conductive paste can be applied at the same position immediately after the cleaning. become.
  • the cleaning means and the means for applying the non-conductive paste are integrally movable so as to have a predetermined positional relationship. Immediately after the cleaning, a nonconductive paste can be applied at a position after the relative movement.
  • the purpose of cleaning by irradiating energy waves or energy particles is to remove contaminants (contamination) existing on the surface.
  • contamination refers to adhesion to a substrate electrode or the like. Organic matter, oxides and other impurities.
  • the joint in the present invention is formed of ordinary lead / The concept includes a joint made of what is called an alternative solder, such as tin / silver, Bi / In, and a joint made of gold / tin and gold-Z gold, in addition to a joint made of tin solder.
  • the electrode in the present invention includes not only an electrode with an electric wiring but also a dummy electrode without an electric wiring.
  • the chip in the present invention refers to everything on the side to be joined to the substrate, for example, IC chip, semiconductor chip, optical element, surface mount component, wafer, etc. irrespective of the type and size.
  • substrate means, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like, irrespective of the type and size thereof, everything on the side joined to the chip.
  • the non-conductive paste is applied immediately after the electrode is cleaned, it is not left for a long time before the paste is applied after the cleaning.
  • the coating with the non-conductive paste reliably prevents the primary oxidation of the washed electrode.
  • the non-conductive paste is applied immediately after the cleaning at the same position as the cleaning or immediately after the relative movement, the positional accuracy of the coating is easily secured, and the cleaned electrode is A precise non-conductive paste is applied to ensure that it is covered.
  • the objects to be joined are joined together (for example, by heat joining), so that the electrode covered with the non-conductive paste immediately after washing has no chance to come into contact with the surrounding atmosphere until joining, and the secondary Oxidation will also be prevented.
  • the electrode surface immediately after cleaning with a non-conductive paste as described above, not only prevention of oxidation but also a reaction with a metal surface other than oxidation or an undesired one that hinders a subsequent bonding step is undesirable. Adhesion of foreign substances and reactants (for example, adsorption of CO, etc.) can be prevented. Therefore, fluxless joining becomes possible, and by using fluxless, a series of steps until joining is completed is greatly simplified.
  • a non-conductive paste is applied substantially simultaneously with the cleaning. Since the secondary oxidation is prevented, it is not necessary to consider the time until the bonding process. As a result, for example, it is possible to stock in a state where a non-conductive paste is applied, and it is possible to provide a buffer in a series of production processes as necessary.
  • FIG. 1 is a schematic configuration diagram of a mounting device according to an embodiment of the present invention.
  • FIG. 2 is an enlarged schematic side view showing a state of washing and application of a non-conductive paste in the apparatus of FIG.
  • FIG. 3 is a schematic sectional view showing the state of the substrate after the application of the non-conductive paste.
  • FIG. 4 is a schematic cross-sectional view showing a state of joining between objects to be joined.
  • FIG. 1 shows a mounting device according to an embodiment of the present invention.
  • the mounting device 1 is a means for cleaning at least one electrode of the substrate 2 as an object to be bonded, in this embodiment, a solder bump 3 formed on the substrate 2 by irradiation of energy waves or energy particles 4.
  • bonding means 7 for bonding the chip 6 as the other object to be bonded to the substrate 2.
  • the gold bump 8 is formed on the chip 6, and it is desirable to remove the contamination on the surface of the gold bump 8 by, for example, Ar plasma. No paste application is performed because there is no problem.
  • the gold bump 8 can be formed, for example, as a metal bump.
  • the cleaning means 5 is provided in the cleaning chamber 9 in the present embodiment, and plasma is used as the energy wave or the energy particles 4. If atmospheric pressure plasma is used, the cleaning chamber 9 can be omitted.
  • a non-conductive paste application means (dispenser) 10 which is movable integrally with the cleaning means is provided.
  • the application means 10 is adapted to apply the non-conductive paste at the same position immediately after cleaning by the cleaning means 5.
  • the substrate 2 to be cleaned and the cleaning means 5 are moved relative to each other, for example, in a horizontal direction, and the cleaning is performed during the relative movement. At the position after the relative movement where An electrically conductive paste may be applied.
  • the substrate 2 which has been washed and coated with the non-conductive paste is transported to the bonding means 7 provided in the bonding chamber 12 by the transport port 11.
  • the joining chamber 12 does not need to be particularly provided, but if the joining chamber 12 is provided, the inside of the joining chamber 12 can be set to, for example, an inert gas atmosphere or a reduced pressure atmosphere as necessary. .
  • the bonding means 7 heats and bonds the solder bumps 3 of the substrate 2 to which the non-conductive paste has been washed and the gold bumps 8 of the chip 6.
  • the joining means 7 has, for example, a stage 14 for holding the substrate 2 and a tool 15 for holding the chip 6.
  • the position of the stage 14 can be adjusted in the X and Y directions (horizontal direction) or in the X and Y directions (horizontal direction) and the rotation direction (direction).
  • Tool 15 can be adjusted in the Z direction (vertical direction), or can be adjusted in the Z direction (vertical direction) and the rotation direction (0 direction). In the present invention, these position adjustment methods are not particularly limited.
  • the upper and lower workpieces are positioned between the stage 14 and the tool 15 in order to detect the amount of positional deviation between the upper and lower workpieces and to adjust the position within the desired position accuracy range based on that.
  • Recognition means 16 for reading the recognition mark attached to the joint side is provided so as to be able to advance and retreat.
  • any means such as a CCD camera, an infrared camera, an X-ray camera, and a sensor may be used as long as it is a means for recognizing the recognition mark regardless of the type or size.
  • the recognition means 16 can also be adjusted in the X and Y directions (and, in some cases, further in the Z direction (vertical direction)).
  • the recognition means may be configured as another recognition means which separately reads the recognition marks provided on the upper and lower workpieces, respectively.
