WO2001035041A3 - Method for rapid thermal processing of substrates - Google Patents
Method for rapid thermal processing of substrates Download PDFInfo
- Publication number
- WO2001035041A3 WO2001035041A3 PCT/US2000/041492 US0041492W WO0135041A3 WO 2001035041 A3 WO2001035041 A3 WO 2001035041A3 US 0041492 W US0041492 W US 0041492W WO 0135041 A3 WO0135041 A3 WO 0135041A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- gas stream
- hot gas
- heated portion
- peak temperatures
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 11
- 238000000034 method Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00992125A EP1234328A2 (en) | 1999-11-01 | 2000-10-23 | Method for rapid thermal processing of substrates |
JP2001536925A JP2003514377A (en) | 1999-11-01 | 2000-10-23 | Rapid heat treatment method for substrates |
AU41344/01A AU4134401A (en) | 1999-11-01 | 2000-10-23 | Method for rapid thermal processing of substrates |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16276299P | 1999-11-01 | 1999-11-01 | |
US60/162,762 | 1999-11-01 | ||
US09/689,307 US6467297B1 (en) | 2000-10-12 | 2000-10-12 | Wafer holder for rotating and translating wafers |
US09/689,307 | 2000-10-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2001035041A2 WO2001035041A2 (en) | 2001-05-17 |
WO2001035041A3 true WO2001035041A3 (en) | 2002-01-24 |
WO2001035041A9 WO2001035041A9 (en) | 2002-08-08 |
Family
ID=26859041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/041492 WO2001035041A2 (en) | 1999-11-01 | 2000-10-23 | Method for rapid thermal processing of substrates |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1234328A2 (en) |
JP (1) | JP2003514377A (en) |
AU (1) | AU4134401A (en) |
WO (1) | WO2001035041A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3501768B2 (en) * | 2001-04-18 | 2004-03-02 | 株式会社ガソニックス | Substrate heat treatment apparatus and method of manufacturing flat panel device |
JP5105620B2 (en) * | 2008-12-05 | 2012-12-26 | 株式会社フィルテック | Film forming method and film forming apparatus |
JP5403247B2 (en) * | 2009-09-07 | 2014-01-29 | 村田機械株式会社 | Substrate transfer device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122043A (en) * | 1990-12-06 | 1992-06-16 | Matthews M Dean | Electric pulsed power vacuum press |
US5336641A (en) * | 1992-03-17 | 1994-08-09 | Aktis Corporation | Rapid thermal annealing using thermally conductive overcoat |
US5843239A (en) * | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US5913127A (en) * | 1995-06-29 | 1999-06-15 | Micron Technology, Inc. | Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS |
US6121061A (en) * | 1997-11-03 | 2000-09-19 | Asm America, Inc. | Method of processing wafers with low mass support |
US6165273A (en) * | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138973A (en) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | Manufacture of insulated gate type field effect transistor |
JPS61170025A (en) * | 1985-01-23 | 1986-07-31 | Nec Corp | Formation of diffusion layer |
JPS62290120A (en) * | 1986-06-09 | 1987-12-17 | Ricoh Co Ltd | Formation of single crystal of polycrystalline semiconductor film |
JPS63172424A (en) * | 1987-01-12 | 1988-07-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01242141A (en) * | 1988-03-23 | 1989-09-27 | Hitachi Ltd | High pressure microwave plasma reactor |
JPH0448723A (en) * | 1990-06-15 | 1992-02-18 | Fuji Xerox Co Ltd | Manufacture of semiconductor device |
JPH05226260A (en) * | 1992-02-13 | 1993-09-03 | Matsushita Electric Ind Co Ltd | Method and apparatus for manufacturing photoelectric conversion device |
US6051483A (en) * | 1996-11-12 | 2000-04-18 | International Business Machines Corporation | Formation of ultra-shallow semiconductor junction using microwave annealing |
EP0903059A1 (en) * | 1996-05-31 | 1999-03-24 | IPEC Precision, Inc. | Apparatus for generating and deflecting a plasma jet |
-
2000
- 2000-10-23 AU AU41344/01A patent/AU4134401A/en not_active Abandoned
- 2000-10-23 EP EP00992125A patent/EP1234328A2/en not_active Withdrawn
- 2000-10-23 JP JP2001536925A patent/JP2003514377A/en active Pending
- 2000-10-23 WO PCT/US2000/041492 patent/WO2001035041A2/en not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122043A (en) * | 1990-12-06 | 1992-06-16 | Matthews M Dean | Electric pulsed power vacuum press |
US5336641A (en) * | 1992-03-17 | 1994-08-09 | Aktis Corporation | Rapid thermal annealing using thermally conductive overcoat |
US5913127A (en) * | 1995-06-29 | 1999-06-15 | Micron Technology, Inc. | Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS |
US5843239A (en) * | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US6165273A (en) * | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US6121061A (en) * | 1997-11-03 | 2000-09-19 | Asm America, Inc. | Method of processing wafers with low mass support |
Also Published As
Publication number | Publication date |
---|---|
JP2003514377A (en) | 2003-04-15 |
WO2001035041A9 (en) | 2002-08-08 |
WO2001035041A2 (en) | 2001-05-17 |
AU4134401A (en) | 2001-06-06 |
EP1234328A2 (en) | 2002-08-28 |
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