WO2000067891A2 - Reflective layer buried in silicon and method of fabrication - Google Patents
Reflective layer buried in silicon and method of fabrication Download PDFInfo
- Publication number
- WO2000067891A2 WO2000067891A2 PCT/US2000/012287 US0012287W WO0067891A2 WO 2000067891 A2 WO2000067891 A2 WO 2000067891A2 US 0012287 W US0012287 W US 0012287W WO 0067891 A2 WO0067891 A2 WO 0067891A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- layer
- buried
- dbr
- layers
- Prior art date
Links
- 239000010703 silicon Substances 0.000 title claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 115
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 235000012431 wafers Nutrition 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 238000005728 strengthening Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 1
- 230000023077 detection of light stimulus Effects 0.000 claims 1
- 239000007943 implant Substances 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the present invention has the goal of providing a buried reflector in a silicon wafer.
- the buried layer has particular advantage in providing a more cost effective and efficient photodetector assembly using silicon as the light detecting material.
- Silicon is advantageous because its micromechanical processing is well established and understood, and thus efficient.
- photodetectors of silicon it is normally desired to overcome the relatively low photon absorption of silicon through the use two reflecting surfaces separated by the silicon to provide a Fabry- Perot cavity and enhanced sensitivity and selectivity.
- the realization of such a cavity structure has been hampered by the fact that in conventional silicon processing, the cavity dimensions, which define selectivity and wavelength, have been hard to control.
- the present invention provides a reflective layer buried in silicon.
- the buried layer is provided as a Distributed Bragg Reflector (DBR) .
- DBR Distributed Bragg Reflector
- This reflective layer has particular advantage for use in a silicon based photodetector using resonant cavity enhancement of the silicon' s basic quantum efficiencies and selectivity using the buried, distributed Bragg reflector (DBR) formed in the silicon cavity.
- the DBR is created by bonding of two or more substrates together at a silicon oxide interface or oxide interface.
- an hydrogen implant is used to cleave silicon just above the bond line.
- the bonding is at the oxide layers.
- a conducting layer is implanted, an epitaxial layer is grown and then another conducting implant. Finally metalizations are applied to and through the surface and a window through the oxide provided for the admittance of light.
- the first bonding has one layer given an implant of a dopant to impart conductivity.
- Fig. 1 is a graph illustrating the performance enhancement of a photodetector using the present invention
- Fig. 2 is a diagram of a photodetector structure using a buried layer according to the invention
- Fig. 3 - 24 illustrate one method of forming the buried layer and its application to a photodetector according to the present invention
- Figs. 25 - 31 illustrate an alternative method of forming a buried layer
- Fig. 32 illustrates the invention used with on-chip electronics and optionally in an array of photodetectors .
- the present invention provides a distributed Bragg reflector (DBR) as a reflective layer in a silicon wafer.
- the reflective layer is shown in an application for use as a photodetector assembly.
- the reflective layer provides for an enhanced Fabry-Perot, resonant cavity response to incident light.
- the buried layer comprises alternating silicon and silicon dioxide layers which form the distributed Bragg reflector (DBR) .
- the invention provides a buried DBR reflector which in its application to a photodetector acts to improve the quantum efficiency of a silicon light detector relative to a detector without the buried reflector.
- Fig. 1 illustrates graphically the improvement in efficiency as a function of the buried reflectance for silicon of different Od (absorption coefficient, silicon depth product) values showing a great improvement over regular or conventional detectors without the buried layer.
- Fig. 2 illustrates the basic structure of the invention in a photodetector in which a silicon body 12 has a buried DBR layer 14 comprising alternating silicon dioxide 16 and silicon layers 18 spaced to provide a Fabry-Perot cavity in the silicon 12. To create a photodetector from the buried DBR 14 a top reflective surface is formed with the interface of the silicon 12 and the air environment.
- FIG. 3- A preferred method for the fabrication of the buried layer 14 of Fig. 2 is illustrated with respect to Figs. 3 - 13.
- the photodetector application is then illustrated in Figs. 11-24.
- a wafer of silicon 20 has an oxide layer 22 thereon.
- Dimensions are given in the figures for purposes of an example for a photodetector selected to respond selectively to light distributed around 850 nm (+/- nearly 100 nm) , but the invention is not limited to any particular wavelength.
- the silicon dioxide is 437 nm in depth.