  • the alignment may be performed on either the tool side or the stage side, or on both sides.
  • the mounting method according to the present invention is implemented as follows.
  • the solder bumps 3 on the substrate 2 are cleaned, and immediately thereafter, the non-conductive paste 20 is applied to the cleaned solder bumps 3 by the application means 10 which was aligned with the cleaning means 5. Is done. This operation is repeated according to the number of the solder bumps 3 formed on the substrate 2 ⁇ the formation area of the solder bumps 3. Since cleaning is performed by atmospheric pressure plasma, no special atmosphere forming means is required, and the structure of the cleaning means can be simple. After the cleaning and the application of the non-conductive base, the cleaned solder bumps 3 are covered with the non-conductive paste 20 as shown in FIG.
  • the coating amount of the non-conductive base 20 may be adjusted by appropriately adjusting the coating means 10, but it is preferable that the coating amount is not too large.
  • a non-conductive paste 20 is applied to the solder bumps 3 on the substrate 2 immediately after or substantially simultaneously with the cleaning, and the cleaned solder bumps 3 are substantially completely non-conductive paste 20. As a result, the primary oxidation of the cleaned solder bump 3 is effectively prevented. The washed solder bumps 3 will not be exposed to the air thereafter, so they can be left as they are, for example, stocked as a production buffer. .
  • the substrate 2 on which the non-conductive paste 20 has been applied is transported to the bonding means 7 by the transport robot 11 and held at a predetermined position on the stage 14. After the position of the chip 6 held by the tool 15 and the position of the substrate 2 held by the stage 14 are aligned, the objects to be joined are heated and joined. As shown in FIG. 4, the heat bonding is performed by bonding the gold bumps 8 of the chip 6 which is not liable to be oxidized in the non-conductive paste 20 and the substrate 2 which has been prevented from being oxidized by the non-conductive paste 20. Since the solder bumps 3 are joined together, and especially the solder bumps 3 are heated in the non-conductive paste 20, secondary oxidation due to heating is also effectively prevented.
  • Heat bonding is performed in a state where both primary oxidation and secondary oxidation are prevented, so that the flux conventionally used is basically unnecessary for this bonding. In other words, 'fluxless bonding is possible. Since it is fluxless, there is no need for a flux coating process or flux residue removal process, greatly simplifying a series of processes and shortening the tact time.
  • Predetermined bonding between substrate 2 and chip 6 is performed while preventing primary oxidation and secondary oxidation Therefore, the quality after bonding is extremely excellent, even though it is a simple series of steps.
  • the non-conductive paste one containing conductive particles can be used. Therefore, even when the non-conductive paste remains between the bumps to be joined, The reliability of joining can be increased.
  • the form of the article to be joined is not particularly limited as long as it conforms to the object of the present invention.
  • the present invention is effective not only for solder bumps but also for any electrode that undergoes primary oxidation and / or secondary oxidation.
  • the mounting method and the mounting apparatus of the present invention can be applied to any mounting that joins objects to be bonded provided with electrodes.
  • a series of processes can be simplified, and the quality of the bonded object can be improved. Can be improved.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

A mounting method and a mounting device in which articles having an electrode are bonded by coating the electrode (3) of at least one article (2) to be bonded with nonconductive paste (20) immediately after that electrode (3) is irradiated with energy wave or energy particles (4) for cleaning. Since the electrode of the article to be bonded is prevented effectively against primary oxidation and secondary oxidation and fluxless bonding is realized, the process is simplified and the quality of a bonded article can be enhanced.

Description

明 糸田  Akira Itoda
実装方法および実装装置  Mounting method and mounting device
技 術 分 野 .  Technical field .
本発明は、 電極を備えた被接合物同士を （たとえばチップと基板とを） 接合す る実装方法およぴ実装装置に関する。  The present invention relates to a mounting method and a mounting apparatus for bonding objects to be bonded provided with electrodes (for example, a chip and a substrate).
背 景 技 術  Background technology
電極を備えた被接合物同士、 たとえば電極としてのバンプが形成されたチップ と基板を互いに接合、 たとえば加熱接合する実装方法はよく知られている。 代表 的な工法として、 接合に先立って電極が洗浄され、 洗浄後に、 非導電性ペース ト を塗布して接合後における接合部のシール性を確保するとともに、 接合の確実性 や接合時の電極の酸化物除去のために接合前にフラックスを塗布する工法が知ら れている。  It is well known that an object to be bonded having electrodes, for example, a chip having a bump formed as an electrode and a substrate are bonded to each other, for example, a bonding method by heating. As a typical method, the electrodes are cleaned prior to bonding, and after cleaning, a non-conductive paste is applied to ensure the sealability of the bonded parts after bonding, as well as the reliability of bonding and the bonding of the electrodes during bonding. A method of applying a flux before joining to remove oxides is known.
ところが、 上記のような従来工法では、 被接合物の電極を洗浄して一次酸化を 防止した後、 非導電性ペーストやフラックスの塗布までの時間が長いと、 被接合 物の電極、 たとえばハンダバンプが酸化してしまう可能性がある。  However, in the conventional method as described above, after the electrode of the object to be bonded is washed to prevent primary oxidation and then the time until the application of the non-conductive paste or flux is long, the electrode of the object to be bonded, for example, a solder bump, May be oxidized.
また、 加熱接合前にフラックスを塗布することによりある程度二次酸化を防止 することはできるが、 フラックスを塗布すると、 接合後にフラックスの残渣の除 去が必要となり、 それだけ工程が複雑になるという問題を招いている。  Although secondary oxidation can be prevented to some extent by applying a flux before heat bonding, the application of flux requires the removal of flux residues after bonding, which complicates the process. Inviting.
発 明 の 開 示  Disclosure of the invention
そこで、 本発明の目的は、 被接合物の電極の一次酸化および二次酸化を効果的 に防止でき、 かつ、 フラックスレスでの接合を可能とする、 工程の簡素化が可能 な効率のよい実装方法および実装装置を提供することにある。  Therefore, an object of the present invention is to efficiently prevent primary oxidation and secondary oxidation of an electrode of an object to be bonded and to achieve fluxless bonding, and to realize an efficient mounting in which the process can be simplified. It is to provide a method and a mounting device.
上記目的を達成するために、 本発明に係る実装方法は、 電極を備えた被接合物 同士を接合するに際し、 少なく とも一方の被接合物の電極をエネルギー波もしく はエネルギー粒子を照射することにより洗浄した直後に、 非導電性ペース トを塗 布し、 しかる後に両被接合物を接合することを特徴とする方法からなる。  In order to achieve the above object, in a mounting method according to the present invention, at the time of joining objects to be bonded provided with electrodes, at least one of the electrodes of the object is irradiated with energy waves or energy particles. Immediately after the cleaning, a non-conductive paste is applied, and then the two objects are joined.
この実装方法においては、 少なく とも一方の被接合物の電極をエネルギー波も しくはエネルギー粒子を照射することにより洗浄した直後に、 洗浄と同じ位置に て非導電性ペーストを塗布することができる。 あるいは、 少なくとも一方の被接 合物の電極を該エネルギー波もしくはエネルギー粒子を照射することにより洗浄 するに際し、 該被接合物とエネルギー波もしくはエネルギー粒子を照射する手段 とを相対移動させながら洗浄する、 例えば、 水平方向に相対移動させながら洗浄 することもできる。 この場合には、 洗浄した直後に、 相対移動後の位置にて非導 電性ペーストを塗布すればよい。 In this mounting method, immediately after the electrodes of at least one of the objects are cleaned by irradiating them with energy waves or energy particles, the non-conductive paste can be applied at the same position as the cleaning. Or at least one contacted When cleaning the electrode of the compound by irradiating the energy wave or the energy particles, the object to be bonded and the means for irradiating the energy wave or the energy particles are relatively moved, for example, the relative movement in the horizontal direction is performed. It can also be washed while keeping it. In this case, the non-conductive paste may be applied immediately after the cleaning at the position after the relative movement.
本発明に係る方法のより具体的な態様としては、 たとえば、 一方の被接合物が 電極としてのハンダバンプが形成された基板またはチップであり、 ハンダバンプ をエネルギー波もしくはエネルギー粒子を照射することにより洗浄した直後に、 同じ位置にて、 あるいは相対移動後の位置にて、 非導電性ペース トを該被接合物 上に塗布し、 しかる後に該被接合物のハンダバンプと他方の被接合物の電極を接 合する方法である。 他方の被接合物としては、 その電極が金バンプにより形成さ れたチップまたは基板、 あるいは、 前記一方の被接合物と同様に、 電極としてハ ンダバンプが形成された基板またはチップのいずれであってもよい。 後者の場合 には、 他方の被接合物のハンダバンプに対しても、 エネルギー波もしくはェネル ギ一粒子を照射することにより洗浄した直後に、 同じ位置にて、 あるいは相対移 動後の位置にて、 非導電性ペース トを該被接合物上に塗布し、 しかる後に両被接 合物のハンダバンプ同士を接合すればよい。'  As a more specific embodiment of the method according to the present invention, for example, one of the objects to be bonded is a substrate or a chip on which solder bumps as electrodes are formed, and the solder bumps are cleaned by irradiating them with energy waves or energy particles. Immediately thereafter, at the same position or at a position after the relative movement, a non-conductive paste is applied on the object, and thereafter, the solder bump of the object is connected to the electrode of the other object. It is a method of matching. The other object to be bonded is either a chip or a substrate whose electrode is formed by a gold bump, or a substrate or a chip having a solder bump formed as an electrode similarly to the one object to be bonded. Is also good. In the latter case, the solder bump on the other object is also cleaned immediately after being irradiated with energy waves or energy particles, at the same position, or at a position after the relative movement. A non-conductive paste may be applied onto the object to be bonded, and then the solder bumps of both objects may be bonded. '
ハンダバンプからなる電極と金バンプからなる電極との接合に関しては、 ハン ダバンプが形成された基板と金バンプが形成されたチップの組み合わせ、 ハンダ バンプが形成されたチップと金バンプが形成された基板の組み合わせ、 さらには、 ハンダバンプが形成されたチップと金バンプが形成されたチップの組み合わせ等 における接合が可能である。 接合方法としては、 代表的にはヒータ一等による加 熱接合を適用できるが、 これに限らず、 超音波を使用した超音波接合も適用可能 める。  Regarding the joining of the solder bump electrode and the gold bump electrode, the combination of the solder bump formed substrate and the gold bump formed chip, the solder bump formed chip and the gold bump formed substrate Combination, and further, bonding in a combination of a chip on which solder bumps are formed and a chip on which gold bumps are formed, and the like are possible. As a bonding method, typically, heating bonding using a heater or the like can be applied, but not limited thereto, and ultrasonic bonding using ultrasonic waves can also be applied.
また、 本発明で言う 「電極」 とは、 被接合物の表面と同じレベルあるいはそれ よりも若干高い位置に平坦状に形成された電極、 および、 該平坦な電極上に、 あ るいは被接合物の表面上に、 凸状に盛り上がるように形成された、 いわゆるバン プと呼ばれる形態を含む概念である。 したがって、 電極同士の接合も、 バンプ同 士の接合、 バンプと平坦電極の接合を含む概念である。 - 本発明におけるエネルギー波もしくはエネルギー粒子としては、 プラズマ、 ィ オンビーム、 原子ビーム、 ラジカルビーム、 レーザ等を用いることができ、 とく に洗浄効果および装置構成の簡素化の点から、 大気圧プラズマを用いることが好 ましい。 大気圧プラズマは、 被接合物に電荷をチャージさせないよう、 管内で電 圧をかける方式が望ましい。 The term “electrode” as used in the present invention refers to an electrode which is formed in a flat shape at the same level as or slightly higher than the surface of an object to be bonded, and It is a concept that includes a so-called bump form formed on the surface of an object so as to protrude in a convex shape. Therefore, the bonding between electrodes is a concept that includes the bonding between bumps and the bonding between bumps and flat electrodes. - As an energy wave or an energy particle in the present invention, plasma, ion beam, atomic beam, radical beam, laser, or the like can be used.Atmospheric pressure plasma is used particularly in view of cleaning effect and simplification of the device configuration. Is preferred. For atmospheric pressure plasma, it is desirable to apply a voltage in the tube so as not to charge the workpiece.