- Hydrogen atoms are implanted through the oxide to form a thin layer 25 at an exemplary depth of 611 nm with a dosage of, for example only, 2X10 16 c ⁇ rf 2 to lX10 17 cm “2 and thus and thus are placed in the silicon below the oxide as shown in Fig. 4a.
- a second silicon body 26 is provided in Fig. 4b and the oxide layer 22 is thermally bonded onto the top of this layer 26.
- the thermal bonding typically at 600 degrees C, • cleaves the boundary between the hydrogen and no hydrogen containing silicon, leaving a 174 nm silicon layer 28 on top of the oxide 24 as shown in Fig. 5.
- Final bonding at 1000 degrees C is then performed.
- the top silicon layer 28 is mechanically polished to achieve the result of Fig. 6.
- Fig. 7 illustrates the provision of a further body of silicon 30 having an oxide layer 32 as shown in Fig. 3.
- Fig. 8A illustrates the addition of an hydrogen layer 34 as above which is then bonded to the layer of Fig. 6, reproduced as Fig. 8B to achieve the bonded and cleaved wafer of Fig. 9.
- a layering of hydrogenated silicon and oxide layers of 174 and 437 nm thickness is achieved. This can be repeated as many time as desired to achieve a multilayered DBR 35 shown in Fig. 10, but a DBR of two oxide layers (1.5 pairs of silicon and silicon dioxide) has been found to be an advantageous cost/performance compromise.
- the top layer 34 is typically mechanically polished in producing the final wafer of Fig. 10.
- the top silicon layer 34 is implanted or otherwise provided with a n+ arsenic doping to provide an n-type semiconductivity to it.
- an epitaxial layer 36 is grown, for example, to a depth of 4,826 nm, Fig. 12, and a top layer 38 is oxidized to a depth of 500nm, Fig. 13. Because of the silicon expansion upon oxidation, this leaves 5 ⁇ m of silicon.
- the invention thus shown has advantage in being able to produce uniform and accurate thickness of the burried layers insuring uniformity of performance of different units.
- the silicon body can also be manufactured as a single crystal layer as can the intervening silicon layers be made single crystal avoiding optical effects at crystal interfaces.
- the technique provided above also uses silicon fabrication techniques which are well established and understood.
- the invention also can create thicknesses of widelt varying relative thickness between the insulator and silicon layers. In particular it is desirable for optimal reflectivity to have them of the same optical path length as above. It is thus possible to achieve high efficiency reflectance with a minimum of layers as discussed elsewhere.
- a photodetector using the buried layer of the invention is now illustrated in Figs.14 - 24. Thereafter, and as shown in Fig. 14, the oxide layer 38 is apertured by any well known procedure to expose a surface region 40 of the detector for the admittance of light and a p+ region 42 of dopant created to complete the electrode structure.
- the oxide layer 38 is regrown across the entire detector, Fig. 16, and a small aperture 44 off to the side of the region 42 opened in it .
- a deep etch 46 is made to a level 48 just above the n+ layer 34, Fig. 18.
- An n+ dopant is implanted in the region 50 between the opening 46 and the n+ layer 34, as shown- in Fig. 20.
- an entire top layer 52 of oxide is grown or otherwise formed on the surface, Fig. 21, and then etched to open accesses 56 and 54 to the regions 50 and 42 respectively as shown in Fig. 22.
- Metalizations 60 and 58 are then deposited to provide connection from the regions 50 and 42 to the surface of the oxide layer 52, Fig. 23.
- a light admitting aperture 62 is etched in the oxide layer 52 in the area of region 42 creating an upper reflecting layer and completing the photodetector.
- a bias source 64 would be provided for operation in light detection, the current drawn thereby being an indication of incident light.
- Formation of the DBR layer may alternatively be as shown in Figs. 25 - 31.
- the process begins with first and second wafers as shown in Figs. 25 and 26. Each has a buried oxide layer, layers 70 and 72 respectively, which is a wafer form generally available in industry. On each, an oxide layer, layers 74 and 76, are formed, all with the exemplary dimensions given for 850 nm sensitivity and selectivity.
- An n+ dopant is implanted through the layer 76 into a region 80 at an exemplary density of 1X10 19 cm -3 of the underlying silicon region 78, Fig. 27.