本発明に係る実装装置は、 電極を備えた被接合物同士を接合する実装装置であ つて、 少なくとも一方の被接合物の電極をエネルギー波もしくはエネルギー粒子 を照射することにより洗浄する手段と、 該洗浄手段と実質的に一体的に移動可能 な非導電性ペース卜の塗布手段とを有することを特徴とするものからなる。 上記洗浄手段は、 洗浄すべき被接合物に対し相対移動可能な手段に構成されて いることが好ましく、 これによつて、 相対移動させながら所望の洗浄を行うこと ができる。 また、 非導電性ペーストの塗布手段も、 被接合物に対し相対移動可能 な手段に構成できる。 たとえば、 非導電性ペース トの塗布手段を、 上記洗浄手段 と一定の間隔をもって設置しておく と、 洗浄手段と実質的に一体的に移動させ、 かつ、 被接合物に対し相対移動させることにより、 必要な洗浄を行った直後に非 導電性べ一ストを塗布することが可能になる。 また、 上記非導電性べ一ス トの塗 布手段を、 洗浄手段による洗浄後においては、 洗浄手段に対して独立に、 被接合 物に対し相対移動可能に構成することもできる。 但しこの場合、 洗浄を終了した 洗浄手段が、 非導電性ペースト塗布手段と一体的に移動してもかまわない。 このように、 洗浄手段と非導電性べ—ス トの塗布手段が実質的に一体的に移動 されて位置が調整されるので、 洗浄直後に同位置にて非導電性ペース卜の塗布が 可能になる。 あるいは、 洗浄手段と非導電性ペース トの塗布手段を所定の位置関 係をもつて一体的に移動可能に構成しておき、 洗浄時には被接合物と洗浄手段と を相対移動させながら洗浄し、 その洗浄直後に、 その相対移動後の位置にて非導 電性ぺ一ストを塗布することも可能である。  A mounting apparatus according to the present invention is a mounting apparatus for joining objects to be joined provided with electrodes, and means for cleaning at least one of the electrodes of the objects by irradiating the electrodes with energy waves or energy particles. A cleaning means and a non-conductive paste coating means which can be moved substantially integrally. The above-mentioned cleaning means is preferably configured to be a means that can be relatively moved with respect to the article to be cleaned, whereby desired cleaning can be performed while being relatively moved. Also, the means for applying the non-conductive paste can be configured as a means that can be relatively moved with respect to the workpiece. For example, if the non-conductive paste applying means is arranged at a fixed distance from the above-mentioned cleaning means, it can be moved substantially integrally with the cleaning means and can be moved relative to the workpiece. However, it becomes possible to apply the non-conductive paste immediately after performing the necessary cleaning. Further, the coating means of the non-conductive base may be configured to be movable relative to the object to be bonded independently of the cleaning means after the cleaning by the cleaning means. However, in this case, the cleaning means which has completed the cleaning may move integrally with the non-conductive paste applying means. In this way, the position of the cleaning means and the means of applying the non-conductive paste are adjusted substantially by being integrally moved, so that the non-conductive paste can be applied at the same position immediately after the cleaning. become. Alternatively, the cleaning means and the means for applying the non-conductive paste are integrally movable so as to have a predetermined positional relationship. Immediately after the cleaning, a nonconductive paste can be applied at a position after the relative movement.
なお、 本発明において、 エネルギー波もしくはエネルギー粒子を照射すること による洗浄は、 表面に存在するコンタミ （コンタミネーシヨン） の除去を目的と するが、 このコンタミネ一シヨ ンとは、 基板電極等に付着している有機物、 酸化 物やその他の不純物のことである。 また、 本発明における接合部は、 通常の鉛/ 錫のハンダによる接合部の他、 錫/銀、 B i / I n等の、 いわゆる代替ハンダと 呼ばれるものによる接合部、 金/錫、 金 Z金による接合部を含む概念である。 ま た、 本発明における電極とは、 電気配線を伴った電極だけでなく、 電気配線のつ ながっていないダミー電極も含む。 さらに、 本発明におけるチップとは、 たとえ ば、 I Cチップ、 半導体チップ、 光素子、 表面実装部品、 ウェハーなど、 種類や 大きさに関係なく、 基板と接合させる側の全てのものを言う。 また、 基板とは、 たとえば、 樹脂基板、 ガラス基板、 フィルム基板、 チップ、 ウェハ一など、 種類 や大きさに関係なく、 チップと接合させる側の全てのものを言う。 In the present invention, the purpose of cleaning by irradiating energy waves or energy particles is to remove contaminants (contamination) existing on the surface. The term “contamination” refers to adhesion to a substrate electrode or the like. Organic matter, oxides and other impurities. In addition, the joint in the present invention is formed of ordinary lead / The concept includes a joint made of what is called an alternative solder, such as tin / silver, Bi / In, and a joint made of gold / tin and gold-Z gold, in addition to a joint made of tin solder. Further, the electrode in the present invention includes not only an electrode with an electric wiring but also a dummy electrode without an electric wiring. Further, the chip in the present invention refers to everything on the side to be joined to the substrate, for example, IC chip, semiconductor chip, optical element, surface mount component, wafer, etc. irrespective of the type and size. Also, the term “substrate” means, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like, irrespective of the type and size thereof, everything on the side joined to the chip.
上記のような本発明に係る実装方法および実装装置においては、 電極を洗浄し た直後に非導電性ペーストが塗布されるので、 洗浄後のペースト塗布までに長時 間放置されたりすることはなくなり、 非導電性ペーストによる被覆によって、 洗 浄された電極の一次酸化が確実に防止される。 しかも、 洗浄と同じ位置で、 ある いは相対移動直後の位置で、 洗浄直後に非導電性べ一ストが塗布されるから、 塗 布の位置精度も容易に確保され、 洗浄された電極に対しそれを確実に覆うように 正確に非導電性べ一ストが塗布される。  In the mounting method and the mounting apparatus according to the present invention as described above, since the non-conductive paste is applied immediately after the electrode is cleaned, it is not left for a long time before the paste is applied after the cleaning. In addition, the coating with the non-conductive paste reliably prevents the primary oxidation of the washed electrode. In addition, since the non-conductive paste is applied immediately after the cleaning at the same position as the cleaning or immediately after the relative movement, the positional accuracy of the coating is easily secured, and the cleaned electrode is A precise non-conductive paste is applied to ensure that it is covered.
この状態で、 被接合物同士が接合 （たとえば加熱接合） されるので、 洗浄直後 から非導電性ペース卜で覆われている電極は接合に至るまで周囲の雰囲気に触れ る機会がなくなり、 二次酸化も防止されることになる。 また、 このように洗浄直 後の電極表面を非導電性ぺ一ストで覆うことにより、 酸化防止に限らず、 後の接 合工程の妨げとなる、 酸化以外の金属表面との反応や望ましくない異物や反応物 の付着 （たとえば、 C Oなどの吸着） を防止することができる。 したがって、 フ ラックスレスでの接合が可能となり、 フラックスレスとすることにより、 接合完 了に至るまでの一連の工程が大幅に簡素化される。 また、 接合工程では既に非導 電性ペーストが塗布されており、 かつ、 フラックス工程、 その残渣除去工程が不 要であるので、 一連の工程に要する時間が大幅に短縮され、 タク トタイムが短縮 される。 また、 被接合物の電極の一次酸化および二次酸化をともに効果的に防止 でき、 かつ、 異物等のコンタミネーシヨンも効果的に防止できるので、 接合品の 優れた品質を確保することができる。  In this state, the objects to be joined are joined together (for example, by heat joining), so that the electrode covered with the non-conductive paste immediately after washing has no chance to come into contact with the surrounding atmosphere until joining, and the secondary Oxidation will also be prevented. In addition, by covering the electrode surface immediately after cleaning with a non-conductive paste as described above, not only prevention of oxidation but also a reaction with a metal surface other than oxidation or an undesired one that hinders a subsequent bonding step is undesirable. Adhesion of foreign substances and reactants (for example, adsorption of CO, etc.) can be prevented. Therefore, fluxless joining becomes possible, and by using fluxless, a series of steps until joining is completed is greatly simplified. In addition, in the joining process, a non-conductive paste has already been applied, and the flux process and the residue removal process are not necessary. You. In addition, it is possible to effectively prevent both primary oxidation and secondary oxidation of the electrode of the object to be bonded, and also to effectively prevent contamination such as foreign matter, thereby ensuring excellent quality of the bonded product. .
さらに、 洗浄と実質的に同時に非導電性ペース卜が塗布されており、.電極の一 次酸化が防止されているので、 接合工程に至るまでの時間を考慮する必要がなく なる。 その結果、 たとえば非導電性ペーストを塗布した状態でのストックも可能 になり、 一連の生産工程に必要に応じてバッファをもたせることも可能になる。 Furthermore, a non-conductive paste is applied substantially simultaneously with the cleaning. Since the secondary oxidation is prevented, it is not necessary to consider the time until the bonding process. As a result, for example, it is possible to stock in a state where a non-conductive paste is applied, and it is possible to provide a buffer in a series of production processes as necessary.
図 面 の 簡 単 な 説 明  Brief explanation of drawings
図 1は、 本発明の一実施態様に係る実装装置の概略構成図である。  FIG. 1 is a schematic configuration diagram of a mounting device according to an embodiment of the present invention.
図 2は、 図 1の装置における洗净、 非導電性ペース トの塗布の様子を示す拡大 概略側面図である。  FIG. 2 is an enlarged schematic side view showing a state of washing and application of a non-conductive paste in the apparatus of FIG.
図 3は、 非導電性ペースト塗布後の基板の状態を示す概略断面図である。 図 4は、 被接合物同士の接合の様子を示す概略断面図である。  FIG. 3 is a schematic sectional view showing the state of the substrate after the application of the non-conductive paste. FIG. 4 is a schematic cross-sectional view showing a state of joining between objects to be joined.
発明 を実施す る た め の最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
以下に、 本発明の望ましい実施の形態を、 図面を参照しながら説明する。 図 1は、 本発明の一実施態様に係る実装装置を示している。 図 1において、 実 装装置 1は、 少なくとも一方の被接合物としての基板 2の電極、 本実施態様では 基板 2に形成されたハンダバンプ 3を、 エネルギー波もしくはエネルギー粒子 4 の照射により洗浄する手段 5と、 基板 2に、 他方の被接合物としてのチップ 6を 接合する接合手段 7を有している。 本実施態様では、 チップ 6には金バンプ 8が 形成されており、 金バンプ 8に対しては、 表面のコンタミ除去、 たとえば A rプ ラズマによるコンタミ除去を行うことが望ましいが、 本質的に酸化の問題がない ので、 ペースト塗布は行われない。 金バンプ 8は、 たとえばメ ツキバンプとして 形成できる。  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a mounting device according to an embodiment of the present invention. In FIG. 1, the mounting device 1 is a means for cleaning at least one electrode of the substrate 2 as an object to be bonded, in this embodiment, a solder bump 3 formed on the substrate 2 by irradiation of energy waves or energy particles 4. And bonding means 7 for bonding the chip 6 as the other object to be bonded to the substrate 2. In this embodiment, the gold bump 8 is formed on the chip 6, and it is desirable to remove the contamination on the surface of the gold bump 8 by, for example, Ar plasma. No paste application is performed because there is no problem. The gold bump 8 can be formed, for example, as a metal bump.