- the surface oxide is then stripped, a new oxide grown as a wet H 2 0 process at 950 degrees C for typically ten minutes.
- Fig. 29 The layers 74 and 76 are then brought into contact, Fig. 28, and bonded while being heated to a bonding temperature, Fig. 29.
- the silicon is mechanically etched as by polishing to leave a thin silicon layer, Fig. 29, which is then removed along with the oxide layer 72 leaving a silicon layer 78 on top of a DBR structure, Fig. 30.
- a layer 84 of oxide is then created on the silicon layer 78, Fig. 31, and creation of a top layer electrode and metalization connection can proceed as before.
- Fig. 32 there is shown a silicon chip having a buried reflector device according to the invention used in a phtotdetector 92.
- On-chip electronices 94 are provided to process signals from and energize the photodetector 92 for the provision of an output signal reflecting incident light.
- An array of photodetectors 96 can also be provided in association with the electronics 94 to detect light in two dimensions.
- the individual photodetectors may have buried layers of different dimensions tailered to respond to different frequencies of light as well.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU60466/00A AU6046600A (en) | 1999-05-06 | 2000-05-05 | Reflective layer buried in silicon and method of fabrication |
EP00946759A EP1226612A4 (en) | 1999-05-06 | 2000-05-05 | Reflective layer buried in silicon and method of fabrication |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13285499P | 1999-05-06 | 1999-05-06 | |
US60/132,854 | 1999-05-06 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000067891A2 true WO2000067891A2 (en) | 2000-11-16 |
WO2000067891A9 WO2000067891A9 (en) | 2002-04-18 |
WO2000067891A3 WO2000067891A3 (en) | 2002-05-23 |
Family
ID=22455901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/012287 WO2000067891A2 (en) | 1999-05-06 | 2000-05-05 | Reflective layer buried in silicon and method of fabrication |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1226612A4 (en) |
AU (1) | AU6046600A (en) |
WO (1) | WO2000067891A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1705716A1 (en) * | 2005-03-24 | 2006-09-27 | ATMEL Germany GmbH | Semiconductor photodetector and method for making the same |
US7501303B2 (en) * | 2001-11-05 | 2009-03-10 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315128A (en) | 1993-04-30 | 1994-05-24 | At&T Bell Laboratories | Photodetector with a resonant cavity |
US5389797A (en) | 1993-02-24 | 1995-02-14 | The United States Of America As Represented By The Secretary Of The Department Of Energy | Photodetector with absorbing region having resonant periodic absorption between reflectors |
WO1996039719A1 (en) | 1995-06-05 | 1996-12-12 | The Secretary Of State For Defence | Reflecting semiconductor substrates |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
US5227648A (en) * | 1991-12-03 | 1993-07-13 | Woo Jong Chun | Resonance cavity photodiode array resolving wavelength and spectrum |
US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
US5877509A (en) * | 1997-11-14 | 1999-03-02 | Stanford University | Quantum well exciton-polariton light emitting diode |
-
2000
- 2000-05-05 AU AU60466/00A patent/AU6046600A/en not_active Abandoned
- 2000-05-05 EP EP00946759A patent/EP1226612A4/en not_active Withdrawn
- 2000-05-05 WO PCT/US2000/012287 patent/WO2000067891A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5389797A (en) | 1993-02-24 | 1995-02-14 | The United States Of America As Represented By The Secretary Of The Department Of Energy | Photodetector with absorbing region having resonant periodic absorption between reflectors |
US5315128A (en) | 1993-04-30 | 1994-05-24 | At&T Bell Laboratories | Photodetector with a resonant cavity |
WO1996039719A1 (en) | 1995-06-05 | 1996-12-12 | The Secretary Of State For Defence | Reflecting semiconductor substrates |
Non-Patent Citations (1)
Title |
---|
See also references of EP1226612A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7501303B2 (en) * | 2001-11-05 | 2009-03-10 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
EP1705716A1 (en) * | 2005-03-24 | 2006-09-27 | ATMEL Germany GmbH | Semiconductor photodetector and method for making the same |
Also Published As
Publication number | Publication date |
---|---|
WO2000067891A3 (en) | 2002-05-23 |
EP1226612A4 (en) | 2007-01-24 |
WO2000067891A9 (en) | 2002-04-18 |
EP1226612A2 (en) | 2002-07-31 |
AU6046600A (en) | 2000-11-21 |
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