洗浄手段 5は、 本実施態様では、 洗浄チャンバ 9内に設けられており、 ェネル ギ一波もしくはエネルギー粒子 4としてプラズマが用いられている。 大気圧ブラ ズマが用いられる場合には、 洗浄チャ ンバ 9を省略することが可能である。 この 洗浄手段 5の近傍に、 該洗浄手段と一体的に移動可能な非導電性ペース 卜の塗布 手段 （デイスペンサ） 1 0が設けられている。 塗布手段 1 0は、 洗浄手段 5によ る洗浄直後に、 同じ位置にて非導電性ペーストを塗布できるようになつている。 上記洗浄は、 前述したように、 洗浄されるべき基板 2と洗浄手段 5とを相対移 動させ、 たとえば、 水平方向に相対移動させ、 相対移動中に洗浄を行い、 洗浄直 後に、 つまり、 洗浄を終了した相対移動後の位置にて、 塗布手段 1 0により非導 電性ペーストを塗布するようにしてもよい。 The cleaning means 5 is provided in the cleaning chamber 9 in the present embodiment, and plasma is used as the energy wave or the energy particles 4. If atmospheric pressure plasma is used, the cleaning chamber 9 can be omitted. In the vicinity of the cleaning means 5, a non-conductive paste application means (dispenser) 10 which is movable integrally with the cleaning means is provided. The application means 10 is adapted to apply the non-conductive paste at the same position immediately after cleaning by the cleaning means 5. In the above-described cleaning, as described above, the substrate 2 to be cleaned and the cleaning means 5 are moved relative to each other, for example, in a horizontal direction, and the cleaning is performed during the relative movement. At the position after the relative movement where An electrically conductive paste may be applied.
洗浄され、 非導電性ペーストが塗布された基板 2は、 本実施態様では、 搬送口 ポッ ト 1 1により、 接合チヤ ンバ 1 2に設けられた接合手段 7へと搬送される。 接合チヤンバ 1 2は、 とくに設けなくてもよいが、 接合チヤンバ 1 2を設けると、 必要に応じて、 接合チヤ ンバ 1 2内を、 たとえば不活性ガス雰囲気や減圧雰囲気 とすることが可能にある。 洗浄チャ ンバ 9内をシールするため、 あるいは、 洗浄 チヤ ンバ 9内と接合チヤンバ 1 2内とを異なる雰囲気とするために、 間にシャッ タ手段 1 3を設けておく ことが好ましい。  In the present embodiment, the substrate 2 which has been washed and coated with the non-conductive paste is transported to the bonding means 7 provided in the bonding chamber 12 by the transport port 11. The joining chamber 12 does not need to be particularly provided, but if the joining chamber 12 is provided, the inside of the joining chamber 12 can be set to, for example, an inert gas atmosphere or a reduced pressure atmosphere as necessary. . In order to seal the inside of the cleaning chamber 9 or to make the inside of the cleaning chamber 9 and the inside of the joining chamber 12 different atmospheres, it is preferable to provide a shutter means 13 between them.
接合手段 7は、 洗浄され非導電性ペース 卜が塗布された基板 2のハンダバンプ 3と、 チップ 6の金バンプ 8とを加熱接合する。 接合手段 7は、 たとえば基板 2 を保持するステージ 1 4と、 チップ 6を保持するツール 1 5を有している。 本実 施態様においては、 ステージ 1 4は X、 Y方向 （水平方向） に位置調整、 または X、 Y方向 （水平方向） と回転方向 （ 方向） に位置調整できるようになつてい る。 ツール 1 5は Z方向 （上下方向） に位置調整、 または Z方向 （上下方向） と 回転方向 （0方向） に調整できるようになつている。 本発明においては、 これら 位置調整の方法は特に限定されない。 また、 上下の被接合物の位置ずれ量を検出 し、 それに基づいて所望の位置精度範囲内に調整できるようにするために、 ステ ージ 1 4とツール 1 5の間には、 上下の被接合物側に付された認識マークを読み 取る認識手段 1 6が進退可能に設けられている。 認識手段 1 6としては、 例えば、 C C Dカメラ、 赤外線カメラ、 X線カメラ、 センサ一など、 種類や大きさに関係 なく認識マークを認識する手段であれば、 いかなる手段であってもよい。 この認 識手段 1 6 も X、 Y方向に （場合によっては、 さらに Z方向 （上下方向） に） 位 置調整できるようになつている。 また、 この認識手段は、 上下の被接合物側に付 された認識マークをそれぞれ別々に読み取る、 別構成の認識手段に構成されても よい。 ァライメントについては、 ツール側、 ステージ側のどちらで行ってもよく、 双方で行ってもよい。  The bonding means 7 heats and bonds the solder bumps 3 of the substrate 2 to which the non-conductive paste has been washed and the gold bumps 8 of the chip 6. The joining means 7 has, for example, a stage 14 for holding the substrate 2 and a tool 15 for holding the chip 6. In this embodiment, the position of the stage 14 can be adjusted in the X and Y directions (horizontal direction) or in the X and Y directions (horizontal direction) and the rotation direction (direction). Tool 15 can be adjusted in the Z direction (vertical direction), or can be adjusted in the Z direction (vertical direction) and the rotation direction (0 direction). In the present invention, these position adjustment methods are not particularly limited. In addition, the upper and lower workpieces are positioned between the stage 14 and the tool 15 in order to detect the amount of positional deviation between the upper and lower workpieces and to adjust the position within the desired position accuracy range based on that. Recognition means 16 for reading the recognition mark attached to the joint side is provided so as to be able to advance and retreat. As the recognizing means 16, any means such as a CCD camera, an infrared camera, an X-ray camera, and a sensor may be used as long as it is a means for recognizing the recognition mark regardless of the type or size. The recognition means 16 can also be adjusted in the X and Y directions (and, in some cases, further in the Z direction (vertical direction)). Further, the recognition means may be configured as another recognition means which separately reads the recognition marks provided on the upper and lower workpieces, respectively. The alignment may be performed on either the tool side or the stage side, or on both sides.
このように構成された実装装置 1を用いて、 本発明に係る実装方法は次のよう に実施される。  Using the mounting apparatus 1 configured as described above, the mounting method according to the present invention is implemented as follows.
' 本実施態様では、 図 2に示すように、 洗浄手段 5からの大気圧プラズマ 4によ り、 基板 2のハンダバンプ 3が洗浄され、 その直後に、 洗浄手段 5とともに位置 合わせされていた塗布手段 1 0力、ら、 洗浄されたハンダバンプ 3に向けて非導電 性ペース ト 2 0が塗布.される。 基板 2に形成されているハンダバンプ 3の数ゃハ ンダバンプ 3の形成領域に応じてこの動作がく り返し行われる。 大気圧プラズマ による洗浄であるから、 特別な雰囲気形成手段は不要であり、 洗浄手段部の構成 としては簡素なもので済む。 洗浄、 非導電性べ一ス トの塗布後には、 図 3に示す ように、 洗浄されたハンダバンプ 3が非導電性ペースト 2 0によって覆われた状 態となる。 非導電性べ一ス ト 2 0の被覆量は、 塗布手段 1 0を適宜調整すること により調節されればよいが、 多くなりすぎないようにすることが好ましい。 基板 2のハンダバンプ 3に対して、 洗浄直後、 あるいは洗浄と実質的に同時に 非導電性べ一ス ト 2 0が塗布され、 洗浄されたハンダバンプ 3が実質的に完全に 非導電性ペース ト 2 0によって覆われた状態とされるので、 洗浄されたハンダバ ンプ 3の一次酸化は効果的に防止される。 洗浄されたハンダバンプ 3 はこの後大 気に触れないので、 そのまま放置、 たとえば生産のバッファとしてストックして おく ことも可能である。 . ′ In this embodiment, as shown in FIG. Then, the solder bumps 3 on the substrate 2 are cleaned, and immediately thereafter, the non-conductive paste 20 is applied to the cleaned solder bumps 3 by the application means 10 which was aligned with the cleaning means 5. Is done. This operation is repeated according to the number of the solder bumps 3 formed on the substrate 2 ゃ the formation area of the solder bumps 3. Since cleaning is performed by atmospheric pressure plasma, no special atmosphere forming means is required, and the structure of the cleaning means can be simple. After the cleaning and the application of the non-conductive base, the cleaned solder bumps 3 are covered with the non-conductive paste 20 as shown in FIG. The coating amount of the non-conductive base 20 may be adjusted by appropriately adjusting the coating means 10, but it is preferable that the coating amount is not too large. A non-conductive paste 20 is applied to the solder bumps 3 on the substrate 2 immediately after or substantially simultaneously with the cleaning, and the cleaned solder bumps 3 are substantially completely non-conductive paste 20. As a result, the primary oxidation of the cleaned solder bump 3 is effectively prevented. The washed solder bumps 3 will not be exposed to the air thereafter, so they can be left as they are, for example, stocked as a production buffer. .
非導電性ペース ト 2 0の塗布された基板 2は、 搬送ロボッ ト 1 1によって接合 手段 7へと搬送され、 ステージ 1 4上の所定の位置に保持される。 ツール 1 5に 保持されたチップ 6とステージ 1 4に保持された基板 2との位置合わせが行われ た後、 両被接合物が加熱接合される。 この加熱接合は、 図 4に示すように、 非導 電性ペースト 2 0中で、 酸化のおそれのないチップ 6の金バンプ 8と、 非導電性 ペースト 2 0によって酸化が防止されていた基板 2のハンダバンプ 3とが接合さ れることになり、 とくにハンダバンプ 3が非導電性ペースト 2 0中で加熱される ことになるので、 加熱による二次酸化も効果的に防止される。  The substrate 2 on which the non-conductive paste 20 has been applied is transported to the bonding means 7 by the transport robot 11 and held at a predetermined position on the stage 14. After the position of the chip 6 held by the tool 15 and the position of the substrate 2 held by the stage 14 are aligned, the objects to be joined are heated and joined. As shown in FIG. 4, the heat bonding is performed by bonding the gold bumps 8 of the chip 6 which is not liable to be oxidized in the non-conductive paste 20 and the substrate 2 which has been prevented from being oxidized by the non-conductive paste 20. Since the solder bumps 3 are joined together, and especially the solder bumps 3 are heated in the non-conductive paste 20, secondary oxidation due to heating is also effectively prevented.
一次酸化、 二次酸化ともに防止された状態で加熱接合が行われるので、 この接 合に際しては、 基本的に従来使用していたフラックスが不要になる。 つまり、 'フ ラックスレスでの接合が可能になる。 フラックスレスであるから、 フラックス塗 布工程や、 フラックスの残渣除去工程が不要になり、 一連の工程が大幅に簡素化 され、 タク トタイムが短縮される。  Heat bonding is performed in a state where both primary oxidation and secondary oxidation are prevented, so that the flux conventionally used is basically unnecessary for this bonding. In other words, 'fluxless bonding is possible. Since it is fluxless, there is no need for a flux coating process or flux residue removal process, greatly simplifying a series of processes and shortening the tact time.
一次酸化、 二次酸化が防止されつつ、 基板 2とチップ 6との所定の接合が行わ れるので、 簡素な一連の工程でありながら、 接合後の品質は極めて優れている。 なお、 非導電性べ一ストとしては、 導電粒子を含有させたものを使用すること も可能であり、 それによつて、 接合されるバンプ間に非導電性べ一ストが残る場 合にも、 接合の確実性を高めることができる。 また、 被接合物の形態は、 本発明 の目的に適合する限り、 特に限定されない。 Predetermined bonding between substrate 2 and chip 6 is performed while preventing primary oxidation and secondary oxidation Therefore, the quality after bonding is extremely excellent, even though it is a simple series of steps. As the non-conductive paste, one containing conductive particles can be used. Therefore, even when the non-conductive paste remains between the bumps to be joined, The reliability of joining can be increased. The form of the article to be joined is not particularly limited as long as it conforms to the object of the present invention.
また、 本発明は、 ハンダバンプだけでなく、 一次酸化および/または二次酸化 反応するあらゆる電極に有効である。  Further, the present invention is effective not only for solder bumps but also for any electrode that undergoes primary oxidation and / or secondary oxidation.
産 業 上 の 利 用 可 能 性  Industrial availability
本発明の実装方法および実装装置は、 電極を備えた被接合物同士を接合するあ らゆる実装に適用でき、 本発明を適用することにより、 一連の工程を簡素化する とともに、 接合物の品質を向上することができる。  The mounting method and the mounting apparatus of the present invention can be applied to any mounting that joins objects to be bonded provided with electrodes. By applying the present invention, a series of processes can be simplified, and the quality of the bonded object can be improved. Can be improved.

Claims

言青 求 の 範 囲 Scope of demand
1 . 電極を備えた被接合物同士を接合するに際し、 少なく とも一方の被接合物の 電極をエネルギー波もしくはエネルギー粒子を照射することにより洗浄した直後 に、 非導電性ペース トを塗布し、 しかる後に両被接合物を接合することを特徴と する実装方法。  1. At the time of joining objects to be joined equipped with electrodes, a non-conductive paste is applied immediately after at least the electrodes of one of the objects are cleaned by irradiating them with energy waves or energy particles. A mounting method characterized by joining both workpieces later.
2 . 少なく とも一方の被接合物の電極をエネルギー波もしくはエネルギー粒子を 照射することにより洗浄した直後に、 同じ位置にて非導電性ペーストを塗布する、 請求項 1の実装方法。 2. The mounting method according to claim 1, wherein the non-conductive paste is applied at the same position immediately after at least one of the electrodes of the object is cleaned by irradiating it with energy waves or energy particles.
3 . 少なくとも一方の被接合物の電極を該エネルギー波もしくはエネルギー粒子 を照射することにより洗浄するに際し、 該被接合物とエネルギー波もしくはエネ ルギ一粒子を照射する手段とを相対移動させながら洗浄する、 請求項 1の実装方 法。 3. When cleaning at least one of the electrodes of the object by irradiating the energy wave or the energy particles with the energy wave or the energy particles, cleaning the electrode while the object and the means for irradiating the energy wave or the energy particles are relatively moved. The implementation method of claim 1.
4 . 少なく とも一方の被接合物が電極としてハンダバンプが形成された基板また はチップであり、 ハンダバンプにエネルギー波もしくはエネルギー粒子を照射す ることにより洗浄した直後に、 非導電性べ一ス トを該被接合物上に塗布し、 しか る後に該被接合物のハンダバンプと他方の被接合物の電極を接合する、 請求項 1 の実装方法。 4. At least one of the objects to be bonded is a substrate or a chip on which solder bumps are formed as electrodes. 2. The mounting method according to claim 1, wherein the solder bump is applied on the object to be bonded, and then the solder bump of the object to be bonded and an electrode of the other object are bonded.
5 . エネルギー波もしくはエネルギー粒子として大気圧プラズマを用いる、 請求 項 1の実装方法。 5. The mounting method according to claim 1, wherein atmospheric pressure plasma is used as energy waves or energy particles.
6 . 電極を備えた被接合物同士を接合する実装装置であって、 少なく とも一方の 被接合物の電極をエネルギー波もしくはエネルギー粒子を照射することにより洗 浄する手段と、 該洗浄手段と実質的に一体的に移動可能な非導電性ペース 卜の塗 布手段とを有することを特徴とする実装装置。 6. A mounting device for joining objects to be joined provided with electrodes, wherein at least one of the objects to be joined is cleaned by irradiating energy waves or energy particles to the electrodes; A coating device for applying a non-conductive paste that can be moved integrally integrally.
7 . 前記洗浄手段が、 被接合物に対し相対移動可能な手段からなる、 請求項 6の 7. The cleaning means according to claim 6, wherein the cleaning means comprises means capable of moving relative to the workpiece.
8 . 前記非導電性ペーストの塗布手段が、 被接合物に対し相対移動可能な手段か らなる、 請求項 6の実装装置。 8. The mounting apparatus according to claim 6, wherein the means for applying the non-conductive paste comprises means capable of moving relative to the workpiece.
9 . 前記非導電性べ一ストの塗布手段が、 前記洗浄手段と一定の間隔をもって設 置されている、 請求項 7の実装装置。 9. The mounting apparatus according to claim 7, wherein the non-conductive paste applying means is provided at a predetermined interval from the cleaning means.
1 0 . 前記非導電性ペーストの塗布手段が、 前記洗浄手段による洗浄後には被接 合物に対し相対移動可能な手段に構成されている、 請求項 6の実装装置。 10. The mounting apparatus according to claim 6, wherein the means for applying the non-conductive paste is a means capable of moving relative to the object after being cleaned by the cleaning means.
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